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TW201038150A - Methods for manufacturing heat dissipation and insulated composite substrate and heat dissipation and insulated substrate thereof - Google Patents

Methods for manufacturing heat dissipation and insulated composite substrate and heat dissipation and insulated substrate thereof Download PDF

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Publication number
TW201038150A
TW201038150A TW98111335A TW98111335A TW201038150A TW 201038150 A TW201038150 A TW 201038150A TW 98111335 A TW98111335 A TW 98111335A TW 98111335 A TW98111335 A TW 98111335A TW 201038150 A TW201038150 A TW 201038150A
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TW
Taiwan
Prior art keywords
thermally conductive
preparing
substrate according
insulating substrate
conductive insulating
Prior art date
Application number
TW98111335A
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Chinese (zh)
Other versions
TWI402004B (en
Inventor
David Shau-Chew Wang
Yi-An Sha
Kuo-Hsun Chen
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Polytronics Technology Corp
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Priority to TW98111335A priority Critical patent/TWI402004B/en
Publication of TW201038150A publication Critical patent/TW201038150A/en
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Publication of TWI402004B publication Critical patent/TWI402004B/en

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Abstract

A method for manufacturing a heat dissipation and insulated substrate comprises the steps of: preparing at least one treated ceramic powder by hydrolysis-condensation reaction of at least one ceramic powder, wherein the at least one treated ceramic powder comprises a plurality of treated powder particles, each of which is grafted with an organic material; mixing the at least one treated ceramic powder, a polymer, and a curing agent to obtain a dielectric material; pressing the dielectric material through a slit to form a sheet-like substrate; and forming a first film and a second film on two sides of the sheet-like substrate so as to form the heat dissipation and insulated substrate, wherein the first and second films are a metal foil or mold-release film.

Description

201038150201038150

4 I 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種散熱基板及其製備方法,特別係關 於包含一父互穿透結構(inter-penetrating-network ; ipn)之 導熱絕緣高分子材料之散熱基板及其製備方法。 【先前技術】 近幾年來,由於電子裝置中之電路板上使用之電子元件 ◎ 的功率越來越高,電子元件產生的熱管理問題變成不可忽 視。若電子元件之散熱不良,將使電子元件處於高溫狀態, 電子元件的溫度過高’不僅大幅降低電子元件之效能,甚 至影響其壽命與可靠度◎因此,電子裝置在設計時,常使 用導熱較佳之電路基板,以便提供電子元件較佳的散熱環 習知技藝之導熱電路基板之製作係將液態環氧樹脂、導 熱填料和固化劑等材料混合而成之樹脂漿塗佈於金屬基材 〇 上’然後將其加熱以形成膠態(B-Stage),最後再利用熱壓 合製作成一電路板;或者,將環氧樹脂塗佈於玻璃纖維布 上’加熱形成膠態(Β-stage)後’再由熱壓製程製作出一玻 璃纖維電路板。 上述習知技藝之製程需使用較低之黏稠度之樹脂漿,然 而低黏度之樹脂漿會因導熱填料沉降而產生發生固體與液 體分層的現象,此現象會造成混合不均,進而影響到散熱 效率’而且該樹脂漿也有儲存不易之問題。以玻璃纖維製 作之電路板’由於玻璃纖維之導熱係數低(約為4 I. Description of the Invention: [Technical Field] The present invention relates to a heat dissipating substrate and a method of fabricating the same, and more particularly to a thermally conductive insulating polymer comprising an inter-penetrating-network (IPN) structure Thermal substrate for material and preparation method thereof. [Prior Art] In recent years, since the power of electronic components used in circuit boards in electronic devices has become higher and higher, thermal management problems caused by electronic components have become unnegligible. If the heat dissipation of the electronic components is poor, the electronic components will be in a high temperature state, and the temperature of the electronic components will be too high, which not only greatly reduces the performance of the electronic components, but also affects their lifetime and reliability. Therefore, the electronic device is often designed to use heat conduction. A good circuit board for providing a preferred heat dissipating ring for electronic components. The thermal conductive circuit substrate is prepared by coating a resin slurry obtained by mixing a liquid epoxy resin, a heat conductive filler and a curing agent onto a metal substrate. 'Ther is then heated to form a colloidal state (B-Stage), and finally made into a circuit board by thermocompression; or, after applying epoxy resin to the glass fiber cloth, 'heating to form a Β-stage 'A fiberglass circuit board was produced by a hot press process. The above-mentioned prior art process requires the use of a resin paste having a lower viscosity. However, the low-viscosity resin slurry may cause delamination of solids and liquids due to sedimentation of the thermally conductive filler, which may cause uneven mixing and thus affect The heat dissipation efficiency is also a problem that the resin slurry is also difficult to store. The circuit board made of glass fiber has a low thermal conductivity due to the glass fiber (about

136097.DOC 4 201038150 « > W/mK ),故其導熱效果不佳。此外,上述習知技藝之 製程均使用塗佈製程,然而塗佈製程有速度慢、產量低等 問題。 综上所述,習知技藝之導熱電路基板之製作係利用塗 佈製程然:塗佈製程速度慢、產量低,且因其需使用低黏 度之樹脂漿,而易發生固體與液體分層的問題。此外,由 於玻璃纖維之導熱係數低,因此以玻璃纖維製作之電路板 〇 導熱效果不佳。故,目前仍需一種具高導熱能力之導熱電 路基板及能高速量產該具高導熱能力之導熱電路基板之製 作方法。 【發明内容】 本發明提供一種導熱絕緣基板及以該導熱絕緣基板製作 而成之導熱絕緣複合基板及其製備方法,導熱絕緣基板係 以一具有一交互穿透結構之特性而呈現橡膠狀(rubbery)之 ’邑緣材料所製成,該絕緣材料具高導熱性,以及不發生固 © 體與液體分層的問題,且可利用擠壓之方式製作,故可提 高其製備之速度。 本發明第一方面揭示一種導熱絕緣基板之製備方法,其 包含下列步驟:對至少一陶瓷粉末進行水解縮合反應,以 獲得至少-改質陶究粉末,其中各該至少一改質陶竞粉末 包含複數個改質粉末顆粒,而各該改質粉末顆粒之表面接 枝—有機化合物;將該至少一改質陶瓷粉末、一高分子材 料和一固化劑混合,以獲得一絕緣材料;將該絕緣材料擠 壓通過一狹縫,以形成一板狀基材;以及分別設置第一膜 136097.DOC 5 201038150 t » 材及第一膜材於該板狀基材之二板面上,而形成該導熱絕 緣基板,其中該第一膜材及第二膜材係選自金屬材或離塑 材。 本發明第二方面揭示一種導熱絕緣複合基板之製備方 法’其包含下列步驟:對至少一陶瓷粉末進行水解縮合反 應’以獲得至少一改質陶瓷粉末,其中各該至少一陶瓷粉 末包含複數個粉末顆粒,而經過該水解縮合反應後,各該 ^ 改質粉末顆粒之表面接枝一有機化合物;將該至少一改質 陶瓷粉末、一高分子材料和一固化劑混合,以獲得一絕緣 材料,將該絕緣材料擠壓通過一狹缝,以形成一板狀基材 ;設置一金屬材於該板狀基材之一板面上;裁切具該金屬 材之該板狀基材成導熱絕緣基板;以及於一壓合溫度下, 壓合複數片該導熱絕緣基板,而形成該導熱絕緣複合基板 〇 【實施方式】 〇 圖1顯示本發明一實施例之導熱絕緣複合基板之製備方 法之流程示意圖。本發明一實施例揭示一導熱絕緣複合基 板之製備方法,該方法包含下列步驟:在步驟S11中,對至 少一陶究粉末進行水解縮合反應,以獲得至少一改質陶莞 私末,、中各該至?文質陶曼粉末包含複數個改質粉末 顆粒’而該改質粉末顆粒之表面接枝一有機化合物。於一 實施例中,該有機化合物係有機石夕,而該水解縮合反應係 在-酸性環境下,以該有機石夕對該至少一陶竞粉末進行反 應;於另-實施例中,該有機化合物係有機欽,而該水解136097.DOC 4 201038150 « > W/mK ), so its thermal conductivity is not good. In addition, the above-mentioned prior art processes use a coating process, however, the coating process has problems such as slow speed and low yield. In summary, the fabrication of the thermally conductive circuit substrate of the prior art utilizes a coating process: the coating process is slow, the yield is low, and because of the need to use a low-viscosity resin slurry, solid and liquid stratification is liable to occur. problem. In addition, since the thermal conductivity of the glass fiber is low, the heat dissipation effect of the circuit board made of glass fiber is not good. Therefore, there is still a need for a heat-conducting circuit substrate having high thermal conductivity and a method of manufacturing the thermally conductive circuit substrate capable of mass-producing the high thermal conductivity. SUMMARY OF THE INVENTION The present invention provides a thermally conductive insulating substrate and a thermally conductive insulating composite substrate prepared by using the thermally conductive insulating substrate, and a method for fabricating the same, wherein the thermally conductive insulating substrate is rubbery in a property having an interpenetrating structure (rubbery It is made of the 'edge material, which has high thermal conductivity and does not cause delamination of the solid body and the liquid, and can be produced by extrusion, so that the speed of preparation thereof can be improved. A first aspect of the present invention discloses a method for preparing a thermally conductive insulating substrate, comprising the steps of: performing a hydrolysis condensation reaction on at least one ceramic powder to obtain at least a modified ceramic powder, wherein each of the at least one modified Tao Jing powder comprises a plurality of modified powder particles, and a surface grafting-organic compound of each of the modified powder particles; mixing the at least one modified ceramic powder, a polymer material and a curing agent to obtain an insulating material; The material is extruded through a slit to form a plate-shaped substrate; and the first film 136097.DOC 5 201038150 t » material and the first film are respectively disposed on the two plates of the plate-like substrate, thereby forming the The thermally conductive insulating substrate, wherein the first film and the second film are selected from a metal material or a plastic material. A second aspect of the invention discloses a method for preparing a thermally conductive and insulating composite substrate, which comprises the steps of: performing a hydrolysis condensation reaction on at least one ceramic powder to obtain at least one modified ceramic powder, wherein each of the at least one ceramic powder comprises a plurality of powders And granules, after the hydrolysis condensation reaction, the surface of each of the modified powder particles is grafted with an organic compound; the at least one modified ceramic powder, a polymer material and a curing agent are mixed to obtain an insulating material, Extruding the insulating material through a slit to form a plate-shaped substrate; disposing a metal material on one of the plate-shaped base materials; and cutting the plate-shaped base material having the metal material to be thermally conductive and insulating And forming a thermally conductive insulating substrate at a pressing temperature to form the thermally conductive insulating substrate. [Embodiment] FIG. 1 shows a flow of a method for preparing a thermally conductive and insulating composite substrate according to an embodiment of the present invention. schematic diagram. An embodiment of the present invention discloses a method for preparing a thermally conductive and insulating composite substrate, the method comprising the steps of: performing a hydrolysis condensation reaction on at least one ceramic powder in step S11 to obtain at least one modified Taowan private, medium, Each of the granules contains a plurality of modified powder particles, and the surface of the modified powder particles is grafted with an organic compound. In one embodiment, the organic compound is an organic stone, and the hydrolysis condensation reaction is carried out in an acidic environment, and the organic stone is reacted with the at least one ceramic powder; in another embodiment, the organic The compound is organic and the hydrolysis

