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TW201100576A - Apparatus for depositing organic material and depositing method thereof - Google Patents

Apparatus for depositing organic material and depositing method thereof Download PDF

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Publication number
TW201100576A
TW201100576A TW099114032A TW99114032A TW201100576A TW 201100576 A TW201100576 A TW 201100576A TW 099114032 A TW099114032 A TW 099114032A TW 99114032 A TW99114032 A TW 99114032A TW 201100576 A TW201100576 A TW 201100576A
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Taiwan
Prior art keywords
substrate
deposition
organic material
chamber
region
Prior art date
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TW099114032A
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Chinese (zh)
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TWI452166B (en
Inventor
Jae-Wan Park
You-Min Cha
Won-Seok Cho
Jae-Mork Park
Jae-Hong Ahn
Min-Jeong Hwang
Tae-Wook Kim
Jong-Woo Lee
Tae-Seung Kim
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Samsung Mobile Display Co Ltd
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Publication of TW201100576A publication Critical patent/TW201100576A/en
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Publication of TWI452166B publication Critical patent/TWI452166B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An apparatus for depositing an organic material and a depositing method thereof, wherein a deposition process is performed with respect to a second substrate while transfer and alignment processes are performed with respect to a first substrate in a chamber, so that loss of an organic material wasted in the transfer and alignment processes can be reduced, thereby maximizing material efficiency and minimizing a processing tack time. The apparatus includes a chamber having an interior divided into a first substrate deposition area and a second substrate deposition area, an organic material deposition source transferred to within ones of the first and second substrate deposition areas to spray particles of an organic material onto respective ones of first and second substrates and a first transferring unit to rotate the organic material deposition source in a first direction from one of the first and second substrate deposition areas to an other of the first and second substrate deposition areas.

Description

201100576 六、發明說明: 【發明所屬之技術領域】 本發明之-態樣係關於一種用 及其沉積方法,其可杳在n 積有機材料之設備 丹』田在同一腔室中針 移及對準製程的同時,針對第二 人第-基板進行轉 伋進仃沉積製程。 【先前技術】 由於廣視角、出色對比度及快速 i 發光顯示裝置作為 %'速率特徵,有機 的中心。有機發光顯示裝置中所包括 4么眾注思 括彼此面對面之第一及第__ 為發光二極體包 及形成於琴等η 陽極電極及陰極電極) 成…電極之間的令間層。 層,例如電洞注入層、雷 層了I括多個 或電子注入層。在有機:一 “ S射層、電子傳輪層 由有機材料形成之有機薄膜。 4中間層為 【發明内容】 因此’ k供一種沉籍古 其中機材料之設備及其沉積方法, 同時:針對第二=對Γ基板進行轉移及對準製程的 準製程期間有機:科之以致在該轉移及該對 且使處理產距時間(帅· 使㈣效率最大 (P Cessing tack time)最短。 外,提供—種有機材料沉積李统,1比弁德 料沉積系統在同_ * m、比先則有機材 二間t配置更多處理室,該 201100576 沉積源移動以針對各別基板進行沉積之方向上配置,該方 向與沉積移動以沉積另一基板之方向不同,以致腔室尺寸 最佳且空間利用最大化。 根據本發明之一態樣,提供一種沉積設備,其包括具 有分成第-基板沉積區及第二基板沉積區之内部的腔室:、 轉移至忒第一及該第二基板沉積區中之一者中以將有機材 =粒子噴灑於第—及第二基板中之各別—者上的有機材料 ◎ ’儿積源、丨在第—方向上使該有機材料沉積源自第一及第 二基板沉積區中之—者旋轉至第—及第:基板沉積區中之 2-者的第一轉移單元。該沉積設備亦可包括使有機材料 儿積源在第-及第二基板沉積區中之一者中在第二方向上 彺復運動的第二轉移單元。沉積設備亦可包括位於第一基 板!積區中以使自外部轉移之第-基板對準的第一基板對 準早7G及位於第二基板沉積區中以使自該外部轉移之第二 基板對準的第二基板對準單元。 〇六第一基板沉積區及第二基板沉積區可在與該第一方向 第一方向上延伸。有機材料沉積源可為線性沉積 源。腔室之主體可為多角形容器,其相鄰於該第一轉移單 兀之第-側面較長於與該第一側面相對之第二側面。第一 及第—基板可經由將當夕贫- 土田胶至之第—側面進入及離開腔室。 ::本發明之另一態樣,提供一種沉積有機材料之方 二第一基板轉移至腔室之第一基板沉積&quot;且 :二: 行對準製程’在完成在第-基板上之對 丰氣私後將沉積源轉移至該第—基板沉積區中以在第一基 201100576 板上進行沉積製程,在進 g.收墙^ 進仃第一基板上之沉積製程的同 ”將第二基板轉移至該腔室之第二基板 轉移之第二基板上進行對準製程,當完成第—基板上t 積製程及第二基板上之 二=I板上之沉 早1程時,藉由使沉積源在第一 方向上㈣而將沉積源轉移至該第二基 積源轉移至第二基板沉積區 … 程。嗲隹弟一基板上進仃沉積製 程忒方法亦可包括將第三基 積區中且在針對第砂主腔至之第-基板沉 τ對第一基板進仃沉積製程的同時, 基板進行對準製程。 丨T乐二 根據本發明之又一態樣, 合忐笙一 A』 種6又備,其包括具有 基板沉積區、等待區及第二基板沉積區之内部的 腔至,位於該第一基板沉積區中 仰L_ r以使自外部轉移之 — 板對準的第一基板對準單元 土 从丄 茨弟一基板沉積區Φ丨、, 使自該外部轉移之第二基板對準的第二基板對準草元 少-個將有機材料粒子喷灑於該第一及該第二 者上的有機材料沉積源,及在第一方向上轉移: 沉積源之轉移單元。該設備亦可包括固持有機材料沉^ :沉積源固持單元及配置於沉積源固持單元之上部外= 的角度限制板。第-基板沉積區、等待 卜壁上 區可配置成在第一方向上延伸之—直線。弟-基板沉積 根據本發明之又一態樣,提 — ,,甘—4 + 仏種〉儿積有機材料之方 4 ,/、匕括在將第一基板自外部轉移至腔室之第— 積區中及在該第-基板進行對準製程的同時,將板沉 於該腔室之等待區中,纟完成針 ’儿積原复 丁對第基板之對準製 201100576 傻 稭由將位於腔室之等待區中的診 基板沉積區中而針對第一 人彳μ轉移至該第一 自外部轉移至第沉積製程,將第二基板 付秒芏弟—基板沉積區中及 準製程,在完成對第一基板之沉 2 :土板進行對 -基板沉積區轉移回腔室之等待區,二:沉積源自第 板之對準製程後,藉由將位於腔室之等待=料第二基 移至該第二基板沉積區甲而針對 板:的,儿積源轉 Ο ❹ 可在針對第一美柘基板進仃沉積製程。 r才第基板進仃沉積製程的同時針對第_ 對準製程。該方法亦可包括在完成第」基板進行 麦將第-基板自腔室之第—基板沉積區轉 三基板自外部轉移至腔室之第-基板沉積區中/將第 ,:本發明之又一態樣’提供—種沉積系統 複數個有機㈣沉積設備、通常連接該複 材= 料沉積設備,之A板的…^ 4移至插入有機材 預又備f之基板的裝载閘室,其中複數個 積设備包含第一有機材料沉積設備,其針、…儿 進行沉積製程且在對該至少兩個基板中之至少一::基= :製程:: 十對該至少兩個基板中之另—者進行轉移及= 製I複數個有機材料沉積設備可進一步包括依序針對單 個基板進行轉移製程、對準製程及沉積製 料沉積設備。 牟有機材 區及材料沉積設備可包括具有分成第-基板沉積 -及第一基板沉積區之内部的腔室、轉移至㈣一及該第 二基板沉積區中之一者中以將有機材料粒子噴灑於第二及 7 201100576 第一基板中之各別一者上的有機材料沉積源及在第一方向 上使該有機材料沉積源自第一及第二基板沉積區中之一者 旋轉至第一及第二基板沉積區中之另一者的轉移單元。該 腔至可為多角形容器,其相鄰於該第一轉移單元之第一側 面較長於在該第一側面對面之第二側面。第一及第二基板 可經由腔室之第二側面進入及離開腔室。 【實施方式】 本發明之更完整瞭解及其許多伴隨優點將顯而易見, 因為其參考以下實施方式且結合隨附圖式考慮而變得充分 瞭解,在該等圖式中類似參考符號指示相同或類似組件。 在以下詳細描述中,僅以說明之方式展示及描述本發 明之某些例示性具體實例。如熟習此項技術者將認識到, 所述具體實例可以各種不同方式修改,所有修改均不脫離 本發明之精神或範4。因&amp;,圖&lt;及描述之性質將視為說 明性的及非限制性的。另外,當元件稱為位於另一元件「上」 时,其可直接位於該另一元件上或利用一或多個插入其間 之插入元件間接位於該另一元件上…當元件稱為「連 接於」另一元件時,其可直接連接於該另一元件或利用一 或多個插入其間之插入元件間接連接於該另一元件。下 文,類似參考數字指類似元件。 由於廣視角、出色對比度及快速響應速率特徵,有機 發光顯示裝置作為下_代自發光顯示裝置已成為公幕注意 的中心。有機發光顯示裝置中所包括之有機發光二極體包 201100576 括彼此面對面之第一及第二電極(陽極電極及陰極電極) 及配置於該等電極之間的中間層。該中間層可包括多個 層,例如電洞注入層、電洞傳輸層、發射層、電子傳輸層 及/或電子注入層。在有機發光二極體元件中,該等中間層 為由有機材料製成之有機薄膜。201100576 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method and a method for depositing the same, which can be used in a device in which n organic materials are implanted in the same chamber. At the same time as the quasi-process, the second substrate-substrate is transferred to the germanium deposition process. [Prior Art] Due to the wide viewing angle, excellent contrast ratio, and fast i-light display device as the %' rate feature, the organic center. The organic light-emitting display device includes a first layer and a __ which are light-emitting diode packages and an inter-layer formed between the electrodes of the η anode electrode and the cathode electrode. Layers, such as a hole injection layer, a lightning layer, or a plurality of electron injection layers. In organic: an "S-shot layer, an electron-transporting layer formed of an organic film of organic material. 4 intermediate layer is [invention content] Therefore 'k for a kind of equipment and deposition method of the ancient Chinese machine material, at the same time: Second = during the quasi-preparation process of the transfer and alignment process of the germanium substrate: organically, the shift and the pair are made and the processing time is the shortest (P Cessing tack time). Providing an organic material depositing Li system, a 1 弁 料 沉积 deposition system in the same _ * m, than the first organic material two t configuration more processing chamber, the 201100576 deposition source moves to separate the direction of the substrate In the upper configuration, the direction is different from the direction in which the deposition moves to deposit another substrate, so that the chamber size is optimal and the space utilization is maximized. According to an aspect of the present invention, there is provided a deposition apparatus including having a division into a first substrate deposition a chamber inside the second substrate deposition region: transferred to one of the first and second substrate deposition regions to spray the organic material=particles into each of the first and second substrates The organic material on the other side ◎ 'child source, 丨 in the first direction to deposit the organic material from the first and second substrate deposition areas - rotate to the first and the: substrate deposition area a first transfer unit of 2-. The deposition apparatus may further include a second transfer unit that causes the organic material source to reciprocate in the second direction in one of the first and second substrate deposition regions. The apparatus can also include a second substrate pair located in the first substrate! accumulation region such that the first substrate aligned from the externally transferred first substrate is aligned 7G early and in the second substrate deposition region to be transferred from the external substrate a second substrate aligning unit. The first substrate deposition region and the second substrate deposition region may extend in a first direction with the first direction. The organic material deposition source may be a linear deposition source. The polygonal container is adjacent to the first side of the first transfer unit and is longer than the second side opposite to the first side. The first and the first substrate can be passed through the - side entry and exit chambers. :: another aspect of the invention In the aspect, a first substrate deposition of the first substrate on which the organic material is deposited is transferred to the chamber &quot; and: