TW201123575A - Thin-film transistor - Google Patents

Abstract

Disclosed is a thin-film transistor wherein at least three terminals, namely a gate electrode, source electrode and drain electrode, an insulator layer, and a semiconductor layer are provided on a substrate, and the current between the source and drain is controlled by application of voltage to the gate electrode. The insulating layer is a layer which has been laminated by means of a coating method and which contains polycarbonate that has solubility with respect to at least one solvent selected from tetrahydrofuran, cyclohexanone and toluene of at least 5 wt%, and that comprises repeating units represented by formula (I).

Description

201123575 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a thin film transistor. More specifically, the present invention relates to an organic thin film electro-crystal having an insulator layer containing a specific material. [Prior Art] /Thin film transistor (TFT) is widely used as a switching element for display of liquid crystal display devices and the like. The CVD (Chemical Vap〇r Dep〇siti〇n, Chemical Vapor Deposition) device used in the production of TFTs by Shi Xi is very expensive. There is a display device using a TFT or the like. In addition, since the amorphous 矽7 is carried out at a temperature, there is a problem that the use of a lightweight resin substrate can be increased, and the manufacturing cost is greatly increased, or the film forming process of the eve is available at a very high temperature. The type of material used as the substrate is limited to the problem of the temple. In order to solve the above problems, it is proposed to use organic matter instead of amorphous yttrium and

The film formation method in which the process temperature required for the film is set to be low is known, and the temperature can be set, in particular, by using a large size of the coating member.

Non-patent documents 1 and ' are put into practical use. The electrical conduction system in TF is based on [. Therefore, the advantage of using organic matter J is small. The charge negative insulation film interface electric field induction 150866.doc 201123575 shell 'electrical conduction is greatly affected by the insulating film. Non-Patent Document 3 discloses that a polycarbonate layer using bisphenol a as a raw material is used as a gate insulator layer by spin coating an air-imitation solution, and organic molecules in adjacent organic semiconductor thin films are vertically aligned with respect to a substrate. Patent Document 1 discloses that an organic insulating film having flexibility, high mobility, and high switching ratio can be realized by selecting an appropriate insulating film such as polycarbonate for a supporting substrate, and in the embodiment, a poly is used. An epoxy-like imitation solution is formed by an spin coating process to form an insulating film. The previously known bisphenol A type polycarbonate has good solubility in a halogen-based solvent, but is not sufficiently soluble in a non-dentate solvent such as tetrahydrofuran (THF). Further, since the element made of the dentate-based solvent has a residual atom derived from the solvent, it adversely affects the performance of the transistor and induces deterioration of the characteristics of the produced element at the use stage. In addition, the dentate solvent has a large load on the environment and the human body. The polycarbonate having bisphenol A as a raw material disclosed in Patent Document 1 and Non-Patent Document 3 has a low solubility in a non-dentate solvent and cannot be applied to a coating process using a non-halogen solvent. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Laid-Open No. 2004-128469 Non-Patent Document Non-Patent Document 1: C. Dimitrakopoulos et al., Advanced Materials Vol. 14, p. 99, 2002 Non-Patent Document 2: A. Facchetti et al., Advanced Materials, Vol. 17 150866.doc 201123575, vol. 1705, 2005 Non-Patent Document 3: Q. Zhang et al. Vacuum (J. Vac. S〇c Jpn), (2006) 446 [Summary of the Invention] SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film transistor having an insulator layer which can be laminated by a coating method using a non-halogen solvent, which has a fast response rate (driving rate), a relatively large on/off ratio, and excellent transistor characteristics. Further, it is an object of the present invention to provide a thin film transistor which is reduced in deterioration over time and which can reduce environmental load. The present invention has been made to solve the above problems, and the present inventors have found that a polycarbonate resin layer having a specific structure can be formed by a coating process using a non-halogen solvent, and is used as a thin film insulator layer. Crystal should

The answer rate (drive rate) is high speed and has a high on/off ratio to complete the present invention. X The following thin film transistor is provided in accordance with the present invention. a 'thin film transistor' having at least a gate electrode, a source electrode and a drain electrode, three terminals, an insulator layer, and a semiconductor layer for controlling source-drain by applying a voltage to the gate electrode And the above-mentioned insulator layer is a layer laminated by a coating method, and contains a solubility of at least one solvent selected from the group consisting of tetrahydrofuran, cyclohexanone, and toluene to be 5% by weight or more' and includes the following formula (1) Polycarbonate of the repeating unit: [Chemical Formula 1] 150866.doc 201123575 ~^~〇-Ar-〇-c4- (l) O' (wherein Ar is a divalent aromatic group). 2. The thin film transistor according to 1, wherein the above formula (1) is a bonding group represented by the following formula (1): (2): [Chemical 2]

(wherein R1 and R2 are each a hydrogen atom or an alkyl group having a carbon number of 丨3); [Chemical 3]

(wherein R and R are each a hydrogen atom, an aliphatic hydrocarbon group of carbon number 6, an aryl group having a chiral number of 6 to 12 or a halogen atom; X is -Ο-, -S- '-so- ' _S〇2 ..._c〇_,9 9_亚苐基,f The bond group represented by the formula (2a), (2b), (2c) or (2d): [Chemical 4] R5 ί A C—(2a) R6 (wherein, R and R6 each independently represent a hydrogen atom, an aliphatic hydrocarbon group of carbon number 6 or an aryl group of carbon number 6 to 12' 115 and can be bonded to each other to form a cycloalkylene group having a carbon number of 4 to 12 ); [5] 150866.doc -6 - 201123575

And at least one of R (wherein R is a hydrogen atom or an alkyl group having a carbon number of 1 to 3 is a hospital base having a carbon number of 1 to 3);

[化6J

(any one of the bonds represented by the formula (2c)); [Chem. 7] The para (p-) group may be an ortho (0_), a meta (m_),

Alkyl group having a carbon number of 1 to 4)) wherein the Ar of the above formula (I) is a bonding group: a film transistor having a non-pair of 3. such as 1 or 2, which is represented by the following formula (3) of the structure [ 8]

(3) A hydrogen atom (wherein R13 and R14 are respectively 150866.doc, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, 201123575 an aryl group or a dentate atom having 6 to 12 carbon atoms; and R15 and R16 are mutually different substituents. Each is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms. 4. The thin film transistor according to 2, wherein Ar of the above formula (1) is a bond group represented by the above formula (2), wherein X is a bond group represented by the above formula (2a), and R5 and R6 are bonded to each other to form a carbon. a cycloalkylene group having a number of 4 to 12, 5. A thin film transistor according to 1 or 2, wherein Ar of the above formula (1) is a bonding group represented by the following formula (4):

(wherein X is the same as the above formula; and R17 and R18 are each an aliphatic hydrocarbon group having a carbon number of 丨6 or 6 or an aryl group having a carbon number of 6 to 12 or a dentate atom). The bonding group is shown as follows: 6. The thin film transistor of 1, wherein the core of the above formula (1) is represented by the following formula (5)

Carbon number 6 to u (wherein R 9 is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group or a halogen atom; and R 20 is an aryl group having a carbon number of 6 to 12, respectively, and a carbon number of 4 to 1 The thin film transistor, wherein the above formula r is an aliphatic hydrocarbon group having a carbon number of 4 to 12, wherein Ar of the above formula (I) has the following formula: 150866.doc 201123575 (6a), (6b) and (6c) The bond base ' and the movement of the bond base is in the foot (6a+6c)/(6a+6b+6c)=〇.〇5~〇.95 · '[11]

.R (6a) (6c) (6b) (wherein, X is the same as the above formula (2); and R is a hydrogen atom and an aliphatic group-based halogen atom of a carbon number). < Square base or 8. A thin film transistor, at least; ^, Wang Hao is provided on the substrate with a gate electrode, a pole electrode, and a r-end of the gate electrode +, and And the semiconductor layer, controlled by applying a voltage to the gate electrode, 1 叩? The source-drain current is applied; and the insulator layer is a layer of a coating layer by a coating method and contains a solubility of at least one solvent selected from the group consisting of tetrahydrofuran, cyclohexanone, and toluene. A polycarbonate which is a copolymer of a weight unit expressed by the following formula (II) and a repeating unit represented by the following formula (III): [Chemical Formula 12]. -Ar2-. ~ brother - 0 (II) -O-Ar^OC-0 (HI) (wherein, Ar2 and Ar3 are respectively a bonding group represented by the following formula (1) or (2) and Ar2 and Ar3 are mutually different bonds Base: [Chem. 13]

150866.doc (1) 201123575 (wherein R1 and R2 are each a hydrogen atom or an alkyl group of carbon number 3);

(wherein R3 and R4 are each a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group having a number of 6 to 12 or a halogen atom; and X is _〇_, -S_, -SO-, -S02- , _c〇_ , 9,9-indenylene, a bond group represented by the following formula (2a), (2b), (2c) or (2d): [Chem. 15] R5 — 〒 (2a) ( Wherein R 5 and R 6 are each a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms R 5 and R 6 may be bonded to each other; 6 a subring of 4 to 12 carbon atoms; base);

[化16] F? D

R R (wherein R is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms respectively] and at least one of R is an alkyl group having 1 to 3 carbon atoms);

•C-CH3 (2c) 150866.doc •10- 201123575

(Formula of formula (2c)); f The bonding group of 18J can be either the ortho position or the alignment

(2d) (In the formula, R7~RI2 is a single bond or a thiol group, and R7~R12 as a bond group is a base of carbon number 1~4)))' $ is the bond base R7~R 12 is a hydrogen atom or a film transistor of 1:8, wherein the above-mentioned polycarbonate is bitten to four winds. The solubility in the south is 7% by weight or more. 10. The organic + layer of any one of 1 to 9 is an organic semiconductor. According to the present invention, the above-mentioned semiconductor of "body# can provide - inserting m Μ, a kind of insulator layer which can be composed of yttrium (tetra) solvent: a laminate layer, a faster response rate (drive rate), and a larger on/off type, A thin film transistor having excellent crystal characteristics. Further, according to the present invention, a thin film transistor which is reduced in time and reduced in load can be provided. [Embodiment] The thin film transistor of the present invention is provided with a gate electrode at least on a substrate. And a three-terminal of the primary electrode and the electrodeless electrode, an insulator layer, and an organic semiconductor layer, and the source-drain current is controlled by applying a voltage to the gate electrode and the insulator layer is laminated by a coating method. a layer having a solubility of at least 5% by weight of a non-halogen solvent selected from the group consisting of four 150866.doc -11 - 201123575 hydrogen furan, cyclohexanone, and toluene, and comprising a lower city m ± 匕 3 Polycarbonate of the repeating unit represented by the formula (1): [Chem. 19], (I) Ο (wherein, Ar is a divalent aromatic group). The insulating layer of the inventive thin film transistor contains the formula (1). Weight The solubility of the polycarbonate contained in the insulating layer of the thin film transistor of the present invention (hereinafter referred to as "polycarbonate of the present invention") is a solubility in a non-dentate solvent (room temperature, often The pressure is 5% by weight or more, preferably 7% by weight or more, and 9% by weight or more. Further, the upper limit of the solubility is preferably as high as possible, and the upper limit of the degree of solution is 4% by weight. The solubility of the poly(dicarbonate) (tetra) (4) solvent of the present invention is 5 weights, so that when the insulating layer of the thin film transistor of the present invention is laminated, the polycarbon (4) of the present invention is dissolved in the (tetra) solute and coated by the insulating layer. (4) The solvent does not contain the environmental damage and the elemental performance of the element (4). Therefore, the thin film transistor of the present invention is less in the case of the element: the cow is less, and the deterioration can be reduced over time. Examples of the solvent solvent include aromatic solvents such as benzene, toluene, and dimethyl ketone, propyl ketone, ketone ethyl ketone, and cyclohexanone: alcohols such as di-alcohol and isopropanol. Ethyl sirolius, etc., four 虱 虱 (THF), two (four), two Alkylamine, ketone, 150866.doc 201123575 diethylformamide, etc. The polycarbonate of the present invention is preferably a bond of the formula (1) which is a bond of the following formula or (2) More preferably, the bonding group is a bonding group: Ar of the formula (I) is a bonding group represented by the formula (2), and fluorene is a bonding group represented by the formula (2a). And R are bonded to each other to form a cycloalkyl group having a carbon number of 4 to 2: [Chem. 20] <1» (wherein R and R2 are each a hydrogen atom or an alkyl group having a carbon number of 33); twenty one]

