201128764 \r 六、發明說明： W . 【發明所屬之技術領域】 本發明係有關一種多層式陣列型發光二極體之封裝方法，尤其是 一種可間化製造過程’進而降低製造成本及時間之一種發光二極體之 封裝方法。 / 【先前技術】 按，的發光原理是利用半導體固有特性，它不同於以 • 糾白熾燈管的放電、發熱發光原理，而是將電流順向流入 半導體的PN接面時便會發出光線，所以LE：D被稱為冷光源 (cold light)。由於LED糸具有高耐久性、壽命長:輕巧^ 耗電量低且不含水銀等有害物質等之優點，故可廣泛^用於 …、月《又備產業中，且其通常以led陣列封裝方式應用在電子 . .看板、交通號志等領域。. 習知之LED封裝陣列系包括複數個Lm)，且每一個LED 結，具有—晶片安裝於—導線紅，並藉由—封裝谬體包 φ 覆晶片及部份導線架，使導線架之金屬引腳露出封膠體之外 而作為對外接點；在域成led _時，其系將複數個LED ^金屬引腳安褒至一印刷電路板之金屬聯機上，以藉此使該 等led相互電性連接。但此種封裝陣列受限於該⑽結 構本身之封農尺寸’導致體積無法限縮；且因每一⑽之散 熱途，僅能透過金屬引聊和絕緣電路板而已，散熱效果有限。 I知另有一種LED封裝陣列系將複數個LE£)晶片直接配置 於印刷電路板上進行封裝。詳言之，在印刷電路板上設有與 ^個LED晶片相互對應之金屬聯機層，將該等led晶片直接 安裝於印刷電路板上’並與該金屬聯機層形成電性連接；最 201128764 後再利用-封歸體包覆印刷電路板上之 卩 一 LED封裝陣列。 件即可元成 崎當物之自 線路圖案财、败製_ t:nr、_ 接，== ======壽201128764 \r VI. Description of the Invention: W. Technical Field of the Invention The present invention relates to a method for packaging a multilayer array type light-emitting diode, in particular, an inter-processable manufacturing process, thereby reducing manufacturing cost and time. A method of packaging a light emitting diode. / [Prior Art] The principle of illuminating is to use the inherent characteristics of the semiconductor. It is different from the principle of discharge and heat emission of the illuminating tube. Instead, it will emit light when flowing current into the PN junction of the semiconductor. So LE:D is called cold light. Because LED 糸 has high durability and long life: light weight, low power consumption, and no harmful substances such as mercury, it can be widely used in... and in the industry, and it is usually packaged in LED arrays. The method is applied in the fields of electronics, billboards, traffic signs, etc. The conventional LED package array includes a plurality of Lm), and each LED junction has a wafer mounted on the wire red, and the packaged body package φ covers the wafer and a part of the lead frame to make the metal of the lead frame The pin is exposed outside the sealing body as an external contact; when the domain is led _, it is mounted on a metal circuit of a printed circuit board by a plurality of LED metal pins, thereby making the leds mutually Electrical connection. However, such a package array is limited by the size of the (10) structure itself, which results in a volume that cannot be limited; and because of each (10) heat transfer, it can only pass through metal talks and insulated circuit boards, and the heat dissipation effect is limited. I know that another type of LED package array is to directly package a plurality of LE £) wafers on a printed circuit board for packaging. In detail, a metal interconnection layer corresponding to each of the LED chips is disposed on the printed circuit board, and the LED wafers are directly mounted on the printed circuit board and electrically connected with the metal interconnection layer; The re-use-enclosed body covers the first LED package array on the printed circuit board. Pieces can be formed into the real thing of the line of the goods, the line of money, defeat _ t: nr, _ connect, == ======
