201126159 六、發明說明： 【發明所屬之技術領域】 本細錢-種_短時離散錢轉換權檢測設備及方 、曰種可以在線上即時檢測出晶圓裂痕與斷裂所在區段資訊者。 【先前技術】 表面快速發展，使得各種精密力增加，而晶圓 的品f要求，_地日趨精細與嚴格。按，一 =件絲1獻致上可分辆觸式量_雜觸式制，以接觸式 s，傳統之探針式輪顧於測量時容易破壞待測物之表面。再 者^於受騎使狀探針尺相使得制騎度亦 一疋程度的限制。 备斜另、辦接觸心測可以光學方絲量測細物件絲，由於不 .:待麟件成破壞’亦可提供不錯的解析度以及具有即時性的量 則憂點’因2，非接觸式量測6經成為物件表面制駐流趨勢。 依據目⑽知’以光學方式量測制物件表面的糊前案如本國 ^專利公開第2_號『透明基板端面部之檢查裝置及檢查方 第』、發明專利公開第施27321號『缺陷檢查方法』、發明專利公開 200813421琥『表面檢查裝置』、發明專利公開第2〇_4758『表面 ^震置』、發明專利公開第2_1433號『表面檢查裝置』、發明專 々第200741199號『表面檢查裝置及表面檢查方法』以及發明專 利公開第2GG745538『缺陷檢測裝置』等七件專利前案。 ^上述專利前案皆非以短時離散小波轉換技術來檢測物件之表面缺 陷而疋以影像處理比對技術，或是以感光元件所收集的反射訊號來 201126159 曹 判斷反射訊號的絲度分絲敏物件表面是否有缺陷。由於影像斤 理比對技術解讀影像檔案須花費較長時間的緣故，所以必須浪費較: 2時間去比對待測影像與基準影像之_異同，如此方能比對出物件 =陷的部位所在，如此特性其使得影像處理比對技術較無法 步驟相對較快的晶圓生產線上。 农程 光強度的檢測方式軸不須做影像處理，而可加快整體的檢 ’、’、、又’惟’其僅能針對物件表面粗趟度、平滑度做檢测而已，盆無 ^對物件表面之痕包括裂痕_以及魏深度做進—步精確的判、 ^再者’上述專利前案於晶圓檢測時需令生產線停止，再以機械手 曰#將待^II取錢轉平台上進行檢測，藉峻轉平台的轉動角度使 aa圓表面得以被掃跑光線予以掃猫，因而造成檢測時間與工時的增 嚴重影響晶圓製造產線的產出效能。故而上述專利前案確 貫有再改良的必要性。 依據目前所知的短時離散小波轉換技術，主要係翻於影像壓縮 與影像_處理、_經網路或是其他的技術領域上。—般離散小波 # 包括小波分解與小波重建兩個部分，小波分解的步驟係將原 的-雜資料與高度變錄㈣分解成低触細兩種獨立 =^別、波重_部分碰低親號經過低頻合錢波之後的訊 〜”域峨_高頻合舰波之後的訊齡_加整合，即可還 原成原始的訊號. 由於實際硬體架構的緣故，一般離散小波轉換技術多將訊號分段 的區段^定為較為綿密的點來做離散小波轉換，但是實際上應用於線 上即時檢測時’則無法做到點對點的訊號處理，因為需耗費較長的時 間做轉換纽吨得分析絲。惟，其分婉果無法做為自動辨識之 201126159 用’因此，一般研究所提出離散小波轉換技術皆無法用於線上即時的 晶圓檢測領域上。倘若勉強應用的話’其結果通常會與震動引起之噪 音混淆，反而無法辨識。更何況人眼的視野無法察覺單晶或多晶太陽 能晶圓中所包含之微裂痕所在’而且晶圓微裂痕會隨著製程的流程以 及模組安裝後繼續蔓延，而此一缺陷則會導致功率上的損失。 【發明内容】 本發明之第一目的在於提供一種可以改善前述習用結構缺失的 _應用短時離散小波轉換之晶圓檢測設備及方法，主要係將光電轉換與 離散小波轉換技;術做一結合，以應用在線上即時晶圓缺陷檢測的用途 上，不僅可以避免使用影像處理而可減少計算複雜度以及降低系統反 應所需時間，並可進一步量測出晶圓裂痕深度甚至斷裂處，進而減少 人工檢驗以及重製，因而具有非接觸、高靈敏度、解析度高、改善生 產模組可靠度與使用期限、不需將訊號重建以及做頻域轉換等特點。 為達成上述功效，本發明採用之技術手段係包括一跨設手段、一 光學掃晦裝置、-感光元件及一離散小波轉換手段，跨設手段可跨設 _在生產線的二侧緣上’光學掃瞒裝置設在跨設手段之第一供設部上， 用以對生產線上之晶圓發出掃瞄光線，感光元件設在跨設手段之第二 供3又部上，用以接收由晶圓表面反射的掃瞄光線，並轉換為至少一串 的電壓机號’並以離散小波轉換手段將該串電壓訊號訊號區分成複數 個同長度的區段’並賴串電壓訊號之每_區段做離散小波轉換，而 可於每-區段取得一低頻係數與一高頻係數，並對每一低頻係數與高 頻係數做區段能量的計算分析，當其中至少—區段能量驟降時，則可 判斷出該晶圓之裂痕或斷裂所在的區段資訊者。 201126159 本發明之g _目的在於提供-種可以直接將晶圓檢酿備架設於 生產線上而可於生產線運作的同時進行晶圓檢測，不僅不會景》響晶 圓製造產線的產纽能，並可加快晶圓缺陷檢測速度，進而提升晶圓 產能以及產品良率’而且可以省略旋轉平台的設置，進而避免機械手 臂於搬運過程對晶圓所致的外力損壞，以達卿省生產成本之目的。 為達成上述功效’本發明採用之技術手段係將第一供設部與第二 供6又部以刖制财式跨設在生產狀二職的平面上，俾使掃猫光 線射出方向與生產線行進方向為相反朝向者。 【實施方式】 壹•本發明之基本技術特徵 1.1本發明應用原理 請配合參看第一至三圖所示’本發明主要應用於晶圓（40)的製造 產線上，以對生產線(41)上之晶圓（4〇)表面進行缺陷檢測，主要是擷 取掃瞄光線之反射訊號中所包含高頻暫態及低頻變化，並配合即時訊 號處理技巧近一步衍生出本發明之訊號處理核心的短時離散小波轉換 手段(30)(Short Time Discrete Wavelet Transform，STDWT)。本發 明應用原理是將由晶圓（40)表面反射的掃瞄光線轉換成電壓訊號，並 將電壓訊號分解成複數個同長度的區段，以進行短時離散小波轉換， 由於本發明不需將電壓訊號做重組處理，所以可以加快運算的速度， 而可對生產線(；41)上的晶圓（40)做即時的缺陷檢測，因此，可針對具 微裂痕甚至斷裂的晶圓（40)加以辨識。再者，本發明能夠進一步確認 微裂痕深度或是斷裂長度，而離散小波轉換特殊的地方在於對訊號變 化具有快速劇烈響應的特性，能夠輕易地辨別訊號中的微弱突變。 1.2本發明基本技術特徵 201126159 吻配口參看第-至二圖所示，為H力效，本發明基 徵包括設備與方法的技術特徵，主要係包括—跨設手段⑽、—光學 掃畴置⑽、—感光树⑽及—離散小波轉換手細），此跨： 手段⑽可供跨設在絲輸送制晶圓⑽的生產線⑹上此跨設 手段⑽包含-第—供設部⑸）及—與第—供設部⑼相對朝向的第又 -供設部(52)，而光學掃猫裝置⑽係設在跨設手段⑽之第一供設 WK51)上’以對生產線⑷）上之晶圓⑽)發崎猫光線；另，感光元 件⑽設在第二供設部⑽上，以無由晶_)表面反射的掃猫光 線，並將掃瞄光線轉換為至少一串的電壓訊號。 …再請配合參看第六圖所#，再以離散小波轉換手段⑽將該串電 壓訊號訊號區分成複數個同長度的區段，並對該串電壓訊號之每一區 段做離散小波轉換，而可於每—區段取得—低頻係數與—高頻係數， 並對每-低頻係數與高頻係數做區段能量的計算分析，#其中至少一 區Mb量驟降時’則可判斷出晶圓⑽）之裂痕或斷裂所在的區段資 訊，以供後續處理應用。201126159 VI. Description of the invention: [Technical field of invention] This fine money-species short-term discrete money conversion right detection device and the other types of information can be detected on the line immediately on the spot where the cracks and breaks occur. [Prior Art] The rapid development of the surface has led to an increase in various precision forces, and the demand for wafers has become increasingly fine and strict. Press, of wire 1 can be divided into the amount of contact can be divided into the type of contact styling, to contact s, the traditional probe type wheel is easy to damage the surface of the object under test. Furthermore, the riding of the probe-like probe makes the riding degree also limited. The other side of the slanting and measuring can be used to measure the fine object wire by the optical square wire. Because it is not: the lining of the lining is broken, it can also provide a good resolution and the amount of immediacy is worrying because of 2, non-contact The type measurement 6 becomes the trend of the surface of the object. According to the item (10), it is known that the surface of the object is optically measured. For example, the domestic patent publication No. 2_ "Inspection device and inspection side of the transparent substrate end face", Invention Patent Publication No. 27321 "Defect inspection Method, invention patent publication 200813421 a "surface inspection device", invention patent publication 2nd _4758 "surface surface vibration", invention patent