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TW201036003A - Varistor ceramic, multilayer component comprising the varistor ceramic, and production method for the varistor ceramic - Google Patents

Varistor ceramic, multilayer component comprising the varistor ceramic, and production method for the varistor ceramic Download PDF

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Publication number
TW201036003A
TW201036003A TW099102532A TW99102532A TW201036003A TW 201036003 A TW201036003 A TW 201036003A TW 099102532 A TW099102532 A TW 099102532A TW 99102532 A TW99102532 A TW 99102532A TW 201036003 A TW201036003 A TW 201036003A
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TW
Taiwan
Prior art keywords
varistor
atomic percent
ratio
varistor ceramic
ceramic
Prior art date
Application number
TW099102532A
Other languages
English (en)
Other versions
TWI482180B (zh
Inventor
Monika Piber
Original Assignee
Epcos Ag
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Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Publication of TW201036003A publication Critical patent/TW201036003A/zh
Application granted granted Critical
Publication of TWI482180B publication Critical patent/TWI482180B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006—Thick film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
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    • H01—ELECTRIC ELEMENTS
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    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3241—Chromium oxides, chromates, or oxide-forming salts thereof
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    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
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  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

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201036003 六、發明說明： 【發明所屬之技術領域】 本發明係關於根據本發明申請專利範圍第1項所述之 變阻器陶瓷。 【先前技術】 變阻器陶瓷之普遍問題係造成低介電常數（er)。同 牯’變阻盗陶瓷應該達到高度非線性(n〇nlinearity)、於高 ❹電流範圍（靜電放電（ESD),8/20)内具有足夠高的切換能力 (switching capacity)、以及低漏電流（i〇w ieakage current)。 【發明内容】 猎由根據本發明申請專利範圍第1項所述之變阻器陶 瓷係達到上述目的。本發明進一步申請專利範圍之目的係 該變阻器陶瓷之進一步實施例，而且包括該變阻器陶瓷的 多層元件及該變阻器陶瓷之製造方法。 變阻斋係電壓相依電阻器（v〇ltage-dependent 〇 resistor)，且係使用於過電壓保護（overv〇ltagepr〇tecti〇n)。 本發明之實施例係關於一種變阻器陶瓷’係包括下列， 材料：鋅(Zn) ’係作為主要成分；镨(ρΓ)，係占〇」至3原 子百分比（atom%)之比例；以及選自釔(γ)、鈥(Η〇)、铒(εγ)、 鏡(Yb)及錙(Lu)之金屬Μ，係占o.i至5原子百分比之比 例。 於一個實施例中，Μ代表釔或镏。 於一個實施例中，鈷（Co)之比例係於o.i至1〇原子百 分比範圍内，其中鈷較佳以Co2+之形式存在。 94823 3 201036003 於一個實施例中，鈣（Ca)之比例係於〇 〇〇1至5原子 百分比範圍内，其中鈣較佳以Ca2+之形式存在。 於一個實施例中，矽（Si)之比例係於〇〇〇1至〇5原子 百分比範圍内，其中矽較佳以Si4+之形式存在。 於一個實施例中，鈒(A1)之比例係於〇 〇〇1至〇 〇1原 子百分比範圍内’其中鋁較佳以Al3+之形式存在。 於一個實施例中，鉻(Cr)之比例係於〇 〇〇1至5原子 百分比範圍内，其中鉻較佳以Cr3+之形式存在。 於一個實施例中，硼（B)之比例係於〇 〇〇1至5原子百 分比範圍内，其中硼較佳以B3+之形式存在。 對於高傳輸速率之數位信號而言，需要有具有高靜電 放電強度(ESD robustness)和突波電流穩定度（surge current stability)和低電容值之多層變阻器。為了使得對於欲傳輸 佗號之影響儘量越小越好’故必須要有低電容值。 變阻器之電容值係由下列方程式所表示： C= ε 〇 ε rA/d, (1) 其中，C係該電容值，ε 〇係真空介電係數(permittivity of vacuum) ’ ε r 係相對介電係數(relative permittivity)，A 係兩個電極之間的面積，而d係該等電極之間的層厚度。 根據 Levinson 等於 J. Appl. Phys. Vol.46 ; No.3 ; 1975 所揭路者’該間粒狀材料（intergranular material)之真正介 電常數ε eff係由下列方程式所描述： C== £ eff ε 〇[A/(zxd)], (2) 其中，C係該電容值，ε 〇係真空介電係數，z係兩個 4 94823 201036003 電極之間顆粒至顆粒接觸（grain_t〇_grain c〇ntact)數，A係 該等電極之間的面積，而d係顆粒至顆粒接觸之阻障層 (barrier layer)之厚度。 習知技術用以降低多層變阻器之電容值（方程式 之方法係縮減面積A並且增加該層厚度d。然而，因為縮 減該面積A會導致最大能量吸收能力（energy abs〇rpti〇n capacity)降低，並且因此降低突波電流穩定度和靜電放電 ❹脈衝之強度，故此㈣知技術係與多層概念相反。 在―個實施例中’該變㈣陶纽包括氧化銘(c〇balt ⑽他)和氧化镨(praseodymium oxide)、鹽類的添加物或者 低鹽基度(basicity)之金屬Μ的氧化物（小離子半徑），如Y3+ 或者 Lu3+(rk3+=93pm)。 因此達到較低的阻障極化度（polarizability)和阻障性 質（阻障尚度和該空乏層（depletion layer)之寬度）的控制， 並且仔到具有降低的每個顆粒至顆粒接觸之電容值之變阻 〇器陶竟，同時該變阻器陶竟還具有高度非線性和靜電放電 穩定度。 藉由降低每個顆粒至顆粒接觸之電容值，能夠得到於 該等電極之間相同面積具有較低電容值之變阻器元件，並 ^因此侍到相同良好的靜電放電強度以瓦:突此I流穩定 度。 