以大幅降健造縣及製造_，並⑽發纽能。 【發明内容】 本發明的主要目的在於提供一種多層式陣列型發光二極 體之封裝方法，-種多層式陣列型發光二極體之封裝方法， 係包含：则-製作方法形成—基板，其中該基板至少且有 -出光區及兩導線架容置槽，該出光區係、為該基板之中間區 塊’該兩導線架容置槽係相連於該出光區之前後側區塊，相 鄰於該出光區之左、右触區塊設置有至少一第一固定孔及 至少-訊，又麵容置槽下雜社糊絲细彡成有呈 間隔設置之兩邊槽；將兩導、雜定位於絲板之兩導線架容 置槽之容置空财’其中該兩導線架不接觸於絲板，該導 線架最靠近該出光區一侧之部份為一内連接區，該導線架最 遠離於該出光區一側之部份為一外連接區，該外連接區至少 須超出該基板之周緣，該内連接區及該外連接區之間設有至 少一第二固定孔及至少一第二卡合縫；以射出成型方式在基 板之該出光區以及該基板設有該穿孔之以外部份形成有一封 袭模塊’該封裝模塊之包埋區域由下往上包含有該兩邊槽、In order to greatly reduce the health of the county and manufacturing, and (10) to the New Zealand. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for packaging a multilayer array type light emitting diode, and a method for packaging a multilayer array type light emitting diode, comprising: a method for forming a substrate, wherein The substrate has at least a light-emitting area and two lead frame receiving grooves, and the light-emitting area is an intermediate block of the substrate. The two lead frame receiving grooves are connected to the front side block of the light-emitting area, adjacent to each other. The left and right contact blocks of the light exiting area are provided with at least one first fixing hole and at least - and the other side of the groove is arranged to have two sides grooves arranged at intervals; The two lead frames are located in the receiving space of the wire plate, wherein the two lead frames are not in contact with the wire plate, and the portion of the lead frame closest to the side of the light exiting region is an inner connecting region, the lead frame The portion farthest from the side of the light exiting region is an outer connecting region, the outer connecting portion must be at least beyond the periphery of the substrate, and at least one second fixing hole is disposed between the inner connecting portion and the outer connecting portion and at least a second snap seam; in the form of injection molding The plates of the zone and other than the substrate formed with the perforated portion of the passage has a module 'embedded region of the package from bottom to top module comprising on both sides of the groove,
I I201128764 2線架容置射未被料線架所填滿空間以及該導線架之 =不包埋_連接區上方及該外連朋，又該封裝 杈塊包埋於該出光區之周邊部分並填滿該第一固定孔， 在㈣區表面社之部分絲成—上封賴塊，該上 縣松塊之_面形成有-透鏡卡合槽；將發光二極體晶粒 :在該紐之該出规表面上複數連接導線使該等 毛光二極體晶粒與該導線架形成電性連接；令—絕緣保護層 將該等發光二減晶純覆住；贿、雜制觸形成有— 螢光層；以及直接射城型-透鮮於該封賴塊上，該透 鏡罩之底部會將該透鏡卡合槽内部整個填滿。 【實施方式】 以下配合圖就鱗符騎本㈣之實施方式做更詳細 的說明，俾使熟f該項技藝者在研讀本綱書後能據以實施。 參閱第-圖至第三圖。如第一圖的步驟S10所示，首先 利用-製作方法形成-基板1，該製作方法可以是一衝壓成 型方法、-化學蝴方法、方法他適#製作方法， 該基板1係為一金屬材，該金屬材質可以是一銅、鋁、銅合 金、鋁合金或其他適當金屬材質，該基板丨之表面可進一步 鍍上一導熱反光層（圖面未顯示），該導熱反光層之材質可以 是一鈀（Palladium)、一鎳、一銀、一白金合金或其他適當 材質，該導熱反光層具有優異熱傳導性並增強光線反射率。 其中被製作完成後之該基板1至少具有一出光區U及兩 導線架谷置槽13，第二圖中斜紋部分為基板剖切後之實體部 伤，该出光區11係為該基板1之中間區塊，該出光區11之 201128764 . 麟％^有-f*合槽19，該第--^合槽19之斷面係呈 .V、凹型、U麵或其他適當形狀，該第—卡合槽19係預留 於後面封糾使用’細導縣容置槽丨3軸耕該出光區 11之前後舰塊，該兩導赫容置槽13下方板體之外側底 緣處形成有兩呈間隔設置之邊槽131，該兩邊槽131概呈長 條型’而相鄰於該出光區U之左、右側邊區塊H置有至少一 H孔15及至少—穿孔17’該第—固定孔15之内壁面 形成有-凸緣151，或者亦可如本實施方式所示，在左、右 • 规之區塊各設置有—個第一固定孔15及兩個穿孔17，兩 穿孔17 I設置於第一固定孔15之兩側或該基板1之端角處。 參閱第四®，本發明之多層式陣卿發光二極體之封裝 方法之導線架示意圖。接著進入步驟S2G，將兩導線架3定 ，於該基板1之兩導線架容置槽13之容置空間中其中該兩 •.導線架3不接觸於該基板h該導線架3之上表面至少不低 於與该出光區n之表面，該導線架3最靠近該出光區^ 一 :之部份為—内連接區，該導_ 3最遠離於該出光區11 φ 份為一外連接區，該外連接區至少須超出該基板1 外該外連接區並設有複數連接孔33，該内連接區及該 接區之間没有至少—第二固定孔31及至少二卡人 圖面所式，設置有二陶 m 八中5玄第一卡合槽31a之斷面可以是¥型、一凹 型'一U型或其他適當形狀。 & 、凹 參閱第五圖，本發明之多層式物型發光二極體之 式接著進入步驟S30,以射出成财 土板1之該出先區11及設有該穿孔17之以外部份形成 201128764 * 有一封裝模塊5，該封裝模塊5所使用之封裝材料為一環氧 樹脂（Ep〇xy)或其他適當材質，該封裝模塊5之包埋區域從 該兩邊槽131起到該導線架容置槽13中未被該導線架3所填 滿空間’以及該導線架3之上方但不包埋該内連接區上方及 該外連接區周圍，也就是該導線架3之該第二固定孔31及該 第二卡合縫31a之内部空間會被填滿，又該封裝模塊5包埋 於該出光區11之周邊部分並填滿該第一固定孔15及該第一 卡合槽19之内部空間，如此該封裝模塊5會與該基板丨及該 φ 導線架3緊密地封裝成一體。 该封裝模塊5在出光區11表面以上之部分在此定義成一 上封裝模塊51，該上封裝模塊51之内壁面形成有一透鏡卡 合槽511 ’該透鏡卡合槽511之斷面呈一 v型、一凹型或一 ^ 型或其他適當形狀。 