TW201122124A - Method and apparatus for forming thin film - Google Patents

Abstract

A method for forming an (001) orientated MgO film on an amorphous magnetic film by rare gas sputtering of a target which has a surface made of MgO in a vacuum chamber, wherein the amorphous magnetic film makes a surface of a substrate which is accommodated in the vacuum chamber. The method includes: depositing a lower layered MgO film under a first pressure range that the amorphous magnetic film to which a particle released from the target shoots retains amorphism; and depositing an upper layered MgO film under a second pressure range that the amorphous magnetic film to which a particle released from the target shoots does not retain amorphism.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a thin film by using a sputtering method, and more particularly to forming an amorphous magnetic film using a target having magnesium oxide on its surface. A method of forming a film of a magnesium oxide film and a film forming apparatus therefor. [Prior Art] A tunnel insulating film composed of magnesium oxide (MgO) is one of techniques for realizing high output of a transversal magnetoresistive element. Among them, a film forming method of forming an extremely thin insulating film for exhibiting a tunneling effect by using Mg , is widely used by vapor-depositing a dry material having MgO on the surface, and depositing particles released from the light material on the substrate. Sputtering of the main surface (for example, Patent Document 丨). In order to make the wear resistance component exhibit a high rate (magnetQi>esist_ ratl0), the above is called a hetero-membrane, and (10) is required to be aligned as the crystal alignment of the MgO film. Further, in order to impart the (10)) alignment to the MgQ film by the above-described deplating method, the following conditions are required: [a] the magnetic film as the MgO film substrate is amorphous; and the MgO particles reaching the amorphous magnetic film are useful. The energy of the (10) plane can be used for polycrystallization on the amorphous magnetic film. In order to preferentially align in the polycrystallization (Patent Document 1) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. The particle, in the dry material from the dry material, is the energy age of the particle itself. Therefore, the energy that reaches the amorphous magnetic a species is lower in the number of people who are in flight and the rest of the opponents (that is, the average number of trials). In contrast, the average number of collisions of the particles is less. The higher. On the other hand, in general, the release angle of each of the remaining pieces from the dry material is a predetermined range relative to the direction of the release of the silk, which affects its distribution. Shame, the flying distance of the wire and the various particles deposited on the base surface, also varies depending on the angle at which the particles are released. Therefore, the surface of the dry material and the surface of the substrate are measured in a scale, or the surface of the girl is tilted relative to the surface of the substrate to form a film of the thief. The various particles that reach the number of collisions are deposited on the entire filament of the amorphous magnetic film. Therefore, in the ruthenium plating technique in which the MgQ film is formed, the average number of collisions of the particles reaching the surface of the substrate is satisfied on the surface under the above condition [b] for the amorphous magnetic film as a whole. The sputtering process is performed on the basis of a low pressure of 10 mPa to 2 〇 mPa as a whole in a predetermined number of times. However, if the sputtering treatment is performed at a low pressure as described above, the particles having excessive high energy are naturally brought to the amorphous magnetic film; therefore, the portion of the amorphous magnetic film hit by such particles is excessively supplied. energy. As a result, the amorphous property of the impurity film of the MgO film substrate disappeared as 201122124, so that the crystallinity of the substrate reacted to the MgQ film deposited thereon, and the (001) alignment required for the film was realized. That is, if the 1' anti-Sakisaki side of the base surface of the 7-foot upper secret part [b] is raised in order to increase the (10)] alignment of the ton film, the above condition can not be satisfied [a] And the loss of the Mg ruthenium film ((4) Alignment S. The shovel treatment to increase the (001) alignment of the ton film by the above-mentioned low pressure reference has its limitations. The object of the present invention is to provide a method for forming a __(10)) alignment formed by a surface method (a technical means for solving the problem). The method is for forming a (10)) oxidative oxidation method on an amorphous magnetic film, the method comprising: accommodating a substrate having a surface formed by the amorphous f magnetic film, _rare gas, The surface having the surface formed by the magnesium oxide is pre-plated to the above-mentioned non-sand-shaped top-shaped Wei-dip film. The step of forming an oxygen tilting film on the upper crystalline magnetic film includes: forming a lower magnesium oxide film from the upper recording material = particle riding surface The shots of the people are