所列不之優點係於示範實施例中詳細描述。 ；固實施例中’氧化物或鹽類或者該金屬Μ(其陽 離子具有相對較小的離子半徑(例如：γ3+、Lu3+))係溶解於 94823 201036003 該變阻器陶瓷中，使得該變阻器陶瓷之每個顆粒至顆粒接 觸具有較低之電容值。 於一個示範實施例中，镨（0J至3原子百分比）和鈷 (0.1至10原子百分比）的氧化物作為摻雜物（d〇pant)添加至 氧化鋅（ZnO)，而此外鈣（0·001至5原子百分比、矽（〇 〇〇1 至0.5原子百分比）、鋁（0.001至〇 〇1原子百分比）、鉻（〇 〇〇1 至5原子百分比）係以氧化物形式和硼(b〇r〇n)係以鍵結形 式（0.001至5原子百分比）用於控制該燒結製程中微結構 (microstmctoe)之形成、以及釔（yttrium)#以氧化物形式 (〇·1至5原子百分比）添加至該氧化辞。 【實施方式】 第1圖係顯示多層變阻器之製造製程之流程示意圖， 包括下列製程步驟：A1初始重量（initial weight)、Α2預先 研磨（pre-grinding)、A3 烘乾(drying)、A4 蒒選(screening)、 A5 鍛燒(calcination)、A6 後研磨（post-grinding)、A7 烘乾、 A8 篩選、B1 漿化(slurrying)、B2 綠箔（green foil)、Cl 利 用導電聚糊進行印刷（printing with conductive paste)、C2 堆疊（stacking)、C3 切割（cutting)、D1 脫碳(decarburizing)、 D2 燒結（sintering)、El 附接外部端點（attaching external terminal)、E2 預燒（burning-in)。 第2圖係示意地顯示多層變阻器之結構，其包括内部 電極（1)、變阻器陶瓷材料(2)以及該等外部端點（3)。 於一個實施例中，該多層變阻器之陶瓷本體係以單體 陶竟本體(monolithic ceramic body)之形式存在。 6 94823 201036003 第3圖於左側顯示靜電放電脈衝(ESD pulse)之特性曲 線’而於右側顯示8/20脈衝之特性曲線。 該多層變阻器可根據第1圖進行製造。 表1中指出該等成分以氧化物、溶解或鍵結形式之初 始重量比例（A1)、預先研磨（A2)、烘乾(A3)、障選(A4)， 並且接著於400¾至i〇〇(TC間進行鍛燒（A5)、後研磨 (A6)、喷乾(A7)及篩選(A8) 〇 〇 自藉由添加黏結劑（binder)、擴散劑（dispersing agent)、及溶劑(solvent)的方式所製造之粉末製造的漿體 (slurry)(Bl>’自該漿體汲取具有層厚度5至60微米（/zm) 間之箱（B2)，接著以類似第1圖所示製程流程圖之方式處 理該箱’以獲得多層變阻器。該綠箔係利用導電漿糊進行 印刷(ci)、堆疊’並接著切割(C2，C3)。 該黏結劑於接下來的脫碳步驟中於18(TC至500°C間 之溫度失去其綠色部份(green part)(Di)，且該等元件係於 〇 9〇〇c至140(TC間之溫度進行燒結（D2)。接著施加該外部 端點層（E1)，且該外部端點層係於5〇〇七ΆΤΗΚΤΟ間之溫度: 進行預燒(E2)〇 . 於較佳變化例中，製程步驟(D2)中之燒結溫度係介於 llOOt：至 1400X：間。 ㈣: 於另一較佳變化例中，製程步驟(E2)中用於進行預燒 之溫度係介於600¾至100(TC間。 苐2圖係顯示多層元件之侧面示意圖。於此，該等内 4電極（1)和變阻器陶瓷材料層（2)係交替排列。於每一個情 7 94823 201036003 況中，該等内部電極（1)均係交替連接至該等外部端點（3) 之一者或其他者。在中央區域中，該等内部電極（1)係重疊。 0402多層變阻器（尺寸i.〇mmx0.5mmx0.5mni)之習知 結構係顯示於第2圖中，其中，該等内部電極之重疊面積 (2)和數量可適用於所期望之電性元件特性。 該等元件之電性特性係藉由於1安培（Uk)下之漏電 流、變阻益電壓、非線性係數（coefficient of nonlinearity)、 8/20脈衝穩定度、靜電放電（BSD)脈衝穩定度、該8/20端 點電壓而決定。 第3圖於左侧和右側分別顯示每一種情況中之脈衝曲 線。針對時間t繪製出每一種情況中的電流工。 特定變阻器電壓Ev係於1毫安培(mA)下決定。 