201130395 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種於電讓處理室内將被施予電聚 處理之被處理基板的周緣圍繞之電毁處理用圓環狀組 件及具有該電漿處理用圓環狀組件之電漿處理楚^ 【先前技術】 電漿處理裝置被廣泛地利用於作為半導體元件戈 FPD(Flat Panel Display)之製造過程中的蝕刻、沉積、: 化、濺鍍等的裝置。為電漿處理裴置的其中之一之電= 蝕刻裝置係於處理容器或反應室内平行地設置有^ ^ 電極與下部電極，並將被處理基板（半導體晶圓、= 基板等）載置於下部電極上，而大部分係透過匹配 St生用高頻電壓施加至上部電極或下部電極:ί -般來說，上部電極係設置有多個氣體嘴出孔 H乳體f出孔將經電㈣之㈣氣體噴 趙’來同時對被處理基板整面進行餘刻。、土板整 通常，平行平板型電漿蝕刻裝置的 :極係平行地設置，並透過匹配器來將電漿產生用、：部 二壓施加至上部電極或下部電極。 U ，頻 ~而被加速的電子、從電極放出的 ^局頻電 電子會與處理氣體的分子發生電^加熱後的 艘的•藉嶋中的自由基 =來 201130395 于所欲的微細加工 此處，隨著半導體積體電路的微 便被要求低壓下的高密度電漿。例如，對：錢理 處理裝置中被要求有更高效率、高型電襞 處理。又’伴隨著半導體晶片尺寸面::壓:：漿 3的大口徑化，而被要求有更大口徑的；漿，且;； 室（處理容器）愈來愈大型化。 κ且反應201130395 VI. Description of the Invention: [Technical Field] The present invention relates to an annular assembly for electrical destruction treatment that surrounds a periphery of a substrate to be processed to be subjected to electropolymerization in a processing chamber, and has the same Plasma treatment of a ring-shaped component for slurry processing. [Prior Art] A plasma processing apparatus is widely used for etching, deposition, etching, sputtering in the manufacturing process of a semiconductor component FPD (Flat Panel Display). And other devices. An electric=etching device for one of the plasma processing devices is provided with a ^^ electrode and a lower electrode in parallel in the processing container or the reaction chamber, and the substrate to be processed (semiconductor wafer, = substrate, etc.) is placed On the lower electrode, most of them are applied to the upper electrode or the lower electrode by matching the St. high frequency voltage: ί - generally, the upper electrode is provided with a plurality of gas nozzle outlets H, the body of the body, the outlet hole will be charged (4) (4) Gas spray Zhao' to simultaneously carry out the entire surface of the substrate to be processed. Normally, the parallel plate type plasma etching apparatus: the poles are arranged in parallel, and the plasma is generated by the matching device, and the second pressure is applied to the upper electrode or the lower electrode. U, the frequency-accelerated electrons, the constant-frequency electric electrons emitted from the electrodes, and the molecules of the processing gas are electrically heated. The free radicals in the borrowings are used in 201130395. As the microscopy of the semiconductor integrated circuit is required to be high-density plasma at low pressure. For example, it is required that higher efficiency and high power handling are required in the processing device. Further, along with the large diameter of the semiconductor wafer size surface::pressure::3, it is required to have a larger diameter; the slurry, and the chamber (processing container) is becoming larger and larger. κ and reaction
mj ㈣著被處理基板的大口徑化之大昨雷將 中，電極(上部電極或下部電極)中心部：電； 強度有較邊緣部的電場強度要高之傾向。： ^電製密度便有在電極中，侧與電極邊緣㈣^ 率題。因此，在電漿密度高的部分之電漿的電： 欠低’而在對向電極處’電流亦會集中至該部分， 而有電激密度的不肖勻性更加提高之問題。 再者’伴隨著被處理基板的大口徑所造成之反應室 的^型化’在㈣之實際製程中，因溫度分佈等而引起 =處理氣體流動所造成的影響，亦有電漿密度在被處理 &才反的中心部與周緣部會不同之問題。 電漿密度的不均勻性會使得被處理基板的蝕刻率 產生差異，特別是會成為從被處理基板的周緣部所取得 之7°件的良率惡化之原因。 針搿上述問題，至今已嘗試對電極構造進行各種改 良例如，為解決該問題，已知有利用高電阻組件來構 5 201130395 成高頻電極的主面中心部者（專利文獻U。該技術係以 高電阻組件來構成連接於高頻電源一側之電極主面（電 毁接觸面）的中央部’以使電極主面的電場強度在電極 中心部處較電極外周部要相對地低，以補正電場分佈的 不均勻性。 又，專利文獻2所揭示之電漿處理裝置係將介電體 埋入與處理空間呈對向之電極的主面，並使相對於從電 和面被放射至處理空間之高頻阻抗（impedance)在電 極中〜部處要相對地大，而在電極邊緣部處要相對地 小’以k南電場分佈的均勻性。 另方面，為提高被處理基板邊緣部之電漿密度分 佈的均句性，Mj (4) The large diameter of the substrate to be processed is large. The center of the electrode (upper electrode or lower electrode): electricity; the strength tends to be higher than that of the edge portion. : ^ Electrical density will be in the electrode, side and electrode edge (four) ^ rate question. Therefore, in the portion of the plasma having a high plasma density, the electric current is low and the current at the counter electrode is concentrated to the portion, and the unevenness of the electromagnetism is further improved. Furthermore, 'the type of reaction chamber caused by the large diameter of the substrate to be processed' is affected by the temperature distribution, etc., due to the temperature distribution, etc., and the plasma density is also Handling & the opposite of the center and the peripheral department will be different. The unevenness of the plasma density causes a difference in the etching rate of the substrate to be processed, and in particular, causes a deterioration in the yield of the 7° member obtained from the peripheral portion of the substrate to be processed. In order to solve this problem, for example, in order to solve this problem, it is known to construct a main surface center portion of a high-frequency electrode using a high-resistance component (Patent Document U. This technology system) The central portion of the main surface of the electrode (electrical destruction contact surface) connected to the side of the high-frequency power source is formed by a high-resistance component such that the electric field intensity of the main surface of the electrode is relatively lower at the center portion of the electrode than the outer peripheral portion of the electrode. In addition, the plasma processing apparatus disclosed in Patent Document 2 embeds a dielectric body in the main surface of the electrode opposed to the processing space, and is radiated to the electric and surface. The high-frequency impedance of the processing space is relatively large at the portion of the electrode, and relatively small at the edge of the electrode. The uniformity of the distribution of the electric field with k south. In addition, in order to improve the edge portion of the substrate to be processed The uniformity of the plasma density distribution,
