201116812 六、發明說明： 【發明所屬之技術領域】 本發明係關於點測裝置’尤指一種在該點測裝置上增設有 應變規的點測裝置，以能藉由該應變規因變形時，會改變自身 電阻量的特性，精準地記算出該點測裝置對晶圓所產生的壓 力。 【先前技術】 近年來’隨著南科技產業的蓬勃發展’積體電路 (integratedcircuit)的應用產品已逐漸普及，由於其主要 設計於半導體晶圓之表面上，故亦促使晶圓製程 (Wafer Process)的技術不斷精進，根據研究機構iSuppli 的研究指出，在全球資訊、通訊與消費性電子產品的需求大幅 拉升之下，造成晶圓廠的產能利用率亦不斷爬升，導致半導體 產業之石夕晶圓的需求開始增加，igUppli預估，半導體產業的 矽晶圓總出貨面積將從2009年的70億平方英呎增加至 2010年的82億平方英呎，年成長率達17.4%，因此，為能 有效提升晶圓產品的出廠良率，以避免後續相關電子產品的品 質不佳，業者在製造出晶圓後，通常會透過一點測裝置將電流 準確地傳送至晶圓上的LED晶粒，並藉由量測該晶圓上的led 晶粒所發出的光線特性（如：波長、發光強度、顏色等），判 斷出晶圓的製造品質，以能控管晶圓的出廠良率。 兹僅就傳統之點測裝置的硬體結構為例，進行說明，請參 閱第1圖所示，該點測裝置丨主要包括一底座n、一擺臂12 201116812 及-探針13，其中該底座n係略呈c形，且能接收一外部電 流，其底部鄰近-端的上緣設有—第—導電接點⑴，其頂部 鄰近一端的下緣則固設有一彈性元件113 (如··彈簧），另， 該擺臂12之-端設有-探針夾持部14，其另一端則朝該底座 11之另-端的方向延伸，域接在該底座u的另—端上，以 形成-電氣連接，又，該擺臂12鄰近另―端的下緣尚設有_ 第二導電接點122，其能藉由樞接㈣—端作為讀點，進行 上下擺動，使得該第二導電接點122與該第—導電接點⑴相 互分離或相互抵接’以在該第二導電接點122與該第一導電接 點111間形成斷路狀態或短路狀態，又，該擺臂12的頂面尚 被該彈性元件113之-端所缝，令該第二導電無122常態 地抵接至該第-導電接點111，而形成—電氣迴路，再者，該 探針13係被夾持在該探針夾持部14上，且與該底座u相電 氣連接，如此，當該點測装置丨接近一晶圓15，並以該探針 13朝向該晶圓15之頂面抵壓時，該探針13將受到該晶圓15 傳來的反作用力影響，而對該探針夾持部14與該擺臂12產生 一向上的推力，嗣，當該探針13所受到之反作用力克服該彈 性元件113施予該擺臂12的向下壓力時，該擺臂12之一端即 會朝向遠離該晶圓15的方向位移，進而使該第二導電接點122 與該第一導電接點ill間分離，此時，該底座11所接收之外 部電流’即會依序通過該擺臂12、該探針夾持部丨4及該探針 13，傳送至該晶圓15上的LE：D晶粒，使得該UED晶粒因接收 到電流而發光，且發出的光源會被一積分球（integrating sphere) 17所接收，以供業者能藉由量測該⑽晶粒所發出 201116812 之光線特性，判斷出該晶圓15的品質良筹。 惟，復請參閱第1圖所示，前述之傳統的點測裝置！，在 使用:仍具有諸多缺失，首先’為了穩固該探針二^201116812 VI. Description of the Invention: [Technical Field] The present invention relates to a spot measuring device, and more particularly to a spot measuring device in which a strain gauge is added to the spot measuring device, so that the strain gauge can be deformed by the strain gauge. It will change the characteristics of its own resistance and accurately calculate the pressure generated by the measuring device on the wafer. [Prior Art] In recent years, with the development of the South technology industry, the application of integrated circuits has gradually become popular. Because it is mainly designed on the surface of semiconductor wafers, it also promotes the wafer process (Wafer Process). The technology is constantly improving. According to research by research institute iSuppli, the demand for global information, communication and consumer electronics products has been greatly increased, resulting in a rapid increase in the capacity utilization rate of the fab, leading to the semiconductor industry. Demand for wafers has begun to increase, and igUppli estimates that the total wafer floor area of the semiconductor industry will increase from 7 billion square feet in 2009 to 8.2 billion square feet in 2010, with an annual growth rate of 17.4%. In order to effectively improve the factory yield of wafer products, in order to avoid the poor quality of subsequent related electronic products, after manufacturing the wafer, the industry usually transmits the current accurately to the LED crystal on the wafer through a point measuring device. Grain, and by measuring the light characteristics (such as wavelength, luminous intensity, color, etc.) emitted by the led die on the wafer, determine the wafer system Manufacture quality to control the factory yield of wafers. For example, the hardware structure of the conventional spot measuring device is taken