a second alignment alignment process is performed after the completion of the abundance on the first substrate Transferring to the first substrate deposition region to perform a deposition process on the first substrate 201100576, and transferring the second substrate to the chamber during the deposition process on the first substrate The alignment process is performed on the second substrate transferred by the second substrate, and when the deposition process on the first substrate and the first step on the second substrate on the second substrate are completed, the deposition source is in the first side. Transferring the deposition source to the second substrate source to the second substrate deposition region upwards (4). The method of depositing the substrate on the substrate may also include the third substrate region and The sand main cavity to the first substrate τ is applied to the first substrate, and the substrate is aligned. According to another aspect of the present invention, a composite device having a substrate deposition region, a waiting region, and a second substrate deposition region is disposed on the first substrate. The upper L_r of the deposition zone is such that the first substrate aligned with the externally-aligned plate is aligned with the unit soil from the substrate deposition area Φ丨, and the second substrate aligned from the external substrate is aligned The substrate is aligned with a few grasses - an organic material deposition source that sprays organic material particles onto the first and second ones, and transfers in a first direction: a transfer unit of the deposition source. The apparatus may also include a solid material holding device: a deposition source holding unit and an angle limiting plate disposed outside the upper portion of the deposition source holding unit. The first substrate deposition zone and the waiting wall upper region may be configured to extend in a first direction. Substrate-substrate deposition According to still another aspect of the present invention, the side of the organic material 4, /, is included in the first substrate to be transferred from the outside to the chamber - In the accumulation zone and at the same time as the alignment process of the first substrate, the plate is sunk in the waiting area of the chamber, and the 针 纟 儿 儿 复 复 201 201 201 201 201 201 201 201 201 201 201 201 201 201 201 In the diagnostic substrate deposition zone in the waiting area of the chamber, for the first person 彳μ transfer to the first external transfer to the deposition process, the second substrate is applied to the second-substrate-substrate deposition zone and the quasi-process, Finishing the sinking of the first substrate: the soil plate is transferred to the waiting region of the substrate deposition region, and second, after depositing the alignment process from the first plate, by waiting for the chamber to wait for the second The base is moved to the second substrate deposition zone A, and for the plate, the deposition process can be performed on the first substrate. The second substrate is processed for the first alignment process while the substrate is being deposited. The method may further include: transferring the first substrate to the first substrate from the chamber to the substrate deposition region, and transferring the three substrates from the outside to the first substrate deposition region of the chamber. a state of 'providing a deposition system, a plurality of organic (four) deposition equipment, usually connected to the composite material = material deposition equipment, the A plate of the ... ^ 4 moved to the loading lock chamber inserted into the substrate of the organic material pre-replacement, Wherein the plurality of accumulation devices comprise a first organic material deposition device, wherein the needle is, and the deposition process is performed on at least one of the at least two substrates:: base =: process:: ten of the at least two substrates Alternatively, the transfer and the I plurality of organic material deposition apparatuses may further include performing a transfer process, an alignment process, and a deposition material deposition apparatus sequentially for a single substrate. The 牟 organic material region and the material deposition apparatus may include a chamber having an inner portion divided into a first substrate deposition layer and a first substrate deposition region, transferred to one of the (four) one and the second substrate deposition region to remove the organic material particles Spraying an organic material deposition source on each of the second and seventh 201100576 first substrates and rotating the organic material from the first and second substrate deposition regions in a first direction to the first a transfer unit of the other of the first and second substrate deposition zones. The cavity may be a polygonal container having a first side adjacent the first transfer unit that is longer than a second side opposite the first side. The first and second substrates can enter and exit the chamber via the second side of the chamber. BRIEF DESCRIPTION OF THE DRAWINGS A more complete understanding of the present invention, as well as the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Component. In the following detailed description, some illustrative specific embodiments of the invention are shown and described It will be appreciated by those skilled in the art that the specific embodiments may be modified in various different ways, all without departing from the spirit or scope of the invention. The nature of &amp;, &lt;RTIgt;&lt;RTIID=0.0&gt;&gt;&gt; In addition, when an element is referred to as being "on" another element, it may be "directly on" the other element or the one or more intervening intervening elements are indirectly located on the other element. In the case of another element, it may be directly connected to the other element or indirectly connected to the other element by means of one or more intervening elements interposed therebetween. Hereinafter, like reference numerals refer to like elements. Due to the wide viewing angle, excellent contrast ratio, and fast response rate characteristics, the organic light-emitting display device has become the center of attention for the public screen as a lower-generation self-luminous display device. The organic light-emitting diode package included in the organic light-emitting display device 201100576 includes first and second electrodes (anode electrode and cathode electrode) facing each other and an intermediate layer disposed between the electrodes. The intermediate layer may include a plurality of layers such as a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and/or an electron injection layer. In the organic light emitting diode element, the intermediate layers are organic thin films made of an organic material.

在具有上述組態之有機發光二極體元件的製程製造 中,可經由沉積方法,使用沉積設備使有機薄膜及電極(2 括電洞注入層、電洞傳輸層、發射層、電子傳輸層、電子 注入層及其類似物)形成於基板上。 在沉積方法中,在將基板裝載至真空腔室中後,藉由 加熱欲沉積之含有有機材料的容器且接著使該容器中之有 機材料蒸發或昇華來形成薄膜。藉由在基板前面對準具有 斤需形狀之開口的遮蔽罩圖案且接著使有機材料蒸發或昇 華來使有機薄膜沉積於基板上。 在進行該沉積製程之前,必定進行將基板轉移至腔室 之製程、準確地將遮蔽罩對準基板之製程及其類似製 程。根據先前沉積設備;5古土 、 议立 備及方法,沉積製程不可能在基板轉 移及遮罩對準贺@ ^ iim / 行。此外,將基板轉移及遮罩對 間。 刀開。因此,可能會增加處理產距時 另外,根據先前沉藉^^ mm m ^ u 積°又備及方法,在基板轉移及遮罩 對準製程期間,有機材 义皁 可Π、, w 4持續自冰積源蒸發或昇華。因此, Τ %會浪費有機材料。 現參看圖 為不意性說明根據本發明之第一具體 9 201100576 實㈣用於沉積有機材料之設備組態的橫截面圖 卜根據本發明之該第-具體實例的該用於沉積有機材= 設備包括具有分成第一基板沉積區、等 :之 «之内部的腔室·位於該第—基板沉積區第中 第-基板u〇對準的第—基板對準單元2〇。,位於 基板沉積區中以使自該外部轉移之第:基板㈣對 準^二基板對準單元210,至少—個用於將該 子喷m於第一及第二基板110及11〇 钭粒 上之有機材料沉籍通 3〇〇,用於固持有機材料沉積源 ’、 元彻以及用於在第-方積源固持單 藉、序If!姓- ° (例如水平方向)上轉移該沉 積源固持早元之轉移單元。如圖U所說明,第一基板 ,儿積區、等待區及第:基板沉積區在該第—方向上配 一直線。 △此處,在腔室100中由真空系(圖中未示)維持真空 狀癌。在圖1之第一且體眘点丨丨. /rn . 八體實例中,兩個有機材料沉積源300 固持於沉積源固持單元彻中,且角度限制板川形成於 沉積源固持單元400之上部外壁上。因此,角度限制板41〇 功能在於限制自有機材料沉積源則噴灌之有機材料的喷 麗方向。 轉移單元500功能在於在第一方向上(在水平方向上) 轉移沉積源固持單元400。轉移單元5〇〇控制起初位於腔室 100之等待區中的沉積源固持單元400。接著,當第一基板 110之對準由第一基板對準單元2〇〇完成時,轉移單元5〇〇 將沉積源固持單元400轉移至第一基板沉積區以在第一基 10 201100576 板110上進行沉積製程。 此後’當第二基板110,之對準由 β 完成時,轉移單元500將沉積源一土 #早元210 基板》儿積區以在第二基板 王第一 υ上進行沉積製程。 亦即,在針對第一基板U〇 &gt; 楚一 A 進仃沉積製程的同時,斜斜 第一基板11〇|進行轉移及對準 十對 板110進行沉積製程的同時 — 對準製程。因此,處理產1ΓΓ 0進行轉移及 Ο 卞眷&amp; 寺4可顯著縮短且有機材# t 浪費置亦降低,以致可使材料效率最大。 材抖之 轉移單元500較佳緩會絲丨、,灿丄 她… 住、士實施以致在維持於真空狀態下之 腔至100中使用轉移單元500 積源300之轉移速率可 # I、’且有機材料沉 _ 處條件而定加以控制。轉移單 凡500可包括滾珠螺桿( )、用於使該滾珠螺桿旋 馬達(圖中未示)及用於導引沉積源固持單元4〇〇之 Κ中未不),’然而此描述僅出於說明性目的而提供。 〇 另-具體實例令’轉移單元5〇〇可經實施以致可使用線 性馬達(圖中夫千、|V +、± * ’疋速率驅動有機材料沉積源300。 另外,用於決定欲沉積之有機材料形狀的遮罩圖案12〇 &quot;'第&amp;第一基板1 i 0 A j i 〇,之前側,亦即位於有機材料 l積源300與第一及第二基板11〇及11〇,之間。因此,自有 機材料沉積源300蒸發之有機材料在穿過遮罩圖案12〇的 :^積於第-及第二基板11〇及11〇’上’以致具有預定形 之有機膜形成於第—及第二基板110及110,上。 同時,有機材料沉積源300含有欲沉積於第一及第二 11 201100576 基板」1G Am’上之有機材料且加熱所容納之有機材料以 療發該有機材料。接著,有機材料沉積源3〇〇將蒸發之 機材料嘴灑於第-及第二基板110及11〇,上以致錢膜形 成於第-及第二基板100及11〇,上。有機材料沉積源_ 可以線性沉積源或點沉積源形式實施。 應瞭解點沉積源難以使有機材料沉積於大面積上。對 於使有機材料沉積於大面積上,必須配置若干個點沉積 源。當使用許多點源時,難以控制複數個點沉㈣。因此, 在本發明之具體實财,有機材料沉積源300較佳以線性 沉積源形式實施。 