201109802 六、發明說明： 【發明所屬之技術領域】 本發明是關於一種 MVA ( Multi-domain Vertical Alignment )方式的液晶面板的製造方法，尤其是關於一 種將混合利用電壓施加具有配向的配向性的液晶與對紫外 線反應而產生聚合的光反應性物質的材料封入於兩枚玻璃 基板之間，對此液晶面板照射紫外線而聚合紫外線反應材 料，俾將配向膜形成於玻璃板上的液晶面板的製造方法及 製造裝置。 【先前技術】 液晶面板是將液晶封入在兩枚光透過性基板（玻璃基 板）之間的構造，在一方的玻璃基板上形成多數活性元件 (TFT )與液晶驅動用電極，而在其上面形成配向膜。在 另一方的玻璃基板形成濾色片，配向膜，以及透明電極（ ITO )。又，在兩玻璃基板的配向膜間封入液晶，而以密 封劑來密封周圍。 在此種構造的液晶面板中，配向膜是用以控制對電極 間施加電壓而將液晶予以配向的液晶配向者。傳統上，控 制配向膜是利用摩擦所進行，惟近年來嘗試著新的配向控 制技術。 此爲，將混合利用電壓施加具有配向的配向性的液晶 ，及對紫外線反應而產生聚合的光反應性物質（紫外線反 應材料）的材料封入設有TFT元件的第1玻璃基板與相對 -5- 201109802 於該第1玻璃基板的第2玻璃基板之間，對此液晶面板照射 紫外線而聚合紫外線反應材料，藉由固定接觸於玻璃基板 的液晶（亦即表層的大約1分子層）的方向，在液晶給予 預傾角（例如參照專利文獻1 ) 。 ^ 依照此方法，傳統上具有爲了給予預傾角所需要的斜 面的突起物成爲不需要之故，因而液晶面板的製程可予以 簡化。因此，可刪減液晶面板的製造成本或製造時間，而 且依上述突起物的影子不見之故，因而開口率被改善，具 有對背面光的省電化有所關連的優點。 在進行此新配向控制的液晶面板的製造技術上，有關 於對於混合液晶與紫外線反應材料的材料（以下，也有稱 爲含有紫外線反應材料的液晶的情形）照射紫外線的處理 方法，被提起幾種提案。 在專利文獻2所述的「液晶顯示元件裝置及其製造方 法」中’提案一種依次組合進行第一條件的紫外線照射， 及聚合速度比第一條件的紫外線照射還要大的第二條件的 紫外線照射的液晶顯示裝置的製造方法[參照段落（〇〇 i 2 )等]。 具體來說’放射照度與積算強度爲第二條件者比第一 條件要要大的條件進行紫外線照射。作成如此，在第一條 件的紫外線照射中’較緩和的聚合之故，因而可抑制配向 異吊的發生’之後即使提昇聚合速度也沒有問題，而可得 到沒有或被抑制配向異常的液晶層。又，記載著第二條件 的‘外線照射中’增多3 I 〇 n m左右的短波長成分的比率較 -6 - 201109802 佳[參照段落（003 7 )等]。 在專利文獻3所述的「液晶顯示元件裝置及其 法」中，表示「爲了不會劣化液晶，照射使用濾波 不足310 nm的短波長領域的紫外線者較佳。」，「 若將波長3 1 0 n m的強度完全地作成零，則很難得到 的液晶配向。所以，利用在波長3 1 0 n m的強度爲含 〜0.05 mW/cm2左右的光源者較佳。」[參照段落（ 等]的見識。 在專利文獻4所述的「液晶顯示元件裝置及其 法」中’作爲短波長的紫外線者，在短時間得到液 直配向性上較有利，惟容易促進液晶分子等的變質 方面長波長的紫外線者，很難促進液晶分子等的變 爲了得到液晶的垂直配向性上成爲需要長時間[參 ( 003 1 )等]’提案者300 nm〜3 50 nm的波長成分 長的紫外線）的積算強度的範圍，及3 50 nm〜400 長成分（長波長的紫外線）的積算強度的範圍。 專利文獻1:日本特開2003- 1 77408號公報 專利文獻2:日本特開2005- 1 8 1 5 82號公報 專利文獻3:日本特開2005-3 3 86 1 3號公報 專利文獻4:日本特開2006-5 875 5號公報 【發明內容】 如上述地’有關於對於混合液晶與紫外線反應 材料照射紫外線的處理方法有幾種提案，惟本案發 製造方 器切斷 但是， 所期望 有 0.02 0019) 製造方 晶的垂 ，另一 質，惟 照段落 (短波 nm的波 材料的 明人， 201109802 進行各種實驗加以檢討的結果，也得到如下的見識。 亦即’在使用如上述的新配向控制的液晶面板，反應 於紫外線而產生聚合的紫外線反應材料被混合於液晶，利 用紫外線照射使得此紫外線反應材料聚合。但是，若在液 晶中留下未聚合的紫外線反應材料，則在液晶面板產生畫 面的曬印或VHR( Voltage Holding Ratio)的降低，對比 的降低等而降低信賴性。以下’將此情形稱爲依紫外線反 應材料的殘留的信賴性的降低。所以，混合於液晶的紫外 線反應材料，是必須毫無保留地都被聚合才可以。 爲了促進紫外線反應材料的聚合，照射更多紫外線反 應材料所反應的波長的光就可以。一般，在紫外線所聚合 的反應材料是在波長3 60 nm以下的領域下具有高反應感度 。另一方面，如專利文獻2、3所述地，若將短波長的紫外 線，尤其是波長310 nm以下的光予以有力地接觸，則也有 變成液晶受損傷的變質劣化的說法。 然而，此液晶的損傷、變質、劣化爲具體上說明什麼 ，又該些與被照射的波長有什麼關聯性並不明瞭，而針對 於爲了毫無保留地聚合紫外線反應材料所需的波長範圍， 或短波長的光給予液晶的具體性影響，也沒有做充分地解 釋清楚。 亦即，至今爲止，在液晶混合紫外線反應材料而對於 此照射紫外線來進行配向控制MVA方式的液晶面板的製造 上，針對於將那一種波長範圍的光，以那一種比率進行照 射，就不會降低液晶面板的信賴性又在短時間就可進行配 -8 - 201109802 向處理並未清楚地說明。 本發明是依據針對於用以完全聚合上述紫 料所需的光的波長範圍’或是短波長的光給予 性影響的見識而進行者，本發明的目的是在於 紫外線反應材料而對於此照射紫外線來進行 MVA方式的液晶面板的製造方法，提供一種不 晶分解的信賴性降低’或依紫外線反應材料的 性降低’在短時間可進行液晶面板的配向處理 的製造方法及製造裝置。 發明人等，專心檢討的結果，發現如下事 首先，針對於具有現在一般所使用的VA ( Alignment)用的負介電係數向異性的液晶（ 製），測定對於光的波長的穿透率。在第1圖 的液晶對於波長的穿透率的圖表。在同圖中， (nm)，縱軸是穿透率（％)。 如同圖所示地，液晶是在波長3 3 〇 n m以上 透率是100%成爲透明，惟可知波長320 nm以 吸收。所吸收的光是分解液晶分子。亦即，當 波長（比320 nm還要短的波長）的光予以照射 液晶是被分解，藉此產生液晶面板的信賴性的 ，將此稱爲依液晶的分解的信賴性的降低。 又，在此，將吸收上述光的波長內’最長 長（縮短光的波長時開始光的吸收的波長）稱 長，表示於第1圖的液晶是吸收端波長爲32 0 n: 外線反應材 液晶的具體 在液晶混合 配向控制的 會導致依液 殘留的信賴 的液晶面板 項。 Vertical 默克公司所 表示其結果 橫軸是波長 的領域，穿 下的光是被 將所吸收的 在液晶，則 降低。以下 波長的的波 爲吸收端波 201109802 如以上地，具有VA用的液晶的負介質常數向異性的 液晶是其吸收端波長爲320 nm，而在320 nm的穿透率會降 低者。 亦即，所謂液晶面板的畫面的曬印或VHR的降低，對 比的降低的信賴性的降低，是可能爲藉由將上述吸收短波 長以下的光所產生的液晶分解，及起因於上述紫外線反應 材料的殘留。 以下，在MVA方式的液晶面板的製造中，針對於含有 現在一般所使用的液晶的紫外線反應材料，測定吸光度對 於光的波長。在光被吸收的亦即吸光度大的亦即吸光度大 的波長的領域，紫外線反應材料是產生聚合反應。 在第2圖表示其結果的紫外線反應材料對於波長的吸 光度。在同圖中，橫軸是波長（nm )、縱軸是紫外線反 應材料的吸光度（任意單位）。又，在測定使用混合著混 合液晶與紫外線反應材料的材料，針對於將紫外線反應材 料的濃度，1%以下的例如O.lw% (w%是指重量百分比 )的情形，與作成O.Olw%時的兩種類。材料的厚度是15 // m以下。 如同圖所示地，紫外線反應材料是濃度高（例如〇. i w % )狀態中，在波長3 70 nm以下的領域中吸收光。亦即， 紫外線反應材料的吸收端波長是370 nm，當照射波長370 nm以下的光會產生聚合反應。 但是，當聚合反應進行而減少反應材料的殘留量，則 可知在波長330 nm以上的光不會進行聚合反應。此爲當反 -10- 201109802 應材料的濃度變低（聚合反應進至90%，而反應材料的濃 度成爲O.Olw%)，外觀上，長波長的光是可能幾乎未被 吸收。如以上地’可知即使以波長3 7 0 nm以下的光而產生 聚合反應的紫外線反應材料，若未照射波長3 3 0 nm以下的 光’則未能聚合殘留1 0 %的（濃度0. 〇 1 w %的）反應材料 〇 亦即’爲了聚合所有紫外線反應材料，也必須照射上 述液晶的吸收端波長（波長320 nm)以下的光。 又’也可考量使用以比波長370 nm還要長的波長產生 聚合反應的紫外線反應材料，惟若使用以比波長3 70 nm還 要長的波長產生聚合反應的紫外線反應材料，則以自然光 也產生聚合反應之慮，由處理難等的理由，而在M VA方式 的液晶面板的製造上作爲含有於液晶的紫外線反應材料， 如第2圖所示地使用著以波長370 nm以下的光產生聚合反 應的紫外線反應材料。 上述的「當將照射於液晶的光的波長作成其吸收端波 長（3 2 0 nm )以下’則液晶是被分解」的情形，及「若未 照射波長320 nm以下的光，則無法聚合殘留10%的紫外線 反應材料」的情形，爲相反者。亦即，利用上述實驗，爲 了防止依紫外線反應材料的殘留的信賴性的降低，用以進 行聚合反應所有含於液晶的紫外線反應材料，必須照射吸 收端波長（3 2 0 nm )以下的光。但是，可知當照射吸收端 波長（3 2 0 nm )以下的光，則產生依液晶分解的信賴性， 滿足此相反的要求的方式，必須照射光。 -11 - 201109802 所以，其兩方成立的方式，亦即，將比上述液晶的吸 收端波長（波長320 ntn)還要短的波長的光，不會產生依 紫外線反應材料的殘留的信賴性的降低的方式，所有紫外 線反應材料超過產生聚合反應的照射量，惟成爲不會超過 產生依液晶分解的信賴性的降低的照射量的臨界値的範圍 的方式進行控制而必須加以照射。儘管如此，在僅液晶的 吸收端波長（波長320 nm)以下的光，不可超過依液晶的 分解的信賴性的降低所產生的照射量的臨界値之故，因而 作爲爲了聚合所有紫外線反應材料的照射量會不足，而產 生依紫外線反應材料的殘留的信賴性降低。 如此地，紫外線反應材料的大部分是使用未被吸收於 液晶（亦即，未分解液晶）的液晶的吸收端波長（波長 320 nm)以上的光來產生聚合反應，而將以稍些殘留的吸 收端波長以上的光無法實質上反應的反射材料，以液晶的 吸收端波長（波長320 nm)以下的光進行聚合反應。 所以，將光照射於液晶面板之際，將比液晶的吸收端 波長還要長的波長的光（例如波長範圍320 nm〜360 nm的 光）的照射量者，比液晶的吸收端波長還要短的波長的光 (例如波長300 nm〜320 nm的光）的照射量作成較多。藉 此，高速地可聚合反應紫外線反應材料的大部分，且在較 短的處理時間毫無保留地可聚合反應在吸收端波長以上的 光實質上無反應的反應材料。又，如上述地，比液晶的吸 收端波長還要短的波長的光的照射量，是超過所有紫外線 反應材料產生聚合反應的照射量，惟成爲不會超過依液晶 -12- 201109802 分解的信賴降低所產生的照射量的臨界値的範圍的方式加 以控制而進行照射較佳。 爲了上述的將比液晶的吸收端波長還要長的波長的光 (例如波長範圍320 nm〜3 60 nm的光）的照射量者，比液 晶的吸收端波長還要短的波長的光（例如波長300 nm〜 3 20 nm的光）的照射量作成較多，將光照射的工程分成照 射比液晶的吸收端波長還要長的波長的光（波長範圍320 nm〜3 60 nm的光）的第1工程，及照射比液晶的吸收端波 長還要短的波長的光（波長範圍300 nm〜320 nm的光）的 第2工程，而在開始第1工程之後實施第2工程。 在第1工程中，藉由波長範圍320 nm〜360 nm的光， 聚合反應紫外線反應材料的大部分，在第2工程中，配合 依紫外線反應材料的濃度減少的吸光度的變化，藉由照射 波長300 nm〜320 nm範圍的光，俾聚合反應殘留的些微的 紫外線反應材料。 作爲放射在第1工程所使用的波長320 nm〜360 nm的 範圍的光的光源，可使用切斷短波長的螢光體燈或碘準分 子燈。又，作爲放射在第2工程所使用的波長3 00 ηηι〜320 nm範圍的光的光源，可使用3 08XeCl準分子燈、螢光體燈 、封入氙的碘準分子燈。 用以實施上述第1工程及第2工程的液晶面板的製造裝 置，例如如以下所述的構成。 由第1光照射部及第2光照射部構成光照射部構成光照 射部’對於液晶面板，在第1工程’從上述第1光照射部照 -13- 201109802 射比液晶的吸收端波長還要長的波長的光，而在開始第1 工程之後，從上述第2光照射部照射比液晶的吸收端波長 還要短的波長的光，來進行液晶面板的配向處理。 又，在支持液晶面板的支持部設置將電壓施加於液晶 面板的手段，至少藉由第1光射器來進行光照射時，將電 壓施加於液晶面板，而配向液晶。 依據以上在本發明，如以下所述地來解決上述課題。 (1) 一種液晶面板的製造方法，是對於將含有光反 應性物質的液晶封入於內部的MVA方式的液晶面板，照射 光，使得上述光反應性物質進行反應，而在上述液晶面板 的內部形成配向部的液晶面板的製造方法，其特徵爲處理 :照射比液晶的吸收端波長還要長的波長的光的第1工程 ，及開始上述第1工程之後，開始照射比液晶的吸收端波 長還要短的波長的光的第2工程，來進行液晶面板的配向 處理。 (2 )在上述（1 )中，將在上述第1工程中所照射的 比上述液晶的吸收端波長還要長的波長的光的波長範圍作 爲3 20 nm〜360 nm，而將在第2工程中所照射的短波長的 光的波長範圍作爲300 nm〜320 nm。 (3) —種液晶面板的製造裝置，是具備：支持將含 有光反應性物質的液晶封入於內部的Μ V A方式的液晶面板 的支持部，及對於被支持於上述支持部的上述液晶面板照 射光的光照射部，對於被支持於上述支持部的液晶面板照 射來自上述光照射部的光，藉此將上述液晶面板內的光反 -14- 201109802 應性物質進行反應而在液晶面板的內部形成配向部的液晶 面板的製造裝置’其特徵爲：上述光照射部是具備：備有 照射比液晶的吸收端波長還要長的波長的光的光源的第1 光照射部’及備有照射比液晶的吸收端波長還要短的波長 的光的光源的第2光照射部。 (4)在上述（3)中，支持上述液晶面板的支持部是 具備來自第1光照射部的光被照射時，將電壓施加於液晶 面板的手段。 在本發明中，可得到以下的效果。 藉由將光照射於液晶面板的工程，分成照射比液晶的 吸收端波長（例如波長3 20 nm )還要長的波長的光第1工 程，及照射比液晶的吸收端波長還要短的波長的光的第2 工程，獨立比液晶的吸收端波長還要長的波長的光的照射 量，及比液晶的吸收端波長還要短的波長的光的照射量而 可設定控制。 因此，在第1工程中，爲了快速地聚合紫外線反應材 料的大部分，設定成將比液晶的吸收端波長還要長的波長 的光以高放射照度在短時間給予多照射量’另一方面，在 第2工程中，可設定成將比液晶的吸收端波長還要短的波 長的光照射量*超過所有紫外線反應材料產生聚合反應的 照射量，惟未超過依液晶的分解的信賴性降低所產生的照 射量的臨界値。 所以，也不會產生依紫外線反應材料的殘留的信賴性 的降低，或是依液晶的分解的信賴性的降低’而以短時間 -15- 201109802 有效率地可實施液晶面板的配向處理。 【實施方式】 在第3圖表示使用於本發明的實施例的液晶面板的製 造方法的液晶面板的製造裝置（紫外線照射裝置）的第i 構成例。 在本發明中，分成藉由比液晶的吸收端波長還要長的 波長（波長範圍320 nm〜360 nm)的光，聚合反應含有於 液晶的紫外線反應材料大部分的第1工程，及藉由比液晶 的吸收端波長還要短的波長（波長範圍300 nm〜320 nm) 的光進行聚合反應在第1工程來聚合的殘留的紫外線反應 材料的第2工程予以實施來進行液晶面板的配向處理。 所以，如同圖所示地，本實施例的液晶面板的製造裝 置（紫外線照射裝置）是具備：實施第1工程的第1光照射 部1，及實施第2工程的第2光照射部2。第1光照射部1是具 備：第1光照射器1 a，及載置液晶面板的第1工件平台3 a。 又，第2光照射部2是具備第2光照射器2a與第2工件平台3b 〇 在同圖中，在第1光照射器1與第2光照射器2，分別表 示著各6支的燈1 b、2b，惟實際上，配置著1 〇支至5 0支以 上的燈。又，針對於燈的支數，因應於處理的液晶面板的 大小可適當地選擇。 第1、第2工件平台3a、3b，是支持液晶面板8的支持 部，具備保持液晶面板8的真空吸附機構（未圖示）。又 -16- 201109802 ’在光照射中’有液晶面板8的溫度上昇的顧慮時，則在 工件平台3a、3b’設置水冷配管等的冷卻機構也可以。 液晶面板8是如上述地在兩枚光透過性基板（玻璃基 板）之間封入含有紫外線反應材料的液晶的構造，而在玻 璃基板上形成有多數活性元件（TFT )與液晶驅動用電極 、濾色片、透明電極（ITO )，以密封劑密封著周圍。 在第1工件平台3 a，設有將電壓施加於所載置的液晶 面板8的機構的探針4。探針4是被連接於探針電源4a。藉 由第1光照射器1 a進行光照射時，使得探針4的前端接觸於 第1工件平台3a上的液晶面板的電極，而從探針電源43施 加著電壓。又，第2工程中，未在液晶施加電壓而照射光 也可以。所以’在第2工件平台3 b未設置將電壓施加於液 晶面板8的機構也可以。 第1光照射器la是具備第1燈lb，而第2光照射器2a是 具備第2燈2b。爲了以均勻的照度來照射大型液晶面板8全 體，在各個光照射器1 a、2 a排列著複數支燈1 b、2b。又， 第1光照射器〗a的第1燈群是被連接於第1燈的電源〗c，而 第2光照射器2a的第2燈群是被連接於第2燈的電源2c。 在第1工程中’對液晶不會給予損傷，在短時間內進 行聚合反應紫外線反應材料的大部分。所以，安裝於第1 光照射器U的第1燈lb是使用著放射未含有液晶的吸收端 波長的320 nm以下的光（比波長320 nm還要短的波長的光 )，或是即使含有也極少，且在液晶的吸收端波長的320 nm以上（比波長320 ηηι還要長的波長的光）的範圍具有 -17- 201109802 發光峰値的光者。 作爲此種燈，如上述地，可列舉碘準分子燈，或是切 斷波長3 20 nm以下的螢光燈。 在第2工程中’完全地聚合在第丨工程未反應所留下的 稍些量的紫外線反應材料。所以，安裝於第2光照射器2a 的第2燈2b，是在液晶的吸收端波長的320 nm以上（比波 長320 nm還要短的波長的光）的範圍使用具有發光的峰値 的燈。 作爲此種燈，可例舉螢光燈、XeCl準分子燈、封入氙 的碘準分子燈。 以上，此些燈是在紅外光等的配向處理未放射不需要 的光，可防止基板的溫度上昇等。針對於燈的詳細構造會 在以下說明。 如第3圖所示地，上述的準分子燈是在燈本體形成有 反射膜之故，因而在光照射部未設置反射鏡1 d、2d也可以 。在燈未形成反射膜的例如螢光體燈的情形，在光照射部 1、2設置反射鏡Id、2d。 在第1光照射部1與第2光照射部2之間，設置搬運液晶 面板的工件搬運機構5。工件搬運機構5是在第1光照射部1 ，將結束第1工程的液晶面板8從第1工件平台3 a搬運至第2 光照射部2的第2工件平台3b。 又，第1燈的電源lc、第2燈的電源2c、探針電源4a、 工件搬運機構5等是被連接於控制部7。控制部7是控制第1 燈1 b與第2燈2b的點燈熄燈及照射時間，在第1工程中施加 -18- 201109802 於液晶面板8的電壓値或時間、或工件搬運等。 液晶面板8是首先被載置於第1光照射部1的第1工件平 台3 a，一面施加電壓、一面從第1光照射器1 a照射著光（ 第1工程）。終了第1工程之後，液晶面板是藉由工件搬運 機構，被載置於第2光照射部的第2工件平台，而從第2照 射器照射著光。 又，第2工程的光照射是雖然波長3 00 nm〜3 20 nm範 圍的照射量，不會超過所有紫外線反應材料產生聚合反應 的照射量，惟不會超過依液晶分解的信賴性降低所產生的 照射量的臨界値的方式，其範圍事先藉由實驗等求出，而 被設定在控制部7。 第4圖是表示上述螢光體燈的構成例的圖式，同圖是 表示以包括管軸的平面切剖的斷面圖。 螢光體燈1 0是具有內側管1 1 1與外側管1 1 2大致配置於 同軸的大約雙重管構造的容器（發光管）11，密封著該容 器11的兩端部11A、11B，而在內部形成有圓筒狀的放電 空間S。在放電空間S封入有氙、氬、氪等的稀有氣體。 容器11是石英玻璃所構成，而在內周面設有低軟化點 玻璃層1 4，又有螢光體層1 5設於此低軟化點玻璃層1 4的內 周面。此低軟化玻璃層1 4是例如使用著砸矽酸玻璃或鋁矽 酸玻璃等的硬質玻璃。又，螢光體層15是例如使用著铈賦 活鋁酸鎂鑭（La-Mg-Al-O: Ce)螢光體。 在內側管1 1 1的內周面設有電極1 2 ’而在外側管1 1 2的 外周面設有網狀電極13。此些電極12、13是成爲介裝容器 -19- 201109802 1 1與放電空間s所配置。 電極1 2、1 3是經由引線W 1 1、w 1 2連接著電源裝置1 6 。當由電源裝置1 6施加著高頻電壓，則在電極1 2、1 3間形 成有介裝介質（1 1〗、1 1 2 )的放電（所謂介質障壁放電） 、氙氣體的情形會發生波長1 72 nm的紫外光。在此所得到 的紫外光是螢光體的激勵用的光，藉由照射螢光體層，放 射著中心波長爲340 nm左右的紫外光。 在第5圖表示螢光體燈的其他構成例。同圖（a)是表 以包括管軸的平面切剖的斷面圖，而（b)是表示（a)的 A - A線斷面圖。 在第5圖中，燈20是具有一對電極22、23，電極22、 23是配設於容器（發光管）21的外周面，而在電極22、23 的外側設有保護膜24。 對於容器2 1內周面的光出射方向側，有紫外線反射膜 25設於反射側的內面[參照第5 ( b )圖]，而在其內側設有 低軟化點玻璃層26，在此低軟化點玻璃層26的內周面設有 螢光體層27。 