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TW201037783A - Handler teaching method and handler itself - Google Patents

Handler teaching method and handler itself Download PDF

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Publication number
TW201037783A
TW201037783A TW98142105A TW98142105A TW201037783A TW 201037783 A TW201037783 A TW 201037783A TW 98142105 A TW98142105 A TW 98142105A TW 98142105 A TW98142105 A TW 98142105A TW 201037783 A TW201037783 A TW 201037783A
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TW
Taiwan
Prior art keywords
holding member
wafer
semiconductor wafer
flow rate
gas
Prior art date
Application number
TW98142105A
Other languages
Chinese (zh)
Other versions
TWI430389B (en
Inventor
Satoshi Nakamura
Yoshiyuki Kakisaka
Original Assignee
Seiko Epson Corp
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Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW201037783A publication Critical patent/TW201037783A/en
Application granted granted Critical
Publication of TWI430389B publication Critical patent/TWI430389B/en

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manipulator (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The present invention provides a handler teaching method and a handler, which are capable of very accurately acquiring the height of a grip member that comes into contact with the upper surface of a semiconductor chip with a simple configuration even if the back pressure of air that the grip member jets when put close to the upper surface of the semiconductor chip does not rise up to predetermined pressure. When a suction pad is moved down toward the IC chip disposed in a test socket, the suction pad is moved down while jetting the air from the distal end. Then a flow rate sensor detects the flow rate of the air jet from the distal end of the suction pad and the lowering position of the suction pad when the flow rate detected by the flow rate sensor decreases to a predetermined flow rate is registered as the height of the suction pad coming into contact with the upper surface of the IC chip in a storage means.

Description

201037783 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種處理機之教導方法及處理機。 【先前技術】 半導體元件於出廠前會由IC(Integrated Circuit,積體電 .路)檢查裝置進行檢查。1C檢查裝置亦稱作Ic處理機,該 1C處理機中包括測定機械手。該測定機械手係利用吸附墊 對半導體元件(半導體晶片)進行真空吸附並固持,且安裝 〇 於測試器之檢查用插座上。此時,半導體晶片一面受到特 定之力的按壓,一面被安裝於檢查用插座上。然後,在測 忒器之檢查結束後,測定機械手對安裝於檢查用插座上之 半導體晶片進行真空吸附而使其從檢查用插座上脫離,並 配置於與檢查結果對應之回收托盤(tray)中。 且說,由於一面利用吸附墊以特定之力按壓半導體晶片 -面將S安裝於檢查用插座上,&而當真空吸附安裝於檢 查用插座上之半導體晶片以將其卸除時,吸附墊會下降至 ° 較半導體晶片之上表面更低之位置而進行吸附。此時,對 半導體晶片經由吸附墊而施加下降機構之推力,從而存在 半導體晶片上施加有較大之負載而損傷之虞。又,相反 地,若吸附半導體晶片之高度猶有點高,則會由真空吸附 之空氣流而將半導體晶片朝上吸,從而存在如下問題:吸 附墊無法精度良好地吸附半導體晶片,而是在發生位置偏 移之狀態下,吸附塾進行吸附。 1C處理機(測定機械手)係於事前進行之教導作業中,由 144587.doc 201037783 操作人員目視而設定吸附高度位置,但因目視有極限而無 法教導高精度之高度位置,從而期望能以簡單之方法來教 導不會對半導體晶片施加負載之最佳高度位置的方法。 因此’提出-種於固持部前端部設置力感測器而不利用 目視進行教導之方法(專利文獻υ。又,提出—種於固持部 侧設置對目標進行檢測之位置檢測感測器而不利用目視進 行教導之方法(專利文獻2)。進而,提出_種於固持部設置 穿透式感測器而不利用目視進行教導之方法(專利文獻W。 然而’於專利文獻1中’力感測器價格高昂,尺寸亦較 大,會干擾工件等,故而實際上必需為裝卸式,使用非常 不便又’於專利文獻2及專利文獻3中,感測器會干擾檢 查用插座,尤其於BGA(Ball Grid Array,球拇陣列)或 CSP(Chip Scale Package,晶片尺寸封裝)等之無錯型半導 體晶片中’由於插座為槽形狀’因此在半導體晶片落座 (女裝)於插座上時’只要不想些辦法則無法自正側面 其狀態。 又,於該等各專散獻中,由於@持部中新追加用於教 導之治具’故而固持部之結構複雜化,用於教導之治具之 位置調整非常麻煩。而且,新追加治具而導致價格變高。 因=,作為可利用簡單之構成來高精度地求出固持=籌件 半V體sa片之上表面接觸之高度位置的處理機之教導方 法,提出如下方法:於未固持半導體晶片之狀態下,—面 自固持構件之下端噴射氣體,—面使該固持構件朝預先配 置於晶片配置位置上的半導體晶片之上表面移動,將自該 U45S7.doc 201037783 固持構件喷射之氣體之背壓成為預先設定之較高壓力時的 上述按壓機構之位置,作為該固持構件與上述半導體晶片 接觸之高度位置(專利文獻4)。 [先行技術文獻] [專利文獻] [專利文獻1 ]曰本專利特開平9-76183號公報 [專利文獻2]日本專利特開2004-288787號公報 [專利文獻3]曰本專利特開2004-193333號公報201037783 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a teaching method and a processing machine for a processor. [Prior Art] The semiconductor device is inspected by an IC (Integrated Circuit) inspection device before leaving the factory. The 1C inspection device is also referred to as an Ic processor, which includes a measurement robot. The measuring robot vacuum-adsorbs and holds the semiconductor element (semiconductor wafer) by the adsorption pad, and mounts it on the inspection socket of the tester. At this time, the semiconductor wafer is mounted on the inspection socket while being pressed by a specific force. Then, after the inspection of the tester is completed, the measurement robot vacuum-adsorbs the semiconductor wafer mounted on the inspection socket to be detached from the inspection socket, and is placed in a recovery tray corresponding to the inspection result. in. Moreover, since the semiconductor wafer is pressed with a specific force by a suction pad, the S is mounted on the inspection socket, and when the semiconductor wafer mounted on the inspection socket is vacuum-adsorbed to remove it, the adsorption pad will be Adsorption is carried out by dropping to a lower position than the upper surface of the semiconductor wafer. At this time, the thrust of the lowering mechanism is applied to the semiconductor wafer via the adsorption pad, so that a large load is applied to the semiconductor wafer and the damage is caused. On the contrary, if the height of the semiconductor wafer to be adsorbed is still somewhat high, the semiconductor wafer is sucked up by the air flow of the vacuum adsorption, and there is a problem that the adsorption pad cannot accurately adsorb the semiconductor wafer, but occurs. In the state of positional shift, the adsorption enthalpy is adsorbed. The 1C processor (measurement manipulator) is set in the teaching operation beforehand. The occupant height position is set by the operator from 144587.doc 201037783. However, due to the limit of the visual, the high-precision height position cannot be taught, so that it is expected to be simple. The method teaches a method that does not impose an optimum height position of the load on the semiconductor wafer. Therefore, it is proposed to provide a force sensor at the front end portion of the holding portion without using a visual teaching method (Patent Document 又. Further, it is proposed to provide a position detecting sensor for detecting a target on the holding portion side without A method of teaching by visual observation (Patent Document 2). Further, a method of providing a transmissive sensor in a holding portion without using a visual guide is proposed (Patent Document W. However, 'Patent Document 1' The detector is expensive and has a large size, which may interfere with the workpiece. Therefore, it is necessary to be a loading and unloading type, and it is very inconvenient to use. In Patent Document 2 and Patent Document 3, the sensor interferes with the inspection socket, especially for the BGA. (Ball Grid Array, CSP (Chip Scale Package)) or CSP (Chip Scale Package), etc. In the error-free semiconductor wafer, 'Because the socket is in the shape of a groove', when the semiconductor wafer is seated (women's clothing) on the socket, If you don't want to do something, you can't get the status from the side. In addition, in the special offerings, because of the newly added fixtures for teaching, the structure of the holding department is complicated. It is very troublesome to adjust the position of the jig for teaching. Moreover, the price is increased due to the addition of the jig. Because of the simple configuration, it is possible to obtain the holding of the semi-V body sa piece with high precision. The method for teaching a processor at the height of the upper surface contact proposes a method of ejecting gas from the lower end of the holding member in a state where the semiconductor wafer is not held, and the surface is placed in advance at the wafer arrangement position. Moving the upper surface of the semiconductor wafer, the position of the pressing mechanism when the back pressure of the gas ejected from the holding member of the U45S7.doc 201037783 is a predetermined high pressure, as the height position of the holding member in contact with the semiconductor wafer (Patent Document 4) [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open No. Hei 9-76183 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2004-288787 (Patent Document 3) Japanese Patent Laid-Open Publication No. 2004-193333