現參看®2A至2D,圖2A至2D為說明根據本發明之 第一具體實例的沉積有機材料之方法的視圖,其藉由如圖^ 中所说明之用於沉積有機材料之設備來進行。如圖Μ中所 說二在將第一基板U〇轉移至腔室1〇0中之後且在完成第 一基板U〇上之對準製程之前,固持有機材料沉積源300 之:積源固持單元4〇0位於等待區中,該等待區為腔室100 之〜£。為了將基板轉移至腔室1〇〇中,將機 見圖5)及轉移室(束^ 夕 )連接於群集型沉積之腔室1〇〇。 有機沉積源300遠蟢π紙_甘&amp; „ + 運續不斷蒸發及喷灑有機材料,即使 :=待區中時亦如此。然而’當有機材料沉積源綱 二=區中時’有機材料不沉積於第一或第二基板η〇In the process manufacturing of the organic light-emitting diode element having the above configuration, the organic thin film and the electrode (including the hole injection layer, the hole transport layer, the emission layer, the electron transport layer, and the like) can be deposited by a deposition method using a deposition method. An electron injecting layer and the like are formed on the substrate. In the deposition method, after the substrate is loaded into the vacuum chamber, the film is formed by heating the container containing the organic material to be deposited and then evaporating or sublimating the organic material in the container. The organic thin film is deposited on the substrate by aligning the mask pattern having the opening of the shape in front of the substrate and then evaporating or sublimating the organic material. Prior to performing the deposition process, the process of transferring the substrate to the chamber, the process of accurately aligning the mask to the substrate, and the like are necessarily performed. According to the previous deposition equipment; 5 ancient soil, discussion and method, the deposition process is impossible to transfer the substrate and mask alignment @^ iim / line. In addition, the substrate is transferred and masked to the opposite side. Knife open. Therefore, it is possible to increase the processing distance. In addition, according to the previous method of sinking ^^ mm m ^ u, the organic material can be smashed during the substrate transfer and mask alignment process, and w 4 continues Evaporation or sublimation from the ice source. Therefore, Τ% will waste organic materials. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing the configuration of an apparatus for depositing an organic material according to the first embodiment of the present invention. The apparatus for depositing organic materials according to the first embodiment of the present invention. The first substrate aligning unit 2A having a chamber divided into a first substrate deposition region, etc., is disposed in the first substrate-substrate alignment of the first substrate deposition region. Locating in the substrate deposition region such that the substrate: the substrate is transferred from the external substrate to the substrate aligning unit 210, at least one of which is used to spray the particles onto the first and second substrates 110 and 11 On the organic material, Shen Jitong 3〇〇, used for solid-holding material deposition source ', Yuan Che and for transferring the deposition source in the first-party source retention single borrowing, the sequence If! surname - ° (for example, horizontal direction) Early Yuan transfer unit. As illustrated in FIG. U, the first substrate, the accumulation region, the waiting region, and the substrate deposition region are aligned in the first direction. △ Here, vacuum cancer is maintained in the chamber 100 by a vacuum system (not shown). In the first example of FIG. 1 and in the eight-body example, two organic material deposition sources 300 are held in the deposition source holding unit, and the angle limiting plate is formed in the deposition source holding unit 400. On the upper outer wall. Therefore, the angle limiting plate 41 〇 functions to limit the direction in which the organic material is sprinkled from the organic material deposition source. The transfer unit 500 functions to transfer the deposition source holding unit 400 in the first direction (in the horizontal direction). The transfer unit 5 〇〇 controls the deposition source holding unit 400 initially located in the waiting area of the chamber 100. Next, when the alignment of the first substrate 110 is completed by the first substrate aligning unit 2, the transfer unit 5 转移 transfers the deposition source holding unit 400 to the first substrate deposition region to be at the first substrate 10 201100576 The deposition process is carried out. Thereafter, when the alignment of the second substrate 110 is completed by β, the transfer unit 500 deposits a source of the soil #早元210 substrate to perform a deposition process on the first substrate of the second substrate. That is, while the first substrate U 〇 gt 仃 仃 仃 仃 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一Therefore, the treatment of the production of 1 ΓΓ 0 for the transfer and the 卞眷 卞眷 &amp; Temple 4 can be significantly shortened and the waste of the organic material # t is also reduced, so that the material efficiency can be maximized. The material shaking transfer unit 500 preferably slows down the wire, and the sputum is used to live in the cavity to maintain the vacuum state to 100. The transfer rate of the source 300 can be used to transfer the source 300. The organic material is controlled according to the conditions. The transfer unit 500 may include a ball screw ( ) for rotating the ball screw motor (not shown) and for guiding the deposition source holding unit 4, but the description is only Provided for illustrative purposes. Further, the specific example is such that the 'transfer unit 5' can be implemented so that the organic material deposition source 300 can be driven using a linear motor (the volts, |V + , ± * '疋 rate in the figure. In addition, it is used to determine the deposition to be deposited. a mask pattern 12 of an organic material shape &quot; 'first &amp; first substrate 1 i 0 A ji 〇, the front side, that is, the organic material 1 source 300 and the first and second substrates 11 〇 and 11 〇, Therefore, the organic material evaporated from the organic material deposition source 300 passes through the mask pattern 12: on the first and second substrates 11〇 and 11〇' so as to have a predetermined shape of the organic film formation. On the first and second substrates 110 and 110, at the same time, the organic material deposition source 300 contains the organic material to be deposited on the first and second 11 201100576 substrates "1G Am' and heats the organic material contained therein for treatment. The organic material is deposited on the first and second substrates 110 and 11A so that the money film is formed on the first and second substrates 100 and 11 Organic material deposition source _ can be implemented as a linear deposition source or a point deposition source It should be understood that point deposition sources are difficult to deposit organic materials on a large area. For the deposition of organic materials on a large area, several point deposition sources must be configured. When using many point sources, it is difficult to control a plurality of point sinks (4). In the specific implementation of the present invention, the organic material deposition source 300 is preferably implemented in the form of a linear deposition source. Referring now to ® 2A to 2D, FIGS. 2A to 2D are diagrams illustrating a method of depositing an organic material according to a first embodiment of the present invention. A view, which is performed by an apparatus for depositing an organic material as illustrated in Fig. 2. As shown in Fig. 2, after transferring the first substrate U〇 into the chamber 1〇0 and completing the first Before the alignment process on the substrate U, the solid source material deposition source 300: the source retention unit 4〇0 is located in the waiting area, which is the chamber 100. In order to transfer the substrate to the chamber 1〇 In the middle, connect the machine to Figure 5) and the transfer chamber (beam) to the chamber of the cluster deposition. The organic deposition source 300 is far from the π paper _ 甘 &amp; „ + continuous evaporation and spraying of organic materials, even if: = when in the zone. However, 'when the organic material is deposited in the second = the zone' organic material Not deposited on the first or second substrate η〇

