201031297 六、發明說明： 【發明所屬之技術領域】 本發明係關於針對伴隨電子製品的輕量化、小型化的電 • 路圖案之高精度化，隔著熱硬化型樹脂將電子構件接合至 . 已貼合至補強板的可撓性薄膜基板之接合方法及接合裝 置。作爲本發明的應用製品，除了後述的COF以外，可舉 出MEMS、影像感測器等。 I 【先前技術】 隨著電子製品的輕量化、小型化，追求印刷電路基板之 圖案化的精細間距（fine pitch)(高精度）化。尤其是， 把電子構件（例如IC ( Integrated Circuit))接合至液晶顯 示面板所使用的COF ( Chip on Film)技術，雖然能以輥對 輥（reel to reel)方式加工長尺化聚醯亞胺薄膜基板同時 獲得微細圖案，但是關於細微化的進展正逐漸逼近界限。 作爲對應更加細微化的方法，提案有：在以可剝離的黏 φ 著劑來貼附在補強板的可撓性薄膜上，形成非常細微的電 路圖案（例如，專利文獻1)。在活用輥對輥方式之既存 設備的情況下，可撓性薄膜基板是在電路圖案形成後從補 強板被剝落，隔著接著材連接其短邊端部而成爲長尺薄膜 • 基板（例如，參照專利文獻2)。如此一來，可撓性薄膜 - 由於溫度、濕度而尺寸改變，對於精細間距化的要求，期 望在從補強板剝離前進行1C接合。 在可撓性薄膜基板中，1C側的金凸塊與可撓性薄膜基板 201031297 內構裝區域之電路圖案，即與內導線（inner lead)之間， 係藉由熱壓著來接合。一旦進行熱壓著，以鍍覆法形成在 內導線表面的錫與凸塊表面的金便會共晶接合。一旦內導 ' 線形成精細間距，內導線表面的錫便會在內導線表面及內 , 導線端部流動而形成瘤狀，成爲鄰接內導線短路的原因。 因此，雖然可將錫的厚度減薄來避免內導線短路，但是由 於有助於接合之錫的絕對量及內導線上的堆積面積減少， 赢 所以金-錫共晶的形成會變得不均勻，接合強度會不足。雖 有爲了均勻形成金·錫共晶而提升接合荷重的對應方法，但 是會發生因荷重過多所造成的凸塊坍塌等情形，在錫的薄 膜化上問題很多。 因此，正在檢討隔著被稱爲ACF ( Anisotropic Conductive Film )、NCP( Non Conductive Paste )及 NCF( Non Conductive Film )的材料來接合可撓性薄膜基板與IC的技術。ACF 係利用薄膜中的導電粒子來接合1C與可撓性薄膜基板 Q 者。例如，提案有如下技術：使用ACF來將1C接合至形 成於玻璃板上之配線圖案上（參照專利文獻3)。 在使用ACF的接合中，藉由凸塊與內導線間存在導電粒 子可確保兩者導通。但是，一旦藉由精細間距化來使內導 ' 線間的距離變小，便因導電粒子會與相鄰的內導線接觸， - 所以有發生配線短路不良的疑慮》因此，在將ACF應用於 接合配置成精細間距之電子構件的凸塊、與細微的電路圖 案的情況下，必須把ACF薄膜內的導電粒子徑縮小。但是， 201031297 從金屬粒子徑的安定化及均勻分散性的觀點來看，使ACF 薄膜內的導電粒子徑縮小是困難的，而且因爲內導線間的 導電粒子數變多，所以在內導線間抗遷移（migration )性 - 降低，使可靠性降低。 . 因此，對適用於精細間距構裝的接合材料，偏好使用不 含導電性材料NCP及NCF。NCP及NCF係將熱硬化型樹脂 形成爲膏狀及薄膜狀者，形成在電子構件與電路圖案間， 在將電子構件壓接後使樹脂硬化而進行接合者。藉由樹脂 ❹ 硬化收縮來把凸塊與內導線更強固地接合。進一步地，相 較於金-錫共晶的接合，可以低溫接合，裝置負荷亦小。但 是，壓著時會因1C凸塊與內導線兩者的滑動而使位置偏移 變大，而有成爲導通不良的可能性。 ' 另一方面，該等熱硬化型樹脂之硬化能藉由從電路圖案 側對1C加熱器加熱及電磁波加熱來進行（例如，參照專利 文獻3)。一般會在形成於可撓性薄膜上的電路圖案上形 φ 成用以保護除了構裝用之熱硬化型樹脂層以外的樹脂層 (稱爲防焊阻劑層）。對於使1C正下方的熱硬化型樹脂， 係考量對1C、及把1C押附在可撓性薄膜基板之加壓工具的 放熱，供給比熱硬化型樹脂的硬化溫度高的熱量。 • 防焊阻劑樹脂的耐熱溫度通常是230 °C至260°C，以200 • °C至250°C溫度使NCP及NCF等熱硬化型樹脂硬化。即， 一旦考慮前述的放熱，便會使硬化用的必要溫度變得比防 焊阻劑的耐熱溫度高。因此，一旦對於可撓性薄膜基板從 201031297 補強板側、藉由例如電磁波加熱來加熱可撓性薄膜基板整 體，防焊阻劑便會因耐熱溫度以上的加熱而變色，發生外 觀上或性能上的問題。 • 先前技術文獻 . 專利文獻 專利文獻1 :特開2003 -298 1 94號公報 專利文獻2 :特開2006-295 1 43號公報 專利文獻3 :專利第36270 1 1號公報 【發明內容】 發明所要解決的問題 如上述，以精細間距來良好地接合1C與薄膜電路基板是 困難的。尤其是，當利用熱硬化型樹脂時’一旦僅以1步 ' 驟進行壓著，在1C凸塊與內導線之間產生滑動的可能性特 別高。又，相較於金屬接合，由於熱硬化型樹脂必須硬化’ 所以接合時間長，而有所謂的生產性低下的問題。再者， ❹ 在可撓性薄膜上形成電路圖案的可撓性薄膜基板，在已貼 附至補強板的狀態下隔著熱硬化型樹脂壓接前述電路圖案 與電子構件的方法中，一旦從載置附補強板的可撓性薄膜 基板的台座（stage )側加熱前述熱硬化型樹脂’則電路圖 • 案上的保護膜之防焊阻劑層的耐熱溫度比前述加熱溫度低 . 而使得防焊阻劑層變色。該變色會成爲外觀不良’此外， 依情況而定防焊阻劑層會劣化，而有絕緣可靠性低下的疑 慮。 201031297 用於解決問題的手段 即’本發明係一種電子構件與可撓性薄膜基板之接合方 法，係隔著補強板及可剝離的有機物層而將電子構件接合 至已貼合可撓性薄膜之可撓性薄膜基板的接合方法，其特 • 徵爲在可撓性薄膜基板上形成熱硬化型樹脂層後，具有： (η第一步驟，係將電子構件押抵至已形成在可撓性薄 膜基板上的熱硬化型樹脂，在該狀態下將熱硬化型樹脂加 ^ 熱至低於硬化溫度，將電子構件配置在可撓性薄膜基板上 的接合位置；及 (2)第二步驟’係一邊對電子構件施加荷重，一邊將前 述熱硬化型樹脂的接合位置加熱至硬化溫度以上而接合電 子構件。 又，本發明之特佳態樣係如申請專利範圍第1項之接合 方法，其中在前述第二步驟具有以下製程：從前述可撓性 薄膜基板下方選擇性地將電子構件接合位置的前述熱硬化 〇 性樹脂層加熱至硬化溫度以上。 再者，本發明之其他態樣係一種接合裝置，該接合裝置 係將電子構件接合至具有複數個已形成防焊阻劑區域及已 形成熱硬化型樹脂區域的可撓性薄膜基板，該接合裝置具 ' 有：台座，係保持前述可撓性薄膜基板；加壓手段，係配 - 置在以前述台座保持前述可撓性薄膜基板之位置的上方， 把前述電子構件押附至前述可撓性薄膜基板；及加熱手 段’係配置在以前述台座保持前述可撓性薄膜基板之位置 201031297 的下方，選擇性地加熱已塗布前述熱硬化型樹脂的區域。 發明的效果 依照本發明，能提供當壓接時電子構件與電路圖案之位 - 置偏移小的穩定接合方法。 . 又，依照本發明之特佳態樣，形成於可撓性薄膜基板之 防焊阻劑便不會遭受因熱所產生的損害而能接合電子構件 與可撓性薄膜基板。 _ 【實施方式】 ❹ 以下針對本發明接合方法及接合裝置加以詳細說明。首 先一開始’使用第1圖就已貼附至補強板的可撓性薄膜基 板100加以說明。 把可剝離的有機物層2形成在單片的補強板3，使用積 層裝置把可撓性薄膜1貼合至有機物層2上。作爲補強板 3’較佳爲效率良好地傳導對熱硬化型樹脂（用於與電子構 件接合）所施加的熱者，可使用鹼石灰玻璃（soda lime ❸ glass )、硼矽酸系玻璃、石英玻璃等無機玻璃類。其較佳 係對電磁波爲透明。這是因爲亦能利用電磁波來作爲加熱 手段。在將紅外線作爲熱源的情況下，矽亦具有透過性， 能採用於補強板。又，作爲可剝離的有機物層2，例如使 ' 用稱爲丙烯酸系或胺基甲酸酯之再剝離型的黏著劑。 - 可擦性薄膜1係以濺鍍及真空蒸鍍法來將金氧半場效電 晶體披膜形成在絕緣性薄膜的單面者。 作爲絕緣性薄膜的材料’能採用聚碳酸酯、聚醚硫、聚 201031297 醯 薄亞。 聚 性醯膜# 、 緣聚銅^ 硫 絕對成M 苯 的金形M 聚 下合上B5 、 底鉻之員 酯。與鎳層 # 二膜高之金 W 乙薄提成合S 酸膠以形鉻 f 甲塑用所鎳十 二等，法該， 萘物層鍍在小 對合底濺法値 聚聚基以鍍阻 、 晶置，濺電 酯液設如以的 二、可例。膜 乙胺亦。佳銅 酸醯膜性性該 甲聚被著著爲 二、屬密密因 苯胺金之的是 對亞 膜胺這 與形成電路圖案4所使用之鍍銅的接著力也充分強固。 ©接著，在已貼合至補強板之可撓性薄膜上形成電路圖案 4。電路圖案 4係通常以銅作爲主體，藉由扣除法 (subtractive method )、半加成法等予以形成。就精細間 距而言，適合使用半加成法。 半加成工法通常依以下順序。在不形成電路圖案之導體 ' 的場所形成光阻圖案後，藉由電解鍍銅來使銅膜析出在沒 有光阻圖案的場所。之後，在除去光阻圖案後，將之前形 成有光阻圖案部分的金屬披膜蝕刻除去。之後，形成作爲 Φ 導體所形成的部分之保護層。保護層係使鍍錫、鍍金等析 出，並使防銹劑吸附在銅表面而形成。因此，電路圖案4 的導體部分係以金屬披膜、由鍍覆所產生的銅膜、保護層 予以形成。亦將該等構造一倂稱爲「金屬層」。在本說明 * 書中，電路圖案4係當作包含具有此種構成之金屬層的區 . 域加以說明。但是，金靥層當然也能適宜地採用除此之外 的構成。 在電路圖案有：構裝電子構件的構裝區域、扇狀（fan out) -10- 201031297 區域、測試墊區域等。構裝區域大多是並行地形成多個爲 了與電子構件之接合用凸塊接合的電路圖案（在COF的情 況稱爲內導線）。由於隨著電子構件的功能提高，輸出輸 • 入數增加，所以內導線寬度變細爲1 0幾V m，而且相鄰的 . 內導線間隔也變窄爲10幾Vm。形成電路圖案4後，接下 來，在電路圖案4上形成用以保護金屬層的防焊阻劑膜5, 藉以製得已貼合至補強板的可撓性薄膜基板100。 接著在可撓性薄膜基板上，塗布用於接合電子構件與內 〇 導線的熱硬化型樹脂6。作爲熱硬化型樹脂的組成，可適 合使用環氧樹脂、聚醯胺醯亞胺樹脂、聚醯亞胺樹脂、聚 胺基甲酸酯樹脂、酚樹脂、三聚氰胺樹脂、不飽和聚酯樹 脂等來作爲主劑，添加用以促進硬化反應的硬化劑。硬化 ' 劑可使用與主劑的樹脂反應性高者，大多使用環氧系樹 脂。雖然就製程簡便性而言，較佳爲事先把硬化劑混合至 主劑的1液性者，但也能採用在塗布前混練主劑及硬化劑 〇 而使用的2液性者。 爲了在電子構件構裝部分形成熱硬化型樹脂層，可使用 分配器（dispenser )及印刷作爲塗布方法。從能夠一次把 熱硬化型樹脂層6形成在複數個電路圖案、生產性高的觀 點來看，印刷法較佳。在採用印刷法的情況下，爲了維持 - 已塗布的熱硬化型樹脂的印刷形狀、及爲了在電子構件接 合前異物不會固著至熱硬化型樹脂表面，較佳爲以熱硬化 型樹脂之硬化點溫度以下進行短時間乾燥而使溶劑蒸發。 -11 - 201031297 又，一旦在電子構件接合後有空隙（void)存在於內導 線及電子構件的凸塊附近的熱硬化型樹脂，便會成爲使接 合可靠性、絕緣可靠性低下的原因。以分配器及印刷法所 . 形成的熱硬化型樹脂大多是黏度高者，流動性比較小。因 . 此，當內導線間隔狹窄時，會有產生空隙的疑慮。爲了避 免產生空隙，較佳爲以提高熱硬化型樹脂之流動性的方式 加熱可撓性薄膜基板。 ^ 具體而言，當接合電子構件時，能藉由將承載可撓性薄 ❹ 膜基板的台座加熱，來加熱經塗布的熱硬化性樹脂層。加 熱溫度的範圍，只要是可獲得樹脂流動性的溫度便足夠， 另一方面設定爲低於硬化溫度。在例如使用 Namics製 8364-160( Tg: 120 °C、硬化溫度：200 °C )作爲熱硬化型樹 ' 脂的情況，加熱溫度較佳爲100°C左右。 又，可撓性薄膜基板內的水分亦爲熱硬化型樹脂內產生 空隙的原因之一。較佳爲在將電子構件朝熱硬化型樹脂接 ❾ 合之前，加熱可撓性薄膜基板，除去可撓性薄膜基板內的 水分。加熱溫度只要是能除去可撓性薄膜基板內水分便足 夠，適合使用80°C至130°C。在已經塗布熱硬化性樹脂層 的情況下，加熱溫度設定爲低於熱硬化型樹脂的硬化溫度β • 用以避免空隙的加熱時間係設定爲可充份除去可撓性薄 • 膜基板內水分的時間。又，亦能在塗布熱硬化型樹脂前進 行用於除去可撓性薄膜基板內水份的加熱。在此情況下， 能無關於熱硬化型樹脂的硬化溫度地決定加熱條件。但 -12- 201031297 是，加熱乾燥後，因爲在第一步驟前的等待中可撓性薄膜 會吸濕，所以較佳爲採取以下對策：設定等待時間’而且 將保管的氣體環境保持爲低濕度。 • 針對本發明第一步驟的接合方法，參照第2圖加以說 . 明。第2圖表示以低於熱硬化型樹脂的硬化溫度押附電子 構件之第一步驟。在此，硬化溫度係指樹脂官能基進行鍵 結，有助於反應之成分的85 %以上會反應（硬化度爲85% 以上）的溫度。 針對熱硬化型樹脂的硬化度，能利用例如FT-IR( Fourier Transform Infrared Spectrometer)分析，由有助於鍵結的反 應性基的波峰強度之減少比例，定量地求出。若舉雙酚型 環氧樹脂爲例，則爲在硬化前後所消耗的環氧基。另一方 ' 面，由於苯環的比例未改變，所以只要來自環氧基的波峰 強度對來自苯環的波峰強度之比例，在硬化後減少85%以 上，便使硬化度爲85%以上。 ❹ 將已貼合至補強板3之可撓性薄膜基板固定在台座9。 固定方法適合使用由台座9所產生的真空吸著。又，亦可 用夾具（chuck)把可撓性薄膜基板端部連同補強板機械性 地押著。如前述，爲了提高熱硬化型樹脂的流動性，防止 • 熱硬化型樹脂內產生空隙，較佳爲先加熱前述基板。 - 加熱、加壓工具8較佳爲具有吸著機構者。這是因爲能 藉由在多孔質陶瓷及電子構件接觸面開設細微的孔而容易 地吸著、把持電子構件。亦可在加熱、加壓工具8之外， -13- 201031297 另外準備使電子構件在電路圖案的構裝區域移動的工具。 接著把電子構件7假壓於內導線部。該第一步驟之目的 爲將電子構件高精度地對位，以在後續製程不會發生位置 • 偏移的程度加以固定。作爲電子構件，可舉出1C及電容 、 器、電阻等電子構件。在該等電子構件中，接合用凸塊及 墊設置在電子構件的接合面。 加熱、加壓工具8從已設定在裝置內之電子構件的收納 盤（未圖示）吸著1個電子構件7。利用對位記號讀取用 ❹ 照相機10、從已吸著在加熱、加壓工具8的電子構件7側 讀取電子構件（未圖示）及台座9上之已形成在電路圖案 的內導線周邊的對位記號（未圖示）。 加熱、加壓工具8的位置控制用控制器1 1計算兩個對位 ' 記號的位置偏移量，爲了補正該位置偏移量而調整加熱、 加壓工具8的位置。之後，加熱、加壓工具8下降而把已 吸著的電子構件朝內導線押抵。此時，能藉由在已把電子 〇 構件朝內導線押抵的狀態下將熱硬化型樹脂加熱至低於硬 化溫度，對熱硬化型樹脂進行某種程度的硬化來假壓著， 防止已予以精度良好對位的電子構件在後續製程之前的處 理（handling)時發生位置偏移。 • 在接合時，至少使構裝區域的熱硬化型樹脂被加熱。第 - 一步驟的假壓著雖然可以將複數個電子構件吸著於1個頭 (head )而同時實施，但是爲了實現高精度接合，較佳爲 逐一進行假壓著。 -14- 201031297 作爲第一步驟，包夾熱硬化型樹脂，能藉由使電子構件 的凸塊與電路圖案之內導線間的距離接近，來使在第二步 驟的押附壓力減小》在第二步驟，電子構件的凸塊會變得 * 難以在內導線上滑動，而有使接合偏移難以發生的效果。 . 過去僅以第一步驟，完成熱硬化型樹脂之硬化而接合電 子構件，熱硬化型樹脂硬化時的押附壓力大，容易產生位 置偏移，本發明藉由將此種接合步驟分成2個，而能避免 位置偏移的問題。又，藉由把接合步驟分成2個而有以下 效果：能降低第一步驟的假壓著溫度，簡便地進行高精度 對位及第一步驟之接合裝置的熱傳導防止對策或者是放熱 對策。 爲了使熱硬化型樹脂的流動性提高，第一步驟的加熱溫 ' 度在低於熱硬化型樹脂之硬化溫度的範圍內越高越好。但 是，確認熱硬化型樹脂沒有性能劣化而設定加熱溫度。能 由加熱、加壓工具8，隔著電子構件加熱熱硬化型樹脂。 ❹ 可藉由在加熱、加壓工具8採用多孔質陶瓷，內藏陶瓷加 熱器，來獲得具有加熱機構及電子構件之吸著機構的加 熱、加壓工具8。 把電子構件朝內導線押附的壓力係考慮在第二步驟所施 加的荷重來決定。在第一步驟，爲使電子構件7被精度良 . 好地對位而予以固定，施加稍微弱的壓力。又在第二步驟， 爲能使電子構件7不會位置偏移地與內導線接合，施加稍 微強的壓力。如過去般，只有第一步驟的加熱、加壓係通 -15- 201031297 常使用15〜30gf/( 1個電子構件凸塊）。但是，依照本發明， 第一步驟以3~10gf/(l個電子構件凸塊）左右爲佳。又， 於本發明，在第一步驟之後，熱硬化型樹脂存在於電子構 • 件與內導線之間，常有未導通的情況。 . 在第一步驟，加熱、加壓的時間係以電子構件與電路圖 案能穩定對位且能在後續製程之前維持精度的方式設定。 亦根據加熱器的升溫速度及溫度安定性，較佳爲0.3秒至3 秒，特佳爲0.5秒至1秒。 〇 作爲把電子構件的接合分成第一及第二的兩個步驟之其 他優點爲提高生產性。與由現在主流的金-錫共晶等所形成 的金屬接合的接合時間約0.1 ~ 1.5秒相比，用於接合電子構 件的熱硬化型樹脂的熱硬化時間爲5秒至數十秒是長的。 因此，一旦逐一加熱、加壓電子構件則生產效率低下。 但是，使用已具備複數個電路圖案之大面積可撓性薄膜 基板，對複數個電子構件同時進行熱硬化型樹脂之硬化， φ 能藉以使生產性提高，即使使用接合時間長的熱硬化型樹 脂也能維持生產效率。本發明之較佳實施態樣之一係在把 電子構件接合至可撓性薄膜基板時，從補強板側加熱可撓 性薄膜基板。當使熱硬化型樹脂硬化時，能藉由把押附電 • 子構件的機構、及加熱熱硬化型樹脂使硬化的機構分離而 . 大量減少裝置設計上的負擔。即，把設備構造單純化同時 能降低設備費用。在同時進行複數個電子構件之接合的設 備之時，將機構分離的效果特別大。 •16- 201031297 接著參照第3圖說明第二步驟之合適態樣之一例。 圖（a)爲裝置的正面圖，第3圖（b)顯示裝置的側面 在第3圖中，顯示使在第一步驟已載置電子構件之已 • 至補強板3的可撓性薄膜基板100,移動至用於進行第 . 驟的台座20後的狀態。當然，亦能在第2圖的台座9 行第二步驟。亦可在以第2圖的台座9吸著、把持已 補強板3的可撓性薄膜基板100的狀態下，讓在第二 所使用的加壓工具21移動過來’亦可使已貼附至補強 ◎ 的可撓性薄膜基板100連著台座9,移動至第二步驟的 工具21所使用的下部。 雖然第3圖顯示本發明第二步驟之接合裝置的整 成，但是本發明的接合裝置並不限定於此。本發明的 ' 裝置具有：台座20，係保持已貼附至補強板3的可撓 膜基板100;及加壓工具21，係押附已配置在可撓性 基板的電子構件。 φ 並未特別限定與電子構件對向之加壓工具下面的面 只要是正常押附電子構件者便可。較佳爲比電子構件 的面積大者。但是，即使是比電子構件上面的面積小 要可確實地把電子構件均勻地押附於可撓性薄膜基板 • 沒有關係。 ^ 又，在同時押附複數個電子構件的情況下’較佳爲 工具具有能押附全部的前述電子構件的面積。爲了效 佳地接合複數個電子構件’較佳爲把可撓性薄膜基板 第3 圖。 貼附 二步 上進 貼附 步驟 板3 加壓 體構 接合 性薄 薄膜 積， 上面 ，只 ，便 加壓 率更 的電 -17- 201031297 路圖案形成爲陣列狀，同時接合每列或每行的電子構件。 又，「同時押附複數個電子構件」或者是「同時實施複 數個電子構件的接合」係指如前述，利用能夠一次押附身 • 爲對象的複數個電子構件之大尺寸加壓工具，把電子構件 . 押附、接合至可撓性薄膜電路基板。於是，進一步包括： 當利用已對應各個電子構件之個別複數個加壓工具，把身 爲對象的複數個電子構件押附至可撓性薄膜電路基板時， 同步實施各個加壓工具的加壓動作。即，於使用複數個加 壓工具的情況下，只要是在不影響既定節拍時間（tact time) 的範圍內，即使加壓動作有偏差亦無妨。 又，「把電路圖案形成爲陣列狀」係指對可撓性薄膜基 板所配置之電子構件在加壓工具寬度的範圍內直.線地鄰接 ' 予以形成的狀態。目的是爲了能利用以加壓工具所進行之 1次性加壓來同時接合複數個電子構件。因此，已配置爲 陣列狀的電子構件的配置，不僅可由複數列或行予以構 φ 成，亦可由單一列或行構成。又，在將電子構件配置爲單 一列或行的情況下，亦可稱爲「配置爲列狀」。在同時加 壓複數個電子構件的情況下，荷重是把平均1個電子構件 的加壓乘以電子構件數而求得。 • 加壓工具21係在前端配置有絕熱、緩衝材22。又，加壓 . 工具21被固定在支柱23,該支柱被固定在空氣驅動的加壓 裝置（未圖示）。藉由加壓裝置的動作，支柱23往下方向 移動，加壓工具抵接至電子構件24且能加壓。支柱23等， -18- 201031297 係藉由台座20上方的臂25所支撐。臂25係進一步固定至 裝置框架（frame)。 針對加壓工具下面的凹凸形狀，一旦面對電子構件的部 - 分具有凸形狀，便能更確實地把電子構件押附至可撓性薄 . 膜基板。但是從以下2觀點來看，其較佳爲平坦，（1)貼 附在加壓工具下面的緩衝材及耐熱材易貼、易更換；（2) 即使在電子構件對可撓性薄膜基板的接合位置有所改變的 情況下，亦不須改變加壓工具。 作爲加熱熱硬化性樹脂的手段，能舉出：把加熱手段放 入加壓工具、設置從台座側加熱的手段、及兩者之組合。 本發明之較佳態樣之一係如前述，能在第二步驟，從補強 板側（即台座側）加熱可撓性薄膜基板。在不加熱加壓工 ' 具的情況下，較佳爲把冷卻機構設置於加壓工具，使第2 步驟的接合溫度條件能不因裝置稼動時間及接合的時間循 環（time cycle)改變而成爲固定。 φ 在加壓工具21不具有加熱手段，且將熱源配置在台座20 的上部之情況下，爲了均勻地加熱構裝區域構裝區域的熱 硬化型樹脂，必須以不會干涉加壓工具2 1動作的方式把熱 源配置加壓工具21的四方周圍。但是，這樣的配置由於充 • 份確保熱源的配置空間，同時加上遮斷從熱源朝驅動機構 . 及定位機構的熱傳導之對策，而使得設備變複雜，故不佳。 第3圖的接合裝置具有由用以使熱硬化型樹脂硬化之電 磁波所構成的加熱手段。加熱手段係配置在台座20的下 -19- 201031297 方。12爲電磁波產生源，13爲使電磁波朝向熱硬化型樹脂 的反射板，14爲備用區塊（backup block) ，15爲電磁波 產生控制器，16爲熱交換器，17爲電磁波。加熱手段不限 • 定於該等物品，可使用電熱線加熱器，亦可使用鹵素加熱 . 器、紫外線燈等電磁波。 第4圖的接合裝置具有用以使熱硬化型樹脂選擇性地硬 化的加熱手段27。加熱手段係配置於台座20的下方，在第 4圖例示將加熱手段的一態樣之雷射光源的情況。在本說 明書中「選擇性」係指已形成在可撓性薄膜上的熱硬化型 樹脂會加熱至發生硬化的程度，而不會加熱至電路圖案保 護材的防焊阻劑發生變質或變色的程度。防焊阻劑層的變 色會成爲外觀不良，而且依情況會有防焊阻劑層會劣化， ' 絕緣可靠性降低的疑慮。加熱手段不限定於該等物品，可 使用電熱線加熱器，亦可使用鹵素加熱器、紫外線燈等電 磁波。 φ 第5〜8圖顯示從電子構件24係在第一步驟中隔著熱硬化 型樹脂層6而與內導線精度良好地假壓著的狀態，到在第 二步驟中使接合完成的實施態樣。在以後的說明中上方 向、下方向爲圖中的箭頭方向。 • 因爲在第一步驟中電子構件與內導線被精度良好地對 . 位、假壓著，所以在第二步驟中便不需要對位機構。又， 一旦藉由台座20下的加熱手段從下側加熱，押附電子構件 24的工具便可省略加熱功能而只具有加壓功能。爲了抑制 -20- 201031297 朝加壓工具21側的熱傳導，使熱硬化型樹脂效率佳地升 溫，將絕熱、緩衝材22配置在加壓工具21之與電子構件 24的接觸面。 • 又，在同時接合複數個電子構件的情況下，爲了彌補電 . 子構件及內導線之高度參差不齊，使加壓工具的表面22具 有緩衝（cushion)性是有效的辦法。作爲具備絕熱性及緩 衝性的材料，可適用：把氟橡膠、玻璃織（glass cross)及 耐熱尼龍浸漬具有耐熱性的核（core)的氟橡膠、砂酮片、 〇 氟片、或是積層矽酮片及氟片的薄片。在第二步驟中，押 附電子構件24的加壓工具省略加熱功能而只具有加壓功 能，不須隔著該絕熱材來加熱電子構件及熱硬化型樹脂， 因此能抑制該絕熱材的熱劣化，使交換頻率縮小。 第5圖係爲了選擇性地加熱熱硬化型樹脂，而把具有與 電子構件約略同型的開口之加熱遮斷罩28插入在補強板 與加熱手段之間。藉此，由台座20下部的熱源30所產生 Q 的熱量只通過開口部，使熱硬化型樹脂硬化。作爲加熱遮 斷罩，能藉由將把熱反射至玻璃板的材料形成在前述開口 部以外的部分來製作》 又，亦可藉由在整面形成有反射材料的金屬板形成與電 - 子構件約略同型的貫通孔來製作加熱遮斷罩。又，加熱遮 . 斷罩亦可爲藉由吸收熱或電磁波而使其不會通過開口部以 外的部分者。加熱遮光罩亦可爲半透明，使其將整體可撓 性薄膜基板加熱至低於熱硬化型樹脂的硬化溫度，將電子 -21- 201031297 構件接合部分加熱至熱硬化型樹脂的硬化溫度以上。 針對台座20的材料，選擇效率佳地傳導或透過前述熱源 的材料是重要的。在使用電磁波產生源爲熱源的情況下， ' 較佳爲採用透過電磁波的無機玻璃及石英來作爲台座材 • 料。在使用紅外線產生源爲熱源的情況下，能採用透過紅 外線的矽。 針對加熱遮斷罩材的配置場所，雖然在第5圖爲位於台 0 座20與熱源30之間，但是可將加熱遮斷罩材配置在台座 20的上面29(a)，亦可將反射材料形成在台座20的背面 29(b)來作爲遮罩使用。又，亦可將加熱遮斷罩埋入台座 . 2〇的內部。一旦使台座20本身具有加熱遮斷罩功能，則可 能要依照每種產品種類來準備不同的台座20，有使得生產 性降低的疑慮。 第6圖係爲了選擇性地加熱熱硬化型樹脂而採用由雷射 31所產生的加熱之例子。作爲雷射，可舉出：固體雷射及 〇 氣體雷射、半導體雷射。就工業上便宜、小型的觀點，可 適合使用半導體雷射中，特別是頻率6 5 Onm的紅外線雷 射，及780nm、8 30nm的紅外線雷射。重要的是選擇熱硬化 型樹脂會吸收的波長區域的雷射波長。 • 爲了效率佳地加熱熱硬化型樹脂，考慮配置在雷射與熱 . 硬化型樹脂層之間的材料的透過率、及雷射與熱硬化型樹 脂層之間的距離，把雷射光的集光最適化。位於雷射與熱 硬化型樹脂之間的材料爲台座9、補強板、可撓性薄膜。 -22- 201031297 測定各材料的透過率，考慮雷射的集光透鏡的曲率，來決 定雷射的設置位置。 雷射的設置數量能藉由從一個雷射的輸出區域面積求得 • 須要的配置數量，使其在應加熱的範圍內效率佳地移動， . 來生產性高地使熱硬化型樹脂硬化。在同時接合複數個電 子構件的情況下，較佳爲設置同時接合的電子構件的個數 份量、雷射群。一旦可使雷射的配置位置移動，即使改變 秦 可撓性薄膜上熱硬化型樹脂的塗布位置，也能輕易對應， ❹ 是較佳的態樣。 第7圖顯示爲了選擇性地加熱熱硬化型樹脂，而使用燈 3 2爲加熱手段的情況之例子。作爲燈，能舉出鹵素燈、鹵 素壺加熱器、髙輝度LED燈、金屬鹵化物燈、高壓鈉燈、 水銀燈等。採用具有所使用之熱硬化型樹脂的吸收波長區 域的燈。 能藉由從燈32以導光路徑33來導光，從台座20的下側 〇 對已塗布在可撓性薄膜上的熱硬化型樹脂照射光，使其選 擇性地只加熱熱硬化型樹脂。導光路徑33雖然能合適使用 光纖，但是也可組合小型的鏡。亦可利用反射板及集光透 鏡等來使光集中，.而使其入射至光纖。又，亦可取代燈而 ' 使用經採用半導體雷射的光纖輸出型半導體雷射單元。於 - 本例情況下，重要的是以透光性材料來構成台座20。 第8圖顯示用以選擇性地加熱熱硬化型樹脂的其他態 樣。在台座20設置突起部34且在突起部設置加熱器35, -23- 201031297 加熱突起部34。該突起係配置成配合電子 位置。 第9、10圖顯示當加壓複數個電子構件 • 性樹脂時，具有對各個電子構件調整加壓 . 壓手段之裝置的例子。 第9圖顯示由對各個電子構件獨立的加 加壓手段。個別的加壓工具可獨立地調整 的平行度。又，個別的加壓工具能各自地 φ 因此，能藉由規定電子構件加壓時的押入 每個電子構件調整接合時的加壓量。 被接合的電子構件的凸塊高度有未被製 情況，甚至有加上可撓性薄膜基板的配線 ' 板厚度不均的情況，即使在同時加壓的情 未被充分加壓的電子構件。