TW201130656A - Polishing pad and method of making the same - Google Patents
Polishing pad and method of making the same Download PDFInfo
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- TW201130656A TW201130656A TW099145034A TW99145034A TW201130656A TW 201130656 A TW201130656 A TW 201130656A TW 099145034 A TW099145034 A TW 099145034A TW 99145034 A TW99145034 A TW 99145034A TW 201130656 A TW201130656 A TW 201130656A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
- B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
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- H10P52/00—
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Polyurethanes Or Polyureas (AREA)
Abstract
Description
201130656 六、發明說明: 【先前技術】 在半導體器件及積體電路之製造期間,經由一系列沈積 及融刻步驟反覆處理石夕晶圓以形成上覆材料層及器件結 構。可使用被稱為化學機械平坦化(CMP)之拋光技術來移 除在沈積及蝕刻步驟之後剩餘之表面不規則物(諸如凸 塊、不等南度之區域、槽及溝槽),目標在於獲得無刮痕 或下陷(稱為表面凹陷)且晶圓表面具有高均一性的平滑晶 圓表面。 在典型CMP拋光製程中,諸如晶圓之基板被壓在拋光墊 上且在工作液體存在下相對於該拋光墊相對地移動,該工 作液體通常為研磨劑顆粒在水及/或蝕刻化學物質中之研 磨漿。已揭示了用於供研磨漿使用之各種CMP拋光墊,例 如’美國專利第5,257,478號(Hyde等人);第5,921,855號 (Osterheld 等人);第 6,126,532 號(Sevilla 等人);第 6,899,598 號(Prasad);及第 7,267,610 號(Elmufdi等人)。亦 已知固定研磨劑之拋光墊,如由美國專利第6,908,366號 (Gagliardi)所例示,其中研磨劑顆粒一般固定至墊之表 面’時常呈自墊表面延伸之經精密成形之研磨劑複合物的 形式。近來,在國際申請公開案第WO/2006057714號 (Bajaj)中描述了具有許多自可壓縮下層延伸之拋光元件的 拋光墊。儘管已知並使用了多種拋光墊,但此項技術繼續 搜尋用於CMP(特定而言為在使用較大晶粒直徑或需要較 高程度之晶圓表面平坦度及拋光均一性的CMP製程中)之 153112.doc 201130656 新型改良拋光墊。 【發明内容】 本發明提供具有含有熱固化組分及輻射固化組分之拋光 層的多孔拋光墊及製造該等拋光墊之方法。藉由使用聚合 物顆粒將孔併入至拋光層中。本文中所揭示之多孔拋光墊 中的孔為封閉氣室式孔’該等封閉氣室式孔一般比習知熱 固化拋光塾之孔具有較低的孔徑非均一性及較小的孔徑。 控制孔徑及分佈可有利於例如拋光墊之拋光效能。 在一態樣中,本發明提供一種拋光墊,其包含: 具有第一及第二對側之柔性層;及 安置於柔性層之第一側上的多孔拋光層,該多孔拋光層 包含: 包含熱固化組分及輻射固化組分之交聯網狀結構,其 中轄射固化組分及熱固化組分共價鍵結於交聯網狀結構 中; 分散於交聯網狀結構内之聚合物顆粒;及 分散於交聯網狀結構内之封閉氣室式孔。在一些實施 例中’拋光墊進一步包含插入於柔性層與多孔拋光層之 間的支撐層。 在另一態樣中,本發明提供一種製造拋光墊之方法,該 方法包含: 提供包含可熱固化樹脂組合物、可輻射固化樹脂組合物 及聚合物顆粒之組合物; 在組合物中形成孔; 153112.doc 201130656 將組合物定位於支撐層上;及 藉由將組合物曝露於輻射以至少部分地固化可輻射固化 樹脂組合物及加熱組合物以至少部分地固化可熱固化樹脂 組合物而在支撐層上形成多孔拋光層。在一些實施例中, 該方法進一步包含以黏合方式將柔性層黏結至多孔拋光層 之與該支撐層相對的表面。 在又一態樣中,本發明提供一種拋光方法,該方法包 含: 使基板之表面與根據本發明之拋光墊之多孔拋光層接 觸;及 相對於基板相對移動拋光墊以研磨基板之表面。 根據本發明之拋光墊的例示性實施例具有使其能夠用於 多種拋光應用中之各種特徵及特性。在一些實施例中,本 發明之拋光墊可尤其適用於積體電路及半導體器件製造中 所用之晶圓的化學機械平坦化(CMP)。在一些實施例中, 本發明中所描述之拋光墊可提供以下優點中之一些或全 部。 舉例而言,在一些實施例中,根據本發明之拋光墊可用 以在墊之拋光表面與所拋光之基板表面之間的界面處較佳 地保持用於CMP製程的工作液體,藉此改良工作液體在強 化拋光中之有效性。在其他例示性實施例中,根據本發明 之拋光墊可減小或消除拋光期間晶圓表面之凹陷及/或邊 緣沖蝕。在一些例示性實施例中,在CMP製程中使用根據 本發明之拋光墊可導致改良的晶圓内拋光均一性、較平坦 153112.doc 201130656 之經拋光晶圓表面、自晶圓之邊緣晶粒產率的增大,及經 改良之⑽製程操作條件及—致性。在其他實施财,使 用根據本發明之抛光墊可允許處理較大直經之晶圓,同時 維持所需程度之表面均一性以獲得高晶片產率,需要在調 節墊表面之前處理較多晶圓以便維持晶圓表面之拋光均一 性,或減少處理時間及墊調節劑上之磨損。 在本發明中: 孔徑非均一性」係指孔徑平均值除以平均孔徑乘以 100之標準差。 術語「聚胺基甲酸酯」係指具有一個以上呈任何組合的 胺基曱酉义醋鍵(·ΝΗ-(:(0)-0-)、脲鍵(_nh_c(〇)_nh_ 或-NH-C(〇)-N(R)-,其中r可為氫、脂族、環脂族或芳族 基)、縮二脲、脲基甲酸酯、脲二酮環或異氰酸酯鍵的聚 合物。 術S吾「(甲基)丙烯酸酯」係指丙烯酸酯及曱基丙烯酸 醋’其可包括胺基曱酸酯丙烯酸酯、甲基丙烯酸酯及丙烯 酸醋與甲基丙烯酸酯之組合。 術語「聚合」係指具有包括多個由低相對分子質量之分 子衍生之重複單元的結構的分子。術語「聚合」包括「寡 聚」。 諸如「一」及「該」之術語並不意欲僅指單數實體,而 是包括可用於說明之特定實例的一般種類。術語「一」及 「該」與術語「至少一個J可互換使用。 片語「...中之至少一者J及「包含…中之至少一者」繼 153112.doc 201130656 之以清單係指該清單中之各項目中的任一者及該清單中之 兩個或兩個以上項目的任何組合。 除非另外陳述,否則所有數字範圍包括其端點及端點之 間的非整數值。 已概述了本發明之例示性實施例之各種態樣及優勢。以 上發明内容並不意欲描述所說明之各實施例或本發明之每 個貫施。以下圖式及實施方式更特定地例示本發明之一些 實施例。 【實施方式】 參考附圖進一步描述本發明之例示性實施例。 在諸圖中,相同參考數字指示相同元件。本文中之諸圖 並非按比例繪製,且在諸圖中,確定拋光墊之組分的尺寸 以強調選定特徵。 典型CMP墊係由具有孔之熱固性(例如聚胺基甲酸酯)材 料構成。該等孔可使用多種方法產生,諸如微球法、可溶 纖維法、氣體陷入法(gas entrapment)(例如原地或異地產 生)及物理空氣陷入法。當使用此等方法時,歸因於聚合 期間所形成之溫度梯度、由成形操作引起之皮/芯效應、 纖維之分佈、可溶纖維之溶解速率及拋光化學物質,孔 經、孔容積及遍及墊之孔分佈的控制可具有挑戰性。 一些市售CMP墊具有在異氰酸酯樹脂之熱固化期間所產 生之開放氣室式墊構造。圖1展示可自PPG Industries (Pittsburgh,PA)以商品名「S7」購得之商業開放氣室式 CMP塾的剖視圖及俯視圖。如圖1中所展示,此塾中之孔 I53112.doc 201130656 的尺寸、形狀及分佈未加控制。 本發明係針對改良之多孔拋光墊,其中通常形成具有受 控之尺寸及均一性的封閉氣室式孔。現將描述本發明之各 種例示性實施例。本發明之例示性實施例在不脫離本發明 之精神及範疇的情況下可採取各種修改及變更。因此,應 理解本發明之實施例並不限於以下所描述之例示性實施 例,而是受控於申請專利範圍及其任何等效物中所闡述之 限制。 現參考圖2,多孔拋光墊2a包含柔性層1〇a及安置於柔性 層之側(亦即柔性層之一個主表面)上之多孔拋光層丨2a。 在多孔拋光層12a與柔性層10a之間插入視情況選用之支撐 層8a,其可用於本發明之多孔拋光墊及方法之一些實施 例。多孔拋光層包含交聯網狀結構、分散於交聯網狀結構 内之聚合物顆粒,及分散於交聯網狀結 孔:相比在抛光期間移除抛光塾之一組分以形 如藉由侵蝕或溶解)的拋光墊及方法,根據本發明之拋光 塾在拋光製程開始之前為多孔的。 抛光層中之例示性聚合物顆粒可包括熱塑性聚合物顆 粒、熱固性聚合物顆粒及其混合物。術語「熱塑性聚合 物」係指基本上不交聯且基本上不形成三維網狀結構之二 合材料。術語「熱固性」係指至少實質上交聯之聚合物, 其中該聚合物基本上具有三維網狀結構。在_些實㈣ 中’可選擇聚合物顆粒以使得在加熱之後㈣UU、 (亦即在聚合物顆粒之邊界處存在最小之塑性流且在 153112.doc 201130656 本發明之拋光墊的聚合物顆粒之顆粒之間幾乎無晶粒聚 結)m施例中’當塾之聚合物顆粒包含微:熱塑 性聚合物時,可在微粒熱塑性聚合物之熔點或燒結點以下 製備拋光塾。在其他實施例中,聚合物顆粒包㈣固性聚 合物。 可藉由各種方法(例如縮合反應、自由基引發反應或其 組合)來製備可用於實施本發明之聚合物顆粒。在苴他實 施例中,聚合物可包括藉由逐步或同時縮合及自由基聚合 反應形成之互穿聚合物網狀結構。在本發明中,術扭「互 穿聚合物網狀結構」()係指皆呈網狀結構形式之°兩種 聚合物的組合,該兩種聚合財之至少一者係在另一者之 直接存在下合成或交聯。通常,在㈣中,在兩種聚合物 之間不存在誘發的共價鍵。因此,除了機械摻合及共聚合 以外,/ΡΝ表示另一種可物理地組合不同聚合物之機制。 可藉由各種方法來製備聚合物顆粒。在-些實施例中, 可低溫研磨塊體聚合物並將其分類為所要之粒徑範圍。聚 合物顆粒之形狀可為規則的或不規則的,且可包括以下形 =體、纖維、圓盤、薄片及其任何組合或混合物。在 :施例中,聚合物顆粒實質上為球體。術語「實質上 玉' 體」係指顆粒具有至少0·75(在一些實施例中,至少 0·85、〇·9、〇·95、〇96、〇97或㈣)之球形度。在一 、'中聚合物顆粒為纖維。可用於實施本發明之纖 隹通常具有至少例如至少2:1、3:1、4:1、5:1、 10.1、25:1、5〇·ι、7<·ι • 」、100:1或更大)之縱橫比(亦即, 153IJ2.doc 201130656 最長尺寸對最短 在 2:1 至 100:1、 比。 尺寸)。可用於實施本發明之纖維可具有 5:1至75:1或1〇:1至5〇:1之範圍中的縱橫 在一些實施例中,聚合物顆粒可具有至少5(在—些實施 中至乂 7、1〇、15、20、25、30、40或50)微米之平均 在些實施例中,聚合物顆粒可具有至多5⑼(在一 二實施例中’至多_、30〇、200或_微米之平均粒 么°粒梭-般係'指顆粒之直徑;然而,在顆粒不為球體 (例如纖維)之實施例中,粒徑可指顆粒之最大尺寸。可藉 由習知方法來測定聚合物顆粒之平均粒徑。舉例而言,可 使用光散射技術(諸如由Beckman c〇uher Inc〇rp〇rated製造 及購得之Coulter LS粒徑分析器)來測定聚合物顆粒之平均 粒徑。如本文令及申請專利範圍中所使用,「粒徑」係指 基於容積百分比的顆粒直徑或最大尺寸,如藉由光散射使 用Coulter Counter LS粒徑分析器所測定。在此光散射技術 中’粒從係自流體力學迴轉半徑測定而與顆粒之實際形狀 無關。「平均」粒徑為基於容積百分比之顆粒之平均直 住。在一些貫施例中’尤其在顆粒為纖維之實施例中,纖201130656 VI. Description of the Invention: [Prior Art] During the manufacture of a semiconductor device and an integrated circuit, the Shihua wafer is repeatedly processed through a series of deposition and etching steps to form an overlying material layer and a device structure. Polishing techniques known as chemical mechanical planarization (CMP) can be used to remove surface irregularities (such as bumps, unequal south regions, trenches, and trenches) remaining after the deposition and etching steps, with the goal of A smooth wafer surface with no scratches or sags (referred to as surface depressions) and high uniformity on the wafer surface is obtained. In a typical CMP polishing process, a substrate, such as a wafer, is pressed against a polishing pad and relatively moved relative to the polishing pad in the presence of a working liquid, typically the abrasive particles are in water and/or etch chemistry. Grinding the slurry. Various CMP polishing pads for use with a slurry have been disclosed, for example, in U.S. Patent No. 5,257,478 (Hyde et al.); 5,921,855 (Osterheld et al.); 6, 126,532 (Sevilla et al.); No. 6,899,598 (Prasad); and 7,267,610 (Elmufdi et al.). A polishing pad of a fixed abrasive is also known, as exemplified by U.S. Patent No. 6,908,366 (Gagliardi), in which abrasive particles are generally fixed to the surface of the pad, often with a precision-formed abrasive composite extending from the surface of the pad. form. Recently, a polishing pad having a plurality of polishing elements extending from a compressible lower layer has been described in International Application Publication No. WO/2006057714 (Bajaj). Although a variety of polishing pads are known and used, this technology continues to search for CMP (particularly in CMP processes where larger die sizes are used or where higher levels of wafer surface flatness and polishing uniformity are required) ) 153112.doc 201130656 New modified polishing pad. SUMMARY OF THE INVENTION The present invention provides a porous polishing pad having a polishing layer comprising a thermally curable component and a radiation curable component, and a method of making the same. The pores are incorporated into the polishing layer by using polymer particles. The apertures in the porous polishing pads disclosed herein are closed-cell apertures. These closed-chamber apertures generally have lower aperture non-uniformities and smaller apertures than conventional thermally cured polishing apertures. Controlling the aperture and distribution can facilitate, for example, the polishing performance of the polishing pad. In one aspect, the present invention provides a polishing pad comprising: a flexible layer having first and second opposite sides; and a porous polishing layer disposed on a first side of the flexible layer, the porous polishing layer comprising: a crosslinked network structure of a heat curing component and a radiation curing component, wherein the conditioned curing component and the heat curing component are covalently bonded in the crosslinked network structure; the polymer particles dispersed in the crosslinked network structure; A closed cell cavity that is dispersed within the interconnected network structure. In some embodiments the polishing pad further comprises a support layer interposed between the flexible layer and the porous polishing layer. In another aspect, the present invention provides a method of making a polishing pad, the method comprising: providing a composition comprising a heat curable resin composition, a radiation curable resin composition, and polymer particles; forming a hole in the composition 153112.doc 201130656 positioning the composition on the support layer; and at least partially curing the radiation curable resin composition and heating the composition to at least partially cure the heat curable resin composition by exposing the composition to radiation A porous polishing layer is formed on the support layer. In some embodiments, the method further comprises bonding the flexible layer to the surface of the porous polishing layer opposite the support layer in an adhesive manner. In still another aspect, the present invention provides a polishing method comprising: contacting a surface of a substrate with a porous polishing layer of a polishing pad according to the present invention; and relatively moving the polishing pad relative to the substrate to polish a surface of the substrate. An exemplary embodiment of a polishing pad in accordance with the present invention has various features and characteristics that enable it to be used in a variety of polishing applications. In some embodiments, the polishing pad of the present invention is particularly useful for chemical mechanical planarization (CMP) of integrated circuits and wafers used in the fabrication of semiconductor devices. In some embodiments, the polishing pads described in this disclosure may provide some or all of the following advantages. For example, in some embodiments, a polishing pad in accordance with the present invention can be used to preferably maintain a working fluid for a CMP process at the interface between the polishing surface of the pad and the surface of the substrate being polished, thereby improving the work. The effectiveness of liquids in intensive polishing. In other exemplary embodiments, the polishing pad in accordance with the present invention can reduce or eliminate dishing and/or edge erosion of the wafer surface during polishing. In some exemplary embodiments, the use of a polishing pad in accordance with the present invention in a CMP process results in improved in-wafer polishing uniformity, flatter 153112.doc 201130656 polished wafer surface, self-wafer edge dies The increase in yield, and the improved (10) process conditions and properties. In other implementations, the use of a polishing pad in accordance with the present invention allows for handling of relatively large wafers while maintaining the desired degree of surface uniformity to achieve high wafer yields, requiring more wafers to be processed prior to conditioning the pad surface. In order to maintain the polishing uniformity of the wafer surface, or to reduce the processing time and wear on the pad conditioner. In the present invention: "aperture non-uniformity" means the average value of the pore diameter divided by the average pore diameter multiplied by 100 standard deviation. The term "polyurethane" refers to an amine-based vinegar bond having one or more combinations in any combination (·ΝΗ-(:(0)-0-), a urea bond (_nh_c(〇)_nh_ or -NH a polymer of -C(〇)-N(R)-, wherein r can be hydrogen, aliphatic, cycloaliphatic or aromatic), biuret, allophanate, uretdione or isocyanate linkage The term "(meth)acrylate" means acrylate and mercapto acrylate" which may include a combination of amino phthalate acrylate, methacrylate, and acrylate and methacrylate. "Polymerization" means a molecule having a structure comprising a plurality of repeating units derived from molecules of low relative molecular mass. The term "polymerization" includes "oligomerization". Terms such as "a" and "the" are not intended to mean singular. Entity, but includes general categories that can be used for specific examples of the description. The terms "a" and "the" are used interchangeably with the term "at least one J. The phrase "at least one of J" and "includes... At least one of the following is a list of 153112.doc 201130656 which refers to any of the items in the list and Any combination of two or more items in the list. Unless otherwise stated, all numerical ranges include non-integer values between the endpoints and the endpoints. The various embodiments of the exemplary embodiments of the present invention have been summarized. The above summary is not intended to describe the embodiments or the various embodiments of the present invention. The following drawings and embodiments more particularly exemplify some embodiments of the present invention. In the drawings, the same reference numerals are used to refer to the same elements. The figures herein are not drawn to scale, and in the figures, the dimensions of the components of the polishing pad are determined to emphasize selected features. A typical CMP pad is constructed of a thermoset (e.g., polyurethane) material having pores that can be produced using a variety of methods, such as microspheres, soluble fiber methods, gas entrapment (e.g. In situ or off-site) and physical air trapping. When using these methods, due to the temperature gradient formed during the polymerization, caused by the forming operation Skin/core effects, fiber distribution, dissolution rate of soluble fibers, and polishing chemistry, pore size, pore volume, and pore distribution throughout the pad can be challenging. Some commercially available CMP pads have thermal cure in isocyanate resins. Open air chamber pad construction produced during the period. Figure 1 shows a cross-sectional view and a top view of a commercially available open cell CMP crucible available from PPG Industries (Pittsburgh, PA) under the trade designation "S7". The size, shape and distribution of the hole I53112.doc 201130656 in this crucible are not controlled. The present invention is directed to an improved porous polishing pad in which a closed cell cavity having a controlled size and uniformity is typically formed. Various illustrative embodiments of the invention are described. Various modifications and changes may be made without departing from the spirit and scope of the invention. Therefore, it is to be understood that the embodiments of the invention are not limited to the exemplified embodiments described below, but are limited by the scope of the claims and any equivalents thereof. Referring now to Figure 2, the porous polishing pad 2a comprises a flexible layer 1a and a porous polishing layer 2a disposed on the side of the flexible layer (i.e., a major surface of the flexible layer). A support layer 8a, optionally selected, is interposed between the porous polishing layer 12a and the flexible layer 10a, which can be used in some embodiments of the porous polishing pad and method of the present invention. The porous polishing layer comprises a crosslinked network structure, polymer particles dispersed in the interconnected network structure, and dispersed in the crosslinked networked junction holes: as compared to removing one of the components of the polishing crucible during polishing to be shaped by erosion or The polishing pad and method of the present invention, the polishing pad according to the present invention is porous prior to the start of the polishing process. Exemplary polymer particles in the polishing layer can include thermoplastic polymer particles, thermoset polymer particles, and mixtures thereof. The term "thermoplastic polymer" means a composite material that is substantially non-crosslinking and does not substantially form a three-dimensional network structure. The term "thermosetting" refers to a polymer that is at least substantially crosslinked, wherein the polymer has substantially a three-dimensional network structure. In the case of (4), the polymer particles may be selected such that after heating (IV) UU, (ie, there is minimal plastic flow at the boundary of the polymer particles and at 153112.doc 201130656 the polymer particles of the polishing pad of the present invention There is almost no grain coalescence between the particles. In the example, when the polymer particles of the crucible contain a micro: thermoplastic polymer, a polishing crucible can be prepared below the melting point or sintering point of the microparticulate thermoplastic polymer. In other embodiments, the polymer particles comprise (iv) a solid polymer. The polymer particles useful in the practice of the invention can be prepared by a variety of methods, such as condensation reactions, free radical initiated reactions, or combinations thereof. In other embodiments, the polymer may comprise an interpenetrating polymer network formed by stepwise or simultaneous condensation and free radical polymerization. In the present invention, the torsion "interpenetrating polymer network structure" () refers to a combination of two polymers in the form of a network structure, at least one of which is in the other Synthetic or cross-linking in the presence of direct. Usually, in (iv), there is no induced covalent bond between the two polymers. Thus, in addition to mechanical blending and copolymerization, /ΡΝ represents another mechanism by which different polymers can be physically combined. The polymer particles can be prepared by various methods. In some embodiments, the bulk polymer can be cryogenically milled and classified into the desired particle size range. The shape of the polymeric particles can be regular or irregular and can include the following forms: bodies, fibers, disks, flakes, and any combination or mixture thereof. In the embodiment: the polymer particles are substantially spheres. The term "substantially jade" means that the particles have a sphericity of at least 0.75 (in some embodiments, at least 0.85, 〇9, 〇95, 〇96, 〇97 or (4)). In one, 'the polymer particles are fibers. Fibres useful in the practice of the invention typically have at least, for example, at least 2:1, 3:1, 4:1, 5:1, 10.1, 25:1, 5〇·ι, 7<·ι • ”, 100:1 Or larger) aspect ratio (ie, 153IJ2.doc 201130656 longest dimension pair minimum 2:1 to 100:1 ratio). Fibers useful in the practice of the invention may have a cross-section in the range of 5:1 to 75:1 or 1〇:1 to 5〇:1. In some embodiments, the polymer particles may have at least 5 (in some embodiments) Average to 7, 5, 15, 20, 25, 40, or 50) micrometers In some embodiments, the polymer particles can have up to 5 (9) (in one embodiment, at most _, 30 〇, 200) Or the average particle size of _micron is the diameter of the particle; however, in the embodiment where the particle is not a sphere (for example, fiber), the particle size may refer to the largest size of the particle. To determine the average particle size of the polymer particles. For example, light scattering techniques such as the Coulter LS particle size analyzer manufactured and sold by Beckman C〇uher Inc. Particle size. As used herein and in the scope of the patent application, "particle size" means the particle diameter or maximum size based on volume percent, as determined by light scattering using a Coulter Counter LS particle size analyzer. In the technology, the particle system is determined from the hydrodynamic radius of gyration. Regardless of the actual shape of the particles. "Average" particle size is based on the average volume percentage of particles of linear live Example In some embodiments consistent 'particles are particularly fibers, the web
維具有至多約600、500或450微米(30、35或40目(U SDimensions up to about 600, 500 or 450 microns (30, 35 or 40 mesh (U S