Hi之任一者上。因此,在使第一或第二基板⑽或 110對準㈣時,提供於沉積源固持單元_之上部外壁上 的角度限制板410阻止蒸發之有機材料到達第一或第二基 12 201100576 板110或110,中之任一者。 亦即,在本發明之具體實例中,角度限制板41〇提供 於沉積源固持單元400之上部外壁上以致不再需要提供於 先前沉積設備中之障壁層。該障壁層提供於先前沉積設備 中且形成於基板與有機材料沉積源之間以在進行基板之對 準製程時阻止有機材料沉積於基板上。 Ο Ο 當由第—基板對準單元2GG完成第-基板1Η)上之對準 時,將如圖2A中所說明位於腔室1〇〇之等待區中的沉積源 :持…〇〇如圖2B中所說明轉移至第-基板沉積區以致 第-基板UO面朝有機材料沉積源、3〇〇以致可在第一基板 π〇:進行沉積製程。如圖2B中所說明,在第—具體實例 ’在儿積於第一基板11〇上期間,沉積源_在相同第一 方向上在第一基板沉積區令移動。 進行發明之具體實例中’在針對第-基板u。 第-基板1「㈣’將第二基板110,自外部轉移至腔室之 第:基板此積區且由第二基板對準單A 21G進行轉移 ;基板u°,的對準製程。亦即,第二基板之轉移及對準 製程與針對第-基板U0之沉積製程同時進行轉移及對丰 接著,當完成針對第—基fell 2C中所說明,由轉移單元 =程時’如圖 室H)0之等待區令 :、#早凡400轉移回腔 .,u 將弟―基板自腔室100中移屮。 由如上文所述及如圖5中所說 中移出 機器手臂移出第一基板110。冑由提供於轉移室甲之 當完成針對第二基板110 對皁時,如圖2D中所說 13 201100576 明,=轉移單元500將位於腔冑1〇〇之等待區中的沉積源 持單元400轉移至第二基板沉積區且在第二基板沉積區 中進行沉積製程。在此具體實例中,對第二基板11〇,進行沉 積’同時將新的第三基板轉移至腔室中並轉移至第—基板 沉積區中且由第-基板對準單元使其料。在有機材 料》儿積於第二基板i 1〇’上的同時,沉積源在與自等待區及第 二及第二基板沉積區中之—者移動時相同之方肖(亦即第 方向)上移動。如猶後將在圖3至4D之第二具體實例中 描述’因為當沉積中沉積源之平移方向與在沉積期間沉積 之移動方向相同時’根據第—具體實例之腔室_ 必須設計成在第-方向上延伸額外距離,戶斤以此未能 效地利用空間。 有 +虽元成針對第二基板110·之沉積製程時,如圖2A中戶; ::1:=:兀500將沉積源固持單元40。再次轉❹ 之專待區且將第二基板110,自腔室中 的第四基板轉移至腔室中並轉移至第二基板沉積區。 針對:據ΐ:明之第一具體實例的方法,當在同-腔室中 針對弟-基板U0進行轉移及對準製程的同 製程,以致有機材料之浪費減少且產= 從而使材料效率最大且使處理產距時間最短。 然而,在如圖丨至2D中所說明之本發明 例中,因為在沉積製程期間沉積源實 第-基板沉積區轉到第二基板沉積區(或自第方:與當自 區轉到第-基板沉積區)以針對弟-基板沉積 另基板進行沉積時沉積 14 201100576 源300移動&gt; 士 a 4口。 勖之方向相同,所以腔室 沉積製程之方向(第—方W 之寬度以在進行 J、乐方向)上增加。 亦即’因為當完成針對第一 則經轉移以在第二基fcln ”之沉積後沉積源 盥沉積it ~ t 上進仃 儿積時,沉積源300在 以腔… 第一方向(水平方向)上轉移,所 合“ 弟方向(水平方向)上增加約兩仵以 允許針對第-及第二基板11〇及u〇’進行沉積。兩^ ΟAny of Hi. Therefore, when the first or second substrate (10) or 110 is aligned (four), the angle limiting plate 410 provided on the upper wall of the deposition source holding unit prevents the evaporated organic material from reaching the first or second base 12 201100576 plate 110 Or 110, either. That is, in the embodiment of the present invention, the angle restricting plate 41 is provided on the outer wall of the upper portion of the deposition source holding unit 400 so that the barrier layer provided in the previous deposition apparatus is no longer required. The barrier layer is provided in a prior deposition apparatus and is formed between the substrate and the organic material deposition source to prevent deposition of the organic material on the substrate during the alignment process of the substrate. Ο When the alignment on the first substrate 1 is completed by the first substrate aligning unit 2GG, the deposition source located in the waiting region of the chamber 1〇〇 as illustrated in FIG. 2A is held as shown in FIG. 2B. The transfer to the first substrate deposition region is described so that the first substrate UO faces the organic material deposition source, so that the deposition process can be performed on the first substrate. As illustrated in Fig. 2B, during the first embodiment, during deposition on the first substrate 11, the deposition source is moved in the first substrate deposition region in the same first direction. In the specific example of carrying out the invention, it is directed to the first substrate u. The first substrate 1 "(4)" transfers the second substrate 110 from the outside to the substrate: the substrate is transferred from the second substrate by the single A 21G; the substrate u°, the alignment process. The transfer and alignment process of the second substrate and the deposition process for the first substrate U0 are simultaneously transferred and aligned, and when completed for the base-based fir 2C, by the transfer unit = process time, the chamber H Waiting area of 0:, #早凡400 transferred back to the cavity., u Move the younger-substrate from the chamber 100. Remove the first substrate by removing the robotic arm as described above and as shown in Figure 5. 110. When the soap is provided for the second substrate 110 by the transfer chamber A, as shown in FIG. 2D, 13 201100576, the transfer unit 500 will be located in the waiting region of the cavity 1胄. The unit 400 transfers to the second substrate deposition region and performs a deposition process in the second substrate deposition region. In this specific example, the second substrate 11 is deposited, while the new third substrate is transferred into the chamber and Transfer to the first substrate deposition zone and feed it by the first substrate alignment unit. While the material is accumulated on the second substrate i 1 〇 ', the deposition source moves in the same square (ie, the first direction) as when moving from the waiting region and the second and second substrate deposition regions As will be described later in the second embodiment of Figures 3 to 4D 'because the direction of translation of the deposition source in deposition is the same as the direction of movement during deposition, the chamber _ according to the first specific example must be designed Extending the extra distance in the first direction, the user can not effectively use the space. When there is a deposition process for the second substrate 110·, as shown in Figure 2A; ::1:=:兀500 The deposition source holding unit 40. turns the special treatment zone again and transfers the second substrate 110 from the fourth substrate in the chamber to the chamber and transfers to the second substrate deposition region. The method of the specific example, when the same process of transferring and aligning the process is performed in the same chamber for the substrate-substrate U0, the waste of the organic material is reduced and the yield is reduced to maximize the material efficiency and minimize the processing time. The invention as illustrated in Figures 2 to 2D Because, during the deposition process, the deposition source-substrate deposition region is transferred to the second substrate deposition region (or from the first side: and when the self-region is transferred to the first substrate deposition region) to deposit the substrate for the other substrate deposition. Time deposition 14 201100576 Source 300 moves &gt; A a 4. The direction of the 勖 is the same, so the direction of the chamber deposition process (the width of the first-square W is increased in the direction of J, music). In the first direction (horizontal direction), the deposition source 300 is transferred in the first direction (horizontal direction) for the deposition of the source 盥 deposition source ~ deposition in the second base fcln ” About two turns are added in the direction of the younger (horizontal direction) to allow deposition for the first and second substrates 11 and u'. Two ^ Ο

間移2方;本發明之第二具體實例中,沉積源在沉積期 方向與移動沉積源以自—個基板沉積區轉到另一 例:广積區之方向不同。#由根據本發明之第二具體實 腔室,之尺寸及形狀產生最佳空間效率: 上成問碭將得到解決。 之第二具體實例的 ,因為遮蔽罩及沉 具體實例相同,所 ’賦予相同元件相 現參看圖3’圖3為說明根據本發明 用於沉積有機材料之設備的視圖。然而 積源與如圖1中所說明之本發明之第— 、將省去對其之描述且出於說明性目的 同參考數字。 參看圖3’根據本發明之第二具體實例的用於沉積有機 ,之設備包括具有分成第一基板沉積區Α及第二基板沉 之内部的腔室_、位於第一基板沉積區a中以使 卜4轉移之第一基板11〇對準的第一基板對準單元、 位於Μ _ f α U⑴矛一基板沉積區Β中以使自該外部轉移之第二基板 對準的第二基板對準單元210、至少一個用於將該有機 料粒子噴灑於第一及第二基板11〇及11〇,上之有機材料 15 201100576 沉積源300、用於固拉古A u -,ΛΛ 持有機材料沉積源300之沉積源固持 兀400、用於使有機材 符早 ^ .. 積源在第一方向上旋轉以將有機 材料沉積源300自第一乃μ 有機 — 及第—基板沉積區中之一者移動至 &quot;^積區巾m的第—轉移單元51G以及用 於在第-及第二基板沉積區中之一者中在第二方 沉積源固持單元400的第二轉移單元⑽。 轉移 此處,在腔室_中由真空泉(圖中未示)維持真* ^態。由提供於轉移室(參見圖5)中且連接於群集型沉: 系統之腔室_的機器手臂(參見圖5)將基板轉移 至腔室600中。 所說明之第一基板沉積區A及第二基板沉積區B幾乎 接近第二方向彼此平行配置,其中進行在各別沉積區八及8 中進行之基板沉積,藉此由第二轉移單元52(M吏固持沉積 源3=之沉積源固持單元4〇〇在第二方向上往復運動。 當在第一基板沉積區A中完成第一基板11〇上之沉積 時,由第一轉移單元51〇使沉積源固持單元4〇〇在第一方 向上旋轉以致其位於第二基板沉積區B中,且接著在沉積 =第二基板H0,上期間由第二轉移單元520使沉積源固持 單元400在第二方向上往復運動。 類似地,當在第二基板沉積區B中完成第二基板ιι〇, 之儿積時,由第一轉移單元5丨〇使沉積源固持單元4〇〇在 第一方向上旋轉以致其位於第一基板沉積區A中,且接著 在沉積於新進入之第三基板上期間由第二轉移單元52〇使 沉積源固持單元400在第二方向上往復運動。 16 201100576 第-及第二轉移單元川及52〇較佳經實施以致在维 持於真空狀態下之腔室_中使用第—及第二轉移單元別 及520可為適合的,且有機材料沉積源之轉移速率可 視處理條件而定加以控制。第—及第二轉移單元⑽及別 可包括用於固持每-基板之固持器512及^、滾珠螺桿(圖 中未不)、用於使該滾珠螺桿旋轉之馬達(圖中未示)及用 於導引沉積源固持單元400之導執(圖中未示),然而此 〇描述僅出於說明性目的而提供。在另-變化形式中,轉移 早兀5H)及520可經實施以致可使用線性馬達(圖中未示) 以恆定速率驅動有機材料沉積源3〇〇。 在,考圖1至2D所述之第一具體實例中,因為沉積源 經轉移以在腔室中在與自一個基板沉積區移動至另一個基 板沉積區時沉積源轉移之方向相同的方向(水平方向)上 沉積各別基板,所以腔室之寬度必須在沉積源移動之第一 方向上增加約兩倍。然而,在如圖3中所說明之具體實例 ◎ * ’沉積源經轉移以沉積各別基板之方向(第二方向)與 沉積源300經轉移以自一個基板沉積區移動至另一個美板 沉積區之方向(第-方向)不同,以致本發明之第二錢 實例的腔室600之尺寸及形狀之空間效率比本發明之第一 具體實例的處理室100之空間效率高。 然而’為此,在如圖3中所說明之具體實例中,腔室 副之主體以多角形容器形式實施,該容器在第_側面二 上之長度U長於在第二侧面104上之長度匕2以致可使第 -轉移單元51〇在第一方向上旋轉’且因此可使腔室_ 17 201100576 之寬度增加最小。儘管腔室600之主體在如圖3中所說明 之具體實例中以多角形容器形式描述,但此僅出於說明性 目的而提供。腔室之主體可改為以第一側面丨〇2彎曲之五 角形容器形式實施。 在此情況下,第一側面102相鄰於第一轉移單元5 1 0 且第二側面104與第一側面1 〇2相對,其中將基板轉移及 傳送進出腔室6 0 0在第二側面1 〇 4上進行。因此,第二側 面104具有開口(圖中未示)以致可轉移及傳送基板。 下文’由圖3中所說明之設備進行的沉積有機材料之 方法將參看圖4A至4D詳細描述。參看圖4a,經由形成於 腔室100主體的第二側面1 〇4中之開口(圖中未示)將第 基板110轉移至腔室600中。接著,由第一基板對準單元 200進行對準製程。接著,由位於第一基板沉積區a中之第 二轉移單元520使沉積源固持單元4〇0在第一基板沉積區a 中在第二方向上往復運動以致可在第一基板11〇上進行沉 積製程。 在針對第一基板110之沉積製程期間,經由形成於第二 側面104中之開口(圖中未示)且如圖4B中所說明將第: 基板110’轉移至腔室600中,且由第二基板對準單元2 進行對準製程。 八此時,第一基板對準單元2〇〇及第二基板對準單元21〇 別位於第一基板沉積區A及第二基板沉積區B中,且大 為其組態與如i所說明之組態相口 亦η了囑去描述。 ’在本發明之具體實例中’帛二基11〇,之轉移及對準 18 201100576 製程在與將有機材料沉積於第 中同時進行。 一基板110上相同之腔室600 當完成第一基板110上之沉積製程及第二基板1HT上 之對準製程時,如圖4C中所說明,由第一轉移單元“Ο使 沉積源固持單A彻在第一方向上旋轉以致其位於第二基 板沉積區B中。