201044418 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晶片型電阻器及其製造方法，特 別是指一種具有保險絲功能之晶片型保險絲電阻器及其製 造方法。 - 【先前技術】 參閱圖1、2，是我國公告第394962號「晶片電阻器之 電阻調整方法」發明專利案，該案所揭露之晶片電阻器丄包 〇 含有一由絕緣材料所製成之晶片基體11、一形成在晶片基體 11上之電阻器薄膜12、一形成在電阻器薄膜12上之内塗層13 ，以及設於晶片基體n上且分別位於電阻器薄膜12兩侧之二 - 頂部電極10，藉一雷射光束照射該電阻器薄膜12及内塗層 13，用以形成一 L形狀的修整槽丨4，直到測量該電阻器薄膜 12的電阻值位於一預定之可容忍範圍内。接著再於内塗層 13上成型一中間塗層15、於中間塗層15上再形成一外塗層 19、於各頂部電極10上設置一輔助頂部電極16、設置二側 © 邊電極Π，及電鑛一金屬層18(如圖i中假想線所示）。利用 ， I整槽14之㈣形狀及長度達到調整晶片電阻器之電阻值 ^ 〇 由於上述傳統之晶片電阻器1並不具有保險絲功能之設 計，以致當電氣迴路之電流超過額定電流值時，目晶片電 阻器1不會先行熔斷，所以會導致家電用品因過大電流而燒 毀。 因此另有業者研發出一種保險絲電阻器，如圖3所示 3 201044418 ，即我國公告第1284907號「保險絲電阻器之電阻調整方法 」發明專利案，該案主要是在於一由高純度陶瓷材料製成 之棒狀電阻體21表面層疊以導電性材料製成之導電層22, 該導電層22表面再層疊具有溶斷特性之可炼斷元件層η， 该可熔斷元件層23表面上蒸鍍有防止氧化之氧化層24，而 上述之該等構成物20兩端並包圍有罩體25。藉此當過量的 電流通過棒狀電阻體21時，會因為電流量大而使得該可溶 斷元件層23的溫度上升至溶融點’使得該可熔斷元件層^ 產生熔斷的現象。 此種保險絲電阻器雖然具有極低電阻值，及保險絲之 機能’但是因為此種保險絲電阻器體積大，製造過程中必 須仰賴人卫作業生產，而且還需要進行費時又費力的導線（ 圖未不）剪腳作業，另外，該保險絲電阻器在與其他零件進 行組合作㈣’保險絲電m||的導線也較容易發生折損的 内結合保險絲之功能設計 因此，如何在晶片型電阻器 ，成為本發明所欲改良之課題。 【發明内容】 昧^ *判之-目的，即在提供-種電壓超出心 、月b動熔斷之晶片型保險絲電阻器。 、 写之ί =之另—目的，則在提供-種晶片型保險請-器之製造方法，不饴_屯 溝，利用該二㈣ 藉由雷射切割形成二米 阻器的熔斷特性。 離變化以調整晶片型保險絲f 201044418 於疋，本發明晶片型保險絲電阻器包含有： 一絕緣基板； 一電阻層，疊設於該絕緣基板上； —塗佈層，疊設於該電阻層上，且該塗佈層具有一第 一側緣’及-相反於該第-側緣的第二側緣； —第一槽溝，由該塗佈層之筮 . .„ 伸層之第一側緣朝向該第二側緣 並〜第一直線延伸切割而成，且哕 诚'塞+而 x儿这第一槽溝貫穿該電阻 Ο ’ k第一槽溝並具有一遠離該第一侧緣的第一端； 第"槽溝’由s亥塗佈層之笛-/B , * . 至伸層之第—側緣朝向該第一侧緣 線延伸㈣而成，該第二直線與該第一直線 目間隔，該第二槽溝並貫穿該電阻層該第二槽溝 、：：遠離該第二侧緣的第二端，並且定義該第一、二端 之最紐距離為一設定熔斷長度； 一保護塗層，疊設於該塗佈層表面；及 層 多數導接極，設於該絕緣基板上且能夠電連接該電阻BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a wafer type resistor and a method of fabricating the same, and more particularly to a chip type fuse resistor having a fuse function and a method of fabricating the same. - [Prior Art] Refer to Figures 1 and 2, which is the invention patent of "Discharge Resistance Adjustment Method for Chip Resistors" of China No. 394962. The wafer resistor package disclosed in the present invention contains an insulating material. The wafer substrate 11, a resistor film 12 formed on the wafer substrate 11, an inner coating 13 formed on the resistor film 12, and two on the wafer substrate n and located on both sides of the resistor film 12 - The top electrode 10 irradiates the resistor film 12 and the inner coating 13 with a laser beam to form an L-shaped trim groove 4 until the resistance value of the resistor film 12 is measured to be within a predetermined tolerable range. Inside. Then, an intermediate coating layer 15 is formed on the inner coating layer 13, an outer coating layer 19 is formed on the intermediate coating layer 15, an auxiliary top electrode 16 is disposed on each of the top electrodes 10, and two side edge electrodes are disposed. And an electric metal layer 18 (shown as an imaginary line in i). By using the shape and length of the (four) shape of the I full groove 14 to adjust the resistance value of the wafer resistor ^ 〇 because the above-mentioned conventional chip resistor 1 does not have the function of the fuse function, so that when the current of the electrical circuit exceeds the rated current value, The chip resistor 1 does not blow first, so that the household appliance is burnt due to excessive current. Therefore, another manufacturer has developed a fuse resistor, as shown in Figure 3, 3 201044418, which is the invention patent of China's Announcement No. 1284907 "Resistance Adjustment Method of Fuse Resistors". The case is mainly based on a