201113924 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種場發射陰極結構及使用該場發射陰極結 構之場發射顯示器° 【先前技術】 [0002] 場發射顯示器係繼陰極射線管（CRT)顯示器與液晶“CD) 顯示器之後，最具發展潛力之下一代新興技術。相對於 先前之顯示器’場發射顯示器具有顯示效果好、視角大 、功耗小以及體積小等優點，近年來越來越受到重視。 [0003] 〇 一般而言，場發射顯示器之結構可以分今二極型與三極 型。所謂二極型即包括有陽極與陰極的場發射結構，這 種結構由於需要此加馬電壓，而且均勻性以及電子發射 難以控制，僅適用於字元顯示，不適用於圖形與圖像顯 示。二極型結構則係於二極型場發射結構之基礎上增加 柵網來控制電子發射之場發辦結構，可以實現於較低電 壓條件下發出電子’而且電子發射容㈣由栅網來精確 控制。因此，三極型場發弩鳄讓器中，這種由產生電子 之陰極與引出電子並將電子加速的栅網構成的場發射陰 極結構成為目前較為常用之一種場發射陰極結構。 [0004]請參見圖1及圖2，先前之場發射陰極結構1〇通常包括一 絕緣基底12 ;複數個陰極電極14，該複數個陰極電極14 位於該絕緣基底12上且沿同—杨平行間隔絕緣設置； 複數個電子發料如，該複數個電子發料切均勾 分佈於複數個陰極電極14上，與該陰極電極14電連接， 每個電子發射單仙包括一電子發射H質層16， 098134057 表單編號A0101 第3頁/共37頁 0982058283-0 201113924 該介質層16設置於所逑絕緣基底12上，並對應電子發射 單元11設有通孔’該電子發射單元11設置在該通孔内； 複數個栅網18 ’該柵網18設置於所述介質層16上，與陰 極電極14異面垂直。 [0005] 所述場發射陰極結構1〇於工作過程中，所述電子發射體 發射之部分電子會轟擊所述介質層16，使得該介質層16 發射二次電子’並於該介質層16積累正電荷，使得介質 層16周圍之電位發生改變，所以，電子發射方向難以控 制’加劇了電子向四周發散，進而導致使用該場發射陰 極結構10的場發射顯示器之圖像顯示模糊。 【發明内容】 [0006] 有鑒於此’確有必要提供一種使圖像顯示清晰之場發射 陰極結構及使用該場發射陰極結構之場發射顯示器。 [0007] —種場發射陰極結構，其包括：一絕緣基底；一陰極電 極，該陰極電極設置於所述絕緣基底；一介質層，該介 質層具有一第一表面、一與該第一表面相對設置之第二 表面及一通孔，該介質層設置於_述絕緣基底，且該介 質層之第一表面與所述絕緣基底接觸；一電子發射單元 ’該電子發射單元設置於所述陰極電極且位於所述介質 層之通孔内’並與該陰極電極電連接；以及一柵網，該 柵網覆蓋所述介質層之通孔，使得所述電子發射單元發 射之電子藉由該栅網射出；其中，所述場發射陰極結構 進一步包括一導電層’該導電層設置於所述介質層之第 二表面且與所述栅網電連接，並與所述電子發射單元電 絕緣。 098134057 表單編號A0101 第4頁/共37頁 0982058283-0 201113924 [0008] 種場發射陰極結構，其包括：一絕緣基底；十極電 極，該陰極電極設置於所述絕緣基底；—介^ 質層具有一第一表面及— θ以" 與该第一表面相對設置之第二 表面，該介質層設置於所述騎基底，且料質層1 一表面與所述絕緣基底接觸；—電子發射單元^電子 發射單元設置於所述陰極電極且暴露於關環境中，並 亥陰極電極電連接H栅網，該_覆蓋所述介 質層’並料該介質層與所述陰極電極電絕緣，且所述 Ο 電子發射單射之電子藉由該柵網射出；其中，所述 場發射陰極結構進-步包括-導電層，該導電層設置於 所述介質層之第二表面且與所述柵網電連接，並與所述 電子發射單元電絕緣。 [0009] ο 〆種場發射顯示器，其包括一陽極結構及與該陽極結構 間隔設置的-場發射陰極結構，該場發射陰極結構包括 :-絕緣基底；複數個陰極電極，該複數個陰極電極平 行立絕緣間隔設置於所述絕緣基底；一介質層’該介質 層設置於所述絕緣基底，且具有一第一表面、一與該第 /表面相對設置之第二表面及複數個通孔，該介質層之 第〆表面與所述絕緣基底接觸；複數個電子發射單元， 該複數個電子發射單元間隔設置於所述複數個陰極電極 益與其所在的陰極電極電連接並，該複數個電子發射單 元與所述介質層之複數個通孔一一對應，且位於其對應 之通孔内，以及複數個柵網，該複數個栅網平行且絕緣 間隔設置，並與所述複數個陰極電極異面垂直，每個柵 _覆蓋所述介質層之複數個通孔’使得所述電子發射單 098134057 表單編號A0101 第5頁/共37頁 0982058283-0 201113924 元發射之好藉由缝網”；其巾，所料發射陰極 結構進-步包減數個”層，該複數料電層之間平 行且絕緣間隔設置’並與所述複數個陰極電極異面垂直 ’該複數個導電層設置於所述介質層之第二表面，且盘 所述複數個電子發射單元電絕緣，且與該電子㈣單元 對應之栅網電連接。 [0010] [0011] 與先前技術相比較’本發明提供之場發射陰極結構，由 於所述介質層上設置有導電層，該導電層與所述柵網電 連接，電子發射體發射出的一部分電子落到導電層上， 可以藉由該導電層及栅網導走，減少或避免該部分電子 轟擊所述介質層產生二次電子。另外，電子發射體發射 出的一小部分電子直接轟擊所述介質層，使得該介質層 發射-次電子’並於該介質層產生正電荷，而該正電荷 可以藉由所述導電層及栅網導走，減少或避免所述介質 層積累正電荷，進而使得該介質層周圍之電位基本不發 生變化，從而減少電子發射體發射之電丰向四周發散的 可能性，使電子集中射向預气位置，進而使得利用該場 發射陰極結構之場發射顯示器之圖像顯示清晰、顯示效 果較好。 【實施方式】 下面將結合附圖及具體實施例，對本發明提供之場發射 陰極結構及使用該場發射陰極結構之場發射顯示器作進 一步的詳細說明。 請參閱圖3，本發明第一實施例提供一種場發射陰極結構 100，該場發射陰極結構100包括一絕緣基底110、—陰 098134057 表單編號A0101 第6頁/共37頁 0982058283-0 [0012] 201113924 極電極120、一電子發射單元13〇、一介質層i4〇、一柵 網150以及一導電層160。 [0013] 其中’所述陰極電極設置於所述絕緣基底no上。所 述介質層140具有一通孔142、一第一表面144以及一第 二表面146 ;該第二表面146與第—表面144相對設置， 該介質層140設置於所述絕緣基底11〇上，且該介質層 140的第一表面144與所述絕緣基底no接觸。所述電子 發射單元130設置於所述陰極電極120上且與該陰極電極 120電連接，並且該電子發射單元130位於所述介質層之 通孔142内。所述柵網150覆蓋所述介質層140的通孔142 ，使得所述電子發射單元130發射之電子藉由該柵網150 射出。所述導電層160設置於所述介質層140之第二表面 146且與所述柵網150電連接，並與所述電子發射單元 130電絕緣。 [〇〇14] 所述絕緣基底110之材料為玻璃、陶瓷或二氧化矽等絕緣 材料。本實施例中，所述絕緣基底材料為玻璃。 [0015] 所述陰極電極120之材料為銅、鋁、金、銀等金屬或銦錫 氧化物（ITO)，本實施例中，所述陰極電極120為銀電 極。 [ooie]所述電子發射單元130暴露於周圍環境中’以便發射電子 ，其包括複數個電子發射體，該電子發射體為金屬微尖 、石夕尖或者奈米碳管，也可以採用其他電子發射體。本 實施例中’所述電子發射體為奈米碳管《 [0017]所述介質層140之材料為玻璃、陶瓷或二氧化矽等絕緣材 098134057 表單編號A0101 第7頁/共3*7頁 0982058283-0 201113924 八質 料’該介質層140的高度大於15微米。本實施例中 a a介質層1 4 0 層140之材料為陶瓷，其高度為20微米。所述，丨只 1 G 0電絕緣 之作用係為了使所述陰極電極120與所述柵網 ，且可以使得所述電子發射單元i30暴露於周園柘批中口 故，所述介質層140也可以為其他形狀，如多個條 要保證所述陰極電極120與所述栅網150電絕緣即^ * ,¾ 146 f [0018] 所述導電層160設置於所述介質層140之第二承 具體地，所述導電層160可以直接設置於所遂7丨質 之第二表面146，即所述導電層16〇直接與所述介只 〆 4中 ί 140之第二表面146接觸，兩者之間沒有設置其他凡 所述導電層160也可以間接設置於所述介質廣140之第 表面146，即所述導電層160與所述介質層140之第〆 面146之間還設置有其他元件。所述導電層160<以藉由 塗敷、印刷等方法將一導電漿料形成於所述第二表面146 上。所述導電層160之材料為金屬、合金、氧化銦錫（ ΙΤΟ)、銻錫氧化物（ΑΤΟ)、導電銀膠、導電聚合物或 奈米碳管膜等導電材料。所述彦屬為鋁、銀、銅、嫣、 鉬或金等金屬。所述合金為鋁、銅、銀、鎢、钥與金中 兩種以上金屬的合金。本實施例中，所述導電層16〇直接 設置於所述介質層140之第二表面146，所述導電層160 之材料為銀。 [0019] 所述柵網150直接設置於所述導電層160上，使得所述導 電層160位於所述介質層140之第二表面146與該柵網150 之間。所述柵網150為一金屬網狀結構，其包括複數個均 勻分佈的柵孔，該柵孔為通孔，所述電子發射單元130發 098134057 表單編號Α0101 第8頁/共37頁 0982058283-0 201113924 [0020] Ο [0021] Ο [0022] [0023] 射之電子可以藉由该拇孔射出。所述栅孔的直徑為3微米 -1000微米。所述柵網150與所述陰極電極120之間的距 離大於等於10微米。本實施例中，所述柵網150為一條形 不銹鋼網，其與所述陰極電極120之間的距離為15微米。 場發射陰極結構100於應用時’分別施加不同電壓給陰極 電極120與柵網15〇。一般情況下’陰極電極120為接地 或零電壓，柵網15〇的電壓為幾十伏至幾百伏左右。所述 電子發射單元130中之電子發射體所發出的電子於電場作 用下，向柵網150之方向運動。 其中，大部分電子藉由柵網150的柵孔發射到預定的位置 ，實現場發射陰極结構100之功能。一部分電子藉由栅網 150之栅孔發射出去後又回落到所述柵網150或所述導電 層160上，由於該導電層160與柵網150電連接，可以藉 由該導電層160導走’減少或避免該部分電子轟擊所述介 質層產生二次電子。一小部分f子直接养聲所述介質層 140，使得該介質層140發射二次電爭，並於該介質層 140產生正電荷，該正電荷可以藉由所述導電層160及柵 網150導走’減少或避免該介質層140積累正電荷，進而 使得該介質層140周圍之電位基本不發生變化，從而減少 電子發射體發射之電子向四周發散的可能性。 因此，本發明實施例提供之場發射陰極結構1〇〇產生的電 子不容易向四周發散，能夠較好的控制電子之發生方向 ，使電子集中射向預定位置。 請參閱圖4，本發明第二實施例提供一種場發射陰極結構 098134057 表單編號A0101 第9頁/共37頁 0982058283-0 201113924 200，其包括一絕緣基底2i〇、一陰極電極220、一電子 發射單元230、一介質層240、一柵網250、一導電層260 以及一固定層270。其中，該介質層240具有一通孔242 、一第一表面244以及一第二表面246 ;該介質層240之 第二表面246與所述第一表面244相對設置。 [0024] 本實施例提供之場發射陰極結構2〇〇之結構及材料與第一 實施例提供之場發射陰極結構1〇〇之結構及材料基本相同 ’不同之處在於：所述栅網250直接設置於所述介質層 240之第二表面264。該場發射陰極結構200進一步包括 所述固定層270 ’該固定層270直接設置於所述栅網250 达離所述介質層240之表面，即栅網250設置於所述固定 層270與所述介質層240之第二表面264之間。所述導電 層260直接設置於所述固定層27〇遠離所述栅網25〇的表 面’即所述固定層270設置於所述柵網250與所述導電層 260之間。 [0025] 所述固定層270之結構及材料與所述介質層240之結構及 材料相同。當一小部分電子轟擊該固定層270時，該固定 層270會發射二次電子，並於該固定層270產生正電荷， 由於所述導電層260設置於所述固定層270遠離所述栅網 250之表面，所述導電層26〇與所述柵網250電連接，所 述正電荷可以藉由該導電層260及柵網250導走，減少或 避免該固定層270積累正電荷，進而使得該固定層270周 圍之電位基本不發生變化’從而滅少電子發射體發射之 電子向四周發散的可能性。 [0026] 可以理解，本實施例中也可以不設置固定層270，所述導 098134057 表單編號A0101 第10頁/共37頁 〇982 201113924 電層26〇直接《^置：^所述_250的表面，使得所述柵網 250位於所述導f層260與所述介質層24{)之第二表面246 mtweo也可以起到固㈣述栅網25〇之作用 〇 [0027] 明參閱圖5 ’本發明第三實施例提供—種場發射陰極結構 300 ’其包括-絕緣基底31〇、一陰極電極32〇、一電子 發射單元330、一介質層34〇、一柵網35〇以及一導電層 360。其中，該介質層34〇具有一通孔342、一第一表面 Ο [0028] 344以及一第二表面346 ;該介質層34〇之第二表面346與 所述第一表面344相對設置,β:. 本實施例提供之場發射陰極結構3〇〇之結構及材料與第一 實施例提供之場發射陰極結構1〇〇之結構及材料基本相同 ，不同之處在於：所述導電層36〇進一步包括第一導電層 362及第二導電層364，該第一導電層362直接設置於所 述介質層340之第二表面346，且該第一導電層362設置 於所述介質層340之第二表面346與所述柵網350之間。 Ο 所述第二導電層364直接設置於所述柵網350遠離第一導 電層362之表面，使得所述栅網350設置於所述第一導電 層362及第二導電層364之間。其中，所述第一導電層 362、第二導電層364之作用與第一實施例中之導電層 160之作用相同；此外，所述第二導電層364還具有固定 所述柵網350，防止或減少柵網350於工作時變形。 請參閱圖6，本發明第四實施例提供一種場發射陰極結構 4〇〇，其包括一絕緣基底410、一陰極電極420、一電子 發射單元430、一介質層440、一柵網450、一導電層460 098134057 表單編號Α0101 第11頁/共37頁 0982058283-0 [0029] 201113924 以及一固定層470。其中，該介質層440具有一通孔442 、一第一表面444以及一第二表面446 ;該介質層440之 第二表面446與所述第一表面444相對設置。所述導電層 460包括一第一導電層462及一第二導電層464。 [0030] 本實施例提供之場發射陰極結構400之結構及材料與第三 實施例提供之場發射陰極結構300之結構及材料基本相同 ，不同之處在於：所述場發射陰極結構400進一步包括所 述固定層470，該固定層470直接設置於所述栅網450遠 離第一導電層462之表面，使得所述栅網450設置於該固 0 定層470與所述第一導電層462之間，所述固定層470用 於固定所述栅網450，使得所述栅網450於工作時，不易 發生變形。所述第二導電層464直接設置於所述固定層 470遠離柵網450之表面，使得該固定層470位於所述第 二導電層464與所述栅網450之間。 [0031] 所述固定層470之材料與所述介質層440之材料相同。所 . 述第二導電層464設置於所述固定層470遠離柵網450之 表面，可以防止因電子落到該固定層470上使得該固定層 ti 470發射二次電子，進而積累正電荷，防止固定層470周 圍之電位發生明顯改變，減緩了電子向四周發散，更好 的控制電子之方向性。所述第一導電層462設置於所述介 質層440之第二表面446的作用與第一實施例中之導電層 160設置於所述介質層140之第二表面146之作用相同。 [0032] 請參閱圖7及圖8，本發明第五實施例提供一種場發射陰 極結構500，其包括一絕緣基底510，複數個陰極電極 520，複數個電子發射單元530，一介質層540，複數個 098134057 表單編號 A0101 第 12 頁/共 37 頁 098205B283-0 201113924 [0033] Ο [0034] Ο [0035] 柵網550以及複數個導電層560。本實施例提供之場發射 陰極結構500之材料及工作原理與第—實施例提供之場發 射陰極結構100的材料及工作原理基本相同。本實施例提 供之場發射陰極結構500與第一實施例提供之場發射陰極 結構100相似，不同之處在於：本實施例中之陰極電極 520、電子發射單元530、栅網550以及導電層56〇為複數 個。 所述陰極電極520的形狀為長條形或帶狀，所述複數個陰 極電極520平行且絕緣間隔設置於該絕緣基底51〇上，且 母個陰極電極520上均勻分佈有複數個電子發射單元53〇 所述介質層540具有複數個通孔542、一個第一表面以及 一個第二表面546 ;所述第二表面546與第一表面相對設 置。該介質層540設置於所述絕緣基底510，且該介質層 540的第一表面與所述絕緣基底510接觸❶所述複數個電 子發射單元530間隔設置於所述複數個陰極電極520並與 其所在的陰極電極520電連接，且呈矩陣排列；該複數個 電子發射單元530與所述介質層540的複數個通孔542— 一對應，且每一個電子發射單元530設置於其對應之通孔 542 内。 所述柵網550的形狀為長條形或帶狀，且包括複數個均勻 分佈的栅孔。所述複數個柵網550平行且絕緣間隔設置， 並與所述複數個陰極電極520異面垂直，每個栅網550覆 蓋所述介質層540的複數個通孔542，使得所述電子發射 單元530發射之電子藉由該柵網550射出。 098134057 表單編號Α0101 第13頁/共37頁 0982058283-0 201113924 [0036] 所述複數個導電層560之間平行且絕緣間隔設置，並與所 述複數個陰極電極520異面垂直，該複數個導電層56〇直 接設置於所述介質層540之第二表面546，且與所述複數 個電子發射單元530電絕緣，且與該電子發射單元53〇對 應之柵網550電連接。其中，所述每個導電層560與所述 介質層540之第二表面546的位置關係與第一實施例中之 導電層160與所述介質層140之第二表面146的位置關係 相似。 [0037] 可以理解，本發明第二至四實施例提供之場發射陰極結 構中之陰極電極、電子發射單元、栅網以及導電層也可 以為複數個。 [0038] 所述場發射陰極結構500於應用時，分別施加不同電壓給 陰極電極520與栅網550。陰極電極520上的電子發射單 元530中之電子發射體所發出的大部分電子藉由栅網55〇 之柵孔發射到預定的位置，由於複數個陰極電極520之間 相互絕緣、複數個條形柵網55〇之間相互絕緣，因此，藉 由選擇性地於某些陰極電極52()與某些柵網550之間施加 不同之電壓，可控制不同位置之電子發射單元53〇發射電 子，實現場發射陰極結構5〇〇的定址功能，滿足其於場發 射顯示器中之應用。 [0039] 請參見圖7至圖9，本發明實施例提供一種場發射顯示器 20，該場發射顯示器2〇包括一本發明第四實施例提供之 場發射陰極結構500與一陽極結構6〇〇。所述陽極結構 6 0 0與所述場發射陰極結構5 q 〇中之複數個柵網5 5 〇保持 一定距離。 098134057 表單編號A0101 第14頁/共37頁 0982058283-0 201113924 [0040] 所述陽極結構600包括一玻璃基底614，設置於該玻璃基 底614的透明陽極61 6及塗覆於該透明陽極616之螢光層 618。所述陽極結構6〇〇藉由一絕緣支撐體620與場發射 陰極結構5〇〇中之絕緣基底510封接，所述複數個柵網 550固定於該絕緣支撐體62〇。所述透明陽極616可為氧 化鋼錫薄膜。 [0041] Ο 所述場發射顯示器20於應用時，分別施加不同電壓給陰 極電極520與栅網550。一般情況下，陰極電極520為接 地或零電壓，柵網550的電壓為幾十伏至幾百伏左右《陰 極電極520的電子發射單元530中之電子發射體所發出的 電子在電場作用下，向栅網550的方向運動，藉由栅網 550的柵孔發射出去。然後，電子在陽極616與柵網55〇 之間的電場之作用下，最終到達陽極結構，轟擊塗覆 於透明陽極616上的螢光層618，發出螢光，實現場發射 顯示器2 0之顯示功能。 [0042] Ο 由於複數個陰極電極520之間相互絕緣、複數個柵網55〇 之間相互絕緣，因此，藉由選擇性地於不同之陰極電極 520與栅網550之間施加不同之電壓，可以控制不同位置 的電子發射單元530發射電子，電子轟擊陽極結構6〇〇之 不同位置的螢光層618，從而使不同位置之螢光層618發 光，使場發射顯示器2〇根據需要顯示不同的畫面◊由於 本實施例所使用的場發射陰極結構5〇〇產生的電子不容易 向四周發散，能夠較好的控制電子之發射方向，可以集 中Α擊勞光層618，使得該場發射顯示器2{)顯示的圖像清 晰、效果較好。 098134057 表單編號A0101 第15頁/共37頁 0982058283-0 201113924 [0043] 明參閱圖l〇 ’本發明實施例提供一種場發射顯示器3〇， 該場發射顯示器3〇包括一場發射陰極結構7〇〇與一陽極結 構800。所述陽極結構800包括一玻璃基底814，一透明 陽極816及一螢光層818。所述陽極結構800與所述場發 射陰極結構700保持—定距離。 [0044] 所述場發射陰極結構7〇〇包括一絕緣基底71〇，複數個陰 極電極720，複數個電子發射單元73〇，一介質層74〇， 複數個柵網750，複數個導電層76〇以及一固定層。 所述介質層740具有多個通孔742、一個第一表面以及— 個第二表面746。本實施#1提供之場發射陰極結構7〇〇與 第一實施例提供之場發射陰極結構2 〇 〇相似，不同之處在 於：本實施例中之陰極電極720、電子發射單元730、栅 網750以及導電層760為複數個。 [0045] 該場發射顯示器30與所述場發射顯示器2〇之結構基本相 同，不同之處在於：所述場發射陰極結構7〇〇與所述場發 射陰極結構500不同。具體地，該場發射陰極結構進 一步包括所述固定層770 ;該固定層77〇直接設置於所述 多個柵網750遠離所述介質層740的表面，所述多個導電 層760設置於所述固定層770遠離所述栅網75〇的表面， 且所述固定層770設置於所述多個柵網75〇與多個導電声 760之間。所述固定層770的結構材料與所述介質層74〇 的結構及材料相同；即該固定層770具有多個第二通孔， 該多個第二通孔與所述多個通孔742 ——對應。所述多個 桃網750直接設置於所述介質層740遠離所述絕緣基底 71 0的表面。 098134057 表單編號A0101 第16頁/共37頁 201113924 [0046] Ο ο [0047] [0048] 月參閱U ’該圖為所述場發射顯示器30沒有多個導電層 760的& ;兄下的顯示效果。請參閲圖12，該圖為所述場發 射顯不器30的顯示效果。從圖11，12可以看出：圖"中 之像素點顯不崎模糊，112巾之像素點齡比較清晰 乂係因為圖11中之場發射顯示器於沒有多個導電層76〇 之匱况下，有部分電子會轟擊所述固定層770及介質層 740並產生二次電子，使得該固定層頂及介質層μ上 積累正電何’電位發生改變，從而使得電子向四周發散 加劇，導致該顯示器之像素點比較模糊；@12中之場發 射顯示H3G中具有多個導電層微，該多個導電層76〇與 所述多個柵網75〇電連接’可以導輕到該多個導電廣 760上之電子’減少或避免固定層770產生二次電子；也 可以導走所述固定層77Q上產生的正電荷，使得該固定層 770周圍之電位基本不發生改變，還可以導走介質層74〇 上產生的部分正電荷’減緩該介質層74()關電位之改變 :因此，減少電子發射體發_電子向四周發散的可能 性，電子集中射向預；t位置，進而使_用所述場發射 顯示器30的圖像顯示清晰、顯示乂:乘較好。 可以理解’本發明實施例提供之如器巾讀極結構也 可以採用上述多個陰極結構300或多個陰極結構4〇〇。 本發明實施例提供之場發射陰極結構及使用該場發射陰 極結構之場發射顯示器具有以下優點：第一，由於所述 介質層上設置有導電層’該導電層與所述栅網電連接， 電子發射體發射出之一部分電子落到導電層上，可以藉 由該導電層與栅網導走’減少或避免該部分電子爲擊所 098134057 表單編號A0I01 第17頁/共37頁 0982058283-0 201113924 述介質層或固定層產生二次電子。第二1子發射體發 射出之-小部分電子直接轟擊所述介f層或固定層，使 得該介質層或固定層發射二:欠電子，並於該介質層或固 定層產生正電荷’而該正電荷可以藉由所述導電層與概 網導走’減少或避免所述介質層或固定層上積累正電荷 ，進而使得該介質層或固定層周圍之電位基本不發生變 化’從而減少電子發射體發射之電子向四周發散的可能 性’使電子集中射向預定位置’進而使得利用該場發射 陰極結構之場發射顯示器之圖像顯示清晰、顯示效果較 好。第三，由於所述柵網由導電層或固定層固[該拇 網被牢固地固定，不易因為發生變形造成柵網與陰極之 間的間距不均勻’進而影響場發射陰接結構均勻地發射 電子，因此，該場發射陰極結構結構穩定，不易受外界 環境之影響’進而㈣該場發射陰極結構之場發射顯示 器結構穩定，不易受外界環境的影響。第四，由於所述 栅網被牢固地固定，因此，即使當所述柵鋼與所述陰極 電極之間的距離較小時，讀毒g射陰榼結構在工作時不 會因為電場力的作用發生變形而造咸陰極與柵極短路現 象，因此該場發射陰極結構工作電屋易於控置，場發射 之可控性較好，進而使得場發射顯示器之圖像顯示效果 較好。 [0049] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施例 ’自不能以此限制本案之申請專利範圍。舉凡熟系本荦 技藝之人士挺依本發明之精神所作之專效修錦或變化， 098134057 表單編號Α0101 第18頁/共37頁 0982058283-0 201113924 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0050] [0051] [0052] [0053] Ο [0054] [0055] [0056] ❹ [0057] [0058] [0059] [0060] 圖1為先前技術中之場發射陰極結構之俯視圖。 圖2為沿圖1中H - Π線剖開之剖面圖。 圖3為本發明第一實施例提供之場發射陰極結構之剖面圖 〇 圖4為本發明第二實施例提供之場發射陰極結構之剖面圖 〇 圖5為本發明第三實施例提供之場發射陰極結構之剖面圖 〇 圖6為本發明第四實施例提供之場發射陰極結構之刳面圖 〇 圖7為本發明第五實施例提供之場發射陰極結構之立體分 解圖。 圖8為本發明第五實施例提供之場發射陰極結構之剖面圖 〇 圖9為採用圖8中之場發射陰極結構之場發射顯示器之剖 面圖。 圖10為採用圖4中之場發射陰極結構之場發射顯示器之剖 面圖。 圖11為圖1 0中場發射顯示器於沒有導電層的情況下的顯 示效果示意圖。 098134057 表單編號A0101 第19頁/共37頁 0982058283-0 201113924 [0061] 圖12為圖10中之場發射顯示器之顯示效果示意圖。 [0062] 【主要元件符號說明】 場發射陰極結構：100 ; 200 ; 300 ; 400 ; 500 ; 700 [0063] 絕緣基底：110 ; 210 ; 310 ; 410 ; 510 ; 710 [0064] 陰極電極：120 ; 220 ; 320 ; 420 ; 520 ; 720 [0065] 電子發射單元：130 ; 230 ; 330 ; 430 ; 530 ; 730 [0066] 介質層：140 ; 240 ; 340 ; 440 ; 540 ; 740 [0067] 通孔：142 ; 242 ; 342 ; 442 ; 542 ; 742 [0068] 第一表面：144 ; 244 ; 344 ; 444 ; [0069] 第二表面：146 ; 246 ; 346 ; 446 ; 546 ; 746 [0070] 柵網：150 ; 250 ; 350 ; 450 ; 550 ; 750· [0071] 導電層：160 ; 260 ; 360 ; 460 ; 560 ; 760 [0072] 第一導電層：362 ; 462 [0073] 第二導電層：364 ; 464 [0074] 固定層：270 ; 470 ; 770 [0075] 場發射顯示器：20 ; 30 [0076] 陽極結構：600 ; 800 _] 玻璃基底：614 ; 814 [0078] 透明陽極：616 ; 816 [0079] 螢光層：618 ; 818 098134057 表單編號A0101 第20頁/共37頁 0982058283-0 201113924 [0080] 絕緣支撐體：620 〇 ❹ 098134057 表單編號A0101 第21頁/共37頁 0982058283-0201113924 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a field emission cathode structure and a field emission display using the field emission cathode structure. [Prior Art] [0002] Field emission display is followed by cathode ray After the tube (CRT) display and liquid crystal "CD" display, the next generation of emerging technologies with the most development potential. Compared with the previous display 'field emission display, it has the advantages of good display effect, large viewing angle, low power consumption and small size. [0003] In general, the structure of a field emission display can be divided into a diode type and a three-pole type. The so-called two-pole type includes a field emission structure having an anode and a cathode. This gamma voltage is required, and the uniformity and electron emission are difficult to control. It is only suitable for character display, not for graphic and image display. The two-pole structure is based on the two-pole field emission structure. To control the structure of the electron emission field, it is possible to emit electrons under lower voltage conditions and the electron emission capacity (4) Precise control. Therefore, in a three-pole field crocodile crocodile, the field emission cathode structure composed of a cathode for generating electrons and a grid for extracting electrons and accelerating electrons has become a commonly used field emission cathode structure. Referring to FIG. 1 and FIG. 2, the previous field emission cathode structure 1A generally includes an insulating substrate 12; a plurality of cathode electrodes 14 are disposed on the insulating substrate 12 and are parallel along the same-yang. a plurality of electron emission materials, for example, the plurality of electron emission cuts are uniformly distributed on the plurality of cathode electrodes 14 and electrically connected to the cathode electrode 14, each electron emission unit includes an electron emission H layer 16, 098134057 Form No. A0101 Page 3 of 37 0982058283-0 201113924 The dielectric layer 16 is disposed on the insulating substrate 12 and is provided with a through hole corresponding to the electron emission unit 11. The electron emission unit 11 is disposed in the pass a plurality of grids 18' are disposed on the dielectric layer 16 perpendicular to the surface of the cathode electrode 14. [0005] The field emission cathode structure 1 is in operation Part of the electrons emitted by the electron emitter bombard the dielectric layer 16 such that the dielectric layer 16 emits a secondary electron 'and accumulates a positive charge in the dielectric layer 16, causing a potential change around the dielectric layer 16, so that the electron emission direction Difficult to control 'intensifies the divergence of electrons to the surroundings, resulting in blurring of the image of the field emission display using the field emission cathode structure 10. [Invention] [0006] In view of this, it is indeed necessary to provide a clear image display. a field emission cathode structure and a field emission display using the field emission cathode structure. [0007] A field emission cathode structure comprising: an insulating substrate; a cathode electrode, the cathode electrode being disposed on the insulating substrate; a medium a dielectric layer having a first surface, a second surface disposed opposite the first surface, and a through hole, the dielectric layer being disposed on the insulating substrate, and the first surface of the dielectric layer and the insulating substrate Contacting; an electron emission unit 'the electron emission unit is disposed on the cathode electrode and located in the through hole of the dielectric layer' and a cathode electrode is electrically connected; and a grid covering the through hole of the dielectric layer, such that electrons emitted by the electron emission unit are emitted by the grid; wherein the field emission cathode structure further comprises a conductive The layer 'the conductive layer is disposed on the second surface of the dielectric layer and electrically connected to the grid and electrically insulated from the electron emission unit. 098134057 Form No. A0101 Page 4 of 37 0982058283-0 201113924 [0008] A field emission cathode structure comprising: an insulating substrate; a ten pole electrode, the cathode electrode being disposed on the insulating substrate; - a dielectric layer Having a first surface and - θ with a second surface disposed opposite the first surface, the dielectric layer is disposed on the riding substrate, and a surface of the material layer 1 is in contact with the insulating substrate; - electron emission a unit ^electron emitting unit is disposed on the cathode electrode and exposed to an off environment, and the cathode electrode is electrically connected to the H grid, which covers the dielectric layer 'and the dielectric layer is electrically insulated from the cathode electrode, and The electron emission single-shot electron is emitted by the grid; wherein the field emission cathode structure further includes a conductive layer disposed on the second surface of the dielectric layer and opposite to the gate The grid is electrically connected and electrically insulated from the electron-emitting unit. [0009] A field emission display comprising an anode structure and a field emission cathode structure spaced apart from the anode structure, the field emission cathode structure comprising: an insulating substrate; a plurality of cathode electrodes, the plurality of cathode electrodes Parallel vertical insulation is disposed on the insulating substrate; a dielectric layer is disposed on the insulating substrate, and has a first surface, a second surface opposite to the first surface, and a plurality of through holes. The second surface of the dielectric layer is in contact with the insulating substrate; a plurality of electron-emitting units are disposed at intervals of the plurality of cathode electrodes to be electrically connected to the cathode electrode thereof, and the plurality of electron emission The unit is in one-to-one correspondence with the plurality of through holes of the dielectric layer, and is located in the corresponding through hole, and a plurality of grids, the plurality of grids are arranged in parallel and insulated, and different from the plurality of cathode electrodes The faces are vertical, and each gate _ covers a plurality of through holes of the dielectric layer such that the electron emission is 098134057 Form No. A0101 Page 5 of 37 098205 8283-0 201113924 The good