此時,完成沉積製程之第-基板U0自腔 室刚中移出且新的第一基板11〇(以下為第三基板)進入In the second embodiment of the present invention, the deposition source is different from the direction in which the deposition source is moved from the substrate deposition region to the other substrate in the direction of deposition. # The optimum spatial efficiency is produced by the size and shape of the second concrete chamber according to the present invention: The problem will be solved. In the second embodiment, since the mask and the sinking example are the same, the same component is given. Referring to Fig. 3', Fig. 3 is a view for explaining an apparatus for depositing an organic material according to the present invention. However, the source of the invention is the same as that of the invention as illustrated in Fig. 1, and the description thereof will be omitted and the same reference numerals are used for illustrative purposes. Referring to FIG. 3, a device for depositing organic according to a second embodiment of the present invention includes a chamber having a first substrate deposition region and a second substrate sink, located in the first substrate deposition region a. a first substrate aligning unit aligned with the first substrate 11 转移 transferred, and a second substrate pair positioned in the 沉积 f f α U(1) spear substrate deposition area to align the second substrate transferred from the external The quasi unit 210, at least one organic material 15 for spraying the organic material particles on the first and second substrates 11 and 11〇, 201100576 deposition source 300, for fixing the Gu Au -, ΛΛ holding machine The deposition source of the material deposition source 300 holds the crucible 400 for rotating the organic material in the first direction to deposit the organic material deposition source 300 from the first organic layer and the first substrate deposition region. One of the first transfer unit 51G moving to the &quot;^ area towel m and the second transfer unit (10) for depositing the source holding unit 400 in the second side in one of the first and second substrate deposition areas . Transfer Here, the true state is maintained in the chamber _ by a vacuum spring (not shown). The substrate is transferred into the chamber 600 by a robotic arm (see Fig. 5) provided in the transfer chamber (see Fig. 5) and connected to the chamber of the cluster type: system. The illustrated first substrate deposition region A and second substrate deposition region B are disposed in parallel with each other in a nearly second direction, wherein substrate deposition in respective deposition regions 8 and 8 is performed, whereby the second transfer unit 52 is The deposition source holding unit 4 of the M吏 holding deposition source 3= reciprocates in the second direction. When the deposition on the first substrate 11 is completed in the first substrate deposition area A, the first transfer unit 51 is used. The deposition source holding unit 4 is rotated in the first direction so that it is located in the second substrate deposition region B, and then the deposition source holding unit 400 is caused by the second transfer unit 520 during deposition = second substrate H0 Reciprocating in the second direction. Similarly, when the second substrate ιι is completed in the second substrate deposition region B, the deposition source holding unit 4 is first smashed by the first transfer unit 5 The direction is rotated such that it is located in the first substrate deposition area A, and then the deposition source holding unit 400 is reciprocated in the second direction by the second transfer unit 52 during deposition on the newly entered third substrate. 16 201100576 First and second turn The unit and the 52 〇 are preferably implemented such that the use of the first and second transfer units and 520 in the chamber maintained under vacuum may be suitable, and the transfer rate of the organic material deposition source may be determined depending on the processing conditions. The first and second transfer units (10) and the other may include a holder for holding each of the substrates 512 and ^, a ball screw (not shown), and a motor for rotating the ball screw (not shown) And a guide for guiding the deposition source holding unit 400 (not shown), however, the description is provided for illustrative purposes only. In another variation, the transfer is earlier than 5H) and 520. It is implemented such that the organic material deposition source 3〇〇 can be driven at a constant rate using a linear motor (not shown). In the first specific example described in FIGS. 1 to 2D, since the deposition source is transferred to be in the same direction in the chamber as the direction in which the deposition source is transferred when moving from one substrate deposition region to another substrate deposition region ( The respective substrates are deposited in the horizontal direction, so the width of the chamber must be increased by about two times in the first direction in which the deposition source moves. However, in the specific example illustrated in FIG. 3, the 'deposition source is transferred to deposit the respective substrates (the second direction) and the deposition source 300 is transferred to move from one substrate deposition region to another. The direction of the zones (the first direction) is different, so that the space efficiency of the size and shape of the chamber 600 of the second embodiment of the present invention is higher than that of the process chamber 100 of the first embodiment of the present invention. However, for this purpose, in the specific example illustrated in Figure 3, the body of the chamber pair is embodied in the form of a polygonal container having a length U on the first side 2 that is longer than the length on the second side 104. 2 such that the first-transfer unit 51 can be rotated in the first direction and thus the width of the chamber _ 17 201100576 can be minimized. Although the body of the chamber 600 is described in the form of a polygonal container in the specific example illustrated in Figure 3, this is provided for illustrative purposes only. The body of the chamber can instead be implemented in the form of a pentagonal container that is curved with the first side 丨〇2. In this case, the first side 102 is adjacent to the first transfer unit 5 1 0 and the second side 104 is opposite the first side 1 〇 2, wherein the substrate is transferred and transferred into and out of the chamber 600 in the second side 1 On 〇4. Therefore, the second side 104 has an opening (not shown) so that the substrate can be transferred and transferred. The method of depositing an organic material by the apparatus illustrated in Fig. 3 hereinafter will be described in detail with reference to Figs. 4A to 4D. Referring to Fig. 4a, the first substrate 110 is transferred into the chamber 600 via an opening (not shown) formed in the second side 1b of the body of the chamber 100. Next, an alignment process is performed by the first substrate alignment unit 200. Next, the deposition source holding unit 420 is reciprocated in the second direction in the first substrate deposition region a by the second transfer unit 520 located in the first substrate deposition region a so as to be performable on the first substrate 11? Deposition process. During the deposition process for the first substrate 110, the first substrate 110' is transferred into the chamber 600 via an opening (not shown) formed in the second side 104 and as illustrated in FIG. 4B, and The two substrate alignment unit 2 performs an alignment process. At this time, the first substrate aligning unit 2 and the second substrate aligning unit 21 are located in the first substrate deposition area A and the second substrate deposition area B, and are configured as described in FIG. The configuration phase is also described. In the embodiment of the present invention, the transfer and alignment of the substrate is performed simultaneously with the deposition of the organic material in the middle. The same chamber 600 on a substrate 110, when the deposition process on the first substrate 110 and the alignment process on the second substrate 1HT are completed, as illustrated in FIG. 4C, the deposition unit is held by the first transfer unit. A is rotated in the first direction so that it is located in the second substrate deposition region B. At this time, the first substrate U0 which completes the deposition process is removed from the chamber and the new first substrate 11 is (hereinafter, the third substrate) )enter

腔至600之第一基板沉積區a以進行對準。因為藉由第一 轉移單元510在基本上與第二方向正交之第—方向上使含 :有機材料沉積源300之沉積源固持單元400自第一基板 况積區A旋轉至第二基板沉積區B,所以與圖i至之第 -具體實例的腔室100相比,腔室_之寬度可顯著減小。 亦即,如圖3至扣中所說明,在本發明之第二具體實 例中,腔冑_以多㈣容器形式實施,該容器在第一側 面102上之長度L1較長於在第二側自1〇4上之長度以使沉The cavity is to the first substrate deposition area a of 600 for alignment. Because the deposition source holding unit 400 including the organic material deposition source 300 is rotated from the first substrate-type region A to the second substrate by the first transfer unit 510 in a first direction substantially orthogonal to the second direction Zone B, so the width of the chamber can be significantly reduced compared to the chamber 100 of the first to specific embodiment of Figures i. That is, as illustrated in FIG. 3 to the buckle, in the second embodiment of the present invention, the cavity is implemented in the form of a multi- (four) container having a length L1 on the first side 102 that is longer than that on the second side. 1〇4 on the length to make Shen

