201117437 六、發明說明： 【發明所屬之技術領域】 本發明是有關於—種發光二極體封裝方法，且特別是 有關於-種可大量生產的發光二極體封裝方法。 【先前技術】 發光二極體具有體積小、壽命長、耗電量低、反應速 ，快、耐震性特佳等優點。目前發光二極體應用在各種電 器、通訊產品等領域十分廣泛，更有取代傳統光源的趨勢。 因此必須開發^更有效率的製程，才能達到製造、 低成本以提高獲利的目的。201117437 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode packaging method, and more particularly to a light-emitting diode packaging method which can be mass-produced. [Prior Art] The light-emitting diode has the advantages of small volume, long life, low power consumption, fast response, fast, and excellent shock resistance. At present, LED applications are widely used in various fields of electrical equipment and communication products, and there is a tendency to replace traditional light sources. Therefore, it is necessary to develop a more efficient process in order to achieve manufacturing and low cost to increase profitability.
然而，受限於打線機的數量以 使得發光二極體的生產效率仍 以及封裝成品組裝的複雜 仿受到限制。 【發明内容】 因此本發明之-態樣是在提供— 法’用以大量快速生產發光二_。種發光二極體封裝方 教封裝方法，包括提 本發明實施方式之發光二極體晶 201117437 供一第一膠膜’將複數個晶粒置於第一膠膜上，並自第一 膠膜取下部份晶粒’以陣列方式排列於一載台上，形成一 晶粒陣列’其中晶粒陣列中的每一晶粒具有複數個電極。 以整批方式自載台上移動此晶粒陣列至一基材上，基材上 具有複數個銲墊分別對應晶粒陣列中每一晶粒之電極，使 各銲墊與各晶粒之電極分別接合在一起。 根據上述可知，本發明實施方式之發光二極體晶粒封 裝方法係於晶粒分類後，直接將篩選出之晶粒排列成陣 列’使整批晶粒可同時固著於基材上’完成基材與晶片之 電性連接。 .因此，本發明實施例之發光二極體封裝方法可大幅縮 短發光二極體元件組裝及封裝時間，適用於大量生產。 【實施方式】 依照本發明實施方式的一種發光二極體封裝方法，晶 圓經切割（Die Saw)後會同時形成晶粒及不良晶粒，每一晶 粒之上表面可具有複數個電極。利用頂針由膠膜上依序取 下部份晶粒，取下的晶粒以陣列方式排列於一載台上。將 排列於载台上的晶粒整批貼附於另一膠膜上，移動膠膜將 BB粒整批由载台上移開，再利用覆晶方式固著於一基材上。 請參照第ΙΑ - 1B圖，其繪示依照本發明一實施例的 一種發光二極體晶粒之封裝方法示意圖。參照第ia圖， 附著於第-膠膜22G上之晶圓經切割後同時形成複數個良 好或是不良的晶粒230。各晶粒230具有發光元件本體232 以及電極234，電極係形成於發光元件本體232上。以固 201117437However, the number of wire machines is limited so that the production efficiency of the light-emitting diodes and the complexity of assembly of the packaged products are limited. SUMMARY OF THE INVENTION Therefore, the present invention is in the form of a method for rapidly producing a plurality of light-emitting diodes. Light-emitting diode package teaching method, including the light-emitting diode crystal 201117437 of the embodiment of the invention for a first film to put a plurality of crystal grains on the first film, and from the first film The removed portions of the dies are arranged in an array on a stage to form an array of dies. Each of the dies in the array of dies has a plurality of electrodes. Moving the die array onto a substrate in a batch manner from the stage, the substrate has a plurality of pads corresponding to the electrodes of each of the die arrays, so that the pads and the electrodes of the respective die Join together separately. According to the above, the LED package method according to the embodiment of the present invention is used to directly align the selected crystal grains into an array after the grain classification, so that the entire batch of crystal grains can be simultaneously fixed on the substrate. The substrate is electrically connected to the wafer. Therefore, the LED package method of the embodiment of the present invention can greatly shorten the assembly and packaging time of the LED components, and is suitable for mass production. [Embodiment] According to an LED package method according to an embodiment of the present invention, after the wafer is cut (Die Saw), crystal grains and defective crystal grains are simultaneously formed, and the surface of each of the crystal grains may have a plurality of electrodes. A part of the crystal grains are sequentially removed from the film by the thimble, and the