not expected to be miscellaneous, and the granules of the granules 9 or the lower layer of the above-mentioned oxidized _ upper layer of the oxide layer. Other ___ wires of the present invention. Forming (10) of the aligned magnesium oxide film on the Wei-based film, which has: 201122124 ^+_The surface formed by the upper _f magnetic ride has a miscellaneous gas; dry material, The dry material formed by the oxidized lock is supplied by the high-frequency electric power to thin the above-mentioned scaly gas, and the meat f is splashed; and the hard-working part is covered with the above-mentioned straight empty groove: The above-mentioned amorphous magnetic property of the particle rider who is released from the top == remains amorphous. The position of the above-mentioned vacuum tank is adjusted to be clear from the above-mentioned [Embodiment] The present invention will be described with reference to Figs. 1 to 8 . First, the thin crucible forming apparatus of the present invention will be described. As shown in the figure, the vacuum chamber u of the film forming apparatus 10 is connected to the inner space of the ribbed vacuum chamber, and is composed of a low temperature material, and the exhaust device 12 and the true fault 11 The pressure detecting device VG is connected between the internal pressure for detecting the true ball u. When the exhaust device 12 performs the exhausting operation, the inside of the vacuum chamber 11 is depressurized, and the internal pressure is detected by the pressure detecting means π. The vacuum mi is connected to the gas supply device 13, and the basin system is composed of a mass flow (4) flQw coffee (4) for a predetermined flow rate; and the 'lin system is a rare gas & (Ar), gas (5) Or 氪 (KO. In addition, in the state where the exhaust device 12 is subjected to the exhaust treatment, the gas supply device 13 supplies the rare gas to the inside of the vacuum chamber n, the internal pressure of the vacuum chamber 11 corresponds to the The flow rate of the internal lean gas 201122124 is changed. That is, the pressure adjusting portion of the vacuum chamber 11 is constituted by the exhaust device 12 and the gas supply device 13; the rare supply according to the gas supply 13 The flow rate of the gas can adjust the internal pressure of the vacuum chamber 11. The bottom of the internal space of the vacuum chamber 11 is provided in the form of a power output shaft coupled to the substrate rotating device 15 to support the substrate of the disk-shaped substrate S. I4. The substrate s supported by the substrate holder M is a disk-shaped substrate having an amorphous magnetic film as a base of the Mg ruthenium film, such as an amorphous element (C〇FeB) on the surface, for example, New Zealand. 8 Yingnu Si Jing K, A1Tic a circular substrate, a glass wafer, etc. Further, the substrate rotating device 15 is such that the substrate holder 14 causes the substrate holder 14 to have the temperature of the substrate S at room temperature; and the same-plate rotating device 15 is in the normal to the substrate S. The substrate s is rotated in the circumferential direction of the substrate s by the substrate rotation axis As at the center of the substrate s. In the substrate holder 14 formed in such a configuration, the surface is moved toward the surface of the substrate § from one direction. The sputtered particles are uniformly dispersed along the entire solid substrate of the silk plate 8 and the uniformity of the film thickness accumulated by the deposit on the amorphous magnetic film is increased. The top of the vacuum chamber 11 is provided with (d) generating a cathode 18 of electrohydraulic inside the vacuum chamber n. The backing plate 19 of the cathode 18 is electrically connected to, for example, a high-frequency power source that supplies high-frequency power of =56 给 to the cathode 18. The near substrate of the backing plate 19 The side of S is electrically connected to the inner hollow _ disk-shaped dry material τ which is the main component of the material surface Ta and is exposed to the vacuum chamber u. The Mg (10) material τ is the thin Ta-type silk money transfer line As separated, and in the form of a vacuum chamber relative to the surface of the substrate S 201122124 11. In more detail, the surface of the material surface Ta with respect to the substrate s is obliquely incident at an angle corresponding to the target normal line At of the target normal to the target surface Ta and the substrate rotation axis As of the substrate s. The angle (9 is inclined. Further, the Mg0 target τ is loaded in the vacuum chamber ^ in the form of the shortest flying distance dts, 2 〇〇 mm, in the form of the distance between the center of the dry material surface Ta and the surface of the substrate S.

The opposite side of the MgO dry material is sandwiched by the back plate 9 and is provided with a magnetic circuit 21; the magnetic circuit 21 is driven in a state where high-frequency power from the high-frequency power source GE is supplied to the back plate 19, and Thereby, a magnetron magnetic field is formed on the target surface Ta of the Mg 〇 target τ. In addition, a high-density plasma is formed in the vicinity of the surface Ta of the dry material of the Mg 〇 material τ, thereby making the surface of the dry material of the Mg 〇 target butyl having a cathode of a gas of a rare gas. Ta splash clock.