[專利文獻4]日本專利特開2008-124198號公報 【發明内容】 L發明所欲解決之問題] 然而,專利文獻4所揭示之方法存在如下問題:若使用 具有大氣開放埠之真空系對應單元來作為吸附半導體晶片 時使固持構件(吸附墊)之内部成負壓的真空供給用閥曰,曰則 自氣體供給機構供給至固持構件之氣體會逃“真空㈣ 應單元之大氣開放埠侧,故而即便將固持構疗:二 :導體“之上表面,自固持構件之前端噴射之氣 壓亦無法上升至預先設定之壓力。 ” 本發明係為了解決上述問題而完成者 :種處理機之教導方法及處理機,在將固持== :=ΓΓ_構件之前端噴出之氣體之背壓即 升至預先規疋的壓力,亦可利用 地求出固持構件與半導體晶片之上表面接了成高精度 [解決問題之技術手段] 鬲度位置。 144587.doc 201037783 本發月之·%樣之處理機之教導方法係用以對處理機進 行教導者,該處理機包括:按壓機構,其包括上下動作之 作動體,固持構件,其連接於上述作動體之下端部並固持 半導體晶片;及移動機構,其使上述按壓機構上下移動; 且將上述固持構件所固持之半導體晶片配置於晶片配置位 置’或者利用該固持槿侔决m姓曰 于稱件來固持晶片配置位置上所配置的 半導體晶片;該方法之特徵在於:於未固持上述半導體晶 片之狀態下’一面自上述固持構件之下端喷射氣體,—面 使该固持構件朝預先配置於晶片配置位置上的半導體晶片 之上表面移動,將自該固持構件嗔射之氣體之流量降低至 ::設定之流量時的上述按壓機構之位置,作為該固持構 牛與上述半導體晶片接觸的高度位置。 根據本發明之-態樣之處理機之教導方法,一 構件之下端噴射氣體,—面使固持構 晋 位置上的半導體晶片之上表面移動,在固持構 :至:導體晶片之上表面之位置時,自固持 出之氣體會受到半導體晶片之堵塞,從而自固持構件:! 端喷射之氣體之流量降低。因此,可於直接按 : 片之前來檢測固持構件與半導體晶片接觸之巧声位:體日日 而不會對半導體晶片施加較大之負载,而且::置,故 件靠近半導體晶片之上表面時自固持構件之前2出固:構 體之背壓即便未上升至預先規定之壓力,亦可利用礼 構成來高精度地求出固持構件與半導體晶片 s早之 之高度位置。 日日上表面接觸 144587.doc 201037783 本發月之另一態樣之處理 進行教導者,教導方法係用以對處理機 订教導者,該處理機包括··按 構件向卜t β π 機構,其包括受到彈性 之彈性支持之作動體;固持 述作動體之下端部並固持半# a μ 〃連接於上 I I U符牛導體晶片,·移 述按壓機構上下移動; 機構其使上 ^ , ,+,^ , 體驅動機構,其將氣體供給 上述知壓機構,並使由上述[Patent Document 4] Japanese Laid-Open Patent Publication No. 2008-124198. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The method disclosed in Patent Document 4 has a problem in that a vacuum system corresponding unit having an open atmosphere is used. As a vacuum supply valve for causing a negative pressure inside the holding member (adsorption pad) when the semiconductor wafer is adsorbed, the gas supplied from the gas supply mechanism to the holding member escapes from the atmosphere of the vacuum (four) unit. Therefore, even if the stent is held: 2: The upper surface of the conductor, the gas pressure injected from the front end of the holding member cannot rise to a preset pressure. The present invention has been completed in order to solve the above problems: the teaching method and the processing machine of the processing machine, the back pressure of the gas ejected at the front end of the holding == :=ΓΓ_ member is raised to the pre-regulated pressure, It is possible to determine the high precision of the holding member and the upper surface of the semiconductor wafer [technical means to solve the problem] 鬲 degree position. 144587.doc 201037783 The teaching method of the % of the processor is used to The processor performs a teaching device including: a pressing mechanism including an upper and lower acting actuating member, a holding member coupled to the lower end portion of the actuating body and holding the semiconductor wafer; and a moving mechanism that moves the pressing mechanism up and down And arranging the semiconductor wafer held by the holding member at the wafer arrangement position or using the holding member to hold the semiconductor wafer disposed at the wafer arrangement position; the method is characterized in that: Holding the semiconductor wafer in a state of 'spraying gas from the lower end of the holding member, the surface is placed in advance to the holding member Moving the upper surface of the semiconductor wafer at the wafer arrangement position, reducing the flow rate of the gas emitted from the holding member to: the position of the pressing mechanism when the flow rate is set, as the height of contact between the holding bovine and the semiconductor wafer According to the teaching method of the aspect of the invention, the gas is sprayed on the lower end of a member, and the surface of the semiconductor wafer is moved to the upper surface of the semiconductor wafer at the holding position: in the holding structure: to the upper surface of the conductor wafer At the position, the self-holding gas is blocked by the semiconductor wafer, so that the flow rate of the gas ejected from the holding member is reduced. Therefore, the contact between the holding member and the semiconductor wafer can be detected before the sheet is directly pressed: Bit: Body day does not impose a large load on the semiconductor wafer, and::, when the component is close to the upper surface of the semiconductor wafer, it is solidified before the self-holding member: the back pressure of the structure does not rise to the predetermined The pressure can also be used to determine the height position of the holding member and the semiconductor wafer s in advance with high precision. Contact 144587.doc 201037783 Another aspect of the present month is directed to the instructor, the teaching method being used to program the instructor of the processor, the processor comprising: a member to the t t π mechanism, which includes elasticity The elastic support is used as the moving body; the holding is described as the lower end of the moving body and holds the half # a μ 〃 connected to the upper IIU buffalo conductor wafer, and the moving mechanism is moved up and down; the mechanism makes the upper ^ , , +, ^ , body a drive mechanism that supplies gas to the pressure sensing mechanism and causes

It ^ ,g . ,a k坪注構件所彈性支持之作動 體在預先規定的最上端仇 mMm^. 一琅下端位置之間相對於該按 Ο Ο 機構而上下移動;且將上述固持構 片配置於晶片配w命罢斗、心 了 <干V體日日 配置位晉卜张 …。者利用該固持構件來固持晶片 夫 、配置的半導體晶片;該方法之特徵在於:於 未固持上述半導體晶片之狀雜 ’ T山A ㈣曰曰月之狀態下’―面自上述固持構件之 螭喷射氣體,一面使該固持構件 傅1干朝預先配置於晶片配置 之1體體晶片之上表面移動’將自該固持構件喷射 2體之'机量降低至預先設定之流量時的上述按壓機構之 ’作為該固持構件與上述半導體晶片接觸的高 置。 根據本發明之另一態樣之處理機之教導方法,一面自固 持構件之下端噴射氣體’ 一面使固持構件朝配置於晶片配 置位置上的半導體晶片之上表面移動,在固持構件之前端 移動至半導體晶片之上表面之位置時,自固持構件之前端 喷出之氣體會受到半導體晶片之堵塞,從而自固持構件之 前端喷射之氣體之流量降低。因此,可於直接按壓半導體 晶片之前來檢測固持構件與半導體晶片接觸之高度位置, 故而不會對半導體晶片施加較大之負載,而且,在將固持 144587.doc 201037783 構件靠近半導體晶片之上表面時自固持 e + 了僻1干之則端喷出之 氣體之背壓即便未上升至預先規定壓 至刀亦可利用簡單 之構成來南精度地求出固持構件與丰遵^种曰u 干命體曰日片之上表面接 觸之高度位置。 進而’即便由於某些原因而使固持構件之前端自半導體 晶片之上表面之位置進一步移動,亦因為固持構件㈠乍動 體)會相對於按壓機構進行相對移動,所以並無使半導體 晶片損傷之虞。 本發明之-態樣之處理機包括:按塵機構,《包括可在 上下方向移動之作動體;固持構件’其連接於±述作動體 之下端部並㈣半導體W ;移_構,其使上述按壓機 構上下移動;相對位置檢測機構,其檢測上述固持構件盘 上述㈣機構之相對位置;上下移動位置檢測機構,盆檢 測上述按壓機構之上下移動位置;及上下移動位置運算機 構,、根據來自上述上下移動位置檢測機構之檢測信號來 計算上述按壓機構之移動位置m述固持構件所固持 之半㈣晶;1配置於晶片配置位置,或者利用該固持構件 來固持晶片配置位置上所配置的半導體晶#;該處理機之 特徵在於設置有:氣體供給機構,其使氣體自上述固持構 件之前端喷射;流量檢測機構,其檢測由上述氣體供給機 構所供給且自上述固持構件之前端所噴射之氣體之流量是 否已降低至預先規疋的基準流量,·驅動控制機構,其使上 述氣體供給機構及上述移動機構進行㈣,―面自上述固 持構件之前端噴射氣體 —面使該固持構件朝預先配置於 144587.doc 201037783 :::置位置上的半導體晶月移動;及登錄 仇里檢挪機構檢測到自上述固持構件 达 之流詈,傅仵之别如所噴射之氣體 機構所呀算之上述基準流量時,將上述上下移動位置運算 * 位置作為該固持構件與上述半導體晶片 妾觸之兩度位置而登錄到記憶機構。 曰 置SSL之:態樣之處理機,在固持構件之前端朝配 持槿: 置上的半導體晶片之上表面移動時,自固 〇 前端喷射之氣體會受到配置於晶片配置位置二口 體曰曰片之堵塞。由於氣體之噴射受到堵塞, 持構件之前端喷射之氣體之流量降低至基準流量,並且= 檢測出該降低。登錄機構將此時的上下移動;: s=機構所計算之移動位置作為上述固持構件 S曰片接觸之高度位置而登錄到記憶機構。 體 因此’半導體晶片上不會施加較大之負 固持構件靠近半導體晶片之上表面時自固持構件之前2 0 =氣體之背壓即便未上升至預先規定之壓力,亦可利用 間早之構成尚精度地求出固持構件與半導體 接觸之高度位置。 上表面 本發明之另-態樣之處理機包括:按愿機構 :彈性構件向上方之彈性支持之作動體;固持構件:: ==下端部並固持半導體晶片;移動機構, 供給至上述㈣機構,並使由上述彈性構件所彈= 作動體在預先規定的最上端位置與最下端位置 2 J44587.doc 201037783 違按壓機構而上τ移動;相對位置檢測機構,其檢測上述 固持構件與上述按壓機構之相對位置;上下移動位置檢測 機構,其檢測上述按壓機構之上下移動位置;及上下移動 位置運算機構,其根據來自上述上下移動位置檢測機構之 檢測信號來計算上述按麼機構之移動位置;且將上述固持 構件所固持之半導體晶片配置於晶片配置位置,或者利用 •亥固持構件來固持晶片配置位置上所配置的半導體晶片; 該處理機之特徵在於設置有:氣體供給機構,其使氣體自 ^述固持構件之前端喷射,·流量檢測機構,其檢測由上述 氣體供給機構所供給且自上述固持構件之前端所喷射之氣 體之流量是否已降低至預先規定的基準流量;驅動控制機 構’其驅動控制上述作動體驅動機構、上述氣體供給機構 及上述移動機構’使上述作動體配置於預先規定的最上端 位置與最下端位置之間,並且一面自上述固持構件之前端 噴射氣體’-面使該固持構件朝預先配置於晶片配置位置 上的半導體晶片移動;及登錄機構,當上述壓力檢測機構 檢測到自上述固持構件之前端所喷射之氣體之流量已達到 上述基準流量時’將上述上下移動位置運算機構所計算之 移動位置作為該固持構件與上述半導體晶片接觸之高度位 置而登錄到記憶機構。 根據本發明之另-態樣之處理機,在固持構件之前 配置於晶片配置位置的半導體晶片之上表面移動時,自固 持構件之前端噴射之氣體會受_置於晶片配置位置 +導體晶片之堵塞。由於氣體之噴射受到堵塞,故而自固 I44587.doc 201037783 持構件之前端噴射之氣體之流量降低至基準流量,並且战 量檢測機構檢測出該降低。登錄機構將此時的上下務動: ,運算機構所計算之移動位置作為上述固持構件與半導體 晶片接觸之高度位置而登錄到記憶機構。 因此’半導體晶片上不會施加較大之負載,而且,在將 固持構件靠近半導體晶片之上表面時自固持構件之前端喷 出:氣體之背壓即便未上升至預先規定之壓力亦可利用 Ο 〇 簡單之構成高精度地求出固持構件與半導體晶片之上表面 接觸之高度位置。 進而,即便由於某些原因而使固持構件之前端自半導體 晶片之上表®之位置進一步移動,,亦會因為固持構件(作 動體)相對於按壓機構進行相對移動,所以並無使半導體 晶片損傷之虞。 【實施方式】 以下,根據圖1〜圖7來說明將本發明具體化為IC處理機 之第1實施形態。 圖1表示1C處理機10之構成之俯視圖。IC處理機⑺包 括:基座101、安全罩102、高溫腔室1〇3、供給機械手 1〇4、回收機械手1〇5、第!滑台1〇6、第2滑台1〇7、及複數 個輪送器C1〜C6。 基座101之上表面上搭載有上述要素。安全罩1〇2包圍基 座101之較大區域,於該安全罩之内部,收容有上述供給 機械手104、回收機械手105、第1滑台1〇6及第2滑台1〇7。 複數個輸送器C 1〜c6係以其一端部側位於安全罩i 〇2外 144587.doc 11 201037783 另而。P位於安全罩102内之方式而設置於基座101上。 各輸送器Cl C6將收容複數個作為半導體晶片之IC晶片τ 的托盤108自安全罩1〇2外搬送至安全罩⑽中,或相反地 將托盤1〇8自安全罩102中搬送至安全罩102外。 供、口機械手104係由X軸框Fx與第一 γ轴框ργι構成。回 收機械手105係由軸框FX與第:γ軸框構成。X轴 才、X配置於X方向上。第一 γ轴框及第二Y抽框π:係 、方向相互平行之方式而配置,且以可相對於上述X 軸框FX而於X方向上移動之方式受到支持。而且,第一γ 軸框F Υ1及第一 γ軸框F γ2係藉由設置於χ轴框π上之未圖 示之各個馬達而沿該X軸框F^x方向上往復移動。 〇 於第一 Y軸框FY1之下侧,供給側機械手掌單元ιι〇係以 可於Y方向移動之方式受到支持。供給側機械手掌單元11 〇 係藉由設置於第-Y軸框FY1上之未圖示之各個馬達而沿 Y軸框FY1於Y方向上往復移動〇而且供給側機械 手掌單元uo例如將輸送器C1之收容有檢查前之ic晶片τ的 托盤108供給至例如第】滑台丨〇6。 於第二Y軸框FY2之下側,回收側機械手掌單元lu係以 可於γ方向移動之方式受到支持。回收側機械手掌單元ui 係藉由設置於第二Y轴框FY2上之未圖示之各個馬達而沿 該^ 一Y軸框|7丫2於¥方向上往復移動。而且,供給側機械 手掌單元no例如將供給至第2滑台107之檢查後的ic晶片 供給至例如輸送器C8之托盤1〇8。 於高溫腔室103内,設置有測定機械手丨丨。測定機械手 i44587.doc -12- 201037783 11例如將供給至第1滑台106之檢查前之IC晶片τ安裝於檢 查用插座50上。安裝於檢查用插座5〇上之IC晶片τ受到電 性檢查。又,測疋機械手11將安裝於檢查用插座5〇上之檢 查結束後的1C晶片T供給至例如第2滑台1 〇7。 圖2表示測定機械手11之要部立體圖,測定機械手丨丨包 括接觸臂20。接觸臂20被設置成利用分別設置於測定機械 手11之機械手本體上之X軸馬達Μχ、γ軸馬達MY(均參照 圖5)而可相對於機械手本體於χ、γ方向上往復移動。 於接觸臂20上,固設有作為移動機構之ζ軸馬達ΜΖ。ζ 軸馬達ΜΖ包含伺服馬達,且包括編碼器SE丨,根據來自同 編碼S E1之檢測彳5就來檢測同一 Z轴馬達MZ之旋轉速 度、旋轉位置、及旋轉方向。 於接觸臂20上,在鄰接於ζ轴馬達MZ之位置處,利用上 下一對軸承22而可旋轉地支持有於ζ方向(上下方向)延伸 之滾珠螺桿2 1。自滾珠螺桿2 1上部之軸承2 2所突出之部分 上固著有從動滑輪23。從動滑輪23經由連結帶24而與固著 於Z軸馬達MZ之旋轉軸上的驅動滑輪25驅動連結。因此, 在Z軸馬達MZ進行正逆旋轉後,滾珠螺桿21經由驅動滑輪 25、連結帶24、及從動滑輪23而正逆旋轉。 於接觸臂20上,在Z軸馬達MZ與滾珠螺桿21之間,固設 著於Z方向(上下方向)延伸之導軌%。於導軌26上設置有 托架2 7,該托架2 7係以可沿同一導軌2 6移動之方式而設 置於該托架2 7上sx置有連結構件2 8。於連結構件2 8上, 設置有形成上述滾珠螺桿21所螺合之内螺紋的螺合部 144587.doc -13- 201037783 28a。因此,在Z軸馬達MZ(滾珠螺桿21)進行正逆旋轉後, 與滾珠螺桿21螺合之連結構件28(托架2乃可沿導執%進行 移動,故而會相對於接觸臂2〇而於z方向(上下方向)上往 復移動。 於連結構件28上,連結固定有安裝板29。安裝板29係自 連結構件28朝逆X方向(前方)延伸,於該連結構件28之下 表面上°又置有鈾後一對的順從單元(compliance unit) CU。 順從單元CU包括複數個(圖2中為2個)按壓裝置30。按壓 裝置30係固持(吸附保持)作為半導體晶片之IC晶片τ(參照 圖3)並將其按壓至設置於測試頭12上之檢查用插座5〇(參照 圖3)者,且固設於安裝板29之下表面。本實施形態中,由 於包括2個按壓裝置30,故而同時保持並搬送2個IC晶片 T。此外’順從單元CU可裝卸地連接於安裝板29上,並可 根據檢查對象之1C晶片T之個數及配置而適當更換。 其次,根據圖3來說明作為按壓機構之按壓裝置3〇。 於圖3中’按壓裝置30係由固設於連結基座31上之空氣 缸SL、及連結於該空氣缸SL前端部之元件夾頭Dc所構 成。 空氣缸SL中,壓缸管32之基端部固著於連結基座31上。 壓缸管32包括:有底筒狀之管本體32a、及堵塞管本體32a 之開口之前面板32b,在由管本體32&與前面板32b所形成 之缸室内,於Z方向(上下方向)可移動地配設有作為作動 體之活塞33。因此,缸室藉由活塞33而劃分為上側之第i 144587.doc -14- 201037783 室a、及下側之第2室b。 活塞33藉由下述的作為彈性構件之彈簧sp而朝上方抬 起,活塞33之第1室a侧之面位於與圖3所示之與管本體“a 之底面抵接的位置(以下,將其稱作最上端位置)。 於管本體32a之第1室a側之端部,形成有空氣導入口 34,於該空氣導入口 34上,安裝有第i連結埠ρι。第丨連結 淳P1經由空氣供給管R1(參照圖4)而連結於電動氣動調節 器61(參照圖4)。而且,在將空氣自電動氣動調節器61供給 〇 至第1室&後,活塞33藉由該空氣之壓力而自與管本體32a 之底面抵接之最上端位置起,抵抗元件夾頭Dc之彈簧Μ 之彈性力而向下方移動。 附帶而言,活塞33之衝程量係與從活塞%位於圖3中實 線所示之最上端位置時起直到活塞33之下表面抵接於前面 板32b之内側面之位置(最下端位置)為止的距離、即圖3所 示之第2室b之上下方向之間隔相一致。 〇 元件夾頭DC包括連結塊41,形成於其上表面上之連結 凸部41a經由形成於前面板奶上之貫通孔而與活塞以螺 釘N連接固因此’連結塊41(元件夹頭dc)係與活塞^ 一同於上下方向移動。 於連、’Ό塊41與連結基座3丨之間,連結有彈簧。亦 即,連結塊經由彈簣卯而相對於連結基座31彈性下吊。 而且,本實施形態中,彈簧SP經由連結塊41而上推活塞 33 ’以使活塞33位於最上端位置。