參閱第六圖 、 尽發明之多層式陣列型發光二極體之封裝I I201128764 2-wire rack-mounting is not filled by the material line frame and the lead frame is not embedded _ above the connection area and the external connected party, and the package block is embedded in the peripheral part of the light-emitting area And filling the first fixing hole, the wire-forming portion of the surface of the (4) area, the surface of the upper pine block forming a lens-engaging groove; the light-emitting diode grain: The plurality of connecting wires on the surface of the device are such that the matte diode crystals are electrically connected to the lead frame; the insulating protective layer covers the light-emitting two crystals; the bribe and the miscellaneous touch form There is - a fluorescent layer; and a direct ejaculation type - permeable to the block, the bottom of the lens cover will fill the entire interior of the lens engagement groove. [Embodiment] The following is a more detailed description of the implementation of the scale riding (4) in conjunction with the figure, so that the skilled person can implement it after studying the program. See figures - to figure three. As shown in step S10 of the first figure, the substrate 1 is first formed by a method of fabrication, which may be a stamping method, a chemical butterfly method, a method, and a method of manufacturing the substrate 1 as a metal material. The metal material may be a copper, aluminum, copper alloy, aluminum alloy or other suitable metal material, and the surface of the substrate may be further plated with a thermal reflective layer (not shown), and the material of the thermal reflective layer may be A Palladium, a nickel, a silver, a platinum alloy or other suitable material, the thermally conductive reflective layer has excellent thermal conductivity and enhances light reflectance. The substrate 1 after the fabrication is completed has at least one light exiting region U and two lead frame valleys. In the second figure, the twill portion is a physical damage after the substrate is cut, and the light exiting region 11 is in the middle of the substrate 1. Block, the light-emitting area 11 of 201128764. Lin%^ has -f* joint groove 19, the section of the first-shaped groove 19 is .V, concave, U-face or other suitable shape, the first card The groove 19 is reserved for the rear seal and is used to form the second block before the bottom edge of the plate body under the two guides. The side grooves 131 are spaced apart, and the two side grooves 131 are substantially elongated. The left and right side blocks H adjacent to the light exiting area U are provided with at least one H hole 15 and at least — a through hole 17'. The inner wall surface of the hole 15 is formed with a flange 151, or as shown in the embodiment, each of the left and right sections is provided with a first fixing hole 15 and two perforations 17, and two perforations 17 I is disposed on either side of the first fixing hole 15 or at an end corner of the substrate 1. Referring to the fourth aspect, the lead frame of the package method of the multilayered array LED of the present invention is shown. Then, the process proceeds to step S2G, and the two lead frames 3 are fixed in the accommodating spaces of the two lead frame accommodating grooves 13 of the substrate 1. The two lead frames 3 do not contact the substrate h and the upper surface of the lead frame 3 At least not lower than the surface of the light exiting region n, the portion of the lead frame 3 closest to the light exiting region is: an inner connecting region, and the guiding portion 3 is farthest from the light exiting region 11 φ is an external connection The outer connecting area must be at least beyond the outer connecting area of the substrate 1 and provided