201112328 晨 VV /Ύ 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種基板之圖案化方法，且特別是有 關於一種含碳基板之圖案化方法。 【先前技術】 含碳基板由於具有高導電性、高強度及可撓性等特 性，近年來逐漸受到重視。若在含碳基板上刻晝電晶體等 φ 電路圖案，而製作成奈米碳管透明導電膜（Transparent Carbon Nanotube-based Thin Film)’ 更可具有多點觸控 之效果。在奈米碳管透明導電膜可以達到85%透光度、 200〇/sq的情況下，已經可以應用於各式電子產品之觸控面 板上。 傳統半導體製程係利用微影、濕蝕刻等製程來形成電 路。然而，含碳基板之耐腐蝕性相當好，使得含碳基板的 圖案化製程相當的複雜且費時。因此，含碳基板的製造成 • 本一直無法有效地下降，而無法廣泛地應用在各式電子產 品0 【發明内容】 本發明係有關於一種含碳基板之圖案化方法，其利用 由含氧之大氣電漿來蝕刻含碳基板，使得含碳基板的圖案 化製程可以增加速率且更加便利。 根據本發明之一方面，提出一種含碳基板之圖案化方 法。含碳基板之圖案化方法包括以下步驟：提供一含碳基 201112328 • ** 4 χ 板於-吊壓下，以-電聚氣體產生一大氣電聚。電聚氣 體通常包含氧氣、氮氣、氬氣及乾淨壓縮空氣（cda)。以 大氣電聚姓刻含碳基板。 為讓本發明之上述内容能更明顯易懂，下文特舉一較 佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 以下係提出一實施例進行詳細說明，實施例僅用以作 為範例說明，並不會限縮本發明欲保護之範圍。此外，實 施例中之圖式係省略不必要之元件，以清楚顯示本發明之 技術特點。 請參照第1圖及第2〜7圖，第1圖繪示一種含碳基 板100之圖案化方法的流程圖，第2〜7圖繪示第1圖之 各步驟之示意圖。 首先，在步驟S102中，如第2圖所示，提供一含碳 基板100。在本實施例中，含碳基板1〇〇係以一奈米碳管 (Transparent Carbon Nanotube-based Thin Film)為例作說明。奈米碳管透明導電膜的光學特性與氧 化姻錫薄 fUndi ⑽ Tin Oxide Film，ITO Film)相近。 並且不米碳f透明導電膜有很高的導電率，因此可以製成 同度透明但又導電的薄膜。所以，奈米碳管透明導電膜可 以應用，顯不器、太陽能電池等需要透明電極的電子裝置 中，或是_用在可撓式電晶體及感應器等光電元件中。 接著，在步驟S104中，如第3圖所示，提供一硬式 遮罩300。硬式遮罩3〇〇具有一鏤空圖案“ο。硬式遮罩 201112328 300之材質可以是金屬、陶瓷或玻璃等無機材料。鏤空圖 案310即為含碳基板1〇〇預定蝕刻之圖案。其中，鏤空圖 案310係貝穿硬式遮罩3〇〇之上表面3〇〇a及下表面3〇〇卜 其中，鏤空圖案310之内侧壁310a係為陡峭側壁，以方 便後續步驟之大氣電漿5〇〇 (繪示於第5圖）穿越。 在步驟S104中，硬式遮罩300之鏤空圖案31〇係以 一機械之方式或一化學方式蝕刻而成，例如是以一雷射加 工而成、一刀具切割或微影餘刻而成。由於鏤空圖案31〇 ❿之内側壁31 係為陡峭側壁，因此在此步驟可以機 械方式來加工製作，而不需要採用射出成型等複雜的方 式。 然後，在步驟S106中，如第4圖所示，將硬式遮罩 300貼附於含碳基板1〇〇之上，鏤空圖案31〇暴露部分之 含碳基板100。硬式遮罩300可以接觸含碳基板丨〇〇亦可 不接觸含碳基板100，端看後續蝕刻製程之精準度。硬式 遮罩300接觸含碳基板1〇〇時，可以一可脫離式黏膠（或 • 膠帶）來固定，或採用機械定位元件等方式來固定。 如上述步驟S104及S106所述，硬式遮罩300之材質 不是半導體製程中所採用之圖案化光阻或圖案化氮化矽 (Silicon Nitride)。並且，在硬式遮罩300移至含碳基 板100之上前，硬式遮罩3〇〇已經形成了鏤空圖案31〇， 硬式遮罩300並不是在貼附於含碳基板1〇〇之上後才形成 鏤空圖案310。 所以，硬式遮罩300之鏤空圖案310的蝕刻製程獨立 完成後’同一片硬式遮罩300可以重複使用於多個含碳基 201112328 1 rv 板 100。 接著，在步驟SI 08中，如第5圖所示，於一常壓下， 以一電聚氣體產生-大氣電毁5〇〇。常壓例如是〆大氣壓 或接近於一大氣壓。 大氣電漿500在成本上具有絕對的優勢。在設備成本 上，大氣電漿500不需使用昂貴及笨重的真空設備。在製 程上，待處理物可以不受真空腔體的限制，並可以進行連 續式的程序。這些特色皆可有效地降低產品的製造成本。 就產生大氣電漿500之電漿氣體的成分而言，電漿氣 體至少包含一氧氣，例如是一純氧氣、一氮氧混合氣體或 一乾淨壓縮空氣（Clean Dry Air，CDA)。 就產生大氣電漿500之裝置而言，大氣電漿goo例如 是由一電弧喷射式（Arc Jet)電漿產生器所產生或一非 熱介電質放電（Dielectric Barrier Discharges，DBD) 電漿產生器所產生。 就大氣電漿500之形式而言，大氣電漿500例如是一 點狀大氣電漿或一線狀大氣電漿。 然後，在步驟S110中’如第6圖所示，以大氣電漿 5〇〇姓刻含碳基板。在餘刻之過程係以硬式遮罩300為遮 蔽物，僅蝕刻暴露於鏤空圖案310之部分的含碳基板1〇〇。 如上所述，本實施例之大氣電漿500例如是點狀或線 狀大氣電漿，所以在蝕刻過程中，大氣電漿5〇〇係以掃瞄 之方式來蝕刻含碳基板100。 由於本實施例之大氣電漿500係由含氧氣之電聚氣 體所產生，所以大氣電漿500中含有氧電漿離子。氧電漿 201112328 i wj^H〇r/\ 離子接觸含碳基板100時，將與含碳基板100產生化學反 應，而形成一反應氣體（例如是二氧化碳）。藉由此化學 反應’即可触刻含碳基板100。所以，本實施例之大氣電 漿500與含碳基板100之間的主要的蝕刻作用是透過乾式 化學反應’而不是透過濕式化學反應或離子轟擊。因此， 本實施例之蝕刻方式不僅具有相當高的蝕刻選擇比，亦具 有相當尚的飯刻速率。 接著’在步驟S112中，如第7圖所示，將硬式遮罩 • 300自含碳基板1〇〇移除。由於硬式遮罩3〇〇不是採用破 壞式方式來移除，且大氣電漿5〇〇也不會蝕刻硬式遮罩 300,所以硬式遮罩300可以重複使用於多個含碳基板1〇〇 的蝕刻步驟。 知上所述，雖然本發明已以一較佳實施例揭露如上， 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者，在不脫離本發明之精神和範圍内，當可作各種 之更動與潤飾。因此’本發明之保護範圍當視後附之申請 鲁 專利範圍所界定者為準。 【圖式簡單說明】 第1圖繪示一種含碳基板之圖案化方法的流程圖；以 及 第2〜7圖繪示第1圖之各步驟之示意圖。 