因此，即使在 的情況下，亦能藉由將加壓工具設置在每 φ 而確實地接合全部的電子構件。 第10圖亦係同樣顯示用以同時接合高 電子構件的加壓手段之其他實施形態者。 37放置在臂25與電子構件之間，可對電子 • 加壓量及/或平行度的調整。先在緩衝袋體 . 體38。已配置高度不同的複數個電子構件 板的表面爲凹凸。但是，緩衝袋體能順著 形，而對已接觸的電子構件施加幾乎相等 構件被假壓著的 同時加熱熱硬化 量及平行度的加 壓工具所構成的 電子構件對台座 調整押入壓力。 壓力上限，來對 造成全部等高的 厚度不均、補強 況下，也會產生 有上述參差不齊 一個電子構件， 度不同的複數個 藉由將緩衝袋體 構件個別地進行 之中裝滿油等液 之可撓性薄膜基 該凹凸而表面變 的壓力。 -24- 201031297 又，能加熱緩衝袋體中的液體’協助在第二步驟之熱硬 化型樹脂的硬化。再者’一旦使緩衝袋體的液體在外部的 冷卻、加熱裝置之間循環，以使緩衝袋體中的液體保持爲 . 一定的溫度，則第二步驟之接合溫度條件便不會隨裝置稼 . 動時間及接合的時間循環改變而爲固體，所以較佳。 實施例 以下，雖然舉出實施例進一步具體說明本發明，但是本 發明並不限定於該等實施例。又，以下列2項目來作爲由 〇 本發明之二步驟熱碛化型樹脂所形成之接合的評價項目： 能獲取電子構件之全部凸塊與全部內導線的導通，及在熱 硬化型樹脂內沒有接觸內導線之空隙（void)及龜裂等性 能惡化。又，作爲接合後之防焊阻劑的評價項目係根據外 ' 觀檢查來判斷有無變色。 (實施例 1)準備厚度 38//m之長尺聚醯亞胺膜 (「Kapton」150EN (商品名）東麗杜邦（股）製）來作爲 φ 可撓性薄膜。利用對應長尺薄膜的輥對輥方式之濺鍍裝 置，依序積層厚度150nm的鉻：鎳= 20: 80(重量比）的 合金膜、及厚度1200nm的銅膜。 利用模塗布機（die coater)，在屬於補強板之厚度1.1 • 画、370x470 mm的鹼石灰玻璃上塗布以100:3 (重量比） , 來混合紫外線硬化型黏著劑「SK Dyne」SW-1 1 A (綜硏化 學（股）製）與硬化劑L45 (綜硏化學（股）製）者，以 80°C乾燥2分鐘，製得可剝離的有機物層》使乾燥後的可 -25- 201031297 剝離的有機物層厚度成爲3/zm。接著將空氣隔絕用膜（在 聚酯膜上設置容易脫模的矽酮樹脂層的薄膜）貼附在有機 物層而放置1星期。 • 把已設置金屬層之前述聚醯亞胺膜切割成370x470讓》 把玻璃上的空氣隔絕用膜剝離後，利用能以不會對薄膜施 加應力的方式進行貼附的積層裝置（未圖示），來將已設 置金屬層之聚醯亞胺膜貼附至可剝離的有機物層》之後， 從玻璃基板側照射1000mjr/cm 2紫外線，硬化有機物層。 ◎ 利用狹縫模塗布機（slit die coater)來將正型光阻塗布 至銅膜上，以80°C乾燥10分鐘。隔著光罩把光阻曝光、顯 影，在不要鍍膜的部分形成厚度12/zm的光阻層。 使用以形成電路圖案的光罩圖案成爲以下所示的形狀。 • 在19.3 nun x2.5 mm長方形的二個長邊上，以25;/m間距，每 邊排列772個配線（寬度10 ju m、長度5 nun )來作爲內導 線。以使中心與上述19.3腿x2.5 mm長方形相同、最外端接 φ 觸38.6 mm x23.75 mm長方形的二個長邊的方式，以50 e m間 距，每邊排列772個配線（寬度25从m、長度100 μ m)來 作爲外導線（outer lead)。 把以寬度l〇ym的配線、以一對一的方式連結內導線與 . 外導線當作1單元。在玻璃基板的370 mm長度方向上從中 . 心開始等距配置該單元，以40.6腿間距配置8列。在玻璃 基板的470 mm長度方向上從中心開始等距配置，以24.0 mm 間距配置18個。使得在該可撓性薄膜基板構裝8列xl8行 -26- 201031297 之144個1C晶片。 接著，以上述銅膜作爲電極，藉由在硫酸銅鍍覆液中的 電解電鍍來形成厚度8vm的銅層。以光阻剝離液剝離光 • 阻，接著，以由過氧化氫-硫酸系水溶液所形成的軟性蝕刻 • 劑（soft etchant)來除去位於阻劑層之下的銅膜及鉻-鎳合 金膜。接下來，在鍍銅膜上，以電解電鍍形成厚度0.4 的錫層，製得電路圖案。之後，爲了保護電路圖案，以網 版印刷機將防焊阻劑NPR-3300NH(日本PolyTech(股）製） 形成至電路圖案上。以烤箱在120°C下進行熟化90分鐘 (cure )，在電路圖案上製得10/im厚度的防焊阻劑層。 利用測長機DR-800 (大日本SCREEN (股）製），針對 聚酿亞胺膜上的單元，測定最外端內導線之寬度方向中心 ' 間距離（設計値19.3腿），在全部單元中，其結果皆落在 設計値±1从m(0.00 5%)的範圍內，位置精度非常良好。 以 Namics 製 NCP 樹脂之 8364-160 (Tg: 120°C、硬化溫 φ 度：200°C ( 5秒））作爲熱硬化型樹脂，使用武藏Engineering 製分配器裝置FAD-320S塗布至電路圖案的內導線部內側 後，以80°C、30秒的條件在烘烤爐使其半硬化。 接著，以1C接合裝置FC-2000 (東麗Engineering (股） • 製，加熱、加壓工具爲1個）來進行第一步驟以把作爲電 . 子構件之20.0 mm x3.0 mm之矽1C晶片加以定位。利用由多 孔質陶瓷所構成的加熱、加壓工具來把持1C晶片，藉由陶 瓷加熱器來使加熱、加壓工具加熱而抵接至NCP樹脂。把 -27- 201031297 承載可撓性薄膜基板的台座溫度設定爲100 °c。作爲 FC-2 00 0的設定條件，設定溫度設爲120°C ,加熱、加壓工 具之按押壓力設爲5kg/晶片（3.2g/凸塊），加熱、加壓時 間設爲1.0秒（包含晶片的搬送、對位的話爲3.0秒）。於 此情況下，每一片可撓性薄膜基板的作業時間爲432秒。 接下來，利用第3圖所示之IR黏合機（IR bonder )進行 第二步驟。加壓工具係以同時按押1列8個1C晶片的方式 來將與1C晶片的接觸面積設爲360 mm x4腿。加熱係以從補 強板側藉由近紅外線照射機構來使NCP部分成爲200°C的 方式設定輸出。加壓工具係以15kg/晶片（9.7 g/凸塊）的荷 重抵接5秒。因爲壓著後的基板搬送需要2秒，所以每一 片可撓性薄膜基板的作業時間爲1 8列X ( 5 + 2 )秒的1 26 秒。 藉此，每一片可撓性薄膜基板的1C晶片構裝時間爲558 秒，變成相對於比較例1 ( 1個加熱、加壓工具的情況）之 作業時間1008秒的55.3%，縮短了 44.7%。 接著，調査因1C凸塊與內導線的位置偏移所造成的導通 不良數量、及熱硬化型樹脂的硬化狀況。 針對已接合的10片可撓性薄膜基板之14 40個1C進行開 路-短路（open-short)檢查’從發生開路不良的電路圖案 之可撓性薄膜面觀察1C凸塊與內導線的位置偏移。依該結 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離1 〇片可撓性薄膜基板’從可撓性薄膜側 -28- 201031297 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。然而’在已接合至可 撓性薄膜基板的ic周邊’有防焊阻劑的近黑變色，外觀檢 • 查爲不良。 . (實施例2)與實施例1同樣地準備可撓性薄膜基板。 除了第二步驟的加熱、加壓手段爲在與1C晶片的接觸面積 360 mm x2 mm、以24 mm間距平行地排列2列，2列同時地將 8個/列1C同時地進行加熱、加壓以外，與實施例1同樣地 〇 構裝1C晶片。 在第一步驟之每一片可撓性薄膜基板的作業時間爲432 秒。在第二步驟，每一片可撓性薄膜基板的作業時間爲9 行x(5+2)秒之63秒。 ' 藉此，每一片可撓性薄膜基板的1C晶片構裝時間爲495 秒，變成相對於比較例1 ( 1個加熱、加壓工具的情況）之 作業時間1 008秒的49.1%，縮短了 50.9%。 Q 接著，調查因電子構件的凸塊與內導線的位置偏移所造 成的導通不良數量、及熱硬化型樹脂的硬化狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢查，從發生開路不良的電路圖案之可撓性 • 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 . 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離1 〇個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂•在全部的可撓性薄膜基板未發現內導 -29- 201031297 線周邊的空隙、龜裂之不良狀況。然而’在已接合至可撓 性薄膜基板的ic周邊’有防焊阻劑的近黑變色’外觀檢查 爲不良。 . (實施例3)除了把在第一步驟所使用的1C接合裝置 . FC-2000的加熱、加壓工具設爲2個以外’使實施例1同樣 地構裝1C晶片。將FC-2000改造如下：配置2個加熱、加 壓工具，以使兩者的加熱、加壓工具不會干涉的方式來設 定程式（programming) *效率良好地從專用盤取出電子構 〇 ^ 件、進行定位。 在第一步驟之每一片可撓性薄膜基板的作業時間爲216 秒。在第二步驟，每一片可撓性薄膜基板的作業時間爲18 行x(5+2)秒之126秒。藉此，每一片可撓性薄膜基板的 _ 1C晶片構裝時間爲342秒，變成相對於比較例2( 2個加熱、 加壓工具的情況）之作業時間504秒的67.9%，縮短了 32.1 %。 Q 接著，調查因電子構件的凸塊與內導線的位置偏.移所造 成的導通不良數量及熱硬化型樹脂的硬化狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢查，從發生開路不良的電路圖案之可撓性 • 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 . 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 -30- 201031297 導線周邊的空隙、龜裂之不良狀況。然而，在已接合至可 撓性薄膜基板的ic周邊，有防焊阻劑的近黒變色，外觀檢 査爲不良。 • (實施例4)除了把在第一步驟所使用之1C接合裝置 . FC-2000的加熱、加壓工具定爲2個，第二步驟的加熱、加 壓手段爲在與1C晶片的接觸面積360 mm x2刪、以24 mm間 距平行地排列2列，2列同時地將8個/列1C晶片同時地進 ©行加熱、加壓以外，與實施例1同樣地構裝1C晶片。 在第一步驟之每一片可撓性薄膜基板的作業時間爲216 秒。在第二步驟，每一片可撓性薄膜基板的作業時間爲9 行X ( 5 + 2)秒之63秒。 藉此，每一片可撓性薄膜基板的1C晶片構裝時間爲279 " 秒，變成相對於比較例2 ( 2個加熱、加壓工具的情況）之 作業時間504秒的55.4%，縮短了 44.6% » 接著，調查因電子構件的凸塊與內導線的位置偏移所造 Q 成的導通不良數量、熱硬化型樹脂的硬化狀況。針對已接 合的10片可撓性薄膜基板之1440個電子構件進行開路-短 路檢査，從發生開路不良的電路圖案之可撓性薄膜面觀察 電子構件的凸塊與內導線的位置偏移。依該結果，沒有因 • 兩者之大的位置偏移而發生開路不良者。 . 又，從玻璃剝離10個可撓性薄膜基板’從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板’未發現內 導線周邊的空隙、龜裂之不良狀況。然而’在已接合至可 -31 - 201031297 撓性薄膜基板的ic周邊，有防焊阻劑的近黑變色，外觀檢 查爲不良。 (比較例1)如同實施例1，準備可撓性薄膜基板，如同 • 實施例1以分配器把NCP樹脂8463- 160塗布至1C晶片構 . 裝區域而形成。接著，以1C接合裝置FC-2000 (東麗[Technical Field] The present invention relates to the high-precision of an electric circuit pattern associated with weight reduction and miniaturization of an electronic product, and the electronic member is joined to each other via a thermosetting resin. A bonding method and a bonding apparatus of a flexible film substrate that has been bonded to a reinforcing plate. Examples of the application product of the present invention include a MEMS, an image sensor, and the like in addition to the COF to be described later. I. [Prior Art] With the reduction in weight and size of electronic products, fine pitch (high precision) of patterning of printed circuit boards has been pursued. In particular, the COF (Chip On Film) technology used for bonding electronic components (for example, IC (Integrated Circuit)) to a liquid crystal display panel can process long-length polyimine in a reel to reel manner. The thin film substrate simultaneously obtains a fine pattern, but progress on the miniaturization is gradually approaching the limit. As a method for further miniaturization, it has been proposed to form a very fine circuit pattern on a flexible film which is attached to a reinforcing plate with a peelable adhesive agent (for example, Patent Document 1). In the case of an existing roll-to-roll type device, the flexible film substrate is peeled off from the reinforcing plate after the circuit pattern is formed, and the short-side end portion is joined to the substrate to form a long-length film substrate (for example, Refer to Patent Document 2). As a result, the flexible film - the size changes due to temperature and humidity, and the requirement for fine pitching is expected to be 1C bonded before peeling from the reinforcing plate. In the flexible film substrate, the gold bumps on the 1C side and the circuit pattern in the mounting region of the flexible film substrate 201031297, that is, the inner lead are bonded by heat pressing. Once hot pressed, the tin formed on the surface of the inner conductor by the plating method and the gold on the surface of the bump are eutectic bonded. Once the inner guide 'line forms a fine pitch, the tin on the inner wire surface will flow on the inner wire surface and inside, and the wire end will flow to form a tumor shape, which will be the reason for the short circuit of the adjacent inner wire. Therefore, although the thickness of tin can be thinned to avoid short-circuiting of the inner conductor, the formation of the gold-tin eutectic becomes uneven due to the reduction in the absolute amount of tin which contributes to bonding and the accumulation area on the inner conductor. The joint strength will be insufficient. Although there is a corresponding method for increasing the bonding load in order to uniformly form the gold-tin eutectic, there is a problem that the bump is collapsed due to excessive load, and there are many problems in the filming of tin. Therefore, a technique of joining a flexible film substrate and an IC through a material called ACF (Anisotropic Conductive Film), NCP (Non Conductive Paste), and NCF (Non-Conductive Film) is being reviewed. ACF is a method in which 1C and a flexible film substrate Q are bonded by conductive particles in a film. For example, there has been proposed a technique of joining 1C to a wiring pattern formed on a glass plate using ACF (refer to Patent Document 3). In the bonding using ACF, the presence of conductive particles between the bump and the inner conductor ensures that both are conductive. However, once the distance between the inner conductors is reduced by the fine pitch, the conductive particles will come into contact with the adjacent inner conductors, so that there is a concern that the wiring short-circuit is defective. Therefore, applying ACF is applied. In the case of bonding bumps of fine electronic components and fine circuit patterns, it is necessary to reduce the diameter of conductive particles in the ACF film. However, 201031297, it is difficult to reduce the diameter of the conductive particles in the ACF film from the viewpoint of the stability and uniform dispersion of the metal particle diameter, and since the number of conductive particles between the inner wires is increased, the resistance between the inner wires is increased. Migration - reduced, reducing reliability. . Therefore, for bonding materials suitable for fine pitch mounting, it is preferred to use NCP and NCF without conductive materials. NCP and NCF are formed by forming a thermosetting resin into a paste or a film, and are formed between the electronic component and the circuit pattern, and after bonding the electronic component, the resin is cured and bonded. The bumps are more strongly bonded to the inner wires by hardening and shrinking of the resin. Further, compared to the bonding of the gold-tin eutectic, the bonding can be performed at a low temperature, and the device load is also small. However, when the pressure is applied, the positional deviation is increased by the sliding of both the 1C bump and the inner conductor, and there is a possibility that the conduction is poor. On the other hand, the hardening of the thermosetting resin can be performed by heating the 1C heater and heating the electromagnetic waves from the circuit pattern side (for example, refer to Patent Document 3). Generally, a resin layer (referred to as a solder resist layer) other than the thermosetting resin layer for constitution is formed on the circuit pattern formed on the flexible film. The heat-curable resin immediately below 1C is considered to have a heat release rate of 1C and a pressurizing tool that attaches 1C to the flexible film substrate, and supplies heat having a higher curing temperature than the heat-curable resin. • The solder resist resin is usually heat-resistant at 230 ° C to 260 ° C and hardens the thermosetting resin such as NCP and NCF at a temperature of 200 ° C to 250 ° C. That is, once the above heat release is considered, the necessary temperature for hardening becomes higher than the heat resistant temperature of the solder resist. Therefore, when the flexible film substrate is heated from the 201031297 reinforcing plate side by, for example, electromagnetic wave heating, the solder resist is discolored due to heating at a heat resistance temperature or higher, and appearance or performance is caused. The problem. • Previous technical literature. CITATION LIST Patent Literature PATENT DOCUMENT 1: JP-A-2003-298 No. 1 pp. It is difficult to bond the 1C and the thin film circuit substrate well at a fine pitch. In particular, when a thermosetting resin is used, once it is pressed in only one step, the possibility of slippage between the 1C bump and the inner conductor is particularly high. Further, since the thermosetting resin must be hardened as compared with the metal joining, the joining time is long, and there is a problem that so-called productivity is lowered. Further, the flexible film substrate