201107830 六、發明說明： 【發明所屬之技術領域】 本發明係關於增加孔徑比及内部反射率之邊緣電場切 換型（Fringe-field-switching-mode，FFS-mode)液晶顯示器 (Liquid crystal display，LCD)以及其製造方法，用以改善戶 外能見度。 【先前技術】 一般而言，FFS-modeLCD已被提議用來改善橫向電場 切換型液晶顯示器（in-plane-switching (IPS)-mode LCD)之 孔徑比及.穿透率。 FFS-mode LCD可包括由透明傳導性物質形成之共通 電極（或相對電極）及像素電極，相較於IPS-modeLCD而 言’ FFS-mode LCD增加了孔徑比及穿透率。並且，可控制 的共通電極與像素電極間之距離係較上下層玻璃基板間之 距離小，使得邊緣電場可以在共通電極與像素電極之間形 成。因此’呈現在電極上的每個液晶（liquid crystal, LC)分 子皆可被操控，進而改善穿透率。 習用的FFS-mode LCD已申請及註冊在例如：韓國專 利號 341123、855782 及 849599 中。 上述韓國專利號855782揭示之FFS-mode LCD包含透 明像素電極及配置在該透明共通電極上方之透明共通電 極，兩者之間夾有一絕緣層。在FFS-modeLCD中，LC層 被摩擦配向的方向在基於閘極線的方向上可在5度内，透 4 201107830 月八通電極之其中一端可配置在資料線與透明像素電極之 間’且透明共通電極與透明像素電極之_距離可藉由以 資料線為基礎的方式來控制，以改善資料線周圍之孔徑比 及光穿透率。 此外’韓國專利號849599揭示之哪侧和LCD，苴 :資料線、制共通電極及㈣線周_透明像素電極^ 寬度及排列皆被操控著，使得資料線周圍的Lc得以用不同 於像素區域中央之LC驅動模態的另—Lc驅動模態來驅 動。因此’在資料線上方形成的光屏蔽層可被移除，並可 防止漏光。201107830 VI. Description of the Invention: [Technical Field] The present invention relates to a fringe-field-switching-mode (FFS-mode) liquid crystal display (LCD) for increasing aperture ratio and internal reflectivity. And its manufacturing methods to improve outdoor visibility. [Prior Art] In general, FFS-mode LCD has been proposed to improve the aperture ratio and the transmittance of an in-plane-switching (IPS)-mode LCD. The FFS-mode LCD can include a common electrode (or opposite electrode) and a pixel electrode formed of a transparent conductive material, and the FFS-mode LCD increases the aperture ratio and the transmittance compared to the IPS-mode LCD. Further, the distance between the controllable common electrode and the pixel electrode is smaller than the distance between the upper and lower glass substrates, so that the fringe electric field can be formed between the common electrode and the pixel electrode. Therefore, each liquid crystal (LC) molecule present on the electrode can be manipulated to improve the transmittance. The conventional FFS-mode LCD has been applied for and registered in, for example, Korean Patent Nos. 341123, 855782 and 849599. The FFS-mode LCD disclosed in the above-mentioned Korean Patent No. 855782 comprises a transparent pixel electrode and a transparent common electrode disposed above the transparent common electrode with an insulating layer interposed therebetween. In the FFS-mode LCD, the direction in which the LC layer is rubbed and aligned may be within 5 degrees in the direction based on the gate line, and one end of the eight-pass electrode may be disposed between the data line and the transparent pixel electrode. The distance between the transparent common electrode and the transparent pixel electrode can be controlled by a data line-based method to improve the aperture ratio and the light transmittance around the data line. In addition, which side of the Korean Patent No. 849599 and LCD, 苴: data line, common electrode and (4) line circumference _ transparent pixel electrode ^ width and arrangement are controlled, so that the Lc around the data line can be used differently from the pixel area The central LC drive mode is driven by another Lc drive mode. Therefore, the light shielding layer formed above the data line can be removed and light leakage can be prevented.
LCD 韓國專利號85S782及849S99揭示之FFS_m〇de 可增加戶外能見度及孔徑比，並可達到低功率的操作。然 而，在改善效能方面仍有某些問題尚未解決。 首先，由於光屏蔽層的減少或移除，用以對準上板及 下板所需的邊限(margin)會減少，這會造成顏色的混合，並 因此增加失敗率。根據韓國專利號849599，在資料線的階 狀部分上（stepped portion)，摩擦程序可能會執行的不完 全。由於不完全的摩擦，資料線的階狀部分可能發生漏光， 尤其是相對於摩擦方向的資料線側。 因此，仍然需要發展新的FFS-niode LCD來解決上述 問題。 【發明内容】 本發明係關於具有新堆疊結構及設計之邊緣電場切換 201107830 型液晶顯示器（FFS-mode LCD)。 並且，本發明之FFS-mode LCD係關於移除或減小在 資料線上方形成的光屏蔽層，以改善孔徑比並降低功率消 耗。 此外，本發明係關於一種傳導性反射區域儘量在傳送 區域以外的區域（像是閘極線及資料線）上形成，以最大 化反射區域的面積從而增加戶外能見度之FFS_m〇deLCD。 再者’本發明係關於一種將漏光及顏色混合減到最小 以改善螢幕晝面品質之FFS-mode LCD。 根據本發明的一個態樣提供之邊緣電場切換型液晶顯 示器（FFS-mode LCD)包含下層基板；上層基板；介於下層 及上層基板之間的液晶（Lc)層，其中各別的像素區域被閘 極線及與該閘極線相互交錯的資料線界定在下層基板上； 切換裝置，其包含汲極電極、源極電極、配置在閘極線與 資料線間之每個交叉點的通道區域，FFS_m〇de LCD包含配 置在閘極線及資料線整個區域上方之透明共通電極，該透 明共通電極與該閘極線及該等f料線之間則包括有至少一 第-夾層絕緣層；連接透明共通電極之料性反射結構， 士該傳導性反射結構配置在含有—部分該轉換裝置之該等 資料線及該閘極線的上方；以及配置在透明共通電極及 =^、_上方的像素區域每—者内之透明像素電極並 h有弟—夾層絕緣層介於其間，該透明像素電極包括複 數個狹縫，並電連接至切換裝置之汲極電極。 傳導性反射結構可重疊没極電極邊緣區域之至少一部 6 201107830 分0 透明像素電極的複數個狹縫可與閘極線形成〜^ 角度，LC層被摩擦的方向實質上可平行於閘極線預疋的 為了電連接透明像素電極與切換裝置之涊扠^方向。 導性反射結構可覆蓋除了切換裝置之汲極電極部八品專 外的切換裝置。 區域《之 傳導性反射結構可覆蓋除了切換裝置之—部分汲極： 極及通道區域之外的切換裝置。 $ 根據本發明另一態樣提供之邊緣電場模態液晶顯示器 (FFS-modeLCD)製造方法，該邊緣電場模態液晶顯示器包 含下層基板，上層基板；介於下層及上層基板之間的液晶 (LC)層，其中各別的像素區域被閘極線及相互交錯的資料 線界定在下層基板上·，切換裝置，其包含汲極電極、源極 電極、以及配置在閘極線與資料線間之每個交又點的通道 區域，此方法包含：在下層基板上形成閘極線及閘極電極； 在具有閘極線及閘極電極的下層基板上形成閘極絕緣層； 在閘極絕緣層上形成包括沒極電極、源極電極及通道區域 之切換裝置及形成位於閘極絕緣層上之資料線；除了轉掠 裝置之-部分具有至少—第—絕緣層介於其間之外，在包 括切換裝置及資料線之整個組合結構上形成透明共通電 極；在資聽、_線及切料置部分輯上方形成傳導 性反射結構以電連接至透明共通t極；以及在包括至少有 =崎層錄其間之傳導性㈣結構之組合結構上的傳 素區域之每-者内形成透明像素電極，透明像素電極包招 201107830 複數個狹缝’並電連接至切換裝置之汲極電極。 【實施方式】 本發明之示例性具體實施例將參照所附圖示詳細說明 如下。雖本發明係搭配其示例性具體實施例來顯示與說 明，熟習本技術者可察知，在不悖離本發明之精神與範疇 下，可以做成各種修改。 根據本發明之示例性具體實施例之液晶顯示器（LCD) 可包括下層基板、上層基板及介於下層及上層基板之間的 液aa(LC)層，像素區域可被閘極線與相互交錯而形成之資 料線界定在下層基板上，以施加電壓至LC層。 第1圖係根據本發明一示例性具體實施例在LCD下層 基板上形成之一像素區域之平面圖。第2A圖至第2C圖係 各別沿著第1圖線A_A，、線Β_Βι及線，所繪之剖面圖。 參照第1圖及第2A圖至第2C圖，根據本具體實施例 之FFS-mode LCD可包括排列在下層基板1〇〇上互相交錯 之閘極線120及資料線150,以及作為切換裝置的薄膜電晶 體(Thin-film transistor，TFT)，該薄膜電晶體可配置在閘極 線120與資料線150間的交又點。 透明共通電極Π0及透明像素電極2〇〇可配置在由間 極線120及育料線150界定之每個單位像素區域中，透明 電極170 素f極2QQ具介於其間之夾層絕緣 層190。透明像素電極200可為狹縫型電極，其包括朝向資 料線15〇形成之複數彳目狹縫。雖然對於透明共通電極⑽ 201107830 的形狀沒有特職制，透明共通電極⑺係可為平板形狀。 並且’傳導性反射結構180可配置在透明共通電極17〇 上，並i連接透明共通電極17〇以改善反料及孔徑比。 上層基板（未顯示）可在下層基板100上方形成，並 與下層基板1GG間隔-段預定的距離。上層基板可包括彩 色濾'光及保護膜’並與包括複數個LC分子介於其間之 LC層一起連接下層基板10〇。 本具體貫加例的主要特色係為透明共通電極17〇、透明 像素電極200及傳導性反射結構18〇之排列。因此，不僅 疋透明共通電極170及透明像素電極2〇〇的形狀，堆疊結 構及閘極線120、資料線15〇與夾層絕緣層16〇及19〇的排 列都可適度最佳化，從而最能實現本發明之目的。 特別的是，透明共通電極17〇可能不會在每個單位像 素區域内形成隔離型態，但是可在包括資料線15〇及閘極 線120的整個區域上形成，除了切換裝置（TFT)(或汲極 電極150a)之部分區域外（參照第3D圖）。亦即，透明共 通電極170不會在切換裝置（或汲極電極150a)之部分區 域（參照第3D圖）上形成，因為没極電極150a部分區域 隨後將電連接至透明像素電極200。 上述結構可有益於大尺寸LCD，因為當外部電壓經由 透明共通電極170施加至每個單位像素區域時電阻會變 小。在本具體實施例中，可操控透明共通電極170、透明像 素電極200、閘極線120、資料線150與夾層絕緣層16〇及 190之排列及堆疊位置，使得透明共通電極170可遍佈整個 201107830 下層基板100而形成單一整體。 在本具體實施例中，閘極線120、閘極絕緣層丨3〇、主 動層（active layer ’可形成通道區域14〇 )及資料線150可 在下層基板100上形成，透明共通電極170可在具有閘極 線120、閘極絕緣層13〇、主動層及資料線15〇且有夾層絕 緣層160介於其間之下層基板1〇〇之整個表面上形成。傳 導性反射結構180可被形成來電連接透明共通電極17〇。夾 層絕緣層190可在傳導性反射結構18〇上形成，且透明像 素電極200可堆疊在其上。 上述結構可使LCD的孔徑比大幅增加。 同％，§透明像素電極2〇〇的複數個狹缝形成一預定 的角度Θ時’可以避免資料線15〇周圍的閘極線12〇漏光。 如果LC層被摩擦的方向實質上與閘極線12〇的方向維持平 行，則可將該預定的角度㊀操控在丨至15度的範圍内。 特別的是，角度Θ的操控可考慮到lCD驅動期間測得 的最大穿透率及電壓-穿透率（v〇ltage_transmittance, ν_τ)曲 線的斜率。最好但並非必要，角度㊀可維持在大約7度。 同時，在電連接至透明共通電極17〇之傳導性反射結 構180可由具有高反射率的物質形成，像是(αι)、紹合 金，例如鋁鈥（Al-Nd )、鉬（Μο )、鉬合金，例如鉬鎢 (M〇_W)、銀（Ag)、銀合金、鎢（W)及至少有其一之合 金。傳導性反射結構18〇可在透明共通電極ι7〇上直接與 透明共通電極170接觸，其可減小透明共通電極17〇的電 阻’並在作為反射結構時預防漏光及顏色混合。 201107830 /本具體實施例可不只是最佳化傳導性反射結構ι8〇的 形狀’同時也最佳化傳導性反射結構⑽與其他結構亦即 透明共通電極170、透明像素電極2⑼、資料線15〇、問極 線120及沒極電極l5〇a的排列關係，因而能夠最佳化孔徑 比及反射率。 從LCD之上方看LCD時，提供之傳導性反射結構18〇 可對射入資料線15Q及閘極線12()上層部分的光增加其内 部反射。因此，傳導性反射結構18G可改善内部反射並增 加孔徑比，從而提升戶外能見度。同時，光屏蔽區域不會 在對應閘極線12G及資料線15G的上層基板部分上形成。 換言之，沒有光屏蔽區域可在上層基板上形成，或者是， 光屏蔽區域只會在與切換裝置對應的上層基板部分區域上 形成。 傳導性反射結構180可具有每個單位像素區域的傳導 性反射結構互相連結之結構。亦即，傳導性反射結構18〇 可遍佈整個下層基板100而形成單一整體。更具體而言， 在閘極線120及資料線150上方、以及在切換裝置剩下的 區威上方而非没有形成傳導性反射結構180之區域的上 方傳導丨生反射結構180可電連接透明共通電極17〇。根據 本具體貫施例，孔徑比、反射量及電阻取決於傳導性反射 結構180與其他的結構，亦即透明共通電極17〇、透明像素 電極2〇〇、資料線15〇、閘極線12〇及汲極電極i5〇a的排 列關係。 同日守，上述傳導性反射結構180與其他結構的排列關 201107830 係可適用於本具體實施例之堆疊結構。具體而言，透明共 通電極170可在整個像素區域上形成。在此例中，透明共 通電極170不會在切換裝置之部分區域上形成。傳導性反 射而構180可形成來電連接至透明共通電極17〇,以及包括 複數個狹縫的透明像素電極2〇〇可在有夾層絕緣層19〇介 於其間的每個單位像素上形成。參照第4圖，傳導性反射， 結構180可在除了切換裝置的汲極電極15〇a部分區域之資 · 料線150上方及閘極線12〇上方形成晶格型態。另外，參 照第1圖，傳導性反射結構180可在除了汲極電極15〇&及 切換裝置通道區域一部份之資料線15〇及閘極線12〇上方 形成晶格型態。傳導性反射結構18〇的其他範例顯示在第6 圖及第7圖中。 以下將更詳細說明傳導性反射結構18〇與資料線 150閘極線120及没極電極150a的關係。參照第2B圖及 第2C圖’傳導性反射結構18〇可設置成完整覆蓋資料線 150及閘極線120，且部分重疊透明像素電極2〇〇 (參照D4 及1>5)。距離D4及D5可預防兩個鄰近像素電極2〇〇之間產 生之水平電場所造成的漏光。考慮到製程可行性 (processibility ) ’ D4及D5距離之每一者約可為〇 1至5 〇 微米（μιη)，更具體而言大約為0.5至2·〇微米。 · 同k'，傳導性反射結構180可被形成以包括或覆蓋資 . 料線150及閘極線120來適當調整反射率及穿透率，並預 防由於資料線150及閘極線120階狀差異之摩擦方向而在 資料線150及閘極線120附近發生之漏光及顏色混合。 12 201107830 。、同柃，傳導性反射結構180可重疊汲極電極150a邊緣 區域之至少—部分。在放大的第1圖中，參數（reference characters) D)、1)2及D3代表傳導性反射結構18〇重疊没 極電極150a邊緣區域之距離。考慮到製程可行性，距離 、D2及D3之每一者可皆在〇 5至5微米的範圍内。如第 1圖所示，傳導性反射結構180可藉由距離Di、仏及D3 邠为重豎/及極電極15〇a邊緣區域來預防由於製程期間之階 狀差異造成的漏光。然而’傳導性反射結構18〇也可不重 豐及極電極150a邊緣區域，其他修改的示例性具體實施例 於之後將參照第6圖及第7圖來說明。 本發明人確認由於施加於部分閘極線12〇内之不穩定 摩擦製程而造成漏光的例子，閘極線12〇内之部分區域係 包括平行閘極線120方向之切換裝置中汲極電極15〇a的區 域R。傳導性反射結構18〇部分重疊閘極線12〇邊緣區域 後可以解決漏光的問題。 以下將參照第1圖、第2A圖至第2C圖及第3A圖至 弟3G圖§兒明根據本發明一示例性具體實施例製造 FFS-mode LCD 之方法。 首先參照第3A圖，高傳導性不透明金屬可沉積 (deposited)在下層基板1〇〇上’並藉由圖案化（patterned ) 形成閘極線120。 參照第3B圖，閘極絕緣層130可沉積來覆蓋閘極線 120，非晶石夕（amorphous silicon, a-Si)層及 η 型（n+)非晶 矽層隨後可沉積在閘極絕緣層130上，並藉由圖案化形成 13 201107830 通道區域140。 t照第詞’金屬層可沉積在通道區域刚上，並藉 由圖案化形成，料線150、源極 150a’且第-夾層絕緣層ι6〇可沉積在其及及位尾極 參照第则，透明傳導層可:;二案化形成透 =通電極m。在此例中’透明 佈整個下層基板100而形成單— L」過 極170可在每個單位像素區域息。另夕卜，透明共通電 、參照第3E圖，高反射性金屬可，離型態。 傳導性反射結構， "L積並藉由圖案化形成 像素區域互相連接。該高反^=⑽可使各別的單位 至大約100埃(A)至7_ :根據金屬電阻可沉積 化形成傳導性反射結構18〇。、）的厚度，並藉由圖案 參照第3F圖，第二個十 極no及傳導性反射結構⑽可在透明共通電 成來露出部分祕電極l5Qa ^ ’且接麻CN可形 爽層絕緣層190上。 ^ 透明傳導層可沉積在 參照第3G圖，透明傳導屌 =::。〇，’心15。:=: 成：本上 ★ _用的LCD之光屏蔽區域甚至會在間極 14 201107830 線及貝料線Jl形成，在本具體實施例中， 及/或部分上層基板上甚^ 形成。吾人並可明顯地了解到光屏蔽區2屏：區域的 孔徑比增加。 °°或之面積縮小可使 層基例，_實娜 Δ 素區成之平面圖。第5Α圖係沿著第4 圖線Α-Α所綠之剖面 cr>ra/- 面圖苐5B圖係例示根據本發明另一 不歹’、—A例在咖製造方法中形成傳導性反射結構 之製程平面圖。 為了簡4起見’將主要說明帛4目具體實施例與第1 圖具體實知例之間的差異。帛4圖具體實施例與第（圖具 體實施=要的不同處在於傳導性反射結構⑽的面積。 多、、弟4圖弟5A圖及第5B圖，傳導性反射結構180 可覆蓋除了切換裝置之没極電極H以外的通道區域 140 ’且可在資料線15〇及閘極線12〇上方形成晶格塑態。 根據本具體實施例，4至可藉由在通道區域140上方 形成傳導性反射結構18〇，反射區域即可更加擴大，且完全 沒有光屏蔽層在上層基板上形成 。換言之，與第1圖具體 貫施例相較，光屏蔽層形成的區域可更加地縮小。ϋ且， 不使用光屏蔽層可更有益於第四圖所示之具體實施例。 第6圖及第7圖係根據本發明其他示例性具體實施例 在LCD下層基板上形成之像素區域平面圖。 為了簡潔起見，主要將說明第6圖及第7圖具體實施 例與第1圖及第4圖具體實施例之間的差異。第6圖及第7 15 201107830 圖具體實施例與第1圖及第4圖實施例各別的主要不同處 在於傳導性反射結構180的面積。 具體而言，第6圖具體實施例與第！圖具體實施例的 不同處可在於第6圖的傳導性反射結構⑽只在汲極電極 15 0 a之邊緣區域上形成。 同樣地’第7圖具體實施例與第4圖具體實施例的不 同處在於第7圖的傳導性反射結構⑽只在絲電極15〇a 之邊緣區域上形成。 第6圖及第7圖具體實施例的設置相較於第}圖及第4 例可更有效改善孔徑比。這是_孔徑比會隨 者導f射結構180面積的縮小而增加。然而，即使在 第6圖及第7圖具體實施财，鄰近酿線之切換裝置的 ^區域可被傳導性反射結構重㈣有效·上述漏光的 才據本么月，透明共通電極、透明像素電極及傳導性 反射結構與資料線、間極線及汲極電極的㈣可最佳化， 從而改善孔徑比及反射率。 並且，本發明可以移除或最小化在資料線上方形成的 光屏蔽層以改善孔徑比並降低功率消耗。 θ此外’傳導性反射結構可在傳送區域以外的區域（像 是間極線及資料線）上形成以最大化反射區域從而改善戶 外能見度。 、 根據本电8月，漏光及彥員色混合可減到最小從而 改善螢幕畫面的品質。 16 201107830 熟習本技術者可察知，在不悖離本發明之精神與範疇 下，上述本發明之示例性具體實施例可以做到各種修改。 因此，本發明欲覆蓋這些落在所附申請專利範圍及其同義 内容範®壽中之所有修改。 【圖式簡單說明】 第1圖係根據本發明一示例性具體實施例在液晶顯示 器（LCD)之下層基板上形成之一像素區域之平面圖； 第2A圖至第2C圖係各別沿著第1圖線A-A1、線B-B1 及線C-C'所繪之剖面圖； 第3A圖至第3G圖係例示根據本發明一示例性具體實 施例製造LCD之方法平面圖； 第4圖係根據本發明另一示例性具體實施例在LCD下 層基板上形成之一像素區域之平面圖； 第5A圖係沿著第4圖線A-A'所繪之剖面圖； 第5B圖係例示根據本發明另一示例性具體實施例在 LCD製造方法中形成傳導性反射結構之製程平面圖；以及 第6圖及第7圖係根據本發明其他示例性具體實施例 在LCD下層基板上形成之像素區域之平面圖。 【主要元件符號說明】 100 下層基板 120 間極線 閘極絕緣層 17 130 201107830 140 通道區域 150 資料線 150c 源極電極 150a 汲極電極 160 、 190 夾層絕緣層 170 透明共通電極 180 傳導性反射結構 200 透明像素電極 CN 接觸孔 D]、〇2、D3、D4、D5 距離 R 區域 A-A，、B-B，、C-C丨 剖面線 18LCD Korea's patent number 85S782 and 849S99 reveal that FFS_m〇de can increase outdoor visibility and aperture ratio, and achieve low power operation. However, there are still some issues that remain unresolved in improving performance. First, due to the reduction or removal of the light shielding layer, the margin required to align the upper and lower plates is reduced, which causes color mixing and thus increases the failure rate. According to Korean Patent No. 849599, the friction program may not be performed in a stepped portion of the data line. Due to incomplete friction, light leakage may occur in the stepped portion of the data line, especially on the data line side with respect to the rubbing direction. Therefore, there is still a need to develop a new FFS-niode LCD to solve the above problems. SUMMARY OF THE INVENTION The present invention relates to a fringe electric field switching 201107830 type liquid crystal display (FFS-mode LCD) having a new stack structure and design. Moreover, the FFS-mode LCD of the present invention relates to removing or reducing the light shielding layer formed over the data line to improve the aperture ratio and reduce power consumption. Further, the present invention relates to an FFS_m〇deLCD in which a conductive reflective region is formed as much as possible on a region other than the transfer region (such as a gate line and a data line) to maximize the area of the reflective area to increase outdoor visibility. Furthermore, the present invention relates to an FFS-mode LCD which minimizes light leakage and color mixing to improve the quality of the screen surface. A fringe field switching type liquid crystal display (FFS-mode LCD) according to an aspect of the present invention includes an underlying substrate; an upper substrate; a liquid crystal (Lc) layer interposed between the lower layer and the upper substrate, wherein the respective pixel regions are a gate line and a data line interleaved with the gate line are defined on the lower substrate; a switching device including a drain electrode, a source electrode, and a channel region disposed at each intersection between the gate line and the data line The FFS_m〇de LCD includes a transparent common electrode disposed over the entire area of the gate line and the data line, and the transparent common electrode and the gate line and the f-feed line include at least one first-interlayer insulating layer; Connecting a transparent reflective structure of the transparent common electrode, wherein the conductive reflective structure is disposed on the data line including the portion of the conversion device and the gate line; and disposed on the transparent common electrode and above the ^^, _ The transparent pixel electrode in each of the pixel regions is interposed between the interlayer insulating layer, the transparent pixel electrode includes a plurality of slits, and is electrically connected to the switching device pole. The conductive reflective structure may overlap at least one portion of the edge region of the electrodeless electrode. 