201031695 六、發明說明： 【發明所屬之技術領域】 技術領域 本發明係有關於-種在料導體晶圓等的薄板狀工作 件研磨成平面時，以樹脂被覆功件的單面，並將樹脂侧 之面形成為研磨工作件時之基準面的方法。 【先前技術3 背景技術 成為半導體或電子零件的材料之半導體晶圓，係可舉 例有由矽等的單結晶材料所構成之物質，或由具有複數元 素之化合物所構成之物質等。該等晶圓係成形為圓柱狀之 鑄塊，再藉由鋼絲鋸等切片成基板狀，並進—步藉由施行 包覆、蝕刻等動作進行加工，以除去切片時所發生之起伏 及翹曲，使其既平且薄。 然而，為了進行上述蝕刻，則需要於晶圓周圍供給反 應氣體k使其滯留，並藉由施加高壓電於該反應氣體使其 離子化等大規模設備。又，作為可蝕刻用於晶圓之矽的氣 體，雖可舉例有SF6等氟化氣體，然而該種類之氣體係溫室 軋體，且為高價者。因此為了進行钱刻，就要使用大型設 備與高價氣體，而有需要高額費用等缺點。 於是，提出一種在晶圓的單面塗布樹脂或蠟等，使其 硬化而形成被覆物後，藉由研磨晶圓，而將晶圓之起伏及 翹曲除去的方法(參照專利文獻卜2)。在該等方法中，係藉 由使已塗布之樹脂硬化，表面形成平坦的被覆物，並以該 201031695 被覆物的表面作為基準面研磨晶圓，將晶圓的起伏及翹曲 除去，使晶圓被加工成平坦。 [專利文獻1]日本特開平8-66850號公報 [專利文獻2]日本特開2006-269761號公報 C發明内容】 發明揭示 發明欲解決之課題 然而，上述專利文獻1的方法中，依形成於晶圓單面之 被覆物的厚度，可能發生如下的問題。例如，塗布於晶圓 之被覆物的厚度較薄時，起伏及翹曲無法由被覆物充分吸 收。又’在塗布於晶圓之被覆物的厚度大的情況下，使用 一般研磨裝置’將轉動的研磨石按壓至晶圓進行晶圓研磨 時’會產生晶圓因被覆物的彈性作用而偏離研磨石、即使 可除去起伏及翹曲’也難以將晶圓研磨成均勻的厚度等問 題。 另一方面’藉由上述專利文獻2的方法，由於可將被覆 物控制在適當的膜厚，可有效除去起伏及翹曲。然而，由 於是在晶圓内殘留了内應力的狀態下使樹脂等硬化，晶圓 研磨後若將被覆物除去，有時殘留於晶圓内之内應力會造 成起伏及翹曲再度恢復等彈回（spring back)現象產生的情 形，而未必是令人滿意的東西。 因此本發明係以提供一種樹脂被覆方法及裝置為目 的’該方法係為了將包含起伏及翹曲等變形要素之上述晶 圓等薄板狀工作件研磨加工成平坦，以樹脂被覆於工作件 201031695 的單面並適切地除去工作件之起伏及翹曲，結果研磨後之 工作件可形成為平坦。 用以解決課題之手段 本發明之樹脂被覆方法係為了將包含起伏及翹曲等變 形要素之薄板狀工作件的一面進行研磨加工使其平坦而 將樹知被覆於該工作件另一面之樹脂被覆方法，其特徵在 於至少具備以下步驟：工作件押壓步驟係以押壓機構將 % 该工作件從上述一面之侧向該樹脂押壓者；工作件移動步 驟，係在將工作件保持於押壓機構的狀態下，依從另一面 向一面的方向，使該工作件至少移動到對應變形要素的位 置，押壓機構分離步驟，係使押壓機構自 工作件的一面分 離；與樹脂硬化步驟，係藉由外在刺激賦予機構，賦予硬 化性樹脂刺激而使該樹脂硬化。 本發明之樹脂被覆方法中，藉由在工作件移動步驟 中，使工作件至少移動到對應變形要素的位置，可使因押 _ 髮而平坦化之工作件在使樹脂流動的同時，藉由内部應力 回復到原本的形狀，或接近原本形狀的狀態。本發明中所 Μ「對應到變形要素的位置」，係指可使在押壓步驟變形 2工作件回到原本的形狀之位置。藉由實施該玉作件移動 果顿可在樹脂上使卫作件再現押壓前的變形狀態。其結 ’使樹脂硬化再研紅作件的__面之後，將樹脂從工作 除去時’工作件不易產生變形，可使研磨成平坦之 保持當下的平坦狀態。 本發明中，在上述工作件押壓步驟中包含了下述形 201031695 態.在工作件的-面緊貼而墙正了變形要素的狀態下將 該工作件保持於押壓機構，且將該工作件向上述硬化性樹 脂押壓。 就本發明之樹脂被覆方法中所使用的上述硬化性樹脂 而言’可舉例有藉紫外線照射而硬化之料線硬化樹脂； 而此時的上料在職料機構，係錢射紫外線之紫外 線照射機構。 就其它硬化性樹脂而言，可列舉如藉加熱而硬化之熱 硬化樹脂；或因加熱而液化’並藉由冷卻而硬化之教可塑 性樹脂。在熱硬化樹脂的情形下，外在刺激料機構為進 行加熱的加熱機構；而财塑性樹脂的情形下，外在刺激 賦予機構為進行冷卻之冷卻機構。 其次，本發明之樹脂被覆裝置，係可適宜地實施上述 本發明之樹脂被覆方法者；其特徵在⑨至少具備有：工作 件保持機構，係在另-面露出之狀態下裝卸自如地保持工 作件者；平台’係具有與該卫作件保持機構相對向配置之 工作件載置面，且有硬化性樹脂供給至社作件裁置面 者’押壓機構，係將保持於卫作件鱗機構之工作件 供給至平台的工作件載置面之硬化性樹脂押壓者； 移動機構，係使射述押壓機構向前述硬化輯脂押壓之 前述工作件，依由前述另-面向前述—面的方向移 與外在刺激賦予機構，係對供給至平台之工作件栽 硬化性樹脂賦予外在刺激者。 面之 再者本發明所稱之工作件並無特別限定，可舉例有由 201031695 石夕或坤化鎵所構成之半導體晶 化合物所構成之晶圓等。 發明效果 圓’或由青玉(氧化鋁）等無機 根據本發明，藉由使押壓至已塗布於平台之樹脂的工 乍件依攸平台離開的方向，至少移動到對應變形要素的 可使工作件再現原本的變形狀態，因此可發揮以下 效果：在研磨後即使將樹脂自工作件除去，也不會產生變 形’而能得到平坦的工作件。 圖式簡單說明 第1圖為本發明之一實施形態中，於單面被覆有樹脂之 晶圓的剖面圖。 第2圖為本發明之一實施形態之樹脂被覆裝置的立體 圖。 第3(a)圖〜第3((；)圖為顯示一實施形態之樹脂被覆步驟 的剖面圖。 第4(a)圖、第4(b)圖為顯示一實施形態之樹脂被覆步驟 (接續第3圖）的剖面圖。 第5(a)圖、第5(b)圖為顯示一實施形態之樹脂被覆步驟 (接續第4圖）的剖面圖。 第6圖為顯示研磨晶圓之一實施形態之研磨裝置(研磨 軸）的側視圖。 第7(a)圖〜第7(d)圖為顯示研磨步驟之剖面圖。 第8(a)圖〜第8(c)圖為顯示本發明之其他實施形態的樹 脂被覆步驟之立體圖。 201031695 【實施方式】 用以實施發明之最佳形態 以下，參照圖示說明本發明的—實施形態。 [1] 半導體晶圓 ~ 第1圖係表示—實施形態中之工作件，半導體晶圓（以下 稱晶圓）。該晶SU係將由石夕等所構成之圓柱狀材料鱗塊以 鋼絲鑛切片_定的厚度，而得_素材階段物件。晶圓i 疋因在切斷時所生之阻力而造成了起伏與翹曲的產生。該 晶圓1係在背面_布有紫外線硬化型樹脂且使莫硬化 後’研磨表面la，接著再研磨背面lb而被加卫成平坦後， 在被研磨的表面形成由具有電子回路之複數的裝置所構成 之圖形。 [2] 樹脂被覆裝置的結構 第2圖表不一實施形態之樹脂被覆裝置1〇，其係將樹脂 提供至晶m 1的背面ib且使其硬化者。在第2圖中，符號^ 為中空的基台，而該基台丨丨的上部配置有作為上表面平垣 且水平之工作件載置面12a的矩形板狀平台12。由於平台12 是由紫外線可穿透之硼矽酸玻璃或石英玻璃等所構成者， 平台12的下表面係面對基台I〗内之中空。 在基台11内的底部配置有向上方的平台12照射紫外線 (紫外光）之複數的UV燈13。又，在基台“設有矩形板狀之 光閘15，其可藉圓柱體14在uv燈13上方進退，且進入時將 UV燈13朝上方的紫外線照射光徑遮斷者。光閘15雖然在第 2圖中只表示了一個，但其係如第3圖所示為左右一對者， 201031695 且有圓枉體14連接於各光閘15。 圓枉體14具有往基台11方向水平伸縮之活塞桿14a，而 光閘15係以水平狀態被固定於活塞桿14a的末端。如第3圖 所示，當活塞桿14a伸長時，左右的光閘15進入UV燈13上 方，末端彼此對接形成關狀態，而使來自UV燈13朝上方的 紫外線照射被遮斷。又’如第5(b)圖所示，當活塞桿14a縮 小時，各光閘15便自UV燈13上方退避形成開狀態，而使來 自UV燈13的紫外線朝向平台12照射。201031695 VI. Description of the Invention: [Technical Field] The present invention relates to a single side of a resin coated member when a thin plate-shaped workpiece such as a material conductor wafer is ground into a plane, and the resin The side surface is formed as a method of polishing the reference surface of the workpiece. [Prior Art 3] A semiconductor wafer which is a material of a semiconductor or an electronic component is exemplified by a single crystal material such as ruthenium or a compound composed of a compound having a complex element. These wafers are formed into a cylindrical ingot, which is then sliced into a substrate by a wire saw or the like, and further processed by performing operations such as coating and etching to remove undulations and warpage which occur during slicing. Make it both flat and thin. However, in order to perform the above etching, it is necessary to supply the reaction gas k around the wafer to be retained, and to apply a large-voltage device such as high-voltage electricity to the reaction gas to ionize it. Further, as the gas which can be used for etching the wafer, a fluorinated gas such as SF6 can be exemplified. However, this type of gas system is a green body and is expensive. Therefore, in order to carry out the money engraving, it is necessary to use large-scale equipment and high-priced gas, and there are disadvantages such as high cost. Then, there has been proposed a method in which a resin or a wax is applied to one side of a wafer to form a coating, and then the wafer is polished to remove undulations and warpage of the wafer (see Patent Document 2). . In these methods, by coating the resin to be cured, a flat coating is formed on the surface, and the wafer is polished with the surface of the 201031695 coating as a reference surface, and the undulation and warpage of the wafer are removed to form a crystal. The circle is processed to be flat. