TW201103163A - Nitirde semiconductor light emitting diode device and method of fabricating the same - Google Patents

Abstract

A nitride semiconductor LED device including a substrate, an N-type doped layer, an active layer, a P-type doped layer, a first electrode and a second electrode is provided. The N-type doped layer is disposed on one side of the substrate. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well between the quantum barrier layers. The quantum barrier layer is a superlattice structure including a quaternary nitride. The P-type doped layer is disposed on the active layer. The first electrode is disposed on the P-type doped layer. The second electrode is disposed on the mesa exposed by the N-type doped layer or on the other side of the substrate.

Description

201103163 P51970143TW 29729twf.doc/n VI. Description of the invention: [Technical field of the invention] A semiconductor element and a method for manufacturing the same, and a semiconductor diode, a diode element, and a method of manufacturing the same . [Prior Art] Efficient (four) development, because of high luminous efficiency at the same time j. + Conductor compound material The advantages of low price, etc., gradually become a large range of modulation, and the material semiconductor material is suitable as the light to / machine. Among them, nitriding can be applied to full-color displays, materials for emitting light-emitting bands, conductor lasers, and the like, in particular, limbs, chirped electronic components, and half-components. L-directed self-heating (10) blue light-emitting diodes, the light-emitting diode-type doped layer, the active layer and the P-type doping/1 sequence 2 are electrically connected to the N-type doped layer on the substrate, respectively. The N-type doped layer and the p-barrier layer and the quantum 1 := located in the quantum barrier layer allow the band gap to escape larger than the energy gap of the quantum lining barrier layer to increase the electron hole to the junction :: The material that falls into the quantum well is the sound of the carrier. In general, the material of the quantum layer is chosen to be between the quantum 丄 and 1. Quantum Barrier (4) Field Effect on Luminous Efficiency ^The number of hangs is similar _ to reduce θ) Kicking A] to increase the energy barrier of the quantum barrier layer 201103163 x -»^ /vi43TW 29729twf.doc/n to be larger than the quantum well The energy gap is to a certain extent, such as AUGaylriiiyN, where X and y are between 〇 and 1. However, the large addition of the A1 content causes a decrease in the crystal quality of the subsequently grown quantum well, which tends to cause pits, increase leakage current, and effectively suppress the piezo effect and enhance the internal light extraction efficiency ( Internal quantum efficiency ; IQE ). A nitride semiconductor light-emitting element is disclosed in U.S. Patent Publication No. US20080093610, in which the quantum barrier layer of the active region is a multi-layered structure. The quantum barrier layer of this patent includes an InGaN layer, an AlInN layer, and an inGaN/GaN superlattice structure, which can form a good interface with the p-type doped layer and prevent Mg diffusion of the N-type doped layer into the active layer. However, if the quantum barrier layer containing AlInN has a sufficiently large energy gap, the 'A1 content needs to be added to more than 15%, and whether the desired quantum barrier can be achieved is still questionable. In addition, a large increase in the Ai content does not effectively reduce the piezoelectric effect between the quantum well and the quantum barrier layer. SUMMARY OF THE INVENTION Μ has f 2, Ϊ 提供 provides a nitrogen (four) material light-emitting diode can help to explain: the super-lattice structure of the meta-nitride, can be attributed to the superlattice structure of the nitride, capable of Prevent crystal defects, to improve the lattice mismatch between the early layers of P to produce the probability of electron hole pair bonding, and then improve the light output efficiency of the internal 201103163 29729twf.doc/a. The present invention provides a nitride semiconductor light-emitting diode element comprising a base, an N-type doped layer, an active layer, a p-type hybrid layer, and a first electrode and two electrodes. The N impurity layer is located on the side of the substrate and includes at least one quantum well structure. Quantum == and a quantum well located between the quantum barrier layers. Super-lattice structure of quantum nitride The Ρ-type doping layer is located on the exposed platform of the active impurity layer or the pole of the substrate is located in the 掺-type doping embodiment, and the above-mentioned quaternary nitride material package ai-a- bN ' a, b are respectively between the Oij gate superlattice structure by week # and a b<

Layer, week _ ^ ^ ~ A1JnbGai-a-bN layer and AlcIndGai.c dN * ^ Alt! A1JnbGai-N ^ Chan: ΓΓ bTN layer and GaN layer, or periodic stacking white d, seven layers, of which C, Equal to d. Another ice such as 'd Ha is not equal to c, b and the superlattice knotted layer (4) is recorded at least twice, the thickness of the 50_^^-layer is, for example, between about 〇·5 rnn to about

InfGawHH—In the example, the material of the quantum well described above includes in + p <1/ p IWpN'f, n, P are between 〇 and 1, respectively, and the thickness of the quantum well described above is, for example, Um玍 is between about 20 nm. ~ 201103163 P51970143TW 29729twf.doc/n In one embodiment of the invention, the active layer has a thickness of, for example, 3 between about 3 nm and about 500 nm. In one embodiment of the invention, the active layer described above comprises a single-well structure. In one embodiment of the invention, the active layer comprises a majority sub-well structure. In an embodiment of the invention, the material of the substrate comprises bluestone, yttrium, SiC, ZnO or GaN. In an embodiment of the invention, the above-mentioned doped layer includes GaN doped or erroneous. In one embodiment of the invention, the above-described type includes GaN doped with magnesium or zinc. In one embodiment of the present invention, the nitride layer is provided in a buffer layer between the substrate and the erbium doped layer = ^^ including (10), AlqGai_qN, Sic, Zn〇, ZnTe (^ gN 'where q is between 〇 and 1. The polar body is 阙+, and the upper nitrite body emits two layers. The δ force-doped layer and the wire are relieved. ίη^_3 layer and GaN layer are composed and layer , wherein, m is between _ and 0.3. (4) In the embodiment, the nitride semiconductor light-emitting element further includes a photo-contact layer. - The Ρ type between the electrodes is connected to the present invention, and the above-mentioned nitride semiconductor light-emitting diode 201103163 P51970143TW 29729twf.doc/n the polar body element further includes an electron barrier between the P-type doped layer and the active layer The present invention further provides a nitride semiconductor light-emitting diode element comprising a substrate, an N-type doped layer, an active layer, a p-a hybrid layer, an electron barrier layer, a first electrode and a second electrode. The impurity layer is located on one side of the substrate on the == doped layer, which includes at least a quantum well structure. Quantum two quantum barrier And a quantum layer and a host layer between the quantum barrier layers. The electron barrier layer is located in the germanium-type doped germanium barrier layer, and the ultra-energy gap including the quaternary nitride is higher than the energy gap of the quantum barrier layer. The material of the quaternary nitride described in the embodiment of the invention includes AlgInhGai.g_hN, g, i, and g, and the superlattice structure is composed of g h<l of the periodic layer. Periodically stacked A1 In G gh layer and ΑΙίΙη^_ΗΝ stacked AlgInhGaij, periodic layer

