TW201133912A - Fabricating method of thin film solar cell - Google Patents

Abstract

A fabricating method of a thin film solar cell is provided. First, a transparent substrate is provided. Next, a first transparent conductive layer is formed on the transparent substrate. Then, a photovoltaic layer is formed on the first transparent conductive layer. Next, a second transparent conductive layer is formed on the photovoltaic layer. Then, a light-reflecting structure having a texture structure is formed on the second transparent conductive layer.

Description

^04twf.doc/n 201133912 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for fabricating a solar cell, and more particularly to photoelectric conversion of a film-forming solar cell The system of efficiency [previous technology] Therefore, the source of f is lacking, people's awareness of the importance of environmental protection is improved, and the influence of alternative energy and renewable energy sources and the dependence of petrochemicals on the petrochemical energy source. In many alternatives can be noticed. The main reason is that the sun h "battery (solarceI1) is the most energy-efficient, iff two too%. This battery can directly convert solar energy into electricity: 2 electricity will not produce secondary quality, will not cause pollution to the environment. 2 fly emulsion search Hazardous In general, the conventional thin scorpion t-sequence is fully stacked with an electrode layer, and the photoelectric is usually irradiated on the substrate on the outer side of the sun, the a-pole layer. When the light is generated by the free two-cell, the photoelectric conversion layer is suitable. In the case of receiving light energy, the electrons and the holes will be separated into two layers by the internal (four) state. At this time, if a load circuit is added: the circuit or device of the sub-type electric energy is driven, the electric energy can be supplied. :Now:=::=:2 The efficiency of the conversion is about the same as the photoelectric conversion effect of the battery of the solar cell. 201133912 —-—^ •«'wf.doc/n Yang [Invention] This is a thin film solar cell. The light-reflecting structure having the concave-convex structure is on the film layer, and it can be mentioned that the utilization rate in the solar cell of the bound film is increased, so that the film is too:=the beam can be improved in electrical conversion efficiency. The invention proposes a thin film solar cell The manufacturing method is as follows: a transparent substrate is formed. Then, a light-transmissive conductive layer is formed on the transparent substrate, and then a photovoltaic layer is formed on the first transparent conductive layer, thereby forming a second transparent conductive layer on the photovoltaic layer. Then, a light reflecting structure having a concave-convex structure is formed on the second optical layer. In an embodiment of the invention, the method for forming the light reflecting structure comprises an imprinting process. In an embodiment of the invention, the embossing process comprises forming a reflective material layer on the second light-transmissive conductive layer. Then, a mold having a concave-convex pattern is imprinted on the reflective material layer to form the concave and convex portions. The light-reflecting structure of the structure. In an embodiment of the invention, the embossing process comprises: forming a light-transmissive material layer on the first light-transmissive conductive layer. Then, stamping the mold having the concave-convex pattern The light transmissive material layer is formed on the surface of the light transmissive material layer to form a concave-convex structure, and then a reflective material layer is formed on the light transmissive material layer. 201133912 ~^^^〇4twf.doc/n In one embodiment of the present invention example_ The upper light transmissive material layer is conformal to the present invention, and the above-mentioned -th sub-pattern structure is included on the first electrical layer: grinding-worker Yan Anchong. The first in the present invention is collapsed into a disproportionate structure.