201130395 自由基密度便會變得不均勻，且晶圓外緣部的電漿密度 亦會變得不均勻。其結果為晶圓中央部處與外緣部處在 電鹱處理的效果上便會產生差異，而難以對晶圓施予均 句的電漿處理。 因此，專利文獻3中，藉由在外側聚焦環形成有環 狀溝槽並使其熱容量減小，可使因來自電漿的熱而造成 外侧聚焦環的溫度急速地上升且易於維持在高溫，藉以 〇 確保晶圓周端部之電漿密度的均勻性，並可去除生產批 次的極初期階段中，附著在聚焦環的沉積物。 專利文獻1 :日本特開2000-323456號公報 專利文獻2:日本特開2004-363552號公報 專利文獻3 :曰本特開2007-67353號公報 然而’如上述專利文獻1、2之高頻放電式的電漿 處理虞置中’利用局電阻組件來構成南頻電極的主面中 〇 心部會有因焦耳熱而造成高頻電功率的消耗(能量耗損） 變多之問題。 又，如專利文獻1、2般，將介電體埋入電極主面 的技術會有電極主面上的阻抗分佈特性因介電體的材 質及形狀輪廓而被固定，以及針對各式各樣製程或製程 條件的改變而無法彈性地對應之問題。 、、又L專利文獻3係藉由在外側聚焦環設置有溝槽來 減小熱容量。藉此，藉由短時間内的溫度上升與溫^穩 201130395 疋4來確保晶圓周緣部之電漿密度分佈的均勻性。 θ:，晶圓周端部之電漿密度分佈的均勻性，不僅 =必f確保溫度的穩定性，亦須將晶圓周緣部的電場分 布调正成所欲電場分佈、電場強度。 +埶ϊ =文獻3係藉由在外側聚焦環設置有溝槽並減 、&,、’、'谷星來確保溫度的穩定性。然而，上述溫度穩定所 之電漿密度分布的均勻性係在溫度穩定為止的期 曰二保電㈣度分怖的均勻性，並非將電場分佈調整成 =欲電場分佈、電場強度。因此專利文獻3無法解決所 明的調整所欲電場分佈之課題。 、、再者，專利文獻3係藉由在外侧聚焦環設置有溝槽 小其熱容量來確保電漿密度分布的均勻性。然而曰， 右奴使晶®端部的侧率或沈積率為所欲值，則必 部之周邊上面的電場分佈調整成所欲值，然而、專 W文獻3並無法解決上述問題。 【發明内容】 本發明係4監於上述習知技術的問題點所發明直 目的在於提供一種藉由將晶圓周端部的電場分二 ，所欲分佈，從而可實現電漿處理之均句性與 = 鬲之電漿處理用環狀組件及電漿處理裝置。 ▽捉 為解決上述問題之申請專利範圍第j項 =重電漿處則圓環狀組件，係以將被施予f漿處= 处理基板的周緣圍繞之型態所配置，其特、. 啦> 於.將 201130395 產生有電漿之電襞產生空間的電場分佈調 場分佈之至少1個環狀溝槽，細成於該輕砍電 側之相反_面。因為藉由將環狀溝槽形成於圍= 予電漿處理之被處理基板周緣的圓環狀組件，則 被處理基板周緣部的電場分佈。 、σ改變 申請專利範圍第2項之發明為中請專利範圍第 之«處理用圓環狀組件，其中該溝槽係形成於内= 0 緣部。因城由將溝槽形成於與被處理基板相接之圓产 狀組件的内側’則可更良好地調整被處理基板周緣部= 電場分佈。 申凊專利範圍苐3項之發明為申請專利範圍第1戋 2項之電漿處理用圓環狀組件，其中係藉由該溝槽的^ 狀來將阻抗調整成所欲值。因為藉由溝槽的形狀來使其 阻抗改變，則藉此可調整電場分佈。 申請專利範圍第4項之發明為申請專利範圍第j戋 2項之電漿處理用圓環狀組件，其中該溝槽係從徑向内 〇 側端部而以特定寬度形成為至少其寬度的30%以内。因 為若將溝槽形成在自起於與被處理基板相接之内側端 部起相距超過圓環狀組件寬度的3〇%之部位處，則難以 調整被處理基板周緣部的電場分佈。 申請專利範圍第5項之發明為申請專利範圍第1或 2項之電漿處理用圓環狀組件，其中該溝槽係從徑向内 側端部而以特定寬度形成為其寬度的8〇%以内。因為若 將溝槽形成在自起於與被處理基板相接之内侧端部起 9 201130395 相距超過圓環狀組件寬度的80%之部位處，則對被處理 基板周緣部的電場分佈所造成的影響較少。 申請專利範圍第6項之發明為申請專利範圍第i或 2項之電漿處理用圓環狀組件，其中該溝槽的深度至少 ^圓環狀組件厚度的70%以内。因為當將溝槽形成於圓 環狀組件内部時，若其深度（將圓環狀組件水平地設置 後之垂直方向的長度)超過圓環狀組件厚度的7〇%時， 則會因圓環狀組件之電漿衝擊所造成的摩耗而使其壽 命縮短。 〇 申請專利範圍第7項之發明為申請專利範圍第1或 2項之電漿處理用圓環狀組件，其係由石英、碳、矽、 砍兔化物及陶免材料的至少其中一者所形成。 —申請專利範圍第8之發明為一種電漿處理裝置，係 藉由產生於處理室之電漿來對被處理基板施予'^電漿處 理，其具有：處理容器，係包含有可將内部保持於真空 之該處理室；載置台，係於該處理室載置該被處理其 板’並兼作為下部電極；ϋ環狀轉，係於 ^ , 以將該被處理基板的周緣圍繞之型態所配薏上=電 ， 極，係對向該下部電極而配置於其上方；供電體，係對 5亥載置台供給南頻電功率；其中於該圓環狀龟 將產 生有電漿之電漿產生空間的電場分佈調签成所欲分佈 之至少1個環狀溝槽，係形成於該電漿產生窆間侧之相 反側的面。因為藉由將環狀溝槽形成於圍繞被二予電喂 處理之被處理基板周緣的圓環狀組件，則可改變被處= 10 201130395 基板周緣部的電場分佈。 申請專利範圍第9之發明為申請專利範園第8項之 電漿處理裝置，其中該溝槽係形成於内側周緣部。因為 藉由將溝槽形成於與被處理基板相接之圓環狀組件的 内側，則可更良好地調整被處理基板周緣部的電場分 佈。 申請專利範圍第10之發明為申請專利範圍第8或 Ο 9項之電漿處理裝置，其中係藉由該溝槽的形狀來將該 圓環狀組件的阻抗調整成所欲值。因為藉由溝槽的形狀 來使其阻抗改變，則藉此可調整電場分佈。201130395 The density of free radicals will become uneven and the plasma density at the outer edge of the wafer will become uneven. As a result, there is a difference in the effect of the electric discharge treatment at the central portion and the outer edge portion of the wafer, and it is difficult to apply a uniform plasma treatment to the wafer. Therefore, in Patent Document 3, by forming an annular groove in the outer focus ring and reducing the heat capacity, the temperature of the outer focus ring is rapidly increased due to heat from the plasma, and it is easy to maintain the temperature. This ensures uniformity of the plasma density at the end of the wafer and removes deposits attached to the focus ring during the very early stages of the production batch. Patent Document 1: Japanese Laid-Open Patent Publication No. 2000-323552 (Patent Document No. JP-A-2004-673552). In the plasma processing apparatus, the problem that the high-frequency electric power consumption (energy loss) is increased due to Joule heat due to the use of the local resistance component to constitute the main surface of the south-frequency electrode. Further, as in Patent Documents 1 and 2, the technique of embedding a dielectric body on the main surface of the electrode has the impedance distribution characteristic of the main surface of the electrode being fixed by the material and shape contour of the dielectric body, and for various types of materials. A change in process or process conditions does not allow for an elastic response. Further, Patent Document 3 reduces the heat capacity by providing a groove in the outer focus ring. Thereby, the uniformity of the plasma density distribution at the peripheral portion of the wafer is ensured by the temperature rise in a short time and the temperature stabilization 201130395 疋4. θ: The uniformity of the plasma density distribution at the peripheral end of the wafer not only determines the stability of the temperature, but also adjusts the electric field distribution around the wafer to the desired electric field distribution and electric field strength. +埶ϊ = Document 3 ensures temperature stability by providing grooves on the outer focus ring and subtracting &, ', 'valley. However, the uniformity of the plasma density distribution of the above-mentioned temperature stabilization is the uniformity of the period of temperature stability until the temperature is stabilized, and the electric field distribution is not adjusted to the electric field distribution and the electric field intensity. Therefore, Patent Document 3 cannot solve the problem of adjusting the desired electric field distribution. Further, Patent Document 3 ensures the uniformity of the plasma density distribution by providing a groove with a small heat capacity in the outer focus ring. However, the side rate or deposition rate of the end of the right slave crystal is the desired value, and the electric field distribution on the periphery of the necessary portion is adjusted to a desired value. However, the above-mentioned problem cannot be solved by the literature 3. SUMMARY OF THE INVENTION The present invention is directed to the problem of the above-mentioned prior art, and aims to provide a uniformity of plasma processing by dividing the electric field at the peripheral end of the wafer into two. And the ring assembly and plasma processing device for plasma treatment.