as an example. Referring to FIG. 1 , the measuring device 丨 mainly includes a base n , a swing arm 12 201116812 and a probe 13 . The base n is slightly c-shaped and can receive an external current, and the upper edge of the bottom adjacent to the end is provided with a first conductive contact (1), and a top edge of the top end is fixed with a resilient element 113 (eg··· a spring), further, the end of the swing arm 12 is provided with a probe clamping portion 14, and the other end thereof extends toward the other end of the base 11, and the field is connected to the other end of the base u to Forming-electrical connection, further, the swing arm 12 is further provided with a second conductive contact 122 adjacent to the lower end of the other end, which can be pivoted up and down by the pivotal (four)-end as a read point, so that the second conductive The contact 122 and the first conductive contact (1) are separated from each other or abut each other to form an open state or a short circuit between the second conductive contact 122 and the first conductive contact 111, and further, the swing arm 12 The top surface is still sewn by the end of the elastic member 113, so that the second conductive layer 122 is normally abutted to the first guide The contact 111 forms an electrical circuit. Further, the probe 13 is clamped on the probe clamping portion 14 and electrically connected to the base u. Thus, when the measuring device is close to one When the wafer 15 is pressed against the top surface of the wafer 15 , the probe 13 is affected by the reaction force transmitted from the wafer 15 , and the probe clamping portion 14 is The swing arm 12 generates an upward thrust. When the reaction force received by the probe 13 overcomes the downward pressure applied by the elastic member 113 to the swing arm 12, one end of the swing arm 12 faces away from the crystal. The direction of the circle 15 is displaced, and the second conductive contact 122 is separated from the first conductive contact ill. At this time, the external current received by the base 11 passes through the swing arm 12 in sequence. The needle clamping portion 及4 and the probe 13 are transferred to the LE:D die on the wafer 15, so that the UED die emits light by receiving a current, and the emitted light source is subjected to an integrating sphere. 17 is received, so that the supplier can judge the wafer by measuring the light characteristic of 201116812 issued by the (10) die. 15 quality good. However, please refer to the traditional point measuring device mentioned above in Figure 1. , in use: still has many missing, first ‘in order to stabilize the probe
晶㈣的過程上，因自行受力旋轉，而未制 貫地帶動該_2，故，業者通常會賴探針雜㈣設外 的較為厚重’以加大該探針夾持部u的夾持面積，同時，亦 會增長該探針13的長度，使得聰針錄部14 _固地夹持 住該探針13，如此—來，將造成該點職置1的整體體積龐 大’除了無歧點測裝置1 __化外，更會使該積分球 17與該晶圓15間的距離較遠，造成該積分球17的量測誤差 健大，影響了晶圓15的出廠良率。此外，傳統的點測裝置 1係必須精準地控繼探針13的下壓力量，因為，若下壓力 量過大’則晶圓15便不容易推動該探針13上移，將造成該晶 圓15之LED晶粒的表面損壞，且探針13亦容易發生磨損，反 之’右下壓力量過小，則該探針13與該晶圓15之LED晶粒的 表面會接_佳，鱗制的树度，目前來說，業者通常透 過調整該彈性元件113的壓迫力，達到控制該探針13的下壓 力量’但由於前述調整作業，均由人工完成，故常會發生調整 上的誤差，致使該探針13的下壓力量不如業者預期，嚴重影 響到業者的生絲序’且大幅降低了該關裝置丨的偵測靈敏 度0 綜上所述可知’由於傳統之點測裝置，因採用機械開關的 方式，而必須以人力調整彈性元件，以控制該探針的下壓力 量，使得其設計並不符合業者之當前需求趨勢 ’因此，如何針 201116812 要課題。 