201115794 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光二極體封裝，特別係關於一種 發光二極體封裝結構及其製備方法。 【先前技術】 現今’可攜式移動裝置如筆記型電腦、個人數位助理 (Personal Digital Assistant)或手機等陸陸續續地採用以發 光二極體為光源之背光模組作為其顯示用之照明。隨著這 些可攜式移動裝置往輕、薄發展，使得運用於其上之發光 二極體之體積也必須變得更小。 為上述之目的’美國專利申請案第2〇〇6/〇,284,2〇7號揭 示一種發光二極體封裝結構，其包含一基板、形成之該基 板上之一内電極、設置於該基板上之一發光二極體以及覆 蓋該發光二極體與該基板之一覆蓋材料。前述之發光二極 體封裝結構另具有垂直電極及設於背面之外電極，垂直電 極連接於前述之内電極與外電極，藉此導通内電極與外電 極。然而，由於前述之發光二極體封裝結構之體積小，因 此其外電極小’不利於外部電性連接或電性檢測。而且， 由於外部電極位在背面，使得前述之發光二極體封裝結構 之安裝態樣受限。 由於傳統上小體積的發光二極體仍未臻完善，因此有 必要提供新的無前述缺失之小體積的發光二極體。 【發明内容】 鑑於刚述之缺失，本發明提供一種發光二極體封裝結 3 -4- 201115794 構及其製備方法。本發明揭示之方法結合攒槽技術與板材 貼合技術，使發光二極體可以正向與側向等態樣安裝，且 使其檢測上更為便利。 本發明一實施例揭示一種發光二極體封裝結構，其包 含一基部、一電極部、一對内電極、一對外電極、一對導 電柱、一發光二極體晶粒以及一覆蓋層。基部具一第一表 面。電極部連接於該基部’且位於該第一表面之相反側。 電極部具與該第一表面相對之一第二表面及周繞該第二表 面之一側面。該些内電極設置於該第一表面上。各外電極 包含一端面段與一側面段，其中該側面段係自該端面段延 伸。該些端面段相對應於該些内電極設置於該第二表面。 各該側面段位於相對應之該電極部之該側面。該些導電柱 穿設於該些内電極與該些外電極之間。發光二極體晶粒設 置於該第一表面上，且電性連接該些内電極。覆蓋層覆蓋 於該發光二極體晶粒。 本發明一實施例揭示一種發光二極體封裝結構之製備 方法，該方法包含下列步驟：提供一第一基板，其包含一 第一金屬層；於該第一基板上，形成複數條貫穿之溝槽， 以獲得複數條條狀結構；提供一第二基板，包含一第二金 屬層；接合該第一基板與該第二基板，其中該第—金屬層 與該第二金屬層係位於外側；蝕刻該第一金屬層與該第二 金屬層’使得各該條狀結構上形成兩分離之條狀第一金屬 層’且在第一基板上形成相對應之兩條狀第二金屬層；於 各相對應之該第一金屬層與該第二金屬層間，形成複數個 201115794 導電柱；電鍵該些條狀第-金屬層與該些條狀第二金屬層 ，以獲得相對應之複數條外電極層與複數條内電極層；根 據該些導電柱之位置，將複數個發光二極體晶粒沿各該條 狀結構電性連接於相鄰之該些内電極層；形成一覆蓋層覆 蓋該些發光二極體晶粒上；於該覆蓋層上，沿該些溝槽與 沿橫向於該溝槽排列之相鄰兩列之該些發光二極體晶粒之 間，形成複數道縱橫交錯之切割道；模塑該切割道，以形 成一格狀件；以及沿該格狀件之各框架進行切割。 • 【實施方式】 參照圖1至圖3，本發明一實施例揭示一種發光二極體 封裝結構1，其包含一基部丨丨、一電極部12、一對導電柱η 、一對内電極14、一對外電極15、一發光二極體晶粒16、 一覆蓋層17以及一反射件18。基部u具一第一表面m，發 光二極體晶粒16設置於該第一表面111<}電極部12連接於基 部11，且如圖3所示，位於第一表面lu之相反側。 參照圖3所示，電極部12具一第二表面121和一側面122 ，第二表面121相對於第一表面ln呈反向設置又側面122 周繞著該第二表面121。一對貫穿孔19穿設於基部n和電極 部12，並介於第一表面lu與第二表面121之間。各貫穿孔 19中形成相對應之導電柱13。一對内電極14設置於第一表 面πι上，相對應於貫穿孔19設置，並與導電柱13相連接。 各外電極15包含一端面段151以及一側面段152，各該端面 段151位在第二表面121上，相對應於貫穿孔19設置，並連 接相對應之導電柱13。各外電極15之側面段152則自該端面 [S } -6 - 201115794 段151延伸，而形成於電極部12之側面ι22之表面。藉由導 電柱13之連接，使一對内電極14可分別地與一對外電極。 電性連接。 再次參照圖3所示，在本案實施例中，發光二極體晶粒 16設置於一對内電極14之一者上方，並以一導線2〇連接該 發光二極體晶粒16與該一對内電極14之另一者上。反射件 18设置於基部η之第一表面lu上，圍繞於該發光二極體晶 粒16，藉此可將發光二極體晶粒丨6之側向發光往反射件i 8 開口處反射，以增進本案發光二集體封裝結構i之發光效率 。覆蓋層17填充於反射件18内，覆蓋著發光二極體晶粒16 及第一表面111。 特而言之，本案實施例中，基部〗丨可從印刷電路板或 陶瓷基板裁切而成，其可為長方體形狀。電極部12亦可從 印刷電路板或陶瓷基板裁切而成，其亦可具長方體形狀， 其寬度可與基部11之寬度相當，而其長度可小於基部丨丨之 長度。基部11與電極部丨2間可利用一黏膠29黏接。内電極 14與外電極15之材質可包含鎳金或鎳銀等之合金。導通内 電極14與外電極15之導電柱13之材料可為導電膠，其可包 含環氧樹脂及摻雜於其中之銀粉末。外電極15分別形成於 導電柱13之一端，並向垂直電極部12長軸之兩端部表面延 伸，如此外電極15之外型係為]^形之帶狀。覆蓋層17可為一 螢光層，螢光層可吸收部份發光二極體晶粒16之發光，產 生可互補發光二極體晶粒16之發光之光線。反射件18係為 反射材料所製作’其可包含二氧化鈦。 201115794 圖4至圖15係一製程流程結構示意圖，其顯示本發明一 實施例所揭示之一種發光二極體封裝結構之製備方法。參 照圖4所示，本實施例揭示之方法首先提供一第一基板以 ，其中第一基板21可為印刷電路板或陶瓷基板。然後，在 第一基板21之一表面上形成一第—金屬層22，其中該第一 金屬層22可為一銅箔。 立圖5A顯示本發明一實施例之一第一基板21，之俯視示 意圖，而圖5B係圖5A沿B-B割面線之剖視圖。利用榜槽技 術，形成具複數條沿一特定方向上間隔排列之貫穿溝槽23 之第一基板21’。換言之，複數條溝槽之形成，使第一基板 21刀割出複數條條狀結構28，其中各條狀結構“係沿橫向 於該特定方向上延伸。溝槽23亦貫穿原第一金屬層，使第 一金屬層22'上具複數條狀鏤空。 參照圖6所示，提供一第二基板24 ’且在第二基板24 上形成一第二金屬層25,其中該第二金屬層乃可為銅箔。 接著，利用黏膠29將第一基板21，與第二基板24黏合，其中 第一金屬層22’與第二金屬層25分別位於兩相反之外側。 參照圖7所示，利用蝕刻技術，將第一金屬層22,與第二 金屬層25分別蝕刻成位置上彼此相對應且獨立之複數條狀 第一金屬層22’’與複數條狀第二金屬層25,。 參照圖8所示，利用機械鑽孔或雷射鑽孔的方法，沿各 條狀結構28之縱向上（垂直紙面方向），在兩第二金屬層 25’之位置，形成複數對成對的貫穿孔19。特言之，該些貫 穿孔19在橫向於條狀結構28之方向上可對齊。成對之貫穿 201115794 孔19於條狀結構28之縱向上可以等間距方式排列。 參照圖9所示’將導電膠分別填充於各貫穿孔19，待導 電膠凝固後，形成複數根導電柱13。前述之導電膠可包含 環氧樹脂及昆合於其中之銀粉末。 參照圖10所示’利用電鑛技術，電鏟第一金屬層22，， 與第二金屬層25’之表面。電鍍製程使各第一金屬層22"處形 成相對應之條狀外電極層27，其中由於各條狀結構28旁的 侧面上同時電鍍有金屬層，使各外電極層27之橫向截面具 有L外型。