The position between the MgO target T and the substrate S is disposed directly above the substrate holder 14 so as to be coupled to the output shaft of the shutter rotating device 23, and the dome-shaped shutter 22 covering the upper surface of the substrate s is disposed. One of the shutters 22 is provided with an opening 22h. The opening 22H is a through hole through which the surface of the dry material of the Mg0 target τ can be substantially entirely exposed toward the substrate s. The rotation of the 23 thin substrate rotation axis A is centered to rotate the shutter 22. At this time, in the case where the high-frequency power is supplied to the back plate 19, the pure surface of the Mg eucalyptus τ faces the opening 22H, and the Mg 〇 target τ can be sputtered. Further, in the case where the high-frequency power is not supplied to the backing plate 19, the surface η of the dry material of the Mg dry material is sucked by the push gate 22, and the mismatch to the target T cannot be performed, and the surface of the target is suppressed. 3 pollution. 201122124 The film forming apparatus 10 includes a control device 30 that combines exhaust gas treatment by the exhaust device 12, gas gasification processing by the gas supply device I3, and power supply processing by the high-frequency power source GE. And so on. The control device 3 () is connected to the exhaust device I, and the exhaust device 2 is driven to cause the exhaust device 12 to start the exhaust gas treatment start control signal or to exhaust the exhaust device i 12 The end of processing is reduced. Further, the control unit 30 is connected to the pressure detecting device vg and the gas supply unit U' to align the detection signal from the pressure detecting device VG, and the hearing supply device U outputs the internal pressure of the vacuum chamber u to be predetermined. The pressure flow control and control device 30 is connected to the above-mentioned substrate rotating device 15, and the substrate is suspected to be turned on and off. (4) The wire thief turning device is turned on and the pure rotation process is started to control the A rib to make the substrate whirl. The control device 30 is connected to the door rotation device 23, and the control device 30 is connected to the door rotation device 23, and the ribs of the door suspicion device 23 are rotated to rotate the π 22H and the MgQ T to control the ship number. In addition, the control 3 3 is connected to the above-mentioned high-frequency power supply to the two-cycle power supply GE to supply the high-frequency power supply signal to the MgO material T or to stop the power supply to the Mg 〇 target τ. Stop the signal. Fig. 2 is a timing chart showing the operation of the same-wavelength power source GE, the gas supply device 13, and the pressure detecting device VG when the film forming apparatus 10 performs the film forming process. As shown in Fig. 2, when the film forming process is performed by the above When the formation of the formed film stack 7 into the apparatus 1G is started, the control device 3Q first decompresses the internal pressure of the vacuum chamber n to the reference pressure p〇 by the exhaust device 12, and then transports it by a substrate (not shown). The device moves the substrate S into the inside of the vacuum chamber 11. 201122124 Then, when the substrate 14 having the amorphous magnetic film on the surface, the control woven 3__ relays the second surface of the viewing surface Ta, and rotates with the substrate Second, the rotation of the board 疋 rotation axis As as the rotation center of the substrate s. If the rotation of the substrate S is started, the control of the sag 13 and the supply of the high pressure setting flow are thin, which will be true: : ^ Fort force is adjusted to high film forming pressure P2, that is, the first - pressure region. 曰 二 ^ Timing U 'then the control device 3 〇 high-frequency power supply GE and high cycle = power supply to _ m T, record The surface of the material Ta is _. Also ^ in the curry offer U) towel For the amorphous magnetic field on the surface of the substrate s, the MgO film is first formed on the basis of the high film formation Pli P2. Then, the Mg film formed by the ancient, = force P2 _ reaches the established "= atomic layer ~ The time series β of the thickness of the 4 atomic layer is controlled by the county for 13 and the supply of the set flow (4) of the rare gas ^ =: inner: wide and low film forming pressure. ι, that is, the second plant domain is always the same, in the thin film forming apparatus 1〇t, the crystalline magnetic film is high, the thickness of the atomic layer is 2; the thickness of the atomic layer of the 3 atomic layer, in the time series After the formation of the lower layer Mg0 film and the upper layer Mg 〇 ,, the surface Ta of the target is continuously sputtered. Here, as described above, in order to align the _ and give (10), the following conditions are required: the magnetic film as the base of the Mg ruthenium film 12 201122124 is amorphous; the amorphous magnetic property is reached. The Mg 〇 particles of the film are useful for energy for polycrystallization on the amorphous magnetic film and energy for preferentially aligning the (001) plane in polycrystallization. From this point of view, the pressure value (hereinafter referred to as the boundary pressure Pth) which is the boundary between the high film formation pressure P2 and the low film formation pressure P1 is set to various particles released from the Mg target τ (Mg). The particles, the ruthenium particles, and the like are incident on the amorphous magnetic film, and the amorphous magnetic film can maintain the minimum film formation pressure of the amorphous property. In the initial stage of forming the MgO film, the thin film forming apparatus 10 first deposits particles on the amorphous magnetic film under the reference of the film forming pressure of the boundary pressure 匕, and then is not full. The boundary pressure Pth is based on the benchmark of the force. Therefore, the initial film of the MgO film is formed under the condition of maintaining the amorphous state of the amorphous magnetic film, and thereafter, the MgO film exhibiting high energy of the alignment is deposited on the initial film. On the amorphous magnetic film in the state of Lai. As a result, the high-incidence energy