其他的構成是與表示於第4圖者同樣，被封入於容器 21內的放電空間S的氣體，使用於螢光體層25的螢光體也 同樣。 當高頻電壓施加於電極22、23，而在電極22、23間形 成介質障壁放電，如上述地發生紫外光。藉此，螢光體被 激勵，由螢光體層發生中心波長340 nm左右的紫外光，該 光是在紫外線反射膜25被反射，由未設有紫外線反射膜25 -20- 201109802 的開口部分被放射至外部。 在第6圖表示螢光體燈的分光放射光譜。如同圖所示 地’螢光體燈是放射波長300 nm〜360 nm以上的光。 第7圖是表示碘準分子燈的構成例的圖式。同圖（a) 是表示全體的外觀圖，（b)是表示（a)的A-A線斷面圖 〇 燈30是例如藉由石英玻璃等的介質材料，具備斷面大 約方形狀的放電容器3 1。在容器3 1有密封構件3 4配置於長 邊方向的兩端近旁。又，在容器31的上下壁面35、36的各 該外表面，隔著形成於容器3〗內部的放電空間S及構成容 器31的介質材料相對的方式設有網狀的電極32、33。 又，在容器3 1的內部，例如含有以Si02作爲成分的紫 外線反射膜3 7對於光出射方向側的壁面3 5形成於相反側的 壁面36，而在放電空間S內所發生的紫外線藉由紫外線反 射膜3?朝光出射方向被反射，而成爲從位於光出射方向側 的壁面3 5出射。 在容器31的內部除了封入有碘氣體以外，作爲緩衝氣 體還封入有氬氣體、氪氣體。全壓爲4〇〜130 kP a。其中 确氣體的濃度是0.05〜1.0%，放射波長是342 nm。 又，表示於第4圖、第5圖的燈是容器內面具有螢光體 ，對此，表示於第7圖的燈是未具有螢光體之處不相同。 惟在利用介裝介質的放電（介質障壁放電）之處爲共通。 在第8圖表示碘準分子燈的分光放射光譜。如同圖所 示地，碗準分子燈是放射波長310 nm〜350 nm的光。 -21 - 201109802 封入氙的碘準分子燈’是在表示於第7圖的碘 封入所定量氙氣體，作成放射與上述不相同的波長 〇 封入氣體是除了碘氣體、氙氣體以外，作爲緩 封入有氪氣體。全壓力爲40〜！3〇 kP a。其中，碘 濃度是0.05〜1.0% ’氙氣體的濃度是被封入0.05 - 右。 放射波長是在W2 nm與320 nm具有峰値，而藉 體與氙氣體的封入量的相對性平衡，使得兩者的放 化。 在第9圖表示封入氙的碘準分子燈的分光放射 如同圖所示地，封入氙的碘準分子燈是放射波長3 1 3 50 nm的光。又，封入氙的碘準分子燈，是藉由變 入的量，就可自由地可變更波長320 nm左右的光量 大小）。 因此，增加波長3 20 nm以下的光的成分就可更 聚合殘留的紫外線反應材料，而可縮短處理時間。 又，當使用此燈，則藉由變更氙的封入量，可 變更波長3 20 nm左右的光量（峰値的大小）。所以 由地設定波長範圍300 nm〜320 nm的光，及波長毒 nm〜360 nm的光的比率，又，將波長320 nm以下 照射量，超過所有吸收端波長產生聚合反應的照射 成爲容易地可用不超過依液晶分解的信賴性降低所 照射量的臨界値的範圍進行設定。 燈，再 的光者 衝氣體 氣體的 -2%左 由挑氣 射量變 光譜。 0 n m〜 更所封 (峰値 快速地 自由地 ，可自 β 圍 3 2 0 的光的 量，惟 產生的 -22- 201109802 封入氙的氯準分子燈（XeC1準分子燈）’是在表示於 第7圖的燈中，封入氯、氙氣體以替代峨者’藉此’可放 射不相同的波長的光° 具體來說，封入有氯氣體、氙氣體’及作爲緩衝氣體 封入有氬氣體。全壓力爲3〇 kP a左右。其中’氯氣體的濃 度是封入0.5〜1.0%左右、氙氣體濃度是封入90〜95%左 右、氬氣體的濃度是封入〗.〇〜3·〇%左右。放射波長3 08 nm ° 在第10圖表示XeCl準分子燈的分光放射光譜。如同圖 所示地，XeCl準分子燈是放射在波長3 08 nm具有發光峰値 的波長290 nm〜320 nm範圍的光。 又，表示於第4圖、第5圖、第7圖的燈都是作成在一 對電極間介設介質的放電（所謂介質障壁放電）上共通。 表示於第4圖、第5圖的燈是在容器內面塗佈螢光體，而藉 由螢光體得到所期望的光，對此，表示於第7圖的碘準分 子燈、封入氙的碘準分子燈、封入氙的氯準分子燈是未使 用螢光體’而藉由此些封入物的發光得到所期望的光之處 不相同。 又’在表示於第4圖、第5圖的構造的燈中，除掉螢光 體’當然也可使用作爲碘準分子燈、封入氙的碘準分子燈 、封入氙的氯準分子燈，又，在表示於第7圖的構造的燈 中，若塗佈螢光體，則僅以氙、氬、氪等的稀有氣體也可 構成燈。 爲了確認本發明的效果，進行以下的實驗，針對於照 -23- 201109802 射量對於含有紫外線反應材料的液晶的照射量加以驗證。 首先，進行對於含有紫外線反應材料的液晶’波長320 nm 以下的光是確認以不會超過依液晶分解的品質降低所產生 的照射量的臨界値的範圍必須照射的實驗。將其結果表示 於表1。 [表1]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal panel of an MVA (Multi-domain Vertical Alignment) type, and more particularly to a liquid crystal having an alignment and alignment property applied to a mixed use voltage. A method for producing a liquid crystal panel in which a material that reacts with ultraviolet rays to generate a photoreactive material is sealed between two glass substrates, and the liquid crystal panel is irradiated with ultraviolet rays to polymerize the ultraviolet ray reactive material, and the alignment film is formed on the glass plate And manufacturing equipment. [Prior Art] A liquid crystal panel has a structure in which a liquid crystal is sealed between two light-transmitting substrates (glass substrates), and a plurality of active elements (TFTs) and liquid crystal driving electrodes are formed on one glass substrate, and a liquid crystal driving electrode is formed thereon. Orientation film. A color filter, an alignment film, and a transparent electrode (ITO) are formed on the other glass substrate. Further, liquid crystal was sealed between the alignment films of the two glass substrates, and the periphery was sealed with a sealing agent. In the liquid crystal panel of such a configuration, the alignment film is a liquid crystal alignment for controlling the application of a voltage between the electrodes to align the liquid crystal. Traditionally, the control of alignment films has been carried out using friction, but in recent years new alignment control techniques have been tried. In this case, a liquid crystal having an alignment and an alignment property is applied to the mixed use voltage, and a material which reacts with ultraviolet rays to generate a photoreactive substance (ultraviolet reaction material) is sealed in a first glass substrate provided with a TFT element and a relative - 5 201109802 The liquid crystal panel is irradiated with ultraviolet rays between the second glass substrates of the first glass substrate to polymerize the ultraviolet ray reactive material, and the direction of the liquid crystal (that is, about one molecular layer of the surface layer) which is in contact with the glass substrate is fixed. The liquid crystal is given a pretilt angle (for example, refer to Patent Document 1). ^ According to this method, a projection having a slope which is conventionally required to impart a pretilt angle is conventionally unnecessary, and thus the process of the liquid crystal panel can be simplified. Therefore, the manufacturing cost or the manufacturing time of the liquid crystal panel can be reduced, and the aperture ratio is improved depending on the shadow of the above-mentioned protrusions, so that the aperture ratio is improved, and there is an advantage that the power saving of the backlight is related. In the manufacturing technique of the liquid crystal panel that performs the new alignment control, there is a treatment method for irradiating ultraviolet rays to a material for mixing a liquid crystal and an ultraviolet ray reactive material (hereinafter, also referred to as a liquid crystal containing an ultraviolet ray reactive material). proposal. In the "liquid crystal display element device and the method of manufacturing the same" described in Patent Document 2, it is proposed to sequentially combine ultraviolet rays irradiated under the first condition and ultraviolet rays having a polymerization rate higher than that of the first condition. A method of manufacturing a liquid crystal display device to be irradiated [see paragraph (〇〇i 2 ), etc.]. Specifically, the ultraviolet irradiance is performed under the condition that the irradiance and the integrated intensity are larger than the first condition. In this way, in the ultraviolet irradiation of the first condition, the polymerization is more moderate, so that the occurrence of the alignment suspension can be suppressed, and even if the polymerization rate is increased, there is no problem, and a liquid crystal layer having no or suppressed alignment abnormality can be obtained. Further, it is described that the ratio of the short-wavelength component of about 3 I 〇 n m in the "external line irradiation" in the second condition is better than -6 - 201109802 [refer to paragraph (003 7) or the like]. In the "liquid crystal display device device and the method thereof" described in Patent Document 3, it is shown that "in order to prevent deterioration of the liquid crystal, it is preferable to use ultraviolet rays in a short-wavelength region of less than 310 nm for filtering." When the intensity of 0 nm is completely zero, it is difficult to obtain the alignment of the liquid crystal. Therefore, it is preferable to use a light source having a wavelength of 3 to 10 nm and a light source of about 0.05 to 0.05 mW/cm2. [Refer to paragraph (etc.) In the "liquid crystal display device and its method" described in Patent Document 4, "as a short-wavelength ultraviolet ray, it is advantageous to obtain liquid direct alignment in a short time, but it is easy to promote deterioration of liquid crystal molecules and the like. In the ultraviolet ray, it is difficult to promote the liquid crystal molecules and the like to obtain the vertical alignment of the liquid crystal, which requires a long time [Ref. (003 1 ), etc.] 'Proposer 300 nm to 3 50 nm wavelength component long ultraviolet light) The range of intensities, and the range of 3 50 nm to 400 long components (long wavelength UV). Patent Document 1: Japanese Laid-Open Patent Publication No. 2003- 1 77408 Patent Document 2: JP-A-2005- 1 8 1 5 82 Patent Document 3: JP-A-2005-3 3 86 1 3 Patent Document 4: Japan JP-A-2006-5 875 5 SUMMARY OF THE INVENTION As described above, there are several proposals for a method of irradiating ultraviolet rays to a mixed liquid crystal and an ultraviolet ray reactive material, but the present invention is cut off, but it is expected 0.02 0019) The manufacture of the square crystal of the sag, the other quality, but the passage (the short-wave nm wave material of the Ming people, 201109802 conducted a variety of experiments to review the results, also got the following insights. That is, 'in the use of the above new In the liquid crystal panel of the alignment control, the ultraviolet ray reactive material which is polymerized in response to ultraviolet rays is mixed in the liquid crystal, and the ultraviolet ray reactive material is polymerized by ultraviolet ray irradiation. However, if the unpolymerized ultraviolet ray reactive material remains in the liquid crystal, the liquid crystal panel is present. Reduces the reliability of the printing of the screen or the reduction of the VHR (Voltage Holding Ratio), the reduction of the contrast, etc. The reliability of the residual of the reaction material is lowered. Therefore, the ultraviolet ray-reactive material mixed in the liquid crystal must be polymerized without any reservation. In order to promote the polymerization of the ultraviolet ray-reactive material, the wavelength of the reaction of the ultraviolet ray-reactive material is irradiated. In general, the reaction material polymerized in ultraviolet light has high reaction sensitivity in the field of wavelengths of 3 60 nm or less. On the other hand, as described in Patent Documents 2 and 3, if short-wavelength ultraviolet rays are used, In particular, when