TW201033320A - Multi-layer adhesive film for semiconductor device and dicing die bonding film comprising the same - Google Patents

Abstract

An adhesive layer for semiconductor devices and a multi-layer adhesive film using the same are disclosed. In order to prevent deterioration in reliability of semiconductor chips caused by movement of transition metals and transition metal ions, the adhesive film includes an adhesive layer containing a functional group that combines with transition metal ions to oxidize or reduce the transition metal ions, thereby significantly lowering mobility of the transition metals. The adhesive film further includes an adhesive layer which secures flowability in consideration of a subsequent wire bonding process. The adhesive film enhances stability in performance of a semiconductor device, guarantees dimensional stability, and increases tensile strength, thereby improving reliability in a semiconductor chip bonding process.

Description

201033320 VI. INSTRUCTIONS: [Mings of the genus of the genus] The invention relates to a multilayer adhesive film for a semiconductor device and a diced die bond comprising the multilayer adhesive film . More particularly, the present invention relates to a multilayer adhesive film comprising an adhesive film having a functional group for removing a transition metal to maximize the operational efficiency of a semiconductor device during or after a semiconductor method, and by leaving The reliability of transition metal impurities on a semiconductor wafer or transition metal ions penetrating into an adhesive interface, and a diced die-bonding film comprising the multilayer adhesive film. C. Prior Art - Description of the Related Art Generally, silver paste is used to bond a semiconductor device or a semiconductor device and a supporting member. Due to the recent trend toward smaller size and larger capacity semiconductor devices, the support components need to be smaller and more precise. In this regard, silver secret is not suitable because it protrudes from the semi-conducting position or causes the semiconductor device to tilt. Therefore, it is difficult to control the thickness caused by the combination of the wires. Therefore, an adhesive film is widely used in place of silver paste. Adhesive film for semiconductor combination _ general system and - cutting film used. The K-film refers to a film that is fixed by a semiconductor wafer. The cutting method is a method of cutting a semiconductor wafer into a web, followed by methods such as expansion, picking, and mounting. The film can be applied to the base film by using a υν-m or other curable adhesive (such as 201033320 Λ