同樣地，電鍍製程亦使第二金屬層25,上形成條 狀内電極層26，其中内電極層26與外電極層27可藉導電柱 13電性導通。内電極層26與外電極層27可包含鎳金或鎳銀 等合金。 參照圖11所示，複數個發光二極體晶粒16沿條狀結構 28之縱向及橫向上設置在内電極層26上。各發光二極體晶 粒16位於内電極層26和一導電柱13之連接所在，且以至少 一導線20於條狀結構28之橫向上電性連接位在同一條狀結 構28上之另一内電極層％及相鄰導電柱13之連接位置所在 。換言之，各發光二極體晶粒16位於成對之一導電柱13之 位置上且電性連接内電極層26，然後利用一導線2〇電性連 接至同對之另一導電柱13之位置上之内電極層26。 參照圖12所示，利用轉注成型（transfer m〇iding)或射出 成型（injection molding)將覆蓋層17形成在第二基板24上， 並覆蓋該些發光二極體晶粒16及該些内電極層26 ^覆蓋層 17可為具螢光粉之透明膝層，例如摻雜螢光粉之環氧樹脂 [S] -9- 201115794 參照圖13所示，在相對應於條狀結構28間之溝槽23之 位置上，以及橫向於溝槽23排列之相鄰兩列之發光二極體 晶粒16之間之位置上，以切割的方法形成複數道縱橫交錯 之切割道30於覆蓋層17上。參照圖14所示，利用轉注成型 (transfer molding)或射出成型（injecti〇n爪“以吨）將圖^所 示之切割道30 ’以反射材料填充。待固化後，即形成一格 狀件32。格狀件32之高度可與覆蓋層17之高度相當。格狀 件32之材質可包含二氧化鈦等反光性佳之材料。 參照圖15所示，最後沿格狀件32之各框架，在約略等 分之位置上，將格狀件32及其下方之第二基板24切斷，即 可獲得複數個獨立具反射件1 8的發光二極體封裝結構1。 參照圖16所示，本發明另一實施例揭示一種發光二極 體封裝結構Γ包含一基部11、一電極部12、一對導電柱13 、一對内電極14、一對外電極15、一發光二極體晶粒16 ' 一覆蓋層17以及一反射件18。電極部12連接於基部11，且 位於第一表面111之相反側。導電柱13貫穿第一表面U1& 第二表面121，内電極14與外電極15分別形成於相對應之導 電柱13之兩端’使内電極14與外電極15可藉由導電柱13電 性連接。 發光一"極體晶粒16以覆晶接合之方式，以凸塊31電性 連接於内電極14。反射件18設置於基部11之第一表面111上 ，圍繞於該發光二極體晶粒16'，藉此可將發光二極體晶粒 16之側向發光，往反射件1 8開口處反射。覆蓋層1 7填充於 •10· 201115794 反射件18内，覆蓋著發光二極體晶粒16及第一表面U1。 综上所述，相較於習知發光二極體之封裝方法，本發 明一實施例揭示之方法結合撈槽技術與板材貼合技術，使 發光二極體可以正向與側向等態樣安裝，且由於電極可延 伸至侧向設置’因此使發光二極體在檢測上更為便利。 本發明之技術内容及技術特點已揭示如上，然而熟来 本項技術之人士仍可能基於本發明之教示及揭示而作種種 不背離本發明精神之替換及修飾。因此，本發明之保護範 圍應不限於實施例所揭示者，而應包括各種不背離本發明 之替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡要說明】 圖1顯示本發明一實施例之發光二極體封裝結構之俯 視示意圖； 圖2顯示本發明一實施例之發光二極體封裝結構之仰 視不意圖； 圖3係圖1沿A-A割面線之剖視示意圖； 圖4至圖15顯示本發明一實施例之發光二極體封骏钟 構之製造流程示意圖；及 圖16顯示本發明另一實施例之發光二極體封裝結構之 剖視示意圖。 【主要元件符號說明】 I ' Γ 發光二極體封裝結構 II 基部 12 電極部201115794 VI. Description of the Invention: [Technical Field] The present invention relates to a light emitting diode package, and more particularly to a light emitting diode package structure and a method of fabricating the same. [Prior Art] Nowadays, a portable mobile device such as a notebook computer, a personal digital assistant or a mobile phone continuously uses a backlight module using a light-emitting diode as a light source as illumination for display. As these portable mobile devices develop lightly and thinly, the volume of the light-emitting diodes applied thereto must also become smaller. A light-emitting diode package structure comprising a substrate, an inner electrode formed on the substrate, and disposed thereon is disclosed in the above-mentioned U.S. Patent Application Serial No. 2,6,,,,,,,, a light-emitting diode on the substrate and covering the light-emitting diode and a covering material of the substrate. The above-mentioned light emitting diode package structure further has a vertical electrode and an electrode disposed on the back surface, and a vertical electrode is connected to the inner electrode and the outer electrode to electrically connect the inner electrode and the outer electrode. However, since the aforementioned light-emitting diode package structure is small in size, its outer electrode is small, which is disadvantageous for external electrical connection or electrical detection. Moreover, since the external electrode is on the back side, the mounting aspect of the above-described light emitting diode package structure is limited. Since the conventional small-volume light-emitting diodes are still