high-purity ceramic material. The surface of the rod-shaped resistor body 21 is laminated with a conductive layer 22 made of a conductive material, and the surface of the conductive layer 22 is further laminated with a resolvable element layer η having a melting property, and the surface of the fusible element layer 23 is vapor-deposited. The oxidized oxide layer 24 is prevented from being surrounded by the cover 25 at both ends of the above-described constituents 20. Thereby, when an excessive current flows through the rod-shaped resistor body 21, the temperature of the strippable element layer 23 rises to the melting point because the amount of current is large, so that the fusible element layer is melted. Although this type of fuse resistor has a very low resistance value and the function of the fuse 'but because of the large size of the fuse resistor, the manufacturing process must rely on the production of human and health work, and it also requires time-consuming and laborious wires (Fig. ) Shearing work, in addition, the fuse resistor is grouped with other parts (4) The fuse of the fuse m|| is also more susceptible to breakage. The function of the internal fuse is designed. Therefore, how to become a wafer type resistor The subject of the invention is to be improved. SUMMARY OF THE INVENTION The purpose of the invention is to provide a chip type fuse resistor in which the voltage exceeds the heart and the moon b is blown. The purpose of writing ί = the other is to provide a method for manufacturing a wafer type insurance device, which is not 饴 屯, and uses the two (4) to form a fuse characteristic of a two-meter resistor by laser cutting. The wafer-type fuse resistor of the present invention comprises: an insulating substrate; a resistive layer stacked on the insulating substrate; a coating layer stacked on the resistive layer And the coating layer has a first side edge 'and a second side edge opposite to the first side edge; - a first groove, the first side of the coating layer The edge is cut toward the second side edge and is extended by the first straight line, and the first groove is inserted through the first groove of the resistor Ο 'k and has a distance away from the first side edge. The first end; the "groove" is formed by the flute-/B, *. of the s coating layer, and the first side edge of the stretch layer is extended toward the first side line (four), the second straight line a first straight line spacing, the second groove extends through the second groove of the resistance layer, is: away from the second end of the second side edge, and defines a maximum distance of the first and second ends as a set fuse a protective coating layer stacked on the surface of the coating layer; and a plurality of conductive electrodes disposed on the insulating substrate and electrically connected The resistor
另 包括： 方面，本發明晶片型保險絲電阻器之製造方法 μ_U)在—絕緣基板上疊設一電阻層，並在該電阻層上疊 δ又二塗佈層’ it塗佈層具有一第一側緣’及一相反於該第 一側緣的第二側緣； j用雷射光束在該電阻層與該塗佈層上切割出一 第—槽溝，κ ^ —第二槽溝’該第一槽溝是由該塗佈層之第 一倒緣朝fS # » ° k第一側緣並沿一第一直線延伸切割而成，且 5 201044418 S亥第一槽溝貫穿該電阻層，該第二槽溝是由該塗佈層之第 二側緣朝向該第一側緣並沿一第二直線延伸切割而成，該 第二直線與該第一直線是彼此相間隔，且該第二槽溝貫穿 該電阻層； (C)於該塗佈層上疊設有一保護塗層。 本發明之功效在於製造方法作業簡捷，且所製成之晶 片型保險絲電阻器具有保險絲之功能，當該晶片型保險絲 電阻器裝配於一電子裝置中，能夠使該電阻層在電壓超出 負荷時自動熔斷，以確保該電子裝置之内部電路元件的使f) 用安全。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之—個較佳實施例的詳細說明中，將可 清楚的呈現。 參閱圖4 5 ’疋本發明晶片型保險絲電阻器3之製造 方法之一較佳實施例，包括有以下步驟： 首先在步驟800巾，是先備置一絕緣基板，此絕緣 基板31可由㉟或陶:是等、絕緣材料所製成。