TW201109989A - Readout apparatus for current type touch panel - Google Patents
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201109989201109989
^-0010-TW 31167twf.doc/n 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種觸控裂置, 電流式觸控面板的讀取裝置。 【先前技術】^-0010-TW 31167twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a touch splicing, current type touch panel reading device. [Prior Art]
隨著電子技術的蓬勃發展,以及無線通訊與網路的普 及化,各式各樣的電子裝置逐漸成為生科可或缺的工 具。然而’-般常見的輸入與輸出(input/〇utpm,i/〇)界面, 像是鍵盤或是滑鼠,具有相當程度的操作_。相形之下, 觸控面板是-種直觀、簡單的輸人與輪出界面。因此,觸 控面板常被應用作為人與電子裝置之_人機界面, 行控制。With the rapid development of electronic technology and the universalization of wireless communication and networks, various electronic devices have gradually become a tool for students. However, the common input and output (input/〇utpm, i/〇) interface, such as a keyboard or mouse, has a considerable degree of operation. In contrast, the touch panel is an intuitive and simple input and exit interface. Therefore, the touch panel is often used as a human-machine interface for human and electronic devices.
且特別是有關於一種 一般來說,觸控面板可以分為電阻式觸控面板、光學 式觸控面板、電谷式觸控面板等。若依讀取(read〇ut)手段, 則可分為電流式觸控面板(current type touch panei)與電荷 式觸控面板(charge type touch panel)等。圖1說明電流式觸 控面板與傳統讀取電路(readout circuit)的示意圖。觸控面 板H0的多條掃描線(scan line)是由閘極驅動器(gate driver) 130所驅動,而觸控面板11()的多條感測線(sens〇r丨^)則 耦接至讀取電路140。傳統電流式觸控面板的像素佈局 (pixel layout)如圖1所示。每一個像素各自具有開關SW1 與光電晶體(photo transistor) PT。 201109989 ruvi-zwy-OO 10-T W 31167twf.doc/n 當偏壓電壓(bias voltage) VBIAS高過節點A的電壓, 且閘極驅動器130經由掃描線導通(turn on)開關SW1時, 由於光電晶體PT處於順向偏壓狀態,使得一感測電流Is 會經由光電晶體PT、開调SW1而流至感測線。其中,-光 電晶體PT的受照光強度會影響感測電流Is的大小。也就 是說’利用讀取電路140去檢測各個感測線上感測電流Is 的大小與差異,可以知道觸控面板110中對應位置有無遮 光物(也就是有無外物去觸碰面板110)。讀取電路140會將 檢測結果以數位碼形式送給影像處理電路(image processing circuit) 150。影像處理電路150便依據所有讀取 電路140所提供的數位碼來進行觸摸位置的判定。 傳統讀取電路140是使用積分器(即運算放大器mi與 回授電容142)將感測電流is轉換為對應電壓,然後再由類 比至數位轉換器(analog-to-digital converter,ADC) 143 將此 電壓轉換成對應數位碼,最後由影像處理電路150依據此 數位碼來進行觸摸位置的判定。然而,由於使用積分器進 =觸控面板110的讀取操作,若是感測電流15過大,則積 刀器的輸出可能會到達飽和(saturation)。為了避免積分器 2輸出到達飽和,故積分器的回授電容(或稱積分電容)刀二 ,須隨之增加電容量(即增加面積)。由於觸控面板 的母—條感測線各自需要一個積分器,因此讀取電路 的晶片面積將會很可觀。 201109989In particular, the touch panel can be classified into a resistive touch panel, an optical touch panel, an electric valley touch panel, and the like. According to the reading method, it can be classified into a current type touch panei and a charge type touch panel. Figure 1 illustrates a schematic diagram of a galvanic touch panel and a conventional readout circuit. The plurality of scan lines of the touch panel H0 are driven by a gate driver 130, and the plurality of sensing lines (sens〇r丨^) of the touch panel 11() are coupled to the read. Take circuit 140. The pixel layout of a conventional current touch panel is shown in FIG. Each of the pixels has a switch SW1 and a photo transistor PT. 201109989 ruvi-zwy-OO 10-TW 31167twf.doc/n When the bias voltage VBIAS is higher than the voltage of the node A, and the gate driver 130 turns on the switch SW1 via the scan line, due to the photonic crystal The PT is in a forward bias state such that a sense current Is flows to the sense line via the photo transistor PT and the SW1 switch. Among them, the intensity of the received light of the photo-electric crystal PT affects the magnitude of the sensing current Is. That is to say, the reading circuit 140 is used to detect the magnitude and difference of the sensing current Is on each sensing line, and it can be known whether there is a corresponding object in the touch panel 110 (that is, whether there is a foreign object touching the panel 110). The read circuit 140 sends the detection result to the image processing circuit 150 in digital form. The image processing