The AynhGai_g.hN layer, j_ θ / periodic lamination j, k are respectively composed of 〇 and j, 曰+?(10) layers, where i is equal to j. In addition, 曰1』<1, and § is not equal to 丨,}1 does not, J is the period of the super-day grid structure and every _ household in the superlattice structure, and the duration is at least twice. Between 50 _. The degree of calling is, for example, between about 0.5 and about _#_t in the material.

The material in the Ind.fN or AlnGajni N,f includes P HpN f, n, P between 0 and 1, respectively, 201103163 P51970143TW 29729t\vf.doc/n and n + p < In an embodiment, the thickness of the quantum well described above is between about 1 nm and about 20 nm. In the embodiment of the invention, the thickness of the active layer is, for example, between about 3 nm and about 500 nm. In an embodiment of the invention, the active layer encapsulation structure described above. Ping Liqian • (4)—The implementation of the above-mentioned active layer includes most of the quantum well structures. In one embodiment of the invention, the material of the substrate comprises a window stone, ruthenium, SiC, ZnO or GaN. In one embodiment of the invention, the material of the above-mentioned N-type doped layer includes erbium-doped or erbium-doped GaN. The material of the P-type doped layer described above in one embodiment of the invention includes GaN doped with magnesium or zinc. ♦ In the real-time, the above-mentioned nitride semiconductor emits light in a buffer layer between the N-stacks. Slow =:: package, N, AlqGai·#, such as, do... where q is between 〇 and 1. In the polar body embodiment, the material for the stress relaxation whiteness between the nitride semiconductor light-emitting layer and the active layer includes an InmG^N layer and a (10) layer composed of an I layer, ', D structure, wherein m is between 001 and 03. In an embodiment of the present invention, the nitride semiconductor light-emitting device is further provided on the P-corrugated layer and the first-electrode contact layer. The invention includes a nitride semiconductor light-emitting diode element including a doped layer, an active layer, a p-type doped layer, an electron barrier layer, an =electrode and a first electrode. The erbium doped layer is on the side of the substrate. The active germanium is located on the germanium-type doped layer, and includes the second quantum barrier layer and the quantum barrier layer at t; the barrier layer is a first-superlattice structure impurity layer including the first-weight nitride Between the layer and the active layer, the energy gap of the type doped λ and the electron barrier layer is higher than the exposed surface of the quantum barrier layer 4 or on the other side of the substrate. In one embodiment of the present invention, the material of the above-mentioned quaternary nitride includes AAIKGai_a_bN, a and b are respectively between q and i, and the & +匕2-7-superlattice structure is periodically stacked. The AlaInbGai.a.bN layer is on the 1st floor, the A1JnbGai.a-bN layer and the 1ca 』 周期, the AUnbGah.bN layer and the GaN layer of the θ, or the AlaInbGai.bN layer of the periodic layer insect, IneGai eN The layer is composed of _ layer, ^ ; is between ° and 1, G + d <: l, h is not equal to c, b + . , outside, the number of times of the first superlattice structure is cascaded to

And the thickness of each of the super-zero grid structures is, for example, between about 〇.5 nm and about 50 nm. In one embodiment of the present invention, the second quaternary nitride material 201103163 F51970143TW 29729twf.doc/n includes AlgInhGai-g_hN, g and h are respectively between 〇 and i, and g is <; 1. The second superlattice structure is composed of periodically stacked eight-gauge Gai_g hN layer disks

The AlJnjGawN layer, the periodic layered layer of the mailing layer N and the ΙηΛ (five) layer, the periodically stacked AlgInhGai.g.hN layer and the (10) layer, or the periodically stacked AlglnhGai-g-hN layer, the InkGai_kN layer and the GaN layer, wherein Ί k is between G and 1, respectively, i + j < i, and g is not equal to }, and 匕 is not equal to j. In addition, the number of times of the second superlattice structure is cascaded to

J is twice, and the thickness of each layer in the second superlattice structure is, for example, between about 〇5 nm to about 5 〇 nm. In the embodiment of the present invention, the material of the quantum well includes nfGai-fN or AlnGapIn-N, and f, n, and p are respectively 〇 且 and η + ρ < 1 〇 』

In one embodiment of the invention, between about 1 nm and about 20 nm, in one embodiment of the invention, between about 3 nm and about 500 nm, in one embodiment of the invention, the well structure . In an embodiment of the invention, the sub-well structure. In one embodiment of the invention, stone, sand, SiC, ZnO or GaN. The thickness of the quantum well is, for example, the thickness of the active layer, for example, the active layer includes a single quantum, and the active layer includes a plurality of materials of the substrate, including a sapphire. In an embodiment of the present invention, the above Including Mu Shi Xi or wrong GaN. Material package of U-hetero layer 11 201103163 P51970143TW 29729twf.doc/n In one embodiment of the invention, GaN is incorporated. The material of the P-type doped layer described above is included in the present invention, and the nitriding material of the nitriding material body includes a buffer layer between the substrate and the doped layer. The material of the buffer layer includes GaN, AlqGai qN, %, Zn〇, ZnTe〇 or

MgN, where q is between 〇 and i.

