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TW201030879A - Cleaning module for a substrate and apparatus for processing a substrate having the same - Google Patents

Cleaning module for a substrate and apparatus for processing a substrate having the same Download PDF

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Publication number
TW201030879A
TW201030879A TW098138905A TW98138905A TW201030879A TW 201030879 A TW201030879 A TW 201030879A TW 098138905 A TW098138905 A TW 098138905A TW 98138905 A TW98138905 A TW 98138905A TW 201030879 A TW201030879 A TW 201030879A
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TW
Taiwan
Prior art keywords
cleaning
block
substrate
opening
drying
Prior art date
Application number
TW098138905A
Other languages
Chinese (zh)
Other versions
TWI407522B (en
Inventor
Jeong-Yeol Choi
Tae-Youl Youn
Hyoung-Ki Park
Jeong-Seon Kim
Original Assignee
Semes Co Ltd
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Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of TW201030879A publication Critical patent/TW201030879A/en
Application granted granted Critical
Publication of TWI407522B publication Critical patent/TWI407522B/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • B08B1/20Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B08B11/04Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning In General (AREA)

Abstract

In an apparatus including a cleaning module for cleaning a substrate, the cleaning module includes a transfer for transfer the substrate in a first direction and a cleaning block positioned adjacent to the substrate and extending in a second direction substantially perpendicular to the first direction. The cleaning block includes a first block for supplying a cleaning agent onto the substrate and a second block that is positioned at a side portion of the first block and sucks up the cleaning agent on the substrate. The first and second blocks are arranged in such a configuration that the cleaning agent flows on the substrate in a direction reverse to the first direction, so that the second block is positioned prior to the first block in the first direction.

Description

201030879 i wj〇iur/\ 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種基板處理裝置及其清潔模組,且 特別是有關於一種平面顯示裝置之基板的清潔模組及具 有此清潔模組之基板處理裝置。 【先前技術】 平面顯示器裝置通常在的大型基板(例如像是玻璃 參 基板)上經由不同的單元製造程序製造出來。例如,單元製 造程序中,蝕刻程序、去除程序、清潔程序和乾燥程序連 續地在基板上執行,因此基板連續地傳輸至每一程序裝置 以執行每一單元製造程序。一般而言,程序裝置依照單元 製造程序的順序連續地設置。 例如,程序裝置包括對基板執行清潔程序的清潔模 組,以及對基板執行乾燥程序的乾燥模組。 傳統的清潔模組通常是用刷子清除基板上的污染 ❿ 物。然而,由於刷子的凹陷或是偏斜,在基板的邊緣部份 上之污染物不易充分的去除。此外,傳統的清潔模組必須 擴大以容置刷子。更進一步,刷子可能也提供不同的微粒 使基板被污染。 【發明内容】 本發明主要係提供一種創新的概念,提供一種可減 少體積並且增進清潔能力的清潔模組。 提供一種包括 本發明主要係提供一種創新的概念, 3 201030879 ,201030879 i wj〇iur/\ VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus and a cleaning module thereof, and more particularly to a cleaning module for a substrate of a flat display device and A substrate processing apparatus having the cleaning module. [Prior Art] Flat panel display devices are usually fabricated on a large substrate (e.g., a glass substrate) via different cell fabrication processes. For example, in the unit manufacturing process, the etching process, the removing process, the cleaning process, and the drying process are continuously performed on the substrate, so the substrate is continuously transferred to each of the program devices to execute each unit manufacturing process. In general, the program devices are continuously arranged in the order of the unit manufacturing program. For example, the program device includes a cleaning module that performs a cleaning process on the substrate, and a drying module that performs a drying process on the substrate. Conventional cleaning modules typically use a brush to remove contaminants from the substrate. However, due to the depression or deflection of the brush, contaminants on the edge portion of the substrate are not easily removed. In addition, conventional cleaning modules must be enlarged to accommodate the brush. Further, the brush may also provide different particles to contaminate the substrate. SUMMARY OF THE INVENTION The present invention is primarily directed to providing an innovative concept for providing a cleaning module that reduces volume and enhances cleaning capabilities. Providing a concept comprising the invention primarily provides an innovation, 3 201030879,

TW5810PA 上述的清潔模組之基板處理裝置。 根據本發明創新概念提出的一些實施例,提供一清 潔模組,包括用.來在第一方向傳輸基板的傳輸器,還包括 設置毗鄰於基板且實質上在垂直於第一方向之第二方向 延伸的清潔區塊。清潔區塊包括用來提供清潔劑於基板上 的第一清潔區塊,還包括設置於第一清潔區塊的邊緣部份 並且用來吸入基板上的清潔劑之第二清潔區塊。 在一實施例中,第一清潔區塊和第二清潔區塊設置 於一構造中,該構造使清潔劑於一相反於第一方向之方向 流向基板,因而在第一方向上第二清潔區塊設置比第一清 潔區塊前面。 在一實施例中,第一清潔區塊包括一缓衝空間係用 來容置清潔劑,還包括密孔區塊係使清潔劑經由緩衝空間 經由密孔區塊供給到基板上。 在一實施例中,缓衝空間係被兩侧牆、與側牆接觸 的上板和設置在侧牆的下部之密孔區塊所定義。 在一實施例中,第一清潔區塊包括用來容置清潔劑 的緩衝空間,還包括貫穿開口係用來使清潔劑從緩衝空間 經由貫穿開口供給於基板上。 在一實施例中,緩衝空間係被兩側牆、與側牆接觸 的上板和穿過側牆下部的貫穿開口。 在一實施例中,清潔區塊進一步包括氣幕區塊係分 別設置於第一和第二清潔區塊的邊緣部份,且氣幕區塊供 給氣體於基板上,因而提供氣幕於基板的表面上。 在一實施例中,氣幕區塊包括用來容置空氣的緩衝 201030879TW5810PA The substrate processing device for the above cleaning module. According to some embodiments of the inventive concept, a cleaning module includes a transmitter for transmitting a substrate in a first direction, and further comprising: a second direction disposed adjacent to the substrate and substantially perpendicular to the first direction Extended cleaning block. The cleaning block includes a first cleaning block for providing a cleaning agent on the substrate, and a second cleaning block disposed at an edge portion of the first cleaning block and for sucking the cleaning agent on the substrate. In one embodiment, the first cleaning block and the second cleaning block are disposed in a configuration that causes the cleaning agent to flow toward the substrate in a direction opposite to the first direction, thus the second cleaning zone in the first direction The block is set in front of the first cleaning block. In one embodiment, the first cleaning block includes a buffer space for receiving the cleaning agent, and the dense cell block is for supplying the cleaning agent to the substrate via the buffer space via the dense hole block. In one embodiment, the buffer space is defined by the side walls, the upper plate in contact with the side walls, and the dense hole blocks disposed in the lower portion of the side walls. In one embodiment, the first cleaning block includes a buffer space for receiving the cleaning agent, and the through opening is for supplying the cleaning agent from the buffer space to the substrate via the through opening. In one embodiment, the buffer space is surrounded by the side walls, the upper plate in contact with the side walls, and the through opening through the lower portion of the side walls. In one embodiment, the cleaning block further includes an air curtain block disposed at an edge portion of the first and second cleaning blocks, respectively, and the air curtain block supplies gas on the substrate, thereby providing a gas curtain on the substrate On the surface. In an embodiment, the air curtain block includes a buffer for accommodating air 201030879

1 ' J W^XIUFA 空間,還包括貫穿開口係用來使氣體從緩衝空間經由貫穿 開口供給於基板上。 rw貝芽 在實把例中,清潔區塊包括上清潔區塊係設置靠 Γ基板的上表面,而下清潔區塊係設置靠二t 表面,上區塊實質上具有和下區塊相同的結構。 Μ理明創新絲提出的—些實施例,提供一基 潔模组,裝置可包括在基板上執行清潔程序的清 潔U純㈣—騎科用來 ❹還包括第-清潔模婦用决户u 万门傳輸基板’ 設置在第一清潔區塊之邊板的上f共清潔劑’還包括 基板上的清潔劑,還包括乾;模組 程:及,括第—乾燥區塊係用來提供乾燥氣體於 二及置在第—乾燥區塊邊緣的第二乾燥區塊係 用來及入基板上的乾燥氣體。第一和第 毗鄰於基板且實質上在番古“ [鬼了叹置 在一實施例中,第一4贫、* 槿,访社错总户 和第一清潔區塊設置成一結 ^ , ^ ^ ^ 、第一方向之方向使清潔劑流向基 板’所以第二清潔區塊在 面 尼在第一方向上設置比第一方向前 貝貿上在垂直於第一方向的第 Λ 一眘始丨rU ^ 在一貫施例中 在一實施例中,第— 容置清潔劑,還包括貫穿開 穿開口供給於基板上。 清潔區塊包括緩衝空間係用來 口使清潔劑從緩衝空間經由貫 201030879The 1 ' J W^XIUFA space also includes a through opening for supplying gas from the buffer space to the substrate via the through opening. In the example of rw, the cleaning block includes an upper cleaning block disposed on the upper surface of the substrate, and a lower cleaning block disposed on the second surface, the upper block having substantially the same as the lower block. structure. Some embodiments of the invention provide a cleaning module, the device may include a cleaning process performed on the substrate, U pure (4) - riding a device for use, and also including a - cleaning model woman The 10,000-gate transfer substrate 'on the side of the first cleaning block' f-cleaning agent' also includes the cleaning agent on the substrate, and also includes the dry; the module process: and the first-drying block is used to provide The drying gas is applied to the second drying block disposed at the edge of the first drying block for the drying gas on the substrate. The first and the first adjacent to the substrate and substantially in the ancient "" Ghost sighs in an embodiment, the first 4 poor, * 槿, the visitor's total household and the first cleaning block are set to a knot ^, ^ ^ ^, the direction of the first direction causes the cleaning agent to flow to the substrate. Therefore, the second cleaning block is set in the first direction in the first direction, and the first direction is in the direction perpendicular to the first direction. rU ^ In a consistent embodiment, in an embodiment, the first receiving the cleaning agent further comprises supplying the substrate through the opening opening. The cleaning block comprises a buffer space for the mouth to pass the cleaning agent from the buffer space through the 201030879.

TW5810PATW5810PA

J I 在-實施例中,清潔模組進-步包括氣幕區 別設置於第-和第二清潔區塊的邊緣部份,且氣幕區塊提 供氣體於基板上,因而提供氣幕於基板的表面。 在-實施例中’第一和第二乾燥區塊設置成一壯 構,該結構係在一相反於第一方向之方向使乾燥空$泣: ㉒板,所以第二乾燥區塊在第一方向上設置比第:;:; 在-實施例中’乾燥模組進一步包括前 來在該乾燥程序之前執行先賴㈣,且設置】係用 區塊的前部並提供乾燥氣體於基板上,還 一乾烯 在乾燥程序之後的額外乾燥㈣4設置在 的後部並提供乾燥空氣於基板上。 ^燥區塊 乾坪部區塊包括緩衝空間係用來容置 ,亂’還包括貫牙開口使乾燥空氣由緩 穿開口供給到基板上。 ]左由貝 在-實施例中’前部區塊的貫穿開口包括上 口ϊ從緩衝空間垂直地向下延伸,以及下貫穿開σ連接: 開口’且在相反於第—方向之方向相對於上貫穿開In an embodiment, the cleaning module further includes: the air curtain is disposed at an edge portion of the first and second cleaning blocks, and the air curtain block provides gas on the substrate, thereby providing a gas curtain on the substrate surface. In the embodiment - the first and second drying blocks are arranged in a sturdy configuration, the structure is made to dry in a direction opposite to the first direction: 22 plates, so the second drying block is in the first side Upward setting ratio:;:; In the embodiment, the 'drying module further includes beforehand to perform the first step (4) before the drying process, and the setting is to use the front part of the block and provide dry gas on the substrate, An additional dry (four) 4 of dry olefin after the drying procedure is placed at the back and provides dry air on the substrate. Drying block The dry flat block includes a buffer space for accommodating, and the opening also includes a through-opening to allow dry air to be supplied to the substrate from the slow-opening opening. The left-handed-in the embodiment, the through-opening of the front block includes an upper port that extends vertically downward from the buffer space, and a lower through-opening σ connection: the opening 'and in a direction opposite to the first direction relative to Running through