not perfect, it is necessary to provide a new small-sized light-emitting diode without the aforementioned defects. SUMMARY OF THE INVENTION In view of the shortcomings described, the present invention provides a light emitting diode package junction 3-4-201115794 structure and a preparation method thereof. The method disclosed in the present invention combines the technique of grooving and sheet metal bonding, so that the light-emitting diode can be installed in the forward and lateral directions, and the detection is more convenient. An embodiment of the present invention discloses a light emitting diode package structure including a base portion, an electrode portion, a pair of internal electrodes, a pair of external electrodes, a pair of conductive pillars, a light emitting diode die, and a cover layer. The base has a first surface. The electrode portion is coupled to the base portion & is located on the opposite side of the first surface. The electrode portion has a second surface opposite to the first surface and a side surface of the second surface around the second surface. The inner electrodes are disposed on the first surface. Each of the outer electrodes includes an end section and a side section, wherein the side section extends from the end section. The end face segments are disposed on the second surface corresponding to the inner electrodes. Each of the side segments is located on the side of the corresponding electrode portion. The conductive pillars are disposed between the inner electrodes and the outer electrodes. The illuminating diode dies are disposed on the first surface and electrically connected to the internal electrodes. A cover layer covers the light emitting diode grains. An embodiment of the invention discloses a method for fabricating a light emitting diode package structure, the method comprising the steps of: providing a first substrate comprising a first metal layer; and forming a plurality of grooves through the first substrate a second substrate, comprising a second metal layer; bonding the first substrate and the second substrate, wherein the first metal layer and the second metal layer are located outside; Etching the first metal layer and the second metal layer ' such that two separate strip-shaped first metal layers are formed on each strip structure and forming corresponding two second metal layers on the first substrate; Between the corresponding first metal layer and the second metal layer, a plurality of 201115794 conductive pillars are formed; and the strip-shaped metal-layers and the strip-shaped second metal layers are electrically connected to obtain a plurality of corresponding strips The electrode layer and the plurality of inner electrode layers; according to the positions of the conductive pillars, a plurality of light emitting diode crystal grains are electrically connected to the adjacent inner electrode layers along the strip structures; forming a cover layer covering Some of these On the photodiode, on the cover layer, a plurality of cross-cutting cuts are formed along the trenches and the adjacent two rows of the light-emitting diodes arranged adjacent to the trench The scribe line is molded to form a lattice member; and the cutting is performed along each of the frames