in which the circuit pattern is formed on the flexible film is bonded to the reinforcing plate in a state in which the circuit pattern and the electronic member are crimped via a thermosetting resin, once The stage of the flexible film substrate on which the reinforcing plate is placed is heated to the thermosetting resin. The heat resistance temperature of the solder resist layer of the protective film on the circuit diagram is lower than the heating temperature. The discoloration of the solder resist layer is caused. This discoloration may cause an appearance defect. In addition, the solder resist layer may be deteriorated depending on the case, and there is a concern that the insulation reliability is low. 201031297 A means for solving the problem is that the present invention relates to a method of joining an electronic component and a flexible film substrate, wherein the electronic component is bonded to the bonded flexible film via a reinforcing plate and a peelable organic layer. The bonding method of the flexible film substrate is characterized in that after the thermosetting resin layer is formed on the flexible film substrate, the method has the following steps: (n the first step is to press the electronic member to form the flexible layer. The thermosetting resin on the film substrate is heated in this state to a bonding position where the electronic member is placed on the flexible film substrate at a temperature lower than the curing temperature; and (2) the second step' When a load is applied to an electronic component, the bonding position of the thermosetting resin is heated to a curing temperature or higher to bond the electronic component. Further, a particularly preferred aspect of the present invention is the bonding method of the first aspect of the patent application, wherein The second step has the following process: selectively heating the aforementioned thermosetting inert resin layer from the bonding position of the electronic member to the hard under the flexible film substrate Further, another aspect of the present invention is a bonding apparatus for bonding an electronic component to a flexible film having a plurality of regions in which a solder resist has been formed and a region in which a thermosetting resin has been formed. a substrate having a pedestal for holding the flexible film substrate, and a pressing means for attaching the electronic component to a position above the pedestal holding the flexible film substrate The flexible film substrate and the heating means are disposed below the position 201031297 where the flexible film substrate is held by the pedestal, and selectively heat the region to which the thermosetting resin has been applied. According to the invention, it is possible to provide a stable bonding method in which the position of the electronic component and the circuit pattern is small when the crimping is performed. Further, according to a particularly preferred aspect of the present invention, the solder resist formed on the flexible film substrate can be bonded to the electronic member and the flexible film substrate without being damaged by heat. EMBODIMENT ❹ The joining method and the joining device of the present invention will be described in detail below. First, the flexible film substrate 100 attached to the reinforcing plate will be described using Fig. 1 . The peelable organic layer 2 is formed on a single sheet of reinforcing plate 3, and the flexible film 1 is bonded to the organic layer 2 by using a laminate device. As the reinforcing plate 3', it is preferable to efficiently transfer heat applied to the thermosetting resin (for bonding with the electronic member), soda lime ❸ glass, borosilicate glass, quartz can be used. Inorganic glass such as glass. It is preferably transparent to electromagnetic waves. This is because electromagnetic waves can also be used as a heating means. In the case where infrared rays are used as a heat source, the crucible is also permeable and can be used for a reinforcing plate. Further, as the peelable organic layer 2, for example, a re-peeling type adhesive called acrylic or urethane is used. - The erasable film 1 is formed by sputtering and vacuum evaporation to form a gold oxide half field effect transistor on one side of the insulating film. As the material of the insulating film, polycarbonate, polyether sulfur, and polycarbonate 201031297 can be used. Polyurethane film #, edge poly copper ^ sulfur Absolutely M benzene gold-shaped M poly-bonded B5, the bottom chromium member ester. With the nickel layer #二膜高之金W 乙薄提合 S acid gel to form chrome f plastic molding nickel 12, etc., the naphthalene layer is plated in a small-ply-spray 値 poly-polymer to plate The resistance, the crystal setting, and the electroplating ester liquid are set as follows. Membrane ethylamine also. The bismuth film of the bismuth bismuth is characterized by the fact that it is a densely bonded aniline gold which is sufficiently strong for the adhesion of the mesogenic amine to the copper plating used to form the circuit pattern 4. © Next, a circuit pattern 4 is formed on the flexible film that has been bonded to the reinforcing plate. The circuit pattern 4 is usually formed by using a copper as a main body by a subtractive method, a semi-additive method, or the like. In terms of fine pitch, a semi-additive method is suitable. The semi-addition method is usually in the following order. After the photoresist pattern is formed in a place where the conductor pattern of the circuit pattern is not formed, the copper film is deposited by electrolytic copper plating in a place where no photoresist pattern is present. Thereafter, after the photoresist pattern is removed, the metal film previously formed with the photoresist pattern portion is removed by etching. Thereafter, a protective layer as a portion formed by the Φ conductor is formed. The protective layer is formed by depositing tin plating, gold plating, or the like, and adsorbing the rust preventive agent on the copper surface. Therefore, the conductor portion of the circuit pattern 4 is formed by a metal film, a copper film produced by plating, and a protective layer. These structures are also referred to as "metal layers". In the present specification, the circuit pattern 4 is regarded as a region including a metal layer having such a configuration. The domain is explained. However, it is of course possible to suitably adopt a constitution other than the gold layer. The circuit pattern includes: a mounting region for arranging the electronic component, a fan out -10-201031297 region, a test pad region, and the like. Most of the constituent regions are formed in parallel with a plurality of circuit patterns (referred to as internal wires in the case of COF) in which they are bonded to the bonding bumps of the electronic component. Since the number of output inputs increases as the function of the electronic components increases, the inner conductor width becomes thinner than 10 V and is adjacent. The inner wire spacing is also narrowed to 10 Vm. After the circuit pattern 4 is formed, a solder resist film 5 for protecting the metal layer is formed on the circuit pattern 4, whereby the flexible film substrate 100 bonded to the reinforcing plate is obtained. Next, a thermosetting resin 6 for bonding the electronic component and the inner conductor is coated on the flexible film substrate. As a composition of the thermosetting resin, an epoxy resin, a polyamide amide resin, a polyimide resin, a polyurethane resin, a phenol resin, a melamine resin, an unsaturated polyester resin, or the like can be suitably used. As a main agent, a hardener for promoting a hardening reaction is added. The hardening agent can be used with a resin having a high reactivity with the main component, and an epoxy resin is often used. In terms of process simplicity, it is preferred to use a one-liquidity in which a curing agent is previously mixed with a main agent, but a two-liquidity which is used by kneading a main agent and a curing agent before application can also be used. In order to form a thermosetting resin layer in the electronic component mounting portion, a dispenser and printing can be used as the coating method. The printing method is preferable from the viewpoint that the thermosetting resin layer 6 can be formed in a plurality of circuit patterns at a time and productivity is high. In the case of the printing method, in order to maintain the printed shape of the coated thermosetting resin and to prevent the foreign matter from adhering to the surface of the thermosetting resin before bonding of the electronic member, it is preferable to use a thermosetting resin. The solvent is evaporated by drying for a short time below the hardening point temperature. In addition, when a thermosetting resin having a void existing in the vicinity of the inner conductor and the bump of the electronic member after the electronic component is joined, the connection reliability and the insulation reliability are lowered. With dispensers and printing methods. Most of the formed thermosetting resins are those having a high viscosity, and the fluidity is relatively small. Because of . Therefore, when the inner lead is narrow, there is a concern that a void is generated. In order to avoid voids, it is preferred to heat the flexible film substrate so as to improve the fluidity of the thermosetting resin. Specifically, when the electronic component is joined, the coated thermosetting resin layer can be heated by heating the pedestal carrying the flexible thin film substrate. The range of the heating temperature is sufficient as long as it is a temperature at which the fluidity of the resin can be obtained, and on the other hand, it is set to be lower than the curing temperature. For example, in the case of using a thermosetting tree resin of 8364-160 (Tg: 120 °C, hardening temperature: 200 °C) manufactured by Namics, the heating temperature is preferably about 100 °C. Further, the moisture in the flexible film substrate is also one of the causes of voids in the thermosetting resin. Preferably, the flexible film substrate is heated to remove moisture in the flexible film substrate before the electronic member is brought into contact with the thermosetting resin. The heating temperature is sufficient to remove moisture in the flexible film substrate, and it is preferably 80 ° C to 130 ° C. In the case where the thermosetting resin layer has been applied, the heating temperature is set lower than the curing temperature β of the thermosetting resin. • The heating time for avoiding voids is set to sufficiently remove the flexibility of the thin film. time. Further, it is also possible to carry out heating for removing moisture in the flexible film substrate by applying the thermosetting resin. In this case, the heating conditions can be determined irrespective of the curing temperature of the thermosetting resin. However, -12-201031297 is, after heating and drying, since the flexible film absorbs moisture during the waiting before the first step, it is preferable to take the following measures: set the waiting time' and keep the stored gas atmosphere at a low humidity. . • The joining method for the first step of the present invention will be described with reference to FIG. Bright. Fig. 2 shows the first step of attaching the electronic member at a lower temperature than the hardening temperature of the thermosetting resin. Here, the curing temperature means a temperature at which a resin functional group is bonded, and 85% or more of the components contributing to the reaction are reacted (the degree of hardening is 85% or more). The degree of hardening of the thermosetting resin can be quantitatively determined by, for example, FT-IR (Fourier Transform Infrared Spectrometer) analysis, by the ratio of the peak intensity of the reactive group contributing to the bonding. In the case of a bisphenol type epoxy resin, an epoxy group consumed before and after hardening is used. On the other hand, since the ratio of the benzene ring is not changed, the ratio of the peak intensity from the epoxy group to the peak intensity from the benzene ring is reduced by 85% or more after hardening, so that the degree of hardening is 85% or more.