於絕緣基板η， 頂面間隔設有-對頂導接極41，該等頂導接極Μ是由具有， 銀、紅成份之材料所製成。該絕緣基板31側面則分別設有 ”各頂導接極41相連接之侧導接極42 m緣基板3 ^ 頂面疊設-電阻層32’該電阻層32是由具有鎳、鉻及氧化 釕⑽⑹成分之材料燒結所形成。電阻層32頂面再疊設一 塗佈層33 ’至此製成—基礎結構物。配合參閱圖6,該塗 6 201044418 佈層33具有一第一侧緣331，及—相反於該第一侧緣33ι 的第二側緣332。 接著，參閱圖4、6,在步驟801中，是利用一雷射光 束在電阻層32與塗佈層33上切割出一第一槽溝501，及一 第二槽溝502。該第一槽溝5〇1是由該塗佈層33之第一侧 緣331朝向該第二側緣332並沿一第一直線^延伸切割而 成，並且使該第一槽溝501貫穿該電阻層32，且該第一槽 溝501具有一遠離該第一側緣331的第一端5〇3。In addition, the method for manufacturing a wafer type fuse resistor of the present invention has a resistive layer stacked on an insulating substrate, and a coating layer δ and a coating layer on the resistive layer have a first coating layer a side edge 'and a second side edge opposite to the first side edge; j using a laser beam to cut a first groove on the resistive layer and the coating layer, κ ^ - second groove The first groove is formed by cutting the first edge of the coating layer toward the first side edge of the fS # » ° k and extending along a first straight line, and the first groove of the 5 201044418 S is penetrated through the resistance layer, The second groove is formed by the second side edge of the coating layer facing the first side edge and extending along a second straight line, the second straight line and the first straight line are spaced apart from each other, and the second groove The groove penetrates the resistance layer; (C) a protective coating layer is stacked on the coating layer. The invention has the advantages that the manufacturing method is simple and the fabrication of the wafer type fuse resistor has the function of a fuse. When the wafer type fuse resistor is mounted in an electronic device, the resistance layer can be automatically turned on when the voltage exceeds the load. Fuse to ensure that the internal circuit components of the electronic device are safe to use. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 4 5', a preferred embodiment of the manufacturing method of the wafer type fuse resistor 3 of the present invention comprises the following steps: First, in step 800, an insulating substrate is prepared, and the insulating substrate 31 can be 35 or ceramic. : It is made of insulating material. On the insulating substrate η, the top surface is provided with a pair of top conductive terminals 41 which are made of a material having silver and red components. The side surface of the insulating substrate 31 is respectively provided with a side guiding electrode 42 connected to each of the top conductive terminals 41, a substrate 3, a top surface stacked-resistive layer 32', and the resistive layer 32 is made of nickel, chromium and oxide. The material of the component (10) and (6) is formed by sintering. The top surface of the resistor layer 32 is further laminated with a coating layer 33' to be formed as a base structure. Referring to FIG. 6, the coating layer 6 201044418 has a first side edge 331 And - opposite to the second side edge 332 of the first side edge 33. Next, referring to Figures 4 and 6, in step 801, a laser beam is used to cut a layer on the resistive layer 32 and the coating layer 33. a first groove 501, and a second groove 502. The first groove 〇1 is cut from the first side edge 331 of the coating layer 33 toward the second side edge 332 and along a first straight line The first trench 501 extends through the resistive layer 32, and the first trench 501 has a first end 5〇3 away from the first side edge 331.
