201114874 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種晶粒接附膜、半導體晶圓及半導體 封裝方法。 【先前技術】 隨著近來在手機或行動終端機中所用之半導體記憶之 高度整合及功能性的趨向，已頻繁地利用一種使用晶粒接 附_以疊置多個半導體晶片在半導體基材的方法》 晶粒接附膜包括在切割程序中用於固定半導體晶片之 壓敏性黏著層，及在晶粒結合程序中結合至半導體晶片背 面且接附至接線基材（如導線架）的黏著層。 使用晶粒接附膜之封裝程序通常包括將晶圓切割成晶 片之切割程序，將經切割之晶片結合至電路膜或導線架之 晶粒結合程序，使用電連接手段（諸如金屬線）將裝在半 導體晶片上之晶片墊與電路膜或導線架之電路圖形連接的 金屬線連接程序，及使用包封（encapsulating)材料將經 結合金屬線之半導體晶片包封以保護半導體晶片之內部電 路及其他部分的模製程序。 在切割程序中，藉由例如鑽石輪將晶圓切成預定厚度 。當施加過度之壓力或有機械衝擊時，產生因晶圓受破壞 所引起之碎裂及能污染圖形之毛邊。近來，因爲晶圓厚度 減低以減低封裝尺寸及增加生產效率所需更嚴苛的切割條 件，此問題更加嚴重。特別地，隨著晶圓變得更薄，在以 -5- 201114874 前尙未造成問題之毛邊被發現逐漸更多地自晶粒往上突出 ，因此顯著地降低晶片之接附加工性，且污染圖形而降低 封裝可靠性。 爲降低此種毛邊，大部分已知的技術已適應膜之物理 性質或參數（諸如處理條件）的改變。然而，當企圖經由 調節切割程序之參數以抑制毛邊時，在隨後程序（亦即晶 粒結合程序）中擴展性降低，或晶片不容易取出。另外， 當將晶片取出時，則位置誤差會在進行晶粒結合時發生， 或因切割不足，在晶粒之上發生碎裂。 在半導體封裝程序中，在切割程序之後從膜脫離之包 括黏合層之晶片經結合至接線的基材（亦即導線架等）， 然後進行之後的程序，包括模製程序。現今，在晶粒結合 程序之後，必須在高溫下進行預先固化程序。此固化程序 是要防止失敗，諸如在另一個半導體晶片從膜脫離且疊置 在接線之基材的晶片上時，下方晶片被推動的現象；或該 晶片因模樹脂流動而偏向一側的現象。然而，進行當預先 固化程序時，黏合劑開始固化，且因此與之後程序中半導 體基材相關之包埋性被降低。另外，因在預先固化程序中 所施加之熱，晶圓或基材經翹曲，以致當進行金屬線結合 時可能發生諸如彈起之失敗。就此而論，有可能大幅地降 低半導體封裝之可靠性。 【發明內容】 提供晶粒接附膜、使用彼之半導體晶圓及使用彼之半 • 6 - 201114874 導體封裝方法，以克服先前技藝中所發生之問題。 本發明一方面係提供一種晶粒接附膜，其包括基底膜 在該基底膜上之壓敏性黏著劑部分、及形成在該壓 敏性黏著劑部分上之黏著劑部分。在晶粒接附膜中，基底 膜、壓敏性黏著劑部分及黏著劑部分之厚度分別以A、B 及C表示，且b/a之値在0.15至（K5範圍內，且B/C之 値在0.2至4範圍內。 本發明另一方面提供一種包括該晶粒接附膜之半導體 晶圓，其中該晶粒接附膜之該黏著劑部分係接附至晶圓的 一個表面，且該晶粒接附膜之基底膜或壓敏性黏著劑部分 固定至晶圓環框。 本發明之另一方面提供一種半導體封裝方法，其包括 切割依本發明之半導體晶圓，且將經由該切割步驟製得的 半導體晶片取出。 【實施方式】 本發明係關於一種晶粒接附膜。此晶粒接附膜包括基 底膜、形成在該基底膜上之壓敏性黏著劑部分及形成在該 壓敏性黏著劑部分上之黏著劑部分。 在該晶粒接附膜中，該基底膜、該壓敏性黏著劑部分 及該黏著劑部分之厚度分別以A、B及C表示，且B/A之 値在0.15至0.5範圍內，且B/.C之値在0.2至4範圍內。 在下文中，將詳述本發明之晶粒接附膜。 本發明之晶粒接附膜可以經配置以使壓敏性黏著劑部 201114874 分（厚度：B)對基底膜（厚度：A)的厚度比（B/A)範 圍在0.15至0.5之間，較佳在0.2至0.4之間。若B/A低 於〇. 1 5，則壓敏性黏著劑部分與基底膜相比變得太薄，然 後在切割程序中可能產生過多量之毛邊，或因不良的擴展 性可能發生取出失敗。若B/A高於0.5，則在切割程序中 可能發生過多之碎裂，或膜之處理特性可能變壞。 本發明之晶粒接附膜也可以經配置以使該壓敏性黏著 劑部分（厚度：B)對該黏著劑部分（厚度：C)的厚度比 (B/C )範圍在0.2至4之間，較佳在0.5至4之間，且最 佳在0.5至3之間。若B/C低於0.2，則用於晶粒結合之 該黏著劑部分變得太薄，且在取出程序中可能僅可取出一 個晶粒。若B/C高於4，加工性可能過度降低。 只要構成本發明之晶粒接附膜之各層的厚度之間的關 係符合上述條件，則構成每一層之材料的種類不特別限定 〇 例如’作爲在本發明之晶粒接附膜中所包括之基底膜 ，可以使用在此領域中已知的典型塑膠膜或金屬箔片。塑 膠膜之實例可以包括但不限於選自以下之一膜或二或更多 膜之組合：烯烴膜，諸如聚丙烯膜或聚乙烯膜；聚酯膜， 諸如聚對苯二甲酸乙二酯膜；聚碳酸酯膜；聚氯乙烯膜； 聚四氟乙烯膜；聚丁烯膜；聚丁二烯膜；氯乙烯共聚物膜 •’乙嫌一乙酸乙稀醋共聚物膜：乙嫌一丙嫌共聚物膜；及 乙烯-丙烯酸乙酯共聚物膜。在此，“二或更多膜之組合 ”可以指明至少二種上述膜被疊置之膜或由上述樹脂之共 -8 - 201114874 聚物製成之膜。此基底膜也可以視需要進行典型之物理或 化學處理，諸如消光處理、電暈放電處理、底漆處理或交 聯處理。 在本發明中，也可以使用二軸伸長性彼此相似之膜作 爲基底膜。更特別地，可以使用一種膜，其中垂直方向（ MD )之伸長比例及水平方向（TD )之伸長比例之間的差 是垂直方向（MD )伸長比例的1 0%或更低，且較佳地是 5 %或更低。 基底膜之厚度不特別限定，只要彼滿足上述關係。例 如，基底膜厚度範圍可以在約lOym至約200 //m，較佳 地約80"m至約130ym，更佳地約80/zm至約lOOym 且最佳地約80#m至約90μηι。若基底膜厚度少於lOym ，則在切割程序中切割深度的調節變得不穩定。若基底膜 厚度多於200 /z m，則在切割程序中可能產生很多毛邊， 且伸長比例可能降低，以致使擴展錯誤。 另外，在使用UV (紫外光）可固化之壓敏性黏著劑 以供該壓敏性黏著劑部分的情況中，基底膜較佳具有優越 之UV透射率。例如，基底膜之UV透射率可以是70%或 更高，且較佳是90%或更高。 在晶粒接附膜中，構成該壓敏性黏著劑部分之壓敏性 黏著劑之種類無實質上的限制。例如，該壓敏性黏著劑可 以包括典型之UV可固化的壓敏性黏著劑或典型之熱可固 化的壓敏性黏著劑。在使用UV可固化之壓敏性黏著劑的 情況中，藉由從基底膜這一側照射UV可以降低壓敏性黏 -9 - 201114874 著劑的強度。在使用熱可固化之壓敏性黏著劑的情況中’ 藉由施加合適之熱可以降低壓敏性黏著劑強度。 在本發明中，鑒於取出可靠性，可以使用UV可固化 之壓敏性黏著劑。在此情況中，該壓敏性黏著劑部分可以 包括基底樹脂、UV可固化之化合物、光起始劑及交聯劑 。在本發明中，當壓敏性黏著劑部分據稱是包括以上成分 時，可以解釋爲該壓敏性黏著劑部分是以一種含有以上成 分之組成物或塗覆用溶液的經乾燥、半固化或固化之材料 形式存在。 基底樹脂之實例可以包括丙烯酸系樹脂。此丙烯酸系 樹脂之重量平均分子量可以是1〇〇,〇〇〇至1，500,000，且較 佳是 200,000至 1，〇〇〇,〇〇〇。若重量平均分子量少於 1 00,000，則可塗覆性或內聚力可能降低，且因此可能發 生一些殘留材料在脫離時留在附著體（adherend )上或該 壓敏性黏著劑被分解的現象。若重量平均分子量多於 1,500,000時，基底樹脂可以阻礙UV可固化之化合物的反 應，且因此壓敏性黏著劑之強度不能充分地降低。 例如，丙烯酸系樹脂可以是（甲基）丙烯酸酯單體及 具有可交聯官能基團之單體的共聚物。 在此，（甲基）丙烯酸酯單體之實例可以包括（甲基 )丙烯酸烷酯，及特別地，具有含1至12個碳原子之烷 基的單體，其實例可以包括選自以下之一者或二或更多者 之組合：（甲基）丙烯酸戊酯、（甲基）丙烯酸正丁酯、 (甲基）丙烯酸乙酯、（甲基）丙烯酸甲酯、（甲基）丙 -10- 201114874 稀酸己醋、（甲基）丙嫌酸正辛酯、（甲基）丙烯酸異辛 酯、（甲基）丙烯酸2-乙基己酯、（甲基）丙烯酸十二烷 酯、及（甲基）丙烯酸癸酯。在具有該烷基之單體的情況 中’該烷基之碳原子數目愈大，最終共聚物之玻璃轉換溫 度愈低。因此，單體可以依照所要之玻璃轉換溫度及類似 者而合適地選擇。 另外，具有可交聯官能基團之單體的實例可以包括選 自以下之一者或二或更多者之組合：具有羥基之單體、具 有羧基之單體、具有氮之單體。含羥基之單體的實例可以 包括但不限於（甲基）丙烯酸2 -羥基乙酯、（甲基）丙烯 酸2-羥基丙酯、及類似者。含羧基之單體的實例可以包括 但不限於（甲基）丙烯酸、及類似者。含氮之單體的實例 可以包括但不限於（甲基）丙烯腈、N -乙烯基吡咯烷酮、 N-乙烯基己內醯胺、及類似者。 丙烯酸系樹脂可以另外包括含有碳-碳雙鍵之低分子 量化合物，諸如乙酸乙烯酯、苯乙烯或（甲基）丙烯腈作 爲共聚單體以改良其他功能，諸如相容性。 在本發明中可用之UV可固化之化合物的種類無實質 上的限制。例如，UV可固化之化合物可以是具有約5 00 至約300,000重量平均分子量之多官能寡聚物化合物（例 如多官能之丙烯酸酯）。熟習此技藝者明瞭：可以容易地 選擇適於所要用途之寡聚物。201114874 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a die attach film, a semiconductor wafer, and a semiconductor package method. [Prior Art] With the recent high integration and functional trend of semiconductor memory used in mobile phones or mobile terminals, a use of die attaching _ to stack a plurality of semiconductor wafers on a semiconductor substrate has been frequently utilized. Method: A die attach film includes a pressure sensitive adhesive layer for holding a semiconductor wafer in a dicing process, and an adhesive bond bonded to a back surface of the semiconductor wafer and attached to a wiring substrate (such as a lead frame) in a die bonding process Floor. A package process using a die attach film typically includes a dicing process for dicing a wafer into a wafer, bonding the diced wafer to a die attach process of a circuit film or leadframe, and using an electrical connection means such as a metal wire. a metal wire connection process for connecting a wafer pad on a semiconductor wafer to a circuit pattern of a circuit film or a lead frame, and encapsulating a semiconductor wafer bonded with a metal wire using an encapsulating material to protect an internal circuit of the semiconductor chip and the like Part of the molding process. In the cutting process, the wafer is cut to a predetermined thickness by, for example, a diamond wheel. When excessive pressure or mechanical shock is applied, chipping due to damage to the wafer and burrs that can contaminate the pattern are generated. This problem has recently become more serious because of the reduced thickness of the wafer to reduce package size and increase the productivity required for more severe cutting conditions. In particular, as the wafer becomes thinner, the burrs that have not caused problems before -5 - 201114874 are found to gradually protrude more from the die, thus significantly reducing the attachability of the wafer, and Contamination patterns reduce package reliability. To reduce such burrs, most known techniques have adapted to changes in the physical properties of the film or parameters such as processing conditions. However, when it is attempted to suppress the burrs by adjusting the parameters of the cutting program, the spreadability is lowered in the subsequent procedure (i.e., the crystal bonding procedure), or the wafer is not easily taken out. In addition, when the wafer is taken out, the positional error occurs when grain bonding is performed, or chipping occurs on the crystal grains due to insufficient cutting. In the semiconductor packaging process, the wafer including the adhesive layer detached from the film after the dicing process is bonded to the substrate of the wiring (i.e., the lead frame, etc.), and then the subsequent processes, including the molding process. Nowadays, after the die bonding process, the pre-cure procedure must be performed at a high temperature. This curing procedure is to prevent failure, such as the phenomenon that the underlying wafer is pushed when another semiconductor wafer is detached from the film and stacked on the wafer of the wiring substrate; or the wafer is biased to one side due to the flow of the molding resin. . However, when the pre-curing procedure is performed, the adhesive begins to solidify, and thus the embedding property associated with the semiconductor substrate in the subsequent process is lowered. In addition, the wafer or substrate is warped due to the heat applied in the pre-cure procedure, so that failure such as bounce may occur when wire bonding is performed. In this connection, it is possible to significantly reduce the reliability of the semiconductor package. SUMMARY OF THE INVENTION A die attach film is provided, a semiconductor wafer is used, and a semiconductor package method is used to overcome the problems occurring in the prior art. In one aspect, the present invention provides a die attach film comprising a pressure sensitive adhesive portion of a base film on the base film, and an adhesive portion formed on the pressure sensitive adhesive portion. In the die attach film, the thicknesses of the base film, the pressure sensitive adhesive portion, and the adhesive portion are represented by A, B, and C, respectively, and the b/a is in the range of 0.15 to (K5, and B/C The present invention provides a semiconductor wafer including the die attach film, wherein the adhesive portion of the die