publication 2_1433 "surface inspection device", invention specials 200741199 "surface inspection Seven patents for the device and surface inspection method and the invention patent disclosure No. 2 GG745538 "Defect detection device". ^The above patents are not based on the short-time discrete wavelet transform technology to detect the surface defects of the object, or the image processing comparison technology, or the reflection signal collected by the photosensitive element to 201126159 Cao judgment reflection signal wire division Whether the surface of the sensitive object is defective. Since the image manipulation method takes a long time to interpret the image file, it must be wasted: 2 time to compare the difference between the image to be measured and the reference image, so that the object can be compared with the object. Such a feature makes image processing more difficult than a relatively fast step on a wafer line. The detection method of the intensity of the agricultural light intensity does not need to be image processing, but can speed up the overall inspection ', ', and 'only'. It can only detect the roughness and smoothness of the surface of the object. The marks on the surface of the object include cracks _ and Wei depth to advance - accurate judgment, ^ and then 'the above patents need to stop the production line during wafer inspection, and then use the robot 曰# to take the money to the platform The detection is carried out, and the rotation angle of the platform is rotated to sweep the aa round surface to sweep the cat, thereby causing the detection time and the increase of working hours to seriously affect the output performance of the wafer manufacturing line. Therefore, the above patent case has the necessity of further improvement. According to the short-term discrete wavelet transform technology known at present, it mainly focuses on image compression and image processing, _ via the network or other technical fields. The general discrete wavelet# includes two parts: wavelet decomposition and wavelet reconstruction. The steps of wavelet decomposition are to decompose the original-heterogeneous data and the high-allocation (4) into low-touch and two independent =^,,,,,,,,,,, After the low frequency and the money wave, the signal will be restored to the original signal after the integration of the domain _ _ high frequency combined ship wave. Due to the actual hardware architecture, the general discrete wavelet transform technology will be more The segment of the signal segment is set to a relatively dense point for discrete wavelet conversion, but in fact, when applied to online instant detection, 'the point-to-point signal processing cannot be done because it takes a long time to convert the new ton. Analysis of the wire. However, the results cannot be used as the automatic identification of 201126159. Therefore, the general research suggests that the discrete wavelet transform technology can not be used in the field of online wafer inspection. If it is barely applied, the result will usually Confused with the noise caused by vibration, but it is not recognizable. Moreover, the human eye's field of view cannot detect the micro-cracks contained in single-crystal or polycrystalline solar wafers. The crack will continue to spread with the process of the process and after the module is installed, and this defect will result in loss of power. SUMMARY OF THE INVENTION A first object of the present invention is to provide a short application that can improve the aforementioned conventional structure. The wafer detecting apparatus and method for discrete wavelet transform mainly adopts photoelectric conversion and discrete wavelet transform technology; the combination of the techniques for applying the on-line instant wafer defect detection can not only avoid the use of image processing but can reduce Calculate the complexity and reduce the time required for system reaction, and further measure the crack depth or even the fracture of the wafer, thereby reducing manual inspection and re-manufacturing, thus providing non-contact, high sensitivity, high resolution, and improved production module reliability. In order to achieve the above effects, the technical means adopted by the present invention include a straddle means, an optical broom device, a photosensitive element and a discrete wavelet transform. Means, the means of arranging across the _ on the two side edges of the production line 'optical broom device is set across the The first supply part of the