高於前在部:====區塊供給的乾燥空氣 在一實施例中,第一乾择F 容置乾燥氣體,以及密孔區塊使包括緩衝空間係用來 密孔區塊供給到基板上。塊使細空氣從緩衝空間經由 在一實施例中,第一乾〜± 燥區塊包括緩衝空間係用來 201030879 1 1 wjoiur 八 容置乾燥氣體,以及貫穿開口使乾燥空氣從緩衝空間經由 貫穿開口供給到基板上。 在一實施例中,程序裝置進一步包括第二清潔模組 係執行第二清潔程序,並設置於清潔模組和乾燥模組之 間。第二清潔模組在基板上向上延伸,並包括射出喷嘴係 使清潔劑經由射出喷嘴喷於基板上。 在一實施例中,射出喷嘴包括第一和第二板,且貫 穿開口介於該對板子之間且於第二方向延伸,清潔劑經由 ❹ 射出喷嘴的貫穿開口供給於基板。 第一實施例中,第一供給管線係用來供給清潔溶液 於貫穿開口,而第二供給管線係用來提供氣體並連接板子 其中之一,使得清潔溶液和空氣在貫穿開口中互相混合, 因而形成清潔喷霧。 在一實施例中,射出喷嘴包括靠近基板的尖端部份 和遠離基板的頭部部份,且第一供給管線連接於板子的中 央部份,而第二供給管線連接對應於射出喷嘴之頭部部份 ® 的板子之上部,因此貫穿開口從頭部部份向下延伸到尖端 部份,且氣體在射出喷嘴的貫穿開口中,在清潔溶液之上 方供給。 在一實施例中,第一板包括凹槽部份,而第二板包 括突出物係用來置入到第一板的凹槽部份,因此貫穿開口 包括因凹槽部份和突出物造成的路徑改變。 在一實施例中,凹槽部份和突出物設置在板子中央 部份和末端部份之間,且板子的末端部份對應於射出喷嘴 的尖端部份。 201030879 1 W5»1UPA 、 ( 在一實施例中,貫穿開口在尖端部份周圍有第一寬 度,而具有大於第一見度的第二寬度係在頭部部份周圍, 清潔溶液和氣體在貫穿開口頭部部份周圍互相混合。 根據以上本發明創新概念之實施例,第一清潔區塊 係用來供給清潔劑於基板上,而第二清潔區塊係用來從美 板上吸入清潔劑,皆可安裝於清潔模組中,因此足夠^ 潔效率。此外’第-清潔模組可移除“足 進一步的,清潔溶液和氣體可在第_、主 合’因此形成-均勻的清潔喷霧。所 *基板上用以置換清潔溶液,減 二, 液之用量。 水π為基板的清潔溶 更進一步,第一乾燥區 板上,而第二乾燥區塊係用來供給乾燥氣體於基 安裝於乾燥模組中,因此乾燥氣體,皆可 此外’乾燥區塊可在實質上心==的乾燥效率。 向延伸,因此充分使乾燥模組規模^傳輸方向之寬度方 因此,程序裝置包括第—和莖_、主 •且,足夠可用來使規模變小並且^^潔模組以及乾燥 用量減少。 並且讓h潔劑和乾燥氣體的 =讓本發明之上述内容能更明 貧%例,並配合所附圖式,作詳細說明如下特舉 【實施方式】 請參考所_式,本發明之實施㈣更完整地揭露如 201030879Higher than the former portion: ==== dry air supplied by the block. In one embodiment, the first dry selection F accommodates the dry gas, and the dense-pore block allows the buffer space to be used for the dense-pore block supply. On the substrate. The block allows fine air to pass from the buffer space. In an embodiment, the first dry-drying block includes a buffer space for the 201030879 1 1 wjoiur eight-capacity drying gas, and the through-opening allows dry air to pass from the buffer space through the through opening Supply to the substrate. In one embodiment, the program device further includes a second cleaning module that performs the second cleaning process and is disposed between the cleaning module and the drying module. The second cleaning module extends upwardly on the substrate and includes an injection nozzle for spraying the cleaning agent onto the substrate via the injection nozzle. In one embodiment, the injection nozzle includes first and second plates, and the through opening is interposed between the pair of plates and extends in the second direction, and the cleaning agent is supplied to the substrate through the through opening of the ejection nozzle. In the first embodiment, the first supply line is for supplying the cleaning solution to the through opening, and the second supply line is for supplying the gas and connecting one of the plates such that the cleaning solution and the air are mixed with each other in the through opening, thereby Form a clean spray. In one embodiment, the injection nozzle includes a tip end portion adjacent to the substrate and a head portion remote from the substrate, and the first supply line is connected to a central portion of the board, and the second supply line is connected to the head of the injection nozzle. Part of the upper portion of the plate, so that the through opening extends downward from the head portion to the tip end portion, and the gas is supplied above the cleaning solution in the through opening of the injection nozzle. In an embodiment, the first plate includes a groove portion, and the second plate includes a protrusion for inserting into the groove portion of the first plate, so the through opening includes the groove portion and the protrusion The path changes. In one embodiment, the groove portion and the projection are disposed between the central portion and the end portion of the plate, and the end portion of the plate corresponds to the tip end portion of the injection nozzle. 201030879 1 W5»1UPA, (In one embodiment, the through opening has a first width around the tip portion, and the second width having a greater than first visibility is around the head portion, the cleaning solution and gas are throughout The open head portions are mixed with each other. According to the above innovative embodiment of the present invention, the first cleaning block is used to supply the cleaning agent on the substrate, and the second cleaning block is used to inhale the cleaning agent from the US board. Can be installed in the cleaning module, so it is enough to clean the efficiency. In addition, the 'first-cleaning module can be removed' further, the cleaning solution and gas can be formed in the _, the main combination - thus forming a uniform cleaning spray Fog. The substrate is used to replace the cleaning solution, minus the amount of liquid. The water π is the cleaning solution of the substrate further, the first drying zone plate, and the second drying block is used to supply the drying gas to the base. Installed in the drying module, so the drying gas can be further dried. The drying block can be extended in the center of the heart ==. The extension is sufficient to make the drying module scale the width of the transfer direction. Therefore, the program device Including the first and the stem_, the main, and enough, can be used to make the scale smaller and reduce the amount of drying and the amount of drying. And let the detergent and dry gas = make the above content of the present invention even more poor For example, in conjunction with the drawings, a detailed description will be given below. [Embodiment] Please refer to the formula, and the implementation of the present invention (4) is more fully disclosed as 201030879.

1 Γ I 下。然而,本發明可適用於各種不同形態,不應限定於所 揭露之實施例。本發明可具有多種不同之實施例,且不以 以下所述之實施例為限。以下所述之實施例係用以完整地 揭露本發明,使得本發明所屬技術領域中具有通常知識者 可完全了解本發明。為了更清楚說明本發明,圖層與區域 之尺寸及相關比例可能因明確繪示而誇大。 當出現「一元件位於於另一元件之上」或「一元件連 接或耦接於另一元件」之敘述時,一元件可直接配置於另 © —元件之上,或直接連接於另一元件,或有再一元件或中 間層介於兩者之間。相對地,當出現「一元件直接位於另 一元件之上」或「一元件直接連接於另一元件」之敘述時, 兩者間並無其他元件或中間層。相似之元件係以相似之符 號標示。此處所使用「且/或」之敘述係包括所列出項目之 全部任意組合。 可明瞭雖然術語第一、第二、第三…等可使用於描述 各種元件、成分、區域、階層和部分,這些術語不應限定 ® 於此。這些術語只是用來區別一元件、成分、區域、階層 和部分與另一元件、成分、區域、階層和部分。因此描述 於後的第一元件、成分、區域、階層和部分可為第二元件、 成分、區域、階層和部分而不會違反本發明的技術。 此處之空間相對用詞,例如是「下」或「上」或其他 類似用詞,可用於簡單地描述如所附圖式中所繪示之元 件,或某特徵與另一元件或特徵之關係。可了解的是,此 些空間相對用詞係包括其他方位之描述,並非受限於圖式 中之方向。舉例來說,當圖式中之裝置上下顛倒時,「一 9 201030879 ,,1 Γ I. However, the invention is applicable to a variety of different forms and should not be limited to the disclosed embodiments. The invention is susceptible to various embodiments and is not limited to the embodiments described herein. The embodiments described below are intended to provide a complete understanding of the invention, and may be fully understood by those of ordinary skill in the art. To more clearly illustrate the invention, the dimensions and associated proportions of layers and regions may be exaggerated by the explicit description. When the phrase "a component is placed on the other component" or "an element is connected or coupled to another component", one component can be directly disposed on another component or directly connected to another component. , or there is another element or intermediate layer between the two. In contrast, when the phrase "a component is directly above another component" or "a component is directly connected to another component", there are no other components or intermediate layers. Similar components are labeled with similar symbols. The phrase "and/or" used herein includes any and all combinations of the listed items. It will be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and sections, these terms should not be limited thereto. These terms are only used to distinguish one element, component, region, layer Therefore, the first element, component, region, layer, and portion described herein may be a second element, component, region, layer, and portion without departing from the invention. The space relative terms, such as "lower" or "upper" or the like, may be used to simply describe a component as depicted in the drawings, or a feature and another component or feature. relationship. It can be understood that these spatially relative terms are used to include descriptions of other orientations and are not limited by the orientation in the drawings. For example, when the device in the drawing is upside down, "a 9 201030879,,