然後,將空氣供給至第 1至a後,在其廢力之作用下,活塞會抵抗彈菁之彈性 144587.doc 15 201037783 力而向下方移動,不次岛丨;查县 +又㈤違最下端位置而抵接於前面板 32b,從而向下方之移動受到限制。The movable support of the It ^ , g . , ak ping member is moved up and down relative to the Ο Ο mechanism at a predetermined uppermost position; and the above-mentioned holding structure is configured In the wafer with w life and death, the heart < dry V body day configuration position Jin Bu Zhang .... The holding member is used to hold the wafer wafer and the disposed semiconductor wafer; the method is characterized in that the surface of the semiconductor wafer is not held by the semiconductor layer; When the gas is ejected, the holding mechanism is moved toward the upper surface of the body wafer which is disposed in advance on the wafer, and the pressing mechanism is configured to reduce the amount of the liquid from the holding member to a predetermined flow rate. 'As the holding member is placed in contact with the semiconductor wafer. According to another aspect of the present invention, in the method of the processor, a gas is ejected from the lower end of the holding member, and the holding member is moved toward the upper surface of the semiconductor wafer disposed at the wafer disposing position, and moved to the front end of the holding member to At the position of the upper surface of the semiconductor wafer, the gas ejected from the front end of the holding member is blocked by the semiconductor wafer, so that the flow rate of the gas ejected from the front end of the holding member is lowered. Therefore, the height position of the holding member in contact with the semiconductor wafer can be detected before the semiconductor wafer is directly pressed, so that no large load is applied to the semiconductor wafer, and when the member is held close to the upper surface of the semiconductor wafer, the member is held close to the upper surface of the semiconductor wafer. Self-holding e + 僻 1 干 则 则 则 则 则 则 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体The height position of the surface contact on the body sheet. Further, 'even if the front end of the holding member is further moved from the position of the upper surface of the semiconductor wafer for some reason, and because the holding member (a) swaying body) relatively moves relative to the pressing mechanism, the semiconductor wafer is not damaged. Hey. The processor of the present invention includes: a dust pressing mechanism, "including an actuator movable in the up and down direction; a holding member" connected to the lower end of the moving body and (4) a semiconductor W; The pressing mechanism moves up and down; the relative position detecting mechanism detects the relative position of the (4) mechanism of the holding member disk; the vertical moving position detecting mechanism detects the upper and lower moving position of the pressing mechanism; and the up and down moving position calculating mechanism The detection signal of the up-and-down moving position detecting means calculates the moving position of the pressing mechanism, and the half (tetra) crystal held by the holding member; 1 is disposed at the wafer arrangement position, or holds the semiconductor disposed at the wafer placement position by the holding member The processor is characterized in that: a gas supply mechanism is provided for injecting gas from the front end of the holding member; and a flow rate detecting mechanism that detects the supply from the gas supply mechanism and is ejected from the front end of the holding member Whether the flow of gas has been reduced to the pre-regulated baseline flow, a control mechanism that causes the gas supply mechanism and the moving mechanism to perform (d), "the surface of the gas-surface from the front end of the holding member, and the holding member is placed in a semiconductor crystal moon arranged in advance at a position of 144587.doc 201037783::: Moving; and logging in to the vengeance detecting mechanism to detect the flow from the holding member, and when the 基准 仵 仵 如 所 所 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 上下 上下 上下 上下 上下 上下 上下 上下 上下 上下 上下 上下 上下The semiconductor wafer is registered to the memory mechanism at two degrees of contact. The SSL processing device is configured such that when the front end of the holding member moves toward the upper surface of the holding semiconductor wafer, the gas ejected from the front end of the fixing member is disposed in the wafer arrangement position. The blockage of the sepals. Since the injection of the gas is blocked, the flow rate of the gas injected at the front end of the holding member is lowered to the reference flow rate, and = the decrease is detected. The registration mechanism moves up and down at this time;: s = the movement position calculated by the mechanism is registered as the height position of the holding member S contact, and is registered to the memory mechanism. Therefore, the semiconductor substrate does not apply a large negative holding member close to the upper surface of the semiconductor wafer. Before the self-holding member 20 = the back pressure of the gas does not rise to a predetermined pressure, The height position at which the holding member is in contact with the semiconductor is accurately determined. The upper surface of the processor of the present invention includes: a pressing mechanism: an elastic supporting member of the elastic member upward; a holding member:: == a lower end portion and holding the semiconductor wafer; and a moving mechanism is supplied to the (4) mechanism And moving the above-mentioned elastic member to the uppermost position and the lowermost position 2 J44587.doc 201037783 by the above-mentioned elastic member; the relative position detecting mechanism detects the holding member and the pressing mechanism a relative position; a vertical movement position detecting mechanism that detects an upward movement position of the pressing mechanism; and a vertical movement position calculating unit that calculates a movement position of the pressing mechanism based on a detection signal from the vertical movement position detecting mechanism; Arranging a semiconductor wafer held by the holding member at a wafer arrangement position or holding a semiconductor wafer disposed at a wafer arrangement position by using a holding member; the processor is characterized in that: a gas supply mechanism is provided to allow gas to be self-contained ^The front end of the holding member is sprayed, the flow detecting mechanism, Detecting whether the flow rate of the gas supplied from the gas supply mechanism and injected from the front end of the holding member has decreased to a predetermined reference flow rate; the drive control mechanism 'driving and controlling the actuator drive mechanism, the gas supply mechanism, and The moving mechanism 'disposes the actuator between a predetermined uppermost position and a lowermost position, and ejects the gas '-plane from the front end of the holding member to face the semiconductor in advance at the wafer arrangement position a wafer moving; and a registration mechanism, when the pressure detecting means detects that the flow rate of the gas injected from the front end of the holding member has reached the reference flow rate, the moving position calculated by the up-and-down moving position calculating means is used as the holding member The height of the semiconductor wafer is in contact with the memory device. According to another aspect of the present invention, when the upper surface of the semiconductor wafer disposed at the wafer arrangement position is moved before the holding member, the gas ejected from the front end of the holding member is subjected to being placed at the wafer arrangement position + the conductor wafer Blocked. Since the injection of the gas is blocked, the flow rate of the gas injected from the front end of the member is lowered to the reference flow rate, and the volume detecting mechanism detects the decrease. The registration mechanism shifts the upper and lower movements at this time: the movement position calculated by the calculation means is registered as the height position of the holding member in contact with the semiconductor wafer, and is registered in the memory mechanism. Therefore, a large load is not applied to the semiconductor wafer, and when the holding member is brought close to the upper surface of the semiconductor wafer, the front end of the holding member is ejected: the back pressure of the gas can be utilized even if it is not raised to a predetermined pressure. The simple configuration is to determine the height position of the holding member in contact with the upper surface of the semiconductor wafer with high precision. Further, even if the front end of the holding member is further moved from the position of the upper surface of the semiconductor wafer for some reason, the holding member (actuator) is relatively moved with respect to the pressing mechanism, so that the semiconductor wafer is not damaged. After that. [Embodiment] Hereinafter, a first embodiment in which the present invention is embodied as an IC processor will be described with reference to Figs. 1 to 7 . FIG. 1 is a plan view showing the configuration of the 1C processor 10. The IC processor (7) includes a base 101, a safety cover 102, a high temperature chamber 1〇3, a supply robot 1〇4, a recovery robot 1〇5, and a first! The slide table 1〇6, the second slide table 1〇7, and a plurality of rounders C1 to C6. The above elements are mounted on the upper surface of the susceptor 101. The safety cover 1〇2 surrounds a large area of the base 101, and the supply robot 104, the recovery robot 105, the first slide table 1〇6, and the second slide table 1〇7 are housed inside the safety cover. A plurality of conveyors C 1 to c6 are located outside the safety cover i 〇 2 with one end side thereof 144587.doc 11 201037783. The P is placed on the susceptor 101 in such a manner as to be located inside the safety cover 102. Each of the conveyors Cl C6 transports a tray 108 containing a plurality of IC wafers τ as semiconductor wafers from the safety cover 1〇2 to the safety cover (10), or conversely transports the trays 1〇8 from the safety cover 102 to the safety cover. 