201117430 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種白光半導體發光元件(white light semiconductor light-emitting device)，特別是關於一種具有濾 光層(filtering layer)之高效率白光半導體發光元件。 【先前技術】 半導體發光元件(例如’發光二極體(nght_emitting diode, LED))係一類相當重要的固態元件(5〇1记state device)，其將電 能轉換成光。一典型的半導體發光元件通常包含一層或更多 層由半導體材料製成的發光層(light-emitting layer)，並且像三 明治似地夾在相反摻雜型態的層之間。當一偏壓被施加通過 上述摻雜層時，電洞與電子被注入發光層内，電洞與電子在 發光層内再結合進而產生光。光從發光層朝全方向發射，並 且從半導體發光元件的所有表面發射出去。有用的光通常是 朝向該半導體發光元件的出光面所發射的光。 傳統LED的一項缺點就是它們不能從它們的發光層產生 白光。讓傳統的LED產生白光的方法之一，即是將從不同種 LED所發的不同色光混光成白光。例如，從紅光、綠光及藍 光LED發光元件所發出的光，或者從藍光及黃光LED件所 發出的光，可以被混光進而產生白光。此種方法的缺點之一 即是它需要用到多種LED以產生單一顏色的光，明顯地增加 了成本。除此之外，不同顏色的光通常係由不同型態的led 所產生，要將這些LED結合成一個元件必須需要複雜的製程 來達成。上述元成的元件因為不同的二極體型態必須要不同 的控制電壓’也必須需要複雜的控制電路。這些元件的長波 長以及穩定性也會由於不同型態led的不同時效行為而劣 Γ 3 H980603(6HLTGA/200901TW) 201117430 化。 近來，已經藉由用混入透明封裝材料(例如，環氧樹脂或 矽膠)内的黃色光螢光粉(phosphor)、高分子(polymer)或染料 (dye)，等波長轉換材料(wavelength conversion material)環繞， 來將從藍光單晶片LED所發出的光轉換成白光。此種方法的 相關先前技術請參考美國專利第5,813,753號、美國專利第 5,959,316號以及美國專利第6,〇69,440號。這些環繞的波長 轉換材料將LED所發出之部分光的頻率向下轉換(再次發出 的光具有較低的頻率），進而改變其顏色。例如，如果一顆氮 化物基的藍光LED被黃色螢光粉環繞，其所發出的部分藍光 將穿過螢光粉沒被改變，而剩餘的光將被向下轉換成黃光。 上述案例巾的LED將發出的藍光與由螢光粉轉換成的黃光結 合，進而產生白光。此種類型的白光發光二極體製作容易且 生產成本也較低，因此目前市面上之白光發光二極體大多為 此義型。此外，已有將螢光粉被覆在發光二極體晶片的出 光面上土’已取代將螢光粉混人封裝材料内的技術被提出， 相關先前技術請參考美國專利公開號第2〇〇8〇2〇341〇號。 廿―亡i^利用晶片本身所發出的藍光與由螢光粉所轉換成的 頁光混光成白光的LED ’其面臨晶片發出的藍光在晶片的出 光面發生全反射(total reflection)，而無法發射出去。以往大多 利用對LED晶片#出光面施以表面粗化來克服全反射。此種 方法的相關先前技術請參考美國專利第6,277,665號、美國專 利第6,429,460號以及美國專利第6,441，4〇3號。這些表面粗 化的先前技術大多需藉由軸製程來達成，因此，製程上較 ，耗時’而且LED晶的出光面的祕度較難控制達到全面 1勻。此外’由螢光粉所發出的黃光也是朝全方向發射，因 t 4刀只光會射人LED晶片而被LED晶片吸收，進而降 氏LED整體的發光效率。目前尚未見到既可克服藍光BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a white light semiconductor light-emitting device, and more particularly to a high efficiency white light semiconductor light emitting device having a filtering layer. element. [Prior Art] Semiconductor light-emitting elements (e.g., 'nght-emitting diodes (LEDs)) are a class of relatively important solid-state devices (5 〇 state devices) that convert electrical energy into light. A typical semiconductor light-emitting element typically comprises one or more layers of a light-emitting layer made of a semiconductor material and sandwiched between layers of oppositely doped forms. When a bias voltage is applied through the doped layer, holes and electrons are injected into the light-emitting layer, and the holes and electrons are recombined in the light-emitting layer to generate light. Light is emitted from the luminescent layer in all directions and is emitted from all surfaces of the semiconductor light emitting element. Useful light is typically light that is emitted toward the light exiting surface of the semiconductor light emitting element. A disadvantage of conventional LEDs is that they do not produce white light from their luminescent layers. One of the methods for making conventional LEDs produce white light is to mix different colors of light emitted by different kinds of LEDs into white light. For example, light emitted from red, green, and blue LED light-emitting elements, or light emitted from blue and yellow LEDs, can be mixed to produce white light. One of the disadvantages of this approach is that it requires the use of multiple LEDs to produce a single color of light, which adds significant