means is for emitting scanning light to the wafer on the production line, and the photosensitive element is disposed on the second portion of the traversing means for receiving the scanning light reflected by the surface of the wafer And converted into at least one string of voltage machine number ' and discrete wavelet transform means to divide the string voltage signal into a plurality of segments of the same length' and perform discrete wavelet conversion for each segment of the string voltage signal, and A low frequency coefficient and a high frequency coefficient can be obtained in each section, and the calculation and analysis of the section energy of each low frequency coefficient and high frequency coefficient can be performed. When at least the section energy dips, the current frequency can be determined. The information of the segment where the crack or break of the wafer is located. 201126159 The purpose of the invention is to provide a kind of wafer inspection which can be directly mounted on the production line and can be used for wafer inspection while the production line is operating, not only "View" sounds the production capacity of the wafer manufacturing line, and can speed up the detection of wafer defects, thereby increasing the wafer throughput and product yield' and omitting the setting of the rotating platform, thereby avoiding the robotic arm The external force damage caused by the wafer during the handling process is aimed at the production cost of Daqing. In order to achieve the above-mentioned effects, the technical means adopted by the present invention is to set the first supply part and the second supply part and the second part to be placed on the plane of the second position of production, so that the direction of the scanning light and the production line of the cat are transmitted. The direction of travel is the opposite direction. [Embodiment] 基本• The basic technical features of the present invention 1.1 The application principle of the present invention, please refer to the first to third figures. The present invention is mainly applied to the manufacturing line of the wafer (40) to the production line (41). Defect detection on the surface of the wafer (4〇), mainly to capture the high-frequency transient and low-frequency changes contained in the reflected signal of the scanning light, and further extract the signal processing core of the present invention with the instant signal processing technique. Short Time Discrete Wavelet Transform (30) (Short Time Discrete Wavelet Transform, STDWT). The application principle of the invention is to convert the scanning light reflected by the surface of the wafer (40) into a voltage signal, and decompose the voltage signal into a plurality of segments of the same length for short-time discrete wavelet transform, since the invention does not need to The voltage signal is reorganized, so the speed of the operation can be speeded up, and the wafer (40) on the production line (; 41) can be immediately detected for defects, so that the wafer (40) with micro-cracks or even breaks can be applied. Identification. Furthermore, the present invention can further confirm the microcrack depth or the length of the break, and the special feature of the discrete wavelet transform is that it has a fast and violent response to the signal change, and can easily distinguish the weak mutation in the signal. 1.2 Basic technical features of the present invention 201126159 Kiss fittings are shown in Figures 1-2, which are H-effects. The basic features of the invention include the technical features of the device and method, mainly including - erecting means (10), - optical sweeping (10), - Photosensitive tree (10) and - Discrete wavelet transform hand thin), the span: means (10) can be placed across the production line (6) of the wire transport wafer (10), the straddle means (10) includes - the - supply part (5)) - a second-providing portion (52) opposite to the first supply portion (9), and the optical sweeping device (10) is disposed on the first supply WK51 of the straddle means (10) on the production line (4) Wafer (10)) hairpin hair; in addition, the photosensitive element (10) is disposed on the second supply portion (10) to sweep the cat light without the surface of the crystal, and convert the scanning light into at least one string of voltage signals . ...and please refer to the sixth figure #, and then use the discrete wavelet transform means (10) to divide the string voltage signal into a plurality of segments of the same length, and perform discrete wavelet transform on each segment of the string voltage signal. However, the low-frequency coefficient and the high-frequency coefficient can be obtained in each segment, and the calculation and analysis of the energy of each segment of the low-frequency coefficient and the high-frequency coefficient are performed, and #% of the Mb in the region is suddenly decreased. Information on the segment where the wafer (10) is cracked or broken for subsequent processing applications.
