201102758 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種二氧化碳雷射應用於微結構的使用方法， 特別係關於一種將二氧化碳雷射應用於製造次100微米微結構的 使用方法。 【先前技術】 半導體科技日新月異的發展’提升了生活的品質及便利性， 以顯示器為例，傳統笨重的映像管顯示器已大幅被淘汰，取而代 之的疋fe薄短小的液晶或是電漿顯示器，但由於各種儀器設備越 做越小，越做越精細，其内部構件即亦需具備精巧實用的特色。 目前的電子元件微結構製作多以微機電系統為主，微機電系 統中包括整合積體電路光刻術、電化學電鑄技術及高分子成型技 術之微光刻電鑄模造（LIGA)製程，標準的UGA製程因其製程 成本问、程序複雜、時程長等缺點，故在產品製造的經濟效益上 存有改進的空間。 微結構製作方法或相關研究多以黃光微影或電鑄成型技術為 η如中華民國發明公開第200626490號、發明公開第2術42728 \專利白利用Η光微影製程定義所需圖案’再以電鑄成型方法製 備微=構。但此法程序過於繁雜且電鑄後之成品多半有毛邊存 2右要去除多餘毛邊則需另以機械式器具或純濕絲刻進一 , >又中華民國發明公開第200716770號專利揭露，，一種具 ^微結構的朗模造模仁的製作方法及玻賴造模仁” ，亦是利用 光微❸技術疋義所需圖案並使用關技術來製備光學玻璃元件 的微結構；然上述技術皆是針對功能上與便利«到局部改善之 201102758 效果。 此外’亦有利用模具來輔助微結構成型，如中華民國第583丨36 證書號發明專利即使用預先準備的微結構模具配合光硬化材料來 定義所需的微結構；又’中華民國發明公告第·741號專利則 使用線切割放電、放電加卫技術或研磨方式來製備鋼模，並使用 凸出的鋼杈結構來轉印所需圖案；然而，模具轉印方式須考量的 因素眾多，如材料特性、拔模角度、硬化時間或溫度變異，皆會 影響微結構成型完整性。 為解決上述拔模角度的問題，中華民國發明公開第200733丨82 號專利提出以一犧牲層配合濕蝕刻方式來解決某些模具轉印製程 的問題，但此法程序繁多、製程時間長、結構複雜，故其實用性 亦有考量空間存在；中華民國發明公告第1288862號專利則揭示 以黃光微影製程定義所需圖案結構，再以蝕刻方式來製備微結 構，此專利屬於一般黃光微影的曝光與圖案定義方法；又，中華 民國發明公告第1286265號專利提出光罩製造方法與圖案成形方 法，此法以傳統玻璃光罩形式定義圖案結構，再以光刻方法製作 微結構’並以濕蝕刻方式去除以光罩定義之感光材料，但其程序 繁多且實用性亦有考量空間存在；另外，中華民國發明公告第 1283231號專利則提出機械式加工製造微結構，此法採用真空吸盤 固定式片並以一壓力衝擊方式定義微結構，但其應用範圍十分有 限，僅適用於薄膜材料。 目前針對50 μιη以上的尺度進行微結構製作，大多採用短波 雷射，如：飛秒雷射（femtosecond laser)、準分子雷射微加工（excimer laser micromachining)、Nd-YAG laser等技術’這些技術皆具有價 201102758 格昂貴之使麟陷’且前述技術對於㈣材料之加卫，則有吸收 波長不匹配與加工效率不佳之技術瓶頸。 二氧化碳雷射具有低成本、高精確度、高製程速度及可大面 積製作之優點，目如廣泛應用於高分子材料與玻璃脆性材料加工 應用，但其最小加工尺度受聚焦光斑影響而被限制在 100-150 μηι，即使經由設定一氧化碳雷射脈衝模式進行加工或縮減輸出能 量等參數，仍無法改善被加工物特徵尺寸問題，且二氧化碳雷射 亦具有上述雷射技術對於非矽材料進行加工時，加工尺度受聚焦 光斑影響而易產生凸塊、裂紋與尺度過大之問題。 【發明說明】 本發明係提供一種二氧化碳雷射應用於微結構的使用方法， 可產生次100微米加工尺寸之微結構，係包括下列步驟： (1)放置金屬光罩：將一具有所欲圖案之金屬光罩緊密貼合 於一基板表面；及 (2 )二氧化碳雷射掃瞄：利用二氧化碳雷射光源進行區塊掃 瞄後，取下該金屬光罩以在該基板上形成所欲圖案。 其中’該步驟（1)中之金屬光罩對光源具有低吸收率，其上 並刻畫有不同設計之圖形，係選自包含下列群組之金屬材料：不 銹鋼、鉻、金、銀、銅、鋁、白金、鎳和钽；而該基板係一高分 子材料或一非石夕脆性材料，該高分子材料係選自包含下列群組之 材料χκ甲基丙烯酸曱自旨（p〇iymethyi Methacrylate，後稱ΡΜΜΑ )、 十 甲基夕氧燒（poly-dimethylsiloxane，PDMS)、塑膠材料、 同刀子纖維材料和橡膠，1亥非石浅性材料係選自包含下列群組之 201102758 材料：玻璃、石夕土、藍寶石晶圓和陶曼。 該步驟（2)中之二氧化碳雷射光源係單一雷射光束或多雷射 光束，且該二氧化碳雷射光源之掃瞄速度至少為20mm/sec。 為促進使用二氧化碳雷射時的散熱效果，本發明之二氧化碳 雷射應用於微結構的使用方法，在選用之基板材質係玻璃之非矽 脆性材料時，係可在水冷或是氣冷之環境下進行二氧化碳雷射， 而氣冷係可透過一惰性氣體進行，該惰性氣體係空氣、氮氣、氬 氣或氦氣。 B 由於二氧化碳雷射係一種低成本之雷射技術，係普遍使用於 高分子材料或是非矽脆性材料之加工，然當其搭配金屬光罩進行 使用時，藉由金屬光罩對可見光具有低吸收率及其具有高導熱率 之特點，可充分排除以往因為熱傳導效果不佳而導致的熱影響區 域破壞現象，並可有效的將二氧化碳雷射加工尺度逼近光波波長 範圍，並形成次100微米之微結構。 本發明提供了一種具有低成本、高精確度、高穩定性、大面 φ 積製作及加工快速優點的微結構製作方法，利用本發明所製造出 之微結構可克服以往製作微結構時容易發生產生凸塊或裂紋、基 材表面不平滑、容易產生粉塵和毛邊及尺度過大（大於200至300 微米）之缺點，且由於本發明同時適用於高分子材料及非矽脆性 材料，因此可廣泛應用於微流體元件、光學元件、半導體元件、 奈米薄膜元件及太陽能光電元件之製造。 【實施方式】 請參考第一圖，本發明之二氧化碳雷射應用於微結構的使用 201102758 方法’可產生次1GG微米加工尺寸之微結構，係包括下列步驟： (1) 放置金屬光罩：將一具有所欲圖案之金屬光罩（1)緊 密貼合於一基板（2)表面；及 ' (2) 二氧化碳雷射掃猫：利用二氧化碳雷射⑷光源進行 區塊掃晦後，取下該金屬光罩⑴以在該基板（2)上形成所欲 圖案。 其中，該步驟⑴中之金屬光罩⑴對二氧化碳雷射光源 φ具有低吸收率及高導熱率，其上並刻畫有不同設計之圖形，係選 自包含下列群組之金屬材料：不錄鋼、鉻、金、銀、銅、銘、白 金士鎳和！_ ’而絲板（2)係—高分子材料或—非碎脆性材料， 該高分子材料係選自包含下列群組之材料：pMMA、pDMs、塑膠 材料、高分子纖維材料和橡膠’該非矽脆性材料係選自包含下列 群組之材料：玻璃、矽土、藍寶石晶圓和陶曼。 "步驟（2)中之—氧化碳雷射光源係單-雷射光束或多雷射 光束，且該二氧化碳雷射光源之掃瞒速度至少為2〇咖/咖。 修為促進使t氧化碳雷射時的散熱效果，本發明之二氧化碳 田射應用於微結構的使用方法，在所選用之基板材質為玻璃之非 夕脆後材料時，係可在水冷或是氣冷之環境下進行二氧化碳雷射 严“冷係可透過一惰性氣體進行，該惰性氣體係空氣、氮 氣、氬氣或氦氣。 之二氧化碳雷射應用於微 以下即以實施例進一步說明本發明 結構的使用方法。 