201126747 六、發明說明： 【發明所屬之技術領域】 一種發光元件，特別是一種關於進行兩次基板切割之發 光元件及其製造方法。 【先前技術】 • 發光二極體Qight-emitting diode，LED)的發光原理是利 用電子在η型半導體與p型半導體間移動的能量差，以光的 形式將能量釋放，這樣的發光原理係有別於白熾燈發熱的發 光原理，因此發光二極體被稱為冷光源。此外，發光二極體 具有南耐久性、壽命長、輕巧、耗電量低等優點，因此現今 的…、明市場對於發光二極體轩厚望，將其視為新—代的照 鲁 月工具，已逐漸取代傳統光源，並且應用於各種領域，如交 通號諸、背光模組、路燈照明、醫療設備等。 第1圖係習知之發光元件結構示意圖，如第1圖所示， ^去之發光元件100 ,包含有—透明基板⑴…位於透明基 板1〇上之半導體疊層12 ’以及至少-電極14位於上述半導 體a層12上，其中上述之半導體疊層12由上而下至少包含 第導電型半導體層120、-活性層122，以及-第二導 201126747 電型半導體層124。 此外，上述之發光元件丨⑻更可以進一步地與其他元件 、’’ δ連接以形成一發光裝置(iight_em池％叩阿伽5)。第2圖 4 為1知之發光裝置結構示意圖，如第2圖所示，一發光裝置 匕s 具有至少一電路202之次載體(sub-mount)20 ;至 少一焊料(S〇lder)22位於上述次載體2〇上，藉由此焊料22 將上述發光元件100黏結固定於次載體2〇上並使發光元件 100之基板10與次載體20上之電路2〇2形成電連接；以及， 一電性連接結構24 ’以電性連接發光元件ι〇〇之電極14與 次載體20上之電路202 ;其中，上述之次載體2〇可以是導 線条(lead frame)或大尺寸鑲嵌基底(m〇unting substrate)，以方 便發光裝置200之電路規劃並提高其散熱效果。 然而，如第1圖所示，於習知之發光元件1〇〇中，由於 透明基板10之表面係一平整表面，且透明基板1〇之折射率 與外部環境之折射率不同，因此活性層122所發出之光線A 由基板進入外部環境時，容易形成全反射(T〇tal201126747 VI. Description of the Invention: [Technical Field of the Invention] A light-emitting element, in particular, a light-emitting element for performing two substrate cuttings and a method of manufacturing the same. [Prior Art] • The principle of illumination of a light-emitting diode (Qright-emitting diode, LED) is to use an energy difference between an n-type semiconductor and a p-type semiconductor to release energy in the form of light. Unlike the principle of illuminating the incandescent lamp, the illuminating diode is called a cold source. In addition, the light-emitting diode has the advantages of south durability, long life, light weight, low power consumption, etc., so today's market, the bright market for the light-emitting diodes, is regarded as a new-generation photo It has gradually replaced traditional light sources and is used in various fields, such as traffic numbers, backlight modules, street lighting, medical equipment, etc. 1 is a schematic view showing the structure of a conventional light-emitting element. As shown in FIG. 1, the light-emitting element 100 includes a transparent substrate (1), a semiconductor laminate 12' located on the transparent substrate 1'', and at least the electrode 14 is located. The semiconductor layer 12 above, wherein the semiconductor stack 12 comprises at least a first conductive type semiconductor layer 120, an active layer 122, and a second conductive 201126747 electrical semiconductor layer 124 from top to bottom. Further, the above-described light-emitting element 丨(8) may be further connected to other elements, ''δ to form a light-emitting device (iight_em pool% 叩Aga 5). FIG. 2 is a schematic view showing the structure of a light-emitting device. As shown in FIG. 2, a light-emitting device 匕s has at least one sub-mount 20 of the circuit 202; at least one solder 22 is located above. On the secondary carrier 2, the light-emitting element 100 is bonded and fixed to the secondary carrier 2 by the solder 22, and the substrate 10 of the light-emitting element 100 is electrically connected to the circuit 2〇2 on the secondary carrier 20; The connecting structure 24' is electrically connected to the electrode 14 of the light-emitting element ι and the circuit 