6 201107830 points 0 The plurality of slits of the transparent pixel electrode may form an angle with the gate line, and the direction in which the LC layer is rubbed may be substantially parallel to the gate. The line pre-wired is for electrically connecting the transparent pixel electrode and the switching device. The conductive reflective structure can cover a switching device other than the eight electrodes of the switching device. The conductive reflective structure of the region can cover a portion of the switching device other than the switching device: the pole and the switching device outside the channel region. A method for fabricating a fringe electric field modal liquid crystal display (FFS-modeLCD) according to another aspect of the present invention, the fringe electric field modal liquid crystal display comprising an underlying substrate, an upper substrate; and a liquid crystal between the lower layer and the upper substrate (LC) a layer, wherein the respective pixel regions are defined on the underlying substrate by gate lines and mutually interleaved data lines, and the switching device includes a drain electrode, a source electrode, and is disposed between the gate line and the data line Each of the intersecting channel regions, the method includes: forming a gate line and a gate electrode on the lower substrate; forming a gate insulating layer on the lower substrate having the gate line and the gate electrode; and the gate insulating layer Forming a switching device including a gate electrode, a source electrode and a channel region and forming a data line on the gate insulating layer; except that the portion of the sweeping device has at least a first insulating layer interposed therebetween A transparent common electrode is formed on the entire combined structure of the switching device and the data line; a conductive reflective structure is formed on the upper part of the audio-visual, _-line and cutting material portions to electrically connect to the transparent common a t-pole; and a transparent pixel electrode formed in each of the permeation regions on the combined structure including at least the conductivity (four) structure in the middle of the recording, the transparent pixel electrode package 201107830 plural slits 'and electrically connected To the drain electrode of the switching device. [Embodiment] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. While the invention has been shown and described with reference to the exemplary embodiments embodiments A liquid crystal display (LCD) according to an exemplary embodiment of the present invention may include an underlying substrate, an upper substrate, and a liquid aa (LC) layer interposed between the lower layer and the upper substrate, the pixel regions being interlaced by the gate lines The formed data line is defined on the underlying substrate to apply a voltage to the LC layer. 1 is a plan view showing a pixel region formed on a lower substrate of an LCD according to an exemplary embodiment of the present invention. Fig. 2A to Fig. 2C are cross-sectional views taken along line A_A, line Β_Βι and line, respectively. Referring to FIG. 1 and FIG. 2A to FIG. 2C, the FFS-mode LCD according to the present embodiment may include a gate line 120 and a data line 150 which are arranged on the lower substrate 1 and are interdigitated with each other, and as a switching device. A thin film transistor (TFT), which can be disposed at a point of intersection between the gate line 120 and the data line 150. The transparent common electrode Π0 and the transparent pixel electrode 2〇〇 may be disposed in each unit pixel region defined by the polarization line 120 and the cultivating line 150, and the transparent electrode 170 has a sandwiched insulating layer 190 therebetween. The transparent pixel electrode 200 may be a slit type electrode including a plurality of slit slits formed toward the data line 15A. Although there is no special function for the shape of