201123474 ji /20twf.doc/d 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種太陽能電池及其製作方法，且特 別是有關於-種’¥體光電轉換效率良好的薄膜太陽能電池 及其製作方法。 【先前技術】 隨著環保意識抬頭，節能減碳的概念逐漸受眾人所重 視，再生能源的開發與利用成為世界各國積極投入發展的 重點。其中，可將太陽光轉換成電能的太陽能電池更是目 前最被看好的明星產業，因此眾家廠商紛紛投入太陽能電 池的製造。目前，太陽能電池的關鍵問題在於其光電轉換 效率的提升，而能夠提升太陽能電池的光電轉換效率即意 味者產品競爭力的提升。 、，1為習知一種薄膜太陽能電池的上視示意圖。圖2 為沿著圖1中A-A’線段的斷面示意圖。請參照圖1盥圖2, 薄膜太陽能電池100包括基板11〇、第一導電層12〇'、光伏 層B0以及第二導電層140。其中，薄膜太陽曰能電池削 具有彼此串聯的多個光伏單元1〇2。光伏層13〇為具有 接面的光電轉換結構。 ，例來說，當光線L由外侧照射至薄膜太陽能電池 100時，光伏層13〇適於受光能而產生電子電洞對，並藉 由PIN接面所形成的内建電場使電子與電洞分別往第一 ^ 電層120以及第二導電層14〇移動而形成光電流，而產生 201123474 25 Jl/2Utwf.d〇c/d 儲存形態，此時若外加負載電路或電子裴置， 便可Μ魏蚊魏妓置絲_。 膜太:雷^受到製程變異或是其他因素的影響，在薄 小可心以巾’各光伏單元勝所產生的光電流大 月匕胃林同’而造成光電流不匹配的情況。詳言 二單元舰是採用串聯的方式電性連接，而。當部 元102所所產生的光電流小於其他多數的光伏單 核生的光電流，_薄膜太陽能電池⑽整體的 =電轉換效率會受到光電流較小的光伏元件搬而有 【發明内容】 本發服供—闕膜太陽㈣池，其具 轉換效率。 兀电 、、本發明又提出一種製造薄膜太陽能電池的製造方 法，可製作出上述的薄膜太陽能電池。 ，本，明提出-種薄膜太陽能電池’包括基板、多個第 一光伏單元以及至少-第二光伏單元。第—絲單元配置 於基板上並適於個別產生光電流，其中每個第一光伏單元 包括第-導電層、光伏層以及第二導電層。第—導電層配 置於基板上。光伏層配置於第一導電層上並具有一開口， 且此開口《第-導電層。第二導電層配置於光伏層上並 透過上述開口而與相鄰的第一光伏單元的第一導電層電性 連接。第二光伏單元配置於基板上，其中t多個第二光伏 201123474 ^ ά 1 /20twf doc/d 單70所產生的光電流不同時，第二光伏單元電性連 部分第-光伏單元’以使整體的多個第—光伏單二 的光電流匹配(current matching)。 、 二在本發明之一實施例甲，上述至少一第二 延伸方向垂直於第-光伏單元的延伸方向。 早 ％的 在本發明之-實施例中，上述每一第二光 第-導電層、光伏層以及第二導電層。第—導電層配 基板上，而光伏層配置於第—導電層上，且第_ ^ ‘ 當第二光伏單元電性連接至少;2 = 早兀時第一光伏單元的第一導電層盘第—弁。 層連接，而第二光伏單元的第二導電= 先伙早兀的第二導電層電性連接。 电弟 兩個t發明之—實施例中，上述第二光伏單元的數量為 具有伏二多:第二光伏單_1 同或不相同。弟一先伙早兀的光伏區的面積可為相 第明之—實施例中，上述多個第二光伏單元位於 弟先伙早几的同一側或不同側。 凡位於 在本發明之—實施例中，上述 合物半導體薄膜或=合/。矢化°物半導體溥膜或有機化 在本發明之—實施例中，上述元素週期表四族元素半 5 201123474f / ^w^vi.doo/d 導，膜包含有f晶相、多晶相、非晶相與微 素，膜、石夕7C素薄膜、錯元素薄膜、碳化石夕薄膜或是石夕化 錯薄膜至少其一或是其纟且合。 在本發胡之-實施例中’上述元素週期表三五族化人 =導體薄膜包含有碎化鎵(GaAs)化合物薄膜或磷化“ (InGaP)化合物薄膜至少其一或是其組合。 f本發明之一實施例中，上述元素週期表二六族化人 (Θ幻化&物缚膜、蹄化錦(cdTe)化合物薄膜至少其—或 5BL° 在本侧之-實施财，上财機化合辨導 匕s共輛向分子施體與奈米魏受體之混合物。 、 在本發明之-貫施例中，上述光伏層為單層 2雙層Μ轉換層、三層光電轉換層、或電 轉換層的堆疊結構。 尤冤 明導3發:例中’上述第一導電層的材料為透 =電層’而弟一層包含反射層與透明導電層至少其 Ϊ本發明之—實施例中，上述第二導的材料為透 :導電層’而第一導電層包含反射層與透明導電層至= 本發明又提出-種薄膜太陽能電池的製造方 =列步驟。首先，提供—基板。，形成 = 伏早凡於基板上。接著，形成至卜第二級單^基^ 201123474„ i;繼=檢，一光伏單元所產生的光電流的大小。 整體二的第，性連接於至少部分第-光伏單 matching 伏早凡所提供㈣電流匹配(罐ent 在本發明之一實施例中，卜 二 … ϊ=Πί，於基板：成第了 第-光伏單元的第4i;大=於基板上’以覆蓋多個 形成多個開口，其中多個A、、v _化光伏材料層以 的第-導電層。再來個第-光伏單元 覆蓋光伏材料層。_，同時 以 的第-先伏單元的第層透過開口與相鄰 法包二單元的方 =圖案化第一導電材料層以形成第二光 導===板“:覆=—光 層以形成第二綠以喊伏層鮮二導伏材料 在本發明之一實施例中，上述形成多個開 進仃雷射製程、_製程或是機械力移除製程 匕 7 201123474 j 1 /-twiwf.doc/d 在本發明之一實施例十，上述將第二光伏單元 接於至少部分第—光伏單元的方法包括下列步驟。首連 將，二光伏單元的第—導電層電性連接於至少部分’ 伏單元的第-導電層。紐，將第二紐單元:光 層電性連接於至少部分第—光伏單元的第二導電層'^電 f本發明之一實施例中’上述將第二光伏單“ 接於至少部分第-絲單元的方法包括雷射銲接製程&連 基於上述，本實施例之薄膜太陽能電池具有 =的設^ ’因此當多個第—光伏單元所提供的光= 可藉由第二光伏單元與部分的第—光伏單元電= 以使Φ接的光電流匹配，進而可提高整體的光 :製=法本發明亦提供-種製作上述的薄膜太陽‘ 為讓本發明之上述特徵和優點能更明顯易懂 牛貫施例’並配合所附圖式作詳細說明如下。 ， 【實施方式】 圖3.為本發明—實施例之薄膜太陽能電池的上視示音 、險此電池的斷面示意圖，而圖6為沿圖3之c_c， 每^不之第一光伏單元與第二光伏單元電性連接之-種 二：方式的斷面示意圖。請同時參照圖3、圖4與圖5，薄 ^陽能電池勘包括基板21G、多個第—光伏單元2〇2 個第一光伏單元204。在本實施例中，基板21〇例 201123474 t #20twf.doc/d 如是一透明基板，# :破璃基板。第二光伏單元204例如 沿一延伸方向D2延伸，而第一光伏單元2〇2例如是以— 另-延伸方向m延伸’其中延伸方向D2例如是垂直於 伸方向D1，意即第-光伏單元2〇2可以是沿延伸方向叱 排列’此處僅為舉舰明，此部分可視使用者的需求而 本發明並不以此為限。 多個第-光伏單元202配置於基板210上，且這也 -光伏單元202受光後分別會產生光電流，其中每個I 光伏單元搬包括第-導電層22〇、光伏層no以 導電層240。詳細而言，第一導電層22〇配置於基板^ 上，而光伏層230配置於第一導電層22〇上並具有一開口 中開口 Η曝露第一導電層22〇。第二導電層2二己 + :光伙層230上，且第二導電層透過開口 η而盘相 _弟-光伏單元2G2的第-導電層22G電性連= 串確切地說，上述的第—光伏單元和列如是^ 串耳外的方式彼此電性連接。 人 甘^本實施财，第—導電層22G例如是透明導電層， 可以是氧化辞、銦錫氧化物、銦鋅氧化物、銦錫鋅 乳化物、銘錫氧化物、靖氧化物、録銦氧化物、 化物、鎵辞氧化物或錫氣氧化物至少其中之—另—去 施例中’第—導電層22〇也可以是—反射層（未 ϊϊϋίΓ明導電層的疊層’其中反射層可位於透明 =電層與基板之間，而反射層的材質可以使賴(Α1) (Ag)、銷(Mo)或銅(Cu)等反射性較佳的金屬。 - 9 201123474 i. I wf.doc/d 在本實施财，光伏層23G的材_何以是元素週 期5四族元料導體_、元素職表三五魏合物半導 素週期表二六族化合物半導體薄膜或有機化合 膜或其組合。詳細而言，元素週期表四族元和 +=體賴例如是單晶相、多晶相、非晶相與微晶相之碳 3薄膜、♦元素薄膜、錯元素薄膜、碳化梦薄膜或石夕化 其—’或是其組合。元麵練三五族化合物 +導體溥膜例如是砷化鎵(GaAs)化合物 =aP)化合㈣膜至少其—，或是其組合。元素週期表: A叙化合物半導體薄膜例如是銅錮碼(CIS)化合物薄膜、銅 銦鎵石西(CIGS)化合物薄膜、碲化録(CdTe)化合物薄膜至少 其了:或是，組合。此外’上述有機化合物半導體薄膜則 可以是共軛高分子施體與奈米碳球受體之混合物。 此外，上述光伏層230的膜層結構例如是採用p型半 導體與N型半導體所構成的pN接面的單層光電轉換結 構’或者是P型半導體、本㈣與N料導體所構成的 接面的單層光電轉換結構，惟本發明不限於此。在直 他的實施财，光伏層23G也可以採用雙層光電轉換層 (tandemjUnCti〇n)、三層光電轉換層(triple junction)、或 三層以上光電轉換層的堆疊結構。 在本實施例巾，第二導電層24〇可以是採用上述的透 明導電層所提及的材質，在此不再贅述。此外，第二導電 層240更可以包括反射層，其中反射層位於上述透明導電 層上。在此需要說明的是，#第二導電層24〇具有反射層 201123474 ji /20twf.doc/d 時，第一導電層220僅可為透明導電層。反之，當第一導 電層220具有反射層的設計時，第二導電層24〇僅可為透 明導電層，而不具有上述的反射層。在一實施例中，第— s導電層220與第二導電層24〇也可以皆為透明導電層，而 無反射層的配置。換言之，此部分的設計可依使用者的需 求而作調，（例如是製作雙面受光的薄膜太陽能電池或^ 面受光的薄膜太陽能電池），上述僅為舉例說明，非限於 ith 〇 請繼續參考圖3與圖5，第二光伏單元綱配置於美 板210上，其中當多個第一光伏單元搬所產 雷= 不同時，第二光伏單元綱連接至少部分第—光& 兀搬，以使整體的多個第—光伏單元2〇2所提供的光電 ^r(Tenlmatching) ° 5 200中’由於弟-光伏單元漁是採用串聯的方式電性連 若部分的第Γ光伏單元202所產生的光電流小於 二忠夕·#第一光伏單兀202所產生的光電流，此時整體 的光電轉換效率便會受到光電流不匹配（c_t unm:hing)的因素而有所限制。