【主要元件符號說明】 100 :含碳基板 3〇〇 :硬式遮罩 201112328BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of patterning a substrate, and more particularly to a method of patterning a carbon-containing substrate. [Prior Art] Carbon-containing substrates have received increasing attention in recent years due to their high conductivity, high strength, and flexibility. When a φ circuit pattern such as a transistor is engraved on a carbon-containing substrate, a Transparent Carbon Nanotube-based Thin Film can be formed to have a multi-touch effect. In the case where the carbon nanotube transparent conductive film can achieve 85% transmittance and 200 〇/sq, it can be applied to the touch panel of various electronic products. Conventional semiconductor processes use processes such as lithography and wet etching to form circuits. However, the corrosion resistance of the carbonaceous substrate is quite good, making the patterning process of the carbonaceous substrate quite complicated and time consuming. Therefore, the production of the carbon-containing substrate has not been effectively reduced, and it cannot be widely applied to various electronic products. [Invention] The present invention relates to a patterning method for a carbon-containing substrate, which utilizes oxygen-containing The atmospheric plasma etches the carbon-containing substrate so that the patterning process of the carbon-containing substrate can increase the rate and is more convenient. According to one aspect of the invention, a patterning method for a carbonaceous substrate is presented. The patterning method of the carbonaceous substrate comprises the steps of: providing a carbon-containing base 201112328 • ** 4 χ plate under - hoisting, generating an atmospheric electricity by electro-convergence gas. The electropolymer gas usually contains oxygen, nitrogen, argon and clean compressed air (cda). The carbon source substrate is engraved with the atmosphere. In order to make the above description of the present invention more comprehensible, the following detailed description of the preferred embodiments and the accompanying drawings will be described in detail below. It is intended to be illustrative only and is not intended to limit the scope of the invention. In addition, the drawings in the embodiments omit unnecessary elements to clearly show the technical features of the present invention. Referring to FIG. 1 and FIG. 2 to FIG. 7 , FIG. 1 is a flow chart showing a patterning method of a carbon-containing substrate 100, and FIGS. 2 to 7 are schematic views showing the steps of FIG. First, in step S102, as shown in Fig. 2, a carbon-containing substrate 100 is provided. In the present embodiment, the carbonaceous substrate 1 is described by taking a Transparent Carbon Nanotube-based Thin Film as an example. The optical properties of the carbon nanotube transparent conductive film are similar to those of the oxidized tin foil (fUndi (10) Tin Oxide Film, ITO Film). Moreover, the non-meter