該第二槽溝502是由塗佈層33之第二側緣332向該第 一側緣331並沿一第二直線L2延伸切割而成，並使該第二 槽溝502貫穿該電阻層32。其中，該第一直線Ll與該第二 直線L2是彼此間隔且相平行。另外，該第二槽溝5〇2具有 一遠離該第二側緣332的第二端504。 在本實施例中，該第一端503與該第二端5〇4是位於 一第二直線L3上，而該第三直線“是位於該第一側緣33 j 與該第二側緣332之間且與各該第一、二側緣33〖、332相 平行，而且該第一、二槽溝5〇1、5〇2的長度相等。此外並 疋義该第一、一端503、504之間的最短距離為一設定炫斷 長度R，其間並存在一熔斷電壓，例如：當設定的熔斷電壓 為2.24V時，配合電阻值為1R的晶片型保險絲電阻器3， 其所設定熔斷長度為0.5mm;當設定的熔斷電壓為7〇7v 時，配合電阻值為10R的晶片型保險絲電阻器3，其所設定 熔斷長度為〇.8mm。 配合參閱圖4、5，在步驟8〇2中，是以含有環氧樹脂 7 201044418 成份之材料在該塗佈層33上冷太 上土佈成型一保護塗層34。至此 p間捷地製成本發明之晶片型保險絲電阻器3。 本發月之製w方法在雷射的步驟中，同 觸該等頂導接極41，直 牧 直至電阻層32的電阻值位於一預定的 可容忍範圍為止，特別說明的是，本發明晶片型保險絲電 阻器3之最終電阻值的大小是取決於第一槽溝5〇1與第二 槽溝502的長度調整，也就0约 也就疋說’在雷射切割的過程中， 控制電阻值可如圖7所示切名丨&够 所不切割的第一、二槽溝501、502略 微延伸超過該第三直線L3，或是如圖8所示1…二槽 溝5〇1、502是位於該第三直線。的兩侧。 再者’如圖9、10所示，所切割的第-、二槽溝501、 502也可以是不同長度，亦即第三直線L3與各該第一、二 側緣331、332之間的距離不相等。 參閱圖5、6’本發明利用上述方法所製成之晶片型保 險絲電阻器3之結構包括有一絕緣基板31、一設於絕緣基 板上3!上之電阻層32、一設於電阻層32上之塗佈層& -設於塗佈層33表面之保護塗層34，及多數設於絕緣基板 31上之導接極（即頂導接極41、側導接極42)。其中塗佈層 33與電阻層32上並貫穿切割形成有—第一槽溝5〇1及一第 二槽溝502,該等槽溝501、5〇2的設置形態已如上述。The second trench 502 is formed by extending the second side edge 332 of the coating layer 33 toward the first side edge 331 along a second straight line L2, and the second trench 502 is penetrated through the resistive layer 32. . The first straight line L1 and the second straight line L2 are spaced apart from each other and are parallel. Additionally, the second slot 5〇2 has a second end 504 that is remote from the second side edge 332. In this embodiment, the first end 503 and the second end 5〇4 are located on a second line L3, and the third line “is located at the first side edge 33 j and the second side edge 332 . And the first and second side edges 33, 332 are parallel with each other, and the lengths of the first and second grooves 5〇1, 5〇2 are equal. Further, the first end, one end 503, 504 are defined. The shortest distance between them is a set breaking length R, and there is a fuse voltage therebetween. For example, when the set fuse voltage is 2.24V, the chip type fuse resistor 3 with a resistance value of 1R is set, and the fuse length is set. 0.5mm; when the set fuse voltage is 7〇7v, the chip type fuse resistor 3 with a resistance value of 10R has a set fuse length of 〇.8mm. Referring to Figures 4 and 5, in step 8〇2 In the middle, a protective coating 34 is formed on the coating layer 33 by using a material containing the epoxy resin 7 201044418. The wafer type fuse resistor 3 of the present invention is formed. In the step of laser, in the step of laser, the top electrode 41 is touched, and the grazing is carried out until the resistive layer 32 The resistance value is located within a predetermined tolerable range. Specifically, the final resistance value of the wafer type fuse resistor 3 of the present invention is determined by the length of the first groove 5〇1 and the second groove 502. In other words, in the process of laser cutting, the control resistance value can be as shown in Fig. 7 and the first and second grooves 501 and 502 which are not cut are slightly extended beyond the first The three straight lines L3, or as shown in Fig. 8, 1...the two grooves 5〇1, 502 are located on both sides of the third straight line. Further, as shown in Figs. The grooves 501, 502 may also be of different lengths, that is, the distance between the third straight line L3 and each of the first and second side edges 331, 332 is not equal. Referring to Figures 5 and 6', the present invention is made by the above method. The structure of the wafer type fuse resistor 3 includes an insulating substrate 31, a resistive layer 32 disposed on the insulating substrate 3, a coating layer disposed on the resistive layer 32, and a surface of the coating layer 33. The protective coating 34 and a plurality of conductive electrodes (ie, the top conductive contact 41 and the side conductive contact 42) are provided on the insulating substrate 31. In the coating layer 33 and resistive layer 32 and formed with a through-cut - 5〇1 first groove and a second groove 502, such groove has been arranged as described above 501,5〇2 form.