i W^81UPA 元件位於另一元件或特徵之下」之敘述則變為「一元件位 於另一元件或特徵之上」。因此,「下」之用詞係包括「上」 和「下」兩種方位。元件可朝向其他方向(旋轉90度或 朝向其他方向),而此處使用之空間相對用詞係被對應地 解釋。 此處之用詞僅用以敘述本發明之實施例,並非用以限 制本發明。除非特別註明,否則此處所用之「一」、「此」 和「該」之單數形式之敘述,亦包括複數之形式。此處所 用之「包含」及「包括」所述之特徵、整數、步驟、操作、 元件或成份,並非排除其他之特徵、整數、步驟、操作、 元件、成份或其組合。 此處敘述之本發明之實施例係參照所附之剖面圖,且 剖面圖係繪示本發明之理想化之實施例(及中間結構)。 因此,例如是由製造技術且/或誤差所造成的與圖式之形狀 之差異係可預期的。本發明之實施例不應視為特定區域之 形狀的限制,而應包括例如是由製造所造成之形狀差異。 繪示於圖中之區域僅為示意圖,其形狀並非用以描繪裝置 之區域的實際形狀,且並非用以限制本發明之範圍。 除非另外定義,此處所使用之所有用詞(包括技術及 科學用詞),係與本發明所屬技術領域中具有通常知識者 所了解之意義相同。此外,除非特別定義,此處所使用之 普通字典所定義之用詞,當與相關技藝中之此用詞之意義 一致,而非指理想化或過度正式之意思。 以下將詳細解釋實施例以及所附屬的圖式。 第1圖係基板處理裝置的示意圖,包括與本發明精神 201030879 1 vv iv/rrv 相符的實施例之清潔模組。以下,基板處理裝置可被簡稱 為處理裝置。 參照第1圖,處理裝置2與本發明之實施例相符,可 清潔和乾燥基板4,像是平面顯示裝置(FPD)的玻璃基板。 在一實施例中,處理裝置2可包括在水平延伸的處理 腔體6,因此基板4可水平地經由處理腔體6内的複數個 滚輪傳輸。 在一實施例中,處理裝置2可包括第一清潔模組10, ® 係用來在基板4上執行第一清潔程序,第二清潔模組40 係用來在基板4上執行第二清潔程序,以及乾燥模組50 係用來在基板4上執行乾燥程序。處理腔體6可經由分隔 板8區分為第一清潔區域、第二清潔區域和乾燥區域,因 此第一清潔模組10、第二清潔模組40和乾燥模組50可被 分別配置在處理腔體的第一清潔區域、第二清潔區域和乾 燥區域。 在一實施例中,第一清潔模組10可包括第一傳輸器 ® 12、上清潔區塊200和下清潔區塊250。基板4可經由第 一傳輸器12在第一方向移動,且上清潔區塊200和下清 潔區塊250可在第一清潔模組10中,分別設置在基板4 的上方和下方。例如,上清潔區塊200和下清潔區塊250 實質上可在垂直於第一方向的第二方向延伸,並且可設置 靠近於基板4的上表面和下表面。 第2圖係第1圖第一清潔模組的第一傳輸器之俯視 圖,而第3圖係第2圖第一傳輸器之前視圖。 參照第2圖和第3圖,複數個旋轉轴102可在第一方 201030879 1 1 W3»iUKA 1 〇2 向配置,像是第2圖的x方向’ 在這樣的構造中旋轉軸方向 可互相以一間隙距離相隔。每該旋轉軸102 $在第一* ," 延伸,例如第2圖的y轴,在這樣的構造中旋轉袖$ 於上清潔區塊200和下清潔區塊250。複數個傳輸》衰輪 可在每該旋轉軸102上安裝’並支撐基板4 ° > # ,4崎营於處理 用來驅動旋轉軸102的驅動單元106 ’ f s又真 腔體6的外部。例如,驅動單元1〇6可包括馬達(未緣示) 係用來使轴轉動。 複數個第一磁性盤1〇8可設置在處理腔體6的侧牆的 外部表面,而複數個第二磁性盤110可設置在旋轉轴1〇2 的末端部分,該末端部分係指靠近處理腔體6的側牆的内 部表面,並且在剛提到的外部表面之對邊。 驅動單元106連接第一磁性盤108。特別地,面對# 理腔體6之侧牆的托架112提供複數個驅動軸U4,而= 一磁性盤108可分別與驅動軸114連接,因此篦 u乐一磁性盤 108會因驅動轴114旋轉而旋轉。從動滑輪il6可安參於 每一驅動軸114上’而可連接於驅動單元106之轴的^動 滑輪118可經由傳動帶120連接從動滑輪116。更進 複數個惰輪122可安裝於托架112且均一的張力可施=、’ 傳動帶120。 也加於 相應地’驅動單元106的旋轉動力可經主動滑輪ία、 從動滑輪116和傳動帶120傳輪到第一磁性盤,、 一磁性盤108可對其中心軸旋轉。因此,第_ ,且第 珩一磁性盤11〇 因磁力的關係隨著第一磁性盤108旋轉,且旋轉軸。 因第二磁性盤108旋轉而旋轉。 了 201030879 r 1 w^6iur/\ 在一實施例中,第一磁性盤108和第二磁性盤110可 包括複數個磁性群組(未繪示)。磁性群組沿著第一磁性盤 108和第二磁性盤110的圓周方向設置,且磁性群組的極 性在圓周方向可選擇性的改變。 處理腔體6之側牆的外部表面上可形成一凹槽124, 因此第一磁性盤108和第二磁性盤110之間的間隙距離會 減少。複數個支架126可被配置並且支撐處理腔體6内的 旋轉軸102。 ® 第4圖描繪第1圖中,上清潔區塊和下清潔區塊的截 面圖。 參照第4圖,上清潔區塊200實質上具有和下清潔區 塊250 —樣的結構。例如,上清潔區塊200可包括第一清 潔區塊210,係用來供給清潔劑於基板4,還包括第二清 潔區塊220係設置鄰近於第一清潔區塊210並且用來吸入 基板4上的清潔劑。清潔劑可包括清潔溶液以及清潔溶液 和其他氣體的混合物。 ® 在一實施例中,第一清潔區塊210和第二清潔區塊220 可設置在處理腔體6之内,這樣的結構使清潔劑以相反於 第一方向之方向流向該基板,其中第一方向係基板傳輸方 向。換言之,第二清潔區塊220沿著基板傳輸方向可設置 在第一清潔區塊210之前,因此沿著第一方向,第二清潔 區塊220和第一清潔區塊210照次序配置。 在一實施例中,清潔劑可包括去離子水。然而,上述 去離子水只是實施利用來說明清潔劑,並不因此而限制本 發明的理解。 13 201030879 ,, 1 W^81UPA , 因此,清潔劑可在相反於基板傳輸方向的方向,也就 是從第一清潔區塊210到第二清潔區塊220的方向,流向 基板4上,因此使用清潔劑可清潔基板4上的污染物。 在一實施例中,氣幕區塊230可分別配置在第一清潔 區塊210和第二清潔區塊220的邊緣部份。氣幕區塊230 可避免污染物殘留在區域内,其中該區域係指介於基板4 和第一清潔區塊210以及第二清潔區塊220之間。另外, 氣幕區塊230可引導在第一清潔區塊210和第二清潔區塊 之間的污染物,被吸入到第二清潔區塊220中使基板4乾 © 淨。 在一實施例中,第一清潔區塊210可包括兩第一侧牆> 212、第一上板214與第一側牆212接觸且密孔區塊216 介於第一側牆212之間的下方部份。例如,密孔區塊216 可包括密孔材料,像是碳和不銹鋼,可經由燒結程序形成。 因此,第一清潔區塊210可包括由第一側牆212、第 一上板214和密孔區塊216定義出來的第一緩衝空間 218。清潔劑可被容置在第一清潔區塊210的第一緩衝空 ⑬ 間218中,並經由密孔區塊216供給到基板4上。清潔劑 可因為第一緩衝空間218被均勻的供給到基板4上。 例如,密孔區塊216可具有大約介在0.1 um到5um直 徑的孔洞,且與溶液儲槽(未繪示)連接之供給管路可連接 至第一上板214。 在一實施例中,第二清潔區塊220可包括兩第二側牆 222、與第二侧牆接觸的第二上板224與第二緩衝空間 226,其中第二緩衝空間226係由第二側牆222和第二側 14 201030879 * i w jo iur/\ 牆222的上部之第二上板224所定義。第一貫穿開口 228 可貫穿第二側牆的下部並且可連接到第二緩衝空間226。 因此,基板4上經由清潔劑清理的污染物可經由第一貫穿 開口 228和清潔劑一起被吸入。 污染物和清潔劑可因第二緩衝空間226被均勻的經由 第一貫穿開口 228被吸入。幫浦模組(未繪示)和幫浦線可 進一步安裝於第二上板224用以吸入污染物和清潔劑。 當如上的實施例被揭露,第二清潔區塊220可包括第 ® 一貫穿開口 228用來吸入污染物和清潔劑,任何其他的構 造或裝置,所屬技術領域中具有通常知識者,當可作各種 之更動與潤飾,像是第一貫穿開口 228上位置的使用或連 接。例如,複數個孔洞可被使用在第一貫穿開口 228不同 的位置以吸入污染物和清潔劑。孔洞可以固定距離互相隔 開,且一下板可被進一步提供於第二清潔區塊220使孔洞 於其上形成。 在一實施例中,每一氣幕也可包括兩第三側牆232, ® 和第三側牆232接觸的第三上板234和一第三緩衝空間 236,其中第三緩衝空間係被第三侧牆232與在第三侧牆 232之上部的第三上板234所定義。第二貫穿開口 238可 貫穿第三側牆232的下部並且可連接到第三緩衝空間 236。因此,在基板4和上清潔區塊200之間因第二貫穿 開口 238形成一氣幕。 氣體可因氣幕區塊230的第三緩衝空間236使氣體均 勻供給在基板4上,且第三上板234可連接於一氣體供應 器(未繪示)。 15 201030879 (, 1 W^XIUPA , 下清潔區塊250實質上可具有和上述的上清潔區塊 200 —樣的結構,因此任何關於下清潔區塊的說明可被省 略。 對應地,清潔劑可快速地在上清潔區塊200和基板4 之間流向基板4的上表面,以及在下清潔區塊250和基板 4之間流向基板4的下表面,因此增加了基板4上的清潔 效率。換言之,清潔劑因從第一清潔區塊210提供至被第 二清潔區塊220吸入的流動路徑,使清潔劑處在柯恩達效 應(Coanda effect)下,因而污染物會有效地移除並清潔基板 ❿ 4 〇 根據本發明如上所述之實施例,基板4可在不使用刷 子的情況下,一開始就被上清潔區塊200和下清潔區塊250 給清潔乾淨,因此有效地縮小第一清潔模組10的規模。 第5圖係描繪第4圖修改的上清潔區塊和下清潔區塊 的截面圖。 參照第5圖,修改的上清潔區塊300可包括第一清潔 區塊310、第二清潔區塊320和氣幕區塊330。第二清潔 ❹ 區塊320和氣幕區塊330,實質上和第4圖所描述的第二 清潔區塊220和氣幕區塊230具有相同的結構。因此,之 後對於第二清潔區塊320和氣幕區塊330的詳細敘述可被 省略。 在一實施例中,第一清潔區塊310可包括兩側牆312、 與侧牆312接觸的上板314以及缓衝空間316,其中緩衝 空間316係被側牆312和在側牆312上部的上板314所定 義。貫穿開口 318可貫穿側牆的下部並且連接於緩衝空間 16 201030879 * 1 vv w»o i ur r\ 316。因此,清潔劑可經由貫穿開口 318供給於基板4上。 由於緩衝空間316,經由貫穿開口 318清潔劑可均勻 地供給於基板4上。上板314可連接於溶液儲槽(未繪示)。 第一清潔區塊310的貫穿開口 318可從緩衝空間316向下 延伸,且緩衝空間316中的清潔劑可在垂直於基板4的上 表面之方向,供給於該基板4。 修改的下清潔區塊350實質上可具有與修改的上清潔 區塊300相同的結構,因此任何進一步關於修改的下清潔 ❿ 區塊350的詳細描述都可被省略。 參照第1圖,第二清潔模組40可執行一第二清潔程 序在基板4上,而該基板4已經經過第一清潔模組10的 第一清潔程序。 在一實施例中,第二清潔模組40可包括第二傳輸器 42和射出喷嘴400,其中經由該射出喷嘴400,清潔劑可 射於基板4上。基板4可在第二清潔模組40中在第一方 向被第二傳輸器傳輸。第二傳輸器42可具有與第一傳輸 ❹ 器12相同的構造,因此任何進一步關於第二傳輸器42的 詳細描述可被省略。 第二清潔模組40可進一步包括第一淋浴喷頭44和第 二淋浴喷頭46,清潔劑可經由第一淋浴喷頭44和第二淋 浴喷頭46供給。射出喷嘴400可設置於第一淋浴喷頭44 和第二淋浴喷頭46之間。 第6圖係第1圖中射出喷嘴的截面圖,而第7圖係第 1圖中射出喷嘴的側視圖。 參照第6圖和第7圖,射出喷嘴400可包括兩板子, 17 201030879 TW5XJWA i ϊ 也就是第一板410和第二板420,並垂直於基板4的上表 面向上延伸。弟一板410和第二板420可互相連接,在這 樣的結構下,在第一板和第二板之間可形成貫穿開口 430。清潔劑可經由貫穿開口 43〇射於基板4上。射出喷 嘴400可包括靠近基板4的尖端部份T,和遠離該基板並 在尖端部份對邊的頭部區域Η。 更進一步,射出噴嘴400可包括介於第一板41〇和第 二板420之間的一密封群組4〇2,而該密封群組未詳細繪 示於第6圖’密封群組可避免清潔劑從射出噴嘴4〇〇漏出。❹ 溶液儲槽440可經由溶液供給管線442連接於第一板 410的中央部份。溶液供給管線442可穿越第—板以 延伸至貫穿開口 430。在本實施例中,複數個溶液供給管 線可連接於第一板410的中央部份。 氣體儲槽450可經由氣體供給管線452連接於射出喷 嘴400的頭部部份Η,且可提供氣體給射出噴嘴4〇〇。在 此實施例中,氣體供給管線452可連接第一板41〇的上 部,且可穿越第一板410延伸至貫穿開口 43〇,因此從氣❹ 體供給管線452提供至貫穿開口 43〇的氣體’可將溶液供 給管線442提供的清潔劑向下推到貫穿開口 43〇内。在本 實施例中,複數個氣體供給管線452可連接於第一板41〇 的上部。 在一實施例中,第一板410可包括一凹槽部份412, 而第二板420可包括一對應於該凹槽部份的突出物422。 凹槽部份412和突出物422分別可具有第一寬度wi和第 二寬度w2。當第一板410和第二板420互相連接,突出 18 .201030879 ' 1 VV IV/r/Λ. 物422可置入凹槽部份412,因此第一寬度wl可些微大 於第二寬度w2。由於因凹槽部份412和突出物422造成 貫穿開口 430之路徑改變,使清潔劑可均勻地射於基板4 上。 在一實施例中,凹槽部份412和突出物422造成的貫 穿開口 430之路徑改變後,貫穿開口 430可從射出喷嘴400 的尖端部份T向上延伸至頭部部份Η。特別地,貫穿開口 430的路徑改變可配置於第一板中央部份的下面,且連接 ❹ 於溶液供給管路442。換言之,凹槽部份412和突出物 422,可設置在第一板410的中間部份和射出喷嘴400的 尖端部份之間。 換言之,貫穿開口 430可包括第一貫穿開口 432,其 係可連接空氣供給管線452、還包括第二貫穿開口 434, 其係可連接溶液供給管線442、還包括第三貫穿開口 436, 係被凹槽部份412和突出物422所定義、還包括第四貫穿 開口 438,係被射出喷嘴400之尖端部份的第一板410和 ®第二板420所定義。 例如,清潔劑和氣體可在第二貫穿開口 434互相混 合。在本實施例中,第一貫穿開口 432、第三貫穿開口 436 和第四貫穿開口 438可具有一第一間隙,而第二貫穿開口 434可具有大於第一間隙的第二間隙。第一間隙的範圍大 約在0.05mm到0.1mm之間,而第二間隙的範圍大約在 0.1mm 到 1.0mm 之間。 清潔劑和氣體可互相混合,因清潔劑和空氣的壓力在 第二貫穿開口 434形成清潔喷霧。接著,第二貫穿開口 434 19 201030879The description of "i W^81UPA component is located under another component or feature" means "one component is above another component or feature". Therefore, the word "below" includes both "upper" and "lower". The elements can be oriented in other directions (rotated 90 degrees or toward other directions), and the space used herein is interpreted correspondingly to the words. The words used herein are merely illustrative of the embodiments of the invention and are not intended to limit the invention. The singular forms of "a", "an" and "the" are used in the s The features, integers, steps, operations, components or components described in the "comprising" and "comprising" are not intended to exclude other features, integers, steps, operations, components, components or combinations thereof. The embodiments of the present invention are described herein with reference to the accompanying drawings, and the accompanying drawings illustrate the preferred embodiments (and intermediate structures) of the invention. Thus, differences from the shapes of the drawings, for example, which are caused by manufacturing techniques and/or errors, are contemplated. The embodiments of the present invention should not be construed as limiting the shape of a particular region, but should include, for example, differences in the shape of the manufacture. The regions illustrated in the figures are only schematic and are not intended to depict the actual shapes of the regions of the device and are not intended to limit the scope of the invention. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning In addition, unless otherwise defined, the terms defined by the ordinary dictionary used herein are consistent with the meaning of the terms used in the related art, and are not intended to be idealized or overly formal. The embodiments and the associated drawings are explained in detail below. 1 is a schematic view of a substrate processing apparatus including a cleaning module of an embodiment consistent with the spirit of the present invention 201030879 1 vv iv/rrv. Hereinafter, the substrate processing apparatus may be simply referred to as a processing apparatus. Referring to Fig. 1, the processing apparatus 2 conforms to the embodiment of the present invention, and the substrate 4 such as a glass substrate of a flat display device (FPD) can be cleaned and dried. In an embodiment, the processing device 2 can include a processing chamber 6 that extends horizontally such that the substrate 4 can be transported horizontally via a plurality of rollers within the processing chamber 6. In an embodiment, the processing device 2 may include a first cleaning module 10 for performing a first cleaning process on the substrate 4, and a second cleaning module 40 for performing a second cleaning process on the substrate 4. And the drying module 50 is used to perform a drying process on the substrate 4. The processing chamber 6 can be divided into a first cleaning area, a second cleaning area and a drying area via the partitioning plate 8, so that the first cleaning module 10, the second cleaning module 40 and the drying module 50 can be respectively configured for processing a first cleaning zone, a second cleaning zone, and a drying zone of the cavity. In an embodiment, the first cleaning module 10 can include a first conveyor ® 12, an upper cleaning block 200, and a lower cleaning block 250. The substrate 4 is movable in the first direction via the first conveyor 12, and the upper cleaning block 200 and the lower cleaning block 250 are disposed in the first cleaning module 10, respectively, above and below the substrate 4. For example, the upper cleaning block 200 and the lower cleaning block 250 may extend substantially in a second direction perpendicular to the first direction and may be disposed adjacent to the upper and lower surfaces of the substrate 4. Fig. 2 is a plan view of the first conveyor of the first cleaning module of Fig. 1, and Fig. 3 is a front view of the first conveyor of Fig. 2. Referring to FIGS. 2 and 3, a plurality of rotating shafts 102 may be disposed in the first side 201030879 1 1 W3»iUKA 1 〇2 direction, such as the x direction of FIG. 2, in which the rotating shaft directions may mutually Separated by a gap distance. Each of the axes of rotation 102$ extends at a first *, ", such as the y-axis of FIG. 2, in such a configuration that the sleeves are rotated over the upper cleaning block 200 and the lower cleaning block 250. A plurality of transmissions may be mounted on each of the rotating shafts 102 and support the substrate 4° >#,4, in the processing of the driving unit 106' f s for driving the rotating shaft 102 and the outside of the true cavity 6. For example, the drive unit 〇6 may include a motor (not shown) for rotating the shaft. A plurality of first magnetic disks 1〇8 may be disposed on an outer surface of the side wall of the processing chamber 6, and a plurality of second magnetic disks 110 may be disposed at an end portion of the rotating shaft 1〇2, the end portion being referred to close to the processing The inner surface of the side wall of the cavity 6 and the opposite side of the outer surface just mentioned. The driving unit 106 is connected to the first magnetic disk 108. In particular, the bracket 112 facing the side wall of the cavity 6 provides a plurality of drive shafts U4, and = a magnetic disk 108 can be respectively coupled to the drive shaft 114, so that the magnetic disk 108 is driven by the drive shaft 114 rotates and rotates. The driven pulley il6 can be mounted on each of the drive shafts 114. The movable pulley 118, which can be coupled to the shaft of the drive unit 106, can be coupled to the driven pulley 116 via the belt 120. Further, the plurality of idlers 122 can be mounted to the bracket 112 and a uniform tension can be applied to the drive belt 120. The rotational power that is also applied to the ' drive unit 106 can be transmitted to the first magnetic disk via the active pulley ία, the driven pulley 116, and the belt 120, and a magnetic disk 108 can be rotated about its central axis. Therefore, the _th and the first magnetic disk 11? are rotated by the first magnetic disk 108 due to the magnetic force, and the axis is rotated. The second magnetic disk 108 rotates due to the rotation. 