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TW201122128A - Evaporation source device (I) - Google Patents

Evaporation source device (I) Download PDF

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Publication number
TW201122128A
TW201122128A TW98146421A TW98146421A TW201122128A TW 201122128 A TW201122128 A TW 201122128A TW 98146421 A TW98146421 A TW 98146421A TW 98146421 A TW98146421 A TW 98146421A TW 201122128 A TW201122128 A TW 201122128A
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TW
Taiwan
Prior art keywords
nozzle
source device
evaporation source
crucible
evaporation
Prior art date
Application number
TW98146421A
Other languages
Chinese (zh)
Inventor
Shih-Wei Lee
Cheng-Hai Chiu
Wei-Min Huang
Ching-Ju Lin
Original Assignee
Axuntek Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Axuntek Solar Energy Co Ltd filed Critical Axuntek Solar Energy Co Ltd
Priority to TW98146421A priority Critical patent/TW201122128A/en
Publication of TW201122128A publication Critical patent/TW201122128A/en

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Abstract

The present invention provides an evaporation source device for enhancing the evaporation uniformity and the utility rate of the evaporation material when manufacturing the substrate with a large area. The dual source evaporation device of the present invention comprises a crucible for containing an evaporation material, wherein the molecules of the evaporation material are evaporated by heating the crucible; a nozzle cover disposed on the crucible and having a plural of nozzles connected with the crucible.

Description

201122128 六、發明說明: 【發明所屬之技術領域】 本發明係有關於一種線型之雙蒸發源裝置,尤指一種可在大面積 的基板製作時’提高鍍膜的均勻性及蒸鍵材料的利用率的掛鋼結構。 【先前技術】 蒸鑛製程(evaporationprocess)在半導體元件製作、液晶顯示器元件 φ 冑作或太陽能電池元件製作過程中受到了廣泛的使用,為了將製作過 程中所使用的蒸鑛材料均勻塗佈於基板,習知技術中是將基板設置於 掛鋼的開口上方,再藉由加熱醜使得放置於其内的驗材料蒸發, 通過開口而均勻地附著在於基板上,達成均勻塗佈的效果。 然當基板尺寸絲敎時,其所級賴的均自歧是極大的挑 戰,如何在大型基板上製作厚度均勻的高品質鍍膜,一直是當前蒸鑛 製程量產時所面臨最大的挑戰。 φ ^因應大面積量產的需求,大面積薄膜蒸鑛早期是從傳統的點蒸 發源為基礎來進行改良,所延伸出的改良有:改變點蒸發源氣體容器開 口的形狀、增加點蒸發源的數目、以及改變點蒸發賴排列方式等方 法。但這些改良應用在小面積及少量生產時,單點或多點蒸發源的蒸 鍍方式也許可提供較均勻的鑛膜,但其缺陷在於當擬進行大面積鑛膜 且須大量生產時,仍會遭遇城厚不均或級材料糊率低等種種限 制。 故為因應大面積舰與大量生產,在習知技術巾更進—步地將蒸 鍍源由點蒸發源改進為線蒸發源。線蒸發源是以掃描方式進行蒸錢, 3 201122128 但其膜厚均勻性仍不佳,且其蒸鍍材 線蒸發源適合大面積式的生產 料利用率仍偏低。 【發明内容】 ▲ ϋθ出的各種缺陷,為因應大面積且大量生產製程的需求, 本發月提出-種線型之蒸發源裝置,較佳地適用在大面積的基板製 作,能夠顯著的提高錢膜的均勻性及蒸鑛材料的利用率。 根據上it構想,本發出—種蒸發職置。賴發源裝置包含 掛鋼及噴嘴蓋體,具有—第―容置㈣及第二容置空間係容納不 同或相同之驗材料,藉由輻射加熱源加歸鋼使紐材料之分子蒸 發,掛鋼係配置成上謂σ之筒狀結構,筒狀結構為_、長方形或 方形。喷嘴蓋體係設置於_之上方,具有—斜孔噴嘴及一直孔喷嘴, 斜孔喷嘴及直孔喷嘴連接於該賴,喷嘴蓋體具有嵌合部,可供該掛 鋼-端筒織域合喷嘴魏,斜㈣嘴射嘴紐之巾心、線形成一 夾角。 【實施方式】 本發明之實施例的詳細描述如下,_,除了該詳細描述外,本 發明還可以廣泛地在其他的實施纖行。亦即,本發_範圍不受已 提出之實施例的限制’而應以本發明提出之”專利範圍為準。 再者,為提供更清楚的描述及更易理解本發明,圖示内各部份並 沒有依照其相對尺寸_,某些尺寸與_目關尺度械已經被誇 張;不相關之細節部份也未完全繪出,以求圖示之簡潔。 201122128 第—岐顯示本個之線雜發源裝置騎綱,第二圖是 ==發明第-實施例之線型蒸發源裝置的喷嘴蓋體剖面圖,而第三 林發明第—實施例之線賴發《置的與喷嘴蓋體結合 。本紐職置_㈣絲麟料的喊發方向, p發源裝置卿包含義職喷嘴蓋體2〇。請參閱第一圖,咖〇 ___ 6G,細域源域_ 1(M_材制之分 子蒸發K)係配置為上方開σ之筒狀結構,筒狀結構賴形、長 方形或方形。201122128 VI. Description of the Invention: [Technical Field] The present invention relates to a linear double evaporation source device, and more particularly to a method for improving the uniformity of a coating film and the utilization of a steamed key material in the production of a large-area substrate. Hanging steel structure. [Prior Art] The evaporation process has been widely used in semiconductor device fabrication, liquid crystal display device fabrication, or solar cell device fabrication, in order to uniformly apply the vaporized material used in the fabrication process to the substrate. In the prior art, the substrate is placed above the opening of the steel, and the test material placed therein is evaporated by heating, and uniformly adhered to the substrate through the opening to achieve uniform coating effect. However, when the size of the substrate is silky, the self-discrimination of the substrate is a great challenge. How to make a high-quality coating with uniform thickness on a large