of the particles that are subsequently injected is more likely to be absorbed by the amorphous magnetic film than the accumulation of the particles which are earlier reached by the hybrids, so that the crystallization of the amorphous f-type film can be suppressed. Further, the (10)) alignment of the MgO film can be improved by the effect of the P effect on the amorphous f-lining and the high energy of the subsequent particles. / Kind of boundary pressure Pth, can be, for example, the versatile force value of the immortal (the basis of the film formation pressure j in the amorphous magnetic, the formation of MgO film on the thief, and then for each = the force value system - Mg (10) (10)) _ X shots the peaks and pre-measured. In addition, it is also possible to form a MgO film on an amorphous magnetic film under the basis of a plurality of different dust force values (for a film-forming factory), and then for each multi-value "10"; The X-rays of the crystallinity of the magnetic film are measured in advance by the radiation peak of the 13 201122124. In addition, it is also possible to use the size of the X-rays for the formation of the amorphous magnetic film. The amount of energy of various particles on the amorphous magnetic film is preliminarily estimated. (Test Example) The boundary pressure pth for the formation of the film 10 and the optimum film for the MgQ under the boundary of the boundary pressure pth The thickness will be described in detail in the following test examples. First, the boundary pressure Pth of the thief-forming device 10 will be described in References 3 to 5. First, the film formation conditions described below are used to rotate the substrate s, and the film formation conditions are different. The pressure forms the rural MgO age as a test example. Through the X-ray diffraction method, the intensity and half bandwidth of the peak (20=42.9°) of the Mg〇(2〇〇) aligned (〇〇1) are shown for each test example. Figure 3 shows the peak intensity of Mg〇(200) for each test case (for film formation pressure). Unit: cps, c〇untsper second), the relationship between the diameter of the substrate s and the center of the substrate s (unit: mm). Fig. 4 shows the Mg 〇 for each test case (for film formation pressure). 200) A half-band bandwidth (unit: deg., degree), a graph showing the relationship between the distance from the center of the substrate s in the direction in which the substrate s is directly controlled. Further, FIGS. 5(a) and (b) illustrate the rotation of the substrate s. In the in-plane distribution of the MgO (200) peak intensity in the MgO film when the MgO film is formed under the same film formation conditions as described below. In Fig. 5, each contour line Lar is connected to the MgO (200) peak intensity. Figure 5 (a) illustrates the intensity distribution of a VIgO film formed by a lower film forming pressure (here, 10 mPa and 19 mPa). Figure 5 (b) is exemplified by The intensity distribution of the MgO film formed by the higher film forming pressure (here, 33 mPa and 82 mPa and 157 mPa); in the region where the peak intensity is lower, the thicker the point is. (film formation conditions). Substrate S. Fragmented substrate (substrate. 8 central p inch). Target: MgO target (diameter: 5 inches). Amorphous Magnetic film: (CoFe) 0.8B0.2 • Substrate temperature: room temperature. Shortest flight distance dts: 200 mm. Film formation pressure: 10 mPa, 19 mPa, 33 mPa, 82 mPa, 157 mPa. Sputtering gas: Ar. MgO film thickness: 20 nm. As shown in FIG. 3, when a Mg ruthenium film is formed in a state where the substrate S is rotated, it is observed that the closer to the periphery of the substrate S from the center portion of the substrate S is observed in the MgO film. The lower the intensity of the MgO (200) peak is. Further, the higher the film formation pressure, the lower the intensity of the MgO (200) peak itself, but the above tendency can be observed even in the range of substantially the entire pressure. Further, as shown in FIG. 4, a MgO film is formed in a state where the substrate s is rotated; in the case where such a Mg film can be observed from the center portion of the substrate s to the periphery of the substrate s, Mg(200) The wider the bandwidth of the half of the peak. Further, the higher the axial fine pressure, the wider the half-band width of the Mg0(10)) peak, but the above tendency can be made in the range of substantially the entire pressure. In the above-described film forming apparatus 10, when the MgO film is formed in a state where the film formation pressure is fixed, in the MgO film, the (10)d alignment of the outer peripheral portion of the substrate can be observed to be low over the entire region, and The (001) alignment of the central portion of the substrate S tends to be high. On the other hand, as shown in FIG. 5, if the substrate s is stopped, 15 201122124 (that is, in a state where the relative position of the surface of the substrate s and the surface of the dry material Ta is fixed), Mgcm 'observation is observed (QQ1). The intensity distribution of the alignment is in a form corresponding to the relative distance between the surface of the substrate S and the surface of the target. In other words, the in-plane distribution of the (001) alignment appears to be equal in the intensity of the MgO (200) peak at a position equal to the distance from the edge of the Mg 〇 target τ. Furthermore, in the region divided by the respective contour lines Lar: in the first region zi, the second region Z2, the third region Z3, and the fourth region Z4, it is observed that the intensity of the (001) alignment corresponds to the film formation pressure. The tendency. That is, as shown in Fig. 5 (a), at a lower film forming pressure of 10 rnPa and 19 mpa, the intensity of the first region Z1 (the intensity of the fourth region Z4 < the intensity of the second region Z2 < The intensity relationship of the strength of the third region Z3; and as shown in Fig. 5(b), at the higher film forming pressures of 33 mPa, 82 mPa, and 157 mPa, the intensity of the fourth region Z4 (the intensity of the third region Z3) is observed. <Intensity of the first region Z1 <Strength relationship of the intensity of the second region Z2. Further, the first region Z1 and the fourth region Z4 in which the intensity of the alignment is relatively low are both the outer peripheral portions