201102758 本實施例係將二氧化碳雷射光源使用於一 PMMA材質之基 板，並選用SUS-304型不銹鋼做為金屬光罩，其包括下列步驟： (1) 放置金屬光罩：將具有所欲圖案之SUS-304型不銹鋼金 屬光罩緊密貼合於該聚甲基丙烯酸甲酯材質之基板；及 (2) 二氧化碳雷射掃瞄：利用雷射能量為1.5W的二氧化碳 雷射光源針對該基板進行掃瞄，掃瞄速度為34.2mm/sec，完成後 即取下該金屬光罩以於該基板上形成所欲圖案。 請參考第二圖及第三圖，利用本實施例針對高分子材料基板 所製備的次微米微結構具有孔徑寬度小於100微米且約為50微 米、深度約為160微米的孔洞，孔洞之結構十分完整，該基板於 深度為0微米之表面相當平整，並無產生凸起之區塊，顯示其孔 洞邊緣亦無產生凸塊或是熱影響區，此係二氧化碳雷射高斯能量 分布約86%集中於中心位置，而利用金屬光罩可以有效反射或折 射雷射光源的特色’以區隔出需要進行雷射掃猫的區域’並錯由 該金屬光罩導出過多的熱源，降低雷射光源對熱影響區破壞的機 率，確實改善了現行技術的缺失，提升了加工時的精確度，以製 作出加工尺寸較小的微結構。 實施例二 本實施例係將二氧化碳雷射光源使用於一 Pyrex玻璃材質之 基板，並選用SUS-304型不銹鋼做為金屬光罩，其包括下列步驟： (1)放置金屬光罩：將具有所欲圖案之SUS-304型不銹鋼金 屬光罩緊密貼合於該Pyrex玻璃材質之基板；及 (2)二氧化碳雷射掃瞄：利用雷射能量為1.5W的二氧化碳 201102758 雷射光源針對該基板進行掃猫，掃嘴 即取下該金屬光罩以在該基板上形戍 速度為 34_2mm/see， 所欲圖案。 完成後 因為玻璃基材之熔點溫度較高， 马提升使用二氣化碳雷射光 源時的熱傳導效果，本實施例施行眩. ^ ^ ’係搭配水冷或氣冷的方式 藉由氣體或水的對流或傳導來輔助排除雷射能 冷係透過一惰性氣體進行，該惰性氣 *'' 广 '粒係二氣、氮氣、氬氣或氦 氣。201102758 VI. Description of the Invention: [Technical Field] The present invention relates to a method of using a carbon dioxide laser to a microstructure, and more particularly to a method of using a carbon dioxide laser for manufacturing a sub-100 micron microstructure. [Prior Art] The ever-changing development of semiconductor technology has improved the quality and convenience of life. With the display as an example, the traditional bulky image tube display has been largely eliminated. Instead, it is a thin liquid crystal or plasma display. As the various instruments and equipment become smaller and smaller, the finer and more practical, the internal components need to have the characteristics of compact and practical. At present, micro-electromechanical systems are mainly used in the fabrication of electronic components, and micro-electromechanical systems include microlithography electroforming (LIGA) processes that integrate integrated circuit lithography, electrochemical electroforming, and polymer molding. The standard UGA process has room for improvement in the economic benefits of product manufacturing due to its shortcomings such as process cost, complicated procedures, and long time schedule. The micro-structure fabrication method or related research mostly uses yellow light lithography or electroforming technology as η. For example, the Republic of China Invention Disclosure No. 200626490, Invention Disclosure No. 2 42728 \Patent White uses the Twilight lithography process to define the desired pattern' The casting method prepares micro = structure. However, this method is too complicated and most of the finished products after electroforming have burrs. 2 To remove excess burrs, it is necessary to engrave them with mechanical instruments or pure wet wires. > Also, the Republic of China Invention and Publication No. 200716770 discloses, A method for fabricating a stencil mold with a micro-structure and a Boli model, is also a micro-structure for preparing an optical glass element by using a light micro-twisting technique to define a desired pattern and using a technique; It is aimed at the function and convenience «to the local improvement of the 201102758 effect. In addition, there are also the use of molds to assist in the formation of microstructures, such as the Republic of China No. 583丨36 certificate number invention patent using the pre-prepared microstructure mold with light