substrate has always been the biggest challenge in the current mass production of the steaming process. φ ^ In response to the demand for large-area mass production, large-area thin film steaming is improved from the traditional point evaporation source in the early stage. The improvements that have been extended include: changing the shape of the opening of the evaporation source gas container and increasing the point evaporation source. The number of the methods, as well as the method of changing the point of evaporation and evaporation. However, in these small-area and small-scale production, the evaporation method of single-point or multi-point evaporation source may provide a more uniform mineral film, but the defect is that when large-area mineral film is proposed and mass production is required, There will be various restrictions such as uneven urban thickness or low grade material paste rate. Therefore, in response to large-area ships and mass production, the conventional technical towel is further improved from a point evaporation source to a line evaporation source. The line evaporation source is steamed by scanning, 3 201122128, but its film thickness uniformity is still not good, and its evaporation line evaporation source is suitable for large-area production material utilization is still low. SUMMARY OF THE INVENTION ▲ Various defects of ϋθ are required for large-area and large-scale production processes. This month, a linear-type evaporation source device is proposed, which is preferably applied to large-area substrate production, which can significantly increase money. Uniformity of the membrane and utilization of the steamed material. According to the idea of the first, this issued a kind of evaporation position. The Lai Fayuan device consists of a hanging steel and a nozzle cover, and has a first-capacity (four) and a second accommodating space for accommodating different or the same test materials, and the radiant heat source is added to the steel to evaporate the molecules of the material, and the steel is hanged. It is configured as a cylindrical structure with σ, and the cylindrical structure is _, rectangular or square. The nozzle cover system is disposed above the _, and has an oblique hole nozzle and a straight hole nozzle. The oblique hole nozzle and the straight hole nozzle are connected to the lag, and the nozzle cover body has a fitting portion for the steel splicing end tube The nozzle Wei, the oblique (four) mouth nozzle, the heart of the towel, the line forms an angle. [Embodiment] The detailed description of the embodiments of the present invention is as follows, and the present invention can be widely implemented in other embodiments in addition to the detailed description. That is, the scope of the present invention is not limited by the embodiments that have been proposed, and the scope of the invention should be based on the present invention. Further, in order to provide a clearer description and to more easily understand the present invention, the various parts of the drawings The parts are not in accordance with their relative size _, some sizes and _ target scale tools have been exaggerated; the unrelated details are not completely drawn, in order to simplify the illustration. 201122128 The first line shows the line The second embodiment is a cross-sectional view of the nozzle cover of the linear evaporation source device of the invention, and the third embodiment of the invention is combined with the nozzle cover. The position of this New Zealand _ (four) the direction of the shredded material, p source device contains the mouth of the prosthetic nozzle 2 请. Please refer to the first picture, curry ___ 6G, fine domain source domain _ 1 (M_ material system The molecular evaporation K) is configured as a cylindrical structure with an upper opening σ, and the cylindrical structure is elongated, rectangular or square.