申请 为 为 为 为 为 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = > At least one annular groove of the electric field distribution field-distributing distribution of the 201130395 generating electromagnet generating space is formed on the opposite side of the light-cut electric side. Since the annular groove is formed in an annular assembly surrounding the periphery of the substrate to be treated by the plasma treatment, the electric field distribution at the peripheral portion of the substrate to be processed is obtained. , σ change The invention of claim 2 is the invention of the patent scope of the invention, wherein the groove is formed in the inner = 0 edge portion. Since the groove is formed on the inner side of the circular member that is in contact with the substrate to be processed, the peripheral portion of the substrate to be processed = electric field distribution can be more favorably adjusted. The invention of claim 3 is the annular assembly for plasma processing according to the first aspect of the patent application, wherein the impedance is adjusted to a desired value by the shape of the groove. Since the impedance is changed by the shape of the groove, the electric field distribution can be adjusted thereby. The invention of claim 4 is the annular assembly for plasma processing according to the scope of the invention, wherein the groove is formed from a radially inner side end portion and has a specific width at least a width thereof. Within 30%. Since the groove is formed at a portion which is spaced apart from the inner end portion in contact with the substrate to be processed by more than 3% of the width of the annular member, it is difficult to adjust the electric field distribution at the peripheral portion of the substrate to be processed. The invention of claim 5 is the annular assembly for plasma processing according to claim 1 or 2, wherein the groove is formed from a radially inner end portion by a specific width to be 8〇% of its width. Within. This is because if the groove is formed at a portion that is more than 80% of the width of the annular member from the inner end portion that is in contact with the substrate to be processed, the electric field distribution on the peripheral portion of the substrate to be processed is caused. Less impact. The invention of claim 6 is the annular assembly for plasma processing of claim i or 2, wherein the groove has a depth of at least 70% of the thickness of the annular member. Because when the groove is formed inside the annular component, if the depth (the length in the vertical direction after the annular component is horizontally disposed) exceeds 7〇% of the thickness of the annular component, the ring is The wear caused by the plasma impact of the component is shortened. The invention of claim 7 is the ring assembly for plasma treatment according to claim 1 or 2, which is composed of at least one of quartz, carbon, bismuth, chopped rabbit and pottery material. form. - The invention of claim 8 is a plasma processing apparatus which applies a plasma treatment to a substrate to be processed by a plasma generated in a processing chamber, which has a processing container containing an internal The processing chamber is held in a vacuum; the mounting table is placed on the processing chamber to mount the processed plate 'and serves as a lower electrode; and the crucible is rotated to be attached to the periphery of the substrate to be processed. In the state, the electric power is connected to the lower electrode, and the power supply body supplies the south frequency electric power to the 5 hai loading platform; wherein the annular turtle will generate electricity with plasma. The electric field distribution of the slurry generating space is adjusted to at least one annular groove to be distributed, and is formed on a surface on the opposite side of the inter-turn side of the plasma. Since the annular groove is formed in an annular assembly surrounding the periphery of the substrate to be processed which is subjected to the electric feeding process, the electric field distribution at the peripheral portion of the substrate can be changed. The invention of claim 9 is the plasma processing apparatus of claim 8, wherein the groove is formed on the inner peripheral portion. Since the groove is formed on the inner side of the annular member that is in contact with the substrate to be processed, the electric field distribution of the peripheral portion of the substrate to be processed can be more favorably adjusted. The invention of claim 10 is the plasma processing apparatus of claim 8 or claim 9, wherein the impedance of the annular member is adjusted to a desired value by the shape of the groove. Since the impedance is changed by the shape of the groove, the electric field distribution can be adjusted thereby.
申清專利範圍第u之發明為申請專利範圍第8或9 項之電漿處理裝置，其中該溝槽係從徑向内侧端部而以 才寸疋寬度开>成為至少該圓環狀組件寬度的以内。因 為若將溝槽形成在自起於與被處理基板相接之内側端 部起相距超過圓環狀組件寬度的3〇%之部位處，則難以 调整被處理基板周緣部的電場分佈。 甲明寻利乾圍第12之發明為申請專利範圍第8或 9項^電漿處理裝置’其巾賴槽餘徑向_端部而 =特疋寬度形成為該圓環狀組件寬度的·以内。因為 將溝槽形成在自起於與被處理基板相接之内側端部 =距超過圓環狀組件寬度的嶋之部位處，則對被處 '"板周緣部的電場分佈所造成的影響較少。 申呀專利範圍第13之發明為申請專利範圍第8 J、之電漿處理裝置，其中該溝槽的深度至少為該圓環 201130395 狀組^厚度的70%以内。因為當將溝槽形成於圓環狀組 件内邻時，若其深度(將圓環狀組件水平地設置後之垂 直2向的長度)超過圓環狀組件厚度的70%時，則會因 圓裱狀組件之電漿衝擊所造成的摩耗而使其壽命縮短。 申凊專利範圍第14之發明為申請專利範圍第8或 9項之電漿處理裝置，其中該圓環狀組件係由石英、碳、 夕夕兔化物及陶竟材料的至少其中一者所形成。 本發明之電漿處理裝置藉由調節晶圓周緣部的電 場分佈，可容易且自由地調節晶圓周緣的蝕刻率或沈積 率’並提高電漿處理的均句性或良率。 【實施方式】 以下，針對將本發明電漿處理裝置使用於蝕刻裝置 的一實施形態，參照圖式來加以說明。然而，本發明並 未限定於此實施形態。 圖1係顯示本發明一實施形態之電漿處理裝置j的 整體概略結構。該電漿處理裝置係包含有圓筒形反應室 之結構’該圓筒形反應室係具有可將例如由鋁、不鑛鋼 等所構成的内部氣密地密閉之處理室。此處雖係構成為 下部雙頻施加式的電容耦合型電漿處理裝置，但本發明 並未限定於此，而亦可為上下雙頻施加式或單頻施加式 的電漿處理裝置。 處理室水平設置有用以支撐被處理基板(例如半導 體晶圓（以下稱為晶圓）15)之載置台2。載置台2係由紹 12 201130395 、·導電性材料所構成’並兼作為R 面為了以靜電吸附力來保持晶圓15，°。載置台2上 介電體所構成的靜電夾具16。靜電失氣而毁置有陶瓷等 導電體，例如銅、鎢等導電膜所構2具16内部埋入有 载置台2係被支撐於陶瓷等絕緣性筒的内部電極π。 保持部3係被支撐於處理室的筒狀I 持部3。筒狀 Ο Ο 持部3的上面係設置有環狀地圍繞，=4，而筒狀保 焦環5。聚焦環5外侧設置有圓環狀覆^的上面之聚 靜電夾具16係藉由與晶圓15 二衣25。 而作為用以調節晶圓15的溫度之熱交交:奥圓 的外側設置有魏處理關環狀組件的盆中之: =環5。本實施形態中，雖聚焦環5為單:型^亦 =分割為外侧聚焦環與内側聚焦環之2分割型者。聚 ‘、、、电5係配合晶圓15而使用例如Si、Sie、[、&〇 材料所構成者。 、、1 2等 〃處理室的侧壁與筒狀支撐部4之間形成有環狀排 乳通道6，氣通道6的人口或巾途歧有環狀隔板 7。排氣通道6的底部係透過排氣管8而連接有排氣裝 置9。排氣裝置9係具有渦輪分子幫浦等真空幫浦，可 將處理室内的電漿處理空間減壓至所欲真空度。處理室 的侧壁外裝設有用以開閉晶圓15的搬出入口 1〇之閘闕 11 〇 載置台2的背面（下面）及上部電極21係連接有自匹 配益13(13a、13b)的輸出私子延伸之圓柱形或圓筒形供 13 電锋14 ί ° 凳铢14而带门，心’、3、1213則係透過匹配器13及供 係由例如制★ 連接至载置台2及上部電極21。供電棒14 論铜或鋁等導體所構成。 2的‘ 小调田王要對使電漿產生在载置 辞。另^方有貢獻之較高頻率，例如6〇MHz的第ι古 4刮截:：，第2高頻電源既係輪出主要對將離； Μ第置二2上的晶圓15有貢獻之較低頻率，例： 向頻。整合器13a係用以在第1高頻電源 與負荷(主要為電極、電漿、反應室)側的 % 1Ί Γ寻整合性’匹配器13 b係用以在第2高頻電 靜略勺阻抗與負荷側的阻抗之間取得整合性。 電核17$失具16係將片狀或網狀導電體所構成的内部 〜體地固介電體中者，而—體地形成或 處理宝从載内部電極17係電連接於 *所°又置之直流電源及供電線(例如被覆線），藉 由直流電源所施加之直流電壓，而可以庫倫力來將晶圓曰 15吸者保持於靜電爽具16。 處理室的頂部設置有平行地對向於載置台2之上 部电極21。上部電極21係形成為内部呈中空構造之圓 板狀’，其:面側設置有多個氣體喷出孔22而形成喷淋 頭。