circuit 150 determines the touch position based on the digital code provided by all of the read circuits 140. The conventional read circuit 140 converts the sense current is to a corresponding voltage using an integrator (ie, an operational amplifier mi and a feedback capacitor 142), and then an analog-to-digital converter (ADC) 143 The voltage is converted into a corresponding digital code, and finally the image processing circuit 150 determines the touch position based on the digital code. However, due to the read operation of the touch panel 110 using the integrator, if the sense current 15 is too large, the output of the combiner may reach saturation. In order to prevent the integrator 2 output from reaching saturation, the inductive capacitor (or integrating capacitor) of the integrator must increase the capacitance (ie increase the area). Since the mother-strip sensing lines of the touch panel each require an integrator, the wafer area of the read circuit will be considerable. 201109989
y-0010-TW 31167twf.doc/n 【發明内容】 本發明提出一種電流式觸控面板的讀取裝置,包括電 流至電壓轉換單元(current-to-voltage converter)、電墨增益 單元以及類比至數位轉換器(analog-to-digital converter)。 電流至電壓轉換單元將電流式觸控面板的感測電流轉換為 感測電壓。電壓增益單元的輸入端耦接至電流至電壓轉換 單元的輸出端以接收該感測電壓。類比至數位轉換器的輪 入端耦接至電壓增益單元的輸出端,該類比至數位轉換器 的輸出端產生·一數位碼。 在本發明之一實施例中,上述之電流至電壓轉換單元 包括電阻以及單位增益放大器。電阻的第一端接收該感測 電流,而電阻的第二端耦接至一參考電壓。單位增益放大 器的輸入端_至電_第—端’而單位增益放大器 出端搞接至該電塵增益單元的輸入端。Y-0010-TW 31167twf.doc/n SUMMARY OF THE INVENTION The present invention provides a current touch panel reading device including a current-to-voltage converter, an ink gain unit, and an analogy to Analog-to-digital converter. The current to voltage conversion unit converts the sensing current of the current touch panel into a sensing voltage. An input of the voltage gain unit is coupled to an output of the current to voltage conversion unit to receive the sense voltage. The analog input to the digital converter is coupled to the output of the voltage gain unit, and the analog to the output of the digital converter produces a digital code. In an embodiment of the invention, the current to voltage conversion unit includes a resistor and a unity gain amplifier. The first end of the resistor receives the sense current, and the second end of the resistor is coupled to a reference voltage. The input of the unity gain amplifier is _ to the power_th-end' and the output of the unity gain amplifier is connected to the input of the dust gain unit.
—貫施例中,上述之電流至電壓轉換單元 ^电阻以及電流鏡。電阻的第—端接收第―參考電壓, 電阻的第二端祕錢碰增 收該感測電流,而電流鏡的僕電^ 置,利用料至電^^式觸心板的_ 大器或非反相放大器=二=益,如反㈣ 免使用_容,達成_ 流,因此可避 201109989- In the example, the above current to voltage conversion unit ^ resistance and current mirror. The first end of the resistor receives the first reference voltage, and the second end of the resistor touches the sensing current, and the current mirror is used to make the _ large or non-electrical device Inverting amplifier = two = benefit, such as anti (four) free use _ capacity, reach _ flow, so avoid 201109989
Hm-zuuy-uO 10-TW 31167twf.doc/n 為讓本發明之上述特徵和優點 舉實施例,並配合所附圖式作詳細說易懂’下文特 •【實施方式】 …… 以下實施例將以光學電流式 咖触吐_1)110為例,說明太^面板(浊〇切_邮 方式。然而,本發明二之讀取裝置的應用 式觸控面板均可以依據本說明書的教示㈣用之。了⑽ 取據ί發明實施例說明—種電流式觸控面板讀 拖ΐ 。此讀取裝置包括電流至電壓轉 換早凡训、電壓增益單元22G以及類比 j 流至電壓轉換單元21G將電流式觸控面板 測电/肌Is轉換為感測電壓Vs。電壓增益單元22〇的輸入 端耦接至電流至電壓轉換單元21〇的輸出端以接收感^電 壓Vs。電壓增益單元220在增益(gain)此感測電壓Vs後, 輸出對應的增益電壓Vg給類比至數位轉換器23〇。前述電 壓增益單元220可以是反相放大器(inverting amplifie]r) = 疋非反相放大器(Hon-inverting amplifier),其細節將於後文 詳述之。 類比至數位轉換器230的輸入端耦接至電壓增益單元 220的輸出端。類比至數位轉換器230將增益電壓Vg轉換 為對應的數位碼Ds。此數位碼Ds可以提供給後級電路(例 如影像處理電路15〇)進行進一步的資料處理,以判定觸控 面板110中的觸摸位置。 y-0010-TW 31167twf.doc/n 201109989 士圖3是依據本發明第一實施例說明一種電流式觸控面 板項取裝置的電路示意圖。請參照圖3,在此是以反相敌 大器來實現前述電壓增益單元22〇。此反相放大器包括電 阻‘22卜電阻222以及運算放大器223。