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2006-269761. The thickness of the coating on one side of the wafer may cause the following problems. For example, when the thickness of the coating applied to the wafer is thin, the undulation and warpage cannot be sufficiently absorbed by the coating. In addition, when the thickness of the coating applied to the wafer is large, when the polishing apparatus is pressed to the wafer by the general polishing apparatus to perform wafer polishing, the wafer may be deviated from the polishing due to the elastic action of the coating. It is difficult to polish the wafer into a uniform thickness even if the stone can be removed and warped. On the other hand, by the method of Patent Document 2, since the coating can be controlled to an appropriate film thickness, undulation and warpage can be effectively removed. However, since the resin or the like is cured in a state where the internal stress remains in the wafer, if the coating is removed after the wafer is polished, the internal stress remaining in the wafer may cause undulations and warpage to recover again. The situation of the spring back phenomenon is not necessarily satisfactory. Therefore, the present invention is directed to providing a resin coating method and apparatus for polishing a thin plate-like workpiece such as the wafer including deformation elements such as undulation and warpage to a flat shape, and coating the workpiece with a resin member 201031695. The undulation and warpage of the workpiece are removed on one side and appropriately, and as a result, the workpiece after the grinding can be formed flat. Means for Solving the Problem The resin coating method of the present invention is a method of polishing a surface of a thin plate-shaped workpiece including a deformation element such as undulation and warpage, and flattening the resin coating on the other side of the workpiece. The method is characterized in that it has at least the following steps: the pressing step of the working piece is to press the working piece from the side of the one side to the resin by the pressing mechanism; the moving part of the working piece is to keep the working piece in the hold In the state of the pressing mechanism, the working piece is moved to at least the position corresponding to the deformation element in accordance with the direction of the other facing side, and the pressing mechanism separating step is to separate the pressing mechanism from one side of the working piece; and the resin hardening step, The resin is cured by the stimulation of the curable resin by the external stimulation imparting means. In the resin coating method of the present invention, by moving the workpiece at least to the position corresponding to the deformation element in the moving step of the workpiece, the workpiece which is flattened by the squeezing can be caused by the resin flowing while The internal stress returns to its original shape, or to a state close to its original shape. In the present invention, "the position corresponding to the deformation element" means a position at which the workpiece can be deformed in the pressing step to return to the original shape. By performing the movement of the jade piece, the fruit piece can be used to reproduce the deformed state before the pressing force on the resin. After the resin is hardened and the resin is hardened and the __ surface of the red component is removed, the workpiece is less likely to be deformed when it is removed from the work, and the polishing can be made flat to maintain the current flat state. In the present invention, in the step of pressing the work piece, the following shape 201031695 is included. The work piece is held in the pressing mechanism in a state in which the surface of the work piece is in close contact and the wall is deformed, and the work piece is held. The workpiece is pressed against the curable resin. The above-mentioned curable resin used in the resin coating method of the present invention can be exemplified by a strand hardening resin which is hardened by ultraviolet irradiation; and