The shape of the J reflection structure including straight strips, strips, 22s, and 柊S is in the shape of the Sike. ^ The side lattice shape, the diamond shape, the bee writing shape or the Mafa package surface +, the upper red axis of the framing structure is implemented. The above-mentioned mesh process includes: configuration of the round slaughter and some - the mold is in the second On the photoconductive layer, the mesh is exposed to the opening of the second light-transmissive conductive layer. Next, forming a first r=r layer is filled with a light of the structure, and then removing the mold to form a recessed mold, a show=invention. In the embodiment, the mesh process includes: A layer of light transmissive material is formed over the crucible layer. Next, a mold having θ/, is screen printed on the light-transmitting material layer to form a structure having a mesh pattern on the surface of the light-transmitting material layer. Money, remove the mold. Then, a reflective material layer is formed on the light transmissive material layer. In an embodiment, the mesh process includes: arranging a first mold having a first mesh pattern on the second light-transmissive conductive layer, 201133912 3^jv; Hiwf.doc/n wherein the first mesh pattern There are a plurality of exposed second through openings. Next, the -first sub-pattern structure is formed in the first mode = the first sub-substrate, and the structure is connected to a portion of the second light-transmissive conductive layer. Then, 酉^ has: a second mesh pattern--the second mold is in the first sub-pattern knot=the second mesh pattern has a plurality of second openings, and the second second morning==open two•form-second child Pattern structure ^ Sike shape. The bee-like bee or the horse is selected from the group consisting of m: in the above, the material of the above-mentioned light-reflecting structure is composed of the substance 、ί, = a metal oxide, and - the organic material is selected from the substance group or a plurality of substances.鍅, 铌, 锢, ', 钌, 2,: nickel, copper, zinc, gallium, bismuth, Ji, this, New Zealand, crane,:,:,:,,,,,,,,,,,,,,,,,, And the ethnic group formed by the gold. White, gold, Ming, wrong and its indium, ::=: Implementation: 1, the above metal oxides include oxidative oxidation, chemical, oxidized, oxidized, cadmium stannate (Cd s Ω x oxidation Aluminum, yttria, indium tin oxide, or fluorine-doped ':Asian 4 tin: copper cadmium stannate, stannous oxide —^4twf.d〇c/n 201133912=Invention - Implementation, above The organic (4) includes _ (dye) or 疋 pigment. In the embodiment of the invention, the transparent substrate has one side, and the light beam is adapted to enter the thin film solar cell via the light incident surface, a light-transmissive conductive layer, a photovoltaic layer, and at least a near-red embodiment between nanometers and nanometers, wherein the above part is followed by red light, and the light-emitting method of the thin film solar cell described above is used. The substrate and the light-transmissive base; the in-frame structure is to be-backed to the second film too, and the energy-making method is to add a light beam to the light-reflecting structure of the film sun "j concave-convex structure to increase the light beam through the photovoltaic Sound ^ light: the opportunity to break the reflection. So - come, the opportunity to receive, and the production of more than two electricity = increase ^ bundle The production method of the vacant layer-absorbing thin film solar cell is sub-electric, and the light beam of the solar cell of the invention is improved, and the photoelectric conversion efficiency of the manufactured thin film battery can be effectively improved.帛 太阳能 太阳能 太阳能 《 下文 下文 下文 下文 下文 下文 下文 下文 下文 w w w w w w w w w w w 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 339 1C is a schematic cross-sectional view of a light reflecting structure having a concave-convex structure according to another embodiment. Referring to FIG. 1A, firstly, a transparent substrate u is provided, wherein the transparent substrate 11 has a light incident surface 112 and is transparent. The substrate 11 is, for example, a glass substrate. Then, a first light-transmissive conductive layer 12, a photovoltaic layer 130, and a light-transmissive conductive layer 140 are sequentially formed on the back surface 112 of the transparent substrate 11 In the present embodiment, the first transparent conductive layer 12 is formed on the transparent substrate 110. The material of the first transparent conductive layer 120 is made of indium tin oxide. IT0), steel oxygen Indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide, aluminum tin oxide (ΑΤΟ), aluminum zinc oxide (aluminum zinc) Oxide, AZO), cadmium indium oxide (CIO), cadmium zinc oxide (CZO), gallium zinc oxide (GZO), and tin oxyfluoride (FTO) Material 'or a combination of the above. Further, the first light-transmitting conductive layer 12A may be formed by using a sputtering method, a metal organic chemical vapor deposition (MOCVD) method, or an evaporation method. Please continue to refer to the figure, the photovoltaic layer 130 is formed on the first light-transmissive conductive layer 120, wherein the photovoltaic layer 130 can be a group IV film, a ΙΠ ν family compound semiconductor film, a II-VI compound semiconductor film or a 201133912 ... A...u4twf.doc/n organic compound semiconductor film. In detail, the 'IV group thin film includes, for example, a_si, HC_Si, a-SiGe, μο-SiGe, a-SiC, μο-SiC, a tandem type IV film (eg, a stacked tantalum film) or three. At least one of a group IV film (eg, a three-layer film). The III-V compound semiconductor thin film contains, for example, gallium arsenide (GaAs), indium gallium telluride (LiGaP), or a combination thereof. The ii-vi compound semiconductor thin film includes, for example, copper indium bismuth (CIS), copper indium gallium bismuth (CIGS), braided hoof (CdTe), or a combination thereof. The organic compound semiconductor thin film contains, for example, a mixture of p〇ly (3-hexylthiophene, P3HT) and a nanocarbon sphere (pCbm). In this embodiment, the method of forming the photovoltaic layer 130 is, for example, radio frequency plasma assisted chemical vapor deposition (Radio Frequency Plasma).