該電容值係於1伏特和IKHz下測量到。 該靜電放電穩定度係由第3圖中左側之脈衝所決定。 為此目的，該等元件係受制於+/_1〇靜電放電脈衝(如第3 圖右側所示）。計算出脈衝前和脈衝後於Uv上之百分比變 化(percentage change) ’以及計算出脈衝前和脈衝後該漏電 流之百分比，且所顯示之百分比變化—定不會大於腦。 除此之外，實施8/20強度測試(如第3圖右侧所示，呈現 脈衝形狀）。該等元件係於丨安培、5安培、⑺安培、Μ 安培、20安培及25安培下受制於8/2。脈衝(如第3圖右側 it:決定加入負載之後該變阻器電愿和該漏電流之 百分比變化。 該等非線性係數係利用下列式子決定·· 94823 8 201036003 a i(l〇//A/lmA)=log(lxl〇-3/10xlO'6)/l〇g(Vi〇niA/Vi〇^A) '"1 a2(lmA/lA)=l〇g(l/l〇xl〇-3)/l〇g(v1A/vlmA) a 3(lmA/20A)=l〇g(2〇/lxl〇-3)/l〇g(V20A/VlmA) 於125°C ’以80%平均實施穩定度測試。該漏電流iL 於該等條件下應該不具有上升特性(rising characteristic)。 表1初始重量：（單位係原子百分比（atom%)) A B C D 鋅 97.9 97.4 96.9 96.4 鈷 1.5 1.5 1.5 . 1.5 镨 0.5 0.5 0.5 0.5 鉻 0.1 0.1 0.1 0.1 0.02 0.02 0.02 0.02 矽 0.02 0.02 0.02 0.02 釔 0 0.5 1 1.5 硼 0.01 0.01 0.01 0.01 60ppm 60ppm 60ppm 60ppm 〇 〇 表2 電性結果
材料 Ev [伏特 /毫米] £ r £ J Εγ a 1 a 2 a 3 8/20 穩定度 靜電放電 穩妓 A 268 2200 8.2 11 8 7 >20安培 >30KV B 269 1737 7.9 18 10 8 >20安培 >30KV C 336 1316 3.7 17 11 9 >20安培 >30KV D 525 677 1.3 29 14 11 >20安培 >30KV 9 94823 201036003 表2概括了該等電性資料。藉由添加釔，該特定變阻 器電壓自268伏特/毫米增加至525伏特/毫米，同時降低 相對介電係數。此類變化可歸因於釔化合物之顆粒生長-抑制性質（grain growth-inhibiting property)。 為了得到獨立於顆粒尺寸之參數，建立有比例ε r/ Ev。表2係顯示該比例隨著所添加釔之增加而減少。同時， 利用同樣良好之非線性，達到高靜電放電和8/20穩定度。 於一個實施例中，鋅之也例較佳大於90原子百分比， 其中，鋅較佳以Ζη2+之形式存在。 於一個實施例中，镨之比例較佳介於0·5至0.6原子 百分比範圍内，其中，镨較佳以Pr3+/4+之形式存在。 於一個實施例中，Μ之比例較佳介於1至5原子百分 比範圍内，其中，Μ較佳以Μ2+/Μ3+/Μ4+之形式存在。 於一個實施例令，鈷之比例較佳介於1.5至2.0原子 百分比範圍内，其中，鈷較佳以Co2+之形式存在。 於一個實施例中，鈣之比例較佳介於0.01至0.03原 子百分比範圍内，其中，鈣較佳以Ca2+之形式存在。 於一個實施例中，矽之比例較佳介於0.01至0.15原 子百分比範圍内，其中，矽較佳以Si4+之形式存在。 於一個實施例中，銘之比例較佳介於0.005至0.01原 子百分比範圍内，其中，鋁較佳以Al3+之形式存在。 於一個實施例中，鉻之比例較佳介於0.05至0.2原子 百分比範圍内，其中，鉻較佳以Cr3+之形式存在。 於一個實施例中，硼之比例較佳介於0.001至0.01原 10 94823 201036003 子百分比範圍内，其中，硼較佳以B3+之形式存在。 於一個實施例中，該相對介電係數ε r係小於1〇〇〇。 由於避免驗金屬碳酸鹽添加物（alkali metal carbonate additive)，利用技術製程控制能夠達到高再生率 (reproducibility)。 〇 於製造製程中’於高溫範圍中能夠自適當的前驅物 (precursor)中釋放出氧化硼（boric oxide)作為燒結輔助 (sintering aid)，用於控制微結構發展，同時避免大範圍的 蒸發損失（evaporation loss)。 