貳 •本發明技術特徵之具體實施 2.1光學掃瞄裝置 清參看第-圖所示’本發明所採用的光學掃猫裝置(1〇)包括一用 以發出-魏光束的雷射產生H(11)，以及至少—用以使雷射光束成 為可供掃瞄之掃瞄光線的光學組件〇2)。光學組件（12)的一種可行實 施例，係包括一使雷射光束轉換成掃瞄光線的狹縫元件（12〇)、一用以 將掃瞄光線反射至待測物件Go)的反射鏡(121)及一透鏡(122)。 2· 2離散小波轉換手段 201126159 ’ ❼看第四圖及第五圖所示，離散小波轉換手段(30)係為本 發明訊號分析轉換處理的核心技術特徵，於一種實施例中，離散小波 轉換手段⑽可以雙值遽波器組(Dyadic Filter Banks)之方式來建構離 政j波轉換的^重分析架構。上述雙值丨m组所娜之電壓訊號， 係使用-組低賴波_]及—_其正錢高職波料】分解成兩 組頻寬不同的訊號’且由低通滤波器⑻別後的分支，並使用同一型 3亥低通遽波器/ψ]再重覆處理複數次。 # 請參看第一'四圖及第五圖所示，上述具體實施例中，可以6組 同-型低mn/ψ]重覆處理六:欠，以取料六階層之低頻係數 (cA6)，並由高通濾波器4]取得第一階層之高頻係數以^。 離散小波轉換手段(30)可以内建之Matlab或是c++軟體模組對該 第-階層之高頻係數cDl及第六階層之低頻係數(cA6)進行區段能量 的分析。其中，離散小波轉換手段(3〇)可用包含-内建有該Matlab或 是C++軟體模組的電腦（本圖示例中未示）或是一微處理器，並以電腦 鲁（本圖示例中未示）或是微處理器對第—階層之高頻係數cm及第六階 層之低頻係數(cA6)進行能量區段分析，以辨別訊號中的微弱突變。 另一方面，離散小波轉換手段(3〇)將由感光元件（2〇)所收集到之 電壓§fl號置於至少一緩衝區，並將電壓訊號内之資料串列加以分段為 複數個同長度的區段’並對緩衝區之每-區段之電壓訊號施以離散小 波轉換處理，且離散小波轉換手段(30)依據一窗函數來取得所需的區 段長度，以決定掃瞄解析度的大小，而離散小波轉換手段與窗函 數之具體實施例，係採用有限脈衝響應濾波器來達成上述功效；另， 201126159 •緩衝區之具體實施例可以是哺於電腦或是微處理器的緩衝記憶體。 凊參看第六騎示，其係為本發明離散小波轉齡段⑽的處理 步驟流程，首先將感光元件⑽)所擷取之電壓職付分隔成同長度 區段，並對各區段之電壓訊號進行離散小波轉換，以取得低頻係數_ 及高頻係數cD卜再對低頻係數cA6及高頻係數cD1進行能量區段的 計算分析，同時判斷高頻即時緩衝資料區Di的數值是否大於等於前— 個緩衝資料區Di-Ι乘以α的數值，再判斷低頻即時緩衝資料區Ai乘 春以〇· 9是否大於等於後一個緩衝資料區Ai+1的數值，是，則輸出一 能量驟降訊號，並判斷低頻即時緩衝資料區Ai是否小於等於後一個緩 衝資料區Ai+Ι乘以〇. 9的數值，是，則輸出一能量恢復訊號。其中， 能量驟降訊號與能量恢復訊號可做為晶圓⑽)缺陷警報裝置的觸發訊 號，藉以通報線上工作人員前往察看，而可進—步後續的處理因應。 2. 3感光元件 «月參看第-至二圖所示’本發明感光元件(2〇)係用以將反射之掃 籲瞒絲相收集域-村供轉換分_賴訊號，其具體實施例可 以是光學探針陣列、電荷麵合元件CCD、互補式金屬氧化層半導體 或是位置感測器PSD。 2.4跨設手段 4參看第二、三圖所示，本發明為使檢測設備可以直接架設於晶 圓（40)生產線(41)上，以於生產線(41)運作的同時進行晶圓⑽）的檢 測作業，本發明跨設手段(5G)係跨設在生產線⑷）長度延伸之二側緣 的平面上’且跨設手段⑼)具有-貫穿第—供設部⑸）與第二供設部 201126159 -(52)以供生產線(41)及其上之該晶圓（40)通過的穿口（53)。於一種具 體實施例中，第一供設部（51)與第二供設部（52)可以是分體方式設 置，使第一供設部（51)與第二供設部（52)以前後間隔方式跨設在生產 線(41)之二側緣的平面上。其中，上述平面是指地面或是生產線(41) 固定不動的邊面部分而言。 上述具體實施例中，第一供設部（51)的可行實施例可以是第一跨 架，第一供設部(52)則為第二跨架，第一跨架與第二跨架各自具二個 鲁向上延伸的柱體(54)及一跨接在該二柱體(54)頂部的跨接體(55)，第 一跨架之跨接體(55)可供該光學掃瞄裝置（10)設置，第二跨架之跨接 體(55)則可供感光元件（2〇)設置。 請參看第二、三圖所示，且為掌控晶圓（4〇)位置而可以精確的時 點來啟動光學掃瞄裝置（1〇)之目的，本發明跨設手段(5〇)設有一與光 學掃0¾農置（10)電連接的距離感測模組(6〇)，用以感測生產線(Μ)上 接近跨設手段(50)的晶圓（40)位置，藉以控制光學掃瞄裝置（1〇)發出 鲁掃瞄光線的時機。其中，上述距離感測模組(6〇)的具體實施例可以是 一般市售的紅外線距離感測器，或是雷射式離感測器，此距離感測器 係用以發射一訊號入射晶圓（4〇)並反射至紅外線距離感測器中，並可 對訊號入射及反射時間進行判斷，當訊號入射及反射時間達到預設值 時，則產生一驅動訊號啟動光學掃瞄襞置（1〇)來發出掃瞄光線。 請參看第二、三圖所示，為省略精簡旋轉平台設置以及縮短檢測 時間，以達到降低生產成本與縮短工時之目的，本發明掃瞄光線射出 方向與生產線(41)行進方向為相反朝向，因此，本發明可以利用生產 201126159 、’嫩。)輸达aa®(4G)則進時，以光學掃岐置⑽發出掃猫光線掃猫 至晶圓⑽的前緣，隨著晶圓⑽不斷前進，使娜光線得以由前往 後逐-掃CD⑽’如此即可達到不需旋轉平台及停止生產線⑹ 運作的情況下進行晶圓（40)的線上檢測作業。 參·本發明應用原理及公式推導 連、戈j波轉換小波函數與欲處理訊號之關聯性計算，以下為小 波函數之定義如下式： % ψαΛί) = ~~ψ(!^±) 連、只j波轉換則為-遞迴式函心而小波方程式〜的定義式為： ψ 满 a、 (2) «:倍數係數’ &位移係數，連續小波轉換係數㈣定義為： C(a,b)~ \/{ί)ψ\^{ί)άί (3) /(0為電壓訊號，在⑵式中’^和6都是實數或連續。其離散型式為、具体•Detailed Implementation of the Technical Features of the Invention 2.1 Optical Scanning Device Clearly, the optical scanning device (1〇) used in the present invention includes a laser for emitting a -wei beam to generate H (11). ), and at least - an optical component 用以 2) for making the laser beam a scanable light for scanning. A possible embodiment of the optical component (12) includes a slit element (12〇) for converting the laser beam into the scanning light, and a mirror for reflecting the scanning light to the object to be tested (Go) 121) and a lens (122). 2· 2 discrete wavelet transform means 201126159 ' As seen in the fourth and fifth figures, the discrete wavelet transform means (30) is the core technical feature of the signal analysis conversion process of the present invention. In one embodiment, the discrete wavelet transform Means (10) can construct a re-analysis framework for the j-wave transformation of the government by means of the Dyadic Filter Banks. The voltage signal of the above-mentioned two-valued group 所m group is decomposed into two sets of signals with different bandwidths using the low-wave _] and -_ _ _ _ _ _ _ _ _ _ _ _ _ After the branch, and using the same type of 3 Hai low pass chopper / ψ] and repeated processing multiple times. # Please refer to the first 'fourth and fifth diagrams. In the above specific embodiment, six groups of the same type-low mn/ψ] can be repeatedly processed