of the substrate S. Therefore, this tendency also supports the in-plane distribution of the (001) alignment of the MgO film formed in the state in which the substrate S is rotated, that is, the (〇〇1) alignment of the outer peripheral portion of the substrate S is larger than the central portion of the substrate S. (001) The distribution is distributed in the lower plane. The tendency of the above (001) alignment intensity distribution implies the following as a factor: • [al] in the first region Z1 of the region relatively close to the MgO target T, due to the high energy of the particles reaching the § hai region The amorphous magnetic film loses its amorphous property; [M] in the fourth region Z4 of the region relatively far from the MgO target T, it is difficult to promote the %() due to the low energy of the particles reaching the region in 16 201122124 Polycrystallization or preferential orientation of the (001) plane. '°aa ', and the intensity relationship of the (001) alignment in the second region Z2, the third region Z3, and the fourth region Z4 in the first region Z is implied: the low-intensity region ship caused by the above (4)], _ The pressure is shifted to the surface of the Mg 〇 material T, and conversely 'shifts away from the Mg 〇 dry material τ as the film forming pressure decreases. In detail, the various particles reaching the amorphous magnetic film are generally repetitively released from the MgO dry material and then replenished with the silk, thereby lowering the power. That is, the various particles that reach the amorphous heteromembrane fly under the basis of the higher film forming pressure, the energy cake of the _particle is low, and on the other hand, the various particles fly under the lower entanglement. The cause of the suppression of the energy of the doping = 'the energy of the particles reaching the amorphous magnetic film at the lower film forming pressure becomes higher, so the low-strength region caused by the above [al] is remarkably exhibited. = In the higher resistance, the energy of the particles of the amorphous magnetic film becomes lower, so the low-intensity region caused by the above is remarkably exhibited. Therefore, it is impossible to darken the intensity relationship between Figure 5 (a) and Figure 5 (b) (thank you). With this difference in fine pressure, the robustness area occurs due to the lion's Offset. Here, if U is said to have a face-lifting sleeve, MgQ is used to form a film, as described in [al] above, particles with high energy will reach the amorphous magnetic film 'amorphously hit by such particles. The portion of the magnetic film loses its amorphous nature. Therefore, in order to maintain the amorphous nature of the amorphous magnetic film, the boundary pressure center is set to a low-strength degree region due to the above [al] in a state where the substrate S stops rotating, that is, from the substrate S (ie, The first zone Z1) is the most robust, that is, at 17 201122124, the above test is from the state of Fig. 5 (4) - the pressure of the state of Fig. 5 (b), that is, 33 mPa. According to the boundary pressure Ρλ thus set, in the initial stage of forming the Mg ruthenium film, the area of the smear of the smear of the sputum is formed in the film formation, and the film formation pressure can be formed at the film formation pressure. The intensity of the middle (GG1) alignment is 1% of the initial/Jew. Further, in the state in which the lower layer Mg ruthenium film is temporarily formed, since the amorphous property of the amorphous magnetic film is protected by it, even if the upper layer of the Mg ruthenium film is formed under the film formation pressure of the unboundary pressure pth, Damage caused by the above defects is not easy to occur. Therefore, the upper layer of the Mg ruthenium film can be formed in the form of (10)) the strength of the alignment is high. The energy of each scorpion when it comes to the scales and the magnetic slabs is the same as the collision (that is, the average rush is the more ancient. Ϊ low' minus the ground, if the average number of miscellaneous _ is less. The particles supplied by the magnetic film are more degraded to the number of non-integral collisions. Conversely, the number of collisions of the particles is less. Therefore, the number of times the particles released from the particles reach the substrate s (average The number of collisions is deducted and normalized....The lack of training / _ The average number of collisions is the distance from the collision of Mg0 dry material τ with other particles =

Ar is represented by the following formula (1) and formula (2): ^ = ΤΓ, and the % particles and ruthenium particles obtained according to the formula (1) to (3) 6 are Mg particles 盥〇 柯 早 ^ ~ 仃 、 、 、 6. Fig. and (10) are the graphs of the average free stroke 201122124 λχ (unit: m) and the film formation pressure (unit: called relationship). The various parameters used in the equations (1) to (3) are as follows. σ* : collision relative diameter nAr., molecular density of argon gas inside vacuum chamber 11 (such as 3) σχ ^Molecular diameter of particles X (Mg particles or ruthenium particles) out of the county CJAr · Molecular diameter of argon particles kB : Boltzmann constant PAr: internal pressure of vacuum chamber 11 (film formation pressure) T: internal temperature of vacuum chamber 11 (film formation temperature: 27. 〇 [number 1] formula (1) w*2nAf [number 2] 0' ^χ+σ; .· · Equation (2) [Number 3] η;

Ar