attach film is attached to a surface of the wafer, And the base film or the pressure sensitive adhesive portion of the die attach film is partially fixed to the wafer ring frame. Another aspect of the present invention provides a semiconductor packaging method including cutting a semiconductor wafer according to the present invention, and The semiconductor wafer obtained by the cutting step is taken out. [Embodiment] The present invention relates to a die attach film comprising a base film, a pressure sensitive adhesive portion formed on the base film, and a formation An adhesive portion on the pressure-sensitive adhesive portion. In the die attach film, thicknesses of the base film, the pressure-sensitive adhesive portion, and the adhesive portion are represented by A, B, and C, respectively. And the B/A 値 is in the range of 0.15 to 0.5, and B/.C In the range of 0.2 to 4. Hereinafter, the die attach film of the present invention will be described in detail. The die attach film of the present invention may be configured such that the pressure sensitive adhesive portion 201114874 (thickness: B) is opposite to the substrate. The thickness ratio (B/A) of the film (thickness: A) ranges from 0.15 to 0.5, preferably from 0.2 to 0.4. If B/A is less than 11.5, the pressure-sensitive adhesive portion is The base film becomes too thin compared to the substrate, and may cause excessive amounts of burrs during the cutting process, or may fail to remove due to poor expandability. If B/A is higher than 0.5, excessive crushing may occur in the cutting process. The crack, or the handling characteristics of the film may be deteriorated. The die attach film of the present invention may also be configured such that the thickness ratio of the pressure sensitive adhesive portion (thickness: B) to the adhesive portion (thickness: C) (B/C) ranges from 0.2 to 4, preferably from 0.5 to 4, and most preferably from 0.5 to 3. If B/C is less than 0.2, the adhesive for grain bonding The part becomes too thin, and only one crystal grain may be taken out in the removal process. If the B/C is higher than 4, the workability may be excessively lowered. The relationship between the thicknesses of the respective layers of the die attaching film conforms to the above conditions, and the kind of the material constituting each layer is not particularly limited, for example, as the base film included in the die attach film of the present invention, Typical plastic films or metal foils known in the art are used. Examples of plastic films may include, but are not limited to, one selected from the group consisting of one or a combination of two or more films: an olefin film, such as a polypropylene film or polyethylene. Film; polyester film, such as polyethylene terephthalate film; polycarbonate film; polyvinyl chloride film; polytetrafluoroethylene film; polybutene film; polybutadiene film; 'B-one acetic acid ethylene vinegar copolymer film: B suspected a polypropylene copolymer film; and ethylene-ethyl acrylate copolymer film. Here, the "combination of two or more films" may indicate a film in which at least two of the above films are laminated or a film made of the above-mentioned resin -8 - 201114874 polymer. This base film can also be subjected to typical physical or chemical treatments such as matting treatment, corona discharge treatment, primer treatment or crosslinking treatment as needed. In the present invention, a film having biaxial elongation similar to each other can also be used as the base film. More specifically, a film may be used in which the difference between the elongation ratio of the vertical direction (MD) and the elongation ratio of the horizontal direction (TD) is 10% or less of the elongation ratio of the vertical direction (MD), and is preferably The ground is 5% or lower. The thickness of the base film is not particularly limited as long as it satisfies the above relationship. For example, the base film thickness may range from about 10 μm to about 200 // m, preferably from about 80 " m to about 130 μm, more preferably from about 80/zm to about 100 μm, and most preferably from about 80 #m to about 90 μm. If the base film thickness is less than 10 μm, the adjustment of the cutting depth in the cutting process becomes unstable. If the base film thickness is more than 200 /z m, a lot of burrs may be generated in the cutting process, and the elongation ratio may be lowered to cause an expansion error. Further, in the case where a UV (ultraviolet light) curable pressure-sensitive adhesive is used for the pressure-sensitive adhesive portion, the base film preferably has superior UV transmittance. For example, the base film may have a UV transmittance of 70% or more, and preferably 90% or more. In the die attach film, the type of the pressure sensitive adhesive constituting the pressure sensitive adhesive portion is not substantially limited. For example, the pressure sensitive adhesive may comprise a typical UV curable pressure sensitive adhesive or a typical heat curable pressure sensitive adhesive. In the case of using a UV-curable pressure-sensitive adhesive, the intensity of the pressure-sensitive adhesive -9 - 201114874 can be lowered by irradiating UV from the side of the base film. In the case of using a heat-curable pressure-sensitive adhesive, the pressure-sensitive adhesive strength can be lowered by applying a suitable heat. In the present invention, a UV curable pressure-sensitive adhesive can be used in view of the take-out reliability. In this case, the pressure-sensitive adhesive portion may include a base resin, a UV curable compound, a photoinitiator, and a crosslinking agent. In the present invention, when the pressure-sensitive adhesive portion is said to include the above components, it can be explained that the pressure-sensitive adhesive portion is a dried, semi-cured portion containing a composition of the above components or a coating solution. Or a cured material exists. Examples of the base resin may include an acrylic resin. The acrylic resin may have a weight average molecular weight of from 1 Torr to 1,500,000, and more preferably from 200,000 to 1, 〇〇〇, 〇〇〇. If the weight average molecular weight is less than 100,000, the coatability or cohesive force may be lowered, and thus some residual material may remain on the adherend upon detachment or the pressure-sensitive adhesive may be decomposed. If the weight average molecular weight is more than 1,500,000, the base resin can hinder the reaction of the UV curable compound, and thus the strength of the pressure sensitive adhesive cannot be sufficiently lowered. For example, the acrylic resin may be a copolymer of a (meth) acrylate monomer and a monomer having a crosslinkable functional group. Here, examples of the (meth) acrylate monomer may include alkyl (meth) acrylate, and particularly, a monomer having an alkyl group having 1 to 12 carbon atoms, and examples thereof may include those selected from the following One or a combination of two or more: amyl (meth)acrylate, n-butyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, (methyl)-propyl- 10- 201114874 Diethyl hexanoic acid, n-octyl (methyl) propyl acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, dodecyl (meth) acrylate, And (meth) acrylate. In the case of a monomer having the alkyl group, the larger the number of carbon atoms of the alkyl group, the lower the glass transition temperature of the final copolymer. Therefore, the monomer can be suitably selected in accordance with the desired glass transition temperature and the like. Further, examples of the monomer having a crosslinkable functional group may include a combination selected from one or two or more of the following: a monomer having a hydroxyl group, a monomer having a carboxyl group, and a monomer having a nitrogen. Examples of the hydroxyl group-containing monomer may include, but are not limited to, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and the like. Examples of the carboxyl group-containing monomer may include, but are not limited to, (meth)acrylic acid, and the like. Examples of the nitrogen-containing monomer may include, but are not limited to, (meth)acrylonitrile, N-vinylpyrrolidone, N-vinylcaprolactam, and the like. The acrylic resin may additionally include a low molecular weight compound containing a carbon-carbon double bond such as vinyl acetate, styrene or (meth)acrylonitrile as a comonomer to improve other functions such as compatibility. The kind of the UV curable compound usable in the present invention is not substantially limited. For example, the UV curable compound can be a polyfunctional oligomer compound having a weight average molecular weight of from about 500 to about 300,000 (e.g., a multifunctional acrylate). It will be apparent to those skilled in the art that oligomers suitable for the intended use can be readily selected.