(In the formula, R3 and R4 are hydrogen hydrazine, respectively, and the alicyclic hydrocarbon group, carbon number 6 to 12, or halogen atom; -C0_,9,9- Yttrium, the following X is -0-, _S-, -SO-, _§ 键 (2a), (2b), (2c) or (2d) represented by the bonding group: [Chem. 22] R5 A C-(2a) R6 (wherein R5 and R6 are respectively hydrogen seats.., ^ nt η 勹 flying atoms, slaves 1 to 6 of fatty goose hydrocarbon groups or stones ^ 6 to 12 aryl groups, R5 plate Only 6_^4.π ^ , which are bonded to each other to form an alkylene group having a carbon number of 4 to 12); '[23] 150866.doc 201123575

(2b) In the middle, the file is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and at least one of R is a carbon number of 1 to 3, p I && Alkyl group having 1 to 3 carbon atoms; [Chemical 24] CH〇CH: I v C~ (2c) Any of the meta and para positions (the bonding group represented by the formula (2c) may be an ortholog) ; [化25]

(In the formula, the heart has two (four) bond groups as the bond is a single bond or an alkyl group, and the untwisted wire is from the w κ κ knife carbon number 4). R to r of the bonding group, and 2 are each a hydrogen atom or a polycarbonate of the present invention. Preferably, the bonding group represented by the following formula (3) of the formula (1), "冉, , · 口a ligand group, or a bond group represented by the following formula (5): a bond represented by ^(4) [Chem. 26] 150866.doc 14 201123575

An aryl group or a halogen atom of 6 to 12; R15 and R16 are mutually different substituents ', respectively, a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms;

(4) (wherein X is the same as the above formula (2); the aromatic group R and the R knife having a carbon number of 6 to 12 are an aliphatic nicotyl group or a halogen atom having a carbon number of 1 to 6);

(5) Carbon number 6 to 12 (wherein R is a hydrogen atom, an aryl group of a hydrocarbon group of carbon number 6 or a halogen atom; R2 is an aryl group having a carbon number of 6 to 12, and a carbon number of 4 to 12, respectively. An aliphatic hydrocarbon group). Further, in the polycarbonate of the present invention, it is preferred that the core of the formula (1) has a bonding group represented by the following formulas ((4), (6b) and (6e), and each of the bonding groups = foot (6a) +6c)/(6a+6b+6c)=0.05~0.95 : ' [29] 150866.doc 201123575

(4) (6b) (wherein 'X is the same as the above formula (2); and R is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms or a halogen atom). In the above formula (6a+6c)/(6a+6b+6c), 6a is the number of the bonding groups represented by the formula (6a), and 6b is the number of the bonding groups represented by the formula (6b), 6c. It is the number of bonding groups represented by the formula (6c). The above (6a+6C)/(6a+6b + 6c) is more preferably 0.^07, and further preferably 0.2~0.5 〇(6a+6C)/(6a+6b+6c) is less than 〇.05 In the case of the case, there is a possibility that the polycarbonate is insoluble in a non-halogen solvent. The polycarbonate of the present invention may be represented by a repeating unit 70 represented by the following formula (π) and a formula (Ιπ;), instead of the polycarbonate comprising the repeating unit represented by the above formula (1). Polycarbonate of copolymer of repeating unit: (Formula 30) (II) (III) (wherein, Ar and Ar3 are respectively a bonding group represented by the following formula (丨) or (2) and Ar2 and Ar3 are Different bond bases: [Chem. 31]

R2 (1) 150866.doc -16· 201123575 (wherein R and R2 are each a hydrogen atom or an alkyl group having a carbon number of 33);

(wherein R and R are independently a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms or a halogen atom; X is 0 S , -S〇-, -S02-, -CO - '9,9-arylene, a bonding group represented by the following formula (2a), (2b), (2c) or (2d), which comprises the repeating unit represented by the above formula (II) and the above formula ( The polycarbonate towel of the copolymer of the repeating unit represented by 1 (1), the ratio of the repeating unit 7L represented by the formula (π) to the repeating unit represented by the formula (III) is 0.95. The enthalpy of the element is (Π)/( (ΙΙ)+(ΙΙΙ)) When the amount of 5% or more than 〇95 is not reached, for example, when the polycarbonate has a skeleton having a higher crystallinity such as Azure A, the characteristic f·sheng is strong, (There is a decrease in solubility in a non-halogen solvent. A polycarbonate comprising a copolymer of a repeating unit represented by the above formula (II) and a repeating unit represented by the above formula (m), and a formula represented by the formula (1) The polycarbonate of the repeating unit is the same as the solubility of at least one non-i solvent selected from the group consisting of tetrahydroanthracene D, hexanone, and toluene, and is 5 wtm. Therefore, the formula: (11) Table The polycarbonate s| of the copolymer of the repeating unit and the repeating unit represented by the above formula_ is dissolved in a non-element solvent, and the solution layer is laminated by the core coating method to laminate the insulating layer of the thin film transistor of the present invention. The polycarbonate represented by the repeating unit and the polysiloxane containing the copolymer of the repeating unit represented by the formula („) J50866.doc 17 201123575 and the repeating unit represented by the formula (m) As the concentration of the solvent 〇5, the specific viscosity of the solution of (1) at 20 ° C [t! SP / C] is preferably 〇丨 5 5 / g, more preferably 0.3 to 3 dl / g 'especially It is preferably 0.5 to 2.5 dl/g. When the concentration viscosity [tjsp/C] is less than 0.1 g/dl, the strength of the coating film is insufficient, and there are problems such as peeling and cracking. When the viscosity (hSP/C) exceeds 5 dl/g, the coating viscosity is too high when the coating liquid is formed, and the productivity is lowered and the film thickness is uneven. The specific viscosity of the self-enthalpy is in the above range, for example, by selecting reaction conditions, adjusting the branching agent and the molecular weight regulator It can be realized by the amount of the method, etc., or by subjecting the obtained polycarbonate to physical treatment (mixing, differentiation, etc.) and/or chemical treatment (polymerization, crosslinking treatment, partial decomposition treatment, etc.). A polycarbonate having a specific specific viscosity. The alkyl group having 1 to 3 carbon atoms of R, R2 and R of the formula (2b) is preferably a mercapto group, an ethyl group, a n-propyl group or an isopropyl group. The alkyl group having 1 to 4 carbon atoms of R7 to R12 is preferably an anthracenyl group, an ethyl group, a n-propyl 'isopropyl group, an n-butyl group, a 2-butyl group, a tert-butyl group or an isobutyl group. The alkylene group as R7 to R12 is preferably 1,7-heptyl, fluorene, 8-exenyl, 1,10-decyl, 1,12-decyldecyl. The aliphatic hydrocarbon group having 1 to 6 carbon atoms of R3 to R6, R13 to R19 and R of the formulae (6a), (6b) and (6c) is preferably a methyl group, an ethyl group, a n-propyl group or an isopropyl group. Base, n-butyl, 2-butyl, tert-butyl, isobutyl, pentyl, hexyl. 150866.doc -18· 201123575 Make a horse ~R0, R13~r20 - R and formula (6a), (6b), ((4) the carbon number of the ring 6 12 aryl 'Car father good is stupid, naphthyl And a bicycloalkyl group having 4 to 12 carbon atoms of R and R, preferably a "cyclohexylene group: a cyclohexylene group, a cyclooctylene group, a 1, a cyclopentene group. The aliphatic hydrocarbon group having 4 to 12 carbon atoms is preferably a butyl fluorenyl group, a hexyl group, a heptyl group, an octyl group, a decyl group or a dodecyl group. The polycarbonate of the present invention may be composed only of the above repeating units. Further, as long as the solubility in the non-dentate solvent is 5 or more, π may have other repeating units than those in the range which does not hinder the object of the present invention. Further, the insulating layer of the thin film transistor of the present invention may be only by the present invention. The polycarbonate composition may also suitably contain other polycarbonate components, polyamidiene polyamide, polyester, polyacrylate, photoradical polymerization or photocationic polymerization photocurable resin. , copolymer containing acrylonitrile component, polyvinyl phenol, polyvinyl alcohol 'novolak resin And cyanoethyl polytriglucose, wax, polyethylene, polychloropyrene (p〇lychl〇r〇prene), polyethylene terephthalate, polyfurfural, polyethylene, polyvinylidene fluoride, poly Ethyl methacrylate, polysulfone, polycarbonate, polyamid cyanoethyl polydextrose, poly(vinylphenol) (pVp), poly(methyl methacrylate) (PMMA), polystyrene ( PS) 'Polyolefin, polyacrylamide, poly(acrylic acid), Panjun varnish resin, soluble acid resin, polyimine, polyxylene, epoxy resin and polytriglucose The polycarbonate of the present invention can be produced by reacting a dihydric phenol with a carbonate forming compound, for example, by using a dihydric phenol (IV) represented by the following formula (IV) and/or Yuan Ding (IV) has a different structure of dihydric phenol and carbonate form 150866.doc -19· 201123575 synthetic compound produced: [Chem. 33]