emission of the yuan by the seam net"; its towel, the emission of the cathode structure into the step-by-step reduction of several layers, the plurality of electrical layers are parallel and insulated between the interval 'and with the plural The plurality of conductive layers are disposed on the second surface of the dielectric layer, and the plurality of electron-emitting units are electrically insulated and electrically connected to the grid corresponding to the electronic (four) unit. [0011] Compared with the prior art, the field emission cathode structure provided by the present invention, since the dielectric layer is provided with a conductive layer, the conductive layer is electrically connected to the grid, and a part of the electron emitter is emitted. The electrons fall on the conductive layer and can be guided away by the conductive layer and the grid to reduce or prevent the electrons from bombarding the dielectric layer to generate secondary electrons. In addition, a small portion of electrons emitted by the electron emitter directly bombard the dielectric layer such that the dielectric layer emits a secondary electron and generates a positive charge in the dielectric layer, and the positive charge can be generated by the conductive layer and the gate. The mesh guides to reduce or avoid the positive charge accumulated in the dielectric layer, so that the potential around the dielectric layer does not substantially change, thereby reducing the possibility that the electron emission emitted by the electron emitter diverges to the periphery, and the electrons are concentrated toward the pre-precipitation. The gas position, in turn, makes the image of the field emission display using the field emission cathode structure clear and the display effect is good. [Embodiment] Hereinafter, a field emission cathode structure provided by the present invention and a field emission display using the field emission cathode structure will be further described in detail with reference to the accompanying drawings and specific embodiments. Referring to FIG. 3, a first embodiment of the present invention provides a field emission cathode structure 100. The field emission cathode structure 100 includes an insulating substrate 110, which is 098, 134, 057. Form No. A0101, Page 6 of 37, 098, 205, 828, 828, [0012] 201113924 A pole electrode 120, an electron emission unit 13A, a dielectric layer i4, a grid 150, and a conductive layer 160. [0013] wherein the cathode electrode is disposed on the insulating substrate no. The dielectric layer 140 has a through hole 142, a first surface 144 and a second surface 146; the second surface 146 is disposed opposite to the first surface 144, and the dielectric layer 140 is disposed on the insulating substrate 11? The first surface 144 of the dielectric layer 140 is in contact with the insulating substrate no. The electron emission unit 130 is disposed on the cathode electrode 120 and electrically connected to the cathode electrode 120, and the electron emission unit 130 is located in the through hole 142 of the dielectric layer. The grid 150 covers the through holes 142 of the dielectric layer 140 such that electrons emitted by the electron emission unit 130 are emitted by the grid 150. The conductive layer 160 is disposed on the second surface 146 of the dielectric layer 140 and electrically connected to the grid 150 and electrically insulated from the electron emission unit 130. [14] The material of the insulating substrate 110 is an insulating material such as glass, ceramic or cerium oxide. In this embodiment, the insulating base material is glass. [0015] The material of the cathode electrode 120 is a metal such as copper, aluminum, gold or silver or indium tin oxide (ITO). In the embodiment, the cathode electrode 120 is a silver electrode. [oie] The electron emission unit 130 is exposed to the surrounding environment to emit electrons, and includes a plurality of electron emitters, which are metal microtips, Shishijian or carbon nanotubes, and other electrons may also be used. Emitter. In the present embodiment, the electron emitter is a carbon nanotube. The material of the dielectric layer 140 is an insulating material such as glass, ceramic or cerium oxide. 098134057 Form No. A0101 Page 7 of 3*7 0982058283-0 201113924 Eight materials 'The height of the dielectric layer 140 is greater than 15 microns. In the present embodiment, the material of the a a dielectric layer 140 layer 140 is a ceramic having a height of 20 μm. The function of the electrical insulation of only 1 G 0 is to make the cathode electrode 120 and the grid, and the electron emission unit i30 may be exposed to the mouth of the Zhouyuan batch, the dielectric layer 140. Other shapes, such as a plurality of strips, may be used to ensure that the cathode electrode 120 is electrically insulated from the grid 150, that is, the conductive layer 160 is disposed on the second layer of the dielectric layer 140. Specifically, the conductive layer 160 may be directly disposed on the second surface 146 of the substrate 7 , that is, the conductive layer 16 is directly in contact with the second surface 146 of the dielectric layer 145 . The conductive layer 160 may also be disposed indirectly between the first surface 146 of the medium 140, that is, between the conductive layer 160 and the second surface 146 of the dielectric layer 140. element. The conductive layer 160 is formed on the second surface 146 by a method of coating, printing, or the like. The material of the conductive layer 160 is a conductive material such as a metal, an alloy, indium tin oxide (yttrium), antimony tin oxide (yttrium), a conductive silver paste, a conductive polymer or a carbon nanotube film. The genus is a metal such as aluminum, silver, copper, ruthenium, molybdenum or gold. The alloy is an alloy of two or more metals selected from the group consisting of aluminum, copper, silver, tungsten, and molybdenum. In this embodiment, the conductive layer 16 is directly disposed on the second surface 146 of the dielectric layer 140. The conductive layer 160 is made of silver. [0019] The grid 150 is disposed directly on the conductive layer 160 such that the conductive layer 160 is located between the second surface 146 of the dielectric layer 140 and the grid 150. The grid 150 is a metal