202 on the secondary carrier 20; wherein the secondary carrier 2 can be a lead frame or a large-sized mosaic substrate (m〇) Unting substrate) to facilitate the circuit planning of the light-emitting device 200 and improve the heat dissipation effect. However, as shown in FIG. 1, in the conventional light-emitting element 1 , since the surface of the transparent substrate 10 is a flat surface, and the refractive index of the transparent substrate 1 is different from the refractive index of the external environment, the active layer 122 The emitted light A is easy to form total reflection when the substrate enters the external environment (T〇tal
InternalInternal
Reflection，TIR) ’降低發光元件loo之光摘出效率。 此外，在氮化物發光元件之結構中，藍寶石（sapphire) 及碳化矽（SiC)為其基板之主要材料。在氮化物發光元件之 201126747 製程中，包括以晶圓作為基板並於其上形成發光疊層，再將 晶圓切割成晶片的製程。傳統的切割方法係利用—鑽石刀作 為_工具；另-種晶圓_成“之方法係_雷射光束 的局能量密度，將基板巾原子與原子之鍵結裂解，來達到切 割並分離晶®之目的。然而在雷射切割的製財，因雷射光 束之高能量密度職生的局部高溫，使基板晶崎Reflection, TIR) ' Reduces the light extraction efficiency of the light-emitting element loo. Further, in the structure of the nitride light-emitting element, sapphire and tantalum carbide (SiC) are the main materials of the substrate. In the 201126747 process of the nitride light-emitting device, a process of forming a light-emitting stack using a wafer as a substrate and then cutting the wafer into a wafer is included. The traditional cutting method uses the diamond knife as the tool, and the other method of the wafer _ into the method of the laser energy density of the laser beam, the substrate towel atom and the atom bond are cracked to achieve the cutting and separation of the crystal The purpose of ®. However, in the production of laser cutting, due to the high energy density of the laser beam, the local high temperature of the occupational potential makes the substrate crystal
於切割道上堆制^礙物，此财物會吸收發光元件解 出的光線’進而降低晶片的出光效率。因此於雷射切割· 何有效去除副產物’以提昇晶片的出纽率，為改善發光元 件性能之一重要課題。 另外，若是基板在形成發光疊層的另—側具有金屬層， 更使雷射無法從金屬層這-嫩基板吸收，*增加雷射切割 基板的困難度。 【發明内容】 一種發光元件製造方法，其步驟至少包含：提供一基 板第表面與第一表面，其中第一表面與第二表面相 對形成至：>、發光疊層於基板之第一表面上；形成一金屬 層於基板之第二表面上；提供_第一雷射於金屬層開出複數 條走道區並裸路出部分第二表面；以及提供—第二雷射照射 201126747 於金屬層走道區裸露出之部分第二表面以在基板内形成複 數個聚光區。 【實施方式】 本發明揭露一種發光元件，特別是一種關於進行兩次基 板切割之發光元件及其製紗法。為了使本發明之敘述更加 詳盡與完備，請參照下列描述並配合第3A圖至第3K圖之圖 式，圖中各層的比例僅為示意，並非依照實際尺寸放大。 第3A圖至第3K圖為本發明製造流程結構示意圖，如第 3Α圖所tf，提供一基板3〇，其中基板3〇包含一第一表面 304與—第二表面3〇2，其中第—表面辦係與第二表面弧 相對，接者’如第3Β圖所示，形成複數半導體蟲晶層31於 此基板30之第—表面3〇4上，其中半導體蟲晶層31由下而 上至少包含—第—導電型半導體層310、-活性層312，以 及一第二導電型半導體層314。 、Ρ近後如第3C圖所*，利用微影侧技娜刻上述半 導體蟲阳層31 ’崎露部分基板3()並且使半導舰晶層η 形成複數台狀結構之發光疊層32，其中每—發錢層^均 裸露部分之第—導電型半導體層31〇。 201126747 上述之基板30之材質可以是藍寶石(sapphire)、氧化辞 (ZnO)等透明基板’於本實施例中則係採用藍寶石基板；而 發光疊層32由下而上包含第一導電型半導體層31〇、活性層 312以及第二導電型半導體層314，其材料包含一種或一種 以上之物質選自鎵(Ga)、鋁(A1)、銦(In)、砷(As)、磷(P)、氮 (N)以及矽(Si)所構成之群組’諸如氮化鎵(GaN)系列材料或磷 # 化鋁鎵銦(AlGalnP)系列材料等。 之後，再如同第3D圖所示，於發光疊層32上形成一蝕 •刻保護層34，於其他實施例中，此蝕刻保護層34亦可以同 時覆蓋於發光疊層32與基板30上，其中上述之姓刻保護層 34之材質可以是二氧化石夕(si〇2)或氮化石夕(·χ)等材料。 之後’研磨基板30的第二表面302至厚度少於 φ 2〇〇μιη’並在基板30之第二表面302上形成一金屬層5〇。 Ρ現後，如第3E-3F圖所示，提供一第一雷射，以能 量小於1.5 W，速度大於40 mm/sec之雷射光束照射金屬層 5〇，於金屬層50之上形成複數條走道區36，其於近基板3〇 側之寬度W1約為30-50μιη，並使部分基板3〇之第二表面 302裸露出來。第3G圖為第3F圖之上視結構示意圖，如第 3G圖所示，於本發明實施例中，以第一雷射光束形成之複 201126747 數條走道區36係圍繞於複數發光疊層32之周圍。在一實施 例中’此雷射光束可為一 Nd-YAGUVlaser。 