A is formed by a film having a structure mainly composed of vinyl chloride or polyolefin, and a film mainly composed of PET is laminated thereon. Meanwhile, a conventional adhesive film for a semiconductor device is attached to a semiconductor wafer, and a dicing film is stacked thereon, followed by cutting according to a cutting method. However, in recent years, semiconductor adhesives for cutting grain bonds have been prepared by a simple method. A dicing film (from which a PET film is removed) and an adhesive film are combined into a film, and a semiconductor wafer is attached thereto, and then cut according to a cutting method. The adhesive film is generally composed of a composition having a main component of an epoxy resin which is excellent in durability after curing. In a backgrinding, dicing, and die bonding method comprising a wafer, various ionic impurities are infiltrated into a semiconductor wafer, and the transition metal is known to cause, inter alia, damage to the electrical function of the semiconductor wafer or to induce operational misalignment of a circuit. Therefore, it is necessary to remove the transition metal or take measures to avoid its damage. However, a remarkable method of removing harmful ionic impurities without deteriorating the properties of the adhesive film has not been developed. In order to solve such problems of the related art, the present invention provides a multilayer adhesive film for a semiconductor device which solves a semiconductor wafer caused by transition metal impurities remaining on a semiconductor wafer or transition metal ions doped into an adhesion interface. The reliability is reduced, the ability to reduce the transition metal and the fluidity adjustment property are ensured, and a satisfactory tensile strength is exhibited, and therefore, the film is not cut but is formed stably. SUMMARY OF THE INVENTION 201033320 One aspect of the present invention provides a multilayer adhesive film for a semiconductor device. The multilayer adhesive film for a semiconductor device includes a first adhesive layer disposed adjacent to a base film; and a second adhesive layer adjacent to the first adhesive layer, wherein each of the first adhesive layer and the second adhesive layer One comprising a monomer having a monomer that oxidizes or reduces a transition metal or a functional group that reduces the mobility of the transition metal to remove the transition metal, a single system with a functional group that scavenges the transition metal to correlate The amount of the agent is present in an amount of from about 20 to about 40% by weight (wt%), the first adhesive layer having a total thickness of the adhesive layer of from about 2 to about 30%, and the first adhesive layer having a second adhesion The layer is larger than the combined dose. The functional group for scavenging the transition metal may comprise at least one selected from the group consisting of -CN, -COOH, -NCO, -SH, and -NH2. The first adhesive layer can have a bonding dose of from about 30 to 75% by weight based on the total weight of the first adhesive layer. The first adhesive layer may comprise from about 30 to about 75% by weight of the bonding agent, from about 15 φ to about 60% by weight of the epoxy resin, from about 1 to about 15% by weight of the phenol curable tree sap, and from about 0.01 to about 2% by weight of a curing catalyst. The second adhesive layer may comprise from about 10 to about 30% by weight of the bonding agent, from about 20 to about 6% by weight of the epoxy resin, from about 10 to about 40% by weight of the curable tree, and the force of 0.01+ to About 2% by weight of the curing catalyst. At least one of each of the 'layer' and the second adhesive layer may further contain an additive for removing the transition metal. The epoxy tree is known to have an epoxy equivalent weight of from about just 1,500 g/eq. The epoxy resin may contain about 50% by weight or more of the multifunctional epoxy. 5 201033320 The phenol curable resin may have a hydroxyl equivalent weight of from about 100 to about 600 g/eq. The phenol curable resin may contain about 50% by weight or more of a phenol resin. According to another aspect of the present invention, a cut grain bonding film contains the above-mentioned multilayer adhesive film. According to another aspect of the invention, a cut grain bonded film comprises the above-described multilayer adhesive film. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a multilayer adhesive film according to an embodiment of the present invention; and FIG. 2 is a schematic cross-sectional view showing a cut grain bonding film having a multilayer adhesive film according to an embodiment of the present invention; And Fig. 3 is a cross-sectional view showing an example of a semiconductor device having a multilayer adhesive film according to an embodiment of the present invention. [Embodiment 3] Detailed Description of the Embodiments The terms used herein are defined in consideration of the functions of the present invention, and may be changed depending on the habit or intention of the user or the operator. Therefore, the definition of such terms is to be based on the overall disclosure shown here. Hereinafter, the term "(meth)acrylyl" is defined to include a mercaptopropenyl group and a propenyl group. Again, unless otherwise defined, the amounts used herein are based on solids content. The present invention relates to a multilayer adhesive film for use in a semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing a multilayer adhesive film in accordance with an embodiment of the present invention. In the first embodiment, the multilayer adhesive film for a semiconductor device according to this embodiment comprises a first adhesive layer 150 and a second adhesive layer 201033320 adjacent to the first adhesive layer. The first adhesive layer 150 may abut a base film. The first adhesive layer comprises from about 20 to about 40% by weight of a transition metal scavenger containing monomer based on the amount of binder. In the illustrated embodiment, the first adhesive layer can comprise from about 25 to about 35 weight percent of the transition metal scavenger containing monomer, based on the amount of binder. According to an embodiment, the first adhesive layer may contain a binder and a curable component. In another embodiment, the first adhesive layer may contain a binder, a curable component, and an organic solvent. In another embodiment, the first adhesive layer may further contain additives such as a curing catalyst, a catalyst, and a filler. The second adhesive layer may contain from about 20 to about 40% by weight of the monomer containing the transition metal scavenger based on the amount of the binder. In the illustrated embodiment, the second adhesive layer can comprise from about 25 to about 35 weight percent of the transition metal scavenger containing monomer based on the amount of binder. According to an embodiment, the second adhesive layer may contain a binder and a curable component. In another embodiment, the second adhesive layer may contain a binder, a curable component, and an organic solvent. In another embodiment, the second adhesive layer may further contain additives such as a curing catalyst, a sinter coupling agent, and a filler. Examples of the binder include, but are not limited to, a (meth)acrylic polymer, a polymer containing an NCO group, a polymer containing an epoxy group, and the like. In the present invention, a functional group which oxidizes or reduces the transition metal or lowers the mobility of the transition metal is added to the binder, whereby the transition metal removal is suppressed while maintaining the properties of the adhesive film. In an exemplary embodiment, the bonding agent can be a (meth)acrylic polymer. 7 201033320 Examples of curable components include, without limitation, epoxy resin, urethane resin, enamel resin, polyester resin, phenol curable resin, amine-based curing resin, melanin curing resin, urea curing resin , an acid anhydride curing resin, and the like. In the illustrated embodiment, the curable component can be an epoxy resin, a phenol curable resin, or a mixture thereof. The first or second adhesive layer of the present invention contains a functional group for removing a transition metal (for example, -CN, -COOH, -NCO, -SH) added to at least one of a binder, a curable component and an organic solvent. And -NH2), whereby the transition metal mobility and the fluidity are ensured to a considerable extent. The subsequent components used to prepare the adhesive film according to the present invention will be described in detail. <Binder>. In one embodiment, the binder may comprise a (meth)acrylic polymer. The binder is a rubber component required to form a film, and may contain a hydroxyl group, a carbonyl group, or an epoxy group. The binder of the present invention has a functional group that scavenges the transition metal, such as -CN, -COOH, -NCO, -SH, or -NH, which can control the transition metal species to improve the movement of the semiconductor device during the bonding process. Sex. The (meth)acrylic resin may have a (fluorenyl)acrylic resin whose glass transition temperature or molecular weight can be easily adjusted by a monomer polymerized therewith and a monofunctional group can be easily introduced to one side chain of the (meth)acrylic resin. Some of the advantages. In one embodiment, a (meth)acrylic resin prepared by copolymerization of a (fluorenyl)acrylic monomer and a comonomer can be used. Examples of the (meth)acrylic monomer include, without limitation, butyl (meth)acrylate, 2-ethylhexyl (methyl)propyl 8 201033320 enoate, (mercapto)acrylic acid, 2-hydroxyethyl ( Mercapto) acrylate, (decyl) decyl acrylate, glycidyl (meth) acrylate, isooctyl (meth) acrylate, stearyl (meth) acrylate, and the like. The (meth)acrylic resin may have an epoxy equivalent of about 10,000 g/eq or less. Examples of products having an epoxy equivalent of about 10,000 or less may include the SG-P3 series and the SG-800H series. The first adhesive layer of the present invention may contain from about 20 to about 40% by weight of a monomer containing a transition metal scavenger based on the amount of the binder. If the functional group of the φ transition metal is less than 20% by weight, the monomer exhibits low transition metal reactivity. If the amount of the functional group of the transition metal is removed exceeds the weight -% 'this monomer can reduce the solubility in the organic solvent, making the uniform coating of the film worse. Increasing the glass transition temperature (Tg), reducing the processability (such as this) The film is embrittled at room temperature, and reduces grain bonding, reducing reliability. The monomer containing the transition metal scavenger can be preferably used in an amount of from about 25 to about 35% by weight. The second adhesive layer of the present invention may contain from about 20 to about 40% by weight of a monomer containing a transition metal scavenger based on the amount of the binder. If the functional group of the φ-clearing transition metal is less than 20% by weight, the monomer can reduce the reactivity with the transition metal. If the functional group of the transition metal is removed more than 4% by weight, the monomer can be reduced in solubility in the organic solvent, and the uniform coating of the film is deteriorated to reduce the glass transition temperature (Tg) and reduce the processability (such as the film). Embrittle at room temperature), and reduce grain bonding, reducing reliability. Preferably, the monomer containing the transition metal scavenger can be used in an amount of from about 25 to about 35 percent by weight. The (meth)acrylic resin may have an oxime. (: to a glass transition of about 30 ° C 9 201033320 temperature. This glass transition temperature < avoiding the film embrittlement at room temperature ' and can make the burrs or chips of the cutting method not occur during the semiconductor combination. The '(meth) inner dilute acid resin may have a weight average molecular weight of from about 100,000 to about 700,000 g/mole. The amount of the binder is from about 30 to about 75 wt% of the first layer. The film is easily formed and has excellent reliability. More preferably, the amount of the binder may be from about 31 to about 7 Q% by weight. In one embodiment, the amount of the binder is in the first-adhesive layer, about 35 to about 65 wt%. In another embodiment, combined

The amount of the agent is from about 5 G to about 65% by weight of the first adhesive layer. In another embodiment, the amount of binder is from about 32 to about 55 weight percent of the first adhesion. Further, the amount of the σ ϋ agent is from about 1 〇 to about 3% by weight of the second adhesive layer. Within this range, the film is easy (four) and has excellent reliability. More preferably, the amount of binder may range from about 15 to about 25 weight percent. In embodiments, the amount of binder may range from about 13 to about 1% by weight of the second adhesive layer. In an embodiment, the amount of the binder of the first adhesive layer may be 51% by weight in the total amount of the binder, and the amount of the binder of the second adhesive layer may be