請參閱第二圖’喷嘴蓋體2〇係由本體2〇1、蓋唇2〇2、斜孔喷嘴 辦及直孔喷嘴204,所組成,本體201具有可以向下結合的蓋唇202, 盖唇2〇2下端喊之嵌槽加可供掛助上端筒壁嵌入結合喷嘴蓋體 20,斜孔喷嘴綱及直孔喷嘴分別連接於掛鋼1〇。如第二圖所示, 斜孔噴嘴2〇4可為可調節蒸鍍材料3〇喷出方向之任何構造,斜孔喷嘴 204與噴嘴蓋體2〇之中心線[形成一夾角_〜明度角,以所蒸錄薄 膜的均句性最佳即可蒸鍍之範圍最大做選擇,其較佳角度為5〜2〇度 角’亦或者更佳角度為8〜15度角。 請參閱第三圖,本發明之線型蒸發源裝置1〇〇可決定蒸鑛材料6〇 的蒸發方向,線型蒸發源裝置勘包含稿1〇及喷嘴蓋體2〇。其掛鋼 扣及喷嘴蓋體2〇之結合已分述於前’此;I;再贅述如,如此即形成線型 蒸發源裝置100。 本實施例中可包含複數個直孔喷嘴2〇4及複數個直孔喷嘴2〇4,, 如第二圖所示。該等直孔噴嘴2〇4,配設於噴嘴蓋體2〇之中心線L之另 —側,與喷嘴部2〇之中心線L相互平行’且該等斜孔喷嘴綱之轴線 201122128 與該等直孔喷嘴204’之軸線相交,形成一夾角θ’。 第四圖及第五圖是第三圖之Α-Α’線的剖面圖,顯示本發明第一實 施例之蒸發源裝置,喷嘴部2〇之外型可為圓形、長方形或方形,配合 坩鍋10之外型即可。上述噴嘴蓋體20之外型或坩鍋1〇之外型可根據 實際功能需求而作調整,並不限定於上述類型中。 本發明之雙蒸發源裝置100可決定蒸鍍材料6060,的蒸發方向,該 雙蒸發源裝置100包含坩鍋10及喷嘴蓋體2〇。請參閱第—圖, 請參閱第二圖,喷嘴蓋體2〇係由本體201、蓋唇2〇2、斜孔喷嘴 2〇4及直孔喷嘴2〇4,所組成,本體2〇1具有可以向下結合的蓋唇2〇2, 蓋唇2〇2下端凹設之嵌槽(或稱嵌合部)2〇3可供坩鍋1〇上端筒壁後入結 合喷嘴蓋體2〇,如第二圖所示,斜孔喷嘴2〇4可為可調節蒸鑛材料% 噴出方向之任何構造,斜孔喷嘴綱與喷嘴蓋體2〇之中心線L形成一 夾角Θ為3〜40度角,以所蒸鍍薄膜的均句性最佳即可蒸錄之範圍最大 做選擇’其較佳角度為5〜2G度角,亦或者更佳角度為㈠5度角。 第六圖是齡本發明第二實施例_之雙蒸發源裝噴嘴蓋體 剖面圖,而第七圖是顯示本發明第二實施例線型之雙蒸發源裝置的掛 銷與喷嘴蓋體結合之剖面圖。本發明第二實施例之線型蒸發源裝置娜 之掛鋼U)不同於第-實施例,物Q具有—第—容置蝴〇及第二 ^空間職容納不同或相同之蒸_零,藉由輻射加熱源加 二掛銷材料6_,之分子蒸發,義_配置為上方開口之 :狀結構’練結構顧形、長方形或杨喷嘴蓋體耗由本體仙、 且I、複數個斜孔喷嘴彻及複數個直孔嗔嘴撕,所組成。本體他 可以向下結合的蓋唇4〇2,蓋唇4〇2下端外側配設階梯狀之套接段 201122128 (或稱嵌合部)403 ’可供坩鍋10上端筒壁套接結合喷嘴蓋體4〇,斜孔噴 嘴404連接於坩鍋1〇之第一容置空間3〇,直孔噴嘴4〇4,連接於坩鍋扣 之第二容置空間3〇,,以形成線型雙蒸發源裝置1〇〇。 第八圖是顯示本發明第三實施例之線型蒸發源裝置的喷嘴蓋體剖 面圖,而第九®是顯示本發明第三實施例之線型蒸發源裝置的堆鋼與 喷嘴蓋體結合之剖面圖。本發㈣三實施例之線型蒸發源裝置鳩之掛 鍋10與第一或第二實施例相同,喷嘴蓋體50係由本體501、蓋唇5〇2、 複數個斜孔噴嘴5〇4及複數個直孔喷嘴财所組成,本體5〇1具有可以 向下結合的蓋唇5〇2’蓋唇5〇2下端内側配設階梯狀之套接段(或稱嵌合 部)503,可供坩鍋10上端筒壁套接結合喷嘴蓋體5〇 ’以形成線型雙蒸 發源裝置100。 本發明以較佳之實施例說明如上,僅用於藉以幫助了解本發明之 實施’非㈣限定本發明之精神’而熟悉此賴技藝者於領悟本發明 之精神後’林脫縣發明之精神範_,#可作些許更細飾及等 同之變化替換’其專娜護細#視後附之巾請專職圍及其等同領 域而定。 【圖式簡單說明】 第-圖是顯示本發明之蒸發源裝置的购剖面圖; 第二圖是顯示本發明第—實施例之線型蒸發源裝置的喷嘴蓋體剖面 圖; 第三圖是顯林發明第—實_之_蒸發置的賴與喷嘴蓋體 結合之剖面圖; 第四圖是顯示第三圖之A_A,線的剖面圖; 201122128 第五圖是顯示第三圖之A-A’線的剖面圖; 第六圖是顯示本發明第二實施例之雙蒸發源裝置的喷嘴部剖面圖; 第七圖是顯示本發明第二實施例之雙蒸發源裝置的坩鍋與喷嘴蓋體結 合之剖面圖; 第八圖是顯示本發明第三實施例之線型雙蒸發源裝置的喷嘴蓋體剖面 圖;及 第九圖是顯示本發明第三實施例之線型雙蒸發源裝置的坩鍋與喷嘴蓋 體結合之剖面圖; 【主要元件符號說明】 10 :坩鍋 20、40、50 :喷嘴蓋體 30、30’ :容置空間 60 :蒸鑛材料 100 :線型蒸發源裝置 201、 401、501:本體 202、 402、502 :蓋唇 203 :嵌槽 204、404、504 :斜孔喷嘴 204’、404’、504’ :直孔喷嘴 403、503 :套接段Referring to the second figure, the nozzle cover 2 is composed of a body 2〇1, a cover lip 2〇2, an inclined hole nozzle, and a straight hole nozzle 204. The body 201 has a cover lip 202 that can be coupled downward. The lower end of the lip 2〇2 is called the slot and the upper end of the tube is embedded in the nozzle cover body 20, and the oblique hole nozzle and the straight hole nozzle are respectively connected to the hanging steel 1〇. As shown in the second figure, the inclined hole nozzle 2〇4 can be any structure that can adjust the discharge direction of the vapor deposition material 3〇, and the oblique hole nozzle 204 and the center line of the nozzle cover 2〇 form an angle _~brightness angle The optimum range of vapor deposition of the vaporized