因此，若將本實施例之 以與產生光電流較小的第-光伏單元202 ==式電性連接’以提高這些第-光伏單元搬的 輸出，猎以使所有串接的第—光伏單元2 ^匹配，如此一纟，薄膜太陽能電池200整體的光雷韓換 效率將可獲得提升。 體的先電轉換 在本實施例中，第二光伏單元2〇4包括—第—導電層 201123474 ji/^uiwf.d〇c/d =、：光伏層230a以及一第二 述弟一光伏單元202之構件，筮 喊賢上 導電層220a係配置於_21〇第；~先伏早元204中的第一 第-導電層220a上:^ =上，而光伏層通配置於 上。在—者於射/ —導電會240a配置於光伏層230a 座生的先電流小於其他的笫 流，列第二井按里-ΓΛ 先伏早兀202所產生的光電 連接，適於與此第—光伏單元202電性 他的第-光伏二t伏單元2〇2所提供的光電流可匹配其 光伏單元202 生=電流。詳細而言’第一 光伙早兀204的雷φψ;查-+- —p a, :第 =¥電層2施電性連接第一光伏單元搬的第 及透稍接_ W2使第二絲單元綱的第 ，電性連接第—光伏單元202的第二導電層 40。也就疋說，第二杏你留-ΟΛ m 與此產生的光_小=二是=並聯的方式 其中銲接: 《先早70202電性連接。 、中^紅域Wb W2例如各為―録接點，但不限於此。 圖=為本發明另—實施例之薄膜太陽能電池上視示咅201123474 ji /20twf.doc/d VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell and a method of fabricating the same, and in particular to a thin film solar energy having good photoelectric conversion efficiency Battery and its making method. [Prior Art] With the rise of environmental awareness, the concept of energy conservation and carbon reduction has gradually been emphasized by the audience. The development and utilization of renewable energy has become the focus of active development in all countries of the world. Among them, solar cells that convert sunlight into electrical energy are the most promising star industries, so many manufacturers have invested in the manufacture of solar cells. At present, the key problem of solar cells is that their photoelectric conversion efficiency is improved, and the photoelectric conversion efficiency of solar cells can be improved, that is, the competitiveness of products is improved. 1 is a schematic top view of a conventional thin film solar cell. Figure 2 is a schematic cross-sectional view taken along line A-A' of Figure 1. Referring to FIG. 2 and FIG. 2, the thin film solar cell 100 includes a substrate 11A, a first conductive layer 12', a photovoltaic layer B0, and a second conductive layer 140. Among them, the thin film solar cell battery has a plurality of photovoltaic cells 1 〇 2 connected in series with each other. The photovoltaic layer 13 is a photoelectric conversion structure having junctions. For example, when the light L is irradiated from the outside to the thin film solar cell 100, the photovoltaic layer 13 is adapted to receive an electron hole pair by the light energy, and the electron and the hole are formed by the built-in electric field formed by the PIN junction. Moving to the first electric layer 120 and the second conductive layer 14 respectively to form a photocurrent, and generating a storage pattern of 201123474 25 Jl/2Utwf.d〇c/d, at this time, if a load circuit or an electronic device is externally applied, ΜWei mosquito Wei Wei set silk _. Membrane too: Thunder is affected by process variation or other factors, and the photocurrent mismatch is caused by the photocurrent generated by each photovoltaic unit winning in the thin film. The two unit ships are electrically connected in series. When the photocurrent generated by the element 102 is smaller than that of most other photovoltaic mononuclear cells, the overall conversion efficiency of the thin film solar cell (10) is affected by the photovoltaic element having a small photocurrent. [Invention] The hair supply is supplied to the sun (four) pool, which has conversion efficiency. The present invention further proposes a method of manufacturing a thin film solar cell, which can produce the above thin film solar cell. A thin film solar cell' includes a substrate, a plurality of first photovoltaic units, and at least a second photovoltaic unit. The first wire unit is disposed on the substrate and adapted to generate photocurrents individually, wherein each of the first photovoltaic units includes a first conductive layer, a photovoltaic layer, and a second conductive layer. The first conductive layer is disposed on the substrate. The photovoltaic layer is disposed on the first conductive layer and has an opening, and the opening is a “first conductive layer”. The second conductive layer is disposed on the photovoltaic layer and electrically connected to the first conductive layer of the adjacent first photovoltaic unit through the opening. The second photovoltaic unit is disposed on the substrate, wherein when the photocurrents generated by the plurality of second photovoltaics 201123474^ ά 1 /20twf doc/d 70 are different, the second photovoltaic unit is electrically connected to the partial photo-photovoltaic unit The overall multiple-photovoltaic single-current current matching. In an embodiment of the invention, the at least one second extending direction is perpendicular