(wherein R3, R4 and X are the same as in the formula (7)). Specific examples of the dihydric phenol represented by the formula (IV) include di-phenylphenyl decane, 1,1-bis(4-hydroxyphenyl)ethane, hydrazine, and bis (4-hydroxyl). Phenyl)ethane, 2,2-bis(4-hydroxyphenyl)propane, 2,2-bis(3-methyl-4-hydroxyphenyl)butane, 2,2-bis (4-phenylene) ) butyl, 2,2_bis(4•phenyl)octane, bis(4-hydroxyphenyl)heptane, 3,3-bis(4-hydroxyphenyl)pentane, 4,4,- Dihydroxytetrazole = meryl methane, 1 bis (4-phenyl phenyl, phenyl ethene, m (4 phenyl phenyl 1-phenyl decane, bis (4- hydroxyphenyl) ether, double (4 -Hydroxyphenyl)thioether, bis(4-hydroxyphenyl)sulfone, 1, bis(4-hydroxyphenyl)cyclopentane, bismuth(1)-hydroxyphenyl)cyclohexane, 2,2-double (3-methyl-4 hydroxyphenyl)propane, 2-(3-methyl-4-hydroxyphenyl)-2-(4-hydroxyphenyl)- _phenylethane, bis (3-A) Hydroxyphenyl) sulfide, bis(3-methyl-4-hydroxyphenyl)sulfone, bis(3-methylhydroxyphenyl)decane, 1'1_bis(3-indolyl-4-jing) Phenyl) cyclohexane, 2,2_bis(2-methyl-4-yl-phenyl)propane, 2,2-bis(3,6-diamidino-4-hydroxyphenyl)propane, 2, 2-double (3_ ring 4-hydroxyphenyl)propane, hydrazine, hydrazine-bis(2-butyl-4-hydroxy-5methylphenyl)butane, U-bis(2-tert-butyl-4-hydroxy-3) _Methylphenyl)ethane, hydrazine, hydrazine bis(2-tert-butyl-'hydroxy-5-methylphenyl)propane, hydrazine, bis (2_t-butyl-4-hydroxy- 5-methylphenyl)butane, ^-bis--t-butyl-4-yl-hydroxy-methylphenyl)isobutane, 1}bis(2-tert-butyl-4-hydroxy- 5 _Methylphenyl) heptane, l'l-bis(2-tert-butyl-4-hydroxy-5-fluorenylphenyl)_丨_phenylmethyl 150866.doc •20· 201123575 alkane, 1, 1-bis(2-tityl-4-hydroxy-5-methylphenyl)butane, bis(3-chloro-4-hydroxyphenyl)decane, bis(3,5-dibromo-4) Hydroxyphenyl)methane, 2,2-bis(3-chloro-4-hydroxyphenyl)propane, 2,2-bis(3-fluoro-4-hydroxyphenyl)propane, 2,2-bis(3- Bromo-4-hydroxyphenyl)propane, 2,2-bis(3,5-difluoro-4-hydroxyphenyl)propane, 2,2-bis(3,5-dichloro-4-phenyl) Propylene, 2,2-bis(3,5-dibromo-4-phenyl)propane, 2,2-bis(3-bromo-4-hydroxy-5-chlorophenyl)propane, 2,2- Bis(3,5-diqi-4-hydroxyphenyl)butane, 2,2-bis(3,5- Bromo-4-hydroxyphenyl)butane, fluorenylphenyl-1,1_bis(3-fluoro-4-hydroxyphenyl)ethane, bis(3-fluoro-4-hydroxyphenyl)ether, 1 , 1_bis(3-cyclohexyl-4-hydroxyphenyl)cyclohexane, 4,4,-dihydroxybiphenyl, 4,4,-di-based-3,3'-dimercaptobiphenyl, 4,4'-dihydroxy-2,2,-dimercaptobiphenyl, 4,4,-di-based-3,3'-dicyclohexylbiphenyl, 3,3'-difluoro-4,4 ,-di-biphenyl, 2,2-bis(4-hydroxyphenyl)hexafluoropropane, 2,2-bis(3-phenyl-4-hydroxyphenyl)propane, 1,1-double ( 3-phenyl-4-hydroxyphenyl)cyclohexane, bis(4-phenyl)anthracene, bis(3-phenyl-4-hydroxyphenyl)sulfone, bis(4-hydroxyphenyl)ether, 9,9-bis(4-hydroxyphenyl)anthracene, 9,9-bis(3-methyl-4-hydroxyphenyl)anthracene, l,i_bis(4-hydroxyphenyl)_3,3,5_ Dimethylcyclohexene, 4,4'-[1,4-phenylphenylbis(1-indenylethylene)], 4,4|-[1,3-phenylene double (1) _Methylethylidene)]bisphenol, 1,1-bis(3-methyl-4-hydroxyphenyl)cyclopentane, and the like. Preferably, the binary expectation represented by the formula (IV) is one having an asymmetric structure represented by the following formula (V) or having a substitution at the ortho position of each benzene ring represented by the following formula (VI). The dihydric phenol represented by the following formula (VIII), which is represented by the following formula (VII), and the "binary phenol which is bonded to each other to form a cyclopentene group having a number of 4 to 12; Or the satisfaction of (6a+6c)/(6a+6b + 6c) represented by the formula (Ιχ) is 二元.〇5~0.95 of dihydric phenol: 150866.doc -21 · 201123575 [Chem. 34]

(V) (wherein R13, R14, R15 and R16 are the same as in formula (3)); [Chem. 35]

[化36]

(wherein R3 and R4 are the same as in the formula (7); R5 and R6 are bonded to each other to form a cycloalkylene group having a carbon number of 4 to 12);

19 OH (VIII) (wherein R19, r2〇 are the same as in formula (7)); [Chem. 38]

I50866.doc •22·201123575 based or halogen atom). Specific examples of the dihydric phenol represented by the formula (V) and the binary expectation represented by the formula (VI) include 1,1-bis(4-phenylphenyl)-1-phenyl phenylene, 2 ,2-bis(3-methyl-4-hydroxyphenyl)propane and 2,2-bis(3-phenyl-4-hydroxyphenyl)propane, u-bis(4-hydroxy-3-methylphenyl) Cyclohexane, 2,2-bis('hydroxy-3_cyclohexylphenyl)propane, 2,2-bis(3,5-dibromo-4-hydroxyphenyl)propane, 2,2-double (4-hydroxy-3,6-dimethylphenyl)propane, 丨'丨-biguanide hydroxyphenyl)ethane '2,2-bis(4-hydroxyl)butane, 1,1_ Bis(3_methyl_4_phenyl)cyclopentane, 9,9-bis(3-gasmethyl-4-hydroxyphenyl)indole. As the polycarbonate of the present invention, a halogenate or a carbonate compound such as a carbonium-halide chloroformate compound represented by phosgene can be used as a carbonate-forming compound in the presence of a suitable acid binder. It is carried out by a polycondensation reaction. The polycondensation reaction carried out in the presence of an acid binder by using a benzoic acid ester, a carbonate compound or the like as a carbonated vinegar is carried out in a solvent or in the absence of a solvent. As the ruthenium carbonate forming compound, phosgene can be cited. Examples of the dentate ester which is a compound of the 厌k S曰 formation include a gas phthalate. Examples of the carbonate compound include dimethyl carbonate and diphenyl carbonate. The ratio of the use of the stone-reactive Sg-forming compound may be appropriately adjusted in consideration of the chemistry of the reaction (in the field). Further, in the case where the carbonate-forming compound is in the form of a gas such as a krypton, a method of blowing the gas into the reaction system can be suitably employed. As the acid binder, for example, an alkali gold such as sodium hydroxide or potassium hydroxide can be used. 150866.doc • 23· 201123575 is a hydroxide, an alkali metal carbonate such as sodium carbonate or potassium carbonate, an organic base such as pyridine or a mixture thereof. Wait. The ratio of the use of the acid binder may be appropriately determined in consideration of the stoichiometric ratio of the reaction (when 篁), preferably the molar number of the dihydric phenol used (usually 1 mole equivalent to 2 equivalents) It is 2 equivalents or more than 2 equivalents. As a bathing agent, a known solvent which can be used for producing a polycarbonate or the like can be used alone or in a mixed solvent. Specific examples of the solvent include a sonic solvent such as toluene or xylene, and a gas-fired and gas-benzene-based gas. When the halogenated hydrocarbon solvent is used as a mixture, the interfacial polycondensation reaction can be carried out using two solvents which are not mixed with each other. It is particularly preferable to carry out an interfacial polycondensation reaction using an aqueous test solution and an organic solvent which is not mixed with water. In order to promote the polycondensation reaction, it is preferred to add a catalyst such as a tri(tetra) or tetrakis(4) salt of triethylamine. x, if necessary, a small amount of an antioxidant such as sodium sulfite or hydrosulfide may be added. The polycondensation reaction is usually carried out at a temperature of from 0 to 10 °', preferably from 5 to 4 Torr. The reaction pressure may be any one of a reduced pressure, a normal pressure, and a pressurization, and it is usually carried out at a normal pressure or a pressure of the reaction system itself to the left and right pressure. The reaction time is affected by the reaction temperature and the like, and is usually from about 1 minute to about 2 minutes, preferably from about 1 minute to about 2 hours. The polycondensation reaction can be carried out at the terminal terminator as needed. In the presence of phantom and 'sub-branching agents, as the terminal terminator, it can be used as a one-year-old', for example, the use of the phthalic acid and its derivatives can be preferably used, such as: p-tert-butylphenol, p-phenyl 150866 .doc • 24· 201123575 Phenol, p-cumylphenol 'p-perfluorononylphenol, p-perfluorooctylphenol, p-perfluorohexylphenol, p-(perfluorodecylphenyl)phenol, pair Fluoroxyphenyl)phenol, p-tertiary perfluorobutylphenol, (for acetonyl) all gas calcination, perfluorotris-dodecyloxy) 丨, hydrazine, hydrazine, 3 propyl ] Benzene test, 3,5-bis(perfluorohexyloxy)benzene, all-by-base benzoquinone milk, 12-base vinegar, p-(1H, 1H-all-gas octyloxy) phenol ^ 2H , 2H, 9H-perfluorodecanoic acid, 1,1,1,3,3,3_tetrafluoro-2-propanol or an alcohol represented by the following formula: H(CF2)„CH2OH (in the formula, η An integer of 1 to 12); F(CF2)mCH2OH (wherein m is an integer of 1 to 12). The ratio of the terminal terminator added is a copolymer composition ratio (the number of moles of the terminal terminator / (polycarbonate main) The number of moles of the chain monomer unit + the number of moirs at the end is better than _0_ 05~3 0% by mole, and further preferably 〇1~1〇% by mole. When the addition ratio exceeds 30% by mole, there is a flaw in causing a decrease in mechanical strength, which is less than 0.05 mol. In the case where the viscosity of the coating liquid is too high, there is a possibility that the film thickness is uneven or the formability is lowered. Examples of the branching agent include phlorizin (lucl) and adjacent Stupitriol, 4,6-dimercapto-2,4,6-tris(4-hydroxyphenyl)-2-heptene, 2,6-dimercapto-2,4,6-tris(4- Hydroxyphenyl)_3_heptene, 2,4-dimercapto-2,4,6-tris(4-hydroxyphenyl)heptane, ι,ι,ι-tris(4-hydroxyphenyl)ethane, Tris(4-hydroxyphenyl)phenylnonane, 2,2-bis[4,4-bis(4-hydroxyphenyl)cyclohexyl]propane, 2,4_bis[2_bis(4-hydroxyphenyl) 150866.doc 25· 201123575 Propyl]phenol, 2,6-bis(2-hydroxy-5-fluorenyl) 4-methylphenol, 2-(4-hydroxyphenyl)-2-(2,4- Dihydroxyphenyl)propane, tetrakis(4-hydroxyphenyl)methanetetrakis[4-(hydroxyphenylisopropyl)phenoxy]methane, 2,4-dihydroxybenzoic acid, trimellitic acid, trimerization Cyanic acid, 3,3_bis(3_fluorenyl-4-hydroxyphenyl)_2_oxo_ 2,3- The second atmosphere is called Bu Duo, 3'3_ bis (4_ aryl) oxidized called bud, % chloroisatin, 5,7-dichloropurine, 5-bromo ruthenium, etc. The addition ratio of the chemical agent is preferably equal to or less than the molar composition of the branching agent (the number of moles of the branching agent / the number of moles of the polycarbonate backbone monomer unit + the number of moles of the branching agent), preferably It is 5 mol% or less. When the addition ratio exceeds 3 〇 mol%, the viscosity of the coating liquid becomes too high, so that the film thickness is uneven or the formability is lowered. The production of the polycarbonate of the present invention can also be carried out by using a transesterification reaction using a diaryl carbonate as a carbonate forming compound. Examples of the diaryl carbonate of the carbonate-forming compound include diphenyl carbonate, di-p-tolyl carbonate, phenyl p-tolyl carbonate, di-p-chlorophenyl carbonate, and dinaphthyl carbonate. As the reaction form of the Sa exchange reaction, a melt polycondensation method, a solid phase polycondensation method, or the like is suitable. In the case of the melt polycondensation method, the reaction can be carried out in a molten state under reduced pressure and at a high temperature. The reaction is usually carried out at a temperature of from 15 Torr to 35 Torr, preferably from 200 to 300 °C. On the other hand, in the case of the solid phase polycondensation method, the solid phase state can be maintained, and heating (polycondensation) can be carried out by heating to a temperature lower than the glare of the produced polycarbonate. In any case of the melt polycondensation method and the solid phase polycondensation method, the reaction is determined to be 150866.doc •26·201123575 and then the reduction is set to preferably less than mmHg, which will be vinegar and heart. The resulting phenolic vapor from the above-mentioned diaryl s carbonate is removed to the outside of the system. The reaction time is affected by the reaction temperature, the degree of reduction, and the like, and is usually about 1 to 4 hours. The reaction is preferably carried out by introducing an inert gas such as nitrogen or argon. The reaction may be carried out by adding an antioxidant or the like as needed. The reaction product (crude product) is subjected to various post-treatments such as a well-known separation and purification method to recover a desired purity (purification degree) of polycarbonate. * The thin film transistor of the present invention can be constructed in several configurations depending on the position of the electrode, the order of lamination of the layers, etc. I has a field effect transistor (FET) structure. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a thin film transistor of the present invention. The thin film electric body 1 is laminated on the substrate 1A with a gate electrode 2〇, and the insulator layer is laminated on the substrate (7) so as to cover the gate electrode 2〇. On the insulator layer 3', the source electrode 40 and the drain electrode 5 are respectively arranged at a predetermined interval. The semiconductor layer 6G fills the space between the source electrode 4 () and the electrodeless electrode 5, and is laminated on the surface of the edge layer 3, the source electrode 4, and the electrode. The β-semiconductor layer 60 forms a channel region, and the current flowing between the primary electrode 40 and the wave electrode 5〇 is controlled by electric arcing applied to the gate electrode to perform an on/off operation. t 2 is a view showing another embodiment of the thin film transistor of the present invention. 1 'Electrical body 2, a layer of germanium on the insulator layer 30, a conductor layer 6A, and a source electrode 4 on the body of the V body layer 6G. A thin film transistor is formed in the same manner as the electrodeless electrode 5 (four). (There are the same as the thin film transistor. (There are the same 150866.doc -27-201123575. FIG. 3 is a view showing another embodiment of the thin film transistor of the present invention. In the thin film transistor 3, the source electrode 4 〇 is separated from the drain electrode 5 特定 by a specific one.