10 to 49% by weight. Yu Yige set, in this range, the operating efficiency of the wafer is maximized. <Curable component> One embodiment The curable component may be an epoxy resin, an E-resin or a mixture thereof. (1) Epoxy Resin The epoxy resin may contain an epoxy resin having a density which imparts a strong curing and adhesion effect. However, if it is 〇〇 疋, the epoxy tree in the same time; the early-epoxy curing system will cause a brittle film. Therefore, Ring Magic 10 201033320 can contain a liquid epoxy resin or a composition having a low crosslinked dense weeping single epoxy resin. The epoxy resin may have an equivalent weight of from about just up to about, preferably from about (10) to about 800 g/eq' and more preferably from about 15 Torr to about 4 〇〇g/eq. The cured product in this range exhibits better adhesion, maintains glass transition temperature, and has excellent heat resistance. The epoxy resin is not limited to a specific type as long as it exhibits curing and adhesion.

A quality, but may include an epoxy resin having a shape of a film which is solid or solid-like having at least one functional group. Examples of the epoxy resin may include a bisphenol type epoxy resin, an o-cresol novolak type epoxy resin s, a polyfunctional epoxy resin, an amine type epoxy resin, a heterocyclic epoxy resin, a substituted epoxy resin. , and naphthol type epoxy resin. Examples of commercially available double-prospective ring-shaped latex resins may include: Epiclon 830-S, Epiclon EXA-830CRP 'Epiclon EXA 850-S 'Epiclon EXA-835LV, etc. (Dainippon Ink and Chemicals, Inc.); Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, and Epicoat 1009 (Yuka Shell Epoxy Co., Ltd.); DER-330, DER-301 'and DER-361 ( Dow Chemical Co.); and YD-128 or YDF-170 (Kukdo Chemical Co., Ltd.). Examples of commercially available o-anthracene acid varnish type epoxy resins may include: YDCN-500-1P, YDCN-500-4P, YDCN-500-5P, YDCN-500-7P, YDCN-500-80P , and YDCN-500-90P (Kukdo Chemical Co., Ltd.); and EOCN-102S, EOCN-103S, EOCN-104S, 11 201033320 EOCN-1012, EOCN-1025, and EOCN-1027 (Nippon Kayaku

Co., Ltd.). Examples of commercially available polyfunctional epoxy resins may include: Epon 1031S (Yuka Shell Epoxy Co., Ltd.); Araldite 0163 (Ciba Specialty Chemicals); and Detachol EX-611, Detachol EX-614 ' Detachol EX -614B ' Detachol EX-622 ' Detachol EX-512, Detachol Ex-521, Detachol Ex-421, Detachol EX-411, and Detachol EX-321 (NAGA Celsius Temperature Co_,

Ltd.). Examples of commercially available amine type epoxy resins may include: Epicoat 604 (Yuka Shell Epoxy Co., Ltd.); YH-434 (Tohto Kasei Co., ®

Ltd.) ; TETRAD-X and TETRAD-C (Mitsubishi Gas Chemical

Company Inc.); and ELM-120 (Sumitomo Chemical Industry Co., Ltd.). An example of a commercially available heterocyclic epoxy resin may include PT-810 (Ciba Specialty Chemicals). Examples of commercially available substituted epoxy resins may include: ERL-4234, ERL-4299, ERL-4221, ERL-4206, etc. (UCC Co" Ltd.) commercially available naphthol type epoxy resin Examples may include: Epiclon HP-4032, Epiclon HP-4032D, Epiclon HP-4700, and Epiclon HP-470 l (Dainippon Ink and Chemicals,

Inc.). These epoxy resins may be used singly or in combination of two or more thereof. In one embodiment, the epoxy resin may contain at least about 5% by weight of a functional epoxy resin. If the content of the polyfunctional epoxy resin is about 50% by weight or more, the epoxy resin may have a high crosslinking density to promote the internal bonding strength of the structure and obtain better reliability. The amount of epoxy resin may range from about 4 to about 50% by weight, and preferably from about 4 to 12 201033320 to about 35% by weight, based on the total adhesion of the film and the right Μ 4 *. Within this range, =1, there is better reliability and compatibility is also maintained. It is better to reduce the surface viscosity of the film at a temperature (4) to reduce the stickiness of the film and the material to promote picking up by the picking method, or % or less. The amount of Μ娜^ is about 35 wt%. The amount of yew may be from about 15 to about 5% by weight of the first-adhesive layer, and preferably about 20 to (four)% by weight of the embodiment,

The first adhesive layer can be from about 17 to about 55% by weight. The amount of the epoxy resin may be from about 2 Torr to about 6% by weight, and preferably from about 25 to about 5 % by weight, based on the amount of the epoxy resin. In the embodiment, the amount of the epoxy resin, the second adhesive layer may be from about 27 to about 4% by weight. In another embodiment, the amount of epoxy resin can range from about 29 to about 35 weight percent of the second adhesive layer. (ii) Phenolic curable resin The phenol curable resin of the present invention may contain a known compound, but is preferably a compound having at least a diphenolic hydroxyl group in one molecule. For example, bisphenol A, F, and S-type anti-curable resins, virgin varnish resins, bisphenol novolak resins, cresol novolac resins, xylene resins, biphenyl resins, and the like can be used. Such a resin which exhibits excellent electrolytic corrosion resistance when absorbing moisture can be preferably used. Examples of commercially available phenol curable resins may include: simple phenol curable resins such as 'H-1, H-4, HF-1M, HF-3M 'HF-4M, and HF-45 (Meiwa Kasei Co_) , Ltd.); p-xylene type resins, such as MEH-78004S, MEF-7800SS, MEH-7800S, MEH-7800M, MEH-7800H, MEH-7800HH, and MEH-78003H (Meiwa Kasei 13 201033320

Co., Ltd.) and KPH-F3065 (KOLON Chemical Co., Ltd.); biphenyl type resins such as MEH-7851SS, MEH-7851S, MEH-7851M, MEH-7851H, MEH-78513H, and MEH- 78514H (MeiwaKasei Co" Ltd.) and KPH-F4500 (KOLON Chemical Co., Ltd.); and triphenylmethyl type resins such as MEH-7500, MEH-75003S, MEH-7500SS, MEH-7500S, and MEH-7500H (Meiwa Kasei Co.,