102 outside. The supply and mouth robot 104 is composed of an X-axis frame Fx and a first γ-axis frame ργι. The recovery robot 105 is composed of a shaft frame FX and a γ-axis frame. The X axis and X are arranged in the X direction. The first γ-axis frame and the second Y-frame π are arranged such that the directions are parallel to each other, and are supported so as to be movable in the X direction with respect to the X-axis frame FX. Further, the first γ-axis frame F Υ1 and the first γ-axis frame F γ2 are reciprocated in the X-axis frame F^x direction by the respective motors (not shown) provided on the χ-axis frame π.之下 On the lower side of the first Y-axis frame FY1, the supply-side mechanical palm unit ιι〇 is supported in such a manner as to be movable in the Y direction. The supply-side mechanical palm unit 11 is reciprocated in the Y direction along the Y-axis frame FY1 by the respective motors (not shown) provided on the first-Y-axis frame FY1, and the supply-side mechanical palm unit uo, for example, the conveyor For example, the tray 108 in which the ic wafer τ before inspection is accommodated in C1 is supplied to, for example, the first stage 丨〇6. On the lower side of the second Y-axis frame FY2, the recovery-side mechanical palm unit lu is supported in such a manner as to be movable in the γ direction. The recovery-side robot palm unit ui is reciprocated in the ¥ direction along the Y-axis frame|7丫2 by the respective motors (not shown) provided on the second Y-axis frame FY2. Further, the supply-side manipulator unit no, for example, supplies the inspected ic wafer supplied to the second stage 107 to, for example, the tray 1〇8 of the conveyor C8. A measuring robot is provided in the high temperature chamber 103. Measurement robot i44587.doc -12- 201037783 11 For example, the IC wafer τ before inspection to be supplied to the first slide table 106 is attached to the inspection socket 50. The IC wafer τ mounted on the inspection socket 5 is electrically inspected. Further, the measuring robot 11 supplies the 1C wafer T after the inspection on the inspection socket 5 is completed to, for example, the second stage 1 〇7. Fig. 2 is a perspective view showing the principal part of the measuring robot 11, and the measuring robot includes a contact arm 20. The contact arm 20 is provided to reciprocate in the χ and γ directions with respect to the robot body by the X-axis motor Μχ and the γ-axis motor MY (both refer to FIG. 5 ) respectively provided on the robot body of the measuring robot 11 . . On the contact arm 20, a cymbal motor 作为 as a moving mechanism is fixed. The 轴 axis motor ΜΖ includes a servo motor and includes an encoder SE 丨 to detect the rotational speed, rotational position, and rotational direction of the same Z-axis motor MZ based on the detection 彳 5 from the same code S E1 . On the contact arm 20, a ball screw 21 extending in the x-direction (up-and-down direction) is rotatably supported by a pair of upper and lower bearings 22 at a position adjacent to the x-axis motor MZ. A driven pulley 23 is fixed to a portion of the bearing 2 2 at the upper portion of the ball screw 2 1 . The driven pulley 23 is drivingly coupled to a drive pulley 25 fixed to a rotating shaft of the Z-axis motor MZ via a connecting belt 24. Therefore, after the Z-axis motor MZ performs the forward and reverse rotation, the ball screw 21 rotates forward and backward via the drive pulley 25, the coupling belt 24, and the driven pulley 23. On the contact arm 20, between the Z-axis motor MZ and the ball screw 21, a guide rail % extending in the Z direction (up-and-down direction) is fixed. A bracket 2 7 is provided on the guide rail 26, and the bracket 27 is disposed on the bracket 27 so as to be movable along the same rail 26, and a coupling member 28 is placed on the bracket sx. A screwing portion 144587.doc -13 - 201037783 28a which forms an internal thread to which the ball screw 21 is screwed is provided on the coupling member 28. Therefore, after the Z-axis motor MZ (ball screw 21) is rotated forward and backward, the coupling member 28 that is screwed to the ball screw 21 (the bracket 2 is movable along the guide %, and thus the contact arm 2 is opposed to the contact arm 2). The mounting member 29 is coupled to and fixed to the connecting member 28. The mounting plate 29 extends from the connecting member 28 in the reverse X direction (front) on the lower surface of the connecting member 28. And a pair of compliance unit CUs with uranium. The compliant unit CU includes a plurality of (two in Fig. 2) pressing devices 30. The pressing device 30 holds (adsorbs and holds) the IC wafer as a semiconductor wafer. τ (refer to FIG. 3) is pressed to the inspection socket 5〇 (see FIG. 3) provided on the test head 12, and is fixed to the lower surface of the mounting plate 29. In this embodiment, since two are included Since the device 30 is pressed, the two IC chips T are held and transported at the same time. The compliant unit CU is detachably connected to the mounting board 29, and can be appropriately replaced according to the number and arrangement of the 1C wafers T to be inspected. As a press machine according to FIG. In Fig. 3, the pressing device 30 is composed of an air cylinder SL fixed to the coupling base 31 and a component chuck Dc coupled to the front end portion of the air cylinder SL. The base end portion of the cylinder tube 32 is fixed to the joint base 31. The cylinder tube 32 includes: a bottomed cylindrical tube body 32a, and an opening front panel 32b for blocking the tube body 32a, in the tube body 32& In the cylinder chamber formed by the front panel 32b, a piston 33 as an actuator is movably disposed in the Z direction (up and down direction). Therefore, the cylinder chamber is divided into the upper side by the piston 33, i 144587.doc -14 - 201037783 chamber a, and the second chamber b on the lower side. The piston 33 is lifted upward by the spring sp as an elastic member, and the surface of the piston 33 on the side of the first chamber a is located as shown in FIG. A position abutting on the bottom surface of the pipe main body "a (hereinafter referred to as the uppermost end position). An air introduction port 34 is formed at an end portion of the pipe main body 32a on the first chamber a side, and the air introduction port 34 is formed in the air introduction port 34. The i-th connection 安装ρι is attached to the top. The first connection 淳P1 is connected to the electric power via the air supply pipe R1 (see FIG. 4). The pneumatic regulator 61 (refer to Fig. 4). Further, after the air is supplied from the electro-pneumatic regulator 61 to the first chamber & the piston 33 is abutted from the bottom surface of the pipe body 32a by the pressure of the air. From the uppermost position, it moves downward against the elastic force of the spring Μ of the component chuck Dc. Incidentally, the stroke amount of the piston 33 is from the time when the piston % is located at the uppermost position shown by the solid line in Fig. 3 until The distance from the lower surface of the piston 33 to the position (lowest end position) of the inner side surface of the front panel 32b, that is, the interval between the upper and lower directions of the second chamber b shown in Fig. 3 coincides. The cymbal component chuck DC includes a coupling block 41, and the coupling convex portion 41a formed on the upper surface thereof is connected to the piston by a screw N via a through hole formed in the front panel milk, so that the coupling block 41 (component chuck dc) It moves in the up and down direction together with the piston ^. A spring is coupled between Yulian, the block 41 and the connecting base 3丨. That is, the connecting block is elastically suspended from the joint base 31 via the magazine. Further, in the present embodiment, the spring SP pushes up the piston 33' via the coupling block 41 so that the piston 33 is at the uppermost position. Then, after the air is supplied to the first to the a, under the action of its waste force, the piston will move downwards against the elasticity of the phthalocyanine, not counting the island; the county + (5) is the most The lower end position abuts against the front panel 32b, so that the downward movement is restricted.