film can be selected as the largest range, and the preferred angle is 5 to 2 degree angle 'or better angle or 8 to 15 degree angle. Referring to the third figure, the linear evaporation source device 1 of the present invention can determine the evaporation direction of the distilled metal material 6〇, and the linear evaporation source device includes the draft 1〇 and the nozzle cover 2〇. The combination of the steel buckle and the nozzle cover 2 has been described in the foregoing; I; and, for example, the linear evaporation source device 100 is formed. In this embodiment, a plurality of straight hole nozzles 2〇4 and a plurality of straight hole nozzles 2〇4 may be included, as shown in the second figure. The straight hole nozzles 2〇4 are disposed on the other side of the center line L of the nozzle cover 2〇, and are parallel to the center line L of the nozzle unit 2〇 and the axes of the inclined hole nozzles are 201122128 and The axes of the straight bore nozzles 204' intersect to form an included angle θ'. The fourth and fifth figures are cross-sectional views of the 图-Α' line of the third figure, showing the evaporation source device of the first embodiment of the present invention, and the nozzle portion 2 can be round, rectangular or square in shape. Shabu-shabu 10 can be used. The outer shape of the nozzle cover 20 or the shape of the crucible may be adjusted according to actual functional requirements, and is not limited to the above type. The double evaporation source device 100 of the present invention determines the evaporation direction of the vapor deposition material 6060, which includes the crucible 10 and the nozzle cover 2''. Please refer to the second figure. Referring to the second figure, the nozzle cover body 2 is composed of a body 201, a cover lip 2〇2, an inclined hole nozzle 2〇4, and a straight hole nozzle 2〇4, and the body 2〇1 has The cover lip 2〇2 which can be combined downward, and the recessed groove (or fitting portion) 2〇3 which is recessed at the lower end of the cover lip 2〇2 can be used for the upper end of the crucible 1〇 and the nozzle cover body 2〇, As shown in the second figure, the inclined hole nozzle 2〇4 can be any structure that can adjust the direction in which the steaming material is discharged. The oblique hole nozzle is formed at an angle 3 of 3 to 40 degrees with the center line L of the nozzle cover 2〇. The angle, the best uniformity of the vapor-deposited film can be selected as the largest range of steaming. The preferred angle is 5 to 2G degrees, or the angle is (1) 5 degrees. 