Enhanced Chemical Vapor Deposition (RF PECVD), Ultra High Frequency Plasma Assisted Chemical Vapor Deposition (Very High Frequency Plasma)

Enhanced Chemical Vapor Deposition, VHF PECVD) or • ί政波气聚辅助Chemical gas phase;

Enhanced Chemical Vapor Deposition, MW PECVD) After forming the photovoltaic layer 130, a second light-transmissive conductive layer 14 is formed on the photovoltaic layer 130, as shown in FIG. 1A. In this embodiment, the manner of forming the second transparent conductive layer 140 is the same as the manner of forming the first transparent conductive layer 120. That is, the method of forming the second transparent conductive layer 14 can also use the above sputtering method. , metal organic chemical vapor deposition method, or vapor deposition method, and the material thereof is, for example, the material of the first light-transmitting conductive layer 12 前述, here 201133912 -------Avf.doc/n no longer Narration. Next, please refer to FIG. ΙΑ, a reflective material layer 162 is formed on the second transparent conductive layer 140, wherein the reflective material layer 162 completely covers the second transparent conductive layer 140. Next, a embossed pattern ρ is provided above the reflective material layer 162. Then, the mold M1 having the uneven pattern 压 is imprinted on the reflective material layer 162 by mechanical force embossing as shown in Fig. 1B. Next, the cured reflective material layer 162a' can form a light reflecting structure 150 having a textured structure p. That is, after the mold M1 is stamped and cured, the reflective material layer 162a having the uneven structure P is a light reflecting structure. Of course, in other embodiments, referring to FIG. 1C, the mold having the concave-convex pattern p is stamped on the reflective material layer 162, and another light-reflecting structure exposing a portion of the second transparent conductive layer 140 may be formed. I5〇a. That is, after the mold M1' is cured and imprinted, the reflective material layer i62b having the concave-convex structure p and exposing part of the first light-transmitting conductive layer 140 is another light-reflecting structure 150a. As can be seen from the above, this embodiment can form a light-reflecting structure 150, 150a through a embossing process, wherein the force exerted by the mechanical force embossing can also determine the type of the light-reflecting structure 150, 150a. Further, the material of the light reflecting structure 150 may be one or more selected from the group consisting of white paint, a metal, a metal oxide, and an organic material. Wherein the metal is selected from the group consisting of aluminum, bismuth, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, antimony, bismuth, lead, antimony, molybdenum, chromium, bismuth, antimony, palladium, silver, Cadmium, indium, tin, antimony, bismuth, antimony, antimony, dendritic, tungsten, antimony, bismuth, epitaxy, platinum, gold, sharp, wrong, and alloys thereof 10 201133912 j^.j〇4twf.doc/n The metal oxide of the group may be selected from indium oxide, tin oxide (1) n 〇 Xlde), > oxygen dicing, magnesium fluoride, oxidation group, titanium oxide, magnesium oxide, oxidized rock nitride, oxidized, oxidized, indium tin oxide. , stannic acid mine (Cd2