Ltd.). These components may be used singly or in combination of two or more thereof. The phenol curable resin may have a hydroxyl equivalent weight of from about 1 Torr to about 6 〇〇 g/eq' and preferably from about no to about 3 〇〇g/eg, according to an embodiment. Within this range, proper hygroscopicity and fluidity can be maintained, and the glass transition temperature is not reduced, thereby providing better heat resistance. * The phenol curable resin may contain about 50% by weight or more of novolak-fat. If the novolac resin is added in an amount of about 50% by weight or more, the crosslinking density increases after curing, so that the cohesive force between the molecules and the internal bonding strength are increased, whereby the adhesion of the adhesive layer is improved. Furthermore, the adhesive layer exhibits low deformability against external stress, which is advantageous in maintaining a fixed thickness of the film. The amount of the phenolic curable resin may be from about 15 to about 15% by weight and preferably from about 5 to 10% by weight, based on the first adhesive layer. In one embodiment, the amount of curable resin may be from about 2 to about 7% by weight of the first adhesive layer. In another embodiment, the amount of phenol curable resin can range from about 6 to about 13 weight percent of the first adhesive layer. The amount of the phenol curable resin may be from about 1 Torr to about 4 Å by weight and preferably from about 15 to about 30% by weight based on the second adhesive layer. In one embodiment, the amount of the curable tree may be from about 17 to about 25 weight percent of the second adhesive layer. In another embodiment 14 201033320, the amount of phenol curable resin can range from about 13 to about 20 weight percent of the second adhesive layer. <Curing catalyst> A curing catalyst can be added to adjust the curing rate. Examples of the curing catalyst may include a phosphine-based, boron-based, and imidazole-based catalyst, and the like. Examples of the phosphine-based curing catalyst may include, without limitation, triphenylphosphine, tri-o-tolylphosphine, tri-m-tolylphosphine, tri-p-tolylphosphine, tri-2,4-di. Tolylphosphine, tris-2,5-dimethylphenylphosphine, tris-3,5-diphenylphosphine, tritylphosphine, tris(p-methoxyphenyl)phosphine, tris(p- Third butoxyphenylphosphine, diphenylcyclohexylphosphine, tricyclohexylphosphine, tricyclophosphine, tributylphosphine, tri-tert-butylphosphine, tri-n-octylphosphine, diphenylphosphine styrene , diphenylphosphine chloride, tri-n-octylphosphine oxide, diphenylphosphinofluorene, tetrabutylphosphine oxide, tetrabutylphosphine acetate, benzyltriphenylphosphine hexafluoroantimonate, four Phenylphosphine tetraphenylborate, tetraphenylphosphine tetra-p-tolyl borate, benzyltriphenylphosphine tetraphenylborate, tetraphenylphosphine tetrafluoroborate, p-tolyltriphenyl Tetraphosphonium tetra-p-tolyl borate, triphenylphosphine triphenyl borate, 1,2-bis(diphenylphosphino)ethane, 1,3-bis(diphenylphosphino)propane, 1,4-bis(diphenylphosphino)butane, 1,5-bis(diphenylphosphino)pentane, and the like. These components may be used singly or in combination of two or more thereof. Examples of the boron-based curing catalyst may include, without limitation, phenylboronic acid, 4-nonylphenylboronic acid, 4-decyloxyphenylboronic acid, 4-trifluoromethoxyphenylboronic acid, 4-third Butoxyphenylboronic acid, 3-fluoro-4-methoxyphenylboronic acid, pyridine-triphenylborane, 2-ethyl-4-mercaptoimidazole tetraphenylborate, 1,8- 15 201033320 The composition of the nitrogen heterocycle [5·4·〇] eleven or early, or two or more of them, uses carbene-7-tetraphenylborate or the like. The amount of the curing catalyst may be from about G.G1 to about 2 and preferably from about 1 to about 5% by weight of the first adhesive layer. Further, the amount of the curing catalyst may be from about 0. 01 to about 10% by weight of the adhesive layer, and preferably from about 0.5 to about c °. The composition exhibits excellent storage stability.

The decane coupling agent may be added to the composition such that the adhesive layer promotes the adhesion between the surface of the inorganic grade damage such as the stone and the resin in the adhesive film. Examples of the sand coupling agent may include a decane containing an epoxy group or a cerium containing a thiol group. Examples of the epoxy-containing decane coupling agent may include, without limitation, 2-(34-epoxycyclohexyl)-ethyltrimethoxydecane, 3-epoxypropoxytrimethoxysulfonium*', and 3-epoxy two. Examples of oxypropyltriethoxydecane, and containing an amine group, include N-2 (aminoethyl)-3-aminopropylmethyldimethoxycalcin, N-2 (aminoethyl)_3_aminopropyltrimethoxydecane, n_2(aminoethyl)-3-aminopropyltriethoxydecane, 3-aminopropyltrimethoxy oxime

Dry, 3-aminopropyltriethoxydecane, 3-triethoxydecyl-N-(l,3-dimethylbutylidene)propylamine, N-styl-3-aminopropyl Trimethoxy decane and the like. These components may be used singly or in combination of two or more thereof. Examples of the sulphur-containing smelting furnace include, without limitation, 3-benzyl propyl decyl dimethoxy decane, 3-mercaptopropyl triethoxy decane, and the like. Examples of the isocyanate-containing decane may include 3-isocyanatepropyltriethoxydecane or the like. These components may be used singly or in combination of two or more. The decane coupling agent may be included in the first or second adhesive layer in an amount of from about 0.01 to about 10 parts by weight of 16 201033320%. Preferably, the wetting agent can be used in an amount of about 1 to 7% by weight in the first adhesive layer and the Wei coupling agent can be used in an amount by which the second adhesive layer can be cut by weight. <Filler> The filler may be selectively added to provide thixotropic f and to control the smelting viscosity.