UV可固化之化合物含量相對於100重量份之基底樹 脂是5至400重量份，較佳是1〇至200重量份。若UV -11 - 201114874 可固化之化合物的量少於5重量份，則因爲壓敏性黏著劑 強度在固化後沒有充分地降低，故取出特性可能降低。若 UV可固化之化合物的量多於400重量份，則壓敏性黏著 劑之內聚力在UV光照射之前可能變得不足，或例如由離 型膜脫離可能變得困難。 光起始劑之種類也無實質上的限制，且因此可以使用 在此領域中已知之典型的光起始劑。光起始劑含量相對於 1〇〇重量份之UV可固化之化合物可以是〇.〇5至20重量 份。若光起始劑的量少於0.05重量份，則因爲藉由UV照 射所致之固化反應不足，故取出特性可能降低。若光起始 劑之量多於20重量份，則交聯反應可能在固化程序中於 短的單元中發生，未反應之UV可固化之化合物可能產生 而使殘留材料留在附著體上，或因壓敏性黏著力之過度降 低而可能降低取出特性。 另外，在該壓敏性黏著劑部份中所包括且賦予黏著力 及內聚力之交聯劑的種類也無實質上的限制。交聯劑可以 是典型的化合物，諸如異氰酸酯化合物、吖環丙烷化合物 、環氧化合物或金屬螯合物。交聯劑含量相對於1〇〇重量 份之基底樹脂可以是2至40重量份，且較佳是2至20重 量份。若交聯劑之量少於2重量份’則壓敏性黏著劑之內 聚力可能變得不足。若交聯劑之量多於4 0重量份’則因 UV光照射前膠黏強度不足’晶片可能被分散。 另外，本發明之壓敏性黏著劑部分可以合適地包括膠 黏劑，諸如松香、萜烯樹脂、酚樹脂、苯乙烯樹脂、脂族 -12- 201114874 石油樹脂、芳香族石油樹脂或脂族-芳族共聚物石油樹脂 〇 包括上述成分之壓敏性黏著劑部分的厚度無實質上的 限制，只要彼滿足上述厚度關係。例如，該壓敏性黏著劑 部分之厚度範圍可以在約10/zm至約40/zm之間，且較 佳約20/z m至約30;/ m之間。 在本發明中，在晶粒接附膜中所包括之黏著劑部分之 構成成分也無實質上的限制。然而，用於晶粒結合之黏著 劑部分較佳滿足半導體晶片及封裝中之其基材的翹曲及應 力鬆弛等二特性。詳言之，半導體晶片典型具有約4 ppm/ °C之熱膨脹係數（CTE)，且半導體基材典型具有約10 ppm/°C至約1 5 ppm/°C之CTE。因CTE之間的差異，在程 序中可能發生諸如翹曲或龜裂之失敗。因此，在本發明中 所用之黏著劑部分較佳經配置以在高溫下具有優越之應力 鬆弛性，同時防止產物之翹曲且顯現出優越物理性質，例 如優越之黏著力、耐熱性及類似者。 在本發明中，只要黏著劑部分滿足上述特性，則其成 分無實質上的限制。例如，黏著劑部分可以包括一種黏著 劑’其中二或更多種之具有彼此不同之彈性的樹脂被混合 以致軟片段及硬片段共存於其中。藉此，該黏著劑部分可 以具有能防止翹曲（此係由半導體晶片及其基材之間CTE 之差異所引起）之應力鬆弛特性，以及優越物理特性，包 括優越之黏著強度、耐熱性及類似者。 例如，該黏著劑部分可以包括環氧樹脂、具有低彈性 -13- 201114874 之高分子量樹脂及硬化劑。在本文中，當該黏著劑 稱是包括這些成分時，可以解釋爲該黏著劑部分以 成分之組成物或塗覆用溶液之經乾燥的、半固化的 的材料形式存在。 可用於本發明中之環氧樹脂可以包括此領域中 典型之用於黏著劑的環氧樹脂。例如，此環氧樹脂 二或更多個環氧基團於分子中且具有3 00至2,000 平均分子量。此環氧樹脂可以經由固化程序形成硬 構’且因此顯現出優越黏著強度、耐熱性及機械力 別地，在本發明中所用之環氧樹脂較佳具有1 8 0至 之平均環氧當量。若環氧樹脂之平均環氧當量少於 則晶粒接附膜整體因過高之交聯密度可能顯現出硬 若環氧樹脂之平均環氧當量多於1，〇〇〇，則耐熱性 低。 此環氧樹脂之實例可以包括但不限於選自以下 二或更多者：雙官能之環氧樹脂，諸如雙酚A環氧 雙酣F環氧樹脂；及具有三或更多官能基團之多官 樹脂’諸如甲酚酚醛清漆環氧樹脂、酚酚醛清漆環 、四官能環氧樹脂；聯苯型環氧樹脂；三酚甲烷環 、經烷基改質之三酚甲烷環氧樹脂、萘環氧樹脂、 二稀環氧樹脂'及經二環戊二烯改質之酚環氧樹脂 特別地’較佳使用雙官能環氧樹脂與多官能環 混合之混合樹脂以作爲本發明中之環氧樹脂。如本 用之“多官能環氧樹脂”一詞係指具有三或更多官 部分據 含該等 或固化 已知之 可含有 之重量 交聯結 。更特 1,000 180， 特性。 可能降 之一或 樹脂及 能環氧 氧樹脂 氧樹脂 二環戊 〇 氧樹脂 文中所 能基團 -14 - 201114874 之環氧樹脂。通常，雙官能環氧樹脂具有優越可撓性、在 高溫下之流動性及類似者，但具有不良的耐熱性及固化速 度。相對地，具有三或更多官能基團之多官能環氧樹脂具 有快速的固化速度，且因高的交聯密度而顯出優越耐熱性 ，但可撓性及流動性不良。因此’當合適地混合且使用二 種類之樹脂時，可能控制該黏著劑部分之彈性模數及膠黏 性，且在切割程序中抑制晶片分散或毛邊發生。 當使用混合之樹脂時，雙官能環氧樹脂含量相對於 100重量份之多官能環氧樹脂，較佳可以是10至50重量 份。若雙官能環氧樹脂之量少於1 〇重量份，則黏著強度 在高溫下可因低的膠黏性而降低。若雙官能環氧樹脂之量 多於5 0重量份，則處置特性可能降低或在切割程序中毛 邊發生可能增加。 另外在該黏著劑部分中，環氧樹脂含量相對於100重 量份之具有低彈性的高分子量樹脂可以是10至200重量 份，較佳是20至100重量份。若環氧樹脂之量少於10重 量份，則可能;降低耐熱性及處置特性。若環氧樹脂之量多 於200重量份，則可能降低加工性及可靠性。 具有低彈性之高分子量樹脂可以形成軟片段於黏著劑 內，以在高溫下提供應力鬆弛特性。在此，可以使用任何 樹脂以作爲該高分子量樹脂，只要彼與環氧樹脂摻合，在 膜形成時不引起破裂，在交聯結構形成後顯現出黏彈性， 且具有與其他成分之優越相容性及優越儲存安定性。The content of the UV curable compound is 5 to 400 parts by weight, preferably 1 to 200 parts by weight, per 100 parts by weight of the base resin. If the amount of the UV -11 - 201114874 curable compound is less than 5 parts by weight, since the pressure-sensitive adhesive strength is not sufficiently lowered after curing, the take-out characteristics may be lowered. If the amount of the UV curable compound is more than 400 parts by weight, the cohesive force of the pressure-sensitive adhesive may become insufficient before irradiation of UV light, or may become difficult, for example, by detachment from the release film. The kind of photoinitiator is also not substantially limited, and thus a typical photoinitiator known in the art can be used. The photoinitiator content may be from 5 to 20 parts by weight based on 1 part by weight of the UV curable compound. If the amount of the photoinitiator is less than 0.05 part by weight, since the curing reaction by UV irradiation is insufficient, the take-out characteristics may be lowered. If the amount of the photoinitiator is more than 20 parts by weight, the crosslinking reaction may occur in a short unit in the curing process, and an unreacted UV curable compound may be generated to leave the residual material on the attachment, or The extraction characteristics may be lowered due to an excessive decrease in pressure-sensitive adhesive force. Further, the type of the crosslinking agent included in the pressure-sensitive adhesive portion and imparting adhesive force and cohesive force is not substantially limited. The crosslinking agent may be a typical compound such as an isocyanate compound, an anthracene cyclopropane compound, an epoxy compound or a metal chelate compound. The content of the crosslinking agent may be 2 to 40 parts by weight, and preferably 2 to 20 parts by weight, based on 1 part by weight of the base resin. If the amount of the crosslinking agent is less than 2 parts by weight, the cohesive force of the pressure-sensitive adhesive may become insufficient. If the amount of the crosslinking agent is more than 40 parts by weight 'the adhesive strength is insufficient due to the UV light irradiation, the wafer may be dispersed. Further, the pressure-sensitive adhesive portion of the present invention may suitably include an adhesive such as rosin, terpene resin, phenol resin, styrene resin, aliphatic -12-201114874 petroleum resin, aromatic petroleum resin or aliphatic- The thickness of the aromatic copolymer petroleum resin 〇 including the pressure-sensitive adhesive portion of the above components is not substantially limited as long as it satisfies the above thickness relationship. For example, the thickness of the pressure sensitive adhesive portion can range from about 10/zm to about 40/zm, and more preferably from about 20/zm to about 30;/m. In the present invention, the constituent components of the adhesive portion included in the die attach film are also not substantially limited. However, the adhesive portion for grain bonding preferably satisfies the characteristics of warpage and stress relaxation of the substrate in the semiconductor wafer and package. In particular, semiconductor wafers typically have a coefficient of thermal expansion (CTE) of about 4 ppm/°C, and semiconductor substrates typically have a CTE of from about 10 ppm/°C to about 15 ppm/°C. Failures such as warpage or cracking may occur in the program due to differences between CTEs. Accordingly, the adhesive portion used in the present invention is preferably configured to have superior stress relaxation at high temperatures while preventing warpage of the product and exhibiting superior physical properties such as superior adhesion, heat resistance and the like. . In the present invention, as long as the adhesive portion satisfies the above characteristics, the composition thereof is not substantially limited. For example, the adhesive portion may include an adhesive agent in which two or more resins having different elasticity from each other are mixed so that the soft segment and the hard segment coexist therein. Thereby, the adhesive portion can have stress relaxation characteristics capable of preventing warpage (this is caused by a difference in CTE between the semiconductor wafer and its substrate), and superior physical properties including superior adhesion strength, heat resistance, and Similar. For example, the adhesive portion may include an epoxy resin, a high molecular weight resin having a low elasticity of -13 to 201114874, and a hardener. Herein, when the adhesive is said to include these components, it can be explained that the adhesive portion is present as a composition of the component or a dried, semi-cured material of the coating solution. The epoxy resin which can be used in the present invention may include an epoxy resin which is typically used in the art for an adhesive. For example, the epoxy resin has two or more epoxy groups in the molecule and has an average molecular weight of from 300 to 2,000. The epoxy resin can be formed into a rigid structure through a curing process and thus exhibits superior adhesion strength, heat resistance and mechanical strength, and the epoxy resin used in the present invention preferably has an average epoxy equivalent of from 180 to 280. If the average epoxy equivalent of the epoxy resin is less than the entire crosslinked density of the die attach film may appear to be hard, if the average