Sn〇4), steel-doped cadmium stannate, stannic oxide or fluorine-doped stannous oxide and the organic material may be a dye or a pigment. In particular, when the material of the light-reflecting structure 15A is metal, the first light-transmitting conductive layer 14A and the light-reflecting structure 15A may be further disposed with a light-transmitting insulating layer. After the step of FIG. 1B is completed, the mold M1 is removed, and an adhesive layer no is covered on the light reflecting structure 150 to package the back transparent substrate 18 and the substrate 110, as shown in FIG. 1D. In the present embodiment, the material of the adhesive layer 170 is, for example, an adhesive such as ethylene vinyl acetate (eva), polyvinyl alcohol (ΊνΒ), smoky (PQly 〇), or silk vinegar (4). The back transparent substrate 18 is, for example, a glass substrate. The manner in which the transparent substrate i1G and the back light transmissive plate (10) are sealed by using the adhesive layer 170 is a technique and a step well known to those skilled in the art, and is not described herein. So far, the fabrication of a thin film solar cell 1 has been substantially completed. As shown in FIG. 1D, since the thin film solar cell 1& of the present embodiment has the light reflecting structure 150', when the light beam li enters the thin film solar cell 1A via the light incident surface 112 of the transparent substrate 11 The light beam u passes through the transparent substrate 110, the first light-transmissive conductive layer 12, and the photovoltaic layer 13 , and a portion of the light beam L1 that is not absorbed by the photovoltaic layer 130 is transferred to the second transparent conductive layer 140 to Reflective material layer 162a. At this time, the light beam u 201138312 aj/3u^rwf.doc/n is easily reflected by the uneven structure P of the reflective material layer 162a and scatters the reflected light beam L2, thereby improving the light path of the light beam L2 passing through the photovoltaic layer 丨3〇. In turn, the opportunity for the light beam L2 to be absorbed by the photovoltaic layer 130 is increased, so that the overall photoelectric conversion efficiency can be improved. The wavelength range of the light beam L2 reflected and scattered by the concave-convex structure 实质上 is substantially between 6 〇〇 nanometer and 11 〇〇 nanometer, and the light beam L2 is, for example, red light, near-infrared light and far-infrared light. Alternatively, the reflective material layer 162a having the uneven structure P can affect the direction of the light beam L1, so that the light beam L1 is reflected and scattered at the interface between the reflective material layer 162a and the second light-transmitting conductive layer 140. Therefore, the 'reflective material layer 162a can increase the chance that the light beam L1 is reflected in the thin film solar cell 10' to enhance the light path of the light beam L1 through the photovoltaic layer 13〇, thereby increasing the chance that the light beam L1 is absorbed by the photovoltaic layer 13〇. In the case of 5, the thin film solar cell l〇〇a can effectively absorb the light beam Li and convert it into electric energy, thereby generating high photoelectric conversion efficiency. Hereinafter, a method of manufacturing the thin film solar cells 1 〇〇 b to 100 g will be described in a plurality of different embodiments. It is to be noted that the following embodiments use the same reference numerals and parts of the above-mentioned embodiments, and the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. The description of the omitted portions can be referred to the foregoing embodiment, and the following embodiments will not be repeated. 2A to 2D are schematic cross-sectional views showing a manufacturing process of a thin film solar cell according to another embodiment of the present invention. The manner in which the thin film solar cell i〇〇b is formed is similar to the manner in which the thin film solar cell 10a is formed, but the differences between the two can be referred to the following description. 12 U4twf.d〇〇/n 201133912 Referring to FIG. 2A, after the second transparent conductive layer 140 is formed on the photovoltaic layer 130, a transparent material layer 164 is formed on the second transparent conductive layer 14A. Next, referring to Fig. 2B, the mold M1 having the uneven pattern P is stamped on the light-transmitting material layer 164, and then the light-transmitting material layer 164a is cured, and the surface of the light-transmitting material layer 164a is formed with the uneven structure P. Next, please refer to FIG. 2C 'Removal Mold>, and a reflective material layer ι66 is formed on the light transmissive material layer 164a, wherein the reflective material layer 166 is conformed on the light transmissive material layer 164a. At this time, the conformal reflective material layer ι66 and the light transmissive material layer 164a can be regarded as a light reflecting structure 15〇b. Then, referring to FIG. 2D, a thin film solar cell 100b can be fabricated by encapsulating the adhesive layer 170 on the light reflecting structure 150b to package the back transparent substrate 180 and the transparent substrate 11A. In the present embodiment, 'the stacked structure of the light-transmissive material layer 164a and the conformal reflective material layer 166 thereon can be regarded as the light-reflecting structure 15〇b, so when the light beam L1 is transmitted to the light-reflecting structure 丨50b, the light-transmitting material layer The concave-convex structure P on the surface of the 164a can also affect the direction of the light beam L1, so that the light beam L1 is reflected and ejected at the interface between the light-transmitting material layer 164a and the second light-transmitting conductive layer 14A. At the same time, part of the light beam L1 that is not reflected and scattered by the uneven structure p will pass through the light transmissive material layer 164a, and be reflected by the reflective material layer 166 as the light beam L3, so that the light paths of the light beams L2 and L3 passing through the photovoltaic layer 13 will change. Long, and the opportunity for the light beam L2, u to be absorbed by the photovoltaic layer 13〇 can be increased, thereby improving the overall photoelectric conversion efficiency. In other words, the thin film solar cell 100b can effectively absorb the light beam li and convert it into electric energy, which can produce high photoelectric conversion efficiency. 13 201133912 v i «Avf.doc/n FIG. 3A to FIG. 3C are schematic cross-sectional views showing a manufacturing process of a thin film solar cell according to another embodiment of the present invention. The manner in which the thin film solar cell 100c is formed is similar to the manner in which the thin film solar cell 100a is formed, but the differences between the two can be referred to the following description. Referring to FIG. 3A′, after forming the second transparent conductive layer 140 on the photovoltaic layer 130, a first sub-pattern structure 154 is embossed on the second transparent conductive layer 140, wherein the first sub-pattern structure 154 is exposed. Two light-transmissive conductive layers 140. Next, a second sub-pattern structure 156 is embossed on the first sub-pattern structure 154, wherein the second sub-pattern structure 156 and the first sub-pattern structure 154 at least partially overlap to form a light reflecting structure 15〇c, as shown in the figure. 3B is shown. Then, the cover adhesive layer 17 is disposed on the light reflecting structure 15〇c to package the back transparent substrate 180 and the transparent substrate 110, and the thin film solar cell 1cc as shown in FIG. 3C can be completed. Production. It is to be noted that, in this embodiment, the shape of the light reflecting structure 15〇c is, for example, a lattice shape formed by the vertical phase of the first sub-pattern structure 154 and the second sub-pattern structure 156, as shown in FIG. 4A. Or a diamond shape formed by the first sub-pattern structure 154 and the second sub-pattern structure u 6 intersecting at an angle as shown in FIG. 4B; or by the first sub-pattern structure 154 and the second sub- The pattern structure 156 is arranged in parallel and partially overlapped to form a straight strip (see phase 4C), a strip or a strip (not drawn or stripe (not shown); or The pattern structure 154 and the mosaic pattern of the second sub-pattern structure 1S6 or the non-stick arrangement form a mosaic shape (please refer to FIG. 4D) or a honeycomb shape (not shown). In other words, the first sub-pattern is 154 Row with the second sub-pattern structure 156 14 04twf.doc/n 201133912