積源固持單元及有機材料沉積源300能夠旋轉以致空 間利用最大化。 在如圖4D中所說明,沉積源固持單元4〇〇位於第二基 板沉積區B中後’源固持單元彻在第二基板沉積區“ 在第二方向上往復運動以致可在第二基板m,上進行沉積 _另外,由位於第一基板沉積區A中之第一基板對準單 凡鳩進行新轉移至腔冑_中之第三基板的對準製程, 其與在第二基板沉積區』中在第二基板ιι〇,上進行之沉積 201100576 製程同時進行。㈣,在本發明之第二具體實例中,在與 進行第—基板110’上之沉積製程相同的腔室中與此同 =進行新的第-基板110 (亦稱為第三基板)之轉移及對準 製程。虽it成第二基才反110’上之沉積製程時,重複如圖4A 至4D中所說明之製程順序且進行各別基板之沉積及對準製 現參看圖5,圖5為示意性說明有機材料沉積系統1〇 之方塊圖’ g亥系統包括根據本發明之第三具體實例的有機 材料沉積設備。如圖5中所說明之有機材料沉積系統1〇呈 傷處j室600a及嶋,其設計類似於圖3之處理室_了 ::體。,’圖5之腔室600a及600b的主體包括多角形容 器j其第一側面較長於第二側面以使空間利用最大化以致 更多處理室可提供於有限空間環境中,諸如圖5之群集系 參看圖5,根據本發明之第三具體實例的用⑨沉積有機 材料之系統H)以群集型系統形式實施,該系統包括複數個 用於進行有機材料之沉積製程的處理室6_、義、 及通常用於連接每一處理室_a、嶋及了嶋 的轉移室20,及用於裝載及/或卸載穿過轉移室插入處理室 中之基板m、110,及110&quot;的裝載閘室3〇及32。遮蔽罩單 兀40”可進一步提供於在處理室6〇〇a、6〇〇b、及7〇帅 中之’儿積製程期間欲使用之轉移室2〇的側面。 處理室600a、600b、700a及7〇〇b為進行有機材料之沉 積製程的有機材料沉積設備,且包括各在至少兩個基板上 20 201100576 ,行沉積製程之處理室6003及6001)以及在單個基板上進行 沉積製程之處理室700a及700b。亦即,在圖5之第三具體 實例中,第一及第二處理室6〇〇a及6〇〇b各進行兩個基板之 沉f製程且經實施以致當針對一個基板進行轉移及對準製 程時在另一個基板上進行沉積製程。在此情況下,第一及 第二處理室600a及600b如在參看圖3至4〇所述之有機材 料沉積設備的第二具體實例中實施。第三及第四處理室 7〇〇a及70015分別依序進行單個基板之對準及沉積製程。 一在根據本發明之第三具體實例的群集型沉積系統中, 第一及第二處理室6〇〇a&amp; 6〇〇b以多角形容器形式實施,該 :器具有長度不同之第一及第二側面以致可顯著減少由第 =及第二處理室6〇〇a及6〇〇b佔據之空間且可進一步提供第 三及第四處理t狐及7_。另外,相較於先前沉積系統, 沉積產量得到顯著改良。The accumulation source holding unit and the organic material deposition source 300 are rotatable so that space utilization is maximized. As illustrated in FIG. 4D, the deposition source holding unit 4 is located in the second substrate deposition region B, and then the 'source holding unit is reciprocated in the second direction in the second substrate deposition region so as to be available on the second substrate m. Depositing on the top substrate. In addition, the first substrate in the first substrate deposition region A is aligned with the single substrate, and the third substrate is transferred to the third substrate in the alignment process, and the second substrate is deposited in the second substrate. The process of depositing 201100576 on the second substrate ιι 同时 is performed simultaneously. (d), in the second embodiment of the present invention, in the same chamber as the deposition process on the first substrate 110' = performing a transfer and alignment process of a new first substrate 110 (also referred to as a third substrate). Although it is a second substrate, the process described in Figures 4A through 4D is repeated. Referring to FIG. 5, FIG. 5 is a block diagram schematically illustrating an organic material deposition system. The g Hai system includes an organic material deposition apparatus according to a third specific example of the present invention. Organic as illustrated in Figure 5. The material deposition system 1〇 is in the room ja 600a and the crucible, and its design is similar to the processing chamber of FIG. 3, the body of the chambers 600a and 600b of FIG. 5 includes the first side of the polygonal container j. Longer than the second side to maximize space utilization so that more processing chambers can be provided in a limited space environment, such as the cluster of FIG. 5, see FIG. 5, a system for depositing organic materials with 9 according to a third embodiment of the present invention. H) is implemented in the form of a cluster system comprising a plurality of processing chambers for performing a deposition process of organic materials, and a transfer chamber 20 generally used for connecting each of the processing chambers _a, 嶋, and 嶋, And loading chambers 3 and 32 for loading and/or unloading the substrates m, 110, and 110&quot; inserted into the processing chamber through the transfer chamber. The mask unit 40" may be further provided in the processing chamber 6 a, 6〇〇b, and 7〇's side of the transfer room to be used during the process of the product. The processing chambers 600a, 600b, 700a, and 7〇〇b are organic material deposition apparatuses for performing a deposition process of an organic material, and include processing chambers 6003 and 6001 each on at least two substrates 20 201100576, and a deposition process, and a single The processing chambers 700a and 700b of the deposition process are performed on the substrate. That is, in the third embodiment of FIG. 5, the first and second processing chambers 6a and 6b each perform a two-substrate process and are implemented such that when a substrate is transferred and The deposition process is performed on another substrate during the quasi-process. In this case, the first and second processing chambers 600a and 600b are implemented as in the second embodiment of the organic material deposition apparatus described with reference to Figs. 3 to 4B. The third and fourth processing chambers 7A and 70015 sequentially perform alignment and deposition processes of the individual substrates, respectively. In a cluster type deposition system according to a third embodiment of the present invention, the first and second processing chambers 6〇〇a &amp; 6〇〇b are implemented in the form of a polygonal container having a first length and a different length The second side is such that the space occupied by the first and second processing chambers 6a and 6B can be significantly reduced and the third and fourth processing t-foxes and 7_ can be further provided. In addition, the deposition yield is significantly improved compared to previous deposition systems.

各別處理室600a、600b、70〇a及700b可分別使其他有 機材料沉積於基板上或可使相同有機材料沉積於基板上。 舉例而言’在圖5之具體實例中,在第__及第三處理室⑽ 及7〇〇a中沉積第一有機材料且在第二及第四處理室 及700b中沉積第二有機材料。 將在第-處理室600a中完成第一有機材料之沉積製程 的基板轉移至第二處理室嶋且接著進一步沉積第二 材料。類似地,將在第三處理室7〇〇a中完成第一有機材料 之沉積的基板轉移至第四處理室鳩且在第四處理室亀 中進一步沉積第二有機材料。 21 201100576 室 罩 別 轉移室20經由轉移室2〇之侧壁區域連接於上述處理 600a ' 6_、7術及7_,裝制室3()及32,及遮蔽 單元40。在此情況下’提供穿透部分以以允許基板在各 側壁區域中進入及離開。 亦即,轉移室20包括具有用於基板轉移之轉移空間的 主體22及一對提供於主體22令之機器手臂Μ%,。, 對機器手臂26及26,將提供於裝載問室3〇中之基板轉移‘ 處理室600a、600b、7〇〇a及7〇〇b中之一者或將由處理室 _a或7_進行第—沉積之基板轉移及傳送至另—處理室 6〇〇b或700b或裝載閘室32。如上文所述裝載間室%及 Μ震載及/或卸載插入處理室中之基板ii〇、u〇,及&quot;ο,,。 在本發明之第三具體實例中,至少兩個機器手臂26及 26,提供於轉移室20之主體22中以致在進行第一基板11〇 之沉積製程的同時可將第二基板11〇,轉移至處理室600a或 〇根據本發明之第三具體實例的有機材料沉積系統1 〇之 j乍將如下簡短描述。首先,當將複數個基板自外部傳送 2備(圖中未示)轉移至第一裝載閘室30時,第一裝載閘 至30裝載轉移之基板。 一田基板之裝载完成時,第一裝載閘室30之門(圖中未 厂)關閉且第—裝載閘室30為真空狀態。隨後,轉移室20 ^ f —機器手臂26將該等基板中之第一基板110穿過轉移 〇轉移至第—處理室600 a。在此情況下,第一處理室600 a 及第—声 ^ —处理室60〇b中之製程與由圖3至4D之腔室600的 22 201100576 有機材料沉積設備進行 述。 之沉積製程相同 且將如下簡短描 基板U0S準。當對準製 處理室600a之第一 沉積製程。亦即,使第―:凡時’在第-基板110上進行 有機材料沉積於第—其^ n 在使第-有機材料沉穑μ 狀第基板110上。 板110上的同時,由第_ 乐丞 裝綱3G中之基板;^手=,將複數個裝載於第一 Ο ,ΛΛ ^ Β 幻第一基板110,轉移至第一處理室 600a。亦即,當在第—虛 ”籍创μ 處理室6〇〇a中第一基板⑽上進行 沉積製程時,在第一處理 w 至60〇a中進行第二基板11〇,之 移及對準製程。在對準製程$ 積製程。 早製程-成後在第二基板m,上進行沉 由第一機器手臂26將Λ ^灶&amp; 0將凡成沉積製程之第一基板11〇 移至第二處理室鳴。因此,在第二處理室曝中使第一 基板110對準且在處理室嶋中完成第—基板11〇之對準 ❹製程後使第二有機材肖沉積於第—基feu〇上。 第一基板U〇進入第二處理室6_後,在第二處理室 _b中將第二有機材料沉積於第—基板ιι〇上之沉積製程 期間,由第二機器手臂26,將在第—處理室6_中完成沉積 製程之第二基板110,自第一處理室600&amp;轉移至第二處理 600b。 亦即,當在第二處理室600b中第一基板i丨〇上進行第 二有機層之 &gt;儿積製程的同時,在第二處理室6〇〇b中進行第 二基板110'之轉移及對準製程。 23 201100576 沉積於第一及 由機器手臂26 至第二裝載閘 藉由如此操作,當第一及第二有機材料 第二基板110及11〇|上之沉積製程完成時, 或26將第及第一基板持續轉移 室3 2並分別卸載。 當在處理室6_及_b中處理第—及第二基板ιι〇 及:1 〇|的同時’處理室700a及700b可處理第三基板i〇〇,,。 此以第-或第二機器手臂26或261將震載於第一裝載閉室 30中之基板中的第三基板110&quot;穿過轉移室2〇轉移至第三處 理室鳩開始。隨後’在第三處理室700a中使第三基板 m',對準。當對準製程完成時,在第三基U0,,上進行第 :有機材料之沉積製程。當第三基板110&quot;之沉積製程完成 時,機器手臂26或26,將第三基板110&quot;轉移至第四處理室 鳩,且在第四處理室獅中使第三基板對準。當對 準製程完成時,使第二有機材料沉積於第三基&amp; ιι〇”上。 隨後’當第-及第二有機材料沉積於第三基板⑽,,上之沉 ^製程完成時,將第三基板11G&quot;轉移至第二裝載閘室32且 由機器手臂26或26,卸載。 此時,第三基板110”之沉積製程,亦即在第三及第四 處理室70〇a及700b中進行之沉積製程可與 板110及11〇1上進行之沉積製程同時進行、。 統 理 化 因此’根據本發明之第三具體實例的有機材料沉積系 針對三個基板之沉積製程可同時進行以致在各別處 室中之等待時間可縮短且生產率及產量可增加並最大 24 201100576 雖然本發明已與某些例示性具體實例結合進行描述, 但應瞭解本發明並不限於所揭示之具體實例,反而意欲覆 蓋隨附申請專利範圍及其等效物之精神及範疇中所包括之 各種修改及等效物。 【圖式簡單說明】 圖1為示意性說明根據本發明之第一具體實例的用於 〇沉積有機材料之設備組態的橫截面圖; 圖2A至2D為說明根據本發明之該第一具體實例使用 圖1之設備沉積有機材料之方法的視圖; 圖3為說明根據本發明之第二具體實例的用於沉積有 機材料之設備的視圖; 圖4 A至4D為說明根據本發明之該第二具體實例使用 圖3之設備沉積有機材料之方法的視圖;及 統圖5為根據本發明之第三具體實例的有機材料沉積系 〇例=意性方塊圖,該系統包括根據本發明之第二具體實 的有機材料沉積設備。 【主要元件符號說明】 10:有機材料沉積系統 20 :轉移室 22:主體 24 :穿透部分 26 :機器手臂 25 201100576 26·: 機器手臂 30 : 裝載閘室 32 : 裝載閘室 40 : 遮蔽罩單元 100 : 腔室 102 : 第一側面 104 : 第二侧面 110 : 第一基板 110丨 .弟二基板 110&quot; :第三基板 120 : 遮罩圖案 200 : 第一基板對 準 — 早兀 210 : 第二基板對 準 — 早兀 300 : 有機材料沉 積 源 400 : 沉積源固持 單 元 410 : 角度限制板 500 : 轉移單元 510 : 第一轉移單 元 512 : 固持器 520 : 第二轉移單 元 522 : 固持器 600 : 腔室 600a :處理室 600b :處理室 26 201100576 700a :處理室 700b :處理室 A :第一基板沉積區 B :第二基板沉積區 L1 :長度 L2 :長度The individual processing chambers 600a, 600b, 70A, and 700b can respectively deposit other organic materials on the substrate or deposit the same organic material on the substrate. For example, in the specific example of FIG. 5, a first organic material is deposited in the first and third processing chambers (10) and 7〇〇a, and a second organic material is deposited in the second and fourth processing chambers and 700b. . The substrate in which the deposition process of the first organic material is completed in the first processing chamber 600a is transferred to the second processing chamber and then the second material is further deposited. Similarly, the substrate in which the deposition of the first organic material is completed in the third processing chamber 7a is transferred to the fourth processing chamber and the second organic material is further deposited in the fourth processing chamber. 