epoxy equivalent of the epoxy resin is more than 1, 〇〇〇, then heat resistance low. Examples of the epoxy resin may include, but are not limited to, two or more selected from the group consisting of a difunctional epoxy resin such as bisphenol A epoxy biguanide F epoxy resin; and having three or more functional groups. Multi-functional resin such as cresol novolac epoxy resin, phenol novolac ring, tetrafunctional epoxy resin; biphenyl type epoxy resin; trisphenol methane ring, alkyl modified trisphenol methane epoxy resin, naphthalene Epoxy resin, di-epoxy resin' and phenol epoxy resin modified by dicyclopentadiene, in particular, a mixed resin of a bifunctional epoxy resin and a polyfunctional ring is preferably used as a ring in the present invention. Oxygen resin. The term "multifunctional epoxy resin" as used herein refers to a cross-linking junction having three or more official parts which may be contained in such a known or cured form. More special 1,000 180, features. Possible drop of one or resin and epoxy resin oxy resin dicyclopentanyloxy resin The epoxy resin of the group -14 - 201114874. Generally, difunctional epoxy resins have superior flexibility, fluidity at high temperatures, and the like, but have poor heat resistance and curing speed. In contrast, a polyfunctional epoxy resin having three or more functional groups has a rapid curing speed and exhibits excellent heat resistance due to a high crosslinking density, but has poor flexibility and fluidity. Therefore, when two kinds of resins are suitably mixed and used, it is possible to control the elastic modulus and adhesiveness of the adhesive portion, and to suppress wafer dispersion or burrs in the cutting process. When a mixed resin is used, the difunctional epoxy resin content may preferably be 10 to 50 parts by weight based on 100 parts by weight of the polyfunctional epoxy resin. If the amount of the bifunctional epoxy resin is less than 1 part by weight, the adhesion strength may be lowered at a high temperature due to low adhesiveness. If the amount of the bifunctional epoxy resin is more than 50 parts by weight, the handling characteristics may be lowered or the occurrence of burrs may increase during the cutting process. Further, in the adhesive portion, the epoxy resin content may be 10 to 200 parts by weight, preferably 20 to 100 parts by weight, per 100 parts by weight of the high molecular weight resin having low elasticity. If the amount of the epoxy resin is less than 10 parts by weight, it is possible to lower the heat resistance and handling characteristics. If the amount of the epoxy resin is more than 200 parts by weight, workability and reliability may be lowered. The high molecular weight resin having low elasticity can form a soft segment in the adhesive to provide stress relaxation characteristics at high temperatures. Here, any resin may be used as the high molecular weight resin as long as it is blended with the epoxy resin, does not cause cracking at the time of film formation, exhibits viscoelasticity after formation of the crosslinked structure, and has superior phase with other components. Capacitive and superior storage stability.
例如，該高分子量樹脂可以是玻璃轉換溫度爲-2 0 °C -15- 201114874 至40°C，且較佳是-l〇°C至30°C的樹脂。若該高分子量樹 脂之玻璃轉換溫度是低於-20 °C，則因過高之流動性，處 置特性可能變差。若高分子量樹脂之玻璃轉換溫度高於40 °C，則在低溫下與晶圓相關之黏著強度可能降低，且因此 晶片在切割程序中可能被分散，或冷卻用水可能滲透於晶 片之間。 另外，該高分子量樹脂可以具有1 00,000至1，000,000 ，及較佳地200,000至900,000之重量平均分子量。若該 高分子量樹脂之重量平均分子量少於1 〇〇,〇〇〇，則可能降 低處置特性及耐熱性，且因此當塡充電路時流動性之控制 可能變困難。若高分子量樹脂之重量平均分子量多於 1，000,000時，則因彈性模數過度增加，電路塡充性及可 靠性可能被降低。 具有低彈性之高分子量樹脂的詳細種類無實質上的限 制，只要彼滿足上述特性。例如，該高分子量樹脂可以包 括但不限於選自以下之一者或二或更多者之組合：聚醯亞 胺、聚醚醯亞胺、聚酯醯亞胺、聚醯胺、聚醚颯、聚醚酮 、聚烯烴、聚氯乙烯、苯氧樹脂、反應性丙烯腈丁二烯橡 膠及丙烯酸系樹脂。 在此，丙烯酸系樹脂之具體實例可以是包括（甲基） 丙烯酸及其衍生物作爲共聚單體之丙烯酸系共聚物。在此 1 (甲基）丙烯酸及其衍生物之實例可以包括（甲基）丙 烯酸；含有具有1至12個碳原子之烷基的（甲基）丙烯 酸烷酯，諸如（甲基）丙烯酸甲酯或（甲基）丙烯酸乙酯 -16- 201114874 ;(甲基）丙烯腈或（甲基）丙烯醯胺；及其他可共聚合 之單體。 丙烯酸系樹脂也可以包括一或二或更多種官能基團， 諸如縮水甘油基、羥基、羧基及胺基。可以藉由將單體（ 諸如（甲基）丙烯酸縮水甘油酯、（甲基）丙烯酸羥酯、 (甲基）丙烯酸羥乙酯或（甲基）丙烯酸羧酯）共聚合， 可將此官能基團導入。 當丙烯酸系樹脂含有官能基團時，官能基團之較佳含 量相對於丙烯酸系樹脂總重量可以是0.5至10重量份。 若官能基團之量少於0.5重量份，則難以確保黏著強度。 若官能基團之量多於1 0重量份，則加工性可能降低或凝 膠化可能發生。 可包括於本發明該黏著劑部分的硬化劑並無實質上的 限制，只要彼可與該環氧樹脂及/或該具有低彈性之高分 子量樹脂反應以形成交聯結構即可。在此，例如，硬化劑 可以是可與此二成分同時反應以形成交聯結構者。此硬化 劑可以在黏著劑中形成分別具有軟片段及硬片段之交聯結 構，藉此改良耐熱性。同時，硬化劑可在二片段之介面上 作爲二片段之交聯劑以改良半導體封裝之可靠性。 在此，例如，硬化劑可以是含有二或更多個羥基於一 分子中且具有在100至1,000範圍內之羥基値的酚樹脂。 若羥基値少於1 00，黏著劑部分之應力鬆弛特性可被降低 。若羥基値多於1，000，則因交聯密度減少而使耐熱性變 差。 -17- 201114874 另外，酚樹脂較佳具有50°C至150°C之軟化點 樹脂之軟化點低於50°C，則處置特性可被降低。若 之軟化點高於1 5(TC，則黏著劑部分及晶圓之間的 度可被降低。 酚樹脂之實例可以包括但不限於選自雙酚A樹 酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清 、酚芳烷基樹脂、多官能酚醛清漆樹脂 '二環戊二 醛清漆樹脂、胺基三嗪酚酚醛清漆樹脂、聚丁二烯 清漆樹脂及聯苯型樹脂之一或二或更多者。 在本發明之黏著劑部分中，硬化劑含量相對於 量份之環氧樹脂可以是30至1 00重量份，且較佳| 90重量份。若硬化劑之量少於30重量份，則在固 中未反應之環氧樹脂之量可以增加，且因此耐熱性 或需要高溫或長時間之程序以固化未反應之環氧樹 硬化劑之量多於1 00重量份，則因未反應之羥基可 吸收性、儲存安定性、及介電特性變差。 另外，本發明之黏著劑部分可以另外包括固化 以使固化反應加速。固化加速劑可以包括選自咪唑 、三苯基基膦類（TPP )或三級胺化合物之一或二 者，較佳是咪唑化合物。 咪唑化合物之實例可以包括但不限於選自2 -甲 (2MZ ) 、2-乙基-4-甲基咪唑（2E4MZ ) 、2-苯基 2PZ ) 、1-氰乙基-2-苯基咪唑（2PZ-CN ) 、2-十一 唑（C11Z) 、2-十七烷基咪唑（C17Z)、及1-氰 。若酚 酚樹脂 黏著強 脂、酚 漆樹脂 烯酚酚 酚酚醛 100重 ^ 5〇至 化程序 降低， 脂。若 使水分 加速劑 化合物 或更多 基咪唑 咪唑（ 烷基咪 乙基-2- -18- 201114874 苯基咪唑苯偏三酸酯（2PZ-CNS)之一或二或更多者。 固化加速劑含量相對於1 〇〇重量份環氧樹脂可以是 0.1至1 0重量份，較佳是〇. 2至5重量份。若固化加速劑 之量少於0.1重量份，則耐熱性或黏著力可被降低。若固 化加速劑之量多於1 〇重量份’則固化反應發生地太突然 ，且因此儲存安定性被降低。 另外，黏著劑部分可以另外地包括無機塡料（鑒於處 理特性）、耐熱性及熔化黏度。無機塡料之實例可以包括 但不限於選自以下之一或二或更多者：矽石、氫氧化鋁、 碳酸鈣、氫氧化鎂、氧化鋁、滑石及氮化鋁。 無機塡料可以具有〇.〇〇l#m至ΙΟ/zm，及較佳地 0.005/zm至l"m之平均粒子直徑。若無機塡料之粒子直 徑小於〇 · 〇 〇 1 # m，則塡料在黏著劑部分中附聚，或外觀可 能令人不滿意。若無機塡料之粒子直徑大於10//m，則當 進行熱壓製時塡料可以突出黏著劑部分表面且晶片可被破 壞，或黏著劑性質之加強效果可被降低。 無機塡料含量相對於100重量份之在黏著劑中的全部 樹脂可以是0.5至100重量份，及較佳是5至50重量份 。若無機塡料之量少於0.5重量份，則因無機塡料之添加 所得之耐熱性及處置特性的改良效果可能不足。若無機塡 料之量多於1 〇〇重量份，則與基材相關之加工性及黏著強 度可被降低。 另外’本發明之黏著劑部分可另外地包括偶合劑。藉 此，可能改良樹脂成分及晶圓或塡料之間之密合黏著性， -19 - 201114874 或防水及防熱特性。偶合劑之實例可以包括但不限於選自 矽院偶合劑、氧化鈦偶合劑及鋁偶合劑之一或二或更多者 〇 偶合劑含量相對於100重量份之樹脂成分可以是0.05 至1 5重量份，且較佳是0.1至1 〇重量份。若偶合劑之量 少於〇.〇5重量份，則密合黏著性之改良可能不足。若偶 合劑之量多於1 5重量份，則可產生孔隙或可降低耐熱性 〇 在此，包括上述成分之黏著劑部分在13 0°c下可以具 有範圍在50 gf至150 gf之間的膠黏力，及在150°C下具 有4.0MPa或更多之切變強度。 當黏著劑部分滿足以上物性時，優點是在於：可以在 沒有預先固化程序（此典型係在晶粒接附程序之後進行） 之狀況下，進行金屬線結合及模製程序。以此方式，當黏 著劑部分符合這些條件時，可能防止晶片在隨後之程序中 脫離、移動或偏離，卻在半導體封裝程序無預先固化程序 。因此，可能改良膜之包埋性，減少不合格諸如晶圓之翹 曲，及增加生產力。 若黏著劑部分之膠黏力少於5 0 gf，則在晶粒結合程 序中可能發生晶片之脫離、移動或偏離。若黏著劑部分之 膠黏力多於1 50 gf，則在該程序中產生很多毛邊，或可以 降低處置特性或耐熱性。另外，若黏著劑部分之切變強度 少於4.0 ’則在半導體程序中可以發生晶片之移動，且因 此可以降低半導體封裝之可靠性。 -20- 201114874 測量膠黏力及切變強度之方法在本發明中無實 限制，且因此可以是在此領域中所進行之典型方法 ’例如經由使用組織分析儀及球型探針的方法，可 膠黏力。使用在此領域中典型之測量裝置（諸如球 接線拉動測試機，DAGE 4000系列），也可以測量 度。 如上述之黏著劑部分的厚度在本發明中無實質 制，只要黏著劑部分滿足上述關係。例如，黏著劑 厚度範圍可以在l//m至200"m之間，較佳地15 1 0 0以m之間，更佳地2 0 // m至1 0 0 β m之間，但 20#m至70//m之間，且最佳地20//m至60//m 若黏著劑部分之厚度少於1 /z m，則在高溫下之應 特性及包埋性可被降低。若黏著劑部分之厚度多於 ，則經濟效率降低。 另外，本發明之晶粒接附膜可以另外地包括形 著劑部分上之離型膜。 離型膜之實例可以包括但不限於選自聚對苯二 二酯膜、聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚 、聚丁二烯膜、氯乙烯共聚物膜及聚醯亞胺膜之一 更多者。 此離型膜之表面可以進行一種使用選自以醇酸 聚矽氧、氟、不飽和酯、聚烯烴及蠟爲底質之離型 或二或更多者的離型處理。其中，具有高耐熱性之 樹脂、聚矽氧或氟爲底質的離型劑是特佳的。 質上的 。在此 以測量 切變/ 切變強 上的限 部分之 // m至 更佳地 之間。 力鬆弛 2 0 0 " m 成在黏 甲酸乙 丁烯膜 或二或 樹脂、 劑之一 以醇酸 -21 - 201114874 離型膜典型地可以形成約lOym至約500 # m，且較 佳地約20//m至200//m的厚度。若離型膜之厚度少於10 // m，則離型膜在塗覆之後可能在固化程序中過度地伸長 。若離型膜之厚度多於500ym，則經濟效率降低。 製造晶粒接附膜之方法不特別限定。例如，可以使用 連續形成壓敏性黏著劑部分、黏著劑部分、及離型膜在基 底膜上的方法；或分開地形成壓敏性黏著劑部分及黏著劑 部分、而後將彼互相層合之方法。 在此方法中，形成黏著劑部分之方法無實質上的限制 。例如，可以經由包括以下步驟之方法形成黏著劑部分： 溶解或分散構成黏著劑之每一成分於溶劑中以製備樹脂清 漆的第一步驟；施加樹脂清漆至基底膜或離型膜的第二步 驟；及將覆蓋樹脂清漆之基底膜或離型膜加熱以除去溶劑 之第三步驟。 在第一步驟中，使用構成黏著劑部分之成分製造樹脂 清漆。在此，溶劑典型可以使用選自甲基乙基酮（MEK ) 、丙酮、甲苯、二甲基甲醯胺（DMF)、甲基纖維素（ MCS)、四氫呋喃（THF) 、：N -甲基吡咯烷酮（NMP)及 乙酸乙酯之一者或二或更多者之混合物。在此，在考慮基 底膜之耐熱性時，可以使用低沸點溶劑，或可以使用高沸 點溶劑以改良塗覆性。 在第一步驟中，也可以使用塡料以減少處理時間且改 良分散性。在此情況中，第一步驟可以包括（1 )混合溶 劑、塡料及偶合劑，（2 )將環氧樹脂及硬化劑添加且混 -22- 201114874 合至步驟（1 )之混合物，及（3 )混合具有低彈性之高分 子量樹脂及固化加速劑與步驟（2 )之混合物。 在此’可得之塡料的實例可以包括選自球磨機、珠粒 磨機、三滾筒及高速分散機之一者或二或更多者之組合。 球或珠粒之材料可以包括玻璃、氧化鋁或氧化锆。特別地 ’在粒子分散性方面’二氧化鍩製之球或珠粒是較佳的。 在形成黏著劑部分之第二步驟中，將所製備之樹脂清 漆施加至基底膜或離型膜。施加方法無實質上的限制。例 如’可以使用刀式塗覆、滾筒塗覆、噴灑塗覆、凹版印刷 塗覆、簾式塗覆、間歇式塗覆、或唇式塗覆。 在形成黏著劑部分之第三步驟中，將塗覆樹脂清漆之 基底膜或離型膜加熱以除去溶劑。第三步驟較佳可以在70 艽至250 °C之溫度下進行5分鐘至20分鐘，但不限於這些 條件。 另外’形成壓敏性黏著劑部分之方法在本發明中無實 質上的限制。例如，壓敏性黏著劑部分係藉以下方式形成 :溶解或分散諸如丙烯酸系樹脂、交聯劑、UV可固化之 化合物及光起始劑之成分於溶劑中以製備樹脂清漆，且施 加並乾燥所製備之樹脂清漆至基底膜（或離型膜）。 層合黏著劑部分及壓敏性黏著劑部分之方法無實質上 的限制。例如’層合方法可以是熱滾壓層合方法或層合加 壓方法。在連續程序之可能性及效率方面，熱滾壓層合方 法是較佳的。熱滾壓層合方法可以在0.1 Kgf/cm2至10 Kgf/cm2之壓力及i〇°C至10〇t之溫度下進行。 -23- 201114874 本發明也關於一種包括晶粒接附膜之半導體晶圓，其 中晶粒接附膜之黏著劑部分接附至晶圓之一個表面，且晶 粒接附膜之基底膜或壓敏性黏著劑部分固定至晶圓之環框 0 藉由在l〇°C至〗80°c溫度下將晶粒接附膜之黏著劑部 分接附（層合）至半導體晶圓背面，且將基底膜或壓敏性 黏著劑部分固定至晶圓之環框，可以製造半導體晶圓。 本發明也關於一種半導體封裝方法，其包括切割本發 明之半導體晶圓的第一步驟及取出經由第一步驟所製造之 半導體晶片的第二步驟。 在以上步驟之後，半導體封裝方法可以另外包括將取 出之半導體晶片結合至半導體基材的第三步驟，及金屬線 結合半導體晶片及半導體基材之第四步驟，及使用包封材 料模製半導體晶片之第五步驟。 