And the electrode 50. An insulator layer is laminated on the semiconductor layer 6A, and a gate electrode 2 is laminated on the insulator layer 30. Fig. 4 is a view showing another embodiment of the thin film transistor of the present invention. The thin film transistor 4 has a semiconductor layer 6 on the substrate 1A. On the semiconductor layer 60, the source electrode 4A and the electrodeless electrode % are stacked in a predetermined interval. The insulator layer 30 is filled with a gap between the source electrode 4 and the drain electrode 5, and is laminated on the source electrode 4, the drain electrode 5, and the semiconductor layer (10), and the gate electrode 20 is laminated on the insulator layer 30. In the case where an inorganic semiconductor is used as the material of the semiconductor layer, it is preferable to form a device having a top gate type as shown in Figs. 3 and 4 in order not to damage the polycarbonate layer as the insulator layer. The thin film transistor of the present invention has an organic semiconductor layer (organic compound sound) or an inorganic semiconductor 4' which is formed by a source electrode and a gate electrode which are formed at a predetermined interval and opposed to each other, and a source electrode and a germanium electrode. The pole electrodes form a pole electrode with a specific distance therebetween, and a current flowing between the source and the drain electrodes is controlled by applying a voltage to the interlayer electrode. The structure that controls the flow between the source electrode and the drain electrode and performs the amplification effect can be constructed. The thin film transistor of the present invention is not limited to the above-mentioned element as long as it is a current applied to the gate electrode by a voltage applied to the gate electrode. The above-mentioned element 150866.doc • 28-201123575 The thin film transistor of the present invention may have, for example, the following The composition of the organic thin film transistor: the top and bottom of the Yoshida et al. in the 49th Applied Physics Symposium, 27a-M-3 (March 2002) Contact type organic thin film transistor (refer to Fig. 5), and Kudo et al. of Chiba University, in the paper of the Electrical Society! Η, "% of the organic thin film transistor proposed in the page _ (refer to the call. The constituent elements of the thin film transistor of the present invention will be described. The insulating layer of the thin film transistor of the present invention is a layer which is laminated by a coating method and contains a layer of the polycarbonate of the present invention. The coefficient is low. Therefore, in order to reduce the driving voltage of the thin film transistor, it is preferable to be as thin as possible, but conversely, with the thinning of the thin film, the leakage current between the source and the gate becomes large, so it is necessary to select a suitable one. The thickness of the film, the bar, and the body layer is usually 10 nm to 5 μm, preferably the claws are ~2 μηι, and further preferably 1 〇〇 nm to 1 μηη. The insulator layer can be made by The polyglycol g of the present invention is prepared by dissolving a solution obtained from a non-dentate container, for example, by a dip coating method, a money method, a washing method, a rod method, a coating method, or the like, and coating a coating layer. For laking, = polymerization, self-assembly from solution, or a combination of these. The book, the 'layer of the edge layer may be only the layer containing the agglomerate of the present invention, or may contain other materials. Two or more layers of the insulator layer γ ^ The insulator layer is only a layer containing the polycarbonate of the present invention, and the thickness of the layer is also relatively short, so that the film thickness can be made sufficiently thin. |工肖b <organic film transistor, but by combining other insulator layers with higher dielectric constant, 1 easier to lower the threshold voltage. Stomach can be 150866.doc -29- 201123575 usually 'smaller polymerization The specific dielectric constant of the material is low, and the threshold voltage of the thin film electrical body becomes large. Japanese Patent Laid-Open Publication No. 2005-72569 and Japanese Patent Laid-Open Publication No. Hei No. 2005-013468 disclose high levels of low dielectric constant polymers which are obtained by combining an insulator layer having a higher At coefficient and a liquid phase. An organic thin film transistor having a mobility and a low threshold voltage. In the case of using a laminate of two or more insulator layers in the present invention, as long as the first insulator layer in direct contact with the semiconductor contains the polycarbonate of the present invention, The material and method of forming the second insulator layer that is in contact with the gate electrode are not particularly limited. The first insulator layer contains the polycarbonate of the present invention and is layered by coating. The film thickness is such that a continuous film can be formed. The thinner the better, for example, 0.5 nm to 1 〇〇 nm' is preferably 1 nm to 20 nm, and more preferably 1 nm to 1 〇 nm. The material for forming the second insulator layer can be a room temperature (for example, 2 〇 to 25 ° C) of a metal oxide (including an oxide of a shi shi), a metal nitride (a nitride containing ruthenium), a polymer, or an organic low molecule. The material having a resistivity of 1 〇 Qcm or more is particularly good as a material having a specific dielectric constant higher than 3. By forming the second insulator layer from the above material, it is easy to generate a storage layer in the semiconductor layer, and the threshold voltage of the transistor operation can be reduced. Examples of the metal oxide, the metal nitride, and the like which form the second insulator layer include cerium oxide, aluminum oxide, cerium oxide, titanium oxide, tin oxide, vanadium oxide, barium titanate, barium zirconate titanate, and barium titanium. Lead acid, titanic acid such as steel, titanic acid recognition, titanate collar, fluorinated pot town, bismuth oxide, oxyfluoride oxide, secret oxide, titanic acid, strontium oxide, titanate recording, group 150866.doc •30- 201123575 2 character emulsification, group of acid red, trioxide woven combination of these into ° °, the car is good is yttrium oxide, alumina, oxidation group, titanium oxide. Further, it is also preferable to use nitride sand (8) (8), SixNy, and ruthenium (yt, y &gt; 0) nitride inorganic nitride. By forming an insulator layer by nitriding, such as m si , SiONJx, y &gt; G), it becomes easier to generate a storage layer to reduce the threshold voltage of the transistor operation. The second insulator layer may also be formed of a δ-metallized salt precursor material. As the metal alkoxide, the mi it and the genus 4 can be selected, for example, from a transition metal, a lanthanoid element or a main group element, and specific examples thereof include ruthenium (tetra), ruthenium, titanium (Ti), and silk ( Bi), group (Ta), 鍅 (Zr) 'iron (Fe), recorded (Ni), 猛 (Μη), wrong (Pb), 镧 (La), ( (Li), nano (Na), _ ( κ), (Rb),! Color (Cs), fr (Fr), wrinkle (Be), magnesium, about the heart), (Nb) 钇 (τΐ), mercury (Hg), copper (cu), cobalt (c〇), 铑 (Rh) , 铳 (Sc) and 钇 (Y). Examples of the alkoxide of the metal alkoxide include an alkoxide derived from the following compounds: an alcohol containing methanol, ethanol, propanol, isopropanol, butanol or isobutanol, and methoxyethanol. Ethoxyethanol, propoxyethanol, butoxyethanol, pentyloxyethanol, heptoxyethanol, methoxypropanol, ethoxypropanol, propoxypropanol, butoxypropanol, pentane Alkoxy alcohols of oxypropanol and heptoxypropanol. The second insulator layer may also be formed of an organic compound. As the organic compound, for example, a polyimide, a polyacetamide, a polyester, a polyacrylate, a photoradical polymerization or a photocationic polymerization photocurable resin, a copolymer containing an acrylonitrile component, or the like may be used. Polyethylene refining base 150866.doc 201123575 Phenol, polyvinyl alcohol, novolak resin and cyanoethyl polytriglucose. In addition to the above organic compounds, wax, polyethylene, polygas flat, poly-p-ethyl formic acid, polypyrene, polyethylene, polyvinylidene, polydecyl acrylate, polysulfone, Polyimide cyanoethyl polytriglucose, poly(vinyl benzoquinone) (PVP), poly(decyl methacrylate) (PMMA) 'polycarbonate (PC), polystyrene (ps), polyolefin A polymer material having a high dielectric constant such as polyacrylamide, poly(acrylic acid), novolak resin, resol resin, polyimine, m, epoxy resin or polytriglucose. The second insulator layer may be a mixed layer using a plurality of the above-mentioned inorganic compound materials or organic compound materials, or may be a laminate body composed of a material material alone. The second insulator layer may also be a product of a layer having a higher dielectric constant and a mixture of a material having water repellency (IV). . The layer &amp; is composed of (4) material alone or further contains the anode oxygen. The second insulator layer and the anode layer may be anodized ruthenium, and the film may be a constituent. In this case, the morphology of the epitaxial oxide film layer. Like HQ Shengkou J hunting-... It belongs to Yangshuo Erxin 丄 r/, 丨β knows that it can be anodized and oxidized to form 'good' as a anodic treatment that can be anodized. Yangshuo S π old "rabbit" can be cited or buckled. The method of % polar oxidation treatment does not give way. By performing anodizing, the electrolyte used in the oxidation treatment can be used. ^ Oxidation film. There is no particular limitation on the electrolyte of the membrane. The second is the formation of porous oxygen. The use of sulfuric acid, phosphoric acid, J50866.doc •32· 201123575 acid, chromic acid, boric acid, aminosulfonic acid, benzenesulfonic acid, etc. The mixed acid or the salt obtained by combining the two or more kinds of these. The treatment conditions for the anodization vary depending on the electrolyte used, and the specific conditions are: the concentration of the electrolyte is 1 to 80 mass. /. The temperature of the electrolyte is 5 70 C, the current density is 〜 5 to 6 〇 A/cm 2 , the voltage is dip (9) volt, and the electrolysis time is in the range of 1 〜 to 5 minutes. The preferred anodizing treatment uses an aqueous solution of sulfuric acid, phosphoric acid or boric acid as an electrolytic solution, and is treated by a direct current, and an alternating current can also be used. The concentration of the acid of the electrolyte is preferably 5 to 45% by mass, preferably 20 to 250 seconds after the temperature of the electrolyte is 2〇~5〇C, and the current density is 5~20A/cni2. . When the layer thickness of the second insulator layer is thin, the effective voltage applied to the organic semiconductor becomes large, so that the driving voltage and the boundary voltage of the device itself can be reduced, but the leakage current between the source and the gate becomes larger. Therefore, it is necessary to choose an appropriate film thickness. The thickness of the second insulator layer is usually _step 5 μηι ‘the goodness of the vehicle is 50 nm to 2 μπι, and further preferably (10)_~1 _. The method for forming the second insulator layer is not particularly limited, and it can be formed by a vapor phase or a liquid phase film formation. For example, a vacuum vapor deposition method, a molecular beam crystal method, or an ion beam method can be used depending on the material. Low-energy ion beam method, ion-electric method 'CVD method, splashing method, Japanese patent special-opening 丨 丨 61 彻 彻 彻 彻 2 2 2 2 2 2 2 专利 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖 咖The method of forming an atmospheric plasma method disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2-147209, et al., pp. 2, 85, 362; Μ coating method, spin coating method, knife coating method, dip coating method, washing and casting 150866.doc -33- 201123575