對傳統之助m置所具㈣敝，進行改善，以有效提升點測 裝置的伽靈敏度及精準度’即成為相關業者所欲探討之一重 【發明内容】 /有鑑於傳統的點測裝置因機械開關的作動設計方式，而必 須採用人工彈性元件的壓迫力，導致料發生誤差的問 題’因此，發明人經過長久努力研究與實驗，終於開發設計出 本發明之-種具應變規之關裝置，以轉由本發明之問世， 而能提供—鋪新結構的點測裝置，並有效解決原有之問題。 本發明之-目的，係提供-種具應變規之闕裝置，包括 一擺臂、-應魏、—探針緒部、—控制單元（如： ί接t 擺臂的一端係固定至一裝置的固定端上，且 此 夕部電源，其另一端則連接至該探針夾持部之一端 二該應變規，在該擺臂產生變形量時，係會使 :::，發生變化’另’該控制單元係電氣連接至 二應舰’ Κ貞測該應變規的電阻值變化量 先實峨得之—對照表’轉換為—重量單位(如 、予以顯不，或據以進行分析判斷，再 =::r夾持_-端β此，二= 〜B曰圓的頂面抵麼，以對該晶圓產 探物舰★咖力，= 朝向遠離該晶圓的方向變形，進而使得該擺臂 f _形，令·鮮元能根懸_之該應變規 201116812 之電阻值變化量，得知並控制該探針對該晶圓的下壓力量，以 能大幅提升該點測裝置的偵測靈敏度及精準度。 本發明之另—目的，係該探針包括部及—水平部， 且該青折部雜該水平娜成-小於145度且大於⑽度的失 角，該水平部之-端會被姚固定於該探針麟部的另一端 中’且該彎折部會暴露在該探針夾持部外，如此，即可大幅縮 賴關裝置的紐體積，並使_積分球缺接鱗檢測=晶 圓，以提高檢測的準確性。 鲁 為便貴審查委員能對本發明目的、技術特徵及其功效， 做更進一步之認識與瞭解，茲舉實施例配合圖式，詳細說明如 下： 【實施方式】 由於傳統之點測裝置係採用機械開關的設計方式，因而衍 生了諸多問題，故’發明人乃重新設計了 一個無機械開關的硬 體架體’以能解決業者所面臨的傳統問題，且尚能達到薄型化 的外觀。為此，發明人特別使用了「應變規」此一元件，查， 應變規（Strain Gage)又稱為應變計，其原理乃利用其内之 金屬導線的電阻值之變化，來量測其應變量，主要因電阻值會 隨著長度的改變’而成正比的變化，因此’當應變規貼附至測 試體上時’可將該應變規與該測試體視為一體，而隨著該測試 體被彎折變形時’其長度亦會隨之改變’致使該應變規的電阻 值發生變化’故，發明人乃將前述的應變規結合至點測裝置 上，以形成一嶄新的點測裝置。 201116812 在本=係：Γ:之點測裝置，請參閲第2圖所示， 务月之-難貫關巾，職置 一探針失持部22、一祕㈧浴一知…括擺# 其中μ —控卿元24 〇 ··電腦）， 接收= 固定至，的固定端31上，且能夠 接收外。卩電源，以能在測試一晶 又：擺臂21的另一端則連接至該探針失持部 底面上’分別貼附設有—應變規211，在該擺臂21 : 生變形4時，係會使魏211的餘值發生變 卿=實施例中，乃以該擺臂21的頂面與底 有一 ^規211為例，惟，在本發明之其它實施财，亦可僅在擺 #的其中一面上，設有一應變規211，合先陳明。 、另，復請參閱第2圖所示，該探針23係為導電材質所製 成’且包括-蠻折部231及一水平部232，其中該水平部挪 4被夾持gj疋於該探針夾持部22的另—端中，該響折部 231則會暴露在該探針夹持部22外，且該f 平部微間會形成-小於145度且大於9〇度的夹角Θ與又， 該探針23尚與該擺臂21形成電氣連接，以能接收該擺臂21 所傳來的電源，如此，當該晶圓3G朝該探針23的方向接近， ^其頂面受到該探針23之f折部231的抵紐，即能接收該 ^針23傳來的電源’且形成一迴路，促使該晶圓3〇上的· 晶粒散發出光線，以供判斷該晶圓3()的製造品質。 承上，在本㈣之其它實施财，娜做持部22能與 該擺臂21 -體成形，而非僅限定為分開設置。再者，復請參 閱第2圖所示’該控制單元24係電氣連接至該應變規川， 201116812In the process of crystal (4), due to self-rotation, the _2 is not continually driven. Therefore, the manufacturer usually relies on the thicker part of the probe (4) to increase the clamp of the probe clamping portion u. Holding the area, at the same time, the length of the probe 13 is also increased, so that the Cong pin recording unit 14 _ firmly clamps the probe 13, so that the overall volume of the position 1 will be large. In addition, the distance measuring device 1 is further away from the wafer 15 and the measurement error of the integrating sphere 17 is large, which affects the factory yield of the wafer 15. In addition, the conventional spot measuring device 1 must accurately control the amount of downward pressure of the probe 13, because if the amount of downward pressure is too large, the wafer 15 will not easily push the probe 13 up, which will cause the wafer 15 to be lifted. The surface of the LED die is damaged, and the probe 13 is also prone to wear. Otherwise, if the amount of the right lower pressure is too small, the probe 13 and the surface of the LED die of the wafer 15 are connected. At present, the operator usually adjusts the pressing force of the elastic member 113 to control the amount of downward pressure of the probe 13. However, since the adjustment operation is manually performed, an adjustment error often occurs. The amount of downward pressure of the probe 13 is not as expected by the operator, which seriously affects the raw silk sequence of the manufacturer's and greatly reduces the detection sensitivity of the device 0. In summary, it can be seen that due to the