cost. In addition, different colors of light are usually produced by different types of LEDs. To combine these LEDs into one component, a complicated process is required. The above-mentioned components must have different control voltages because of different diode types. A complicated control circuit must also be required. The long wavelength and stability of these components are also inferior due to the different ageing behavior of different types of LEDs. 3 H980603(6HLTGA/200901TW) 201117430. Recently, a wavelength conversion material such as a yellow light phosphor, a polymer, or a dye mixed in a transparent encapsulating material such as epoxy resin or silicone resin has been used. Surround, to convert light emitted from a blue single-chip LED into white light. For a related prior art of such a method, reference is made to U.S. Patent No. 5,813,753, U.S. Patent No. 5,959,316, and U.S. Patent No. 6, 〇69,440. These surrounding wavelength conversion materials downconvert the frequency of the portion of the light emitted by the LED (the re-emitted light has a lower frequency), which in turn changes its color. For example, if a nitrogen-based blue LED is surrounded by yellow phosphor, part of the blue light emitted by it will pass through the phosphor without being altered, and the remaining light will be converted down to yellow. The LED of the above case towel combines the blue light emitted by the LED with the yellow light converted by the phosphor powder to generate white light. This type of white light-emitting diode is easy to manufacture and has a low production cost. Therefore, most of the white light-emitting diodes currently on the market are of this type. In addition, a technique has been proposed in which the phosphor powder is coated on the light-emitting surface of the light-emitting diode wafer, and the technique of replacing the fluorescent powder in the packaging material has been proposed. For related prior art, please refer to US Patent Publication No. 2 8〇2〇341〇.廿 亡 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Unable to launch. In the past, the surface of the LED wafer # is slightly roughened to overcome total reflection. For a prior art of such a method, reference is made to U.S. Patent No. 6,277,665, U.S. Patent No. 6,429,460, and U.S. Patent No. 6,441,4,. Most of these prior art surface roughening needs to be achieved by the axial process. Therefore, the process is relatively time consuming and the secret of the light exiting surface of the LED crystal is difficult to control. In addition, the yellow light emitted by the phosphor powder is also emitted in all directions. Because the t 4 knife only emits the LED chip and is absorbed by the LED chip, the overall luminous efficiency of the LED is lowered. Not yet seen to overcome both blue light