Mesh))之最大粒徑’如藉由習知篩選技術所測定。舉例而 言’在一些實施例中’至少97%、98%或99%的纖維通過 具有600、500或400微米(30、35或40目)之孔眼的篩網。 在一些實施例中,聚合物顆粒具有高度均一性。在—些 實施例中,聚合物顆粒之尺寸的非均一性為至多75%(在一 I53112.doc -11 - 201130656 些實施例中,至多70〇/〇、65%、60。/〇、55。/〇或50〇/〇)。粒徑非 均一性係指粒徑標準差除以平均粒徑乘以1〇〇。 在一些實施例中,聚合物顆粒實質上為實心。如本文中 所使用,術語「實質上實心」意謂微粒聚合物並不中空, 例如聚合物顆粒不呈中空微囊之形式。然而,在一些實施 例中,實質上實心之聚合物顆粒可含有陷入氣泡。 適合之聚合物顆粒包括聚氣乙烯、聚氟乙烯、聚乙烯、 聚丙烯、耐綸、聚碳酸酯、聚酯、聚(甲基)丙烯酸酯、聚 醚、聚醯胺、聚胺基甲酸醋、聚環氧化物、聚苯乙烯、聚 醯亞胺(例如聚醚醯亞胺)、聚砜及其混合物。在一些實施 例中’聚合物顆粒可選自聚(甲基)丙稀酸醋、聚胺基甲酸 酯、聚環氧化物及其混合物。 在一些實施例中,聚合物顆粒包含水溶性顆粒。例示性 的有用的水溶性顆粒包括由醣(例如多醣,諸如糊精、環 糊精、殿粉、甘㈣及乳糖)、纖維素(例如祕丙基纖維 素及甲基纖維素)、蛋白質、聚乙稀醇、聚乙烯吡咯啶 _、聚丙烯酸、聚氧化乙烯、水溶性感光樹脂、罐化聚異 戊二婦、績化聚異戊m物及其任何組合製成的顆 粒:在-些實施财’聚合物顆粒包含纖維素。在—些此 等實施例中,聚合物顆粒包含甲基纖維素。即使在此等實 施例中聚合物顆粒包含水溶性顆粒,#形成拋光層”等 =合物顆粒仍可在拋光層中形成孔。不需要在拋光期間可 溶解顆粒之工作液體來形成孔。 在—些實施例中,聚合物顆粒包含聚胺基甲酸酷,其可 153112.doc -12· 201130656 例如自包含至少兩個異氰酸酯基及/或具有至少兩個封端 異氰酸酯基之封端異氰酸酯反應物的樹脂及具有至少兩個 可與異氰酸酯基反應之基團的第二樹脂製備。 在一些實施例中,第一及第二樹脂可混合在一起且經聚 合或固化以形成塊體聚胺基甲酸酯,其可接著研磨(例如 低溫研磨),且視情況分類◦在一些實施例中,聚合物顆 粒可藉由將第一及第二樹脂混合在一起,緩慢地將混合物 澆注至攪拌下的經加熱之去離子水中(視情況在有機共溶 劑及/或界面活性劑存在下),分離所形成之微粒材料(例如 藉由過濾)’乾燥經分離之微粒材料,及視情況分類經乾 燥之微粒聚胺基f酸醋而形成。在另一實施例中,可在有 :溶劑(例如醇、水不溶性醚、分支鏈及直鏈烴、酮、甲 本、二甲苯及其混合物)存在τ將異氰酸自旨與氫材料混合 在一起。 貝死*例 、 w 〇二/ w脚兴讯釅酯基之第一樹脂 ::自異氰酸酯官能性單體、異氰酸酯官能性預聚物及其 。例示性之適合異氰㈣單體包括脂族聚異氰酸醋; ==聚異氛酸醋;脂環聚異氛酸醋;異氛酸醋基不 接I於芳環之芳族聚異氰酸醋,例如…二甲苯二異 例基直接鍵結於芳環之芳族聚異氛酸醋: 經燒氧:化:化此等聚異氰酸醋之㈣化,化、 rnzirm 咴化一亞胺改質、經脲改質及經 =之街生物;及此等聚異氛酸醋之二聚合及三聚 153112.doc 13 201130656 例示性脂族聚異氰酸酯包括二異氰酸伸乙酯、二異氰酸 三亞甲酯、二異氰酸四亞甲酯、二異氰酸六亞甲酯、二異 氰酸八亞曱酯、二異氰酸九亞曱酯、2,2·-二甲基戊烷二異 氰酸酯、2,2,4·三甲基己烷二異氰酸酯、二異氰酸十亞曱 酯、二異氰酸2,4,4-三曱基六亞甲酯、1,6,1-十一烷三異氰 酸酯、三異氰酸1,3,6·六亞曱酯、l,8-二異氰酸基-4-(異氰 酸基曱基)辛烷、2,5,7-三甲基-1,8-二異氰酸基-5-(異氰酸 基甲基)辛烷、雙(異氰酸基乙基)-碳酸酯、雙(異氰酸基乙 基)醚、2-異氰酸基丙基-2,6-二異氰酸基已酸酯、離胺酸 一異氰酸甲醋、離胺酸三異氰酸曱S旨及其混合物。 例示性之適合烯系不飽和聚異氰酸酯可包括丁烯二異氰 酸酯及1,3-丁二烯-1,4-二異氰酸酯。例示性之適合脂環聚 異氰酸酯包括異佛爾酮二異氰酸酯、環己烷二異氰酸酯、 甲基環己烷二異氰酸酯、雙(異氰酸基甲基)環己烷、雙(異 氰酸基環己基)曱烷、雙(異氰酸基環己基)_2,2-丙烷、雙 (異氰酸基環己基)·1,2-乙烷、2-異氰酸基甲基-3-(3-異氰酸 基丙基)-5-異氰酸基曱基-雙環[2.2.1]-庚烷、2-異氰酸基甲 基-3-(3-異氰酸基丙基)-6-異氰酸基甲基-雙環[2.2.1 ]_庚 烷、2-異氰酸基甲基-2-(3-異氰酸基丙基)-5-異氰酸基曱 基-雙環[2.2.1]-庚烷、2-異氰酸基甲基_2·(3-異氰酸基丙 基)-6-異氰酸基甲基-雙環[2.2.1]-庚烷、2-異氰酸基甲基-3-(3-異氰酸基丙基)-6-(2-異氰酸基乙基)_雙環[2 2丨]_庚 烷、2-異氰酸基曱基-2-(3-異氰酸基丙基)-5-(2-異氰酸基乙 基)-雙環[2.2.1]-庚烷、2-異氰酸基甲基_2_(3_異氰酸基丙 153112.doc -14, 201130656 基)-6-(2-異氰酸基乙基)-雙環[m]-庚烷及其混合物。 異氰酸酯基不直接鍵結於芳環之例示性芳族聚異氰酸酯 包括雙(異氰酸基乙基)苯、α,α,α’,α’-四甲基二甲苯二異氛 酸酯、1,3-雙(1-異氰酸基-i•甲基乙基)苯 '雙(異氰酸基丁 基)苯、雙(異氰酸基曱基)萘、雙(異氰酸基甲基)二苯醚、 雙(異氰酸基乙基)鄰苯二曱酸酯、均三甲苯三異氰酸g旨、 2,5 _ —(異氰酸基甲基)°夫味及其混合物。 具有直接鍵結於芳環之異氰酸酯基之例示性的適合芳族 聚異氰酸酯包括二異氰酸伸笨酯、二異氰酸乙基伸笨酯、 二異氰酸異丙基伸苯酯、二異氰酸二甲基伸苯酯、二異氰 酸二乙基伸苯酯、二異氰酸二異丙基伸苯酯、三甲基苯三 異氰酸酯、苯三異氰酸酯、萘二異氰酸酯、曱基萘二異氰 酸醋、聯苯二異氰酸酯、鄰聯甲苯胺二異氰酸酯、4,4,_二 苯基甲烷二異氰酸酯、雙(3-甲基-4-異氰酸基苯基)曱烷、 雙(異氰酸基苯基)乙烯、3,3'-二甲氧基·聯苯-4,4,-二異氰 酸醋、三苯基甲烷三異氰酸酯 '聚合4,4,-二苯基曱烷二異 氰酸醋、萘三異氰酸酯、二苯基甲烷_2,4,4,-三異氰酸酯、 4-甲基二苯基甲烷_3,5,2,,4,,6'-五異氰酸酯、二苯基醚二異 氰酸酯、雙(異氰酸基苯基醚)乙二醇、雙(異氰酸基苯基 醚)-1,3 -丙二醇、二苯甲酮二異氰酸酯、咔唑二異氰酸 醋、乙基咔唑二異氰酸酯、二氣咔唑二異氰酸酯及其混合 物。 在一些實施例中,包含至少兩個異氰酸酯基之第一樹脂 係選自由α,α'-二曱苯二異氰酸酯、α,α,α,,α|-四曱基二甲苯 153112.doc -15· 201130656 二異氰酸酯、異佛爾酮二異氰酸酯、雙(異氰酸基環己基) 甲烧、甲苯二異氰酸酯、4,4·-二苯甲烷二異氰酸酯及其混 合物組成之群。 在一些實施例中’具有至少兩個異氰酸酯基之第一樹脂 可包含異氰酸酯官能性聚胺基甲酸酯預聚物。可藉由各種 習知技術來製備異氰酸酯官能性聚胺基曱酸酯預聚物。在 一些實施例中,至少一種多元醇(諸如二醇)及至少一種異 氛酸酷官能性單體(諸如二異氰酸酯單體)可一起反應以形 成具有至少兩個異氰酸酯基之聚胺基甲酸酯預聚物。例示 性之適合異氰酸酯官能性單體包括前述之異氰酸酯官能性 單體》 可用於實施本發明之適合的異氰酸酯官能性聚胺基甲酸 酯預聚物可具有在寬範圍内變化之分子量。在一些實施例 中’異氰酸酯官能性聚胺基甲酸酯預聚物可具有5〇〇至 15,000或500至5000之數目平均分子量(Μη),如例如藉由 使用聚苯乙烯標準之透膠層析術(GPC)所測定。 可用於製備異氰酸酯官能性聚胺基曱酸酯預聚物之例示 性多元醇包括直鏈或分支鏈烷多元醇,諸如1,2·乙二醇、 1,3-丙二醇、1,2-丙二醇、ι,4-丁 二醇、1,3-丁二醇、甘 油、新戊二醇、三羥甲基乙烷、三羥甲基丙烷、二-三羥 曱基丙烷、赤藻糖醇、異戊四醇及二-異戊四醇;聚伸烷 一醇’绪如一 ·乙二醇、三-乙二醇及四-乙二醇,及二-丙 二醇、三-丙二醇及四-丙二醇;環狀炫多元醇,諸如環戊 二醇、環己二醇、環己三醇、環己烷二曱醇、羥丙基環己 153112.doc •16- 201130656 醇及環己烷二乙酵;芳族多元醇,諸如二羥基苯、苯三 醇、羥基笨甲醇及二羥基甲苯;雙酚,諸如4,4'-亞異丙基 二酚(雙酚A) ; 4,4,-氧基雙酚、4,4,-二羥基二笨甲酮、4,4,-硫代雙盼、盼欧(phenolphthlalein)、雙(4-經苯基)曱烧(雙 酚F)、4,4,-(1,2·乙烯二基)雙酚及4,4,-磺醯基雙酚;鹵化雙 酚’諸如4,4,-亞異丙基雙(2,6 -二溴苯酚)、4,4,-亞異丙基 雙(2,6-二氣苯酚)及4,4’-亞異丙基雙(2,3,5,6-四氣笨紛); 烧氧基化雙酚,諸如具有一或多個烷氧基(諸如乙氧基、 丙氧基、α-丁氧基及β-丁氧基)之烷氧基化4,4'-亞異丙基雙 紛;及雙環己醇’其可藉由氫化相應雙酚來製備,諸如 4,4'-亞異丙基-雙環己醇、4,4,-氧基雙環己醇、4,4,-硫代雙 環己醇及雙(4-羥基環己醇)曱烷。 可用於製備異氰酸酯官能性聚胺基曱酸酯預聚物之適合 多元醇的其他實例包括高碳數聚伸烷二醇,諸如具有2〇〇 至2000公克/莫耳之數目平均分子量(Μη)的聚乙二醇;帶 有羥基之丙稀酸系物,諸如由(曱基)丙烯酸酯與羥基官能 性(甲基)丙烯酸酯之共聚合所形成者,諸如甲基丙烯酸曱 酯與甲基丙烯酸羥基乙酯共聚物;及羥基官能性聚酯,諸 如由二醇(諸如丁二醇)與二酸或二酯(諸如己二酸或己二酸 一乙s曰)之反應所形成者。在一些實施例中,可用於實施 本發明之多元醇可具有200至2000公克/莫耳之數目平均分 子量(Μη)。 在一些實施你1令,彳肖由使諸如f $二異I酸醋之二異 氰酉“曰與諸如聚(四氫呋喃)之聚伸烷二醇反應來製備異氛 153IJ2.doc 201130656 酸酯官能性聚胺基甲酸酯預聚物。 在一些實施例中’可在催化劑存在下製備異氰酸酯官能 性聚胺基甲酸酯預聚物。在一些實施例中,以多元醇及異 氰酸酯官能性單體之總重量計,所使用之催化劑的量可小 於5重量%,或小於3重量%,或小於1重量%»在一些實施 例中,例示性之適合催化劑包括有機酸之亞錫加成物,諸 如辛酸亞錫、二月桂酸二丁基錫、二乙酸二丁基錫、硫醇 二丁基錫、二順丁烯二酸二丁基錫、二乙酸二甲基錫、二 月桂酸二曱基錫、1,4-二氮二環[2.2.2]辛烷及其混合物。 在其他實施例中,催化劑可為辛酸鋅、鉍或乙醯基丙酮酸 鐵。其他例示性之適合催化劑包括三級胺,諸如三乙胺、 三異丙胺及N,N-二曱基苄胺。 在一些實施例中’對於可用於製造聚合物顆粒之聚胺基 曱酸S旨而言’具有至少兩個異氰酸g旨基之第一樹脂包括具 有至少兩個封端異氰酸酯基之封端異氰酸酯化合物。術語 封端異氰酸醋化合物」係指具有可轉換為去封端(亦即 游離)異氰酸酯基且分離或釋放封端基團之末端及/或側位 封端異氰酸酯基的單體或預聚物。適合異氰酸酯化合物之 任何前述實例可經封端◊封端異氰酸酯之例示性非短效封 端基團包括1H- 坐,諸如1H-咪嗤、1H- 〇比β坐、3,5-二甲 基-1Η·吡唑、1Η-1,2,3-三唑、1Η-1,2,3-苯并三唑、 1Η·1,2,4-三唑、1Η-5-曱基 _1,2,4-三唑及 1Η-3-胺基 _1,2,4_ 二°坐,内酿胺,諸如e_己内醯胺及咬酮;嗎琳,諸 如3-胺丙基嗎啉;及义羥基鄰笨二曱醯亞胺。封端異氰酸 1531I2.doc •18· 201130656 醋化合物之例示性短效封端基團包括醇類,諸如丙醇、異 丙醇、丁醇、異丁醇、第三丁醇及己醇;伸烷二醇單烷基 喊,諸如乙二醇單烷基醚(例如乙二醇單丁基醚及乙二^ 單己基醚)及丙二醇單烷基醚(例如丙二醇單甲基醚);及酮 肟,諸如甲基乙基酮肟。 不意欲受任何理論束缚,咸信具有至少兩個異氰酸醋基 之第一樹脂中包括封端異氰酸酯材料可導致在以下位置形 成共價鍵:(a)在微粒聚胺基曱酸酯顆粒之至少一部分之 間;及/或(b)在微粒聚胺基甲酸酯之至少一部分與交聯網 狀結構之至少一部分之間。在一些實施例中,以游離異氰 酸酯及封端異氰酸酯基之總莫耳當量計,封端異氰酸酯化 合物的含量可使得第一樹脂封端異氰酸酯基之量為至少5 莫耳%、或至少10莫耳%、或小於4〇莫耳%、或小於5〇莫 耳% 0 具有至少兩個可與異氰酸酯基反應之基團的第二樹脂可 選自多種材料。在一些實施例中,第二樹脂具有選自羥 基、疏基、一級胺、二級胺及其組合之官能基。例示性之 適合第二樹脂包括前述多元醇。 在一些實施例中,可具有至少兩個可與異氰酸酯基反應 之基團的第二樹脂包括多元胺。例示性多元胺包括伸乙 胺,諸如乙二胺(EDA)、二伸乙基三胺(DETA)、三伸乙基 四胺(TETA)、四伸乙基五胺(TEPA)、五伸乙基六胺 (PEHA)、哌嗪、二乙二胺(DEDA)a2_胺基小乙基哌嗪。 其他例示性之適合多元胺包括二烷基甲笨二胺之一或多種 153112.doc •19· 201130656 異構物,諸如3,5-二甲基-2,4-甲苯二胺、3,5-二甲基-2,6-甲苯二胺、3,5-二乙基-2,4_甲苯二胺、3,5_二乙基-2,6-曱 苯二胺、3,5·二異丙基-2,4-甲苯二胺、3,5-二異丙基-2,6-曱苯二胺及其混合物。在一些實施例中,多元胺可選自亞 甲基二苯胺、丙二醇二(對-胺基苯甲酸酯)及以胺封端之寡 聚物及預聚物。 在一些實施例中,適合之多元胺可選自基於4,4'-亞甲 基-雙(二烷基苯胺)(例如4,4·-亞曱基-雙(2,6-二甲基苯胺)、 4,4,-亞曱基-雙(2,6-二乙基苯胺)、4,4'-亞甲基-雙(2-乙 基-6-曱基苯胺)、4,4’-亞曱基-雙(2,6-二異丙基苯胺)、4,4’-亞甲基-雙(2-異丙基-6-曱基苯胺)、4,4·-亞曱基-雙(2,6-二 乙基-3-氣苯胺)及其混合物)的多元胺。 在一些實施例中,可在催化劑存在下由包含至少兩個異 氰酸酯基之第一樹脂及包含至少兩個可與異氰酸酯反應之 基團的第二樹脂製備微粒聚胺基甲酸酯。適合催化劑包括 以上針對異氰酸酯官能性聚胺基甲酸酯預聚物之製備而列 出者。 在一些實施例中,異氰酸酯基及視情況選用之封端異氰 酸酯基對可用於製備微粒聚胺基曱酸酯之異氰酸酯反應性 基團的莫耳當量比為0.5:1.0至1.5:1.0,例如〇·7:1.〇至 1.3:1.0或0.8:1.0至1,2:1.0。在一些實施例中,可藉由使用 小於化學計量上所需量之第二樹脂來製備交聯聚胺基曱酸 酯,以使得胺基曱酸酯或脲鍵將與剩餘異氰酸酯反應。在 其他實施例中,用三官能性化合物對二官能性化合物進行 153112.doc -20· 201130656 部分置換將導致更為熱穩定之化學交聯。 一些有用之微粒聚胺基甲酸酯可自例如Dainichiseika Color & Chemicals Mfg. Co., Ltd. Advanced Polymer Group (Tokyo, Japan)以商品名「DAIMIC-BEAZ」購得,等級為 「UCN-5350D」、「UCN-5150D」及「UCN-5070D」;聚胺 基甲酸 S旨顆粒可自 Negami Chemical Industrial Co., Ltd.(Nomi-city,Japan)以商品名「ART PEARL」購得;且 基於脂族聚醚之熱塑性聚胺基曱酸酯可自例如BayerThe maximum particle size of Mesh)) is determined by conventional screening techniques. By way of example, in some embodiments, at least 97%, 98%, or 99% of the fibers pass through a screen having apertures of 600, 500, or 400 microns (30, 35, or 40 mesh). In some embodiments, the polymer particles are highly uniform. In some embodiments, the non-uniformity of the size of the polymer particles is at most 75% (in some embodiments, I53112.doc -11 - 201130656, in some embodiments, up to 70 〇 / 〇, 65%, 60 〇 / 〇, 55 ./〇 or 50〇/〇). Particle size non-uniformity refers to the standard deviation of the particle size divided by the average particle size multiplied by 1 〇〇. In some embodiments, the polymer particles are substantially solid. As used herein, the term "substantially solid" means that the particulate polymer is not hollow, for example, the polymeric particles are not in the form of hollow microcapsules. However, in some embodiments, substantially solid polymer particles may contain trapped bubbles. Suitable polymer particles include polyethylene, polyvinyl fluoride, polyethylene, polypropylene, nylon, polycarbonate, polyester, poly(meth)acrylate, polyether, polyamine, polyurethane vinegar Polyepoxides, polystyrenes, polyimines (such as polyetherimine), polysulfones, and mixtures thereof. In some embodiments, the polymer particles can be selected from the group consisting of poly(methyl) acrylate vinegars, polyurethanes, polyepoxides, and mixtures thereof. In some embodiments, the polymer particles comprise water soluble particles. Exemplary useful water soluble particles include those derived from sugars (eg, polysaccharides such as dextrin, cyclodextrin, dinosaur, glycerol, and lactose), cellulose (eg, propylcellulose and methylcellulose), proteins, Granules made of polyethylene glycol, polyvinylpyrrolidine _, polyacrylic acid, polyethylene oxide, water-soluble photosensitive resin, canned polyisoprene, synthetic polyisoprene and any combination thereof: in some The implementation of the polymer particles contains cellulose. In some of these embodiments, the polymer particles comprise methylcellulose. Even though the polymer particles comprise water soluble particles in these embodiments, the #forming polishing layer" or the like particles can still form pores in the polishing layer. It is not necessary to dissolve the working liquid of the particles during polishing to form pores. In some embodiments, the polymer particles comprise a polyurethane, which may be 153112.doc -12· 201130656, for example, from a blocked isocyanate reactant comprising at least two isocyanate groups and/or having at least two blocked isocyanate groups. And a second resin prepared having at least two groups reactive with isocyanate groups. In some embodiments, the first and second resins may be mixed together and polymerized or cured to form a bulk polyamine group. An acid ester, which can then be ground (e.g., cryogenically ground), and optionally classified. In some embodiments, the polymer particles can be slowly poured into the agitated mixture by mixing the first and second resins together. Separating the formed particulate material (eg by filtration) in heated deionized water (as appropriate in the presence of organic cosolvents and/or surfactants) The separated particulate material, and optionally the dried particulate polyamine-based f-acid vinegar, is formed. In another embodiment, there may be: a solvent (eg, an alcohol, a water-insoluble ether, a branched chain, and a linear hydrocarbon, a ketone). , abenz, xylene, and mixtures thereof, the presence of τ to mix isocyanic acid with the hydrogen material. The first resin of the 死 * 例 w w / : : : : : : : : : : : : : : : Sexual monomer, isocyanate functional prepolymer and its exemplary suitable isocyanate (tetra) monomer including aliphatic polyisocyanuric acid; == polyiso-acid vinegar; alicyclic polyiso-acid vinegar; Aromatic polyisocyanuric acid which is not attached to the aryl group of the aryl group, for example, xylene diisyl group is directly bonded to the aromatic polyaryl vinegar of the aromatic ring: by burning oxygen: chemicalizing: Cyanate vinegar (4), rnzirm oximation, imine modification, urea modification and chemistry of the street; and the polymerization and trimerization of these polyacid vinegars 153112.doc 13 201130656 Aliphatic polyisocyanates include ethyl diisocyanate, trimethylene diisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate , octadecyl diisocyanate, nona decyl diisocyanate, 2,2·-dimethylpentane diisocyanate, 2,2,4·trimethylhexane diisocyanate, diisocyanate Decylene ester, 2,4,4-trimethylhexamethylene diisocyanate, 1,6,1-undecane triisocyanate, 1,3,6·hexamethylene phthalate, 1,8-Diisocyanato-4-(isocyanatodecyl)octane, 2,5,7-trimethyl-1,8-diisocyanato-5-(isocyanato Methyl)octane, bis(isocyanatoethyl)-carbonate, bis(isocyanatoethyl)ether, 2-isocyanatopropyl-2,6-diisocyanatohexanoic acid Ester, lysine mono-ocyanate methyl acetonate, leuco-trisocyanate succinate S and mixtures thereof. Exemplary suitable ethylenically unsaturated polyisocyanates may include butylene diisocyanate and 1,3-butadiene -1,4-diisocyanate. Exemplary suitable alicyclic polyisocyanates include isophorone diisocyanate, cyclohexane diisocyanate, methylcyclohexane diisocyanate, bis(isocyanatomethyl)cyclohexane, bis(isocyanato ring) Hexyl) decane, bis(isocyanatocyclohexyl)_2,2-propane, bis(isocyanatocyclohexyl)·1,2-ethane, 2-isocyanatomethyl-3-(3) -isocyanatopropyl)-5-isocyanatodecyl-bicyclo[2.2.1]-heptane, 2-isocyanatomethyl-3-(3-isocyanatopropyl)- 6-Isocyanatomethyl-bicyclo[2.2.1]-heptane, 2-isocyanatomethyl-2-(3-isocyanatopropyl)-5-isocyanatodecyl- Bicyclo[2.2.1]-heptane, 2-isocyanatomethyl-2(3-isocyanatopropyl)-6-isocyanatomethyl-bicyclo[2.2.1]-heptane 2-isocyanatomethyl-3-(3-isocyanatopropyl)-6-(2-isocyanatoethyl)-bicyclo[2 2丨]-heptane, 2-isocyano Acid fluorenyl-2-(3-isocyanatopropyl)-5-(2-isocyanatoethyl)-bicyclo[2.2.1]-heptane, 2-isocyanatomethyl group 2_(3_isocyanatopropyl 153112.doc -14, 201130656 base)-6-(2-isocyanatoethyl)-bicyclo[m]-heptane Mixtures thereof. Exemplary aromatic polyisocyanates in which the isocyanate group is not directly bonded to the aromatic ring include bis(isocyanatoethyl)benzene, α,α,α',α'-tetramethylxylene diisocyanate, 1 , 3-bis(1-isocyanato-i.methylethyl)benzene 'bis(isocyanatobutyl)benzene, bis(isocyanatodecyl)naphthalene, bis(isocyanatosyl) Diphenyl ether, bis(isocyanatoethyl) phthalate, mesitylene triisocyanate, 2,5 _ (isocyanatomethyl) mixture. Illustrative suitable aromatic polyisocyanates having an isocyanate group bonded directly to the aromatic ring include a diisopropyl cyanide ester, an ethyl stearate diisocyanate, an isopropyl phenyl diisocyanate, a diisocyanate Dimethyl phenyl phenyl ester, diethyl phenyl diphenyl phthalate, diisopropyl phenyl diisocyanate, trimethyl benzene triisocyanate, benzene triisocyanate, naphthalene diisocyanate, decyl naphthalene diisocyanate Sour vinegar, biphenyl diisocyanate, o-toluidine diisocyanate, 4,4,-diphenylmethane diisocyanate, bis(3-methyl-4-isocyanatophenyl)decane, bis(isocyanocyanate) Acid phenyl)ethylene, 3,3'-dimethoxy-biphenyl-4,4,-diisocyanate, triphenylmethane triisocyanate 'polymerized 4,4,-diphenylnonane II Isocyanate, naphthalene triisocyanate, diphenylmethane-2,4,4,-triisocyanate, 4-methyldiphenylmethane_3,5,2,4,6'-pentaisocyanate, Phenyl ether diisocyanate, bis(isocyanatophenyl ether) ethylene glycol, bis(isocyanatophenyl ether)-1,3-propanediol, benzophenone diisocyanate, carbazole diisocyanate vinegar Ethylcarbazole diisocyanate, two gas carbazole diisocyanate and mixtures thereof. In some embodiments, the first resin comprising at least two isocyanate groups is selected from the group consisting of α,α'-diphenylene diisocyanate, α,α,α,,α|-tetradecyl xylene 153112.doc -15 · 201130656 Group of diisocyanate, isophorone diisocyanate, bis(isocyanatocyclohexyl)methane, toluene diisocyanate, 4,4·-diphenylmethane diisocyanate and mixtures thereof. In some embodiments, the first resin having at least two isocyanate groups may comprise an isocyanate functional polyurethane prepolymer. Isocyanate functional polyaminophthalate prepolymers can be prepared by a variety of conventional techniques. In some embodiments, at least one polyol (such as a diol) and at least one ionic acid-functional monomer (such as a diisocyanate monomer) can be reacted together to form a polyaminocarboxylic acid having at least two isocyanate groups. Ester prepolymer. Exemplary suitable isocyanate functional monomers include the aforementioned isocyanate functional monomers. Suitable isocyanate functional polyurethane prepolymers useful in the practice of this invention can have molecular weights that vary over a wide range. In some embodiments the 'isocyanate functional polyurethane prepolymer may have a number average molecular weight (Μη) of from 5〇〇 to 15,000 or from 500 to 5000, such as, for example, by using a polystyrene standard. Determined by analysis (GPC). Exemplary polyols useful in the preparation of isocyanate functional polyaminophthalate prepolymers include linear or branched alkane polyols such as 1,2, ethylene glycol, 1,3-propanediol, 1,2-propanediol. , i, 4-butanediol, 1,3-butanediol, glycerin, neopentyl glycol, trimethylolethane, trimethylolpropane, di-trihydroxydecylpropane, erythritol, Isopentanol and di-isopentaerythritol; poly-alkylene alcohols such as ethylene glycol, tri-ethylene glycol and tetra-ethylene glycol, and di-propylene glycol, tri-propylene glycol and tetra-propylene glycol; a cyclic polyhydric alcohol such as cyclopentanediol, cyclohexanediol, cyclohexanetriol, cyclohexanedimethanol, hydroxypropylcyclohexane 153112.doc •16-201130656 alcohol and cyclohexane diacetate; Aromatic polyols such as dihydroxybenzene, benzenetriol, hydroxy benzyl alcohol and dihydroxytoluene; bisphenols such as 4,4'-isopropylidenediol (bisphenol A); 4,4,-oxyl Bisphenol, 4,4,-dihydroxydibenzophenone, 4,4,-thiobision, phenolphthlalein, bis(4-phenylene) calcination (bisphenol F), 4,4 ,-(1,2·ethylenediyl)bisphenol and 4,4,-sulfonyl double Phenol; halogenated bisphenols such as 4,4,-isopropylidene bis(2,6-dibromophenol), 4,4,-isopropylidene bis(2,6-diphenol) and 4,4 '-Isopropyl bis(2,3,5,6-tetraqi); alkoxylated bisphenols, such as having one or more alkoxy groups (such as ethoxy, propoxy, alpha-) Alkoxylated 4,4'-isopropylidenes of butoxy and β-butoxy); and dicyclohexanol, which can be prepared by hydrogenation of the corresponding bisphenol, such as 4,4'- Isopropyl-bicyclohexanol, 4,4,-oxydicyclohexanol, 4,4,-thiobicyclohexanol and bis(4-hydroxycyclohexanol)decane. Other examples of suitable polyols useful in the preparation of isocyanate-functional polyaminophthalate prepolymers include high carbon number polyalkylene glycols, such as having a number average molecular weight (Μη) of from 2 to 2000 g/mole. Polyethylene glycol; an acrylic acid compound having a hydroxyl group, such as a copolymer of (mercapto) acrylate and a hydroxy functional (meth) acrylate, such as methacrylate and methyl methacrylate a hydroxyethyl acrylate copolymer; and a hydroxy-functional polyester such as those formed by the reaction of a diol such as butylene glycol with a diacid or a diester such as adipic acid or adipic acid monoethyl hydrazine. In some embodiments, the polyols useful in the practice of the invention may have a number average molecular weight (?n) of from 200 to 2000 grams per mole. In some implementations, you can make a heterogeneous 153IJ2.doc 201130656 ester function by reacting a di-isocyanoguanidine such as f $ diiso-acid vinegar with a polyalkylene glycol such as poly(tetrahydrofuran). Polyurethane prepolymer. In some embodiments, an isocyanate functional polyurethane prepolymer can be prepared in the presence of a catalyst. In some embodiments, a polyol and an isocyanate functional monomer are used. The amount of catalyst used may be less than 5% by weight, or less than 3% by weight, or less than 1% by weight, based on the total weight of the body. In some embodiments, exemplary suitable catalysts include stannous adducts of organic acids. , such as stannous octoate, dibutyltin dilaurate, dibutyltin diacetate, dibutyltin thiolate, dibutyltin dimaleate, dimethyltin diacetate, dinonyltin dilaurate, 1,4- Diazodicyclo[2.2.2]octane and mixtures thereof. In other embodiments, the catalyst may be zinc octoate, hydrazine or iron acetylacetonate. Other exemplary suitable catalysts include tertiary amines such as triethyl ethane. Amine, triisopropylamine and N,N-didecyl Amine. In some embodiments 'for a polyamine phthalic acid S that can be used to make polymer particles, the first resin having at least two isocyanate groups comprises at least two blocked isocyanate groups. Blocked isocyanate compound. The term blocked isocyanate compound refers to a terminal and/or pendant blocked isocyanate group which is convertible to a deblocked (ie free) isocyanate group and which separates or releases the capping group. Monomer or prepolymer. Any of the foregoing examples of suitable isocyanate compounds. Exemplary non-short-acting capping groups that can be blocked with blocked isocyanates include 1H-sitting, such as 1H-imidazole, 1H-indole ratio beta, 3,5-dimethyl -1Η·pyrazole, 1Η-1,2,3-triazole, 1Η-1,2,3-benzotriazole, 1Η·1,2,4-triazole, 1Η-5-mercapto_1, 2,4-triazole and 1Η-3-aminol_1,2,4_2°, internal amine, such as e_caprolactam and ketone; morphine, such as 3-aminopropylmorpholine; And the hydroxy group is stupid diimine. Blocked isocyanic acid 1531I2.doc • 18· 201130656 Exemplary short-acting blocking groups for vinegar compounds include alcohols such as propanol, isopropanol, butanol, isobutanol, tert-butanol and hexanol; An alkylene glycol monoalkyl group, such as ethylene glycol monoalkyl ethers (such as ethylene glycol monobutyl ether and ethylene hexyl hexyl ether) and propylene glycol monoalkyl ether (such as propylene glycol monomethyl ether); Ketone oxime, such as methyl ethyl ketone oxime. Without wishing to be bound by any theory, it is believed that the inclusion of a blocked isocyanate material in a first resin having at least two isocyanate groups can result in the formation of a covalent bond at: (a) in the particulate polyaminophthalate particles Between at least a portion thereof; and/or (b) between at least a portion of the particulate polyurethane and at least a portion of the interconnected network structure. In some embodiments, the blocked isocyanate compound is present in an amount such that the amount of the first resin blocked isocyanate group is at least 5 mole percent, or at least 10 moles, based on the total moles of free isocyanate and blocked isocyanate groups. %, or less than 4 〇 mol %, or less than 5 〇 mol % 0 The second resin having at least two groups reactive with isocyanate groups may be selected from a variety of materials. In some embodiments, the second resin has a functional group selected from the group consisting of a hydroxyl group, a sulfhydryl group, a primary amine, a secondary amine, and combinations thereof. An exemplary suitable second resin comprises the aforementioned polyol. In some embodiments, the second resin, which may have at least two groups reactive with isocyanate groups, comprises a polyamine. Exemplary polyamines include ethylamine, such as ethylenediamine (EDA), diethylidene triamine (DETA), tri-ethyltetramine (TETA), tetraethylamamine (TEPA), and pentaethylene Hexaamine (PEHA), piperazine, diethylenediamine (DEDA) a2_amine small ethyl piperazine. Other exemplary suitable polyamines include one or more of the dialkylmethylamines 153112.doc •19·201130656 isomers such as 3,5-dimethyl-2,4-toluenediamine, 3,5 - dimethyl-2,6-toluenediamine, 3,5-diethyl-2,4-toluenediamine, 3,5-diethyl-2,6-nonylphenylenediamine, 3,5· Diisopropyl-2,4-toluenediamine, 3,5-diisopropyl-2,6-nonylphenylenediamine, and mixtures thereof. In some embodiments, the polyamine can be selected from the group consisting of methylene diphenylamine, propylene glycol bis(p-aminobenzoate), and amine terminated oligomers and prepolymers. In some embodiments, a suitable polyamine can be selected from the group consisting of 4,4'-methylene-bis(dialkylaniline) (eg, 4,4--indenylene-bis(2,6-dimethyl) Aniline), 4,4,-decylene-bis(2,6-diethylaniline), 4,4'-methylene-bis(2-ethyl-6-mercaptoaniline), 4,4 '-Amidino-bis(2,6-diisopropylaniline), 4,4'-methylene-bis(2-isopropyl-6-mercaptoaniline), 4,4·-Aa Polyamines of bis-bis(2,6-diethyl-3-haloaniline) and mixtures thereof. In some embodiments, the particulate polyurethane may be prepared from a first resin comprising at least two isocyanate groups and a second resin comprising at least two groups reactive with isocyanate in the presence of a catalyst. Suitable catalysts include those listed above for the preparation of isocyanate functional polyurethane prepolymers. In some embodiments, the isocyanate group and, optionally, the blocked isocyanate group have a molar equivalent ratio of from 0.5: 1.0 to 1.5: 1.0, such as oxime, for isocyanate-reactive groups useful in the preparation of particulate polyaminophthalic acid esters. • 7:1. 