mesh structure including a plurality of uniformly distributed gate holes, the gate holes are through holes, and the electron emission unit 130 sends 098134057 Form No. 1010101 Page 8/37 Page 0982058283-0 [0020] [0023] [0023] The emitted electrons can be emitted through the thumb hole. The gate holes have a diameter of from 3 micrometers to 1000 micrometers. The distance between the grid 150 and the cathode electrode 120 is 10 μm or more. In this embodiment, the grid 150 is a strip-shaped stainless steel mesh having a distance of 15 microns from the cathode electrode 120. The field emission cathode structure 100 applies different voltages to the cathode electrode 120 and the grid 15 于, respectively, when applied. In general, the cathode electrode 120 is grounded or zero voltage, and the voltage of the grid 15 is about several tens of volts to several hundred volts. The electrons emitted from the electron emitters in the electron-emitting unit 130 move toward the grid 150 under the action of an electric field. Wherein, most of the electrons are emitted to a predetermined position by the gate hole of the grid 150 to realize the function of the field emission cathode structure 100. A portion of the electrons are emitted from the gate hole of the grid 150 and then fall back onto the grid 150 or the conductive layer 160. Since the conductive layer 160 is electrically connected to the grid 150, the conductive layer 160 can be guided away by the conductive layer 160. 'Reducing or avoiding this portion of electrons bombarding the dielectric layer to produce secondary electrons. A small portion of the feron directly raises the dielectric layer 140 such that the dielectric layer 140 emits a second electrical charge and generates a positive charge on the dielectric layer 140. The positive charge can be generated by the conductive layer 160 and the grid 150. The conduction away 'reduces or avoids the dielectric layer 140 accumulating a positive charge, so that the potential around the dielectric layer 140 does not substantially change, thereby reducing the possibility of electrons emitted by the electron emitter diverging around. Therefore, the electrons generated by the field emission cathode structure 1〇〇 according to the embodiment of the present invention are not easily diverged to the periphery, and the direction of electron generation can be well controlled, so that the electrons are concentrated to a predetermined position. Referring to FIG. 4, a second embodiment of the present invention provides a field emission cathode structure 098134057, Form No. A0101, Page 9 of 37, 0982058283-0, 201113924 200, which includes an insulating substrate 2i, a cathode electrode 220, and an electron emission. The unit 230, a dielectric layer 240, a grid 250, a conductive layer 260, and a fixed layer 270. The dielectric layer 240 has a through hole 242, a first surface 244, and a second surface 246. The second surface 246 of the dielectric layer 240 is disposed opposite the first surface 244. [0024] The structure and material of the field emission cathode structure 2〇〇 provided by the embodiment are substantially the same as those of the field emission cathode structure 1〇〇 provided by the first embodiment. The difference is that the grid 250 Directly disposed on the second surface 264 of the dielectric layer 240. The field emission cathode structure 200 further includes the fixed layer 270'. The fixed layer 270 is directly disposed on the surface of the grid 250 away from the dielectric layer 240, that is, the grid 250 is disposed on the fixed layer 270 and the Between the second surfaces 264 of the dielectric layer 240. The conductive layer 260 is disposed directly on the surface of the fixed layer 27 away from the grid 25, that is, the fixed layer 270 is disposed between the grid 250 and the conductive layer 260. [0025] The structure and material of the fixing layer 270 are the same as those of the dielectric layer 240. When a small portion of electrons bombard the fixed layer 270, the fixed layer 270 emits secondary electrons and generates a positive charge at the fixed layer 270, since the conductive layer 260 is disposed on the fixed layer 270 away from the grid. The conductive layer 26 is electrically connected to the grid 250, and the positive charge can be conducted away by the conductive layer 260 and the grid 250, thereby reducing or avoiding the positive charge accumulated by the fixed layer 270, thereby The potential around the pinned layer 270 does not substantially change, thereby eliminating the possibility of electrons emitted by the electron emitter diverging around. [0026] It can be understood that, in this embodiment, the fixed layer 270 may not be provided. The guide 098134057 form number A0101 page 10 / total 37 pages 〇 982 201113924 electrical layer 26 〇 direct "^ set: ^ said _250 The surface is such that the grid 250 is located on the second surface 246 of the conductive layer 260 and the dielectric layer 24, and the mtweo can also function as a solid grid. [0027] See FIG. 5 The third embodiment of the present invention provides a field emission cathode structure 300' including an insulating substrate 31, a cathode electrode 32, an electron emission unit 330, a dielectric layer 34, a grid 35, and a conductive Layer 360. The dielectric layer 34 has a through hole 342, a first surface Ο [0028] 344, and a second surface 346; the second surface 346 of the dielectric layer 34 is disposed opposite to the first surface 344, β: The structure and material of the field emission cathode structure 3〇〇 provided by the embodiment are substantially the same as those of the field emission cathode structure 1〇〇 provided by the first embodiment, except that the conductive layer 36 further The first conductive layer 362 and the second conductive layer 364 are disposed on the second surface 346 of the dielectric layer 340, and the first conductive layer 362 is disposed on the second layer 340. Surface 346 is between the grid 350. The second conductive layer 364 is disposed directly on the surface of the grid 350 away from the first conductive layer 362 such that the grid 350 is disposed between the first conductive layer 362 and the second conductive layer 364. The function of the first conductive layer 362 and the second conductive layer 364 is the same as that of the