The filler may contain an inorganic or organic filler as needed. Examples of the inorganic filler include, without limitation, a metal component of a powder type such as gold, silver, copper, and nickel, and a non-metal component such as alumina, hydroxide, oxyhydroxide, carbon, carbon, (4) Words, ♦ acid town, oxidized gold mother, magnesia, oxygen fairy, nitrite, crushed stone, nitrided butterfly, titanium dioxide, glass, ferrous salt, ceramics, etc. These components may be used singly or in combination of two or more. Examples of the organic filler may include, without limitation, carbon, a rubber filler, a polymer-based filler, and the like. These components may be used singly or in combination of two or more. The filler may have a particle size of from about 10 nm to about 10 μΓη, and preferably from about 100 run to about 7 μηη. Within this range, the filler does not collide with the semiconductor circuit and does not damage the circuit. The filler may have a spherical shape, a plate shape, or the like, but is not limited thereto. In one embodiment, globular vermiculite is preferred as a filler. Further, the filler may have a spherical surface having a hydrophobic property as needed. The globular vermiculite may have a particle size of from about 500 nm to about 5 μm. 17 201033320 The filler may be included in the first or second adhesive layer in an amount of from about 0.01 to about 50% by weight. Within this range, the film can be easily formed and has better tensile properties. In the case where the adhesive film according to an embodiment can be used as a die attach film, the amount of the filler may range from about 7 to about 40% by weight. In one embodiment, the amount of filler may range from about 5 to about 30 weight percent, and preferably from about 7 to about 20 weight percent, of the first adhesive layer. In one embodiment, the amount of filler may range from about 20 to about 50% by weight, and preferably from about 30 to about 40% by weight, of the second adhesive layer.

The adhesive layer according to the present invention has been explained above, and the functional group for removing the transition metal is described by being only introduced to the binder, but it may be contained in any component which may contain a functional group, such as a ring. Oxygen or decane coupling agent. <Organic Solvent> The first or second adhesive layer of the present invention may further comprise an organic solvent.

The organic solvent lowers the viscosity of the adhesive composition, thereby promoting the manufacture of the adhesive film. However, the physical properties of the adhesive film are affected when the organic solvent remains on the adhesive film. Therefore, the amount of the remaining organic solvent is preferably controlled within about 2%. Applicable examples of the organic solvent include, without limitation, benzene, acetone, methyl ethyl ketone, tetrahydrofuran, decyl decylamine, cyclohexane, propylene glycol monodecyl ether acetate, cyclohexanone and the like. These solvents may be used singly or in combination of two or more thereof. The organic solvent induces the formation of a homogeneous mixture to reduce pore formation upon formation of the adhesive film. Further, after the adhesive film is formed, a small amount of the organic solvent remains in the film to soften the film. 18 201033320 The organic solvent can have from about 140 to about 200 by a solvent having a low boiling point of from about 40 to about 125 °C. <: The high boiling point solvent is mixed and prepared. If only - has a ratio of about 12 5 . A solvent having a lower boiling temperature of C is used. 'The volatile pores are formed by the solvent left by the curing method. If only one solvent having a boiling point of more than about 200 ° C is used, the amount of remaining solvent is used. The film formation becomes 2% or more, resulting in volume expansion and reduced reliability in EMC molding methods or reliability tests. The solvent having a low Buddha point may have a ratio of a solvent having a high boiling point of 1:0.7 to 4. In this ratio, the volume expansion of the gap or pore formed at one interface is reduced to minimize the formation of voids when bonding the wafer and the interface. The volume expansion caused by the gap or pores during the filling process It can be lowered 'by this' to provide a highly reliable adhesive film for semiconductor devices. Furthermore, the film embrittlement prior to curing can be reduced to avoid contamination of the film due to fragmentation of the cutting or mounting method, and to facilitate the handling of the crucible. The adhesive film for a semiconductor device according to the present invention can be produced by a conventional method. In one embodiment, the first adhesive layer can be applied to a base film to form a first adhesive layer, and thereafter, a second adhesive layer is applied thereon to prepare a multilayer adhesive film. Then, the multi-layered adhesive film is dried, and the amount of the remaining solvent is adjusted to less than about 2% by weight, and @化ed to obtain the final multi-layered adhesive film. In another embodiment, the first adhesive layer and the second adhesive layer are individually coated on the individual films and bonded to form an adhesive film. For example, the drying method is carried out at a temperature of from about 8 Torr to about 12 cc for about 1 Torr to about 60 minutes. By controlling the drying temperature and time remaining in the composition 19 201033320 The solvent having a low boiling point is removed, and the amount of the solvent having a high boiling point is adjusted to less than 2%. The curing process is carried out at a temperature of from about 120 to about 150 Torr to about 1 hour. In another embodiment, it is comprised between about 120 and about 130. (: the first curing method lasting for about 3 hours and the curing method of the second ID method after about 130 to about 15 〇〇C for about 1 〇 to about 6 〇 minutes can be repeated - times to About eight times. By this method, the degree of volatile foaming formed by the remaining solvent can be adjusted in the curing method. In the curing method, only the solvent having the high point of the film is left in the film.

Minimize to minimize the possible voids in the grain attachment due to volatile components and to slow the volume expansion of the bubbles. In the multilayer adhesive film according to the present invention, the amount of the remaining solvent is less than about 5% by weight. Therefore, the layer content of the film formed by the dissection is more than about 98 by weight. If the content of (4) in this layer is less than 9% by weight, the adhesive film may be low in reliability due to bubbles or moisture remaining in the solvent. While in the illustrated embodiment, the multilayer adhesive film can have an elongation of from about 15% to about the same. %