to the extending direction of the first photovoltaic unit. In the embodiment of the present invention, each of the second optical-conductive layers, the photovoltaic layer, and the second conductive layer. The first conductive layer is disposed on the substrate, and the photovoltaic layer is disposed on the first conductive layer, and the first photo-electric layer is electrically connected at least when the second photovoltaic unit is at least; 2 = the first conductive layer of the first photovoltaic unit is earlier than the first conductive unit —弁. The layers are connected, and the second conductive layer of the second photovoltaic unit is electrically connected to the second conductive layer. In the embodiment, the second photovoltaic unit has the same number of volts: the second photovoltaic unit is the same or different. The area of the photovoltaic zone in which the first brother is early can be phased out - in the embodiment, the plurality of second photovoltaic units are located on the same side or on different sides of the younger brother. In the embodiment of the present invention, the above semiconductor thin film or = combined /.矢 ° 物 溥 溥 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 2011 2011 2011 2011 At least one of the amorphous phase and the micro-vegetation, the film, the Shih 7C film, the wrong element film, the carbonized stone film or the Shi Xihuan film may be combined with each other. In the present invention, the above-mentioned periodic table of the three-five-grouped person=conductor film contains at least one or a combination of a film of a gallium arsenide (GaAs) compound or a film of a phosphating (InGaP) compound. In one embodiment of the present invention, the above-mentioned periodic table of the six-hexagonized human (Θ 化 & & 物 物 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The organic compound is a mixture of a molecular donor and a nano-Wei receptor. In the embodiment of the present invention, the photovoltaic layer is a single-layer, two-layer, two-layer conversion layer and a three-layer photoelectric conversion layer. Or a stacking structure of the electric conversion layer. In the example, the material of the first conductive layer is a transparent layer, and the layer of the second layer comprises a reflective layer and a transparent conductive layer. In the example, the second conductive material is a transparent conductive layer and the first conductive layer includes a reflective layer and a transparent conductive layer to the manufacturing method of the thin film solar cell. Forming = volts on the substrate. Then, forming the second Single ^ base ^ 201123474 „ i; following = check, the size of the photocurrent generated by a photovoltaic unit. The overall two of the first, the sexual connection to at least part of the - photovoltaic single match volts provided by the (four) current matching (can ent in In one embodiment of the present invention, the second substrate is formed on the substrate: the fourth surface of the first photovoltaic unit; the large surface is formed on the substrate to cover a plurality of openings, wherein the plurality of A, v _ the first conductive layer of the photovoltaic material layer. The first photo-photovoltaic unit covers the photovoltaic material layer. _, and the first layer of the first-first volt unit and the adjacent two-cell unit Patterning the first layer of conductive material to form a second light guide ===plate ": overlay = - light layer to form a second green to shout the layer of fresh two-conducting material. In one embodiment of the invention, the plurality of layers are formed as described above Opening a laser process, a process, or a mechanical force removal process 2011 7 201123474 j 1 /-twiwf.doc/d In an embodiment 10 of the present invention, the second photovoltaic unit is connected to at least a portion of the photovoltaic unit The method includes the following steps: First, the first conductive layer of the second photovoltaic unit a second conductive layer electrically connected to at least a portion of the second photovoltaic layer of the photovoltaic cell The above method for "connecting a second photovoltaic sheet to at least a portion of the first-wire unit includes a laser soldering process & based on the above, the thin film solar cell of the present embodiment has a design of =" Provided light = by the second photovoltaic unit and part of the first photovoltaic unit = to match the photocurrent of the Φ, thereby