at this time, the loading mechanism is an ultraviolet irradiation mechanism which emits ultraviolet rays. . The other curable resin may, for example, be a thermosetting resin which is hardened by heating; or a plastic resin which is liquefied by heating and hardened by cooling. In the case of a thermosetting resin, the external stimulator mechanism is a heating mechanism for heating; and in the case of a plastisol resin, the external stimuli imparting mechanism is a cooling mechanism for cooling. In the resin coating device of the present invention, the resin coating method of the present invention can be suitably carried out. The feature 9 includes at least a workpiece holding mechanism that is detachably held in a state in which the other surface is exposed. The platform is a work piece mounting surface that is disposed opposite to the guard holding mechanism, and the hardening resin is supplied to the cutting face of the social work piece, and the pressing mechanism is maintained in the guard piece. The working member of the scale mechanism is supplied to the hardener resin pressing surface of the workpiece mounting surface of the platform; and the moving mechanism is configured to press the pressing pressing mechanism to press the aforementioned working member of the hardening grease, according to the aforementioned other-facing The above-described direction shift and external stimulus imparting means impart external stimuli to the workpiece-hardening resin supplied to the platform. Further, the working member referred to in the present invention is not particularly limited, and examples thereof include a wafer composed of a semiconductor crystal compound composed of 201031695 Shi Xi or Kunming Gallium. Effect of the Invention Round or Inorganic by Sapphire (Alumina Oxide) According to the present invention, at least the movement to the corresponding deformation element can be made by pressing the workpiece which is pressed to the resin coated on the platform in a direction away from the platform. Since the original state of deformation is reproduced, the effect can be obtained: even if the resin is removed from the workpiece after polishing, no deformation occurs, and a flat workpiece can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a wafer coated with a resin on one side in an embodiment of the present invention. Fig. 2 is a perspective view of a resin coating device according to an embodiment of the present invention. 3(a) to 3(()) are cross-sectional views showing a resin coating step of one embodiment. Figs. 4(a) and 4(b) are diagrams showing a resin coating step of an embodiment ( Fig. 5(a) and Fig. 5(b) are cross-sectional views showing the resin coating step (continued Fig. 4) of the embodiment. Fig. 6 is a view showing the polishing wafer. A side view of a polishing apparatus (grinding shaft) according to an embodiment. Figs. 7(a) to 7(d) are sectional views showing a polishing step. Figs. 8(a) to 8(c) are diagrams showing A perspective view of a resin coating step according to another embodiment of the present invention. 201031695 [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the drawings. [1] Semiconductor wafer ~ Fig. 1 A semiconductor wafer (hereinafter referred to as a wafer) in the embodiment, wherein the crystal SU is formed by a scale of a cylindrical material composed of a stone ore, and a thickness of the steel ore slice is obtained. Wafer i 起 caused by undulations and warpage caused by the resistance generated during cutting. The wafer 1 is attached to the back. _After having an ultraviolet curable resin and hardening the surface after the hardening of the surface, and then grinding the back surface lb to be flattened, a pattern composed of a plurality of devices having an electronic circuit is formed on the surface to be polished. 2] Structure of Resin Coating Apparatus FIG. 2 is a resin coating apparatus 1 according to an embodiment, which supplies a resin to the back surface ib of the crystal m 1 and hardens it. In FIG. 2, the symbol ^ is hollow. Abutment, and the upper portion of the abutment is provided with a rectangular plate-like platform 12 as a flat upper and horizontal work piece mounting surface 12a. Since the platform 12 is made of ultraviolet permeable borosilicate glass or quartz glass The lower surface of the platform 12 faces the hollow in the base I. The bottom of the base 11 is provided with a plurality of UV lamps 13 that irradiate the upper platform 12 with ultraviolet rays (ultraviolet light). In the abutment, a rectangular plate-shaped shutter 15 is provided, which can advance and retreat above the uv lamp 13 by the cylinder 14, and the ultraviolet light of the UV lamp 13 is