LED 4 H980603(6HUGA/200901TW) 201117430 晶片之出光面對藍光造成的全反射，也可降低黃光被LED晶 片吸收的技術被提出。 因此，本發明之主要範疇在於提供一種具有濾光層之白 光半導體發光元件，以解決上述問題，進而提升白光半導體 發光元件整體的發光效率。 【發明内容】 根據本發明之一較佳具體實施例之白光半導體發光元 件其包έ半導體疊層(semiconductor multi-layer)、一遽光 層、一透明封裝材料以及一波長轉換材料。該半導體疊層包 含一發光層。該發光層能被一電流激發，以發射一藍光波段 的光。該半導體疊層具有-出光面。該遽光層係形成於該半 導體疊層之該出光面上。該透明封裝材料係包覆該半導體疊 ，以及該濾光層。該波長轉換材料係均勻地分佈於該透明封 裝材料内或被覆於賊光層上。該波長轉換材料吸收該藍光 波段的光之一部分再行發射一黃光波段的光。特別地，該濾 光層能讓碰光波段的光通過並反_黃光波段的光。該^ 光波&的光與該黃光波段的光進而混成白光。 々於一具體實施例t，該濾光層係由一第一材料層以及一 第二材料敎互堆疊成-多層複合材料層。該第—材料層可 、Tl3〇5、Y2〇3、Hf〇2、Ta2〇5 或 ΖΓ〇2 所形成。該第 一材料層可以由Si02、MgF2、Na3AF6或Al2〇3所形成。 關於本發明之優點與精神可以藉由以下的發明詳述及所 附圖式得到進一步的瞭解。 【實施方式】 請參晒-，圖-繪示根據本發明之一較佳體實施例之 H980603(6HUGA/200901TW) 5 201117430 白光半導體發光元件1之截面視圖。 如圖一所示，該白光半導體發光元件丨包含一半導體疊 層10、一濾光層12、一透明封裝材料14以及一波長轉換材 料16。 同樣示於圖一，如同典型的半導體發光元件，該白光半 導體疊層10包含一基材(substrate)1〇2以及在該基材1〇2上形 成的多層磊晶層。實務上，該基材102可以是玻璃(si〇2)、矽 (Si)、鍺(Ge)、氮化鎵(GaN)、砷化鎵(GaAs)、磷化鎵(GaP)、 氮化鋁(A1N)、藍寶石(sapphire)、尖晶石(spinnel)、三氧化二 銘(Al2〇3)、碳化矽(SiC)、氧化鋅(ZnO)、氧化鎂(MgO)、二氧 化链銘（LiAl〇2)、二氧化鋰鎵(LiGa〇2)或四氧化鎂二鋁 (MgAl204)，等供磊晶用的基材。 該半導體疊層10之多層磊晶層包含一發光層104。該發 光層104能被一電流激發，以發射一第一光。於一具體實施 例中，該發光層104係由一 II-VI族化合物或一 III-V族化合 物所形成。圖一所示案例，該發光層1〇4為GaN基的發光層 (GaN-based light-emitting layer)，能被一電流激發，以發射藍 光波段的光BL。於一具體實施例中，上述藍光波段的光之波 長範圍係介於445〜475nm 〇 如圖一所示，該半導體疊層10具有一出光面108。圖一 所示案例’該半導體疊層10並且包含形成在多層磊晶層上之 透明導電層106(例如，ITO層或ZnO層）。提供該半導體疊層 10之出光面108者即為該透明導電層106。於實際應用中， 提供該半導體疊層1〇之出光面丨〇8者也可能是多層磊晶層的 頂表面。 同樣示於圖一，該濾光層12係形成於該半導體疊層1〇 6 H980603(6HUGA/200901TW) 201117430 別地，光層12之組成與結構係設 U讓，向j先層12之藍光波段的光穿透該濾光層12。 發光層⑽所發出的藍光波段的光肌 如圖-所示，該半導體疊層1G並且包含兩㈣極Μ。LED 4 H980603 (6HUGA/200901TW) 201117430 The technique of reducing the total absorption of yellow light by the blue crystal is also proposed. Accordingly, it is a primary object of the present invention to provide a white light semiconductor light-emitting element having a filter layer to solve the above problems and further improve the light-emitting efficiency of the white light-emitting semiconductor light-emitting element as a whole. SUMMARY OF THE INVENTION A white light semiconductor light emitting device according to a preferred embodiment of the present invention comprises a semiconductor multi-layer, a phosphor layer, a transparent encapsulant, and a wavelength converting material. The semiconductor stack includes a light emitting layer. The luminescent layer can be excited by a current to emit light in a blue band. The semiconductor laminate has a light exiting surface. The light-emitting layer is formed on the light-emitting surface of the semiconductor laminate. The transparent encapsulating material covers the semiconductor stack and the filter layer. The wavelength converting material is uniformly distributed within the transparent encapsulant or overlying the thief light layer. The wavelength converting material absorbs a portion of the light in the blue band and emits light in a yellow band. In particular, the filter layer allows light in the light-carrying band to pass through the light in the anti-yellow band. The light of the light wave & and the light of the yellow light band are further mixed into white light. In a specific embodiment t, the filter layer is formed by stacking a first material layer and a second material layer into a multi-layer composite material layer. The first material layer may be formed by Tl3〇5, Y2〇3, Hf〇2, Ta2〇5 or ΖΓ〇2. The first material layer may be formed of SiO 2 , MgF 2 , Na 3 AF 6 or Al 2 〇 3 . The advantages and spirit of the present invention will be further understood from the following detailed description of the invention. [Embodiment] Referring to the drawings, a cross-sectional view of a white light semiconductor light-emitting element 1 according to a preferred embodiment of the present invention is shown. As shown in