hardening material Defining the required microstructure; 'The Republic of China Invention Announcement No. 741 patent uses wire-cut discharge, discharge-assisting technology or grinding method to prepare the steel mold, and uses the convex steel truss structure to transfer the desired pattern. However, there are many factors to be considered in the mold transfer method, such as material characteristics, draft angle, hardening time or temperature variation, which will affect the microstructure molding. In order to solve the above problem of the draft angle, the Republic of China Invention No. 200733丨82 proposes to solve the problem of some mold transfer processes by using a sacrificial layer and wet etching method, but this method has many procedures and process time. Long, complex structure, so its practicality also considers the existence of space; the Republic of China invention announcement No. 1280862 discloses the definition of the desired pattern structure by the yellow light lithography process, and then prepares the microstructure by etching. This patent belongs to the general yellow lithography. Exposure and pattern definition method; in addition, the Republic of China Invention Publication No. 1826265 patent proposes a mask manufacturing method and a pattern forming method, which defines a pattern structure in the form of a conventional glass mask, and then fabricates a microstructure by photolithography. The wet etching method removes the photosensitive material defined by the photomask, but the procedure is numerous and practical, and the space is considered. In addition, the Patent No. 1283231 of the Republic of China Invention Proposal proposes a mechanical processing to manufacture a microstructure, which is fixed by a vacuum chuck. The film is defined by a pressure shock, but its application range is ten. Limited, only for thin film materials. Currently, microstructural fabrication is performed on scales above 50 μm, mostly using short-wave lasers such as femtosecond laser, excimer laser micromachining, Nd -YAG laser and other technologies 'all of these technologies have a price of 201,102,758, which is expensive, and the aforementioned technology for (4) material reinforcement, there are technical bottlenecks that absorb wavelength mismatch and poor processing efficiency. Carbon dioxide laser has low cost, High precision, high process speed and large-area manufacturing advantages, such as wide application in polymer materials and glass brittle materials processing applications, but the minimum processing scale is limited by the focus spot is limited to 100-150 μηι, even via Setting the carbon monoxide laser pulse mode to process or reduce the output energy and other parameters still can not improve the feature size of the workpiece, and the carbon dioxide laser also has the above laser technology. When the non-tantalum material is processed, the processing scale is affected by the focused spot. It is prone to problems such as bumps, cracks and excessive scale. [Description of the Invention] The present invention provides a method for applying a carbon dioxide laser to a microstructure, which can produce a microstructure