〇 to 1.3:1.0 or 0.8:1.0 to 1,2:1.0. In some embodiments, the crosslinked polyaminophthalic acid ester can be prepared by using a second resin that is less than the stoichiometrically required amount such that the amine phthalate or urea linkage will react with the remaining isocyanate. In other embodiments, partial substitution of a difunctional compound with a trifunctional compound 153112.doc -20·201130656 will result in a more thermally stable chemical crosslink. Some useful particulate polyurethanes are commercially available, for example, from Dainichiseika Color & Chemicals Mfg. Co., Ltd. Advanced Polymer Group (Tokyo, Japan) under the trade name "DAIMIC-BEAZ", grade "UCN-5350D". "UCN-5150D" and "UCN-5070D"; Polyurethane S particles can be purchased from Negami Chemical Industrial Co., Ltd. (Nomi-city, Japan) under the trade name "ART PEARL"; Thermoplastic polyamino phthalates of aliphatic polyethers are available, for example, from Bayer
Corporation以商品名「ΤΕΧΙΝ」購得。 在一些實施例中,可用於實施本發明之適合的聚合物顆 粒包括微粒聚環氧化物。微粒聚環氧化物可例如自具有至 少兩個環氧基之第一樹脂及具有至少兩個可與環氧化物之 環氧基反應之基團的第二樹脂製備。 在一些實施例中,包含至少兩個環氧基之第一樹脂可與 第二樹脂混合在一起且經聚合或固化以形成塊體聚環氧化 物接著可將該塊體聚環氧化物研磨(例如低溫研磨)或視 情況分類。在一些實施例中,微粒聚環氧化物可藉由將環 氧化物g旎性及氫官能性材料混合在一起,緩慢地將混合 物澆注至攪拌下的經加熱之去離子水中,分離所形成之微 粒材料(例如藉由過濾),乾燥經分離之微粒材料,及視情 況分類經乾燥之微粒聚環氧化物而形成。 一些實施例中,可用於實施本發明之適合的環氧化物 线性材料包括環氧化物官能性單ϋ、環氧化物官能性預 聚物及其組合。例示性之適合的環氧化物官能性單體可包 153112.doc •21 - 201130656 括脂族聚環氧化物,諸如⑽·二環氧基丁烷、 二環氧基辛烷;環脂族聚環氧化物,諸如U,4,5-二環氧 基環己垸、1,2,5,6·二環氧基環辛烧、7_氧雜_二環[4 庚统-3·甲酸7-氧雜·二環[41〇]庚_3_基甲酿、1>2-環氧 基_4·環氧乙基·環己统及23(環氧基丙基)環己烧;芳族聚 環氧化物,諸如雙(4_經基苯基)甲烧二縮水甘油驗;氣化 雙紛A二環氧化物;及其混合物。可用於本發明之環氧化 物官能性單體通常係由多元醇與表齒代醇(例如表氣醇)之 反應製備。可用以製備環氧化物官能性單體之多元醇包括 本文中關於製備異氰旨官能性預聚物先前所述者。環氧 化物官能性單體之-適用種類包括由雙盼與表氣醇之反應 所製備者(例如4,亞異丙基二酚與表氣醇之反應以形^ 4,4'-亞異丙基二酚二縮水甘油醚)。 在一些實施例中,可用於製備特定環氧化物之環氧化物 官能性預聚物可藉由使聚合多元醇與表氣醇反應來製備。 例示性之適合的聚合多元醇可包括聚伸烷二醇,諸如聚乙 二醇及聚四氫呋喃;聚酯多元醇;聚胺基甲酸酯多元醇; 聚((甲基)丙烯酸酯)多元醇;及其混合物。 在本發明之一些實施例中,環氧化物官能性預聚物可包 括環氧化物官能性聚((甲基)丙烯酸酯)聚合物,其可由(曱 基)丙烯酸酯單體及環氧化物官能性可自由基聚合單體(例 如縮水甘油基(甲基)丙烯酸酯)製備,適合之環氧化物官能 性預聚物可具有寬範圍之分子量。在一些實施例中,環氧 化物官能性預聚物之分子量可為500至15,〇〇〇公克/莫耳, 153112.doc -22- 201130656 或500至5000公克/莫耳,如例如藉由使用聚笨乙烯標準之 透膠層析術(GPC)所測定。 具有至少兩個可與環氧化物反應之基團的第二樹脂可包 3經基、疏基、缓酸、一級胺或二級胺中之至少一者。在 一些實施例中,第二樹脂可包括本文中先前所述之多元 醇。在其他實施例中,第二樹脂可包括本文中先前所述之 多元胺。在一些實施例中,適合之多元胺可包括具有至少 兩個選自一級胺、二級胺及其組合之胺基的聚醯胺預聚 物。適合之例示性聚醯胺預聚物可包括可自例如c〇gnis Corporation, Coating & Inks Division(Monheim, Germany) 以商品名「versamid」購得者。 在一些實施例中,可在催化劑存在下由包含至少兩個環 氧基之第一樹脂及包含至少兩個可與環氧化物反應之基團 的第二樹脂來製備微粒環氧化物。例示性之適合催化劑包 括三級胺,諸如三乙胺、三異丙胺、三第三丁胺、四氣观 酸及N’N-二甲基苄胺。在一些實施例中,可在第二樹脂盥 環氧化物官能性材料組合之前將催化劑併入至第二樹脂 中。在-些實施例中’以經組合之第一及第二樹脂的心 量計,所使用之催化劑的量可小於5重量%,或小於3重 % ’或小於1重量%。 用以製備微粒交聯聚環氧化物之反應物之環氧基 化物反應性基團的莫耳當量比通常為〇 5:1 〇至211 〇衣你 如 0.7:1.0至 1.3:1 _〇或 〇.8:1.0至 1.2:1.0。 例 在一些實施例中 ’具有至少兩個異氰酸酯基或 至少兩個 153112.doc -23- 201130656 環氧基之第一樹脂及/或第二樹脂可視情況包含已知的習 知添加劑。該等添加劑之實例包括熱穩定劑、抗氧化劑、 脫模劑、靜態染料、顏料、增韌添加劑(諸如環氧基化之 苯甲酸苯酯及聚(伸烷二醇)二苯甲酸酯)及界面活性劑(諸 如環氧乙烷/環氧丙烷嵌段共聚界面活性劑)。在一些實施 例中,以經組合之第一及第二樹脂的總重量計,該等添加 劑的含量可總計至多10重量%、或至多5重量%、或至多3 重量%。 可用於實施本發明之其他聚合物顆粒包括熱塑性聚(甲 基)丙烯酸酯,其可自例如R0HM America,Inc〇rp〇ratedCorporation is commercially available under the trade name "ΤΕΧΙΝ". In some embodiments, suitable polymeric particles useful in the practice of the invention include particulate polyepoxides. The particulate polyepoxide can be prepared, for example, from a first resin having at least two epoxy groups and a second resin having at least two groups reactive with the epoxy group of the epoxide. In some embodiments, the first resin comprising at least two epoxy groups can be mixed with the second resin and polymerized or cured to form a bulk polyepoxide and then the block polyepoxide can be ground ( For example, low temperature grinding) or as appropriate. In some embodiments, the particulate polyepoxide can be formed by slowly mixing the epoxide together with the hydrogen functional material and slowly pouring the mixture into heated deionized water under agitation. The particulate material (e.g., by filtration), the dried particulate material is dried, and the dried particulate polyepoxide is optionally classified. Suitable epoxide linear materials useful in the practice of this invention in some embodiments include epoxide functional monoterpenes, epoxide functional prepolymers, and combinations thereof. Exemplary suitable epoxide functional monomers may be included in 153112.doc • 21 - 201130656 including aliphatic polyepoxides such as (10) dicyclooxybutane, dicyclooxyoctane; cycloaliphatic poly Epoxides such as U,4,5-dicyclooxycyclohexanium, 1,2,5,6-dicyclooxycyclooctane, 7-oxa-bicyclo[4 Geng-3-carboxylic acid 7-oxabicyclo[41〇]glycol-3-ylyl, 1>2-epoxy-4·epoxyethyl·cyclohexene and 23(epoxypropyl)cyclohexane; An aromatic polyepoxide, such as bis(4-diphenyl)methane diglycidyl; gasified bis-A epoxide; and mixtures thereof. The epoxide functional monomers useful in the present invention are typically prepared by the reaction of a polyol with an epidentate alcohol such as a surface alcohol. Polyols which may be used to prepare the epoxide functional monomer include those previously described herein for the preparation of the isocyanate functional prepolymer. Suitable types of epoxide functional monomers include those prepared by the reaction of double expectant with epigas alcohol (for example, the reaction of 4, isopropylidenediol and epigas alcohol to form 4,4'-sub-different Propyl diol diglycidyl ether). In some embodiments, epoxide functional prepolymers useful in the preparation of particular epoxides can be prepared by reacting a polymeric polyol with a surface gas alcohol. Exemplary suitable polymeric polyols may include polyalkylene glycols such as polyethylene glycol and polytetrahydrofuran; polyester polyols; polyurethane polyols; poly((meth)acrylate) polyols ; and mixtures thereof. In some embodiments of the invention, the epoxide functional prepolymer may comprise an epoxide functional poly((meth) acrylate) polymer which may be derived from (mercapto) acrylate monomers and epoxides Prepared from a functional free-radically polymerizable monomer such as glycidyl (meth) acrylate, suitable epoxide functional prepolymers can have a wide range of molecular weights. In some embodiments, the epoxide functional prepolymer may have a molecular weight of from 500 to 15, in grams per mole, 153112.doc -22 to 201130656 or from 500 to 5000 grams per mole, as by, for example, It was determined using a polystyrene standard for gel permeation chromatography (GPC). The second resin having at least two groups reactive with the epoxide may comprise at least one of a benzyl group, a sulfhydryl group, a slow acid, a primary amine or a secondary amine. In some embodiments, the second resin can include the polyols previously described herein. In other embodiments, the second resin can include a polyamine as previously described herein. In some embodiments, suitable polyamines can include polyamido prepolymers having at least two amine groups selected from the group consisting of primary amines, secondary amines, and combinations thereof. Suitable exemplary polyamido prepolymers can be obtained, for example, from c〇gnis Corporation, Coating & Inks Division (Monheim, Germany) under the trade name "versamid". In some embodiments, the particulate epoxide can be prepared from a first resin comprising at least two epoxy groups and a second resin comprising at least two groups reactive with the epoxide in the presence of a catalyst. Exemplary suitable catalysts include tertiary amines such as triethylamine, triisopropylamine, tri-tert-butylamine, tetra-glycolic acid, and N'N-dimethylbenzylamine. In some embodiments, the catalyst can be incorporated into the second resin prior to combining the second resin oxime epoxide functional material. In some embodiments, the amount of catalyst used may be less than 5% by weight, or less than 3% by weight or less than 1% by weight, based on the combined weight of the first and second resins. The molar equivalent ratio of the epoxide-reactive group of the reactant used to prepare the particulate cross-linked polyepoxide is usually from 〇5:1 〇 to 211 你, such as 0.7:1.0 to 1.3:1 〇 or 〇.8:1.0 to 1.2:1.0. EXAMPLES In some embodiments, the first resin and/or the second resin having at least two isocyanate groups or at least two 153112.doc -23-201130656 epoxy groups may optionally contain known conventional additives. Examples of such additives include heat stabilizers, antioxidants, mold release agents, static dyes, pigments, toughening additives (such as epoxidized phenyl benzoate and poly(alkylene glycol) dibenzoate) And a surfactant (such as an ethylene oxide / propylene oxide block copolymerization surfactant). In some embodiments, the levels of the additives may add up to 10% by weight, or up to 5% by weight, or up to 3% by weight, based on the total weight of the combined first and second resins. Other polymer particles useful in the practice of this invention include thermoplastic poly(meth)acrylates which are available, for example, from R0HM America, Inc.
(LawrenceVille,Ge〇rgia)以商品名「R〇HAD〇N」購得及自 Negami Chemical Industrial C〇.,Ud 以商品名「ART PEARL」購得。可用於實施本發明之其他聚合物顆粒包括 纖維素顆粒’其可自例如D0wChemiealC()mpany(Midland>(Lawrence Ville, Ge〇rgia) is commercially available under the trade name "R〇HAD〇N" and from Negami Chemical Industrial C., Ud under the trade name "ART PEARL". Other polymer particles useful in the practice of the invention include cellulose particles' which may be, for example, from D0w Chemieal C() mpany (Midland>
Michigan)以商品名「METHOCEL」購得。 本發明之拋光墊中之聚合物顆粒含量可變化。有趣的 是,吾人發現,在一些實施例中,使用特定技術混合之聚 合物顆粒的量以意外方式影響所得拋光層之孔隙率。舉例 而言,當使用組合旋轉與轉動之攪拌機時,吾人發現,至 多20重量%之顆粒含量比至多15重量%之顆粒含量提供較 )孔然而,其他混合技術可提供不同結果。在一些實施 例中,以微粒聚合物及交聯網狀結構之總重量計,聚合物 顆粒之含量為至少1重量%、或至少2 5重量%、或至少5重 量/(|。在一些貫施例中,以聚合物顆粒及交聯網狀結構之 153112.doc -24- 201130656 總重量計,聚合物顆粒之含量可為至多25重量%、或至多 2〇重量。/。、或小於2〇重量%。 在些貫施例(包括聚合物顆粒為纖維之實施例)中,以 ^合物顆粒及交聯網狀結構之總重量計,聚合物顆粒之含 量可為至多10重量%、或至多5重量%、或小於5重量%。 有利的是,以聚合物顆粒及交聯網狀結構之總重量計,呈 纖維形式的聚合物顆粒即使在至多2重量%之含量下仍可 提供適用程度之孔隙率。在此等實施例中之一些中,聚合 物顆粒為水溶性纖維(例如曱基纖維素纖維)。如實例中之 表1及表2中所展示,用曱基纖維素纖維獲得的孔隙率程度 高於用a ti:計等量 <球體聚胺&甲酸醋顆粒獲得的孔隙 率程度。圖8(其為實例12之固化組合物之剖視圖的顯微圖) 與圖7A及圖7B(其分別為實例15之固化組合物之剖視圖及 俯視圖的顯微圖)之間的視覺比較展示,用2重量%之纖維 (圖8)獲得的孔隙率程度與用1〇重量。/。之顆粒(圖7a及圖7B) 獲得的孔隙率程度大約相同。 併入較低含量之顆粒以獲得相同孔隙率可有利於例如改 良顆粒在交聯網狀結構中之分佈均一性及在拋光期間維持 墊表面上之硬度.。 本發明之拋光墊包含拋光層,其包含聚合物顆粒及交聯 網狀結構’該交聯網狀結構包含熱固化組分及輻射固化組 分。多種適合聚合物可用於形成交聯網狀結構。在一些實 施例中’熱固化組分包含聚胺基曱酸酯、聚環氧化物或經 胺基甲酸3曰改質之聚環氧化物十之至少一者。 153112.doc •25· 201130656 本發明之交聯網狀結構通常在聚合物顆粒存 固 在:=實施例中,當可熱固化之樹脂組合物及可輻射固化 之樹脂組合物處於存在聚合物顆粒之情況下時,誃等。 化組合物可反應形成交聯網狀結構。 Λ 在-些實施例中,以聚合物顆粒及交聯網狀結構之總重 量計,本文中所揭示之拋光層可包含至少75重量%、或至 少80重量%、或至少85重量%的交聯網狀結構。在一些二 施例中,以聚合物顆粒及交聯網狀結構之總重量計,交聯 網狀結構可以至多99重量%、或至多95重量%、或至多9〇 重量°/〇的量存在於拋光層中。 可藉由習知聚合技術方法來製備交聯網狀結構。在一些 實施例中,交聯網狀結構可藉由縮合反應、自由基引發^ 應或其組合而形成。在一些實施例中,熱固化組分可包含 藉由包含聚胺基甲酸醋預聚物之可熱固化樹脂組合物與多 元胺之縮合而形成的聚胺基甲酸酯。在一些實施例中,幸备 射固化組分可包含藉由胺基曱酸酯·二丙烯酸酯或胺基甲 酸醋-二曱基丙烯酸酯在光引發劑存在下聚合而形成的胺 基甲酸酯-聚丙稀酸酯或胺基曱酸醋·聚甲基丙婦酸醋。在 一些實施例中,交聯網狀結構為藉由逐步或同時熱固化及 輻射固化聚合而形成之互穿聚合物網狀結構。在一些實施 例中’輻射固化組分(在一些實施例中為聚丙烯酸酯或聚 甲基丙烯酸酯)例如經由胺基甲酸酯或脲鍵聯基團共價鍵 結於熱固化組分。 可用於實施本發明之適合的可熱固化樹脂組合物可包括 153112.doc -26· 201130656 單體、預聚物及其混合物。在一些實施例中,可熱固化樹 脂組合物可含有催化劑、交聯劑、固化劑、溶劑及此項技 術中已知之其他習知添加劑。 在一些實施例中,可熱固化樹脂組合物包含具有至少兩 個異氰酸酯基(其亦可為封端異氰酸酯基)或至少兩個環氧 基之第一樹脂;及具有至少兩個可與異氰酸酯及/或環氧 化物反應之基團(例如羥基、胺基、羧基或毓基)的第二樹 脂。 可用以製備熱固化組分的例示性之適合的第一及第二樹 月曰~τ選自本文中先前關於微粒聚胺基甲酸酉旨分別描述之異 氰酸酯(包括預聚物)、封端異氰酸酯、多元醇及多元胺。 當組合第一及第二樹脂時,使用封端異氰酸酯可例如延遲 膠凝之起始,從而可允許用於混合第一及第二樹脂與聚合 物顆粒的時間較長。 可用作第一樹脂之一些異氰酸酯預聚物為市售的,例如 可自 Air Products and Chemicals,Inc.(Allentown,PA)以商 品名「AIRTHANE PHP-75D」購得的異氰酸酯預聚物。可 用作第二樹脂之一些二胺為市售的,例如可自AirMichigan) is available under the trade name "METHOCEL". The amount of polymer particles in the polishing pad of the present invention can vary. Interestingly, it has been found that, in some embodiments, the amount of polymer particles mixed using a particular technique affects the porosity of the resulting polishing layer in an unexpected manner. For example, when using a combination of rotating and rotating mixers, we have found that a particle content of up to 20% by weight provides a pore size compared to a particle content of up to 15% by weight. However, other mixing techniques can provide different results. In some embodiments, the polymer particles are present in an amount of at least 1% by weight, or at least 25% by weight, or at least 5% by weight based on the total weight of the particulate polymer and the crosslinked network structure. In one example, the polymer particles may be present in an amount of up to 25% by weight, or up to 2% by weight, based on the total weight of the polymer particles and the crosslinked network structure of 153112.doc -24 to 201130656. In some embodiments (including embodiments in which the polymer particles are fibers), the polymer particles may be present in an amount of up to 10% by weight, or up to 5, based on the total weight of the granules and the crosslinked network structure. % by weight, or less than 5% by weight. Advantageously, the polymer particles in the form of fibers provide a suitable degree of porosity even at a content of up to 2% by weight, based on the total weight of the polymer particles and the crosslinked network structure. In some of these embodiments, the polymer particles are water soluble fibers (e.g., fluorenyl cellulose fibers). The pores obtained with fluorenyl cellulose fibers are as shown in Tables 1 and 2 of the Examples. The rate is higher than a ti: the degree of porosity obtained by equalizing <spherical polyamine & vinegar granules. Figure 8 (which is a micrograph of a cross-sectional view of the cured composition of Example 12) and Figures 7A and 7B (which are respectively A visual comparison between the cross-sectional view of the cured composition of Example 15 and the micrograph of the top view shows that the degree of porosity obtained with 2% by weight of the fiber (Fig. 8) is comparable to the particle weight of 1 ( (Fig. 7a). And the degree of porosity obtained is about the same as in Figure 7B. Incorporating lower levels of particles to obtain the same porosity can be advantageous, for example, to improve the uniformity of distribution of the particles in the crosslinked network structure and to maintain the hardness of the mat surface during polishing. The polishing pad of the present invention comprises a polishing layer comprising polymer particles and a crosslinked network structure. The crosslinked network structure comprises a heat curing component and a radiation curing component. A plurality of suitable polymers can be used to form a crosslinked network structure. In some embodiments, the 'thermosetting component comprises at least one of a polyamino phthalate, a polyepoxide, or a polyepoxide modified with ruthenium carbazate. 153112.doc •25· 201130656 Ben Crosslinking of invention The structure is usually deposited in the polymer particles: in the embodiment, when the heat curable resin composition and the radiation curable resin composition are in the presence of the polymer particles, the composition is reactive. Forming a cross-linked network structure. In some embodiments, the polishing layer disclosed herein may comprise at least 75% by weight, or at least 80% by weight, or at least, based on the total weight of the polymer particles and the cross-linked network structure. 85 wt% of the cross-linked network structure. In some of the two embodiments, the cross-linked network structure may be up to 99% by weight, or at most 95% by weight, or at most 9 以 based on the total weight of the polymer particles and the cross-linked network structure. An amount of weight ° / 〇 is present in the polishing layer. The crosslinked network structure can be prepared by a conventional polymerization technique. In some embodiments, the crosslinked network structure can be formed by a condensation reaction, a free radical initiator, or a combination thereof. In some embodiments, the heat curing component may comprise a polyurethane formed by condensation of a heat curable resin composition comprising a polyurethane urethane prepolymer with a polyamine. In some embodiments, the foreshing curing component may comprise an aminocarboxylic acid formed by polymerization of an amino phthalate diacrylate or urethane bis- decyl acrylate in the presence of a photoinitiator. Ester-polyacrylate or amino phthalic acid vinegar polymethyl acetonate. In some embodiments, the cross-linked network structure is an interpenetrating polymer network formed by progressive or simultaneous thermal curing and radiation curing polymerization. In some embodiments, the radiation curable component (in some embodiments, a polyacrylate or polymethacrylate) is covalently bonded to the thermally curable component, for example, via a urethane or urea linkage group. Suitable heat curable resin compositions useful in the practice of the present invention may include 153112.doc -26· 201130656 monomers, prepolymers, and mixtures thereof. In some embodiments, the heat curable resin composition can contain a catalyst, a crosslinking agent, a curing agent, a solvent, and other conventional additives known in the art. In some embodiments, the heat curable resin composition comprises a first resin having at least two isocyanate groups (which may also be blocked isocyanate groups) or at least two epoxy groups; and having at least two isocyanates and a second resin of a group reactive with an epoxide (for example, a hydroxyl group, an amine group, a carboxyl group or a thiol group). Exemplary suitable first and second dendrimers to tau that may be used to prepare the thermally curable component are selected from the isocyanates (including prepolymers), blocked isocyanates previously described herein with respect to the microparticulate polycarbazide. , polyols and polyamines. When the first and second resins are combined, the use of a blocked isocyanate can, for example, delay the onset of gelation, thereby allowing for a longer period of time for mixing the first and second resins with the polymer particles. Some isocyanate prepolymers which can be used as the first resin are commercially available, for example, from the isocyanate prepolymer available from Air Products and Chemicals, Inc. (Allentown, PA) under the trade designation "AIRTHANE PHP-75D". Some diamines that can be used as the second resin are commercially available, for example, from the Air.