directed upward to block the light path when entering. The shutter 15 is Only one is shown in Figure 2, but it is like 3 shows a pair of left and right, 201031695 and a round body 14 connected to each shutter 15. The round body 14 has a piston rod 14a that is horizontally stretched toward the base 11 and the shutter 15 is horizontally Fixed to the end of the piston rod 14a. As shown in Fig. 3, when the piston rod 14a is extended, the left and right shutters 15 enter the UV lamp 13, and the ends abut each other to form an OFF state, and the ultraviolet rays from the UV lamp 13 are upward. The irradiation is interrupted. Further, as shown in Fig. 5(b), when the piston rod 14a is contracted, the shutters 15 are retracted from above the UV lamp 13 to form an open state, and the ultraviolet rays from the UV lamp 13 are directed toward the stage 12. Irradiation.
如第3圖所示，在基台11内之光閘15的上方，配置有將 紫外線以外的光遮斷之矩形板狀的濾光片16。藉由該渡光 片16,將基台11内之空間上下區隔開來。如第2圖所示，在 基台11之側壁部11a設有連通至基台丨丨内之濾光片16上方 空間的圓筒狀管17。該管17連接有圖未示之排氣機構，其 係將基台11内之空氣吸引並排出者。 基台11内’溫度因1；條13所照射的紫外線而上升，因 此平台12受熱膨脹，有平台12的卫作件衫仙a的平运 度低下之疑慮。因此，藉由使平台12下面側的空 : 向外部排出_作，可使平台12的溫度上升受到:因 而得以維持X作件載置面12a的平坦度。再者，亦2 ^將不必要之光成分遮斷，以維私作 、、一，，牡丞扫11您平台12的内側設立右书 18並進-步在該背板部18的上端部形成 上方之簷邱1Q。认1 π ’延伸至平 Ρ19於是，晶圓1被水平地吸附而保持在 201031695 19，且於簷部19設有可使所保持的晶圓丨朝下方移動之晶圓 保持機構20。 晶圓保持機構20係具備有：主桿21，其係自簷部19約略 中心的位置，朝下方的平台12與簷部19之間的空間延伸 者，複數(在此為4支)之副桿22，其係被配置於前述主桿21 的周圍者；及水平固定於該等桿21、22之下端的圓板狀押 壓塾23。互相平行設置之各桿21、22，其上端部具備有驅 動部21A、22A，且該等驅動部21A、22A係被固定於廣部 19。若使驅動部21A、22A各自運轉，則各桿21、22以朝下 方伸長或往上方縮小方式運作，押麼塾23便隨著各桿21、 22的伸縮而升降。 如第3圖所示，在押壓墊23下表面的大部分設有吸附部 24。該吸附部24係藉由多孔材質形成為圓板狀者，而在使 所接續之圖未不的空氣吸引源運轉時，便會有負壓發生於 吸附部24之平坦的下表面之吸附面24a，使晶圓！被吸附而 保持於該吸附面24a。如第3(c)圖所示，若使包含起伏及麵 曲之晶圓1吸附於吸附部24 ’晶圓1會緊貼於吸附面24a，且 起伏及翹曲等變形受到矯正而成為大致平垣狀態。 [3]樹脂被覆裝置的動作 以下說明前述樹脂被覆裝置10的動作。在該動作中，包 含有本發明之樹脂被覆方法。 就初期的狀態而言’如第3(a)圖所示，雖然uv燈13經常 以ON的狀態照射紫外線’光閘15關閉則紫外線不會時射到 平台12。又，押壓塾23係被定位於上方的待機位置。 10 201031695 由該狀態’如第3(b)圖所示，將液狀的樹脂塊狀的 狀態，供給預定量至平台12之工作件載置面i2a的中央。所 供給之樹脂P1，係使用藉由受到紫外線之照射而硬化之紫 外線硬化型，黏度係選擇例如5〇〜3〇〇〇〇mPa左右者。接下 來，如第3(c)圖所示，將晶圓1載置於已供給至工作件載置 面12a的樹脂pi。As shown in Fig. 3, a rectangular plate-shaped filter 16 for blocking light other than ultraviolet rays is disposed above the shutter 15 in the base 11. The space above and below the space in the base 11 is separated by the light-passing sheet 16. As shown in Fig. 2, a cylindrical tube 17 that communicates with the space above the filter 16 in the base cymbal is provided in the side wall portion 11a of the base 11. The tube 17 is connected to an exhaust mechanism (not shown) which sucks and discharges the air in the base 11. The temperature in the base 11 rises due to the ultraviolet rays irradiated by the strip 13 , so that the platform 12 is thermally expanded, and there is a concern that the flatness of the platform 12 is low. Therefore, by causing the space on the lower side of the stage 12 to be discharged to the outside, the temperature rise of the stage 12 can be increased: the flatness of the X-piece mounting surface 12a can be maintained. Furthermore, 2 ^ interrupts the unnecessary light component to make a private operation, and the oyster sweep 11 sets the right book 18 on the inner side of the platform 12 and advances in the upper end portion of the back plate portion 18. Above the Qiu Qiu 1Q. It is recognized that 1 π ' extends to the flat 19, and the wafer 1 is horizontally adsorbed and held at 201031695 19, and the wafer 19 is provided with a wafer holding mechanism 20 for moving the held wafer 丨 downward. The wafer holding mechanism 20 is provided with a main rod 21 which is located approximately at the center from the crotch portion 19, and extends to a space between the lower platform 12 and the crotch portion 19, and a plurality of (here, four) The rod 22 is disposed around the main rod 21; and a disc-shaped pressing dam 23 horizontally fixed to the lower ends of the rods 21, 22. The rods 21 and 22 which are disposed in parallel with each other are provided with driving portions 21A and 22A at their upper end portions, and the driving portions 21A and 22A are fixed to the wide portion 19. When the drive units 21A and 22A are operated, the rods 21 and 22 are operated to be extended downward or downward, and the rods 23 are lifted and lowered as the rods 21 and 22 expand and contract. As shown in Fig. 3, a large portion of the lower surface of the pad 23 is provided with an adsorption portion 24. The adsorption unit 24 is formed into a disk shape by a porous material, and when the air suction source of the connected image is operated, a negative pressure is generated on the adsorption surface of the flat lower surface of the adsorption unit 24. 