本發明之半導體封裝方法將詳述於下。在半導體封裝 方法中，使用切割裝置，將接附有上述晶粒接附膜之半導 體晶圓切成分開的晶片。在此之後，經由用於施加UV光 或熱之手段將壓敏性黏著劑部分固化。在黏著劑部分及壓 敏性黏著劑部分之間的黏著強度在固化程序中減低，以致 晶片容易在隨後程序中取出。在此情況中，若需要，進行 擴展晶粒接附膜之擴展方法，藉此，可以容易地藉由擴展 晶片之間的間隔且在黏著劑部分及壓敏性黏著劑部分之間 的介面上產生位移而進行取出步驟。 當晶片在以上狀態中經取出時，半導體晶圓及黏著劑 -24- 201114874 部分由壓敏性黏著劑部分剝離’以致可獲得僅接附有黏著 劑層之晶片。所得之接附有黏著劑層的晶片經接附至半導 體基材。典型地，在以下條件將晶片接附：1 0 0 °C至1 8 0 °c 之溫度，0.5秒至3秒之時間’及0.5 kgf/cm2至2 kgf/cm2 之壓力。 在進行此程序之後，進行金屬線結合程序及模製程序 ，以致獲得半導體裝置。當依本發明使用具有如上述之膠 黏力及切變強度的黏著劑部分時，則即使在晶粒結合程序 後不進行預先固化程序，也可以在金屬線結合或模製程序 中抑制晶片之脫離、移動或偏離》 半導體裝置之製造方法不限於這些程序，且因此可以 另外包括任意的程序或可以改變程序的順序。例如，可以 用UV固化、切割及擴展程序之順序或用切割、擴展及 U V固化程序之順序，進行此方法。在晶片接附程序之後 ，另外可以進行加熱或冷卻程序。 在下文中，本發明將經由以下實例及比較用實例更詳 細描述。然而，本發明之範圍不限於以下實例。 製備實例1:具有低彈性之高分子量樹脂的製備 100重量份之丙烯酸丁酯、100重量份之丙烯酸乙酯 、70重量份之丙烯腈、8重量份之甲基丙烯酸縮水甘油酯 、4重量份之丙烯酸 '及750重量份之去離子的蒸餾水倒 入具有攪拌器、氮氣取代裝置及溫度計之四開口的3升反 應器中。然後，添加2重量份之懸浮劑（用水稀釋成4% -25- 201114874 之聚乙烯醇（商標：NH-17，由Nippon Ghosei)) 重量份之分子量調節劑（十二烷基硫醇），以製備 。所製備之混合物進行氮取代程序約1小時，然後 5 5 °C。當溫度到達預定溫度時，添加2重量份之用 酯稀釋成2重量％濃度之二乙基己基過氧二碳酸醋 :Trigonox EHP，由 Akzo Nobel 製造）以作爲起 使聚合反應開始。在聚合反應開始後4小時之時， 反應結束。然後，反應產物用去離子之蒸餾水洗數 使用離心分離機及真空爐乾燥。藉此，獲得聚合物 珠粒之產率是90%，藉由使用凝膠滲透層析法所測 粒的重量平均分子量是750,000，珠粒之分子量分才 ，且珠粒之玻璃轉換溫度（Tg )是10 °C。所製備 物珠粒充分地溶解在甲基乙基酮中1日，然後乾燥 實例1 切割用膜（壓敏性黏著劑膜）之製備 藉由以下方式製備UV (紫外光）可固化之壓 著劑組成物：相對於1 00重量份之多官能寡聚物， 重量份之作爲光起始劑之Darocur TPO與一種包括 量份丙烯酸系共聚物（其係藉由共聚合丙烯酸2-乙 及甲基丙烯酸甲酯而製備且具有800,000之重量平 量及10°c之玻璃轉換溫度），5重量份異氰酸酯硬 10重量份之具有20,000重量平均分子量之多官食g 的混合物。然後，將該UV可固化之壓敏性組成物 及0.3 混合物 加熱至 乙酸乙 (商標 始劑以 使聚合 次，且 珠粒。 得之珠 ί 是 4.0 之聚合 敏性黏 混合Ί 1 00重 基己酯 均分子 化劑及 寡聚物 塗覆在 -26- 201114874 已進行離型處理且具有38;zm厚度的聚酯膜上，以在乾燥 後獲得20〆m之厚度，且在110 °C下乾燥3分鐘。然後， 經乾燥之壓敏性黏著劑層經層合在具有9 0 // m厚度之作爲 基底膜的聚烯烴膜上。藉此製備用於切割之壓敏性黏著劑 膜。 晶粒接附膜之製備 在甲基乙基酮（MEK )中混合及攪動 75重量份之 YDCN-500-1 P (甲酚酚醛清漆環氧樹脂，由 KUKDO Chem. Co.，Ltd.，製造，環氧當量=200，軟化點=52°C )， 25重量份之YD-128(雙酚A環氧樹脂，由KUKDO Chem. Co. Ltd製造，環氧當量=187) ，60重量份之KPH-F2001 (酚酚醛清漆樹脂，由 Kolon Chem. Co·, Ltd.,羥基値 =1 〇 6，軟化點=8 8 °C ) ，2 0 0重量份之在製備實例1所製 備之高分子量樹脂，0.5重量份之2 -苯基咪唑（2PZ，由 SHIKOKU Chemical Co.製造），2重量份之矽烷偶合劑（ KBM-403，由 Shinetsu Chemical Co. Ltd.製造，7 -縮水甘 油氧基丙基三甲氧基矽烷），及30重量份之矽石塡料（ UFP-30，由 Denka Kagaku Kogyo Co. Ltd 製造，平均粒子 直徑=1 5 0 nm )，以製備樹脂清漆。所製備之樹脂清漆經 塗覆在具有38ym厚度之基底膜上（RS-21G，聚矽氧之 PET離型膜，由SKC製造），且在110°C下乾燥5分鐘。 藉此製備用於晶粒結合之具有20 /z m厚度之黏著劑層。使 用熱滾壓層合機，在40°C及5 kgf/cm2之條件下，將所製 -27- 201114874 備之黏著劑層層合在包括UV可固化之壓敏性黏著劑層的 壓敏性黏著劑膜上。藉此製備晶粒接附膜。 實例2 藉由如實例1中之相同方法製備晶粒接附膜，除了藉 由控制壓敏性黏著劑膜以具有30//m厚度且使用具有80 # m厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。 實例3 藉由如實例2中之相同方法製備晶粒接附膜，除了用 於晶粒結合之黏著劑層厚度被控制成60 y m。 實例4 藉由如實例2中之相同方法製備晶粒接附膜，除了用 於晶粒結合之黏著劑層厚度被控制成1 0 // m。 比較用實例1 藉由如實例1中之相同方法製備晶粒接附膜，除了藉 由控制壓敏性黏著劑膜以具有1 0 // m厚度且使用具有1 00 //m厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。 比較用實例2 藉由如實例1中之相同方法製備晶粒接附膜，除了藉 由控制壓敏性黏著劑膜以具有40 # m厚度且使用具有70 -28- 201114874 # m厚度之聚烯烴膜以製備壓敏性黏著劑膜之外。 比較用實例3 藉由如比較用實例2中之相同方法製備晶粒接附膜， 除了藉由用於晶粒結合之黏著劑膜的厚度被控制成5/Czm 之外。 實例及比較用實例所製備之膜的各層之間厚度的關係 安排於以下表1中。 表1 實例 比較用, 刚 1 2 3 4 1 2 3 基底膜 (A)㈣ 90 80 80 80 100 70 70 壓敏性 黏著劑層 (B)㈣ 20 30 30 30 10 40 40 黏著劑層 (C)㈣ 20 20 60 10 20 20 5 B/A 0.222 0.375 0.375 0.375 0.1 0.571 0.571 B/C 1 1.5 0.5 3 0.5 2 8 關於如上述之晶粒接附膜，藉由以下方法測量其物性 ，且結果安排於以下表2中。 1.毛邊抑制特性 在5 0°c下，使用安裝器，將晶粒接附膜層合在100 // m 之晶圓及晶圓環框上。然後，使用切割裝置（DAD-64〇 ’ -29 - 201114874 mm/sec 割晶圓 由 Disco Co. Ltd 製造），在 rpm = 40 tC，速度=50 ，晶片尺寸=5 mmx5 mm，及總數=100之條件下母 。其次，測量在晶片上所產生之毛邊。 2. 擴展性For example, the high molecular weight resin may be a resin having a glass transition temperature of -2 0 ° C -15 to 201114874 to 40 ° C, and preferably -10 ° C to 30 ° C. If the glass transition temperature of the high molecular weight resin is lower than -20 °C, the handling characteristics may be deteriorated due to excessive fluidity. If the glass transition temperature of the high molecular weight resin is higher than 40 °C, the adhesion strength associated with the wafer at low temperatures may be lowered, and thus the wafer may be dispersed during the cutting process, or the cooling water may penetrate between the wafers. Further, the high molecular weight resin may have a weight average molecular weight of from 1,00,000 to 1,000,000, and preferably from 200,000 to 900,000. If the weight average molecular weight of the high molecular weight resin is less than 1 Torr, the treatment property and heat resistance may be lowered, and thus the control of fluidity may become difficult when the charge path is removed. If the weight average molecular weight of the high molecular weight resin is more than 1,000,000, the circuit chargeability and reliability may be lowered due to an excessive increase in the modulus of elasticity. The detailed type of the high molecular weight resin having low elasticity is not substantially limited as long as it satisfies the above characteristics. For example, the high molecular weight resin may include, but is not limited to, one or a combination of two or more selected from the group consisting of polyimine, polyetherimide, polyesterimide, polyamine, polyether oxime , polyether ketone, polyolefin, polyvinyl chloride, phenoxy resin, reactive acrylonitrile butadiene rubber and acrylic resin. Here, a specific example of the acrylic resin may be an acrylic copolymer including (meth)acrylic acid and a derivative thereof as a comonomer. Examples of the 1 (meth)acrylic acid and derivatives thereof may include (meth)acrylic acid; alkyl (meth)acrylates having an alkyl group having 1 to 12 carbon atoms, such as methyl (meth)acrylate Or ethyl (meth)acrylate-16- 201114874; (meth)acrylonitrile or (meth)acrylamide; and other copolymerizable monomers. The acrylic resin may also include one or two or more functional groups such as a glycidyl group, a hydroxyl group, a carboxyl group, and an amine group. The functional group can be obtained by copolymerizing a monomer such as glycidyl (meth) acrylate, hydroxy (meth) acrylate, hydroxyethyl (meth) acrylate or carboxy (meth) acrylate. Group import. When the acrylic resin contains a functional group, the preferred content of the functional group may be from 0.5 to 10 parts by weight based on the total weight of the acrylic resin. If the amount of the functional group is less than 0.5 part by weight, it is difficult to ensure the adhesion strength. If the amount of the functional group is more than 10 parts by weight, workability may be lowered or gelation may occur. The hardener which may be included in the adhesive portion of the present invention is not substantially limited as long as it can react with the epoxy resin and/or the high molecular weight resin having low elasticity to form a crosslinked structure. Here, for example, the hardener may be one which can react with the two components at the same time to form a crosslinked structure. This hardener can form a crosslinked structure having a soft segment and a hard segment, respectively, in the adhesive, thereby improving heat resistance. At the same time, the hardener can act as a cross-linker for the two segments at the interface of the two segments to improve the reliability of the semiconductor package. Here, for example, the hardener may be a phenol resin containing two or more hydroxyl groups in one molecule and having a hydroxyindole in the range of 100 to 1,000. If the hydroxy group is less than 100, the stress relaxation characteristics of the adhesive portion can be lowered. If the hydroxy group is more than 1,000, the heat resistance is deteriorated due to a decrease in the crosslinking density. -17- 201114874 Further, the phenol resin preferably has a softening point of 50 ° C to 150 ° C. When the softening point of the resin is lower than 50 ° C, the handling characteristics can be lowered. If the softening point is higher than 15 (TC), the degree between the adhesive portion and the wafer can be lowered. Examples of the phenol resin may include, but are not limited to, a bisphenol A resin novolak resin, a cresol novolak resin , bisphenol A novolac, phenol aralkyl resin, polyfunctional novolac resin 'dicycloglutaraldehyde varnish resin, aminotriazine phenol novolak resin, polybutadiene varnish resin and biphenyl type resin or In the adhesive portion of the present invention, the hardener content may be 30 to 100 parts by weight, and preferably 90 parts by weight relative to the parts by weight of the epoxy resin. If the amount of the hardener is less than 30 parts by weight, the amount of unreacted epoxy resin in the solid may be increased, and thus heat resistance or a procedure requiring high temperature or long time to cure the unreacted epoxy tree hardener in an