carbon f transparent conductive film has a high electrical conductivity, so that a film which is equally transparent but electrically conductive can be produced. Therefore, the carbon nanotube transparent conductive film can be applied to an electronic device requiring a transparent electrode such as a display device or a solar cell, or used in a photovoltaic element such as a flexible transistor or an inductor. Next, in step S104, as shown in Fig. 3, a hard mask 300 is provided. The hard mask 3〇〇 has a hollow pattern “ο. The material of the hard mask 201112328 300 may be an inorganic material such as metal, ceramic or glass. The hollow pattern 310 is a pattern of a carbon-containing substrate 1 〇〇 predetermined etching. The pattern 310 is made of a hard mask 3〇〇 upper surface 3〇〇a and a lower surface 3, wherein the inner side wall 310a of the hollow pattern 310 is a steep side wall to facilitate the subsequent step of atmospheric plasma 5〇〇 (shown in Figure 5) traversing. In step S104, the hollow pattern 31 of the hard mask 300 is etched mechanically or chemically, for example, by a laser, a cutter The cutting or lithography is engraved. Since the inner side wall 31 of the hollow pattern 31 is a steep side wall, it can be mechanically processed in this step without using a complicated method such as injection molding. Then, in the step In S106, as shown in Fig. 4, the hard mask 300 is attached to the carbon-containing substrate 1〇〇, and the hollow pattern 31 is exposed to the exposed carbon-containing substrate 100. The hard mask 300 can contact the carbon-containing substrate. 〇 can also Contact the carbon-containing substrate 100 to see the accuracy of the subsequent etching process. When the hard mask 300 contacts the carbon-containing substrate, it can be fixed by a removable adhesive (or tape) or by mechanical positioning components. As described in the above steps S104 and S106, the material of the hard mask 300 is not a patterned photoresist or a patterned Nitride used in a semiconductor process. Moreover, the hard mask 300 is moved to include Before the carbon substrate 100, the hard mask 3 has formed a hollow pattern 31〇, and the hard mask 300 does not form the hollow pattern 310 after being attached to the carbon-containing substrate 1。. Therefore, the hard mask After the etching process of the hollow pattern 310 of the cover 300 is completed independently, the same hard mask 300 can be repeatedly used for a plurality of carbon-containing bases 201112328 1 rv boards 100. Next, in step SI 08, as shown in FIG. 5, Under normal pressure, it is produced by an electropolymerized gas - atmospheric electricity is destroyed by 5. The atmospheric pressure is, for example, atmospheric pressure or close to one atmosphere. Atmospheric plasma 500 has an absolute advantage in cost. In terms of equipment cost, atmospheric electricity Pulp 500 does not require the use of expensive and bulky vacuum equipment. In the