I36097.DOC 6 201038150 t * 縮合反應係在一酸性環境下,以有機鈦對該至少一陶瓷粉 末進行反應’而於上述兩實施例中之酸性環境,其酸驗值 約在PH 1至PH 5之間。在步驟S12中,將該至少一改質陶£ 粉末與一岗分子材料和一固化劑(curing agent)混合,以獲 得一絕緣材料,其中該絕緣材料之導熱係數大於 0.5W/mK。在步驟S13中,將該絕緣材料擠壓通過一狹縫, 以形成一板狀基材,其中該絕緣材料以介於5〇艽至15(TC之 溫度擠壓通過該狹縫。 ❹ 在步驟S14中,該板狀基材之兩板面上,各設置一第一膜 材與一第二膜材。第一膜材和第二膜材分別可包含離型材 及金屬材。第一膜材、板狀基材和第二膜材之組合(第一 膜材/板狀基材/第二膜材)可包含離型材/板狀基材/離型材 (即’ prepreg基板)、金屬材/板狀基材/離型材(即,樹脂 包覆金屬基板;resin coated metal substrate )以及金屬材/ 板狀基材/金屬材(即,基板;metal core substrate )等不同 Q 組合。在步驟S15中,裁切已設置第一膜材和第二膜材之板 狀基材成導熱絕緣基板,導熱絕緣基板可與其它金屬基板 或印刷電路板疊合成單面板、雙面板、金屬核心板或多層 基板,於一壓合溫度下,壓合成一導熱絕緣複合基板,而 該壓合溫度可介於80°C至220°C。在步驟S16中,以一成型 技術,修整壓合之該導熱絕緣複合基板,其中該成型技術 包含裁切、剪切、衝切、鑽石切等製程。 高分子材料之成分包含熱塑型塑膠(thermoplastic)和熱 固型環氧樹脂(thermosetting epoxy),且該熱固型環氧樹脂 136097.DOC 7 201038150 t · 可佔該高分子材料之體積百分比係介於7〇%至97%之間。該 熱固型環氧樹脂可藉該固化劑於一固化溫度下將其固化, 其中該固化溫度可高於8〇°C。 特而§之,該絕緣材料之混摻方法首先將包含該熱塑型 塑黟及該熱固型環氧樹脂之向分子材料以2〇〇它加熱混合 大約30分鐘以生成一均勻膠體。再將改質後之陶究粉末加 入該均勻膠體後混合均勻以形成一均勻橡膠狀材料,再將 〇 固化劑與加速劑於80。〇溫度下加入該均勻橡膠狀材料,以 形成一絕緣材料,其中該均勻橡膠狀材料具交互穿透結構 (inter-penetrating netw〇rk),且由於該熱塑型塑膠與該熱固 型環氧樹脂係彼此互溶且呈均勻相(h〇m〇gene〇us),藉此使 得該陶瓷粉末均勻散佈於該交互穿透結構中,以達到最佳 之導熱效果。該陶瓷粉末係均勻分散於該高分子材料中, 且該陶瓷粉末約佔該絕緣材料之體積百分比介於4 〇 %至 70%之間。 〇 上述之熱塑型塑膠可為一超高分子量苯氧基樹脂,其中 该超咼分子量苯氧基樹脂之分子量可大於30000<>熱塑型塑 膠亦可包含一羥基_苯氧基樹脂醚高分子結構,其中該羥基 _苯氧基樹脂醚高分子結構可經由雙環氧化物與雙官能基 物種經聚合反應而成。該熱塑型塑膠又可分別由液態環氧 樹脂與雙酚A、液態環氧樹脂與二價酸、液態環氧樹脂與胺 類等方式反應而成。上述之熱固型環氧樹脂可包含未固化 之液態環氧樹脂、聚合環氧樹脂、酚酴環氧樹脂或酚曱烷 樹脂。 201038150 Λ .· 因熱塑型塑膠之特性使該導熱絕緣材料可以經由熱塑型 塑膠製程成形,又因含有熱固型塑膠,在高溫下得以固化 交聯,而形成一熱塑型塑膠與熱固型塑膠交互穿透之結 構,此結構不但可以有耐高溫不變型的熱固型塑膠特性, 又擁有強韌不易脆裂的熱塑型塑膠之特性,並可與金屬電 極或基板產生強力接著。 參照圖2Α ’導熱絕緣基板η之兩板面上,一板面可設置 印刷電路板12,而另一板面可設置1.〇至1.5公釐的金屬基板 Ό 13,該疊合結構可利用一熱壓機以2〇〇。〇以25kg/cm2之壓力 壓合’形成導熱絕緣複合基板10,一實施例中,金屬基板 可為一銘基板,使壓合後之複合基板為單面雙層鋁基板。 印刷電路板12可為導熱絕緣基板π之至少一表面上具有圖 案化之金屬材14之組成。參照圖2B,導熱絕緣基板丨丨之一 板面上’設置一金屬材15,另依板面上設置金屬材16,該 金屬材15導熱絕緣基板11金屬材16,經2〇〇〇c 90分鐘之熱壓 〇 後(並控制其厚度,例如〇.5mm),即形成一厚度為0.2mm之 導熱絕緣複合基板10'之另一態樣,即單面金屬基板。金屬 材15、金屬基材16與導熱絕緣基板u間形成物理接觸且其 導熱係數係大於0.5W/mK。該導熱絕緣複合基板1〇,之厚度 小於0.5mm且可耐大於1〇〇〇伏特之電壓。 參照圖2C,導熱絕緣基板U可與多種不同金屬材15疊 合,豐合成金屬材15/導熱絕緣基板u/金屬材15/導熱絕緣 基板11/金屬材15之後再進行熱壓以形成金屬核心基板結 構。 136097.DOC 9 201038150 * · 於進行上述熱壓合製程時,該片狀導熱絕緣複合材料因 已具父互穿透結構’故不會發生分層(separati〇n)之現象。 前述眾金屬材之材料係選自銅、鋁、鎳、銅合金、鋁合金、 鎳合金、銅鎳合金及鋁銅合金。該片狀導熱絕緣複合材料 之外觀呈現橡膠狀(非樹脂漿狀(slurry))因而具有方便儲 存、加工之特性。此外’該導熱絕緣複合材料亦可利用一 般使用於熱塑型塑膠之加工方法加以加工,藉此提高其可 加工性。 〇 本發明使用之高分子材料中,該熱塑型塑膠及該熱固型 環乳樹月日係實質上彼此互溶(substantially mutuaiiy soluble)。「實質上彼此互溶」意謂當該熱塑型塑膠及該熱 固型環氧樹脂混合後形成一具單一玻璃轉換溫度(single glass transition temperature)之溶液。因為該熱塑型塑膠及 該熱固型環氧樹脂係彼此互溶,當二者混合時,該熱塑型 塑膝將溶解至該熱固型環氧樹脂中,使得該熱塑型塑膠之 〇 玻璃轉換溫度實質地降低,並允許二者之混合發生在低於 該熱塑型塑膠之正常軟化溫度(n〇rmal s〇ftening temperature)。所形成之混合物(即該高分子成分)於室溫下 係呈橡膠狀(或固態)’易於稱重及儲存。例如,即使該熱固 型環氧樹脂係一液態環氧樹脂,在與該熱塑型塑膠混合之 後所形成之混合物,其本身雖非液態但卻可被製成一似皮 革之堅韌薄膜(tough leathery Him)。於25。〇下,該混合物 具一相當高之黏滯係數(約105至1〇7泊(p〇ise)),其係避免該 高分子成分發生沈殿(settling)或重新分佈(redistributi〇n) 10 201038150 之重要因素。此外,該混合物在一般進行混合之溫度下(約 40°C至100°C)具有一足夠低之黏滯係數(於60°C下,約1〇4 至1〇5泊),使得添加的固化劑及陶瓷粉末可均勻分佈在該混 合物中並進行反應。該混合物之眾多例子可參考PCT專利 公開號WO92/08073(1992年5月14曰公開)(於本文中一併作 為參考)。 本發明之導熱絕緣高分子材料中之固化劑(curing agent) ^ 之固化溫度Tcure係高於100°c,用以固化(即交聯(crosslink)I36097.DOC 6 201038150 t * The condensation reaction is carried out by reacting the at least one ceramic powder with organic titanium in an acidic environment', and in the acidic environment of the above two examples, the acid value is about PH 1 to PH 5 between. In step S12, the at least one modified ceramic powder is mixed with a colloidal molecular material and a curing agent to obtain an insulating material, wherein the insulating material has a thermal conductivity greater than 0.5 W/mK. In step S13, the insulating material is extruded through a slit to form a plate-like substrate, wherein the insulating material is extruded through the slit at a temperature of 5 to 15 (TC). In S14, a first film material and a second film material are disposed on each of the two plate surfaces of the plate-shaped substrate. The first film material and the second film material may respectively comprise a release material and a metal material. The first film material The combination of the plate-shaped substrate and the second film (the first film/plate-like substrate/second film) may comprise a release profile/plate-like substrate/release profile (ie 'prepreg substrate'), metal material/ a different Q combination of a plate substrate/release material (ie, resin coated metal substrate) and a metal material/plate material/metal material (ie, metal core substrate). In step S15 Cutting the plate-shaped substrate of the first film and the second film into a heat-conductive insulating substrate, and the heat-conductive insulating substrate can be laminated with other metal substrates or printed circuit boards to form a single-panel, double-panel, metal core plate or multi-layer substrate Compressing a thermally conductive and insulating composite substrate at a pressing temperature, and The bonding temperature may be between 80 ° C and 220 ° C. In step S16, the thermally conductive insulating composite substrate is trimmed by a molding technique, wherein the molding technique includes cutting, shearing, punching, diamond cutting, etc. The composition of the polymer material comprises a thermoplastic and a thermosetting epoxy, and the thermosetting epoxy resin 136097.DOC 7 201038150 t · can occupy the volume of the polymer material The percentage is between 7〇% and 97%. The thermosetting epoxy resin can be cured by the curing agent at a curing temperature, wherein the curing temperature can be higher than 8 ° C. The method of mixing the insulating material firstly heats the molecular plastic material comprising the thermoplastic plastic enamel and the thermosetting epoxy resin by heating for about 30 minutes to form a uniform colloid. The ceramic powder is added to the uniform colloid and uniformly mixed to form a uniform rubber-like material, and the uniform rubber-like material is added to the crucible curing agent and the accelerator at a temperature of 80 ° C to form an insulating material, wherein the uniform rubber Material Inter-penetrating netw〇rk, and because the thermoplastic plastic and the thermosetting epoxy resin are mutually soluble and in a uniform phase (h〇m〇gene〇us), thereby making the ceramic The powder is uniformly dispersed in the interpenetrating structure to achieve an optimal heat conduction effect. The ceramic powder is uniformly dispersed in the polymer material, and the ceramic powder accounts for about 4% by volume of the insulating material to Between 70%. The thermoplastic plastic mentioned above may be an ultrahigh molecular weight phenoxy resin, wherein the molecular weight of the ultrafine molecular weight phenoxy resin may be greater than 30000<> the thermoplastic plastic may also contain a hydroxyl group. A phenoxy resin ether polymer structure in which the hydroxy-phenoxy resin ether polymer structure can be polymerized by reacting a diepoxide with a difunctional group. The thermoplastic plastic can be formed by reacting liquid epoxy resin with bisphenol A, liquid epoxy resin and divalent acid, liquid epoxy resin and amine. The above thermosetting epoxy resin may comprise an uncured liquid epoxy resin, a polymerized epoxy resin, a phenolphthalein epoxy resin or a phenolphthalein resin. 201038150 Λ .· Due to the characteristics of thermoplastic plastics, the thermal conductive insulation material can be formed through a thermoplastic plastic process, and because it contains a thermosetting plastic, it can be cured and crosslinked at a high temperature to form a thermoplastic plastic and heat. The structure of solid plastic cross-penetration, this structure can not only have the characteristics of thermosetting plastic with high temperature resistance, but also the characteristics of thermoplastic plastic which is not tough and brittle, and can be strong with metal electrodes or substrates. . Referring to FIG. 2Α 'on both sides of the thermally conductive insulating substrate η, one board surface may be provided with a printed circuit board 12, and the other board surface may be provided with a metal substrate 11 to 1.5 mm, and the laminated structure may be utilized A hot press is 2 inches. The crucible is formed by press-bonding at a pressure of 25 kg/cm2 to form a thermally conductive and insulating composite substrate 10. In one embodiment, the metal substrate can be a substrate, and the laminated composite substrate is a single-sided, double-layer aluminum substrate. The printed circuit board 12 may be of a composition having a patterned metal material 14 on at least one surface of the thermally conductive insulating substrate π. Referring to FIG. 2B, a metal material 15 is disposed on one surface of the heat-conductive insulating substrate, and a metal material 16 is disposed on the surface of the heat-insulating substrate. The metal material 15 is thermally conductive. The metal material 16 of the insulating substrate 11 is passed through 2〇〇〇c 90. After a minute of hot pressing (and controlling its thickness, for example, 〇5 mm), another aspect of the thermally conductive insulating composite substrate 10' having a thickness of 0.2 mm is formed, that is, a single-sided metal substrate. The metal material 15, the metal substrate 16 and the thermally conductive insulating substrate u are in physical contact with each other and have a thermal conductivity greater than 0.5 W/mK. The thermally conductive and insulating composite substrate has a thickness of less than 0.5 mm and can withstand a voltage greater than 1 volt. Referring to FIG. 2C, the thermally conductive insulating substrate U can be laminated with a plurality of different metal materials 15, and the synthetic metal material 15 / the thermally conductive insulating substrate u / the metal material 15 / the thermally conductive insulating substrate 11 / the metal material 15 are then hot pressed to form a metal core. Substrate structure. 136097.DOC 9 201038150 * · When the above-mentioned thermal compression bonding process is carried out, the sheet-like thermally conductive and insulating composite material does not undergo delamination because it has a parent interpenetrating structure. The materials of the foregoing metal materials are selected from the group consisting of copper, aluminum, nickel, copper alloys, aluminum alloys, nickel alloys, copper-nickel alloys and aluminum-copper alloys. The sheet-like thermally conductive insulating composite material has a rubbery appearance (non-resin) and thus has characteristics of convenient storage and processing. In addition, the thermally conductive and insulating composite material can be processed by a processing method generally used for thermoplastic molding, thereby improving the workability. In the polymer material used in the present invention, the thermoplastic plastic and the thermosetting ring-shaped milk tree are substantially mutually mutuaiiy soluble. "Substantially mutually soluble" means that a solution of a single glass transition temperature is formed when the thermoplastic plastic and the thermosetting epoxy resin are mixed. Because the thermoplastic plastic and the thermosetting epoxy resin are mutually soluble, when the two are mixed, the thermoplastic plastic knee will be dissolved into the thermosetting epoxy resin, so that the thermoplastic plastic is entangled. The glass transition temperature is substantially reduced and allows mixing of the two to occur below the normal softening temperature (n〇rmal s〇ftening temperature) of the thermoplastic. The resulting mixture (i.e., the polymer component) is rubbery (or solid) at room temperature and is easy to weigh and store. For example, even if the thermosetting epoxy resin is a liquid epoxy resin, the mixture formed after mixing with the thermoplastic plastic can be made into a leather-like tough film (tough) although it is not liquid. Leathery Him). At 25. Under the armpit, the mixture has a relatively high viscosity coefficient (about 105 to 1 〇 7 poise), which prevents the polymer component from being settling or redistributing 10 201038150 An important factor. In addition, the mixture has a sufficiently low viscosity coefficient (about 1〇4 to 1〇5 poise at 60 ° C) at a temperature at which mixing is generally carried out (about 40 ° C to 100 ° C), so that added The curing agent and the ceramic powder can be uniformly distributed in the mixture and reacted. A wide variety of examples of such mixtures can be found in PCT Patent Publication No. WO 92/08073 (published May 14, 1992), which is incorporated herein by reference. The curing temperature of the curing agent in the thermally conductive insulating polymer material of the present invention is higher than 100 ° C for curing (ie, crosslink)

