201112269 六、發明說明： 【發明所屬之技術領域】 ' 本發明係關於一種導電板的製作方法及其製備系統。 【先前技術】 奈米碳管（carbon nanotube，CNT)係一種由碳原子組成 徑為奈米等級之中空管狀物，隨著奈米碳管之長度、直徑及螺= 方式之變化，奈米碳管可呈現出金屬性質或半導體性質^由於= 米碳管之《雜，因此可望在許衫同技術領域巾發揮重要^201112269 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to a method of fabricating a conductive plate and a system for preparing the same. [Prior Art] A carbon nanotube (CNT) is a hollow tubular material composed of carbon atoms with a diameter of nanometer. As the length, diameter and snail of the carbon nanotubes change, the nanocarbon The tube can exhibit metal properties or semiconducting properties. ^ Because the carbon nanotubes are miscellaneous, it is expected to play an important role in the technical field.
由於CNT具有導電性，因此陸續有人嘗試以CNT製作成導臂 膜。以CNT所製作的導電麻言，其製作條件相對製作鋼錫氧^ 物（IndmmTinOxide，ΐτο)等透明導電膜要來的容易，且製作4 本相對其他咖導電絲的健1為透轉魏其光學級穿透 度上的需求，因此以CNT所製作成的翻導龍需要把咖本 身的密度降低，以達成較高的穿透度。目前所使用的方式為：將 =於晶圓(或其他基板)上的CNT叢集，藉由機械力量來將晶圓 心他基板)上的CNT叢集懸空拉伸成一透明狀導電膜。同時使 ^雷射掃描上叙半翻狀導賴，勤f難愧量式的方法 來燃燒-部份的CNT ’細達顺升穿透率的效果。最後再將雷 射處理過後的CNT透明導電膜以微速小心貼到已上膠的基板上， 用以將CNT透明導電膜固定於基板上。 後， 仁疋k種於晶圓(或其他基板)上將⑽拉伸成透明狀導電膜 即先行以雷射處理以提料透率財式的缺點是： 201112269 1.因雷射處理的過程是在懸空狀態下燃燒—部份的cnt，因此 懸工。P伤的CNT面積若是過大，則會受重力影響使製程不穩定， -進而機台的生產速度與良率受到限制因此使㈣空部份的cnt 面積會受到限制。 • 2.田射處理後的CNT透明導電膜會因為CNT密度降低使得其 機械酿也跟著下降’因崎財的微械流都可能造成良率影 響例如·機械動作氣流擾動、熱循環氣流等。 3·由於懸空的CNT透明導電_機觀度脆弱，因此於雷射 #處理時^主意到雷射的能量功率及密度。由於㈣本身無法即時 消政過问的雷射功率所產生之熱能，因此會導致於製程途中 f燒斷，因此限制了生產速度與製程參數範圍，例如：雷射能量不 能過向、雷射掃瞄方向要垂直於CNT等。 【發明内容】 本發明提供—種導電板的製作方法及其製備系統 ，以解決習知 之問題。 # 本發明的其他目的和優點可峨本發明所揭露的技術特徵中 得到進一步的了解。 為了達到上述的目的，本發明之實施例揭露一種導電板的製 作=法，其製備系統。導電板的製作方法包含：首先提供具複數 個奈米單元之—導賴；接著將導賴置於—基材上；以及後處 理已置於基材上之導電膜。 八中不米單元可大致呈一定向排列。導電膜可具電異向性。 奈米單元可為奈米碳管。 V電板製備系統包含一第—供應裝置、—第二供應裝置、一 201112269 結合裝置、一後處理裝置與一帶動裝置。 旦複it供絲置適於供應一基材。第二供應裝置適於供應 複數a早7°之—導電膜。結合裝置適於料麵置於基材上 ‘以形成-複合材。後處理裝置適於後處理複合材= 帶動基材與導麵。 週於 其中基材係由第-供應裳置經由貼合裝置延伸至後處理裝 、置，且導電膜係由第二供應裝置經由貼合裝置延伸至後處理装、置。 根據本發賴揭露之—種導電板的製作方法及其製備系統， #先行將導電膜置於基材上，再對已置於基材上的導電膜進行雷射 等後處理，於此可提升製程的生產速度與良率，且製程參數較易 控制，同時導電膜可以不間斷的大面積導入。 有關本發明的特徵與實作，兹配合圖示作最佳實施例詳細說明 如下。 【實施方式】 根據本發明之導電板的製作方法包含：首先提供具複數個夺 籲料元之-導頓；接著料健置於—基材上；以及後處理已 置於基材上之導電膜。 請參照「第一圖」與「第二圖」。「第一圖」係為本發明第一 具體實施例之導電板的製作方財各步驟的流湖，且「第二圖」 係為本發明第-具體實施例之導電板製備系統示意圖。 於本實施例中’首先提供具複數個奈来單元之導電膜。其中 提供具複數個絲單元之導電朗步驟可包含： 步驟10 :提供一底材； 步驟11 ♦•形成複數個奈米單元於底材上；以及 201112269 步驟12 :拉伸處理該等奈米單元以形成-導電膜。 上述之步驟1〇至步驟12可於第二供應裝置50内完成。第二 供應裝置50包含成縣置51與拉職置52。首先將底材置於 膜裝置51内，底材可係為晶圓、石墨或石英等含㈣料膜 置51可透過電 =電心e diseharg〇、雷射蒸發法（ι· vaporxzauon) (chemical vapor deposition) 式於底材上縣-賴結構。膜層結_佈滿紐，且顧 係為由複數個奈米單S所組成之—集合結。奈米單_如^米 碳管、奈練子等。上述之奈米單元可係為料向性形狀之；米 所謂轉向性形狀之奈米單元係雜上長度與寬度 奈米早兀。 直接;膜層結構後，接著由拉膜裝置52透過機械 直接把力自底材上拉出膜層結構而形成—導電膜。詳言之， 二元中之一奈米單元受到外部拉力而離開底材 == 另一奈米單元會因為與該奈米單元之間 的凡仔瓦力的作用而一併被帶離底材。 時，材上的多個奈米單71中受到外部拉力而離開底材 元以二二=外雜力的奈米單元後會串接域數個奈米單 成具複數個奈米料束的導電膜 早7L束之間係以一定向排列來配置。 來二輪向 =:的/向來配置之奈米單元二== 成具—定拼列配向之導電薄膜具電異向性。在此，所謂 201112269 的電異向性又稱導電異向性或稱電阻抗異向性，係不同方向上具 有不同的導電性質或電阻抗性質之謂。 - 祕材上雜伸出之具複數個奈料元之導麵可於拉伸後 •以捲材方式保存’因此第二供應裝置50可係以捲材方式或以片材 方式提供具複數個奈料元之導電膜。第二供應裝置5〇可為第二 捲材。 w 上述之將導電膜置於基材上的步驟可包含： 步驟13 :提供一基材； 上述之步驟係當第二供縣置5G提供具複數個奈米單; 之導電膜的同時’由第-供應裝置㈤提供基材。基材可為一透日 材質。透明材質基材可包含玻璃基材、高分子透明材質基材。〕 中高分子透明材質基材可為包含有聚甲基丙婦土酸" (Polymethylmethacrylate，PMMA )、聚對苯二甲酸乙二酉 (Polyethylene terephthalate，PET )或聚 尉· ⑽_喊，PC)之基材，，在本發明之基材為高曰= =材質基材之情況下，高分子透明難並不以上述例為限，亦〒 為其他南分子透明材質。其中基材係具可撓性。 材。Ϊ中裝置6〇可係以捲材方式或以片材方式提㈣ 材第一供應裝置60可為第一捲材。 