In an embodiment of the invention, the nitride semiconductor light emitting body element further comprises a stress relaxation layer between the N-type doped layer and the active layer: the material of the stress relaxation layer comprises an InmGai mN layer and a (10) layer A layered structure consisting of m between 〇〇1 and 〇3. In the embodiment of the present invention, the nitride semiconductor light-emitting diode 7L further includes a (four) type contact layer between the P-type doped layer and the first electrode. Based on the above, the quantum barrier layer of the present invention is a superlattice structure including a quaternary material, and the effect of the piezoelectric effect is improved, thereby improving the crystal quality of the subsequently grown quantum well, and cut back

The occurrence of leakage current. In addition, the electron-transferring layer of the present invention is a super-corrugated cell structure including the other-four nitrides, which can prevent crystal defects caused by lattice mismatch between the quantum barrier layer barrier layers. Such as wrong pits and so on. The above-described features and advantages of the present invention will become more apparent from the following description. [Embodiment] 12 201103163 λ ji 7 / υ i*+3TW 29729twf.d〇c/n The first embodiment is 1A is a schematic section of a light-emitting diode component of Yixianfa (4)-Shiguan scale-slightly nitrided object Figure. In the first place, the substrate 100 is provided. The material of the substrate 100 is, for example, sapphire, samarium, Sic, Zn or GaN. Next, it is formed on one side of the substrate 100! ^ Type doped layer 1 〇 2. The material of the ^_ type doped layer 1〇2 is, for example, GaN doped with lanthanum or yttrium, and is formed by, for example, metalorganic chemical vapw deposition (M0CVD). In one embodiment, the N-type wipe layer ι 2 is, for example, having a platform (mesa) 1 〇 9 for subsequent formation of the second 110. In a consistent embodiment, before the step of forming the N-type doped layer 1〇2, a buffer of $1 may be selectively formed between the substrate (9) and the doped layer 1〇2. The punch layer 1〇1 is a problem of lattice mismatch caused by the growth of the buffer N-type doped layer 1〇2 on a heterogeneous substrate. The material of the buffer layer ιοί is GaN, AlqGai qN, Sic, for example. • Zn〇, ZnTe〇 or MgN, where q is between 〇 and 1, and is formed by, for example, low-temperature epitaxial growth (4〇〇~9〇〇.〇. Then, in the N-type doped layer An active layer is formed on 1 2. The thickness of the active layer 104 is, for example, between about 3 nm and about 5 〇〇 nm. The active layer includes at least one quantum well structure, wherein the quantum well structure includes sequentially formed in the N-type a quantum barder layer l〇4a, a quantum well (i)4b, and another quantum barrier layer 104a on the doped layer. The active layer l〇4 is also a light-emitting layer. Using the above-mentioned quantum well 13 201103163 jW 29729twf.doc/n structure 'electronic hole pair will be combined in quantum well 1G4b to release photons The quantum barrier layer 104a of the present invention is a superlattice structure including quaternary nitride (which is, for example, in structure). In other words, the quantum barrier layer 1 is known as a superlattice structure. The material may be a tetra-n-nitride and another quaternary vapor, a quaternary nitride and a germanium nitride, a tetra-n-nitride and a binary nitride, or a quaternary nitride, a two-nitride and a binary nitride. In one embodiment, the material of the quaternary structure of the quantum barrier layer 10a is, for example, eight ga ga, wherein a and b are between 〇 and 1, respectively, and a + b < j. Therefore, the superlattice structure of the quantum barrier layer 104a can be formed by periodically laminating (A1JnbGai-a-bN layer and A1JndGai" layer of the peri〇dica, AlJnbGanbN layer and ineGai eN layer of the periodic layer®, period The stacked AlaInbGai_a.bN layer and the GaN layer, or the periodically stacked A1JnbGai a_bN layer, the heGa^N layer and the GaN layer, wherein c, d, and e are between 〇 and 1 respectively 'c + d < 'And a is not equal to c, b is not equal to d. The number of cycles of the superlattice structure described above is at least twice. The thickness of each layer is, for example, between about 〇5 nm and about 5 〇 nm. On the left side of Fig. 1A, the energy band distribution of the quantum barrier layer 1 () 4a (banddiag leg), from the lining barrier The layer l〇4a is a quaternary nitride in which the material of the super-lattice structure formed by at least two material layers which are periodically laminated, and thus the band diagram of the energy band changes periodically. The thickness of the quantum barrier layer 1 can be determined by the thickness of each material layer in the superlattice structure and the number of times of periodic lamination. In addition, the material of the 1 sub well 104b is, for example, InfGai fN or 14 201103163 P51970143TW 29729twf.doc/n

AlnGapInupN, where f, η, p are between 〇 and i, respectively, and n + p < The thickness of the quantum well 104b is, for example, between about Å nm and about 2 〇 nm. In addition, lining resists j1 early layer l〇4a and quantum well; i 〇4b is formed by metal 〇rganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (molecular-beam). Epitaxy; MBE), and its growth temperature is, for example, between about 600 ° C and about 900 ° C. In one embodiment, the quantum barrier layer 10a is, for example, a superlattice structure formed by a layer of AlaInbGai_a_bN and a layer of lneGai_eN which are periodically stacked, and the material of the quantum well 104b is, for example, Inf〇ai fN. First, the growth temperature is 6 〇〇 to 9 以 by the organometallic chemical vapor deposition method or the molecular beam epitaxy method. An ineGal eN layer is formed on the N-doped layer 1〇2, and an AlaInbGai a bN layer is formed on the surface of the IneGai-eN layer at a temperature of 7〇〇~90CTC, and then the periodic layer is at least twice. The method forms a quantum barrier layer 1Q4a having a superlattice structure. Then, on the surface of the quantum layer l〇4a at 60040 (the TC forming material is a quantum well of Inf〇ai fN). Subsequently, another quantum barrier layer is fabricated by the method described in the t-quantum well 1 On 〇4b, Yuan Chengba has an active layer 104 of a single quantum well structure. In particular, since the quantum barrier layer 104a of the present invention is a quadruple structure, the superlattice structure of the compound is formed. Therefore, not only can the quantum resist P early layer be satisfied, the gap is at least greater than the energy gap of the quantum well 〇 2 eV or more, and ^ can help release the stress of the active layer and effectively reduce the piezoelectric effect. The barrier layer 1Q4a helps to increase the amount of subsequent growth. 15 201103163 P5I970143TW 29729twf.doc/n The crystal quality of the sub-well 104b reduces the generation of defective pits, the generation of current, and the efficiency of internal light extraction.