FIG. 1, the white light semiconductor light emitting device 丨 includes a semiconductor stack 10, a filter layer 12, a transparent encapsulating material 14, and a wavelength converting material 16. Also shown in Fig. 1, like a typical semiconductor light emitting device, the white light semiconductor laminate 10 comprises a substrate 1〇2 and a plurality of epitaxial layers formed on the substrate 1〇2. In practice, the substrate 102 can be glass (si〇2), germanium (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum nitride. (A1N), sapphire, spinel, Al2O3, SiC, Zinc Oxide (ZnO), Magnesium Oxide (MgO), Dioxide Chain (LiAl) 〇2), lithium gallium dioxide (LiGa〇2) or magnesium aluminum oxide (MgAl204), etc. for the substrate for epitaxy. The multilayer epitaxial layer of the semiconductor stack 10 includes a light emitting layer 104. The light emitting layer 104 can be excited by a current to emit a first light. In one embodiment, the luminescent layer 104 is formed from a Group II-VI compound or a Group III-V compound. In the case shown in Fig. 1, the light-emitting layer 1〇4 is a GaN-based light-emitting layer that can be excited by a current to emit light BL in the blue-light band. In one embodiment, the wavelength range of the light in the blue light band is between 445 and 475 nm. As shown in FIG. 1, the semiconductor stack 10 has a light exiting surface 108. The semiconductor laminate 10 of the example shown in Fig. 1 and comprises a transparent conductive layer 106 (e.g., an ITO layer or a ZnO layer) formed on a plurality of epitaxial layers. The transparent conductive layer 106 is provided as the light-emitting surface 108 of the semiconductor laminate 10. In practical applications, the light-emitting surface 8 of the semiconductor laminate may also be the top surface of the multilayer epitaxial layer. Also shown in FIG. 1, the filter layer 12 is formed on the semiconductor laminate 1 H 6 H980603 (6HUGA/200901TW) 201117430. The composition and structure of the optical layer 12 is U, and the blue light of the first layer 12 is The light of the band penetrates the filter layer 12. The photoreceptor of the blue light band emitted by the light-emitting layer (10) is as shown in the figure - the semiconductor laminate 1G and contains two (four) poles.
型的半if發光元件之封裝，一封裝基板(base)18係 先製備。該封裝基板18上提供兩個端子182。該半導 10係固定上該封裝基板18上。該兩電極19係以 (wu^bonding)的方式分別與該兩端子182做電連接。 如圖一所示，該透明封裴材料14係包覆該半導體疊層 10以及該就層12。該波長轉換材料10(例如，螢絲)係均 勻地分佈於該透明封裝材料14内。於圖一中，一螢光粉體 16被刻意誇大地描繪，以利說明光轉換的過程。該波長&換 材料16餘織光波段的光之—部分再行發射-黃光波段的 光。該藍光波段的光與該黃光波段的光進而混成白光。於一 具體實施例，上述黃光波段的光之波長範圍係介於 480〜700nm。 一特別地，該濾光層12之組成與結構係設計成讓射向該濾 光層12之黃光波段的光被該濾光層12反射。圖一所示案 例，該螢光粉體16為黃色螢光粉，能吸收藍光波段的^ BL，再行發射黃光波段的光yl。射向該濾光層12之黃光波 段巧光YL被該濾光層12反射。藉此，降低黃光波段的光被 該半導體疊層10吸收，進而提升該白光半導體發光元件i的 整體發光效率。 請再參閱圖一，該濾光層12並且形成在該半導體疊層 10之側表面上。藉此’該發光層1〇4發出的藍光波段的光之 取出率可以再增加，並且該波長轉換材料16所發出的黃光波 7 H980603(6HUGA/200901TW) 201117430 1〇吸收的量可以再降低，進而該白光 +導體發TbTG件1的整體發光效率可以再提升。 尤 圖-所示之白光半導體發光元件 明_料14内，而=覆= 長“材：=藍=^^上= 波段的光。也同樣地^再仃發射一頁先 射向_、、##厗二慮^光層12之組成與結構係設計成讓 射向〜慮7UI 12之該頁光波段的光被職光層12反射。 -覆二^麟本發明之白料導體發光元件1係以 ^ i曰iiifirbonding)方式讓該兩電極19與該兩端子 0兮其;bni ’提供該半導體叠層1〇之出光面108者 ίϊί。的底表面。該滤、光層12係形成於該基材⑽的 樣地’該波鶴撕料16係均料分佈於該透 塗佈在該觀層12上。圖二中元件符號 ，、圖+兀件付號相同者，即為先前已詳述的各個結構，盆 作用也相同，在此不多崎述。㈣調的是，該就層12 ^ 且形成在該半導體疊層10之側表面上， 導體發光元件1 纽率。 