50所H之第Γ供應裝置6〇所提供之基材與上述之第二供應裝置 動其複數個奈米單元之導電膜係由帶動裳置70所帶 ，罢基材與導f職帶練置7G先行帶動合裝置心由社合 裝置8〇將導電膜置於基材上以形成一複合材。其中社人裝置°8〇 ==^_來帶_綱_合，亦可係透過機 置放導電祕基材上峨紐與導電麟結合等方式。 201112269 上述之將導電膜置於基材上的步驟更可包含： 步驟14 :提供一膠體；以及 步驟15 :利用膠體使導電縣載於基材上。Since CNTs are electrically conductive, attempts have been made to fabricate CNTs into a guide arm film. It is easy to produce a transparent conductive film such as Indmm Tin Oxide (ΐτο), and the production of four transparent conductive films such as Indmm Tin Oxide (ΐτο) is easy to produce. The requirement for optical grade penetration, therefore, the fused dragon made of CNT needs to reduce the density of the coffee itself to achieve higher penetration. The current method is to use CNT clusters on a wafer (or other substrate) to mechanically force the CNT clusters on the wafer core substrate to be suspended into a transparent conductive film. At the same time, the laser scanning method is a semi-turning method, and it is difficult to burn a part of the CNT's effect to achieve a smooth penetration rate. Finally, the laser-treated CNT transparent conductive film is carefully attached to the sized substrate at a slight speed to fix the CNT transparent conductive film on the substrate. After that, the disadvantages of stretching the film into a transparent conductive film on the wafer (or other substrate), that is, the laser treatment to increase the throughput rate, are: 201112269 1. The process of laser processing It is burning in the suspended state - part of the cnt, so it is suspended. If the area of the CNT damaged by P is too large, the process will be unstable due to gravity, and thus the production speed and yield of the machine will be limited, so that the cnt area of the (4) empty portion will be limited. • 2. The CNT transparent conductive film after the field treatment will cause the mechanical brewing to decrease due to the decrease in the density of the CNTs. The growth of the micro-mechanical flow may cause yield effects such as mechanical motion airflow disturbance and thermal circulation airflow. 3. Due to the fragile CNT transparent conductivity _ machine view, the laser energy and density of the laser are considered during laser processing. Because (4) the thermal energy generated by the laser power that cannot be immediately ignored by the government itself, it will cause the f to be blown during the process, thus limiting the production speed and the range of the process parameters, for example, the laser energy cannot be over-steered, and the laser sweep The aiming direction is perpendicular to the CNTs and the like. SUMMARY OF THE INVENTION The present invention provides a method of fabricating a conductive plate and a system for preparing the same to solve the conventional problems. Other objects and advantages of the present invention will be further understood from the technical features disclosed herein. In order to achieve the above object, embodiments of the present invention disclose a fabrication method of a conductive plate, a preparation system thereof. The method for fabricating the conductive plate comprises first providing a plurality of nano-units; then placing the guide on the substrate; and thereafter treating the