In the embodiment, the step of forming the active layer 1 〇 4 is performed to selectively the N-type doped layer 102 and the active layer 1 I 4 strain-release layer 103. The stress relieves the stress of the active layer 104. Stress relief layer ‘example is ί

The InmGa b mN layer and the GaN layer are composed of the same name, and m is between 0.01 and 0.3 ^ j ( lamina_ 』 - TM1 Τη (Τ-ο χτ

The thickness of the layer and the GaN layer is, for example, between about m 1 'mN 丄 mi ^ 矣 5 5 0 π τη. The method for forming the stress relaxation layer 103 is, for example, β隹~” vapor deposition method. After U疋进仃面metal chemistry, please continue to refer to the figure, on the active layer 1〇4: 2nd=Faguang is performing organometallic chemistry Vapor deposition method. In the embodiment, an electron blocking layer 105 may be formed between the active layer and the doped layer 1G6 before the step of forming the p-type impurity layer 106. The electron barrier layer 1〇5 further resists electrons from escaping the active layer, so that the energy barrier of the electron barrier layer 1〇5 is spread over the quantum barrier layer. The electron-transferred layer milk is, for example, AlGaN. The layer is either a superlattice structure of the A1GaN layer and the GaN layer. Next, a first electrode is formed on the P-type doped layer 106. The first electrode 108 @material is, for example, Cr/Au, IT〇$ Zn〇 In an embodiment, a p-type contact layer ι7 may be selectively formed between the P-type doping layer 106 and the first electrode (10) before the step of forming the first electrode 108. 16 201103163 P51970143TW 29729twf The .doc/n P-type contact layer 107 serves to reduce the impedance between the P-type doping layer i〇6 and the first electrode i〇8. The material of the contact layer 107 is, for example, G aN ' doped with magnesium or zinc and is formed by, for example, performing an organometallic chemical vapor deposition method.

Next, a first electrode no is formed on the land 1〇9 exposed by the N-type doping layer 102. The material of the second electrode 11A is, for example, Ni/Au or Ti/Al/Ti/Au. Thus far, the manufacturing process of the nitride semiconductor light-emitting diode element of the first embodiment is completed. In particular, when the material of the substrate 1 is a conductive material such as GaN, the second electrode 110 may also be formed on the other side of the substrate 100 as shown in FIG. 1B, and thus the N-type doped layer 1〇 2 It is also not necessary to form the platform 109 for the second electrode 11 .曰 Next, the structure of the nitride semiconductor obtained by the first embodiment will be explained. Referring to FIG. 1AWB, the nitrogen-emitting diode component of the present invention comprises a substrate 1 , a doped layer 2 , an active layer 1 , a p-doped layer 106 , a first electrode 108 , and a first Two electrodes ιι〇. The & type doped layer 1〇2 is located on one side of the substrate. The active layer is just on the N-type impurity layer 102 and includes at least one quantum well structure. Quantum well structure, two quantum barrier layer HMa and Γ3 located in the quantum barrier layer. The quantum barrier layer 104a is a supercrystal including a quaternary nitride. ,,,. Structure. The P-type doped layer 106 is on the active layer 1〇4. The layer touches. The second electrode 11G is located on the flat-blade of the N-type doped layer or on the other side of the substrate. In addition, the retardation = "the problem that the 常数1 is located between the substrate and the N-type doped layer 1 〇 2 <, the lattice constant of the absorbing layer 102 growing on the heterogeneous substrate is generated. The stress relaxation layer 103 is located. Between the N-type doped layer 102 and the active layer 17 201103163. 29729twf.doc/n 104, as the stress releasing the active layer l〇4, the electron barrier layer ι〇5 is located in the active layer 1〇4 and the P-type doped layer Between 1 and 6, the electron-escape active layer 10OP-type contact layer 107 is located between the p-type layer and the first electrode 108 as the p-type doped layer 1〇6 and the first The impedance between an electrode 108. The above embodiment is exemplified by an active layer including a single quantum well structure, but the present invention is not limited thereto. Those skilled in the art will understand that the present invention is active. The layer may also be a quantum well structure. That is, the active layer of the present invention includes a plurality of quantum well structures, wherein the quantum barrier layer 104a and the quantum well 1 are alternately stacked at least twice. The manner is disposed on the stress relief layer 1〇3, as shown in FIG. 1C and FIG. 1D. 2A according to a second embodiment of the present invention is a nitride semiconductor light emitting depicted a schematic cross-sectional view of a pole of the element. Chill Referring to Figure 2A, first, a substrate 2〇〇. Next, the substrate 2〇〇