外⑩白光+ 圖二所示之白光半導體發光元件1的另一變異，該基材 可以被移除。因此，提供該半導體疊層1〇之出光面1〇8 者是多層磊晶層的底表面，並且該濾光層12係形成於該多声 蠢晶層的底表面上。 於一具體實施例中，該濾光層12即為分佈式布拉格反射 ，(:distributed Bmgg reflector, DBR)。也就是說，該遽光層 12A package of a type of semi-if light-emitting element, a package substrate 18 is prepared first. Two terminals 182 are provided on the package substrate 18. The semiconductor 10 is fixed to the package substrate 18. The two electrodes 19 are electrically connected to the two terminals 182 in a manner of (wu^bonding). As shown in FIG. 1, the transparent sealing material 14 covers the semiconductor laminate 10 and the layer 12. The wavelength converting material 10 (e.g., filament) is uniformly distributed within the transparent encapsulating material 14. In Fig. 1, a phosphor powder 16 is deliberately exaggerated to illustrate the process of light conversion. The wavelength & change material of the 16th ray light band - part of the re-emission - yellow light band of light. The light in the blue band and the light in the yellow band are further mixed into white light. In one embodiment, the wavelength of light in the yellow light band is between 480 and 700 nm. In particular, the composition and structure of the filter layer 12 are designed such that light directed into the yellow light band of the filter layer 12 is reflected by the filter layer 12. In the case shown in Fig. 1, the phosphor powder 16 is a yellow phosphor powder, which absorbs the BL of the blue light band and emits the light yl of the yellow light band. The yellow light beam YL directed to the filter layer 12 is reflected by the filter layer 12. Thereby, the light in the yellow light band is absorbed by the semiconductor laminate 10, thereby improving the overall luminous efficiency of the white light semiconductor light emitting element i. Referring again to Fig. 1, the filter layer 12 is formed on the side surface of the semiconductor laminate 10. Thereby, the light extraction rate of the blue light band emitted by the light-emitting layer 1〇4 can be further increased, and the amount of absorption of the yellow light wave 7 H980603 (6HUGA/200901TW) 201117430 1〇 emitted by the wavelength conversion material 16 can be further reduced. Further, the overall luminous efficiency of the white light + conductor TbTG device 1 can be further improved. The white light semiconductor light-emitting element shown in the figure is shown in the material 14, and the = cover = long "material: = blue = ^ ^ up = band light. Similarly, the second page is fired first _, ##厗二虑^ The composition and structure of the optical layer 12 are designed such that the light of the light band of the page of the 7UI 12 is reflected by the optical layer 12 of the page. - The two-material conductor light-emitting element of the invention 1 is to make the two electrodes 19 and the two terminals 0 in the manner of ^ i曰iiifirbonding); bni 'provides the bottom surface of the light-emitting surface 108 of the semiconductor laminate 1 . The filter and the optical layer 12 are formed. In the sample plot of the substrate (10), the spreader 16 is uniformly distributed on the layer 12. The component symbol in Figure 2, and the figure + the same number are the same. For each structure which has been described in detail, the potting effect is also the same, and it is not mentioned here. (4) The layer 12 ^ is formed and formed on the side surface of the semiconductor laminate 10, and the conductor light-emitting element 1 has a large ratio. 