The column mode and structure can be adjusted according to the needs of the user. The above is only for illustrative purposes, and is not limited thereto. ‘牛J

Since the present embodiment can transmit the banknotes of the first sub-pattern structure 154 and the second sub-structure 156, the I beam L1 is in the light-reflecting structure 15〇c and the second light-transmitting conductive layer. The phenomenon of reflection and scattering occurs at the interface of 14 而 to form the light beam L2. Therefore, the light reflecting structure 150c can increase the light path of the light beam L1 reflected in the thin film solar cell 1 而 and enhance the light path of the light beam L2 through the photovoltaic layer 13 , thereby increasing the chance that the light beam L2 is absorbed by the photovoltaic layer 130. Thus, the thin film solar cell 100c can effectively absorb the light beam U and convert it into electric energy, thereby generating high photoelectric conversion efficiency. 5A-5B are schematic cross-sectional views showing a manufacturing process of a thin film solar cell according to another embodiment of the present invention. The manner of forming the thin film solar cell i〇〇d is similar to that of forming the thin film solar cell 100c, but the differences between the two can be referred to the following description. Referring to FIG. 5A, before the first sub-pattern structure 154a is embossed on the second light-transmissive conductive layer 140, a concave-convex structure ρι is formed on the first sub-pattern structure 154a', wherein the concave-convex structure pi is located in the first sub-pattern structure j"a A first surface of the second light-transmissive conductive layer 140 is covered. The first sub-pattern structure 154a covers the second transparent conductive layer 14A. Then, referring to FIG. 5B, the second is sequentially printed. The sub-pattern structure 156a is on the first sub-pattern structure 154a and covers the adhesive layer 170 on the second sub-pattern structure 156a to package the back transparent substrate 180 and the transparent substrate 110 to complete the thin film solar cell. The second sub-pattern structure 156a 15 201133912 〜^wriwf.doc/n covers the first sub-pattern structure 154a, and the stack structure of the first sub-pattern structure 154a and the second sub-pattern structure 156a can be regarded as A light-reflecting structure 150d. In the present embodiment, the surface of the first sub-pattern structure 154a that is in contact with the second light-transmissive conductive layer 140 is a concave-convex structure pi, wherein the uneven structure pl is formed, for example, on the surface of the first sub-pattern structure 154a. on The surface microstructure is of course. In other embodiments not shown, the uneven structure pl may also be a surface microstructure formed on the surface of the second light-transmissive conductive layer 140. Further, in an embodiment not shown, The surface of the second sub-pattern structure contacting the first sub-pattern structure may also be a concave-convex structure, and the concave-convex structure may be a surface microstructure formed on the first sub-pattern structure or the second sub-pattern structure, which is not Since the first sub-pattern structure 154a and the second transparent conductive layer 140 are in contact with each other, the surface is a concave-convex structure P1. Therefore, when the light beam is transmitted to the concave-convex structure P1, the light beam L1 is easily reflected by the concave-convex structure P1. And scattering and reflecting the light beam L2' so that the light path of the photovoltaic layer 13 [the optical path of the light source 2 becomes longer" can enhance the chance that the light beam L2 is absorbed by the photovoltaic layer 130, thereby improving the overall photoelectric conversion efficiency. The light beam L2 having a wavelength of light ranging from 600 nm to 11 nm in L1 can be directly reflected by the light reflecting structure 15 〇d to the photovoltaic layer 130. In other words, the first sub-pattern structure 154a and the second sub-pattern The structure 156a may affect the traveling direction of the light beam L1 to cause reflection and scattering reflection of the light beam L1 on the surface of the first sub-pattern structure 154a and the second light-transmissive conductive layer 140, or to pass through the second sub-pattern structure 156a. The reflection phenomenon is generated. In this way, the light beam L1 is reflected in the thin film solar cell 100d to increase the light path of the light beam L1 through the photovoltaic layer 130, thereby increasing: L1 is absorbed by the photovoltaic layer 130, and more electrons are generated. Therefore, the thin film solar cell 1_ can effectively increase the light beam L1 and further improve its photoelectric conversion efficiency. It is worthwhile to mention that, in the embodiment not shown, the light reflecting structure may also be composed of a plurality of first composite materials and a plurality of second polymeric materials.