of the lattice member. [Embodiment] Referring to FIG. 1 to FIG. 3, an embodiment of the present invention discloses a light emitting diode package structure 1 including a base portion, an electrode portion 12, a pair of conductive columns η, and a pair of internal electrodes 14. An external electrode 15, a light emitting diode die 16, a cover layer 17, and a reflective member 18. The base portion u has a first surface m, and the light-emitting diode die 16 is disposed on the first surface 111. The electrode portion 12 is connected to the base portion 11, and is located on the opposite side of the first surface lu as shown in FIG. Referring to FIG. 3, the electrode portion 12 has a second surface 121 and a side surface 122. The second surface 121 is disposed opposite to the first surface ln and the side surface 122 surrounds the second surface 121. A pair of through holes 19 are bored through the base portion n and the electrode portion 12 and interposed between the first surface lu and the second surface 121. Corresponding conductive pillars 13 are formed in each of the through holes 19. A pair of inner electrodes 14 are disposed on the first surface πι, corresponding to the through holes 19, and connected to the conductive posts 13. Each of the outer electrodes 15 includes an end face segment 151 and a side face segment 152. Each of the end face segments 151 is located on the second surface 121, corresponding to the through hole 19, and is connected to the corresponding conductive post 13. The side section 152 of each of the outer electrodes 15 extends from the end surface [S } -6 - 201115794 section 151 and is formed on the surface of the side surface ι 22 of the electrode portion 12. The pair of inner electrodes 14 can be respectively connected to a pair of external electrodes by the connection of the conductive posts 13. Electrical connection. Referring again to FIG. 3, in the embodiment of the present invention, the light emitting diode die 16 is disposed above one of the pair of internal electrodes 14, and the light emitting diode die 16 is connected to the light by a wire 2? On the other of the inner electrodes 14. The reflector 18 is disposed on the first surface lu of the base η and surrounds the LED die 16 , whereby the lateral illumination of the LED die 6 can be reflected toward the opening of the reflector i 8 . In order to improve the luminous efficiency of the light-emitting two collective package structure i of the present invention. The cover layer 17 is filled in the reflector 18 and covers the LED die 16 and the first surface 111. In particular, in the embodiment of the present invention, the base portion can be cut from a printed circuit board or a ceramic substrate, which can have a rectangular parallelepiped shape. The electrode portion 12 may also be cut from a printed circuit board or a ceramic substrate, and may have a rectangular parallelepiped shape having a width comparable to the width of the base portion 11 and a length smaller than the length of the base portion. The base 11 and the electrode portion 2 can be bonded by an adhesive 29. The material of the inner electrode 14 and the outer electrode 15 may include an alloy of nickel gold or nickel silver. The material of the conductive pillar 13 that