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TW201144933A - Radiation-sensitive resin composition and resist pattern formation method - Google Patents

Radiation-sensitive resin composition and resist pattern formation method

Info

Publication number
TW201144933A
TW201144933A TW100109134A TW100109134A TW201144933A TW 201144933 A TW201144933 A TW 201144933A TW 100109134 A TW100109134 A TW 100109134A TW 100109134 A TW100109134 A TW 100109134A TW 201144933 A TW201144933 A TW 201144933A
Authority
TW
Taiwan
Prior art keywords
parts
mass
radiation
polymer
resin composition
Prior art date
Application number
TW100109134A
Other languages
Chinese (zh)
Inventor
Mitsuo Satou
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201144933A publication Critical patent/TW201144933A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Disclosed is a radiation-sensitive resin composition comprising a polymer (A) that will serve as a base resin, a radiation-sensitive acid generator (B), a polymer (C) comprising fluorine atoms, and a low molecular weight compound (D) with a relative permittivity in the range of 30 to 200 and a boiling point of at least 100 DEG C at 1 atm, wherein the content of the aforementioned low molecular weight compound (D) is in the range of 10 parts by mass to 500 parts by mass per 100 parts by mass of the aforementioned polymer (A). A cyclic carbonate compound or a nitrile compound is preferably included as the aforementioned low molecular weight compound (D). The content of the aforementioned polymer (C) is preferably in the range of 0.1 parts by mass to 5 parts by mass per 100 parts by mass of the aforementioned polymer (A).
TW100109134A 2010-03-17 2011-03-17 Radiation-sensitive resin composition and resist pattern formation method TW201144933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010061699 2010-03-17

Publications (1)

Publication Number Publication Date
TW201144933A true TW201144933A (en) 2011-12-16

Family

ID=44649300

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100109134A TW201144933A (en) 2010-03-17 2011-03-17 Radiation-sensitive resin composition and resist pattern formation method

Country Status (3)

Country Link
JP (2) JP5761175B2 (en)
TW (1) TW201144933A (en)
WO (1) WO2011115217A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6123385B2 (en) * 2012-04-04 2017-05-10 住友化学株式会社 Compound, resin, resist composition, and method for producing resist pattern
JP7509068B2 (en) * 2020-04-28 2024-07-02 信越化学工業株式会社 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist material, and pattern forming method

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002303981A (en) * 2001-04-06 2002-10-18 Fuji Photo Film Co Ltd Positive type photoresist composition
JP4222850B2 (en) * 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 Radiation-sensitive resin composition, method for producing the same, and method for producing a semiconductor device using the same
JP4114064B2 (en) * 2003-05-27 2008-07-09 信越化学工業株式会社 Silicon-containing polymer compound, resist material, and pattern forming method
JP4399209B2 (en) * 2003-08-25 2010-01-13 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4013063B2 (en) * 2003-08-26 2007-11-28 信越化学工業株式会社 Resist material and pattern forming method
JP4365236B2 (en) * 2004-02-20 2009-11-18 富士フイルム株式会社 Resist composition for immersion exposure and pattern forming method using the same
JP4816921B2 (en) * 2005-04-06 2011-11-16 信越化学工業株式会社 Novel sulfonate and derivative thereof, photoacid generator, resist material and pattern forming method using the same
JP4905666B2 (en) * 2005-10-31 2012-03-28 信越化学工業株式会社 Novel sulfonate and derivative thereof, photoacid generator, resist material and pattern forming method using the same
JP5481768B2 (en) * 2006-09-08 2014-04-23 Ｊｓｒ株式会社 Radiation sensitive resin composition and resist pattern forming method using the same
JP4839253B2 (en) * 2007-03-28 2011-12-21 富士フイルム株式会社 Positive resist composition and pattern forming method
JP5175579B2 (en) * 2008-02-25 2013-04-03 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP2009271253A (en) * 2008-05-02 2009-11-19 Fujifilm Corp Liquid immersion exposure resist composition and patterning method using the same
JP5530651B2 (en) * 2008-07-14 2014-06-25 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, and pattern formation method using the composition
JP5277128B2 (en) * 2008-09-26 2013-08-28 富士フイルム株式会社 Positive resist composition for immersion exposure and pattern forming method
JP5314990B2 (en) * 2008-10-07 2013-10-16 東京応化工業株式会社 Resist composition for immersion exposure and method for forming resist pattern
JP5401086B2 (en) * 2008-10-07 2014-01-29 東京応化工業株式会社 Resist composition for immersion exposure, resist pattern forming method, and fluorine-containing resin
JP5639747B2 (en) * 2009-05-25 2014-12-10 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method
JP5629440B2 (en) * 2009-08-31 2014-11-19 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same

Also Published As

Publication number Publication date
JP5761175B2 (en) 2015-08-12
WO2011115217A1 (en) 2011-09-22
JPWO2011115217A1 (en) 2013-07-04
JP2015111294A (en) 2015-06-18

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