amount of more than 100 parts by weight, Further, the unreacted hydroxyl group absorbability, storage stability, and dielectric properties are deteriorated. Further, the adhesive portion of the present invention may additionally include curing to accelerate the curing reaction. The curing accelerator may include an imidazole or triphenyl selected from the group consisting of imidazole and triphenyl. Base phosphines (TPP) One or both of the tertiary amine compounds, preferably an imidazole compound. Examples of the imidazole compound may include, but are not limited to, selected from the group consisting of 2-methyl(2MZ), 2-ethyl-4-methylimidazole (2E4MZ), 2- Phenyl 2PZ), 1-cyanoethyl-2-phenylimidazole (2PZ-CN), 2-undecazole (C11Z), 2-heptadecylimidazole (C17Z), and 1-cyano. If the phenolic phenol resin adheres to the strong fat, the phenolic lacquer resin, the phenolic phenolic phenolic phenolic phenolic phenolic phenolic phenolic phenolic resin If the water accelerator compound or more imidazolidinium imide (alkylimidate-2- 18- 201114874 phenylimidazolium trimellitate (2PZ-CNS) one or two or more. Curing accelerator The content may be 0.1 to 10 parts by weight, preferably 2 to 5 parts by weight, per part by weight of the epoxy resin. If the amount of the curing accelerator is less than 0.1 part by weight, the heat resistance or adhesion may be If the amount of the curing accelerator is more than 1 part by weight ', the curing reaction occurs too suddenly, and thus the storage stability is lowered. In addition, the adhesive portion may additionally include an inorganic coating (in view of handling characteristics), Heat resistance and melt viscosity. Examples of inorganic pigments may include, but are not limited to, one or two or more selected from the group consisting of vermiculite, aluminum hydroxide, calcium carbonate, magnesium hydroxide, aluminum oxide, talc, and aluminum nitride. The inorganic mash may have an average particle diameter of 〇.〇〇l#m to ΙΟ/zm, and preferably 0.005/zm to l" m. If the particle diameter of the inorganic mash is less than 〇· 〇〇1 # m, Then the agglomeration is agglomerated in the adhesive portion, or the appearance may be If the particle diameter of the inorganic coating is greater than 10/m, the coating can highlight the surface of the adhesive portion and the wafer can be destroyed when the hot pressing is performed, or the reinforcing effect of the adhesive property can be reduced. The content of the material may be from 0.5 to 100 parts by weight, and preferably from 5 to 50 parts by weight, based on 100 parts by weight of the total of the resin in the adhesive. If the amount of the inorganic mash is less than 0.5 part by weight, the inorganic mash is used. The improvement effect of the heat resistance and handling characteristics obtained by the addition may be insufficient. If the amount of the inorganic pigment is more than 1 part by weight, the workability and adhesion strength associated with the substrate may be lowered. The agent portion may additionally include a coupling agent. Thereby, it is possible to improve the adhesion between the resin component and the wafer or the coating, -19 - 201114874 or waterproof and heat-proof properties. Examples of the coupling agent may include but are not limited to The content of the oxime coupling agent may be from 0.05 to 15 parts by weight, and preferably from 0.1 to 1 by weight to one part or two or more of the resin component of the broth coupling agent, the titanium oxide coupling agent and the aluminum coupling agent. 〇 If the amount of the coupling agent is less than 重量.〇5 parts by weight, the improvement of the adhesion and adhesion may be insufficient. If the amount of the coupling agent is more than 15 parts by weight, voids may be generated or heat resistance may be lowered. Thus, the adhesive portion including the above components may have an adhesive force ranging from 50 gf to 150 gf at 130 ° C and a shear strength of 4.0 MPa or more at 150 ° C. When the agent partially satisfies the above physical properties, the advantage is that the wire bonding and molding process can be performed without a pre-cure procedure (this is typically performed after the die attach process). In this way, when the adhesive is applied Partial compliance with these conditions may prevent the wafer from escaping, moving or deviating in subsequent processes, but without pre-cure procedures in the semiconductor package. Therefore, it is possible to improve the embedding property of the film, reduce the occurrence of defects such as warpage of the wafer, and increase productivity. If the adhesive portion has a tack of less than 50 gf, detachment, movement or deviation of the wafer may occur in the grain bonding process. If the adhesive portion has a tack of more than 1 50 gf, a lot of burrs are generated in the procedure, or the handling characteristics or heat resistance can be lowered. Further, if the shear strength of the adhesive portion is less than 4.0 Å, the movement of the wafer can occur in the semiconductor program, and thus the reliability of the semiconductor package can be lowered. -20- 201114874 The method of measuring adhesive strength and shear strength is not limited in the present invention, and thus may be a typical method performed in the field 'for example, via a method using a tissue analyzer and a spherical probe, Can be adhesive. The degree of measurement can also be measured using a typical measuring device (such as a ball joint pull tester, DAGE 4000 series) that is typical in this field. The thickness of the adhesive portion as described above is not essential in the present invention as long as the adhesive portion satisfies the above relationship. For example, the thickness of the adhesive may range from 1//m to 200"m, preferably between 15 1 0 and 0, more preferably between 2 0 // m and 1 0 0 β m, but 20 Between #m and 70/m, and optimally 20//m to 60//m If the thickness of the adhesive portion is less than 1 /zm, the properties and embedding properties at high temperatures can be lowered. If the thickness of the adhesive portion is more than , the economic efficiency is lowered. Further, the die attach film of the present invention may additionally include a release film on the shape portion. Examples of the release film may include, but are not limited to, selected from the group consisting of a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a poly, a polybutadiene film, a vinyl chloride copolymer film, and a polyfluorene. One of the imine membranes is more. The surface of the release film may be subjected to a release treatment using a release type selected from the group consisting of polyoxyl, fluorine, unsaturated ester, polyolefin and wax as the substrate or two or more. Among them, a resin having high heat resistance, a polyfluorene oxide or a fluorine-based release agent is particularly preferable. Qualitative. Here, the difference between the limit of the shear/shear strength is measured from /m to better. The force relaxation 2 0 0 " m is formed in the adhesive formic acid ethylene oxide film or a resin or a solvent, the alkyd-21 - 201114874 release film typically can form from about 10 μm to about 500 # m, and preferably A thickness of about 20//m to 200//m. If the thickness of the release film is less than 10 // m, the release film may be excessively elongated during the curing process after coating. If the thickness of the release film is more than 500 μm, the economic efficiency is lowered. The method of producing the die attach film is not particularly limited. For example, a method of continuously forming a pressure-sensitive adhesive portion, an adhesive portion, and a release film on the base film may be used; or a pressure-sensitive adhesive portion and an adhesive portion may be separately formed, and then laminated to each other method. In this method, the method of forming the adhesive portion is not substantially limited. For example, the adhesive portion may be formed by a method including the following steps: a first step of dissolving or dispersing each component constituting the adhesive in a solvent to prepare a resin varnish; and a second step of applying a resin varnish to the base film or the release film And a third step of heating the base film or the release film covering the resin varnish to remove the solvent. In the first step, a resin varnish is