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TW201129865A - Photosensitive composition, photosensitive solder resist composition, photosensitive solder resist film, permanent pattern, permanent pattern forming method and printed board - Google Patents

Photosensitive composition, photosensitive solder resist composition, photosensitive solder resist film, permanent pattern, permanent pattern forming method and printed board

Info

Publication number
TW201129865A
TW201129865A TW099132930A TW99132930A TW201129865A TW 201129865 A TW201129865 A TW 201129865A TW 099132930 A TW099132930 A TW 099132930A TW 99132930 A TW99132930 A TW 99132930A TW 201129865 A TW201129865 A TW 201129865A
Authority
TW
Taiwan
Prior art keywords
photosensitive
solder resist
permanent pattern
composition
photosensitive solder
Prior art date
Application number
TW099132930A
Other languages
Chinese (zh)
Inventor
Hiroki Sasaki
Daisuke Arioka
Hiroyuki Ishikawa
Toshiaki Hayashi
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW201129865A publication Critical patent/TW201129865A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C08F220/343—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate in the form of urethane links
    • C08F220/346—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate in the form of urethane links and further oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/12—Esters of phenols or saturated alcohols
    • C08F222/22—Esters containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/08—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated side groups
    • C08F290/14—Polymers provided for in subclass C08G
    • C08F290/147—Polyurethanes; Polyureas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/08—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds
    • C08L51/085—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds on to polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/035—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyurethanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Polyurethanes Or Polyureas (AREA)

Abstract

The present invention provides a photosensitive composition comprising an acid-modified vinyl group-containing polyurethane resin, an inorganic filler, a polymerizable compound, and a photo-polymerization initiator, and the said inorganic filler contains a silica particle having an average particle diameter d50 from 0.2 μ m to 3.0 μ m.
TW099132930A 2009-09-30 2010-09-29 Photosensitive composition, photosensitive solder resist composition, photosensitive solder resist film, permanent pattern, permanent pattern forming method and printed board TW201129865A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009228478 2009-09-30
JP2010079470A JP2011095705A (en) 2009-09-30 2010-03-30 Photosensitive composition, photosensitive solder resist composition, photosensitive solder resist film, and permanent pattern, method for forming the same, and printed board

Publications (1)

Publication Number Publication Date
TW201129865A true TW201129865A (en) 2011-09-01

Family

ID=43826123

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099132930A TW201129865A (en) 2009-09-30 2010-09-29 Photosensitive composition, photosensitive solder resist composition, photosensitive solder resist film, permanent pattern, permanent pattern forming method and printed board

Country Status (5)

Country Link
JP (1) JP2011095705A (en)
KR (1) KR20120086698A (en)
CN (1) CN102612666A (en)
TW (1) TW201129865A (en)
WO (1) WO2011040299A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859410B (en) * 2020-02-25 2024-10-21 日商佳能股份有限公司 Film forming device, film forming method and article manufacturing method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013029556A (en) * 2011-07-26 2013-02-07 Fujifilm Corp Photosensitive composition
CN109298601A (en) * 2012-09-18 2019-02-01 旭化成株式会社 Photosensitive resin composition
KR101792755B1 (en) 2014-10-28 2017-11-01 주식회사 엘지화학 Photo-curable and thermo-curable resin composition and dry film solder resist
US9768108B2 (en) * 2015-02-20 2017-09-19 Qualcomm Incorporated Conductive post protection for integrated circuit packages
JP6742785B2 (en) * 2015-08-13 2020-08-19 太陽インキ製造株式会社 Photosensitive resin composition, dry film and printed wiring board
WO2017135751A1 (en) 2016-02-05 2017-08-10 주식회사 엘지화학 Resin composition having photocurability and thermosetting property, and dry film solder resist
JP6902056B2 (en) 2017-02-07 2021-07-14 株式会社有沢製作所 Dry film, solder resist film, flexible printed wiring board and image display device
JP6409106B1 (en) * 2017-08-30 2018-10-17 太陽インキ製造株式会社 Curable resin composition, dry film, cured product and printed wiring board
JP7047341B2 (en) * 2017-11-21 2022-04-05 東洋インキＳｃホールディングス株式会社 Photosensitive coloring compositions for color filters and color filters
JP6759323B2 (en) * 2018-03-28 2020-09-23 太陽インキ製造株式会社 Photosensitive resin composition, two-component photosensitive resin composition, dry film and printed wiring board
CN115124351B (en) * 2022-07-18 2023-10-20 合肥圣达电子科技实业有限公司 High-temperature solder resist slurry for aluminum nitride multilayer and preparation method thereof

Family Cites Families (10)

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JP3247091B2 (en) * 1997-11-28 2002-01-15 日立化成工業株式会社 Photocurable resin composition and photosensitive element using the same
JP2000119373A (en) * 1998-10-13 2000-04-25 Toppan Printing Co Ltd Insulating resin composition and multilayer printed wiring board using the same
JP4364986B2 (en) * 1999-12-06 2009-11-18 関西ペイント株式会社 Photosensitive resin composition for photoresist and method for forming resist pattern
JP2007016184A (en) * 2005-07-11 2007-01-25 Fujifilm Holdings Corp Elastomer, photosensitive composition, photosensitive film, and method for forming permanent pattern
JP2009014745A (en) * 2006-03-16 2009-01-22 Fujifilm Holdings Corp Photosensitive composition, photosensitive film, photosensitive layered product, method of forming permanent pattern, and printed wiring board
JP2010145425A (en) * 2007-03-30 2010-07-01 Fujifilm Corp Photosensitive resin composition, photosensitive film, method for forming pattern by using the photosensitive film, and printed board
JP2009086376A (en) * 2007-09-28 2009-04-23 Fujifilm Corp Photosensitive composition, photosensitive film, photosensitive laminate, permanent pattern forming method, printed circuit board
JP5239520B2 (en) * 2008-06-03 2013-07-17 日立化成株式会社 Photosensitive resin composition, photosensitive film and photosensitive permanent resist
JP5183540B2 (en) * 2009-03-23 2013-04-17 太陽ホールディングス株式会社 Curable resin composition, dry film and printed wiring board using the same
JP5261242B2 (en) * 2009-03-23 2013-08-14 太陽ホールディングス株式会社 Curable resin composition, dry film and printed wiring board using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859410B (en) * 2020-02-25 2024-10-21 日商佳能股份有限公司 Film forming device, film forming method and article manufacturing method
US12313977B2 (en) 2020-02-25 2025-05-27 Canon Kabushiki Kaisha Film formation device, film formation method, and article manufacturing method

Also Published As

Publication number Publication date
WO2011040299A1 (en) 2011-04-07
JP2011095705A (en) 2011-05-12
CN102612666A (en) 2012-07-25
KR20120086698A (en) 2012-08-03

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