在一實施例中，接著，可以酸液、水或氣體清洗走道區 36之上的雷射副產物。在一實施例中，可以姓刻液於攝氏 100至300度之溫度條件下蝕刻上述走道區36約10至5〇分 I里以清除雷射造成之副產物，於本實施例中，較佳之操作條 件係於攝氏150至250度之溫度條件下，以硫酸田2別〇4)與 Θ酸(H3P〇4)之濃度比為三比一之钱刻液姓刻約2〇至4〇分 鐘；於其他實施例中，蝕刻液亦可選用磷酸溶液；於其他實 施例中，也可使用氮氣或水清洗之。 之後，如第3H圖所示，提供一第二雷射7〇，以雷射能 1 0.05〜0.35W，速度1〇〇〜6〇〇 mm/sec且焦距為距離基板 30-60μηι之雷射光束照射基板30之第二表面3〇2，使第二雷 射70聚焦於在基板30内部，而在基板内部形成複數個聚光 區37，因此基板30表面不會遭到損壞，可減少吸光效應。 此聚光區之長度L2可約為1(Μ(Κ) μιη，寬度W2可為小於 5μιη，聚光區之形狀可為K點狀、長方體或其他圖形。在一 實施例中，此雷射光束可為-紅外線或綠光雷射，例如可為 Nd-YAG 頻率 femt〇-Second 或 pic〇_sec〇nd 丨繼、Nd Y^ 201126747 laser、Nd-YLF laser 或鈦藍寶石雷射（titanium laser) 〇 最後’再如第31圖所示，劈裂基板30之第一表面3〇4, 以形成複數發光元件300。不僅如此，更可以如第3J圖所示， 於劈裂前，形成至少一透明導電氧化(TransparentQ)nductive Oxide，TCO)層38於發光疊層32上以及至少一電極4〇於透 明導電氧化層38上後，再劈裂基板30之第一表面3〇4，以 形成複數發光元件300。在一實施例中，如圓第3K所示， 也可先於基板30之第一表面304形成一凹溝9〇後，再劈裂 以形成複數發光元件3〇〇。 透明導電氧化層38之材質選自包含—種或一種以上之 材料選自氧仙輝TG)、氧脑_、魏鄉η〇)、氧化 鎘錫(CT0)、氧化銻錫(ΑΤ0)、氧化銻鋅(Αζ〇)與氧化辞⑽） 所構成之群組。 在本發明—實施例中，上述第一雷射60與第二雷射70 可整合在同1射祕彻，之中，且第與第 二雷射70可為不_雷射絲^參照下列描述並配合第* 圖至第5C圖之圖式。 第4圖為雷射系統結構與製程示_，如第4圖所示， 在製作上述第3Ε圖之製程時，將基板之第一表面向下 201126747 擺放於第一平台4G1之上’而使金朗50露出。之後依上 述製程，先以第-雷射60照射金屬層％，於金屬層％之上 形成減條走道區36，並使基板之部份第二表面3〇2裸 露出來之後，再以第二雷射7G照射基板3()裸露出之第二表 面302 ’而在基板3G内部形成複數個聚光區37。在一實施 例中，也可在照射第二雷射7G之前先在第—平台4〇The object is piled up on the cutting path, and the property absorbs the light emitted by the light-emitting element, thereby reducing the light-emitting efficiency of the wafer. Therefore, it is an important issue for improving the performance of the light-emitting element in laser cutting and how to effectively remove by-products to increase the wafer's exit rate. Further, if the substrate has a metal layer on the other side of the light-emitting laminate, the laser cannot be absorbed from the metal substrate, and the difficulty of laser cutting the substrate is increased. SUMMARY OF THE INVENTION A method for fabricating a light-emitting device, the method comprising the steps of: providing a substrate first surface and a first surface, wherein the first surface and the second surface are opposite to each other: >, the light emitting layer is laminated on the first surface of the substrate Forming a metal layer on the second surface of the substrate; providing a first laser in the metal layer to open a plurality of aisle regions and barely exiting a portion of the second surface; and providing - a second laser irradiation 201126747 in the metal layer aisle A portion of the second surface exposed is formed to form a plurality of concentrating regions within the substrate. [Embodiment] The present invention discloses a light-emitting element, and more particularly to a light-emitting element for performing two-substrate cutting and a method of making the same. In order to make the description of the present invention more detailed and complete, please refer to the following description and the drawings of Figures 3A to 3K. The proportions of the layers in the figures are only schematic and are not enlarged according to the actual size. 3A to 3K are schematic views showing the structure of the manufacturing process of the present invention. As shown in FIG. 3, a substrate 3 is provided, wherein the substrate 3 includes a first surface 