process, the object to be treated can be free from the vacuum chamber and can be used in a continuous process. These features can effectively reduce the manufacturing cost of the product. In the composition of the plasma gas of the plasma 500, the plasma gas contains at least one oxygen gas, for example, a pure oxygen gas, a nitrogen-oxygen gas mixture gas or a clean compressed air (Clean Dry Air, CDA). In terms of the device, the atmospheric plasma goo is produced, for example, by an Arc Jet plasma generator or by a Dielectric Barrier Discharges (DBD) plasma generator. In the form of atmospheric plasma 500, atmospheric plasma 500 is, for example, a point of atmospheric plasma or a linear atmospheric plasma. Then, in step S110, as shown in Fig. 6, the carbon substrate is engraved with the atmospheric plasma. In the course of the remainder, the hard mask 300 is used as a mask, and only the carbon-containing substrate 1暴露 exposed to a portion of the hollow pattern 310 is etched. As described above, the atmospheric plasma 500 of the present embodiment is, for example, a dot-like or linear atmospheric plasma. Therefore, during the etching process, the atmospheric plasma 5 etches the carbon-containing substrate 100 by scanning. Since the atmospheric plasma 500 of the present embodiment is produced by an oxygen-containing electropolymer gas, the atmospheric plasma 500 contains oxygen plasma ions. Oxygen plasma 201112328 i wj^H〇r/\ When the ion contacts the carbonaceous substrate 100, it will chemically react with the carbonaceous substrate 100 to form a reactive gas (for example, carbon dioxide). The carbon-containing substrate 100 can be engraved by this chemical reaction. Therefore, the main etching action between the atmospheric plasma 500 of the present embodiment and the carbonaceous substrate 100 is through a dry chemical reaction ' rather than through a wet chemical reaction or ion bombardment. Therefore, the etching method of this embodiment not only has a relatively high etching selectivity but also has a relatively good cooking rate. Next, in step S112, as shown in Fig. 7, the hard mask 300 is removed from the carbonaceous substrate 1〇〇. Since the hard mask 3 is not removed in a destructive manner, and the atmospheric plasma 5 does not etch the hard mask 300, the hard mask 300 can be repeatedly used on a plurality of carbonaceous substrates. Etching step. The present invention has been described above in terms of a preferred embodiment, and is not intended to limit the invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a patterning method of a carbonaceous substrate; and Figs. 2 to 7 are schematic views showing the steps of Fig. 1. [Main component symbol description] 100: Carbon-containing substrate 3〇〇: Hard mask 201112328
A T » VI / V 300a 300b 310 : 310a 500 : :上表面 :下表面 鏤空圖案 :内側壁 大氣電漿A T » VI / V 300a 300b 310 : 310a 500 : : Upper surface : Lower surface Hollow pattern : Inner side wall Atmospheric plasma