removed crystal grains are arranged in an array on a stage. The crystal grains arranged on the stage are attached to the other film in batches, and the BB film is removed from the stage by moving the film, and then fixed on a substrate by flip chip bonding. Please refer to FIG. 1B for a schematic diagram of a method for packaging a light-emitting diode die according to an embodiment of the invention. Referring to the ia diagram, the wafer attached to the first film 22G is cut to form a plurality of good or bad crystal grains 230. Each of the crystal grains 230 has a light-emitting element body 232 and an electrode 234 formed on the light-emitting element body 232. To solid 201117437
一面向下，再以頂針250 粒230向下推# 一膠膜220固緊擴張，使相鄰晶粒230間 間隔。依照本實施方式之一實施例，固定 掉落在下方的栽台260上。 -我置210，使晶粒230具有電極234之 I針250將經過晶粒檢測後良好的部份晶 使被選取的晶粒230脫離第一膠臈22〇， 其中^裝置21〇可連接一第一移動裝置（圖未 不）’做2D平面移動以使頂針25〇略過不良的晶粒。隨著 # 250依序推落部份筛選出的晶粒230的同時，载台26〇 也利用另一第二移動裝置（圖未繪示），於設定好的陣Q列排 列路徑上做2D平面移動，即朝與固定裝置移動路徑相 之方向移動，以承接由#膜22〇上落下的部份晶粒⑽， 並讓筛選出的晶粒230依序排列在載台26〇上的預定位置 上。此時，排列於載台26〇上的晶粒23〇具有電極…之 其中’ _出的晶粒23〇於载台編上的排列方式可 籲例如方形矩P車排列方式。依照本發明之實施例，陣列排列 方式係依照與載台26〇上的晶粒23()相對應之_基材上預 設之銲墊的位置及數量來決定之。 再參照第1B圖’提供固定於另一固定裝置212上的膠 膜222 ’用以貼附載自26〇 ±以陣列方式排列的此部份筛 選出的晶粒230。移動膠膜222以將此部份筛選出的晶粒 230由載口 260上整批移開，使以陣列方式排列的晶粒 可整批同時放置於-基材27〇上，且每一晶粒23〇之電極 234分別以覆晶方式與基材27〇上相對應的銲墊272接觸。 201117437 依照本發明之一實施例，可將整批晶粒230的電極234 沾附一助銲劑’以迴銲方式將電極234與銲墊272接合， 形成發光二極體之電源接點。 請參照第1C圖，其繪示依照本發明一實施例的一種封 裝單元剖面結構示意圖。將第1B圖所完成之覆晶結構上形 成一保護層280 ’以保護覆晶之元件，再切割成複數個封 裝單元。其中’每一封裝單元包含基材270、位於基材270 上之銲墊272、晶粒230與銲墊272結合形成一覆晶結構， 一保護層280包覆於覆晶結構外。 .依照本發明之一實施例，保護層28〇之材質包含透明 樹脂，例如可為環氧樹脂；保護層28〇更包含一底膠，填 充於晶粒232與基材270之間的縫隙。 依照本發明另一實施例，晶粒232可固定於其他基材 上。請參照第2A〜2B圖，第2A圖係繪示依照本發明另一 實施例的一種覆晶立體結構示意圖，第2B圖為第2A圖所 示之覆晶結構的剖面示意圖。 晶粒332包含發光元件本體334及二電極336，係利 •用與第1A〜1C圖所示之類似方法，將整批筛選出的晶粒 332以迴銲方式分別同時與複數導電支架接合，之後 將各導電支架35〇分離，形成單獨的封裝單元。 雖然本發明已以二實施例揭露如上並非用以限 定本發明，任何熟習此技藝者，在不脫離本發明之精神和 範圍内，當可作各種之更動與潤飾，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 201117437 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第ΙΑ - 1B圖係繪示依照本發明一實施例的一種發光 二極體之封裝方法示意圖。 第1C圖，其繪示依照本發明一實施例的一種封裝單元 之剖面示意圖。 第2A圖係繪示依照本發明另一實施例的一種覆晶結 構立體示意圖。 • 第2B圖為第2A圖所示之覆晶結構的剖面示意圖。 【主要元件符號說明】 210 :固定裝置 220 :膠膜 230 .晶粒 234 :電極 260 :載台 272 :銲墊 332 :晶粒 336 :電極 212 :固定裝置 222 :膠膜 232 :發光元件本體 250 :頂針 270 :基材 280 :保護層 334 :發光元件本體 350 :導電支架One side down, and then the thimble 250 particles 230 push down # a film 220 to be tightly expanded, so that the adjacent crystal grains 230 are spaced apart. According to an embodiment of the present embodiment, it is fixedly dropped on the lower stage 260. - I set 210 so that the I-roller 250 of the die 230 having the electrode 234 will pass through the die to detect a good partial crystal, so that the selected die 230 is separated from the first die 22, wherein the device 21 can be connected to a The first mobile device (not shown) performs a 2D plane movement to cause the thimble 25 to slant through the bad dies. As the #250 sequentially pushes down the partially selected crystal grains 230, the stage 26〇 also uses another second moving device (not shown) to perform 2D on the arranged array of Q arrays. The plane moves, that is, moves toward the moving path of the fixing device to receive a part of the crystal grains (10) dropped by the #膜22, and the selected crystal grains 230 are sequentially arranged on the stage 26〇. Location. At this time, the crystal grains 23 排列 arranged on the stage 26 are provided with electrodes, and the arrangement of the