然後H域體導人# 23來將處理氣體供給部所供 給之蝕刻氣體導入至上部電極21内的中空部分，並從 該中空部分經由氣體喷出口 22而均勻地分散並供給至 Ϊ4 201130395 處理室。又，上部電極21係由例如Si或SiC等材料所 構成。 靜電夾具16與晶圓15的内面之間係經由氣體供給 管24而供給有來自傳熱氣體供給部（未圖示）的傳熱氣 體(例如He氣），該傳熱氣體會促進靜電夾具16，亦即 載置台2與晶圓15之間的熱傳導。 該電漿處理裝置的主要特徵在於係使用形成有圓 0 環狀溝槽之聚焦環5，來獲得可形成對晶圓15的特性 ^ 或各種電漿處理製程最適合的電場強度及分佈之阻抗 特性。 圖2係顯示在過去電漿處理中所使用之習知型聚 焦環（圖2a)與本發明一實施形態之溝槽形成型聚焦環 (圖2b)的剖面形狀之圖式。圖2所示之聚焦環皆為單一 型（亦稱為一體成型）聚焦環。然而，本發明不限於單一 型，而亦可使用如分割為例如内侧聚焦環與外側聚焦環 2者之分割型聚焦環中的其中1個環或2個環。聚焦環 Ο 的材料可由例如與晶圓15相同的材料（Si)，或石英、 碳、矽碳化物、陶瓷材料（氧化釔(γ2〇3)或二氧化矽）等 中任一者所形成。聚焦環5係被載置於用以支撐晶圓 15的周緣端部之靜電夾具16上。 關於本發明一實施形態之溝槽形成型聚焦環，利用 圖2(b)來加以說明。圖2(b)所示之溝槽形成型聚焦環係 於與靜電夾具16接觸面（聚焦環的内面）側處形成有溝 槽51。該溝槽較佳係形成於聚焦環的内面侧。因為當 15 201130395 形成有溝槽的面側暴露在電漿離子中時，會因其衝擊而 使得溝槽摩耗，且溝槽形狀會產生變化。又，因為利用 切削加工等來形成溝槽時，相較於其他的面，會因電漿 離子的衝擊而有使得塵埃發生率變高之可能性。 圖2(b)所示之溝槽51形狀的深度（將聚焦環5水平 地設置後之垂直方向的長度)較佳為聚焦環厚度的70% 左右，更佳為50%以下。因為當使深度超過70%時，會 因電漿衝擊所造成之聚焦環5的摩耗而使其壽命縮 短。又，為確保聚焦環的硬度，深度較佳亦為70%以内。 又，圖2(b)所示之溝槽形成型聚焦環的溝槽51的深度 大約形成為〇.4mm。此為聚焦環5厚度（約3.6mm)的大 約 1/9。 又，溝槽51形狀的徑向寬度較佳為聚焦環徑向寬 度的80%以内。例如，圖2(b)所示之溝槽形成型聚焦環 的溝槽51的寬度大約形成為40mm。此相當於聚焦環5 寬度（100mm)的 2/5(40%)。 又，溝槽51較佳係自晶圓15設置侧的端部或聚焦 環徑向寬度的30%以内的部位來形成。在不會受到離子 衝擊的範圍内，藉由儘可能地自其端部來形成，則可更 容易進行晶圓15面上之電場分佈的調整。 以上，溝槽51的形狀為了使晶圓15面上的電場分 佈為最佳分佈，只要以所欲形狀來形成即可。圖3係例 示本發明溝槽形狀之圖式。圖3(a)係顯示自聚焦環5的 内側端部附近來形成半橢圓形形狀的溝槽51的情況之 16 201130395 溝槽形狀的圖式。又，圖3 (b)係顯示於内侧端部形成有 梯形溝槽51，或於其徑向外侧形成有四角溝槽51的情 況之溝槽形狀的圖式。再者，圖3(c)係顯示於聚焦環5 内側連續形成有3個圓形中空溝槽51的情況之圖式。 由於本發明係在聚焦環形成有溝槽來獲得所欲電場分 佈，因此只要配合所欲電場分佈來形成最適合的溝槽即 可0 ^ 【實施例】 (實施例1) 準備2個圖2(b)所示之聚焦環5來作為組裝在電漿 處理裝置1之聚焦環。將熱傳導率為1W之傳熱片幾乎 無間隙地填入至其中一個聚焦環的溝槽51。以下在本 說明書中將其稱為溝槽形成聚焦環1W型。又，將熱傳 導率為17W之傳熱片幾乎無間隙地填入至另一個聚焦 環的溝槽51。以下在本說明書中將其稱為溝槽形成聚 焦環17W型。然後，準備圖2(a)所示之習知型聚焦環 〇 來作為該等的比較例。以下在本說明書中將其稱為習知 型聚焦環。 接下來，分別準備3組直徑300mm之表面形成有 氧化膜的空白晶圓（blanket wafer)(以下稱為晶圓Ox)， 與直徑300mm之表面形有氮化物的空白晶圓（以下稱為 晶圓Ni)。然後，供給C4F6/Ar/02(18/225n〇)所構成的 處理氣體，並在該等空白晶圓（晶圓Ox，晶圓Ni)設置 習知型聚焦環、溝槽形成聚焦環1W型及溝槽形成聚焦 17 201130395 :歲理1而對曰曰圓〇X與晶圓Ni分別施予60秒的電 此時上部電極的溫度/處理室的壁面溫度/ 靜电夾具的底面溫度為6(rc/6(rc/45cCe t述電漿處理條件下’圖4為晶圓〇x的蝕刻率， 圖f :、、、顯不晶圓Ni的韻刻率之圖表。又，圖4及圖5 所：ίΪ的橫軸係以其，，點來表示晶圓的中心點，而 以4米卓位來表示從該處往徑向右側150mm，往徑向 左側150mm的距離。又，縱軸為氧化膜的餘刻率⑽/ 分）或氮化物的餘刻率(nm/分）。 如圖4所示，於晶圓〇χ設置有習知型聚焦環並施 予電漿處料之氧化朗㈣率，相躲晶圓中心部分 的姓刻率約為l87nm/分，愈往端部其银刻率愈大，而 在距離晶圓端部約30mm的部位處達到最大（約i95nm/ 分）。然後從該部位處到最端部為止，則為大致相同的 餘刻率。 相對於此，設置有溝槽形成聚焦環lw型並被施予 電漿處理之晶圓Ox雖在晶圓中心部處與習知型為大致 相同的蝕刻率（約187nm/分），但愈往端部則蝕刻率愈 大’而在距離晶圓端部約30mm的部位處達約197nm/ 分，然後從該部位處到最端部蝕刻率會急速上升，最端 部的Ί虫刻率約為218nm/分。 又，溝槽形成伞焦17 W型餘刻率的特性係斑圖4 所示之溝槽形成聚焦環1W型的特性大致相同。~ 圖5係顯示於晶圓Ni設置有習知型聚焦環，並在 18 201130395 上述條件下施予電漿處理時之氮化物的蝕刻率之圖 表。如圖5所示，晶圓中心部分的姓刻率約為-2nm/分， 此係表不晶圓中心部處沉積有CxFy。又，愈往端部則名虫 刻率愈大而成為負值(CxFy的沉積率變大），從距離晶圓 端部約50mm的部位處到最端部而沈積率（堆積）會變 大。 相對於此，設置有溝槽形成聚焦環1W型並被施予 0 電漿處理之晶圓Ni在晶圓中心部處雖較習知型為稍大 之負蝕刻率（約-4nm/分），但會有愈往端部則從負到正之 特性。亦即，沉積與I虫刻會在距離晶圓端部約25mm的 部位處相對抗，而顯示了從該部位處欲往晶圓端部則蝕 刻率會上升之特性。 雖然溝槽形成聚焦環17W型之晶圓Ni的蝕刻库特 性在蝕刻率的值上有差異，但其特性本身係與溝槽形成 聚焦環1W型大致相同。 由上述情事可明瞭以下事項。蝕刻特性不會因埋入 Ο 於溝槽51之傳熱片的熱傳導率不同而產生大的差異。 此係因為在聚焦環5形成有溝槽51 —事所造成的影響 並非起因於熱容量的變化，而是因為聚焦環5阻抗的變 化而使得其周邊電場分佈發生改變的緣故。其結果為電 漿（電荷）對晶圓15的衝擊強度會改變。因此，配合施予 電漿處理的材料，為了獲得所欲電場分佈，只要改變溝 槽51的形狀的話即可在所欲部位形成所欲電場分佈。 藉此可使對晶圓15所施予之電漿處理均勻化。 19 201130395 (實施例2) 接下來關於濺鍍率，與實施例1同樣地，準備溝槽 形成聚焦環1W型、溝槽形成聚焦環17W型2種聚焦 環來作為組裝至電漿處理裝置1之聚焦環5，並準備習 知型聚焦環來作為該等的比較例以調查濺鍍率的特性。 與實施例1同樣地準備3片直徑300mm的空白晶 圓。然後，使電漿處理室減壓至35mTorr，供給 Ar/02(1225/15)所構成的處理氣體，並在空白晶圓設置 習知型聚焦環、溝槽形成聚焦環1W型與溝槽形成聚焦 環17W型，而施予60秒的電漿處理。又，此時上部電 極的溫度/處理室的壁面溫度/靜電夾具的底面溫度為 60°C/60°C/45°C。 圖6係顯示在上述電漿處理條件下，上述3種聚焦 環的藏鑛率特性之圖表。又，圖6所示圖表的橫軸係以 其“0”點來表示晶圓的中心點，而以釐米單位來表示從 該處往徑向右側150mm，往徑向左側150mm的距離。 又，縱軸的濺鍍率單位為nm/分。 如圖6(a)所示，設置習知型聚焦環並施予電漿處理 時之空白晶圓的濺鑛率在晶圓中心部分約為15nm/分。 愈往晶圓端部則錢鍍率愈小，而在距離晶圓端部約 40mm的部位處起急速減少，最端部的濺鍍率約為 13nm/分。 相對於此，設置溝槽形成聚焦環1W型並施予電漿 處理之空白晶圓的濺鍍率在其中心部約為17nm/分。雖 20 201130395 然距離晶圓端部約4〇mm的部位處起濺鍍率係漸漸減 少，但從距離晶圓端部l〇mm的部位處起到最端部則係 轉變成增加的傾向’最端部的濺鑛率約為19nm/分，其 顯示了與習知型聚焦環完全相反的特性。 溝槽形成聚焦環17W型濺鍍率的特性係與溝槽形 成水焦每1W型大致相同。 圖6(b)係將圖6(a)所示之3種聚焦環的濺鍍率正規 Ο 化之圖表。如圖6(b)所示，因埋入於溝槽51之傳熱片 的熱傳導率差異對賤鍍率特性來說幾乎沒有差異。由以 上可說形成在聚焦環5之溝槽51與其說是會使熱容量 改變，不如說是會使聚焦環5的阻抗改變，藉此而使得 其周圍的電場分佈改變。其結果便推測為係因電漿的衝 擊強度改變而使得濺鏟率改變。 (實施例3) 接下來，關於沈積率，與實施例i、2同樣地，準 備溝_絲焦環1W $、溝卿成聚焦環 17W 型 2 種聚焦環來作為喊至㈣處縣置丨之聚焦環5，並 钱習知型聚焦環來作為該等的比較例來調查 的特性。 準備3片直住30〇m功的空白晶圓。然後，使電聚 ^里室減駐35mTOT，供給C4F6/M18/1225)所構成的 f理氣體’並在空白晶㈣置習知型聚焦環、溝槽形成 ♦焦％1W型與溝槽形成聚焦環17WS，而施予60秒 9书水處理。又’此時上部電極的溫度/處理室的壁面 201130395 溫度/靜電夾具的底面溫度為6〇〇C/6(Tc：M5t：。 圖7係顯示在上述電漿處理條件下，在空白晶圓設 置習知型、溝槽形成1W型、溝槽形成17W型之3種 忒焦％a守的沈積率特性之圖表。又，圖7所示圖表的橫 軸係以其〇點來表示晶圓的中心點，而以釐米單位來 表不攸该處往徑向右側15()職，往徑向左侧150mm的 距離又，縱軸的沈積率單位為nm/分。 日产:圖:⑷所不’設置習知型聚焦環並施予電漿處理 ^ ^ 日日圓的’尤積率在晶圓中心部分約為80nm/分。 而^則沈積率漸增’而在從距離晶圓端部約50mm 、。立处起急速增加，最端部的沈積率約為105nm/分。 相對於!If，‘ lw WJ4, / 在空白晶圓外周設置溝槽形成聚焦環 羽|靶予電槳處理時，雖然其_心部的沈積率係與 白^'大致同為約80nm/分，但從距離晶圓端部約 5|0mm=部位麵，沈積率係與 習知型相反而為漸漸減 少’其最端部的沈積率約為7〇nm/分。 一 /冓^#开乂成艰焦環17w型的沈積率特性如圖7⑻所 丁可'•兒疋與溝槽形成聚焦環1W型大致相同。 圖7(b)係將圖7(a)所示之3種聚㈣的沈積率正規 ^之圖表。由圖7(b)可知，與實施例1、實施例2同樣 ☆ Λ 口埋入於'冓槽51之傳熱片的熱傳導率差異對沈積 生來料乎沒有差異。由以上可說形成在聚焦環5 之槽51與其說是會使熱容量改變，不如說是會使聚 焦％ 5的叫改變，藉此岐得其周圍的電場分佈改 22 201130395The invention of claim 5 is the plasma processing apparatus of claim 8 or 9, wherein the groove is opened from the radially inner end portion and is at least the annular assembly. Within the width. Since the groove is formed at a portion which is spaced apart from the inner end portion in contact with the substrate to be processed by more than 3% of the width of the annular member, it is difficult to adjust the electric field distribution at the peripheral portion of the substrate to be processed. The invention of the No. 12 of the company is the eighth or ninth item of the patent application. The plasma processing device 'there is a radial _ end portion of the towel groove and the width of the special component is formed as the width of the annular component. Within. Since the groove is formed at a portion from the inner end portion that is in contact with the substrate to be processed = the ridge beyond the width of the annular member, the influence on the electric field distribution at the periphery of the plate is "" less. The invention of claim 13 is the plasma processing apparatus of claim 8, wherein the depth of the groove is at least 70% of the thickness of the ring of the 201130395 group. Because when the groove is formed in the inner side of the annular component, if the depth (the length of the vertical two directions after the annular component is horizontally