six: owed to take the six-level low-frequency coefficient (cA6) And the high-frequency coefficient of the first level is obtained by the high-pass filter 4]. The discrete wavelet transform means (30) can analyze the segment energy of the first-level high-frequency coefficient cD1 and the sixth-level low-frequency coefficient (cA6) by a built-in Matlab or c++ software module. Among them, the discrete wavelet transform means (3〇) can be included with a built-in computer with the Matlab or C++ software module (not shown in the example) or a microprocessor, and the computer is Lu (this illustration In the example, the microprocessor or the microprocessor analyzes the energy segment of the first-order high-frequency coefficient cm and the sixth-level low-frequency coefficient (cA6) to identify weak mutations in the signal. On the other hand, the discrete wavelet transform means (3〇) places the voltage §fl collected by the photosensitive element (2〇) in at least one buffer, and segments the data in the voltage signal into a plurality of the same The length segment 'and the discrete signal conversion process is applied to the voltage signal of each segment of the buffer, and the discrete wavelet transform means (30) obtains the required segment length according to a window function to determine the scan resolution. The size of the degree, and the specific embodiment of the discrete wavelet transform means and the window function, the finite impulse response filter is used to achieve the above effects; another, 201126159 • The specific embodiment of the buffer can be fed to a computer or a microprocessor Buffer memory. Referring to the sixth riding diagram, which is the processing procedure flow of the discrete wavelet age-old segment (10) of the present invention, firstly, the voltage service taken by the photosensitive element (10) is divided into the same length section, and the voltage of each section is The signal is subjected to discrete wavelet transform to obtain the low frequency coefficient _ and the high frequency coefficient cD, and then the energy section of the low frequency coefficient cA6 and the high frequency coefficient cD1 is calculated and analyzed, and at the same time, it is judged whether the value of the high frequency immediate buffer data area Di is greater than or equal to — The buffer data area Di-Ι is multiplied by the value of α, and then judge whether the low-frequency instant buffer data area Ai is multiplied by spring 〇·9 is greater than or equal to the value of the next buffer data area Ai+1, and then, an energy dip is output. Signal, and determine whether the low-frequency instant buffer data area Ai is less than or equal to the latter buffer data area Ai+Ι multiplied by the value of 〇.9, then, an energy recovery signal is output. The energy dip signal and the energy recovery signal can be used as the trigger signal of the wafer (10) defect alarm device, so as to inform the online staff to go to the inspection, and the subsequent processing can be followed. 2. 3 photosensitive element «month see the first to the second figure 'the photosensitive element of the invention (2 〇) is used to reflect the reflection of the 瞒 瞒 相 相 - 村 村 村 村 村 村 , , , , , , , It may be an optical probe array, a charge surface mount element CCD, a complementary metal oxide layer semiconductor or a position sensor PSD. 2.4 Intersecting means 4 Referring to the second and third figures, the present invention allows the detecting device to be directly mounted on the wafer (40) production line (41) to perform the wafer (10) while the production line (41) is operating. In the detecting operation, the straddle means (5G) of the present invention is disposed on a plane of the two side edges extending from the length of the production line (4), and the straddle means (9) has a through-supply portion (5) and a second supply portion. 