10 white light + another variation of the white light semiconductor light-emitting element 1 shown in Fig. 2, the substrate can be removed. Therefore, the light-emitting surface 1 of the semiconductor laminate 1 is provided. 8 is a bottom surface of the multi-layer epitaxial layer, and the filter layer 12 is formed on a bottom surface of the multi-sound layer. In a specific embodiment, the filter layer 12 is a distributed Bragg reflection. (:distributed Bmgg reflector, DBR). That is, the twilight layer 12
係由具有較咼折射率之一第一材料層以及具有較低折射率之 一第二材料層交互堆疊成一多層複合材料層。多層複合材料 層主要由(0.5H L 0.5ΗΓ組成，Η為1/4λ厚的第一材料層，L 8 H980603(6HUG A/200901T W) 201117430 為1/4人厚的第二材料層。該第一材料層可以由Ti02、Ti3〇5、 Υ2〇3、1¾¾、如〇5或Zr〇2所形成。該第二材料層可以由The multilayer material layer is alternately stacked by a first material layer having a higher refractive index and a second material layer having a lower refractive index. The multilayer composite layer is mainly composed of (0.5HL 0.5ΗΓ, Η is 1/4λ thick first material layer, L 8 H980603 (6HUG A/200901T W) 201117430 is 1/4 person thick second material layer. A material layer may be formed of Ti02, Ti3〇5, Υ2〇3, 13⁄43⁄4, such as 〇5 or Zr〇2. The second material layer may be composed of
Si02、MgF2、Na3AF6 或 Al2〇3 所形成。 一需強調的是，於實際應用上，該濾光層12即做為被覆在 該半導體疊層10上的鈍化層(passivation layer)，用以保謨兮· 半導體疊層10。 ' ^ 於一具體實施例中，多層複合材料層形式之濾光層12係 藉由一電子束蒸鍍製程所形成。為讓該濾光層12中每一層鍍 膜的^質更佳，上述電子束蒸鍍製程可以採用一離子辅助電 子束蒸錢製程(i〇n_assisted electron-beam evaporation process)。 在此需強調的是，根據本發明之濾光層12其各層鍍膜的 厚度除了需根據多層膜等效導納(effective admittance)的理論 外，還需考量據光層12所被覆之材料的折射率，更需考量到 鍍膜材料本身的折射率會隨著入射光的波長不同而改變。因 此在實務操作上，需先行藉由電腦模擬在特定半導體材料或 透明導電材料上形成不同層數、不同鍍膜材料之多層抗反射 結構層之整體光譜圖。 關於根據本發明之濾光層對入射光之反射率的電腦模 擬，請參閱圖三A、圖三B、圖三C、圖三D及圖三E。於 該模擬案例中，在ITO層上形成si〇2與Ti02交互堆疊成27 層之濾光層，濾光層的組成、各層材料的折射率以及各層的 膜厚請見圖三A。 、於該模擬案例中，先行模擬不同波長之入射光以〇。、1〇。 以及20二個不同入射角度從GaN層射向圖三a所示IT〇 f、濾光層以及環氧樹脂的反射率，其模擬結果如圖三Β所 示。從圖二Β的結果，清楚地顯示截止頻帶隨著入射角的增 H980603(6HUGA/200901TW) 9 201117430 加而向短波長區域移動’並且在入射角20。以下，濾光層對 455nm藍光的反射率可以降到1〇%以下。 "曰 圖二C為核擬由GaN基半導體發光元件所發出波長為 455mn藍光之入射光以〇。至90。的入射角度射向圖三A所^ 遽ιτο層、濾光層以及環氧樹脂的反射率，由Si〇2純化層取 代渡光層做相同之模擬的結果一併顯示於圖三C中。從圖二 C的結果，雖看出介入濾光層造成全反射的臨界角約為22。， 而介入Si〇2鈍化層造成全反射的臨界角約為27。。但人入 濾光層對於GaN基半導體發光元件發出藍光的整體^出仏並 純化層對於_基半導體發光元件發出藍 於該模擬案例中，接著模擬不同波長之入射 及4G°四個不同人㈣度從環氧樹脂射向 層以及GaN層的反射率，其模擬結 3入=的增加而向短波長區域移動，並且在人二 下，濾光層對570nm黃光的反射率可高達9〇%以上。 圖三E為模擬由螢光粉所發出波長為57〇nm J以^至90。的入射角度從環氧樹脂射向圖三、=光 層、ITO層以及GaN層的反射率，由所不慮先 做相同之模擬的結果—併顯示於圖三E ^從i取 果，清楚地顯示介人遽光層對57Qnm中圖二口: 98%:广介入叫純化層請-黃光二=:達 藉由以上較佳具體實施例之詳 述本發明之特徵與精神，而並非清楚描 施例來對本發明之範私以限制。相2 體實 涵盍各觀變及具娜的安排於本發明‘申 H980603(6HUGA/200901TW) 201117430 圍的範疇内。因此，本發明所申請之專利範圍的範疇應該根 據上述的說明作最寬廣的解釋，以致使其涵蓋所有可能的改 變以及具相等性的安排。Formed by Si02, MgF2, Na3AF6 or Al2〇3. It should be emphasized that, in practical applications, the filter layer 12 serves as a passivation layer overlying the semiconductor stack 10 for protecting the semiconductor stack 10. In a specific embodiment, the filter layer 12 in the form of a multilayer composite layer is formed by an electron beam evaporation process. In order to make the coating of each layer of the filter layer 12 better, the electron beam evaporation process may employ an ion-assisted electron-beam