turns on the inner electrode 14 and the outer electrode 15 may be a conductive paste, which may include an epoxy resin and silver powder doped therein. The outer electrodes 15 are respectively formed at one end of the conductive post 13 and extend toward the surface of both end portions of the long axis of the vertical electrode portion 12, so that the outer electrode 15 has a strip shape. The cover layer 17 can be a phosphor layer that absorbs the light of a portion of the light-emitting diode die 16 to produce light that illuminates the complementary light-emitting diode die 16. The reflector 18 is made of a reflective material. It may comprise titanium dioxide. 201115794 FIG. 4 to FIG. 15 are schematic diagrams showing the structure of a process flow, which shows a method for preparing a light-emitting diode package structure according to an embodiment of the present invention. Referring to FIG. 4, the method disclosed in this embodiment first provides a first substrate, wherein the first substrate 21 can be a printed circuit board or a ceramic substrate. Then, a first metal layer 22 is formed on one surface of the first substrate 21, wherein the first metal layer 22 may be a copper foil. Fig. 5A shows a plan view of a first substrate 21 according to an embodiment of the present invention, and Fig. 5B is a cross-sectional view taken along line B-B of Fig. 5A. Using the grid technology, a first substrate 21' having a plurality of through-grooves 23 spaced apart in a particular direction is formed. In other words, the plurality of grooves are formed such that the first substrate 21 is cut into a plurality of strip structures 28, wherein each strip structure "extends in a transverse direction to the specific direction. The grooves 23 also penetrate the original first metal layer. The first metal layer 22' has a plurality of strips hollowed out. Referring to FIG. 6, a second substrate 24' is provided and a second metal layer 25 is formed on the second substrate 24, wherein the second metal layer is The first substrate 21 is bonded to the second substrate 24 by the adhesive 29, wherein the first metal layer 22' and the second metal layer 25 are respectively located on opposite sides. Referring to FIG. 7, The first metal layer 22 and the second metal layer 25 are respectively etched into a plurality of strip-shaped first metal layers 22'' and a plurality of strip-shaped second metal layers 25 corresponding to each other in position by an etching technique. As shown in FIG. 8, by means of mechanical drilling or laser drilling, a plurality of pairs of pairs are formed along the longitudinal direction of each strip structure 28 (vertical paper direction) at the positions of the two second metal layers 25'. Holes 19. In particular, the through holes 19 are transverse to the strip structure 28 The orientations of the holes 19 can be aligned in the longitudinal direction of the strip structure 28. The holes can be filled in the through holes 19 respectively after the conductive paste is solidified. Forming a plurality of conductive pillars 13. The foregoing conductive paste may comprise an epoxy resin and a silver powder encapsulated therein. Referring to FIG. 10, 'using the electric ore technique, the first metal layer 22 of the electric