21 201100576 Room Cover Transfer chamber 20 is connected to the above-described processes 600a'6_, 7 and 7_, the mounting chambers 3() and 32, and the shielding unit 40 via the side wall regions of the transfer chamber 2''. In this case, a penetrating portion is provided to allow the substrate to enter and exit in the respective side wall regions. That is, the transfer chamber 20 includes a main body 22 having a transfer space for substrate transfer and a pair of machine arms 提供% provided to the main body 22. For the robot arms 26 and 26, one of the processing chambers 600a, 600b, 7〇〇a, and 7〇〇b to be transferred to the substrate in the loading chamber 3〇 or will be performed by the processing chamber_a or 7_ The first deposited substrate is transferred and transferred to another processing chamber 6〇〇b or 700b or to the loading chamber 32. As described above, the loading chamber % and the substrate are loaded and/or unloaded into the substrate ii, u, and &quot; In a third embodiment of the present invention, at least two robotic arms 26 and 26 are provided in the body 22 of the transfer chamber 20 so that the second substrate 11 can be transferred while the deposition process of the first substrate 11 is performed. The organic material deposition system 1 to the process chamber 600a or the third embodiment of the present invention will be briefly described as follows. First, when a plurality of substrates are transferred from the external transfer unit (not shown) to the first load lock chamber 30, the first load gates 30 carry the transferred substrates. When the loading of the field substrate is completed, the door of the first load lock chamber 30 (not shown) is closed and the first load lock chamber 30 is in a vacuum state. Subsequently, the transfer chamber 20^f-the robot arm 26 transfers the first substrate 110 in the substrates through the transfer port to the first processing chamber 600a. In this case, the processes in the first process chamber 600a and the first sound-treatment chamber 60B are described with the 22 201100576 organic material deposition apparatus of the chamber 600 of Figs. 3 to 4D. The deposition process is the same and will be briefly described as a substrate U0S. When the first deposition process of the process chamber 600a is aligned. That is, the organic material is deposited on the first substrate 110 by the first "every time", and the first organic material is deposited on the first substrate 110. At the same time as the board 110, the first substrate 110 is loaded onto the first processing chamber 600a by the substrate in the first ; 丞 装 3G; That is, when the deposition process is performed on the first substrate (10) in the first dummy region, the second substrate 11 is moved, and moved in the first process w to 60 〇a. In the process of aligning the process, the first process is performed on the second substrate m, and the first machine arm 26 is moved by the first robot arm 26 to move the first substrate 11 of the deposition process. Therefore, the first substrate 110 is aligned in the second processing chamber exposure, and the alignment of the first substrate 11 is completed in the processing chamber, and the second organic material is deposited on the first surface. After the first substrate U〇 enters the second processing chamber 6_, after depositing the second organic material on the first substrate ιι in the second processing chamber _b, the second robot arm 26. The second substrate 110, which will complete the deposition process in the first processing chamber 6_, is transferred from the first processing chamber 600 & to the second processing 600b. That is, when the first substrate i is in the second processing chamber 600b While the second organic layer of the second organic layer is being processed, the second substrate 110' is performed in the second processing chamber 6〇〇b Transfer and alignment process. 23 201100576 deposited on the first and from the robot arm 26 to the second load lock. By doing so, when the deposition processes on the first and second organic materials second substrates 110 and 11〇 are completed, Or the first substrate and the first substrate are continuously transferred to the chamber 3 2 and are respectively unloaded. When the first and second substrates ιι and 1:1 〇 are processed in the processing chambers 6_ and _b, the processing chambers 700a and 700b may be Processing the third substrate i, the first or second robot arm 26 or 261 transfers the third substrate 110 &quot; in the substrate in the first loading and closing chamber 30 through the transfer chamber 2 The three process chambers start. Then, the third substrate m' is aligned in the third process chamber 700a. When the alignment process is completed, the deposition process of the organic material is performed on the third substrate U0. Upon completion of the deposition process of the third substrate 110&quot;, the robotic arm 26 or 26 transfers the third substrate 110&quot; to the fourth processing chamber, and aligns the third substrate in the fourth processing chamber lion. Upon completion, the second organic material is deposited on the third base & ιι〇. Subsequently, when the first and second organic materials are deposited on the third substrate (10), the process of the upper substrate is completed, the third substrate 11G&quot; is transferred to the second load lock chamber 32 and unloaded by the robot arm 26 or 26. At this time, the deposition process of the third substrate 110", that is, the deposition processes performed in the third and fourth process chambers 70a and 700b, can be performed simultaneously with the deposition processes performed on the plates 110 and 11〇1. The physicochemical so that the deposition process for the three substrates according to the third embodiment of the present invention can be performed simultaneously so that the waiting time in the respective chambers can be shortened and the productivity and yield can be increased and maximized 24 201100576 although the present invention The present invention has been described in connection with certain exemplary embodiments, but it is understood that the invention is not limited to the specific embodiments disclosed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically showing an apparatus configuration for depositing an organic material according to a first embodiment of the present invention; FIGS. 2A to 2D are diagrams illustrating the present invention. A view of a method of depositing an organic material using the apparatus of FIG. 1 in the first embodiment; FIG. 3 is a view illustrating deposition of an organic layer according to a second embodiment of the present invention 4A to 4D are views for explaining a method of depositing an organic material using the apparatus of FIG. 3 according to the second embodiment of the present invention; and FIG. 5 is an organic according to a third specific example of the present invention. Material deposition system example = intentional block diagram, the system includes a second concrete organic material deposition apparatus according to the present invention. [Main element symbol description] 10: Organic material deposition system 20: Transfer chamber 22: Main body 24: Wear Part 26: Robot arm 25 201100576 26·: Robot arm 30: Load lock chamber 32: Load lock chamber 40: Mask unit 100: Chamber 102: First side 104: Second side 110: First substrate 110丨. Second substrate 110&quot;: third substrate 120: mask pattern 200: first substrate alignment - early 210: second substrate alignment - early 300: organic material deposition source 400: deposition source holding unit 410: angle limit Board 500: Transfer unit 510: First transfer unit 512: Holder 520: Second transfer unit 522: Holder 600: a chamber 600A: 600B processing chamber: the processing chamber 26 201100576 700a: treatment chamber 700B: treatment chamber A: a first substrate deposition area B: a second substrate deposition zone L1: length L2: length

Claims (1)