evaporation process. It should be emphasized here that the thickness of the coating layer of each layer of the filter layer 12 according to the present invention requires consideration of the refraction of the material covered by the photo layer 12 in addition to the theory of the effective admittance of the multilayer film. The rate, more importantly, depends on the refractive index of the coating material itself to vary with the wavelength of the incident light. Therefore, in practice, it is necessary to first simulate the overall spectrum of a multilayer anti-reflective structure layer of different layers and different coating materials on a specific semiconductor material or a transparent conductive material by computer simulation. For a computer simulation of the reflectance of the filter layer to incident light according to the present invention, please refer to Figure 3A, Figure 3B, Figure 3C, Figure 3D and Figure 3E. In the simulation case, a filter layer of si〇2 and TiO2 was formed by stacking 27 layers on the ITO layer. The composition of the filter layer, the refractive index of each layer material, and the film thickness of each layer are shown in Fig. 3A. In the simulation case, the incident light of different wavelengths is simulated first. 1〇. And 20 different incident angles from the GaN layer to the reflectivity of the IT〇 f, filter layer and epoxy resin shown in Figure 3a, the simulation results are shown in Figure 3. From the results of Fig. 2, it is clearly shown that the cutoff band is shifted toward the short wavelength region by the increase of the incident angle H980603 (6HUGA/200901TW) 9 201117430 and is at the incident angle 20. Hereinafter, the reflectance of the filter layer to 455 nm blue light can be reduced to less than 1%. "曰 Figure 2C shows the incident light emitted by the GaN-based semiconductor light-emitting device with a wavelength of 455 nm. To 90. The incident angle is incident on the reflectance of the layer 、ιτο layer, the filter layer and the epoxy resin in Fig. 3A, and the result of the same simulation by the Si〇2 purification layer is shown in Fig. 3C. From the results of Figure 2C, it is seen that the critical angle of total reflection caused by the intervening filter layer is about 22. The critical angle of total reflection caused by the intervening Si〇2 passivation layer is about 27. . However, the human-input filter layer emits blue light for the GaN-based semiconductor light-emitting device and the purification layer emits blue for the _-based semiconductor light-emitting device in the simulation case, and then simulates the incidence of different wavelengths and 4G° four different people (four degrees). The reflectivity from the epoxy light-emitting layer and the GaN layer shifts to the short-wavelength region by simulating the increase of the junction 3, and under the human, the reflectivity of the filter layer to the 570 nm yellow light can be as high as 9〇%. the above. Figure 3E shows that the wavelength emitted by the phosphor is 57 〇 nm J to ～90. The angle of incidence from the epoxy to the reflectivity of Figure 3, = light layer, ITO layer and GaN layer, the result of the same simulation is not considered first - and is shown in Figure 3 E ^ from i, clearly Displaying the