..., treated with a chemical solution to form an insulator layer. As a material of the structure of the thin film transistor, an inorganic compound such as a metal oxide or a nitride or a plastic film (PET (p〇lyethyiene terephthalate), PES (PET) can be used as the material. P〇1yethersulfone, polyetherite (polycarbonate), a metal substrate, or a composite of these can be sufficiently supported or laminated by a constituent element other than the substrate. Further, in the case of the structure of the thin film transistor, the substrate may not be used. Further, as a material of the substrate, a bismuth (Si) wafer is often used. In this case, Si itself can be used as a gate electrode and a substrate. Further, the surface of the &amp; may be oxidized to form Si 〇 2 and used as an insulating layer. In this case, as shown in FIG. 7 , Au or the like may be formed on the substrate 12 also on the substrate and the gate electrode. The metal layer serves as the electrode 70 for wire connection. Further, in Fig. 7, 12 denotes a Nanxun doped Si substrate (gate electrode), 3 2 denotes an S i 〇 2 layer (insulation layer), 42 denotes an Au electrode (source electrode), and 52 denotes Au The electrode (the electrodeless electrode), 6 〇 indicates that the semiconductor layer '70 indicates an electrode for wire connection, 72 indicates an Au metal layer, and 74 indicates a Cr metal layer. 150866.doc • 34· 201123575 In the thin film transistor of Fig. 7, the polycarbon (4) of the present invention is used for the first insulator layer disposed between the S1 layer (insulating layer) and the semiconductor layer. The semiconductor used in the semiconductor layer is organic or inorganic, and is not particularly limited. For example, when an organic semiconductor layer is formed using an organic semiconductor, it can be used as described in the chemica I Review, Vol. 1, pp. i. Organic semiconductor materials, etc. The organic semiconductor layer may also be a combination of a plurality of materials selected from the above organic semiconductor materials to form a layer formed of a mixture of a plurality of materials or a layer formed of a layer separately formed of the materials. Specific examples of the material of the organic half (four) layer include: pentacene, benzene, onion, heptabenzene, hexabenzene, C6 oxime, C7 fluorene, phenanthrene, yoshi, yag, yttrium, red Low molecular materials such as fluorene, phthalocyanines, and porphyrins and derivatives thereof; diphenylethylene benzene, oligoethylene fast, low (tetra) phenoline, oligolithite: low: species and derivatives thereof; Polyacetylene, polyporphin, poly(3-hexyl mouth) i (9,9--octyl 苐_共_联 ” 塞 ” ({) 〇 1 outside 9,9|士〇出_嶋_ 〇bUlnophene)), % phenylacetylene, poly. pheno- acetylene and other redundant polymers and derivatives thereof, but are not limited thereto. Examples of using an inorganic semiconductor as a semiconductor layer include: a non-single crystal semiconductor film or a crystalline germanium represented by a cerium, a microcrystal, or the like, and a compound semiconductor or an oxide semiconductor such as Zn〇, a_InGaZn〇 or 8 core, but is not limited thereto. The film thickness of the i-semiconductor layer is not particularly limited, and is usually 0.5 nm to 1 μm, preferably 2 nm to 250 nm. The method for forming the semiconductor layer is not particularly limited and can be applied to the public. The method of 150866.doc -35· 201123575 is well known. For example, in the case of the components of the organic thin film transistors i and 2 as shown in FIGS. 1 and 2, it is preferred that after forming the polycarbonate insulator layer, The organic semiconductor layer is formed into a film when exposed to the atmosphere. The film formation is ideal for molecular beam epitaxy (MBE (m〇lecular beam ephax phantom method), vacuum evaporation method, chemical puzzle method, molecular beam evaporation) a gas phase filming such as a splashing clock. In addition to the film forming method, a solution obtained by dissolving a material in a solvent is formed by a dip coating method, a slave coating method, a casting method, a bar coating method, a roll coating method, or the like. It is also preferable that the coating layer 'II is formed by baking, electropolymerization, self-assembly from a solution, and a combination of the above-mentioned layers. It is also possible to form an organic semiconductor layer by combining two or more of the above film formation methods. 0, in the case of the components of the organic thin film transistors 3 and 4 as shown in FIGS. 3 and 4, it is preferable to form a polycarbon without being exposed to the atmosphere after the organic semiconductor layer is formed into a film. The layer of the layer (insulator layer). In this case When the layer of the organic semiconductor layer is not particularly limited, the film forming method described above is preferably a film formed by vapor phase. The method for forming the semiconductor eyebrow r $ 士, + 凊 of the present invention is not known. It is preferable to carry out the step of forming the semiconductor and the insulating film layer in the case of not exposing to the atmosphere as described above, and in the case of selecting the organic semiconductor material as the semiconductor layer, by exposing the atmosphere to the atmosphere The semiconductor material which can improve the performance is preferably a step after the step of forming the insulator-insulator layer, so that the field effect can be improved by improving the crystallinity of the semiconductor layer: the mobility is 150866.doc • 36· 201123575 in organic When a vapor phase film is formed in the film formation of the semiconductor layer (steaming, (4), etc.), it is preferable to maintain the substrate temperature at the time of film formation at a high temperature. The temperature is preferably from 50 to 250 ° C, and more preferably from 7 to 15 (rc. Further, if annealing is performed after film formation by a film formation method, a high-performance device can be obtained, which is preferable. The temperature is preferably from 50 to 200 t, and further preferably from 70 to c. The time is preferably from 10 minutes to 12 hours, and more preferably from 1 to 10 hours. Gate electrode, source electrode and drain electrode The material of the electrode is not particularly limited as long as it is a conductive material, and can be used: New Zealand, Gold, Silver, Record, Complex, Copper, Iron Tin, 锑' Button, Indium, Palladium, Rhodium, ruthenium, osmium, aluminum, iridium. , 锗, =, tungsten, tin oxide, indium tin oxide (ITO), exchange of oxidation, remarks, stone, stone, ink, glass graphite, silver and carbon, bell, strontium, sodium, magnesium, potassium Calcium, sharp, titanium, manganese, lanthanum, gallium, lanthanum, sodium-potassium alloy, aluminum, magnesium/copper mixture, magnesium/silver mixture, magnesium/aluminum mixture, magnesium/indium mixture, aluminum/aluminum oxide mixture, lithium /Aluminum mixture, etc. Regarding the film thickness of the gate electrode, the source electrode and the drain electrode, there is no particular limitation as long as current is conducted. Preferably, it is 02 nm to 10 _ And then the range of 4 to 300 nm. If the film thickness of the electrode is within the above range, the film thickness can be made higher by the thin film thickness, and the voltage is not too thick. Therefore, it takes no time to form the film, and in the case of another layer such as a build-up layer or an organic semiconductor layer, a step can be formed without slippage; a laminated film is formed slipwise. p The source side electrode and the electrode electrode are separated by a specific one. The spacer layer is determined according to the use of the thin film transistor, and is usually 150606.doc • 37- 201123575 μηι 〜1 preferably 1 μπι to 100 μιη, and further preferably 5 μιη to 100 μηι As the electrode electrode and the drain electrode, a fluid electrode material such as a solution, a paste, an ink or a dispersion containing the above-mentioned conductive material can be used, and it is preferable to use a conductive polymer or contain platinum, gold, silver or The solvent or the dispersion medium of the metal ion particles is a solvent or a dispersion medium for the fluid electrode material, and it is preferable to contain water of 6 〇 mass% or more in order to suppress damage to the organic semiconductor. A solvent or a dispersion medium of water of 90% by mass or more is preferable. As the dispersion containing metal fine particles, for example, a well-known conductive polymer or the like can be used, and it is usually preferred to have a particle diameter of 〇5 nm to 5 〇. Nm, preferably a dispersion of metal fine particles of i nm ~ Η) (10). For the metal microparticles, for example, lead, gold, silver, tin, chrome, steel, iron, tin, ruthenium, etc. lead, bismuth, indium, palladium, ruthenium, osmium, iridium, osmium, iridium, ruthenium, indium, crane, and rhetoric can be used. Further, the vehicle preferably uses a dispersion stabilizer mainly containing an organic material, and the metal fine particles are dispersed in a dispersion medium such as water or an arbitrary organic solvent to form a dispersion, and the dispersion is used to form an electrode. Examples of the method for producing the dispersion of the metal fine particles include a phase evaporation method, a clock reduction method, a PCT method, and a physical formation method such as a rolling phase σ formation method, and a gel method, and a common sedimentation method is equal to a reduction metal in a liquid phase. Ion-forming metal particles: the method of learning, preferably by Japanese (4) Kaiping __ 2 3Y9S Japanese Patent Special Kaiping 1 Bu 嶋 47 Gazette, Japanese Patent Special Open 8 Gazette, 曰本专利专开 2 _ gamma 53 bulletin, etc. I50866.doc •38· 201123575 The colloidal method of 曰 专利 专利 专利 专利 专利 〇〇 〇〇 ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 2001 A dispersion of metal fine particles produced by a vapor phase evaporation method disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. Specifically, the formation of the electrode using the metal fine particle dispersion is carried out after drying the solvent of the metal fine particle dispersion, if necessary, in (10). c~3Q (rc, preferably 150t~200. The temperature is heated according to the shape, so that the metal microparticles are thermally fused", thereby forming an electrode pattern having a target shape, particularly forming a source electrode and a drain electrode. The material of the electrode is preferably a material having a small electrical resistance with the contact surface of the semiconducting layer. The resistor corresponds to the field effect mobility in the production of the current control element, and in order to obtain a large mobility, the resistance must be as large as possible. It is usually determined by the relationship between the work function of the electrode material and the energy level of the organic semiconductor layer. If the work function (w) of the electrode material is set to a, the free potential of the organic semiconductor layer (Ipm is b ' When the electron affinity (Af) of the organic semiconductor layer is c, it is preferable to satisfy the following relationship. Here, a is a positive value based on the vacuum level. In the case of a p-type organic thin film transistor Preferably, the beu formula (A))' is further preferably b_a&lt;1 Q eVL material and the relationship of the organic semiconductor layer can maintain the above relationship to obtain a high performance device, especially good choice of work function as much as possible Large electrode material Preferably, the work function is 4.0 ev or more, and preferably the work function is 42 eV or more. 150866.doc •39· 201123575 The value of the work function of the metal is as long as, for example, the basics of the chemical handbook, pages 11-493 (revised) The third edition of the Sakamoto Chemical Society may be selected from the above listed list of effective metals having a force function of 4. 〇eV or more as described in the article 1983. The high work function metals are mainly Ag (4_26, 4·52, 4·64, 4_74 eV)'