conductive film that has been placed on the substrate. The eight medium-sized units can be arranged in a certain direction. The conductive film can be electrically anisotropic. The nano unit can be a carbon nanotube. The V electric board preparation system comprises a first supply device, a second supply device, a 201112269 combination device, a post-processing device and a driving device. The wire is placed to supply a substrate. The second supply means is adapted to supply a plurality of conductive films a plurality of times a. The bonding device is adapted to be placed on the substrate to form a composite. The aftertreatment device is suitable for post-treatment of composites = driving the substrate and the guide surface. The substrate is extended from the first supply to the post-treatment device via the bonding device, and the conductive film is extended from the second supply device to the post-treatment device via the bonding device. According to the method for fabricating a conductive plate and the preparation system thereof disclosed in the present invention, the conductive film is placed on the substrate first, and then the conductive film placed on the substrate is subjected to laser and other post-treatment. The production speed and yield of the process are improved, and the process parameters are easier to control, and the conductive film can be introduced in a large area without interruption. The features and implementations of the present invention are described in detail with reference to the preferred embodiments. [Embodiment] The method for fabricating a conductive plate according to the present invention comprises: first providing a plurality of materials for the material of the material; and then placing the material on the substrate; and pretreating the conductive material that has been placed on the substrate. membrane. Please refer to "First Picture" and "Second Picture". The "first figure" is a flow lake for each step of the fabrication of the conductive plate of the first embodiment of the present invention, and the "second figure" is a schematic view of the conductive plate preparation system of the first embodiment of the present invention. In the present embodiment, a conductive film having a plurality of nano-units is first provided. The step of providing a plurality of filament units can include: Step 10: providing a substrate; Step 11 ♦ forming a plurality of nano-units on the substrate; and 201112269 Step 12: Stretching the nano-units To form a conductive film. The above steps 1 to 12 can be completed in the second supply device 50. The second supply unit 50 includes a Cheng County 51 and a pull position 52. First, the substrate is placed in the membrane device 51, and the substrate can be made of wafer, graphite or quartz, etc. (4) film 51 can be transmitted through electricity = electric core e diseharg〇, laser evaporation method (ι·vaporxzauon) (chemical Vapor deposition) on the substrate on the county-Lai structure. The film layer is covered with a button, and the film is composed of a plurality of nano-singles S. Nano single _ such as ^ m carbon tube, nai practice and so on. The above-mentioned nano-units may be of a material-oriented