shovel, and the second metal layer The surface of the 25'. The electroplating process forms a corresponding strip-shaped outer electrode layer 27 at each of the first metal layers 22", wherein the outer electrode layer 27 is formed by simultaneously plating a metal layer on the side surface beside each strip-like structure 28. The lateral cross section has an L shape. Similarly, the electroplating process also forms a strip-shaped internal electrode layer 26 on the second metal layer 25, wherein the inner electrode layer 26 and the outer electrode layer 27 can be electrically connected by the conductive pillars 13. The electrode layer 26 and the outer electrode layer 27 may comprise an alloy such as nickel gold or nickel silver. Referring to Fig. 11, a plurality of light emitting diode crystal grains 16 are disposed on the inner electrode layer 26 in the longitudinal and lateral directions of the strip structure 28. Each light-emitting diode die 16 is located inside The connection between the pole layer 26 and a conductive post 13 is performed, and at least one wire 20 is electrically connected to the other inner electrode layer % and the adjacent conductive pillar 13 located on the same strip structure 28 in the lateral direction of the strip structure 28 . In other words, each of the light-emitting diode dies 16 is located at a position of a pair of conductive pillars 13 and is electrically connected to the inner electrode layer 26, and then electrically connected to the same pair by a wire 2 The inner electrode layer 26 at the position of the conductive post 13. Referring to Fig. 12, the cover layer 17 is formed on the second substrate 24 by transfer molding or injection molding, and covers the The light-emitting diode die 16 and the inner electrode layer 26 can be a transparent knee layer with a phosphor powder, such as an epoxy resin doped with phosphor powder [S] -9- 201115794. The position is formed by a cutting method at a position corresponding to the groove 23 between the strip structures 28 and between the adjacent two rows of the light emitting diode crystal grains 16 arranged transversely to the groove 23. A plurality of criss-crossing dicing streets 30 are on the cover layer 17. Referring to Fig. 14, the dicing road 30' shown in Fig. 2 is filled with a reflective material by transfer molding or injection molding (in tons). After being cured, a lattice member is formed. 32. The height of the lattice member 32 may be equivalent to the height of the cover layer 17. The material of the lattice member 32 may include a material having good light reflectivity such as titanium dioxide. Referring to Figure 15, the frames along the last lattice member 32 are approximated. At the position of the division, the lattice member 32 and the second substrate 24 therebelow are cut, thereby obtaining a plurality of light-emitting diode package structures 1 having the independent reflectors 18. The present invention is shown in FIG. Another embodiment discloses a light emitting diode package structure comprising a base portion 11, an electrode portion 12, a pair of conductive pillars 13, a pair of inner electrodes 14, a pair of external electrodes 15, and a light emitting diode die 16'. The cover layer 17 and a reflector 18. The