conductive layer 160 in the first embodiment; in addition, the second conductive layer 364 further has the grid 350 fixed to prevent Or reducing the deformation of the grid 350 during operation. Referring to FIG. 6, a fourth embodiment of the present invention provides a field emission cathode structure 4A including an insulating substrate 410, a cathode electrode 420, an electron emission unit 430, a dielectric layer 440, a grid 450, and a grid. Conductive layer 460 098134057 Form number Α 0101 Page 11 / 37 pages 0982058283-0 [0029] 201113924 and a fixed layer 470. The dielectric layer 440 has a through hole 442, a first surface 444, and a second surface 446. The second surface 446 of the dielectric layer 440 is disposed opposite to the first surface 444. The conductive layer 460 includes a first conductive layer 462 and a second conductive layer 464. [0030] The structure and material of the field emission cathode structure 400 provided by the embodiment are substantially the same as those of the field emission cathode structure 300 provided by the third embodiment, except that the field emission cathode structure 400 further includes The fixing layer 470 is disposed directly on the surface of the grid 450 away from the first conductive layer 462, such that the grid 450 is disposed on the fixed layer 470 and the first conductive layer 462. The fixing layer 470 is used to fix the grid 450 such that the grid 450 is less prone to deformation during operation. The second conductive layer 464 is disposed directly on the surface of the fixed layer 470 away from the grid 450 such that the fixed layer 470 is located between the second conductive layer 464 and the grid 450. [0031] The material of the fixing layer 470 is the same as the material of the dielectric layer 440. The second conductive layer 464 is disposed on the surface of the fixed layer 470 away from the grid 450 to prevent electrons from falling onto the fixed layer 470, so that the fixed layer ti 470 emits secondary electrons, thereby accumulating positive charges and preventing The potential around the fixed layer 470 changes significantly, slowing down the divergence of electrons to the periphery, and better controlling the directivity of the electrons. The first conductive layer 462 is disposed on the second surface 446 of the dielectric layer 440 and functions as the conductive layer 160 in the first embodiment is disposed on the second surface 146 of the dielectric layer 140. Referring to FIG. 7 and FIG. 8 , a fifth embodiment of the present invention provides a field emission cathode structure 500 including an insulating substrate 510 , a plurality of cathode electrodes 520 , a plurality of electron emission units 530 , and a dielectric layer 540 . A plurality of 098134057 Form No. A0101 Page 12 of 37 098205B283-0 201113924 [0033] Ο [0035] Grid 550 and a plurality of conductive layers 560. The material and working principle of the field emission cathode structure 500 provided in this embodiment are substantially the same as those of the field emission cathode structure 100 provided in the first embodiment. The field emission cathode structure 500 provided in this embodiment is similar to the field emission cathode structure 100 provided in the first embodiment, except that the cathode electrode 520, the electron emission unit 530, the grid 550, and the conductive layer 56 in this embodiment are similar. It is a plural. The shape of the cathode electrode 520 is elongated or strip-shaped. The plurality of cathode electrodes 520 are disposed in parallel and spaced apart from each other on the insulating substrate 51, and a plurality of electron-emitting units are evenly distributed on the mother cathode electrode 520. The dielectric layer 540 has a plurality of through holes 542, a first surface, and a second surface 546; the second surface 546 is disposed opposite the first surface. The dielectric layer 540 is disposed on the insulating substrate 510, and the first surface of the dielectric layer 540 is in contact with the insulating substrate 510. The plurality of electron emitting units 530 are spaced apart from the plurality of cathode electrodes 520 and located therewith. The cathode electrodes 520 are electrically connected and arranged in a matrix; the plurality of electron emission units 530 are corresponding to the plurality of through holes 542 of the dielectric layer 540, and each of the electron emission units 530 is disposed in the corresponding through hole 542. Inside. The grid 550 is elongated or strip-shaped and includes a plurality of uniformly distributed grid holes. The plurality of grids 550 are disposed in parallel and spaced apart from each other and are perpendicular to the plurality of cathode electrodes 520. Each grid 550 covers a plurality of through holes 542 of the dielectric layer 540 such that the electron emission unit The electrons emitted by 530 are emitted by the grid 550. 098134057 Form No. 1010101 Page 13 of 37 0982058283-0 201113924 [0036] The plurality of conductive layers 560 are disposed in parallel and spaced apart from each other, and are perpendicular to the plurality of cathode electrodes 520, the plurality of conductive layers The layer 56 is disposed directly on the second surface 546 of the dielectric layer 540 and is electrically insulated from the plurality of electron-emitting units 530 and electrically connected to the grid 550 corresponding to the electron-emitting unit 53A. The positional relationship between each of the conductive layers 560 and the second surface 546 of the dielectric layer 540 is similar to the positional relationship between the conductive layer 160 of the first embodiment and the second surface 146 of the dielectric layer 140. [0037] It can be understood that the cathode electrode, the electron emission unit, the grid, and the conductive layer in the field emission cathode structure provided by the second to fourth embodiments of the present invention may also be plural. [0038] The field emission cathode structure 500 applies different voltages to the cathode electrode 520 and the grid 550, respectively, when applied. Most of the electrons emitted by the electron emitters in the electron-emitting unit 530 on the cathode electrode 520 are emitted to a predetermined position by the gate holes of the grid 55, because the plurality of cathode electrodes 520 are insulated from each other, and a plurality of strips are formed. The grids 55〇 are insulated from each other. Therefore, by selectively applying different voltages between certain cathode electrodes 52() and certain grids 550, electron-emitting units 53 at different positions can be controlled to emit electrons. The addressing function of the field emission cathode structure is achieved to meet its application in field emission displays. Referring to FIG. 7 to FIG. 9 , an embodiment of the present invention provides a field emission display 20 that includes a field emission cathode structure 500 and an anode structure 6 according to a fourth embodiment of the present invention. . The anode structure 600 is maintained at a distance from a plurality of grids 5 5 〇 in the field emission cathode structure 5 q 。 . 098134057 Form No. A0101 Page 14 of 37 0982058283-0 201113924 [0040] The anode structure 600 includes a glass substrate 614, a transparent anode 61 6 disposed on the glass substrate 614, and a fluorescent coating applied to the transparent anode 616 Light layer 618. The anode structure 6 is sealed by an insulating support 620 and an insulating substrate 510 of the field emission cathode structure 5, and the plurality of grids 550 are fixed to the insulating support 62. The transparent anode 616 can be a tin oxide film. [0041] The field emission display 20 applies different voltages to the cathode electrode 520 and the grid 550, respectively, when applied. In general, the cathode electrode 520 is grounded or zero-voltage, and the voltage of the grid 550 is several tens of volts to several hundreds of volts. The electrons emitted from the electron emitters in the electron-emitting unit 530 of the cathode electrode 520 are under the action of an electric field. Movement in the direction of the grid 550 is transmitted through the gate holes of the grid 550. Then, under the action of the electric field between the anode 616 and the grid 55〇, the electron finally reaches the anode structure, bombards the phosphor layer 618 coated on the transparent anode 616, and emits fluorescence to realize the display of the field emission display 20. Features. [0042] Ο Since the plurality of cathode electrodes 520 are insulated from each other and the plurality of grids 55 相互 are insulated from each other, by selectively applying different voltages between the different cathode electrodes 520 and the grid 550, The electron emission unit 530 can be controlled to emit electrons at different positions, and the electrons bombard the phosphor layer 618 at different positions of the anode structure 6〇〇, thereby causing the fluorescent layer 618 at different positions to emit light, so that the field emission display 2 displays different according to needs. The electrons generated by the field emission cathode structure 5〇〇 used in the embodiment are not easily diverged to the periphery, and the emission direction of the electrons can be well controlled, and the light-emitting layer 618 can be concentrated and slammed so that the field emission display 2 {) The displayed image is clear and the effect is good. 098134057 Form No. A0101 Page 15 of 37 0982058283-0 201113924 [0043] Referring to FIG. 1A, an embodiment of the present invention provides a field emission display 3A, which includes a field emission cathode structure. With an anode structure 800. The anode structure 800 includes a glass substrate 814, a transparent anode 816, and a phosphor layer 818. The anode structure 800 is maintained at a fixed distance from the field emission cathode structure 700. [0044] The field emission cathode structure 7A includes an insulating substrate 71A, a plurality of cathode electrodes 720, a plurality of electron emission units 73A, a dielectric layer 74A, a plurality of grids 750, and a plurality of conductive layers 76. 〇 and a fixed layer. The dielectric layer 740 has a plurality of vias 742, a first surface, and a second surface 746. The field emission cathode structure 7 provided in the present embodiment #1 is similar to the field emission cathode structure 2 提供 provided in the first embodiment, except that the cathode electrode 720, the electron emission unit 730, and the grid in this embodiment are different. 750 and the conductive layer 760 are plural. [0045] The field emission display 30 is substantially identical in structure to the field emission display 2, except that the field emission cathode structure 7 is different from the field emission cathode structure 500. Specifically, the field emission cathode structure further includes the fixing layer 770; the fixing layer 77 is directly disposed on a surface of the plurality of grids 750 away from the dielectric layer 740, and the plurality of conductive layers 760 are disposed at the The fixed layer 770 is away from the surface of the grid 75A, and the fixed layer 770 is disposed between the plurality of grids 75A and the plurality of conductive sounds 760. The structural material of the fixed layer 770 is the same as the structure and material of the dielectric layer 74 ;; that is, the fixed layer 770 has a plurality of second through holes, and the plurality of second through holes and the plurality of through holes 742 -correspond. The plurality of peach nets 750 are disposed directly on a surface of the dielectric layer 740 away from the insulating substrate 71 0 . 