固定 Fix the flexible film substrate that has been bonded to the reinforcing plate 3 to the pedestal 9. The fixing method is suitable for use with vacuum suction generated by the pedestal 9. Further, the end portion of the flexible film substrate together with the reinforcing plate may be mechanically held by a chuck. As described above, in order to improve the fluidity of the thermosetting resin and prevent voids from occurring in the thermosetting resin, it is preferred to heat the substrate first. - The heating and pressing tool 8 is preferably a person having a suction mechanism. This is because the electronic member can be easily sucked and held by opening a fine hole in the contact surface between the porous ceramic and the electronic member. In addition to the heating and pressurizing tool 8, -13-201031297, a tool for moving the electronic component in the structure area of the circuit pattern is prepared. Next, the electronic component 7 is falsely pressed against the inner lead portion. The purpose of this first step is to align the electronic components with high precision so as to be fixed to the extent that the position/offset does not occur in subsequent processes. Examples of the electronic component include an electronic component such as 1C and a capacitor, a resistor, and a resistor. In the electronic components, the bonding bumps and pads are provided on the bonding surface of the electronic component. The heating and pressurizing tool 8 sucks one electronic component 7 from a storage tray (not shown) of an electronic component set in the apparatus. The CCD camera 10 is used to read the electronic component (not shown) and the pedestal 9 from the electronic component 7 side of the heating and pressurizing tool 8 and has been formed on the inner circumference of the circuit pattern. Alignment mark (not shown). The position control controller 1 1 of the heating and pressurizing tool 8 calculates the position shift amount of the two alignment 'marks, and adjusts the position of the heating and pressurizing tool 8 in order to correct the position shift amount. Thereafter, the heating and pressurizing tool 8 is lowered to push the sucked electronic member toward the inner lead. In this case, the thermosetting resin can be heated to a temperature lower than the curing temperature in a state where the electronic crucible member is biased toward the inner conductor, and the thermosetting resin is hardened to some extent to be falsely pressed. The position of the electronic component with good precision alignment is shifted when it is handled before the subsequent process. • At the time of joining, at least the thermosetting resin in the construction area is heated. Although the pseudo pressing of the first step can be carried out while absorbing a plurality of electronic components on one head, it is preferable to perform false pressing one by one in order to achieve high-precision bonding. -14- 201031297 As a first step, the thermosetting resin is sandwiched, and the attachment pressure in the second step can be reduced by bringing the distance between the bump of the electronic component and the wire inside the circuit pattern. In the second step, the bumps of the electronic component may become difficult to slide on the inner conductor, and there is an effect that the joint offset is hard to occur. . In the past, only the first step was performed to harden the thermosetting resin to bond the electronic member, and the thermosetting resin was hardened at the time of curing, and the positional deviation was likely to occur. The present invention divides the bonding step into two. And can avoid the problem of positional offset. Further, by dividing the joining step into two, it is possible to reduce the false pressing temperature in the first step, and to easily perform the high-precision alignment and the heat conduction prevention measures of the bonding apparatus in the first step or the heat radiation countermeasure. In order to improve the fluidity of the thermosetting resin, the heating temperature in the first step is preferably as high as possible in a range lower than the curing temperature of the thermosetting resin. However, it was confirmed that the thermosetting resin did not deteriorate in performance and set the heating temperature. The thermosetting resin can be heated by the heating and pressing tool 8 via the electronic member.加 A heating and pressurizing tool 8 having a heating mechanism and a absorbing mechanism for the electronic member can be obtained by using a porous ceramic in the heating and pressurizing tool 8 and a built-in ceramic heater. The pressure at which the electronic component is attached to the inner conductor is determined by considering the load applied in the second step. In the first step, the electronic component 7 is made to be accurate. Fix it properly and apply a little weak pressure. Also in the second step, a slight pressure is applied in order to engage the inner wire with the electronic member 7 without being displaced. As in the past, only the first step of heating and pressurizing system -15-201031297 often uses 15~30gf/(1 electronic component bump). However, in accordance with the present invention, the first step is preferably about 3 to 10 gf / (1 electronic component bump). Further, in the present invention, after the first step, the thermosetting resin is present between the electronic component and the inner lead, and there is often a case where it is not turned on. . In the first step, the heating and pressurization time is set in such a manner that the electronic component and the circuit pattern can be stably aligned and can maintain accuracy before the subsequent process. Also according to the heating rate of the heater and the temperature stability, preferably 0. 3 seconds to 3 seconds, especially good 0. 5 seconds to 1 second.其 The other two steps of dividing the joining of the electronic components into the first and second steps are to improve productivity. The bonding time with the metal formed by the current mainstream gold-tin eutectic or the like is about 0. 1 ~ 1. The thermosetting resin for bonding the electronic member has a heat hardening time of 5 seconds to several tens of seconds as compared with 5 seconds. Therefore, once the electronic components are heated and pressurized one by one, the production efficiency is low. However, by using a large-area flexible film substrate having a plurality of circuit patterns, a plurality of electronic members are simultaneously hardened by a thermosetting resin, and φ can improve productivity, even if a thermosetting resin having a long bonding time is used. It also maintains production efficiency. According to a preferred embodiment of the present invention, when the electronic component is bonded to the flexible film substrate, the flexible film substrate is heated from the reinforcing plate side. When the thermosetting resin is cured, it is possible to separate the hardening mechanism by a mechanism for attaching the electric member and heating the thermosetting resin. Significantly reduce the burden on the design of the device. That is, simplification of the equipment configuration can reduce equipment costs. When the device for joining a plurality of electronic components is simultaneously performed, the effect of separating the mechanism is particularly large. • 16- 201031297 Next, an example of a suitable aspect of the second step will be described with reference to FIG. Figure (a) is a front view of the device, and Figure 3 (b) shows the side of the device. In Figure 3, the flexible film substrate of the reinforcing plate 3 having the electronic component placed in the first step is shown. 100, move to use for the first. The state behind the pedestal 20 . Of course, the second step can also be performed on the pedestal 9 of Figure 2. In the state in which the flexible film substrate 100 of the reinforced plate 3 is sucked and held by the pedestal 9 of FIG. 2, the second pressurizing tool 21 may be moved. The flexible film substrate 100 of the reinforcing ◎ is attached to the pedestal 9 and moved to the lower portion used by the tool 21 of the second step. Although Fig. 3 shows the formation of the joining device of the second step of the present invention, the joining device of the present invention is not limited thereto. The apparatus of the present invention has a pedestal 20 for holding the flexible film substrate 100 attached to the reinforcing plate 3, and a pressurizing tool 21 for attaching an electronic component that has been disposed on the flexible substrate. φ is not particularly limited to the surface below the pressing tool opposite to the electronic component, as long as it is a normal attachment of the electronic component. It is preferably larger than the area of the electronic component. However, even if it is smaller than the area on the upper surface of the electronic component, it is possible to reliably attach the electronic component to the flexible film substrate uniformly. Further, in the case where a plurality of electronic components are attached at the same time, it is preferable that the tool has an area in which all of the aforementioned electronic components can be attached. In order to join a plurality of electronic components efficiently, the flexible film substrate is preferably shown in Fig. 3. Attached to the two-step advance attaching step board 3 Pressurized body-bonding thin film product, above, only the electric charge rate is more -17- 201031297 Road patterns are formed into an array, while joining each column or each row Electronic components. In addition, "the simultaneous attachment of a plurality of electronic components" or "the simultaneous joining of a plurality of electronic components" means a large-sized pressing tool using a plurality of electronic components capable of being attached to the body as described above. Electronic components. Attached and bonded to a flexible thin film circuit board. Therefore, the method further includes: when a plurality of electronic components that are targeted for the body are attached to the flexible film circuit substrate by using a plurality of pressing tools corresponding to the respective electronic components, the pressing action of each of the pressing tools is simultaneously performed . In other words, when a plurality of pressing tools are used, the pressing operation may be varied as long as it does not affect the predetermined tact time. Further, "forming the circuit pattern in an array" means that the electronic component disposed on the flexible film substrate is straight within the range of the width of the pressing tool. The line is adjacent to the state in which it is formed. The purpose is to simultaneously engage a plurality of electronic components by one-time pressurization with a pressurizing tool. Therefore, the arrangement of the electronic components which have been arranged in an array shape can be constituted not only by a plurality of columns or rows but also by a single column or row. Further, when the electronic components are arranged in a single column or row, they may also be referred to as "arranged in a column shape". When a plurality of electronic components are simultaneously pressed, the load is obtained by multiplying the pressure of an average of one electronic component by the number of electronic components. • The pressurizing tool 21 is provided with a heat insulating and cushioning material 22 at the front end. Also, pressurization. The tool 21 is fixed to a post 23 that is fixed to an air-driven pressurizing device (not shown). By the action of the pressurizing device, the support post 23 is moved downward, and the pressurizing tool abuts against the electronic member 24 and can be pressurized. The pillars 23 and the like, -18- 