improving the overall light: the method of the invention also provides the production of the above-mentioned thin film sun The above features and advantages of the present invention will be more apparent and understood in the light of the accompanying drawings. [Embodiment] FIG. 3 is a schematic cross-sectional view showing a top view of a thin film solar cell according to the present invention, and FIG. 6 is a cross-sectional view of the battery along the c_c of FIG. A schematic cross-sectional view of the second type of method electrically connected to the second photovoltaic unit. Referring to FIG. 3, FIG. 4 and FIG. 5 simultaneously, the thin solar cell includes a substrate 21G, and a plurality of first-photovoltaic cells 2 and 2 first photovoltaic units 204. In the present embodiment, the substrate 21 is an example of 201123474 t #20twf.doc/d If it is a transparent substrate, #: a glass substrate. The second photovoltaic unit 204 extends, for example, in an extending direction D2, and the first photovoltaic unit 2〇2 extends, for example, in a different extension direction m, wherein the extending direction D2 is, for example, perpendicular to the extending direction D1, that is, the first-photovoltaic unit 2〇2 may be arranged along the direction of extension ‘here only for the ship, this part may be based on the needs of the user and the invention is not limited thereto. The plurality of first-photovoltaic cells 202 are disposed on the substrate 210, and this also-photovoltaic cells 202 respectively generate photocurrents, wherein each of the I photovoltaic cells includes a first conductive layer 22, and a photovoltaic layer no to a conductive layer 240. . In detail, the first conductive layer 22 is disposed on the substrate, and the photovoltaic layer 230 is disposed on the first conductive layer 22 and has an opening in the opening and exposing the first conductive layer 22A. a second conductive layer 2 bis+: on the optical layer 230, and the second conductive layer passes through the opening η and the first conductive layer 22G of the disk phase-photovoltaic cell 2G2 is electrically connected = string, specifically, the above - Photovoltaic cells and columns are electrically connected to one another in such a way as to be outside the ear. The first conductive layer 22G is, for example, a transparent conductive layer, and may be an oxidized word, an indium tin oxide, an indium zinc oxide, an indium tin zinc emulsion, a tin tin oxide, a cerium oxide, or a recording indium. At least one of the oxide, the compound, the gallium oxide or the tin oxide, in the other embodiment, the first conductive layer 22 can also be a reflective layer (a laminate of conductive layers) It can be located between the transparent layer and the substrate, and the material of the reflective layer can be a metal with good reflectivity such as 赖1 (Ag), pin (Mo) or copper (Cu). - 9 201123474 i. I wf .doc/d In this implementation, the material of the photovoltaic layer 23G is the elemental period 5 four-membered element conductor _, the elemental table of the three-five-component semi-conductor periodic table of the hexa-group compound semiconductor film or organic film Or a combination thereof. In detail, the four elements of the periodic table and the += body are, for example, a single crystal phase, a polycrystalline phase, a carbon phase film of an amorphous phase and a microcrystalline phase, a ♦ elemental film, a wrong element film, carbonization Dream film or Shi Xihua-- or a combination thereof. Yuan-faced three-five compound + conductor film, for example It is a gallium arsenide (GaAs) compound = aP) compound (four) film at least - or a combination thereof. Periodic Table of the Elements: A compound semiconductor thin film is, for example, a copper (CIS) compound film, a copper indium gallium (CIGS) compound film, or a CdTe compound film, at least: or a combination thereof. Further, the above organic compound semiconductor thin film may be a mixture of a conjugated polymer donor and a nanocarbon balloon acceptor. In addition, the film layer structure of the photovoltaic layer 230 is, for example, a single-layer photoelectric conversion structure using a pN junction formed by a p-type semiconductor and an N-type semiconductor, or a junction formed by a P-type semiconductor, the present (four) and an N-material conductor. The single layer photoelectric conversion structure, but the invention is not limited thereto. In the implementation of the