the transparent common electrode (10) 201107830, the transparent common electrode (7) may be in the shape of a flat plate. And, the conductive reflective structure 180 may be disposed on the transparent common electrode 17A, and i is connected to the transparent common electrode 17A to improve the reverse material and the aperture ratio. An upper substrate (not shown) may be formed over the lower substrate 100 and spaced apart from the lower substrate 1GG by a predetermined distance. The upper substrate may include a color filter 'light and a protective film' and is connected to the lower substrate 10A together with an LC layer including a plurality of LC molecules interposed therebetween. The main features of this specific example are the arrangement of the transparent common electrode 17A, the transparent pixel electrode 200, and the conductive reflective structure 18〇. Therefore, not only the shape of the transparent common electrode 170 and the transparent pixel electrode 2, but also the stack structure and the arrangement of the gate line 120, the data line 15A, and the interlayer insulating layers 16〇 and 19〇 can be appropriately optimized, and thus the most The object of the invention can be achieved. In particular, the transparent common electrode 17A may not form an isolation pattern in each unit pixel region, but may be formed over the entire region including the data line 15A and the gate line 120 except for a switching device (TFT) ( Or outside the partial region of the drain electrode 150a) (see FIG. 3D). That is, the transparent common electrode 170 is not formed on a partial region of the switching device (or the gate electrode 150a) (refer to FIG. 3D) because a portion of the electrodeless electrode 150a is subsequently electrically connected to the transparent pixel electrode 200. The above structure can be advantageous for a large-sized LCD because the resistance becomes small when an external voltage is applied to each unit pixel region via the transparent common electrode 170. In this embodiment, the arrangement and stacking positions of the transparent common electrode 170, the transparent pixel electrode 200, the gate line 120, the data line 150, and the interlayer insulating layers 16 and 190 can be controlled, so that the transparent common electrode 170 can be spread throughout the entire 201107830. The lower substrate 100 is formed into a single unit. In this embodiment, the gate line 120, the gate insulating layer 丨3〇, the active layer (the active layer 'formable channel region 14〇), and the data line 150 may be formed on the lower substrate 100, and the transparent common electrode 170 may be It is formed on the entire surface of the substrate 1A having the gate line 120, the gate insulating layer 13A, the active layer and the data line 15 and having the interlayer insulating layer 160 interposed therebetween. The conductive reflective structure 180 can be formed to electrically connect the transparent common electrode 17A. The interlayer insulating layer 190 may be formed on the conductive reflective structure 18, and the transparent pixel electrode 200 may be stacked thereon. The above structure can greatly increase the aperture ratio of the LCD. When the plurality of slits of the transparent pixel electrode 2A are formed at a predetermined angle ’, the light leakage of the gate line 12 around the data line 15〇 can be avoided. If the direction in which the LC layer is rubbed remains substantially parallel to the direction of the gate line 12, the predetermined angle can be manipulated within a range of 丨 to 15 degrees. In particular, the angle Θ can be manipulated to take into account the maximum penetration measured during the lCD drive and the slope of the voltage-transmission rate (v〇ltage_transmittance, ν_τ) curve. Best but not necessary, the angle can be maintained at approximately 7 degrees. Meanwhile, the conductive reflective structure 180 electrically connected to the transparent common electrode 17 can be formed of a substance having high reflectance, such as (αι), sinter alloy, such as aluminum lanthanum (Al-Nd), molybdenum (Μο), molybdenum Alloys such as molybdenum tungsten (M〇_W), silver (Ag), silver alloys, tungsten (W), and alloys of at least one of them. The conductive reflective structure 18A can be directly in contact with the transparent common electrode 170 on the transparent common electrode ι7, which can reduce the resistance of the transparent common electrode 17A and prevent light leakage and color mixing when used as a reflective structure. 