Products and Chemicals,Inc.以商品名「veRSALINK P250」及「VERSALINKP650」購得的寡聚二胺。 在一些實施例令,包含可輻射固化樹脂及可熱固化樹脂 (该可熱固化樹脂包含具有至少兩個異氰酸酯基之第一樹 脂及具有至少兩個可與異氰酸酯基反應之基團的第二樹 脂)的組合物可進一步包含催化劑。例示性之適合催化劑 153112.doc -27- 201130656 可包括本文中先前關於製備微粒聚胺基曱酸酯所述者(例 如,諸如三乙胺之三級胺及諸如二月桂酸二丁基錫之有機 金屬化合物)。在一些實施例中,可在組合第一及第二樹 脂之前將催化劑併入至第二樹脂中。在一些實施例中,以 經組合之第一及第二樹脂的總重量計,催化劑的含量可小 於5重量%、或小於3重量%、或小於i重量%。第一及第二 樹脂中的異氰酸酯基及視情況選用之封端異氰酸酯基對異 氰酸酯反應性基團的莫耳當量比分別可為〇 5:1〇至 2·〇:1·0、或0.7:1.0至 1.3:1.0、或〇 8:1〇至12:1 〇。 在一些實施例中,熱固化組分可藉由使具有至少兩個環 氧基之第一樹脂與具有至少兩個可與環氧基反應之基團 (例如羥基、胺基、羧基或毓基)的第二樹脂反應來製備。 例示性之適合的具有至少兩個環氧基之第一樹脂及第二樹 月曰包括如本文中先前所論述的用以製備微粒聚環氧化物之 彼等環氧化物 '多元胺及多元醇中之任一者。 在一些實施例中,包含可輻射固化樹脂及可熱固化樹脂 (該可熱固化樹脂包含用卩製備聚環氧化物熱固化組分之 第一及第二樹脂)之組合物可進一步包含環氧化物開環催 化劑。用於環氧化物開環的例示性之適合催化劑包括任何 以上所描述者(例諸如三第三丁胺之三級胺及四氟硼 酸)。在-些實施例中’可在混合第一及第二樹脂之前將 催化劑添加至第:樹H些實施例中,以第—及第二 樹脂之總重量計’環氧化物開環催化劑的含量可小於5重 量/❶或小於3重量%或i重量%。第一及第二樹脂中的環 153112.doc •28· 201130656 氧基對環氧化物反應性錢之莫耳#量比分別可為〇5ι 〇 至mo、或或〇8:1 〇至i 2:ι 〇。 在-些實施财’可熱固化樹脂可包含習知添加劑。例 . 雜之適合的習知添加劑包括如本文中先前關於製備微粒 .¾胺基甲酸酿及微粒聚環氧化物所描述的彼等添加劑中之 任-者,諸如脫模劑、染料及增勒劑。在一些實施例中, 以交聯網狀結構之總重量計,添加劑的含量可為總計小於 10重量%、或小於5重量%、或小於3重量%。可將習知添 加劑添加至例如第一或第二樹脂。 本發明之多孔拋光墊包含具有輻射固化組分之拋光層。 輻射固化組分包含聚丙烯酸酯、聚曱基丙烯酸酯、聚(乙 烯醚)、聚乙烯或聚環氧化物中之至少一者。在一些實施 例中,輻射固化組分包含聚丙烯酸酯或聚甲基丙烯酸酯中 之至 >、一者。輻射固化組分可由包含至少兩個丙烯酸酯 基、曱基丙烯酸酯基、乙烯基(例如乙烯基、烯丙基或苯 乙烯基)或環氧基的可輻射固化樹脂製備。在一些實施例 中’可輻射固化樹脂包含至少兩個丙烯酸酯基或甲基丙烯 酸S旨基。 在一些實施例中’可輻射固化樹脂可包含具有至少兩個 經(曱基)丙烯酸酯改質之異氰酸酯基的經(曱基)丙烯酸酯 改質之聚官能性異氰酸酯材料,其可為例如具有末端及/ 或側位異氰酸酯基之聚胺基甲酸酯預聚物(例如以上結合 製備微粒聚胺基曱酸酯所描述的彼等聚胺基曱酸酯預聚 物)與具有異氰酸酯反應性官能基(例如羥基、胺基或酼基) 153112.doc -29- 201130656 之(甲基)丙烯酸酯的反應產物。 例示性之適合的羥基或胺基官能性(甲基)丙烯酸酯包括 羥基烷基丙烯酸酯及甲基丙烯酸酯(例如2-羥基乙基丙烯酸 酯(HEA)、2-羥基乙基曱基丙烯酸酯(HEMA)、2-羥基丙基 丙烯酸酯、3-羥基丙基丙烯酸酯(ΗΡΑ)、2-羥基丙基曱基 丙烯酸酯、3-羥基丙基甲基丙烯酸酯、1,3-二羥丙基丙烯 酸酯、2,3-二羥丙基丙烯酸酯及曱基丙烯酸酯、2-羥基乙 基丙烯醯胺及甲基丙烯醯胺、2-羥基丁基(甲基)丙烯酸 酯、4-羥基丁基(曱基)丙烯酸酯、2-羥基-3-苯氧基丙基(甲 基)丙烯酸酯、1,4-丁二醇單(曱基)丙烯酸酯、2-羥基烷基 (曱基)丙烯醯基磷酸酯、4-羥基環己基(曱基)丙烯酸酯、 1,6-己二醇單(甲基)丙烯酸酯、新戊二醇單(曱基)丙烯酸 酯、三羥甲基丙烷二(甲基)丙烯酸酯、三羥曱基乙烷二(曱 基)丙烯酸酯、異戊四醇三(曱基)丙烯酸酯、二異戊四醇五 (曱基)丙烯酸酯;Ν-烷基-Ν-羥基乙基丙烯醯胺及甲基丙烯 醯胺、羥基乙基-β羧基乙基丙烯酸酯、羥基己基丙烯酸 酯、羥基辛基甲基丙烯酸酯、聚丙二醇單甲基丙烯酸酯、 丙二醇單甲基丙烯酸酯、己内酯丙烯酸酯、第三丁基胺基 乙基甲基丙烯酸酯及其混合物。其中許多可自商業來源購 得,例如適用之羥基乙基丙烯酸酯及羥基丙基丙烯酸酯可 購自 Dow Chemical (Mid land, Mich)及 Osaka Organic Chemical Industry Ltd.(Osaka, Japan)。適用之經基丁基丙 稀酸醋可購自 Osaka Organic Chemical Industry Ltd.。適用 之經基聚醋丙烯酸酷可自Dow Chemical Company以商品名 153112.doc -30- 201130656 「TONE MONOMER M-100」購得及自 〇saka 〇rganicProducts and Chemicals, Inc. Oligomer diamines available under the trade names "veRSALINK P250" and "VERSALINKP650". In some embodiments, a radiation curable resin and a heat curable resin comprising a first resin having at least two isocyanate groups and a second resin having at least two groups reactive with isocyanate groups are included The composition may further comprise a catalyst. Exemplary suitable catalysts 153112.doc -27- 201130656 may include those previously described herein for the preparation of particulate polyamino phthalates (eg, tertiary amines such as triethylamine and organometallics such as dibutyltin dilaurate) Compound). In some embodiments, the catalyst can be incorporated into the second resin prior to combining the first and second resins. In some embodiments, the amount of catalyst may be less than 5% by weight, or less than 3% by weight, or less than i% by weight, based on the total weight of the combined first and second resins. The molar equivalent ratio of the isocyanate group in the first and second resins and, optionally, the blocked isocyanate group to the isocyanate-reactive group may be 〇5:1〇 to 2·〇:1·0, or 0.7: 1.0 to 1.3:1.0, or 〇8:1 〇 to 12:1 〇. In some embodiments, the thermally curable component can be obtained by reacting a first resin having at least two epoxy groups with at least two groups reactive with an epoxy group (eg, a hydroxyl group, an amine group, a carboxyl group, or a sulfhydryl group) The second resin is reacted to prepare. An exemplary suitable first resin having at least two epoxy groups and a second tree comprising epoxides and polyhydric alcohols as described herein previously for the preparation of particulate polyepoxides Any of them. In some embodiments, the composition comprising a radiation curable resin and a heat curable resin comprising a first and a second resin for preparing a polyepoxide thermosetting component with cerium may further comprise an epoxy Compound ring-opening catalyst. Exemplary suitable catalysts for epoxide ring opening include any of those described above (e.g., tertiary amines such as tri-tert-butylamine and tetrafluoroboric acid). In some embodiments, the catalyst may be added to the first: and second resin prior to mixing the first and second resins. In some embodiments, the amount of the epoxide ring-opening catalyst is based on the total weight of the first and second resins. It may be less than 5 wt/❶ or less than 3% by weight or i wt%. Rings in the first and second resins 153112.doc •28· 201130656 Oxygen to epoxide reactivity Qianmo Mo ## The ratio can be 〇5ι 〇 to mo, or 〇8:1 〇 to i 2 : ι 〇. The heat curable resin may contain conventional additives. Examples of suitable conventional additives include any of the additives previously described herein for the preparation of microparticles. 3⁄4 aminocarboxylic acid brewing and particulate polyepoxides, such as mold release agents, dyes, and Zeng Le Agent. In some embodiments, the additive may be present in an amount of less than 10% by weight, or less than 5% by weight, or less than 3% by weight, based on the total weight of the crosslinked network structure. A conventional additive may be added to, for example, the first or second resin. The porous polishing pad of the present invention comprises a polishing layer having a radiation curable component. The radiation curable component comprises at least one of polyacrylate, polydecyl acrylate, poly(ethylene ether), polyethylene or polyepoxide. In some embodiments, the radiation curable component comprises >, in a polyacrylate or polymethacrylate. The radiation curable component can be prepared from a radiation curable resin comprising at least two acrylate groups, mercapto acrylate groups, vinyl groups (e.g., vinyl, allyl or styrene) or epoxy groups. In some embodiments, the radiation curable resin comprises at least two acrylate groups or methacrylic acid S groups. In some embodiments the 'radiation curable resin may comprise a (fluorenyl) acrylate modified polyfunctional isocyanate material having at least two (fluorenyl) acrylate modified isocyanate groups, which may for example have Terminal and/or pendant isocyanate-based polyurethane prepolymers (such as those described above in connection with the preparation of particulate polyaminophthalate) and isocyanate-reactive The reaction product of a (meth) acrylate of a functional group (for example, a hydroxyl group, an amine group or a fluorenyl group) 153112.doc -29- 201130656. Exemplary suitable hydroxy or amine functional (meth) acrylates include hydroxyalkyl acrylates and methacrylates (eg, 2-hydroxyethyl acrylate (HEA), 2-hydroxyethyl decyl acrylate) (HEMA), 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate (ΗΡΑ), 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 1,3-dihydroxypropyl Acrylate, 2,3-dihydroxypropyl acrylate and mercapto acrylate, 2-hydroxyethyl acrylamide and methacrylamide, 2-hydroxybutyl (meth) acrylate, 4-hydroxyl Butyl (mercapto) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 1,4-butanediol mono(indenyl) acrylate, 2-hydroxyalkyl (fluorenyl) Ethyl decyl phosphate, 4-hydroxycyclohexyl (decyl) acrylate, 1,6-hexanediol mono(meth) acrylate, neopentyl glycol mono(indenyl) acrylate, trimethylol Propane di(meth)acrylate, trihydroxydecylethane bis(indenyl)acrylate, pentaerythritol tris(decyl)acrylate, diisoamyl Alcohol penta(indenyl) acrylate; Ν-alkyl-hydrazine-hydroxyethyl acrylamide and methacrylamide, hydroxyethyl-βcarboxyethyl acrylate, hydroxyhexyl acrylate, hydroxyoctylmethyl Acrylates, polypropylene glycol monomethacrylates, propylene glycol monomethacrylates, caprolactone acrylates, tert-butylaminoethyl methacrylates, and mixtures thereof, many of which are commercially available, for example, Suitable hydroxyethyl acrylates and hydroxypropyl acrylates are commercially available from Dow Chemical (Mid land, Mich) and Osaka Organic Chemical Industry Ltd. (Osaka, Japan). Suitable butyl acrylate acrylates are commercially available from Osaka Organic Chemical Industry Ltd. Applicable base-based polyacetic acid is available from Dow Chemical Company under the trade name 153112.doc -30- 201130656 "TONE MONOMER M-100" and from 〇saka 〇rganic
Chemical Industry Ltd·以商品名「VISCOAT 2308」構得。 適用之羥基聚醚丙烯酸酯可自Bayer Chemicals(Pittsburgh, PA)以商品名「ARCOLR-2731」)購得。 (曱基)丙稀酸醋基可位於預聚物上之側位、末端或其組 合。在一些實施例中,預聚物係以(甲基)丙烯酸酯基封 端。可輻射固化樹脂可例如藉由使具有異氰酸酯反應性官 能基之(曱基)丙烯酸酯與聚異氰酸酯預聚物通常在過量異 氰酸酯存在下反應來製備。在一些實施例中,具有異氰酸 酉旨反應性官能基之(甲基)丙稀酸自旨以一定量與異氰酸酷官 能性預聚物反應,使得異氰酸酯官能性預聚物上之約丨〇% 至約80%、約20%至約70%或約30%至約60%的異氰酸酯基 與具有異氰酸酯反應性官能基之(曱基)丙烯酸酯反應。 具有至少兩個經(甲基)丙烯酸酯改質之異氰酸酯基的一 些經(曱基)丙烯酸酯改質之聚官能性異氰酸酯材料為市售 的’例如可自 Bayer Materials Science(Pittsburgh,PA)以商 品名「DESMOLUX D100」、「DESMOLUX VPLS 2396」及 「DESMOLUX XP2510」購得的異氰酸酯胺基甲酸酯丙烯 酸醋。 包括可輻射固化組合物及可熱固化組合物之組合物通常 亦包括光引發劑或光引發劑之組合。適用之光引發劑包括 例如「α裂解型」光引發劑,其包括例如安息香、安息香 縮乙醛(例如笨曱基二曱基縮酮)' 安息香醚(例如安息香乙 醚、安息香異丙醚及安息香異丁醚)、羥基烷基苯酮(例如 153112.doc •31- 201130656 1-羥基環己基苯酮、2-羥基-2-甲基·1·苯基丙_丨_酮及卜㈠-異丙基笨基)-2-經基-2-甲基丙-i_酮)、苯甲酿環己醇、二 烧氧基苯乙酮衍生物(例如2,2-二乙氧基苯乙酮)、醯基膦 氧化物(例如雙(2,4,6-三曱基苯甲醯基)_苯基膦氧化物、雙 (2,6-二甲氧基苯甲醯基)-(2,4,4_三甲基戊基)膦氧化物及 2’4’4-二曱基苯曱酿基二苯基膦氧化物)、甲硫基苯基(N-嗎 啉基)酮(例如2-甲基-1-4(曱硫基)及苯基_2_(N_嗎啉基)」_ 丙酮)及(N-嗎啉基)苯基胺基酮;氫提取光引發劑,其包括 基於二苯甲酮、氧硫咄、p星、苯甲基、樟腦醌及香豆素酮 之光引發劑及共引發劑;及其組合。在一些實施例中,光 引發劑為醯基膦氧化物(例如雙(2,4,6-三曱基苯曱醯基)-苯 基膦氧化物、雙(2,6-二甲氧基苯甲醯基;)_(2,4,4_三曱基戊 基)膦氧化物及2,4,4-三甲基苯甲醯基二苯基膦氧化物)。 例示性之適用市售光引發劑可以以下商品名 「IRGACURE 369」、「IRGACURE 819」、「IRGACURE CGI 403」、「IRGACURE 651」、「IRGACURE 1841」、 「IRGACURE 29594」、「DAR〇CUR 1173」、「DAROCUR 4265」及「CGI1700」賭得,其皆可自ciba SpecialtyChemical Industry Ltd. is constructed under the trade name "VISCOAT 2308". Suitable hydroxy polyether acrylates are commercially available from Bayer Chemicals (Pittsburgh, PA) under the trade designation "ARCOLR-2731". The (mercapto) acrylate acrylate group can be located on the side, end or combination of the prepolymer. In some embodiments, the prepolymer is capped with a (meth) acrylate group. The radiation curable resin can be prepared, for example, by reacting a (meth) acrylate having an isocyanate reactive functional group with a polyisocyanate prepolymer, usually in the presence of an excess of isocyanate. In some embodiments, the (meth)acrylic acid having a isocyanate-reactive functional group is reacted with an isocyanate-reactive prepolymer in an amount such that the isocyanate-functional prepolymer is From about 丨〇% to about 80%, from about 20% to about 70% or from about 30% to about 60% of the isocyanate groups are reacted with a (fluorenyl) acrylate having an isocyanate-reactive functional group. Some (mercapto) acrylate-modified polyfunctional isocyanate materials having at least two (meth) acrylate-modified isocyanate groups are commercially available, for example, from Bayer Materials Science (Pittsburgh, PA). Isocyanate urethane acrylates available under the trade names "DESMOLUX D100", "DESMOLUX VPLS 2396" and "DESMOLUX XP2510". Compositions comprising a radiation curable composition and a heat curable composition typically also include a combination of a photoinitiator or a photoinitiator. Suitable photoinitiators include, for example, "alpha cleavage" photoinitiators, including, for example, benzoin, benzoin acetaldehyde (e.g., alum-based didecyl ketal) 'benzoin ether (e.g., benzoin ethyl ether, benzoin isopropyl ether, and benzoin) Isobutyl ether), hydroxyalkyl benzophenone (eg 153112.doc • 31- 201130656 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl·1 phenyl propyl 丨 ketone and ke (a)-different Propyl phenyl)-2-yl-2-methylpropan-i ketone, benzoylcyclohexanol, dioxy acetophenone derivatives (eg 2,2-diethoxy phenyl) Ketone), mercaptophosphine oxide (eg bis(2,4,6-trimethyl benzhydryl)-phenylphosphine oxide, bis(2,6-dimethoxybenzylidene)-( 2,4,4_trimethylpentyl)phosphine oxide and 2'4'4-dimercaptobenzoyldiphenylphosphine oxide), methylthiophenyl(N-morpholinyl)one (e.g. 2-methyl-1-4 (decylthio) and phenyl_2_(N_morpholinyl)"-acetone) and (N-morpholinyl)phenylaminoketone; hydrogen extraction photoinitiator , which includes light based on benzophenone, oxysulfonium, p-star, benzyl, camphorquinone and coumarinone Hair and co-initiators; and combinations thereof. In some embodiments, the photoinitiator is a mercaptophosphine oxide (eg, bis(2,4,6-trimercaptophenyl)-phenylphosphine oxide, bis(2,6-dimethoxy) Benzopyridinyl;)-(2,4,4-tridecylpentyl)phosphine oxide and 2,4,4-trimethylbenzimidyldiphenylphosphine oxide). The commercially available photoinitiators are exemplified by the following trade names "IRGACURE 369", "IRGACURE 819", "IRGACURE CGI 403", "IRGACURE 651", "IRGACURE 1841", "IRGACURE 29594", "DAR〇CUR 1173" , "DAROCUR 4265" and "CGI1700" are gambling, all from ciba Specialty
Chemicals(Ardsley,Ν·Υ·)購得。光引發劑較佳以足以提供 所要光聚合速率的量存在。該量將部分地取決於光源、待 曝露於輻射能量之層的厚度及光引發劑在該波長下之消光 係數。光引發劑組分的含量通常將為至少約〇.〇丨重量%、 至少約0.1重量%、至少約0.2重量%、至多約1 〇重量%或至 多約5重量%。 153J12.doc •32· 201130656 可輻射固化組合物及可熱固化組合物可緊密地混合於組 合物中用於製造本文中所揭示之多孔拋光墊。在一些實施 例中’以組合物之總重量計,組合物包含至少約1〇(在一 些實施例中’至少約15、20、25、30或40)重量%之可輻射 固化組合物及至多約85(在一些實施例中’至多約8〇、 75、70、65、60、55或50)重量。/〇之可輻射固化組合物。在 些貫施例中,以組合物之總重量計,組合物包含至少約 15(在一些實施例中’至少約2〇、25、3〇、35、4〇、45、 50、55或60)重量%之可熱固化組合物及至多約9〇(在一些 實施例中,至多約85、80或75)重量%之可熱固化組合物。 在一些實施例中,包含可熱固化樹脂組合物、可輻射固 化樹脂組合物及聚合物顆粒之組合物進一步包含界面活性 劑。類似地,在一些實施例中,包含交聯網狀結構(其包 含熱固化組分及輻射固化組分)、分散於交聯網狀結構内 之聚合物顆粒及分散於交聯網狀結構内之封閉氣室式孔的 多孔拋光層進一步包含分散於交聯網狀結構内之界面活性 W可用於實靶本發明之界面活性劑的實例包括陰離子界 面活性劑、陽離子界面活性劑、非離子界面活性劑、兩性 界面活性劑(例如兩性離子界面活性劑)及其組合。此等類 型之界面活性劑中的每—者可包括a化學品、料氧及基 於烴之界面活性劑。 例不性之適用陽離子界面活性劑包括脂族銨鹽。例示性 之適用陰離子界面活性劑包括㈣鹽(例如脂肪酸鹽及烧 基隨酸鹽)、確酸鹽(例如烧基苯續酸鹽、院基萘罐酸鹽 153112.doc • 33 · 201130656 及〇t-烯烴磺酸鹽)、硫酸鹽(例如高碳數醇硫酸酯鹽及烷基 醚硫酸鹽)及磷酸鹽(例如烷基磷酸鹽)^例示性之適用非離 子界面活性劑包括聚氧乙烯烷基醚、醚酯(例如甘油醋之 聚氧乙烯醚)、酯(例如聚乙二醇脂肪酸酯、甘油醋、脫水 山梨糖醇酯)及聚矽氧二醇共聚物(諸如,例如可自Air Pr〇dUCtS(Allent〇wn,PennSylvania)以商品名 rDABC〇」購 得者)。以組合物或多孔拋光層之總重量計,界面活性劑 可以例如至多10重量%(在一些實施例中,至多4重量%、3 重量%或2重量%)的量存在於組合物或拋光層中。在一些 實施例中,以組合物或多孔拋光層之總重量計,界面活性 劑以至少1%的量存在。本發明提供製造本文中所描述之 拋光塾的方法。該方法包含在包含可熱固化樹脂組合物、 可輻射固化組合物及聚合物顆粒之組合物中形成孔。在一 些實施例中’藉由混合組合物而在組合物中形成孔。混合 可藉由多種技術來進行,例如使用機器㈣機或手動混 合。在-些實施例中’混合製程(及機器攪拌機)可包括轉 動及旋轉。如上所«,聚合物肋之㈣及裝載量 響所得拋光層之孔隙率。 / 在一些貫施例中 ’ ,也σ柳~可福射 化樹脂組合物及聚合物顆粒之組合物可混合在—起且置 於支樓層上。支撐層頂部上的敞模(例如不具有頂或蓋 模)可用㈣㈣光層之所要形狀。可藉由機械手段使 合物分絲模内以均—地填充該模。適合之機械手段可 括低壓加壓或使用壓實輥麼機。 153112.doc •34- 201130656 •本文中所揭示之拋光墊的方法亦包括藉由將組合物 曝路於幸田射以至少部分地固化可輻射固化組合物且加熱組 。:乂至夕。[5分地固化可熱固化樹脂而形成拋光層。輻射 :常為紫外線輻射(亦即,輻射在約200 nm至約400⑽之 祀圍中)。至少部分地固化組合物所必需之H射量將取決 於多種因素,包括例如曝露於輻射之角度、組合物之厚 度、組合物中之可聚合基團的量及光引發劑之類型及量。 通常將八有約2GG nm至約4〇〇 nm之波長的uv光源導向於 在傳送機系統上輸送的組合物處,該傳送機系統提供適用 於組合物之輻射吸收概況的通過UV源之傳遞速率。適用 的UV光源包括例如超高麼采燈、高壓采燈、十廢采燈、 低強度螢光燈、金屬函素燈、微波供電燈、氤氣燈、雷射 束源(包括例如準分子雷射及氯離子雷射)及其組合。可接 著在例如至多約_、至多約靴、至多約135t或至 多約120t(例如在80。〇至12〇。〇、崎純代或9代至 _°C之範圍中)之高溫下將組合物置放於洪箱令歷時一段 時間(例如30分鐘至24小時)。曝露於輕射及加熱可按次序 或同時進行。在-些實施例中,曝露於輕射係在加教之前 進行。 本發明之拋光墊可具有一或多個工作表面,其中如本文 中所使用之「工作表面」係指拋光墊之可與待拋光之物品 之表面接觸的表面。在一些實施例中,待拋光之物品可為 石夕晶圓。在一些實施例中,拋光塾之工作表面可具有諸如 通道、凹槽、穿孔及其組合之表面特徵。此等表面特徵可 153112.doc •35- 201130656 增強1多種以下特性:⑴拋光漿在塾之χ作表面與所拋 光之物-之表面之間的移動;⑺磨蝕材料遠離所拋光之物 品之表面的移除及輸送;或(3)拋光墊之拋光或平坦化效 率0 可藉由多種方法將表面特徵併入至拋光墊之工作表面 中在#•實施财,I之工作表面可經機械改質,例如 藉由磨蝕或切割。在其他實施例中’可在成形製程期間, 藉由向模之至少—個内表面提供凸起特徵而將表面特 Y S塾之卫作表面中’㉟等凸起特徵可在模形成期間 破壓印至墊之工作表面中。表面特徵可以隨機或均一圖案 之形式分佈在拋光墊之卫作表面上。例示性之表面特徵圖 案可包括螺旋形、圓形、正方形、交叉線形及蜂巢紋狀圖 案。 在一些實施例中,根據本發明或根據本發明製造之拋光 墊包含自支撐層突出的個別拋光元件。現參考圖3,展示 拋光墊2之一實施例,其包含複數個拋光元件4,該等拋光 7L件4中之每一者附著至視情況選用之支撐層8。拋光墊2 進一步包含柔性層1〇β包含個別拋光元件之拋光層通常為 連續層,但此未展示於圖3中。在個別拋光元件之間,薄 臈可具有例如至多0.01 mm、0 02 mm或0.03 mm之厚度。 在其他貫施例中,包含個別拋光元件之拋光層可具有不連 續性,例如在個別拋光元件之間的薄膜中。因為在經說明 之實施例中拋光元件4係藉由拋光元件4之間的薄膜層(未 圖不)附著至支撐層,所以拋光元件4相對於其他拋光元件 153112.doc •36- 201130656 4中之一或多者的橫向移動受限,但拋光元件4通常在垂直 於各拋光元件4之拋光表面14的軸上保持可獨立移動。如 所展示,拋光元件4中之每一者一般具有實質上遍及整個 拋光元件4分佈之複數個孔15。 在藉由圖3所說明之實施例中,展示拋光元件4例如藉由 直接黏結於支撐層8而附著至支撐層8之第一主側。拋光元 件4可直接在支料8上成形及固化。在其他實施例中,抛 光元件4可使用黏合劑附著至支撐層8或直接附著至柔性層 10在此荨實施例中,多孔拋光層通常為不連續層。在藉 由圖3所說明之特定實施例中,展示可用以將拋光墊]緊固 至CMP拋光裝置(未展示於圖3中)之拋光壓板(未展示於圖3 中)的視情況選用之壓敏黏合層12係鄰近於柔性層1〇,與 支撑層8相對。 >考圖4,展示拋光墊2’之另一例示性實施例,拋光墊之, 包含具有第一主側及與第一主側相對之第二主側的柔性層 3〇 ;複數個拋光元件24,各拋光元件24具有用於將各拋光 凡件24附著至柔性層30之第一主表面的承壓區域25 ;及具 有第主表面及與第一主表面相對之第二主表面的視情況 選用之導向板31,該導向板31經定位而將複數個拋光元件 24配置於柔性層3 〇之第一主側上,其中導向板3 1之第一主 表面遠離柔性層3〇。 如藉由圖4所說明’各拋光元件24自導向板31之第一主 表面/〇實質上垂直於第-主側之第-方向延伸。在藉由圖 4所說明之特定實施例中,亦將多孔拋光元件24中之每- 153112.doc •37· 201130656 者展不為具有f質上遍及整個⑽光元件24分佈之複數個孔 15。另外,在藉由圖4所說明之特定實施例中,展示三個 拋光元件24,且將所有拋光元件24展示為包括多孔拋光表 面23及實質上遍及整個拋光元件24分佈之孔以的多孔拋光 元件。然而,應理解,可使用許多拋光元件24,且可將多 孔拋光元件之數目選擇為少至一個拋光元件至多至所有拋 光元件,或其間之任何數目。 另外藉由圖4說明視情況選用之拋光組合物分佈層28。 在拋光製程期間,視情況選用之拋光組合物分佈層28輔助 工作液體及/或拋光漿分佈至個別拋光元件24。如藉由圖4 所說明’亦可提供延伸通過至少導向板31及視情況選用之 拋光組合物分佈層28之複數個縫隙26。在一些實施例中, 導向板31亦可充當拋光組合物分佈層。 如藉由圖4所說明,在一些實施例中,各拋光元件24具 有承壓區域25,且各拋光元件24係藉由對應承壓區域25接 合至導向板31之第二主表面而附著至柔性層3〇之第一主 側。各拋光元件24之至少一部分延伸至對應縫隙26中,且 各拋光元件24亦通過對應縫隙26且自導向板31之第一主表 面向外延伸。因此,導向板3 1之複數個縫隙26用以導向拋 光元件24在支撐層30上的橫向配置,同時亦接合各承壓區 域25以將各對應拋光元件24附著至支撐層30。 因此,在拋光製程期間,拋光元件24能夠自由地在實質 上垂直於支撲層30之第一主側之方向上獨立地發生移位, 同時仍保持藉由導向板3 1附著至柔性層30。在一些實施例 153112.doc •38- 201130656 中’此情形可允許使用非柔性拋光元件,例如具有僅在拋 光表面上或僅接近於拋光表面實質上分佈之孔的多孔拋光 元件。 在藉由圖4所說明之特定實施例中,另外使用位於柔性 層30與導向板31之間的界面處之視情況選用之黏合層34將 拋光元件24附著至柔性層3 〇之第一主側《然而,可使用其 他黏結方法’包括使用例如熱及壓力將拋光元件24直接黏 結至柔性層30。 在未說明於圖4中之有關例示性實施例中,可將複數個 縫隙配置為縫隙之陣列,其中縫隙26之至少一部分包含主 孔及導向板31之底切區域,且該底切區域形成與對應之拋 光元件承壓區域25接合之肩狀凸起,藉此在不需要在拋光 元件24與柔性層30之間使用黏合劑之情況下保持拋光元件 24 ° 另外,如藉由圖4所說明,可使用第二視情況選用之黏 合層36以將視情況選用之拋光組合物分佈層28附著至導向 板31之第一主表面。另外,在藉由圖4所說明之特定實施 例中,展示可用以將拋光墊2,緊固至CMP拋光裝置(未展示 於圖4中)之拋光壓板(未展示於圖4中)的視情況選用之壓敏 黏合層32係鄰近於支撐層30,與導向板3 1相對。 亦可結合圖3中所展示之實施例(其中多孔拋光元件4不 具有承壓區域)來使用導向板及/或分佈層。可在導向板存 在下消除支撐層8 ’且多孔拋光元件可例如使用黏合劑附 著至柔性層10。 153112.doc •39- 201130656 視預期應用而定,拋光元件4及24之橫截面形狀(在大體 上平行於拋光表面14及23之方向上穿過拋光元件4及24截 取)可廣泛變化。儘管圖3及圖4展示具有大體上圓形橫截 面之大體上圓柱形的拋光元件4及24,但其他橫截面形狀 為可能的且在一些實施例中可為需要的。舉例而言,圓 形、橢圓形、三角形、正方形、矩形、六邊形及梯形橫截 面形狀可為適用的。 對於具有圓形橫截面之圓柱形拋光元件4及24,拋光元 件4及24在大體上平行於拋光表面14及23之方向上的橫截 面直徑可為約50 μπι至約20 mm,在一些實施例中,該橫 截面直徑為約1 mm至約15 mm ’且在其他實施例中,該橫 截面直徑為約5 mm至約15 mm(或甚至約5 mm至約10 mm)。對於具有非圓形橫截面之非圓柱形拋光元件,可根 據指定兩度、寬度及長度使用特性尺寸來表徵拋光元件尺 寸。在一些例示性實施例中,該特性尺寸可經選擇為約 0.1 mm至約 30 mm。 在其他例示性實施例中,各拋光元件4及24在大體上平 行於拋光表面14及23之方向上的橫截面積可為約i mm2至 約1,000 mm2,在其他實施例中為約t 〇醜2至約5〇〇麵2, 且在其他實施例中為約20 mm2至約250 mm2。 視預期應用而定,拋光元件(圖3中之4、圖4中之Μ)可 以多種圖案分佈於柔性層(圖3中之1〇、圖4中之3〇)之主側 上,且該等圖案可為規則的或不規則的。拋光元件可駐留 於柔性層之實質上整個表面上,或可存在支樓層之不包括 I53I12.doc •40· 201130656 拋光元件之區域。在一些實施例中,如藉由拋光元件之數 目、各拋光元件之橫截面積及拋光墊之橫截.面積所決定, 拋光元件具有柔性層之主表面之總面積的約3〇%至約95% 的柔性層的平均表面覆蓋率。 拋光墊在大體上平行於拋光墊之主表面之方向上的橫截 面積在一些例示性實施例中可在約100 em2至約3〇〇,〇〇〇 cm2範圍内,在其他實施例中在約1〇〇〇 cm2至約1〇〇 〇〇〇 cm2範圍内’且在其他實施例令在約2,〇〇〇 cm2至約5〇,〇〇〇 cm2範圍内。 在拋光操作中拋光塾(圖3中之2、圖4中之2,)的第一次使 用之前,在一些例示性實施例中,各拋光元件(圖3中之 4、圖4中之24)沿實質上垂直於柔性層(圖3中之1〇、圖4中 之30)之第一主側的第一方向延伸。在其他例示性實施例 中,各抛光元件在包括導向板(圖4中之31)之平面之上至少 約0.25 mm處沿該第一方向延伸。在其他例示性實施例 中’各拋光元件在包括支撐層(圖3中之1〇)之平面之上至少 約0.25 mm處沿該第一方向延伸。在其他例示性實施例 中,視所使用之拋光組合物及針對拋光元件選定之材料而 定,拋光表面(圖3中之14、圖4中之23)高於拋光元件(圖3 中之2、圖4中之2,)之基底或底面的高度可為〇 25 mm、〇 5 mm、1.5 mm、2.0 mm、2.5 mm、3.0 mm、5.0 mm、10 mm或更多。 再次參考圖4,對於特定CMp製程,遍及拋光組合物分 佈層28及導向板31之縫隙26的深度及間隔可視需要變化。 153112.doc •41 - 201130656 拋光元件2 4相對於彼此及拋光組合物分佈層2 8以及導向板 31各自維持於平面定向上,且突出高於拋光組合物分佈層 28及導向板31之表面。 在一些例示性實施例中,由拋光元件(圖3中之4、圖4中 之24)高於導向板3 1及任何拋光組合物分佈層(圖4中之28) 或支撐層(圖3中之8)之延伸物所產生的容積可為拋光組合 物在拋光組合物分佈層(圖4中之28)或支撐層(圖3中之8)之 表面上的分佈提供空間。拋光元件(圖3中之4、圖4中之24) 突出南於拋光組合物分佈層(圖4中之28)或支撐層(圖3中之 8)的量至少部分地取決於拋光元件之材料特性及拋光組合 物(工作液體及或研磨漿)在拋光組合物分佈層(圖4中之28) 或支撐層(圖3中之8)之表面上的所要流動。 可用於一些實施例之導向板可由多種材料形成,諸如聚 合物、共聚物、聚合物摻合物、聚合物複合物或其組合。 非導電性且不可滲透液體之聚合材料一般為較佳的且已 發現聚碳酸酯尤其有用。 可用於-些實施例之視情況選用之拋光組合物分佈層亦 可由多種聚合材料形成。在-些實施例中,拋光組合物分 佈層可包含至少-種親水性聚合物。較佳親水性聚合物包 括聚胺基甲酸醋、聚丙烯酸醋、聚乙烯醇、聚甲醛及其組 合1合材料較佳為多孔的’更佳包含泡泳以當壓縮抛光 組合物分佈層時在拋光操作期間提供導向基板之正壓力。 在-些實施例中’具有開放或封閉氣室之多孔或發泡材料 可為較佳的。在一些特定實施例中,拋光組合物分佈層具 153112.doc • 42· 201130656 有在約10%與約90°/。之間的孔隙率。在替代實施例中,拋 光組合物層可包含較佳在約5重量%至約60重量%之範圍中 的可吸收水之水凝膠材料(諸如親水性胺基甲酸酯)以在拋 光操作期間提供光滑表面。 在一些例示性實施例中’拋光組合物分佈層可實質上均 一地在經受拋光之基板之表面上分佈拋光組合物,此可提 供較均一之拋光《拋光組合物分佈層可視情況包括流阻元 件’諸如播板、凹槽(未展示於諸圖中)、孔及其類似物, 以在拋光期間調節拋光組合物之流動速率。在其他例示性 實施例中,拋光組合物分佈層可包括不同材料之各種層以 在離拋光表面之變化深度處達成所要之拋光組合物流動速 率。 在一些例示性實施例中,拋光元件中之一或多者可包括 界疋於拋光元件内之開放核心區域或腔,但該種配置並非 必需的。在一些實施例中,如國際專利申請公開案第w〇 2006/055720號(T〇rgerson等人)中所描述,拋光元件之核心 可包括感測器以偵測壓力、導電性、電容、渦電流及其類 似性質。 在本文中所揭示之拋光墊及/或製造拋光墊之方法的一 些實施例中,支撐層包含可撓性及柔性材料。支撐層通常 為薄膜’其提供包含可熱@化樹脂組合物及可輕射固化樹 脂組合物之組合物可在其上固化之表面。在多孔拋光層包 括扰> 光元件之些例示性實施例中,拋光元件可與支撐層 形成拋光元件附著至切層之單片,該等拋光元件之至少 153112.doc -43· 201130656 一部分包含多孔拋光元件。 