scheme, the photovoltaic layer 23G may also adopt a double-layer photoelectric conversion layer (tandemjUnCti〇n), a three-layer photoelectric conversion layer (triple junction), or a stacked structure of three or more photoelectric conversion layers. In the embodiment, the second conductive layer 24A may be the material mentioned in the above transparent conductive layer, and details are not described herein. In addition, the second conductive layer 240 may further include a reflective layer, wherein the reflective layer is located on the transparent conductive layer. It should be noted that when the second conductive layer 24 has a reflective layer 201123474 ji /20twf.doc/d, the first conductive layer 220 can only be a transparent conductive layer. On the contrary, when the first conductive layer 220 has a design of a reflective layer, the second conductive layer 24 〇 can only be a transparent conductive layer without the above-mentioned reflective layer. In an embodiment, the first s conductive layer 220 and the second conductive layer 24 〇 may also be transparent conductive layers without a reflective layer configuration. In other words, the design of this part can be adjusted according to the needs of the user (for example, making a double-sided light-receiving thin-film solar cell or a thin-film solar cell with a light-receiving surface). The above is only an example, not limited to ith 〇 Please continue to refer to 3 and FIG. 5, the second photovoltaic unit is disposed on the US board 210, wherein when the plurality of first photovoltaic units are loaded and the lightning is different, the second photovoltaic unit is connected to at least part of the light-and-light In order to make the photo-electrical unit (Tenlmatching) of the whole plurality of first-photovoltaic units 2〇2, the 'photovoltaic unit is electrically connected to the third unit of the photovoltaic unit 202 in series. The generated photocurrent is smaller than the photocurrent generated by the second photovoltaic unit #1, and the overall photoelectric conversion efficiency is limited by the photocurrent mismatch (c_t unm:hing). Therefore, if the present embodiment is to be electrically connected to the first photovoltaic unit 202 having a smaller photocurrent, the output of the first photovoltaic unit is increased, so that all the first photovoltaic units are connected in series. 2 ^ Matching, as a result, the overall light-replacement efficiency of the thin-film solar cell 200 will be improved. In the present embodiment, the second photovoltaic unit 2〇4 includes a first conductive layer 201123474 ji/^uiwf.d〇c/d =, a photovoltaic layer 230a, and a second solar cell The member of 202, the screaming upper conductive layer 220a is disposed on the _21 〇 first; the first first conductive layer 220a in the first volt early 204: ^ = upper, and the photovoltaic layer is disposed on the upper. In the case where the emitter/conductor 240a is disposed in the photovoltaic layer 230a, the current is less than the other turbulence, and the second well is connected to the photoelectric connection generated by the ΓΛ-ΓΛ 兀 兀 兀 202, which is suitable for this - Photovoltaic unit 202 is electrically charged with its photo-current provided by the first photovoltaic dual-tvolt cell 2〇2 to match its photovoltaic cell 202 to current. In detail, 'the first light gang early 204 雷 ψ ψ; check-+--pa, : the first = electric layer 2 electrically connected to the first photovoltaic unit to move the first and slightly _ W2 to make the second wire The second conductive layer 40 of the photovoltaic cell 202 is electrically connected to the first. In other words, the second apricot you leave - ΟΛ m and the light produced by this _ small = two is = parallel way. Among them: welding: "70 early electrical connection. The medium ^ red domain Wb W2 is, for example, a "recording point", but is not limited thereto. Figure = is a view of the thin film solar cell of another embodiment of the present invention