produced using the components constituting the adhesive portion. Here, the solvent can be typically selected from the group consisting of methyl ethyl ketone (MEK), acetone, toluene, dimethylformamide (DMF), methyl cellulose (MCS), tetrahydrofuran (THF), and N-methyl. A mixture of pyrrolidone (NMP) and ethyl acetate or a mixture of two or more. Here, in consideration of heat resistance of the base film, a low boiling point solvent may be used, or a high boiling point solvent may be used to improve coatability. In the first step, dip can also be used to reduce processing time and improve dispersion. In this case, the first step may include (1) mixing a solvent, a dip and a coupling agent, (2) adding an epoxy resin and a hardener, mixing -22-201114874 to the mixture of the step (1), and (3) Mixing a mixture of the high molecular weight resin having low elasticity and the curing accelerator with the step (2). Examples of the materials available herein may include one selected from the group consisting of a ball mill, a bead mill, a three-roller, and a high-speed disperser, or a combination of two or more. The material of the balls or beads may comprise glass, alumina or zirconia. Particularly, in terms of particle dispersibility, balls or beads made of cerium oxide are preferred. In the second step of forming the adhesive portion, the prepared resin varnish is applied to the base film or the release film. There are no substantial limitations on the method of application. For example, knife coating, roller coating, spray coating, gravure coating, curtain coating, batch coating, or lip coating may be used. In the third step of forming the adhesive portion, the resin varnish-coated base film or release film is heated to remove the solvent. The third step is preferably carried out at a temperature of from 70 Torr to 250 ° C for 5 minutes to 20 minutes, but is not limited to these conditions. Further, the method of forming the pressure-sensitive adhesive portion has no substantial limitation in the present invention. For example, the pressure-sensitive adhesive portion is formed by dissolving or dispersing a component such as an acrylic resin, a crosslinking agent, a UV curable compound, and a photoinitiator in a solvent to prepare a resin varnish, and applying and drying The prepared resin varnish is applied to the base film (or release film). The method of laminating the adhesive portion and the pressure-sensitive adhesive portion is not substantially limited. For example, the lamination method may be a hot rolling lamination method or a lamination pressing method. Hot rolling lamination methods are preferred in terms of the possibilities and efficiencies of the continuous process. The hot rolling lamination method can be carried out at a pressure of from 0.1 Kgf/cm 2 to 10 Kgf/cm 2 and at a temperature of from 10 ° C to 10 Torr. -23- 201114874 The invention also relates to a semiconductor wafer comprising a die attach film, wherein an adhesive portion of the die attach film is attached to one surface of the wafer, and the base film or pressure of the die attach film The viscous adhesive portion is fixed to the ring frame of the wafer by attaching (laminating) the adhesive portion of the die attach film to the back surface of the semiconductor wafer at a temperature of from 10 ° C to 80 ° C, and A semiconductor wafer can be fabricated by fixing a base film or a pressure sensitive adhesive portion to a ring frame of a wafer. The invention also relates to a semiconductor packaging method comprising a first step of dicing a semiconductor wafer of the invention and a second step of removing a semiconductor wafer fabricated via the first step. After the above steps, the semiconductor packaging method may additionally include a third step of bonding the removed semiconductor wafer to the semiconductor substrate, and a fourth step of bonding the metal line to the semiconductor wafer and the semiconductor substrate, and molding the semiconductor wafer using the encapsulation material. The fifth step. The semiconductor packaging method of the present invention will be described in detail below. In the semiconductor package method, a wafer in which a semiconductor wafer to which the die attach film is attached is sliced is cut using a dicing device. Thereafter, the pressure-sensitive adhesive is partially cured by means for applying UV light or heat. The adhesion strength between the adhesive portion and the pressure-sensitive adhesive portion is reduced during the curing process so that the wafer is easily taken out in a subsequent process. In this case, if necessary, an extension method of expanding the die attach film is performed, whereby the interval between the wafers and the interface between the adhesive portion and the pressure sensitive adhesive portion can be easily expanded. The displacement step is performed to perform the removal step. When the wafer is taken out in the above state, the semiconductor wafer and the adhesive portion -24-201114874 are partially peeled off by the pressure-sensitive adhesive portion so that a wafer to which only the adhesive layer is attached can be obtained. The resulting wafer to which the adhesive layer is attached is attached to the semiconductor substrate. Typically, the wafer is attached under the following conditions: a temperature of from 10 ° C to 180 ° C, a time of from 0.5 seconds to 3 seconds', and a pressure of from 0.5 kgf/cm 2 to 2 kgf/cm 2 . After this procedure is performed, a metal wire bonding process and a molding process are performed so that a semiconductor device is obtained. When the adhesive portion having the adhesive strength and shear strength as described above is used in accordance with the present invention, the wafer can be inhibited in the wire bonding or molding process even if the pre-curing process is not performed after the die bonding process. The method of manufacturing the semiconductor device is not limited to these programs, and thus may additionally include any program or may change the order of the programs. For example, this method can be carried out in the order of UV curing, cutting and expanding procedures or in the order of cutting, expanding and U V curing procedures. After the wafer attachment procedure, a heating or cooling process can additionally be performed. Hereinafter, the present invention will be described in more detail by way of the following examples and comparative examples. However, the scope of the invention is not limited to the following examples. Preparation Example 1: Preparation of High Molecular Weight Resin with Low Elasticity 100 parts by weight of butyl acrylate, 100 parts by weight of ethyl acrylate, 70 parts by weight of acrylonitrile, 8 parts by weight of glycidyl methacrylate, 4 parts by weight The acrylic acid and 750 parts by weight of deionized distilled water were poured into a 3-liter reactor equipped with a stirrer, a nitrogen substitution device and a four opening of a thermometer. Then, 2 parts by weight of a suspending agent (polyvinyl alcohol diluted with water to 4% -25 to 201114874 (trademark: NH-17, by Nippon Ghosei)) by weight of a molecular weight modifier (dodecyl mercaptan), To prepare. The prepared mixture was subjected to a nitrogen substitution procedure for about 1 hour and then at 5 5 °C. When the temperature reached the predetermined temperature, 2 parts by weight of diethyl hexyl peroxydicarbonate (Trigonox EHP, manufactured by Akzo Nobel) diluted with 2% by weight of ester was added to start the polymerization. At the end of 4 hours after the start of the polymerization, the reaction was completed. Then, the reaction product was washed with deionized distilled water using a centrifugal separator and a vacuum oven. Thereby, the yield of the obtained polymer beads was 90%, and the weight average molecular weight of the particles was 750,000 by gel permeation chromatography, the molecular weight of the beads was divided, and the glass transition temperature of the beads (Tg) ) is 10 °C. The prepared beads were sufficiently dissolved in methyl ethyl ketone for 1 day, and then dried. Example 1 Preparation of a film for dicing (pressure-sensitive adhesive film) Preparation of UV (ultraviolet light) curable pressing was carried out in the following manner. Composition: relative to 100 parts by weight of the polyfunctional oligomer, part by weight of the Darocur TPO