當使用抛光墊時,切層亦用以㈣柔性層*受抛光组 合物中之水或其他流體影響。支㈣—般為不可滲透流體 的,但可結合視情況選用之障壁使用可滲透材料以防止或 抑制流體穿透支㈣。在—些例示性實施例中,支樓層包 含選自聚碎氧、天然橡膠、苯乙烯丁二烯橡膠、氣丁橡 膠、聚胺基甲酸酯、聚烯烴及其組合的聚合材料。支撐層 可進-步包含多種額外材料,諸如填充劑、微粒、纖維、 增強劑及其類似物。在一些實施例中,支撐層為透明的。 支撐層可例如藉由材料(例如聚矽氧、天然橡膠、苯乙 烯丁二烯橡膠、氣丁橡膠、聚胺基曱酸酯、聚烯烴及其組 合)擠壓成薄膜而形成。在一些實施例中,該材料為可例 如自 Lubrizol Advanced Materials, Inc.(Cleveland,OH)以商 品名「ESTANE 58887-NAT02」購得或自 Dow chemical (Midland,MI)以商品名「PELLETHANE」(例如 「PELLETHANE 2102-65D」)賭得的聚胺基甲酸酯。可用 作支撐層之市售薄膜包括可例如自Stevens Urethane (Easthampton,Massachusetts)以商品名「ST-1882」、「ST-l〇35」、「SS-3331」、「SS-1495L」及「ST-1880」購得的聚 胺基曱酸醋薄膜。 在本文中所揭示之拋光墊及/或製造拋光墊之方法的一 些實施例中,柔性層包含可撓性及柔性材料,諸如柔性橡 膠或聚合物。柔性層一般為可壓縮的,以提供導向拋光表 面之正壓力,且可例如幫助提供拋光墊與所拋光之基板的 153112.doc -44 - 201130656 表面之間的接觸均一性。在一些例示性實施例中,柔性層 係由可壓縮之聚合材料(例如由例如天然橡膠、合成橡膠 或熱塑性彈性體形成之發泡聚合材料)形成。封閉氣室式 多孔材料可為有用的。在一些實施例中,柔性層包含聚胺 基曱酸酯,且可為例如發泡聚胺基甲酸酯或聚胺基曱酸酯 浸潰之毛鼓。柔性層之厚度可例如在〇. 2 mm至3 mm之範 圍中。在拋光層包括拋光元件之一些例示性實施例中,可 形成具有柔性層作為附著至柔性層(其可為多孔柔性層)之 單片拋光元件的拋光元件,其至少一部分包含多孔拋光元 件。 在一些例示性實施例中,柔性層包含選自聚矽氧、天然 橡膠、苯乙烯丁二烯橡膠、氣丁橡膠、聚烯烴、聚胺基甲 酸酯及其組合的聚合材料。支撐層可進一步包含多種額外 材料,諸如填充劑、微粒、纖維、增強劑及其類似物。在 一些實施例中,柔性層為不可滲透流體的(但可結合以上 所描述之支撐層來使用可滲透材料)。 適合之市售柔性層包括例如可自Rogers Corp.(Rogers, CT)以商品名「PORON」購得的微蜂巢式聚胺基曱酸酯, 其例如具有產品名稱 4701-60-20062-04、4701-50-20062-04、4701-40-20062-04。其他適合柔性層包括可例如自 Rodel,Incorporated(Newark,DE)以商品名「SUBA IV」購 得的浸潰聚胺基甲酸目旨之聚自旨毛以及可自Rubberite Cypress Sponge Rubber Products, Inc.(Santa Ana, CA)以商 品名「BONDTEX」購得的黏合橡膠片。 153112.doc -45- 201130656 在本文中所揭示之拋光墊及/或製造拋光墊之方法的— 些實施例中’拋光墊可包括在垂直於拋光表面之方向上延 伸通過墊之窗口 ’或可使用透明層及/或透明拋光元件, 以允許拋光製程之光學端點偵測,如國際專利申請公開案 第WO 2009/140622號(Bajaj等人)中所描述。 如以上所使用之術語「透明層」意欲包括包含透明區域 之層,該透明區域可由與該層之剩餘部分相同或不同之材 料形成。在一些例示性實施例中,拋光元件、支樓層、柔 性層、或拋光層或支撐層之一區域中之至少一者可為透明 的’或可藉由將熱及/或塵力施加至材料而變得透明。在 一些實施例中’可將透明材料就地澆鑄於適當定位於層中 之孔眼中(例如使用模)以形成透明區域(例如在拋光層、支 撐層或柔性層中)。在一些實施例中,在預先形成之窗口 存在下固化拋光層以在拋光層中形成透明區域。在一些實 施例中,整個支撐層及/或柔性層可由對在端點偵測裝置 所利用之相關波長範圍中之能量透明或可變得透明的材料 形成。用於透明元件、層或區域之適合透明材料包括例如 透明聚胺基甲酸酯。 另外,如以上所使用,術語「透明」意欲包括實質上對 在由端點偵測裝置利用之相關波長範圍中之能量透明的元 件、層及或區域。在-些例示性實施财,端點偵測裝置 使用電磁能之一或多個源以發射呈紫外光、可見光、红外 光、微波、無線電波、其組合及其類似者之形式的輻射。 在一些實施例中,術語「透明」意謂衝擊於透明元件上之 153112.doc -46- 201130656 相關波長之能量的至少約25%(例如至少約35%、至少約 50%、至少約60%、至少約7〇%、至少約8〇%、至少約 90%、至少約95%)透射穿過其中。 在一些例示性實施例中,支撐層為透明的。在一些實施 例中,拋光層為透明的。在一些例示性實施例中(包括以 上在圖3中所說明之實施例),至少一個拋光元件為透明 的在一些貫施例中,支撐層為透明的,拋光層(例如拋 光几件)之至少一部分為透明的,且在柔性層中存在與拋 光層之透明部分對準的孔。 在其他例示性實施例中(包括以上在圖4中所說明之實施 例),至少一個拋光元件為透明的’且黏合層及柔性層亦 為透明的。在其他例示性實施例中,柔性層、導向板、拋 光組合物分佈層、至少一個拋光元件或其組合為透明的。 本發明進一步針對在拋光製程中使用如以上所描述之拋 光塾的方法’該方法包括使基板之表面與本發明之拋光墊 之多孔拋光層接觸’及相對於基板來相對移動拋光墊以研 磨基板之該表面。在一些實施例中,拋光塾之多孔拋光層 包含複數個拋光元件,其中至少一些為多孔的。在一些例 示性實施例中,可將工作液體提供至拋光墊表面與基板表 面之間的界面。適合之工作液體包括例如在美國專利第 6,23 8,592(Hardy 等人)號及第 6,491,843 號(Srinivasan等人) 及在國際專利申請公開案第WO 2002/33736號(Her等人)中 所述者。 在一些實施例中,本發明及/或根據本發明之方法製備 153112.doc •47· 201130656 的拋光墊中之拋光層可具有至少5微米、至少10微米或至 少15微米之平均孔徑。在一些實施例中,拋光塾可具有至 多100微米、75微米、50微米、45微米或40微米之平均孔 徑。舉例而言’平均孔徑可在5微米至1〇〇微米、5微米至 75微米、5微米至50微米、5微米至40微米或5微米至30微 米之範圍中。在一些實施例中(例如包括界面活性劑中之 至少一者或聚合物顆粒為纖維之實施例),拋光墊可具有 至多3 0微米、2 5微米或2 0微米之平均孔徑。孔徑一般係指 孔之直徑。然而’在孔為非球形之實施例中,孔徑可指孔 之最大尺寸。在一些實施例中,孔徑不均一性在4〇%至 75%範圍中或在40%至60%範圍中。在一些實施例中,孔 徑不均一性為至多75%、70%、65%、60%、55%或50%。 相對而言,包含可熱固化組合物之比較性組合物可具有大 於8 0 %、9 0 %或1 0 0 %之孔徑非均一性。在一些實施例中, 本發明之拋光塾中之拋光層可具有在5 %至60%之範圍中或 在5%至5 5%、10%至50〇/〇或10%至40%之範圍中之孔隙率。 在圖5A、圖5B、圖6A及圖6B中說明在本發明之拋光層 中與在比較性可熱固化組合物中孔徑控制之間的差別。圖 5A及圖5B分別為以下實例中之實例2中所描述的固化組合 物之剖視圖及俯視圖之顯微圖。相對而言,圖6 a及圖6 b 分別為比較性實例3之固化組合物之剖視圖及俯視圖的顯 微圖。實例2及比較性實例3皆使用1〇重量%之聚合物顆粒 製備且以相同方式混合。然而,實例2係藉由輻射固化及 藉由熱固化來固化’而比較性實例3係僅藉由熱固化來固 153112.doc •48- 201130656 化。該等顯微圖說明,與比較性實例3之孔相比,實例2中 之孔得到較好控制。以下實例中之表1中的資料亦支持, 在實例2中比在比較性實例3中存在較低之尺寸範圍、較低 之孔徑非均一性及較高之硬度。 不想受理論束缚,咸信對孔徑及孔徑非均一性之控制可 與拋光層之硬度有關。在一些實施例中,多孔拋光層具有 至少40肖氏D、45肖氏D或50肖氏D之硬度。硬度可例如根 據以下實例中所描述之測試方法2來量測。相對而言,包 含可熱固化組合物之比較性組合物可具有小於4〇肖氏D之 硬度。 界面活性劑可用於本文中所揭示之組合物及多孔拋光層 中,例如通常用於比不存在界面活性劑之情況下的雙重固 化方法更加減小孔徑及孔徑範圍且增強孔分佈。換言之, 界面活性劑之添加可幫助提供對孔徑分佈及孔之尺寸、密 度及形狀的較佳控制,此又可對均一效能之關鍵量度(例 如移除速率及晶圓内均一性)具有正面影響。圖7a及圖川 中之顯微圖(其分別為以下實例中之實例15中所描述的固 化組合物之剖視圖及俯視圖的顯微圖)說明界面活性劑之 添加可對孔徑範圍及孔分佈具有正面影響。舉例而言,在 ^例15中比在實例2中存在較低之孔徑範圍,實例2具有相 同數目之聚合物顆粒且係以相同方式製備但不具有界面活 性劑。 / 現將參考以下非限制性實例來說明本發明之例示性拋 墊。 70 153112.doc •49· 201130656 實例 材料 縮寫或商品名 描述 D100 可自 Bayer Materials Science(Pittsburgh,PA)以商品名 「Desmolux DIOOj購得的異氰酸酯胺基甲酸酯丙烯 酸酯 PHP-75D 可自 Air Products and Chemicals(Allentown, PA)以商品 名「AirthanePHP-75D」購得的異氰酸酯預聚物 P250 可自 Air Products and Chemicals, Inc.以商品名 「VersalinkP250j購得的寡聚二胺 P650 可自 Air Products and Chemicals, Inc.以商品名 「VersalinkP650」購得的寡聚二胺 Ml 690 g之P250與430 g之P-650的混合物 5350D 可自 Dainichiseika Color & Chemicals Mfg. Co·, Ltd. Advanced Polymers Group(Tokyo, Japan)以商品名 「DAIMIC-BEAZ UCN-5350D」購得的35微米尺寸之 聚胺基曱酸酯顆粒 5150D 可自 Dainichiseika Color & Chemicals Mfg. Co” Ltd-Advanced Polymers Group 以 商品名 「 DAIMIC-BEAZ UCN-5150D」購得的15微米尺寸之聚胺基曱 酸酯顆粒 5070D 可自 Dainichiseika Color & Chemicals Mfg. Co” Ltd. Advanced Polymers Group以商品名「DAIMIC-BEAZ UCN-5070D」購得的7微米尺j之聚胺基甲酸酯顆粒 TPO-L 可自 BASF(Florham Park,New Jersey)以商品名 「Lucirin TPO-L」購得的2,4,6-三甲基苯曱醯基苯基 膦酸乙醚 ST-1880 可自 Stevens Urethane(Easthampton,Massachusetts)以 商品名「ST-1880」購得的芳族聚胺基甲酸酯薄膜 A15LV 可自 Dow Chemical Company(Midland,Michigan)以商 品名METHOCEL A15 Premium LV購得的甲基纖維素 DC5604 可自 Air Products Chemicals, Inc.(Allentown, Pennsylvania)以商品名「DABCO DC5604」購得的聚’ 矽氧二醇共聚物界面活性劑 153112.doc -50- 201130656Chemicals (Ardsley, Ν·Υ·) purchased. The photoinitiator is preferably present in an amount sufficient to provide the desired rate of photopolymerization. This amount will depend in part on the source, the thickness of the layer to be exposed to the radiant energy, and the extinction coefficient of the photoinitiator at that wavelength. The photoinitiator component will generally be present in an amount of at least about 0.1% by weight, at least about 0.1% by weight, at least about 0.2% by weight, up to about 1% by weight or up to about 5% by weight. 153J12.doc • 32· 201130656 The radiation curable composition and the heat curable composition can be intimately mixed in the composition for use in making the porous polishing pad disclosed herein. In some embodiments, the composition comprises at least about 1 (in some embodiments, at least about 15, 20, 25, 30, or 40) weight percent of the radiation curable composition and up to the total weight of the composition. Approximately 85 (in some embodiments, 'up to about 8 〇, 75, 70, 65, 60, 55, or 50) by weight. / 可 radiation curable composition. In some embodiments, the composition comprises at least about 15 (in some embodiments, at least about 2, 25, 3, 35, 4, 45, 50, 55, or 60, based on the total weight of the composition). And % by weight of the heat curable composition and up to about 9 Torr (in some embodiments, up to about 85, 80 or 75) by weight of the heat curable composition. In some embodiments, the composition comprising the heat curable resin composition, the radiation curable resin composition, and the polymer particles further comprises a surfactant. Similarly, in some embodiments, a crosslinked network structure comprising a thermally curable component and a radiation curable component, polymer particles dispersed in the crosslinked network structure, and a closed gas dispersed in the crosslinked network structure are included The porous polishing layer of the chamber pore further comprises an interfacial activity dispersed in the crosslinked network structure. Examples of the surfactant which can be used for the actual target of the present invention include an anionic surfactant, a cationic surfactant, a nonionic surfactant, and amphoteric Surfactants (eg, zwitterionic surfactants) and combinations thereof. Each of these types of surfactants can include a chemical, feed oxygen, and hydrocarbon based surfactant. Exemplary cationic surfactants include aliphatic ammonium salts. Exemplary suitable anionic surfactants include (iv) salts (eg, fatty acid salts and alkylated acid salts), acid salts (eg, alkyl benzoate, fenyl naphthalate 153112.doc • 33 · 201130656 and 〇 T-olefin sulfonate), sulfate (eg, high carbon alcohol sulfate and alkyl ether sulfate), and phosphate (eg, alkyl phosphate). Exemplary nonionic surfactants include polyoxyethylene Alkyl ethers, ether esters (such as polyoxyethylene ethers of glycerol vinegar), esters (such as polyethylene glycol fatty acid esters, glycerin vinegar, sorbitan esters) and polyoxyxylene glycol copolymers (such as, for example, Available from Air Pr〇dUCtS (Allent〇wn, PennSylvania) under the trade name rDABC®). The surfactant may be present in the composition or polishing layer, for example, up to 10% by weight (in some embodiments, up to 4%, 3%, or 2% by weight), based on the total weight of the composition or porous polishing layer. in. In some embodiments, the surfactant is present in an amount of at least 1%, based on the total weight of the composition or porous polishing layer. The present invention provides a method of making the polished crucible described herein. The method comprises forming pores in a composition comprising a heat curable resin composition, a radiation curable composition, and polymer particles. In some embodiments, the pores are formed in the composition by mixing the compositions. Mixing can be done by a variety of techniques, such as using a machine (4) machine or manual mixing. In some embodiments, the 'mixing process (and machine blender) can include rotation and rotation. As described above, the polymer ribs (4) and the loading amount of the resulting polishing layer are porosity. / In some embodiments, the composition of the sulphuric resin composition and the polymer particles may be mixed and placed on the support floor. The open mold on top of the support layer (e.g., without a top or cover mold) can be used in the desired shape of the (four) (iv) light layer. The mold can be uniformly filled in the mold by means of mechanical means. Suitable mechanical means can be low pressure pressurization or use of compaction rolls. 153112.doc • 34- 201130656 • The method of polishing pad disclosed herein also includes at least partially curing the radiation curable composition and heating the set by exposing the composition to Koda. : 乂 夕 。. [5 minutes to cure the heat curable resin to form a polishing layer. Radiation: Often ultraviolet radiation (i.e., radiation in the range of about 200 nm to about 400 (10)). The amount of H radiation necessary to at least partially cure the composition will depend on a variety of factors including, for example, the angle of exposure to radiation, the thickness of the composition, the amount of polymerizable groups in the composition, and the type and amount of photoinitiator. Typically, a uv light source having a wavelength of from about 2 GG nm to about 4 〇〇 nm is directed to a composition transported on a conveyor system that provides for transmission through a UV source suitable for the radiation absorption profile of the composition. rate. Suitable UV light sources include, for example, ultra-high light, high-pressure lamps, ten waste lamps, low-intensity fluorescent lamps, metal-based lamps, microwave-powered lamps, xenon lamps, and laser beam sources (including, for example, excimer mines) Shooting and chloride ion lasers) and combinations thereof. The composition can then be placed at an elevated temperature of, for example, up to about _, up to about 1:1, up to about 135 ts, or up to about 120 ton (eg, in the range of 80 〇 to 12 〇. 〇, 纯 纯 or 9 代 to _ ° C) Put it in the flood box for a period of time (for example, 30 minutes to 24 hours). Exposure to light shots and heat can be carried out in sequence or simultaneously. In some embodiments, exposure to the light system is performed prior to teaching. The polishing pad of the present invention can have one or more working surfaces, wherein "working surface" as used herein refers to a surface of the polishing pad that is in contact with the surface of the article to be polished. In some embodiments, the item to be polished may be a stone wafer. In some embodiments, the working surface of the polishing crucible can have surface features such as channels, grooves, perforations, and combinations thereof. These surface features can be enhanced by 153112.doc •35- 201130656 with more than one of the following characteristics: (1) the movement of the polishing slurry between the surface of the crucible and the surface of the object being polished; (7) the surface of the abrasive material away from the surface of the object being polished Removal and transport; or (3) Polishing or flattening efficiency of the polishing pad 0 The surface features can be incorporated into the working surface of the polishing pad by various methods. Quality, for example by abrasion or cutting. In other embodiments, the raised features of the surface of the surface of the YS can be used to provide a relief feature during the forming process by embossing features such as '35 in the surface of the surface of the YS. Printed onto the work surface of the mat. The surface features may be distributed on the surface of the polishing pad in a random or uniform pattern. Exemplary surface features may include spirals, circles, squares, cross lines, and honeycomb patterns. In some embodiments, a polishing pad made in accordance with or in accordance with the present invention comprises individual polishing elements that protrude from the support layer. Referring now to Figure 3, an embodiment of a polishing pad 2 is shown that includes a plurality of polishing elements 4, each of which is attached to a support layer 8 as desired. Polishing pad 2 further comprises a flexible layer 1 〇 β. The polishing layer comprising individual polishing elements is typically a continuous layer, but this is not shown in Figure 3. Between the individual polishing elements, the thin crucible can have a thickness of, for example, at most 0.01 mm, 0 02 mm or 0.03 mm. In other embodiments, the polishing layer comprising individual polishing elements can have discontinuities, such as in a film between individual polishing elements. Since the polishing element 4 is attached to the support layer by a film layer (not shown) between the polishing elements 4 in the illustrated embodiment, the polishing element 4 is relative to the other polishing elements 153112.doc • 36-201130656 4 The lateral movement of one or more is limited, but the polishing elements 4 generally remain independently movable on an axis perpendicular to the polishing surface 14 of each polishing element 4. As shown, each of the polishing elements 4 generally has a plurality of apertures 15 distributed substantially throughout the entire polishing element 4. In the embodiment illustrated by Figure 3, the polishing element 4 is shown attached to the first major side of the support layer 8 by, for example, being directly bonded to the support layer 8. The polishing element 4 can be formed and cured directly on the support 8. In other embodiments, the polishing element 4 can be attached to the support layer 8 using an adhesive or directly to the flexible layer 10. In this embodiment, the porous polishing layer is typically a discontinuous layer. In the particular embodiment illustrated by Figure 3, a polishing platen (not shown in Figure 3) that can be used to secure the polishing pad to a CMP polishing device (not shown in Figure 3) is optionally employed. The pressure sensitive adhesive layer 12 is adjacent to the flexible layer 1 相对 opposite the support layer 8. Referring to Figure 4, another exemplary embodiment of a polishing pad 2' is shown, the polishing pad comprising a flexible layer 3 having a first major side and a second major side opposite the first major side; a plurality of polishing Element 24, each polishing element 24 having a pressure bearing region 25 for attaching each polishing member 24 to a first major surface of the flexible layer 30; and a first major surface and a second major surface opposite the first major surface The guide plate 31 is optionally disposed, and the guide plate 31 is positioned to dispose a plurality of polishing elements 24 on the first main side of the flexible layer 3, wherein the first main surface of the guide plate 31 is away from the flexible layer 3'. As illustrated by Figure 4, each polishing element 24 extends from a first major surface/〇 of the guide plate 31 substantially perpendicular to the first direction of the first major side. In the particular embodiment illustrated by Figure 4, each of the perforated polishing elements 24 is also not a plurality of holes 15 having a distribution of the optical elements 24 throughout the (10) optical elements. . Additionally, in the particular embodiment illustrated by Figure 4, three polishing elements 24 are shown and all of the polishing elements 24 are shown as including a porous polishing surface 23 and a porous polishing substantially throughout the entire distribution of the polishing elements 24. element. However, it should be understood that a plurality of polishing elements 24 can be used, and the number of porous polishing elements can be selected from as few as one polishing element up to all of the polishing elements, or any number therebetween. Further, the polishing composition distribution layer 28 selected as appropriate will be described with reference to FIG. During the polishing process, a polishing composition distribution layer 28, optionally selected, assists in distributing the working liquid and/or polishing slurry to the individual polishing elements 24. A plurality of slits 26 extending through at least the guide sheets 31 and optionally the polishing composition distribution layer 28 may also be provided as illustrated by Figure 4. In some embodiments, the guide plate 31 can also serve as a polishing composition distribution layer. As illustrated by FIG. 4, in some embodiments, each polishing element 24 has a pressure bearing region 25, and each polishing element 24 is attached to the second major surface of the guide plate 31 by a corresponding pressure receiving region 25 to The first main side of the flexible layer 3〇. At least a portion of each of the polishing elements 24 extends into the corresponding slit 26, and each of the polishing elements 24 also extends outwardly from the first major surface of the guide plate 31 through the corresponding slit 26. Accordingly, a plurality of slits 26 of the guide plates 31 are used to guide the lateral arrangement of the polishing elements 24 on the support layer 30 while also engaging the pressure-receiving regions 25 to adhere the respective polishing elements 24 to the support layer 30. Thus, during the polishing process, the polishing element 24 is free to be independently displaced in a direction substantially perpendicular to the first major side of the baffle layer 30 while still remaining attached to the flexible layer 30 by the guide plate 31. . In some embodiments 153112.doc • 38- 201130656 'this situation may allow the use of a non-flexible polishing element, such as a porous polishing element having a hole that is only distributed on the polishing surface or only close to the polishing surface. In the particular embodiment illustrated by Figure 4, the polishing element 24 is additionally attached to the first layer of the flexible layer 3 using an optional adhesive layer 34 at the interface between the flexible layer 30 and the deflector 31. Side "However, other bonding methods can be used" include bonding the polishing element 24 directly to the flexible layer 30 using, for example, heat and pressure. In a related exemplary embodiment not illustrated in FIG. 4, a plurality of slits may be configured as an array of slits, wherein at least a portion of the slit 26 includes an undercut region of the main hole and the guide plate 31, and the undercut region is formed. a shoulder protrusion that engages the corresponding polishing element bearing region 25, thereby maintaining the polishing element 24° without the use of an adhesive between the polishing element 24 and the flexible layer 30, as further illustrated by FIG. It is noted that a second optional adhesive layer 36 can be used to attach the optional polishing composition distribution layer 28 to the first major surface of the guide plate 31. Additionally, in the particular embodiment illustrated by Figure 4, a view of a polishing platen (not shown in Figure 4) that can be used to secure the polishing pad 2 to a CMP polishing device (not shown in Figure 4) is shown. The pressure sensitive adhesive layer 32 is selected adjacent to the support layer 30 opposite the guide plate 31. The guide plates and/or distribution layers can also be used in conjunction with the embodiment shown in Figure 3, in which the porous polishing element 4 does not have a pressure bearing area. The support layer 8' can be eliminated in the presence of a guide plate and the porous polishing element can be attached to the flexible layer 10, e.g., using an adhesive. 