薄膜太陽能電池獅具有類似於上述i :太，池200的構件’其中相 J 表不，此處便不再重述。. 々丨测不就 伏在本貫關巾，_太電池具有三個第-光 會對庫到—個第並且母四個苐一光伏單元搬 t應到_一先伙早元、鳩或⑽。舉例來 12 201123474 —- * (20twf,d〇c/d 二：於第一光伏單元3〇4a的四個第-光伏單元 ^ 1伏單* 202所產生的光電流大小為 5日/可β藉由第二光伏單元304a與光電流為最小的 光伏單瓜观電性連接，以進行四個第—光伏單 =的^電流匹配。而類似地，第二光伏單元3 04b以及 弟一，單元紙也可以利用相同的方式，與相鄰的其中 :個^光伏單元2°2電性連接，以進行光電流匹配。如 ^來’薄膜太陽能電池3〇〇整體的光電轉換效率亦可獲 零 付提升。 “、、:而’本發明並不限制第二光伏單元撕&、3㈣或 3〇4c的數量、《是與第二光伏單元3〇如、或魏對 應，第-光伏單几2G2之數量。在其他實施例中，第二光 伏單元f4的數量也可以是兩個、或是三個以上，而與第 :光伏單元304a、304b或304c對應的第一光伏單元2〇2， 其數量也可以視需要而加以改變。 另一方面，在薄膜太陽能電池3〇〇中，第二光伏單元 參 如4a、304b或3〇4c分別具有光伏區ρι、p2、朽，且多個 第二光伏單元304a、304b或304c的光伏區P1、p2、p3 的面積為彼此相同，惟本發明不限於此。在本發明又一實 施=中，如圖8所示的薄膜太陽能電池4〇〇，其中第二光 伏單元4G4a的光伏區P4、第二光伏單元姻b的光伏區 P5、以及第二光伏單元4〇4c的光伏區％的面積為彼此 相同。 此外，在圖7所舉的實施例中，第二光伏單元3〇如、 13 201123474 八 w£doc/d 304b、304c均位於第—伞你„0 _ 第-光伏單元202在延伸方侧職’也就是 舉，例中，第二光伏單元二的= 位於第十光伏單元2〇2的— 。也冋樣疋 的實施例中，如圖9所 a/而，在本發明其他 二光伏單元5G4a位於第二伏：太陽，電池5。。，其中第 第二光伏單元麟則位於；1 早；^2的=施，而 2〇2b’也就是說，第二弁 早兀202的另一側 分別是位於第—光伏單儿咖與第二光伏單元504b 端。也就是說，本發二;相對的兩 ZZtZ ； 多個第—志伏單元以 並使廷些子單元分別與 利用第二光伏單元來產^光電:電性連接。藉此，可充分 几在薄膜太陽能電池中所佔之=積而不會浪費第二光伏單 中是嶋方法，其 意圖’依照各個步驟來加以說明線段位置上的斷面示 圖1〇A至圖10G為本 一 池的製作流程圖。請先參照圖10:貫膜太陽能電 A，百先，提供上述的基 14 201123474 ^ 31 /20t\vf.d〇c/d 板210，基板210例如是玻璃基板。 然後，如圖10B所示，於基板上形成第—導電材料層 C卜在本實施例中，第一導電材料層C1例如是使用上述 所提及的透明導電層的材質，而形成第一導電材料層C1 的方法例如是使用濺鍍法(sputtering)、金屬有機化學氣相 沈積（chemical vapor deposition，CVD)法、或蒸錢法 (evaporation)。 .接著，如圖1〇C所示，圖案化第r導電材料層C1以-形成各第一光伏單元202的第一導電層220。在本實施例 中，圖案化第一導電材料層C1的方式主要是雷射钮刻製 程作為實施範例，在其他可能的實施例中，也可以是採用 其他適當的餘刻製程。 接著，如圖10D所示，形成光伏材料層M於基板上， 以覆蓋多個第一光伏單元202的第一導電層220。在本實 施例中，形成光伏層230的方式例如是例如是採用射頻電 漿辅助化學氣相沉積法（Radio Frequency Plasma Enhanced _ Chemical Vapor Deposition, RF PECVD )、超高頻電漿輔助化學 氣相沉積法（Very High Frequency Plasma Enhanced ChemicalThe thin film solar cell lion has a similar structure to the above i: too, the component of the cell 200, where the phase J is not, and will not be repeated here. 々丨 不 不 不 不 不 不 不 不 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ (10). For example, 12 201123474 --- * (20twf, d〇c / d 2: the photocurrent generated by the 4th photovoltaic unit of the first photovoltaic unit 3〇4a ^ 1 volt single * 202 is 5 days / can be β The second photovoltaic unit 304a is electrically connected to the photovoltaic single cell with the smallest photocurrent to perform four first-photovoltaic single-current matching. Similarly, the second photovoltaic unit 3 04b and the first one, the unit The paper can also be electrically connected to the adjacent ones of the photovoltaic cells by 2° 2 in the same manner for photocurrent matching. For example, the photoelectric conversion efficiency of the thin film solar cell 3 亦可 can also be zero. ",, and: 'The invention does not limit the number of second photovoltaic unit tear & 3 (4) or 3〇4c, "is corresponding to the second photovoltaic unit 3, or Wei, the first - photovoltaic single The number of 2G2. In other embodiments, the number of second photovoltaic units f4 may also be two, or more than three, and the first photovoltaic unit 2〇2 corresponding to the: photovoltaic unit 304a, 304b or 304c, The number can also be changed as needed. On the other hand, in the thin film solar cell 3 In the middle, the second photovoltaic unit reference 4a, 304b or 3〇4c has a photovoltaic region ρι, p2, and the area of the photovoltaic regions P1, p2, p3 of the plurality of second photovoltaic units 304a, 304b or 304c are each other The invention is not limited thereto. In still another embodiment of the present invention, the thin film solar cell shown in FIG. 8 has a photovoltaic region P4 of the second photovoltaic unit 4G4a and a photovoltaic of the second photovoltaic unit The area of the photovoltaic area % of the area P5 and the second photovoltaic unit 4〇4c is the same as each other. Further, in the embodiment illustrated in Fig. 7, the second photovoltaic unit 3 is, for example, 13 201123474 八w£doc/d 304b , 304c are located in the first - umbrella you „0 _ first-photovoltaic unit 202 in the extension side of the job', that is, in the example, the second photovoltaic unit 2 = located in the tenth photovoltaic unit 2 〇 2 - also In the embodiment of FIG. 9, as shown in FIG. 9a, in the other two photovoltaic units 5G4a of the present invention, the second volt: the sun, the battery 5, wherein the second photovoltaic unit is located; 1 early; = 施, and 2〇2b', that is, the other side of the second 弁 early 兀 202 is located in the first light伏单儿咖啡 and the second photovoltaic unit 504b end. That is, the second two; the opposite two ZZtZ; a plurality of first-ZhV units to make the sub-units and the second photovoltaic unit to produce : Electrical connection. Thereby, it can fully occupy the product in the thin film solar cell without wasting the second photovoltaic method, which is intended to describe the cross-section of the line segment according to each step. Fig. 1A to Fig. 10G are flow charts of the production of the first cell. Please refer to Fig. 10: Transmembrane solar power A, Bai Xian, provide the above-mentioned base 14 201123474 ^ 31 /20t\vf.d〇c/d board 210. The