the light having a wavelength of 310 nm or less is strongly contacted, the deterioration of the liquid crystal may be deteriorated. However, the damage, deterioration, and deterioration of the liquid crystal are specifically described, and the wavelengths to be irradiated are What is the correlation is not clear, and the specific wavelength influence required for the polymerization of the ultraviolet ray-reactive material for unreserved, or the specific effect of the short-wavelength light on the liquid crystal is not fully explained. In the liquid crystal, the ultraviolet ray reactive material is mixed, and the ultraviolet ray is irradiated to control the MVA liquid. In the manufacture of the panel, the light of that wavelength range is irradiated at that ratio, and the reliability of the liquid crystal panel is not lowered, and the distribution can be performed in a short time. -201109802 The processing is not clearly explained. The present invention is based on the knowledge of the wavelength-dependent or short-wavelength light-carrying effect of the light required to completely polymerize the above-mentioned violet material, and the object of the present invention is to illuminate the ultraviolet-responsive material. In the method of producing a liquid crystal panel of the MVA type, the production method and the production apparatus for performing the alignment treatment of the liquid crystal panel in a short period of time can be provided in which the reliability of the amorphous crystal decomposition is reduced or the performance of the ultraviolet light-reactive material is lowered. As a result of the intensive review, the inventors have found that the transmittance of the wavelength of light is measured for a liquid crystal having a negative dielectric constant for VA (Alignment) which is generally used today. A graph of the transmittance of liquid crystal versus wavelength in Figure 1. In the same figure, (nm), the vertical axis is the transmittance (%). As shown in the figure, the liquid crystal is 100% transparent at a wavelength of 3 3 〇 n m or more, but it is known that the wavelength is 320 nm. The absorbed light is the decomposition of liquid crystal molecules. That is, when light having a wavelength (wavelength shorter than 320 nm) is irradiated, liquid crystal is decomposed, thereby generating reliability of the liquid crystal panel, and this is referred to as reduction in reliability of decomposition by liquid crystal. Here, the wavelength "the longest wavelength (the wavelength at which the light absorption is started when the wavelength of the light is shortened) is long in the wavelength of the light absorption, and the liquid crystal at the absorption end of the liquid crystal in Fig. 1 has a wavelength of 32 0 n: the external reaction material. The liquid crystal panel is specifically controlled by the liquid crystal mixing and aligning, which results in a reliable liquid crystal panel item depending on the liquid. Vertical Merck's results indicate that the horizontal axis is the area of the wavelength, and the light that is worn is absorbed by the liquid crystal, which is reduced. The wave of the following wavelength is the absorption end wave. 201109802 As above, the negative dielectric constant of the liquid crystal having VA is an anisotropic liquid crystal whose absorption end wavelength is 320 nm, and the transmittance at 320 nm is lowered. In other words, the reduction in the printability of the screen of the liquid crystal panel or the reduction in the VHR and the reduction in the reliability of the contrast may be caused by the decomposition of the liquid crystal generated by the light having a short wavelength or lower and the ultraviolet reaction. Residue of the material. Hereinafter, in the production of an MVA liquid crystal panel, the wavelength of the absorbance with respect to light is measured for the ultraviolet ray-reactive material containing the liquid crystal which is generally used. In the field where light is absorbed, that is, a wavelength having a large absorbance, that is, a wavelength having a large absorbance, the ultraviolet ray-reactive material generates a polymerization reaction. The absorbance of the ultraviolet ray reactive material with respect to the wavelength is shown in Fig. 2 . In the same figure, the horizontal axis is the wavelength (nm), and the vertical axis is the absorbance (arbitrary unit) of the ultraviolet ray reaction material. Further, in the measurement, a material in which a mixed liquid crystal and a UV-ray-reactive material are mixed is used, and the concentration of the ultraviolet-ray-reactive material is, for example, 0.1% by weight or less (w% is a weight percentage), and O.Olw is prepared. Two classes when %. The thickness of the material is 15 // m or less. As shown in the figure, the ultraviolet ray reactive material absorbs light in a region having a high concentration (for example, 〇. i w % ) at a wavelength of 3 70 nm or less. That is, the absorption end wavelength of the ultraviolet ray-reactive material is 370 nm, and polymerization of light having a wavelength of 370 nm or less is generated. However, when the polymerization reaction proceeds to reduce the residual amount of the reaction material, it is understood that light having a wavelength of 330 nm or more does not undergo polymerization. This is when the concentration of the material is low (the polymerization proceeds to 90% and the concentration of the reaction material becomes O.Olw%), and in appearance, long-wavelength light may be almost unabsorbed. As described above, it can be seen that even if the ultraviolet light-reactive material which generates a polymerization reaction with light having a wavelength of 370 nm or less is not irradiated with light having a wavelength of 3 3 0 nm or less, the polymerization remains unresolved at 10% (concentration 0. 〇 1 w % of the reaction material 〇, that is, in order to polymerize all of the ultraviolet ray-reactive materials, it is also necessary to illuminate light having a wavelength below the absorption end wavelength (wavelength of 320 nm) of the above liquid crystal. In addition, it is also possible to use an ultraviolet-ray reactive material that generates a polymerization reaction at a wavelength longer than a wavelength of 370 nm. However, if a UV-reactive material which generates a polymerization reaction at a wavelength longer than a wavelength of 3 to 70 nm is used, natural light is also used. In the production of the liquid crystal panel of the M VA type, the ultraviolet ray-reactive material contained in the liquid crystal is used as the ultraviolet ray-reactive material contained in the liquid crystal panel, and the light is generated at a wavelength of 370 nm or less as shown in Fig. 2, which causes the polymerization reaction to occur. A UV-reactive material for polymerization. In the above, "the liquid crystal is decomposed when the wavelength of the light that is incident on the liquid crystal is set to be less than the wavelength of the absorption end (3 2 0 nm)", and "the light cannot be polymerized if the light having a wavelength of 320 nm or less is not irradiated. In the case of 10% of UV-responsive materials, the opposite is true. In other words, in order to prevent the decrease in the reliability of the residual ultraviolet-ray-reactive material by the above-described experiment, it is necessary to irradiate all of the ultraviolet-ray-reactive material contained in the liquid crystal at the absorption end wavelength (3 2 0 nm) or less for the polymerization reaction. However, it has been found that when light having an absorption end wavelength (300 nm) or less is irradiated, reliability depending on liquid crystal decomposition occurs, and it is necessary to irradiate light in a manner that satisfies the opposite requirement. -11 - 201109802 Therefore, the way in which both of them are established, that is, light having a wavelength shorter than the absorption end wavelength (wavelength 320 ntn) of the liquid crystal, does not cause residual reliability depending on the ultraviolet ray reactive material. In the reduced manner, all of the ultraviolet ray-reactive materials are required to be irradiated so as not to exceed the range of the critical enthalpy of the irradiation amount which causes the reduction in the reliability of the liquid crystal decomposition. However, in the case where only the wavelength of the absorption end wavelength (wavelength of 320 nm) of the liquid crystal is not more than the critical amount of the irradiation amount due to the decrease in the reliability of the decomposition of the liquid crystal, it is used as a polymer for all the ultraviolet ray-reactive materials. The amount of irradiation will be insufficient, and the reliability of the residue depending on the ultraviolet ray-reactive material will be lowered. As such, most of the ultraviolet ray-reactive material uses light having a absorption end wavelength (wavelength of 320 nm) which is not absorbed by the liquid crystal (that is, undecomposed liquid crystal) to cause polymerization, and will be slightly residual. A reflection material in which the light having a wavelength higher than the absorption end wavelength cannot be substantially reacted is polymerized by light having a wavelength of the absorption end of the liquid crystal (wavelength: 320 nm) or less. Therefore, when