An N-type doping layer 2〇2 is formed on one side. In an embodiment, before the step of forming the N-type doping layer 202, the buffer layer 2 (n. substrate 2) may be selectively formed between the substrate 2 and the N-type germanium doping layer 202. The material and formation method of the buffer layer 2〇1 and the N-type doping layer 2〇2 are similar to those of the first embodiment, and will not be described here. Then, the active layer 2 is formed on the N-type doping layer 2〇2. 〇 4. The active layer spoon thickness, for example, 疋 is between about 3 nm and about 5 〇〇 nm. The active layer 18 201103163 P51970143TW 29729twf.doc/n 204 includes at least one quantum well structure, wherein the quantum well structure includes sequential formation a quantum barrier layer 2〇4a, a quantum well 204b, and another quantum barrier layer 204a on the N-type doped layer 202. The material of the quantum barrier layer 2〇4& is, for example, GaN, InxGai-xN or AlxGayIni_x_yN, Where x and y are between 〇 and 1, respectively, and x + y < !. The material of the quantum well 1〇4b is, for example, InfGauN or AlnGapIribn-pN, where f, n, p are between 〇 and 1, respectively And η + Ρ < 1. The thickness of the quantum well i 〇 4b is, for example, about 1 nm

Between about 20 rnn. Further, the quantum barrier layer 1 is known to be a method of forming a quantum well, for example, an organometallic chemical vapor deposition method or a molecular crystal method. Thereafter, an electron barrier layer 2〇5 is formed on the active layer 204. The barrier layer 205 is a superlattice structure including a quaternary nitride. In other words, the material of the superlattice structure of the sub-barrier layer 205 may be a quaternary nitride and a quaternary nitride, a quaternary nitride and a ternary nitride, a quaternary nitride, a binary nitride, or It consists of quaternary nitrides, tribodies and binary nitrides. In one embodiment, the quaternary nitrogen material of the electron barrier layer 2〇5 is, for example, 疋AlglnhGai-g-hN, wherein g and h are respectively located between the gates of 〇 and 丄