電阻221的第一端 =為反相放大器的輸入端,而電阻221的第二端耦接至運 算放大器223的第一輸入端。電阻222的第一端與第二端 分別耦接至運算放大器223的第一輸入端與輸出端。運曾 放大器223的第二輸入端接收第三參考電壓Vref,而運曾 放大器223的輸出端作為該反相放大器的輸出 = 施例中,運算放大器223的第—輸人端為反相 (mvertmg input),而運算放大器223的第二輸入端為非 反相輸入端(n〇n-inverting input)。另外,應用本實施 者可以視其設計需求而決定參考電壓Vref的準位。例如 將參考電壓Vref設定為接地電壓(即〇v),或是設定為处慨 隙電壓(band-gap voltage),或是設定為+5V,或是設定: 他固定電壓。本實施娜參考電壓Vfef設定為雷厭 VDDA準位的”半(即VDDA/2)。 圖3中的電流至電壓轉換單元21〇包括電阻21丨。 阻211的第一端接收感測電流Ise電阻211的第—端耦電 至J相放大器的輸入端(即電阻221的第一端),而電随= 的第二端耦接至參考電壓(例如接地電壓)。由觸控面抜1 提供的感測電流Is會通過電阻211,因此會在電阻u 1 第一端產生感測電壓Vs。若感測電流Is的變化量後的 為了此夠分辨增盃電壓Vg的變化,則可以增加電阻 201109989 nm-心〜010-TW 3U67twf.doc/n 221與222的電阻值。圖3中所繪示的電阻21^2^與222 是定電阻器。為了因應不同觸控面板的不同特性,應用本 實施例者可以視其設計需求而改以「可變電阻」實現電阻 211、221 與/或 222。. 圖4是依據本發明第二實施例說明一種電流式觸控面 板讀取裝置的電路示意圖。此實施例與圖3相似,故部分 内容便不再贅述。二者不同的地方在於電流至電壓轉換單 元210。請參照圖4,電流至電壓轉換單元21〇包括電阻 211與單位增益放大器。在此是以運算放大器212實現單 位增益放大器。運算放大器212的第一輸入端耦接至電阻 211的第一端,運算放大器212的第二輸入端耦接至運算 放大器212的輸出端,而運算放大器212的輸出端耦接^ 反相放士器的輸入端(即電阻的第一端)。在本實施例 運算放大器212的第-輪入端為非反相輸人端,而運 异放大裔212的第二輸入端為反相輸入端。由於在電流至 電壓轉換單元21〇配置了單位增益放大器,因此可以避免 感測電壓Vs發生負載效應。 若感測電流Is的變化量很小,為了使增益電麼的 變化能夠分辨’除了增加圖3與圖4中電阻211、221盘 222的電阻值外,也可以在電壓增益單^ 22()内多串幾個 反相放大器’以便讓增益單元22。的增益倍率更高。 巧如’圖5疋依據本發明第三實施例說明圖2中電壓货益 單元220的電路示意圖。 曰皿 31167twf.doc/n 2011099897._.tw 請參照圖5,反相放大器(電壓增益單元22〇)包括打個 反相放大電路510-1〜51〇_n ^這些反相放大電路 510-1〜510-n相互串接而形成放大器串。該放大器串中的第 一個反相放大電路510-1的輸入端耦接至電流至電壓轉換 單元210的輸出端以接收感測電壓Vs,而該放大器串中的 最後二個反相放大電路51〇-n的輸出端耦接至類比至數位 轉換态230的輸入端。上述反相放大電路的 實現方式可以參照圖3中有關「反相放大器」的相關說明, 故不j此贅述。由於在電壓增益單元22G内串聯多個反相 放大器(即反相放大電路510-1〜5ι〇_η),因此電塵增益單元 220的增益倍率得以提升。 θ 圖6是依據本發明第四實施例說明一種電流式觸控面 板讀取裝置的電路示意圖。此實施例與圖3相似,故部分 内容便不再賢述。二者不同的地方在於圖6是以非反相放 =實現前述電壓增益單元22〇。此非反相放大器包括 =放大器224、電阻225與電阻226。運算放大器224 輸入端減至電流至電壓轉換單元210的輸出端以 ^感測電壓Vs’運算放大器224的輸出端輸出增益電壓 g類比至數位轉換器23〇的輸入端。電阻226的第一端 接!^運异放大斋224的第二輸入端,電阻226的第二端 =收4考電壓(例如接地電壓)。電阻225的第一端與第二 輕接至運异放大器224的第二輸入端與輸出端。在 ^例中’運异放大器224的第—輸人端為非反相輸入 I而運算放大器224的第二輸入端為反相輪入端。在另 201109989 ηινι-ζυυν-υΟ 10-TW 31167twf.docAi -實施例中,圖6所纟t示的電壓增益料22()與類比 位轉換斋23〇之間可以依照設計需求而配 相器(未繪示)。 丨夕個反 應用本發明者可以視其設計需求,·雖何方 圖6的電流至電壓轉換單元21〇。例如,除了圖3盘^ 所示電流至電壓轉換單元21〇的實現方式之外,也可以 用電阻與電流鏡來實現電流至電壓轉換單元MO。在另〜 實施例中’電壓增益單元22G内部的非反相放大器包括 個非反減大電路。這齡反減大電路相 放大器串。該放大器串中的第一個非反相放大電路的輸^ 端耦接至電流至電_換單元21G的輸 該放大器串中的最後一個非反相放大電路的= ^接至類比至數位轉換器23〇的輸人端。上述放大器串的 實現方式可以參照w 5,也就是將圖5 +反相放大電路 510-1〜510·η代換為非反相放大電路即可。 圖7是依據本發明第五實施例說明圖2中電流至電壓 轉Ϊ單元210的電路示意圖。電流至電壓轉換單元210包 括電阻710與電流鏡720。電阻710的第一端接收第—參 考電壓(例如系統電壓VDDA),而電阻710的第二端耦接 至電壓增益單元220的輸入端。在此是以ρ通道金氧半 (PMOS)電晶體711實現電阻71〇,以減少電阻71〇 丨丨σ日日 片面積。電晶體711的第一端(例如源極)接收系統電壓 VDDA ’而電晶體711的第二端(例如汲極)與控制端(例如 閘極)耦接至電壓增益單元220的輸入端。 201109989— 31167twf.doc/n 電流鏡720的主電流端接收感測電流Is,而電流鏡72〇 的僕電流端耗接至電阻710的第二端。藉由設定電流鏡72〇 的主電流端與僕電流端二者的電流倍率,電流鏡72〇可以 將微弱的感測電流Is放大。此放大的感測電流會經由電阻 710而轉換為感測電壓vs。如此,在強光與弱光照射光電 晶體PT的條件下,所獲得感測電壓Vs的變化幅度可以加 大,因此可以增加感測電壓Vs的辨識度。此感測電壓Vs 再經由反相放大器/非反相放大器(即電壓增益單元22〇)作 二次放大而獲得增益電壓Vg’以利於後續電路進行處理。 在此電流鏡720包括第一電晶體721以及第二電晶體 722。本實施例是以N通道金氧半(NM0S)電晶體實現^晶 體721以及722。電晶體721的第一端(例如汲極)作為電= 鏡720的主電流端’電晶體721的第二端(例如源極)接= 第二參考電壓(例如接地電壓),而電晶體721的控制端(例 如閘極)耦接至電晶體721的第一端。電晶體722的第—端 作為電流鏡720的僕電流端,電晶體722的第二端接收第 二參考電壓(接地電壓)’而電晶體722的控制端耦接至電 晶體721的控制端。透過決定電晶體721與722的外觀比, 可以設定電流鏡720的主電流端與僕電流端二者的電流倍 率。 圖8是依據本發明第六實施例說明圖2中電流至電壓 轉換單元210的電路示意圖。此實施例與圖7相似,故部 分内容便不再贅述。二者不同的地方在於圖8是採用電流 鏡730來代替前述電流鏡720。電流鏡730包括第—電晶 11 201109989 nm.zuvy^OlO-TW 31167twf.doc/n 7t 士弟二電晶體732、第三電晶體733以及第 734。電晶體731的第一端(例如没極==四電晶體 電^端’而電晶體731的控制端(例如間^730的主 73J的第一端。.電晶體732的第一 )耦接至電晶體 730的僕電流端,而電晶體732的端=)作為電流鏡 電晶體別的控制端。電晶體733工^開峨接至 ,晶體m的第二端(例 =沒峨 W例如源極)接收參考健(例如接;日體733的第二 的控制端(例如間極)鱗至電晶體 而電晶體733 734的第一端(例如沒_接至電晶體。電晶體 源極),電晶體734的第二 曰體732的弟二端(例如 電壓),而電晶體734的”_ ^ )接收參考電麗(接地 的控制端。 控㈣(例如閘極)耦接至電晶體733 測線控面板11G的開關SW1為截止時,成 第230將增益電壓&的 感測線上出現感測7的_奶為導通時, 至電壓轉換單元-二二器 並轉換為成增益電壓 二數位值取出。系絲ί ^ Γ將增益電壓Vg的第 差值。由〇〖。异第二數位值與第一數位值的 於強先與弱光照射光電晶體ΡΤ所產生的感測電 12 y-0010-TW 31167t\vf.doc/n 201109989 流Is會有差異,因此前述差值也會有所不 、、— 位出觸碰的位置。 