kBT • 243X1 〇22 -£αγ_ (3) As shown in Fig. 6, according to the equations (1) to (3), the average free line of the stroke particles is in the second = = force S domain. The value. Therefore, the recording material Ta Qing has a ''' and is the same degree of each other. Therefore, for the non-amorphous 19 201122124 2 magnetic radiance amorphous, the above-mentioned hemisphere pressure Pth, the flying distance of the particles released by the amount of the material τ is determined as the shortest flight distance, by The number of times (the secret, hereinafter referred to as the number of boundary collisions) obtained by dividing the mean free line x (the boundary material f by the stroke MFth) corresponding to the edge force is normalized. In other words, in the initial stage of forming the gorge film in the thin film forming apparatus 1 first, first on the amorphous-type film in the first pressure region (pressure P2) of the number of times of the boundary collision times or more The lower layer of the MgO film is formed, and then the upper layer of the Mg film is further formed under the second pressure region (pressure P1) which is less than the number of collisions of the number of boundary collisions. Further, in the above film forming conditions in which the boundary pressure Pth is 33 Pa, the boundary mean free path is 68 cm, and the shortest flying distance dts is 2 〇〇 mm, so the number of boundary collisions is 2.9. Next, an optimum film thickness of the underlying Mg ruthenium film formed by the film formation pressure of the boundary pressure Pth or more will be further described below with reference to the test examples shown in Figs. 7 and 8 . First, while rotating the substrate S, the following film formation conditions were used, and a plurality of MgO films were formed as the test examples by the film formation time under the different layers. For each test example, Mg0 was measured by the X-ray diffraction method (2〇〇). The intensity of the crest. The lower film formation time refers to a period from the time t1 to the time t2. Fig. 7 is a graph showing the relationship between the peak intensity of the Mg 〇 (2 〇〇) and the distance from the center of the substrate S, which are normalized by the film thickness, under the film formation time of each lower layer. Further, Fig. 8 is a graph showing the relationship between the average value of the peak intensity of Mg 〇 (2 〇〇) normalized by the film thickness and the film formation time (unit: sec) of the lower layer. (film formation conditions) • Substrate s: 矽 substrate (substrate: 8 inches) 20 201122124 • Dry material: MgO dry material (diameter: 5 inches) • Amorphous magnetic film: (CoFe) 〇.8B〇.2 • Substrate temperature: room temperature • Shortest flight distance dts: 200 mm • Tibetan plating gas: Ar • Low film forming pressure: 10 mPa • South film forming pressure: 157 mPa • Lower film forming time: 0 seconds, 60 seconds, 90 seconds, 120 seconds, 18 sec. • Upper film formation time: 3000 seconds As shown in Fig. 7, compared with the case where the lower film formation time is 0 seconds, in the case where the lower film formation time is 6 G seconds, 'outside the substrate s The peak intensity of the (200) peak increased from Lanshouling, but an increase in the peak intensity of (200) was observed in the central portion of the substrate s. Further, in the case where the film formation time of the lower layer is an anvil second, when the film formation time of the lower layer is 90 seconds, 岣〇(2〇〇) is observed on both the outer peripheral portion of the substrate s and the central portion of the substrate S. The increase of the peak intensity is the formation of the lower layer of the Mg ruthenium film on the basis of the ruthenium film formation pressure, which can suppress the decrease of the alignment strength of the 40% (〇〇1) of the it[al], and obtain the Mg 〇 ( 200) Increase in peak intensity. As shown in Fig. 8, when the film formation time of the lower layer is from leap seconds to 12 sec, the tendency of the peak intensity of MgO (2GG) is increased as the film formation time of the lower layer increases. On the other hand, when the film formation time of the lower layer exceeds 120 seconds and reaches 18 sec., j: a large decrease in the peak intensity of MgO (10) is observed. That is, the thicker the MgO film is formed on the basis of the high film forming pressure, the more the (10)) the (10) is caused by the decrease in the alignment strength, and the lower the lower layer of 201122124 When the film thickness of the MgO film is too thick, the peak intensity of the MgO(10)) of the entire underlayer film is affected, and the (10)) alignment strength is hindered. Further, the film thickness of the underlying Mg〇 film formed by the film formation time of 90 seconds to 120 seconds is 3 atomic layers or more and 4 atomic layers or less. Therefore, if the Mg 形成 which forms such a solution is still the oxidation of the lower layer, the protection against the amorphous magnetic film will not be insufficient, and the village suppression layer is called the ruthenium film, which is unnecessary thick, and more surely Increase the ton (4) (10)) alignment. As described above, according to the film forming method of the present embodiment, at least the following effects can be obtained. 0) The method comprises applying a rare gas to the surface Ta of the oxidized lock (Mg 〇), and forming an amorphous magnetic film on the surface of the substrate s to form a film of (10)). This age-forming shot is first carried out in a first pressure region (in the present embodiment, pressure ^2) in which the amorphous phase of the crystal grain film can be maintained to form a film of the lower layer. Next, in the second pressure region of the amorphous nature of the magnetic magnetic film (in the present embodiment, the pressure is (1), the upper layer of Mg is formed. According to this method, the lower layer of the MgO film can be used. Inhibition of the emission energy from the surface of the dry material η = (Mg or 〇) in the second pressure region is absorbed by the amorphous magnetic film, due to the modification of the surface of the 2 crystalline magnetic film, that is, the lower layer The film system can suppress the disappearance of the touch of the magnetic film, while the (10)) (2) of the Mg(10) formed on the amorphous magnetic film is maintained when the magnetic property of the street is maintained, and the particles released from the Τ reduction are not corrected. The average number of collisions in the magnetic film that maintains the amorphous nature is defined as the number of reference collisions. The lower layer of the MgO film is formed in the average of the number of hits, the number of hits, the number of hits, and the height of the cracks, p2 (also in the field). Thereafter, in the field of the force of the quasi-collision, the force P1 (also known as the pressure _^, tt MgO film, the upper layer of the Mg 〇 film.), according to this film formation method, can remain amorphous Under the amorphous nature of the magnetic enthalpy, the initial film of the MgO film is formed, and then the MgO film of the energy input is deposited on the amorphous magnetic film which is initially tilted. As a result, the high-energy human