shape; the so-called steerable shape of the nano-units has a length and a width of nanometers. Immediately after the film structure, the film is then pulled from the substrate by the film pulling device 52 to directly pull the film from the substrate to form a conductive film. In detail, one of the binary units is subjected to external tension and leaves the substrate. == Another nano unit is taken away from the substrate due to the effect of the square force between the nano unit and the nano unit. . At the time, the plurality of nanosheets 71 on the material are subjected to external pulling force and leave the substrate element to have a second unit of external force, and then the nano unit is connected in series to form a plurality of nanometers with a plurality of nano bundles. The conductive film is arranged in a certain direction between the 7L bundles. The second phase of the =: / / the configuration of the nano unit 2 = = forming - the alignment of the conductive film with electrical anisotropy. Here, the electrical anisotropy of 201112269 is also called conductive anisotropy or electrical anisotropy, and has different conductive properties or electrical impedance properties in different directions. - The guide surface of the plurality of materials can be stored after the stretching. • The second supply device 50 can be provided in the form of a coil or a sheet. The conductive film of the material element. The second supply device 5〇 can be a second web. The step of placing the conductive film on the substrate may include: Step 13: providing a substrate; the above step is when the second source is provided with 5G to provide a plurality of nano sheets; The first supply means (five) provides a substrate. The substrate can be a day through material. The transparent material substrate may include a glass substrate or a polymer transparent material substrate. 〕 Medium polymer transparent material substrate can contain Polymethylmethacrylate (PMMA), Polyethylene terephthalate (PET) or Poly (T) (10) _ shout, PC) In the case of the substrate of the present invention, when the substrate of the present invention is a high substrate = material substrate, the polymer transparency is not limited to the above examples, and is also a transparent material of other southern molecules. The substrate is flexible. material. The middle device 6 can be rolled or fed (4). The first supply device 60 can be the first roll. The substrate provided by the 50th Γ supply device 6〇 and the second supply device of the above-mentioned second supply device are driven by the plurality of nano-units, and the substrate is driven by the skirt 70. The 7G is first brought to the center of the device, and the conductive film is placed on the substrate to form a composite material. Among them, the social device installation is 8 〇 ==^_ to bring the _ _ _ combination, or it can be placed on the conductive secret substrate through the machine and the conductive lining. 201112269 The above step of placing the conductive film on the substrate may further comprise: Step 14: providing a colloid; and Step 15: using a colloid to carry the conductive county on the substrate.