In the illustrated embodiment, the multilayer adhesive film may have a storage elastic modulus of at least about 10 MPa, and a storage elastic modulus of (10) from 0.1 to mPa at 8 〇〇c.约〇.1 (In the illustrated embodiment, the multilayer adhesive film may have a refining axis of from 25 匚1,000,000 to about 5, _, _ p and less than about 〇^% is a viscous viscosity value. This shows The composition does not change by the viscosity of the film in the film = surface viscosity or surface viscosity. Therefore, the nature of the semiconductor combination is not affected in a large amount. That is, regardless of the presence of a solvent having a high boiling point, curing The storage elastic modulus, fluidity and surface viscosity of the former adhesive composition are maintained. Therefore, the adhesive film is not affected by the high-point solvent in the storage of the general temperature. Compared with the solvent-formed film, the adhesive film of the present invention has a low volatilization speed and a small amount of volatilization from about 125 to 175. The film is prevented from being broken. Further, the formation of pores can be suppressed. In order to minimize the generation of voids on the substrate to less than about 5% by the semiconductor combination method, the reliability is reduced. According to another aspect of the present invention, a die-bonding combination having the multilayer adhesive enthalpy is provided. Membrane. Figure 2 is a A schematic cross-sectional view of a dicing die bonding film having a multi-layered adhesive film according to an embodiment of the present invention. In FIG. 2, the dicing die bonding film of the present invention has an adhesive layer 20 therebetween, a first adhesive layer 150, and A second adhesive layer 140 is sequentially stacked on a base film 10. The base film 10 can be a radiolucent material. If a radioactive curable adhesive reactive with ultraviolet light is used, the base film 10 is used. A material having a light transmittance may be included. Such materials may include, for example, polyolefin homopolymers or copolymers such as polyethylene, polypropylene, propylene ethylene copolymer, ethyl ethyl ethoxide copolymer , ethylene acetonate vinegar copolymer, ethylene vinyl acetate copolymer, polycarbonate, polymethyl methacrylate, polyethylene glycol, polyurethane copolymer, etc. Consider tensile strength, elongation The base film may have a thickness of from about 50 to about 200 μm. For the adhesive layer 20, any conventional adhesive composition may be used. Example 21 201033320 For example, the adhesive composition may comprise about 100 parts by weight. The binder and about 20 to about 150 parts by weight of the UV-curable acrylate. In another embodiment, the adhesive composition may further comprise from about 0.1 to about 5 for 100 parts by weight of the UV-curable acrylate. By weight of the photoinitiator, a plurality of adhesive films having a first adhesive layer 150 for removing transition metal ions and a second adhesive layer 140 having fluidity can be formed on the adhesive layer 20. If the die-bonding film is not cut There is an adhesive layer which can be used as an adhesive film for bonding a semiconductor wafer, as shown in Fig. 3. Fig. 3 is a cross-sectional view showing an example of a semiconductor device having a multilayer adhesive film according to an embodiment of the present invention. The first semiconductor wafer 120 having a substrate adhesive layer 110 is bonded to a printed circuit board (PCB) 100. Then, a combination of wires 130 is implemented, and a second semiconductor wafer 160 having a first adhesive layer 150 and a second adhesive layer 140 is disposed on the first semiconductor wafer 120. The second semiconductor wafer 160 is bonded to the first adhesive layer 150 by lamination, and the base film is passed through the multilayer adhesive film having the base film, the first adhesive layer 150 and the second adhesive layer 140 stacked therein. The pickup method is removed therefrom, and thereafter, the second adhesive layer 140 is bonded to the first semiconductor wafer 120, whereby a semiconductor device is fabricated. In the foregoing structure, the first adhesive layer 150 according to the present invention can change the state of the transition metal of the second semiconductor wafer 160 contaminated by the transition metal, thereby reducing the mobility thereof by chemical reduction or a combination reaction with the transition metal, thereby Maximize the operational efficiency of the wafer. The first adhesive layer 150 may have a large number of functional groups β Μ of 201033320 for reducing the transition metal. In this case, the first adhesive layer 15 〇 may have a strong ability to reduce transition metals, but may be carried out due to an increase in polymer content. Reduced liquidity. Therefore, fluidity can be obtained by forming an adhesive film of the second adhesive layer 14'' which has a relatively small amount of a functional group capable of reducing a transition metal. Therefore, the adhesive film having the multi-layer structure with the largest amount of money can exhibit two advantages. The second adhesive layer U0 can increase fluidity to minimize attachment porosity. If the face stacks of the same size are stacked, the second adhesive layer can minimize the formation of the voids by maximizing the fill, thereby achieving high reliability. Here, the thickness of the first adhesive layer 150 may be about 8 to about 25% of the total thickness of the adhesive film and the thickness of the second adhesive layer (10) may be about γ to about 5%. The multilayer adhesive film for a semiconductor device according to the present invention maximizes the operational efficiency of the semiconductor device during or after the semiconductor method, and solves the transition metal by the transition metal impurity or the infiltration-adhesion interface remaining on the semiconductor wafer. The problem of reduced reliability of semiconductor wafers caused by ions Furthermore, the multilayer adhesive film of the present invention has better tensile strength and improved adhesion, surface energy and moisture absorption, thereby exhibiting high reliability. In addition, the multi-layered adhesive film of the present invention promotes the filling of the bonding method and minimizes the occurrence of voids regardless of the degree of wafer pickup of the semiconductor combination, resulting in high reliability. Examples of the first and second adhesive layers will now be described in detail. The following examples are described to illustrate the advantages and features of the present invention and its implementation. However, it should be noted that the present invention may be embodied in different forms and should not be construed as limiting the examples shown herein. Rather, the examples are provided to provide a thorough understanding of the invention, and the scope of the invention is defined by the scope of the appended claims. EXAMPLES The following examples and comparative examples were used as follows: (a) 15% by weight of the binder SG-P3 series (transition metal scavenger) dissolved in a solvent of ethyl acetate and toluene in a ratio of 5:5. : 25% CN group, Nagase ChemteX Corporation) was used. (b) Curable component (b1) 80% by weight of a polyfunctional epoxy resin (EP-5100R, Kukdo Chemical Co., Ltd.) dissolved in MEK was used. (b2) 60% by weight of a novolac-curable resin (DL-92, Meiwa Plastic Industries, Ltd.) dissolved in MEK was used as 0 (b3) 60% by weight of an amine-based curing resin dissolved in MEK (C) -200S, Nippon Kayaku Co., Ltd.) was used. (c) Curing catalyst 50% by weight of a phosphine-based curing catalyst dissolved in cyclohexanone 乂TPP-K, Meiwa Plastic Industries, Ltd.) was used. (d) Coupling agent A decane coupling agent (KBM-303, Shin-Etsu Chemical Co., Ltd.) was used. (e) Filler (el) Amorphous Shishi Stone (A200, Degussa) was used. 201033320 (e2) Spherical vermiculite (SC-4500SQ, SC-2500SQ, Admatechs Co., Ltd.) was used. (f) Additive An amino decane coupling agent (KBM-803, Shin-Etsu Chemical Co., Ltd.) was used. EXAMPLES 1-3 The components listed in Table 1 were added to a 1 liter cylindrical flask of a high-speed impeller, and dispersed at a low speed of 3000 rpm for 20 minutes, and then continued at a high speed of 4 rpm. Each composition was prepared for 5 minutes. Each of the compositions was filtered using a 50 μηι capsule filter and applied to the base film by a coater to a thickness of 60 μm to produce an adhesive film. This film is at 8 inches. (: drying for 2 minutes, then drying at 90 ° C for another 20 minutes, and then curing at room temperature for 1 day. Example 4 Example 4 was obtained in the same manner as in Example 2, but the combination of the second adhesive layer The amount of the agent and the curable component was changed. Example 5 Example 5 was obtained by the same method as in Example 2, but an amine-based curing resin was used for the curable component of the first adhesive layer to replace the phenolic resin. Varnish cured resin. Example 6 Example 6 was obtained by the same method as in Example 2, but the amount of the binder, the curable component and the catalyst of the first adhesive layer was changed. 25 201033320 Table 1 (g) Implementation Example 1 2 3 4 5 6 First Adhesive Layer Bonding Solution SG-P3 384 (57.6) 384 (57.6) 384 (57.6) 384 (57.6) 384 (57.6) 275 (41.25) Curing Solution (bll) 32 (25.6) 32 (25.6) 32 (25.6) 32 (25.6) 32 (25.6) 70 (56) (bl2) - - - - - - (b2) 11 (6.6) 11 (6.6) 11 (6.6) 11 (6.6) - 19 (11.4) (b3) - - - - 11 (6.6) - Curing catalyst solution 0.6 (0.3) 0.6 (03) 0.6 (0.3) 0.6 (0.3) 0.6 (0.3) 0.5 (0.25) Coupler 3 3 3 3 3 3 Filler (el) 10 10 10 10 10 10 (e2) - - - - - - Additive - - - - - - Total 103.1 103.1 103.1 103.1 103.1 12L9 - Degree % 8 15 25 15 15 15 Second adhesive layer binder solution SG-P3 220 (33 ) 220 (33) 220 (33) 210 (31.5) 220 (33) 220 (33) Curing solution (bll) 80 (64) 80 (64) 80 (64) 75 (60) 80 (64) 80 (64) (bl2) - - - - - - (b2) 60 (36) 60 (36) 60 (36) 65 (39) 60 (36) 60 (36) Curing Catalyst Solution 3.8 (1.9) 3.8 (1.9) 3.8 (1.9 4.0 (2.0) 3.8 (1.9) 3.8 (1.9) Coupling agent 2.2 2.2 2.2 2.2 2.2 2.2 Filler (el) - - - - - - (e2) 70 70 70 70 70 70 Additive KBM-573 1 1 1 1 1 1 Total 208.1 208.1 208.1 205.7 208.1 208.1 Thickness % 92 85 75 85 85 85 (): Solid content