於連結塊41上,凹設有下 > 而由A w。又令卜衣面中央位置,自該凹設之位 置朝外側面形成有|诵;f丨,M + 又$員通礼藉此形成真空導引路42。而On the joint block 41, the recess is provided with lower > and by A w. Further, the center position of the cloth surface is formed, and from the position of the recess, the outer side surface is formed with a side surface, and a vacuum guide path 42 is formed by the M+ and the member. and

且’於連結41之外侧面夕吉办道ρ丨nA 「w ®之·具空導引路42上,安裝有第2 連結埠P2。 於連結塊41之下側,連結固著有中間塊杓,於該中間塊 43之下侧連結固著有導引塊44。於中間塊似導引塊料之 中央位置上,分別貫通形成有與形成於連接塊“上之真空 導引路42連通之收容孔,於該等收容孔中配設有吸引管 45 ° 於吸引管45之前端部,連結固著有具有吸引^晶片丁之 吸引口46a的吸附墊46β而且,使吸引管杉内成負壓之狀 態,藉此,如圖3所示,吸附墊46吸附保持冗晶片τ。相反 地,解除吸引管45内之負壓,藉此,將吸附墊私所吸附保 持之ic晶片τ配置於例如設置在測試頭12上之檢查用插座 50上。 於連結塊41之外側面上,由螺栓48固定有被檢測片47。 被檢測片47係藉由將其前端部固設於連結基座3丨上之作為 相對位置檢測機構之包含光耦合器的相對位置檢測感測器 SE2而檢測。詳細而言,相對位置檢測感測器SE2檢測與 活塞33(元件夾頭DC)之上下方向之移動一同進行上下移動 之被檢測片47的移動位置,即,活塞33(元件夾頭〇(:)與壓 缸管3 2之相對位置。 144587.doc •16- 201037783 再者,於本實施形態中,相對位置檢測感測器SE2之檢 測信號係以如下方式而設定:#活塞33自最上端位置側向 最下端位置側通過最上端位置與最下端位置之中間位置 時,由「斷開」信號切換為「接通」信號,相反地,當自 最下端位置侧向最上端位置側通過中間位置時,由「接 通」信號切換為「斷開」信號。 如圖3所示,於測試頭12上,設置有檢查用插座%。檢 查用插座5〇之上端設置有包含接觸部5丨之彈簧銷52,其個 〇數為1C晶片T之端子數。彈簧銷52相對於檢查用插座5〇以 特定之衝程而上下動作。而且,在向下方壓下1(:晶片丁 後’ 1C晶片τ之各端子自上方與分別對應之接觸部川氏 接’並向下方壓下彈簧銷52。 藉此,1C晶片τ之各端子與檢查用插座5〇之接觸部電 性接觸’於該狀態下進行電性檢查。然後,於檢查結束 後,藉由元件夾頭DC將檢查完的IC晶片τ自檢查用插座5〇 〇上拔起,並根據其檢查結果而搬送至未圖示之收納部。 接下來’根據圖4來說明如上所述構成之測定機械手u 之氣動迴路。 一 -〜3碉即态〇 i矬由 空氣供給管R1而連結於第!連結埠ρι,將空氣供給至壓缸 官'第心,並且調整該第…内之空氣之壓力。然 sp ^第1内之工⑽力之作用下,活塞33會抵抗彈簧 sp之彈性力而相對於壓缸管32進行上下移動 於吸me晶片τ時使吸附塾46之内部成為負壓的真空發 M4587.doc 17 201037783 生器對應單元62包括串聯連接之2個真空發生器62 1、 622,於該等真空發生器621、622中之下流側的真空發生 器621内,自作為氣體供給機構之正壓電路63經由電磁閥 B1而供給壓縮空氣等之加壓氣體。 真空發生器對應單元62之真空發生器621包括吸引埠 621a,第2連結埠p2經由進氣管R2及過濾器?而連接於該吸 引埠621。另一方面,真空發生器對應單元“之真空發生 器622包括吸引埠622a,第2連結璋p2經由進氣管R2、過濾 器F及止回閥B3而連接於該吸引埠622a。 作為氣體供給機構之正壓電路63係經由氣體供給管R3、 電磁閥B2及進氣管R2而連接於第2連結埠p2。正壓電路63 包括噴出泵,生成正壓源。而且,正壓電路63使連通於第 2連結埠P2之真空導引路42内成為正壓之狀態’藉此使壓 縮空氣等氣體自吸附墊46噴射。 於第2連結埠P2與電磁閥B2之間之配管们上,設置有作 為流量檢測機構之流量感測器65,其檢測自吸附墊牝之吸 引口 46a噴出之氣體(例如壓縮空氣)之流量。於本實施形態 中,在藉由正壓電路63而使吸引管45内成為正壓之狀態且 自吸附墊46噴射壓縮空氣等之氣體時,當吸附墊仏之吸引 口 46a被逐漸堵塞時,自吸引口 40a噴出之氣體之流量會逐 漸下降。 其次,同樣根據圖5來說明測定機械手n之電性構成。 於圖5中’作為驅動控制機構、作動體移動控制機構、 及按壓機構移動控制機構之控制裝置7〇包括: 144587.doc •18· 201037783 CPU(Central Processing Unit,中央處理單元)7〇Α、 ROM(Read Only Memory,唯讀記憶體)7〇Β、及 RAM(Rand〇m Access Memory,隨機存取記憶體)7〇c。控 制裝置70根據所儲存之各種資料及各種控制程式而實行如 下處理:於檢查用插座50上安裝檢查前之ic晶片τ之處 理;自檢查用插座50吸附固持檢查後的IC晶片丁並將其卸 除之處理;及對按塵裝置3G(吸附塾46)與安裝於檢查用插 ❹ 〇 座5〇上的IC晶片T接觸之高度位置進行教導之處理等。 於控制裝置70上,連接有包括各種操作開關與顯示器之 輸入輸出裝置7卜輸人輸出裝置71顯示敎機械手u所實 行之各種處理之處理狀況。輸人輸出裝置71將指示開始實 行上述各處理之信號、及用於實行各處理之初期值資料等 輸入至控制裝置70。 於控制裝置70上’連接有電動氣動調節器驅動電路〜 控制裝置70將驅動控制信號輸出至電動氣動調節器驅動電 路72。電動氣動調節器驅動電路72響應來自控制裝置川之 驅動控制信號而使電動氣動調節器61進行驅動, 給至壓虹管32之第1室a,調整第⑴内之空氣之壓力。… 於控制裝置7G上’連接有電磁閥驅動電路73。控制裝置 7〇將驅動控制信號輪出至電磁閥驅動電路73。電磁閥驅動 電路73響應來自控制穿閃驅動 纟"j裝置70之驅動控制信號而對電磁閥B1 及切換電磁閥B2分別進行切換控制。 例如,於吸附IC晶片丁時,控制裝置7。係以打開 B1、關閉電磁閥B2之方彳^ 方式進行控制。亦即,利用真空發 144587.doc •19- 201037783 生器62丨、622使吸引管45内成為負壓,從而使吸附墊粍可 吸附保持ic晶片τ。又’在求出吸附墊46與安裝於檢查用 插座50上的1C晶片T之上表面接觸時之按壓裝置3〇(吸附墊 46)之高度位置的教導動作中,控制裝置7〇係以打開電磁 閥B2、關閉電磁閥81之方式進行控制。亦即,利用正壓 電路63使吸引管45内成為正壓狀態,從而使加壓氣體自吸 附墊46噴射。 於控制裝置70上,連接有X軸馬達驅動電路75。控制裝 置70將驅動控制信號輸出至χ軸馬達驅動電路75。X軸馬 達驅動電路75響應來自控制裝置7〇之驅動控制信號而使χ 轴馬達MX進行正逆旋轉,使接觸臂2〇相對於機械手本體 而於X方向上往復移動。 於控制裝置70上,連接有γ軸馬達驅動電路%。控制裝 置70將驅動控制信號輸出至丫軸馬達驅動電路%。γ軸馬And 'the second link 埠P2 is attached to the w 之 具 丨 A A A w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w w导引, a guiding block 44 is fixedly coupled to the lower side of the intermediate block 43. At a central position of the intermediate block like the guiding block, a vacuum guiding path 42 formed on the connecting block is respectively formed to communicate with each other. The receiving hole is provided with a suction pipe 45° at a front end of the suction pipe 45 in the receiving hole, and an adsorption pad 46β having a suction port 46a for attracting the wafer is fixed and fixed, and the suction tube is negatively formed. In the state of the pressure, as shown in FIG. 3, the adsorption pad 46 adsorbs and holds the redundant wafer τ. Conversely, the negative pressure in the suction pipe 45 is released, whereby the ic wafer τ which is adsorbed and held by the suction pad is disposed, for example, on the inspection socket 50 provided on the test head 12. On the outer side surface of the joint block 41, the detected piece 47 is fixed by a bolt 48. The detected piece 47 is detected by a relative position detecting sensor SE2 including a photocoupler as a relative position detecting means, which has its distal end portion fixed to the coupling base 3A. In detail, the relative position detecting sensor SE2 detects the moving position of the detected piece 47 that moves up and down together with the movement of the piston 33 (the component chuck DC) in the up and down direction, that is, the piston 33 (the component chuck 〇 (: The position relative to the cylinder tube 32. 144587.doc •16- 201037783 Furthermore, in the present embodiment, the detection signal of the relative position detecting sensor SE2 is set as follows: #Piston 33 from the uppermost end When the position side lowermost end position side passes the middle position between the uppermost end position and the lowermost end position, the "off" signal is switched to the "on" signal, and conversely, the middle side from the lowermost position side to the uppermost position side passes through the middle. In the position, the "ON" signal is switched to the "OFF" signal. As shown in Fig. 3, the test socket is provided with the inspection socket %. The upper end of the inspection socket 5 is provided with the contact portion 5丨. The number of turns of the spring pin 52 is the number of terminals of the 1C wafer T. The spring pin 52 is moved up and down with respect to the inspection socket 5 特定 with a specific stroke. Further, 1 is pressed downward (after wafer dicing ' 1C) Each terminal of the wafer τ The pair is connected to the corresponding contact portion, and the spring pin 52 is pressed downward. Thereby, each terminal of the 1C wafer τ is electrically contacted with the contact portion of the inspection socket 5〇, and electrical inspection is performed in this state. Then, after the inspection is completed, the IC wafer τ that has been inspected is pulled up from the inspection socket 5 by the component chuck DC, and is transported to a storage unit (not shown) based on the inspection result. The pneumatic circuit of the measuring robot u configured as described above will be described with reference to Fig. 4. One to three states, the state is connected to the first connecting port by the air supply pipe R1, and the air is supplied to the cylinder officer' The first heart, and adjust the pressure of the air in the first... However, under the action of the first working force (10), the piston 33 will move up and down relative to the cylinder tube 32 against the elastic force of the spring sp. When the wafer τ is used, the inside of the adsorption crucible 46 becomes a vacuum of the negative pressure M4587.doc 17 201037783 The bio-corresponding unit 62 includes two vacuum generators 62 1 and 622 connected in series, among the vacuum generators 621 and 622 In the vacuum generator 621 on the downstream side, it is supplied as a gas. The positive pressure circuit 63 of the mechanism supplies pressurized gas such as compressed air via the electromagnetic valve B1. The vacuum generator 621 of the vacuum generator corresponding unit 62 includes a suction 埠 621a, and the second connection 埠p2 passes through the intake pipe R2 and the filter. The vacuum generator 622 includes a suction 埠 622a, and the second connection 璋 p2 is connected via the intake pipe R2, the filter F, and the check valve B3. The positive pressure circuit 63 as a gas supply means is connected to the second connection 埠p2 via the gas supply pipe R3, the electromagnetic valve B2, and the intake pipe R2. The positive pressure circuit 63 includes a discharge pump to generate a positive pressure source. Further, the positive pressure circuit 63 causes the inside of the vacuum guide passage 42 that communicates with the second coupling bore P2 to be in a positive pressure state, whereby gas such as compressed air is ejected from the adsorption pad 46. The piping between the second connecting port P2 and the electromagnetic valve B2 is provided with a flow rate sensor 65 as a flow rate detecting means for detecting the flow rate of the gas (for example, compressed air) ejected from the suction port 46a of the adsorption pad. . In the present embodiment, when the inside of the suction pipe 45 is brought into a positive pressure by the positive pressure circuit 63 and a gas such as compressed air is injected from the adsorption pad 46, when the suction port 46a of the adsorption pad is gradually blocked, The flow rate of the gas ejected from the suction port 40a gradually decreases. Next, the electrical configuration of the measuring robot n will be described based on Fig. 5 as well. In Fig. 5, the control device 7 as the drive control mechanism, the actuator movement control mechanism, and the pressing mechanism movement control mechanism includes: 144587.doc • 18· 201037783 CPU (Central Processing Unit) 7〇Α, ROM (Read Only Memory) 7〇Β, and RAM (Rand〇m Access Memory) 7〇c. The control device 70 performs a process of mounting the ic wafer τ before the inspection on the inspection socket 50 based on the stored various data and various control programs; and sucking and holding the IC wafer after inspection from the inspection socket 50 and The processing of the removal; and the processing of the height position of the dust-collecting device 3G (adsorption 塾 46) and the IC wafer T mounted on the inspection cymbal cymbal 5 进行 are taught. The control device 70 is connected to an input/output device 7 including various operation switches and displays, and the input and output device 71 displays the processing status of various processes performed by the robot u. The input/output device 71 inputs a signal instructing to start the above-described respective processes, an initial value data for executing each process, and the like to the control device 70. An electropneumatic regulator drive circuit is connected to the control unit 70. The control unit 70 outputs a drive control signal to