201126159 - (52) for the production line (41) and the through hole (53) through which the wafer (40) passes. In a specific embodiment, the first supply portion (51) and the second supply portion (52) may be disposed in a separate manner such that the first supply portion (51) and the second supply portion (52) are previously The rear spacing pattern spans the plane of the two side edges of the production line (41). Wherein, the above plane refers to the ground or the side portion of the production line (41) which is fixed. In the above specific embodiment, a possible embodiment of the first supply portion (51) may be a first cross frame, and the first supply portion (52) is a second cross frame, and the first cross frame and the second cross frame respectively a column (54) extending in two upward directions and a jumper (55) spanning the top of the two columns (54), the first cross-over bridge (55) is available for the optical scan The device (10) is provided, and the second cross-over bridge (55) is provided for the photosensitive element (2〇). Please refer to the second and third figures, and for the purpose of controlling the position of the wafer (4 〇), the optical scanning device (1 〇) can be activated at a precise time. The straddle device (5 〇) of the present invention is provided with a Optical scanning device (10) electrically connected distance sensing module (6〇) for sensing the position of the wafer (40) on the production line (Μ) close to the erection means (50), thereby controlling the optical scanning The device (1〇) emits the opportunity to scan the light. The specific embodiment of the distance sensing module (6〇) may be a generally commercially available infrared distance sensor or a laser-type proximity sensor, and the distance sensor is configured to emit a signal incident. The wafer (4〇) is reflected into the infrared distance sensor, and the signal incidence and reflection time can be judged. When the signal incident and reflection time reaches a preset value, a driving signal is generated to activate the optical scanning device. (1〇) to emit the scanning light. Please refer to the second and third figures. In order to omit the setting of the reduced rotary platform and shorten the detection time, so as to reduce the production cost and shorten the working time, the scanning light emission direction of the present invention is opposite to the traveling direction of the production line (41). Therefore, the present invention can utilize the production 201126159, 'nen. When the aa® (4G) is delivered, the optical broom (10) sends out the cat's light to sweep the cat to the leading edge of the wafer (10). As the wafer (10) continues to advance, the light is swept away. The CD(10)' can be used to perform on-line inspection of the wafer (40) without rotating the platform and stopping the production line (6). The application principle and formula of the invention derive the correlation between the wavelet function and the signal to be processed. The following is the definition of the wavelet function: % ψαΛί) = ~~ψ(!^±) The j-wave transform is a recursive function and the wavelet equation is defined as: ψ full a, (2) «: multiple coefficient ' & displacement coefficient, continuous wavelet transform coefficient (four) is defined as: C (a, b )~ \/{ί)ψ\^{ί)άί (3) / (0 is the voltage signal, in the formula (2), both '^ and 6 are real or continuous. The discrete type is
⑷ ⑸ α~α。，α〇>1, b = nb0a〇, b0>〇 V離散時域指標，離散時域倍數指標。 (3)式可改寫為： w (t、一nm,(-m J Ψη,.Λ〇 = α〇 Ha〇 t-nb0) 本發明離散式小波轉換之實縣構稱為次㈣親(Subband Filtering)或是偏移樹狀濾波(Dyadic Filtering)。經由將％替換為 2,可以將（5)式重新改寫為如式6 ·· ^W = 2'V[2'y«-^] ^,*[«] = 2 2<^[2-Jn-k] (6) 201126159 . 次頻帶濾波所使用濾波器定義如下： 刷 ’ 高通 decomposition and rec〇nstructi〇n quadrature mirror filters. 咖L· YW:低通 decomposition and rec〇nstructi〇n quadmture mirror filters. 在（6)式中’小波及濾、波器函數的關聯如下： =Σ^[μ-2^¥7-,[«] 春 = Υ,^[η-2^φΜ[η\ (8) 第一級是分析或分解，其函數示於在（9)式。 η di =^S[rt-2k}cJn-x ⑼ n 以下為離散小波轉換之分析（分解）架構示意以數學式來表示： Σ h[n-2k\ ^ h[n-2k] Σ *[«-2*1 C〇X~ \^g[« - 2k] \ V -2k] Xv g[„ _ n) ----------- 其中以及W=cD。和c£)的頻率範圍包含高頻和低頻部分， 使用db 10小波函數。資料緩衝和判斷級用於收集局部的瞬間變化和 低頻成分。 以下為短時小波轉換之基本定義，反射光轉換成賴訊號為咖， 在即時信號處理時電壓訊號須分段至於緩衝區中如下所示： Γ ΓΙ 1 L ^ 1 12 201126159 A ⑻=·ζ-1)}， }φί) \ 〇<«<L-l )， e/se或其他窗函數 而分段後之電壓訊號再以離散數位小波轉換加以處理。 yi(m) = x.(m)w(n~m)i m = 〇i i, 2,... L^{ 之後對每一段短時小波轉換系數計算區間能量。 A = j^(cA(n))2 , D = ^(cD(n))2 n=0 «=〇 在第六圖中，輸入的電壓訊號係以區段作處理，其中^為即時資料 區此"il程必需有卜丨（先則）和i+l(之後）緩衝資料區。資料處理區 大小為80個取樣點。 肆·本發明實施例的運作 請參看第一至三圖所示，本發明係利用晶圓（4〇)之光學反射特 I"生因而採用知描光線來知猫晶圓（40)的表面，不僅可以免除影像處 理的需要，並可減少運算複雜度以降低系統反應速度。短時離散小波 轉換在於將一串訊號分成同長度之區段後，再繼續做離散小波轉換， 計算轉換後之區段能量，由於晶圓（4〇)微裂痕、斷裂處的存在會導致 區段能量劇烈變化(驟降）。此一特性更勝於一般習知技術所採用的影 像訊號處理方式或是所習慣使用的傅立葉或其他轉換處理。 凊參看第一、六圖所示，本發明為提高檢測解析度，故而採用雷 射光源做為掃瞄光線，首先送出連續/脈衝的雷射光束（即掃瞄光線）， 經過線光學組件（12)後，形成掃描光線直接打在晶圓（40)(如太陽能/ 石夕B曰圓）上’遠場距離為基本假設條件，反射光訊號則被感光元件 is 13 . 201126159 •⑽X光學騎_)_後賴成電壓·，再由雜小波轉換手段 (30)將電壓訊號訊號區分成複數烟長度的區段，並對電壓訊號之每 一區段做離散小波轉換，而可於每—區段取得—低頻係數與一高頻係 數，並對每—低頻係數與高頻餘做區段能量的計算分析，當其中至 少一該區段能量騎時，财騎峰晶圓⑽之職靖裂所在的 區段資訊。 ❼看第七圖所71： ’其係献射之獅光線轉換成電壓訊號的曲 #線圖，a部分為正常之電壓訊號曲線，㈣分則表示為能量驟降的電壓 訊號曲線，即表示有微·或是斷__出I再請參看第八圖所 ^其係為電壓訊號經過短時離散小波處理後之區段能量曲線，藉以 计:出各區&的月，其中，8部分則表示能量正常的曲線，匕部分則 表丁此里驟降的曲線。由此得知，在本發明的建構下，微裂痕或是斷 裂所在的區段與正常區段是可以很輕易的被辨識出。 