類型0402和類型0201之多層變阻器係藉由優異的結 果(針對漏電流、靜電放電穩定度、8/20強度、長期穩定度 與非線性）進行區別。 主要成分係理解為意指比例至少5 0原子百分比。辞 之比例較佳大於70原子百分比，其中」鋅較佳以Zn2+之 形式存在。 〇 於該變阻器陶瓷之製造方法的一個變化例中，該製造 方法包括下列製程步驟： (a) 鍛燒未力σ工的陶瓷材料(raw ceramic material); (b) 製造漿體； (c) 製備綠箔； (d) 脫脂（debinding)該綠箔；以及 (e) 燒結來自步驟(d)之該綠箔。 於該製造方法之進一步變化例中，該方法於製程步驟 (d)和e)之間復包括製程步驟(dl)建構元件。 11 94823 201036003 參考列表 (1) 内部電極 (2) 變阻器陶瓷材料 (3) 外部端點 【圖式簡單說明】 第1圖係顯示多層變阻器之製造製程之流程示意圖； 第2圖係示意地顯示多層變阻器之結構；以及 第3圖於左側顯示靜電放電脈衝之特性曲線，而於右 側顯示8/20脈衝之特性曲線。 【主要元件符號說明】 1 内部電極 2 變阻器陶瓷材料 3 外部端點 A1 初始重量 A2 預先研磨 A3 烘乾 A4 篩選 A5 鍛燒 A6 後研磨 A7 烘乾 A8 篩選 B1 漿化 B2 綠箔 C1 利用導電漿糊進行印刷 C2 堆疊 C3 切割％ D1 脫碳 D2 燒結 E1 附接外部端點 E2 預燒 I 電流 t 時間 12 94823

Claims (1)

  1. 201036003 七、申請專利範圍： 1· 一種變阻器陶瓷，包括下列材料： 鋅，係作為主要成分； 錯’係占0.1至3原子百分比之比例；以及 選自釔、鈥、铒、镱及镏之金屬M，係占〇1至5 原子百分比之比例。 2. 如申請專利範圍第！項之變阻器陶曼，其中，％代表紀 或錦。 ❸ 3. 如申請專利範圍第項之變阻器陶究，復包括·· 鈷，係占0.1至10原子百分比之比例。 4. 如申請專利範圍第⑴項中任一項之變阻器陶瓷，復 包括： 辦’係占0.001至5原子百分比之比例。 5. 如中請專利範圍第項中任—項之變阻器陶竟，復 包括： 〇 矽，係占0.001至0.5原子百分比之比例。 如申睛專利範圍第1至5項中任一項之變阻器陶瓷，復 包括： 鋁’係占0.001至0.01原子百分比之比例。 凊專利範圍第1至6項中任一項之變阻器陶瓷，復 包括： 8 路’係占0.001至5原子百分比之比例。 如申4專利範圍第1至7項中任一項之變阻器陶瓷，復 包括： 94823 13 201036003 蝴’係占0.001至5原子百分比之比例。 9.如申請專利範圍第！至8項中任一項之變阻器陶竞，包 括： 鋅，係作為主要成分； 镨’係占0.1至3原子百分比之比例； Μ ’係占〇· 1至5原子百分比之比例； 始，係占0.1至10原子百分比之比例； 約’係占0.001至5原子百分比之比例； 矽，係占0.001至0.5原子百分比之比例； 鋁，係占0.001至〇.〇1原子百分比之比例； 鉻’係占0.001至5原子百分比之比例； 硼，係占0.001至5原子百分比之比例。 ’如申明專利砣圍第1至9項中任一項之變阻器陶瓷，係 具有低於2000之相對介電係數£ r。 丨1·如申睛專利範圍第丨至1Q項中任―項之變阻器陶究， 其中，係藉由添加Μ而降低該變阻器材料之相對介電 係數。 u·如申請專利範圍第1至11項中任一項之變阻器陶瓷， 係具有介於1000和130(rc之間的燒結溫度。 13.如申請專利範圍第i至12項中任—項之變阻器陶究， 係不具有鹼金屬。 14·—種多層元件’包括如申請專利範圍第1至13項中任 —項之變阻器陶究，係具有用於靜電放電保護之組構。 15.-種用於製造如申請專利範圍第i至13項中任一項之 94823 14 201036003 變阻器陶瓷之方法，包括下列製程步驟： (a) 鍛燒未加工的陶瓷材料； (b) 製造漿體； (c) 製備綠箔； (d) 脫脂該綠箔；以及 (e) 燒結來自步驟(d)之該綠箔。 〇 〇 15 94823
TW099102532A 2009-02-03 2010-01-29 變阻器陶瓷、包括變阻器陶瓷之多層元件及變阻器陶瓷之製造方法 TWI482180B (zh)

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