或催化聚合(catalyze polymerization))該熱固型環氧樹脂。 該固化劑係在高於混合溫度Traix時將該熱固型環氧樹脂快 速固化,其中該混合溫度Tmix係指該熱塑型塑膠、該熱固型 環氧樹脂及該固化劑混合時之溫度,且該混合溫度Tmix—般 約自25°C至100°C。該固化劑於該混合溫度Tmix下混合時, 並不會起始一實質固化過程(substantial curing)。.於本發明 中該固化劑之添加劑量係可使該熱固型環氧樹脂於高於該 Q 混合溫度丁_時被固化。較佳地,該固化劑於小於約100°C 時不會起始該實質固化過程且使得該導熱絕緣高分子材料 於25 °C下保持在實質未固化狀態(substantially uncured)達 至少半年之久。 除上所述外,本發明熱塑型塑膠亦可選用一實質非結晶 熱塑型樹脂(essentially amorphous thermoplastic resin),其 定義請參考"Saechtling International plastic Handbook for the Techno logy,Engineer and User,secondOr catalytic polymerization) the thermosetting epoxy resin. The curing agent rapidly cures the thermosetting epoxy resin at a temperature higher than the mixing temperature Tramix, wherein the mixing temperature Tmix refers to the temperature at which the thermoplastic plastic, the thermosetting epoxy resin, and the curing agent are mixed. And the mixing temperature Tmix is generally from about 25 ° C to 100 ° C. When the curing agent is mixed at the mixing temperature Tmix, a substantial curing is not initiated. In the present invention, the amount of the curing agent is such that the thermosetting epoxy resin is cured at a temperature higher than the Q mixing temperature. Preferably, the curing agent does not initiate the substantial curing process at less than about 100 ° C and causes the thermally conductive insulating polymeric material to remain substantially uncured at 25 ° C for at least half a year. . In addition to the above, the thermoplastic plastic of the present invention may also be selected from a substantially non-crystalline thermoplastic resin. For the definition, please refer to "Saechtling International plastic Handbook for the Technology, Engineer and User, second