light is irradiated onto the liquid crystal panel, the irradiation of light having a wavelength longer than the absorption end wavelength of the liquid crystal (for example, light having a wavelength range of 320 nm to 360 nm) is more than the absorption wavelength of the liquid crystal. The amount of light of a short wavelength (for example, light having a wavelength of 300 nm to 320 nm) is increased. Thereby, most of the ultraviolet ray-reactive material can be polymerized at a high speed, and the reaction material which is substantially unreactive with light having a wavelength above the absorption end can be polymerized without any reservation at a short treatment time. Further, as described above, the irradiation amount of light having a wavelength shorter than the absorption end wavelength of the liquid crystal is an irradiation amount exceeding the polymerization reaction of all the ultraviolet-ray-reactive materials, but does not exceed the reliability of the liquid crystal-12-201109802 decomposition. It is preferable to control the irradiation to reduce the range of the critical enthalpy of the generated irradiation amount. For the above-mentioned irradiation of light having a wavelength longer than the absorption end wavelength of the liquid crystal (for example, light having a wavelength range of 320 nm to 3 60 nm), light having a wavelength shorter than the absorption end wavelength of the liquid crystal (for example, The irradiation amount of light having a wavelength of 300 nm to 3 20 nm is often made, and the light irradiation process is divided into light having a wavelength longer than the wavelength of the absorption end of the liquid crystal (light having a wavelength range of 320 nm to 3 60 nm). In the first project, and the second project of irradiating light having a wavelength shorter than the absorption end wavelength of the liquid crystal (light having a wavelength range of 300 nm to 320 nm), the second project is carried out after the first project is started. In the first project, most of the ultraviolet-ray reactive materials are polymerized by light in the wavelength range of 320 nm to 360 nm, and in the second project, the change in absorbance due to the decrease in the concentration of the ultraviolet-responsive material is used, and the wavelength is irradiated. The light in the range of 300 nm to 320 nm, the 俾 polymerization reaction remains a slight ultraviolet reactive material. As a light source that emits light in the range of 320 nm to 360 nm used in the first project, a fluorescent lamp or an iodescent-based molecular lamp that cuts a short wavelength can be used. Further, as a light source for radiating light having a wavelength in the range of 30,000 ηη to 320 nm used in the second project, a 308XeCl excimer lamp, a phosphor lamp, or an iodine excimer lamp sealed with ruthenium can be used. The manufacturing apparatus of the liquid crystal panel for carrying out the above-described first and second works is configured as follows, for example. The first light-irradiating portion and the second light-irradiating portion constitute a light-irradiating portion to constitute a light-irradiating portion. For the liquid crystal panel, in the first project, the wavelength of the absorption end of the liquid crystal is further reflected from the first light-irradiating portion 13-201109802. After the first wavelength is started, light of a wavelength shorter than the wavelength of the absorption end of the liquid crystal is irradiated from the second light irradiation unit to perform alignment processing of the liquid crystal panel. Further, a means for applying a voltage to the liquid crystal panel is provided in the support portion for supporting the liquid crystal panel, and when light is irradiated by at least the first photodetector, a voltage is applied to the liquid crystal panel to align the liquid crystal. According to the present invention, the above problems are solved as described below. (1) A method for producing a liquid crystal panel, in which an MVA liquid crystal panel in which a liquid crystal containing a photoreactive substance is sealed is irradiated with light to cause the photoreactive substance to react to form a liquid crystal panel. The method for producing a liquid crystal panel of an alignment portion is characterized in that the first process of irradiating light having a wavelength longer than the absorption end wavelength of the liquid crystal, and the start of the first process, the irradiation is started at a wavelength longer than the absorption end of the liquid crystal. The second process of light of a short wavelength is used to perform alignment processing of the liquid crystal panel. (2) In the above (1), the wavelength range of the light irradiated at the wavelength longer than the absorption end wavelength of the liquid crystal in the first project is 325 nm to 360 nm, and is in the second The short-wavelength light irradiated in the project has a wavelength range of 300 nm to 320 nm. (3) A device for manufacturing a liquid crystal panel, comprising: a support portion for supporting a liquid crystal panel of a VA-type liquid crystal in which a liquid crystal containing a photoreactive substance is sealed, and the liquid crystal panel to be supported by the support portion The light irradiation unit of the light irradiates the light from the light irradiation unit to the liquid crystal panel supported by the support unit, thereby reacting the light in the liquid crystal panel to the inside of the liquid crystal panel. In the apparatus for manufacturing a liquid crystal panel in which the alignment portion is formed, the light irradiation unit is provided with a first light irradiation unit ′ having a light source that emits light having a wavelength longer than the absorption end wavelength of the liquid crystal, and an irradiation unit The second light-irradiating portion of the light source of the light having a wavelength shorter than the absorption end wavelength of the liquid crystal. (4) In the above (3), the support portion for supporting the liquid crystal panel is a means for applying a voltage to the liquid crystal panel when the light from the first light irradiation portion is irradiated. In the present invention, the following effects can be obtained. By irradiating light onto the liquid crystal panel, it is divided into a first light project that irradiates a wavelength longer than the absorption end wavelength of the liquid crystal (for example, a wavelength of 3 20 nm), and a wavelength shorter than the absorption end wavelength of the liquid crystal. The second item of light can be set and controlled independently of the amount of light of a wavelength longer than the wavelength of the absorption end of the liquid crystal and the amount of light of a wavelength shorter than the wavelength of the absorption end of the liquid crystal. Therefore, in the first project, in order to rapidly polymerize most of the ultraviolet ray-reactive material, light having a wavelength longer than the absorption end wavelength of the liquid crystal is set to give a multi-irradiation amount in a short time with high illuminance. In the second project, it is possible to set the amount of light irradiation of a wavelength shorter than the wavelength of the absorption end of the liquid crystal* to exceed the irradiation amount of the polymerization reaction of all the ultraviolet-ray-reactive materials, but the reliability of the decomposition by the liquid crystal is not lowered. The critical enthalpy of the amount of exposure produced. Therefore, the alignment of the liquid crystal panel can be efficiently performed in a short time -15-201109802 without a decrease in the reliability of the residual of the ultraviolet ray-reactive material or a decrease in the reliability of the decomposition of the liquid crystal. [Embodiment] Fig. 3 shows an ith configuration example of a manufacturing apparatus (ultraviolet irradiation apparatus) of a liquid crystal panel used in a method of manufacturing a liquid crystal panel according to an embodiment of the present invention. In the present invention, the light is divided into a wavelength longer than the absorption end wavelength of the liquid crystal (wavelength range: 320 nm to 360 nm), and the polymerization reaction contains most of the ultraviolet light reaction material of the liquid crystal, and the specific liquid crystal is used. The second wavelength of the residual ultraviolet-ray reactive material that is polymerized in the first project to carry out the polymerization of the light having a shorter wavelength at the absorption end (wavelength range of 300 nm to 320 nm) is carried out to perform the alignment treatment of the liquid crystal panel. Therefore, as shown in the figure, the manufacturing apparatus (ultraviolet irradiation apparatus) of the liquid crystal panel of the present embodiment includes the first light irradiation unit 1 that performs the first process and the second light irradiation unit 2 that performs the second process. The first light irradiation unit 1 is provided with a first light irradiator 1 a and a first workpiece stage 3 a on which a liquid crystal panel is placed. In addition, the second light irradiating unit 2 includes the second light irradiator 2a and the second workpiece stage 3b, and the first light irradiator 1 and the second light irradiator 