substrate 210 is, for example, a glass substrate. Then, as shown in FIG. 10B, a first conductive material layer C is formed on the substrate. In the present embodiment, the first conductive material layer C1 is formed by using a material of the above-mentioned transparent conductive layer, for example, to form a first conductive material. The method of the material layer C1 is, for example, sputtering, metal chemical vapor deposition (CVD), or evaporation. Next, as shown in FIG. 1A, the nth conductive material layer C1 is patterned to form the first conductive layer 220 of each of the first photovoltaic cells 202. In this embodiment, the manner of patterning the first conductive material layer C1 is mainly a laser button engraving process as an implementation example. In other possible embodiments, other suitable remnant processes may also be employed. Next, as shown in FIG. 10D, a photovoltaic material layer M is formed on the substrate to cover the first conductive layer 220 of the plurality of first photovoltaic cells 202. In this embodiment, the photovoltaic layer 230 is formed by, for example, Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD), ultra-high frequency plasma-assisted chemical vapor deposition. Very High Frequency Plasma Enhanced Chemical
Vapor Deposition，VHF PECVD )、或者是微波電漿辅助化學氣 相沉積法（Microwave Plasma Enhanced Chemical VaporVapor Deposition, VHF PECVD), or Microwave Plasma Enhanced Chemical Vapor
Deposition, MW PECVD )。 繼之，如圖10E所示，圖案化光伏材料層M以形成 多個開口 H，其中多個開口 Η分別曝露多個第一光伏單元 202的第一導電層220。在本實施例中，形成多個開口 Η 15 201123474 q w -*. # ^»wWf.Q〇c/ci :湖如是採用雷射製程、_製程或是機械力移除製 再來’如圖10F所示，形成第_ 板210上，以覆蓋光伏材料純。^中 :屬有：：f 方法例如是使用上述繼、 金屬有機化學㈣目沈餘、絲 述之透明導電層材質，在此便不再贅述而/、材_如疋則 C2/^^ Γ所示，同日_化第二導電材料層 以形成各第—光伏單元202的光伏層 230，、第一導電層240，盆中各一笛, 導電層透過開口 Η=:的元2〇2的第二 導電層220電性連接/、相㈣卜先伏單元逝的第一 特別要制的是，在本實_巾，在進行上述圖· ===驟時，例如是使用雷射製程，刻製程 =枚=移除製程等方_第二光伏單元辦與第一光 隔Τ也就是說，本實施例是同時形成多 21〇上。早兀202以及一個第二光伏單元2〇4於基板 檢測各第-光伏單元2〇2所產生的光電流的大 二本貫施例中，檢測光電流大小的方式例如是照射一 線於各第—光伏單元2G2上，並藉由光電流檢測設 備以仏測之’此為舉例說明。在其他可能的實施例中，檢 別光书W的方式也可以是制本領域之通常知識者所能想 16 201123474 ii/20twf.doc/d 到的檢測方式，在此便不再贅述。 ，後，將第二光伏單元2。4電性連接於其中—個 ^伙早το 202，以使整體的第一光伏單元搬 =:其中撕接的實施方式如下列說明，但= ，11錢圖11B為本發明—實施例之第—光伏單元與 第一光伏單70電性連接的方法示意圖。 ' 先:η請參照圖UA，例如以—雷射銲接製程將第二 ^早兀204的第-導電層2施與上述光電流較小的第一 = ^ 202的第-導電層22()電性連接，如 =二。然後’請參照圖UB ’例如以一雷射銲: =將第二光料元2G4的第二導電層與 車^的第-光伏單元202的第二導電層_電性連接電二 驗:不崎接區域W2。至此，即完成上述® 3所示之 溥膜太陽能電池200的製作流程。 綜上舰，㈣树__續能電池具有第二光 ’因此當多個第—光伏單元所提供的光電流 、車It ’可猎由第二光伏單元與部分的第—光伏單元電性 =改善串接的光電流匹配。換言之，本發明的薄膜太 具有較佳的光電轉換效率。另外，本發明之薄 、咸電池的f造方法’由於可在不增加製造流程的情 ㈣?f上述的第二光伏單S，因此可透過較簡單的方式 P铑向溥膜太陽能電池的性能。 雖然本發明已以實施例揭露如上，然其並非用以限定 17 201123474 j i /zuiwf.doc/d 之==:領域中具有通常知識者，在不脫離 明、，軏圍内，▲可作許之更動與潤飾，故本發 乂…乾t現後附之申請專利範圍所界定者為準。 【圖式簡單說明】 — 二知—種薄膜太陽能電池的上視示意圖。 L t著圖1中Α·Α，線段的斷面示意圖。 圖施例之薄膜太陽能電池上視示意圖。 面示意圖τ ·之-6線所緣示之薄膜太陽能電池的斷 面示：為以所:r薄膜太陽能電池的斷 接。 弟先伙早几與第二光伏單元並未電性連 圖6為沿圖3之Γ Γ，姑&从_ 光伏單元電i f不之第—光伏單元與第二 圖7連接之—種實施方式的斷面示意圖。 圖8 ίΐΓ—實施例之薄膜太陽能電池上視示意圖。 圖=太陽能電池上視示意圖。 圖1〇Α至圖1Orm相太陽能電池上視示意圖。 池的製作流程圖。 —實施例之_太陽能電 第二與f⑽為本發明—實施例之第—光伏單元歲 先伏早7C電性連接的方法示意圖。 早几與 】8 201123474 3 i/20twf.doc/d 【主要元件符號說明】 100、200、300、400、500 :薄膜太陽能電池 102 :光伏單元 乂 110、210:基板 乂 120、220、220a :第一導電層 130、230、230a :光伏層 140、240、240a :第二導電層 202 :第一光伏單元 • 202a、202b:側邊 204、304a、304b、304c、404a、404b、404c、504a、 504b :第二光伏單元 B-B，、C-C，：線 Cl :第一導電材料層. C2 :第二導電材料層 Dl、D2 :延伸方向 Η :開口 鲁 L :光線 Μ:光伏材料層 Ρ卜 Ρ2、Ρ3、Ρ4、Ρ5、Ρ6 :光伏區 19Deposition, MW PECVD). Next, as shown in FIG. 10E, the photovoltaic material layer M is patterned to form a plurality of openings H, wherein the plurality of openings 曝 expose the first conductive layers 220 of the plurality of first photovoltaic cells 202, respectively. In this embodiment, a plurality of openings 形成 15 201123474 qw -*. # ^»wWf.Q〇c/ci : If the lake adopts a laser process, a process, or a mechanical force removal system, as shown in Fig. 10F As shown, the first plate 210 is formed to cover the photovoltaic material pure. ^中: The genus::f method is, for example, the material of the transparent conductive layer which is used in the above-mentioned metal organic chemistry (4), and is not described here, and the material _如疋 C2/^^ Γ As shown, the second conductive material layer is formed on the same day to form the photovoltaic layer 230 of each of the first photovoltaic units 202, the first conductive layer 240, and each of the flutes in the basin, and the conductive layer passes through the opening Η=: element 2〇2 The first conductive layer 220 is electrically connected to the second conductive layer 220, and the first phase of the phase (4) is first, in the case of the