201031297 are supported by the arms 25 above the pedestal 20. The arm 25 is further secured to the device frame. With respect to the concavo-convex shape under the pressing tool, once the portion facing the electronic member has a convex shape, the electronic member can be more reliably attached to the flexible thin. Membrane substrate. However, from the following two viewpoints, it is preferably flat, (1) the cushioning material and the heat-resistant material attached to the underside of the pressing tool are easily attached and easily replaced; (2) even in the case of the electronic component to the flexible film substrate In the case where the joint position is changed, it is not necessary to change the pressurizing tool. As means for heating the thermosetting resin, a heating means can be placed in the pressurizing means, a means for heating from the pedestal side, and a combination of the two can be mentioned. One of the preferred aspects of the present invention is as described above, and the flexible film substrate can be heated from the side of the reinforcing plate (i.e., the side of the pedestal) in the second step. In the case where the pressurizing tool is not heated, it is preferable to provide the cooling mechanism to the pressurizing tool so that the joining temperature condition of the second step can be changed without changing the time of the device and the time cycle of the joining. fixed. φ In the case where the pressurizing tool 21 does not have a heating means and the heat source is disposed on the upper portion of the pedestal 20, in order to uniformly heat the thermosetting resin of the mounting region mounting region, it is necessary to interfere with the pressurizing tool 2 1 The manner of the action places the heat source around the circumference of the pressurizing tool 21. However, such a configuration ensures the arrangement of the heat source due to the charge, and simultaneously occludes the heat source toward the drive mechanism. And the countermeasures for the heat conduction of the positioning mechanism make the device complicated, which is not good. The joining device of Fig. 3 has a heating means composed of electromagnetic waves for curing the thermosetting resin. The heating means is disposed on the lower side of the pedestal 20 - 201031297. 12 is an electromagnetic wave generating source, 13 is a reflecting plate for directing electromagnetic waves toward the thermosetting resin, 14 is a backup block, 15 is an electromagnetic wave generating controller, 16 is a heat exchanger, and 17 is an electromagnetic wave. Heating means are not limited. • For these items, use a heater or a halogen. Electromagnetic waves such as ultraviolet light and ultraviolet light. The joining device of Fig. 4 has a heating means 27 for selectively hardening the thermosetting resin. The heating means is disposed below the pedestal 20, and Fig. 4 illustrates a case where a laser light source of one aspect of the heating means is used. In the present specification, "selective" means that the thermosetting resin which has been formed on the flexible film is heated to such an extent that hardening occurs without heating or discoloring the solder resist of the circuit pattern protective material. degree. The color change of the solder resist layer may cause a poor appearance, and depending on the case, the solder resist layer may be deteriorated, and the reliability of the insulation is lowered. The heating means is not limited to such items, and a heating wire heater or a magnetic wave such as a halogen heater or an ultraviolet lamp can be used. φ FIGS. 5 to 8 show an embodiment in which the electronic component 24 is accurately pressed against the inner lead via the thermosetting resin layer 6 in the first step, and the bonding is completed in the second step. kind. In the following description, the upward and downward directions are the directions of the arrows in the figure. • Because the electronic component and the inner conductor are correctly aligned in the first step. The position is false, so the alignment mechanism is not needed in the second step. Further, once heated by the heating means under the pedestal 20 from the lower side, the tool attaching the electronic component 24 can omit the heating function and only have the pressing function. In order to suppress the heat conduction to the pressurizing tool 21 side of -20-201031297, the thermosetting resin is efficiently heated, and the heat insulating and cushioning material 22 is placed on the contact surface of the pressurizing tool 21 with the electronic component 24. • In addition, in the case of joining a plurality of electronic components at the same time, in order to compensate for electricity. The height of the sub-members and the inner conductors is uneven, and it is effective to have the cushioning surface 22 of the press tool. As a material having heat-insulating properties and cushioning properties, it is applicable to fluororubber, glass cross, and heat-resistant nylon immersed in a heat-resistant core fluororubber, kerchief sheet, fluorene sheet, or laminated layer. A sheet of a fluorenone sheet and a fluorine sheet. In the second step, the pressurizing tool attaching the electronic component 24 omits the heating function and has only the pressurizing function, and does not need to heat the electronic component and the thermosetting resin through the heat insulating material, thereby suppressing the heat of the heat insulating material. Deterioration, reducing the switching frequency. In the fifth drawing, in order to selectively heat the thermosetting resin, a heating shutter 28 having an opening approximately the same as that of the electronic member is inserted between the reinforcing plate and the heating means. Thereby, the heat generated by the heat source 30 at the lower portion of the pedestal 20 passes through only the opening portion, and the thermosetting resin is cured. The heating shunt cover can be formed by forming a material that reflects heat to the glass plate at a portion other than the opening, or can be formed by electroforming a metal plate having a reflective material on the entire surface. The member is approximately the same type of through hole to make a heating shield. Also, heating the cover. The shroud may also be a portion that does not pass through the opening by absorbing heat or electromagnetic waves. The heating hood may also be translucent such that the entire flexible film substrate is heated to a temperature lower than the hardening temperature of the thermosetting resin, and the electron-21-201031297 member joint portion is heated to a temperature higher than the hardening temperature of the thermosetting resin. For the material of the pedestal 20, it is important to select a material that conducts efficiently or transmits through the aforementioned heat source. When the electromagnetic wave generating source is used as a heat source, it is preferable to use inorganic glass and quartz which transmit electromagnetic waves as a pedestal material. In the case where the infrared ray generating source is used as a heat source, helium rays transmitted through the infrared rays can be used. The arrangement place of the heat-shielding cover material is between the table base 20 and the heat source 30 in Fig. 5, but the heat-shielding cover material may be disposed on the upper surface 29(a) of the pedestal 20, or may be reflected. The material is formed on the back surface 29(b) of the pedestal 20 to be used as a mask. Alternatively, the heating shield can be buried in the pedestal. 2 〇 inside. Once the pedestal 20 itself has the function of heating the hood, it is possible to prepare different pedestals 20 in accordance with each product type, and there is a concern that productivity is lowered. Fig. 6 is an example of heating by the laser 31 in order to selectively heat the thermosetting resin. Examples of the laser include a solid laser, a helium gas laser, and a semiconductor laser. In terms of industrially inexpensive and compact, it is suitable to use semiconductor lasers, especially infrared lasers with a frequency of 6 5 Onm, and infrared lasers of 780 nm and 830 nm. It is important to select the laser wavelength in the wavelength region that the thermosetting resin absorbs. • For efficient heating of the thermosetting resin, consider configuring the laser and heat. The transmittance of the material between the hardened resin layers and the distance between the laser and the thermosetting resin layer optimize the light collection of the laser light. The material between the laser and the thermosetting resin is a pedestal 9, a reinforcing plate, and a flexible film. -22- 201031297 Determine the transmittance of each material and consider the curvature of the laser's collecting lens to determine the laser's setting position. The number of lasers can be set by the area of the output area of a laser. • The required number of configurations to move efficiently within the range of heating. The hardenable resin is hardened in a productive highland. In the case where a plurality of electronic components are joined at the same time, it is preferable to provide the number of electron members and the laser group which are simultaneously joined. Once the arrangement position of the laser can be moved, even if the coating position of the thermosetting resin on the Qin flexible film is changed, it can easily correspond, and ❹ is a preferable aspect. Fig. 7 shows an example of a case where the lamp 32 is used as a heating means in order to selectively heat the thermosetting resin. Examples of the lamp include a halogen lamp, a halogen pot heater, a krypton brightness LED lamp, a metal halide lamp, a high pressure sodium lamp, a mercury lamp, and the like. A lamp having an absorption wavelength region of the thermosetting resin to be used is used. Light can be guided from the lamp 32 by the light guiding path 33, and the thermosetting resin coated on the flexible film can be irradiated with light from the lower side of the pedestal 20 to selectively heat only the thermosetting resin. . Although the optical path can be suitably used for the light guiding path 33, a small mirror can be combined. It is also possible to use a reflector and a collecting lens to concentrate the light. It is made incident on the fiber. Further, it is also possible to use a fiber-optic output type semiconductor laser unit using a semiconductor laser instead of a lamp. In the case of this example, it is important to form the pedestal 20 with a light transmissive material. Fig. 8 shows another aspect for selectively heating the thermosetting resin. The protrusions 34 are provided on the pedestal 20, and the heaters 35, -23-201031297 are provided in the protrusions to heat the protrusions 34. The projections are configured to match the electronic position. Figures 9 and 10 show that when a plurality of electronic components are pressed, the individual electronic components are adjusted and pressurized. An example of a device for pressing means. Figure 9 shows the independent pressurization means for each electronic component. Individual pressurization tools can independently adjust the parallelism. Further, the individual pressurizing tools can be individually φ. Therefore, it is possible to adjust the amount of pressurization at the time of joining by pressing each electronic member when the electronic member is pressed. The height of the bump of the electronic component to be joined may be unmanaged, or even if the thickness of the wiring of the flexible film substrate is uneven, even if the electronic component is not sufficiently pressurized at the same time. Therefore, even in the case, all the electronic members can be surely joined by setting the pressing tool at every φ. Fig. 10 is also a view showing another embodiment of the pressing means for simultaneously joining the high electronic members. 