Al (4.06, 4.24, 4.41 eV), Au (5.1, 5.37, 5.47 eV), Be (4.98 eV), Bi (4.34 eV), Cd (4.08 eV), Co (5.0 eV),

Cu (4.65 eV), Fe (4.5, 4.67, 4.81 eV), Ga (4.3 eV),

Hg (4.4 eV), Ir (5, 42, 5.76 eV), Mn (4.1 eV), Mo (4.53, 4.55, 4.95 eV), Nb (4.02, 4.36, 4.87 eV), Ni (5.04, 5·) 22, 5.35 eV), Os (5.93 eV), Pb (4.25 eV), Pt (5.64 eV), Pd (5_55 eV), Re (4.72 eV), Ru (4.71 eV), Sb (4.55, 4.7 eV), Sn (4.42 eV), Ta (4.0, 4.15, 4.8 eV), Ti (4.33 eV), V (4_3 eV), W (4.47, 4.63, 5.25 eV), Zr (4.05 eV). Among these, preferred are noble metals (Ag, Au, Cu, Pt), Ni, Co, Os, Fe, Ga, Ir, Mn, Mo, Pd, Re, ru, v, w 0 metals. Preferred is ITO, polyaniline or pED〇T: PSS (poly(ethylenedioxythiophene): p〇iy(styrene sulf〇nic acid) 'poly(dioxyethylthiophene)-poly(styrenesulfonic acid)) The polymer and the carbon are not particularly limited as long as the work function satisfies the above formula (A), and may contain one or a plurality of such high work function double substances. In the case of an n-type organic thin film transistor, 吟' is preferably a-c &lt; l.5 eV (formula (B))' and further preferably a-c&lt;i.〇 eV. The right electrode material and the organic half 150866.doc • 40- 201123575 conductor layer relationship can maintain the above relationship to obtain high performance devices, especially good to choose the electrode material with the work function as small as possible, preferably the work function is 4.3 eV or less, and further preferably the work function is 3.7 eV or less. As a specific example of the low work function metal, a work function having a work function of 4.3 eV or less is described in, for example, the basics of the chemical handbook, page II-493 (revised the third edition of the Japanese Chemical Society, Maruzen Co., Ltd., issued 1983). The above list of effective metals can be selected. Examples of the low work function metal include Ag (4.26 eV), Al (4.06, 4.28 eV), Ba (2.52 eV), Ca (2.9 eV), Ce (2.9 eV), Cs (1.95 eV), and Er (2.97). eV), Ειι (2·5 eV), Gd (3.1 eV), Hf (3.9 eV) ' In (4.〇9 eV), Κ (2·28), La (3.5 eV), Li (2.93 eV) , Mg (3.66 eV), Na (2.36 eV), Nd (3.2 eV), Rb (4.25 eV), Sc (3.5 eV), Sm (2.7 eV), Ta (4.0, 4.15 eV), Y (3.1 eV) , Yb (2.6 eV), Zn (3.63 eV), etc. Among these, Ba, Ca, Cs,

Er, Eu, Gd, Hf, K, La, Li, Mg, Na, Nd, Rb, Y,

Yb, Zn. As the electrode material, as long as the work function satisfies the above formula (B), one or a plurality of such low work functions may be contained, and it is not particularly limited. However, when the low work function metal is exposed to moisture or oxygen in the atmosphere, it is easily deteriorated. Therefore, it is preferable to coat the metal which is stable in the air such as Ag or Au as needed. The film thickness required for the coating is 10 nm or more. The thicker the film thickness, the more it is protected from oxygen or water. However, in actual use, it is preferably 1 μm or less for the purpose of improving productivity. As a method of forming a source electrode and a drain electrode, for example, by evaporating 150866.doc •41 - 201123575, 'electron beam evaporation, sputtering, large phase vapor deposition, electrodeposition, electroless plating, di-ion, ion Electroplating, chemical gasification. Further, as a pattern to be carried out as needed, a well-known photolithography method or a peeling method is used for coating, printing, or inkjet, etc.:: upper=lower method: a conductive thin film is formed into a metal such as copper formed by an electrode method. Forming a U-liquid equal to or in addition, a liquid or dispersion of a source electrode and a drain electrode, and a metal micro-two-component polymer ink method to form an electrode, also: a coating film An electrode is formed. Further, it is also possible to use a drop-off button conductive polymer or a metal micro-bar. The electrode is formed by a relief, a gravure, a wH1, a conductive material, or the like. "The printing method is patterned to remove the electrode material, and the electrode material as the gate electrode, the source electrode, and the electrodeless electrode" uses a well-known conductive polymer whose conductivity is improved by substitution or the like. Preferably, for example, conductive polyaniline, conductive polyphthyl ratio, conductive polybenzate (poly(dioxyethyl phenyl) and polystyrene) are used. (etc.), poly(dioxyethyl sin KPEDOT) and polystyrene acid (4). With these materials, the contact resistance between the source electrode and the drain electrode and the semiconductor layer can be reduced. In the ruthenium film transistor, in order to improve the implantation efficiency, for example, a buffer layer may be provided between the organic semiconductor layer and the source electrode and the drain electrode. The buffer layer provided in the η-type organic thin film transistor is preferably an organic caller. LiF, Li2〇, CsF, NaCCb, 150866.doc •42- 201123575 KCl, MgF2, CaC〇3, etc. used in the cathode of the optical element have compounds for metal and soil metal ion bonding. p-type organic thin film transistor The buffer layer set in the middle is ideal FeCl3, TCNQ (7,7,8,8-tetracyanoquinodimethane, 7,7,8,8-tetracyano-p-dioxane), cyano compound such as F4-TCNQ, HAT; CFX or Ge02, Si〇2 Mo03, V2〇5, V〇2, V2〇3, MnO,

Mn304, Zr02, W03, Ti02, ln203, ZnO, Ni〇, Hf02 '

Metals such as Ta2〇5, Re〇3, and Pb〇2; metal oxides other than soils, such as inorganic compounds such as ZnS and ZnSe. These oxides cause oxygen vacancies in many cases. The oxygen vacancies are suitable for injection into the cavity. Further, it may be TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,l'-biphenyl- 4,4i-diamine 'N,N'-diphenyl-fluorene, Ν·-bis(3_methylphenyl)", !,-diphenyl-4,4,-diamine) 4NPD(N,N,_diphenyl-N,N,_bis(i naphthyi)_ l,l| -blphenyl-4,4''-diamine,N,N'-diphenyl-N,N,_bis(1_naphthyl)-1 1,1-benben-4,4'-diamine) A compound used as a hole injection layer or a hole transport layer in an organic el element such as a compound or Cupc. X, more preferably a buffer layer comprising two or more of the above compounds. In the thin film transistor of the present invention, for example, in consideration of the influence of oxygen: water or the like on the semiconductor layer, a gas barrier layer can be formed on a part of the entire outer peripheral surface of the element. The front side or the material for forming the gas barrier layer may be used, for example, polyethylene, π, and the like, such as vinylidene chloride, gas-thin copolymer, polyvinyl chloride, and polymer layer. The material is exemplified by: 乙 寻. a can also be used as an insulating /, /, insulating inorganic and organic matter. 150866.doc -43- 201123575 [Examples] Synthesis Example 1 A solution obtained by dissolving 0.2 kg of 1,1-bis(4-hydroxyphenyl)ethane in 12% by weight of a 12% by weight aqueous sodium hydroxide solution , and 1 〇 2 dioxane buckle &amp; 攒 攒 拌 拌 拌 拌 攒 攒 攒 攒 攒 攒 攒 攒 拌 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Then, the reaction solution was allowed to stand still in the organic layer to obtain a two-gas methane solution having a degree of polymerization of 2 to 6 and having a gas phthalate group-containing oligomer (PC0_E) at the molecular end. A mechanical stirrer, a stirring blade, and a separator were attached to the reaction solution, and dioxane (14Q red) was added to the above oligomer (3 1 G mL). To the third butyl benzene was added as a terminal agent and the monomer solution was added in a sufficient amount to the mixture, and the mixture was continuously stirred for 1 hour. Furthermore, the early solution was prepared as follows: Prepare 2 N = 虱 emulsified sodium aqueous solution of 185, and after cooling to room temperature or less, add 〇ig sulfite-16.7 g of 1 mountain double (4 phenyl) Ethylene (9) Bu to completely dissolve the elbow obtained reaction mixture 'μ 2 L di-methane and 丨L water diluted, : Wash ° separation of the lower layer, and then 1 L water once, i RO.Ol Ν salt 1 L water 3_ The human is washed in the order. The obtained trichloromethane boiling port is poured into warm water (10) containing isoamyl alcohol, and the resulting precipitate is filtered and dried to obtain a compound (1): [Chem. 39] 150866 .doc -44- 201123575

On Ο-Η- Compound (1) / η The structure of the compound (1) was confirmed by iH_NMR (pr〇t〇n nUclear magnetic resonance). Further, the ratio of the dioxane solution of the compound (1) having a concentration of 0.5 g/d 〇 at 2 ° C; the viscosity at 1 hr [r|sp/C] was dl/g. Example 1 A glass of 25×20×1.1 mm was used as a substrate, and a ITO film was formed on the substrate at a thickness of 100 nm, and patterned by photolithography to obtain a transparent gate electrode (hereinafter, IT 〇) The substrate of the film is called a transparent support substrate. ^The β-transparent support substrate is ultrasonically cleaned with isopropyl alcohol for 5 minutes, then washed with pure water for 5 minutes, and further ultrasonically cleaned with isopropyl alcohol for 5 minutes. Dry the A gas for drying. Finally, it was washed with a UV (ultravi〇iet, ultraviolet)-ozone cleaning device [manufactured by Samco International] for 30 minutes. 0.25 g of the prepared compound (1) was added to 5 giTHF and washed in a commercially available ultrasonic cleaner for 30 minutes, thereby preparing a 5 wt% polycarbonate solution. The solution of the polycarbonate was filtered through a Ptfe (polytetrafluoroethylene) membrane filter of 2 μm, and then dropped onto the transparent support substrate and spin-coated at 15 rpm for 3 sec. This forms a gate insulator layer having a film thickness of 7 1 〇 nm. After the formation of the insulator layer, it was fixed to a substrate holder of a commercially available vacuum vapor deposition apparatus [ULVAC], and an organic semiconductor layer and a metal electrode were formed in a series of vacuum environments according to the following procedure. 150866.doc •45· 201123575 The transparent support substrate with a polycarbon (four) layer formed on the film is fixed in vacuum evaporation and vacuum evacuated to (4). The electric pump was heated and heated to 400t, and the film thickness of 50 _ thick pentacene film was set on the outer surface of the laminated structure at a steaming rate of 0.05 coffee/3. Semiconductor layer). Finally, a gold film is formed by a metal cover with a film thickness of 5 G (10), whereby source electrodes and drain electrodes which are not in contact with each other are formed so that the interval (channel length L) becomes 75 (four). In this case, a film transistor having the structure of Fig. 2 was formed by forming a film having a width (channel width w) of 5 mm as the source electrode and the drain electrode. The film thickness and the slit rate of the organic semiconductor layer and the metal electrode are controlled by the thickness of the crystal oscillation type film thickness meter [ulvac (manufactured by the company)]. Further, the film thickness of each of the obtained layers was measured by a stylus type film thickness meter to confirm that it coincided with the reading of the crystal oscillation type film thickness meter. A gate voltage of 〇~_1 〇〇v is applied to the gate electrode of the obtained thin film transistor, and a voltage of 5 〜1 〇〇V is applied between the source and the drain to circulate current, and the on/off ratio and the threshold voltage are evaluated. And field effect mobility μ. As a result, the on/off ratio of the current between the source-drain electrodes in the current saturation region is 9·3 χΐ〇 5, and the critical electric β is 23 V. The field effect mobility μ is 1_1 cm 2 /Vs. The application of each voltage and the measurement of the current between the source and the drain were performed using a semiconductor characteristic evaluation system (42 〇〇 scs manufactured by Keithley Instruments). Further, in the obtained thin film transistor, 'electrons are induced in the channel region (source-drain) of the organic semiconductor layer' to function as a p-type transistor. Further, the field effect mobility μ is calculated using the following formula (A): 150866.doc -46- 201123575