conventional spot measuring device, due to the use of mechanical switches In this way, the elastic element must be adjusted manually to control the amount of downward pressure of the probe, so that its design does not meet the current trend of the industry's demand. Therefore, how to solve the problem is 201116812. For the traditional help, the (four) 敝, to improve, in order to effectively improve the gamma sensitivity and accuracy of the point measurement device, has become one of the relevant industry's desire to discuss [invention] / in view of the traditional point measurement device due to machinery The design of the switch is designed, and the pressing force of the artificial elastic element must be used, which causes the error of the material. Therefore, after long-term research and experiment, the inventor finally developed and designed the device with the strain gauge of the present invention. By the advent of the present invention, it is possible to provide a new structure of the spot measuring device and effectively solve the original problem. The object of the present invention is to provide a device with a strain gauge, comprising a swing arm, a - Wei, a probe, and a control unit (eg, one end of the swing arm is fixed to a device) On the fixed end, and the other end of the power supply, the other end is connected to one end of the probe clamping portion, the strain gauge, when the swing arm generates a deformation amount, the system will cause :::, change "other" The control unit is electrically connected to the second ship's 'measured the amount of change in the resistance value of the strain gauge first--the comparison table' is converted into a weight unit (if, is not displayed, or based on analysis and judgment, Then =::r holds the _-end β, and the top surface of the second=~B circle is offset, so that the wafer is produced in the direction of the wafer, and the direction is away from the wafer, thereby making The swing arm f _ shape, the fresh element can hang the amount of resistance change of the strain gauge 201116812, and know and control the amount of downward pressure of the probe on the wafer, so as to greatly improve the measuring device Sensing sensitivity and accuracy. Another object of the present invention is that the probe includes a portion and a horizontal portion, and the blue fold If the level is Nacheng-less than 145 degrees and greater than (10) degrees, the end of the horizontal portion will be fixed in the other end of the probe's collar and the bend will be exposed to the probe clip. Outside the department, in this way, the size of the device can be greatly reduced, and the _ integrating sphere is missing the scale detection = wafer to improve the accuracy of the detection. Lu Wei will examine the purpose and technical features of the invention. And its efficacy, to further understand and understand, the embodiment with the diagram, the detailed description is as follows: [Embodiment] Because the traditional point measurement device uses the mechanical switch design method, it has caused many problems, so ' The inventor has redesigned a hardware frame without a mechanical switch to solve the traditional problems faced by the industry, and can still achieve