the electropneumatic regulator drive circuit 72. The electropneumatic regulator drive circuit 72 drives the electropneumatic regulator 61 in response to a drive control signal from the control unit, and supplies it to the first chamber a of the pressure vessel 32 to adjust the pressure of the air in the first (1). The solenoid valve drive circuit 73 is connected to the control unit 7G. The control device 7 turns the drive control signal to the solenoid valve drive circuit 73. The solenoid valve drive circuit 73 performs switching control of the solenoid valve B1 and the switching solenoid valve B2 in response to a drive control signal from the control of the drive-by-drive device. For example, when the IC wafer is adsorbed, the device 7 is controlled. It is controlled by opening B1 and closing solenoid valve B2. That is, the inside of the suction tube 45 is made a negative pressure by the vacuum 144587.doc • 19-201037783, 62 丨, 622, so that the adsorption pad can adsorb and hold the ic wafer τ. Further, in the teaching operation of determining the height position of the pressing device 3 (adsorption pad 46) when the adsorption pad 46 is in contact with the upper surface of the 1C wafer T mounted on the inspection socket 50, the control device 7 is opened. The electromagnetic valve B2 and the electromagnetic valve 81 are closed to control. That is, the positive pressure circuit 63 causes the inside of the suction pipe 45 to be in a positive pressure state, so that the pressurized gas is ejected from the suction pad 46. An X-axis motor drive circuit 75 is connected to the control device 70. The control device 70 outputs a drive control signal to the x-axis motor drive circuit 75. The X-axis motor drive circuit 75 rotates the spindle motor MX forward and backward in response to a drive control signal from the control unit 7 to reciprocate the contact arm 2'' in the X direction with respect to the robot body. A γ-axis motor drive circuit % is connected to the control device 70. The control device 70 outputs a drive control signal to the x-axis motor drive circuit %. Γ-axis horse

達驅動電路76響應來自控制裝置7〇之驅動控制信號而使Y 轴馬達MY進行正逆旋轉,使接觸臂2〇相對於機械手本體 而於Y方向上往復移動。 於控制裝置70上,連接有2軸馬達驅動電路77。控制裝 置70將驅動控制信號輸出至2軸馬達驅動電路77。z軸馬達 驅動電路77響應來自控制裝置7〇之驅動控制信號而使㉔ 馬達殿進行正逆旋轉,使㈣裝置30相對於接觸臂20(機 械手本體)而上下移動。 於控制裝置70上,連接有編碼器SE1。控制裝置70輸入 來自編碼器SE1之檢測信號,並計算按壓裝置3〇(吸附塾 I44587.doc -20- 201037783 46)相對於接觸臂2〇之相對位置。詳細而言,控制裝置7〇 根據所計算出的相對位置,來計算吸附墊46之吸附面與安 裝於檢查用插座50上之1C晶片T之上表面接觸時的按壓裝 置30(吸附墊46)之高度位置,並登錄到RAM 70C。 於控制裝置70上,連接有相對位置檢測感測器SE2。控 制裝置70輸入來自相對位置檢測感測器SE2之接通.斷開之 檢測信號,並檢測活塞33(元件夾頭DC)與壓缸管32之相對 位置。詳細而言,控制裝置70根據檢測信號,來判斷活塞 〇 3 3自最上端位置側向最下端位置側是否已通過最上端位置 與最下端位置之中間位置,以及相反地自最下端位置側向 最上端位置側是否已通過中間位置。 於控制裝置70上,連接有流量感測器65。控制裝置7〇輸 入來自流量感測器65之信號,並檢測在使吸附墊46下降時 自吸附墊46之吸引口 46a喷出之加壓氣體的流量。詳細而 言,在自吸附墊46之下端喷射之氣體之流量降低至預先規 定的基準流量時,控制裝置70根據檢測信號判斷為吸附墊 V 46之吸引口 46a接觸到1C晶片T而被堵塞。 其次’根據圖6所示之表示控制裝置7〇之動作的流程, 來說明如上所構成的求出吸附墊46與安裝於測定機械手j J 之檢查用插座50上之1C晶片T之上表面接觸時的高度位置 的教導處理動作。 當前,於檢查用插座50上,將1C晶片T預先安裝於該檢 查用插座50上。此時,電磁閥B1、電磁閥B2均為關閉狀 態。又’活塞3 3配置於最上端位置。 144587.doc 21 201037783 由s亥狀態起’為了教導吸附塾46與檢查用插座$〇上ic晶 片T之上表面接觸時的高度位置,自輸入輸出裝置71輸出 用以教導之開始信號。 控制裝置70首先驅動控制X軸馬達Μχ、γ軸馬達Μγ、 及Ζ軸馬達ΜΖ,將按壓裝置3〇、即吸附墊46導引至安裝於 教導對象之檢查用插座5〇上的ic晶片τ之預先規定之正上 方位置(步驟S1-1)。 在將吸附墊46導引至IC晶片τ之預先規定之正上方位置 後,控制裝置7 0控制電動氣動調節器6 1,將空氣供給至壓 缸管32之第1室a,使活塞33進行向下移動(步驟S1_2)。 此時,控制裝置70將空氣供給至墨缸管η之第1室a,直 至相對位置檢測感測器SE2之檢測信號自「斷開」信號切 換為「接通」信號為止(步驟Sl_3)。在相對位置檢測感測 器SE2之檢測信號自「斷開」信號切換為「接通」信號(步 驟S1-3中’ YES)後,控制裝置7〇控w電動氣動調節器61, 停止對壓缸官32之第1室3供給空氣(步驟S1_句。即控制 裝置70使活塞33停止在最上端位置與最下端位置間的中間 位置。 其次,控制裝置70打開電磁閥B2,連結正壓電路〇與第 2連結埠P2,使吸引管45内成為正壓狀態並自吸附墊牝喷 射空氣(步驟S1_5)。繼而,控制裝置70驅動控制Z轴馬達 歐’使按塵裝置30(吸附墊46)向位於正下方之安裝於檢查 用插座50上的1C晶片T進行向下移動(步驟S1_6)。 於》亥向下移動中’控制裝置7〇根據來自編碼器SE i之檢 144587.doc -22· 201037783 測h號來计算此時的按壓裝置(吸附墊46)之高度位置。 在一面自吸附墊46噴射空氣一面使按壓裝置3〇(吸附墊 46)向下移動時,控制裝置7〇取入自流量感測器65輸出之 L號’並檢測自吸附墊46之前端(吸引口 46a)喷出之氣體之 流量(步驟S1-7)。 然後’如圖7所示’不久吸附墊46會與IC晶片τ之上表面 接觸。在吸附墊46與1C晶片丁之上表面接觸後,吸附墊46 之吸引口 46a被堵塞。若吸附墊46靠近IC晶片τ之上表面, Ο 則自吸引口 46a喷出之氣體之流量會逐漸減少,當自吸引 口 46a喷出之氣體之流量降低至預先規定之基準量時,控 制裝置70判斷吸附墊46與1(:晶片丁之上表面已接觸(步驟 Sl-8、S1-9)。然後,控制裝置7〇根據此前來自編碼器sei 之檢測信號,將所計算出的按壓裝置(吸附墊46)之高度位 置記憶於RAM 70C内,並且將高度位置輸出至輪入輪出裝 置71而顯示於顯示器上(步驟sj_9)。 ◎ 繼而,在登錄一個檢查用插座5〇上之吸附墊46之吸附高 度位置時,控制裝置7〇關閉電磁閥B2,停止自吸附墊Μ喷 射氣體(步驟skio)。繼而,控制裝置7〇使2軸馬達Mz進行 逆轉,使按壓裝置(吸附墊46)向上移動至預先規定之特定 之上方位置(步驟S1-11)。 然後,控制裝置70在使按壓裝置3 〇向上移動至預先規定 之上方位置後,一個檢查用插座5〇上之吸附墊46之吸附高 度位置的教導結束。 其次,以下記載如上所構成之實施形態之效果。 144587.doc -23- 201037783 ⑴根據上述實施形態,一面自吸附墊46喷射氣體,一 面使吸附墊46朝預先配置於檢查用插座%上的1(:晶片τ之 上表面進行向下移動。然後,當吸附墊46與ic晶片τ之上 表面接觸^ ’自吸附塾46喷射之氣體受到IC晶片τ之堵 塞’從而流量感測器65檢測到自吸附墊46之吸引口 46a喷 出之氣體之流量降低。因此,藉由判斷流量感測器65所檢 測之氣體之流量是否已減少至預先規定的基準流量,而可 檢測吸附墊46與1C晶片T之上表面之接觸,從而控制裝置 70可檢測此時的高度位置。而且,僅利用一面自吸附墊46 噴射氣體一面進行向下移動並由流量感測器65檢測自吸附 墊46之吸引口 46a所喷出之氣體之流量的簡單方法,便可 高精度地檢測吸附墊46吸附1C晶片T之吸附高度位置。 又,在將吸附墊46靠近1C晶片T之上表面時,自吸附墊 46噴出之氣體之背壓即便未上升,亦可利用簡單之構成高 精度地求出吸附墊46與1C晶片T之上表面接觸的高度位 置。 (2)根據上述實施形態,一面自吸附墊46喷射氣體一面 進行向下移動’利用流量感測器65檢測自吸附墊46喷出之 氣體之流量。即,利用既有之吸附墊46及配管R2(吸引管 45)等。換言之’藉由切換電磁闊B1、電磁閥的而使吸附 墊46進行原本的IC晶片τ之吸附外’亦可將其使用於教導 處理動作。因此,按壓裝置30上不必新設置使用於教導之 特別的治具即可,從而能以非常簡單的構成進行高精度的 高度位置之檢測。 M4587.doc -24- 201037783 (3)根據上述實施形態,在檢測吸附Ic晶片τ之吸附高 度位置時,係於將活塞33相對於壓缸管32而配置於中間位 置之狀態下進行。因此,即便由於某些原因而使吸附墊46 自1C晶片Τ之上表面之位置進一步向下方移動,亦會因為 活塞33相對於壓缸管32進行向上移動,所以不會對ic晶片 T施加較大負載’從而並無使其損傷之虞。 此外’上述實施形態亦能以如下方式進行變更。 於上述實施形態中,在使按壓裝置3〇進行向下移動時, 自電動氣動調節器61供給空氣而使活塞33移動至最上端位 置與最下端位置之中間位置來實施,但並不限定於該中間 位置,只要在最上端位置與最下端位置之間,則可為任意 位置。 於上述實施形癌中,求出配置於檢查用插座5 〇上的IC晶 片τ之上表面之尚度位置,但並不限定於此,亦可應用於 收納有檢查前的1C晶片之供給托盤之槽内的IC晶片之上表 面之高度位置之檢測,或者應用於收納有檢查後的1€晶片 之回收托盤之槽内的1C晶片之上表面之高度位置之檢測。 此外,亦可應用於6又置在I c處理機中之加熱板之槽内的 1C晶片之上表面之高度位置之檢測,或者應用於在配置於 檢查用插座50之前用於待機之槽、或在搬送至回收托盤之 刖用於待機之槽内的1C晶片之上表面之高度位置之檢測。 於上述實施形態中,在元件夾頭DC之連結塊41與連結 基座3 1之間連結有彈簧SP ’彈性支持活塞33(元件夾頭 DC)。亦可在活塞33之下表面與壓缸管32之前面板32b之間 144587.doc -25- 201037783 配置有彈性構件,彈性支持活塞33(元件夾頭Dc)。當然, 除上述實施形態之彈箐SP以外,還可在活塞33之下表面與 壓缸管32之前面板32b之間配置彈性構件來實施。 又,尤其對於上述實施形態’亦可應用於包括並未以彈 簧sp來彈性支持活塞33(元件夾頭DC)之測定機械手之冗處 理機。 於上述各實施形態中,如圖3及圖7所示,使吸附墊牝成 唇形狀。若1C晶片T為平坦,則吸附墊46之形狀可為帶有 與1C晶片之外形尺寸相符之突起的樹脂或金屬之吸附墊。 即,在與1C晶片T之上表面接觸時僅該突起最先接觸,藉 此,於第1實施形態中可使壓力上升,或者於第2實施形態 中可使活塞33為開始進行向上移動之吸附墊形狀。 於上述實施形態中,利用空氣缸SL而使元件夾頭Dc(吸 附墊46)進行上下移動,但並不限定於此。例如亦可利用 膜片或風箱(bellows)等而使元件夾頭〇(:(吸附墊46)進行上 下移動。 於上述實施形態中,具體化為設置於1(:處理機中之測定 機械手11,但並不限定於此’亦可應用於例如用以將1〇晶 片自第1配置位置搬送至第2配置位置的搬送裝置。 於上述實施形態中,使用有真空發生器對應單元,但亦 可使用具有大氣開放埠AP之真空泵對應單元64(參照圖 8)。此外,於圖8中,641為真空供給用導向閥,642為真 空供給^,642為真空破壞用導向間,66為真空源,八?為 閥用過ί慮器。 144587.doc •26· 201037783 【圖式簡單說明】 圖1係ic處理機之俯視圖; 圓2係用於說明…處理機中所包括之測定機械手的整體 立體圖; 圖3係用於說明設置於測定機械手上之按壓裝置的剖面 ' 圖; 圖4係測定機械手之空氣氣動迴路圖;The drive circuit 76 causes the Y-axis motor MY to rotate forward and backward in response to the drive control signal from the control unit 7 to reciprocate the contact arm 2 于 in the Y direction with respect to the robot body. A 2-axis motor drive circuit 77 is connected to the control device 70. The control device 70 outputs a drive control signal to the 2-axis motor drive circuit 77. The z-axis motor drive circuit 77 rotates the 24 motor temple forward and backward in response to a drive control signal from the control unit 7 to move the (4) device 30 up and down with respect to the contact arm 20 (robot body). An encoder SE1 is connected to the control unit 70. The control unit 70 inputs the detection signal from the encoder SE1 and calculates the relative position of the pressing device 3 (adsorption 塾 I44587.doc -20 - 201037783 46) with respect to the contact arm 2〇. Specifically, the control device 7 calculates the pressing device 30 (adsorption pad 46) when the adsorption surface of the adsorption pad 46 comes into contact with the upper surface of the 1C wafer T mounted on the inspection socket 50 based on the calculated relative position. The height position and login to RAM 70C. A relative position detecting sensor SE2 is connected to the control device 70. The control device 70 inputs a detection signal from the on/off of the relative position detecting sensor SE2, and detects the relative position of the piston 33 (the component chuck DC) to the cylinder tube 32. Specifically, the control device 70 determines, based on the detection signal, whether or not the piston bore 3 3 has passed the intermediate position between the uppermost end position and the lowermost end position from the uppermost end position side to the lowermost end position side, and conversely from the lowermost end position side. Whether the uppermost position side has passed the intermediate position. A flow sensor 65 is connected to the control device 70. The control unit 7 receives the signal from the flow sensor 65 and detects the flow rate of the pressurized gas ejected from the suction port 46a of the adsorption pad 46 when the adsorption pad 46 is lowered. In detail, when the flow rate of the gas injected from the lower end of the adsorption pad 46 is lowered to a predetermined reference flow rate, the control device 70 determines that the suction port 46a of the adsorption pad V 46 is in contact with the 1C wafer T and is clogged based on the detection signal. Next, the upper surface of the 1C wafer T on which the adsorption pad 46 and the inspection socket 50 attached to the measurement robot j J are formed as described above will be described based on the flow of the operation of the control device 7 shown in FIG. The teaching of the height position at the time of contact handles the action. Currently, the 1C wafer T is preliminarily mounted on the inspection socket 50 on the inspection socket 50. At this time, the solenoid valve B1 and the solenoid valve B2 are both closed. Further, the piston 3 3 is disposed at the uppermost position. 