disposed) exceeds 70% of the thickness of the annular component, The wear caused by the plasma impact of the braided component shortens its life. The invention of claim 14 is the plasma processing apparatus of claim 8 or 9, wherein the annular component is formed by at least one of quartz, carbon, ceramide and ceramic materials. . The plasma processing apparatus of the present invention can easily and freely adjust the etching rate or deposition rate of the periphery of the wafer by adjusting the electric field distribution at the peripheral portion of the wafer and improve the uniformity or yield of the plasma treatment. [Embodiment] Hereinafter, an embodiment in which the plasma processing apparatus of the present invention is used in an etching apparatus will be described with reference to the drawings. However, the present invention is not limited to this embodiment. Fig. 1 is a view showing the overall schematic configuration of a plasma processing apparatus j according to an embodiment of the present invention. The plasma processing apparatus includes a structure of a cylindrical reaction chamber. The cylindrical reaction chamber has a processing chamber which can hermetically seal the inside of, for example, aluminum or non-mineral steel. Although the present invention is not limited to this, it is a low-frequency application type or a single-frequency application type plasma processing apparatus. The processing chamber is horizontally disposed to support the mounting table 2 of the substrate to be processed (e.g., a semiconductor wafer (hereinafter referred to as wafer) 15). The mounting table 2 is composed of a conductive material and is also used as the R surface to hold the wafer 15 by electrostatic attraction. The electrostatic chuck 16 composed of a dielectric body on the mounting table 2 is mounted. When the static electricity is lost, a conductor such as ceramic is ruined. For example, a conductive film such as copper or tungsten is embedded in the internal electrode π in which the mounting table 2 is supported by an insulating cylinder such as ceramic. The holding portion 3 is supported by the cylindrical I holding portion 3 of the processing chamber. The upper surface of the cylindrical cymbal holding portion 3 is provided with an annular ring-shaped, = 4, and cylindrical retaining ring 5. The polyelectrostatic chuck 16 on the outer side of the focus ring 5 provided with an annular cover is attached to the wafer 15 by a second coat 25 . As a heat transfer for adjusting the temperature of the wafer 15, the outer side of the arc is provided with a pot of the Wei-treated ring assembly: = ring 5. In the present embodiment, the focus ring 5 is a single type: the type is divided into two types of the outer focus ring and the inner focus ring. For example, Si, Sie, [, & 〇 materials are used to mix the ‘, 、, and electric 5 layers. An annular milk discharge passage 6 is formed between the side wall of the processing chamber and the cylindrical support portion 4, and the annular passage 7 is defined by the population of the air passage 6. The bottom of the exhaust passage 6 is connected to the exhaust unit 9 through the exhaust pipe 8. The exhaust unit 9 has a vacuum pump such as a turbo molecular pump to depressurize the plasma processing space in the processing chamber to a desired degree of vacuum. The side wall of the processing chamber is provided with a gate 11 for opening and closing the loading and unloading port 1 of the wafer 15 . The back surface (lower surface) of the mounting table 2 and the output of the self-matching benefit 13 (13a, 13b) are connected to the upper electrode 21 The private extension of the cylindrical or cylindrical shape for the 13 electric front 14 ί ° stool 铢 14 with the door, the heart ', 3, 1213 through the matching device 13 and the supply system, for example, connected to the mounting table 2 and the upper part Electrode 21. The power supply rod 14 is constructed of a conductor such as copper or aluminum. 2's ‘小调田王 is going to make the plasma produce the words. The higher frequencies that are contributed by the other side, such as the 6 〇MHz ι 古 4 scraping::, the second high-frequency power supply is both the main pair will be off; Μ the second 2 on the wafer 15 contribution The lower frequency, for example: the frequency. The integrator 13a is used to find the integration 'matcher 13 b' on the side of the first high-frequency power source and load (mainly electrode, plasma, reaction chamber) for the second high-frequency static electricity scoop Integration between impedance and impedance on the load side. The electric core 17$ is missing 16 of the inner-body solid dielectric formed by the sheet or mesh conductor, and the body is formed or processed to be electrically connected to the internal electrode 17 from the carrier. The DC power supply and the power supply line (for example, the covered wire) can be used to hold the wafer 吸 15 absorber in the static electricity cooler 16 by the DC voltage applied by the DC power source. The top of the processing chamber is provided to face the upper electrode 21 in parallel with the mounting table 2. The upper electrode 21 is formed in a circular plate shape having a hollow structure inside, and a plurality of gas ejection holes 22 are provided on the surface side to form a shower head. Then, the H-domain body guide #23 introduces the etching gas supplied from the processing gas supply unit into the hollow portion in the upper electrode 21, and uniformly disperses and supplies it from the hollow portion through the gas discharge port 22 to the Ϊ4 201130395 processing chamber. . Further, the upper electrode 21 is made of a material such as Si or SiC. A heat transfer gas (for example, He gas) from a heat transfer gas supply unit (not shown) is supplied between the electrostatic chuck 16 and the inner surface of the wafer 15 via the gas supply pipe 24, and the heat transfer gas promotes the electrostatic chuck 16 That is, heat conduction between the mounting table 2 and the wafer 15. The