雖然本發明已以實施例揭露如上,然其並非用以限定 本發明’任何所屬技術領域中具有通常知識者在不^離 本發明之精神和範圍内,當可作些許之更動與潤飾,故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1說明電流式觸控面板與傳統讀取電路(此“〇说 circuit)的示意圖。 圖2是依據本發明實施例說明一種電流式觸控面板讀 取裝置的電路示意圖。 圖3是依據本發明第一實施例說明—種電流式觸控面 板讀取裝置的電路示意圖。 一圖4是依據本發明第二實施例說明一種電流式觸控面 板項取裝置的電路示意圖。 圖5是依據本發明第三實施例說明圖2中電壓增益單 元的電路示意圖。 电曰挪 圖6是依據本發明第四實施例說明一種電流式觸控面 板讀取裝置的電路示意圖。 现" 圖7是依據本發明第五實施例說明圖2中電流至電壓 轉換單元的電路示意圖。 抓 圖8是依據本發明第六實施例說明圖2中電流至電壓 轉換單元的電路示意圖。 13 201109989 HM-2Uuy-u010-TW 31167twf.doc/n 【主要元件符號說明】 110 :觸控面板 130:閘極驅動器 14Ό、200 :讀取電路 - -‘ 、 141、212、223、224 :運算放大器 142 :回授電容 143、230 :類比至數位轉換器 150 :影像處理電路Hm-zuuy-uO 10-TW 31167twf.doc/n The above-mentioned features and advantages of the present invention are described in detail with reference to the accompanying drawings. Taking the optical current type _1 ) _1) 110 as an example, the description will be given to the panel (the turbid 〇 _ _ mail mode. However, the application touch panel of the reading device of the second invention can be based on the teachings of the present specification (4) (10) According to the embodiment of the invention, a current type touch panel read and drag. The reading device includes a current to voltage conversion, a voltage gain unit 22G, and an analog j flow to the voltage conversion unit 21G. The current touch panel power measurement/muscle Is is converted into the sensing voltage Vs. The input end of the voltage gain unit 22A is coupled to the output of the current to voltage conversion unit 21A to receive the sense voltage Vs. The voltage gain unit 220 is After the gain voltage Vs is gained, the corresponding gain voltage Vg is outputted to the analog converter 23. The voltage gain unit 220 can be an inverting amplifier (inverting amplifie) r) = 疋 non-inverting amplifier (Hon -inverting amplifier) The details of the analog-to-digital converter 230 are coupled to the output of the voltage gain unit 220. The analog-to-digital converter 230 converts the gain voltage Vg into a corresponding digital code Ds. The code Ds can be provided to a subsequent stage circuit (for example, the image processing circuit 15A) for further data processing to determine the touch position in the touch panel 110. y-0010-TW 31167twf.doc/n 201109989 Figure 3 is based on this The first embodiment of the invention describes a circuit diagram of a current touch panel item picking device. Referring to FIG. 3, the voltage gain unit 22 is implemented by a reverse phase enemy device. The inverting amplifier includes a resistor '22. The first end of the resistor 221 is the input end of the inverting amplifier, and the second end of the resistor 221 is coupled to the first input end of the operational amplifier 223. The first end of the resistor 222 and the first end The two ends are respectively coupled to the first input end and the output end of the operational amplifier 223. The second input end of the amplifier 223 receives the third reference voltage Vref, and the output of the amplifier 223 serves as the reverse phase. The output of the amplifier = in the embodiment, the first input terminal of the operational amplifier 223 is inverted (mvertmg input), and the second input terminal of the operational amplifier 223 is a non-inverting input (n〇n-inverting input). In addition, the application may determine the level of the reference voltage Vref according to the design requirements thereof, for example, setting the reference voltage Vref to the ground voltage (ie, 〇v) or setting the band-gap voltage. Or set to +5V, or set: He fixed the voltage. The present reference voltage Vfef is set to "half (ie, VDDA/2) of the VDDA level. The current-to-voltage