as a photoinitiator and one part by weight of an acrylic copolymer (by copolymerizing acrylic acid 2-B and A) Prepared with methyl acrylate and having a weight basis of 800,000 and a glass transition temperature of 10 ° C), 5 parts by weight of isocyanate hard 10 parts by weight of a mixture of 20,000 weight average molecular weights of the conventional g. Then, the UV-curable pressure-sensitive composition and the 0.3 mixture were heated to acetic acid B (trademark starter to make the polymerization, and the beads were obtained. The beads were 4.0, the polymerization-sensitive adhesive mixture Ί 1 00 heavy basis The hexyl ester homopolymerizing agent and oligomer are coated on a polyester film which has been subjected to release treatment and has a thickness of 38; zm in -26-201114874 to obtain a thickness of 20 〆m after drying, and at 110 ° C After drying for 3 minutes, the dried pressure-sensitive adhesive layer was laminated on a polyolefin film as a base film having a thickness of 90 μm, thereby preparing a pressure-sensitive adhesive film for cutting. Preparation of die attach film 75 parts by weight of YDCN-500-1 P (cresol novolac epoxy resin, by KUKDO Chem. Co., Ltd., mixed and agitated in methyl ethyl ketone (MEK), Manufactured, epoxy equivalent = 200, softening point = 52 ° C), 25 parts by weight of YD-128 (bisphenol A epoxy resin, manufactured by KUKDO Chem. Co., epoxy equivalent = 187), 60 parts by weight KPH-F2001 (phenol novolac resin, by Kolon Chem. Co., Ltd., hydroxy 値 = 1 〇 6, softening point = 8 8 ° C), 200 parts by weight The high molecular weight resin prepared in Example 1 was prepared, 0.5 parts by weight of 2-phenylimidazole (2PZ, manufactured by SHIKOKU Chemical Co.), and 2 parts by weight of a decane coupling agent (KBM-403, manufactured by Shinetsu Chemical Co. Ltd.). , 7-glycidoxypropyltrimethoxydecane), and 30 parts by weight of a vermiculite distillate (UFP-30, manufactured by Denka Kagaku Kogyo Co. Ltd., average particle diameter = 150 nm), to prepare Resin varnish. The prepared resin varnish was coated on a base film having a thickness of 38 μm (RS-21G, a polyfluorene PET release film, manufactured by SKC), and dried at 110 ° C for 5 minutes. An adhesive layer having a thickness of 20 /zm for grain bonding was prepared. The adhesive layer prepared in -27-201114874 was prepared at 40 ° C and 5 kgf / cm 2 using a hot roll laminator. Lamination on a pressure-sensitive adhesive film including a UV-curable pressure-sensitive adhesive layer, thereby preparing a die attach film. Example 2 A die attach film was prepared by the same method as in Example 1, In addition to controlling the pressure-sensitive adhesive film to have a thickness of 30 / / m and using a thickness of 80 # m In addition to a hydrocarbon pressure-sensitive adhesive film membranes prepared. Example 3 was prepared as described in Example grains by the same method of attachment film 2, except that the binding of crystal grains in the thickness of the adhesive layer is controlled to 60 y m. Example 4 A die attach film was prepared by the same method as in Example 2 except that the thickness of the adhesive layer for grain bonding was controlled to be 10 // m. Comparative Example 1 A die attach film was prepared by the same method as in Example 1, except that by controlling the pressure sensitive adhesive film to have a thickness of 10 // m and using a polyolefin having a thickness of 100 //m The film is prepared in addition to a pressure sensitive adhesive film. Comparative Example 2 A die attach film was prepared by the same method as in Example 1, except that the pressure sensitive adhesive film was controlled to have a thickness of 40 # m and a polyolefin having a thickness of 70 -28 to 201114874 #m was used. The film is prepared in addition to a pressure sensitive adhesive film. Comparative Example 3 A die attach film was prepared by the same method as in Comparative Example 2 except that the thickness of the adhesive film for grain bonding was controlled to be 5/Czm. The relationship between the thicknesses of the layers of the film prepared by the examples and the comparative examples is shown in Table 1 below. Table 1 Example comparison, just 1 2 3 4 1 2 3 Base film (A) (4) 90 80 80 80 100 70 70 Pressure-sensitive adhesive layer (B) (4) 20 30 30 30 10 40 40 Adhesive layer (C) (4) 20 20 60 10 20 20 5 B/A 0.222 0.375 0.375 0.375 0.1 0.571 0.571 B/C 1 1.5 0.5 3 0.5 2 8 Regarding the die attach film as described above, the physical properties thereof were measured by the following method, and the results were arranged in See Table 2 below. 1. Burr Suppression Characteristics At 50 °c, the die attach film was laminated on a 100 // m wafer and wafer ring frame using an installer. Then, using a cutting device (DAD-64〇' -29 - 201114874 mm/sec cut wafer manufactured by Disco Co. Ltd) at rpm = 40 tC, speed = 50, wafer size = 5 mm x 5 mm, and total = 100 Under the condition of the mother. Second, the burrs generated on the wafer are measured. 2. Scalability
Huggl e 圍。藉 在切割程序之後，使用擴展機（HS-1810，由 Co. Ltd.製造），將經切割之晶圓擴展至5 mm之窜 此估計擴展性。 3. 碎裂抑制特性 晶片（ 碎裂。 在切割程序之後，將具有5 mmx5 mm尺寸二 總數=1 〇〇 )剝離，然後觀察在每一晶片之側面上纪 測量在晶片中具有比20 // m更大之尺寸的碎裂物。 4.取出特性 高壓汞 。在具 且產生 在切割程序之後，具有100 m】/cm2輻射強度泛 燈被照射，然後經切割之晶片（總數=1 〇〇 )被取tt 有黏著劑部分之晶片被取出的情況以符號〇表示， 裂痕或晶片不取出之情況以符號x表示。 表2Huggl e Wai. After the cutting process, the expanded wafer (HS-1810, manufactured by Co. Ltd.) was used to expand the cut wafer to 5 mm. This estimated scalability. 3. Fragmentation suppression characteristics of the wafer (fragmentation. After the cutting procedure, the total size of 5 mmx5 mm size 2 = 1 〇〇) is stripped, and then observed on the side of each wafer, the measurement in the wafer has a ratio of 20 // m larger size fragments. 4. Take out the characteristics of high pressure mercury. After the cutting process is performed, the illuminating intensity with a radiation intensity of 100 m]/cm2 is irradiated, and then the wafer to be diced (total = 1 〇〇) is taken, and the wafer with the adhesive portion is taken out as a symbol 〇 Indicates that the crack or wafer is not taken out is indicated by the symbol x. Table 2
實1 列 比較用實例 1 2 3 4 1 2 3 毛邊數 0 0 0 0 6 3 4 碎裂數 0 0 0 0 2 5 6 取出特性 〇 〇 〇 〇 〇 〇 X -30- 201114874 如以上表2之結果可見的，本發明之實例顯出優越之 毛邊及碎裂物抑制特性及優越之取出特性。相反地，比較 用實例1 (其中B/A之値低於本發明之範圍）顯示：在程 序中產生很多毛邊。比較用實例2及3(其中B/A之値超 過本發明之範圍）顯示：產生很多碎裂物。另外，比較用 實例3 (其中B/C之値超過本發明之範圍）顯示：產生很 多毛邊及碎裂物且取出特性是差的。 依本發明，可以提供一種晶粒接附膜，其可以在切割 程序中抑制毛邊產生及晶片飛揚，且在晶粒結合程序中顯 現出優越之擴展及取出特性。另外，晶粒接附膜可以在金 屬線結合或模製期間防止晶片之剝離、晶片之移動或晶片 之偏離。因此，依本發明可能改良包埋性，抑制晶圓或接 線用基材之翹曲，且加強半導體封裝程序之生產力。 雖然已參考某些例示用之具體實例顯示及描述本發明 ，精於此技藝之人士了解：本發明中可以有很多形式及細 節之改變’卻不偏離如所附之申請專利範圍所定義之本發 明的精神及範圍。 -31 -Real 1 column comparison example 1 2 3 4 1 2 3 Burr number 0 0 0 0 6 3 4 Fragment number 0 0 0 0 2 5 6 Take out characteristics 〇〇〇〇〇〇X -30- 201114874 As shown in Table 2 above As a result, it can be seen that the examples of the present invention exhibit superior burrs and fracture inhibiting characteristics and superior take-up characteristics. Conversely, comparison with Example 1 (where B/A is below the scope of the invention) shows that a lot of burrs are produced in the program. Comparison of Examples 2 and 3 (wherein B/A is beyond the scope of the present invention) shows that many fragments are produced. Further, Comparative Example 3 (wherein B/C is more than the range of the present invention) shows that a lot of burrs and fragments are generated and the take-out characteristics are poor. According to the present invention, it is possible to provide a die attach film which can suppress burr generation and wafer flying in a dicing process and exhibit superior expansion and take-out characteristics in a die bonding process. In addition, the die attach film can prevent peeling of the wafer, movement of the wafer, or deviation of the wafer during bonding or molding of the metal wire. Therefore, according to the present invention, it is possible to improve the embedding property, suppress the warpage of the substrate for wiring or wiring, and enhance the productivity of the semiconductor packaging process. Although the present invention has been shown and described with reference to the specific embodiments of the present invention, it is understood by those skilled in the art that the invention may be modified in many forms and details without departing from the scope of the appended claims. The spirit and scope of the invention. -31 -