main feature of the plasma processing apparatus is to use a focus ring 5 formed with a circular circular groove to obtain an electric field strength and distribution impedance which can form a characteristic for the wafer 15 or various plasma processing processes. characteristic. Fig. 2 is a view showing a sectional shape of a conventional focusing ring (Fig. 2a) used in the past plasma processing and a groove forming type focusing ring (Fig. 2b) according to an embodiment of the present invention. The focus rings shown in Figure 2 are all single (also known as integral) focus rings. However, the present invention is not limited to a single type, and one or two of the split type focus rings divided into, for example, the inner focus ring and the outer focus ring 2 may be used. The material of the focus ring 可由 can be formed of, for example, the same material (Si) as the wafer 15, or quartz, carbon, tantalum carbide, ceramic material (yttrium oxide (γ2〇3) or cerium oxide). The focus ring 5 is placed on the electrostatic chuck 16 for supporting the peripheral end of the wafer 15. A groove forming type focus ring according to an embodiment of the present invention will be described with reference to Fig. 2(b). The groove forming type focus ring shown in Fig. 2(b) is formed with a groove 51 at the side of the contact surface (the inner surface of the focus ring) of the electrostatic chuck 16. The groove is preferably formed on the inner face side of the focus ring. Because when the surface side of the groove formed by 15 201130395 is exposed to the plasma ions, the groove is worn out due to the impact thereof, and the shape of the groove changes. Further, when the grooves are formed by cutting or the like, the dust generation rate may be increased due to the impact of the plasma ions compared to the other surfaces. The depth of the shape of the groove 51 shown in Fig. 2(b) (the length in the vertical direction after the focus ring 5 is horizontally disposed) is preferably about 70% of the thickness of the focus ring, more preferably 50% or less. Since the depth of the focus ring 5 caused by the plasma impact is shortened when the depth exceeds 70%. Further, in order to secure the hardness of the focus ring, the depth is preferably within 70%. Further, the depth of the groove 51 of the groove forming type focus ring shown in Fig. 2(b) is formed to be approximately 〇4 mm. This is about 1/9 of the thickness of the focus ring 5 (about 3.6 mm). Further, the radial width of the shape of the groove 51 is preferably within 80% of the radial width of the focus ring. For example, the width of the groove 51 of the groove forming type focus ring shown in Fig. 2(b) is formed to be approximately 40 mm. This corresponds to 2/5 (40%) of the width of the focus ring 5 (100 mm). Further, the groove 51 is preferably formed from a portion on the side on which the wafer 15 is disposed or a portion within 30% of the radial width of the focus ring. The adjustment of the electric field distribution on the surface of the wafer 15 can be more easily performed by forming as much as possible from the end portion in the range where the ion impact is not caused. As described above, the shape of the groove 51 may be formed in a desired shape in order to optimally distribute the electric field on the surface of the wafer 15. Fig. 3 is a view showing the groove shape of the present invention. Fig. 3(a) is a view showing a groove shape of a case where a semi-elliptical groove 51 is formed in the vicinity of the inner end portion of the focus ring 5. Further, Fig. 3(b) shows a groove shape in which the trapezoidal groove 51 is formed at the inner end portion or the square groove 51 is formed on the outer side in the radial direction. Further, Fig. 3(c) shows a pattern in which three circular hollow grooves 51 are continuously formed inside the focus ring 5. Since the present invention forms a groove in the focus ring to obtain a desired electric field distribution, it is only necessary to form a suitable groove in accordance with the desired electric field distribution. [Examples] (Example 1) Preparation of 2 FIG. 2 The focus ring 5 shown in (b) is used as a focus ring assembled in the plasma processing apparatus 1. A heat transfer sheet having a thermal conductivity of 1 W was filled into the groove 51 of one of the focus rings with almost no gap. Hereinafter, this is referred to as a groove forming focus ring 1W type in this specification. Further, the heat transfer sheet having a heat conductivity of 17 W was filled into the groove 51 of the other focus ring with almost no gap. Hereinafter, this is referred to as a groove forming focus ring type 17W in this specification. Then, a conventional focus ring shown in Fig. 2(a) is prepared as the comparative example. Hereinafter, this is referred to as a conventional focus ring in this specification. Next, three sets of blank wafers (hereinafter referred to as wafers Ox) having an oxide film formed on the surface of 300 mm in diameter and blank wafers having nitrides on the surface of 300 mm in diameter (hereinafter referred to as crystals) are prepared. Round Ni). Then, a processing gas composed of C4F6/Ar/02 (18/225n〇) is supplied, and a conventional focus ring and a groove forming focus ring 1W type are disposed on the blank wafers (wafer Ox, wafer Ni). And the groove forming focus 17 201130395: The old 1 is applied to the round X and the wafer Ni respectively for 60 seconds. The temperature of the upper electrode / the wall temperature of the processing chamber / the bottom temperature of the electrostatic chuck is 6 ( Rc/6 (rc/45cCe t under the plasma treatment conditions) Figure 4 is the etch rate of the wafer 〇x, Figure f:,, and the graph of the rhyme rate of the non-wafer Ni. Again, Figure 4 and Figure 5: The horizontal axis of the Ϊ is the point of the wafer, and the point is the center point of the wafer, and the distance from the right side is 150mm to the right side and 150mm to the left side of the radial direction. The residual rate of the oxide film (10) / min) or the residual ratio of nitride (nm / min). As shown in Figure 4, a conventional focus ring is placed on the wafer crucible and the plasma is applied. Oxidation rate (four) rate, the name of the center of the wafer is about l87nm / min, the higher the silver engraving rate of the end, and the maximum at about 30mm from the end of the wafer (about i95nm / Minute Then, from the portion to the end portion, the same residual ratio is obtained. On the other hand, the wafer Ox provided with the groove to form the focus ring lw type and subjected to the plasma treatment is in the center of the wafer. The etch rate (about 187 nm/min) is almost the same as that of the conventional type, but the etch rate is higher at the end portion, and is about 197 nm/min at a position about 30 mm from the end of the wafer, and then The etching rate at the end of the part is rapidly increased, and the locust engraving rate at the end is about 218 nm/min. Moreover, the characteristics of the groove forming the 17 W type of the coke are the grooves shown in Fig. 4. The characteristics of the groove forming focus ring 1W type are substantially the same. Fig. 5 is a graph showing the etch rate of the nitride when the wafer Ni is provided with a conventional focus ring and subjected to plasma treatment under the above conditions of 18 201130395. As shown in Fig. 5, the engraving rate of the center portion of the wafer is about -2 nm/min, which indicates that CxFy is deposited at the center of the wafer, and the more the end, the larger the insect rate becomes negative. The value (the deposition rate of CxFy becomes larger), and the deposition rate (stacking) changes from a portion about 50 mm from the end of the wafer to the end. In contrast, a wafer Ni provided with a groove to form a focus ring 1W type and subjected to a plasma treatment is a slightly larger negative etching rate (about -4 nm/) at the center of the wafer. Points), but there will be a characteristic from negative to positive at the end. That is, the deposition and I insects will be opposite at a distance of about 25 mm from the end of the wafer, and it is shown that the deposition from the part is going to the crystal. At the round end, the etching rate is increased. Although the etching property of the groove forming the wafer of the focus ring type 17W is different in the value of the etching rate, the characteristic itself is similar to the groove forming the focus ring 1W type. the same. The following matters can be clarified by the above circumstances. The etching characteristics are not greatly different due to the difference in thermal conductivity of the heat transfer sheets embedded in the grooves 51. This is because the groove 51 is formed in the focus ring 5 - the effect is not caused by a change in the heat capacity, but because the impedance of the focus ring 5 changes, and the surrounding electric field distribution changes. As a result, the impact strength of the plasma (charge) on the wafer 15 changes. Therefore, in order to obtain the desired electric field distribution in accordance with the material to be subjected to the plasma treatment, the desired electric field distribution can be formed at a desired portion by changing the shape of the groove 51. Thereby, the plasma treatment applied to the wafer 15 can be made uniform. 19 201130395 (Embodiment 2) Next, in the same manner as in the first embodiment, a groove forming focus ring 1W type and a groove forming focus ring 17W type focusing ring are prepared as the assembly to the plasma processing apparatus 1 in the same manner as in the first embodiment. The focus ring 5 was focused and a conventional focus ring was prepared as the comparative example to investigate the characteristics of the sputtering rate. Three blank crystal circles having a diameter of 300 mm were prepared in the same manner as in the first embodiment. Then, the plasma processing chamber is decompressed to 35 mTorr, and a processing gas composed of Ar/02 (1225/15) is supplied, and a conventional type focus ring, a groove forming focus ring 1W type and a groove are formed on the blank wafer. Focus ring 17W type, and 60 seconds of plasma treatment. Further, at this time, the temperature of the upper electrode / the wall surface temperature of the processing chamber / the bottom surface temperature of the electrostatic chuck were 60 ° C / 60 ° C / 45 ° C. Fig. 6 is a graph showing the concentration characteristics of the above three kinds of focus rings under the above plasma treatment conditions. Further, the horizontal axis of the graph shown in Fig. 6 indicates the center point of the wafer by its "0" point, and the distance from the portion to the right side of the radial direction of 150 mm and the radial direction to the left side is 150 mm. Further, the sputtering rate unit of the vertical axis is nm/min. As shown in Fig. 6(a), the sputtering rate of the blank wafer when the conventional focus ring is set and subjected to the plasma treatment is about 15 nm/min in the center portion of the wafer. The closer to the end of the wafer, the smaller the rate of money plating, and the sharper decrease at a distance of about 40 mm from the end of the wafer, and the sputtering rate at the end is about 13 nm/min. On the other hand, the sputtering rate of the blank wafer in which the groove was formed to form the focus ring 1W and subjected to plasma treatment was about 17 nm/min at the center portion thereof. Although 20 201130395, the sputtering rate is gradually reduced from the end of the wafer by about 4 mm, but the tendency from the end of the wafer to the end of the wafer is increased to increase. The splash rate at the extreme end is about 19 nm/min, which shows a completely opposite characteristic to the conventional focus ring. The characteristics of the groove forming focus ring type 17W sputtering rate are substantially the same as those of the groove forming water coke per 1W type. Fig. 6(b) is a graph in which the sputtering rates of the three types of focus rings shown in