098134057 Form No. A0101 Page 16 of 37 201113924 [0046] [0048] [0048] [0048] [0048] [0048] [0048] [0048] [0048] [0048] This figure shows that the field emission display 30 does not have multiple conductive layers 760 & effect. Please refer to Fig. 12, which is a display effect of the field emission display unit 30. It can be seen from Fig. 11 and Fig. 12 that the pixel points in the graph " are not blurred, and the pixel of the 112 towel is relatively clear because the field emission display in Fig. 11 does not have multiple conductive layers 76. Underneath, a portion of the electrons will bombard the fixed layer 770 and the dielectric layer 740 and generate secondary electrons, so that the positive and negative potentials of the fixed layer and the dielectric layer μ are changed, thereby causing the electrons to divergence to the periphery, resulting in an increase in electrons. The pixel of the display is relatively ambiguous; the field emission in @12 shows that there are multiple conductive layers in the H3G, and the plurality of conductive layers 76〇 are electrically connected to the plurality of grids 75'. The electrons on the conductive 760' reduce or prevent the fixed layer 770 from generating secondary electrons; the positive charges generated on the fixed layer 77Q can also be led away, so that the potential around the fixed layer 770 does not substantially change, and can be guided away. The partial positive charge generated on the dielectric layer 74 减缓 slows the change of the dielectric layer 74 () off potential: therefore, reduces the possibility of the electron emitter emitting electrons diverging around, and the electrons are concentrated toward the pre-t position, thereby making _use Said field emission display image of the display 30 clearly show qe: better ride. It is to be understood that the plurality of cathode structures 300 or the plurality of cathode structures 4 can also be employed as the apparatus of the present invention. The field emission cathode structure provided by the embodiment of the invention and the field emission display using the field emission cathode structure have the following advantages: first, since the dielectric layer is provided with a conductive layer 'the conductive layer is electrically connected to the grid, The electron emitter emits a part of the electrons falling on the conductive layer, which can be guided away by the conductive layer and the grid. 'Reduce or avoid the part of the electrons as a hitch 098134057 Form No. A0I01 Page 17 / 37 pages 0982058283-0 201113924 The dielectric layer or the fixed layer generates secondary electrons. a small portion of electrons emitted by the second sub-emitter directly bombard the me or f layer such that the dielectric layer or the pinned layer emits two: electrons, and generates a positive charge in the dielectric layer or the fixed layer. The positive charge can be reduced or prevented from accumulating a positive charge on the dielectric layer or the fixed layer by the conductive layer and the conductive layer, so that the potential around the dielectric layer or the fixed layer does not substantially change, thereby reducing electrons. The possibility that the electrons emitted by the emitter diverges to the periphery 'the electrons are concentrated toward the predetermined position', so that the image of the field emission display using the field emission cathode structure is clear and the display effect is good. Third, since the grid is fixed by a conductive layer or a fixed layer [the hinge network is firmly fixed, it is not easy to cause unevenness between the grid and the cathode due to deformation), thereby affecting the uniform emission of the field emission cathode structure. Electron, therefore, the field emission cathode structure is stable and is not easily affected by the external environment. Further, (4) The field emission display structure of the field emission cathode structure is stable and is not easily affected by the external environment. Fourth, since the grid is firmly fixed, even when the distance between the grid steel and the cathode electrode is small, the reading poisoning gyroscope structure does not work due to the electric field force during operation. The action is deformed and the salt cathode and the gate are short-circuited. Therefore, the field emission cathode structure working electric house is easy to control, and the field emission controllability is good, and the image display effect of the field emission display is better. [0049] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the patent application of the present invention is not limited thereto. Anyone who is familiar with this skill will be able to make special effects or changes in accordance with the spirit of the present invention. 098134057 Form No. 1010101 Page 18 of 37 0982058283-0 201113924 shall be covered by the following patent application. [0040] [0055] [0056] [0060] [0060] [0060] FIG. 1 is a field emission in the prior art. Top view of the cathode structure. Figure 2 is a cross-sectional view taken along line H - Π in Figure 1. 3 is a cross-sectional view showing a field emission cathode structure according to a first embodiment of the present invention. FIG. 4 is a cross-sectional view showing a field emission cathode structure according to a second embodiment of the present invention. FIG. FIG. 6 is a perspective view showing a field emission cathode structure according to a fourth embodiment of the present invention. FIG. 7 is an exploded perspective view showing a field emission cathode structure according to a fifth embodiment of the present invention. Figure 8 is a cross-sectional view showing a field emission cathode structure according to a fifth embodiment of the present invention. Figure 9 is a cross-sectional view showing a field emission display using the field emission cathode structure of Figure 8. Figure 10 is a cross-sectional view of a field emission display employing the field emission cathode structure of Figure 4. Fig. 11 is a view showing the display effect of the field emission display of Fig. 10 in the absence of a conductive layer. 098134057 Form No. A0101 Page 19 of 37 0982058283-0 201113924 [0061] FIG. 12 is a schematic diagram showing the display effect of the field emission display of FIG. [Explanation of main component symbols] Field emission cathode structure: 100; 200; 300; 400; 500; 700 [0063] Insulating substrate: 110; 210; 310; 410; 510; 710 [0064] Cathode electrode: 120; 220; 320; 420; 520; 720 [0065] electron emission unit: 130; 230; 330; 430; 530; 730 [0066] dielectric layer: 140; 240; 340; 440; 540; 740 [0067] through hole: First surface: 144; 244; 344; 444; second surface: 146; 246; 346; 446; 546; 746 150; 250; 350; 450; 550; 750· [0071] conductive layer: 160; 260; 360; 460; 560; 760 [0072] first conductive layer: 362; 462 [0073] second conductive layer: 364; 464 [0074] Fixed layer: 270; 470; 770 [0075] Field emission display: 20; 30 [0076] Anode structure: 600; 800 _] Glass substrate: 614; 814 [0078] Transparent anode: 616; 816 [0079] Fluorescent layer: 618; 818 098134057 Form number A0101 Page 20 of 37 0982058283-0 201113924 [0080] Insulation support: 620 〇❹ 098134057 Form number A0101 21 / Total 37 0982058283-0