a thinned appearance. For this reason, the inventor particularly used the "strain gauge". Strain Gage, also known as strain gage, is based on the change of the resistance value of the metal wire inside it to measure its strain, mainly because the resistance value will change with the length. A proportional change, so 'when the strain gauge is attached to the test body', the strain gauge can be considered as one body, and the length of the test body will change as the test body is bent and deformed. The resistance value of the strain gauge is changed. Therefore, the inventors have combined the aforementioned strain gauge to the spot measuring device to form a new spot measuring device. 201116812 In this system: Γ: the measuring device, please Referring to Figure 2, the month of the month - difficult to close the towel, the position of a probe missing part 22, a secret (eight) bath a know ... 摆 pendulum # where μ - control Qing Yuan 24 〇 · · computer), Receiving = fixed to the fixed end 31, and capable of receiving the external power supply, so as to be able to test the crystal and the other end of the swing arm 21 is connected to the bottom surface of the probe missing portion respectively. The strain gauge 211, when the swing arm 21 is deformed by 4, causes the residual value of Wei 211 to change. In the embodiment, the top surface and the bottom of the swing arm 21 have a rule 211 as an example. In other implementations of the present invention, it is also possible to provide a strain gauge 211 on only one side of the pendulum #. In addition, as shown in FIG. 2, the probe 23 is made of a conductive material and includes a bar-shaped portion 231 and a horizontal portion 232, wherein the horizontal portion 4 is clamped to the gj In the other end of the probe holding portion 22, the bellows portion 231 is exposed outside the probe holding portion 22, and the flat portion of the f flat portion forms a clip of less than 145 degrees and greater than 9 turns. The probe 23 is further electrically connected to the swing arm 21 to receive the power transmitted from the swing arm 21, so that when the wafer 3G approaches the probe 23, The top surface is received by the f-fold portion 231 of the probe 23, that is, the power source from the pin 23 can be received and a circuit is formed to cause the die on the wafer 3 to emit light for The manufacturing quality of the wafer 3 () is judged. In addition, in the other implementation of this (4), the Na holding unit 22 can be formed with the swing arm 21 body, and is not limited to being separately provided. Furthermore, please refer to FIG. 2 for details. The control unit 24 is electrically connected to the strain gauge, 201116812.
且能偵測該應變規211的當前電阻值，並得知該應變規211的 電阻值變化量，因此，當該晶圓30推抵該探針23，且使該擺 臂21產生彎折變形時，該控制單元24便能得知該應變規211 的電阻值變化量’嗣’該控鮮元24會侧先制獲得之一 對照表，將該電阻值變化量轉換為一重量單位（如：公克）， 其中，由於該擺臂21向上發生彎折變形時，其自身會欲恢復 到原先的狀態’故會產生—向下的恢復力，因此，該對照表乃 是業者依預先實測後，得知當該應變規211之電阻值變化量為 某一數值時，所代表該擺臂21會使該探針23產生的對應下壓 力量，如此，業者便能透過偵測該應變規211之電阻值變化 量，間接得知目前該晶目30 6承受多少重量的下壓力量，並 在該晶圓30已承受預定的下壓力量後，即停止該晶圓3〇的移 動，使得聰針23的下壓力量能符合業者的需求，且不會過 大或過小’除騎免損傷該晶圓3Q之⑽晶粒的表面外，更 能使該探針23無晶圓3G之·晶粒的表面接職好，進而 達到精準控制該探針23之下壓力量的效果。 請參閱第2及3圖所示，其中第3圖乃為凸顯本案的技術 特徵，故意誇張繪製擺臂21的彎曲變形態樣，實際上，該擺 臂21僅需輕微變形，即會影響應變規211的電阻值，合= 明。