2 respectively indicate six branches. Lamps 1 b, 2b, but in reality, there are 1 to 50 lamps. Further, the number of the lamps can be appropriately selected in accordance with the size of the liquid crystal panel to be processed. The first and second workpiece stages 3a and 3b are support portions for supporting the liquid crystal panel 8, and include a vacuum suction mechanism (not shown) for holding the liquid crystal panel 8. In the case where the temperature of the liquid crystal panel 8 rises during the light irradiation, a cooling mechanism such as a water-cooled pipe may be provided on the workpiece stages 3a and 3b'. The liquid crystal panel 8 has a structure in which a liquid crystal containing an ultraviolet ray-reactive material is sealed between two light-transmitting substrates (glass substrates) as described above, and a plurality of active elements (TFTs) and liquid crystal driving electrodes and a filter are formed on the glass substrate. A color plate, a transparent electrode (ITO), seals the periphery with a sealant. The first workpiece stage 3a is provided with a probe 4 for applying a voltage to the liquid crystal panel 8 placed thereon. The probe 4 is connected to the probe power source 4a. When the first light irradiator 1a is irradiated with light, the tip end of the probe 4 is brought into contact with the electrode of the liquid crystal panel on the first workpiece stage 3a, and a voltage is applied from the probe power source 43. Further, in the second project, light may be applied without applying a voltage to the liquid crystal. Therefore, a mechanism for applying a voltage to the liquid crystal panel 8 may not be provided in the second workpiece stage 3b. The first light irradiator 1a includes the first lamp lb, and the second light irradiator 2a includes the second lamp 2b. In order to illuminate the entire large liquid crystal panel 8 with uniform illuminance, a plurality of lamps 1b, 2b are arranged in the respective light irradiators 1a, 2a. Further, the first lamp group of the first light irradiator A is connected to the power source _c of the first lamp, and the second lamp group of the second light illuminator 2a is the power source 2c connected to the second lamp. In the first project, the liquid crystal was not damaged, and most of the polymerization reaction ultraviolet ray reaction material was carried out in a short time. Therefore, the first lamp 1b attached to the first light irradiator U is light having a wavelength of 320 nm or less (light of a wavelength shorter than a wavelength of 320 nm) radiating an absorption end wavelength not containing liquid crystal, or even containing It is also rare, and the range of light absorption peaks of -17 to 201109802 has a range of 320 nm or more (light of a wavelength longer than the wavelength of 320 ηηι) at the absorption end wavelength of the liquid crystal. As such a lamp, as described above, an iodine excimer lamp or a fluorescent lamp having a wavelength of 3 20 nm or less can be cited. In the second project, a slight amount of ultraviolet-ray reactive material left unreacted in the second-stage project was completely polymerized. Therefore, the second lamp 2b attached to the second light irradiator 2a is a lamp having a peak of light emission in a range of 320 nm or more (light of a wavelength shorter than a wavelength of 320 nm) of the absorption end wavelength of the liquid crystal. . As such a lamp, a fluorescent lamp, a XeCl excimer lamp, and an iodine excimer lamp sealed with ruthenium may be mentioned. As described above, these lamps are not required to emit unnecessary light in the alignment treatment such as infrared light, and can prevent the temperature of the substrate from rising. The detailed construction for the lamp will be explained below. As shown in Fig. 3, since the excimer lamp has a reflection film formed on the lamp body, the mirrors 1d and 2d may not be provided in the light irradiation portion. In the case of, for example, a phosphor lamp in which the reflecting film is not formed, the mirrors Id and 2d are provided in the light-irradiating portions 1 and 2. A workpiece transport mechanism 5 that transports a liquid crystal panel is provided between the first light irradiation unit 1 and the second light irradiation unit 2. In the first light irradiation unit 1 , the workpiece transport mechanism 5 transports the liquid crystal panel 8 of the first process from the first workpiece stage 3 a to the second workpiece stage 3 b of the second light irradiation unit 2 . Further, the power source 1c of the first lamp, the power source 2c of the second lamp, the probe power source 4a, the workpiece transport mechanism 5, and the like are connected to the control unit 7. The control unit 7 controls the turning-off and the irradiation time of the first lamp 1b and the second lamp 2b, and applies the voltage 値 or time of the liquid crystal panel 8 to -18-201109802 in the first process, or conveys the workpiece. The liquid crystal panel 8 is first placed on the first workpiece stage 3a of the first light irradiation unit 1, and is irradiated with light from the first light irradiator 1a while applying a voltage (first item). After the completion of the first work, the liquid crystal panel is placed on the second workpiece stage of the second light irradiation unit by the workpiece transport mechanism, and the light is irradiated from the second irradiator. In addition, the light irradiation in the second project is an irradiation dose in the range of 300 nm to 3 20 nm, and does not exceed the irradiation amount of the polymerization reaction of all the ultraviolet reactive materials, but does not exceed the reliability reduction by the liquid crystal decomposition. The method of the threshold 値 of the irradiation amount is determined in advance by experiments or the like, and is set in the control unit 7. Fig. 4 is a view showing a configuration example of the above-described phosphor lamp, and Fig. 4 is a cross-sectional view showing a plane cut away from a tube axis. The phosphor lamp 10 is a container (light-emitting tube) 11 having an approximately double-tube structure in which the inner tube 1 1 1 and the outer tube 1 1 2 are disposed substantially coaxially, and the both end portions 11A and 11B of the container 11 are sealed. A cylindrical discharge space S is formed inside. A rare gas such as helium, argon or helium is sealed in the discharge space S. The container 11 is made of quartz glass, and a low-softening point glass layer 14 is provided on the inner peripheral surface, and a phosphor layer 15 is provided on the inner peripheral surface of the low-softening point glass layer 14. The low-softening glass layer 14 is, for example, a hard glass using citric acid glass or aluminosilicate glass. Further, the phosphor layer 15 is, for example, an endowment-active magnesium aluminate strontium (La-Mg-Al-O: Ce) phosphor. An electrode 1 2 ' is provided on the inner peripheral surface of the inner tube 1 1 1 and a mesh electrode 13 is provided on the outer peripheral surface of the outer tube 1 1 2 . These electrodes 12, 13 are configured as a dielectric container -19-201109802 1 1 and a discharge space s. The electrodes 1 2, 1 3 are connected to the power supply unit 16 via leads W 1 1 and w 1 2 . When a high-frequency voltage is applied from the power supply device 16, a discharge (so-called dielectric barrier discharge) in which a dielectric medium (1 1 , 1 1 2 ) is formed between the electrodes 1 2 and 1 3, and a helium gas may occur. Ultraviolet light with a wavelength of 1 72 nm. The ultraviolet light obtained here is light for exciting the phosphor, and by irradiating the phosphor layer, ultraviolet light having a center wavelength of about 340 nm is emitted. Fig. 5 shows another configuration example of the phosphor lamp. Figure (a) is a cross-sectional view taken along the plane including the tube axis, and (b) is a cross-sectional view taken along line A - A of (a). In Fig. 5, the lamp 20 has a pair of electrodes 22 and 23, and the electrodes 22 and 23 are disposed on the outer peripheral surface of the container (light-emitting tube) 21, and a protective film 24 is provided on the outer sides of the electrodes 22 and 23. The ultraviolet ray reflection film 25 is provided on the inner surface of the reflection side on the light emission direction side of the inner circumferential surface of the container 2 1 [see Fig. 5 (b)], and a low softening point glass layer 26 is provided inside. A phosphor layer 27 is provided on the inner peripheral surface of the low-softening point glass layer 26. The other configuration is the same as that shown in Fig. 4, and the gas enclosed in the discharge space S in the container 21 is the same as the phosphor used in the phosphor layer 25. When a high-frequency voltage is applied to the electrodes 22, 23, a dielectric barrier discharge is formed between the electrodes 22, 23, and ultraviolet light is generated as described above. Thereby, the phosphor is excited, and ultraviolet light having a center wavelength of about 340 nm is generated by the phosphor layer, and the light is reflected by the ultraviolet reflecting film 25, and is opened by the opening portion where the ultraviolet reflecting film 25-20-201109802 is not provided. Radiated to the outside. Fig. 6 shows the spectral emission spectrum of the phosphor lamp. As shown in the figure, the phosphor lamp emits light having a wavelength of 300 nm to 360 nm or more. Fig. 7 is a view showing a configuration example of an iodine excimer lamp. (a) is an external view showing the entire view, and (b) is a cross-sectional view taken along line AA of (a). The xenon lamp 30 is a dielectric material such as quartz glass, and has a discharge vessel 3 having a substantially square cross section. 