Edition,1987,Hanser Publishers,Munich"之第 1 頁。「實質非 201038150 s 結晶」係意謂該樹脂中之「結晶性」(crystallinity)部分至 多佔15%,較佳地至多佔10%,特別地至多佔5%,例如: 佔0至5°/❶的結晶性。該實質非結晶熱塑型樹脂係一高分子 量之聚合物,在室溫下係呈現堅硬狀(rigid)或橡膠狀 (rubbery),其在該高分子成分於未固化狀態時(uncured state)用以提供強度(strength)及高黏滯性(high viscosity)等 性質。該實質非結晶熱塑型樹脂在該高分子成分中所佔的 體積百分比一般係介於10%至75%,較佳地係介於15%至 ❹ 60%,特別地係介於25%至45%。該實質非結晶熱塑型樹脂 可以選自聚硬(polysulfone)、聚醚颯(polyethersulfone)、聚 苯乙稀(polystyrene)、聚氧化二甲苯(polyphenylene oxide)、聚苯硫謎(polyphenylene sulfide)、聚酿胺 (polyamide)、苯氧基樹脂(phenoxy resin)、聚亞醯胺 (polyimide)、聚醚醯亞胺(polyetherimide)、聚謎醯亞胺與 碎酮之塊體共聚合物(polyetherimide/silicone block ^ copolymer)、聚氨醋(polyurethane)、聚醋樹脂(polyester)、 聚碳酸酯(polycarbonate),壓克力樹脂(acrylic resin)(例 如:聚曱基丙稀酸甲醋(polymethyl methacrylate)、苯乙浠 (styrene)/丙稀(Acrylonitrile)及苯乙烯塊體共聚合物 (styrene block copolymers)) ° 另該熱塑型塑膠最佳地可包含一羥基一苯氧基樹脂醚 (hydroxy — phenoxyether)高分子結構。該經基一苯氧基樹脂 醚係由一雙環氧化物(diepoxide)與一雙官能基物種 (difunctional species)之一適當配比混合物(stoichiometric 136097.DOC 12 201038150 * mixture)經聚合反應(polymerization)而成。該雙環氧化物係 一具環氧當量(epoxy equivalent weight)約自 100至 10000之 環氧樹脂。例如:雙酌·Α二環氧甘油醚(diglycidyl ether of bisphenol A)、diglycidyl ether of 4,4’一 sulfonyldiphenol、 diglycidyl ether of 4,4'— oxydiphenol、diglycidyl ether of 4,4' — dihydroxybenzophenone、對苯二酌二環氧甘油趟 (diglycidyl ether of hydroquinone)A diglycidyl ether of 9,9 —(4 — hydroxyphenyl)fluorine。該雙官能基物種係一二元紛 Ο (dihydric phenol)、一 二叛酸(dicarboxylic acid)、一一 級胺 (primary amine)、一二狒基化物(dithiol)、disulfonamide 或 一雙二級胺(bis — secondary amine)。該二元紛可選自 4,4' —isopropylidene bisphenol(bisphenol A) 、 4,4'— sulfonyl diphenol 、 4,4' — oxydiphenol 、 4,4'— dihydroxybenzophenone 或 9,9 — bis(4 — hydroxyphenyl)fluorene。該二叛酸可選自異苯二甲酸 ^ (isophthalic acid)、對苯二甲酸(terephthalic acid)、4,4'— biphenylenedicarboxylic acid 或 2,6 — naphthalenedicarboxylic acid。該雙二級胺可選自比陪拉辛 (piperazine) 、 dimethylpiperazine 或 1,2 — bis(N — methylamino)ethane。該一級胺可選自對曱氧基苯胺(4 — methoxyaniline)或乙醇胺(2—aminoethanol)。該二拂基化 物可為 4,4’一 dimercaptodiphenyl ether。該 disulfonamide 可 選自 N,N'— dimethyl — 1,3 — benzenedisulfonamide 或 Ν,Ν1 —bis(2 — hydroxyethyl) — 4,4 — biphenyldisulfonamide 〇 此 I36097.DOC 13 201038150 外,該雙官能基物種亦可是包含兩種可與環氧基群(epoxide group)反應之不同功能團(functionality)之混合物;例如; 水楊酸(salicylic acid)及4—經基苯甲酸(4— hydroxybenzoic acid)。 本發明導熱絕緣高分子材料中之熱塑型塑膠亦可選自一 液態環氧樹脂與雙盼A(bisphenol A)、雙紛F(bisphenol F) 或雙盼 S(bisphenol S)之生成物(reaction product)、一 液態環 ❹ 氧樹脂與一二價酸(diacid)之生成物或一液態環氧樹脂與 一胺類(amine)之生成物。 本發明導熱絕緣高分子材料中之熱固型環氧樹脂除表一 所述之材料外,亦可選自"Saechtling International plastic Handbook for the Techno logy, Engineer and User,Second Edition, 1987,Hanser Publishers,Munich"之第 1 頁及第 2 頁 中所定義之熱固型樹脂(thermosetting resin)。該熱固型樹 脂在該高分子成分中所佔的體積百分比一般係介於90%至 〇 25%,較佳地係介於85%至40%,特別地係介於75%至55%。 且該高分子成分中之該實質非結晶熱塑型樹脂與該熱固 型樹脂之體積比係大約介於1 : 9至3: 1。該熱固型樹脂較 佳地係具有大於2之官能團基。於室溫之下,該熱固型樹脂 係呈現液態或固態。若該熱固型樹脂在不加入熱塑型樹脂 之條件下而固化,則該熱固型樹脂將呈現堅硬狀(rigid)或橡 膠狀(rubbery)。較佳之熱固型樹脂係一未固化環氧樹脂 (uncured epoxy resin),特別是定義於 ASTM D 1763之未固 化之液態環氧樹脂。關於液態之環氧樹脂可參考"Volume 2 I36097.DOC 14 201038150 « of Engineered Materials Handbook,EngineeringEdition, 1987, Hanser Publishers, Munich" Page 1. "Substantially non-201038150 s crystallization" means that the "crystallinity" portion of the resin accounts for at most 15%, preferably at most 10%, in particular at most 5%, for example: 0 to 5°/ The crystallinity of bismuth. The substantially amorphous thermoplastic resin is a high molecular weight polymer which exhibits a rigid or rubbery at room temperature, and is used in an uncured state of the polymer component. To provide properties such as strength and high viscosity. The volume percentage of the substantially amorphous thermoplastic resin in the polymer component is generally from 10% to 75%, preferably from 15% to 60%, particularly from 25% to 45%. The substantially amorphous thermoplastic resin may be selected from the group consisting of polysulfone, polyethersulfone, polystyrene, polyphenylene oxide, polyphenylene sulfide, Polyamide, phenoxy resin, polyimide, polyetherimide, polymyimide and ketone block copolymer (polyetherimide/ Silicone block ^ copolymer), polyurethane, polyester, polycarbonate, acrylic resin (eg polymethyl methacrylate) , styrene / Acrylonitrile and styrene block copolymers ° ° The thermoplastic may optimally comprise monohydroxy-phenoxy resin ether (hydroxy - Phenoxyether) polymer structure. The trans-p-phenoxy resin ether is polymerized by a suitable mixture of a diepoxide and a difunctional species (stoichiometric 136097.DOC 12 201038150 * mixture). Made. The diepoxide is an epoxy resin having an epoxy equivalent weight of from about 100 to about 10,000. For example: diglycidyl ether of bisphenol A, diglycidyl ether of 4,4'-sulfonyldiphenol, diglycidyl ether of 4,4'-oxydiphenol, diglycidyl ether of 4,4'-dihydroxybenzophenone, Diglycidyl ether of hydroquinone A diglycidyl ether of 9,9-(4-hydroxyphenyl)fluorine. The bifunctional species is a dihydric phenol, a dicarboxylic acid, a primary amine, a dithiol, a disulfonamide or a secondary amine. (bis — secondary amine). The binary may be selected from 4,4'-isopropylidene bisphenol (bisphenol A), 4,4'-sulfonyl diphenol, 4,4'-oxydiphenol, 4,4'-dihydroxybenzophenone or 9,9-bis (4-hydroxyphenyl) ) fluorene. The ditopolic acid may be selected from the group consisting of isophthalic acid, terephthalic acid, 4,4'- biphenylenedicarboxylic acid or 2,6-naphthalenedicarboxylic acid. The bis-second amine can be selected from the group consisting of piperazine, dimethylpiperazine or 1,2-bis(N-methylamino)ethane. The primary amine may be selected from the group consisting of 4-methoxyaniline or 2-aminoethanol. The dimercapto compound can be 4,4'-dimercaptodiphenyl ether. The disulfonamide may be selected from the group consisting of N, N'-dimethyl-1,3-benzenedisulfonamide or hydrazine, Ν1-bis(2-hydroxyethyl)-4,4-biphenyldisulfonamide I I36097.DOC 13 201038150, the bifunctional species may also be Contains two mixtures of different functionalities that can react with the epoxide group; for example; salicylic acid and 4-hydroxybenzoic acid. The thermoplastic plastic in the thermally conductive insulating polymer material of the present invention may also be selected from the group consisting of a liquid epoxy resin and a bisphenol A, a bisphenol F or a bisphenol S product ( Reaction product), a liquid cyclic oxime resin and a product of diacid (diacid) or a liquid epoxy resin and an amine product. The thermosetting epoxy resin in the thermally conductive insulating polymer material of the present invention may be selected from the materials described in Table 1, and may be selected from "Saechtling International plastic Handbook for the Technology, Engineer and User, Second Edition, 1987, Hanser Publishers. , thermosetting resin as defined on pages 1 and 2 of Munich". The volume percentage of the thermosetting resin in the polymer component is generally from 90% to 25%, preferably from 85% to 40%, particularly from 75% to 55%. And the volume ratio of the substantially amorphous thermoplastic resin to the thermosetting resin in the polymer component is about 1:9 to 3:1. The thermosetting resin preferably has a functional group of more than 2. The thermosetting resin exhibits a liquid or solid state at room temperature. If the thermosetting resin is cured without adding a thermoplastic resin, the thermosetting resin will exhibit a rigid or rubbery shape. A preferred thermoset resin is an uncured epoxy resin, particularly an uncured liquid epoxy resin defined in ASTM D 1763. For liquid epoxy resins, please refer to "Volume 2 I36097.DOC 14 201038150 « of Engineered Materials Handbook,Engineering