201030879 r 1 w^6iur/\ In an embodiment, the first magnetic disk 108 and the second magnetic disk 110 may include a plurality of magnetic groups (not shown). The magnetic group is disposed along the circumferential direction of the first magnetic disk 108 and the second magnetic disk 110, and the polarity of the magnetic group is selectively changeable in the circumferential direction. A groove 124 may be formed on the outer surface of the side wall of the processing chamber 6, so that the gap distance between the first magnetic disk 108 and the second magnetic disk 110 may be reduced. A plurality of brackets 126 can be configured and support the rotating shaft 102 within the processing chamber 6. ® Figure 4 depicts a cross-sectional view of the upper and lower cleaning blocks in Figure 1. Referring to Fig. 4, the upper cleaning block 200 has substantially the same structure as the lower cleaning block 250. For example, the upper cleaning block 200 may include a first cleaning block 210 for supplying a cleaning agent to the substrate 4, and a second cleaning block 220 disposed adjacent to the first cleaning block 210 and for drawing the substrate 4 The cleaner on it. The cleaning agent may include a cleaning solution and a mixture of the cleaning solution and other gases. In one embodiment, the first cleaning block 210 and the second cleaning block 220 may be disposed within the processing chamber 6, such that the cleaning agent flows toward the substrate in a direction opposite to the first direction, wherein One direction is the substrate transfer direction. In other words, the second cleaning block 220 may be disposed before the first cleaning block 210 along the substrate transport direction, and thus the second cleaning block 220 and the first cleaning block 210 are arranged in order along the first direction. In an embodiment, the cleaning agent can include deionized water. However, the above deionized water is only used to illustrate the cleaning agent, and thus does not limit the understanding of the present invention. 13 201030879 ,, 1 W^81UPA , therefore, the cleaning agent can flow to the substrate 4 in a direction opposite to the substrate transport direction, that is, from the first cleaning block 210 to the second cleaning block 220, thus using cleaning The agent cleans the contaminants on the substrate 4. In an embodiment, the air curtain block 230 may be disposed at an edge portion of the first cleaning block 210 and the second cleaning block 220, respectively. The air curtain block 230 can prevent contaminants from remaining in the area, wherein the area is between the substrate 4 and the first cleaning block 210 and the second cleaning block 220. Additionally, the air curtain block 230 can direct contaminants between the first cleaning block 210 and the second cleaning block and be drawn into the second cleaning block 220 to dry the substrate 4. In an embodiment, the first cleaning block 210 may include two first side walls > 212, the first upper plate 214 is in contact with the first side wall 212, and the dense hole block 216 is between the first side walls 212. The lower part. For example, the dense cell block 216 can comprise a dense pore material, such as carbon and stainless steel, which can be formed via a sintering process. Accordingly, the first cleaning block 210 can include a first buffer space 218 defined by the first side wall 212, the first upper plate 214, and the dense hole block 216. The cleaning agent may be housed in the first buffer space 218 of the first cleaning block 210 and supplied to the substrate 4 via the dense hole block 216. The cleaning agent can be uniformly supplied onto the substrate 4 because the first buffer space 218 is. For example, the dense cell block 216 can have a hole having a diameter of approximately 0.1 um to 5 um, and a supply line connected to a solution reservoir (not shown) can be coupled to the first upper plate 214. In an embodiment, the second cleaning block 220 may include two second side walls 222, a second upper plate 224 and a second buffer space 226 in contact with the second side wall, wherein the second buffer space 226 is second. Side wall 222 and second side 14 201030879 * iw jo iur / \ The second upper plate 224 of the upper portion of wall 222 is defined. The first through opening 228 can extend through a lower portion of the second side wall and can be coupled to the second buffer space 226. Therefore, contaminants cleaned on the substrate 4 via the cleaning agent can be drawn in together via the first through opening 228 and the cleaning agent. The contaminants and detergent may be inhaled uniformly through the first through opening 228 due to the second buffer space 226. A pump module (not shown) and a pump line can be further mounted to the second upper plate 224 for inhaling contaminants and detergents. When the above embodiment is disclosed, the second cleaning block 220 can include a first through opening 228 for inhaling contaminants and detergents, any other configuration or device, which is generally known in the art. Various changes and retouchments, such as the use or connection of the first through opening 228. For example, a plurality of holes can be used at different locations of the first through opening 228 to draw in contaminants and detergent. The holes may be spaced apart from each other by a fixed distance, and the lower plate may be further provided to the second cleaning block 220 to form a hole therein. In an embodiment, each air curtain may also include two third side walls 232, a third upper plate 234 that contacts the third side wall 232, and a third buffer space 236, wherein the third buffer space is third. The side wall 232 is defined by a third upper plate 234 at an upper portion of the third side wall 232. The second through opening 238 may extend through a lower portion of the third side wall 232 and may be coupled to the third buffer space 236. Therefore, a gas curtain is formed between the substrate 4 and the upper cleaning block 200 by the second through opening 238. The gas may be uniformly supplied to the substrate 4 by the third buffer space 236 of the air curtain block 230, and the third upper plate 234 may be connected to a gas supply (not shown). 15 201030879 (, 1 W^XIUPA, the lower cleaning block 250 may have substantially the same structure as the upper cleaning block 200 described above, so any description about the lower cleaning block may be omitted. Correspondingly, the cleaning agent may Rapidly flowing between the upper cleaning block 200 and the substrate 4 toward the upper surface of the substrate 4, and between the lower cleaning block 250 and the substrate 4 to the lower surface of the substrate 4, thereby increasing the cleaning efficiency on the substrate 4. In other words, The cleaning agent is disposed under the Coanda effect due to the flow path supplied from the first cleaning block 210 to the second cleaning block 220, so that the contaminant effectively removes and cleans the substrate. ❿ 4 〇 According to the embodiment of the present invention as described above, the substrate 4 can be cleaned by the upper cleaning block 200 and the lower cleaning block 250 from the beginning without using a brush, thereby effectively reducing the first cleaning The scale of the module 10. Figure 5 is a cross-sectional view depicting the upper cleaning block and the lower cleaning block modified in Figure 4. Referring to Figure 5, the modified upper cleaning block 300 may include a first cleaning block 310, Second cleaning area 320 and air curtain block 330. The second cleaning block 320 and the air curtain block 330 have substantially the same structure as the second cleaning block 220 and the air curtain block 230 described in Fig. 4. Therefore, afterwards The detailed description of the two cleaning blocks 320 and the air curtain block 330 may be omitted. In an embodiment, the first cleaning block 310 may include side walls 312, an upper plate 314 in contact with the side walls 312, and a buffer space 316. The buffer space 316 is defined by the side wall 312 and the upper plate 314 at the upper portion of the side wall 312. The through opening 318 can extend through the lower portion of the side wall and is coupled to the buffer space 16 201030879 * 1 vv w»oi ur r\ 316. Therefore, the cleaning agent can be supplied to the substrate 4 via the through opening 318. Due to the buffer space 316, the cleaning agent can be uniformly supplied to the substrate 4 via the through opening 318. The upper plate 314 can be connected to a solution reservoir (not shown). The through opening 318 of the first cleaning block 310 may extend downward from the buffer space 316, and the cleaning agent in the buffer space 316 may be supplied to the substrate 4 in a direction perpendicular to the upper surface of the substrate 4. Modified lower cleaning area Block 350 is substantially There is the same structure as the modified upper cleaning block 300, so any further description about the modified lower cleaning block 350 can be omitted. Referring to Figure 1, the second cleaning module 40 can perform a second cleaning. The program is on the substrate 4, and the substrate 4 has passed the first cleaning process of the first cleaning module 10. In an embodiment, the second cleaning module 40 can include a second transmitter 42 and an injection nozzle 400, via The injection nozzle 400 can be sprayed onto the substrate 4. The substrate 4 can be transported by the second conveyor in the first direction in the second cleaning module 40. The second transmitter 42 can have the same configuration as the first transmitter 12, so any further description about the second transmitter 42 can be omitted. The second cleaning module 40 can further include a first shower head 44 and a second shower head 46, and the cleaning agent can be supplied via the first shower head 44 and the second shower head 46. The injection nozzle 400 may be disposed between the first shower head 44 and the second shower head 46. Fig. 6 is a cross-sectional view of the injection nozzle in Fig. 1, and Fig. 7 is a side view of the injection nozzle in Fig. 1. Referring to Figures 6 and 7, the injection nozzle 400 may include two plates, 17 201030879 TW5XJWA i , i.e., the first plate 410 and the second plate 420, extending perpendicularly to the upper surface of the substrate 4. The first plate 410 and the second plate 420 may be connected to each other. Under such a structure, a through opening 430 may be formed between the first plate and the second plate. The cleaning agent can be sprayed onto the substrate 4 via the through opening 43. The ejection nozzle 400 may include a tip end portion T adjacent to the substrate 4, and a head region away from the substrate and opposite the tip end portion. Further, the injection nozzle 400 may include a sealing group 4〇2 between the first plate 41〇 and the second plate 420, and the sealing group is not shown in detail in FIG. The detergent leaks from the injection nozzle 4〇〇. The solution reservoir 440 can be coupled to the central portion of the first plate 410 via a solution supply line 442. Solution supply line 442 can pass through the first plate to extend through through opening 430. In the present embodiment, a plurality of solution supply lines may be connected to the central portion of the first plate 410. The gas reservoir 450 can be coupled to the head portion of the injection nozzle 400 via a gas supply line 452 and can provide gas to the injection nozzle 4A. In this embodiment, the gas supply line 452 can be coupled to the upper portion of the first plate 41A and can extend through the first plate 410 to the through opening 43A, thereby providing gas from the gas supply line 452 to the through opening 43〇. 'The cleaning agent supplied from the solution supply line 442 can be pushed down into the through opening 43A. In the present embodiment, a plurality of gas supply lines 452 may be coupled to the upper portion of the first plate 41''. In an embodiment, the first plate 410 can include a recessed portion 412, and the second plate 420 can include a protrusion 422 corresponding to the recessed portion. The groove portion 412 and the protrusion 422 may have a first width wi and a second width w2, respectively. When the first plate 410 and the second plate 420 are connected to each other, the protrusion 18 .201030879 ' 1 VV IV/r/Λ. The object 422 can be placed in the groove portion 412, so the first width w1 can be slightly larger than the second width w2. Since the path of the through opening 430 is changed due to the groove portion 412 and the projection 422, the cleaning agent can be uniformly incident on the substrate 4. In one embodiment, after the path of the through opening 430 caused by the recessed portion 412 and the projection 422 is changed, the through opening 430 can extend upward from the tip end portion T of the ejection nozzle 400 to the head portion. In particular, the path change through the opening 430 can be disposed below the central portion of the first plate and connected to the solution supply line 442. In other words, the groove portion 412 and the projection 422 may be disposed between the intermediate portion of the first plate 410 and the tip end portion of the injection nozzle 400. In other words, the through opening 430 may include a first through opening 432 that is connectable to the air supply line 452 and further includes a second through opening 434 that is connectable to the solution supply line 442 and further includes a third through opening 436 that is recessed The groove portion 412 and the protrusion 422 are defined, and further include a fourth through opening 438 defined by the first plate 410 and the second plate 420 which are projected from the tip end portion of the nozzle 400. For example, the cleaning agent and the gas may be mixed with each other at the second through opening 434. In the present embodiment, the first through opening 432, the third through opening 436, and the fourth through opening 438 may have a first gap, and the second through opening 434 may have a second gap larger than the first gap. The first gap has a range of approximately 0.05 mm to 0.1 mm, and the second gap has a range of approximately 0.1 mm to 1.0 mm. The cleaning agent and the gas may be mixed with each other, and a cleaning spray is formed at the second through opening 434 by the pressure of the cleaning agent and the air. Next, the second through opening 434 19 201030879