舉例而言，假設業者預定該探針23僅對該晶圓3〇°產生 1〇公克的下壓力量，當讀人員驅動—馬達32，且使該馬達 32帶動-承載盤33朝該探針23的方向位移時，置放於該承 载盤33上的晶圓30 #會逐漸靠近該探針23的彎折部測， 直至該晶11 30被該㈣部231所抵靠，此時，由於該應變規 201116812 211的電阻值變化量，尚未達到對照表之1〇公克的數值，故 該承載盤33仍會持續上移，迫使該晶圓3〇對該探針烈施加 一向上的作用力，進而造成該擺臂21發生彎折變形，但同時， 該晶圓30亦會承受該探針23所施加的下壓力量，嗣，當該擺 臂21被彎折變形到一定程度，且該應變規211的電阻值變化 量已達到該對照表之10公克的數值後，該馬達32即會停止帶 動s亥承載盤33，以避免該探針23所施加的下壓力量過大，而 損壞了該晶圓30的表面，故，藉由本發明之點測裝置2的整 體設計，實能大幅提升該點測裝置2的偵測靈敏度及精準度， 且能有效避免因施加過大的下壓力量而損壞該晶圓3〇。 在此特別一提者’本發明之點側裝置能夠使用傳統的探針 夾持部及探針（即未設有水平部與彎折部），而非僅限定於前 述實施例所揭示的探針，以能細於更多元設計的點測裝置 上’綜上所述可知，本發明之點測裝置乃是透過應變規的電阻 值變化量，加上透過控制單元的自動控制，始達到精準控制探 針對晶_下壓力量’故能避免如同傳統的點測裝置般，因人 工調整彈性元件所造成的誤歸況，其次，由於本發明之點測 裝置並未使用機械開關的設計，故省略了彈性元件的設置，同 時’該探針係採用f折的設計，使其_端組裝至該探針央持部 中，故能大幅縮小該點測裝置的體積，以達到薄型化的設計， 並使積分球能更接近待檢測的晶圓，增加檢測的準確性。 按，以上所述，僅係本發明之較佳實施例，惟，本發明所 主張之權利範圍，並不侷限於此，按凡熟悉該項技#人士，依 據本發明所揭露之技術内容，可輕易思及之等效變化，均應屬 201116812 不脫離本發明之保護範疇。 【圖式簡單說明】 第1圖係傳統的點測裝置示意圖； 第2圖係本發明之點測裝置的一示意圖；及 第3圖係本發明之點測裝置的另一示意圖。 【主要元件符號說明】The current resistance value of the strain gauge 211 can be detected, and the resistance value of the strain gauge 211 is changed. Therefore, when the wafer 30 is pushed against the probe 23, the swing arm 21 is bent and deformed. When the control unit 24 can know the resistance value change amount '嗣' of the strain gauge 211, the control unit 24 will first obtain a comparison table, and convert the resistance value change amount into one weight unit (for example: (g), wherein, since the swing arm 21 is bent and deformed upward, it will return to its original state, so it will produce a downward resilience. Therefore, the comparison table is determined by the operator according to the pre-measurement. It is known that when the resistance value of the strain gauge 211 is a certain value, the swing arm 21 represents the corresponding amount of downward pressure generated by the probe 23, so that the operator can detect the strain gauge 211. The amount of change in the resistance value indirectly knows how much the amount of downward pressure the crystal lens is currently subjected to, and after the wafer 30 has been subjected to a predetermined amount of depression, the movement of the wafer 3 is stopped, so that the needle is clamped. 23 downforce can meet the needs of the industry, and will not Large or too small 'In addition to riding the surface of the (10) die of the wafer 3Q, the surface of the wafer 23 without the wafer 3G can be better handled, thereby achieving precise control of the probe 23 The effect of the amount of pressure. Please refer to the second and third figures. The third figure is to highlight the technical features of the case. It deliberately exaggerates the bending deformation of the swing arm 21. In fact, the swing arm 21 only needs slight deformation, which will affect the strain. The resistance value of gauge 211, combined = clear. For example, suppose the operator predetermines that the probe 23 only generates a depression amount of 1 gram for the wafer 3°, when the person drives the motor 32, and causes the motor 32 to drive the carrier 33 toward the probe. When the direction of 23 is displaced, the wafer 30 # placed on the carrier 33 will gradually approach the bent portion of the probe 23 until the crystal 11 30 is abutted by the (four) portion 231. The resistance value