Plastics,published by ASM International"第 240~241 頁之敍 述。有關「環氧樹脂」一詞係指包含至少兩個環氧官能基 (epoxy functional group)之傳統二聚環氧樹脂(dimeric epoxy)、單體環氧樹脂(oligomeric epoxy)或聚合環氧樹脂 (polymeric epoxy)。該環氧樹脂之種類可以是雙紛 A(bisphenol A)與環氧氯丙烧(epichlorohydrin)之生成物、紛 (phenol)與甲搭(formaldehyde,其係一種盼搭清漆樹脂 (noVolacresin))之生成物、環氧氣丙烧(epichlorohydrin)、 環烧類(cycloaliphatic)、過酸環氧樹脂(peracid epoxy)及縮 水甘油醚(glycidyl ester)、環氧氯丙烧與對氨基苯紛(p — amino phenol)之生成物、環氧氣丙烧與glyoxal tetraphenol 之生成物、盼酸:環氧樹脂(novolac epoxy)或酴曱烧樹脂 (bisphenol A epoxy)。商用上可取得的環氧化醋(epoxidic ester)較佳地係 3,4 — epoxycyclohexyl methyl3,4 — epoxycyclohexane — carboxylate(例如:Union Carbide公司 之 ERL 4221 或 Ciba Geigy 公司之 CY - 179)或 bis(3,4 — epoxycyclohexylmethyl)adipate(例如:Union Carbide公司之 ERL 4299)。商用上可取得的 diglycidic ether of bisphenol —A(DGEBA)可選自 Ciba Geigy公司之 Araldite 6010、陶氏 化學公司之DER 331及殼牌化學公司(Shell Chemical Company)之Epon 825、828、826、830、834、836、1001、 1004或1007等。另,聚環氧化酚甲醛預聚合物 (polyepoxidized phenol formaldehyde novolac prepolymer) 136097.DOC 15 201038150 可選自陶氏化學公司之DEN 431或438及Ciba Geigy公司之 CY—281 〇 而 polyepoxidized cersol for maldehyde novolac prepolymer則可選自 Ciba Geigy公司之 ENC 1285、1280或 1299。Polyglycidyl ether of polyhydric alcohol 可選自 Ciba Geigy公司之 Araldite RD — 2(係以 butane — 1,4_ diol為基礎) 或選自殼牌化學公司之Epon 812(係以甘油(glycerin)為基 礎)° 一 合適之diepoxide of an alkylcycloalkyl hydrocarbon 係乙稀基環已烧之氧化物(vinyl cyclohexane dioxide),例 如:Union Carbide公司之ERL 4206。另,一合適之diepoxide of a cycloalkyl ether 係 bis(2,3 — diepoxycyclopentyl) — ether,例如:Union Carbide公司之ERL 0400。此外,商用 上可取得之軟性環氧樹脂(flexible epoxy resin)包含 polyglycol diepoxy(例如:陶氏化學公司之DER 732及 736)、diglycidyl ester of linoleic dimer acid(例如:殼牌化 學公司之 Epon 871 及 872)及 diglycidyl ester of a bisphenol,其中芳香環(aromatic ring)係藉由一長脂肪鍵 (long aliphatic chain)連接(例如:Mobay Chemical company 之Lekutherm X— 80)。 此外,上述具有複數個功能團之熱固型樹脂可選自陶氏 化學公司之DEN 4875(其係一固態酚醛樹脂型環氧樹脂, solid epoxy novolac resin)、殼牌化學公司之Epon 1031(其 係一四功能固態環氧樹脂 ’ tetrafunctional solid epoxy resin) 及 Ciba — Geigy 公司之 Araldite MY 720(N,N,N,,N,一 tetraglycidyl—4,4'—methylenebisbenzenamine)。另,雙官 201038150 s « 態基環氧樹脂(difunctional epoxy resin,其係一雙環氧化 物)可選自殼牌化學公司之HPT 1071(係一固態樹脂, Ν,Ν,Ν',Ν' — tetraglycidyl — a,a' — bis(4 — aminophenyl)p — diisopropylbenzene)、 HPT 1079(係一固態 diglycidyl ether of bisphenol — 9 — fluorene)或 Ciba — Geigy 公司之 Araldite 0500/0510(triglycidylether of para— aminophenol) o 使用於本發明之該固化劑可選自isophthaloyl dihydrazide、benzophenone tetracarboxylic dianhydride、二Plastics, published by ASM International", pages 240-241. The term "epoxy resin" means a conventional dimeric epoxy, an oligomeric epoxy or a polymeric epoxy resin comprising at least two epoxy functional groups. Polymeric epoxy). The type of the epoxy resin may be a product of bisphenol A and epichlorohydrin, a phenol and a formaldehyde, which is a type of varnish resin (novolacresin). Products, epichlorohydrin, cycloaliphatic, peracid epoxy and glycidyl ester, epichlorohydrin and p-amino The product of phenol), the product of epoxide and glyoxal tetraphenol, the acid: novolac epoxy or bisphenol A epoxy. Commercially available epoxidic esters are preferably 3,4 - epoxycyclohexyl methyl 3,4 - epoxycyclohexane - carboxylate (for example: ERL 4221 from Union Carbide or CY-179 from Ciba Geigy) or bis (3) , 4 — epoxycyclohexylmethyl) adipate (eg, ERL 4299 from Union Carbide). Commercially available diglycidic ether of bisphenol-A (DGEBA) may be selected from Aribaite 6010 from Ciba Geigy, DER 331 from The Dow Chemical Company, and Epon 825, 828, 826, 830 from Shell Chemical Company. 834, 836, 1001, 1004 or 1007, etc. In addition, polyepoxidized phenol formaldehyde novolac prepolymer 136097.DOC 15 201038150 may be selected from DEN 431 or 438 of The Dow Chemical Company and CY-281 of Ciba Geigy Co., Ltd. and polyepoxidized cersol for maldehyde novolac prepolymer It can be selected from ENC 1285, 1280 or 1299 from Ciba Geigy. Polyglycidyl ether of polyhydric alcohol may be selected from Ciba Geigy's Araldite RD-2 (based on butane-1, 4_diol) or Epon 812 from Shell Chemical Company (based on glycerin) ° The diepoxide of an alkylcycloalkyl hydrocarbon is a vinyl cyclohexane dioxide such as ERL 4206 from Union Carbide. Further, a suitable diepoxide of a cycloalkyl ether is bis(2,3 - diepoxycyclopentyl)-ether, for example, ERL 0400 of Union Carbide. In addition, commercially available flexible epoxy resins include polyglycol diepoxy (eg, DER 732 and 736 from The Dow Chemical Company) and diglycidyl ester of linoleic dimer acid (eg, Epon 871 and 872 from Shell Chemical Company). And diglycidyl ester of a bisphenol, wherein the aromatic ring is linked by a long aliphatic chain (for example: Lekutherm X-80 of Mobay Chemical company). In addition, the above thermosetting resin having a plurality of functional groups may be selected from DEN 4875 of Tow Chemical Co., Ltd. (which is a solid epoxy novolac resin), and Epon 1031 of Shell Chemical Co., Ltd. A tetrafunctional solid epoxy resin and a Ciba-Geigy Araldite MY 720 (N, N, N, N, a tetraglycidyl-4, 4'-methylenebisbenzenamine). In addition, Shuangguan 201038150 s « Difunctional epoxy resin (a double epoxide) can be selected from Shell Chemical Company's HPT 1071 (a solid resin, Ν, Ν, Ν ', Ν' - tetraglycidyl — a, a' — bis(4 — aminophenyl)p — diisopropylbenzene), HPT 1079 (a solid diglycidyl ether of bisphenol — 9 — fluorene) or Ciba — Geigy's Araldite 0500/0510 (triglycidylether of para-aminophenol) o The curing agent used in the present invention may be selected from the group consisting of isophthaloyl dihydrazide, benzophenone tetracarboxylic dianhydride, and