1. The container 3 1 has a sealing member 34 disposed in the vicinity of both ends in the longitudinal direction. Further, on the outer surfaces of the upper and lower wall surfaces 35, 36 of the container 31, mesh electrodes 32, 33 are provided so as to face the discharge space S formed inside the container 3 and the dielectric material constituting the container 31. Further, in the inside of the container 31, for example, the ultraviolet ray reflection film 37 containing SiO 2 as a component is formed on the wall surface 36 on the opposite side to the wall surface 35 on the light emission direction side, and the ultraviolet ray generated in the discharge space S is used. The ultraviolet ray reflection film 3 is reflected toward the light emission direction, and is emitted from the wall surface 35 located on the light emission direction side. In addition to the iodine gas enclosed in the inside of the container 31, argon gas or helium gas is sealed as a buffer gas. The total pressure is 4〇~130 kP a. The concentration of the gas is 0.05 to 1.0%, and the emission wavelength is 342 nm. Further, the lamps shown in Figs. 4 and 5 have phosphors on the inner surface of the container, and the lamps shown in Fig. 7 are different in that they do not have a phosphor. However, it is common to use the discharge of the dielectric medium (dielectric barrier discharge). Fig. 8 shows the spectral emission spectrum of the iodine excimer lamp. As shown in the figure, the bowl excimer lamp emits light having a wavelength of 310 nm to 350 nm. -21 - 201109802 The iodine excimer lamp enclosed in 氙 is the 氙 封 氙 在 , , , , , , 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘 碘There is a helium gas. The full pressure is 40~! 3〇 kP a. Among them, the iodine concentration is 0.05 to 1.0%. The concentration of the helium gas is sealed to 0.05 - right. The emission wavelength has a peak at W2 nm and 320 nm, and the relative balance of the entrapment amount of the borrower and the helium gas makes the two of them radiate. Fig. 9 shows the spectroscopic emission of the iodine excimer lamp enclosed in krypton. As shown in the figure, the iodine excimer lamp enclosed in krypton is a light having a wavelength of 3 1 3 50 nm. Further, the iodine excimer lamp enclosed in ruthenium can be freely changed in light amount of about 320 nm by the amount of change. Therefore, by increasing the composition of light having a wavelength of 3 to 20 nm or less, the residual ultraviolet-ray reactive material can be more polymerized, and the processing time can be shortened. Further, when the lamp is used, the amount of light having a wavelength of about 3 20 nm (the magnitude of the peak )) can be changed by changing the amount of encapsulation of the crucible. Therefore, the ratio of light having a wavelength range of 300 nm to 320 nm and the wavelength of light having a wavelength of toxic to nm to 360 nm is set by the ground, and the irradiation of a wavelength of 320 nm or less, which is more than the absorption wavelength at all absorption ends, is easily available. The setting is not exceeded in the range of the critical enthalpy of the amount of irradiation which is reduced by the reliability of the liquid crystal decomposition. The light, the light of the light, the gas, the gas, the gas, the gas, the gas, the gas, the gas, the gas, the gas, the gas, the gas, the gas 0 nm~ more sealed (peak 値 fast and free, can be from β around 3 2 0 of the amount of light, but the resulting -22- 201109802 enclosed 氙 氯 excimer lamp (XeC1 excimer lamp)' is in the representation In the lamp of Fig. 7, chlorine and helium gas are sealed to replace the latter's 'by' to emit light of different wavelengths. Specifically, chlorine gas, helium gas is enclosed, and argon gas is enclosed as a buffer gas. The total pressure is about 3〇kP a. Among them, the concentration of chlorine gas is about 0.5~1.0%, the concentration of helium gas is about 90~95%, and the concentration of argon gas is sealed. 〇~3·〇% The emission wavelength is 3 08 nm °. Figure 10 shows the spectroscopic emission spectrum of the XeCl excimer lamp. As shown in the figure, the XeCl excimer lamp emits a wavelength of 290 nm to 320 nm with a luminescence peak at a wavelength of 3 08 nm. Further, the lamps shown in Fig. 4, Fig. 5, and Fig. 7 are all common in discharge (so-called dielectric barrier discharge) in which a medium is interposed between a pair of electrodes. Fig. 4 and Fig. 5 are shown. The lamp of the figure is coated with a phosphor on the inner surface of the container, and the phosphor is obtained by the phosphor. The desired light, the iodine excimer lamp shown in Fig. 7, the iodine excimer lamp enclosed in ruthenium, and the chlorine excimer lamp enclosed in ruthenium are obtained by illuminating the encapsulates without using the phosphor The desired light is not the same. Further, in the lamp of the structure shown in Fig. 4 and Fig. 5, the phosphor is removed. Of course, an iodine excimer lamp which is an iodine excimer lamp and is enclosed in a crucible can be used. In the lamp of the structure shown in Fig. 7, when a phosphor is applied, the lamp can be formed only by a rare gas such as helium, argon or helium. According to the results of the invention, the amount of irradiation of the liquid crystal containing the ultraviolet ray-reactive material was verified by the amount of -23-201109802. First, it is confirmed that the liquid crystal having a wavelength of 320 nm or less of the liquid crystal containing the ultraviolet ray-reactive material is confirmed. An experiment in which the range of the critical enthalpy of the amount of irradiation generated by the deterioration of the quality of the liquid crystal decomposition is not required to be irradiated. The results are shown in Table 1. [Table 1]
燈的種類 (照射的光的波長範圍） 照射量 J/cm2 液晶的分解 信賴性 1 XeCl準分子燈 20 有 X 2 XeCl準分子燈 15 有 X 3 XeCl準分子燈 10 有 Δ 4 XeCl準分子燈 5 Μ /V、、 〇 5 XeCl準分子燈 2 無 〇 6 XeCl準分子燈 1 inL m Δ 7 無照射 0 Μ >ι\\ X 表1是表示在以〇· 1 w%的濃度含有照射現在一般所使 用的上述波長3 70 nm以下的光就產生聚合反應的丙烯酸酯 系紫外線反應材料（DIC股份有限公司所製）的液晶（默 克股份有限公司所製MJ901213) ’照射約10 J/Cm2來自超 高壓水銀燈的光（藉由濾波器切斷波長320 nm以下的主要 以波長3 5 0 nm〜3 70 nm範圍的光）’對於紫外線反應材料 的殘留率成爲1 0 % (相當於濃度0.0 1 w % )者，變更照射 量來照射來自XeCl準分子燈的光’調查針對於對於照射量 的有無液晶分解與面板的信賴性（畫面的曬印或VHR的降 低，對此的降低）的結果者。 -24- 201109802Type of lamp (wavelength range of irradiated light) Irradiation J/cm2 Decomposition reliability of liquid crystal 1 XeCl excimer lamp 20 X 2 XeCl excimer lamp 15 X 3 XeCl excimer lamp 10 Δ 4 XeCl excimer lamp 5 Μ /V,, 〇5 XeCl excimer lamp 2 No 〇6 XeCl excimer lamp 1 inL m Δ 7 No irradiation 0 Μ >ι\\ X Table 1 shows the irradiation at a concentration of 〇·1 w% The liquid crystal of the acrylate-based ultraviolet-ray-reactive material (made by DIC Co., Ltd.) (MJ901213, manufactured by Merck Co., Ltd.) which generates a polymerization reaction at a wavelength of 3 to 70 nm or less, which is generally used, is irradiated about 10 J/ Cm2 light from an ultra-high pressure mercury lamp (by means of a filter, the wavelength of the wavelength range from 320 nm to 3 70 nm is cut off by a filter). The residual ratio of the ultraviolet-reactive material becomes 10% (equivalent to the concentration). In the case of 0.0 1 w % ), the amount of irradiation is changed to illuminate the light from the XeCl excimer lamp. The investigation is based on the presence or absence of liquid crystal decomposition and the reliability of the panel (the reduction of the printing of the screen or the VHR, and the reduction). The result. -24- 201109802
XeCl準分子燈是如上述地封入有氙氣體與氯氣體的準 分子燈，如第1 〇圖所示地在波長308 nm具有發光的峰値， 具有波長290 nm〜320 nm範圍的光。 如上述表1所示地，當以1 〇 J/cm2以上的照射量照射 來自XeCl準分子燈的波長3 20 nm以下的光，則可看到產生 液晶的分解，而依據此液晶分解的面板的信賴性降低。 一方面，即使照射量爲〇 (無照射）〜1 J/cm2時，也 不會產生液晶的分解，惟面板的信賴性是降低。此爲考量 產生依據紫外線反應材料的殘留的信賴性的降低。又，當 以2 J/cm2〜5 J/cm2的照射量的照射，則不會產生液晶的 分解，而面板的信賴性也良好。這種情形爲表示不會產生 液晶的分解，又所有紫外線反應材料產生聚合反應，而未 殘留紫外線反應材料。 由以上可知，依據波長3 20 nm以下的光的紫外線反應 材料的殘留的信賴性降低不會產生的方式，會超過所有紫 外線反應材料產生聚.合反應的照射量，惟未超過依據液晶 分解的信賴性降低的所產生的照射量的臨界値的範圍，是 在2 J/cm2〜10 J/cm2的照射量。 以下’調查藉由波長320 nm以上的光，反應（聚合） 紫外線反應材料的大部分，而且依據紫外線反應材料的殘 留的信賴性降低不會產生的方式，會超過所有紫外線反應 材料產生聚合反應的照射量，惟以未超過依據液晶分解的 信賴性降低所產生的照射量的臨界値的範圍可照射波長 320 nm&下的光的光源燈或光照射處理的目的來進行以下 -25- 201109802 的實驗。將其結果表示於表2。 [表2] 燈的種類 (照射的光的波長範圍） 照射量 J/cm2 液晶的分解 紫外線反應材料 的殘留率 信賴性 1 XeCl準分子燈 20 有 0% X 2 (DXeCl準分子燈 一②XeCl準分子燈 ① 15 ② 5 Μ 0% 〇 表2是對於在以0 · 1 w %的濃度含有照射現在—般所使 用的上述波長3 70 nm以下的光就產生聚合反應的丙烯酸酯 系紫外線反應材料（DIC股份有限公司所製）的液晶（默 克股份有限公司所製M J 9 6 1 2 1 3 )，以如下的條件照射光 ，調查針對於有無液晶分解與面板的信賴性（畫面的曬印 或VHR的降低，對比的降低）^ 〈條件1 > :以20 J/cm2的照射量照射來自XeCl準分 子燈的波長290 nm〜320 nm的光。 〈條件2> :以15 J/cm2的照射量照射來自XeCl準分 子燈的光之後，以5 J/cm2的的照射量照射來自XeCl準分 子燈的光。碘準分子燈是如上述的第8圖所示地放射波長 310 nm〜360 nm的光，惟波長320 nm以下的光量是對於全 體的光量爲6 %左右而很少。 如上述所示地，在條件1下，不會有紫外線反應材料 的殘留，惟產生液晶的分解又降低面板的信賴性。但是， 在條件2下，液晶的分解或紫外線反應材料的殘留都沒有 ，而面板的信賴性是良好。 -26- 201109802 如此地，首先’進行依碘準分子燈的照射之後，若進 行依XeCl準分子燈的照射，依液晶的分解的信賴性的降低 ，或依紫外線反應材料的殘留的信賴性的降低都沒有，可 製造液晶面板。 如上述所示’如條件2的方式，將光照射分成兩次， 第1次是使用未含有或幾乎未含有波長320 nm以下的光， 惟波長範圍320 nm〜360 nm的放射照度大的光源，而在短 時間進行聚合紫外線反應材料的大部分。 然後，藉由波長範圍300 nm〜320 nm的光進行聚合反 應殘留於液晶內的些微的紫外線反應材料。 