of the strain gauge 201116812 211 has not reached the value of 1 gram of the comparison table, so the carrier 33 will continue to move upward, forcing the wafer 3 to exert an upward force on the probe. And causing the swing arm 21 to be bent and deformed, but at the same time, the wafer 30 also receives the amount of downward pressure applied by the probe 23, and when the swing arm 21 is bent and deformed to a certain extent, After the resistance value of the strain gauge 211 has reached the value of 10 gram of the comparison table, the motor 32 stops driving the s-holding tray 33 to prevent the amount of downward pressure applied by the probe 23 from being excessively large and damaged. The surface of the wafer 30, and thus, by the overall design of the spotting device 2 of the present invention, This point can significantly enhance the detection sensitivity and precision measuring device 2, and can effectively avoid a large amount of pressure is applied through the damage to the wafer 3〇. In particular, the point-side device of the present invention can use a conventional probe clamping portion and a probe (that is, no horizontal portion and a bent portion are provided), and is not limited to the disclosure disclosed in the foregoing embodiment. The needle is designed to be finer than the more-designed spot measuring device. As can be seen from the above, the spot measuring device of the present invention is the amount of change in the resistance value transmitted through the strain gauge, plus the automatic control through the control unit. Accurately controlling the amount of pressure of the probe to the crystal_down can avoid the misplacement caused by the manual adjustment of the elastic component like the conventional spot measuring device. Secondly, since the spot measuring device of the present invention does not use the design of the mechanical switch, Therefore, the arrangement of the elastic element is omitted, and the probe is designed with a f-fold, so that the _ end is assembled into the probe holding portion, so that the volume of the measuring device can be greatly reduced to achieve a thinner thickness. Design and bring the integrating sphere closer to the wafer to be inspected, increasing the accuracy of the inspection. The above is only the preferred embodiment of the present invention, but the scope of the claimed invention is not limited thereto, and according to the technical content disclosed by the present invention, Equivalent changes that can be easily considered are all in accordance with the protection scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a conventional spot measuring device; Fig. 2 is a schematic view of a spot measuring device of the present invention; and Fig. 3 is another schematic view of the spot measuring device of the present invention. [Main component symbol description]
點測裝置 …… 2 擺臂 …… 21 應變規 …… 211 探針夾持部…… 22 探針 …… 23 彎折部 …… 231 水平部 …… 232 控制單元 ......24 晶圓 30 固定端 …… 31 馬達 …… 32 承載盤 …… 33 夾角 Θ 11Spot measuring device... 2 Swing arm... 21 Strain gauge... 211 Probe clamping section... 22 Probe... 23 Bending section... 231 Horizontal section... 232 Control unit...24 crystal Round 30 fixed end... 31 motor... 32 carrier plate... 33 angle Θ 11