在使用上’當晶片型保險絲電阻器3裝配於一電子裝 置（圖未示）中，該晶片型保險絲電阻器3之電壓超過其炼斷 電壓’將使該電阻層32隨即溶斷，因而能確保該電子裝置 之内部電路元件的使用安全。另外藉由調整設定熔斷長；R 201044418 ’可控制該晶片型保險絲電阻器3之熔斷電壓大小。 再者，參閱圖4、11，在步驟801中，雷射光束更可在 第一槽溝501之第一端503及第二槽溝502之第二端5〇4 進—步分別朝相反方向切割延伸形成有一第一側溝5〇5，及 一第二側溝506。該等側溝505、506之長度亦能提供調整 電阻值之作用。 綜上所述，本發明之製造方法於作業上相當簡單迅捷 ，而所製成之晶片型保險絲電阻器3不但具有體積小之優 點更具有保險絲之功能，當該晶片型保險絲電阻器3裝 配於一電子裝f中’能夠使該電阻@ 32在電壓超出負荷時 自動熔斷，以確保該電子裝置之内部電路元件的使用安全 ’故峰實能達成上述本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾’皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖面圖，說明我國公告第394962號「晶片電 阻器之電阻調整方法」發明專利案； 圖2是一不意圖，說明該公告第394962號專利案之電 阻器薄膜及内塗層藉雷射光束照射而形成一 L形狀的修整 槽； 圖3是一剖面圖，說明我國公告第12849〇7號「保險絲 電阻器之電阻調整方法」發明專利案； 9 201044418 明晶片型保險絲電阻 圖4是· 一方塊流程圖，說明本考表 器之製造方法之一較佳實施例； 直線上’該第三直線是位於該第 且與各該第一、二側緣相平行， 長度相等； 圖5是一放大剖視圖 器之一較佳實施例；及 圖6是一俯視示意圖， 之第一溝槽的第一端與該第 說明本發明晶片型保險絲電阻 說明該較佳實施例經雷射切割 二溝槽的第二端是位於該第三 一側緣與該第二侧緣之間 且第一溝槽與第二溝槽的 圖7是-俯視示意圖，說明該較佳實施例經雷射切割 之第-溝槽的第-端與該第二溝槽的第二端是延伸超過該 第二直線上，該第三直線是位於該第—側緣與該第二側緣 之間且與各該第—、二側緣相平行，且第—溝槽與第二溝 槽的長度相等； 槽的長度相等； 圖8疋一俯視不意圖，說明該較佳實施例經雷射切割 之第-溝槽的第一端與該第二溝槽的第二端是位於該第： 直線的兩侧’该第三直線是位於該第一側緣與該第二侧緣 之間且與各該第一、二側緣相平行，且第一溝槽與第二溝 圖9、10是一俯視示意圖，說明該較佳實施例經雷射 切割之第一溝槽的第一端與該第二溝槽的第二端是位於該 第直線上，該第三直線是位於該第一側緣與該第二側緣 之間且與各該第一、二侧緣相平行’且第—溝槽與第二溝 槽的長度不相等；及 10 201044418In use, when the chip type fuse resistor 3 is mounted in an electronic device (not shown), the voltage of the chip type fuse resistor 3 exceeds its refining voltage', the resistor layer 32 is immediately dissolved, thereby enabling Ensure that the internal circuit components of the electronic device are safe to use. In addition, the fuse length is adjusted by adjusting; R 201044418 ' can control the fuse voltage of the chip type fuse resistor 3. Furthermore, referring to FIG. 4 and FIG. 11, in step 801, the laser beam can be further moved in the opposite direction at the first end 503 of the first groove 501 and the second end 5〇4 of the second groove 502. The cutting extension is formed with a first side groove 5〇5 and a second side groove 506. The length of the side grooves 505, 506 also provides the effect of adjusting the resistance value. In summary, the manufacturing method of the present invention is relatively simple and quick in operation, and the fabricated wafer type fuse resistor 3 has the advantages of small volume and fuse function, when the chip type fuse resistor 3 is mounted on In an electronic device, 'the resistor@32 can be automatically blown when the voltage exceeds the load to ensure the safe use of the internal circuit components of the electronic device." Therefore, the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change and modification made by the patent application scope and the description of the invention. All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing the invention patent of "Resistance Adjustment Method of Chip Resistor" of No. 394962 of China; FIG. 2 is a non-intentional description of the resistor of the publication No. 394962 The film and the inner coating are irradiated by a laser beam