6 is a cross-sectional view of a double evaporating source nozzle cap according to a second embodiment of the present invention, and the seventh drawing is a combination of a pin of a double evaporation source device of the second embodiment of the present invention and a nozzle cover. Sectional view. The linear evaporation source device of the second embodiment of the present invention is different from the first embodiment. The object Q has a first-capacity butterfly and a second space to accommodate different or the same steam_zero. The radiant heating source is added with two hanging pin materials 6_, and the molecules are evaporated, and the _ _ is configured as the upper opening: the structure of the structure, the structure of the shape, the rectangular or the Yang nozzle cover body is consumed by the body, and I, a plurality of inclined hole nozzles It consists of a number of straight holes and tears. The body can be combined with the cover lip 4〇2, and the outer side of the lower end of the cover lip 4〇2 is provided with a stepped sleeve portion 201122128 (or a fitting portion) 403 ′ for the upper end of the crucible 10 to be sleeved and coupled with the nozzle The cover body 4 is connected to the first accommodating space 3〇 of the crucible 1〇, and the straight hole nozzle 4〇4 is connected to the second accommodating space 3〇 of the crucible buckle to form a linear double Evaporation source device 1〇〇. 8 is a cross-sectional view showing a nozzle cover of a linear evaporation source device according to a third embodiment of the present invention, and ninth is a cross section showing a combination of a stack of steel and a nozzle cover of the linear evaporation source device of the third embodiment of the present invention. Figure. The wire-type evaporation source device of the present invention (4) is the same as the first or second embodiment, and the nozzle cover 50 is composed of a body 501, a cover lip 5〇2, a plurality of inclined hole nozzles 5〇4, and The plurality of straight-hole nozzles are composed of a plurality of straight-hole nozzles, and the body 5〇1 has a cover lip 5〇2', and a stepped sleeve portion (or a fitting portion) 503 is disposed on the inner side of the lower end of the cover lip 5〇2. The upper end of the crucible 10 is sleeved in conjunction with the nozzle cover 5' to form a linear dual evaporation source device 100. The present invention has been described above in terms of preferred embodiments, and is only used to help understand the implementation of the present invention 'not (four) to limit the spirit of the present invention' and is familiar with the spirit of the present invention after the spirit of the invention is understood. _, # can be made a little more fine and the equivalent of the change to replace the 'the special care of the fine # # attached to the towel, please refer to the full-time and its equivalent fields. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a cross-sectional view showing the evaporation source device of the present invention; the second drawing is a sectional view showing the nozzle cover of the linear evaporation source device of the first embodiment of the present invention; The invention is the cross-sectional view of the combination of the evaporation and the nozzle cover; the fourth diagram is the A_A of the third diagram, the cross-sectional view of the line; 201122128 The fifth figure shows the A-A of the third figure 'Sectional view of the line; FIG. 6 is a cross-sectional view showing the nozzle portion of the dual evaporation source device of the second embodiment of the present invention; and FIG. 7 is a crucible and nozzle cover showing the double evaporation source device of the second embodiment of the present invention FIG. 8 is a cross-sectional view showing a nozzle cover of a linear double evaporation source device according to a third embodiment of the present invention; and FIG. 9 is a view showing a linear double evaporation source device according to a third embodiment of the present invention. Cross-sectional view of the combination of the pot and the nozzle cover; [Description of main components] 10: crucible 20, 40, 50: nozzle cover 30, 30': accommodation space 60: steamed material 100: linear evaporation source device 201, 401, 501: body 202, 402, 502: cover lip 203 : grooves 204, 404, 504: inclined hole nozzles 204', 404', 504': straight hole nozzles 403, 503: sleeve segments

Claims (1)

201122128 七、申請專利範圍: 1. 一種蒸發源裝置,其包含: 一坩鍋,其中容納有一蒸鍍材料;以及 一喷嘴蓋體,係卡固於該坩鍋之開口處,具有一斜孔嘴嘴以及一直 孔噴嘴,該斜孔喷嘴及該直孔喷嘴分別連接於該坩鍋。 2. 如申請專·圍第1賴述之紐職置,其巾該_係為—筒狀結 構。 3 3·如申凊專概圍第2項所述之蒸發源裝置,其巾該筒狀結構為圓形或 方形。 — 4. 如申凊專利範圍第1項所述之蒸發源裝置,其中該噴嘴蓋體具有一爭 槽。 5. 如申請專鄕圍第4顧述之蒸發源裝置,其中該職之該開口處之 筒壁可嵌合入該嵌槽。 6. 如申請專利範圍第1項所述之蒸發源裝置,其中該斜孔噴嘴之中心線 與該噴嘴蓋體之中心線之間具有一夾角。 7. 如申請專利範圍第6項所述之蒸發源農置,其中該夾角為3〜4〇度角。 8. 如申請專利範圍第6項所述之蒸發源裝置,其中該炎角為5〜2〇度角。 9. 如申請專利範圍第6項所述之蒸發源裝置,其中該夾角為8〜15度角。 10. 如申請專利範圍第〗項所述之蒸發源裝置,其中該直孔喷嘴之中心 線平行於該噴嘴蓋體之中心線。 11如申請專利範圍第1項所述之蒸發源裝置,其中該斜孔喷嘴之軸線 與該直孔喷嘴之轴線相交。 12.—種蒸發源裝置,其包含: 一坩鍋,具有一第一容置空間及第二容置空間;以及 一噴嘴蓋體,係設置於該坩鍋之開口處,具有複數個斜孔噴嘴及複 數個直孔喷嘴,該等斜孔噴嘴及該等直斜孔喷嘴分別連接於該—第一 201122128 容置空間及該第二容置空間。 邮申請翻細第12_叙蒸發 其找 及Z二容置空間分別容納有第一蒸發材料及第二蒸發材料广置工間 从如申請專利範圍第12項戶 結構,麟嶋_物彡,細_為—筒狀 15.—種蒸發源裝置,其包含·· 一坩鍋’具有—第一容 一喷嘴蓋體,且有一私間及第二容置空間;以及 之一開巧_接,噴嘴缝經由紐合《與該掛鋼 喷嘴。 x冑讀並具有魏個斜孔倾及複數個直孔 16.如申請專利範圍第 階梯狀之套接段。 Π.如申請專利範圍第 凹設之嵌槽。 15項所述之綠源裝置,射Μ合部更包含-項所述之;級源裝置,其巾該嵌合部更包含—201122128 VII. Patent application scope: 1. An evaporation source device, comprising: a crucible containing an evaporation material; and a nozzle cover fixed to the opening of the crucible, having an inclined mouth a nozzle and a straight hole nozzle, the oblique hole nozzle and the straight hole nozzle are respectively connected to the crucible. 2. If you apply for the New Zealand position of the first and the second, the towel is a cylindrical structure. 3 3. The evaporation source device according to item 2 of the application specification, wherein the cylindrical structure is circular or square. 