For arranging the formed polymer layer, the towel-polymer (4) is, for example, a sonicated acetic acid-polyethylene terephthalate or a copolymer of a peracetic acid-containing polyethylene terephthalate. The dipolymer material is, for example, a copolymer of polyextracted bismuth diacetate or polynaphthalene m. The above materials are only for the light reflection structure 15Gd of the device (4). The material of the light reflection structure 15Gd can reflect at least the wavelength of the wavelength between _ nanometer and 丨(10) nanometer, which is the range to be protected by the present invention. The palpitations, 6Α to 6D are schematic cross-sectional views showing a manufacturing process of a thin film too %% cell according to another embodiment of the present invention. The manner in which the thin film solar cell is formed is similar to the manner in which the thin film solar cell is formed. The only difference is the following description. Referring to FIG. 6A ' after forming the second light-transmissive conductive layer 14 ,, the mold milk having the - mesh pattern 200 is disposed on the second light-transmissive conductive layer 14 , wherein the mesh pattern 2GG has a plurality of exposed second The light-transmissive conductive layer 14〇=port 202. Next, please refer to the figure 纽 to form a _reflective material layer 162. The second reflective layer 162c is filled in the opening 202 to be connected to the transparent conductive layer MG. Then, referring to Fig. 6C, the mold 17 201133912 - a .v\vf.doc / n M2' is removed to form a light reflecting structure 15〇e having the uneven structure P2. Then, referring to FIG. 6D, a thin film solar cell 100e is fabricated by encapsulating the moon light-transmissive substrate 180 and the light-transmitting substrate 11A on the cover layer no. In short, in this embodiment, the light reflecting structure 150e' is formed by a mesh process, wherein the reflective material layer i62c can be randomly filled in the opening 202 through the mesh pattern 2, and on the second transparent conductive layer mo. A light reflecting structure l5〇e having the uneven structure P2 is formed. Since the light reflecting structure 丨5〇e has the concave-convex structure P2', the opportunity for the light beam L1 to be reflected and scattered in the thin film solar cell 1〇〇e can be increased to increase the light path of the light beam L2 through the photovoltaic layer 13〇, thereby increasing The opportunity for beam L2 to be absorbed by photovoltaic layer 130 produces more pairs of electron holes. In this way, the thin film solar cell 100e can effectively improve the utilization rate of the light beam L1, thereby improving its photoelectric conversion efficiency. 7A to 7D are schematic cross-sectional views showing a manufacturing process of a thin film solar cell according to another embodiment of the present invention. The manner in which the thin film solar cell 100f is formed is similar to the manner in which the thin film solar cell 100e is formed, but the differences between the two can be referred to the following description. Referring to FIG. 7A', after the second transparent conductive layer 14 is formed, a light transmissive material layer 164 is formed on the second transparent conductive layer 140. Next, referring to Fig. 7B, the mold m2 having the mesh pattern 200 is screen printed on the light transmissive material layer 164. Then, referring to FIG. 7C, after the light-transmitting material layer 164b is cured, the mold M2 is removed, and the surface of the light-transmitting material layer 164b is formed with the structure of the mesh pattern 200. Thereafter, referring to FIG. 7D, a reflective material 18 / 04 twf.doc / n 201133912 layer 166 is formed on the light transmissive material layer 164b, wherein the reflective material layer 166 covers the transparent material layer 164b and a portion of the second light transmissive material over the entire surface. Layer 14〇. Here, the stacked structure of the light transmissive material layer 164b and the reflective material layer 166 can be regarded as a light reflecting structure 150f. Then, referring to FIG. 7D, the cover adhesive layer 17 is disposed on the light reflecting structure 150f to package the back transparent substrate 18A and the transparent substrate 110 to complete the fabrication of the thin film solar cell 10 sink. 8A-8E are schematic cross-sectional views showing a fabrication process of a thin film solar cell according to another embodiment of the present invention. The manner of forming a thin film solar cell is similar to that of forming a thin film solar cell 100e, but the difference between the two is different. Please refer to the following instructions. Referring to FIG. 8A, after forming the second light-transmissive conductive layer 14A, a first mold M3 having a first mesh pattern 21A is disposed on the second light-transmitting guide=140, wherein the first mesh pattern 21 〇 Have multiple exposed second? Electrical layer 14. The first - open σ 212. Next, referring to FIG. 8β, the disciple pattern structure 154b is on the first mold m3, and the first structure (10) of the beans is connected to a portion of the second light-transmissive conductive layer 14〇. Next, after M3 and 8=the first sub-pattern structure (10), the second mold M4 with a second mesh pattern 220 is removed, and the second mold M4 is on the flute-pa pattern structure 154b. The mesh pattern 220 has a plurality of ports 212 and two melons, and the second opening 222 exposes at least a portion of the first opening 4, , and 'after, please refer to FIG. 8D to form a second sub-pattern structure 156b structure 154b, wherein The second sub-pattern structure (4) at least partially overlaps with the case structure l54b to constitute a light reflection junction g. Then, referring to FIG. 8E, the cover adhesive layer 17 is placed on the light-reflecting layer 19g, and the back light-transmitting wire (10) and the light-transmitting button are packaged to complete the thin film solar cell. Production. However, the various processes described above are for illustrative purposes only, and some of them are currently common techniques. Ben Lai