Comparative Example 1 Comparative Example 1 was obtained by the same method as in Example 1 except that a single-layer adhesive layer having the first adhesive layer but no second adhesive layer was formed. Comparative Example 2 Comparative Example 2 was obtained by the same method as in Example 1 except that a single-layer adhesive layer having a second adhesive layer but not having the first adhesive layer was formed. 26 201033320 Comparative Example 3 Comparative Example 3 was obtained by the same method as in Example 1, except that the first adhesive layer had a thickness ratio of 35% and the second adhesive layer had a thickness ratio of 65%. Comparative Example 4 Comparative Example 4 was obtained by the same method as in Example 1, except that the first adhesive layer had a thickness ratio of 50% and the second adhesive layer had a thickness ratio of 50%. Comparative Example 5 Comparative Example 5 was obtained by the same method as in Example 2, but the amount of the binder of the first adhesive layer was reduced. Comparative Example 6 r Comparative Example 6 was obtained by the same method as in Example 5, except that an amine-based resin was used for the curable component of the first adhesive layer to replace the novolac-curable resin. 27 201033320 2nd table unit (g) Comparative Example 1 2 3 4 5 6 First adhesive layer binder solution SG-P3 384 (57.6) - 384 (57.6) 384 (57.6) 210 (31.5) 210 (31.5) Curing solution (bll) 32 (25.6) - 32 (25.6) 32 (25.6) 90 (72) 90 (72) (bl2) - - - - - - (b2) 11 (6.6) - 11 (6.6) 11 (6.6) 20 (12) - (b3) - - - - - 20 (12) Curing catalyst solution 0.6 (0.3) - 0.6 (0.3) 0.6 (0.3) 0.6 (0.3) 0.6 (0.3) Coupler 3 - 3 3 3 3 Filler ( El) 10 - 10 10 10 10 (e2) - - - - - - Additive - - - - - - Total 103.1 - 103.1 103.1 128.8 128.8 Thick 1% 100 - 35 50 15 15 Flute-adhesive bond solution SG -P3 - 220 220 220 220 220 Curing solution (bll) - 80 80 80 80 80 (M2) - - - - - - (b2) - 60 60 60 60 60 Curing reminder 4 Tanning agent solution - 3.8 3.8 3.8 3.8 3.8 Even Mixture - 2.2 2.2 2.2 2.2 2.2 Filler (el) - - - - - - (e2) - 70 70 70 70 70 Additive KBM-573 - 1 1 1 1 1 Total - 208.1 208.1 208.1 208.1 208.1 Thickness % - 100 65 50 85 85 (): Solid content The properties of the film prepared as above were evaluated by the following methods. 1. Thickness: Each film was cut into a 20 x 80 mm sample and the thickness was measured three times with a zero return to obtain an average value. 2. Melt viscosity: Each film was formed into a four-layer laminate at 60 ° C and cut into a 25 mm-diameter circular sample. The melt viscosity of the sample was measured using a parallel dish rheometer. The sample has a thickness of 400 to 440 μηη. The melt viscosity was measured at a rate of 5 ° C/min from 30 to 130 ° C. The melt viscosity was measured at 25 ° C before curing at 100 ° C (as the grain attachment temperature, flow 201033320), and at 130 ° C (the filling of the uneven portion around the line was determined). 3. Attachment Pore: A substrate bonded to a 25 um-diameter gold wire is prepared on a bonded die. The adhesive film was attached to a back-grinding wafer at a thickness of 80 μm and cut into articles of the same size (about 10 x 10 mm) as the substrate of the substrate. The dies are picked up using a die bonder and pulled in contact with the resulting die to overlap each other'. Thereafter, the grain size between the die and the film is observed using a scanning sonic topology (SAT), and the measurement is related to The pore size of the total grain area, %. 4. Line Offset: The sample used to measure the attached pores is observed by an electron microscope to determine the deformation or offset of the bond line of the lower crystal. The line was not covered with an adhesive film or the extrusion was determined to be defective.