304 and a second surface 3〇2, wherein the first The surface system is opposite to the second surface arc, and as shown in FIG. 3, a plurality of semiconductor crystal layers 31 are formed on the first surface 3〇4 of the substrate 30, wherein the semiconductor crystal layer 31 is from bottom to top. At least a first conductive type semiconductor layer 310, an active layer 312, and a second conductive type semiconductor layer 314 are included. After the smear, as shown in FIG. 3C, the lithographic side layer 31' of the above-mentioned semiconductor worm layer 31' is used to form the light-emitting layer 32 of the plurality of mesa structures. Each of the - the money layer ^ is exposed to the first portion - the conductive semiconductor layer 31 〇. 201126747 The material of the substrate 30 may be a transparent substrate such as sapphire or ZnO, and a sapphire substrate is used in the embodiment; and the light-emitting layer 32 includes a first conductive semiconductor layer from bottom to top. 31〇, the active layer 312 and the second conductive semiconductor layer 314, the material of which comprises one or more substances selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), arsenic (As), and phosphorus (P) A group of nitrogen (N) and bismuth (Si) such as a gallium nitride (GaN) series material or a phosphorous aluminum gallium indium (AlGalnP) series material. Then, as shown in FIG. 3D, an etch-off protection layer 34 is formed on the light-emitting layer 32. In other embodiments, the etch-protection layer 34 can also be overlaid on the light-emitting layer 32 and the substrate 30 at the same time. The material of the above-mentioned surname engraved protective layer 34 may be a material such as sulphur dioxide (si〇2) or nitrite (χ χ). The second surface 302 of the substrate 30 is then polished to a thickness of less than φ 2 μμηη and a metal layer 5 is formed on the second surface 302 of the substrate 30. After the display, as shown in FIG. 3E-3F, a first laser is provided, and a laser beam having an energy of less than 1.5 W and a velocity of more than 40 mm/sec is irradiated to the metal layer 5 〇 to form a plurality of layers on the metal layer 50. The stripe region 36 has a width W1 of about 30-50 μm on the side of the substrate 3 and exposes the second surface 302 of the portion of the substrate 3 . FIG. 3G is a top view of the 3F diagram. As shown in FIG. 3G, in the embodiment of the present invention, the plurality of 201126747 plurality of walkway regions 36 formed by the first laser beam surround the plurality of light-emitting laminates 32. Around it. In one embodiment, the laser beam can be an Nd-YAGUVlaser. In one embodiment, the laser by-products above the aisle zone 36 may then be cleaned with acid, water or gas. In an embodiment, the pass area may be etched at a temperature of 100 to 300 degrees Celsius for about 10 to 5 minutes to remove the by-product of the laser. In this embodiment, preferably The operating conditions are in the temperature range of 150 to 250 degrees Celsius, and the concentration ratio of the sulfuric acid field 2 is 4) to the concentration of tannic acid (H3P〇4) is 3 to 1 and the engraving liquid is about 2 to 4 minutes. In other embodiments, the etching solution may also be a phosphoric acid solution; in other embodiments, it may be cleaned with nitrogen or water. Thereafter, as shown in FIG. 3H, a second laser is provided, with a laser energy of 0.05 to 0.35 W, a speed of 1 〇〇 to 6 〇〇 mm/sec, and a focal length of a laser of 30-60 μm from the substrate. The light beam illuminates the second surface 3〇2 of the substrate 30, so that the second laser 70 is focused on the inside of the substrate 30, and a plurality of concentrating regions 37 are formed inside the substrate, so that the surface of the substrate 30 is not damaged, and the light absorption can be reduced. effect. The length L2 of the concentrating zone may be about 1 (Μ(Κ) μιη, the width W2 may be less than 5 μm, and the shape of the concentrating zone may be a K-dots, a rectangular parallelepiped or other pattern. In an embodiment, the laser The beam can be an infrared or green laser, such as Nd-YAG frequency femt〇-Second or pic〇_sec〇nd, Nd Y^201126747 laser, Nd-YLF laser or titanium sapphire laser (titanium laser) 〇 Finally, as shown in Fig. 31, the first surface 3〇4 of the substrate 30 is split to form a plurality of light-emitting elements 300. Moreover, as shown in Fig. 3J, at least before the splitting, at least A transparent conductive oxide (Transistent Q) nductive Oxide (TCO) layer 38 is formed on the light emitting layer 32 and after at least one electrode 4 is disposed on the transparent conductive oxide layer 38, and then the first surface 3〇4 of the substrate 30 is cleaved to form A plurality of light-emitting elements 300. In one embodiment, as shown in the circle 3K, a groove 9 is formed before the first surface 304 of the substrate 30, and then split to form a plurality of light-emitting elements 3A. The material of the transparent conductive oxide layer 38 is selected from the group consisting of one or more materials selected from the group consisting of oxysulphur TG, oxygen brain _, Weixiang 〇 〇, cadmium tin oxide (CT0), antimony tin oxide (ΑΤ0), and oxidation. A group consisting of bismuth zinc (Αζ〇) and oxidized (10)). In the present invention - the first laser 60 and the second laser 70 may be integrated into the same laser, and the second and second lasers 70 may be non-laser wires. Describe and cooperate with the drawings from Fig. 5 to Fig. 5C. Figure 4 shows the structure and process of the laser system. As shown in Fig. 4, in the process of making the above third drawing, the first surface of the substrate is placed on the first platform 4G1 downwards 201126747' Make Jinlang 50 exposed. Then, according to the above process, the metal layer % is irradiated with the first laser 60, the reduced aisle region 36 is formed on the metal layer %, and a part of the second surface 3〇2 of the substrate is exposed, and then the second The laser 7G illuminates the exposed second surface 302' of the substrate 3() to form a plurality of concentrating regions 37 inside the substrate 3G. In an embodiment, it may also be on the first platform 4 before illuminating the second laser 7G.