to form an L-shaped dressing groove; FIG. 3 is a cross-sectional view showing the invention patent of "Resistance Adjustment Method of Fuse Resistor" of China Patent No. 12849〇7; 9 201044418 Wafer-type fuse resistor Figure 4 is a block diagram showing a preferred embodiment of the method of manufacturing the meter; the third line is located on the line and is adjacent to the first and second sides Parallel, equal length; FIG. 5 is a preferred embodiment of an enlarged cross-sectional view; and FIG. 6 is a top plan view showing the first end of the first trench and the description of the wafer-type fuse resistor of the present invention. The second end of the laser cutting the two trenches is located between the third side edge and the second side edge, and the first trench and the second trench are in a top view, illustrating the comparison. Good example The first end of the first groove of the laser cutting and the second end of the second groove extend beyond the second line, and the third line is located between the first side edge and the second side edge And parallel to each of the first and second side edges, and the lengths of the first groove and the second groove are equal; the lengths of the grooves are equal; FIG. 8 is a top view, not intended to illustrate the preferred embodiment of the laser cutting a first end of the first groove and a second end of the second groove are located on both sides of the first line: the third line is located between the first side edge and the second side edge and Each of the first and second side edges is parallel, and the first trench and the second trenches 9 and 10 are top plan views illustrating the first end of the first trench that is laser-cut by the preferred embodiment. a second end of the second groove is located on the first line, the third line is located between the first side edge and the second side edge and is parallel to each of the first and second side edges and The length of the trench and the second trench are not equal; and 10 201044418
圖11是一俯視示意圖，說明該較佳實施例經雷射切割 之第一溝槽的第一端與該第二溝槽的第二端是位於該第三 直線上’且第一端及第二端並分別朝相反方向切割延伸形 成有一第一側溝，及一第二側溝。 11 201044418 【主要元件符號說明】 3晶片型保險絲電阻器 31絕緣基板 3 2電阻層 3 3塗佈層 331第一側緣 332第二側緣 34保護塗層 41頂導接極 42側導接極 501第一槽溝 502第二槽溝 503第一端 504第二端 800、801、802 步驟11 is a top plan view showing the first end of the laser-cut first trench and the second end of the second trench on the third line, and the first end and the first end The two ends are respectively cut and extended in opposite directions to form a first side groove and a second side groove. 11 201044418 [Description of main component symbols] 3 chip type fuse resistor 31 insulating substrate 3 2 resistance layer 3 3 coating layer 331 first side edge 332 second side edge 34 protection coating 41 top conduction electrode 42 side conduction junction 501 first groove 502 second groove 503 first end 504 second end 800, 801, 802 steps
Li、L2、L3 直線 R熔斷長度 12Li, L2, L3 straight line R fuse length 12