TW5810PA 中的清潔喷霧經過第三貫穿開口 436和第四貫穿開口 438 後,均勻地射於基板4上。The cleaning spray in the TW5810PA passes through the third through opening 436 and the fourth through opening 438 and is uniformly incident on the substrate 4.

根據本發明修改的實施例,經由複數個溶液供給管線 442供給的清潔劑’和經由複數個氣體供給管線452供給 的氣體’在第二貫穿開口 434混合,因此形成均勻的清潔 喷霧。接著’清潔喷霧可經由第三貫穿開口 436和第四貫 穿開口 438射於基板4上,其中第三貫穿開口 436係被凹 槽部份412和突出物422所定義’因此增進於基板4上清 潔劑的均勻度。 再次參照第1圖,乾燥模組50可包括第三傳輸器52, 上乾燥區塊500和下乾燥區塊55〇。第三傳輸器52實質上 可具有與第一傳輸器12的相同構造,因此任何進一步關 於第二傳輸器52的進一步描述可被省略。 上乾燥區塊500可配置於被第三傳輸器52傳輸的基 J.J-» Λ 上方,因此基板4的上表面可經由上乾燥區塊5〇〇乾 燥。上乾燥區塊5〇〇實質上可在垂直於基板4傳輸方向之 ❹ ^ 方向的第二方向延伸。在本實施例中,上乾燥區塊5〇〇 可°又置紕鄰於基板4的上表面。 輪。下乾燥區塊550可設置於基板4的下方並經由第二 52傳輪,因此基板4的下表面可經由下乾燥區塊5: i在本實施例中,下乾燥區塊550本質上可具有和 =燥區塊5〇〇 一樣的結構。下乾燥區塊55〇也可在第二 三,該第二方向係實質上垂直於基板4傳輸方向之 方向。在本實施例中,下乾燥區塊55〇可設置毗鄰於 4的下表面且平行於上乾燥區塊5〇〇。 20 201030879 1 wj〇iur/\ 第8圖係第〗圖中上乾燥區塊和下乾燥區塊之截面 ^照第8圖’上乾燥區塊5⑼實質上 έ區塊550 一樣的結構。例如,上乾燥區域可包^ 乾㈣塊510,係用來供給乾燥氣體於基板4,還包^第 ^::二20係設置吼鄰於第一乾燥區塊並且用來吸入 基板4上的乾燥氣體。 _可_4^施例中,第一乾燥區塊51G和第二乾燥區塊520 二:2處理腔體6之中’其構造為乾燥空氣可在相反於 ::-方向流向基板’而該第一方向係基板傳輸的 署2、S之’第二乾燥區塊520可沿著基板傳輸方向設 置於第一乾燥區塊5H)之前,因此第二乾燥區塊52〇和第 乾燥區塊510就沿著第一方向連續且順序的設置。 在一實施例中,乾燥氣體可包括溫度為1〇度c的氣 體然而,上述的氣體只是用來說明本實施例的清潔劑, 並不用於限制於本發明之理解。例如,惰性氣體像是 V可用來置換氣體。 ,、 因此,乾燥氣體可在一方向流向基板4,該方向相反 於基板傳輸方向,也就是從第一乾燥區塊51〇到第二乾燥 區塊520,因此基板4可被乾燥氣體充分乾燥。此外,殘 留在基板4的上表面的微小污染物可被乾燥氣體充分的移 除。 在一實施例中,後部區塊540可設置於第一乾燥區塊 510的背部,因此基板4可因後部區塊540喷出的乾燥氣 體’被額外乾燥。前部區塊530設置於第二乾燥區塊52〇 21 201030879 t , 的前部,因此基板4可先被經過前部區塊530的乾燥氣體 給乾燥。所以,基板4上的殘留的清潔劑像是去離子水可 先被乾燥,所以清潔劑可避免傳入介於上乾燥區塊500和 基板4之間的空間。換言之,在開始上乾燥區塊500的乾 燥程序之前,清潔劑可先被從基板上移除。 在一實施例中,第一乾燥區塊510可包括兩第一侧牆 512、與第一側牆512接觸的第一上板514和密孔區塊 516,其中該密孔區塊係介於第一側板512之間的下方。 例如,密孔區塊516可包含密孔材料像是碳和不銹鋼,可 ❹ 經由燒結程序形成。 因此,第一乾燥區塊510可包括第一緩衝空間518, 係被第一側牆512,第一上板514和密孔區塊516所定義。 乾燥氣體可被容置在第一乾燥區塊510的第一緩衝空間 518,且可經由密孔區塊516供給於基板4。因此,乾燥氣 體因第一緩衝空間518可被均勻地供給於基板4上。 例如,密孔區塊516可具有貫穿開口,其直徑範圍大 約介在O.lum到5um之間,且與乾燥氣體儲槽(未繪示)連 ❹ 接之氣體供給管線可連接至第一上板514。 在一實施例中,第二乾燥區塊520可包括兩第二側 牆522,第二上板524與第二侧牆522接觸,且第二緩衝 空間526係被第二側牆522和在第二側牆522之上部的第 二上板524所定義。第一貫穿開口 528可穿越第二侧牆522 的下部且可連接第二緩衝空間526。因此,乾燥氣體可經 由第一貫穿開口 528被吸入。 22 201030879 * ι >ν *>〇 iur/Ί 基板4上的乾燥空氣因第二緩衝空間526可經由第一 貫穿開口 528均勻地被吸入。真空模組(未繪示)和真空管 線可進一步安裝於第二上板524以吸入基板4上的乾燥空 氣。 當如上的實施例被揭露,第二乾燥區塊520可包括第 一貫穿開口 528用來吸入乾燥空氣,任何其他的構造或裝 置,所屬技術領域中具有通常知識者,當可作各種之更動 φ 與潤飾,像是第一貫穿開口 528上位置的使用或連接。例 如,複數個孔洞可被使用在第一貫穿開口 528不同的位置 以吸入乾燥空氣。孔洞可以固定距離互相隔開,且一下板 可被進一步提供於第二清潔區塊520使孔洞於其上形成。 在一實施例中,前部區塊530可包括兩第三側牆532, 與第三側牆532接觸的第三上板534和第三緩衝空間 536,其中該第三緩衝空間536係被第三側牆532和在第 三側牆532之上部的第三上板534所定義。第二貫穿開口 ® 538可穿過第三側牆532的下部,且可連接於第三緩衝空 間 536。 乾燥氣體因前部區塊530的第三緩衝空間536,可均 勻供給乾燥氣體於基板4,而第三上板534可連接於乾燥 氣體儲槽。 在本實施例中,第二貫穿開口 538可包括上貫穿開口 538a,係從第三緩衝空間536垂直地向下延伸,還包括下 貫穿開口 538b,係連接於上貫穿開口 538a且相對於上貫 23 201030879 TW5S10PA 穿開口 538a傾斜於和基板傳輸方向相反之方向。例如, 下貫穿開口 538b可具有一相對於基板4的上表面且大約 介於60度到80度之間的傾斜角。 在一實施例中’後部區塊540可包括兩 。估兩第四侧牆542、 與第四侧牆542接觸的第四上板544以及第四緩衝空間 546,其中該第四緩衝空間546係被第四側騰542和:第 四侧牆542之上部的第四上板544所定義。 ~我。弟二貫穿開口 548可貫穿第四側牆542的下部且可連接於第四緩衝空間 546 ❹ 乾燥空氣因後部區塊540的第四緩衝空間546可均句 ^供給於基板4上,且第四上板可連接於乾燥氣體儲槽。 :部區塊54㈣第三貫穿開口 548可從第四緩衝空間546 垂直地向下延伸,因此乾燥空氣可垂直地供給於基板4上。 ◎ 在-修改的實施例’從後部輯54。供給的乾燥氣體 (額外的乾燥氣體)係不同於第—乾燥輯提供的乾燥氣 f。例如,供給於基板上的額外賴氣體,其溫度高於基 的氣體。在本實施例中’氣體和氮氣可供給於基板4 上的溫度大約為20度C,而額外的乾燥氣體其溫度大約 度C目此執額外$乾燥*序於基板*並控制基板 4的溫度。 另-修改的實施例中,後部區塊54〇可包括在第四側 牆之下部的密孔區塊(未%示)用來置換第三貫穿開口 24 201030879 548。因此,經過後部區塊 被供給於基板4上。 540的密孔區塊,乾燥氣體可 下乾燥區塊55〇|新, ,^ )()實質上可具有和如上所述之上乾煉區 塊500 —樣的結構,田 得因此任何關於下乾燥區塊550的評細 描述可被省略。 上乾燥區塊5〇〇和下乾燥區塊55〇可被基板4區隔, 且間隙距離大約為30um到100um之間。在本實施例中, ©介於基板4與乾燥區塊5〇〇寿口 55〇的間隙距離大約術田。 介於基板4與乾燥區塊5〇〇* HO的間隙距離可依據乾燥 效率與基板4上污染物的第二清潔效率來決定。 相應的’本實施例中介於基板4與乾燥區塊5〇〇和$ 的間隙距離可小於傳統介於空氣刀和基板之間的 離,因此乾燥空氣可快速地流向介於基板4與 ’、距 和550的空間,因而增進基板4上的乾燥效率。^塊S00 ❿燥氣體因從第一乾燥區塊510供給然後從第二外,乾 520被吸入的流動路徑,使乾躁空氣處在柯區塊 (Coanda effect)下,因而污染物可有效地移除並二、效應 4。 、μ潔基板 第9圖係第8圖 截面圖。 中修改的上清潔區塊和下清潔區_ 參照第9圖,修改的上乾燥區塊6〇〇可包括第 區塊610、第二乾燥區塊62〇、前部區塊63〇和後部η。乾燦 640。第二乾燥區塊、前部區塊63〇和後部區塊Ρ區塊 4G實質 25 201030879 5 , 1W^81UPA * 上和在第8圖詳細說明的第二清潔區塊520、前部區塊530 和後部區塊540具有一樣的結構。因此,任何關於第二乾 燥區塊620、前部區塊630、後部區塊640的進一部說明 在之後可被省略。 在一實施例中,第一乾燥區塊610可包括兩侧牆612、 與侧牆612接觸的上板614和緩衝空間616,其中該緩衝 空間616係被側牆612和在側牆612之上部的上板614所 定義。貫穿開口 618可貫穿側牆612的下部且可連接於緩 ❹ 衝空間616。因此,乾燥空氣可經由貫穿開口 618供給於 基板4上。 乾燥空氣因缓衝空間616可經由貫穿開口 618供給於 基板4上。上板614可連接乾燥空氣儲槽(未繪示)。第一 乾燥區塊610的貫穿開口 618可從緩衝空間616垂直地向 下延伸,且緩衝空間616中的乾燥空氣可於垂直於基板4 的上表面之一方向供給於基板4。 ❹ 修改的下清潔區塊650實質上可具有與修改的上清潔 區塊一樣的結構,因此任何關於下清潔區塊650的進一部 說明可被省略。 根據本發明某些實施例的概念,用來供給清潔劑於基 板的第一清潔區塊,和用來從基板吸入清潔劑的第二清潔 區塊可安裝於第一清潔模組,因此充分地增進清潔模組的 清潔效率。此外,第一清潔區塊可因刷子的移除而充分地 26 201030879According to a modified embodiment of the present invention, the detergent ' supplied by the plurality of solution supply lines 442 and the gas supplied via the plurality of gas supply lines 452 are mixed at the second through opening 434, thus forming a uniform cleaning spray. Then, the cleaning spray can be incident on the substrate 4 via the third through opening 436 and the fourth through opening 438, wherein the third through opening 436 is defined by the groove portion 412 and the protrusion 422, thus being promoted on the substrate 4. The uniformity of the detergent. Referring again to FIG. 1, the drying module 50 can include a third conveyor 52, an upper drying block 500 and a lower drying block 55A. The third transmitter 52 may have substantially the same configuration as the first transmitter 12, and thus any further description about the second transmitter 52 may be omitted. The upper drying block 500 may be disposed above the base J.J-» 传输 transported by the third conveyor 52, so that the upper surface of the substrate 4 may be dried via the upper drying block 5〇〇. The upper drying block 5 〇〇 extends substantially in a second direction perpendicular to the ❹ ^ direction of the substrate 4 transport direction. In the present embodiment, the upper drying block 5 is disposed adjacent to the upper surface of the substrate 4. wheel. The lower drying block 550 may be disposed under the substrate 4 and passed through the second 52-passing wheel, so the lower surface of the substrate 4 may pass through the lower drying block 5: i In the present embodiment, the lower drying block 550 may have substantially The same structure as the = dry block. The lower drying block 55A may also be in the second third, the second direction being substantially perpendicular to the direction of transport of the substrate 4. In the present embodiment, the lower drying block 55A may be disposed adjacent to the lower surface of the fourth surface and parallel to the upper drying block 5''. 20 201030879 1 wj〇iur/\ Fig. 8 is a cross section of the upper drying block and the lower drying block in Fig. 8 . The drying block 5 (9) in Fig. 8 is substantially the same structure as the block 550. For example, the upper drying zone may include a dry (four) block 510 for supplying dry gas to the substrate 4, and further comprising a second: 20 series disposed adjacent to the first drying block and used for drawing into the substrate 4. Dry gas. In the embodiment, the first drying block 51G and the second drying block 520 are: 2 in the processing chamber 6 'which is configured such that dry air can flow toward the substrate in the opposite direction ::- The second drying block 520 of the first direction S substrate 2 can be disposed before the first drying block 5H along the substrate transport direction, and thus the second drying block 52 and the drying block 510 It is continuous and sequential in the first direction. In one embodiment, the drying gas may include a gas having a temperature of 1 degree c. However, the above gas is merely used to illustrate the cleaning agent of the present embodiment and is not intended to limit the understanding of the present invention. For example, an inert gas like V can be used to displace the gas. Therefore, the drying gas can flow to the substrate 4 in a direction opposite to the substrate transport direction, that is, from the first drying block 51 to the second drying block 520, so that the substrate 4 can be sufficiently dried by the drying gas. Further, minute contaminants remaining on the upper surface of the substrate 4 can be sufficiently removed by the drying gas. In an embodiment, the rear block 540 can be disposed on the back of the first drying block 510 so that the substrate 4 can be additionally dried by the dry gas 'ejected from the rear block 540. The front block 530 is disposed at the front of the second drying block 52 〇 21 201030879 t, so that the substrate 4 can be dried first by the drying gas passing through the front block 530. Therefore, the residual detergent on the substrate 4, such as deionized water, can be dried first, so that the detergent can be prevented from being introduced into the space between the upper drying block 500 and the substrate 4. In other words, the cleaning agent can be removed from the substrate prior to beginning the drying process of drying block 500. In an embodiment, the first drying block 510 can include two first side walls 512, a first upper plate 514 and a dense hole block 516 that are in contact with the first side wall 512, wherein the dense hole block is Below the first side plate 512. For example, the dense cell block 516 can comprise a dense pore material such as carbon and stainless steel that can be formed via a sintering process. Accordingly, the first drying block 510 can include a first buffer space 518 defined by the first side wall 512, the first upper plate 514, and the dense hole block 516. The drying gas may be housed in the first buffer space 518 of the first drying block 510 and may be supplied to the substrate 4 via the dense hole block 516. Therefore, the dry gas can be uniformly supplied onto the substrate 4 due to the first buffer space 518. For example, the dense hole block 516 may have a through opening having a diameter ranging from about O. lum to 5 um, and the gas supply line connected to the dry gas storage tank (not shown) may be connected to the first upper plate. 