所述之乂驟14可係為基材的表面係已事先附著一黏著物例 如黏膠等’亦可是透過—上職置90透過塗佈、滴定等方式在基 材上形成賴。龍可依_方式之不同選湖光膠、熱固 化膠或光·熱11]化膠。所謂的細化膠指會受特定波段的光線照射 而固化的膠體，例如是紫外線硬化膠（uitraviQiet _)，而所謂的 熱固化膠眺會在某特定溫度細以上的環境巾而固化的膠體， 而所=的光熱IU化糊指需要在某特定溫度範圍以上的環境中， 同時受特定波長的光_射_化的膠體。此外，膠體亦可 具導電性之膠體，例如是導電高分子膠。 其中上膠裝置90係位於第一供應裝置60與結合裝置8〇之 :。=此’步驟is係透過結合來使基材與導賴的結合， 於土材上具有黏著物或膠體，因此可將導電顧定於基 形成一褶合；I?!·。 置100 於基材上之導電蘭步驟係透過後處理3 式被+ + & H所叙後處理包含諸處理、固化處s 基财躺第—供麟置6㈣由貼合華 經由崎置 其中後處理已置於紐上之導電膜的步驟包含： 步驟16:雷射處理已置材上之導電膜；以及 步驟17 :固化膠體。 所述之步驟I6係透過後處理裝置來對基材上之導電膜進 201112269 行雷射處理。其中雷射處理可係將雷射以大致垂直於導電膜内之 奈米單凡束或奈米單元之定向排列的方向來回進行加熱、燒斷等 处理方式，用以提向導電膜的透光度。雷射處理亦可係將雷射以 大致平行於導電動之奈料元束料元之定向制的方向 來回進行加熱、韻理方式，用以提高導電朗電異向性。 、於上述之步驟16之後，後處理裝置可接續進行步驟17，亦即 視膠體的種類而進行相應的固化膠體的作動。舉例而言，當膠體 為光固化膠時’則轉定波段的光線照射㈣翻化；當^體為 熱固化膠時’驗膠體放置於某特定溫度範_上的環境使膠體 固化；當膠體為光-熱固化膠時，則將膠體放置於某特定溫度範圍 以上的環境並以特定波段的光線照射之，使膠體固化。 請參照「第三圖」與「第四圖」，並合併參照前述具體實施例。 第二圖」係為本發明第二具體實施例之導電板的製作方法中各 步驟的流賴4「第賴」係為本發明第二具體實施例之 板製備系統示意圖。 於本實施财’首先提供具複數個奈料元之導電膜。盆中 提供具複數個奈米單元之導電膜的步驟可包含： 、/、 步驟20:提供一底材； 步驟21 :形成複數個奈米單元於底材上；以及 步驟22 . μ複數個奈米單元於—溶劑以形成—混合物。 上述之步驟2G與前述實施例之步驟ig大致拥，且步㈣ 與别述實施例之步職大致_，在此不作贅述。 戲所^Γ22齡於絲上形成具減個奈料元之膜層結 ，後，可触刀㈣_方式贿數辦料元 混入溶劑中以形成具禮數個太半„— A t 队呆亚 不未早7G之混合物。其中溶劑可為導 201112269 電膠或向分子膠等。由於奈米單元具導電性 米单元之混合物亦具導電性，其混合斗 電膜。分佈裝置110係具有該混合物。 平70丹等電性，因此具有複數個奈 其混合物所形成之薄膜狀可視為導 . 上述之將導電膜置於基材上的步驟可包含： 步驟23 :提供一基材； 上述之步驟23係在分佈裝置11〇具有該混合物的同時，由第 •:供應裝置ω提供基材。其中基材與前述實施例相同，在此不作 贅述。 • 上述之第一供絲置60所提供之基材係由帶動裝置7〇所帶 動。 上述之將導電膜置於基材上的步驟更可包含： 步驟24 :將該混合物置於該基材上。 上。分佈裝置11G將前述之混合物置於基材上的方式可透過塗佈、 滴定等方式。其中分錄置_係位於苐-供縣置60與後處理 裝置100之間。於此，The step 14 may be such that the surface of the substrate has been adhered to an adhesive such as a glue, etc., or it may be formed on the substrate by a through-position 90 coating, titration or the like. The dragon can choose the lake glue, the heat curing glue or the light and heat 11] according to the different methods. The so-called refining gel refers to a colloid that is cured by the irradiation of light of a specific wavelength band, for example, a UV curable rubber (uitraviQiet _), and a so-called thermosetting capsule which is solidified by an environmental towel which is finer than a certain temperature, The photothermal IU of the = is defined as a colloid that needs to be exposed to light of a specific wavelength while being in a certain temperature range or higher. In addition, the colloid may also be a conductive colloid, such as a conductive polymer glue. The gluing device 90 is located at the first supply device 60 and the bonding device 8 . = This step is a combination of the substrate and the guide by means of bonding, and has an adhesive or a gel on the soil material, so that the electrical conductivity can be formed on the base to form a fold; I?!. The conductive blue step on the substrate is passed through the post-treatment. The type is treated by + + & H. The post-treatment includes the treatment, the solidification s, the base lie, and the lining 6 (4). The step of post-treating the conductive film that has been placed on the button includes: Step 16: Laser treating the conductive film on the substrate; and Step 17: curing the colloid. The step I6 is performed by using a post-processing device to perform a laser treatment on the conductive film on the substrate. The laser treatment may be performed by heating and blowing the