Fig. 6(a) are normalized. As shown in Fig. 6(b), there is almost no difference in the thermal conductivity of the heat transfer sheet buried in the groove 51 with respect to the ruthenium plating rate characteristic. The groove 51 formed in the focus ring 5 can be said to change the heat capacity, as the impedance of the focus ring 5 is changed, whereby the electric field distribution around it is changed. As a result, it was presumed that the shovel rate was changed due to the change in the impact strength of the plasma. (Example 3) Next, as for the deposition rate, in the same manner as in the examples i and 2, two kinds of focus rings of the groove-wire focal length 1W $ and the ditch-forming focus ring 17W were prepared as the shouting to the (four) county. Focusing on the ring 5 and using the conventional focus ring as a characteristic of the comparative examples. Prepare 3 blank wafers that hold 30 〇m work. Then, the electropolymerization chamber is reduced by 35mTOT, and the C4F6/M18/1225) is used to form the f-type gas ', and the blank crystal (four) is placed on the conventional focus ring, the groove is formed, the 焦%1W type and the groove are formed. The ring 17WS is focused and a water treatment of 60 seconds is applied. 'At this time, the temperature of the upper electrode / the wall surface of the processing chamber 201130395 temperature / the bottom surface temperature of the electrostatic chuck is 6 〇〇 C / 6 (Tc: M5t:. Figure 7 shows the blank wafer under the above plasma processing conditions) A graph of deposition rate characteristics of three kinds of 忒%% of the conventional type, the groove forming 1W type, and the groove forming 17W type is set. Further, the horizontal axis of the graph shown in FIG. 7 indicates the wafer by its defect point. The center point, and in centimeters, the table is not to the right side of the radial 15 () position, the distance to the left side of the radial direction 150 mm, and the vertical axis deposition rate unit is nm / min. Nissan: Figure: (4) Do not set a conventional focus ring and apply plasma treatment ^ ^ The Yen's 'special rate is about 80nm/min at the center of the wafer. And ^ is the deposition rate is increasing' and at the distance from the wafer end Approx. 50mm, the position increases rapidly, and the deposition rate at the end is about 105nm/min. Relative to !If, ' lw WJ4, / Set the groove around the blank wafer to form the focus ring feather | Target to the electric paddle treatment At the same time, although the deposition rate of the _ core is approximately 80 nm/min, it is about 5|0 mm = the deposition rate from the end of the wafer. Compared with the conventional type, it is gradually reduced. The deposition rate at the end is about 7〇nm/min. The deposition rate characteristic of the 17w type of the hard ring is as shown in Figure 7(8). • The daughter-in-law is roughly the same as the groove forming focus ring 1W type. Figure 7(b) is a graph showing the deposition rate of the three kinds of poly (four) shown in Figure 7(a). Figure 7(b) shows that Example 1 and Example 2 are the same ☆ The difference in thermal conductivity of the heat transfer sheet embedded in the 'groove 51' is not different from that of the deposited material. It can be said that the groove 51 formed in the focus ring 5 is not so much. Will change the heat capacity, it is better to change the focus of the focus, so that the electric field distribution around it can be changed 22 201130395
Jl。其結果便推測為係因電漿的衝擊強度改 積率改變。 且在聚焦壤形成溝槽， 土改，溝槽城，則可在職部㈣心欲電場分 佈。猎此可在所欲部位將仙率、沈積率_欲值㈣ 本么月不限於電㈣刻裝置，而亦Jl. As a result, it was presumed that the rate of change in the impact strength of the plasma was changed. And in the focus of the soil to form trenches, land reform, trench city, can be distributed in the Ministry of the Ministry (4). Hunting this can be used in the desired part of the rate, deposition rate _ desired value (four) this month is not limited to electricity (four) engraving device, but also
CVD、電漿氧化、電喂难 扣、电水 乳 电水虱化、濺鍍專其他的電漿處理裝 置 本⑧明之被處理基板不限於半導體晶圓，而亦 可為平面顯示㈣之各種基板絲罩、CD基板、印刷 基板等。 ~ 【圖式簡單說明】 圖1係顯示本發明—實施例之電漿處理裝置結 之縱剖面圖。Other plasma processing apparatuses for CVD, plasma oxidation, electric feeding, electric watering, electroplating, and sputtering. The substrate to be processed is not limited to a semiconductor wafer, but may be a substrate of a flat display (4). Silk cover, CD substrate, printed substrate, and the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal sectional view showing the junction of a plasma processing apparatus of the present invention.
變而使得沈 圖2(a)、圖2(b)係習知型聚焦環及溝槽形成型聚隹 极的剖面圖。 圖3(a)〜圖3(c)係例示溝槽形狀之圖式。 圖4係顯示氧化膜的蝕刻率之圖表。 圖5係顯示氮化物的蝕刻率之圖表。 圖6(a)、圖6(b)係顯示濺鍍率的特性之圖表。 圖6(a)、圖6(b)係顯示沈積率的特性之圖表。 【主要元件符號說明】 23 201130395 1 電漿處理裝置 2 載置台 3 筒狀保持部 4 筒狀支撐部 5 聚焦環 6 排氣通道 7 隔板 8 排氣管 9 排氣裝置 10晶圓的搬出入口 11閘閥 12a第1高頻電源 12b第2高頻電源 13a、13b匹配器 14a、14b供電棒 15晶圓(基板） 16靜電夾具 17内部電極 18熱媒體通道 20配管 21上部電極 22氣體喷出孔 23氣體導入管 24熱媒體供給管(氣體供給管) 24 201130395 25覆蓋環 51溝槽Fig. 2(a) and Fig. 2(b) are sectional views showing a conventional focus ring and a groove forming type collector. 3(a) to 3(c) are diagrams illustrating a groove shape. Fig. 4 is a graph showing the etching rate of the oxide film. Fig. 5 is a graph showing the etching rate of nitride. 6(a) and 6(b) are graphs showing the characteristics of the sputtering rate. Fig. 6(a) and Fig. 6(b) are graphs showing the characteristics of the deposition rate. [Description of main components] 23 201130395 1 Plasma processing apparatus 2 Mounting table 3 Cylindrical holding portion 4 Cylindrical supporting portion 5 Focus ring 6 Exhaust passage 7 Separator 8 Exhaust pipe 9 Exhaust device 10 11 gate valve 12a first high frequency power supply 12b second high frequency power supply 13a, 13b matching device 14a, 14b power supply rod 15 wafer (substrate) 16 electrostatic chuck 17 internal electrode 18 heat medium passage 20 piping 21 upper electrode 22 gas ejection hole 23 gas introduction pipe 24 heat medium supply pipe (gas supply pipe) 24 201130395 25 cover ring 51 groove
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