第2次的照射，是不會產生依紫外線反應材料的殘留 的信賴性的降低的方式，超過所有紫外線反應材料產生聚 合反應的照射量，惟使用在未超過依液晶分解的信賴性的 降低所產生的照射量的臨界値的範圍可照射的光源。 本條件的情形，藉由來自碘準分子燈的波長3 20 nm〜 3 60 nm的光進行聚合反應著紫外線反應材料的大部分，而 藉由认自XeCl準分子燈的波長290 nm〜3 20 nm的光進行聚 合反應所留下的紫外線反應材料。 使用於第1次的照射的光源燈，及使用於第2次的照射 的光源燈的組合是考量各種，惟例如作爲使用於第1次的 照射的燈，除了使用於上述實驗的碘準分子燈以外，考量 以濾色片等切斷波長3 20 nm以下的螢光體燈等。又，作爲 使用於第2次照射的燈，考量XeCl準分子燈，未切斷波長 3 20 nm以下的螢光體燈，封入氙的碘準分子燈等。 •27- 201109802 如此地，所謂第1工程與第2工程的方式藉由將照射分 成兩次，可變更光源的種類，可獨立波長3 20 nm〜360 nm 範圍的照射量，及波長300 nm〜320 nm範圍的照射量而可 設定控制。因此，在第1工程中，爲了快速地聚合紫外線 反應材料的大部分，設定成以高放射照度在短時間內給予 較多照射量，另一方面，在第2工程中，成爲將波長300 nm〜3 2〇 nm範圍的照射量容易地設定成超過所有紫外線 反應材料產生聚合反應的照射量，惟不會超過依液晶分解 的信賴性降低所產生的照射量的臨界値。 以下，針對於液晶面板的製造裝置（紫外線照射裝置 )的其他構成例加以說明。 在第3圖表示本發明的贲施例的液晶面板的製造裝置 (紫外線照射裝置）的構成例，惟在第1 1圖、第1 2圖、第 13圖表示其他的構成例。又，在第11圖、第12圖、第13圖 中，省略表示控制部與燈電源，探針電源。 第Π圖的紫外線照射裝置是經由框架9上下方向地配 置著第1光照射部1與第2光照射部2。 在第1光照射部1的上面具有第2光照射部2，當完成在 第1光照射部1的光照射的液晶面板（工件）8，是藉由工 件搬運機構5，被搬運至上面的第2光照射部2而進行光照 射。 如此地，上下地配置兩個光照射部，就可減小紫外線 照射裝置的地板面積（軌跡）。 第1 2圖的紫外線照射裝置是將第1燈群1 e與第2燈群2e -28- 201109802 著 內 器⑽ 射 照 光 個 燈 的 以 中 圖 同 第 於 屬 者 示 表 第’ 於又 屬。 者} 示燈 表的 斤 e 0 2 lb群 以燈 面板 上面 6 晶 機液 送置 運載 在在 置是 放 Γ 是台 3 平 台件 平工 件 。 工 動 驅邊 行左 進中 6 圖 機 送 墜 逼 由 藉 下 態 狀 而的 由 移動至右邊。 在工件平台3載置有液晶面板8的狀態下’運送機6被 驅動，而在工件平台3移動至第1光照射部1的第1燈群le下 面的時機，停止運送機6。 點亮第1燈群le的燈lb，則波長範圍320 nm〜360 ηηι 的光被照射在液晶面板8。又，在此光照射時藉由探針4有 電壓被施加於液晶面板8。 當完成依第1燈群le的燈lb的光照射，則運送機6被驅 動，而在仍載置液晶面板8的狀態下，使得工件平台3，被 運送至第2燈群2e的下面。 停止運送機6，而點亮第2燈群2e的燈2b。含有波長 3 20 nm以下光的光被照射在液晶面板8。 當完成依第2燈2b的光照射，則運送機6被驅動，使得 液晶面板8被運出至紫外線照射裝置的外面。 第13圖的紫外線照射裝置是將第1燈lb與第2燈2b交互 地排列收納於一個光照射器1 a內者。 當有液晶面板載置於工件平台3，則點亮第1燈1 b，使 得波長範圍320 nm〜360 nm的光被照射液晶面板8。在此 光照射時藉由探針4，有電壓被施加於液晶面板8。 當完成依第1燈1 b的光照射，則點亮第2燈2b，使得含 •29- 201109802 有波長3 20 nm以下光的光被照射於液晶面板8。此時，第1 燈1 b是被點亮也可以，而熄燈也可以。 在第1 4圖表示從照射比液晶的吸收端波長還要長的波 長的光的第1工程照射切換至照射比液晶的吸收端波長還 要短的波長的光的第2工程的模式的變化。 第1 4 ( a )圖是完成依第1工程的照射（第1照射）之 後，隔著時間上的間隔，進行依第2工程的照射（第2照射 )的模式。例如當使用表示於第3圖或第1 1圖的裝置，則 成爲此種模式。第1照射與第2照射之間的時間，是工件搬 運機構5從第1光照射部1將工件（液晶面板8 )搬運至第2 光照射部2的時間。 第1 4 ( b )圖是完成第1照射之後，立即（未隔著時間 上的間隔地）進行第2照射的模式。例如，當使用表示於 第1 2圖的裝置，則成爲在第1照射後立即開始第2照射之故 ，因而成爲此種模式。 第1 4 ( c )圖是第1照射與第2照射一部分重複的模式 。第1照射是不會分解液晶之故，因而即使與第2照射有重 複（即使照射長時間）也不會有問題。例如，使用表示於 第1 3圖的裝置，就可進行此種模式的照射。 第1 4 ( d )圖是在第2照射中也繼續第1照射（停止第1 照射）的模式。若使用表示於第1 3圖的裝置，則可進行此 種模式的照射。又，若爲表示於第13圖的裝置，也可實施 第1 4 ( a )圖或第1 4 ( b )圖的照射模式❶ 如此地’從第1照射切換至第2照射的時機，是利用裝 -30- 201109802 置的構成存在著各種模式。但是，首先，進行第1照射， 而反應大部分的光反應性材料之後，將留下變少的光反應 性材料進行第2照射成液晶不會分解的程度的順序爲極重 要者。若可實施此種情形，則從第1照射切換至第2照射的 時機，是第1 4圖的任一模式都可以。 【圖式簡單說明】 第1圖是表示液晶對於光的波長的穿透率的圖式。 第2圖是表示液晶面板對於光的波長的吸光度的圖式 〇 第3圖是表示本發明的實施例的液晶面板的製造裝置 的第1構成例的圖式。 第4圖是表示螢光體燈的構成例的圖式。 第5(a)圖及第5(b)圖是表示螢光體燈的其他構成 例的圖式。 第6圖是表示螢光體燈的分光放射光譜的圖式。 第7(a)圖及第7(b)圖是表示碘準分子燈的構成例 的圖式。 第8圖是表示碘準分子燈的分光放射光譜的圖式。 第9圖是表示封入氙的碘準分子燈的分光放射光譜的 圖式。 第10圖是表示XeCl碘準分子燈的分光放射光譜的圖式 〇 第11圖是表示本發明的實施例的液晶面板的製造裝置 -31 - 201109802 的第2構成例的圖式。 第1 2圖是表示本發明的實施例的液晶面板的製造裝置 的第3構成例的圖式。 第1 3圖是表示本發明的實施例的液晶面板的製造裝置 的第4構成例的圖式。 第M(a)圖至第M (d)圖是表示從第1工程照射切 換成第2工程的模式的變化的圖式。 【主要元件符號說明】 1 :第1光照射部 1 a :第〗光照射器 lb :燈 1 c :燈的電源 1 d :反射鏡 1 e :燈群 2 :第2光照射部 2a :第2光照射器 2b :燈 2 c :燈的電源 2d :反射鏡 2e :燈群 3 :工件平台 3 a :第1工件平台 3b :第2工件平台 -32- 201109802 4 :探針 5 :工件搬運機構 6 :運送機 7 :控制部 8 :液晶面板 9 :框架 10、 20、 30:燈 1 1 :容器（發光管） 1 2、1 3 :電極 15、27 :螢光體層 21 :容器（發光管） 22 、 23 :電極 3 1 :放電容器 32 、 33 :電極 24、37 :紫外線反射膜 -33The XeCl excimer lamp is a quasi-molecular lamp in which a helium gas and a chlorine gas are enclosed as described above, and has a peak of luminescence at a wavelength of 308 nm as shown in Fig. 1 and has a wavelength in the range of 290 nm to 320 nm. As shown in the above Table 1, when the light having a wavelength of 3 20 nm or less from the XeCl excimer lamp is irradiated with an irradiation amount of 1 〇J/cm 2 or more, decomposition of the liquid crystal can be observed, and the panel decomposed by the liquid crystal can be seen. The reliability is reduced. On the other hand, even when the irradiation amount is 〇 (no irradiation) 〜1 J/cm2, decomposition of liquid crystal does not occur, but the reliability of the panel is lowered. This is a consideration to reduce the reliability of the residue depending on the ultraviolet ray reactive material. Further, when irradiated with an irradiation amount of 2 J/cm 2 to 5 J/cm 2 , decomposition of the liquid crystal does not occur, and the reliability of the panel is also good. In this case, it means that decomposition of the liquid crystal does not occur, and all of the ultraviolet ray-reactive materials are polymerized without leaving the ultraviolet ray-reactive material. From the above, it can be seen that the reduction in the reliability of the residual ultraviolet-ray reactive material of light having a wavelength of 3 20 nm or less does not occur, and the amount of irradiation of the polymerization reaction of all the ultraviolet-responsive materials is exceeded, but does not exceed the decomposition according to liquid crystal. The range of the critical enthalpy of the amount of irradiation generated by the decrease in reliability is an irradiation amount of 2 J/cm 2 to 10 J/cm 2 . The following 'study by the light of the wavelength of 320 nm or more, reacts (polymerizes) most of the ultraviolet-ray-reactive material, and the polymerization reliability of all the ultraviolet-reactive materials is exceeded in a manner that does not occur depending on the reliability of the residue of the ultraviolet-reactive material. The amount of irradiation is not limited to the range of the critical enthalpy of the amount of irradiation due to the decrease in the reliability of the liquid crystal decomposition. The light source lamp or the light irradiation treatment for the light at a wavelength of 320 nm can be used for the purpose of the following -25-201109802. experiment. The results are shown in Table 2. [Table 2] Type of lamp (wavelength range of irradiated light) Irradiation amount J/cm2 Residual rate of liquid crystal decomposition of UV-reactive material Reliability 1 XeCl excimer lamp 20 has 0% X 2 (DXeCl excimer lamp - 2XeCl standard Molecular lamp 1 15 2 5 Μ 0% 〇 Table 2 is an acrylate-based ultraviolet-ray reactive material which is polymerized at a concentration of 0 · 1 w % and which is irradiated with light of the above-mentioned wavelength of 3 70 nm or less. Liquid crystal (MJ 9 6 1 2 1 3 manufactured by Merck Co., Ltd.) was irradiated with light under the following conditions, and the reliability of the liquid crystal decomposition and the panel was investigated (printing of the screen) Or decrease in VHR, decrease in contrast) ^ <Condition 1 >: Light having a wavelength of 290 nm to 320 nm from a XeCl excimer lamp is irradiated with an irradiation amount of 20 J/cm 2 . <Condition 2 > : 15 J/cm 2 After irradiating the light from the XeCl excimer lamp, the light from the XeCl excimer lamp was irradiated with an irradiation amount of 5 J/cm 2 . The iodine excimer lamp emits a wavelength of 310 nm as shown in Fig. 8 above. 360 nm light, but the amount of light below 320 nm is The amount of light in the whole is about 6%, and as shown above, under the condition 1, there is no residual of the ultraviolet ray reactive material, but the decomposition of the liquid crystal causes the reliability of the panel to be lowered. However, under the condition 2 The decomposition of the liquid crystal or the residual of the ultraviolet ray reaction material is not, and the reliability of the panel is good. -26- 201109802 In this way, first, after the irradiation with the iodine-based excimer lamp, if the XeCl excimer lamp is irradiated, The liquid crystal panel can be manufactured by reducing the reliability of the decomposition of the liquid crystal or the reduction of the reliability of the residual of the ultraviolet ray-reactive material. As described above, the light irradiation is divided into two, as in the case of the condition 2, The second is to use a light source that does not contain or hardly contains light having a wavelength of 320 nm or less, but has a large irradiance in the wavelength range of 320 nm to 360 nm, and performs most of the polymerization of the ultraviolet light-reactive material in a short time. Then, by the wavelength range The light of 300 nm to 320 nm undergoes polymerization to leave some slight ultraviolet reactive material in the liquid crystal. The second irradiation does not produce ultraviolet-dependent reactive materials. The method of reducing the reliability of the residual is more than the irradiation amount of the polymerization reaction of all the ultraviolet-ray-reactive materials, but a light source that can be irradiated in a range that does not exceed the critical value of the irradiation amount due to the decrease in the reliability of the liquid crystal decomposition. In the case of this condition, most of the ultraviolet-reactive material is polymerized by light from a wavelength of 3 20 nm to 3 60 nm from an iodine excimer lamp, and the wavelength of the XeCl excimer lamp is 290 nm to 3 20 The light of nm is subjected to polymerization reaction to leave the ultraviolet reactive material. The combination of the light source lamp used for the first irradiation and the light source lamp used for the second irradiation is considered as a type of lamp used for the first irradiation, except for the iodine excimer used in the above experiment. In addition to the lamp, it is considered to cut a phosphor lamp having a wavelength of 3 to 20 nm or less by a color filter or the like. Further, as a lamp used for the second irradiation, a XeCl excimer lamp is considered, a phosphor lamp having a wavelength of 3 20 nm or less is not cut, and an iodine excimer lamp or the