201107830 / This embodiment may not only optimize the shape of the conductive reflective structure ι8〇' but also optimize the conductive reflective structure (10) and other structures, that is, the transparent common electrode 170, the transparent pixel electrode 2 (9), the data line 15 The arrangement relationship between the polar line 120 and the electrodeless electrode l5〇a is asked, so that the aperture ratio and the reflectance can be optimized. When the LCD is viewed from above the LCD, the conductive reflective structure 18 is provided to increase the internal reflection of light incident on the data line 15Q and the upper portion of the gate line 12 (). Therefore, the conductive reflective structure 18G can improve internal reflection and increase the aperture ratio, thereby improving outdoor visibility. At the same time, the light shielding region is not formed on the upper substrate portion of the corresponding gate line 12G and the data line 15G. In other words, no light shielding region can be formed on the upper substrate, or the light shielding region can be formed only on the upper substrate portion region corresponding to the switching device. The conductive reflective structure 180 may have a structure in which the conductive reflective structures of each unit pixel region are connected to each other. That is, the conductive reflective structure 18 can be formed throughout the lower substrate 100 to form a single unit. More specifically, the conductive reflective structure 180 can be electrically connected across the gate line 120 and the data line 150, and over the remaining area of the switching device, rather than the area where the conductive reflective structure 180 is not formed. The electrode is 17 〇. According to this embodiment, the aperture ratio, the amount of reflection, and the resistance depend on the conductive reflective structure 180 and other structures, that is, the transparent common electrode 17〇, the transparent pixel electrode 2〇〇, the data line 15〇, and the gate line 12排列 and the arrangement relationship of the drain electrodes i5〇a. On the same day, the above-mentioned conductive reflective structure 180 and the arrangement of other structures can be applied to the stacked structure of the present embodiment. Specifically, the transparent common electrode 170 can be formed over the entire pixel area. In this case, the transparent common electrode 170 is not formed on a partial region of the switching device. The conductive reflective structure 180 can be formed to electrically connect to the transparent common electrode 17A, and the transparent pixel electrode 2 including a plurality of slits can be formed on each unit pixel having the interlayer insulating layer 19 therebetween. Referring to Fig. 4, conductive reflection, structure 180 can form a lattice pattern above the material line 150 in the portion of the gate electrode 15a of the switching device and above the gate line 12A. In addition, referring to Fig. 1, the conductive reflective structure 180 can form a lattice pattern above the data line 15A and the gate line 12A of the drain electrode 15 and the switching device channel region. Other examples of conductive reflective structures 18A are shown in Figures 6 and 7. The relationship between the conductive reflective structure 18A and the data line 150 gate line 120 and the gate electrode 150a will be described in more detail below. Referring to Figures 2B and 2C, the conductive reflective structure 18 can be disposed to completely cover the data line 150 and the gate line 120, and partially overlap the transparent pixel electrode 2 (see D4 and 1 > 5). The distances D4 and D5 prevent light leakage caused by horizontal electric fields generated between two adjacent pixel electrodes 2〇〇. Each of the processibility 'D4 and D5 distances may be about 1 to 5 Å micrometers (μιη), more specifically about 0.5 to 2 〇 micrometers. · With k', the conductive reflective structure 180 can be formed to include or cover the material line 150 and the gate line 120 to appropriately adjust the reflectance and the transmittance, and prevent the data line 150 and the gate line 120 from being stepped. Light leakage and color mixing occurring near the data line 150 and the gate line 120 in the rubbing direction of the difference. 