201100576 七、申請專利範圍: 1·一種沉積設備,其包含: 一具有一分成一第一基板沉積區及一第二基板沉積區 之内部的腔室; 一轉移至該第一及該第二基板沉積區中之一者中以將 有機材料粒子喷灑於第一及第二基板中之各別一者上的有 機材料沉積源;及 一在一第一方向上將該有機材料沉積源自該第一及該 第二基板沉積區中之-者旋轉至該第—及該第二基板沉積 區中之另一者的第一轉移單元。 2·如申請專利範圍第“員之設備,其進一步包含使該有 機材料沉積源在該第-及該第二基板沉積$中之—者中在 —第二方向上往復運動之第二轉移單元。 3.如申請專利範圍第μ之設備,其進一步包人. -位於該第-基板沉積區中以使自一外部轉移: —基板對準的第一基板對準單元;及 X -位於該第二基板沉積區中以使自該 二基板對準的第二基板對準單元。 移之该第 4·如申請專利範圍第μ之設備,其中該 區及該第二基板沉積區在—與該第一:板沉積 上延伸。 父又之弟二方向 5. 如申請專利範圍第 源為一線性沉積源。 6. 如申請專利範圍第 1項之設備,其中該有機材料 沉積 1項之設備,其中 該腔室 之主體為 28 201100576 一多邊形容器,其相鄰於該第一轉移單元之一第一側面較 長於在該第一側面對面之—第二側面。 7. 如申請專利範圍第6項之設備,其中該第一及該第二 基板經由该腔室之該第二側面進入及離開該腔室。 8. —種沉積有機材料之方法,其包含: 將一第一基板轉移至一個腔室之一第一基板沉積區中 且在該第一基板上進行—對準製程; ◎ 在70成該第一基板上之該對準製程後,將一沉積源轉 移至該第一基板沉積區中以在該第—基板上進行一沉積製 程; 在於該第一基板上進行該沉積製程的同時,將一第二 基板轉移至該腔室之-第二基板沉積區中且在該轉移之第 一基板上進行一對準製程; 當完成該第一基板上之該沉積製程及該第二基板上之 該對準製程時’藉由使該沉積源在—第一方向上旋轉而將 〇該沉積源轉移至該第二基板沉積區;及 將該沉積源轉移至該第二基板沉積區中以在該第二基 板上進行該沉積製程。 * 9.如申請專利範圍第8項之方法,其進一步包含在針對 該=二基板進行該沉積製程的同時將—第三基板轉移至該 腔室之該第-基板沉積區中且針對該第三基板進行一對準 製程。 10. —種設備,其包含: —具有一分成一第一基板沉積區、一等待區及一第二 29 201100576 基板沉積區之内部的腔室; •外部轉移之第 外部轉移之第 一位於一第一基板沉積區中以使 一基板對準的第一基板對準單元 位於一第二基板沉積區中以使一自 基板對準的第二基板對準單元 至少一個將有機材料粒子噴灑於該第— 中之-者上的有機材料沉積源;纟 〜第二基板 元。一在—第—方向上轉移該有機材料沉積源之轉移單 η·如申請專利範圍第10項之設備,其進_步包含: 一固持該有機材料沉積源之沉積源固持單元丨及3 制板。配置於該沉積源固持單元之-上部外壁上的角度限 積巴12=:專利範圍第10項之設備,其中該第-基板沉 上= ㈣:基板沉積區配置成在㈣一方向 上延伸之一直線。 13.—種沉積有機材料之方法,其包含: 在將-第-基板自一外部轉移至—腔室之一第一 沉積區中及在基板上進行—對準製程的同時,月;— 礼積源置於該腔室之—等待區中; $完成針對該第_基板之該對準製程後,藉由將位於 :腔室之該等待區中的沉積源轉移至該第一基板沉積區中 而針對該第一基板進行一沉積製程; 將一第二基板自—外部轉移至一第二基板沉積區中且 30 201100576 針對該第二基板進行一對準製程; 自該對該第一基板之該沉積製程後’將該沉積源 土板〉儿積區轉移回該腔室之該等待區中;及 在完成針對該第二基板 該腔室* &quot;&quot;之4對準製以,藉由將位於 而針對積源轉移至該第二基板沉積區中 亥第—基板進行一沉積製程。 14.如申請專利範圍第η Ο ❹ 基板進行該沉積製程的同時針對二法針對該第-程。 τ對°亥第一基板進竹該對準製 =請專利範圍第13項之方法,其進—步包含: 自兮①、该第一基板上之該沉積製程後,將該第一美拓 自該腔室之兮楚_ « 第基板 μ第—基板沉積區轉移至該外部;及 積區Γ第三基板自該外部轉移至該腔室之該第—基板沉 16.一種沉積系統,其包含: 複數個有機材料沉積設備; 連接該複數個有機材料沉積設備 -裝载及/或卸载穿過該轉移室 ,及 備中之基板的裝載 有機材料沉積設 包含-第-有二積=該:數個有機材料沉積設備 一沉積製程且在料 〃針對至少兩個基板進行 仕對”亥至少兩個基板中之至 製程的同時針對該至少兩個基板中者進行沉積 準製程。 考進行轉移及對 17.如申晴專利範 圍第16項之系統,其中該複數個有機 31 201100576 材料沉積設備進一步包含一依序針對單個基板進彳一轉移 製程、-對準製程及一沉積製程之第二有機材料^二備。 18.如申請專利範圍帛i&quot;之系統,#中該第一有又機材 料沉積設備包含: -具有-分成-第-基板沉積區及—第二基板沉積區 之内部的腔室; 一轉移至該第一及該第二基板沉積區中之—者中以將 有機材料粒子喷灑於第一及第二基板中之各別一者上的有 機材料沉積源;及 ^ 在一第一方向上將該有機材料沉積源自該第一及該 第二基板沉積區中之一者旋轉至該第一及該第二基板沉積 區中之另一者的轉移單元。 士申明專利範圍第丨8項之系統,其中該腔室為一多 f形容器相鄰於該第-轉移翠元之一第一側面較長於 在該第-側面對面之—第二側面。 —20.如申請專利範圍帛19項之系统,其中該第一及該第 、-n由該腔至之該第二側面進入及離開該腔室。 八、圖式: (如次頁) 32201100576 VII. Patent application scope: 1. A deposition apparatus comprising: a chamber having a first substrate deposition region and a second substrate deposition region; a transfer to the first and second substrates An organic material deposition source for spraying organic material particles on each of the first and second substrates in one of the deposition regions; and depositing the organic material in a first direction And rotating the first and the second substrate deposition regions to the first transfer unit of the other of the first and second substrate deposition regions. 2. The apparatus of claim 1, wherein the apparatus further comprises a second transfer unit that reciprocates in the second direction in the deposition of the organic material deposition source in the first and the second substrate deposition amount 3. The apparatus of claim [51] further encapsulating. - located in the first substrate deposition zone for external transfer: - a first substrate alignment unit aligned with the substrate; and X - located Aligning the second substrate in the second substrate deposition region with the second substrate aligned with the two substrates. The apparatus of the fourth aspect of the invention, wherein the region and the second substrate deposition region are in- The first: the plate is deposited on the extension. The father is the second direction of the parent. 5. The source of the patent application is a linear deposition source. 6. The device of claim 1, wherein the organic material is deposited with one device. Wherein the body of the chamber is a 28 201100576 polygonal container adjacent to the first side of the first transfer unit that is longer than the second side opposite the first side. 7. As claimed in claim 6 Equipment, its The first and the second substrate enter and leave the chamber through the second side of the chamber. 8. A method of depositing an organic material, comprising: transferring a first substrate to one of the chambers Performing an alignment process in the first substrate deposition region and on the first substrate; ◎ transferring the deposition source to the first substrate deposition region after 70% of the alignment process on the first substrate Performing a deposition process on the first substrate; transferring a second substrate to the second substrate deposition region of the chamber and on the transferred first substrate while performing the deposition process on the first substrate Performing an alignment process; when the deposition process on the first substrate and the alignment process on the second substrate are completed, 'the deposition source is transferred by rotating the deposition source in the first direction To the second substrate deposition region; and transferring the deposition source to the second substrate deposition region to perform the deposition process on the second substrate. * 9. The method of claim 8 further comprising In the case of the = two substrates The deposition process simultaneously transfers the third substrate into the first substrate deposition region of the chamber and performs an alignment process for the third substrate. 10. An apparatus comprising: - having a division into a first a substrate deposition region, a waiting region, and a chamber inside the second 29 201100576 substrate deposition region; and a first portion of the external transfer first external transfer in a first substrate deposition region to align a substrate The substrate aligning unit is located in a second substrate deposition region such that a second substrate aligning unit aligned from the substrate at least one organic material deposition source for spraying organic material particles on the first substrate; a second substrate element, wherein the transfer device of the organic material deposition source is transferred in the -first direction, as in the device of claim 10, the method further comprises: a deposition source holding the deposition source of the organic material Unit 丨 and 3 boards. An angle limiting block disposed on the upper outer wall of the deposition source holding unit 12: The apparatus of claim 10, wherein the first substrate sinks = (4): the substrate deposition region is configured to extend in a straight line on the (four) side . 13. A method of depositing an organic material, comprising: transferring a -th substrate from an exterior to a first deposition zone of a chamber and performing a alignment process on the substrate; The accumulation source is placed in the waiting region of the chamber; after the alignment process for the _ substrate is completed, the deposition source located in the waiting region of the chamber is transferred to the first substrate deposition region And performing a deposition process on the first substrate; transferring a second substrate from the outside to a second substrate deposition region; and 30 201100576 performing an alignment process on the second substrate; After the deposition process, 'the deposition source earth plate> is transferred back into the waiting area of the chamber; and after completing the alignment of the chamber for the second substrate, A deposition process is performed by transferring the source to the second substrate deposition region. 14. If the substrate is subjected to the deposition process as claimed in the patent application, the second process is directed to the first process. τ ° 第一 第一 第一 第一 第一 第一 第一 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = From the chamber _ « the first substrate μ-substrate deposition region is transferred to the outside; and the third substrate from the external region is transferred from the outside to the first substrate sink of the chamber 16. A deposition system The method comprises: a plurality of organic material deposition apparatuses; connecting the plurality of organic material deposition apparatuses - loading and/or unloading through the transfer chamber, and loading the organic material deposition substrate of the substrate to include - first - two products = Depositing a plurality of organic material deposition apparatuses and depositing a quasi-process for the at least two substrates while performing at least two substrates on at least two substrates. The system of claim 16, wherein the plurality of organic 31 201100576 material deposition apparatus further comprises a sequential transfer process for a single substrate, an alignment process, and a deposition The second organic material of the process is prepared. 18. According to the system of patent application 帛i&quot;, the first organic material deposition apparatus includes: - a - divided - a - substrate deposition area and - a second substrate a chamber inside the deposition zone; an organic material transferred to the first and second substrate deposition regions to spray organic material particles onto each of the first and second substrates And depositing the organic material in a first direction from one of the first and second substrate deposition regions to the other of the first and second substrate deposition regions The system of claim 8, wherein the chamber is a multi-f-shaped container adjacent to one of the first side of the first-transitional tier, and the second side is longer than the first side--the second The system of claim 19, wherein the first and the first, -n, enter and leave the chamber from the cavity to the second side. VIII. ) 32
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