above-mentioned figure, ===, for example, using a laser process, Engraving process = piece = removal process and the like - the second photovoltaic unit and the first optical barrier, that is to say, this embodiment is formed at the same time 21 times. In the second embodiment of detecting the photocurrent generated by each of the first-photovoltaic cells 2〇2 on the substrate, the method of detecting the photocurrent is, for example, irradiating the first line in each of the first and second photovoltaic units 2〇4. - Photovoltaic unit 2G2, and by means of photocurrent detecting equipment to speculate 'this is an example. In other possible embodiments, the method of detecting the optical book W may also be a detection method that can be considered by those of ordinary skill in the art, and will not be described again here. After that, the second photovoltaic unit 2. 4 is electrically connected to the one of the first photovoltaic units to move the whole first photovoltaic unit =: the embodiment of the tearing is as follows, but =, 11 money FIG. 11B is a schematic diagram of a method for electrically connecting a photovoltaic unit to a first photovoltaic unit 70 according to a first embodiment of the present invention. 'First: η Referring to FIG. UA, for example, the first conductive layer 2 of the second early 204 is applied to the first conductive layer 22 of the first = ^ 202 with a smaller photocurrent by a laser soldering process. Electrical connection, such as = two. Then, please refer to FIG. UB for example, by a laser welding: = electrically connecting the second conductive layer of the second light element 2G4 with the second conductive layer of the first photovoltaic unit 202 of the vehicle ^: Sakisaki area W2. Thus, the production process of the enamel film solar cell 200 shown in the above paragraph 3 is completed. In summary, the (four) tree __ continuation battery has a second light 'so the photocurrent provided by multiple first-photovoltaic units, the vehicle It' can be hunted by the second photovoltaic unit and part of the first-photovoltaic unit = Improve the photocurrent matching of the series connection. In other words, the film of the present invention has too much photoelectric conversion efficiency. In addition, the method for manufacturing a thin and salty battery of the present invention can transmit the performance of the tantalum solar cell in a relatively simple manner because the second photovoltaic sheet S can be added without increasing the manufacturing process. . Although the present invention has been disclosed above by way of example, it is not intended to limit the number of people who have the usual knowledge in the field of the singularity of the singularity of the singularity of the singularity of the singularity of the syllabus. The change and retouching, so this hairpin ... dry t is attached to the scope of the patent application as defined. [Simple description of the diagram] - Two knowledge - a schematic view of a thin film solar cell. L t is a schematic cross-sectional view of the line segment in Fig. 1 . A schematic view of a thin film solar cell of the embodiment of the invention. The surface diagram of the thin film solar cell shown by the -6 line is shown as a disconnection of the thin film solar cell. The younger brothers and the second photovoltaic unit are not electrically connected. Figure 6 is the same as Figure 3, and the implementation of the photovoltaic unit is connected to the second Figure 7. A schematic cross-section of the method. Figure 8 is a top view of a thin film solar cell of an embodiment. Figure = schematic view of the solar cell. Figure 1 is a top view of the Orm phase solar cell of Figure 1. The flow chart of the pool. - Embodiments - Solar Power The second and f (10) are schematic diagrams of the method of the invention - the first embodiment of the photovoltaic unit.早早与】8 201123474 3 i/20twf.doc/d [Description of main components] 100, 200, 300, 400, 500: Thin film solar cells 102: Photovoltaic cells 乂110, 210: Substrate 乂120, 220, 220a: First conductive layer 130, 230, 230a: photovoltaic layer 140, 240, 240a: second conductive layer 202: first photovoltaic unit • 202a, 202b: side edges 204, 304a, 304b, 304c, 404a, 404b, 404c, 504a 504b: second photovoltaic unit BB, CC, line C: first conductive material layer. C2: second conductive material layer Dl, D2: extending direction Η: opening Lu L: light Μ: photovoltaic material layer Ρ Ρ 2 , Ρ3, Ρ4, Ρ5, Ρ6: Photovoltaic area 19