144587.doc 21 201037783 From the state of shai, the start signal for teaching is output from the input/output device 71 in order to teach the height position of the suction cymbal 46 in contact with the surface of the inspection socket $ on the upper surface of the ic wafer T. The control device 70 first drives and controls the X-axis motor Μχ, the γ-axis motor Μγ, and the Ζ-axis motor ΜΖ, and guides the pressing device 3〇, that is, the suction pad 46 to the ic wafer τ mounted on the inspection socket 5〇 of the teaching object. The predetermined upper position (step S1-1). After guiding the adsorption pad 46 to a predetermined upper position of the IC wafer τ, the control device 70 controls the electro-pneumatic regulator 161 to supply air to the first chamber a of the cylinder tube 32 to cause the piston 33 to perform Move down (step S1_2). At this time, the control device 70 supplies air to the first chamber a of the cylinder tube n until the detection signal of the relative position detecting sensor SE2 is switched from the "off" signal to the "on" signal (step S1_3). After the detection signal of the relative position detecting sensor SE2 is switched from the "off" signal to the "on" signal (YES in step S1-3), the control device 7 controls the electric electropneumatic regulator 61 to stop the pressing. The first chamber 3 of the cylinder 32 supplies air (step S1_). That is, the control device 70 stops the piston 33 at an intermediate position between the uppermost position and the lowermost position. Next, the control device 70 opens the electromagnetic valve B2 to connect the positive pressure. The circuit 〇 and the second connection 埠P2 cause the inside of the suction pipe 45 to be in a positive pressure state and eject air from the adsorption pad (step S1_5). Then, the control device 70 drives and controls the Z-axis motor to make the dust-receiving device 30 (adsorption pad) 46) moving downward to the 1C wafer T mounted on the inspection socket 50 directly below (step S1_6). In the "downward movement", the control device 7 is based on the inspection from the encoder SE i 144587.doc -22· 201037783 The h position is measured to calculate the height position of the pressing device (adsorption pad 46) at this time. When the air is ejected from the adsorption pad 46 while the pressing device 3 (adsorption pad 46) is moved downward, the control device 7 Extracting the output from the flow sensor 65 'And detecting the flow rate of the gas ejected from the front end (suction port 46a) of the adsorption pad 46 (step S1-7). Then, as shown in Fig. 7, the adsorption pad 46 will contact the upper surface of the IC wafer τ. After the adsorption pad 46 is in contact with the upper surface of the 1C wafer, the suction port 46a of the adsorption pad 46 is blocked. If the adsorption pad 46 is close to the upper surface of the IC wafer τ, the flow rate of the gas ejected from the suction port 46a is gradually reduced. When the flow rate of the gas ejected from the suction port 46a is lowered to a predetermined reference amount, the control device 70 judges that the adsorption pads 46 and 1 (the upper surface of the wafer is in contact with each other (steps S1-8, S1-9). Then, the control device 7 记忆 stores the calculated height position of the pressing device (adsorption pad 46) in the RAM 70C based on the detection signal from the encoder sei, and outputs the height position to the wheel-in/off device 71. Displayed on the display (step sj_9) ◎ Then, when registering the adsorption height position of the adsorption pad 46 on the inspection socket 5, the control device 7 turns off the electromagnetic valve B2, and stops the injection of gas from the adsorption pad (step skio Then, control The two-axis motor Mz is reversed to move the pressing device (adsorption pad 46) upward to a predetermined upper position (step S1-11). Then, the control device 70 moves the pressing device 3 〇 upward to After the predetermined upper position, the teaching of the position of the adsorption height of the adsorption pad 46 on the inspection socket 5 is completed. Next, the effect of the embodiment configured as described above will be described below. 144587.doc -23- 201037783 (1) According to the above implementation In the form, the gas is ejected from the adsorption pad 46, and the adsorption pad 46 is moved downward toward the upper surface of the wafer τ, which is placed on the inspection socket %. Then, when the adsorption pad 46 is in contact with the upper surface of the ic wafer τ, the gas ejected from the adsorption cymbal 46 is blocked by the IC wafer τ, and the flow sensor 65 detects the gas ejected from the suction port 46a of the adsorption pad 46. The flow rate is reduced. Therefore, by determining whether the flow rate of the gas detected by the flow sensor 65 has decreased to a predetermined reference flow rate, the contact between the adsorption pad 46 and the upper surface of the 1C wafer T can be detected, so that the control device 70 can detect the time. Height position. Further, the adsorption can be detected with high precision by a simple method in which the gas is ejected downward from the adsorption pad 46 and the flow rate of the gas ejected from the suction port 46a of the adsorption pad 46 is detected by the flow rate sensor 65. The pad 46 adsorbs the adsorption height position of the 1C wafer T. Further, when the adsorption pad 46 is brought close to the upper surface of the 1C wafer T, the back pressure of the gas ejected from the adsorption pad 46 can be accurately obtained by using a simple configuration to obtain the adsorption pad 46 and the 1C wafer T. The height position of the surface contact. (2) According to the above embodiment, the gas is ejected downward from the adsorption pad 46, and the flow rate of the gas ejected from the adsorption pad 46 is detected by the flow rate sensor 65. That is, the existing adsorption pad 46 and the pipe R2 (suction pipe 45) and the like are used. In other words, the adsorption pad 46 can be used for the teaching processing operation by switching the electromagnetic width B1 and the electromagnetic valve to cause the adsorption pad 46 to adsorb the original IC wafer τ. Therefore, it is not necessary to newly install a special jig for teaching, and it is possible to perform high-precision height position detection with a very simple configuration. (3) According to the above embodiment, when the adsorption height position at which the Ic wafer τ is adsorbed is detected, the piston 33 is placed in the intermediate position with respect to the cylinder tube 32. Therefore, even if the adsorption pad 46 is moved further downward from the position of the upper surface of the 1C wafer cassette for some reason, the piston 33 is moved upward relative to the cylinder tube 32, so that the ic wafer T is not applied. The large load 'has not caused any damage. Further, the above embodiment can be modified as follows. In the above embodiment, when the pressing device 3 is moved downward, air is supplied from the electro-pneumatic regulator 61, and the piston 33 is moved to the intermediate position between the uppermost position and the lowermost position. However, the present invention is not limited thereto. The intermediate position may be any position as long as it is between the uppermost position and the lowermost position. In the above-described cancer, the position of the upper surface of the IC wafer τ disposed on the inspection socket 5 is determined. However, the present invention is not limited thereto, and may be applied to a supply tray in which the 1C wafer before inspection is accommodated. The detection of the height position of the upper surface of the IC wafer in the groove or the detection of the height position of the upper surface of the 1C wafer in the groove of the recovery tray containing the inspected 1 € wafer. In addition, it can also be applied to the detection of the height position of the upper surface of the 1C wafer in the groove of the heating plate disposed in the IC processor, or to the groove for standby before being disposed in the inspection socket 50, Or the detection of the height position of the upper surface of the 1C wafer in the tank for standby after being transported to the recycling tray. In the above embodiment, the spring SP 'elastic support piston 33 (component chuck DC) is coupled between the coupling block 41 of the component chuck DC and the coupling base 31. It is also possible to arrange an elastic member between the lower surface of the piston 33 and the front panel 32b of the cylinder tube 32, and to elastically support the piston 33 (the component chuck Dc). Of course, in addition to the magazine SP of the above embodiment, an elastic member may be disposed between the lower surface of the piston 33 and the front panel 32b of the cylinder tube 32. Further, in particular, the above embodiment can be applied to a redundant machine including a measuring robot that does not elastically support the piston 33 (component chuck DC) by the spring sp. In each of the above embodiments, as shown in Figs. 3 and 7, the suction pad is formed into a lip shape. If the 1C wafer T is flat, the shape of the adsorption pad 46 may be a resin or metal adsorption pad having protrusions conforming to the dimensions of the 1C wafer. In other words, when the surface is in contact with the upper surface of the 1C wafer T, only the projections are first contacted, whereby the pressure can be increased in the first embodiment, or the piston 33 can be moved upward in the second embodiment. Adsorption pad shape. In the above embodiment, the component chuck Dc (the suction pad 46) is moved up and down by the air cylinder SL, but the invention is not limited thereto. For example, the element chuck 〇 (: (adsorption pad 46) can be moved up and down by a diaphragm, a bellows, or the like. In the above embodiment, it is embodied in a measuring machine provided in 1 (: processing machine) The hand 11 is not limited thereto, and may be applied to, for example, a transfer device for transporting a 1-inch wafer from the first arrangement position to the second arrangement position. In the above embodiment, a vacuum generator corresponding unit is used. However, a vacuum pump corresponding unit 64 having an open atmosphere AP (see Fig. 8) may be used. Further, in Fig. 8, 641 is a vacuum supply guide valve, 642 is a vacuum supply, and 642 is a vacuum break guide, 66 For the vacuum source, eight? is used for the valve. 144587.doc •26· 201037783 [Simplified illustration] Figure 1 is a top view of the ic processor; Circle 2 is used to illustrate... the measurement included in the processor Figure 3 is a cross-sectional view of the pressing device provided on the measuring robot; Figure 4 is a view of the air-pneumatic circuit of the measuring robot;