12 201107830. Similarly, the conductive reflective structure 180 may overlap at least a portion of the edge region of the drain electrode 150a. In the enlarged Fig. 1, the reference characters D), 1) 2 and D3 represent the distance at which the conductive reflective structure 18 〇 overlaps the edge region of the electrode electrode 150a. Considering the feasibility of the process, each of the distances, D2 and D3 can be in the range of 5 to 5 microns. As shown in Fig. 1, the conductive reflective structure 180 can prevent light leakage due to the step difference during the process by the distances Di, 仏, and D3 邠 being the edge regions of the vertical/polar electrode 15 〇 a. However, the conductive reflective structure 18 may not be heavy and the edge region of the electrode electrode 150a. Other modified exemplary embodiments will be described later with reference to Figs. 6 and 7. The inventors have confirmed an example of light leakage due to an unstable rubbing process applied to a portion of the gate line 12, and a portion of the region within the gate line 12 includes a gate electrode 15 in a switching device in the direction of the parallel gate line 120. Area R of 〇a. The conductive reflective structure 18〇 partially overlaps the edge region of the gate line 12〇 to solve the problem of light leakage. Hereinafter, a method of manufacturing an FFS-mode LCD according to an exemplary embodiment of the present invention will be described with reference to Figs. 1, 2A to 2C, and 3A to 3G. Referring first to Figure 3A, a highly conductive opaque metal can be deposited on the underlying substrate 1' and patterned to form gate lines 120. Referring to FIG. 3B, a gate insulating layer 130 may be deposited to cover the gate line 120, and an amorphous silicon (a-Si) layer and an n-type (n+) amorphous germanium layer may be deposited on the gate insulating layer. 130, and by forming 13 201107830 channel region 140 by patterning. According to the first word 'metal layer can be deposited on the channel region and formed by patterning, the material line 150, the source 150a' and the first interlayer insulating layer ι6〇 can be deposited in the same The transparent conductive layer can be:; the second case forms a transparent through electrode m. In this example, the entire underlying substrate 100 is transparently formed to form a single-L" via 170 in each unit pixel region. In addition, transparent co-energization, refer to Figure 3E, highly reflective metal, and off-state. The conductive reflective structure, "L product, is interconnected by patterning the pixel regions. The high reversal = (10) allows individual units to be approximately 100 angstroms (A) to 7 _ : a conductive reflective structure 18 可 can be deposited according to the metal resistance. , and the thickness of the film, and by reference to the 3F figure, the second ten pole no and the conductive reflective structure (10) can be transparently co-energized to expose a part of the secret electrode l5Qa ^ 'and the anesthetic CN can be formed 190. ^ The transparent conductive layer can be deposited on the reference 3G, transparent conduction 屌 =::. Oh, heart 15. :=: 成:本上★ The light shielding area of the LCD used is even formed on the interpole 14 201107830 line and the batting line J1, which is formed in this embodiment, and/or part of the upper substrate. We can clearly understand the 2 screen of the light shielding area: the aperture ratio of the area increases. The reduction of the area of °° or the area of the layer can be made into a plan view of the layer. The fifth diagram is along the fourth line Α-Α 绿 绿 cr cr & ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra ra B B B B 根据 根据 根据 B 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据The process plan of the structure. For the sake of brevity 4, the difference between the specific embodiment of Fig. 4 and the concrete example of Fig. 1 will be mainly explained. The specific embodiment and the figure (the specific implementation = the difference is in the area of the conductive reflective structure (10). Multi, the brother 4, the 5A and 5B, the conductive reflective structure 180 can cover the switching device The channel region 140' other than the electrodeless electrode H can form a lattice plastic state above the data line 15A and the gate line 