153112.doc • 39- 201130656 Depending on the intended application, the cross-sectional shape of the polishing elements 4 and 24 (taken through the polishing elements 4 and 24 in a direction generally parallel to the polishing surfaces 14 and 23) can vary widely. Although Figures 3 and 4 show substantially cylindrical polishing elements 4 and 24 having a generally circular cross-section, other cross-sectional shapes are possible and may be desirable in some embodiments. For example, circular, elliptical, triangular, square, rectangular, hexagonal, and trapezoidal cross-sectional shapes may be suitable. For cylindrical polishing elements 4 and 24 having a circular cross section, the cross-sectional diameter of polishing elements 4 and 24 in a direction generally parallel to polishing surfaces 14 and 23 can range from about 50 μm to about 20 mm, in some implementations. In the example, the cross-sectional diameter is from about 1 mm to about 15 mm' and in other embodiments, the cross-sectional diameter is from about 5 mm to about 15 mm (or even from about 5 mm to about 10 mm). For non-cylindrical polishing elements with a non-circular cross section, the size of the polishing element can be characterized using a characteristic dimension of two degrees, width and length. In some exemplary embodiments, the characteristic size may be selected to be from about 0.1 mm to about 30 mm. In other exemplary embodiments, each of the polishing elements 4 and 24 may have a cross-sectional area in a direction generally parallel to the polishing surfaces 14 and 23 of from about i mm 2 to about 1,000 mm 2 , in other embodiments about t 〇 2 to about 5 2 2, and in other embodiments from about 20 mm 2 to about 250 mm 2 . Depending on the intended application, the polishing elements (4 in FIG. 3, Μ in FIG. 4) may be distributed in a plurality of patterns on the main side of the flexible layer (1〇 in FIG. 3, 3〇 in FIG. 4), and The pattern can be regular or irregular. The polishing element can reside on substantially the entire surface of the flexible layer, or there can be areas of the support that do not include I53I12.doc • 40· 201130656 polishing elements. In some embodiments, the polishing element has a total area of the major surface of the flexible layer of from about 3% to about, as determined by the number of polishing elements, the cross-sectional area of each polishing element, and the cross-sectional area of the polishing pad. Average surface coverage of 95% flexible layer. The cross-sectional area of the polishing pad in a direction generally parallel to the major surface of the polishing pad can range from about 100 em2 to about 3 〇〇, 〇〇〇 cm 2 in some exemplary embodiments, in other embodiments It is in the range of about 1 〇〇〇 cm 2 to about 1 〇〇〇〇〇 cm 2 'and in other embodiments is in the range of about 2, 〇〇〇 cm 2 to about 5 〇, 〇〇〇 cm 2 . Prior to the first use of polishing 塾 (2 in Figure 2, 2 in Figure 4) in a polishing operation, in some exemplary embodiments, each polishing element (4 in Figure 3, 24 in Figure 4) ) extending in a first direction substantially perpendicular to the first major side of the flexible layer (1 in FIG. 3, 30 in FIG. 4). In other exemplary embodiments, each polishing element extends in the first direction at least about 0.25 mm above the plane including the guide plate (31 in Figure 4). In other exemplary embodiments, each polishing element extends in the first direction at least about 0.25 mm above the plane including the support layer (1 图 in Figure 3). In other exemplary embodiments, depending on the polishing composition used and the material selected for the polishing element, the polishing surface (14 in Figure 3, 23 in Figure 4) is higher than the polishing element (2 in Figure 3) The height of the base or the bottom surface of 2, in FIG. 4 may be 〇25 mm, 〇5 mm, 1.5 mm, 2.0 mm, 2.5 mm, 3.0 mm, 5.0 mm, 10 mm or more. Referring again to Figure 4, the depth and spacing of the slits 26 throughout the polishing composition distribution layer 28 and the guide sheets 31 may vary as needed for a particular CMp process. 153112.doc • 41 - 201130656 Polishing elements 2 4 with respect to each other and polishing composition distribution layer 28 and guide plates 31 are each maintained in a planar orientation and project above the surface of polishing composition distribution layer 28 and guide plate 31. In some exemplary embodiments, the polishing element (4 in Figure 3, 24 in Figure 4) is higher than the guide plate 31 and any polishing composition distribution layer (28 in Figure 4) or support layer (Figure 3 The volume produced by the extension of 8) can provide space for the distribution of the polishing composition on the surface of the polishing composition distribution layer (28 in Figure 4) or the support layer (8 in Figure 3). The amount of polishing element (4 in Figure 3, 24 in Figure 4) that protrudes south of the polishing composition distribution layer (28 in Figure 4) or the support layer (8 in Figure 3) depends, at least in part, on the polishing element. The material properties and the desired flow of the polishing composition (working liquid and or slurry) on the surface of the polishing composition distribution layer (28 of Figure 4) or the support layer (8 of Figure 3). The guide sheets useful in some embodiments can be formed from a variety of materials such as polymers, copolymers, polymer blends, polymer composites, or combinations thereof. Non-conductive, liquid impermeable polymeric materials are generally preferred and polycarbonates have been found to be particularly useful. The polishing composition distribution layer which may be used in some embodiments may also be formed from a variety of polymeric materials. In some embodiments, the polishing composition distribution layer can comprise at least one hydrophilic polymer. Preferred hydrophilic polymers include polyurethanes, polyacrylic acid vinegars, polyvinyl alcohols, polyoxymethylenes, and combinations thereof. The composite material is preferably porous. More preferably comprises a bubble to be used when compressing the polishing composition distribution layer. The positive pressure of the guide substrate is provided during the polishing operation. Porous or foamed materials having open or closed cells may be preferred in some embodiments. In some particular embodiments, the polishing composition distribution layer has 153112.doc • 42· 201130656 having about 10% and about 90°/. The porosity between. In an alternate embodiment, the polishing composition layer may comprise a water absorbing hydrogel material (such as a hydrophilic urethane) preferably in the range of from about 5% by weight to about 60% by weight for polishing operations. Provides a smooth surface during the period. In some exemplary embodiments, the 'polishing composition distribution layer may distribute the polishing composition substantially uniformly over the surface of the substrate subjected to polishing, which may provide a more uniform polishing. The polishing composition distribution layer may optionally include a flow resistance element. 'such as broadcast boards, grooves (not shown in the figures), holes and the like to adjust the flow rate of the polishing composition during polishing. In other exemplary embodiments, the polishing composition distribution layer can include various layers of different materials to achieve a desired polishing composition flow rate at varying depths from the polishing surface. In some exemplary embodiments, one or more of the polishing elements may include an open core region or cavity bounded within the polishing element, although such an arrangement is not required. In some embodiments, the core of the polishing element can include a sensor to detect pressure, conductivity, capacitance, eddy, as described in International Patent Application Publication No. WO 2006/055720 (T〇rgerson et al.). Current and its similar properties. In some embodiments of the polishing pad and/or method of making the polishing pad disclosed herein, the support layer comprises a flexible and flexible material. The support layer is typically a film which provides a surface on which the composition comprising the heatable resin composition and the light curable resin composition can be cured. In some exemplary embodiments in which the porous polishing layer includes a disturbing optical element, the polishing element can form a single piece of polishing element attached to the support layer with the support layer, at least 153112.doc -43· 201130656 part of the polishing element Porous polishing element. When a polishing pad is used, the cut layer is also used to (4) the flexible layer* is affected by water or other fluids in the polishing composition. Branches (4) are generally impermeable to fluids, but can be used in conjunction with barriers that are optionally used to prevent or inhibit fluid penetration (4). In some exemplary embodiments, the support comprises a polymeric material selected from the group consisting of polyamount, natural rubber, styrene butadiene rubber, butyl rubber, polyurethane, polyolefin, and combinations thereof. The support layer may further comprise a variety of additional materials such as fillers, particulates, fibers, reinforcing agents and the like. In some embodiments, the support layer is transparent. The support layer can be formed, for example, by extruding a film (e.g., polyfluorene, natural rubber, styrene butadiene rubber, butyl rubber, polyurethane phthalate, polyolefin, and combinations thereof) into a film. In some embodiments, the material is commercially available, for example, from Lubrizol Advanced Materials, Inc. (Cleveland, OH) under the trade designation "ESTANE 58887-NAT02" or from Dow Chemical (Midland, MI) under the trade name "PELLETHANE" ( For example, "PELLETHANE 2102-65D") gambling polyurethane. Commercially available films that can be used as a support layer include, for example, the trade names "ST-1882", "ST-l〇35", "SS-3331", "SS-1495L" and "" from Stevens Urethane (Easthampton, Massachusetts). ST-1880" commercially available polyamine phthalic acid vinegar film. In some embodiments of the polishing pad and/or method of making the polishing pad disclosed herein, the flexible layer comprises a flexible and flexible material such as a flexible rubber or polymer. The flexible layer is generally compressible to provide a positive pressure directed to the polishing surface and may, for example, help provide contact uniformity between the polishing pad and the surface of the polished substrate 153112.doc - 44 - 201130656. In some exemplary embodiments, the flexible layer is formed from a compressible polymeric material (e.g., a foamed polymeric material formed from, for example, natural rubber, synthetic rubber, or a thermoplastic elastomer). A closed cell type porous material can be useful. In some embodiments, the flexible layer comprises a polyamino phthalate and can be, for example, a foamed polyurethane or a polyamino phthalate impregnated hair drum. The thickness of the flexible layer can be, for example, in the range of 〇 2 mm to 3 mm. In some exemplary embodiments in which the polishing layer comprises a polishing element, a polishing element having a flexible layer as a monolithic polishing element attached to the flexible layer (which may be a porous flexible layer) may be formed, at least a portion of which comprises a porous polishing element. In some exemplary embodiments, the flexible layer comprises a polymeric material selected from the group consisting of polydecane, natural rubber, styrene butadiene rubber, butyl rubber, polyolefins, polyurethanes, and combinations thereof. The support layer may further comprise a variety of additional materials such as fillers, particulates, fibers, reinforcing agents, and the like. In some embodiments, the flexible layer is fluid impermeable (although the permeable material can be used in conjunction with the support layer described above). Suitable commercially available flexible layers include, for example, the micro-cellular polyurethane phthalate available from Rogers Corp. (Rogers, CT) under the trade designation "PORON", which has, for example, the product name 4701-60-20062-04, 4701-50-20062-04, 4701-40-20062-04. Other suitable flexible layers include those obtained from, for example, the impregnated polyurethanes available from Rodel, Incorporated (Newark, DE) under the trade designation "SUBA IV" and available from Rubberite Cypress Sponge Rubber Products, Inc. (Santa Ana, CA) A bonded rubber sheet available under the trade name "BONDTEX". 153112.doc -45- 201130656 In the embodiments of the polishing pad and/or method of making the polishing pad disclosed herein - in some embodiments, the 'polishing pad can include a window extending through the pad in a direction perpendicular to the polishing surface' or A transparent layer and/or a transparent polishing element is used to allow for optical endpoint detection of the polishing process as described in International Patent Application Publication No. WO 2009/140622 (Bajaj et al.). The term "transparent layer" as used above is intended to include a layer comprising a transparent region which may be formed from the same or a different material than the remainder of the layer. In some exemplary embodiments, at least one of the polishing element, the support floor, the flexible layer, or one of the polishing layer or one of the support layers may be transparent 'or may be applied to the material by applying heat and/or dust to the material And become transparent. In some embodiments, the transparent material can be cast in situ in an aperture suitably positioned in the layer (e.g., using a mold) to form a transparent region (e.g., in a polishing layer, a support layer, or a flexible layer). In some embodiments, the polishing layer is cured in the presence of a pre-formed window to form a transparent region in the polishing layer. In some embodiments, the entire support layer and/or flexible layer may be formed from a material that is transparent or transparent to the energy in the relevant wavelength range utilized by the endpoint detection device. Suitable transparent materials for the transparent elements, layers or regions include, for example, transparent polyurethanes. Additionally, as used above, the term "transparent" is intended to include elements, layers and or regions that are substantially transparent to energy in the relevant wavelength range utilized by the endpoint detection device. In some exemplary implementations, the endpoint detection device uses one or more sources of electromagnetic energy to emit radiation in the form of ultraviolet light, visible light, infrared light, microwaves, radio waves, combinations thereof, and the like. In some embodiments, the term "transparent" means at least about 25% (eg, at least about 35%, at least about 50%, at least about 60%) of the energy of a wavelength associated with 153112.doc-46-201130656 on a transparent element. At least about 7%, at least about 8%, at least about 90%, at least about 95% are transmitted therethrough. In some exemplary embodiments, the support layer is transparent. In some embodiments, the polishing layer is transparent. In some exemplary embodiments (including the embodiments illustrated above in Figure 3), at least one of the polishing elements is transparent. In some embodiments, the support layer is transparent, and the polishing layer (e.g., several pieces of polishing) At least a portion is transparent and there is a hole in the flexible layer that is aligned with the transparent portion of the polishing layer. In other exemplary embodiments (including the embodiments illustrated above in Figure 4), at least one of the polishing elements is transparent' and the adhesive layer and the flexible layer are also transparent. In other exemplary embodiments, the flexible layer, the guide sheet, the polishing composition distribution layer, the at least one polishing element, or a combination thereof are transparent. The present invention is further directed to a method of using a polishing crucible as described above in a polishing process comprising: contacting a surface of a substrate with a porous polishing layer of a polishing pad of the present invention and relatively moving the polishing pad relative to the substrate to polish the substrate The surface. In some embodiments, the polished enamel porous polishing layer comprises a plurality of polishing elements, at least some of which are porous. In some exemplary embodiments, a working fluid may be provided to the interface between the polishing pad surface and the substrate surface. Suitable working fluids include, for example, U.S. Patent Nos. 6,23, 592 (Hardy et al.) and 6,491,843 (Srinivasan et al.) and in International Patent Application Publication No. WO 2002/33736 (Her et al.). Said. In some embodiments, the polishing layer in the polishing pad of the present invention and/or the method of the present invention prepared 153112.doc • 47·201130656 may have an average pore size of at least 5 microns, at least 10 microns, or at least 15 microns. In some embodiments, the polishing crucible can have an average pore diameter of at most 100 microns, 75 microns, 50 microns, 45 microns, or 40 microns. For example, the average pore size can range from 5 microns to 1 inch, from 5 microns to 75 microns, from 5 microns to 50 microns, from 5 microns to 40 microns, or from 5 microns to 30 microns. In some embodiments (e.g., including at least one of the surfactants or embodiments in which the polymer particles are fibers), the polishing pad can have an average pore size of up to 30 microns, 25 microns, or 20 microns. The pore size generally refers to the diameter of the pore. However, in embodiments where the aperture is non-spherical, the aperture may refer to the largest dimension of the aperture. In some embodiments, the pore size non-uniformity is in the range of 4% to 75% or in the range of 40% to 60%. In some embodiments, the pore non-uniformity is at most 75%, 70%, 65%, 60%, 55%, or 50%. In contrast, a comparative composition comprising a heat curable composition can have a pore size non-uniformity of greater than 80%, 90% or 100%. In some embodiments, the polishing layer in the polishing crucible of the present invention may have a range of from 5% to 60% or from 5% to 55%, from 10% to 50%/〇 or from 10% to 40%. The porosity in the middle. The difference between the aperture control in the polishing layer of the present invention and in the comparative heat curable composition is illustrated in Figures 5A, 5B, 6A and 6B. 5A and 5B are a cross-sectional view and a micrograph of a top view of the cured composition described in Example 2 of the following examples, respectively. In contrast, Fig. 6a and Fig. 6b are respectively a cross-sectional view of the cured composition of Comparative Example 3 and a micrograph of the top view. Both Example 2 and Comparative Example 3 were prepared using 1% by weight of polymer particles and mixed in the same manner. However, Example 2 was cured by radiation curing and by heat curing, while Comparative Example 3 was cured by heat curing only 153112.doc •48-201130656. The micrographs show that the pores of Example 2 were better controlled than the wells of Comparative Example 3. The data in Table 1 of the following examples also supported that there was a lower size range, lower pore size non-uniformity, and higher hardness in Example 2 than in Comparative Example 3. Without wishing to be bound by theory, the control of pore size and pore size non-uniformity can be related to the hardness of the polishing layer. In some embodiments, the porous polishing layer has a hardness of at least 40 Shore D, 45 Shore D, or 50 Shore D. The hardness can be measured, for example, according to Test Method 2 described in the following examples. In contrast, a comparative composition comprising a heat curable composition can have a hardness of less than 4 angstroms D. Surfactants can be used in the compositions and porous polishing layers disclosed herein, for example, as generally used to reduce pore size and pore size range and enhance pore distribution more than dual curing methods in the absence of surfactant. In other words, the addition of surfactants can help provide better control over pore size distribution and pore size, density, and shape, which can have a positive impact on critical metrics of uniform performance, such as removal rate and in-wafer uniformity. . Figure 7a and the micrographs in Figure (which are respectively a cross-sectional view of the cured composition described in Example 15 in the following example and a micrograph of the top view) illustrate that the addition of the surfactant can be positive for the pore size range and pore distribution. influences. For example, in Example 15, there is a lower pore size range than in Example 2, and Example 2 has the same number of polymer particles and is prepared in the same manner but without an interfacial activator. / An exemplary pad of the present invention will now be described with reference to the following non-limiting examples. 