And g+h<;1. Therefore, the superlattice structure of the electron barrier layer 2〇5 may be a two-period laminated AlgInhGai_g_hN layer and an AliInjGaKg_hN layer and an inkGai kN layer, a periodic layer, an AlgliihG^N layer and a GaN layer, or a periodically layered layer of AliInjGai i jN, InkGai_kN layer and GaN layer, which is between 丨ΙΟ and 1, especially 隹 .. u '刀别介J 1 J 1 and g not temple in i, h is not equal to Bu 1 205 layer superlattice structure The number of times of periodic lamination is at least twice, 19 201103163 P51970143TW 29729twf.doc/n The thickness per layer is, for example, between about G 5 nm and about Μ·. 2A is the energy band distribution diagram of the electron barrier layer 2〇5, since the electron barrier layer 205 is a superlattice structure formed by periodically stacking at least two material layers, wherein the material is quaternary nitrogen. The compound, therefore its band profile changes periodically. The thickness of the electron blocking layer 205 can be determined by the thickness of each material layer in the superlattice structure and the number of times of periodic lamination. In addition, the method of forming the electron blocking layer 205 is, for example, performing an organometallic chemical vapor deposition method or a molecular beam epitaxy method, and the growth temperature thereof is, for example, between about 6 〇〇c and about ii 〇 (Tc). Since the electron barrier layer 2〇5 φ of the present invention is a superlattice structure including a quaternary nitride, it is possible to prevent generation due to lattice mismatch between the quantum barrier layer 204a and the electron barrier layer 205. Crystal defects, such as misalignment and pits, etc. In addition, the quantum barrier layer 204a, the quantum well 204b and the electron barrier layer 205 of the present invention can be completed in the same reaction chamber, reducing cost and reducing manufacturing of light-emitting diodes. The time of the body element. Thereafter, referring to FIG. 2A, a p-type doping layer 206 is formed on the electron barrier layer 205. Next, a first electrode 208 is formed on the p-type doping layer 2〇6. In the example, before the step of forming the first electrode 2〇8, the P-type contact layer 207 may be selectively formed between the P-type doping layer 206 and the first electrode 208. Then, the N-type doped layer is formed. The second electrode 210 is formed on the exposed platform 209. At this point, the second is completed. The manufacturing process of the nitride semiconductor light-emitting diode element of the embodiment. The material and formation method of the P-type doping layer 206, the p-type contact layer 207, the first electrode 208 and the second electrode 210 are similar to those of the first embodiment. The second electrode 2 can be formed on the substrate 200 when the material of the substrate 200 is a conductive material, such as a secret, when the material of the substrate 200 is a conductive material such as a secret. On the side, as shown in FIG. 2B, the type doping layer 202 does not need to form the terrace 209 for the second electrode 21, and the nitride structure of the second embodiment will be described. Referring to FIG. The nitrogen-emitting diode comprises a substrate 200, an N-doped layer 202, an active layer 4, an electron barrier layer 205, a P-doped layer 206, and a first electrode 210. The N-type doped layer 2〇2 is located on one side of the substrate 2〇〇. The layer 2〇4 is located on the N-type impurity layer 2〇2, which includes at least the ΡΪ layer of the sub-well structure 5 The barrier layer 2G4a and the quantum well 2〇4b°P-type doped layer 206 between the quantum resistors 204 are located between the active layers, and the barrier layer is 2〇5 In the doped layer 206 and the active layer 20曰4, the H-glass electronic barrier layer 2G5 is a superlattice barrier layer including a quaternary nitride, and the energy gap is higher than the quantum barrier layer. The energy of the class A can be located on the P-doped layer 206. The second electrode 21A is also disposed on the platform 209 exposed by the impurity layer 202 or on the substrate 200 layer 202. In addition, the buffer layer 2 〇1 is located between the substrate 200 and the N-type doped layer 2〇4, the stress relaxation layer 203 is located between the N-type doped layer 202 and the active one, and the P-type contact layer 207 is located at the P-type doped layer 206 and the first Between poles 208. The main ride of the quantum well structure is taken as an example to illustrate Φ: The invention is not limited to this. 2C and 2D are schematic views showing the structure of the second embodiment as a multiple quantum well structure. 21 201103163 P51970143TW 29729twf.doc/n Third Embodiment FIG. 3A is a schematic cross-sectional view showing a nitride semiconductor light-emitting diode element according to a third embodiment of the present invention. In the first and second embodiments, the quantum barrier layer and the electron barrier layer are respectively described as a superlattice structure including a quaternary nitride, and the invention is not limited thereto. It is well known to those skilled in the art that the quantum barrier layer and the electron barrier layer can also have a quaternary nitrided, lattice structure as required by the process, as shown in the third embodiment. The left side of FIG. 3A is an energy band distribution diagram of the quantum barrier layer 304a. Since the quantum barrier layer 3〇4& is a superlattice structure formed by at least two material layers having a periodic layer, one of the materials is four. The meta-nitride, so its band diagram changes periodically. The right side of FIG. 3a is an energy band distribution diagram of the electron barrier layer 305. Since the electron barrier layer is a superlattice structure formed by periodically stacking at least two material layers, one of the materials is a quaternary nitride, It can change in cycles. The materials and forming methods of the layers of the third embodiment are the same as those of the first and second embodiments. The nitride of the third embodiment and the structure of the conductor light-emitting diode elements will be described. 3A and 3B, the nitride semiconductor light-emitting diode device of the present invention comprises a substrate 300, an N-type doped layer 302, an active layer 3〇4, an electron barrier layer 305, a P-type doped layer 306, and an electrode. 308 and the second electrode 31〇. The N-type doped layer 3〇2 is located on one side of the substrate. The active layer 304 is located on the N-type doped layer 302, which is packaged. The neutron well structure 'quantum well structure includes a second quantum barrier layer 304a and a quantum well 304b between the quantum barrier layers 304a. Quantum Barrier 22 201103163 P51970143TW 29729twf.doc/n Layer l〇4a is a superlattice structure comprising a quaternary nitride. Located on the active floor. The electron barrier layer is between 3. 5 and the active layer, wherein the electron barrier layer 305 is a super-lattice structure of a quaternary nitride, and the electron barrier layer 3Q5 is at ΓΤ:. The first electrode 308 is located in the p-doped layer 306. The second electrode 3HM is exposed to the (four) doped layer 3〇2 or is located on the other side of the substrate. In addition, the buffer layer is located between the plate 300 and the N-type doped layer 302, and the 雍a, the soil doped layer 302, and the active layer 304 are located between the _, and the 日 type The contact layer 307 is located between the p-doped layer 306 and the first electrode 3〇8. Figure 3 is a schematic diagram of the structure of the reset sub-well with a single-quantum well crust active layer. In summary, the quantum barrier layer of the present invention includes a quaternary nitride which can help release the stress of the active layer, and thus can effectively suppress: the effect of 'improving the crystal quality of the subsequent growth of the quantum well, and reducing = energy gap Poor (G.2~2 eV) to increase the carrier barrier and improve the probability of the combination of the electric g hole and the internal wire extraction efficiency. In addition, the electron barrier layer of the present invention includes another quaternary nitride = lattice structure to prevent crystal defects caused by lattice mismatch between the quantum barrier layer and the electron barrier layer, such as Fairy and caves, etc. Furthermore, the quantum barrier barrier layer comprising the quaternary nitride of the present invention may exist separately or simultaneously at the same time as the recording process, and the quantum barrier layer, the quantum well and the electronic resistance chamber of the present invention are 201103163 29729twf.doc/n In the middle, the cost reduction and the reduction of manufacturing hair: Ben: ff has been disclosed in the above example, however; = = the field of the general knowledge in the field of technology, without leaving the day 2, when you can make some changes Retouching, so the warranty of this I month is as defined in the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The tomb is a schematic cross-sectional view of a nitride half-wit-pole element according to the first embodiment of the present invention, and the left side is a monthly b-band distribution map of the quantum barrier layer. A schematic cross-sectional view of an energy element of a further nitride layer according to a first embodiment of the present invention, wherein the left side is a quantum barrier, and the further nitride 1 is 4 according to the first embodiment of the present invention. A schematic cross-sectional view of the first diode element, the energy band distribution diagram of the left layer. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1D is a schematic cross-sectional view of a conductor light-emitting diode element according to a first embodiment of the present invention, the left side of which: the amount = the energy band distribution of the layer. 。 丨 丨 图 图 图 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意 示意Another nitride 24 201103163 P51970143TW 29729twf.doc/n The band diagram of the schematic layer-to-face layer of the barrier semiconductor light-emitting diode component. 2C is a schematic (four) diagram of a semiconductor light-emitting diode element according to a second embodiment of the present invention, showing the energy band distribution of the right (four) electrical layer. 2D is a schematic sword view of a re-semiconductor LED device according to a second embodiment of the present invention, the right side of which is the energy band distribution of the object layer. FIG. 3A is a schematic diagram of a conductor light-emitting two-component element according to a third embodiment of the present invention: a distribution map, and the right side of the electron barrier layer is: The barrier layer is another one according to the third embodiment of the present invention. A schematic plan view of a photodiode element, the left side of which is a two-knife pattern of the quantity of the object layer, and the right side of which is a schematic sectional view of the barrier element, the left side of which is the quantity ίIn knife, and the right side thereof is The energy band distribution of the electron barrier layer is a semi-conductor: the energy band distribution map of the vaporization layer of the re-birth-first diode element depicted in the third embodiment of the invention, and its right side; 201103163 P51970143TW 29729twf.doc/n [Description of main component symbols] 100, 200, 300: substrate 101, 201, 301: buffer layer 102, 202, 302: N-type doping layer 103, 203, 303: stress relaxation layer 104 204, 304: active layers 104a, 204a, 304a: quantum barrier layers 104b, 204b, 304b: quantum wells 105, 205, 305: electron barrier layers 106, 206, 306: P-type doped layers 107, 207, 307 : P type contact layer 108 , 208 , 308 : first electrode 109 , 209 , 309 : platform 110 , 210 , 310 : second electrode 26

Claims (1)