O 乙基甲苯二胺(diethyltoluene diamine)、3,5—dimethylthio —2,4 — toluene diamine、雙氰胺(dicyandiamide,可取自 American Cyanamid 公司之 Curazol 2PHZ)或 DDS(di amino diphenyl sulfone,可取自 Ciba — Geigy 公司之 Calcure).。該固化劑亦可選自一取代雙氰胺(substituted dicyandiamides,例如 2,6 — xylenyl biguanide)、一固態聚醯 胺(solid polyamide,例如:Ciba—Geigy公司之HT— 939或 ❹ Pacific Anchor 公司之 Ancamine 2014AS)、一固態芳香胺 (solid aromatic amine,例如:殼牌化學公司之HPT 1061及 1062)、一固態針硬化劑(solid anhydride hardener,例如: 苯均四酸二針(pyromellitic dianhydride ; PMD A))、一盼搭 樹脂硬化劑(phenolic resin hardener,例如:聚對氫氧基苯 乙稀(poly(ρ — hydroxy styrene)、口米0坐(imidazole)、2 — phenyl —2,4— dihydroxymethylimidazoleil 2,4— diamino— 6[2' — methylimidazolyl( 1)] ethyl — s — triazine isocyanate adduct)、三氟化删(boron trifluoride)及一胺基複合物(amine 136097.DOC 17 201038150 complex,例如:Pacific Anchor公司之 Anchor 1222及 1907) 及三甲醇基丙烧三丙稀酸脂(trimethylol propane triacrylate) 〇Oethyltoluene diamine, 3,5-dimethylthio-2,4-toluene diamine, dicyandiamide (available from Curazol 2PHZ from American Cyanamid) or DDS (di amino diphenyl sulfone) From Ciba — Calgure of Geigy.... The curing agent may also be selected from the group consisting of a substituted dicyandiamides (for example, 2,6-xylenyl biguanide), a solid polyamide (for example, HT-939 of Ciba-Geigy Co., Ltd. or Anchor Pacific Anchor Co., Ltd.). Ancamine 2014AS), a solid aromatic amine (eg, HPT 1061 and 1062 from Shell Chemical Company), a solid anhydride hardener (eg, pyromellitic dianhydride; PMD A) ), a phenolic resin hardener (for example: poly(p-hydroxy styrene), imidazole, 2-phenyl-2,4-dihydroxymethylimidazoleil 2 4-diamino-6(2'-methylimidazolyl(1)] ethyl — s — triazine isocyanate adduct), boron trifluoride and an amine complex (amine 136097.DOC 17 201038150 complex, eg Pacific Anchor's Anchor 1222 and 1907) and trimethylol propane triacrylate 〇