like is sealed. • 27- 201109802 In this way, the first project and the second project can change the type of light source by dividing the irradiation into two, and the irradiation range of the independent wavelength of 3 20 nm to 360 nm and the wavelength of 300 nm~ Control can be set by the amount of irradiation in the range of 320 nm. Therefore, in the first project, in order to rapidly polymerize most of the ultraviolet ray-reactive material, it is set to give a large amount of irradiation in a short time with high irradiance, and in the second project, it is a wavelength of 300 nm. The irradiation amount in the range of 〜3 2 〇 nm is easily set to exceed the irradiation amount of the polymerization reaction of all the ultraviolet ray-reactive materials, but does not exceed the critical enthalpy of the irradiation amount due to the decrease in the reliability of the liquid crystal decomposition. Hereinafter, other configuration examples of the manufacturing apparatus (ultraviolet irradiation apparatus) of the liquid crystal panel will be described. In the third embodiment, a configuration example of a liquid crystal panel manufacturing apparatus (ultraviolet irradiation apparatus) according to an embodiment of the present invention is shown in FIG. 1, but another configuration example is shown in FIG. 1, FIG. 1, and FIG. Further, in the eleventh, twelfth, and thirteenth drawings, the control unit and the lamp power source and the probe power source are omitted. In the ultraviolet irradiation device of the first drawing, the first light irradiation unit 1 and the second light irradiation unit 2 are disposed vertically via the frame 9. The second light irradiation unit 2 is provided on the upper surface of the first light irradiation unit 1 , and the liquid crystal panel (workpiece) 8 that has completed the light irradiation on the first light irradiation unit 1 is transported to the upper surface by the workpiece transport mechanism 5 . The second light irradiation unit 2 performs light irradiation. In this way, by arranging the two light irradiation portions up and down, the floor area (track) of the ultraviolet irradiation device can be reduced. In the ultraviolet irradiation device of Fig. 2, the first lamp group 1 e and the second lamp group 2e -28 - 201109802 are in the middle of the lamp (10), and the light is in the middle of the same figure. . The light of the light meter e 0 2 lb group to the light panel above the 6 crystal machine liquid to carry the carry-on is placed in the flat 3 pieces of flat parts. The driver drives the line to the left to enter the middle. 6 The machine sends the pendant to move from the next state to the right. When the liquid crystal panel 8 is placed on the workpiece stage 3, the conveyor 6 is driven, and when the workpiece stage 3 moves to the lower side of the first lamp group le of the first light irradiation unit 1, the conveyor 6 is stopped. When the lamp lb of the first lamp group le is turned on, light having a wavelength range of 320 nm to 360 ηηι is irradiated onto the liquid crystal panel 8. Further, at the time of this light irradiation, a voltage is applied to the liquid crystal panel 8 by the probe 4. When the light irradiation of the lamp 1b of the first lamp group le is completed, the conveyor 6 is driven, and the workpiece stage 3 is transported to the lower surface of the second lamp group 2e while the liquid crystal panel 8 is still placed. The conveyor 6 is stopped, and the lamp 2b of the second lamp group 2e is turned on. Light containing light having a wavelength of 3 20 nm or less is irradiated onto the liquid crystal panel 8. When the light irradiation by the second lamp 2b is completed, the conveyor 6 is driven so that the liquid crystal panel 8 is carried out to the outside of the ultraviolet irradiation device. The ultraviolet irradiation device of Fig. 13 is such that the first lamp 1b and the second lamp 2b are alternately arranged and housed in one light irradiator 1a. When the liquid crystal panel is placed on the workpiece stage 3, the first lamp 1b is turned on, so that light having a wavelength range of 320 nm to 360 nm is irradiated onto the liquid crystal panel 8. At the time of this light irradiation, a voltage is applied to the liquid crystal panel 8 by the probe 4. When the light irradiation by the first lamp 1b is completed, the second lamp 2b is turned on so that light having a wavelength of 3 to 20 nm or less is irradiated onto the liquid crystal panel 8. At this time, the first lamp 1 b may be turned on, and the light may be turned off. Fig. 14 shows a change in the mode of the second project in which the first engineering illumination of the light having a wavelength longer than the absorption end wavelength of the liquid crystal is switched to the light of the wavelength shorter than the absorption end wavelength of the liquid crystal. . In the case of the irradiation (first irradiation) of the first project, the irradiation according to the second project (second irradiation) is performed at intervals of time. For example, when the device shown in Fig. 3 or Fig. 1 1 is used, this mode is obtained. The time between the first irradiation and the second irradiation is the time during which the workpiece transport mechanism 5 transports the workpiece (liquid crystal panel 8) from the first light irradiation unit 1 to the second light irradiation unit 2. The first 4 (b) is a mode in which the second irradiation is performed immediately after the completion of the first irradiation (without being separated by time). For example, when the apparatus shown in Fig. 2 is used, the second irradiation is started immediately after the first irradiation, and thus this mode is obtained. The first 4 (c) is a pattern in which the first irradiation and the second irradiation are partially repeated. Since the first irradiation does not decompose the liquid crystal, there is no problem even if it is repeated with the second irradiation (even if the irradiation is long). For example, the illumination of this mode can be performed using the apparatus shown in Fig. 13. The first 4 (d) diagram is a mode in which the first irradiation (stopping the first irradiation) is also continued in the second irradiation. If the device shown in Fig. 3 is used, the illumination in this mode can be performed. Further, in the apparatus shown in Fig. 13, the irradiation mode of the first 4 (a) diagram or the first 4 (b) diagram can be performed. The timing of switching from the first irradiation to the second irradiation is as follows. There are various modes in the configuration of -30-201109802. However, first, the first irradiation is performed, and after the majority of the photoreactive material is reacted, it is extremely important that the photoreactive material having a small amount of light-reactive material is left and the liquid crystal is not decomposed. If this is the case, the timing of switching from the first irradiation to the second irradiation may be any of the modes of Fig. 4 . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the transmittance of liquid crystal to the wavelength of light. Fig. 2 is a view showing a first embodiment of a liquid crystal panel manufacturing apparatus according to an embodiment of the present invention. Fig. 3 is a view showing a first configuration example of a liquid crystal panel manufacturing apparatus according to an embodiment of the present invention. Fig. 4 is a view showing an example of the configuration of a phosphor lamp. Fig. 5(a) and Fig. 5(b) are diagrams showing other examples of the configuration of the phosphor lamp. Fig. 6 is a view showing a spectral emission spectrum of a phosphor lamp. Fig. 7(a) and Fig. 7(b) are diagrams showing a configuration example of an iodine excimer lamp. Fig. 8 is a view showing a spectral emission spectrum of an iodine excimer lamp. Fig. 9 is a view showing the spectral emission spectrum of the iodine excimer lamp enclosed in krypton. Fig. 10 is a view showing a spectroscopic emission spectrum of a XeCl iodine excimer lamp. Fig. 11 is a view showing a second configuration example of a liquid crystal panel manufacturing apparatus - 31 - 201109802 according to an embodiment of the present invention. Fig. 1 is a view showing a third configuration example of the apparatus for manufacturing a liquid crystal panel according to the embodiment of the present invention. Fig. 1 is a view showing a fourth configuration example of the apparatus for manufacturing a liquid crystal panel according to the embodiment of the present invention. Figs. M(a) to M(d) are diagrams showing changes in the mode of switching from the first project illumination to the second project. [Description of main component symbols] 1 : First light irradiation unit 1 a : First light irradiator lb : Lamp 1 c : Power supply 1 d of the lamp : Mirror 1 e : Lamp group 2 : Second light irradiation unit 2a : 2 light illuminator 2b: lamp 2 c: lamp power supply 2d: mirror 2e: lamp group 3: workpiece stage 3 a : first workpiece stage 3b: second workpiece stage - 32 - 201109802 4 : probe 5 : workpiece handling Mechanism 6: Conveyor 7: Control unit 8: Liquid crystal panel 9: Frame 10, 20, 30: Lamp 1 1 : Container (light-emitting tube) 1 2, 1 3: Electrode 15, 27: Phosphor layer 21: Container (lighting Tube) 22, 23: Electrode 3 1 : discharge vessel 32, 33: electrode 24, 37: ultraviolet reflection film - 33