energy of the Lai-Sei-Sister is more difficult to be crystallized by the amorphous magnetic particles than the particles that are injected into the particles, and I can absorb the crystallization of the amorphous magnetic film. . Further, by such suppression of crystallization of the amorphous magnetic film, the (10)) alignment of the Mg ruthenium film can be improved. (3) In the step of forming the underlying Mg ruthenium film, a Mg ruthenium film composed of a thickness of 3 atomic layers or more and 4 atomic layers or less is formed. The protective effect of the underlayer film on the amorphous magnetic film is expressed in the second pressure region (pressure (1) is expressed in the initial stage of forming the MgO film. That is, the disappearance of the amorphous nature of the amorphous magnetic film is due to The particles released from the surface Ta of the dry material (that is, particles having high energy) in the second pressure region (pressure ρι) directly produce an amorphous magnetic film. If the lower layer is %() _ When the thickness is equal to or greater than the predetermined thickness, the protective effect on the amorphous property can be ensured regardless of the film thickness of the upper MgO film. In contrast, the upper layer Mg film formed at a low film forming pressure P1 is high. In the underlying MgO film formed by the film pressure P2, the energy of the particles constituting the film is insufficient, so that the (001) alignment tends to be weak. However, as described above, the film thickness of the underlying MgO film is set to be 3 atomic or more. In the case of a structure of 4 atomic layers or less, there is no shortage of protection against the amorphous nature of the amorphous magnetic film. 201122124 "Therefore, even if the total film thickness of the required Mg film is different, it is still possible. (10)) Unnecessary thick film formation of weak Mg film Enhance Mg〇 silent ⑽) alignment. More sure (4) From the surface of the sister Ta_, the secret is that it must be released uniformly for the self-mixing = Ta. Of course, the distribution of particles released from the surface Ta of the dry material may be biased due to the influence of the distribution of the electric name density formed near the surface of the material or the flow of gas near the surface Ta. Therefore, according to the case where the surface Ta of the dry material is opposite to the surface of the substrate s, or the surface of the dry material Ta is stationary relative to the surface of the substrate s, the material of the particles released from the surface η of the material may be straight. In the distribution of the film thickness of the reduced gorge (10), it becomes difficult to sufficiently obtain the film thickness uniformity of the underlying Mg film or the ((χπ) g ring of the upper layer of the MgO film. In this case, in consideration of this point, Therefore, in addition to the rotation of the substrate S with respect to the dry material surface Ta, the dry material surface Ta is closed to the substrate s, and the recording surface Ta is inclined with respect to the surface of the substrate s. Therefore, even from the MgO T The distribution of the released particles is not uniformly released from the surface Ta, and the unevenness is still reduced on the surface of the substrate s. Therefore, in addition to the (10) alignment of the MgO film, the film thickness uniformity of the MgO film can be improved. . (5) When the internal pressure of the vacuum chamber 11 is switched from the first pressure region (pressure stroke) to the second pressure region (pressure P1), the supply of the dry material τ or the supply of the rare gas to the vacuum chamber 11 is not Stop, so the state of the electrical equipment can be stabilized. In other words, if the supply of electric power or the supply of the rare gas is stopped in the area where the force is applied, the crane is generated in the electrical age at the initial stage of film formation in the second pressure region (ρι). As a result, it takes a lot of time to stabilize the state of the slurry, and it becomes difficult to obtain the desired characteristics in the initial formation of the Mg film. In this embodiment, in consideration of this, the high-cycle power is supplied to the Mg 〇 target τ and the flow rate of the helium gas is reduced, thereby performing the flow from the first pressure region (P2) to the second service region (P1). ) Switching. Therefore, in the first film forming stage of the second pressure region (P1), the state is easily stabilized. Therefore, in the initial film of the upper MgO film, the desired characteristics are easily obtained. Further, the above embodiment can be implemented and changed as follows. • When transferring from the high film forming pressure P2 (high pressure zone) to the low film forming pressure ρι (low pressure zone), the continuation of the high-ship power of the eucalyptus tree is also mentioned; however, it can be replaced. When transferring, the supply of the high-frequency power to the Mg0 dry material T is temporarily stopped; and the supply of the gas can be stopped while riding. In this way, in addition to the effects of the above (1) to (4), the transition from the high film forming pressure P2 to the low film forming pressure P1 can be avoided, and the reproducibility of the underlying layer of the enamel film and the upper layer Mg can be improved. Reproducibility of the alignment strength of the enamel film. • The surface Ta of the above-mentioned solid state is based on the premise that the surface of the substrate § is obliquely inclined, but it is not limited thereto. For example, it can also be used in the form of the surface of the funnel and the base. The above technology is made. That is, as long as the formation of the lower layer of oxygen in the high pressure region of the average impact of the hit counts, the average thief seam is not full of the number of inspections in the low-pressure region. The angle formed by L and the surface of the substrate S is not particularly limited. 