514. In an embodiment, the second drying block 520 can include two second side walls 522, the second upper plate 524 is in contact with the second side wall 522, and the second buffer space 526 is bounded by the second side wall 522 and The second upper plate 524 is defined by the upper portion of the two side walls 522. The first through opening 528 can pass through a lower portion of the second side wall 522 and can connect the second buffer space 526. Therefore, the drying gas can be drawn in through the first through opening 528. 22 201030879 * ι >ν *>〇 iur/Ί The dry air on the substrate 4 can be uniformly sucked through the first through opening 528 by the second buffer space 526. A vacuum module (not shown) and a vacuum line may be further mounted to the second upper plate 524 to draw dry air from the substrate 4. When the above embodiment is disclosed, the second drying block 520 can include a first through opening 528 for drawing in dry air, any other configuration or device, as is conventional in the art, when various changes can be made. With the retouch, like the use or connection of the position on the first through opening 528. For example, a plurality of holes can be used at different locations of the first through opening 528 to draw in dry air. The holes may be spaced apart from each other by a fixed distance, and the lower plate may be further provided to the second cleaning block 520 to form a hole thereon. In an embodiment, the front block 530 can include two third side walls 532, a third upper plate 534 and a third buffer space 536 that are in contact with the third side wall 532, wherein the third buffer space 536 is The three side walls 532 and the third upper plate 534 above the third side wall 532 are defined. The second through opening ® 538 can pass through the lower portion of the third side wall 532 and can be coupled to the third buffer space 536. The drying gas can uniformly supply dry gas to the substrate 4 due to the third buffer space 536 of the front block 530, and the third upper plate 534 can be connected to the dry gas storage tank. In the present embodiment, the second through opening 538 may include an upper through opening 538a extending vertically downward from the third buffer space 536, and further including a lower through opening 538b connected to the upper through opening 538a and opposite to the upper end 23 201030879 The TW5S10PA through opening 538a is inclined in a direction opposite to the substrate transfer direction. For example, the lower through opening 538b may have an inclined angle with respect to the upper surface of the substrate 4 and between about 60 and 80 degrees. In an embodiment, the rear block 540 can include two. The fourth fourth side wall 542, the fourth upper plate 544 and the fourth buffer space 546 are in contact with the fourth side wall 542, wherein the fourth buffer space 546 is surrounded by the fourth side 542 and the fourth side wall 542. The upper fourth upper plate 544 is defined. ~ me. The second through opening 548 can penetrate the lower portion of the fourth side wall 542 and can be connected to the fourth buffer space 546 干燥 The dry air can be uniformly supplied to the substrate 4 by the fourth buffer space 546 of the rear block 540, and the fourth The upper plate can be connected to a dry gas reservoir. The portion block 54 (four) third through opening 548 may extend vertically downward from the fourth buffer space 546, so that dry air may be vertically supplied onto the substrate 4. ◎ In the modified embodiment, from the rear section 54. The dry gas supplied (extra dry gas) is different from the dry gas f provided by the first dry series. For example, an additional gas supplied to the substrate has a temperature higher than that of the base gas. In the present embodiment, 'the temperature at which gas and nitrogen can be supplied to the substrate 4 is about 20 degrees C, and the additional dry gas has a temperature of about C. This is an additional dry* sequence on the substrate* and controls the temperature of the substrate 4. . In a further modified embodiment, the rear block 54A may include a close-hole block (not shown) below the fourth side wall for replacing the third through opening 24 201030879 548. Therefore, it is supplied to the substrate 4 through the rear block. The dense pore block of 540, the drying gas can be dried under the block 55 〇 | new, , ^ ) () can have substantially the same structure as the above-mentioned dry block 500, as described above, The detailed description of the drying block 550 can be omitted. The upper drying block 5 〇〇 and the lower drying block 55 〇 can be separated by the substrate 4, and the gap distance is between about 30 um and 100 um. In the present embodiment, the gap distance between the substrate 4 and the drying block 5 〇〇 Shoukou 55 大约 is approximately the field. The gap distance between the substrate 4 and the drying block 5 〇〇 * HO can be determined depending on the drying efficiency and the second cleaning efficiency of the contaminants on the substrate 4. Correspondingly, the gap distance between the substrate 4 and the drying block 5〇〇 and $ in this embodiment can be smaller than that between the conventional air knife and the substrate, so that the dry air can flow rapidly between the substrate 4 and the ', The distance from the space of 550, thus improving the drying efficiency on the substrate 4. ^Block S00 The flow path from which the dry gas is supplied from the first drying block 510 and then from the second, dry 520, so that the dry air is under the Coanda effect, so that the pollutants can be effectively Remove and second, effect 4. , μ clean substrate Figure 9 is a cross-sectional view of Figure 8. Medium modified upper cleaning block and lower cleaning area _ Referring to FIG. 9, the modified upper drying block 6〇〇 may include a first block 610, a second drying block 62〇, a front block 63〇, and a rear portion η . Dry can 640. The second cleaning block, the front block 63〇, and the rear block block 4G substantially 25 201030879 5 , 1W^81UPA * and the second cleaning block 520 and the front block 530 described in detail in FIG. It has the same structure as the rear block 540. Therefore, any further explanation regarding the second drying block 620, the front block 630, and the rear block 640 can be omitted later. In an embodiment, the first drying block 610 can include a side wall 612, an upper plate 614 that contacts the side wall 612, and a buffer space 616, wherein the buffer space 616 is the side wall 612 and the upper side wall 612 The upper board 614 is defined. The through opening 618 can extend through the lower portion of the side wall 612 and can be coupled to the buffer space 616. Therefore, dry air can be supplied to the substrate 4 via the through opening 618. Dry air may be supplied to the substrate 4 via the through opening 618 due to the buffer space 616. The upper plate 614 can be connected to a dry air reservoir (not shown). The through opening 618 of the first drying block 610 may extend vertically downward from the buffer space 616, and the dry air in the buffer space 616 may be supplied to the substrate 4 in a direction perpendicular to one of the upper surfaces of the substrate 4.修改 The modified lower cleaning block 650 may have substantially the same structure as the modified upper cleaning block, so any further description regarding the lower cleaning block 650 may be omitted. According to a concept of some embodiments of the present invention, a first cleaning block for supplying a cleaning agent to a substrate, and a second cleaning block for drawing a cleaning agent from the substrate may be mounted to the first cleaning module, thus being sufficiently Improve the cleaning efficiency of the cleaning module. In addition, the first cleaning block can be sufficiently removed by the removal of the brush 26 201030879