laser in a direction substantially perpendicular to the orientation of the nano-beam or the nano-unit in the conductive film to improve the light transmission to the conductive film. degree. The laser processing may also be performed by heating and rhythmically rotating the laser in a direction substantially parallel to the orientation of the conductive moving element beam element to improve the electrical conductivity anisotropy. After the above step 16, the post-processing device can continue to perform step 17, that is, the corresponding solidified colloid is actuated depending on the type of the colloid. For example, when the colloid is a light-curing adhesive, the light in the delimiting band is irradiated (4); when the body is a thermosetting glue, the colloid is placed in a certain temperature range to cure the colloid; when the colloid is cured; In the case of a light-thermosetting adhesive, the colloid is placed in an environment above a certain temperature range and irradiated with light of a specific wavelength band to cure the colloid. Please refer to "Third Diagram" and "Fourth Diagram", and refer to the foregoing specific embodiments in combination. The second diagram is a schematic diagram of the steps of the method for fabricating the conductive plate according to the second embodiment of the present invention. In the present implementation, a conductive film having a plurality of nanomaterials is first provided. The step of providing a conductive film having a plurality of nano units in the basin may include: , /, step 20: providing a substrate; step 21: forming a plurality of nano units on the substrate; and step 22. μ plural The rice unit is in a solvent to form a mixture. The above-mentioned step 2G is roughly the same as the step ig of the foregoing embodiment, and the step (4) and the step-by-step of the other embodiments are not described herein. The theater is 22 years old to form a film layer with a reduced material element. After that, the knife can be touched (4) _ way to collect the amount of material into the solvent to form a gift number too much „—A t 队亚亚The mixture may not be as early as 7G. The solvent may be 201112269 electro-adhesive or molecular glue, etc. Since the mixture of nano-unit conductive rice units is also electrically conductive, it mixes the electric film. The distribution device 110 has the mixture. The flat film is isoelectric, so that the film formed by the mixture of a plurality of layers can be regarded as a guide. The step of placing the conductive film on the substrate may include: Step 23: providing a substrate; The substrate is provided by the first: supply device ω while the distribution device 11 is provided with the mixture. The substrate is the same as the foregoing embodiment, and will not be described herein. • The first wire supply 60 described above is provided. The substrate is driven by the driving device 7. The step of placing the conductive film on the substrate may further comprise: Step 24: placing the mixture on the substrate. The distribution device 11G places the mixture On the substrate Over-coating, titration, etc., wherein the entry _ is located between the 苐-Suxian 60 and the post-processing device 100. Here,