201103163 P51.970143TW 29729twf.doc/n VII. Application for Patent Park: 1. A nitride semiconductor light-emitting diode component comprising: a substrate; an N-type doped layer on one side of the substrate; An active layer on the N-type doped layer, comprising at least one quantum well structure, wherein the quantum well structure comprises a second quantum barrier layer and a quantum well between the i sub-block layers The quantum barrier layer is a superlattice structure including a quaternary nitride; a P-type doped layer on the active layer; a first electrode on the P-type doped layer; and a second electrode On a platform exposed by the N-type doped layer, the crucible is located on the other side of the substrate. The nitride semiconductor light-emitting diode element according to claim 1, wherein the material of the quaternary nitride comprises AIJnbGai-a-bN, and a and b are respectively between 〇 and 1, and a + b&lt;1. 3. The nitride semiconductor light-emitting diode element according to claim 2, wherein the superlattice structure is formed by laminating an AlJiibGa^bN layer and an AlcIndGai cdN layer, and an AlJribGa^bN layer having a period of ^^. And the ineGai eN layer, the periodically layered layer and the GaN layer, or the periodically stacked A1JnbGaiabN layer, the layer and the GaN layer, wherein c, d, and e are respectively 〇 and /, = c + d &lt; l, and a is not equal to ¢, b is not equal to d. 4. The nitride semiconductor light-emitting diode element according to claim 3, wherein the number of times of the period of the superlattice structure is ^ to 27 201103163 P5I970 丨 43TW 29729twf.doc/n. 5. The nitride semiconductor light-emitting diode element according to claim 3, wherein the thickness of each layer in the superlattice structure is between Μ nm and 50 nm. The nitride semiconductor of claim 1 is a bipolar element, wherein the material of the well includes or AlnGapIni N, f, n, p are respectively between 〇 and ! Between the <br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> One pole mooncake piece' wherein the active layer has a thickness of between 3. - a nitride semiconductor light-emitting body element according to Item 1 of the present invention, wherein the tissue dynamic layer comprises a single-quantity two-zone nitriding-light-emitting group 7L#, wherein the active layer Including a plurality of nitrides of the quantum-polarity= Scope=Scope 1th, wherein the material of the substrate comprises a sapphire m-pole 2: a nitride according to the first item of the claim 2 The semiconductor light-emitting diode 2::, the material of the medium-doped layer includes the doped iridium or yttrium. 13. The nitride semiconductor light-emitting device according to claim 1, wherein the semiconductor device emits light, and the semiconductor device emits light. The material of the p-type doped layer includes magnesium doped or GaN. 14. The nitride semiconductor hair-emitting diode component of claim 1 further comprising a two-two buffer layer on the substrate and the N-type doped layer. 15. The nitride semiconductor light-emitting diode element according to claim 14, wherein the material of the buffer layer comprises AlqGai_qN, SiC, Zn〇, ZnTeO or MgN, wherein q is between &amp; . The nitride semiconductor light-emitting diode element according to claim 1, further comprising the N-type doped layer and the active reed-stress relaxation layer.曰~ 3 17. The nitride semiconductor element according to claim 16, wherein the material of the stress relaxation layer comprises a layered structure composed of a layer of GaN and a layer of GaN, wherein m is between 〇〇ι The inter-disc 〇 ~ bipolar range item 1 of the nitride semiconductor luminescent body read 'more includes the ~ P-type contact layer located in the PM_ layer. $• Binary: The nitride semiconductor light-emitting barrier layer described in the first paragraph of the application. a nitride semiconductor light emitting diode device between the P-type doped layer and the active layer, comprising: a substrate; 29 201103163 P51970143TW 29729twf.doc/„ an N-type doped layer on the substrate On one side; an active layer, located on the N-type doped layer, comprising a well structure, wherein the quantum well is separated by a quantity between the quantum barrier layers and an early layer of the p-type a hetero layer on the active layer. wherein ======_, and the 2 resistance: the energy gap of the layer is higher than the energy of the quantum barrier layer, and an electrode is located on the p-type doped layer And a second electrode located on the other side of the substrate, on a platform that exits or 21. The photodiode element of the second aspect of the patent application, wherein the four The nitride semiconductor emits A1 Τη Ο human 兀* nitride; fcf A i , g , h Ο ^ , ^ 22. as patent application van g h &lt; l optical diode element, wherein the trick: kg: nitride Semiconductor AigKGai_g_hN layer and Aliln" Gm# are stacked by two InhGa, g_hN layer and InkGai kN layer, week The second-stage laminated layer is composed of a GaN layer or a Α1 θ \ AIgKGai_g.hN layer and a GaN layer, which is composed of g 2 = layer, InkGai.kN is small 1, and g is not equal to Bu 2: Do not ;to. Between 丨 and 丨 23. For example, in the 22nd item of the patent application, the photodiode element, wherein the superlattice and the compound semiconductor are emitted at least twice. The number of times of the layer stacking is 30 201103163 P51970143TW 29729 twf.doc/n 24. The nitride semiconductor light emitting diode element according to claim 22, wherein the thickness of each layer in the superlattice structure is between Between 0.5 nm and 50 nm. 25. The nitride semiconductor light-emitting diode element according to claim 20, wherein the material of the quantum well comprises InfGauN or AlnGapIrii-n-pN, and f, η, p are between 0 and 1, respectively. And η + ρ &lt; 1. 26. The nitride semiconductor light-emitting diode component of claim 20, wherein the quantum well has a thickness between 1 nm and 20 nm. 27. The nitride semiconductor light-emitting diode component of claim 20, wherein the active layer has a thickness between 3 nm and 500 nm. 28. The nitride semiconductor light-emitting diode component of claim 20, wherein the active layer comprises a single quantum well structure. 