- I W551UPA 變小。 更進一步’清潔劑和氣體可在第二清潔模組混合,形 成均勻的清潔喷霧。因此,清潔喷霧可用來置換清潔劑來 供給於基板’因而減少用來清潔基板的清潔劑用量。- I W551UPA becomes smaller. Further, the detergent and gas can be mixed in the second cleaning module to form a uniform cleaning spray. Therefore, the cleaning spray can be used to displace the cleaning agent to be supplied to the substrate. Thus, the amount of the cleaning agent used to clean the substrate is reduced.

更進一步’用來供給乾燥氣體於上的第一乾燥區塊, 和用來從基板吸入乾燥空氣的第二乾燥區塊可安裝於乾 燥模組,因而充足地增進乾燥模組的乾燥效率。此外,乾 燥模組可在實質上垂直於基板傳輸方向的該基板之寬邊 方向延伸,因而可使乾燥模組充分地規模變小。 因此’程序裝置包括第—和第二清潔模組,且乾燥模 組可充分雜小,並且清_和乾㈣氣_量可降低。、 上述實施例的說明並不限制本發明的· 說明少數實施例,本發明所屬 々、斛雖…、、已經 者,在不脫離本發明之精;^彳術7貞域巾具有通常知識 與潤飾。因此,所有在本發明&圍内,當可作各種之更動 括在本發明内。在申請專利範^精砷和範圍内的修改皆包 時,手段功能用語係用以涵内’當執行列舉的功能 括本文中所描述結構的均等物于該功此的結構,不但包 此,對上述不同實施例的了解P亦包括其等效結構。因 限制本發明的理解,同樣地,以及對於實施例的揭露並不 他實施例皆包含在附加申請專^改且揭露的實施例以及其 保護範圍當視後附之申請專圍内。因此,本發明之 *範圍所界定者為準。 27 201030879Further, the first drying block for supplying the dry gas and the second drying block for drawing the dry air from the substrate can be mounted to the drying module, thereby sufficiently improving the drying efficiency of the drying module. Further, the drying module can be extended in the width direction of the substrate substantially perpendicular to the substrate transport direction, so that the drying module can be sufficiently reduced in size. Therefore, the program device includes the first and second cleaning modules, and the dry mold group can be sufficiently small, and the amount of clear_and dry (four) gas can be reduced. The description of the above embodiments does not limit the invention. A few embodiments are described, and the present invention belongs to the present invention, and the present invention does not deviate from the essence of the present invention; Retouching. Accordingly, all of the various modifications are possible within the scope of the invention. When applying for patents and modifications within the scope of the application, the means of function means are used to include the structure of the functions described herein, including the equivalents of the structures described herein, not only. The knowledge P of the different embodiments described above also includes its equivalent structure. The disclosure of the present invention is not limited to the scope of the invention, and the embodiments of the invention are not limited to the scope of the application and the scope of the disclosure. Therefore, the scope defined by the scope of the present invention shall prevail. 27 201030879

J W3SIWA 【圖式簡單說明】 ^ ! ^鱗示包括—依據本發明之—實施例的清潔模 ,,且之基板處理裝置之示意圖。 .第2圖係繪示第1圖中第-清潔裝置之第-傳輸器之 俯視圖。 第3圖係緣示第2圖中第一傳輪器之前視圖。 第4圖係緣示第!圖中上清潔區塊和下清潔區塊的截 面圖。 第5圖係繪不第4圖中修改之上清潔區塊和下清潔區 塊的截面圖。 第6圖係緣示第1圖中射出喷嘴之截面圖。 第7圖係繪示第1圖中射出喷嘴的側視圖。 第8圖係緣示第1圖中上乾燥區塊和下乾燥區塊的截 面圖。以及 第9圖係繪示第8圖中修改之上清潔區塊和下清潔區 塊之戴面圖。 【主要元件符號說明】 2 : 處理裝置 4 : 基板 6 : 處理腔體 8 : 分隔板 10 :第一清潔模組 12 :第一傳輸器 40 :第二清潔模組 42 :第二傳輸器 44 :第一淋浴喷頭 28 201030879 * 1 w-Joiur/ΛJ W3SIWA [Simple Description of the Drawings] ^ ! ^ The scale includes a cleaning mold according to the embodiment of the present invention, and a schematic diagram of the substrate processing apparatus. Fig. 2 is a plan view showing the first conveyor of the first cleaning device of Fig. 1. Figure 3 is a front view of the first wheel former in Figure 2. Figure 4 shows the relationship! A cross-sectional view of the upper and lower cleaning blocks in the figure. Figure 5 is a cross-sectional view of the cleaning block and the lower cleaning block, not modified in Figure 4. Fig. 6 is a cross-sectional view showing the injection nozzle in Fig. 1 . Fig. 7 is a side view showing the injection nozzle in Fig. 1. Figure 8 is a cross-sectional view showing the upper dry block and the lower dry block in Fig. 1. And Fig. 9 is a perspective view showing the modification of the upper cleaning block and the lower cleaning block in Fig. 8. [Main component symbol description] 2 : Processing device 4 : Substrate 6 : Processing chamber 8 : Partition 10 : First cleaning module 12 : First transmitter 40 : Second cleaning module 42 : Second transmitter 44 : First shower head 28 201030879 * 1 w-Joiur/Λ

46 :第二淋浴喷頭 50 :乾燥模組 52 :第三傳輸器 102 :旋轉轴 104 :傳輸滾輪 106 :驅動單元 108 :第一磁性盤 110 :第二磁性盤 112 :托架 114 :驅動軸 116 :從動滑輪 118 :主動滑輪 120 :傳動帶 122 :惰輪 124 :凹槽 126 :支架 200、300 :上清潔區塊 210、310 :第一清潔區塊 212、512 :第一側牆 214、514 :第一上板 216、516 :密孔區塊 218、518 :第一緩衝空間 220、320 :第二清潔區塊 222、522 :第二侧牆 224、524 :第二上板 226、526 :第二緩衝空間 228、432、528 :第一貫穿開口 230、330 :氣幕區塊 232、532 :第三側牆 234、534 ··第三上板 29 20103087946: second shower head 50: drying module 52: third conveyor 102: rotating shaft 104: transport roller 106: drive unit 108: first magnetic disk 110: second magnetic disk 112: bracket 114: drive shaft 116: driven pulley 118: active pulley 120: transmission belt 122: idler 124: groove 126: bracket 200, 300: upper cleaning block 210, 310: first cleaning block 212, 512: first side wall 214, 514 : first upper plate 216, 516: dense hole blocks 218, 518: first buffer space 220, 320: second cleaning block 222, 522: second side wall 224, 524: second upper plate 226, 526: Second buffer space 228, 432, 528: first through opening 230, 330: air curtain block 232, 532: third side wall 234, 534 · · third upper plate 29 201030879

1 W^SIUKA 236、536 :第三缓衝空間 238、434、538 :第二貫穿開口 250、350 :下清潔區塊 312、612 :側牆 314、614 :上板 316、616 :緩衝空間 318、430、618 :貫穿開口 400 :射出喷嘴 402 :密封群組 410 :第一板 412 :凹槽部份 420 :第二板 422 :突出物 436、548 :第三貫穿開口 438 :第四貫穿開口 440 :溶液儲槽 442 :溶液供給管線 450 :氣體儲槽 452 :氣體供給管線 500、600 :上乾燥區塊 510、610 :第一乾燥區塊 520、620 :第二乾燥區塊 530、630 :前部區塊 538a :上貫穿開口 538b :下貫穿開口 540、640 :後部區塊 542 :第四侧牆 544 :第四上板 546 :第四缓衝空間 550、650 :下乾燥區塊1 W^SIUKA 236, 536: third buffer space 238, 434, 538: second through opening 250, 350: lower cleaning block 312, 612: side wall 314, 614: upper plate 316, 616: buffer space 318 430, 618: through opening 400: injection nozzle 402: sealing group 410: first plate 412: groove portion 420: second plate 422: protrusions 436, 548: third through opening 438: fourth through opening 440: solution storage tank 442: solution supply line 450: gas storage tank 452: gas supply line 500, 600: upper drying block 510, 610: first drying block 520, 620: second drying block 530, 630: Front block 538a: upper through opening 538b: lower through opening 540, 640: rear block 542: fourth side wall 544: fourth upper plate 546: fourth buffer space 550, 650: lower drying block

Claims (1)