m slightly or increase the possible steps to comply with the process J

Saa 5 details. In addition, in other embodiments that are not green, the present invention can refer to the description of the above embodiments, and according to the actual needs, the members are selected to achieve the desired technical effects. The whistle-'this hair-shaped thin-yang solar cell is formed by forming a light-reflecting structure having a concave-convex structure on the electric layer to increase the chance that the solar cell towel is reflected. In this way, the second light can pass through the light path of the undulating layer to increase the beam by the photovoltaic layer ==, resulting in more pairs of electron holes. In other words, the == manufacturing method of the present invention can effectively increase the film density of the manufactured film, the wire and the reference rate, thereby improving the photoelectric conversion efficiency of the manufactured thin film solar cell. ^, , , ^明 has been exposed as above in the example, but it is not used to limit the invention of the protection _ when the 'to; = = this [simplified description of the diagram] can be, 1 system 1D is the invention - A cross-sectional view of a production process of a thin film solar moon pack pool of an embodiment. 20 201133912 ^〇4tw£doc/n FIG. 2A to FIG. 2D are schematic cross-sectional views showing a manufacturing process of a solar cell according to another embodiment of the present invention. 3A to Ffi3C are cross-sectional views showing a manufacturing process of a thin film solar cell according to another embodiment of the present invention. 4A through 4D are schematic views of light reflections of various different embodiments. Boat magic

5A to 5B are cross-sectional views showing a manufacturing process of a thin film energy battery according to another embodiment of the present invention. FIG. 6A to FIG. 6D are schematic cross-sectional views showing a manufacturing process of a solar cell according to another embodiment of the present invention. 7A to 7D are cross-sectional views showing a manufacturing process of a solar cell according to another embodiment of the present invention. A diagram of a cross section of a battery manufacturing process according to another embodiment of the present invention is shown in the drawings. Double risk [Main component symbol description] 112 114 120 130 140 150 100a~100g: Thin film solar cell 110: light-transmitting substrate light-in surface, other surface, first light-transmitting conductive layer, photovoltaic layer, second light-transmitting conductive layer 150a~150g Light reflecting structure 21 201133912 wf.doc/n 154, 154a, 154b: first sub-pattern structure 156a, 156b: second sub-pattern structure 162, 162a, 162b, 162c: reflective material layer 164, 164a, 164b: light transmission Material layer 166: reflective material layer 170: adhesive layer 180: t transparent substrate 200: mesh pattern 202: open π® 210: first mesh pattern 212: first opening 220: second mesh pattern 222: second Opening ΜΙ, ΜΓ, M2, M3: Mold P, P', P Bu P2: Concave structure LI, L2, L3: Beam • 22

Claims (1)