interfering layer to the 57Qnm middle view: 98%: the wide intervening is called the purification layer. - Huang Guang 2 =: By the above detailed description of the preferred embodiment, the features and spirit of the present invention are not clearly described. The examples are intended to limit the scope of the invention. Phase 2 The actual 盍 盍 及 及 具 具 具 具 具 具 具 具 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 980 Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the light of the above description, so that it covers all possible modifications and equivalent arrangements.
11 H980603(6HUGA/200901TW) 201117430 【圖式簡單說明】 圖一係繪示根據本發明之一較佳具體實施例之白光半導 體發光元件之戴面視圖。 圖二係一截面視圖以示意地繪示根據本發明之白光半導 體發光元件係以一覆晶接合方式進行封裝。 圖三A為根據本發明之濾光層之模擬案例其濾光層的組 成、各層材料的折射率以及各層的膜厚。 圖三B為模擬不同波長之入射光以〇〇、ι〇〇以及2〇0三個 不同入射角度從GaN層射向圖三A所示ITO層、濾光層以 及環氧樹脂的反射率。 圖三C為模擬由GaN基半導體發光元件所發出波長為 455nm藍光之入射光以〇°至90°的入射角度射向圖三A所示 滤ITO層、遽光層以及環氧樹脂的反射率。 圖三D為模擬不同波長之入射光以〇〇、1〇〇、20〇、30°、 以及40°四個不同入射角度從環氧樹脂射向圖三a所示濾光 層、ITO層以及GaN層的反射率。 圖三E為模擬由螢光粉所發出波長為570nm黃光之入射 光以0°至90°的入射角度從環氧樹脂射向圖三a所示濾光 層、ITO層以及GaN層的反射率。 【主要元件符號說明】 1 :白光半導體發光元件 1〇 :半導體疊層 102 :基材 104 :發光層 12 H980603(6HUGA/20〇9〇 1T W) 201117430 106 :透明導電層 12 :濾光層 16 :波長轉換材料 182 :端子 BL :藍光 108 :出光面 14 :透明封裝材料 18 :封裝基板 19 :電極 YL :黃光11 H980603 (6HUGA/200901TW) 201117430 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a white light semiconductor light-emitting element according to a preferred embodiment of the present invention. Figure 2 is a cross-sectional view schematically showing the white light semiconductor light-emitting element according to the present invention packaged in a flip chip bonding manner. Fig. 3A is a view showing the composition of the filter layer, the refractive index of each layer material, and the film thickness of each layer in the simulation case of the filter layer according to the present invention. Fig. 3B is a graph showing the reflectance of the ITO layer, the filter layer and the epoxy resin shown in Fig. 3A from the GaN layer at different incident angles of 入射, ι〇〇 and 2〇0 for the incident light of different wavelengths. Figure 3C is a graph showing the reflectance of the ITO layer, the phosphor layer, and the epoxy resin shown in Fig. 3A at an incident angle of 〇° to 90° incident light emitted by a GaN-based semiconductor light-emitting element at a wavelength of 455 nm. . Figure 3D is a simulation of different wavelengths of incident light from 环氧树脂, 1〇〇, 20〇, 30°, and 40° from four different incident angles from the epoxy to the filter layer, ITO layer shown in Figure 3a, and The reflectivity of the GaN layer. Fig. 3E is a graph showing the reflectance of the incident light from the 570 nm yellow light emitted by the phosphor to the filter layer, the ITO layer and the GaN layer shown in Fig. 3a at an incident angle of 0° to 90°. [Description of main component symbols] 1 : White semiconductor light-emitting device 1 : Semiconductor laminate 102 : Substrate 104 : Light-emitting layer 12 H980603 (6HUGA/20〇9〇1T W) 201117430 106: Transparent conductive layer 12: Filter layer 16 : wavelength conversion material 182 : terminal BL : blue light 108 : light-emitting surface 14 : transparent packaging material 18 : package substrate 19 : electrode YL : yellow light
13 H980603(6HUGA/200901TW)13 H980603(6HUGA/200901TW)