with a plurality of connecting holes 33. There is no at least a second fixing hole 31 and at least two card faces between the inner connecting area and the connecting area. In the formula, the cross section of the first engaging groove 31a of the two ceramics m zhongzhong 5 may be a ¥ shape, a concave type, a U shape or other suitable shape. Referring to FIG. 5, the multi-layer type light-emitting diode of the present invention proceeds to step S30 to be formed into the pre-existing region 11 of the rich soil plate 1 and the portion other than the perforation 17 is formed. 201128764 * There is a package module 5, the package material used in the package module 5 is an epoxy resin (Ep〇xy) or other suitable material, and the embedded region of the package module 5 from the two-side slot 131 to the lead frame The space in the slot 13 is not filled by the lead frame 3 and above the lead frame 3 but not above the inner connecting area and around the outer connecting area, that is, the second fixing hole of the lead frame 3 The inner space of the second engaging slot 31a is filled, and the package module 5 is embedded in the peripheral portion of the light exiting area 11 and fills the first fixing hole 15 and the first engaging groove 19 The internal space is such that the package module 5 is tightly packaged integrally with the substrate and the φ lead frame 3. The upper part of the surface of the light-emitting area 11 is defined as an upper package module 51. The inner wall surface of the upper package module 51 is formed with a lens engagement groove 511. The lens engagement groove 511 has a v-shaped cross section. , a concave or a type or other suitable shape. Refer to the sixth figure, the package of the multi-layer array type LED package of the invention.
方法之發光二極體晶粒示_，參閱第七圖，本發明之多層 式陣列型發光二極體之封裝方法之連接導線示意圖。接著^ 入步驟S40 ’將發光二極體晶粒6貼附在該 區Π表面上，射轉發光二極體晶㈣之抑是一陣 2他型式之排列方式，接著進入步驟S5G，利用複數連接 =線w使該等發光二極體晶粒6與該導線架3形成電性連 接，藉使該等發光二極體晶粒6與該導線架3形成一電路。 參閱第八圖’本發明之多層式_型發光二極體之封裝 之保護層示朗，參_九圖，本發明之多層式陣列型 ςβη 一極體之封裝方法之螢光層示賴。接著進入步驟 ’令-絕緣保護層7包覆於該等發光二極體晶粒6，該絕 蒦層7係以—黏附方式包覆該等發光二極體晶粒6，該 [S1 7 201128764 * ，緣保護層7之m可歧-雜材肢魏適當材質，接 者進入步驟7，該絕緣保護層7周圍形成有—螢光層8 ’該 ^光匕8係藉塗佈方式m注方式以形成於該絕緣保護層 上省螢光層8之材料係為一磷光劑或其他適當材質。 、、錢第十®，本發明之多層式_光二極體之封裝 方法之透鏡罩示意圖，最後進入步驟S8G，直接射出成型-罩9於該封裝模塊5上，該透鏡罩9之底部會將該透鏡 ^曰511内部整個填滿，如此該舰罩5可穩固地與該封 • 裝模塊5結合’同時保護包覆内部之重要元件。 、上所述者僅為用以解釋本發明之較佳實施例，並非企 =據以對本發明做任何形紅之關，是以，凡有在相同之 :月精神下所作有關本發明之任何修飾或變更，皆仍應包括 在本發明意圖保護之範疇。 【圖式簡單說明】 =圖為顯示本發明之多層式陣列型献二極體之封裝 方法之流程圖。 ^圖為顯林發明之多層式_型發光二極體之封裝 万法之基板立體示意圖。 二HA崎的平面剖視圖。 二‘、、顯不本發明之多層式陣列型發光二極體之封裝方 去之導線架示意圖。 法之=顯不本發明之多層式陣列型發光二極體之封裝方 之封裝模塊示意圖。 圖為.4不本發明之多層式_型發光二極體之封裝方 201128764 法發光二極體晶粒示意圖。 、 第七圖為顯示本發明之多層式陣列型發光二極體之封裝方 法之連接導線示意圖。 第八圖為顯示本發明之多層式陣列型發光二極體之封裝方 法之保護層示意圖。 第九圖為顯示本發明之多層式陣列型發光二極體之封裝方 法之螢光層示意圖。 第十圖為顯示本發明之多層式陣列型發光二極體之封裝方 法之透鏡罩示意圖。 【主要元件符號說铜】 S10、S20、S30、S40、S50、S60、S70、S80 步驟 1基板 11出光區 • · · · · 13導線架容置槽 15第一固定孔 17穿孔 19第一卡合槽 131邊槽 151凸緣 3導線架 31第二固定孔 31a第二卡合槽 33連接孔 5封裝模塊 51上封裝模塊 201128764 511透鏡卡合槽 6發光二極體晶粒 7保護層 8螢光層 9透鏡罩 W連接導線The light-emitting diode pattern of the method is shown as a schematic diagram of the connecting wire of the package method of the multilayer array type light-emitting diode of the present invention. Then, in step S40, the light-emitting diode die 6 is attached to the surface of the region, and the light-emitting diode crystal (four) is arranged in a pattern of 2 histograms, and then proceeds to step S5G, using a complex connection = The wire w electrically connects the LEDs 6 to the lead frame 3, so that the LEDs 6 form an electrical