conversion unit 21A of Figure 3 includes the resistor 21A. The first end of the resistor 211 receives the sensing current Ise The first end of the resistor 211 is coupled to the input end of the J-phase amplifier (ie, the first end of the resistor 221), and the second end of the electric-coupled = is coupled to a reference voltage (eg, a ground voltage). The sensing current Is is supplied through the resistor 211, so that the sensing voltage Vs is generated at the first end of the resistor u 1 . If the amount of change in the current Is is sensed, the change of the cup voltage Vg can be increased for this purpose. Resistance 201109989 nm-heart ~010-TW 3U67twf.doc/n 221 and 222 resistance values. The resistors 21^2^ and 222 shown in Figure 3 are fixed resistors. In order to respond to different characteristics of different touch panels, Those skilled in the art can implement the resistors 211, 221 and/or 222 with "variable resistors" depending on their design requirements. Fig. 4 is a circuit diagram showing a current type touch panel reading device according to a second embodiment of the present invention. This embodiment is similar to that of Fig. 3, so some of the contents will not be described again. The difference between the two is the current to voltage conversion unit 210. Referring to FIG. 4, the current-to-voltage conversion unit 21A includes a resistor 211 and a unity gain amplifier. Here, the unit amplifier is implemented by the operational amplifier 212. The first input end of the operational amplifier 212 is coupled to the first end of the resistor 211, the second input end of the operational amplifier 212 is coupled to the output end of the operational amplifier 212, and the output end of the operational amplifier 212 is coupled to the opposite phase. The input of the device (ie the first end of the resistor). In the present embodiment, the first-in terminal of the operational amplifier 212 is a non-inverting input terminal, and the second input terminal of the operational amplifying body 212 is an inverting input terminal. Since the unity gain amplifier is configured in the current to voltage converting unit 21, the load effect of the sensing voltage Vs can be avoided. If the amount of change in the sense current Is is small, in order to make the change of the gain can be distinguished, 'in addition to increasing the resistance values of the resistors 211 and 221 of the resistors 211 and 221 in FIG. 3 and FIG. 4, the voltage gain can also be obtained in the voltage gain unit (22). Multiple strings of inverting amplifiers are included in series to allow gain unit 22. The gain ratio is higher. BRIEF DESCRIPTION OF THE DRAWINGS A circuit diagram of the voltage benefit unit 220 of Fig. 2 is illustrated in accordance with a third embodiment of the present invention. Referring to FIG. 5, the inverting amplifier (voltage gain unit 22A) includes an inverting amplifying circuit 510-1~51〇_n^ these inverting amplifying circuits 510- 1 to 510-n are connected in series to form an amplifier string. An input end of the first inverting amplifying circuit 510-1 of the amplifier string is coupled to an output of the current to voltage converting unit 210 to receive the sensing voltage Vs, and the last two inverting amplifying circuits in the amplifier string The output of 51〇-n is coupled to the analog to digital input 230 input. For the implementation of the above-mentioned inverting amplifying circuit, reference may be made to the related description of the "inverting amplifier" in Fig. 3, and therefore it will not be described here. Since a plurality of inverting amplifiers (i.e., inverting amplifying