electrode portion 12 is connected to the base portion 11 and is located on the opposite side of the first surface 111. The conductive post 13 extends through the first surface U1 & the second surface 121, and the inner electrode 14 and the outer electrode 15 respectively form At both ends of the corresponding conductive post 13 The pole 14 and the outer electrode 15 can be electrically connected by the conductive pillars 13. The light-emitting body < the polar body die 16 is electrically connected to the inner electrode 14 by the bump 31 in a flip chip bonding manner. The reflector 18 is disposed at the base The first surface 111 of the 11 surface surrounds the light-emitting diode die 16', whereby the lateral direction of the light-emitting diode die 16 can be emitted toward the opening of the reflector 18. The cover layer 17 is filled. In the reflector member 18, the light-emitting diode die 16 and the first surface U1 are covered. In summary, the package method of the conventional light-emitting diode is disclosed in an embodiment of the present invention. The method combines the groove technology and the plate bonding technology, so that the light-emitting diode can be installed in the forward and lateral isomorphism, and the electrode can be extended to the lateral direction, thus making the light-emitting diode more convenient to detect. The technical content and technical features of the present invention have been disclosed as above, but those skilled in the art may still make various substitutions and modifications without departing from the spirit and scope of the present invention based on the teachings and disclosure of the present invention. Therefore, the scope of protection of the present invention should be Not limited to the embodiments disclosed, The present invention is intended to cover various alternatives and modifications of the present invention, and is covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top plan view showing a light emitting diode package structure according to an embodiment of the present invention; FIG. 3 is a cross-sectional view of the light-emitting diode package of FIG. 1 along the line AA; FIG. 4 to FIG. 15 show the light-emitting diode of the embodiment of the present invention. FIG. 16 is a cross-sectional view showing a light emitting diode package structure according to another embodiment of the present invention. [Main element symbol description] I ' 发光 Light emitting diode package structure II base portion 12 electrode portion
•11· 201115794 13 導電柱 14 内電極 15 外電極 16、16' 發光二極體晶粒 17 覆蓋層 18 反射件 19 貫穿孔 20 導線•11· 201115794 13 Conductive column 14 Internal electrode 15 External electrode 16, 16' Light-emitting diode die 17 Cover layer 18 Reflector 19 Through-hole 20 Wire
2 1、2 Γ 第一基板 22、22'、22"第一金屬層 23 溝槽 24 25、 26 27 28 29 30 31 32 111 121 122 151 152 第二基板 25' 第二金屬層 内電極層 外電極層 條狀結構 黏膠 切割道 凸塊 格狀件 第一表面 面 第二表 側面 端面段 側面段2 1, 2 Γ first substrate 22, 22', 22 " first metal layer 23 trench 24 25, 26 27 28 29 30 31 32 111 121 122 151 152 second substrate 25' second metal layer outside the electrode layer Electrode layer strip structure viscose cutting track bump grid first surface surface second surface side end section side section
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