伍·結論 Φ 因此’藉由上述技術特徵建置，本發明確實具有下列特點： 1·本發明主要係將光轉換與離散小波雛技術做—結合，以應 用在線上即時晶18檢測的用途上，不僅可以避免使祕像處理而可減 少計算複雜度錢降低纽反應所需_，並可進—步量測出晶圓裂 痕冰度甚至斷裂處，進而減少人工檢驗以及重製，因而具有非接觸、 南錄度、解析度高、改善生產模組可靠度與使用期限、不需將訊號 重建以及做頻域轉換等特點。 。， 2.本發明可以直接將晶圓檢測設備架設於生產線上，而可於生產 201126159 • $運作的啊進行晶圓檢測，不鮮會影響晶隨造產線的產出效 月匕’ f可加快晶圓缺陷檢測速度’進而提升晶®產能以及產品良率， 、省略％轉平台的設置，進而避免機械手臂於搬運過程對晶圓 所致的外力損壞，以達到節省生產成本之目的。 以上所述’僅為本發明之一可行實施例，並非用以限定本發明之 專利範圍/L舉依據下财請專嫌騎述之内容、特徵以及其精神 而為之其他變化料效實施，皆應包含於本發明之專利細内。本發 #明^方法及其機構，除上述優點外，並深具產業之利用性，可有效改 善習用所產生之缺失’而且所具體界定於申請補範圍之舰，未見 於同類物。。’故而具實用性與進步性，已符合發明專利要件，麦依法 具文提出申請，謹請釣局依法核予專利，以維護本申請人合法之權 盈。 【圖式簡單說明】 第一圖係本發明之基本架構示意圖。 ❿第二圖係本發爾±即時檢測之動作示意圖。 第三圖係本發明線上即時檢測之另—動作示意圖。 第四圖係本發明雙值濾波器組之電路示意圖。 第五圖係本發_散小波轉換之多重解析架構示意圖。 第六圖係本發_散小波賴手段之流赌制示意圖。 第七圖係本發明電壓曲線對照之示意圖。 第八圖係本發明經離散小波轉換後之能量曲龍示意圖。 【主要元件符號說明】(4) (5) α~α. , α〇>1, b = nb0a〇, b0>〇 V discrete time domain indicators, discrete time domain multiples. The equation (3) can be rewritten as: w (t, one nm, (-m J Ψη, .Λ〇 = α〇Ha〇t-nb0) The discrete wavelet transform of the present invention is called the sub-fourth pro (Subband) Filtering) or Dyadic Filtering. By replacing % with 2, you can rewrite (5) to Equation 6 ·· ^W = 2'V[2'y«-^] ^ , *[«] = 2 2<^[2-Jn-k] (6) 201126159 . The filters used for sub-band filtering are defined as follows: Brush ' Qualcomm decomposition and rec〇nstructi〇n quadrature mirror filters. Coffee L· YW : low-pass decomposition and rec〇nstructi〇n quadmture mirror filters. In (6), the relationship between 'wavelet and filter and wave function' is as follows: =Σ^[μ-2^¥7-,[«] Spring = Υ ,^[η-2^φΜ[η\ (8) The first stage is analysis or decomposition, and its function is shown in (9). η di =^S[rt-2k}cJn-x (9) n The analysis (decomposition) of wavelet transform is shown by mathematical formula: Σ h[n-2k\ ^ h[n-2k] Σ *[«-2*1 C〇X~ \^g[« - 2k] \ V -2k] Xv g[„ _ n) ----------- where the frequency range of W=cD and c£) contains the high frequency and low frequency parts, using the db 10 wavelet function The data buffering and judgment level is used to collect local instantaneous changes and low-frequency components. The following is the basic definition of short-term wavelet transform. The reflected light is converted into a ray signal. In the instant signal processing, the voltage signal must be segmented into the buffer. As shown below: Γ ΓΙ 1 L ^ 1 12 201126159 A (8)=·ζ-1)}, }φί) \ 〇<«<Ll ), e/se or other window function and segmented voltage signal again It is processed by discrete digital wavelet transform. yi(m) = x.(m)w(n~m)im = 〇ii, 2,... L^{ Then calculate the interval energy for each short-wavelet transform coefficient. A = j^(cA(n))2 , D = ^(cD(n))2 n=0 «=〇 In the sixth figure, the input voltage signal is processed in segments, where ^ is the real-time data. The area of this "il must have a buffer (preceding) and i + l (after) buffer data area. The data processing area size is 80 sampling points. 肆 · The operation of the embodiment of the invention, please refer to the first to third As shown, the present invention utilizes the optical reflection of the wafer (4 〇) and thus uses the known light to know the surface of the cat wafer (40), which not only eliminates the need for image processing. It can reduce the computational complexity of the system to reduce the reaction rate. The short-time discrete wavelet transform consists of dividing a series of signals into segments of the same length, and then performing discrete wavelet transform to calculate the energy of the converted segment. The wafer (4〇) micro-cracks and the presence of the break will cause the region. The energy of the segment changes drastically (sudden). This feature is better than the image signal processing method used in the conventional technology or the Fourier or other conversion processing that is accustomed to use.凊 Referring to the first and sixth figures, in order to improve the detection resolution, the laser light source is used as the scanning light, and the continuous/pulsed laser beam (ie, the scanning light) is first sent through the line optical component ( 12) After the formation of the scanning light directly on the wafer (40) (such as solar / Shi Xi B曰 circle) 'far field distance is the basic assumption, the reflected light signal is the photosensitive element is 13 . 