of a sub-100 micron processing size, and includes the following steps: (1) placing a metal mask: a desired pattern The metal reticle is closely attached to a substrate surface; and (2) carbon dioxide laser scanning: after scanning the block with a carbon dioxide laser source, the metal reticle is removed to form a desired pattern on the substrate. Wherein the metal reticle in the step (1) has a low absorptance to the light source, and is patterned with different designs, selected from the group consisting of metal materials of the following groups: stainless steel, chrome, gold, silver, copper, Aluminum, platinum, nickel and ruthenium; and the substrate is a polymer material or a non-shixi brittle material selected from the group consisting of χκmethacrylic acid Me ( (p〇iymethyi Methacrylate, After the ΡΜΜΑ), poly-dimethylsiloxane (PDMS), plastic materials, the same knife fiber material and rubber, 1 hai non-stone shallow material is selected from the following groups of 201102758 materials: glass, stone Xi Tu, sapphire wafers and Tauman. The carbon dioxide laser source in the step (2) is a single laser beam or multiple laser beams, and the carbon dioxide laser source has a scanning speed of at least 20 mm/sec. In order to promote the heat dissipation effect when using carbon dioxide laser, the carbon dioxide laser of the present invention is applied to the use of the microstructure, and when the substrate material selected is a non-brittle material of glass, it can be in a water-cooled or air-cooled environment. A carbon dioxide laser is performed, and the air cooling system is carried out through an inert gas system of air, nitrogen, argon or helium. B. Because carbon dioxide laser is a low-cost laser technology, it is commonly used in the processing of polymer materials or non-cracking materials. However, when used with metal masks, it has low absorption of visible light by metal masks. The rate and its high thermal conductivity can completely eliminate the damage caused by the heat-affected area caused by the poor heat conduction effect, and can effectively approximate the carbon dioxide laser processing scale to the wavelength range of the light wave, and form a micro-micron micrometer. structure. The invention provides a microstructure manufacturing method with the advantages of low cost, high precision, high stability, large surface φ product fabrication and rapid processing, and the microstructure manufactured by the invention can overcome the problem that the micro structure is easy to be produced in the past. It has the disadvantages of bumps or cracks, uneven surface of the substrate, easy generation of dust and burrs, and excessive size (greater than 200 to 300 microns), and can be widely applied because it is suitable for both polymer materials and non-cracking materials. Manufacture of microfluidic components, optical components, semiconductor components, nanofilm components, and solar photovoltaic components. [Embodiment] Referring to the first figure, the carbon dioxide laser of the present invention is applied to the use of microstructures 201102758. The method of generating a microstructure of a sub-1 GG micrometer size