12A. According to this embodiment, 4 can be formed by forming a conductivity over the channel region 140. With the reflective structure 18〇, the reflective area can be further enlarged, and no light shielding layer is formed on the upper substrate at all. In other words, the area formed by the light shielding layer can be further reduced as compared with the specific embodiment of Fig. 1. The use of a light-shielding layer may be more advantageous for the specific embodiment shown in the fourth figure. Figures 6 and 7 are plan views of pixel regions formed on a lower substrate of an LCD according to other exemplary embodiments of the present invention. For the sake of understanding, the differences between the specific embodiments of FIGS. 6 and 7 and the specific embodiments of FIGS. 1 and 4 will be mainly explained. FIG. 6 and 7 15 201107830 FIG. 1 and FIG. 4 figure embodiment separately The main difference lies in the area of the conductive reflective structure 180. Specifically, the difference between the specific embodiment of Fig. 6 and the specific embodiment of Fig. 6 may be that the conductive reflective structure (10) of Fig. 6 is only at the gate electrode 15 0 The edge region of a is formed. Similarly, the difference between the embodiment of Fig. 7 and the embodiment of Fig. 4 is that the conductive reflective structure (10) of Fig. 7 is formed only on the edge region of the wire electrode 15A. The arrangement of the specific embodiment of Fig. 6 and Fig. 7 can improve the aperture ratio more effectively than the first and fourth examples. This is because the _ aperture ratio increases with the reduction of the area of the radiation structure 180. However, even In Fig. 6 and Fig. 7, the area of the switching device adjacent to the brewing line can be weighted by the conductive reflecting structure (4). The light leakage is based on the current month, the transparent common electrode, the transparent pixel electrode and the conductivity. The reflection structure and the data line, the interpole line and the drain electrode (4) can be optimized to improve the aperture ratio and the reflectivity. Moreover, the present invention can remove or minimize the light shielding layer formed over the data line to improve the aperture. Ratio and drop Power consumption. θIn addition, the conductive reflective structure can be formed on areas other than the transmission area (such as the interpolar line and the data line) to maximize the reflection area and improve the outdoor visibility. According to this electric power, the light leaks and the lighter The color mixing can be minimized to improve the quality of the screen. 16 201107830 It is to be understood by those skilled in the art that the above-described exemplary embodiments of the present invention can be modified in various ways without departing from the spirit and scope of the invention. The present invention is intended to cover all such modifications as fall within the scope of the appended claims and the scope of the claims. FIG. 1 is a liquid crystal display (LCD) according to an exemplary embodiment of the present invention. A plan view of one of the pixel regions formed on the lower substrate; FIGS. 2A to 2C are cross-sectional views taken along the first line A-A1, the line B-B1, and the line C-C'; 3 to 3G are plan views illustrating a method of fabricating an LCD according to an exemplary embodiment of the present invention; and FIG. 4 is a view showing an image formed on a lower substrate of an LCD according to another exemplary embodiment of the present invention FIG. 5A is a cross-sectional view taken along line A-A' of FIG. 4; FIG. 5B illustrates a conductive reflective structure formed in an LCD manufacturing method according to another exemplary embodiment of the present invention. A plan view; and FIGS. 6 and 7 are plan views of pixel regions formed on an LCD underlying substrate in accordance with other exemplary embodiments of the present invention. [Main component symbol description] 100 lower layer substrate 120 between the gate and the gate insulating layer 17 130 201107830 140 channel region 150 data line 150c source electrode 150a drain electrode 160, 190 interlayer insulating layer 170 transparent common electrode 180 conductive reflective structure 200 Transparent pixel electrode CN contact hole D], 〇2, D3, D4, D5 distance R area AA, BB, CC丨 section line 18