24a, make the wafer! It is adsorbed and held on the adsorption surface 24a. As shown in Fig. 3(c), when the wafer 1 including the undulation and the meandering is adsorbed to the adsorption portion 24', the wafer 1 is in close contact with the adsorption surface 24a, and the deformation such as undulation and warpage is corrected to become rough. Flat state. [3] Operation of Resin Coating Device The operation of the resin coating device 10 will be described below. In this operation, the resin coating method of the present invention is contained. In the initial state, as shown in Fig. 3(a), although the uv lamp 13 is always irradiated with ultraviolet rays in the ON state, the shutter 15 is turned off, and the ultraviolet rays are not incident on the stage 12. Further, the pressing pressure 23 is positioned at the upper standby position. 10 201031695 In this state, as shown in Fig. 3(b), the liquid resin block state is supplied to the center of the workpiece mounting surface i2a of the stage 12 by a predetermined amount. The resin P1 to be supplied is an ultraviolet curable type which is cured by irradiation with ultraviolet rays, and the viscosity is selected, for example, from about 5 〇 to about 3 〇〇〇〇 mPa. Next, as shown in Fig. 3(c), the wafer 1 is placed on the resin pi which has been supplied to the workpiece mounting surface 12a.
接著，使驅動部21A、22A運轉，往桿21、22下方延伸 而使押壓墊23下降，使吸附部24之吸附面24a對接到押壓墊 23的表面la，並進一步使押壓墊23下降，而將晶圓丨向樹脂 P1押壓。於是，如第4(a)圖所示，樹脂ρι被展開而形成由晶 圓1之老面路出之狀態，而可確保樹脂Pl均勻地展開於背面 lb之全面的狀態（工作件押壓步驟）。 斤迷使树脂P1塗布於晶圓1之背面lb全面後，於押 壓墊23之吸附部24使負壓產生，並使晶圓！之表面&吸附於 吸附面24 a，而成為以吸附部24保持了變得平坦的晶圓工之 狀態。若以吸附部24保持了晶圓！，則會停止驅動部Μ、 22A之運轉，或減弱因運轉而賦予至樹脂卩丨的壓力^於是， 減弱了藉押壓墊23將晶圓1押壓至樹脂ρι的荷重，受到樹脂 P1之反彈’如第4_所示，保持於押壓肋之晶圓^微微 上升’樹賴的厚度藉“有些許增加(卫作件移動步驟卜 在此’晶圓1的上升量，係在上升後讀脂_厚度内，晶 HU回復卿、本的職之_充分地實蘭位置為止 到變形要素的位置）。 ^ 接著，停止機墊23之Μ運轉轉除了晶U】之保持 201031695 狀態後，如第5(a)圖所示，使押壓塾23上升回到待機位置， 再使吸附面24a由晶圓1之表面la分離（押壓機構分離步 驟）。若使押壓塾23從晶圓1分離，則已被平坦化之晶圓1會 因内應力而變形，從平坦的狀態回到原本的狀態。此時晶 圓1之變形，因樹脂P1尚未受到硬化處理而為可能，而變形 是在使樹脂P1流動時產生的。 接下來，如第5(b)圖所示將光閘15打開。於是，自UV 燈13所發出之紫外線會通過濾光片16而照射到樹脂pi(樹 脂硬化步驟）。受紫外線照射之樹脂P1硬化，且在晶圓1之 © 背面lb使緊貼於背面lb之樹脂膜P2形成，成為可從工作件 載置面12a將晶圓1取出的狀態。樹脂膜P2之緊貼於工作件 載置面12a之表面（下表面），係藉由轉印平坦的工作件載置 面12a而形成為平坦狀。 [4]藉由晶圓研磨之平坦加工 經如上述之過程’背面lb受到樹脂膜P2所被覆之晶圓 1 ’開始進行兩面被研磨之平坦加工步驟。第6圖顯示用於 研磨晶圓1之研磨轴30及夾頭台40。 β 研磨轴30之構成為，使藉由馬達32而旋轉之主軸桿33 内藏於圓筒狀的外罩31内，砂輪35透過凸緣34固定於主桿 軸33。研磨轴3〇，係設置成主桿轴33之轴方向係沿上下方 向之狀態’且可以圖未示之升降機構進行升降。砂輪35， 係使複數之磨片37環狀排列固著於環狀的框36之下表面 者。 夾頭台40 ’係以與砂輪35相對的方式設置於研磨轴30 12 201031695 的下方。夾頭台40之水平的上表面，係由藉負壓的作用吸 附保持工作件之吸附部41所構成。該吸附部41係與上述樹 脂被覆裝置10的押壓塾23之吸附部24相同者，藉多孔質材 料形成為圓板狀，上表面為吸附面41a。夾頭台40係藉圖未 示之旋轉驅動機構而旋轉。 晶圓1之研磨，首先，如第6圖所示，使樹脂膜P2吸附 於吸附部24之吸附面24a，在表面la露出的狀態下將晶圓保 持於夾頭台40。接著，使夾頭台40旋轉，另一方面，在使 研磨軸30下降的同時將旋轉的磨石37壓到晶圓1的表面。藉 此研磨晶圓1之表面la。再者，在此情況下，旋轉的砂輪35 之外周部通過正在旋轉之晶圓1的中心，藉此可研磨晶圓1 之表面全面，將表面加工成平坦。 如第7(a)圖所示，在將晶圓1的表面1&加工成平坦後， 接著如第7(b)圖所示，將樹脂膜p2從晶圓丨的背面lb剝離除 去。如此，在使被研磨之表面la吸附於吸附面24a，背面lb 路出之狀態下’將晶圓保持於夾頭台4〇。接著使夾頭台 旋轉而藉研磨軸30研磨背面lb，如第7(c)圖所示，將背面比 加工成平坦。如上所述，如第7(d)圖所示，將表面。及背面 ib加工成平坦且相互平行，而得到厚度均勻之晶圓t。 [5]實施形態的作用效果 如上所述，在以樹脂被覆裝置將樹脂膜^被覆於晶圓丨之背 面lb的實施形態中，係以下述順序作為重點：將載置於樹 脂P1上之含有起伏與翹曲的晶圓丨以押壓墊23向樹脂 壓後，將晶圓1保持於押壓墊23再使晶圓丨上升，之後，將 13 201031695 樹脂pi硬化等。 藉由在押壓後使晶圓1上升而增加樹脂P1之厚度，利用 押壓而平坦化之晶圓1，在使樹脂P1流動的同時因内應力變 形而回到原本的形狀，而得以再現押壓前的變形狀態。因 此’在使樹脂P1硬化的狀態下，將晶圓1保持在原本的變形 狀態，即使在將樹脂膜P2自晶圓1除去後，也不易於晶圓1 產生變形。因此，研磨為平坦之晶圓1便保持於那樣的平坦 狀態。 又’由於是在使押壓墊23自晶圓1分離之前，使晶圓1 緊貼於樹脂P1而矯正為平坦的狀態，因此可使在樹脂P1上 的該晶圓1成為具有考慮了有重力環境下所生之撓曲的嚴 密平坦度者。迄今從未考慮因撓曲所生之晶圓的變形，而 將變形了的晶圓直接載置於樹脂上，而以含有因撓曲所生 之變形的形狀被固定在樹脂上，之後，進行研磨。 因此’習知的晶圓為包含因撓曲所造成之内應力者， 在無重力環境下會因撓曲造成之内應力而產生新的翹曲。 然而藉由被橋正為平坦，之後，繞正被解除之晶圓丨，由於 重力的影響受到緩和，藉此以主要因翹曲而變形之形狀固 疋於樹脂P1上。因此，所得到之晶圓丨不含因撓曲所造成之 内應力，或接近該狀態。其結果，晶圓1即使在無重力下也 會成為更接近平坦的形狀。 再者，作為使用之樹脂，適度的黏度及厚度是在考慮 了晶圓1的素材及構造、形狀，更甚至是原來就存在的内應 力等種種要素後所選定的，藉此，可更顯著地獲得本發明 14 201031695 - 之效果。亦即，一般認為適度的黏度及厚度，係可容許矯 正被解除後之晶圓因翹曲而起之變形，且可抑制因撓曲而 起之變形者。換言之，可說是以與因重力產生於晶圓之力 大致等同之力形成回復狀態的樹脂。 [6]依其他實施形態之樹脂被覆裝置的動作 雖然在上述實施形態中，是如第3(c)圖所示，將晶圓1 載置於已供給至平台12的樹脂P1上後，再將該晶圓1向樹脂 P1進行押壓，但亦可將已矯正變形而成為平坦之晶圓1向樹 脂P1進行押壓。 藉由將晶圓1吸附再矯正，晶圓1會變形以使原本的起 伏與翹曲等變形被平坦化。又押壓樹脂Ρ1，使供應至平台 . 12之工作件載置面12a之樹脂Ρ1擴展，且由於晶圓1被平坦 化，可容易地將樹脂P1均勻地延展於晶圓1之背面lb全面。 又’還具有氣泡變得不易進入晶圓1與樹脂P1之間等優點。 再者，本實施形態中，是將塊狀的樹脂P1供給至平台 12之工作件載置面12a，藉由以晶圓1押壓該樹脂P1，將樹 脂P1塗布於晶圓1之背面lb之形態。在該形態下，所使用之 樹脂P1的量可為能被塗布於晶圓1之背面lb之最低限度的 量’就結果而言可謀求樹脂使用量之減少而減低成本。又， 由於可在要使用之前才供給樹脂P1，因此亦可使用黏度低 的樹脂’而能擴增黏度的選項，使晶圓1更接近平坦。在這 樣的實施形態中，因為有將樹脂P1押壓而擴展的必要，本 實施形態特別有效。 亦即’如第8(a)〜(b)圖所示，若將樹脂供給至平台12之 15 201031695 作件載置面12a_L ’會使負壓發生於押壓塾23之吸附部 24，如第8(c)圖所示，使晶i的表面吸附於吸附部％的吸 附面24a。在起伏與㈣之外，含有前述之撓曲之變形的晶 圓1緊貼於吸附面24a而變形被橋正，在平坦的狀態下保持 於押壓墊23。接著，使押壓墊23下降而使平坦的晶圓ι之背 面lb緊貼於樹脂P卜藉由進一步使其下降，如第4⑷圖所 示’使晶圓1向樹脂P1押壓。其後進行與上記實施形態相同 之動作而於晶圓1的背面lb形成樹脂膜p2。 再者，雖然在上述實施形態中，樹脂ρι對平台12之工 0 作件載置面12a之供給，是將必需量之樹脂ρι直接供給至工 作件載置面12a，然而本發明方法並不受限於該供給方式。 例如，亦可採用以下方式：使預先塗布了樹脂的薄膜之塗 布有樹脂之面位於上側，而供給至平台丨2之工作件载置面 12a’使吸附於押壓墊23之晶圓緊貼於該薄膜之上表面的樹 脂上，進行押壓，藉此將樹脂塗布於晶圓的背面。 又，在晶圓1為含有翹曲之形狀的情況下，宜使趣曲的 凸側之面吸附於押壓墊23之吸附部24，以利於在矯正解除 ® 後使樹脂P1流動的同時使翹曲恢復容易發生。 