70 153112.doc •49· 201130656 Example material abbreviation or trade name description D100 Isocyanate urethane acrylate PHP-75D available from Bayer Materials Science (Pittsburgh, PA) under the trade name “Desmolux DIOOj Available from Air Products And is an isocyanate prepolymer P250 available from Air Products and Chemicals, Inc. under the trade name "Versalink P250j" available from Air Products and Chemicals (Allentown, PA) under the trade name "Airthane PHP-75D". A mixture of oligo-diamine Ml 690 g of P250 and 430 g of P-650 available from Chemicals, Inc. under the trade name "Versalink P650" is available from Dainichiseika Color & Chemicals Mfg. Co., Ltd. Advanced Polymers Group ( Tokyo, Japan) 35 micron size polyamino phthalate particles 5150D available under the trade name "DAIMIC-BEAZ UCN-5350D" available from Dainichiseika Color & Chemicals Mfg. Co" Ltd-Advanced Polymers Group under the trade name " DAIMIC-BEAZ UCN-5150D" 15 micron size polyamino phthalate particles 5070D available from Dainichiseika Color & Chemicals Mfg 7" micron sized polyurethane granules TPO-L available from Co" Ltd. Advanced Polymers Group under the trade name "DAIMIC-BEAZ UCN-5070D" available from BASF (Florham Park, New Jersey) under the trade name "Lucirin TPO-L" commercially available 2,4,6-trimethylphenylnonylphenylphosphonic acid ether ST-1880 is commercially available from Stevens Urethane (Easthampton, Massachusetts) under the trade name "ST-1880". Aromatic polyurethane film A15LV is available from Dow Chemical Company (Midland, Michigan) under the trade name METHOCEL A15 Premium LV. Methylcellulose DC5604 is available from Air Products Chemicals, Inc. (Allentown, Pennsylvania). Poly' oxime diol copolymer surfactant available under the name "DABCO DC5604" 153112.doc -50- 201130656
測試方法1 : FESEM 遵循習知程序’使用自Hitachi High-Technologies Corporation(Tokyo, Japan)購得的 Hitachi S-4500 FESEM來 獲得物品之掃描電子顯微圖(俯視圖及剖視圖)。該等物品 之橫截面係藉由以鋒利剃刀片切割而獲得。隨後使用習知 技術以Au/Pd減塗樣品’之後進行SEM檢驗。獲得物品之 橫截面及頂面的影像。 測試方法2 :硬度計 使用自 Rex Gauge Company,Inc.(Buffalo Grove,Illinois) 購得之1 5 00型肖氏D硬度計來進行硬度計量測。表i中所報 導之值為五次量測之平均值,各量測係針對實例之不同拋 光特徵進行。 測試方法3 :經由光學顯微術之孔徑測定 使用以可自 Nikon Instruments,Inc.(Elgin,IL)購得之 MM-40 Nikon量測顯微鏡獲得之光學影像之影像分析,結 合可自 Media Cybernetics(Bethesda,MD)購得之 Image-pro plus分析軟體來測定孔徑平均值、孔徑標準差(std. Dev.)、孔徑範圍(所觀測之最大尺寸的孔減去所觀測之最 . 小尺寸的孔)、孔徑非均一性(孔徑標準差除以平均孔徑乘 以100)及孔隙率(由孔組成之影像的量測面積除以影像之整 個面積乘以100)。 在光學成像之前,以如下方式製備樣品。自物品切割三 個拋光特徵,且使用自 3M Company(St. Paul,Minnesota) 以商品名「3M SCOTCH-WELD Epoxy Potting Compound/ 153112.doc -51 - 201130656Test Method 1: FESEM Followed by a known procedure 'A scanning electron micrograph (top view and cross-sectional view) of an article was obtained using Hitachi S-4500 FESEM available from Hitachi High-Technologies Corporation (Tokyo, Japan). The cross-section of the articles is obtained by cutting with a sharp razor blade. The SEM test was then carried out after subtracting the sample with Au/Pd using conventional techniques. Obtain an image of the cross section and top surface of the item. Test Method 2: Hardness Test Hardness measurement was carried out using a 1 500 type Shore D hardness tester available from Rex Gauge Company, Inc. (Buffalo Grove, Illinois). The values reported in Table i are the average of five measurements, and each measurement is performed for different polishing characteristics of the example. Test Method 3: Aperture determination via optical microscopy Image analysis of optical images obtained with a MM-40 Nikon measuring microscope available from Nikon Instruments, Inc. (Elgin, IL), in combination with Media Cybernetics ( Image-pro plus analysis software purchased by Bethesda, MD) to determine the average pore size, the standard deviation of the pore size (std. Dev.), and the pore size range (the largest pore size observed minus the largest observed pore size. ), aperture non-uniformity (aperture standard deviation divided by average aperture multiplied by 100) and porosity (measurement area of the image consisting of holes divided by the entire area of the image multiplied by 100). Samples were prepared in the following manner prior to optical imaging. Three polishing features were cut from the article and used from 3M Company (St. Paul, Minnesota) under the trade name "3M SCOTCH-WELD Epoxy Potting Compound/ 153112.doc -51 - 201130656
Adhesive DP270 CLEAR」獲得的罐封化合物將其密封於 可自 Buehler Ltd.(41,Lake Bluff,Illinois)購得的酚系環形 物(2·5 cm外直徑x2.2 cm内直徑)中。使用可自Buehler Ltd. 購得之Ecomet 3磨床拋光機,在4.25 psi(29.3 kPa)之下壓 力下利用六步驟製程,且對於所有六個步驟使用120 rpm 之頭及壓板速度來精細地拋光内嵌於環氧化物中之特徵。 在所有情形下,藉由使用壓敏黏合劑(psa)將指定砂紙或拋 光塾安裝至Ecomet3之Μ板。 步驟 1 :自 3Μ Company以商品名「3Μ WETORDRY PSA Disc 21366」獲得的8吋直徑、240顆粒度之磨盤,研磨時 間為3分鐘,以水作為研磨流體。 步驟 2 :自 Buehler Ltd.以商品名「CARBIMET 8」PSA Disc 30-5 11 8-600-100獲得的8吋直徑、600顆粒度之磨盤, 研磨時間為6分鐘,以水作為研磨流體。 步驟3 :自 Buehler Ltd.以商品名「TEXMET 1500 Polishing Pad」40-8618獲得之8吋直徑的墊,拋光時間為6分鐘,以 可自 Allied High Tech Products,Inc.(Rancho Dominguez, California)購得的15 μιη等級之多晶金剛石懸浮液90-30035 作為拋光流體。 步驟4:自 Buehler Ltd.以商品名「ΤΕΧΜΕΤ 1500 Polishing Pad」40-8618獲得之8吋直徑的墊,拋光時間為6分鐘,以 可自 Allied High Tech Products,Inc.購得的 6 μιη等級之多 晶金剛石懸浮液90-30025作為拋光流體。 步驟5 :自 Buehler Ltd.以商品名「ΤΕΧΜΕΤ 1500 Polishing 153112.doc -52- 201130656The potting compound obtained from Adhesive DP270 CLEAR was sealed in a phenolic ring (2.5 cm outer diameter x 2.2 cm inner diameter) available from Buehler Ltd. (41, Lake Bluff, Illinois). A six-step process was used at a pressure below 4.25 psi (29.3 kPa) using an Ecotem 3 grinder polisher available from Buehler Ltd., and finely polished using a 120 rpm head and platen speed for all six steps. A feature embedded in an epoxide. In all cases, the specified sandpaper or polishing pad was mounted to the Ecomet 3's jaw by using a pressure sensitive adhesive (psa). Step 1: A grinding disc of 8 inches in diameter and 240 granules obtained under the trade name "3Μ WETORDRY PSA Disc 21366" from 3Μ Company, the grinding time is 3 minutes, and water is used as the grinding fluid. Step 2: An 8-inch diameter, 600-grain disc obtained from Buehler Ltd. under the trade name "CARBIMET 8" PSA Disc 30-5 11 8-600-100, with a grinding time of 6 minutes, using water as the grinding fluid. Step 3: A 8 inch diameter pad obtained from Buehler Ltd. under the trade name "TEXMET 1500 Polishing Pad" 40-8618, polished for 6 minutes, available from Allied High Tech Products, Inc. (Rancho Dominguez, California) A 15 μιη grade polycrystalline diamond suspension of 90-30035 is obtained as a polishing fluid. Step 4: A 8 inch diameter pad obtained from Buehler Ltd. under the trade designation "ΤΕΧΜΕΤ 1500 Polishing Pad" 40-8618, polishing time of 6 minutes, available in 6 μιη grade available from Allied High Tech Products, Inc. Polycrystalline diamond suspension 90-30025 acts as a polishing fluid. Step 5: From Buehler Ltd. under the trade name "ΤΕΧΜΕΤ 1500 Polishing 153112.doc -52- 201130656
Pad」40-8618獲得之8吋直徑的墊’拋光時間為6分鐘,以 可自 Allied High Tech Products, Inc.購得的 3 &1][1等級之多 晶金剛石懸浮液90-30020作為拋光流體。 步驟6 :自 Buehler Ltd·以商品名「TEXMET 1500 Polishing Pad」40-8618獲得之8吋直徑的墊,拋光時間為6分鐘,以 可自 Allied High Tech Products, Inc.購得的 1 0111等級之多 晶金剛石懸浮液90-30015作為拋光流體。 在拋光之後’接著使用可自Denton Vacuum,LLC (Moorestown,NJ)購得的濺塗機,利用習知技術以碳塗佈 該等特徵之經拋光表面。隨後進行光學成像。 實例1 藉由將 0.28 g 之 5350D、2.15 g 之 Ml、1.83 g 之 PHP-75D、1.27 g 之 D100 及 0.06 g 之 TPO-L 置放於 50 mL 塑 膠燒杯中來製備實例1。藉由將燒杯置放於Awat〇ri_The 8" diameter pad obtained by Pad" 40-8618 has a polishing time of 6 minutes, and is available as 3 &1] [1 grade polycrystalline diamond suspension 90-30020 available from Allied High Tech Products, Inc. Polishing fluid. Step 6: A 8 inch diameter pad obtained from Buehler Ltd. under the trade name "TEXMET 1500 Polishing Pad" 40-8618, polishing time of 6 minutes, available on the 1 0111 grade available from Allied High Tech Products, Inc. Polycrystalline diamond suspension 90-30015 is used as a polishing fluid. After polishing, the polished surface of the features was then coated with carbon using conventional techniques using a sputter coater available from Denton Vacuum, LLC (Moorestown, NJ). Optical imaging is then performed. Example 1 Example 1 was prepared by placing 0.28 g of 5350D, 2.15 g of Ml, 1.83 g of PHP-75D, 1.27 g of D100, and 0.06 g of TPO-L in a 50 mL plastic beaker. By placing the beaker in Awat〇ri_
Rentaro AR-500 Thinky攪拌機(來自 Thinky Corporation (Tokyo,japan))中及在兩步製程中運作AR_5〇〇而將組分混 合在一起。在1〇〇〇 rpm之轉動及1〇〇〇 rpm之旋轉下進行第 一步驟歷時5分鐘。在第一步驟後立即進行第二步驟,其 • 在30 rPm之轉動及2000 rpm之旋轉下進行歷時15秒,從而 形成樹脂混合物。將樹脂混合物澆注至塗佈有鐵氟龍、錄 Nl之由具有19.5 cm之長度及9.2 cm之寬度的鋁板形成之鋁 模中。該模係由錐形、圓柱形腔之正方形陣列組成。該等 腔在腔之頂部具有7.8 mm之直徑,在腔之底部具有6.5 mm 之直徑’且具有1.8 mm之深度。腔之間的中心距離為約 153112.doc -53· 201130656 11.7 mm。將一片聚胺基曱酸酯薄膜ST-1880用作襯底。將 襯底切割為約12 cmX 10 cm之尺寸,且置放於含有樹脂混 合物之模區域上。將28 cm長度xl7 cm寬度χ3.5 mm厚度之 石英板置放於聚胺基甲酸酯襯底之頂部,從而壓迫樹脂進 入腔中且在腔之間形成樹脂混合物之薄承壓區域(約〇. 5 mm厚)。 藉由在兩個在約157.5瓦特/公分(400瓦特/吋)下操作之紫 外光燈(可自 Fusion Systems Inc.(Gaithersburg,Maryland) 購得之「V」燈泡)下通過模、樹脂混合物、襯底及石英板 來UV固化樹脂混合物。模以約2 4公尺/分鐘(8英尺/分鐘) 之速度在燈下通過’其中輻射通過石英板及聚胺基甲酸酯 襯底進而到達樹脂混合物。接著將模、部分固化樹脂混合 物及聚胺基甲酸酯襯底轉移至具有1 〇〇艽之設定溫度的空 氣流通烘箱歷時兩小時以熱固化樹脂混合物。藉由輕輕拉 動聚胺基曱酸酯襯底而自模移除經固化之物品,從而形成 具有結構化拋光特徵之物品(實例丨)。 實例2 實例2係等同於實例來製備,除了樹脂混合物之組成為 0.58 g之 5350D、2.15 g之Ml、1.83 g之PHP-75D、1.27 g之 D100及 0.06 g之tp〇_l。 實例3 實例3係等同於實例1來製備,除了固化係以相反次序 (首先熱固化繼之#υν固化)進行。 實例4 153112.doc •54. 201130656 實例4係等同於實例2來製備,除了固化係以相反次序 (首先熱固化繼之以UV固化)進行。 比較性實例C1 比較性實例C1係等同於實例1來製備,除了自樹脂混合 物之組成省略5350D。 比較性實例C2 比較性實例C2係等同於比較性實例C1來製備,除了樹 脂混合物之組成為〇_31 g之5350D、2.15 g之Ml及3_65 g之 PHP-75D且僅使用100它下之熱固化歷時兩小時,省略υν 固化步驟。 比較性實例C3 比較性實例C3係等同於比較性實例C2來製備,除了樹 脂混合物之組成為0.65 g之53 50D、2.15 g之Ml及3.65 g之 PHP-75D。 實例5The Rentaro AR-500 Thinky blender (from Thinky Corporation (Tokyo, japan)) and the AR_5 在 in a two-step process mixes the components together. The first step was carried out for 5 minutes under a rotation of 1 rpm and a rotation of 1 rpm. Immediately after the first step, a second step was carried out, which was carried out for 15 seconds under a rotation of 30 rPm and a rotation of 2000 rpm to form a resin mixture. The resin mixture was cast into an aluminum mold formed of an iron plate coated with Teflon and recorded in a width of 19.5 cm and a width of 9.2 cm. The mold system consists of a square array of tapered, cylindrical cavities. The cavities have a diameter of 7.8 mm at the top of the cavity and a diameter 6.5 mm at the bottom of the cavity and a depth of 1.8 mm. The center distance between the cavities is approximately 153112.doc -53· 201130656 11.7 mm. A piece of polyaminophthalic acid film ST-1880 was used as the substrate. The substrate was cut to a size of about 12 cm x 10 cm and placed on the mold region containing the resin mixture. A quartz plate of 28 cm length x 17 cm width χ 3.5 mm thickness is placed on top of the polyurethane substrate, thereby pressing the resin into the cavity and forming a thin pressure-bearing area of the resin mixture between the cavities (about 〇. 5 mm thick). Passing a mold, a resin mixture, under two UV lamps operating at about 157.5 watts/cm (400 watts/inch) (a "V" bulb available from Fusion Systems Inc. (Gaithersburg, Maryland)) The substrate and the quartz plate are used to UV cure the resin mixture. The mold passes under the lamp at a speed of about 24 meters per minute (8 feet per minute) through which the radiation passes through the quartz plate and the polyurethane substrate to reach the resin mixture. The mold, partially cured resin mixture and polyurethane substrate were then transferred to an air flow oven having a set temperature of 1 Torr for two hours to thermally cure the resin mixture. The cured article is removed from the mold by gently pulling the polyamine phthalate substrate to form an article having structured polishing characteristics (Example 丨). Example 2 Example 2 was prepared in an equivalent manner to the example except that the composition of the resin mixture was 0.58 g of 5350 D, 2.15 g of Ml, 1.83 g of PHP-75D, 1.27 g of D100, and 0.06 g of tp〇_l. Example 3 Example 3 was prepared in the same manner as in Example 1, except that the curing was carried out in the reverse order (first heat curing followed by curing). Example 4 153112.doc • 54. 201130656 Example 4 was prepared identical to Example 2 except that the curing was carried out in the reverse order (first heat curing followed by UV curing). Comparative Example C1 Comparative Example C1 was prepared in the same manner as in Example 1, except that 5350D was omitted from the composition of the resin mixture. Comparative Example C2 Comparative Example C2 was prepared in a manner equivalent to Comparative Example C1 except that the composition of the resin mixture was 5350 D of 〇_31 g, Ml of 2.15 g, and PHP-75D of 3_65 g and only 100% of it was used. The curing took two hours and the υν curing step was omitted. Comparative Example C3 Comparative Example C3 was prepared in a manner equivalent to Comparative Example C2 except that the composition of the resin mixture was 0.65 g of 53 50D, 2.15 g of Ml, and 3.65 g of PHP-75D. Example 5
藉由將 9_49 g 之 5350D、35.00 g 之 Ml、29.69 g 之 PHP-75D、20.63 g 之 D100 及 1.03 g 之 TPO-L 置放於 500 mL 塑膠燒杯中來製備實例5。藉由將燒杯置放於Awatod-Rentaro AR-500 Thinky攪拌機中及在兩步製程中運作 AR_5 00而將組分混合在一起。在1000 rpm之轉動及1〇〇〇 rpm之旋轉下進行第一步驟歷時5分鐘。第一步驟之後立即 進行第一步驟’其在3〇 rpm之轉動及2000 rpm之旋轉下進 行歷時15秒,從而形成樹脂混合物。 使用具有約21吋(53 cm)之寬度及60 mil( 1.52 mm)之間隙 153112.doc •55· 201130656 的刀式塗佈機’在26 μιη厚之襯底上製備樹脂混合物之約 28 cm x28 cm塗層,該26 μιη厚之襯底係藉由將熱塑性聚胺 基甲酸醋(TPU)ESTANE 58887·ΝΑΤ02(可自 LubrizolExample 5 was prepared by placing 9_49 g of 5350D, 35.00 g of Ml, 29.69 g of PHP-75D, 20.63 g of D100, and 1.03 g of TPO-L in a 500 mL plastic beaker. The components were mixed by placing the beaker in an Awatod-Rentaro AR-500 Thinky blender and operating AR_5 00 in a two-step process. The first step was carried out for 5 minutes at a rotation of 1000 rpm and a rotation of 1 rpm. Immediately after the first step, the first step was carried out, which was carried out under a rotation of 3 rpm and a rotation of 2000 rpm for 15 seconds to form a resin mixture. Prepare a resin mixture of approximately 28 cm x 28 on a 26 μηη thick substrate using a knife coater with a width of approximately 21 吋 (53 cm) and a gap of 153112.doc • 55· 201130656 of 60 mil (1.52 mm) Cm coating, the 26 μιη thick substrate is made of thermoplastic polyurethane urethane (TPU) ESTANE 58887·ΝΑΤ02 (available from Lubrizol)
Advanced Materials,Inc.(Cleveland,OH)購得)在 182°C 下以 薄膜形式擠壓至紙質離型襯墊上。 將經塗佈之樹脂混合物及襯底置放於12忖X 12忖(3 0.5 cmx3(K5 cm)及0.25叫*(6.35 mm)厚度的鋁板上。將36個磁 體(0.375吋(9.6 nun)直徑χ〇.125吋(3.2 mm)厚度)裝配至鋁 板旁面中之凹座中。36個凹座呈正方形陣列,凹座之間的 中心距離為約5 cm。凹座之直徑及深度分別為9 8 mm及 4_3 mm。將約41 cmx30 cm且厚度為約ι·ό mm之塗佈有鐵 氟龍的金屬篩網置放於樹脂混合物塗層之頂部,該金屬筛 網具有圓形孔之六邊形陣列(各圓形孔之直徑為約6 2 mm) 及約8 mm之中心距離。篩網與鋁板中之磁體之間的磁引力 導致篩網被壓迫通過樹脂混合物塗層,從而在金屬篩網與 襯底之間留下塗層之薄承壓區域β等同於實例1進行塗層 之UV固化,除了不使用石英板。隨後使用與實例丨中所描 述之程序等同的程序來進行熱固化。 在自烘箱移除之後,自固化樹脂移除金屬篩網,從而形 成附著於原始襯紙之聚胺基甲酸酯襯底的有紋理墊表面。 移除紙從而曝露聚胺基甲酸酯襯底之對側。使用丨27 pm厚Advanced Materials, Inc. (Cleveland, OH) was extruded at 182 ° C in a film form onto a paper release liner. The coated resin mixture and substrate were placed on an aluminum plate of 12 忖 X 12 忖 (3 0.5 cm x 3 (K5 cm) and 0.25 mm * (6.35 mm) thickness. 36 magnets (0.375 吋 (9.6 nun)) The diameter χ〇.125吋 (3.2 mm) thickness is assembled into the recess in the side of the aluminum plate. The 36 recesses are in a square array with a center distance between the recesses of about 5 cm. The diameter and depth of the recesses are respectively 9 8 mm and 4_3 mm. A Teflon-coated metal mesh having a thickness of about 41 cm x 30 cm and a thickness of about ι·ό mm is placed on top of the resin mixture coating having a circular hole a hexagonal array (each circular hole having a diameter of about 6 2 mm) and a center distance of about 8 mm. The magnetic attraction between the screen and the magnet in the aluminum plate causes the screen to be pressed through the resin mixture coating, thereby The thin pressure-bearing area β that leaves the coating between the metal screen and the substrate is equivalent to the UV curing of the coating in Example 1, except that no quartz plate is used. Then the procedure equivalent to the procedure described in the example is used. Thermal curing. After removal from the oven, the metal screen is removed from the cured resin to form an adhesion The beginning polyurethane backing substrate is a textured surface of the pad. The removal of side paper thereby exposing the polyurethane substrate using a 27 pm thick Shu
之轉移黏合劑3M Adhesive Transfer Tape 9672(來自 3MTransfer adhesive 3M Adhesive Transfer Tape 9672 (from 3M
Company),將有紋理墊表面之聚胺基甲酸酯襯底手動層壓 至約30 cm><30 cm及0.0625吋(1.59 mm)厚度的一層聚胺基 153112.doc -56 - 201130656 甲酸酯泡沫(Rogers 「P〇R〇N」胺基曱酸酯泡沫,件號 4701-50-20062-04(來自 American Flexible pr〇ducts,Company), manually laminating a polyurethane substrate having a textured mat surface to a layer of polyurethane having a thickness of about 30 cm < 30 cm and 0.0625 吋 (1.59 mm) 153112.doc -56 - 201130656 Acid ester foam (Rogers "P〇R〇N" amine phthalate foam, part number 4701-50-20062-04 (from American Flexible pr〇ducts,