5. Performance of the device: The semiconductor wafer is assembled using the adhesive film and subjected to the test procedure. The device is mounted on the pCD via a solder ball attachment system and checks if the test program for the device is properly operated and the pass/fail is determined. The series of property results are shown in Tables 3 and 4. Table 3: Example 1 2 3 4 5 6 First adhesive layer binder content % 55.9 55.9 55.9 55.9 55.9 33.8 Bright melt viscosity 3.5*E3 3.5*E3 3.5*E3 3.5*E3 3.5*E3 5.2*E3 Second Adhesive layer binder content% 15.9 15.9 15.9 15.4 15.9 15.9 Melt viscosity 9.3 9.3 93 5.0 9.3 9.3 Multilayer structure attachment porosity less than 5% less than 5% less than 5% less than 5% less than 5% less than 5% line The offset is passed through by passing through the performance of the device by passing through by passing through 29 201033320 4th table 1 2 3^ first binder content % 55.9 - 55.9 marrying viscosity 3.5*Ε3 3.5*pr second adhesive layer binder Content % - 15.9 15.9 Melt-stick viscosity - 9.3 9Γ 彡> § Attachment porosity 30% less than 5% 7% - Line offset failure through device performance through failure S' 5 6 55.9 24.4 24.4 ^5*E3 r 2.8*E3 2.8*Ε3 15.9 —— 15.9 15.9 9.3 9.3 93 Less than 5% Less than 5% Passing failure failure *=β ^ <Lee film to adjust the thickness of the adhesive layer to restore the transition metal The edge is the largest and also maintains the fluidity of the multilayer film. When the thickness of the first adhesive layer β i is increased, the ability of the adhesive film to reduce the metal is also increased. However, if the thickness of the first increase is 30% or more of the total thickness of the adhesive layer, the reliability is deteriorated by the voids which are filled by the defects of the three countries in the periphery or by the line of the adhesive-killing and plasticizing. These results were also compared by »4 market class.

The extrusions 1, 3 and 4 confirm that if the first adhesive layer has the same thickness as the second adhesive layer, as in Comparative Example 4, the interface delamination (step filling) may occur due to the difference in the number of the second (four). . Conversely, the wire has a second adhesive layer. In Comparative Example 2, the transition metal of the first adhesive layer has a lack of transition metal, and therefore, the ability to maximize wafer operation efficiency is low. = Example 4: Although the amount of the polymer of the transition metal can be reduced _ to increase the fluidity of the first adhesive layer, but is a reducing property, the adhesive film can still be overfilled in the first layer of the first layer. Because it can restore the maximum efficiency. The performance of the adhesive film allows the wafer to operate at an efficiency of ^. ―The persuasion layer is solid. On the other hand, if there is a clear transitional gold contained in an adhesive layer

The polymer of the functional group of 3〇 201033320 is reduced, and the performance of reducing the transition metal is lowered, which causes troubles in maximizing the operational efficiency of the wafer. This demonstrates that the amount of polymer is also an important factor as confirmed in the Examples and Comparative Examples 5 and 6. While the invention has been described by way of example, the embodiments of the invention may be Under the scope. The scope of the invention is intended to be limited only by the accompanying embodiments. I: Schematic description 3

1 is a schematic cross-sectional view of a multilayer adhesive film according to an embodiment of the present invention; and FIG. 2 is a schematic cross-sectional view of a cut grain bonding film having a multilayer adhesive film according to an embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of a semiconductor device having a multilayer adhesive film in accordance with an embodiment of the present invention. [Main component symbol description]

10.. Base film 20: adhesive layer 100... printed circuit board 110.. substrate adhesive layer 120... first semiconductor wafer 130... line 140.. second adhesive layer 150.. first adhesive layer 160 .. . Second semiconductor wafer 31

Claims (1)

201033320 VII. Patent application scope: 1. A multilayer adhesive film for a semiconductor device, comprising: a first adhesive layer disposed adjacent to a base film; and a second adhesive layer adjacent to the first adhesive layer, Wherein, each of the first adhesive layer and the second adhesive layer has a clear transitional gold-like official H-binding agent with an oxidation or reduction transition metal or a mobility reducing the transition metal. The single system for scavenging the functional groups of the transition metal is present in an amount relative to the amount of bound Z of from about 20 to about 40% by weight, the first adhesive layer having a thickness of from about 2 to about 30% of the total thickness of the adhesive layers And the first adhesive layer has a larger bonding dose than the second adhesive layer. 2. If you apply for a patent scope! The multilayer adhesive film of the present invention, wherein the functional group for removing the transition metal comprises at least one selected from the group consisting of -CN, -COOH, _NCO, and -NH2. 3. The multi-layered adhesive film of claim 1, wherein the first adhesive layer has a bonding dose of about 30 to 75% by weight based on the total weight of the first adhesive layer. 4. The multi-layered adhesive film of claim 1, wherein the first adhesive layer comprises from about 30 to about 75% by weight of the binder, from about 15 to about 60% by weight of one epoxy resin, from about 1 to About 15% by weight of one of the phenol curable resins, and about 0.01 to about 2% by weight of one of the curing catalysts. The multilayer adhesive film of claim 1, wherein the second adhesive layer comprises from about 10 to about 3 % by weight of the binder, from about 20 to about 60% by weight of one of the cyclic resin, about 10 to About 40% by weight of one of the phenol curable tree 32 201033320 grease, and about 0.01 to about 20% by weight of one of the curing catalysts. 6. The multi-layered adhesive film of claim 1, wherein at least one of the first adhesive layer and the second adhesive layer further comprises an additive for removing the transition metal. 7. The multilayer adhesive film of claim 4, wherein the epoxy resin has an epoxy equivalent weight of from about 100 to about 1,500 g/eq. 8. The multilayer adhesive film of claim 4, wherein the epoxy resin comprises about 50% by weight or more of a polyfunctional epoxy. The multi-layered adhesive film of claim 4, wherein the phenol curable resin has a hydroxyl equivalent weight of from about 100 to about 600 g/eq. The multi-layered adhesive film of claim 4, wherein the phenol curable resin contains about 50% by weight or more of a phenol resin. A diced die-bonding film comprising a multi-layered adhesive film as in the first aspect of the patent application. Xin 33