【圖式簡單說明】 第1圖為本發明之一實施形態中，於單面被覆有樹脂之 晶圓的剖面圖。 第2圖為本發明之一實施形態之樹脂被覆裝置的立體 圖。 第3(a)圖〜第3(c)圖為顯示一實施形態之樹脂被覆步驟 16 201031695 的剖面圖。 第4(a)圖、第4(b)圖為顯示一實施形態之樹脂被覆步驟 (接續第3圖）的剖面圖。 第5(a)圖、第5(b)圖為顯不一實施形癌之樹脂被覆步驟 (接續第4圖）的剖面圖。 第6圖為顯示研磨晶圓之一實施形態之研磨裝置(研磨 軸）的侧視圖。 第7(a)圖〜第7(d)圖為顯示研磨步驟之剖面圖。 ® 第8(a)圖〜第8(c)圖為顯示本發明之其他實施形態的樹 脂被覆步驟之立體圖。 【主要元件符號說明】 1…晶圓(工作件） 19...詹部 la…晶圓的表面(一面） 20…晶圓保持機構(工作件保持機 lb…晶圓的背面(另一面） 構、押壓機構、工作件移動機構) 10…樹脂被覆裝置 21...主桿 11...基台 21A...驅動部 12...平台 22…副桿 12a..工作件載置面 22A…驅動部 13…UV燈(外在刺激賦予機構） 23...押壓墊 14…圓柱體 24...吸附部 14a···活餅 24a···吸附面(平坦面） 15...光閘 30…研磨轴 16...濾光片 31...外罩 18…背板部 32...馬達 17 201031695 33...主軸桿 41...吸附部 34...凸緣 41a...吸附面 35…砂輪 P1…樹脂(硬化前的樹脂） 36…框 P2"樹脂膜(硬化後的樹脂) 37…磨片(磨石） 40...爽頭台 18Next, the driving units 21A and 22A are operated to extend below the rods 21 and 22 to lower the pressing pad 23, and the adsorption surface 24a of the adsorption unit 24 is brought into contact with the surface la of the pressing pad 23, and the pressing pad 23 is further advanced. Dropped and the wafer is pressed against the resin P1. Then, as shown in Fig. 4(a), the resin is expanded to form a state in which the old surface of the wafer 1 is out, and the resin P1 is uniformly spread over the entire surface of the back surface lb (the work piece is pressed). step). After the resin P1 is applied to the back surface 1b of the wafer 1, the negative pressure is generated by the adsorption portion 24 of the pressure pad 23, and the wafer is produced! The surface & is adsorbed on the adsorption surface 24a, and is in a state of being held by the adsorption unit 24 to be flat. If the wafer is held by the adsorption unit 24! Then, the operation of the driving unit Μ, 22A is stopped, or the pressure applied to the resin 因 by the operation is weakened. Thus, the load of the nip pad 23 to press the wafer 1 to the resin ρ is weakened, and the resin P1 is pressed. The rebound 'as shown in the 4th_, the wafer that is held in the pressure ribs ^ slightly rises 'the thickness of the tree depends on the "some increase" (the moving parts of the moving step in this 'wafer 1' rises, is rising After reading the grease _ thickness, the crystal HU replies to the clerk, the position of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ As shown in Fig. 5(a), the pressing pressure 塾 23 is raised back to the standby position, and the adsorption surface 24a is separated from the surface la of the wafer 1 (the pressing mechanism separation step). When the wafer 1 is separated, the wafer 1 which has been flattened is deformed by internal stress, and returns from the flat state to the original state. At this time, the deformation of the wafer 1 is possible because the resin P1 has not been subjected to the hardening treatment. The deformation is generated when the resin P1 flows. Next, the light is as shown in Fig. 5(b) 15. The ultraviolet light emitted from the UV lamp 13 is irradiated to the resin pi through the filter 16 (resin hardening step). The resin P1 irradiated with ultraviolet rays is hardened, and is adhered to the back surface lb of the wafer 1 The resin film P2 of the back surface 1b is formed, and the wafer 1 can be taken out from the workpiece mounting surface 12a. The resin film P2 is in close contact with the surface (lower surface) of the workpiece mounting surface 12a by rotating The flat workpiece mounting surface 12a is printed to be flat. [4] The flat processing by wafer polishing is performed by the process of the above process "the wafer 1 1 covered by the resin film P2 on the back surface lb" The flat processing step is shown in Fig. 6. The polishing shaft 30 and the chuck table 40 for polishing the wafer 1 are shown. The β grinding shaft 30 is configured such that the spindle rod 33 rotated by the motor 32 is embedded in a cylindrical shape. In the outer cover 31, the grinding wheel 35 is fixed to the main rod shaft 33 through the flange 34. The grinding shaft 3 is disposed in a state in which the axial direction of the main rod shaft 33 is in the up and down direction, and can be raised and lowered by a lifting mechanism not shown. The grinding wheel 35 is configured to fix a plurality of grinding discs 37 in a ring shape and fixed to the ring. The lower surface of the frame 36. The chuck table 40' is disposed below the grinding shaft 30 12 201031695 in a manner opposite to the grinding wheel 35. The horizontal upper surface of the chuck table 40 is adsorbed by the action of negative pressure. The adsorption unit 41 is configured to hold the suction unit 41. The adsorption unit 41 is formed in a disk shape by a porous material, and the upper surface is an adsorption surface 41a. The chuck table 40 is rotated by a rotation driving mechanism (not shown). First, as shown in Fig. 