針對該熱固型環氧樹脂而言,一較佳之固化劑係上述之 雙氰胺(dicyandiamide),且可配合一固化加速劑(curing accelerator)使用。常用之固化加速劑包含尿素(urea)或尿素 之化合物(urea compound)。例如:3 — phenyl — 1,1 — dimethylurea ' 3 — (4— chlorophenyl) — 1,1 — dimethyl urea ' 3 — (3,4 — dichlorophenyl) — 1,1 — dimethyl urea、3 — (3 — chloro — 4 — methylphenyl) — 1,1 — dimethyl urea 及味0坐 (imidazole)(例如:2 — heptadecylimidazole、 1 — cyanoethyl —2 — phenylimidazole — trimellitate 或 2 — [.beta. — {2'— methylimidazoyl — (Γ)}] — ethyl — 4,6 — diamino — s — tri azine) o 若該熱固型環氧樹脂係一氣基釺酸脂(urethane),則該固 化劑可使用一阻隔性異氰酸醋(blocked isocyanate)(例如: 烧基酴阻隔性異氰酸醋(alkyl phenol blocked isocyanate), 其可取自 Mobay Corporation之 Desmocap 11 A)或一盼阻隔 性聚異氰酸醋加成物(phenol blocked polyisocyanate adduct)(例如:Mobay Corporation之 Mondur S)。若該熱固 型環氧樹脂係一非飽合聚醋樹脂(unsaturated polyester resin),則該固化劑可使用一過氧化物(peroxide)或其他自由 基催化劑(free radical catalyst),例如:過氧化二異丙苯 (dicumyl peroxide) ' 2,5 — dimethyl — 2,5 — di(t — 136097.DOC 18 201038150 butylperoxy)hexane、t — butyl cumyl peroxide 及2,5 — dimethyl—2,5—di(t—butylperoxy)hexyne—3。此外,該非 飽合聚酯樹脂可利用放射線照射(irradiation,例如:紫外 線照射、高能電子束照射或γ輻射)以產生交聯。 某些熱固型環氧樹脂不需使用固化劑即可固化。例如: 若該熱固型環氧樹脂係一雙馬來醯亞胺(bismaleimide, BMI),則該雙馬來醯亞胺將於一高溫下產生交聯且一共 固化劑(co — curing agent) ’ 例如 0,0’ 一 diallyl bisphenol A, Ό 可一起添加使得已固化之雙馬來醯亞胺更加堅韌。 上述可利用過氧化物交聯劑(peroxide crosslinking agent)、高能電子束或γ輻射以產生交聯之樹脂較佳地可以 添加非飽合交聯助益劑(unsaturated crosslinking aid),例 如:三丙稀·異三聚氣酸(triallyl isocyanurate,TAIC)、三聚 氰酸三丙稀醋(triallyl cyanurate,TAC)或三經甲基丙烧三 丙烯酸醋(trimethylol propanetriacrylate,TMPTA)。 〇 絕緣材料中可包含一種或多種陶瓷粉末,陶瓷粉末可選 自氮化物、氧化物或前述氮化物與前述氧化物之混合物。 該氮化物可以使用氮化鍅、氮化硼、氮化鋁或氮化矽。該 氧化物可以使用氧化鋁、氧化鎂、氧化辞、二氧化矽或二 氧化鈦。 圖3顯示本發明一實施例之連續式射出成型裝置20之 示意圖。連續式射出成型裝置20包含一入料機構21、一送 料機構22、具一狹缝32之一模頭23、一壓輪裝置24及一裁 切裝置25。入料機構21係用於提供製作用之絕緣材料26。 I36097.DOC 19 201038150 β « 送料機構22將該絕緣材料26擠壓通過該模頭23之該狹缝32 ,藉以形成一板狀基材27,其中該絕緣材料26擠壓通過該 狹縫32時之溫度可介於50°C至150°C。壓輪裝置24包含鋼輪 28 ’該鋼輪28上分別繞轉第一膜材29與第二膜材30。當板 狀基材27通過該鋼輪28時,該第一膜材29與該第二膜材30 分別壓附於板狀基材27之兩板面。裁切裝置25係用於將該 板狀基材27裁切成導熱絕緣基板31。 0 本發明之技術内容及技術特點已揭示如上,然而熟悉 本項技術之人士仍可能基於本發明之教示及揭示而作種種 不背離本發明精神之替換及修飾。因此,本發明之保護範 圍應不限於實施例所揭示者,而應包括各種不背離本發明 之替換及修飾’並為以下之申請專利範圍所涵蓋。 【圖式簡要說明】 圖1顯示本發明一實施例之導熱絕緣基板之製備方法之 流程示意圖; 〇 圖2A至圖2C顯示本發明一實施例之導熱絕緣複合基板 之刳面示意圖;及 圖3顯示本發明一實施例之連續式射出成型裝置之示 意圖。 【主要元件符號說明】 S11〜S16流程步驟 1〇、10’、10"導熱絕緣複合基板 11 導熱絕緣基板 12 印刷電路板For the thermosetting epoxy resin, a preferred curing agent is the above-mentioned dicyandiamide, and can be used in combination with a curing accelerator. Commonly used curing accelerators include urea (urea) or urea compound (urea compound). For example: 3 — phenyl — 1,1 — dimethylurea ' 3 — (4-chlorophenyl) — 1,1 — dimethyl urea ' 3 — (3,4 — dichlorophenyl) — 1,1 — dimethyl urea, 3 — (3 — chloro — 4 — methylphenyl — — 1,1 — dimethyl urea and imidazole (eg 2 — heptadecylimidazole, 1 — cyanoethyl — 2 — phenylimidazole — trimellitate or 2 — [.beta. — {2'-methylimidazoyl — ( Γ)}] — ethyl — 4,6 — diamino — s — tri azine) o If the thermosetting epoxy resin is a urethane, the curing agent may use a barrier isocyanic acid vinegar. (blocked isocyanate) (for example: alkyl phenol blocked isocyanate, which can be taken from Mosquito's Desmocap 11 A) or a barrier viscous polyisocyanate adduct (phenol blocked) Polyisocyanate adduct) (for example: Mondur S from Mobay Corporation). If the thermosetting epoxy resin is an unsaturated polyester resin, the curing agent may use a peroxide or a free radical catalyst, for example, peroxidation. Dicumyl peroxide ' 2,5 — dimethyl — 2,5 — di(t — 136097.DOC 18 201038150 butylperoxy)hexane, t — butyl cumyl peroxide and 2,5 — dimethyl—2,5—di( T-butylperoxy)hexyne-3. Further, the non-saturated polyester resin may be irradiated (radiation, for example, ultraviolet irradiation, high-energy electron beam irradiation or gamma irradiation) to cause crosslinking. Some thermoset epoxy resins cure without the use of a curing agent. For example: If the thermosetting epoxy resin is a double bismaleimide (BMI), the bismaleimide will crosslink at a high temperature and a co-curing agent For example, 0,0' a diallyl bisphenol A, Ό can be added together to make the cured bismaleimide tougher. The above-mentioned peroxide crosslinking agent, high energy electron beam or gamma radiation may be used to produce a crosslinked resin. Preferably, an unsaturated crosslinking aid may be added, for example, tripropylene. Trial omega acid (TAIC), triallyl cyanurate (TAC) or trimethylol propanetriacrylate (TMPTA).一种 One or more ceramic powders may be included in the insulating material, and the ceramic powder may be selected from nitrides, oxides or a mixture of the foregoing nitrides and the foregoing oxides. As the nitride, tantalum nitride, boron nitride, aluminum nitride or tantalum nitride can be used. As the oxide, alumina, magnesia, oxidized, cerium oxide or titanium oxide can be used. Fig. 3 is a schematic view showing a continuous injection molding apparatus 20 according to an embodiment of the present invention. The continuous injection molding apparatus 20 includes a feeding mechanism 21, a feeding mechanism 22, a die 23 having a slit 32, a pressure roller device 24, and a cutting device 25. The feeding mechanism 21 is for providing an insulating material 26 for production. I36097.DOC 19 201038150 β « The feeding mechanism 22 presses the insulating material 26 through the slit 32 of the die 23, thereby forming a plate-like substrate 27, wherein the insulating material 26 is pressed through the slit 32 The temperature can range from 50 ° C to 150 ° C. The pressure roller device 24 includes a steel wheel 28' which revolves around the first film 29 and the second film 30, respectively. When the plate-like substrate 27 passes through the steel wheel 28, the first film 29 and the second film 30 are respectively pressed against the two plate faces of the plate-like substrate 27. The cutting device 25 is for cutting the plate-like base material 27 into the thermally conductive insulating substrate 31. The technical content and technical features of the present invention have been disclosed as above, but those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is not limited by the scope of the invention, and the invention is intended to be embraced by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic flow chart showing a method of fabricating a thermally conductive insulating substrate according to an embodiment of the present invention; FIG. 2A to FIG. 2C are schematic diagrams showing a thermal conductive insulating composite substrate according to an embodiment of the present invention; A schematic view of a continuous injection molding apparatus according to an embodiment of the present invention is shown. [Main component symbol description] S11~S16 process steps 1〇, 10', 10" Thermally conductive and insulating composite substrate 11 Thermally conductive and insulating substrate 12 Printed circuit board

136097.DOC 20 201038150 « « 13 金屬基板 • 14、15金屬材 20 連續式射出成型裝置 21 入料機構 22 送料機構 23 模頭 24 壓輪裝置 25 裁切裝置 〇 26絕緣材料 27 板狀基材 28 鋼輪 29 第一膜材 30 第二膜材 31 導熱絕緣基板 32 狹縫 ❹ I36097.DOC 21136097.DOC 20 201038150 « « 13 Metal substrate • 14,15 metal material 20 Continuous injection molding device 21 Feed mechanism 22 Feed mechanism 23 Die 24 Pressure roller device 25 Cutting device 〇 26 Insulation material 27 Plate substrate 28 Steel wheel 29 first film 30 second film 31 thermally conductive substrate 32 slit ❹ I36097.DOC 21

Claims (1)