Id = (W/2L) - Ομ - (Vg-Vt)2 (A) (where Id is the source, pole-drain current, W is the channel width, l is the channel length, and C is the gate insulator layer The capacitance per unit area, &amp; is the threshold voltage, Vg is the gate voltage). Further, the solubility of the compound (丨) used in the insulator layer of the thin film transistor was evaluated. Specifically, W g compound (1) and 19 g of THF were added to a stoppered sample vial, and shaken at room temperature under a normal pressure condition for 24 hours until dissolved, and then visually evaluated. The results are shown in the table. The results are shown in the table. (In addition, when there is no insoluble matter, the solubility of THF is evaluated as "〇". In addition, the insoluble matter can be clearly confirmed and confirmed. In the case of a fine dust-like insoluble matter, it is not possible to form a uniform insulator layer, and it is evaluated as "X". Further, when there is a difference in solubility due to the difference in the shape of the resin (granular or flake, etc.), In the case where the solubility of the compound (1) was confirmed, the sample bottle containing the THF solution of the compound (1) was allowed to stand still, and the presence or absence of gelation was visually observed in the same manner as above to evaluate the dissolution of THF. The results are shown in Table!. In addition, when the gelation was not confirmed, the THF dissolution stability was evaluated as "〇", and when the gelation was confirmed, it was evaluated as "χ". and then, The solubility of cyclohexanone and toluene was also evaluated in the same manner as the evaluation of the solubility of THF. The results are shown in Table 1. Example 2 2,2-bis(4-hydroxyphenyl) of 〇·2 kg Propane is dissolved in 丨3 kg (7) weight 150866.doc -47- 201123575% of the solution of the air-gasified sodium aqueous solution φ Zhang ^ liquid, mixed with 1.0 kg of digastric simmer, while stirring on one side of the cold methane sheet The phosgene was blown into the mixture at a ratio of 1 L/min until the pH became 9 and then allowed to stand. Then, the reaction solution was allowed to stand still, and the organic layer was obtained in an amount of 2 to 6, molecular end. a methylene chloride solution having an air (4) group oligomer (PC()_A). A mechanical agitator, a mixing wing, and a separator are attached to the reaction vessel, and the above oligomer (310 mL) is added. Dimethyl methane (160 mL), which was added as a terminal terminator to the second butyl butyl butyl phenol (2.3 g), and stirred to mix well. In this solution, the whole amount of Λ Λ The monomer solution was continued to stir for 1 hour.

Furthermore, the monomer solution was prepared as follows: a 195 mk 2 N t sodium nitrite aqueous solution was prepared, and after cooling to room temperature or lower, it was added (M g sulfite wind salt, 29 g bis (2 - thio (4 _ 笑 笑, 7 and glycerol, P-packaged) ethoxy) methane, completely dissolved. The resulting reaction mixture was washed with 2 L of dichlorohydrazine and 1 L of water to 'wash. Separate the lower layer, and then ... times, The dimethyl-manual 1 L water was washed three times in sequence, and the obtained two-gas calcination solution was added dropwise to the solution containing isopropanol; 匕 匕 &lt; water (70 c ), and the resulting precipitate was filtered. And drying, thereby obtaining the following compound (7) as a copolymer.

Compound (2) η / (χ + η) = 0.2 150866.doc -48- 201123575 The structure of the compound (2) was confirmed based on the ih_N] VIr pattern. Further, the specific viscosity (riSP/C) of the dioxo-burning solution of the compound (7) having a concentration of 0.5 g/dl was 0.51 dl/g. A thin film transistor was produced in the same manner as in Example i except that the following compound (7) was used instead of the compound (1) laminated insulator layer, and evaluation was carried out. Further, the solubility of the compound (7) in THF, cyclohexanone and toluene was evaluated in the same manner as in Example W. The results are shown in the table]. (Example 3) (1) Membrane transistor of a build-up insulator layer was evaluated and a thin price was produced in the same manner as in Example 1 except that the following compound (3) was used instead of the compound. Further, in the same manner as in Example 1, the solubility of THF, cycloheximide and toluene of the compound (3) was evaluated in the same manner as in Example 1. The results are shown in Table 1. Further, the ratio of the concentration of the dichloromethane solution of the compound (7) having a f degree of 〇·5 g/dl to the grasped concentration [r(sp/C) is 13 dl/g : [Chem. 41]

Compound (3) In the same manner as in Example 1, except that the same method as in Example i (1) laminated insulator layer was used, a thin film transistor was fabricated. The compound (4) was evaluated for its hydrazine and formazibility. Kie W in the table 150866.doc •49· 201123575 And the concentration of 0.5 g / dl of the compound (4) in methylene chloride solution at 2 〇〇c concentration ratio [riSP / C] is 0.70 dl / g : [化42]

Compound (4) Example 5 A thin film transistor was produced in the same manner as in Example 1 except that the following compound (5) was used instead of the compound (1) laminated insulator layer, and evaluation was carried out. Further, the solubility of the compound oxime, cyclohexanone and toluene was evaluated in the same manner as in Example 。. The results are shown in Table 丨. Further, a dioxane methane solution of the compound (5) having a concentration of 0.5 g/dl was used in 2 Torr. The underlying viscosity hsp/C] is 0.50 dl/g : [Chem. 43]

Example 6 Compound (5)

Further, the concentration was evaluated by the solubility of 〇·5 hexanone and toluene. The results are shown in Table i. Further, the concentration of the gas (2) of the compound (6) at a concentration of 0.5 g/dl is less than the concentration hsp/C] of i 7 dl/g: [Chem. 44] 150866.doc 50- 201123575

In addition, the compound (7) is replaced by the compound (7), and the film is formed in the same manner as in the column 1 of the layer 纟4 (), and the same is the same as in the embodiment. The hexanone and the toluene-soluble M w· formula of the compound (7) were evaluated for the THF, cyclohexanone and sulfonate calculus of the compound (7). The results are shown in the table and the compound with a concentration of 0.5 g/dl.

-g *. p: r f () One of the 虱 methane solutions at 20 〇 C has a specific viscosity [r]SP/C] of 0 5〇 di/g : [Chem. 45]

(Example 8) A thin film transistor was produced and evaluated in the same manner as in the practice of _&quot; except that the following compound (8) was used instead of the compound (1). Further, the solubility of the compound (8) in THF, cyclohexanone and toluene was evaluated in the same manner as in Example i. The results are shown in Table 1. Further, the concentration ratio hsp/C] of the dichlorocarboate solution of the compound (8) having a concentration of G.5 g/dl was 0.50 dl/g: [Chem. 46]

150866.doc 51 - 201123575 Example 9 A thin film transistor was produced in the same manner as in the "n" of "layered insulator layer (1) laminated insulator layer) except that the following compound was used. Further, the solubility of THF, cyclohexanone, and methyl amide of the δ (9) was evaluated in the same manner as in Example 1. The results are shown in the table. Further, the concentration of the compound (9) of the compound (9) at a concentration of 0.5 g/dl is less than the concentration viscosity hsp/C] of 0.50 dl/g: [Chem. 47]

Compound (9) A thin film transistor was produced in the same manner as in Example 1 except that the following compound (10) was used instead of the compound (1) laminated insulator layer, and evaluation was carried out. Further, the solubility of thf, cyclohexanone and toluene of the compound (1〇) was evaluated in the same manner as in Example 。. The results are shown in Table i. Further, a solution of a compound (1 Torr) having a concentration of 0.5 g/dl was dissolved in 2 Torr. The underweight viscosity [T)SP/C] is 0.40 dl/g:

[化48J

- Compound (10) y / (x + y) = 0.2 150866.doc • 52· 201123575 Example 1 1 The same as Example 除 except that the following compound (11) was used instead of the compound (1) laminated insulator layer The film transistor was produced in the same manner, and the solubility of thf, cyclohexyl and terpene of the compound (.11) was evaluated in the same manner as in Example 1. The results are shown in the table in which the concentration of the dichlorohydrazine solution of the compound (11) having a concentration of 〇·5 g/dl is 2 (the specific viscosity [T) SP/C at TC is ο.% d丨/g. : [化49]

A thin film transistor was produced in the same manner as in Example 1 except that the following compound (12) was used instead of the compound (1) laminated insulator layer, and evaluation was carried out. Further, the solubility of the compound (12) in THF, cyclohexanone and terpene was evaluated in the same manner as in Example 1. The results are shown in Table 丄. Further, the methylene chloride solution of the compound (12) having a concentration of 0.5 g/mountion at a concentration of 0.5 dl/g at 2 〇 &lt; t is 0.50 dl/g : [Chem. 50]

150866.doc •53·201123575 In addition to the use of the following chemical substance (13) instead of the compound (1) laminated insulator layer, a thin film transistor was produced in the same manner as in Example 1, and the evaluation was carried out. The solubility of the compound (1)), cyclohexanone and terpene was evaluated in the same manner. The results are shown in Table 丄. Further, the specific viscosity [rjsp/C] of the dioxin-burning solution of the compound (13) having a degree of 0.5 g/dl is 0.50 dl/g at 2〇t&gt;c: [Chem. 51]

Compound (13) Example 14 A thin film transistor was produced in the same manner as in Example 1 except that the following compound (14) was used instead of the compound (?) laminated insulator layer, and evaluation was carried out. Further, the solubility of the compound (丨4) in THF, cyclohexanone and toluene was evaluated in the same manner as in Example 。. The results are shown in Table 1. Further, the specific viscosity [nsp/C] of the dioxane methane solution of the compound (14) having a concentration of 0.5 g/dl is 0-50 dl/g at 2 ° C: [Chem. 52] Compound (14) Comparative Example 1 The same as in the first embodiment except that a double-aged type A polycarbonate resin (manufactured by Idemitsu Kosan 150866.doc -54-201123575, Tarflon A2200) was used instead of the compound (1) laminated insulator layer. The film transistor was produced in the same manner and evaluated. However, the bis-A polycarbonate resin has a low solubility in THF and cannot form a uniform insulator layer. Therefore, the fabricated transistor cannot obtain the FET characteristics. Further, the solubility of THF, cyclohexanone and toluene of bis-A was evaluated in the same manner as in Example 1. The results are shown in Table 1. [Table 1]