37 is placed between the arm 25 and the electronic component to adjust the amount of electron pressurization and/or parallelism. First in the buffer bag body. Body 38. The surface of a plurality of electronic component boards having different heights is configured to be uneven. However, the buffer bag body can follow the shape, and an electronic member composed of a pressing tool which applies almost the same member to the electronic component to be contacted while being pseudo-pressed while heating the amount of heat hardening and parallelism adjusts the pressing force to the pedestal. The upper limit of the pressure, in the case of uneven thickness and reinforcement in all the heights, also produces an electronic component with the above-mentioned unevenness, and the plurality of different degrees are filled with oil by the buffer bag member individually. The pressure of the liquid-like flexible film based on the unevenness and the surface is changed. -24- 201031297 Further, the liquid in the buffer bag can be heated to assist in the hardening of the thermosetting resin in the second step. Further, once the liquid of the buffer bag body is circulated between the external cooling and heating means, the liquid in the buffer bag body is maintained. At a certain temperature, the joining temperature conditions of the second step will not follow the device. It is preferred that the dynamic time and the time of the bonding are cyclically changed to be solid. EXAMPLES Hereinafter, the present invention will be specifically described by way of Examples, but the present invention is not limited to the Examples. Further, the following two items are used as evaluation items of the joint formed by the two-step heat-curable resin of the present invention: It is possible to obtain the conduction of all the bumps of the electronic component and all the internal wires, and in the thermosetting resin. The performance of voids and cracks that are not in contact with the inner wires deteriorates. Further, as an evaluation item of the solder resist after bonding, it was judged whether or not there was discoloration based on the external inspection. (Example 1) A long-length polyimide film ("Kapton" 150EN (trade name) manufactured by Toray Dupont Co., Ltd.) having a thickness of 38/m was prepared as a φ flexible film. A roll-to-roll type sputtering apparatus for a long-length film was used to sequentially deposit an alloy film having a thickness of 150 nm of chromium: nickel = 20:80 (weight ratio) and a copper film having a thickness of 1200 nm. Using a die coater, the thickness of the reinforcing plate is 1. 1 • Painted, 370x470 mm soda lime glass coated with 100:3 (by weight) to blend UV-curable adhesive "SK Dyne" SW-1 1 A (manufactured by Synthetic Chemicals Co., Ltd.) and hardener L45 (Integrated chemical system), drying at 80 ° C for 2 minutes to obtain a peelable organic layer "The thickness of the organic layer peeled off after drying - 25 - 201031297 was 3 / zm. Then, a film for air insulation (a film of an oxime resin layer which is easily released from the polyester film) was attached to the organic layer and left for one week. • The above-mentioned polyimide film with a metal layer is cut into 370x470. After peeling off the air-insulating film on the glass, a layering device that can be attached without applying stress to the film (not shown) After attaching the polyimine film having the metal layer to the peelable organic layer, ultraviolet rays of 1000 mjr/cm 2 were irradiated from the glass substrate side to harden the organic layer. ◎ A positive photoresist was applied to a copper film by a slit die coater, and dried at 80 ° C for 10 minutes. The photoresist was exposed and developed through a photomask, and a photoresist layer having a thickness of 12/zm was formed in a portion where the film was not to be coated. The reticle pattern used to form the circuit pattern is formed into the shape shown below. • At 19. 3 nun x2. On the two long sides of the 5 mm rectangle, 772 wires (width 10 jum, length 5 nun) are arranged on each side at 25;/m pitch as the inner guide. To make the center with the above 19. 3 legs x2. The 5 mm rectangle is the same, and the outermost end is φ. 6 mm x23. The two long sides of a 75 mm rectangle are arranged at an interval of 50 em, with 772 wires (width 25 from m and length 100 μm) arranged on each side as an outer lead. Connect the inner conductor with the wiring of the width l〇ym in a one-to-one manner. The outer wire is treated as a unit. From the middle of the 370 mm length of the glass substrate. The heart begins to equidistantly configure the unit to 40. 6 legs are arranged in 8 columns. An equidistant configuration from the center in the 470 mm length direction of the glass substrate, to 24. 18 mm spacing configuration. 144 1C wafers of 8 rows x 18 rows -26 - 201031297 were mounted on the flexible film substrate. Next, a copper layer having a thickness of 8 vm was formed by electrolytic plating in a copper sulfate plating solution using the above copper film as an electrode. The photoresist was peeled off by the photoresist stripping solution, and then a copper film and a chromium-nickel alloy film under the resist layer were removed by a soft etchant formed of a hydrogen peroxide-sulfuric acid aqueous solution. Next, on the copper plating film, the thickness is formed by electrolytic plating. The tin layer of 4 is made into a circuit pattern. Thereafter, in order to protect the circuit pattern, a solder resist NPR-3300NH (manufactured by PolyTech Co., Ltd., Japan) was formed on the circuit pattern by a screen printer. The solder resist layer was formed to a thickness of 10/im on the circuit pattern by curing in an oven at 120 ° C for 90 minutes. Using the length measuring machine DR-800 (manufactured by Dainippon SCREEN Co., Ltd.), the center of the width direction of the outermost inner conductor was measured for the unit on the polyimide film (design 値 19. 3 legs), in all units, the results are all in the design 値 ± 1 from m (0. In the range of 00 5%), the positional accuracy is very good. 8626-160 (Tg: 120 ° C, hardening temperature φ: 200 ° C (5 sec)) of NCP resin made of Namics was used as a thermosetting resin, and was applied to a circuit pattern using a Musashi Engineering distributor device FAD-320S. After the inner side of the inner lead portion, it was semi-cured in a baking oven at 80 ° C for 30 seconds. Next, the first step is performed with the 1C bonding device FC-2000 (Toray Engineering, one heating and pressing tool) to be used as the electric power. 20 of the sub-components. 0 mm x3. The 0C wafer of 0 mm is positioned. The 1C wafer was held by a heating and pressurizing tool composed of a porous ceramic, and the heating and pressing tools were heated by a ceramic heater to abut against the NCP resin. Set the temperature of the pedestal carrying the flexible film substrate from -27 to 201031297 to 100 °C. As the setting condition of FC-2 00 0, the set temperature is set to 120 ° C, and the pressing pressure of the heating and pressing tools is set to 5 kg / wafer (3. 2g/bump), heating and pressurizing time is set to 1. 0 seconds (including the transfer of the wafer, the alignment is 3. 0 seconds). In this case, the operating time of each of the flexible film substrates was 432 seconds. Next, the second step is carried out using the IR bonder shown in Fig. 3. The pressurizing tool sets the contact area with the 1C wafer to 360 mm x 4 legs by simultaneously pressing one column of eight 1 C wafers. The heating system sets the output so that the NCP portion becomes 200 °C from the side of the reinforcing plate by the near-infrared ray irradiation mechanism. The pressurizing tool is 15kg/wafer (9. The load of 7 g/bump is abutted for 5 seconds. Since it takes 2 seconds to transport the substrate after pressing, the working time of each flexible film substrate is 1 26 seconds of 1 8 columns of X (5 + 2) seconds. As a result, the 1C wafer mounting time per flexible film substrate was 558 seconds, which was 55 times the working time of 1008 seconds with respect to Comparative Example 1 (in the case of one heating and pressing tool). 3%, shortened by 44. 7%. Next, the number of conduction failures due to the positional deviation of the 1C bump and the inner conductor and the hardening state of the thermosetting resin were investigated. Open-short inspection of 14 40 1Cs of 10 bonded flexible film substrates. Viewing the position of the 1C bump and the inner conductor from the flexible film surface of the circuit pattern with poor open circuit shift. According to this result, there is no problem that the open circuit is defective due to the large positional shift between the two. Further, the 1 piece of the flexible film substrate was peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film -28 to 201031297. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. However, there is a near-black discoloration of the solder resist on the periphery of the ic which has been bonded to the flexible film substrate, and the appearance inspection is poor. . (Example 2) A flexible film substrate was prepared in the same manner as in Example 1. In addition to the second step of heating and pressurizing, the contact area with the 1C wafer is 360 mm x 2 mm, and two rows are arranged in parallel at a pitch of 24 mm, and two columns simultaneously heat and pressurize eight columns/columns 1C. In the same manner as in the first embodiment, a 1C wafer was mounted in the same manner as in the first embodiment. The working time of each of the flexible film substrates in the first step was 432 seconds. In the second step, the operating time of each of the flexible film substrates was 63 seconds of 9 lines x (5 + 2) seconds. By this, the 1C wafer mounting time per flexible film substrate was 495 seconds, which was 49.00 compared with the working time of 1 008 seconds in Comparative Example 1 (in the case of one heating and pressing tool). 1%, shortened by 50. 9%. Q Next, the number of conduction failures due to the positional deviation of the bumps of the electronic component and the inner conductor, and the hardening state of the thermosetting resin were investigated. The open-circuit short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner leads were observed from the flexibility of the circuit pattern in which the open circuit was defective. According to the conclusion. If there is no open circuit defect due to the large positional offset between the two. Further, one flexible film substrate was peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. The voids and cracks around the line of the inner guide -29-201031297 were not found on all the flexible film substrates. Bad condition. However, the appearance of "near black discoloration" having a solder resist on the periphery of the ic bonded to the flexible film substrate was poor. . (Example 3) In addition to the 1C joining device used in the first step. The heating and pressurizing tools of the FC-2000 were set to two. In the same manner as in the first embodiment, the 1C wafer was assembled. The FC-2000 is modified as follows: two heating and pressing tools are arranged so that the heating and pressing tools of the two are not interfered with each other. * The electronic structure is efficiently removed from the special disk. And positioning. The working time of each of the flexible film substrates in the first step was 216 seconds. In the second step, the operating time of each of the flexible film substrates was 126 seconds of 18 lines x (5 + 2) seconds. Thereby, the _ 1C wafer mounting time per flexible film substrate was 342 seconds, which was 67 times with respect to the working time of 504 seconds with respect to Comparative Example 2 (in the case of two heating and pressing tools). 9%, shortened by 32. 