29. The nitride semiconductor light-emitting diode component of claim 20, wherein the active layer comprises a plurality of the quantum well structures. The nitride semiconductor light-emitting diode element according to claim 20, wherein the material of the substrate comprises sapphire, ruthenium, SiC, ZnO or GaN. The nitride semiconductor light-emitting diode element according to claim 20, wherein the material of the N-type doped layer comprises erbium-doped or erbium-doped GaN. The nitride semiconductor light-emitting diode element according to claim 20, wherein the material of the P-type doped layer comprises 31 29729 twf.doc/n 201103163 GaN doped with magnesium or zinc. 33. The nitride semiconductor light-emitting diode device of claim 20, further comprising a buffer layer between the substrate and the N-type doped layer. 34. The nitride semiconductor light-emitting diode element according to claim 33, wherein the material of the buffer layer comprises GaN AlqGa丨_qN, SiC, ZnO, ZnTeO or MgN, wherein q is between 〇盥l between. The nitride semiconductor light-emitting diode element as described in claim 2, further comprising a stress relief layer located on the Ν-type doped layer and the enchantment sound. A B 糸-2 is a nitride semiconductor according to claim 35, wherein the material of the stress relaxation layer comprises a laminated structure composed of a secret layer, wherein m is between _ light: The nitride semiconductor according to claim 20, further comprising a P-type contact layer between the p-type doped layer and the first electrode. A nitride semiconductor light-emitting diode element comprising: a substrate; a second N-type doped layer 'on the side of the substrate; a well structure U==-type doped layer' At least one quantum well, the germanium structure includes a "quantum barrier" between the two quantum barrier phases and the green, each of the quantum barrier layers including a 32 201103163 rjiy^i43TW 29729twidoc/n first quaternary nitride - a super-crystalline germanium structure; a P-type doped layer on the active sound. An electron barrier layer, wherein the electron-transferring layer is included between the layer and the layer of the wire ... 2: = &amp; The quantum resistance = 4 = type doped layer, and the other electrode is located on the other side of the substrate. A. On the platform of the exposed road, another 39. For example, the 38th optical diode component of the patent application, the nitride semiconductor splash described in 1, the ΤηΓ χτ 八 — - quaternary nitride material package A1JnbGai.bN , a, b are between 〇 and i, respectively; and 2;; Zhao 40. For example, the 39th photodiode component of the patent application, 1 the Chinese compound of the henry, the AlaInbGa, bN ^ ^ Δ1Τ π C and 1-^ layer, periodic sound blast 66 a nb ai_a_bN layer and ineGai eN layer, period ^ and μ layer and (four) layer, or the circumference of the stack of gambling composition 'where c, d, e respectively; And = c &lt; 1, and a is not equal to c, b is not equal to d. Light: body: the nitride semiconductor number of the item a is the middle material - the super-lattice structure of the period of the cascade 42. The photodiode element described in the fourth aspect of the patent application, wherein the (four) first-superlattice structure is between nm5 nm and 50 nm. The thickness of the day is 33 201103163 r^iy/ui/fjjW 29729twf The nitride semiconductor light-emitting diode element of claim 38, wherein the material of the second quaternary nitride comprises Al 。 。 。 。 。 。 The superlattice structure consists of a periodic layer of AlgInhGai_g-hN layer and AliInjGaH-jN layer, a periodically laminated AlglrihGahg.hN layer and an InkGa^kN layer, a periodically stacked AlgliihGa^g-hN layer and a GaN layer, or a periodically stacked AlgInhGaLg. -hN layer, InkGa^N layer and GaN layer, wherein i, j, k are between 0 and 1, respectively, i + j &lt; l, and g is not equal to i, h is not equal to j. 45. The nitride semiconductor light-emitting diode element described in claim 44, wherein the number of times of the periodic layer of the second superlattice structure is at least twice. 46. The nitrogen according to claim 44 a semiconductor light emitting diode device, wherein each of the second superlattice structures has a thickness between 0.5 nm and 50 nm. 47. The nitride semiconductor light emitting diode according to claim 38 Element ^ wherein the material of the f subwell includes IiifGa^fN or AlnGapIrii.n-pN, respectively, f, η, p Between 0 and 1, and η + ρ &lt; 1. 48. The nitride semiconductor light-emitting diode element according to claim 38, wherein the quantum well has a thickness between 1 nm and 20 nm . 49. The nitride semiconductor light-emitting diode component of claim 38, wherein the active layer has a thickness between 3 nm and 500 nm 34 201103163 a / ui43TW 29729 twf.doc/n. 50. The nitride semiconductor diode element of claim 38, wherein the active layer comprises a single-quantum well structure. * 51. The nitride photodiode 7G member according to claim 38, wherein the active layer comprises a plurality of the quantum wells* 52. The nitride according to claim 38 A body 7L member, wherein the material of the substrate comprises sapphire, yttrium, yttrium ZnO or GaN. , 1L, The nitride semiconductor light-emitting diode element of claim 38, wherein the material of the N-type doped layer comprises erbium-doped GaN. GaN 54. The nitride semiconductor photodiode device of claim 38, wherein the material of the P-type doping layer comprises magnesium doping or the wording is as described in the patent application 帛38帛The nitride semiconductor light-emitting diode element further includes a buffer layer located on the substrate and the N-type doped layer. The nitride semiconductor light-emitting diode element according to claim 55, wherein the material of the buffer layer comprises ΛAlqGa^qN, SiC, ΖηΟ, ZnTeO or MgN, wherein q is between the trays 1 between. 57. The argon semiconductor semiconductor photodiode element as described in claim 38, further comprising a stress relief layer located in the N-type doped layer and the active layer. 35 29729 twf.doc/n 201103163 x ^ Ly I \jl W 58. The nitride semiconductor light-emitting diode element according to claim 57, wherein the material of the stress relaxation layer comprises an InmGai_mN layer and a GaN layer A laminate structure in which m is between 0.01 and 0.3. 59. The nitride semiconductor light-emitting diode device of claim 38, further comprising a P-type contact layer between the P-type doped layer and the first electrode. 36