4. The evaporation source device of claim 1, wherein the nozzle cover has a spur. 5. If the application is directed to the evaporation source device of the fourth aspect, the wall of the opening at which the position is fitted may fit into the groove. 6. The evaporation source device according to claim 1, wherein an angle between a center line of the oblique hole nozzle and a center line of the nozzle cover body is provided. 7. The method of claim 5, wherein the angle is 3 to 4 degrees. 8. The evaporation source device of claim 6, wherein the inflammatory angle is 5 to 2 degrees. 9. The evaporation source device of claim 6, wherein the angle is an angle of 8 to 15 degrees. 10. The evaporation source device of claim 1, wherein the centerline of the straight nozzle is parallel to a centerline of the nozzle cover. The evaporation source device of claim 1, wherein the axis of the oblique hole nozzle intersects the axis of the straight hole nozzle. 12. An evaporation source device, comprising: a crucible having a first accommodating space and a second accommodating space; and a nozzle cover disposed at an opening of the crucible having a plurality of slanted holes The nozzle and the plurality of straight hole nozzles are respectively connected to the first 201122128 accommodating space and the second accommodating space. Post application for refining 12_ 〗 Evaporation and Z 2 accommodating space respectively accommodate the first evaporating material and the second evaporating material arranging the work space from the 12th item of the patent application scope, Lin Yi _ material,细_为—Cylinder--a kind of evaporation source device, comprising: a crucible having a first one-nozzle nozzle body, and having a private and second accommodating space; The nozzle is stitched through the button "with the hanging steel nozzle. x 胄 read and have a slanted hole and a plurality of straight holes. Π If you apply for a patented range, the recessed groove. In the green source device of item 15, the merging and merging portion further comprises the item described in the item; the source device of the stage, the fitting portion of the towel further comprises -
TW98146421A 2009-12-31 2009-12-31 Evaporation source device (I) TW201122128A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018114379A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Roll-to roll vapor deposition system
WO2018114377A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Linear vapor source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018114379A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Roll-to roll vapor deposition system
WO2018114377A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Linear vapor source

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