1. In the step of forming the underlying MgO film, for example, in the case of Mg 〇 总 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In the case where the film thickness is thick, the lower MgO film may be formed to have 5 atomic layers or more. The effect of the above (1) can be obtained by the unique constitution. Forming a MgO film 'on an amorphous magnetic film on the basis of a plurality of different pressure values (film formation pressures) and measuring the MgO (200) peak intensity of the Mg film for a plurality of pressure values, and then The pressure at which the peak intensity of the first region Z1 fMg 〇 (2 〇〇) and the peak intensity of MgO (2GG) in the fourth region Z4 are converted is set as the boundary pressure Pth. However, it is not limited to the method of setting the boundary pressure: the MgO film 'private XX diffraction can be formed on the amorphous magnetic material under the basis of different strength values to prepare the magnetic crystallinity. With or without, set the boundary pressure Pth. Alternatively, the boundary pressure may be estimated from the amount of energy required to crystallize the amorphous magnetic film and the amount of energy of the various particles chatted from the MgQ pure τ on the amorphous magnetic film. That is, the boundary pressure Pth can be set to be averaged from the recording of the particles released from the dry material before reaching the amorphous magnetic film, and the wire remains amorphous from the amorphous magnetic film injected into the sister teaching. The pressure value up to the number of times of quality. The present invention has been made by the above-mentioned related embodiments, and the above embodiments are merely examples for implementing the present invention. It is to be understood that the disclosed embodiments are not intended to limit the scope of the invention. On the contrary, the modifications and equivalents of the spirit and scope of the invention are included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic configuration of a forming apparatus according to a cross-sectional structure and a block diagram of a fourth embodiment; FIG. 2 is a view showing a film forming parameter and a film forming pressure of a film forming method according to an embodiment; FIG. 3 is a graph showing the relationship between the distance from the center of the substrate and the peak intensity of the (001) alignment under a plurality of film forming pressures; FIG. 4 is a graph showing that the substrate is not at a plurality of film forming pressures and the center of the substrate. FIG. 5(a) and (b) are diagrams showing the in-plane distribution relationship between the substrate arrangement with respect to the target and the magnesium oxide alignment on the substrate; FIG. 6 is for the relationship between the distance and the peak half-bandwidth of the (001) alignment; The released peaks are shown as a graph of the relationship between the Lai force and the mean free path; Figure 7 is a graph of the relationship between the lower layer and the center of the substrate and the peak intensity of the (〇〇1) alignment; Figure 8 is a graph showing the relationship between the __ and the peak intensity of the lower layer picking step. [Description of main components] 10 film forming apparatus 11 vacuum chamber 12 exhaust unit 13 gas supply unit 14 substrate holder 15 substrate rotating device 18 cathode 19 back plate 21 magnetic circuit 27 201122124 22 door 22H opening 23 door rotation device 30 control Device 0 oblique incidence angle

As the substrate rotation axis passing through the center of the substrate S

At dry material normal dts shortest flight distance F1 low pressure setting under rare gas flow F2 high pressure setting rare gas flow GE south cycle power supply P0 reference pressure P1 low film forming pressure P2 high film forming pressure

Lar contour S substrate tl timing t2 timing T target

Ta dry material surface VG pressure detecting device Z1 first area Z2 second area Z3 third area 28 201122124 Z4 fourth area

Claims (1)

201122124 VII. Patent application scope · Formation alignment 1. A method for forming a film on a non-mail magnetic film: a magnesium oxide film comprising the following steps: each having an interesting amorphous color red-table-vacuum Inside the groove, a film formed by using a -N of a surface of a rare gas substrate is formed on the amorphous magnetic film, and the magnesium oxide film is formed on the amorphous magnetic film. The steps include: a magnesium-retaining film in the film; a film that is held by a non-m-material, which is not protected by the amorphous layer __ in the upper layer:: r-force region (10) • = application = patent dry circumference In the method of forming, the step of oxidizing the film comprises forming the underlying magnesium oxide film at a level of 3 atomic layers or more and a lower degree of 3. The thickness of the sub-layer is as follows. The method for forming a thin film according to the first aspect of the patent application, the step of the magnesium oxide film on the magnetic film of the material comprises: forming a square U, and supplying the side to the amorphous ===_ base _ ' - edge _ vacuum trough material m Wei material supplies high frequency power, and the surface of the rare gas Gu Guan - Hai dry material is separated from one of the rotation axes of the substrate, and relative to 30 201122124 The surface of the substrate is disposed obliquely. 4.=Please refer to the method of thinning in the 1st item, the method of cutting the oxygen in the amorphous magnetic film, including the supply of the material 峨2 to the vacuum tank (4). The flow rate is thereby switched from the first pressure chamber to the second pressure region. 5_ The method for forming a film according to any one of the preceding claims, wherein: the first pressure region of the quality is the (10)/up to 5 crystal f magnetic from the reward. The average collision between the film and the other particles before the film is one of the pressure regions when the amorphous magnetic film of the person emitted by the butterfly remains amorphous. ... 6. ===«Setting the occlusion-non-(four) magnetic film forming an aligned magnesium film, which is provided with: a hole 1 匕 which contains a substrate having a surface formed by the non-material film, and is provided for财1Wei body; 烕 材 为 具有 具有 具有 具有 具有 具有 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧The above-mentioned release of the injecting person: the amorphous magnetic property injected into the tree is not the domain of the particle released by the tree. r is not maintained amorphous - the second Lili District 31