1 %. Q Next, investigate the positional deviation of the bumps and inner conductors of the electronic components. The number of poor conduction caused by the transfer and the hardening state of the thermosetting resin. The open-circuit short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner leads were observed from the flexibility of the circuit pattern in which the open circuit was defective. According to the conclusion. If there is no open circuit defect due to the large positional offset between the two. Further, ten flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the wires -30-201031297 were not found. However, in the vicinity of the ic which has been bonded to the flexible film substrate, there is a near-tank discoloration of the solder resist, and the appearance inspection is poor. • (Example 4) In addition to the 1C bonding device used in the first step. The FC-2000 has two heating and pressurizing tools. The second step of heating and pressurizing means that the contact area with the 1C wafer is 360 mm x 2 and the two columns are arranged in parallel at a pitch of 24 mm. A 1C wafer was assembled in the same manner as in Example 1 except that eight/column 1C wafers were simultaneously heated and pressurized. The working time of each of the flexible film substrates in the first step was 216 seconds. In the second step, the operating time of each of the flexible film substrates was 63 seconds of 9 lines (5 + 2) seconds. Thereby, the 1C wafer mounting time per flexible film substrate was 279 " seconds, which became 55 times of the working time of 504 seconds with respect to Comparative Example 2 (in the case of two heating and pressing tools). 4%, shortened by 44. 6% » Next, investigate the number of poor conduction due to the positional deviation of the bumps of the electronic component and the internal conductor, and the hardening state of the thermosetting resin. The open-short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner wires were shifted from the flexible film surface of the circuit pattern in which the open circuit was defective. According to this result, there is no problem that the open circuit is defective due to the large positional shift between the two. . Further, 10 flexible film substrates were peeled off from the glass. The thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, no defects such as voids and cracks in the vicinity of the inner lead wires were observed. However, in the vicinity of the ic which has been bonded to the flexible film substrate, there is a near black discoloration of the solder resist, and the appearance inspection is poor. (Comparative Example 1) As in Example 1, a flexible film substrate was prepared, and as in Example 1, NCP resin 8463-160 was applied to a 1C wafer structure by a dispenser. Formed by the area. Next, with 1C joint device FC-2000 (Dongli
Engineering (股）製）以1步驟使熱硬化型樹脂硬化。使 1C晶片與實施例1同樣成爲20.0画x3.0 mm，以由多孔質陶 瓷所形成之加熱、加壓工具來把持1C晶片，藉由陶瓷加熱 器來使加熱、加壓工具加熱而押抵至NCP樹脂。作爲 FC-2000的設定條件，設定溫度設爲120°C，加熱、加壓工 具之按押壓力設爲30kg/晶片（19.4g/凸塊），加熱、加壓 時間設爲5.0秒（包含晶片的搬送、對位的話爲7.0秒）。 ' 每一片可撓性薄膜基板的作業時間爲144個x(5+2)秒的 1 008 秒。 接著，調査因電子構件的凸塊與內導線的位置偏移所造 Q 成的導通不良數量、熱硬化型樹脂的硬化狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢查，從發生開路不良的電路圖案之可撓性 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 - 果，因兩者之大的位置偏移而發生開路不良者爲2個。 . 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。在已接合至可撓性薄 -32- 201031297 膜基板的1C周邊，沒有防焊阻劑的變色。 (比較例2)除了在1C接合裝置FC-2000 (東麗 Engineering (股）製）有2個加熱、加壓工具以外’與比 . 較例1同樣地以1步驟來構裝1C晶片》作爲FC-2000的設 ， 定條件，設定溫度設爲120°C，加熱、加壓工具之按押壓力 設爲30kg/晶片（19.4g/凸塊），加熱、加壓時間設爲5.0 秒（包含晶片的搬送、對位爲7.0秒）。每一片可撓性薄 膜基板的作業時間爲72個x(5+2)秒的504秒。 接著，調查因電子構件的凸塊與內導線的位置偏移所造 成的導通不良數量、熱硬化型樹脂的硬化狀況。針對已接 合的10片可撓性薄膜基板之1440個電子構件進行開路-短 路檢查，從發生開路不良的電路圖案之可撓性薄膜面觀察 ' 電子構件的凸塊與內導線的位置偏移。依該結果，因兩者 之大的位置偏移而發生開路不良者爲3個。 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 〇 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。在已接合至可撓性薄 膜基板的1C周邊，沒有防焊阻劑的變色。 (比較例3)與實施例1同樣地準備可撓性薄膜基板， - 把NCP樹脂Namics製8463-1 60形成至1C晶片構裝區域， . 除了以熱硬化型樹脂的硬化溫度以上的200°C作爲第一步 驟的加熱溫度以外，與實施例1同樣地以2步驟接合電子 構件與可撓性薄膜基板。 -33- 201031297 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢査’從發生開路不良的電路圖案之可撓性 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 . 果，沒有因兩者之大的位置偏移而發生開路不良者。 接著，從玻璃剝離1〇個可撓性薄膜基板’從可撓性薄膜 側觀察熱硬化型樹脂。在全部的可撓性薄膜基板之內導線 周邊觀察到空隙、龜裂。在已接合至可撓性薄膜基板的1C 周邊，有防焊阻劑的近黑變色，外觀檢査爲不良。 ❹ 針對以上實施例1至比較例2的作業時間整理、顯示於 表1。因爲實施例1至4爲一次性加壓複數個1C晶片，所 以相較於比較例1至2，每一片可撓性薄膜基板的作業時 間被縮短。進一步地，因爲比較例1、2係以一次性加壓來 ' 進行接合，相對於觀察到電子構件的凸塊與內導線的位置 偏移，藉由2階段加壓所接合的實施例未觀察到位置偏 移。實際證明本發明的接合方法爲可以高精度來進行接合 ❿ 對位。 -34- 201031297 [表1] 第一步驟 第二步驟 每一片 的棒 -可撓性薄B 媒時間 莫基板 少） 與比較例1/2的 比較（縮短率） 加熱、加壓 工具數量 壓著 次數 加熱、加壓 工具數量 同時壓 著次數 壓著 次數 第一 步驟 第二 步驟 總時間 實施例1 1 144 1 8 18 432 126 558 比較例1的55.3% 實施例2 1 144 1 16 9 432 63 495 比較例1的49.1% 實施例3 2 72 1 8 18 216 126 342 比較例2的67.9% 實施例4 2 72 1 16 9 216 63 279 比較例2的55.4% 比較例1 1 144 1008 比較例2 2 72 504 比較例3係接合的順序與實施例1相同，總作業時間不 變。但是，相異點爲第一步驟的加熱溫度爲在熱硬化型樹 脂的硬化溫度以上予以加熱。其結果，雖然未產生位置偏 移，但是產生短路不良的發生，辨認出空隙及龜裂。因此， Ο 瞭解到：第一步驟的加熱溫度應該以用於接合的熱硬化型 樹脂之硬化溫度以下的溫度加熱。 (實施例5) 如同實施例1，準備可撓性薄膜基板，再者，如同實施 ' 例1進行而在第一步驟把1C假壓著至可撓性薄膜基板。接 - 下來，以第4圖所示之接合裝置來使熱硬化型樹脂硬化。 在載置附補強板的可撓性薄膜基板且以玻璃所製作之台座 9、與近紅外線加熱器之間設置加熱遮斷罩，用以選擇性地 -35- 201031297 加熱可撓性薄膜基板的構裝區域。 使用l.linm厚的石英玻璃作爲遮罩材，以使近紅外線加 熱器反射爲目的而把鉻濺鍍至前述玻璃表面，在位於構裝 • 區域下部的場所形成與構裝區域同尺寸的20.3x3.5腿之開 . 口。以使面對近紅外線加熱器的方式設置濺鍍面。使用近 紅外線加熱器作爲加熱手段。加壓工具係以使同時按押1 列8個1C晶片的方式把與1C晶片的接觸面積定爲3 60 mm X 4 mm。加熱係從補強板側利用近紅外線照射機構，以使NCP 部分成爲200 °C的方式設定輸出。加壓工具係以15kg/晶片 (9.7g/凸塊）的荷重押抵5秒鐘。 接著，調查因電子構件的凸塊與內導線的位置偏移所造 成的導通不良數量、熱硬化型樹脂的硬化狀況。 ’ 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢査，從發生開路不良的電路圖案之可撓性 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 © 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。 • 針對已接合的10片可撓性薄膜基板之1 440個電子構件 . 進行外觀檢查。結果，在全部構件的防焊阻劑部都看不到 變色。 例 施 實 -36- 201031297 如同實施例1，準備可撓性薄膜基板，再者，如同實施 例1進行而在第一步驟把1C假壓著至可撓性薄膜基板。接 下來，除了使用半導體雷射作爲選擇性地加熱可撓性薄膜 - 基板之構裝區域的手段以外，如同實施例5，使熱硬化型 . 樹脂的NCP硬化。 使用濱松Photonics製L9277作爲半導體雷射。把可撓性 薄膜基板載置於使用2麵厚玻璃的台座，台座下面與半導 體雷射的距離定爲10腿，以XY台座在XY方向上移動， ❹ 藉以加熱構裝區域20.3x3.5晒。 接著，調査因電子構件的凸塊與內導線的位置偏移所造 成的導通不良數量、熱硬化型樹脂的硬化狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 ' 進行開路-短路檢査，從發生開路不良的電路圖案之可撓性 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 果，沒有因兩者之大的位置偏移而發生開路不良者。 Q 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 • 進行外觀檢査。其結果，在全部構件的防焊阻劑部都看不 . 到變色。 (實施例7 ) 如同實施例1，準備可撓性薄膜基板，再者，如同實施 -37- 201031297 例1進行而在第一步驟把1C假壓著至可撓性薄膜基板。接 下來，除了使用鹵素燈作爲選擇性地加熱可撓性薄膜基板 之構裝區域的手段以外，與實施例5同樣地使熱硬化型樹 . 脂的NCP硬化。使用MORITEX製MHAB-150W-100V作爲 _ 鹵素燈，使用採用玻璃製光纖之耐熱規格的導光器（light guide)作爲導光路徑。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢査，從發生開路不良的電路圖案之可撓性 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離1 0個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行外觀檢査。其結果，在全部構件的防焊阻劑部都看不 Q 到變色。 (實施例8) 如同實施例1，準備可撓性薄膜基板，再者，如同實施 例1進行而在第一步驟把1C假壓著至可撓性薄膜基板。接 • 下來，除了使構裝區域正下方的台座突起、加熱該突起部 _ 來作爲選擇性地加熱可撓性薄膜基板之構裝區域的手段以 外，如同實施例5，使熱硬化型樹脂的NCP硬化。把八光 製匣式加熱器（cartridge heater )埋入台座突起部來作爲用 -38- 201031297 以加熱的熱源。 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行開路-短路檢查，從發生開路不良的電路圖案之可撓性 - 薄膜面觀察電子構件的凸塊與內導線的位置偏移。依該結 _ 果，沒有因兩者之大的位置偏移而發生開路不良者。 又，從玻璃剝離10個可撓性薄膜基板，從可撓性薄膜側 觀察熱硬化型樹脂。在全部的可撓性薄膜基板，未發現內 導線周邊的空隙、龜裂之不良狀況。 〇 針對已接合的10片可撓性薄膜基板之1440個電子構件 進行外觀檢查。其結果，在全部構件的防焊阻劑部都看不 到變色。 實施例1至4係能在以高精度對位電子構件後，進行接 - 合，且亦能縮短作業時間。但是，在防焊阻劑部產生近黑 變色，外觀檢査爲不良。這是起因於：用以硬化的加熱係 藉由來自補強板側的近紅外線照射機構加熱整體可撓性薄 Q 膜基板。 對此，實施例5至8係採用如下方法的實施例：從台座 下方，選擇性地僅加熱存在有接合用的熱硬化性樹脂的部 分。雖然加熱手段不同，但是由於僅加熱存在有熱硬化性 • 樹脂的部份，所以解消了防焊阻劑部的外觀不良。即，藉 . 由選擇性地加熱’本發明的接合方法能獲得更好的接合結 果。 產業上之可利用性 -39- 201031297 本發明能廣泛地應用於已形成可撓性薄膜電路基板、把 ic等電子構件接合固定至可撓性薄膜基板的技術。尤其 是，能應用至所謂小型電話、液晶電視及小型電視之使用 . 輕量及薄型的電路基板的電子機器。 _ 【圖式簡單說明】 第1圖係附補強板之可撓性薄膜基板的剖面圖。 第2圖係本發明之電子構件構裝方法的槪略圖。 第3圖係顯示本發明第二步驟之接合裝置之整體形狀 e 的槪略圖。 第4圖係顯示本發明第二步驟之接合裝置之其他較佳 形態整體形狀的槪略圖。 第5圖係在本發明第二步驟之接合裝置中，使用加熱 ' 遮斷罩及熱源作爲加熱手段情況的槪略圖。 第6圖係在本發明第二步驟之接合裝置中，使用雷射 光源作爲加熱手段情況的槪略圖。 Q 第7圖係在本發明第二步驟之接合裝置中，使用燈及 導光路徑作爲加熱手段情況的槪略圖。 第8圖係在本發明第二步驟之接合裝置中，在台座上 的突起部配置發熱電阻作爲加熱手段情況的槪略圖。 • 第9圖係在本發明第二步驟之接合裝置中，個別地調 整電子構件的加壓量及/或平行度情況的槪略圖。 第10圖係在本發明第二步驟之接合裝置中，個別地調 整電子構件的加壓量及/或平行度情況之其他態樣的槪略 -40- 201031297 圖。 【主要元件符號說明】 1 可撓性薄膜 • 2 可剝離的有機物層 . 3 補強板 4 電路圖案 5 防焊阻劑 6 6 7、 熱硬化型樹脂 24 電子構件 8 9、 加熱、加壓工具 20 台座 10 對位記號辨識用照相機 . 11 位置控制用控制器 12 電磁波照射部 13 反射板 G 14 備用區塊 15 控制器單元 16 熱交換器 17 電磁波 • 21 加壓工具 . 22 絕熱、緩衝材 23 支柱 25 臂 -41 - 201031297Engineering (manufacturing)) The thermosetting resin is cured in one step. In the same manner as in the first embodiment, the 1C wafer was set to 20.0 x 3.0 mm, and the 1C wafer was held by a heating and pressing tool formed of a porous ceramic, and the heating and pressing tools were heated by a ceramic heater. To NCP resin. As a setting condition of the FC-2000, the set temperature was set to 120 ° C, the pressing pressure of the heating and pressurizing tool was set to 30 kg / wafer (19.4 g / bump), and the heating and pressurizing time was set to 5.0 seconds (including the wafer). It is 7.0 seconds when it is in the case of the transfer. 'The operating time of each flexible film substrate is 144 x (5 + 2) seconds of 1,008 seconds. Next, the number of conduction defects caused by the positional deviation of the bumps of the electronic component and the inner lead wire and the hardening state of the thermosetting resin were investigated. The open-circuit short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the positional deviation of the bumps of the electronic component and the inner wires was observed from the flexible film surface of the circuit pattern in which the open circuit was broken. According to this result, there are two open defects due to the large positional offset between the two. Further, ten flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. There is no discoloration of the solder resist on the periphery of 1C which has been bonded to the flexible thin -32-201031297 film substrate. (Comparative Example 2) In the same manner as in Example 1 except that there are two heating and pressurizing tools in the 1C joining device FC-2000 (manufactured by Toray Engineering Co., Ltd.), the 1C wafer is assembled in one step. FC-2000 is set and set, the set temperature is set to 120 °C, the pressing pressure of the heating and pressing tools is set to 30kg/wafer (19.4g/bump), and the heating and pressurizing time is set to 5.0 seconds (including The transfer and registration of the wafer is 7.0 seconds). The operating time of each flexible film substrate was 504 seconds of 72 x (5 + 2) seconds. Next, the number of conduction failures due to the positional deviation of the bumps of the electronic component and the inner conductor, and the hardening state of the thermosetting resin were investigated. The open-short-circuit inspection was performed on 1440 electronic components of the 10 flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner wires were shifted from the flexible film surface of the circuit pattern in which the open circuit was defective. According to this result, there are three open defects due to the large positional offset between the two. Further, ten flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. There is no discoloration of the solder resist on the periphery of 1C which has been bonded to the flexible film substrate. (Comparative Example 3) A flexible film substrate was prepared in the same manner as in Example 1. - NCP resin No. 8463-1 60 was formed into a 1C wafer structure region, except for a curing temperature of 200 ° or more. C was bonded to the flexible member substrate in two steps in the same manner as in Example 1 except that the heating temperature was the first step. -33- 201031297 Open-short-circuit check for 1440 electronic components of 10 flexible film substrates that have been joined'. View the position of the bumps and inner leads of the electronic component from the flexible film surface of the circuit pattern with poor open circuit. Offset. According to this result, there is no poor open circuit due to the large positional offset between the two. Next, one flexible flexible film substrate was peeled off from the glass. The thermosetting resin was observed from the side of the flexible film. Grooves and cracks were observed around the lead wires in all of the flexible film substrates. In the vicinity of 1C that has been bonded to the flexible film substrate, there is a near-black discoloration of the solder resist, and the appearance inspection is poor.