crystal grains 23 on the stage is called, for example, a square moment P arrangement. In accordance with an embodiment of the present invention, the array arrangement is determined by the position and number of pads pre-set on the substrate corresponding to the die 23() on the stage 26''. Referring again to Figure 1B, a film 222' is provided that is attached to the other fixture 212 for attaching the selected portions of the die 230 that are arrayed from the array. The moving film 222 removes the crystal grains 230 selected from the portion from the carrier 260 in a batch, so that the array-arranged crystal grains can be placed on the substrate 27 at the same time, and each crystal is placed. The electrode 23 of the particle 23 is in contact with the pad 272 corresponding to the substrate 27 on the flip chip. In accordance with an embodiment of the present invention, the electrode 234 of the entire batch of die 230 may be adhered with a flux ′ to bond the electrode 234 and the pad 272 in a reflow manner to form a power contact of the light emitting diode. Referring to FIG. 1C, a cross-sectional structural view of a package unit according to an embodiment of the invention is shown. A protective layer 280' is formed on the flip-chip structure completed in Fig. 1B to protect the flip chip and then cut into a plurality of package units. Wherein each package unit comprises a substrate 270, a pad 272 on the substrate 270, the die 230 and the pad 272 are combined to form a flip chip structure, and a protective layer 280 is coated on the outside of the flip chip structure. According to an embodiment of the invention, the material of the protective layer 28 includes a transparent resin, such as an epoxy resin, and the protective layer 28 further includes a primer to fill the gap between the die 232 and the substrate 270. In accordance with another embodiment of the present invention, die 232 can be attached to other substrates. 2A to 2B, FIG. 2A is a schematic view showing a three-dimensional structure of a flip chip according to another embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view showing a flip chip structure shown in FIG. 2A. The die 332 includes a light-emitting element body 334 and a two-electrode 336. The dies 332 are sequentially bonded to the plurality of conductive supports in a reflow manner by a method similar to that shown in FIGS. 1A to 1C. The conductive holders 35 are then separated to form a separate package unit. The present invention has been disclosed in the above embodiments, and is not intended to limit the present invention. It is to be understood that those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. This is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; A schematic diagram of a method of packaging a light-emitting diode of an embodiment. 1C is a cross-sectional view showing a package unit in accordance with an embodiment of the invention. Fig. 2A is a perspective view showing a flip chip structure according to another embodiment of the present invention. • Fig. 2B is a schematic cross-sectional view showing the flip chip structure shown in Fig. 2A. [Main component symbol description] 210: Fixing device 220: film 230. Die 234: Electrode 260: Stage 272: Pad 332: Die 336: Electrode 212: Fixing device 222: Film 232: Light-emitting element body 250 : thimble 270: substrate 280: protective layer 334: light-emitting element body 350: conductive support