201126159 • (10) X optical ride After _)_ depends on the voltage, and then the wavelet signal conversion means (30) divides the voltage signal signal into segments of complex smoke length, and performs discrete wavelet transform on each segment of the voltage signal, and Section acquisition - low frequency coefficient and a high frequency coefficient, and calculation and analysis of each low frequency coefficient and high frequency residual section energy, when at least one of the section energy rides, the position of the Cai riding peak wafer (10) The segment information of the crack. ❼ look at the seventh figure 71: 'The line of the lion that converts the light into a voltage signal, part a is the normal voltage signal curve, and (4) is the voltage signal curve of the energy dip, that is, There are micro or broken __ out I and then see the eighth picture ^ which is the section energy curve after the short-time discrete wavelet processing of the voltage signal, by which: the month of each area &amp; The part shows the normal energy curve, and the 匕 part shows the sudden drop curve. It is thus known that, in the construction of the present invention, the microcracks or the sections in which the fractures are located and the normal sections can be easily recognized. Wu·Conclusion Φ Therefore, the present invention has the following characteristics by the above technical features: 1. The present invention mainly combines light conversion and discrete wavelet technique to apply the on-line instant crystal 18 detection. Not only can you avoid the processing of the secret image, but it can reduce the computational complexity, reduce the need for the reaction, and can measure the cracking and even the fracture of the wafer, thereby reducing the manual inspection and re-manufacturing. Contact, South recording, high resolution, improved production module reliability and service life, no need to reconstruct signals and frequency domain conversion. . 2. The invention can directly set up the wafer testing equipment on the production line, and can produce wafer inspection in the production of 201126159 • $, which will affect the output efficiency of the crystal production line. Accelerate the detection speed of wafer defects', thereby increasing the productivity of the wafers and the yield of the products, omitting the setting of the %-turning platform, thereby avoiding the damage of the external force caused by the robot during the handling process, so as to save production costs. The above description is only one of the possible embodiments of the present invention, and is not intended to limit the scope of the patents of the present invention, and the implementation of other changes in the content, characteristics and spirit of the claim. All should be included in the patents of the present invention. In addition to the above advantages, the present invention and its mechanism, in addition to the above-mentioned advantages, can be used in the industrial use, and can effectively improve the shortcomings caused by the use of the ship, and the ship specifically defined in the scope of the application is not found in the same kind. . Therefore, it is practical and progressive, and it has already met the requirements for invention patents. Mai has applied for it in accordance with the law. I would like to ask the fishing bureau to approve patents in accordance with the law to protect the legal rights of the applicant. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of the basic structure of the present invention. ❿The second picture is a schematic diagram of the action of the present invention. The third figure is another schematic diagram of the action of the online detection of the present invention. The fourth figure is a circuit diagram of the binary filter bank of the present invention. The fifth figure is a schematic diagram of the multiple resolution architecture of the present-scatter wavelet transform. The sixth picture is a schematic diagram of the stream gambling system of the present invention. The seventh figure is a schematic diagram of the voltage curve comparison of the present invention. The eighth figure is a schematic diagram of the energy curve of the present invention after discrete wavelet transform. [Main component symbol description]
[SI 15 201126159 (10)光學掃描裝置 (12)光學組件 (121)反射鏡 (20)感光元件 (40)晶圓 (50)跨設手段 (52)第二供設部 (54)柱體 鲁（60)距離感測模組 (11)雷射產生器 (120)狹縫元件 (122)透鏡 (30)離散小波轉換手段 (41)生產線 (51)第一供設部 (53)穿口 (55)跨接體[SI 15 201126159 (10) Optical scanning device (12) Optical component (121) Mirror (20) Photosensitive element (40) Wafer (50) Span means (52) Second supply part (54) Column body (60) distance sensing module (11) laser generator (120) slit element (122) lens (30) discrete wavelet conversion means (41) production line (51) first supply part (53) through ( 55) Spanning body