6, the resin film P2 is adsorbed to the adsorption surface 24a of the adsorption portion 24, and is exposed on the surface la. The wafer is held in the chuck stage 40 in the state. Next, the chuck table 40 is rotated, and on the other hand, the rotating grindstone 37 is pressed against the surface of the wafer 1 while the polishing shaft 30 is lowered. Thereby, the surface la of the wafer 1 is ground. Further, in this case, the outer peripheral portion of the rotating grinding wheel 35 passes through the center of the wafer 1 being rotated, whereby the surface of the wafer 1 can be polished to the entire surface, and the surface can be processed to be flat. As shown in Fig. 7(a), after the surface 1& of the wafer 1 is processed to be flat, the resin film p2 is peeled off from the back surface 1b of the wafer cassette as shown in Fig. 7(b). In this manner, the wafer 1 is held by the chuck table 4 while the surface 1a to be polished is adsorbed on the adsorption surface 24a and the back surface 1b is ejected. Next, the chuck table is rotated to grind the back surface lb by the grinding shaft 30, and as shown in Fig. 7(c), the back surface ratio is processed to be flat. As described above, as shown in Fig. 7(d), the surface will be. And the back side ib is processed into flat and parallel to each other to obtain a wafer t having a uniform thickness. [5] Effect of the embodiment As described above, in the embodiment in which the resin film is coated on the back surface 1b of the wafer cassette by the resin coating device, the following procedure is focused on the inclusion of the resin P1. The undulating and warped wafer 压 is pressed against the resin by the pressing pad 23, and the wafer 1 is held on the pressing pad 23 to raise the wafer ,, and then the 13 201031695 resin pi is hardened. By raising the thickness of the resin P1 after the pressing, the thickness of the resin P1 is increased, and the wafer 1 flattened by the pressing force returns to the original shape due to the internal stress deformation while flowing the resin P1, and is reproduced. Deformation state before pressing. Therefore, in the state where the resin P1 is cured, the wafer 1 is held in the original deformed state, and even after the resin film P2 is removed from the wafer 1, the wafer 1 is not easily deformed. Therefore, the wafer 1 polished to be flat is maintained in such a flat state. In addition, since the wafer 1 is brought into close contact with the resin P1 and corrected to a flat state before the pressure pad 23 is separated from the wafer 1, the wafer 1 on the resin P1 can be considered. The tight flatness of the deflection produced by gravity. Heretofore, deformation of the wafer generated by the deflection has not been considered, and the deformed wafer is directly placed on the resin, and is fixed on the resin in a shape containing deformation due to deflection, and then, Grinding. Therefore, the conventional wafer contains internal stress due to deflection, and new warpage is caused by internal stress caused by deflection in a gravity-free environment. However, by being bridged to be flat, the wafer crucible which is being released is then relaxed due to the influence of gravity, whereby the shape which is mainly deformed by warpage is fixed to the resin P1. Therefore, the resulting wafer defect does not contain or is close to the internal stress caused by the deflection. As a result, the wafer 1 becomes a shape closer to a flat shape even without gravity. Further, as the resin to be used, an appropriate viscosity and thickness are selected in consideration of various materials such as the material, structure, shape, and even internal stress of the wafer 1, thereby making it more remarkable. The effect of the invention 14 201031695 - is obtained. In other words, it is generally considered that the moderate viscosity and thickness allow deformation of the wafer after the correction is released due to warpage, and deformation due to deflection can be suppressed. In other words, it can be said that the resin is in a recovery state with a force substantially equal to the force generated by gravity on the wafer. [6] Operation of the resin coating device according to another embodiment In the above embodiment, as shown in the third (c), the wafer 1 is placed on the resin P1 that has been supplied to the stage 12, and then The wafer 1 is pressed against the resin P1, but the wafer 1 which has been corrected and deformed to be flat may be pressed against the resin P1. By re-adjusting the wafer 1 and re-correcting, the wafer 1 is deformed to flatten the original deformation such as undulation and warpage. Further, the resin crucible 1 is pressed to expand the resin