includes the following steps: (1) placing a metal mask: A metal mask (1) having a desired pattern fits snugly to the surface of a substrate (2); and ' (2) a carbon dioxide laser sweeping cat: after performing a block broom using a carbon dioxide laser (4) light source, remove the The metal mask (1) is formed on the substrate (2) in a desired pattern. Wherein, the metal reticle (1) in the step (1) has a low absorption rate and a high thermal conductivity to the carbon dioxide laser light source φ, and is patterned with different designs, and is selected from the metal materials including the following groups: no steel recording , chrome, gold, silver, copper, Ming, Platinum Nickel and! _ ' and silk plate (2) - polymer material or - non-brittle material, the polymer material is selected from the group consisting of: pMMA, pDMs, plastic materials, polymer fiber materials and rubber 'this non-矽The brittle material is selected from the group consisting of glass, alumina, sapphire wafers and Tauman. "Step (2)—The carbon oxide laser source is a single-laser beam or multiple laser beams, and the carbon dioxide laser source has a broom speed of at least 2 〇 coffee/coffee. In order to promote the heat dissipation effect when the carbon monoxide is irradiated, the carbon dioxide field of the present invention is applied to the use of the microstructure, and when the selected substrate is made of glass, the material can be water-cooled or Carbon dioxide laser is strictly carried out in an air-cooled environment. "The cold system can be carried out through an inert gas, such as air, nitrogen, argon or helium. The carbon dioxide laser is applied below the micro, and the present invention is further illustrated by the embodiment. 201102758 In this embodiment, a carbon dioxide laser light source is used for a PMMA substrate, and SUS-304 stainless steel is used as a metal mask, which includes the following steps: (1) placing a metal mask: SUS-304 stainless steel metal reticle with desired pattern is closely attached to the substrate of polymethyl methacrylate; and (2) carbon dioxide laser scanning: using a carbon dioxide laser source with a laser energy of 1.5W Scanning the substrate, the scanning speed is 34.2 mm/sec, and after completion, the metal mask is removed to form a desired pattern on the substrate. Please refer to the second figure and the In the three figures, the submicron microstructure prepared for the polymer material substrate of the embodiment has a hole having a pore width of less than 100 μm and a diameter of about 50 μm and a depth of about 160 μm. The structure of the hole is very complete, and the substrate is at a depth of The surface of 0 micron is quite flat, and there is no block with protrusions, which shows that there is no bump or heat affected zone at the edge of the hole. This is a carbon dioxide laser Gaussian energy distribution about 86% concentrated in the center position, and the use of metal The reticle can effectively reflect or refract the characteristics of the laser source to distinguish the area where the laser sweeps the cat is needed, and the excess heat source is derived from the metal reticle to reduce the