201038150 七、申請專利範圍: i 一種導熱絕緣基板之製備方法,包含下列步驟: 對至少一陶瓷粉末進行水解縮合反應,以獲得至少一 改質陶曼粉末,其中各該至少一改質陶究粉末包含 改質粉末顆粒,而各該改質粉末顆粒之表面接枝 合物; a你 將該至少一改質陶竟粉末、—高分子材料和-固化劑 混合,以獲得一絕緣材料; ° ㈣絕緣材料擠壓通過—狹縫,以形成-板狀基材· 以及 ’ 刀別設置第一膜材及第二膜材於該板狀基材之二板面 上,而形成該導熱絕緣基板,其中該第一膜材及該第二膜 材係選自金屬材或離型材。 2.=據請求们之導熱絕,絲板之製備方法,其中該有機化 合物係有機石夕,而該水解縮合反應係在一冑性環境下,以 該有機矽對該至少一陶瓷粉末進行反應。 Ο 3. 2據請求们之導錢緣基板之製備方法,其巾該有機化 σ物係有機欽,而該水解縮合反應係在一酸性環境下,以 有機鈦對該至少一陶瓷粉末進行反應。 4.根據請求項2或3之導熱絕緣基板之製備方法,其中該酸性 環境之酸鹼值約在ΡΗ丨至?11 5之間。 5·根據請求項1之導熱絕緣基板之製備方法,其中該高分子 材料之成分包含熱塑型塑膠和熱固型環氧樹脂。 根據凊求項5之導熱絕緣基板之製備方法,其中該熱固型 每氧樹脂佔該高分子材料體積百分比介於7〇%至97〇/〇。 136097.DOC 22 201038150 * 曹 % 7. 根據請求項5之導熱絕緣基板之製備方法,其中該固化劑 以固化溫度將該高分子材料固化’而該固化溫度高於§ 〇 °C。 ' 8. 根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠係一超高分子量苯氧基樹脂。 9_根據請求項8之導熱絕緣基板之製備方法,其中該超高分 子置'本氧基樹脂之分子量係大於30000。 1〇·根據請求項5之導熱絕緣基板之製備方法,其中該熱固型 〇 環氧樹脂係未固化之液態環氧樹脂、聚合環氧樹脂、酚酚 環氧樹脂或紛甲烧樹脂。 11. 根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠及該熱固型環氧樹脂均係均勻相。 12. 根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠係包含一羥基-苯氧基樹脂醚高分子結構。 13. 根據請求項12之導熱絕緣基板之製備方法,其中該羥基_ 苯氧基樹脂醚高分子結構係經由雙環氧化物與雙官能基 Ο 物種經聚合反應而成。 14. 根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠係由液態環氧樹脂與雙酚Α反應而成。 15·根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠係由液態環氧樹脂與二價酸反應而成。 16. 根據請求項5之導熱絕緣基板之製備方法,其中該熱塑型 塑膠係由液態環氧樹脂與胺類反應而成。 17. 根據請求項1之導熱絕緣基板之製備方法,其中該至少一 陶瓷粉末佔該絕緣材料之體積百分比係介於4〇%至7〇% 136097.DOC 23 201038150 間。 18. 根據請求項!之導熱絕緣基板之製備方法,其中該至少一 陶究粉末係氮化物、氧化物或該氧化物與該氮化物之混合 物。 19. 根據請求項18之導熱絕緣基板之製備方法,其中該氮化物 係選自氮化鍅、氮化、氣化銘及氮化石夕所組成之群組。 20. 根據請求項18之導熱絕緣基板之製備方法,其巾該氧化物 _自氧化銘、氧化鎂、氧化辞、二氧化碎及二氧化鈦所 ^ 組成之群組。 21·根據請求項1之導熱絕緣基板之製備方法,其中將該絕緣 材料擠壓通過一狹縫之步驟包含下列步驟: 送料機構將一入料機構所提供之該絕緣材料擠壓通 過一模頭之該狹縫,以形成該板狀基材。 22·根據請求項1之導熱絕緣基板之製備方法,其中將該絕緣 材料擠壓通過該狹縫時之溫度介於5(TC至150t。 23. 根據請求項丨之導熱絕緣基板之製備方法,其中分別設置 ❹第-膜材及第二膜材於該板狀基材之二板面上之步驟,包 含下列步驟: 利用一壓輪裝置將該第一膜材及該第二膜材壓合於該 板狀基材之該板面上。 24. 根據請求項丨之導熱絕緣基板之製備方法,其中該金屬材 之材料係選自銅、|g、錄、銅合金、紹合金、鎳合金、銅 錦合金及銘銅合金。 25· 一種導熱絕緣複合基板之製備方法,包含下列步驟: 對至少一陶瓷粉末進行水解縮合反應,以獲得至少一 136097.DOC 24 201038150201038150 VII. Patent application scope: i A method for preparing a thermally conductive insulating substrate, comprising the steps of: performing a hydrolysis condensation reaction on at least one ceramic powder to obtain at least one modified Taoman powder, wherein each of the at least one modified ceramic powder The surface grafted compound comprising the modified powder particles and each of the modified powder particles; a. The at least one modified ceramic powder, the polymer material and the curing agent are mixed to obtain an insulating material; The insulating material is extruded through the slit to form a plate-shaped substrate, and the first film and the second film are disposed on the two plates of the plate-like substrate to form the thermally conductive insulating substrate. Wherein the first film and the second film are selected from a metal material or a release material. 2.= According to the heat conduction of the request, the method for preparing the silk plate, wherein the organic compound is an organic stone, and the hydrolysis condensation reaction is carried out in an inert environment, and the at least one ceramic powder is reacted with the organic germanium. . Ο 3. 2 According to the preparation method of the substrate of the money source of the request, the organic sigma compound is organically treated, and the hydrolysis condensation reaction is carried out by reacting the at least one ceramic powder with organic titanium in an acidic environment. . 4. The method of preparing a thermally conductive insulating substrate according to claim 2 or 3, wherein the pH of the acidic environment is about ΡΗ丨? Between 11 and 5. 5. The method of preparing a thermally conductive insulating substrate according to claim 1, wherein the component of the polymeric material comprises a thermoplastic plastic and a thermosetting epoxy resin. The method for preparing a thermally conductive insulating substrate according to claim 5, wherein the thermosetting type peroxy resin accounts for 7% to 97% by volume of the polymer material. 136097.DOC 22 201038150 *Cao % 7. The method of preparing the thermally conductive insulating substrate according to claim 5, wherein the curing agent cures the polymer material at a curing temperature, and the curing temperature is higher than § 〇 °C. 8. The method of producing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic type plastic is an ultrahigh molecular weight phenoxy resin. 9) The method for producing a thermally conductive insulating substrate according to claim 8, wherein the ultrahigh molecular weight of the present ethoxy resin is greater than 30,000. The method for producing a thermally conductive insulating substrate according to claim 5, wherein the thermosetting 环氧树脂 epoxy resin is an uncured liquid epoxy resin, a polymerized epoxy resin, a phenol phenol epoxy resin or a smoldering resin. 11. The method of preparing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic plastic and the thermosetting epoxy resin are homogeneous phases. 12. The method of preparing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic type plastic material comprises a monohydroxy-phenoxy resin ether polymer structure. 13. The method of producing a thermally conductive insulating substrate according to claim 12, wherein the hydroxyphenoxy resin ether polymer structure is formed by polymerization of a bisepoxide and a difunctional hydrazine species. 14. The method of preparing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic plastic is formed by reacting a liquid epoxy resin with bisphenol quinone. The method of preparing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic plastic is formed by reacting a liquid epoxy resin with a dibasic acid. 16. The method of preparing a thermally conductive insulating substrate according to claim 5, wherein the thermoplastic plastic is formed by reacting a liquid epoxy resin with an amine. 17. The method of preparing a thermally conductive insulating substrate according to claim 1, wherein the at least one ceramic powder comprises a volume percentage of the insulating material of between 4% and 7% by weight of 136097.DOC 23 201038150. 18. The method of preparing a thermally conductive insulating substrate according to claim 2, wherein the at least one ceramic powder is a nitride, an oxide or a mixture of the oxide and the nitride. 19. The method of preparing a thermally conductive insulating substrate according to claim 18, wherein the nitride is selected from the group consisting of tantalum nitride, nitriding, gasification, and nitriding. 20. The method of preparing a thermally conductive insulating substrate according to claim 18, wherein the oxide is a group consisting of oxides, magnesia, magnesia, oxidized granules, and titanium dioxide. The method of preparing a thermally conductive insulating substrate according to claim 1, wherein the step of extruding the insulating material through a slit comprises the following steps: the feeding mechanism extrudes the insulating material provided by a feeding mechanism through a die The slit is formed to form the plate-like substrate. The method of preparing a thermally conductive insulating substrate according to claim 1, wherein a temperature at which the insulating material is extruded through the slit is 5 (TC to 150 t. 23. According to the preparation method of the thermally conductive insulating substrate according to the claims, The step of separately setting the first film material and the second film material on the two plates of the plate substrate comprises the following steps: pressing the first film material and the second film material by using a pressure roller device The method of preparing the thermally conductive insulating substrate according to claim 2, wherein the material of the metal material is selected from the group consisting of copper, |g, recording, copper alloy, Shao alloy, nickel alloy , copper alloy and Ming copper alloy. 25. A method for preparing a thermally conductive and insulating composite substrate, comprising the steps of: performing a hydrolysis condensation reaction on at least one ceramic powder to obtain at least one 136097.DOC 24 201038150 合物; 改質陶究粉末包含複數個 面接枝一有機化 高分子材料和一固化劑 將該至少一改質陶瓷粉末、—高 混合,以獲得一絕緣材料; 以形成一板狀基材;The modified ceramic powder comprises a plurality of surface grafts, an organic polymer material and a curing agent, and the at least one modified ceramic powder is mixed to obtain an insulating material to form a plate-like substrate; 基板;以及 將該絕緣材料擠壓通過一狹縫,以 設置金屬材或離型材於該板狀基材 壓合複數片該導熱絕緣基板,而形 於一壓合溫度下, 成該導熱絕緣複合基板》 26. 根據请求項25之導熱絕緣複合基板之製備方法,其中該壓 合溫度介於80°C至220°C。 27. 根據晴求項25之導熱絕緣複合基板之製備方法,其中該導 熱絕緣複合基板包含單面板、雙面板、單面雙層板、金屬 核心板、多層板等結構。 28_根據請求項25之導熱絕緣複合基板之製備方法,其更包含 下列步驟: 以一成型技術,修整壓合後之該複數片導熱絕緣基板。 29.根據請求項28之導熱絕緣複合基板之製備方法,其中該成 型技術包含裁切、剪切、衝切、鑽石切等製程。 136097.DOC 25a substrate; and pressing the insulating material through a slit to set a metal material or a release material to press the plurality of the heat conductive insulating substrate on the plate substrate, and forming the heat conductive insulation composite at a pressing temperature Substrate 26. The method for producing a thermally conductive and insulating composite substrate according to claim 25, wherein the pressing temperature is between 80 ° C and 220 ° C. 27. The method of preparing a thermally conductive and insulating composite substrate according to the item 25, wherein the thermally conductive and insulating composite substrate comprises a single panel, a double panel, a single-sided double-layer plate, a metal core plate, a multilayer plate, or the like. The method of preparing a thermally conductive and insulating composite substrate according to claim 25, further comprising the step of: trimming the plurality of thermally conductive insulating substrates after pressing. 29. The method of preparing a thermally conductive and insulating composite substrate according to claim 28, wherein the molding technique comprises a process of cutting, shearing, punching, diamond cutting, and the like. 136097.DOC 25
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