crucible 1 supplied to the workpiece mounting surface 12a of the stage 12. Since the wafer 1 is flattened, the resin P1 can be easily spread uniformly on the back surface of the wafer 1 . Further, there is an advantage that bubbles become difficult to enter between the wafer 1 and the resin P1. Further, in the present embodiment, the block-shaped resin P1 is supplied to the workpiece mounting surface 12a of the stage 12, and the resin P1 is pressed against the back surface of the wafer 1 by pressing the resin P1 on the wafer 1. The form. In this form, the amount of the resin P1 to be used can be the minimum amount that can be applied to the back surface lb of the wafer 1 as a result, and as a result, the amount of resin used can be reduced to reduce the cost. Further, since the resin P1 can be supplied before use, the resin having a low viscosity can be used to expand the viscosity, and the wafer 1 can be made closer to flat. In such an embodiment, this embodiment is particularly effective because it is necessary to pressurize the resin P1. That is, as shown in Fig. 8(a) to (b), if the resin is supplied to the platform 12, 201031695, the workpiece mounting surface 12a_L' causes a negative pressure to occur in the adsorption portion 24 of the pressing port 23, such as As shown in Fig. 8(c), the surface of the crystal i is adsorbed to the adsorption surface 24a of the adsorption portion %. In addition to the undulations and (4), the crystal 1 containing the above-described deflection of the deflection is in close contact with the adsorption surface 24a, and the deformation is bridged, and is held in the flat state by the pressing pad 23. Then, the pressing pad 23 is lowered to bring the back surface lb of the flat wafer ι into close contact with the resin P, and the wafer 1 is pressed against the resin P1 as shown in Fig. 4(4). Thereafter, the resin film p2 is formed on the back surface 1b of the wafer 1 in the same manner as in the above embodiment. Further, in the above embodiment, the supply of the resin ρ to the workpiece mounting surface 12a of the stage 12 is to supply the necessary amount of resin ρ directly to the workpiece mounting surface 12a. However, the method of the present invention does not Limited by this supply method. For example, it is also possible to adopt a method in which the resin-coated surface of the resin-coated film is located on the upper side, and the workpiece mounting surface 12a' supplied to the stage 丨2 is adhered to the wafer adsorbed to the pressing pad 23. The resin is applied to the resin on the upper surface of the film to apply the resin to the back surface of the wafer. Further, when the wafer 1 has a warped shape, it is preferable that the convex side surface of the fun piece is adsorbed to the adsorption portion 24 of the pressing pad 23 to facilitate the flow of the resin P1 after the correction release ® Warpage recovery is easy to occur. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a wafer coated with a resin on one side in an embodiment of the present invention. Fig. 2 is a perspective view of a resin coating device according to an embodiment of the present invention. 3(a) to 3(c) are cross-sectional views showing a resin coating step 16 201031695 of one embodiment. Fig. 4(a) and Fig. 4(b) are cross-sectional views showing the resin coating step (continued Fig. 3) of the embodiment. Fig. 5(a) and Fig. 5(b) are cross-sectional views showing a resin coating step (continued Fig. 4) for performing a cancer. Fig. 6 is a side view showing a polishing apparatus (grinding shaft) of an embodiment of a polishing wafer. Figures 7(a) to 7(d) are cross-sectional views showing the grinding step. ® Figs. 8(a) to 8(c) are perspective views showing a resin coating step in another embodiment of the present invention. [Description of main component symbols] 1... Wafer (working piece) 19... Zhan Department la... Surface of wafer (one side) 20... Wafer holding mechanism (workpiece holder lb... back side of wafer (other side) Structure, pressing mechanism, work piece moving mechanism) 10... resin coating device 21... main rod 11... base 21A... drive unit 12... platform 22... sub-rod 12a. Surface 22A...Drive unit 13...UV lamp (external stimulation imparting mechanism) 23...Pressure pad 14...Cylinder 24...Adsorption unit 14a···Battery cake 24a···Adsorption surface (flat surface) 15 ... shutter 30...grinding shaft 16...filter 31...cover 18...backing plate 32...motor 17 201031695 33...spindle shaft 41...adsorption portion 34...convex Edge 41a...Adsorption surface 35...Wheel P1...Resin (resin before hardening) 36...Box P2"Resin film (resin after hardening) 37... Grinding piece (grinding stone) 40...Shuangtou table 18