probability of the laser source damaging the heat affected zone. It has indeed improved the lack of the current technology, and improved the precision during processing to produce a microstructure with a small processing size. Embodiment 2 This embodiment uses a carbon dioxide laser light source for a Pyrex glass substrate and selects SUS-304 stainless steel is used as a metal mask, which includes the following steps: (1) Place a metal mask: SUS-304 stainless steel with the desired pattern a photomask closely attached to the Pyrex glass substrate; and (2) carbon dioxide laser scanning: using a laser energy of 1.5W with a laser energy of 201,102,758, a laser source to sweep the cat, the nozzle is removed The metal reticle has a shape of 34_2 mm/see on the substrate, and the desired pattern is obtained. After the completion, since the melting temperature of the glass substrate is high, the heat transfer effect when the horse is lifted using the two-gas carbon laser light source, the embodiment The implementation of glare. ^ ^ ' is coupled with water cooling or air cooling by means of gas or water convection or conduction to assist in the elimination of laser energy through the cold gas through an inert gas, the inert gas * '' wide 'granular two gas, Nitrogen, argon or helium.
請參考第四圖及第五圖’利用本訾 的次微米微結構具有孔徑小於 微水且約為SO微米、深度約為 50微米的孔洞，該孔洞之結構完整且矣 衣曲洛淨無凸塊產生，大幅 改善先前技術容易造成毛邊、凸塊、裂奸+ 製紋或是雷射尺寸過大的缺 點’由本實施例亦可說明本發明之方法施用於非賴性材料時， 並不會在孔洞周@產生裂紋或凸塊’亦可進行幻⑽微米之微結 構加工，亦即對於非㈣性材料的微結構進行力口工時，仍具有高 精密度的特性，是一種十分優越的微結構加工方法。 請參考第六圖及附件-，係在大氣下❹二氧化碳雷射光源 針對Pyrex玻璃之非矽脆性材料進行微結構加工結果，加工時使 用的二氧化碳雷射光源能量為mw ’操作速度為34 2mm/sec，切 割次數為10次，由圖中可看出，在大氣下使用二氧化碳雷射針對 非矽脆性材料進行加工時，會在孔徑邊緣兩側產生明顯裂紋、凸 塊及燒焦現象，且所產生孔從的大小為光斑尺寸倍的250微 米大小，應是在雷射光刻過程中能量過度集中在光刻處，使得熱 量無法有效釋出’造成加工區域與非加工區域間溫度梯度過高， 而產生熱裂與燒焦現象。而凸塊的產生主要是由於已熔融材料喷 201102758 ==Γ移除，故沿著光刻邊緣產生再凝固堆積的結果， 致出有些凸塊高度達18.121微米’凸塊過高將導 後：“之困擾，·另外在某些情況下，甚至還會發生錢開的現 ，就尺度上而言，被加工物的特徵形貌與尺寸會遠比聚隹 先斑大，係因雷射光源所提供的熱量會瞬間將I作物局部炫化或 π化，錢被加王㈣魏尺寸遠大於聚焦光斑，此料能擴散 與傳導因素將會在工件的特徵尺寸周圍會形成所謂的熱影響區 域’亚何生應力殘留、熔料積、微㈣與材料變質之問題，間 接增加後續製程困難度與可行性。 :上述實施例可知，本發明係利用成本較低的二氧化碳雷射 針對南分子材料或非賴性㈣進行微結構加卫，改善了以往微 結構製程中容易造成雷射加工附近的區域產生 ㈣象，並糊以烟、至次刚《，可提升製作^ 構¥的精確度，並將其廣泛助於各種半導體元件、光學元件或 微流體元件的製作。 【圖式簡單說明】 第一圖本發明二氧化碳雷射應用於微結構的使用方法流程 圖0 第二圖係實施例一之微結構顯微形貌圖。 第三圖係實施例一之微結構寬度及深度關係圖。 第四圖係實施例二之微結構顯微形貌圖。 第五圖係實施例二之微結構寬度及深度關係圖。 第六圖係在大氣下施行二氧化碳雷射微結構加工之微結構寬 度及深度關係圖。 201102758 【主要元件符號說明】 1金屬光罩 2基板 A二氧化碳雷射 【附件說明】 附件一係在大氣下施行二氧化碳雷射微結構加工之顯微形貌Please refer to the fourth and fifth figures. 'Using the submicron microstructure of this crucible has a hole with a pore diameter smaller than that of micro water and about SO micron and a depth of about 50 micrometer. The structure of the hole is complete and the structure is intact. Block generation, greatly improving the shortcomings of the prior art which are liable to cause burrs, bumps, cracks, ridges, or excessively large lasers. This embodiment also shows that the method of the present invention is applied to non-reactive materials. The hole circumference @creating cracks or bumps' can also be processed by the magical (10) micron microstructure, that is, the high-precision characteristics of the microstructure of the non-four-material material, which is a very superior micro Structural processing