201030879 1. Vf -/U 1 VI 七、申請專利範圍: 1. 一種清潔模組’用來清潔一基板,包括: 一傳輸器,用來在第一方向傳輸該基板;以及 一清潔區塊’係設置毗鄰於該基板,且在一第二方向 延伸,而該第二方向本質上垂直於該第一方向,該清潔區 塊包括: 一第一清潔區塊,係用來提供一清潔劑在該基板 上;及 ❿ 一第二清潔區塊,係設置於該第一清潔區塊的一 邊緣部份,並用來吸入該基板上的該清潔劑。 2. 如申請專利範圍第1項所述之該清潔模組,其中該 第一清潔區塊和該第二清潔區塊係排列設置以使該清潔 劑在相反於該第一方向的一方向流向該基板上,使得在該 第方向上,5亥第一清潔區塊設置於該第一清潔區塊之 前。 3. 如申请專利範圍第1項所述之該清潔模組,其中該 ®第-清潔區塊包括: 一緩衝空間’係用來容置該清潔劑;以及 一密孔區塊,該清潔劑經由該密孔區塊從該緩衝空間 供給於該基板上。 I 4. 如申睛專利範圍第3項所述之該清潔模組,其中該 緩衝空間係由兩侧牆、與該些側牆接觸之一上板、以及設 置於該些側牆的一下部之該密孔區塊所定義。 5. 如申請專利範圍第1項所述之該清潔模經,其中該 第一清潔區塊包括: 31 201030879 ., 1 WM51UKA , 一緩衝空間,係用來容置該清潔劑;以及 一貫穿開口,該清潔劑經由該貫穿開口從該缓衝空間 供給於該基板上。 6. 如申請專利範圍第5項所述之該清潔模組,其中該 緩衝空間係由兩側牆、與該些側牆接觸之一上板、以及設 置於該些側牆的一下部之該貫穿開口所定義。 7. 如申請專利範圍第1項所述之該清潔模組,其中該 清潔區塊進一步包括: 複數個氣幕區塊,分別設置於該些第一清潔區塊和該 ❹ 些第二清潔區塊的複數個邊緣部份,該氣幕區塊供給氣體 於該基板上,藉以供給一氣幕於該基板之一表面上。 8. 如申請專利範圍第7項所述之該清潔模組,其中該 氣幕區塊包括: 一緩衝空間,係用來容置該氣體;以及 一貫穿開口,該氣體經由該貫穿開口從該缓衝空間供 給於該基板上。 9. 如申請專利範圍第1項所述之該清潔模組,其中該 ❹ 清潔區塊包括: 一上清潔區塊,設置靠近於該基板的一上部表面;以 及 一下清潔區塊,設置靠近於該基板的一下部表面,該 上清潔區塊和該下清潔區塊的構造實質上相同。 10. —種基板處理裝置,包括: 一清潔模組,在該基板上執行一清潔程序且包括: 一第一傳輸器,係用來在一第一方向傳輸該基 32 201030879 ' - 1 w j〇iwr/\ 板; 一第一清潔區塊’係用來供給一清潔劑於該基板 上;及 一第二清潔區塊,係設置於該第一清潔區塊的一 邊緣部份且吸入該基板上的該清潔劑;該第一和第二清潔 區塊設置毗鄰於該基板,且在一第二方向延伸,該第二方 向本質上垂直於該第一方向;以及 一乾燥模組,係在該基板上執行一乾燥程序且包括: ⑩ 一第一乾燥區塊,係用來供給一乾燥氣體於該基 板上;及 一第二乾燥區塊,係設置於該第一乾燥區塊的一 邊緣部份,且吸入該基板上的該乾燥空氣。 11.如申請專利範圍第10項所述之該裝置,其中該第 一和第二清潔區塊係排列設置以使該清潔劑在相反於該 第一方向的一方向流向該基板上,使得在該第一方向上, 該第二清潔區塊設置於該第一清潔區塊之前。 ® 12.如申請專利範圍第10項所述之該裝置,其中該第 一清潔區塊包括: 一緩衝空間,係用來容置該清潔劑;以及 一密孔區塊,該清潔劑經由該密孔區塊從該緩衝空間 供給於該基板上。 13.如申請專利範圍第10項所述之該裝置,其中該第 一清潔區塊包括: 一緩衝空間,係用來容置該清潔劑;以及 一貫穿開口,該清潔劑經由該貫穿開口從該緩衝空間 33 201030879 (, TW581UPA 、 供給於該基板上。 14. 如申請專利範圍第10項所述之該裝置,其中該清 潔模組進一步包括: 複數個氣幕區塊,分別設置於該些第一清潔區塊和該 些第二清潔區塊的複數個邊緣部份,該氣幕區塊供給氣體 於該基板上,藉以供給一氣幕於該基板之一表面上。 15. 如申請專利範圍第10項所述之該裝置,其中該些 第一和第二乾燥模組係排列設置以使該氣體在相反於該 第一方向的一方向上流向於該基板上,使得在該第一方向 ❹ 上,該第二乾燥區塊設置於該第一乾燥區塊之前。 16. 如申請專利範圍第15項所述之該裝置,其中該乾 燥模組進一步包括: 一前部區塊,係在該乾燥程序前,執行一初步的乾燥 程序,且該初步的乾燥程序設置於該第二乾燥區塊的一前 部,並供給該乾燥氣體於該基板上;以及 一後部區塊,係在該乾燥程序後,執行一額外的乾燥 程序,且該額外的乾燥程序設置於該第一乾燥區塊的一後 〇 部,並供給該乾燥氣體於該基板上。 17. 如申請專利範圍第16項所述之該裝置,其中該前 部區塊包括: 一緩衝空間,係用來容置該乾燥氣體;以及 一貫穿開口,該乾燥氣體經由該貫穿開口從該緩衝空 間供給於該基板上。 18. 如申請專利範圍第17項所述之該裝置,其中該前 部區塊的該貫穿開口包括: 34 201030879 ' 1 vv i vr /λ 一上貫穿開口,係從該緩衝空間垂直地向下延伸;以 及 一下貫穿開口,係連接該上部貫穿開口,且在相反於 該第一方向之一方向相對於該上部貫穿開口傾斜。 19. 如申請專利範圍第16項所述之該裝置,其中從該 後部區塊供給的該乾燥氣體的溫度,比從該前部區塊供給 的該乾餘氣體的溫度退要南。 20. 如申請專利範圍第10項所述之該裝置,其中該第 Φ 一乾燥區塊包括: 一緩衝空間,係用來容置該乾燥氣體;以及 一密孔區塊,該乾燥氣體經由該密孔區塊從該缓衝空 間供給於該基板上。 21. 如申請專利範圍第10項所述之該裝置,其中該第 一乾燥區塊包括: 一緩衝空間,係用來容置該乾燥氣體;以及 一貫穿開口,該乾燥氣體經由該貫穿開口從該缓衝空 •間供給於該基板上。 22. 如申請專利範圍第10項所述之該裝置,進一步包 括: 另一清潔模組,係執行另一清潔程序且設置於該清潔 模組和該乾燥模組之間,該另一清潔模組在該基板上方向 上延伸,並包括一射出喷嘴,經由該射出喷嘴使該清潔劑 喷於該基板上。 23. 如申請專利範圍第22項所述之該裝置,其中該射 出喷嘴包括: 35 201030879 TW5810PA 一第一板和一第二板;以及 -貫穿開口 ’係在該第一板和該第二板之間並在該 伸,該清潔劑經由該射出噴嘴的該貫穿開口供 24. 如申請專利範圍第23項所述之該裝置,苴 G 一=管線’係用來提供-清潔溶液於該貫穿開/口之内,· 且、中-第二供給管線,連接該第—板或第 =氣體’使得該清潔賴與城體㈣ 混合’形成-清;时霧。 25. ”請專利範圍帛24項所述 出噴嘴包括: /、甲及射 一尖端部份,係在該基板的近端;以及 接談部份’係在該基板的遠端且該第—供給管線連 該射Λ出喷中央部份’而該第二供給管線連接相應於 穿門口^ 頭部部份之該卜板的-上部,所以該貫 Ο 射:喷ϊ:ΓΐΓ下延伸至該尖端部份,且該氣體在該 =嘴的該貫穿開口之中餘在該清潔溶液上方。 一板包括如巾請專利範圍第25項所述之該裝置,其中該第 一凹槽部份; 且该第二板包括: 該穿透二出t ’係用來置人該第一板的該凹槽部份,使得 徑改變Y 口匕括因為該凹槽部份和該突出物造成的一路 27·如申請專利範圍第26項所述之該裝置,其中該凹 36 201030879 * Λ. 9Ψ I \Jl 槽部份係設置於該第—板的中㈣ 該突出物係設置於該第二 ^末=部分之間,且 間,該第一板的末端部分及Μ央广和束端部分之 該射出噴嘴的該尖端部份。 的末端部份係相對於 认如申請專利範圍第25項所述之該裝置 =口繼端部份周圍具有-第-寬度,且在頭:二; 氣體寬度的一第二寬度,該清潔溶劑和該 φ轧體在貝牙開口中的頭部部份周圍互相混合。201030879 1. Vf - / U 1 VI VII. Patent Application Range: 1. A cleaning module 'used to clean a substrate, comprising: a transmitter for transmitting the substrate in a first direction; and a cleaning block' Adjacent to the substrate, and extending in a second direction, the second direction being substantially perpendicular to the first direction, the cleaning block comprising: a first cleaning block for providing a cleaning agent And a second cleaning block disposed on an edge portion of the first cleaning block for sucking the cleaning agent on the substrate. 2. The cleaning module of claim 1, wherein the first cleaning block and the second cleaning block are arranged such that the cleaning agent flows in a direction opposite to the first direction. On the substrate, in the first direction, a first cleaning block is disposed before the first cleaning block. 3. The cleaning module of claim 1, wherein the ®-cleaning block comprises: a buffer space for accommodating the cleaning agent; and a dense-pore block, the cleaning agent The dense hole block is supplied from the buffer space to the substrate. The cleaning module of claim 3, wherein the buffer space is a side wall, an upper plate contacting the side walls, and a lower portion disposed on the side walls The dense hole block is defined. 5. The cleaning mold according to claim 1, wherein the first cleaning block comprises: 31 201030879 ., 1 WM51UKA, a buffer space for accommodating the cleaning agent; and a through opening The cleaning agent is supplied from the buffer space to the substrate via the through opening. 6. The cleaning module of claim 5, wherein the buffer space is formed by two side walls, an upper plate contacting the side walls, and a lower portion disposed on the side walls. Defined through the opening. 7. The cleaning module of claim 1, wherein the cleaning block further comprises: a plurality of air curtain blocks respectively disposed in the first cleaning block and the second cleaning areas a plurality of edge portions of the block, the gas curtain block supplying gas to the substrate to supply an air curtain to a surface of the substrate. 8. The cleaning module of claim 7, wherein the air curtain block comprises: a buffer space for accommodating the gas; and a through opening through which the gas passes from the through hole A buffer space is supplied to the substrate. 9. The cleaning module of claim 1, wherein the cleaning block comprises: an upper cleaning block disposed adjacent to an upper surface of the substrate; and a lower cleaning block disposed adjacent to The lower surface of the substrate, the upper cleaning block and the lower cleaning block are substantially identical in construction. 10. A substrate processing apparatus comprising: a cleaning module, performing a cleaning process on the substrate and comprising: a first transmitter for transmitting the base 32 in a first direction 201030879 ' - 1 wj〇 Iwr/\ board; a first cleaning block is for supplying a cleaning agent on the substrate; and a second cleaning block is disposed at an edge portion of the first cleaning block and sucking the substrate The cleaning agent; the first and second cleaning blocks are disposed adjacent to the substrate and extend in a second direction, the second direction is substantially perpendicular to the first direction; and a drying module is attached Performing a drying process on the substrate and comprising: a first drying block for supplying a dry gas to the substrate; and a second drying block disposed at an edge of the first drying block Partially, and sucking the dry air on the substrate. 11. The device of claim 10, wherein the first and second cleaning blocks are arranged such that the cleaning agent flows onto the substrate in a direction opposite to the first direction such that In the first direction, the second cleaning block is disposed before the first cleaning block. The device of claim 10, wherein the first cleaning block comprises: a buffer space for accommodating the cleaning agent; and a dense hole block through which the cleaning agent passes A dense hole block is supplied from the buffer space to the substrate. 13. The device of claim 10, wherein the first cleaning block comprises: a buffer space for receiving the cleaning agent; and a through opening through which the cleaning agent passes from the through opening The device of claim 10, wherein the cleaning module further comprises: a plurality of air curtain blocks, respectively disposed on the buffer space 33 201030879 (the TW581UPA is provided on the substrate. a plurality of edge portions of the first cleaning block and the second cleaning blocks, the gas curtain block supplying gas on the substrate, thereby supplying a gas curtain on a surface of the substrate. The device of claim 10, wherein the first and second drying modules are arranged such that the gas flows upward on the substrate in a direction opposite to the first direction, such that the first direction is The second drying block is disposed in front of the first drying block. The device of claim 15, wherein the drying module further comprises: a front block, tied to Before the drying process, a preliminary drying process is performed, and the preliminary drying process is disposed at a front portion of the second drying block and supplies the drying gas to the substrate; and a rear block is dried After the program, an additional drying process is performed, and the additional drying process is disposed on a rear crotch portion of the first drying block and supplies the drying gas to the substrate. 17. As claimed in claim 16 The device, wherein the front block comprises: a buffer space for accommodating the dry gas; and a through opening through which the dry gas is supplied from the buffer space to the substrate. The device of claim 17, wherein the through opening of the front block comprises: 34 201030879 ' 1 vv i vr /λ an upper through opening extending vertically downward from the buffer space; And a through opening that connects the upper through opening and is inclined with respect to the upper through opening in a direction opposite to the first direction. 19. Patent Application No. 16 The device of the invention, wherein the temperature of the dry gas supplied from the rear block is greater than the temperature of the dry residual gas supplied from the front block. 20. According to claim 10 The device, wherein the Φ-dry block comprises: a buffer space for accommodating the dry gas; and a dense-pore block, the dry gas is supplied from the buffer space via the dense-pore block The device of claim 10, wherein the first drying block comprises: a buffer space for accommodating the drying gas; and a through opening, the drying gas The substrate is supplied from the buffer space through the through opening. 22. The device of claim 10, further comprising: another cleaning module that performs another cleaning procedure and is disposed between the cleaning module and the drying module, the other cleaning module The group extends in the direction of the substrate and includes an ejection nozzle through which the cleaning agent is sprayed onto the substrate. 23. The device of claim 22, wherein the injection nozzle comprises: 35 201030879 TW5810PA a first plate and a second plate; and - a through opening is attached to the first plate and the second plate Between and in the extension, the cleaning agent is supplied through the through opening of the injection nozzle. 24. The device according to claim 23, wherein the 管线G==line is used to provide a cleaning solution. Within the opening/opening, ·, and the medium-second supply line, connecting the first plate or the third gas 'to make the cleaning and mixing with the city body (four) 'form-clear; time fog. 25. "Please refer to paragraph 24 of the patent scope for nozzles including: /, A and a tip portion at the proximal end of the substrate; and the interface portion is attached to the distal end of the substrate and the first The supply line is connected to the central portion of the ejection jet and the second supply line is connected to the upper portion of the plate corresponding to the head portion of the door opening, so the spurting: sneezing: the squat extends to the a tip portion, and the gas remaining above the cleaning solution in the through opening of the mouth; a plate comprising the device of claim 25, wherein the first groove portion; And the second plate comprises: the penetrating two-out t' is used for placing the groove portion of the first plate, so that the diameter change Y port includes all the way caused by the groove portion and the protrusion 27. The device of claim 26, wherein the recess 36 201030879 * Λ. 9Ψ I \Jl slot portion is disposed in the first plate (four) the protrusion is disposed in the second ^ Between the end=parts, and between, the end portion of the first plate and the injection jet of the central portion and the bundle end portion The end portion of the tip portion is relative to the device described in claim 25, wherein the device has a -th-width around the mouth portion and a head: two; a gas width The width is such that the cleaning solvent and the φ rolling body are mixed with each other around the head portion in the opening of the teeth. 3737
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