进行 The work time of the above Example 1 to Comparative Example 2 is organized and shown in Table 1. Since Examples 1 to 4 were one-time pressurization of a plurality of 1C wafers, the working time of each of the flexible film substrates was shortened as compared with Comparative Examples 1 to 2. Further, since Comparative Examples 1 and 2 were joined by one-time pressurization, the position in which the bumps of the electronic component and the inner lead were observed was shifted, and the example joined by the two-stage pressurization was not observed. To position offset. It has been confirmed that the bonding method of the present invention can perform bonding ❿ alignment with high precision. -34- 201031297 [Table 1] The first step, the second step, the rod of each piece, the flexible thin B medium time, the number of substrates is small, and the comparison with Comparative Example 1/2 (shortening ratio) The number of heating and pressing tools is pressed Number of times heating, number of pressurizing tools simultaneously pressing times of pressing times First step Second step Total time Example 1 1 144 1 8 18 432 126 558 55.3% of Comparative Example 1 Example 2 1 144 1 16 9 432 63 495 49.1% of Comparative Example 1 Example 3 2 72 1 8 18 216 126 342 67.9% of Comparative Example 2 Example 4 2 72 1 16 9 216 63 279 55.4% of Comparative Example 2 Comparative Example 1 1 144 1008 Comparative Example 2 2 72 504 Comparative Example 3 was joined in the same order as in Example 1, and the total working time was unchanged. However, the difference is that the heating temperature in the first step is heated above the hardening temperature of the thermosetting resin. As a result, although no positional deviation occurred, occurrence of a short-circuit defect occurred, and voids and cracks were recognized. Therefore, it is understood that the heating temperature of the first step should be heated at a temperature lower than the hardening temperature of the thermosetting resin for bonding. (Example 5) A flexible film substrate was prepared as in Example 1, and further, 1C was pressed to the flexible film substrate in the first step as in the case of "Example 1". Next, the thermosetting resin is cured by the joining device shown in Fig. 4. A heating shutter is disposed between the pedestal 9 made of glass and the near-infrared heater on the flexible film substrate on which the strong plate is attached, for selectively heating the flexible film substrate from -35 to 201031297 Construction area. Using l.linm thick quartz glass as a masking material, the chrome is sputtered onto the surface of the glass for the purpose of reflecting the near-infrared heater, and the same size as the structure is formed in the place below the structure and the area. X3.5 legs open. Mouth. The sputter surface is provided in such a manner as to face the near-infrared heater. A near-infrared heater is used as a heating means. The pressing tool sets the contact area with the 1C wafer to 3 60 mm X 4 mm in such a manner that one column of 8 1 C wafers is simultaneously pressed. The heating system uses a near-infrared irradiation mechanism from the side of the reinforcing plate to set the output so that the NCP portion becomes 200 °C. The pressurizing tool was held at a load of 15 kg/wafer (9.7 g/bump) for 5 seconds. Next, the number of conduction failures due to the positional deviation of the bumps of the electronic component and the inner conductor, and the hardening state of the thermosetting resin were investigated. The open-circuit short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the positional deviation of the bumps of the electronic component and the inner leads was observed from the flexible film surface of the circuit pattern in which the open circuit was broken. According to this result, there is no open circuit defect due to the large positional offset between the two. Further, ten flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. • Visual inspection of 1 440 electronic components of 10 bonded flexible film substrates. As a result, no discoloration was observed in the solder resist portions of all the members. EXAMPLES - 36 - 201031297 A flexible film substrate was prepared as in Example 1, and further, as in Example 1, 1C was pressed to the flexible film substrate in the first step. Next, in the same manner as in Example 5, the NCP of the thermosetting type resin was hardened except that a semiconductor laser was used as a means for selectively heating the flexible film-substrate mounting region. L9277 made by Hamamatsu Photonics was used as a semiconductor laser. The flexible film substrate is placed on a pedestal using two-sided glass, the distance from the semiconductor laser under the pedestal is set to 10 legs, and the XY pedestal is moved in the XY direction, 借 by heating the structure area 20.3x3.5 . Next, the number of conduction failures due to the positional deviation of the bumps of the electronic component and the inner conductor, and the hardening state of the thermosetting resin were investigated. The open-circuit/short-circuit inspection was performed on 1440 electronic components ' of the ten flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner wires were shifted from the flexible film surface of the circuit pattern in which the open circuit was broken. According to this result, there is no problem that the open circuit is defective due to the large positional shift between the two. Q, 10 flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. Visual inspection of 1440 electronic components of 10 bonded flexible film substrates. As a result, discoloration was not observed in the solder resist portion of all the members. (Example 7) A flexible film substrate was prepared as in Example 1, and further, as in Example 1 of -37-201031297, 1C was pressed to the flexible film substrate in the first step. Then, the NCP of the thermosetting resin was cured in the same manner as in Example 5 except that a halogen lamp was used as a means for selectively heating the constituent region of the flexible film substrate. A MHAB-150W-100V manufactured by Moritex was used as the _ halogen lamp, and a light guide using a heat-resistant specification of a glass fiber was used as a light guiding path. The open-circuit short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the positional deviation of the bumps of the electronic component and the inner wires was observed from the flexible film surface of the circuit pattern in which the open circuit was broken. According to this result, there is no problem that the open circuit is defective due to the large positional shift between the two. Further, 10 flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed. The visual inspection was performed on 1440 electronic components of the 10 flexible film substrates that were joined. As a result, no discoloration was observed in the solder resist portion of all the members. (Example 8) A flexible film substrate was prepared as in Example 1, and further, as in Example 1, 1C was pressed to the flexible film substrate in the first step. In the same manner as in the fifth embodiment, the thermosetting resin is used as the means for selectively heating the projections directly below the mounting region and heating the projections as a means for selectively heating the constituent regions of the flexible film substrate. NCP hardens. The eight-light cartridge heater is embedded in the pedestal protrusion as a heat source for heating with -38-201031297. The open-short-circuit inspection was performed on 1440 electronic components of the ten flexible film substrates that were joined, and the position of the bumps of the electronic component and the inner wires were shifted from the flexible-film surface of the circuit pattern in which the open circuit was defective. According to this result, there is no problem of poor open circuit due to the large positional offset between the two. Further, ten flexible film substrates were peeled off from the glass, and the thermosetting resin was observed from the side of the flexible film. In all of the flexible film substrates, voids and cracks in the vicinity of the inner leads were not observed.外观 Visual inspection of 1440 electronic components of 10 bonded flexible film substrates. As a result, no discoloration was observed in the solder resist portions of all the members. In the first to fourth embodiments, the electronic components can be aligned with high precision, and the working time can be shortened. However, near-black discoloration occurred in the solder resist portion, and the appearance inspection was poor. This is because the heating system for hardening heats the entire flexible thin Q film substrate by the near-infrared irradiation mechanism from the reinforcing plate side. On the other hand, Examples 5 to 8 employ an embodiment in which the portion where the thermosetting resin for bonding is present is selectively heated only from under the pedestal. Although the heating means is different, since only the portion where the thermosetting resin is present is heated, the appearance of the solder resist portion is eliminated. Namely, a better bonding result can be obtained by selectively heating the bonding method of the present invention. Industrial Applicability - 39 - 201031297 The present invention can be widely applied to a technique in which a flexible thin film circuit board is formed and an electronic member such as ic is bonded and fixed to a flexible film substrate. In particular, it can be applied to so-called small phones, LCD TVs, and small TVs. Electronic devices for lightweight and thin circuit boards. _ [Simple description of the drawings] Fig. 1 is a cross-sectional view of a flexible film substrate with a reinforcing plate. Fig. 2 is a schematic view showing a method of assembling an electronic component of the present invention. Figure 3 is a schematic diagram showing the overall shape e of the joining device of the second step of the present invention. Fig. 4 is a schematic view showing the overall shape of another preferred embodiment of the joining device of the second step of the present invention. Fig. 5 is a schematic view showing the use of a heat-shielding cover and a heat source as a heating means in the joining device of the second step of the present invention. Fig. 6 is a schematic view showing the use of a laser light source as a heating means in the joining device of the second step of the present invention. Q Fig. 7 is a schematic diagram showing the use of a lamp and a light guiding path as a heating means in the joining device of the second step of the present invention. Fig. 8 is a schematic view showing a state in which a heating resistor is disposed as a heating means in a projection portion on a pedestal in the joining device of the second step of the present invention. • Fig. 9 is a schematic diagram showing the state of pressurization and/or parallelism of the electronic component individually in the joining device of the second step of the present invention. Fig. 10 is a schematic view showing another embodiment of the pressing amount and/or the parallelism of the electronic member in the joining device of the second step of the present invention - 40-201031297. [Main component symbol description] 1 Flexible film • 2 Peelable organic layer. 3 Reinforced plate 4 Circuit pattern 5 Solder resist 6 6 7. Thermosetting resin 24 Electronic component 8 9. Heat and pressure tool 20 Locator 10 Alignment Marking Camera. 11 Position Control Controller 12 Electromagnetic Wave Irradiation Unit 13 Reflector G 14 Spare Block 15 Controller Unit 16 Heat Exchanger 17 Electromagnetic Wave • 21 Pressurized Tool. 22 Insulation, Buffer Material 23 Pillar 25 arm-41 - 201031297
26 框 架 27 ' 30 熱 源 28 加 熱 遮 斷 罩 29 ( a ) 台 座 上 面 29 ( b ) 台 座 下 面 3 1 半 導 Hrffa 體 雷 射 32 燈 33 導 光 路 徑 34 台 座 的 突 起 35 加 熱 器 36 加 熱 器 加 熱 用 電源 37 緩 衝 袋 體 38 液 體 100 可 撓 性 薄 膜 基 板26 Frame 27 ' 30 Heat source 28 Heating shield 29 ( a ) Upper pedestal 29 ( b ) Lower pedestal 3 1 Semi-guided Hrffa body laser 32 Lamp 33 Light guide path 34 Protrusion of pedestal 35 Heater 36 Heater for heater heating 37 Buffer bag body 38 Liquid 100 Flexible film substrate
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