.u4twf.doc/n 201133912 VII. Patent application scope: 1. A method for manufacturing a thin film solar cell, comprising: providing a transparent substrate; forming a first light-transmissive conductive layer on the transparent substrate; forming a The photovoltaic layer is on the first light-transmissive conductive layer; a second light-transmissive conductive layer is formed on the photovoltaic layer; and a reflective structure having a convex structure is formed on the second light-transmissive conductive layer. 2. The method of fabricating a thin film solar cell according to the above-mentioned patent scope, wherein the method of forming the light-reflecting structure comprises an imprint process. 3. The method of fabricating a thin film solar cell according to claim 2, wherein the embossing process comprises: forming a reflective material layer on a transparent conductive layer of 5 Å; and having a concave-convex pattern A mold is imprinted on the reflective material layer to form the light reflecting structure having the uneven structure. 4. The method for fabricating a thin film solar cell according to claim 2, wherein the imprint process comprises: forming a light transmissive material layer on the second light-transmissive conductive layer; and forming a mold having a concave-convex pattern Embossing on the light transmissive material layer such that the surface of the light transmissive material layer is formed with the concavo-convex structure; and forming a reflective material layer on the light transmissive material layer. 5. The method of fabricating a thin film solar cell according to claim 4, wherein the reflective material layer is conformal to the light transmissive material layer. 23 201133912—“1.:wf.doc/n 6. The thin manufacturing method described in claim 2, the imprint process includes: imprinting a W battery with a first sub-pattern structure in the second through And embossing a second sub-pattern structure on the photoconductive layer and on the first sub-pattern structure, wherein the second sub-pattern structure and the first sub-pattern structure at least constitute the light inverse structure. ^ The shape of the light reflecting structure in the solar cell according to the fourth aspect of the invention includes a straight strip shape, a strip shape, a "residual shape, a lattice shape, a diamond shape, a honeycomb shape or a mosaic shape. The method for forming a thin-film solar cell according to the invention of claim i, wherein the method for forming a 5 glare reflective structure comprises a mesh process. 9. The method for fabricating a thin film solar cell according to claim 8 of the patent scope, The mesh process includes: arranging a mold having a mesh pattern on the second light-transmissive conductive layer, wherein the mesh pattern has a plurality of openings exposing the second light-transmissive conductive layer; and forming a reflective material layer And a part of the reflective material layer is filled in the openings to be connected to the second light-transmissive conductive layer; and the mold is removed to form the light-reflecting structure having the concave-convex structure. The method for processing a thin film solar cell according to the eighth aspect, wherein the mesh process comprises: forming a light transmissive material layer on the second light-transmissive conductive layer; and forming a mold mesh having a mesh pattern On the light transmissive material layer, the surface of the light transmissive material layer is formed with the structure of the mesh pattern by 24 201133912 ... -1 - J4twf.doc / n; removing the mold; and forming a reflective material layer thereon 11. The method of fabricating a thin film solar cell according to claim 8, wherein the mesh process comprises: arranging a first mold having a first mesh pattern in the second light transmission On the conductive layer, wherein the first mesh pattern has a plurality of first openings exposing the second light-transmissive conductive layer; forming a first sub-pattern structure on the first mold, wherein the first sub-pattern structure Connecting with a portion of the second light-transmissive conductive layer; arranging a second mold having a second mesh pattern, wherein the second mesh pattern has a plurality of second openings, and the second opening is 5 Forming at least a portion of the first-openings; and forming a second sub-pattern structure in the first, sub-pattern structure and the first sub-pattern structure; constituting the light-reflecting structure. Such as Shen Qing patent scope The production method of 11 households, 1 in the talk #M钍 media AA, the 溥 film too de-energy battery horizontal, .,: sub-F diamond shape: '; high shape: package 克 =, strip, The method of the invention is the same as the method of the invention. The metal is selected from the group consisting of solar cells, germanium, titanium, vanadium, chromium, 25 wf. D〇c/n 201133912 f, f, cobalt, nickel, copper, zinc, gallium, germanium, antimony, bismuth, antimony, molybdenum, etched, miscellaneous, palladium, silver, cadmium, indium, tin, antimony, antimony,釓, 铪, button, 铢, iron, 铱, platinum, gold, 初, 丨 L丨,, R Gan people into t-tungsten, 15. such as (four) 僧 two two and its alloys constitute the ethnic group. The production method of the film female mentioned in the 13th item, the JL medium material is too energy to battery oxide) ^, t smelting, nitriding: oxygen = oxygen = tin steel tin-tin (~= 16·such as In the thin manufacturing method described in claim 13 of the patent application, 1 is a _4; ^ #膜太Wpigment. The material 枓 includes a dye coffee or a pigment to make a Hr fiber 丨 丨 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And the two π passes through the transparent substrate, the first light-transmissive conductive layer, the light and the light are transmitted to the light-reflecting structure, and the light-reflecting structure reflects the wavelength range of the first beam substantially At least part of the beam from the meter to the 丄(10). Not the wood 18. As claimed in the scope of claim 17 = as a method 'where the part of the beam includes red light. Please refer to the method described in the first paragraph of the patent (4), which further includes covering an adhesive layer on the light-back transparent substrate and the light-transmissive substrate to carry out the county's