circuits 510-1 to 5ι〇_η) are connected in series in the voltage gain unit 22G, the gain magnification of the electric dust gain unit 220 is improved. θ Figure 6 is a circuit diagram showing a current type touch panel reading device according to a fourth embodiment of the present invention. This embodiment is similar to that of Figure 3, so some of the content will not be described. The difference between the two is that FIG. 6 implements the aforementioned voltage gain unit 22 by non-inverting discharge. This non-inverting amplifier includes = amplifier 224, resistor 225 and resistor 226. The input of the operational amplifier 224 is reduced to the output of the current-to-voltage conversion unit 210 to sense the voltage Vs'. The output of the operational amplifier 224 outputs a gain voltage g analogy to the input of the digital converter 23A. The first end of the resistor 226 is connected to the second input of the differential amplifier 224, and the second terminal of the resistor 226 is charged to the voltage (e.g., ground voltage). The first end and the second end of the resistor 225 are lightly coupled to the second input and output of the operational amplifier 224. In the example, the first input terminal of the operational amplifier 224 is a non-inverting input I and the second input of the operational amplifier 224 is an inverting input terminal. In another embodiment, the combination of the voltage gain material 22() and the analog-to-bit conversion is shown in Fig. 6 and can be matched according to the design requirements (see Figure 17). Not shown). The present inventors can consider the design requirements, and the current to voltage conversion unit 21 of Figure 6. For example, in addition to the implementation of the current-to-voltage conversion unit 21A shown in FIG. 3, the current-to-voltage conversion unit MO can be implemented using a resistor and a current mirror. In the other embodiment, the non-inverting amplifier inside the voltage gain unit 22G includes non-inverting circuits. This age reverses the large circuit phase amplifier string. The input end of the first non-inverting amplifying circuit in the amplifier string is coupled to the current to the last non-inverting amplifying circuit of the power converting unit 21G, which is the analogy to digital conversion The input end of the device 23〇. For the implementation of the above amplifier string, reference may be made to w 5, that is, the 5 + inverting amplifying circuits 510-1 to 510·n may be replaced by a non-inverting amplifying circuit. Figure 7 is a circuit diagram showing the current-to-voltage conversion unit 210 of Figure 2 in accordance with a fifth embodiment of the present invention. Current to voltage conversion unit 210 includes a resistor 710 and a current mirror 720. The first terminal of the resistor 710 receives a first reference voltage (e.g., system voltage VDDA), and the second terminal of the resistor 710 is coupled to the input of the voltage gain unit 220. Here, the resistance 71 实现 is realized by a p-channel MOS transistor 711 to reduce the area of the resistor 71 〇 丨丨 σ. A first terminal (e.g., a source) of transistor 711 receives system voltage VDDA' and a second terminal (e.g., a drain) of transistor 711 is coupled to a control terminal (e.g., a gate) to an input of voltage gain unit 220. 