圖5係表示測定機械手之電性構成的電路圖; 圖6係表示控制裝置之動作的流程圖,· 圖7係表示吸附墊與IC晶片之上表面接觸之狀態的示 圖;及 圖8係表示本發明之另一實施形態的示圖。 【主要元件符號說明】 10 1C處理機 11 測定機械手 30 按壓裝置 32 壓缸管 32a 管本體 33 活塞 46 吸附墊 47 檢測片 50 檢查用插座 61 電動氣動調節器 62 真空發生器對應單元 144587.doc -27- 201037783 63 正壓電路 65 流量感測器 70 控制裝置 70A CPU 70B ROM 70C RAM B1 ' B2 電磁閥 DC 元件夾頭 MZ Z轴馬達 SE1 編碼益 SE2 相對位置檢測感測器 SL 空氣缸 SP 彈簧 T 1C晶片 144587.doc - 28 -5 is a circuit diagram showing the electrical configuration of the measuring robot; FIG. 6 is a flow chart showing the operation of the control device, and FIG. 7 is a view showing a state in which the adsorption pad is in contact with the upper surface of the IC wafer; A view showing another embodiment of the present invention. [Main component symbol description] 10 1C processor 11 Measuring robot 30 Pressing device 32 Cylinder tube 32a Tube body 33 Piston 46 Adsorption pad 47 Test piece 50 Inspection socket 61 Electropneumatic regulator 62 Vacuum generator corresponding unit 144587.doc -27- 201037783 63 Positive voltage circuit 65 Flow sensor 70 Control device 70A CPU 70B ROM 70C RAM B1 'B2 Solenoid valve DC component chuck MZ Z axis motor SE1 Code benefit SE2 Relative position detection sensor SL Empty cylinder SP spring T 1C chip 144587.doc - 28 -

Claims (1)

201037783 七、申請專利範圍: 1. 一種處理機之教導方法,其係用以對處理機進行教導 者,該處理機包括: 按壓機構,其包括上下動作之作動體; 固持構件,其連接於上述作動體之下端部並固持半導 * 體晶片;及 移動機構,其使上述按壓機構上下移動;且 將上述固持構件所固持之半導體晶片配置於晶片配置 〇 位置,或者利用該固持構件來固持晶片配置位置上所配 置的半導體晶片; 該方法之特徵在於: 於未固持上述半導體晶片之狀態下,一面自上述固持 構件之下端喷射氣體,—面使該固持構件朝預先配置於 晶片配置位置上的半導體晶片之上表面移動,將自該固 持構件噴射之氣體之流量降低至預先設定之流量時的上 述按Μ機構之位置,作為該固持構件與上述半導體晶片 W 接觸的高度位置。 2. -種處理機之教導方其係用以對處理機進行教導 者’該處理機包括: 按壓機構,其包括受到彈性構件向上方之彈性支持之 作動體; 固持構件纟連接於上述作動體之下端部並固持半導 體晶片; 移動機構,其使上述按壓機構上下移動;及 144587.doc 201037783 作動體驅動機構,其將氣體供給至上述按壓機構,並 使由上述彈性構件所彈性支持之作動體在預先規定的最 上端位置與最下端位置之間相對於該按壓機構而上下移 動;且 將上述固持構件所固持之半導體晶片配置於晶片配置 位置,或者利用該固持構件來固持晶片配置位置上所配 置的半導體晶片; 該方法之特徵在於: 於未固持上述半導體晶片之狀態下,一面自上述固持 構件之下端噴射氣體,—面使該固持構件朝預先配置於 晶片配置位置上的半導體晶片之上表面移動,將自該固 持構件噴射之氣體之流量降低至預先設定之流量時的上 述按壓機構之位置’作為該固持構件與上述半導體晶片 接觸的高度位置。 3· 一種處理機,其包括: 按壓機構’其包括可在上下方向移動之作動體; 固持構件,其連接於上述作動體之下端部並固持 體晶片; 移動機構,其使上述按壓機構上下移動; 相對位置檢測機構,其檢測上述固持構件與上述按壓 機構之相對位置; 上下移動位置檢測機構,其檢測上述按壓機構之上下 移動位置;及 上下移動位置運算機構, 其根據來自上述上下移動位 144587.doc 201037783 號來計算上述按壓機構之移動位 置檢測機構之檢測信 置;且 配置於晶片配置 配置位置上所配 將上述固持構件所固持之半導體晶片 位置,或者利用該固持構件來固持晶片 置的半導體晶片; 該處理機之特徵在於設置有: 氣體供給機様,盆你々胁; 之前端喷 m 其使乳體自上述固持構件 射;201037783 VII. Patent application scope: 1. A method for teaching a processor for teaching a processor, the processor comprising: a pressing mechanism including an upper and lower acting actuating body; a holding member connected to the above a lower end portion of the movable body and holding the semiconductor wafer; and a moving mechanism for moving the pressing mechanism up and down; and arranging the semiconductor wafer held by the holding member at a position of the wafer arrangement or holding the wafer by the holding member Disposing a semiconductor wafer disposed at a position; the method is characterized in that: in a state in which the semiconductor wafer is not held, gas is ejected from a lower end of the holding member, and the holding member is disposed in advance at a wafer arrangement position The upper surface of the semiconductor wafer is moved to lower the flow rate of the gas ejected from the holding member to a position of the pressing mechanism at a predetermined flow rate as a height position at which the holding member contacts the semiconductor wafer W. 2. A processor for teaching a processor for teaching a processor. The processor includes: a pressing mechanism including an actuator that is elastically supported upward by the elastic member; and the holding member is coupled to the actuator a lower end portion holding the semiconductor wafer; a moving mechanism for moving the pressing mechanism up and down; and 144587.doc 201037783 a driving mechanism for supplying gas to the pressing mechanism and an elastic body supported by the elastic member Moving up and down with respect to the pressing mechanism between the predetermined uppermost position and the lowermost position; and arranging the semiconductor wafer held by the holding member at the wafer arrangement position, or holding the wafer arrangement position by the holding member The semiconductor wafer is disposed; the method is characterized in that: in a state in which the semiconductor wafer is not held, a gas is ejected from a lower end of the holding member, and the holding member is disposed on a semiconductor wafer previously disposed at a wafer arrangement position Surface movement, will spray from the holding member The position of the above pressing mechanism when the flow rate of the injected gas is lowered to a predetermined flow rate is taken as the height position at which the holding member comes into contact with the semiconductor wafer. 3. A processor comprising: a pressing mechanism that includes an actuator movable in an up and down direction; a holding member coupled to a lower end portion of the actuator and holding the body wafer; and a moving mechanism that moves the pressing mechanism up and down a relative position detecting mechanism that detects a relative position of the holding member and the pressing mechanism; a vertical moving position detecting mechanism that detects an upward moving position of the pressing mechanism; and a vertical moving position calculating mechanism that is based on the up and down moving position 144587 .doc No. 201037783 calculates the detection information of the moving position detecting mechanism of the pressing mechanism, and arranges the position of the semiconductor wafer held by the holding member at the wafer arrangement arrangement position, or holds the wafer by the holding member. a semiconductor wafer; the processor is characterized in that: a gas supply device is provided, the basin is threatened; and the front end is sprayed with m to cause the milk to be ejected from the holding member; 抓里檢測機構’其檢測由上述氣體供給機構所供給且 自上述固持構件之前端所喷射之氣體之流量是否已降低 至預先規定的基準流量; 驅動控制機構,其使上述氣體供給機構及上述移動機 構進行驅動’一面自上述固持構件之前端喷射氣體,一 面使該固持構件朝預先配置於晶片配置位置上的半導體 晶片移動;及 登錄機構,當上述流量檢測機構檢測到自上述固持構 件之前端所噴射之氣體之流量已達到上述基準流量時, 將上述上下移動位置運算機構所計算之移動位置作為該 寺構件與上述半導體晶片接觸之高度位置而登錄到記 憶機構。 4. 一種處理機,其包括: 按麼機構,其包括受到彈性構件向上方之彈性支持之 作動體; 持構件,其連接於上述作動體之下端部並固持半導 144587.doc 201037783 體晶片; 移動機構,其使上述按壓機構上下移動; 作動體驅動機構,其將氣體供給至上述按壓機構,並 使由上述彈性構件所彈性支持4作動體在預先規定的最 上端位置與最下端位置之間相對於該按壓機構而上下移 動; 相對位置檢測機構,其檢測上述固持構件與上述按壓 機構之相對位置; 上下移動位置檢測機構,其檢測上述按壓機構之上下 移動位置;及 上下移動位置運算機冑,其根據來自i述上下移動位 置榀測機構之檢測信號來計算上述按壓機構之移動位 將上述固持構件所固持之半導體晶片配置於晶片配置 位置’或者利用該固持構件來固持晶片配置位置上所配 置的半導體晶片; 該處理機之特徵在於設置有: 氣體供給機禮,#枯诚a 射 . 機構其使乳體自上述固持構件之前端喷 流量檢測機構’其檢測由上述氣體供給機構所供給且 上逑固持構件之前端所噴射之氣體之流量是否已降低 至預先規定的基準流量; _ 述 驅動控制機構,其 氣體供給機構及上 驅動控制上述作動體驅動機構、上 述移動機構,使上述作動體配置於 144587.doc 201037783 預先規定的最上端位置與最下端位置之間,並且一面自 上述固持構件之前端噴射氣體,—面使㈣持構件朝預 先配置於晶片配置位置上的半導體晶片移動;及 ㈣機構,當上述麼力檢測機構檢測到自上述固 :之前端所喷射之氣體之流量已達到上述基準流量時, ,上述上下移動位置運算機構所計 固持構件與上述半導p m 憶機構。半導體曰曰片接觸之高度位置而登錄到記 G 〇 144587.doca grip detecting mechanism that detects whether a flow rate of a gas supplied from the gas supply mechanism and injected from a front end of the holding member has decreased to a predetermined reference flow rate; and a drive control mechanism that causes the gas supply mechanism and the movement The mechanism drives the semiconductor wafer to be ejected from the front end of the holding member while moving the holding member toward the wafer arrangement position; and the registration mechanism detects the front end of the holding member from the flow detecting mechanism When the flow rate of the injected gas has reached the above-described reference flow rate, the moving position calculated by the vertical movement position calculating means is registered as the height position of the temple member in contact with the semiconductor wafer, and is registered in the memory means. A processor comprising: a mechanism comprising: an actuator supported by an elastic member upwardly elastically; a holding member coupled to a lower end portion of the actuator and holding a semiconductor 144587.doc 201037783 body wafer; a moving mechanism that moves the pressing mechanism up and down; an actuator driving mechanism that supplies gas to the pressing mechanism and elastically supports the actuator 4 between the predetermined uppermost position and the lowermost position by the elastic member a relative position detecting mechanism that detects a relative position of the holding member and the pressing mechanism, a vertical movement position detecting mechanism that detects an upper and lower moving position of the pressing mechanism, and a vertical movement position calculator Calculating the movement position of the pressing mechanism based on the detection signal from the up-and-down moving position detecting mechanism, and arranging the semiconductor wafer held by the holding member at the wafer placement position or holding the wafer placement position by the holding member Configured semiconductor wafer; The processor is characterized in that: a gas supply machine is provided, and the mechanism is configured such that the milk body is sprayed from the front end of the holding member to detect a flow rate detecting mechanism that detects the supply of the upper holding member by the gas supply mechanism. Whether the flow rate of the gas injected at the front end has been reduced to a predetermined reference flow rate; _ the drive control mechanism, the gas supply mechanism and the upper drive control the actuator drive mechanism and the moving mechanism, and the actuator is disposed at 144587.doc 201037783 between the predetermined uppermost position and the lowermost position, and injecting gas from the front end of the holding member, the surface is configured to move the (four) holding member toward the semiconductor wafer pre-disposed on the wafer arrangement position; and (4) the mechanism, when When the force detecting means detects that the flow rate of the gas injected from the front end of the solid state has reached the reference flow rate, the holding member of the upper and lower moving position calculating means and the semi-conductive pm memory means. The position of the semiconductor cymbal contact is recorded in the record G 〇 144587.doc
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