Compound mobility [cm2/Vs] Threshold voltage [V] On/off ratio [-] THF soluble THF Dissolution stability Cyclohexanone Solubility Toluene Solubility Example 1 Compound (1) 0.84 -13 1.5χ107 〇〇〇 〇 Example 2 Compound (2) 0.017 -20 9-lxlO4 〇〇〇〇 Example 3 Compound (3) 0.77 - 39 7.3 χ 106 〇〇〇〇 Example 4 Compound (4) 1.4 -27 Ι.ΟχΙΟ7 〇〇〇 〇 Example 5 Compound (5) 0.1 -23 9.3 xlO6 〇〇〇〇 Example 6 Compound (6) 0.46 - 14 4.8 χ 106 〇〇〇〇 Example 7 Compound (7) 0.67 -22 3.5 χ 107 〇〇〇〇 Example 8 Compound (8) 0.54 - 14 1.0x107 〇〇〇〇 Example 9 Compound (9) 0.81 -28 8.3 χΙΟ 6 〇〇〇〇 Example 10 Compound (10) 0.52 -15 8.9 χ 106 〇〇〇〇 Example 11 Compound (11) 0.60 -20 9.8 χ 106 〇〇〇〇 Example 12 Compound (12) 0.23 -20 9. 〇χ 106 〇〇〇〇 Example 13 Compound (13) 0.11 - 21 8.5 χ 106 〇〇〇〇 Example 14 Compound (14) 0.092 -24 8.7x106 〇〇〇〇Comparative Example 1 bis-A - - - X X X X As apparent from Table 1, it was confirmed that the compounds (1) to (14) of the polycarbonate of the present invention have sufficient solubility in a THF solvent. Further, it was confirmed that the polycarbonate material having a high solubility in THF has substantially sufficient solubility to the other non-li-based solvent for the insulating layer for a film-forming film transistor. 150866.doc -55- 201123575 体=Boundary: It is well known that the state of the insulator layer and the organic semi-conductive binary r1 constituting the organic TFT will produce a mobility, a threshold voltage or an on/off ratio. Vol. 4 (2008) 432-437). The state of the interface between the insulator layer and the organic semiconductor layer in the organic TFT of this month is not true, but for example, the surface of the insulator layer which affects the alignment of the organic semiconductor, and the surface of the insulator layer which has an influence on the off-state current is cleaned. The properties, the continuity of the insulator layer (i.e., less cracking, etc.) or the smoothness of the organic semiconductor layer (4) and the like may affect the performance of the organic TFT. On the other hand, the mobility, the threshold voltage, and the on/off ratio of the respective embodiments shown in Table 1 are different. 'Ar of the formula (1) is a bonding group represented by the formula (3) having an asymmetrical structure. The polycarbonate, or an organic TFT of a polycarbonate which is a bonding group represented by the formula (4), exhibits superior properties. Further, the polycarbonate copolymer containing the repeating unit of the formula (II) and the formula (1) is a bonding group represented by the formula (2) in both Ar2 and Ar3, and is introduced repeatedly for the purpose of improving solubility. When the unit is a 9,9-fluorenylene group or a formula (6a), it exhibits superior performance. On the other hand, Ar in the formula (I) is a bond group represented by the formula (2), and is a formula (2a) The bond group represented by 'r3ar4 is a hydrogen atom, a polycarbonate having a ring 5 and a ruler 6 bonded to each other to form a cycloalkylene group, or a bond group having a structure similar to the bond group represented by the formula (2b) In the case of a carbonate, although it has excellent performance, the mobility tends to be small. For this reason, it may be related to the state of the above interface. It is confirmed that the thin film transistor 150866 containing the polycarbonate of the present invention in the insulator layer can be confirmed. .doc -56· 201123575 It can exert sufficient performance when applied to electronic paper or liquid crystal display. In addition, in the case of this case, the solubility of THF is evaluated, but the cooling property of TMf is only evaluation. When the polystearate of the present invention is used as the basis for the "solubility of the non-seletable solvent", the coating thereof is applied. Agent is not limited to THF. Examples of the non-halogen solvent other than THF include aromatic solvents such as benzene, toluene, and xylene; ketones such as cyclohexanone; and ethers such as dioxane; and mercaptoamines. Amines such as amines. The polycarbonate of the present invention can be dissolved in a kind of a material of the same type, so that the insulator layer can be formed into a film by a coating method. Industrial Applicability A film of 4/4 is preferably used in a driving circuit such as an electronic paper or a liquid crystal display, various sensors, and an authentication tag. The embodiments and/or the embodiments of the present invention are described in detail in the context of the present invention and the embodiments of the present invention. / or the embodiment made a variety of changes. Because of these, various changes are included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a thin film transistor of the present invention. Fig. 2 is a view showing another embodiment of the thin film transistor of the present invention. Fig. 3 is a view showing another embodiment of the thin film transistor of the present invention. 150866.doc -57· 201123575 Fig. 4 is a view showing another embodiment of the thin film transistor of the present invention. Fig. 5 is a view showing another embodiment of the thin film transistor of the present invention. Fig. 6 is a view showing another embodiment of the thin film transistor of the present invention. Fig. 7 is a view showing an embodiment of a thin film transistor of the present invention having a substrate and a gate electrode for a connection. [Main component symbol description] 1, 2, 3 ' 4 thin film transistor 10 substrate 12 Si substrate 20 gate electrode 30 insulator layer 32 SiO 2 layer 40 source electrode 42 Au electrode (source electrode) 50 and electrode 52 Au electrode (and electrode) 60 semiconductor layer 70 wire connection electrode 72 Au metal layer 74 Cr metal layer 150866.doc -58-

Claims (1)

201123575 VII. Patent application scope: ι_ - a thin film transistor, which is provided with a gate electrode, a source electrode and a three-terminal of a drain electrode, an insulator layer, and a semiconductor layer at least on a substrate by applying a gate electrode The source-drain current is controlled by a voltage, and the insulator layer is a layer laminated by a coating method, and contains a solubility of at least one solvent selected from the group consisting of tetrahydrofuran, cyclohexanone, and toluene. Heavy /. In the above, the carbonic acid of the repeating unit represented by the following formula (1) is contained: [-53-(-〇-Ar~〇-c4-(I) Ο (wherein, Ar is a divalent aromatic group). 2. The thin film transistor according to the above claims, wherein the above formula (1) is a bonding group represented by the following formula (1) or (2): [Chem. 54] (wherein R1 and R2 are each a hydrogen atom or a carbon number of 3); [Chem. 55] (2) (wherein, R and R π are each a hydrogen atom, an aliphatic group of carbon number 6 , an aryl group having a carbon number of 6 to 12 or a halogen atom. 150866.doc 201123575 X is -0-, -S -, -SO-, -S〇2-, -CO-, 9,9-arylene, a bonding group represented by the following formula (2a), (2b), (2c) or (2d): R5 -C- (2a) R6 (wherein R5 and R6 are each a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms), and may be bonded to Han 6 And a cycloalkyl group having a carbon number of 4 to 12 is formed; [Chem. 57] (wherein R is a hydrogen atom or a carbon group having 1 to 3 carbon atoms, and at least one of R is a condensed group having 1 to 3 carbon atoms); (The bonding group represented by the formula (2c) may be any of an ortho, meta or para); [Chem. 59] R7 150866.doc 2 - 201123575 (in the formula, two of them are bonding groups, as the bonding group η is a single bond or a stretching base, respectively, not a bonding group of r7~r, 2 respectively a sub or carbon number 1 to 4 of the base)). , '. 3. A thin film transistor as claimed in the above formula (1), wherein the bonding group represented by the following formula (3) having an asymmetric structure is formed. An aryl group or a halogen atom of 6 to 12; R 5 and R 16 are mutually different substituents, each being a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms) . 4. The thin film transistor according to claim 2, wherein the formula (1) is the above formula (7), wherein the bond group 'is another bond group represented by the above formula (4), and R and R are bonded to each other to form a carbon number. 4 to 丨 2 of cycloalkylene. 5. The thin film transistor according to Item 1, wherein the enthalpy of the above formula (1) is a bonding group represented by the following formula (4): [Chem. 61] The R and R knives are an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms or a halogen atom). 150866.doc 201123575 6. The thin film transistor of claim 1, the bonding group represented by (5): wherein Ar of the above formula (I) is a formula (In the formula, it is a hydrogen atom or a dentate atom; (5) an aliphatic hydrocarbon group having an inverse number of 1 to 6, and an aliphatic hydrocarbon having a carbon number of 6 to 2 4 to 12; R 〇 is a carbon number of 6 to 〇, respectively. 2 aryl, carbon number base). The number satisfies (6a+6c)/(6a+6b+6c)=0_05~0.95 : [Chem. 63] Such as a thin film transistor of the request, wherein the above formula (1) has the following bonding groups of '() (6b) and (6c) and the bonding groups R is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms or a halogen atom). 8' is a thin film transistor in which at least a gate electrode, a source electrode, and a three-terminal of a gate electrode, an insulator layer, and a semiconductor layer are provided on a substrate, and a source is controlled by applying a voltage to the gate electrode. Interelectrode current; and 150866.doc 201123575 The above insulator layer is laminated by a coating method, and contains at least one selected from the group consisting of tetrahydrofuran, cyclohexanone and toluene, and the solubility of the six/grain agents is 5 Polycarbonate containing 5% by weight or more and comprising a copolymer of a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III) [Chem. 64] '(II) -^-O-Ar3 -. (III) (wherein, A2r2 and Ar3 are each a bonding group represented by the following formula (1) or (2), and Ar2 and Ar3 are mutually different bonding groups: ° [Chem. 65] R2 '~ (1) (wherein R and R2 are each a hydrogen atom or an alkyl group having a carbon number of i to 3); [Chem. 66] (2) (wherein R3 and R4 are each a hydrogen atom, an aliphatic hydrocarbon group having a carbon number of 丨6, an aryl group having a carbon number of 6 to 12 or a halogen atom; and X is -〇, -S ...s〇-,_s 〇2·, _c〇_, 99_ subidyl, a bond group represented by formula (2a), (2b), (2c) or (2d): [Chem. 67] The following R5 I —ο ι R6 ( 2a) (wherein R5 and R6 are each an aliphatic hydrocarbon group having 1 to 6 carbon atoms or 150866.doc 201123575 an aryl group having 6 to 12 carbon atoms, and R5 and R6 may be bonded to each other to form a carbon number of 4 to 12 Cycloalkylene); [Chem. 68] R R (2b) R (wherein R is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and at least one of R is an alkyl group having 1 to 3 carbon atoms); u, only between, and the right of the position (the bond group represented by the formula (2c) can be a neighbor [70] (2d) (2nd two to R:: There are two for the bonding knife, the early key or the extension of the base, not the bonding base ^7~ri or the carbon number of 1~4))). '' 9.:::Improve the middle of the film-transistor crystal," the upper sputum to tetrahydrogen. The solubility of the scream is 7% by weight or more. 4 10 · If you are looking for items 1 to 8 - the ^ transistor, the layer is an organic semiconductor. &quot; above the above half 150866.doc