所述之步驟24係由分佈裝置11〇將前述之混合物置於基材 衣直之間。於此， • 物置於基材上以形成一複合材。 上述之後處理已置於基材上之導電麟步驟係透過後處理裝 置1⑻來後處理複合材。所述之後處理包含雷射處理、固化處理 或裁切處理祕程。其巾基材可係由第—供應裝置⑻延伸至後 理裝置100。 根據本發日綺揭露之—種導電板的製作方法及其製備系統， =行將導電職材上，雜已置於紐上料韻進行雷射 、、後處理於此可提升製程的生產速度與良率，且製程參數較易 控制’同時導魏可以不間斷的大面積導入。 11 201112269 雖然本發明以實施例揭露如上，然其並非用以限定本發明， 任何所屬技術領域中具有通常知識者，在不脫離本發明之^神和 .範_，當可作些許之更__，因此本發明之倾範圍當視 •後附之申請專·圍所界定者轉。另外，本發明的任一^施 .例或申請專利制不須達成本發明所揭露之全部目的或優點 或特點。此外，摘要部分和標題僅是用來辅助專利文件搜尋之 用’並非用來限制本發明之權利範圍。 • 【圖式簡單說明】 第-圖係為本發明第—具體實施例之導電 步驟的流程圖； μ Μ各 第二圖係為本發明第—具體實施例之導電板製備系統示意 導電板的製作方法中 第二圖係為為本發明第二具體實施例之 各步驟的流程圖；以及The step 24 is performed by the distribution device 11 置于 placing the aforementioned mixture between the substrates. Here, the object is placed on a substrate to form a composite. The above-described subsequent processing of the conductive lining step on the substrate is carried out through the post-treatment device 1 (8) to post-treat the composite. The subsequent processing includes a laser processing, a curing process, or a cutting process. The towel substrate can be extended from the first supply means (8) to the backup unit 100. According to the method for preparing a conductive plate and the preparation system thereof disclosed in the Japanese version, the conductive material is placed on the conductive material, and the laser has been placed on the material for laser processing, and the post-treatment can improve the production speed of the process. With the yield, and the process parameters are easier to control 'simultaneously, the Wei can be introduced in a large area without interruption. 11 201112269 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make a little more without departing from the invention. _, therefore, the scope of the invention is changed as defined by the application of the application. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any of the embodiments of the present invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents, and are not intended to limit the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart of a conductive step of a first embodiment of the present invention; FIG. 2 is a schematic diagram of a conductive plate of a conductive plate preparation system according to a first embodiment of the present invention. The second diagram in the manufacturing method is a flowchart of the steps of the second embodiment of the present invention;
第四圖係為本發明第一具體實施例之導 圖。 電板製備系統示意 第二供應裝置 成膜裴置 拉膜裝置 第一供應裝置 帶動裝置 結合裝置 上膠裝置 後處理裝置 【主要元件符號說明】 一 50 51 52 60 70 80 90 100 12 201112269 110 分佈裝置 50 第二供應裝置 51 成膜裝置 710 第二基板 720 第二膠體 730 第二導電薄膜 740 第二導電材 AA， 剖面線 D 線距 d 線λ*The fourth figure is a map of the first embodiment of the present invention. The electric plate preparation system is illustrated as a second supply device, a film forming device, a film pulling device, a first supply device, a driving device, a device, a gluing device, a post-processing device, a main component symbol description, a 50 51 52 60 70 80 90 100 12 201112269 110 50 second supply device 51 film forming device 710 second substrate 720 second colloid 730 second conductive film 740 second conductive material AA, section line D line spacing d line λ*
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