清洗走道區36上之雷射副產物。在另—實施财，也可在 第-平台401上以酸液、水或氣體清洗走道區％上之雷射 副產物的同時進行第二雷射7〇之照射。 在另-實施例中，第5A_5C圖為雷射系統結構與製程示 意圖’如帛5A圖所示，在製作上述第3E圖之製程時，將基 板之第一表面304向下擺放於第一平台5〇1之上，而使金屬 層50露出。之後依上述製程’先以第一雷射6〇照射金屬層 50 ’於金屬層50之上形成複數條走道區36，並使基板3〇之 部份第二表面302裸露出來之後，將基板傳送至第二平台5〇2 再以第二雷射70照射基板30之裸露第二表面3〇2，而在基 板30内部形成複數個聚光區37。如第5C圖所示，在一實施 例中，也可在照射第一雷射60之後，先將基板3〇傳送至第 三平台503上以清洗劑80，如酸液、水或氣體清洗走道區 201126747 36上之雷射副產物。之後，再將基板30傳送至第二平台502 上進行第二雷射70之照射。 以上所述之實施例僅係為說明本發明之技術思想及特 點，其目的在使發明技術所屬領域中具有通常知識者能夠瞭 解本發明之内容並據以實施’當;j；能以之限定本發明之專利 範圍，即大凡依本發明所揭示之精神所作之解變化或修 飾，仍應涵蓋在本發明之專利範圍内。 乂 【圖式簡單說明】 第1圖為習知之發光元件結構示意圖。 第2圖為習知之發絲置結構示意圖。 第3A圖至第3K圖為本 • 第4圖為雷射系統結構與製程示意圖 第5A-5C圖為雷射系統結構與製程示意圖 10透明基板 14 電極 122活性層 【主要元件符號說明】 100發光元件 12 半導體疊層 120第一導電型半導體層 201126747The laser by-products on the walkway area 36 are cleaned. Alternatively, the second laser 7 ray may be irradiated while cleaning the laser by-product on the first platform 401 with acid, water or gas. In another embodiment, FIG. 5A_5C is a schematic diagram of the structure and process of the laser system. As shown in FIG. 5A, in the process of fabricating the above FIG. 3E, the first surface 304 of the substrate is placed down on the first. Above the platform 5〇1, the metal layer 50 is exposed. Then, according to the above process, a plurality of aisle regions 36 are formed on the metal layer 50 by irradiating the metal layer 50' with the first laser 6 ,, and a part of the second surface 302 of the substrate 3 is exposed, and then the substrate is transferred. To the second stage 5〇2, the exposed second surface 3〇2 of the substrate 30 is irradiated with the second laser 70, and a plurality of light collecting regions 37 are formed inside the substrate 30. As shown in FIG. 5C, in an embodiment, after the first laser 60 is irradiated, the substrate 3 is transferred to the third stage 503 to clean the aisle, such as acid, water or gas. Laser by-product on Zone 201126747 36. Thereafter, the substrate 30 is transferred to the second stage 502 for illumination of the second laser 70. The embodiments described above are merely illustrative of the technical spirit and characteristics of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement 'when; j; The scope of the invention, that is, the variations or modifications made by the spirit of the invention, should be covered by the scope of the invention.乂 [Simplified description of the drawing] Fig. 1 is a schematic view showing the structure of a conventional light-emitting element. Figure 2 is a schematic view of a conventional hairline structure. Fig. 3A to Fig. 3K are the same. Fig. 4 is a schematic diagram of the structure and process of the laser system. Fig. 5A-5C is a schematic diagram of the structure and process of the laser system. 10 Transparent substrate 14 Active layer of electrode 122 [Description of main components] 100 illuminating Element 12 semiconductor laminate 120 first conductive semiconductor layer 201126747
124 第二導電型半導體層 200 20 次載體 202 22 焊料 24 30 基板 302 304 第一表面 32 310 第一導電型半導體層 312 314 第二導電型半導體層 36 37 聚光區 60 70 第二雷射 300 38 透明導電氧化層 40 90 凹溝 400 401 第一平台 500 501 第一平台 502 503 第三平台 80 發光裝置 電路 電性連接結構 第二表面 發光疊層 活性層 走道區 第一雷射 發光元件 電極 雷射系統 雷射系統 第二平台 清洗劑124 second conductive type semiconductor layer 200 20 times carrier 202 22 solder 24 30 substrate 302 304 first surface 32 310 first conductive type semiconductor layer 312 314 second conductive type semiconductor layer 36 37 light collecting area 60 70 second laser 300 38 transparent conductive oxide layer 40 90 groove 400 401 first platform 500 501 first platform 502 503 third platform 80 light-emitting device circuit electrical connection structure second surface light-emitting layer active layer walkway region first laser light-emitting element electrode Shooting system laser system second platform cleaning agent