circuit with the lead frame 3. Referring to the eighth embodiment, the protective layer of the package of the multi-layer type luminescent diode of the present invention is shown in Fig. 9, and the phosphor layer of the package method of the multilayer array type ςβη one of the present invention is shown. Then proceeding to step 'enable-insulating protective layer 7 is coated on the light-emitting diode crystal grains 6, and the insulating layer 7 is coated with the light-emitting diode crystal grains 6 in an adhesive manner, [S1 7 201128764 *, the edge of the protective layer 7 can be misfigured - the appropriate material of the miscellaneous material Wei, the accessor enters step 7, the insulating protective layer 7 is formed around - the fluorescent layer 8 'the ^ 匕 8 is by the coating method m note The material of the phosphor layer 8 formed on the insulating protective layer is a phosphor or other suitable material. , the tenth version of the money, the lens cover of the multi-layered photodiode packaging method of the present invention, finally proceeds to step S8G, and directly projects the molding-cover 9 onto the package module 5, and the bottom of the lens cover 9 will The inside of the lens 511 is completely filled, so that the hood 5 can be firmly combined with the package module 5 while protecting the important components inside the package. The above description is only for explaining the preferred embodiment of the present invention, and it is not intended to make any reddening of the present invention, so that any of the inventions relating to the present invention can be made under the same spirit of the moon. Modifications or alterations are still intended to be included within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS = The figure shows a flow chart showing a packaging method of the multilayer array type diode of the present invention. ^ The picture shows the multi-layer _ type light-emitting diode package of Xianlin invention. A plan sectional view of the second HA. 2. The schematic diagram of the lead frame of the package of the multilayer array type light-emitting diode of the present invention. The method of the package module of the package of the multilayer array type light-emitting diode of the present invention is not shown. Fig. 4 is a package diagram of the multi-layer type luminescent diode of the present invention. And the seventh figure is a schematic view showing a connecting wire of a packaging method of the multilayer array type light emitting diode of the present invention. Fig. 8 is a view showing the protective layer of the encapsulation method of the multilayer array type light-emitting diode of the present invention. The ninth drawing is a schematic view showing a phosphor layer of the encapsulation method of the multi-layered array type light-emitting diode of the present invention. Fig. 10 is a view showing a lens mask of a packaging method of the multilayer array type light emitting diode of the present invention. [Main component symbol says copper] S10, S20, S30, S40, S50, S60, S70, S80 Step 1 Substrate 11 light exit area • · · · · 13 lead frame receiving groove 15 first fixing hole 17 perforated 19 first card Groove 131 side groove 151 flange 3 lead frame 31 second fixing hole 31a second engaging groove 33 connecting hole 5 package module 51 upper package module 201128764 511 lens engagement groove 6 light emitting diode die 7 protective layer 8 Light layer 9 lens cover W connecting wire