201109989— 31167twf.doc/n The main current terminal of the current mirror 720 receives the sensing current Is, and the current terminal of the current mirror 72〇 is consumed to the second end of the resistor 710. By setting the current multiplying current of both the main current terminal and the servant current terminal of the current mirror 72, the current mirror 72 放大 can amplify the weak sensing current Is. This amplified sense current is converted to a sense voltage vs via a resistor 710. Thus, under the condition that the strong light and the weak light illuminate the photoelectric crystal PT, the variation range of the obtained sensing voltage Vs can be increased, so that the recognition degree of the sensing voltage Vs can be increased. The sense voltage Vs is then secondarily amplified by an inverting amplifier/non-inverting amplifier (i.e., voltage gain unit 22A) to obtain a gain voltage Vg' for subsequent processing. Here, the current mirror 720 includes a first transistor 721 and a second transistor 722. This embodiment implements crystals 721 and 722 in an N-channel gold oxide half (NM0S) transistor. The first end (e.g., the drain) of the transistor 721 acts as the main current terminal of the electric mirror 720. The second end (e.g., the source) of the transistor 721 is connected to the second reference voltage (e.g., ground voltage), and the transistor 721. The control terminal (eg, the gate) is coupled to the first end of the transistor 721. The first end of the transistor 722 serves as the servant current terminal of the current mirror 720, the second end of the transistor 722 receives the second reference voltage (ground voltage)' and the control terminal of the transistor 722 is coupled to the control terminal of the transistor 721. By determining the appearance ratio of the transistors 721 and 722, the current magnification of both the main current terminal and the current terminal of the current mirror 720 can be set. Figure 8 is a circuit diagram showing the current-to-voltage conversion unit 210 of Figure 2 in accordance with a sixth embodiment of the present invention. This embodiment is similar to that of Fig. 7, so the details will not be described again. The difference between the two is that Fig. 8 uses a current mirror 730 instead of the aforementioned current mirror 720. The current mirror 730 includes a first electric crystal 11 201109989 nm.zuvy^OlO-TW 31167twf.doc/n 7t a second transistor 732, a third transistor 733, and a 734th. The first end of the transistor 731 (e.g., no pole == four transistor terminals) and the control terminal of the transistor 731 (e.g., the first end of the main 73J of the transistor 730. the first of the transistor 732) is coupled To the servant current terminal of transistor 730, and the terminal of transistor 732 =) as the other control terminal of the current mirror transistor. The transistor 733 is connected to the second end of the crystal m (for example, no 峨W, for example, the source) receives the reference key (for example, the second control end of the body 733 (for example, the interpole) scales to electricity. The first end of the crystal 733 734 (eg, not connected to the transistor. The source of the transistor), the second end of the second body 732 of the transistor 734 (eg, voltage), and the transistor 734 ^) Receive reference voltage (grounded control terminal. Control (4) (for example, gate) is coupled to transistor 733. When switch SW1 of line control panel 11G is off, the sense line on the sense voltage of the 230th gain voltage & When the measured _milk is turned on, the voltage conversion unit-two-two device is converted into a gain voltage two-digit value to be taken out. The wire ί ^ Γ will be the difference value of the gain voltage Vg. The value and the first digit value of the first strong and the weak light illuminate the photoelectric crystal ΡΤ generated by the sensing electricity 12 y-0010-TW 31167t\vf.doc/n 201109989 flow Is will be different, so the above difference will also have The position of the touch is not mentioned. Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. It is to be understood that the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing a current type touch panel and a conventional read circuit (this is a circuit). FIG. 2 is a circuit diagram showing a current type touch panel reading device according to an embodiment of the invention. 3 is a circuit diagram of a current type touch panel reading device according to a first embodiment of the present invention. FIG. 4 is a circuit diagram of a current type touch panel item picking device according to a second embodiment of the present invention. Fig. 5 is a circuit diagram showing the voltage gain unit of Fig. 2 according to a third embodiment of the present invention. Fig. 6 is a circuit diagram showing a current type touch panel reading device according to a fourth embodiment of the present invention. Figure 7 is a circuit diagram showing the current-to-voltage conversion unit of Figure 2 in accordance with a fifth embodiment of the present invention. Figure 8 is a sixth embodiment of the present invention. 2 Circuit diagram of current to voltage conversion unit 13 201109989 HM-2Uuy-u010-TW 31167twf.doc/n [Main component symbol description] 110: Touch panel 130: Gate driver 14Ό, 200: Read circuit - - ', 141, 212, 223, 224: operational amplifier 142: feedback capacitors 143, 230: analog to digital converter 150: image processing circuit
210 :電流至電壓轉換單元 I 220:電壓增益單元 211、221、222、225、226、710 :電阻 510-1、510-n :反相放大電路 711 : P通道金氧半電晶體 720、730 :電流鏡 721〜722、731〜734 : N通道金氧半電晶體 Ds :數位碼210: current to voltage conversion unit I 220: voltage gain unit 211, 221, 222, 225, 226, 710: resistors 510-1, 510-n: inverting amplifying circuit 711: P channel MOS semi-transistor 720, 730 : Current mirrors 721~722, 731~734: N-channel MOS semi-transistor Ds: digital code
Is :感測電流 籲 PT :光電晶體 SW1 :開關 VBIAS :偏壓電壓Is : Sensing current PT : Photoelectric crystal SW1 : Switch VBIAS : Bias voltage
Vg :增益電壓Vg: gain voltage
Vs :感測電壓 14Vs : sensing voltage 14
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098129729A TWI526887B (en) | 2009-09-03 | 2009-09-03 | Current touch panel reading device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098129729A TWI526887B (en) | 2009-09-03 | 2009-09-03 | Current touch panel reading device |
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| TW201109989A true TW201109989A (en) | 2011-03-16 |
| TWI526887B TWI526887B (en) | 2016-03-21 |
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| TW098129729A TWI526887B (en) | 2009-09-03 | 2009-09-03 | Current touch panel reading device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI473000B (en) * | 2012-03-12 | 2015-02-11 | Egalax Empia Technology Inc | Signal sensing circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102873065B1 (en) | 2020-04-23 | 2025-10-16 | 삼성전자주식회사 | Neuromorphic computing device and operating method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI473000B (en) * | 2012-03-12 | 2015-02-11 | Egalax Empia Technology Inc | Signal sensing circuit |
| CN105511699A (en) * | 2012-03-12 | 2016-04-20 | 禾瑞亚科技股份有限公司 | Signal measurement circuit and resistance value transfer circuit of capacitive touch screen |
| CN105511699B (en) * | 2012-03-12 | 2018-07-24 | 禾瑞亚科技股份有限公司 | Signal measurement circuit and resistance value transfer circuit of capacitive touch screen |
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| Publication number | Publication date |
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| TWI526887B (en) | 2016-03-21 |
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