Inc.(Chaska,Minnesota))。自層板刀模切割具有18爪爪直 徑之中心孔的23 cm直徑之墊,形成具有本發明之結構化 拋光特徵的墊(實例5)。 比較性實例C4 比較性實例C4係等同於實例5來製備,除了樹脂混合物 之組成為 10.48 g 之 5350D、35.00 g 之 Ml 及 59.38 g 之 PHP- 75D且僅使用l〇〇c下之熱固化歷時兩小時,省略υγ·固化 步驟。 使用測试方法2及3 ’量測實例1至5及比較性實例c 1至 C4之硬度計值、孔徑平均值、孔徑標準差、孔徑範圍、孔 徑非均一性及孔隙率。結果展示於以下表1中。 表1 ·硬度計、孔徑及孔隙率資料 實例 硬度計 孔徑 平均值 (μιη) 孔徑 標準差 (m) 孔徑 範圍 (μιη) 孔徑 非均一性 (%) 孔隙率 (%) 1 55 31.5 18.2 84.4 57.8 21.3 2 55 32.5 17.8 76.6 54.7 11.2 3 60 30.8 21.9 97.4 71.1 12.1 4 60 26.2 14.0 90.3 53.3 18.4 5 50 33.7 15.7 93.7 46.6 37.3 C1* 60 - - - - - C2 35 37.1 40.1 189.1 107.9 21.1 C3 35 37.7 31.9 161.0 84.8 23.1 C4 35 42.1 37.1 190.3 88.0 26.6 無孔徑資料可量測,因為比較性實例C1不具有孔。 153112.doc -57- 201130656 實例6 實例6係等同於實例1來製備 0-28 g^5150D^ 2.15 g<Ml. D100及 0.06 g之 TP〇_L。 ’除了樹脂混合物之組成為 1-83 g^PHP-75D. i.2? I 1 夕U 丄編 1 說明陡實例1-1係等同於實例1來製備,除了樹r …為〜之、、…:二了樹广… 厶15 g 之 Ml、1 ·83 σ + PHP-75D. 1.27g^D1〇〇^〇〇6 g^Tp〇L〇 實例7 實例7係等同於實例1來锢 。 只〗1來製備,除了 5350D之量為〇〇f 實例8 除了 5350D之量為〇 14 貫例8係等同於實例1來製備, g 0 實例9 貫例9係等同於實例1來匍 、只1夕Η术製備,除了 535〇D之量為〇 93 g ° 說明性實例1_2 說明性實例^係等同於實例1來製備’ &了5議之量 為 1 ·31 g 〇 實例6至92FESEM(測試方法丨)結果指示其具有可接受 程度之孔隙率。說明性實例W及^之fesem(測試方法〇 結果指示其具有低程度之孔隙率。 實例10 153112.doc -58- 201130656 實例10係等同於實例5來製備,除了以下改變》樹脂混 合物之組成為0.62 g之A15LV、23 g之P-250、15.83 g之 PHP-75D、22 g 之 D100、1.1 g 之 TPO-L 及 0.68 g 之 DC5604。將該等組分置放並混合於500 ml塑膠容器中》 藉由在兩個在約157.5瓦特/公分(400瓦特/吋)下操作之紫 外光燈(可自Fusion Systems Inc.購得之「V」燈泡)下通過 具有樹脂混合物及TPU襯底之篩網來UV固化樹脂混合物。 樹脂混合物以約2.4公尺/分鐘(8英尺/分鐘)之速度在燈下通 過,其中輻射通過樹脂混合物。接著將自3M Company以 商品名「3M SCOTCHPAK 1022 Release Liner」獲得的塗 佈有含氟聚合物之聚酯薄膜離型襯墊放置於篩網及部分固 化樹脂混合物的頂部上》接著將該總成翻轉以使得聚胺基 曱酸酯襯底在頂部且塗佈有含氟聚合物之聚酯薄膜/篩網/ 部分固化樹脂混合物在底部。整個總成迅速通過同一 uv 固化製程歷時第二時間,其中石英板在襯底頂部。在第二 UV固化完成之後,移除石英板及塗佈有含氟聚合物之聚 酯薄膜,且篩網/部分固化樹脂混合物/襯底總成轉移至具 有100°C之設定溫度的空氣流通烘箱歷時兩小時以熱固化 樹脂混合物。如實例5中所描述,在冷卻至室溫之後,製 造出具有18 mm直徑之中心孔的23 cm直徑之墊’從而得到 實例10。 實例11 實例11係等同於實例10來製備,除了 A15LV之重量為 1.25 g 。 153112.doc -59- 201130656 實例12 實例12係等同於實例10來製備,除了 A15LV之重量為 3.20 g。 實例13 實例13係等同於實例10來製備,除了 A15LV之重量為 6.76 g 〇 實例14 藉由將 6.88 g 之 A15lv、127.78g 之 P-250、6_11 g 之 TPO-L及3.51 giDC56〇4置放於65〇 mL塑膠容器中來製備 貫例14 藉由將容器置放於Awatori-Rentaro ΑΙΙ·5〇〇 Thinky授拌機中及在woo印爪之轉動及looo叩爪之旋轉下 運作AR-500歷時4分鐘而將組分混合在一起。自攪拌機移 除容器且將87.29 8之卩1^-750及122.22 §之0100添加至容 器。使混合物經過兩步混合製程,在1000 rpm之轉動及 1000 rpm之旋轉下進行第一步驟歷時4分鐘。在第一步驟 之後立即進行第二步驟,其係在3〇 rpm之轉動及2〇〇〇 rpm 之旋轉下進行歷時1 5秒,從而形成樹脂混合物。 使用具有約2卜于(53 cm)之寬度及60 mil(l.52 mm)之間隙 的刀式塗佈機’在4 mil(l〇2 μπι)厚之襯底上製備樹脂混合 物之約21 inx23 in(53.3 cmx58.4)的塗層,該襯底係藉由將 TPU 「ESTANE 5 83 09-022」在210°C下以薄膜形式擠壓至 習知之4 mil聚酯離型襯塾上而形成。 將經塗佈之樹脂混合物及襯底置放於24忖x24叫·(61.0 cmx61.0 cm)及0·25叶(6.35 mm)厚度的鋁板上。將113個磁 153112.doc -60 - 201130656 體㈣75忖(9.6 mm)直徑x() 125叶(32叫厚度)裝配至銘 板背面中之凹座中。該等凹座呈由15列組成之線性陣列。 該等列中之八個每列具有8個凹座同時該等列中之7個每列 八有7個凹座。列之間的間隔為4 mm同時列内之凹座之間 的間隔為7.5 mm。凹座之第一列(接近板之邊緣)具有八個 凹座,第二列具有七個凹座.此交替圖案繼續直至第十五 列具有八個凹座為止。定位偶數列之凹座以使得其在對應 鄰近列之凹座之間的中心處。凹座之直徑及深度分別為 9.8 mm及4_3 mm。使用能夠耐高溫之膠帶緊固凹座中之磁 體。將約24 inx24 in(61.0 cmx61.〇 cm)且厚度為約 16 mm 之塗佈有鐵氟龍的金屬篩網置放於樹脂混合物塗層之頂 部’該金屬篩網具有圓形孔之六邊形陣列(各圓形孔之直 徑為約6.2 mm)及約8 mm之中心距離。篩網與鋁板中之磁 體之間的磁引力導致篩網被壓迫通過樹脂混合物塗層,從 而在金屬篩網與襯底之間留下塗層之薄承壓區域。 遵循實例10之等同固化程序來固化樹脂混合物。在自烘 箱移除之後,自固化樹脂移除金屬篩網,從而形成附著於 原始襯聚酯之聚胺基甲酸酯TPU襯底的有紋理塾表面。使 用 127 μιη厚之轉移黏合劑「3M ADHESIVE TRANSFER TAPE 9672」(來自3M Company),將有紋理墊表面之聚酯 離型襯塾手動層壓至約21 in><23 in(53.3 cmx58.4)及0.0787 吋(2 mm)厚度的一層聚胺基甲酸酯泡沫。自層板刀模切割 20.0 in(50.8 cm)直徑之墊,形成具有本發明之結構化拋光 特徵的墊(實例14)。 153112.doc • 61 - 201130656 比較性實例C5 比較性實例C5係等同於實例ι〇來製備,除了自樹脂混合 物之組成省略A15LV。 比較性實例C6 比較性實例C6係等同於實例10來製備,除了樹脂混合物 之組成為 1.44 g 之 A15LV、23 g 之 P-250、47.50 g 之 PHP-75D及0.68 g之DC5 604且僅使用1〇〇。(:下之熱固化歷時 兩小時,省略UV固化步驟。 比較性實例C7 比較性實例C7係等同於比較性實例C6來製備,除了自 樹脂混合物之組成省略Ai 5lv。 實例15 實例15係等同於實例5來製備,除了樹脂混合物之組成 為 7.58 g之 5350D、28.00 g之 Ml、23.75 g之 PHP-75D、 16·50 g之D100、0.83 g之 TPO-L及 0.77 g之 DC5604。 比較性實例C8 比較性實例C8係等同於實例丨5來製備,除了樹脂混合物 之組成為 8.39 g 之 5350D、28.00 g 之]VII、47.50 g 之 PHP-75D及3.5 g之DC5604且僅使用loot下之熱固化歷時 兩小時,省略UV固化步驟。 使用測試方法2及3,量測實例1 〇至15及比較性實例C5至 C8之硬度計值、孔徑平均值、孔徑標準差、孔徑範圍、孔 徑非均一性及孔隙率。結果展示於以下表2中。 153112.doc •62· 201130656 表2.硬度計、孔徑及孔隙率資料Inc. (Chaska, Minnesota)). A 23 cm diameter pad having a central hole of 18 claw diameter was cut from the laminate to form a pad having the structured polishing feature of the present invention (Example 5). Comparative Example C4 Comparative Example C4 was prepared in the same manner as in Example 5 except that the composition of the resin mixture was 10.48 g of 5350 D, 35.00 g of Ml and 59.38 g of PHP-75D and only the thermal curing duration of l〇〇c was used. For two hours, the υγ·curing step was omitted. The hardness values, pore diameter average, pore size standard deviation, pore size range, pore diameter non-uniformity, and porosity of Examples 1 to 5 and Comparative Examples c 1 to C4 were measured using Test Methods 2 and 3'. The results are shown in Table 1 below. Table 1 · Hardness Tester, Pore Size and Porosity Data Example Hardness Tester Pore Average (μιη) Pore Size Standard Difference (m) Pore Size Range (μιη) Pore Size Heterogeneity (%) Porosity (%) 1 55 31.5 18.2 84.4 57.8 21.3 2 55 32.5 17.8 76.6 54.7 11.2 3 60 30.8 21.9 97.4 71.1 12.1 4 60 26.2 14.0 90.3 53.3 18.4 5 50 33.7 15.7 93.7 46.6 37.3 C1* 60 - - - - - - C2 35 37.1 40.1 189.1 107.9 21.1 C3 35 37.7 31.9 161.0 84.8 23.1 C4 35 42.1 37.1 190.3 88.0 26.6 No pore size data can be measured because comparative example C1 does not have pores. 153112.doc -57- 201130656 Example 6 Example 6 is equivalent to Example 1 to prepare 0-28 g^5150D^ 2.15 g<Ml. D100 and 0.06 g of TP〇_L. 'In addition to the composition of the resin mixture is 1-83 g^PHP-75D. i.2? I 1 夕 U 丄 1 1 Description Steep example 1-1 is equivalent to the preparation of Example 1, except that the tree r ... is ~, ...: two trees wide... 厶15 g of Ml, 1 ·83 σ + PHP-75D. 1.27g^D1〇〇^〇〇6 g^Tp〇L〇 Example 7 Example 7 is equivalent to Example 1. Only 1 is prepared, except that the amount of 5350D is 〇〇f. Example 8 except that the amount of 5350D is 〇14. Example 8 is equivalent to the preparation of Example 1, g 0 Example 9 Example 9 is equivalent to Example 1 匍, only 1 Η Η 制备 , , 〇 〇 g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g g (Test Method 丨) The results indicate that it has an acceptable degree of porosity. Illustrative examples W and ^fesem (test method 〇 results indicate that it has a low degree of porosity. Example 10 153112.doc -58- 201130656 Example 10 is equivalent to Example 5 to prepare, except for the following changes: the composition of the resin mixture is 0.62 g of A15LV, 23 g of P-250, 15.83 g of PHP-75D, 22 g of D100, 1.1 g of TPO-L and 0.68 g of DC5604. Place these components in a 500 ml plastic container Medium by passing a resin mixture and a TPU substrate under two ultraviolet lamps ("V" bulbs available from Fusion Systems Inc.) operating at approximately 157.5 watts/cm (400 watts/inch) A screen is used to UV cure the resin mixture. The resin mixture is passed under the lamp at a speed of about 2.4 meters per minute (8 feet per minute), wherein the radiation passes through the resin mixture. It will then be sold under the trade name "3M SCOTCHPAK 1022 Release Liner from 3M Company. The obtained fluoropolymer-coated polyester film release liner is placed on top of the screen and the partially cured resin mixture. Then the assembly is turned over so that the polyaminophthalate substrate is on top and Coated with fluorine The polyester film/screen/partially cured resin mixture is at the bottom. The entire assembly is quickly passed through the same uv curing process for a second time, with the quartz plate on top of the substrate. After the second UV curing is completed, the quartz is removed. The sheet and the polyester film coated with the fluoropolymer, and the screen/partially cured resin mixture/substrate assembly was transferred to an air flow oven having a set temperature of 100 ° C for two hours to thermally cure the resin mixture. As described in Example 5, after cooling to room temperature, a 23 cm diameter pad having a central hole of 18 mm diameter was fabricated to give Example 10. Example 11 Example 11 was prepared in an equivalent manner to Example 10 except for the weight of A15LV. 1.25 g. 153112.doc -59- 201130656 Example 12 Example 12 was prepared identically to Example 10 except that the weight of A15LV was 3.20 g. Example 13 Example 13 was prepared in an equivalent manner to Example 10 except that the weight of A15LV was 6.76 g. Example 14 Prepare Example 14 by placing 6.88 g of A15 lv, 127.78 g of P-250, 6_11 g of TPO-L, and 3.51 giDC 56 〇4 in a 65 〇mL plastic container. In Awatori-Rentaro ΑΙΙ · 5〇〇 Thinky machine and mixed into the operating timing AR-500 for 4 minutes mixing together components at the rotating plate rotates the pawl of the pawl woo and looo knock. Remove the container from the blender and add 87.29 8 卩 1^-750 and 122.22 § 0100 to the container. The mixture was subjected to a two-step mixing process, and the first step was carried out for 4 minutes under a rotation of 1000 rpm and a rotation of 1000 rpm. Immediately after the first step, a second step was carried out, which was carried out at a rotation of 3 rpm and a rotation of 2 rpm for 15 seconds to form a resin mixture. Preparation of a resin mixture on a 4 mil (l〇2 μπι) thick substrate using a knife coater having a width of about 2 (53 cm) and a gap of 60 mil (1.52 mm) Inx23 in (53.3 cm x 58.4) coating by pressing TPU "ESTANE 5 83 09-022" at 210 ° C into a conventional 4 mil polyester release liner And formed. The coated resin mixture and substrate were placed on an aluminum plate having a thickness of 24 Å x 24 (61.0 cm x 61.0 cm) and 0. 25 leaves (6.35 mm). Install 113 magnets 153112.doc -60 - 201130656 body (four) 75 忖 (9.6 mm) diameter x () 125 leaves (32 thickness) into the recess in the back of the nameplate. The dimples are in a linear array of 15 columns. Eight of the columns have eight recesses and seven of the columns have eight recesses per column eight. The spacing between the columns is 4 mm and the spacing between the recesses in the column is 7.5 mm. The first row of recesses (near the edge of the panel) has eight recesses and the second row has seven recesses. This alternating pattern continues until the fifteenth column has eight recesses. The recesses of the even columns are positioned such that they are at the center between the recesses corresponding to the adjacent columns. The diameter and depth of the recess are 9.8 mm and 4_3 mm, respectively. Use a tape that is resistant to high temperatures to tighten the magnets in the recess. A Teflon-coated metal mesh of about 24 inx24 in (61.0 cm x 61. inch cm) and a thickness of about 16 mm is placed on top of the resin mixture coating. The metal mesh has six sides of a circular hole. The array (each circular hole has a diameter of about 6.2 mm) and a center distance of about 8 mm. The magnetic attraction between the screen and the magnet in the aluminum plate causes the screen to be forced through the resin mixture coating, leaving a thin pressure-bearing area of the coating between the metal screen and the substrate. The resin mixture was cured following the equivalent curing procedure of Example 10. After removal from the oven, the metal screen is removed from the cured resin to form a textured tantalum surface attached to the original polyester-lined TPU substrate. The 134 μιη thick transfer adhesive "3M ADHESIVE TRANSFER TAPE 9672" (from 3M Company) was used to manually laminate the polyester release liner with textured mat surface to about 21 in><23 in<23 in (53.3 cmx58.4) And a layer of polyurethane foam with a thickness of 0.0787 吋 (2 mm). A 20.0 in (50.8 cm) diameter pad was cut from the laminate to form a pad having the structured polishing features of the present invention (Example 14). 153112.doc • 61 - 201130656 Comparative Example C5 Comparative Example C5 was prepared in the same manner as in Example ι except that the A15LV was omitted from the composition of the resin mixture. Comparative Example C6 Comparative Example C6 was prepared in an equivalent manner to Example 10 except that the composition of the resin mixture was 1.44 g of A15LV, 23 g of P-250, 47.50 g of PHP-75D, and 0.68 g of DC5 604 and only 1 was used. Hey. (The following thermal curing lasted for two hours, omitting the UV curing step. Comparative Example C7 Comparative Example C7 was prepared in the same manner as Comparative Example C6 except that Ai 5lv was omitted from the composition of the resin mixture. Example 15 Example 15 is equivalent to Prepared in Example 5 except that the composition of the resin mixture was 7.58 g of 5350 D, 28.00 g of Ml, 23.75 g of PHP-75D, 16.50 g of D100, 0.83 g of TPO-L, and 0.77 g of DC5604. Comparative Example C8 Comparative Example C8 was prepared in an equivalent manner to Example 5 except that the composition of the resin mixture was 8.35 g of 5350D, 28.00 g of VII, 47.50 g of PHP-75D, and 3.5 g of DC5604 and only heat curing using a loot. The UV curing step was omitted for two hours. Using Test Methods 2 and 3, the hardness values, pore diameter average, pore size standard deviation, pore size range, and pore size non-uniformity of Examples 1 to 15 and Comparative Examples C5 to C8 were measured. And porosity. The results are shown in Table 2. 153112.doc •62· 201130656 Table 2. Hardness tester, pore size and porosity data
貫穿本說明書,對「一個實施例」、「一些實施例」、「一 或多個實施例」或「一實施例」之提及(不管在術語「實 施例」之前是否包括術語「例示性」)均意謂結合該實施 例所描述之特疋特徵、結構、材料或特性包括於本發明之 一些例示性實施例的至少—個實施例卜因此貫穿本說 明“同地方出現之…諸如「在一或多個實施例 」在些實施例中」、「在一個實施例中」或「在一實 心〇中」纟必係指本發明之—些例示性實施例的同-實施 J另外,在—或多個實施例中,特定特徵、結構、材料 或特性可以任何適合之方式組合。 儘管,說明書已詳細描述一些例示性實施例,但應瞭 解,熟習此項技術者在理解前述内容之後可容易地設想出 153112.doc •63· 201130656 該等實施例之改變、變更及等效形式。因此,應瞭解本發 明不應過度地受限於上文所闡述之說明性實施例。詳言 之,如本文中所用,藉由端點列舉數值範圍意欲包括彼範 圍内所包含之所有數字(例如1至5包括1、1 5、2、2 75、 3、3.80、4及5)。另外,本文中所使用之所有數字均假定 以術語「約」修飾。此外,本文中所引用之所有公開案及 專利係以全文引用之方式併入本文中,該引用的程度就如 同已特定地且個別地將各個別公開案及專利以引用之方式 併入一般。 已描述了各種例示性實施例。此等及其他實施例係在以 下申請專利範圍之範内。 【圖式簡單說明】 圖1Α及圖1Β分別為先前技術中之多孔拋光塾之剖視圖 及俯視圖的顯微圖; 圖2為本發明之拋光墊之一實施例的示意性側視圖; 圖3為本發明之另一實施例的具有突出拋光元件之拋光 墊的側視圖; 圖4為本發明之又一實施例的具有突出拋光元件之拋光 墊的側視圖; 圖5 Α及圖5Β分別為可用於形成本發明之拋光層的實例2 之固化組合物之剖視圖及俯視圖的顯微圖; 圖6A及圖6B分別為比較性實例3之固化組合物的剖視圖 及俯視圖的顯微圖; 圖7A及圖7B分別為可用於形成本發明之拋光層的實例 153112.doc • 64- 201130656 1 5之固化組合物的剖視圖及俯視圖的顯微圖; 圖8為可用於形成本發明之拋光層的實例1 物之剖視圖的顯微圖。 【主要元件符號說明】 2 拋光墊 2' 拋光墊 2a 多孔拋光墊 4 拋光元件 8 視情況選用之支樓層 8a 視情況選用之支樓層 10 柔性層 10a 柔性層 12 視情況選用之壓敏黏合層 12a 多孔拋光層 14 抛光表面 15 孔 23 拋光表面 24 拋光元件 25 承壓區域 26 縫隙 28 情況選用之拋光組合物分佈層 30 柔性層 31 視情況選用之導向板 32 視情況選用之壓敏黏合層 153112.doc -65- 201130656 34 36 視情況選用之黏合層 第二視情況選用之黏合層 153112.doc -66-Throughout this specification, reference is made to "one embodiment", "some embodiments", "one or more embodiments" or "an embodiment" (whether or not the term "exemplary" is included before the term "embodiment" The features, structures, materials, or characteristics described in connection with the embodiments are included in at least one embodiment of some exemplary embodiments of the present invention. One or more embodiments, in some embodiments, "in one embodiment" or "in a solid", are meant to refer to the same embodiments of the present invention. In particular, the particular features, structures, materials, or characteristics may be combined in any suitable manner. Although the specification has described some exemplary embodiments in detail, it should be understood that those skilled in the art can readily conceive 153112.doc.63.201130656 changes, modifications, and equivalents of the embodiments. . Therefore, it is to be understood that the invention is not limited to the illustrative embodiments set forth above. In particular, as used herein, the recitation of numerical ranges by endpoints is intended to include all numbers included in the <RTI ID=0.0> </ RTI> </ RTI> <RTI ID=0.0> </ RTI> </ RTI> (eg, 1 to 5 includes 1, 1, 5, 2, 2, 75, 3, 3.80, 4, and 5) . In addition, all numbers used herein are assumed to be modified by the term "about." In addition, all of the publications and patents cited herein are hereby incorporated by reference in their entirety in their entirety in their entirety in the extent of the disclosure in particular Various illustrative embodiments have been described. These and other embodiments are within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A and FIG. 1B are respectively a cross-sectional view and a top view of a porous polished crucible in the prior art; FIG. 2 is a schematic side view of an embodiment of a polishing pad of the present invention; FIG. FIG. 4 is a side view of a polishing pad having a protruding polishing element according to still another embodiment of the present invention; FIG. 5 and FIG. FIG. 6A and FIG. 6B are a cross-sectional view and a micrograph of a top view of the cured composition of Comparative Example 3, respectively; FIG. 6A and FIG. Figure 7B is a cross-sectional view and a top view, respectively, of a cured composition of Example 153112.doc • 64-201130656 15 which can be used to form the polishing layer of the present invention; Figure 8 is an example 1 which can be used to form the polishing layer of the present invention. A micrograph of a cross-sectional view of the object. [Main component symbol description] 2 Polishing pad 2' Polishing pad 2a Porous polishing pad 4 Polishing element 8 Supporting floor 8a as appropriate Depending on the case, the floor 10 is selected as the flexible layer 10a Flexible layer 12 Depending on the pressure-sensitive adhesive layer 12a Porous polishing layer 14 Polished surface 15 Hole 23 Polished surface 24 Polishing element 25 Pressure-bearing area 26 Slit 28 Conditional polishing composition distribution layer 30 Flexible layer 31 Depending on the case, the guide plate 32 is optionally used as the pressure-sensitive adhesive layer 153112. Doc -65- 201130656 34 36 Adhesive layer selected according to the situation Secondly selected adhesive layer 153112.doc -66-
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28898209P | 2009-12-22 | 2009-12-22 | |
| US42244210P | 2010-12-13 | 2010-12-13 |
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| TW201130656A true TW201130656A (en) | 2011-09-16 |
| TWI517975B TWI517975B (en) | 2016-01-21 |
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| TW099145034A TWI517975B (en) | 2009-12-22 | 2010-12-21 | Polishing pad and method of manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130012108A1 (en) |
| JP (1) | JP5728026B2 (en) |
| KR (1) | KR101855073B1 (en) |
| SG (1) | SG181890A1 (en) |
| TW (1) | TWI517975B (en) |
| WO (1) | WO2011087737A2 (en) |
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Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6077601A (en) * | 1998-05-01 | 2000-06-20 | 3M Innovative Properties Company | Coated abrasive article |
| US6477926B1 (en) * | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
| CN100496896C (en) * | 2000-12-01 | 2009-06-10 | 东洋橡膠工业株式会社 | Polishing pad |
| US7097549B2 (en) * | 2001-12-20 | 2006-08-29 | Ppg Industries Ohio, Inc. | Polishing pad |
| US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
| US20070010169A1 (en) * | 2002-09-25 | 2007-01-11 | Ppg Industries Ohio, Inc. | Polishing pad with window for planarization |
| JP2005538571A (en) * | 2002-09-25 | 2005-12-15 | ピーピージー インダストリーズ オハイオ, インコーポレイテッド | Polishing pad with window for planarization |
| US20040209066A1 (en) * | 2003-04-17 | 2004-10-21 | Swisher Robert G. | Polishing pad with window for planarization |
| KR20040093402A (en) * | 2003-04-22 | 2004-11-05 | 제이에스알 가부시끼가이샤 | Polishing Pad and Method of Polishing a Semiconductor Wafer |
| JP2006114666A (en) * | 2004-10-14 | 2006-04-27 | Asahi Kasei Electronics Co Ltd | Polishing pad, its manufacturing method, and polishing method using the same |
| DE102006035726A1 (en) * | 2006-07-28 | 2008-01-31 | Evonik Röhm Gmbh | Process for the preparation of (meth) acrylate-based ABA triblock copolymers |
-
2010
- 2010-12-20 US US13/518,475 patent/US20130012108A1/en not_active Abandoned
- 2010-12-20 KR KR1020127019080A patent/KR101855073B1/en not_active Expired - Fee Related
- 2010-12-20 JP JP2012546101A patent/JP5728026B2/en active Active
- 2010-12-20 WO PCT/US2010/061199 patent/WO2011087737A2/en not_active Ceased
- 2010-12-20 SG SG2012046546A patent/SG181890A1/en unknown
- 2010-12-21 TW TW099145034A patent/TWI517975B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI630067B (en) * | 2011-05-23 | 2018-07-21 | Cabot Microelectronics Corporation | Polishing pad having a homogenous body with discrete protrusions thereon and method of manufacturing the same |
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| TWI574782B (en) * | 2012-03-20 | 2017-03-21 | 傑曲羅德斯公司 | Self-adjusting honing pad and manufacturing method thereof |
| TWI642694B (en) * | 2014-03-31 | 2018-12-01 | 日商富士紡控股股份有限公司 | Honing pad and method of manufacturing same |
| TWI704976B (en) * | 2015-06-26 | 2020-09-21 | 美商陶氏全球科技責任有限公司 | Controlled-porosity method for forming polishing pad |
| TWI758965B (en) * | 2019-11-21 | 2022-03-21 | 南韓商Skc索密思股份有限公司 | Polishing pad, preparation method thereof, and preparation method of semiconductor device using same |
| TWI830241B (en) * | 2021-05-26 | 2024-01-21 | 南韓商Skc索密思有限公司 | Polishing system, polishing pad and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130012108A1 (en) | 2013-01-10 |
| TWI517975B (en) | 2016-01-21 |
| JP5728026B2 (en) | 2015-06-03 |
| WO2011087737A3 (en) | 2011-09-15 |
| CN102762340A (en) | 2012-10-31 |
| WO2011087737A2 (en) | 2011-07-21 |
| KR20120120247A (en) | 2012-11-01 |
| SG181890A1 (en) | 2012-07-30 |
| KR101855073B1 (en) | 2018-05-09 |
| JP2013515379A (en) | 2013-05-02 |
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