method. Please refer to the sixth figure and the attachment - for the microstructure processing of the non-brittle material of Pyrex glass under the atmosphere of carbon dioxide laser light source. The energy of the carbon dioxide laser source used in the processing is mw 'the operation speed is 34 2mm/ Sec, the number of cuts is 10, as can be seen from the figure, when using carbon dioxide laser in the atmosphere for non-cracking materials, it will produce obvious cracks, bumps and charring on both sides of the aperture edge. The size of the hole is 250 micron, which is the size of the spot size. It should be that the energy is excessively concentrated in the lithography process during the laser lithography process, so that the heat cannot be effectively released, causing the temperature gradient between the processed area and the non-processed area to be too high. The phenomenon of hot cracking and charring occurs. The bumps are mainly produced because the molten material spray 201102758 ==Γ is removed, so the result of re-solidification accumulation along the edge of the lithography results in some bump heights of 18.121 micrometers. "The troubles, · In addition, in some cases, even the money is opened. On the scale, the characteristic shape and size of the processed object will be much larger than the first spot, because of the laser source. The heat provided will instantly smear or π the I crop, and the money is added to the king. The size of the Wei is much larger than the focused spot. The diffusion and conduction factors of this material will form a so-called heat affected zone around the feature size of the workpiece. 'Anasheng stress residual, melt accumulation, micro (four) and material deterioration problems, indirectly increase the difficulty and feasibility of subsequent processes. The above examples show that the present invention uses low-cost carbon dioxide lasers for southern molecular materials. Or non-relaissance (4) Micro-structure enhancement, which improves the accuracy of the previous micro-structure process, which is easy to cause the area near the laser processing (4), and pastes the smoke, to the next time, which can improve the accuracy of the production structure. And it is widely used in the fabrication of various semiconductor components, optical components or microfluidic components. [Simplified description of the drawings] The first figure shows the flow chart of the application of the carbon dioxide laser of the present invention to the microstructures. A microstructure micrograph of the microstructure. The third diagram is the microstructure width and depth relationship of the first embodiment. The fourth diagram is the microstructure micrograph of the second embodiment. Microstructure width and depth relationship diagram. Figure 6 is a diagram showing the relationship between microstructure width and depth of carbon dioxide laser microstructure processing under the atmosphere. 201102758 [Main component symbol description] 1 metal mask 2 substrate A carbon dioxide laser [attachment] Explanation] Annex I is the microscopic morphology of carbon dioxide laser microstructure processing under atmospheric conditions.