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TW201034969A - Method for manufacturing a powder for the production of p-type transparent conductive films - Google Patents

Method for manufacturing a powder for the production of p-type transparent conductive films Download PDF

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TW201034969A
TW201034969A TW098141519A TW98141519A TW201034969A TW 201034969 A TW201034969 A TW 201034969A TW 098141519 A TW098141519 A TW 098141519A TW 98141519 A TW98141519 A TW 98141519A TW 201034969 A TW201034969 A TW 201034969A
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target
oxide material
powder
homogeneous mixture
temperature
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TW098141519A
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Guido Huyberechts
Griet Drees
Daan Goedeme
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Umicore Nv
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract

This invention relates to material compositions, a manufacturing method for these materials and a manufacturing method for ceramic bodies, to be used as targets in physical vapour deposition techniques of p-type transparent conductive films. There is disclosed a method for manufacturing a pelletized oxide material MxSr1-xCu2+aO2+b, wherein -0.2 ≤ a ≤ 0.2, -0.2 ≤ b ≤ 0.2, and M is either one or more of the group of bivalent elements consisting of Ba, Ra, Mg, Be, Mn, Zn, Pb, Fe, Cu, Co, Ni, Sn, Pd, Cd, Hg, Ca, Ti, V, Cr; with 0 ≤ x ≤ 0.2; comprising the steps of: providing a precursor mixture having a given grain size distribution, and comprising stoichiometric quantities of Cu2O, Sr(OH)2.8H2O, and, when 0 < x ≤ 0.2, M-hydroxide, intimately mixing said precursor mixture so as to obtain a homogeneous mixture, and sintering said homogeneous mixture at a temperature above 850 DEG C. The oxide material SrCu2+aO2+b has a residual carbon content of less than 400 ppm, and a target having a density of at least 5.30 g/ml can be manufactured with it.

Description

201034969 六、發明說明: 【發明所屬之技術領域】 本發明有關材料組成物、該等材料之製法, P型透明導電膜之物理氣相沉積技術中的靶材之 製法。 【先前技術】 近幾十年間,透明導電氧化物的發展方面已有 步。IΤ 〇 (氧化銦錫)具有迄今所得之最低電阻保 型透明導電氧化物,且結合〜1 (Γ4 Qcm之電阻係數 見光-NIR光譜範圍之至高達80-90%的透明度。E 雜鋁之氧化鋅(Ζ η O : A1 ),且其在許多應用中係作 之替代品,但其性能仍略遜於IΤ Ο之性能(電阻译 &gt;1(T4 Qcm)。然而’顯示此量級之所有透明導電 全爲η型導電氧化物。 因此,雖然彼等具有優良特徵,但其應用僅 要透明導電電極的應用,諸如發光裝置、平板顯 伏打裝置、智慧型窗戶(smart window )等。爲 造新穎類型之電光裝置,亦需要p型透明導電氧 品質P型透明導電氧化物的可取得可容許藉由形 面及容許製造透明電晶體而將該等材料與現存n 合成透明主動裝置。此使得能形成發射UV光二 與磷光體、透明電子電路、感測器…結合可形成 顯不器類型)。過去已有許多硏究人員與發明家 待作爲 瓷體的 長足進 數的η 與在可 提出慘 爲 ΙΤΟ 數 氧化物 限於需 器、光 能夠建 物。高 ρ-η接 材料結 體(若 如新穎 察到此 -5- 201034969 ,並已針對發展透明導電P型材料進行大量硏究。 然而’至今已識別之P型透明導電氧化物的電阻係數 比η型對應物高至少一個量級,且通常需要高溫以供形成 薄膜。實例可參考Η· Kawazoe等人之P -1 y p e e 1 e c t r i c a 1 conduction in transparent thin films of CuA102, Nature, 3 89, 939-942 ( 1 9 9 7 );及 H . M i z o gu c h i 等人之 Ap p 1 ·201034969 VI. Description of the Invention: [Technical Field] The present invention relates to a material composition, a method for producing the same, and a method for producing a target in a physical vapor deposition technique of a P-type transparent conductive film. [Prior Art] In recent decades, the development of transparent conductive oxides has been in progress. IΤ(Indium Tin Oxide) has the lowest resistance-preserved transparent conductive oxide obtained so far, and combines ~1 (the resistivity of Γ4 Qcm sees the light-NIR spectral range up to 80-90% transparency. E-aluminum Zinc oxide (Ζ η O : A1 ), and it is a substitute for many applications, but its performance is still slightly inferior to the performance of I Τ 电阻 (resistance translation > 1 (T4 Qcm). However, 'show this magnitude All of the transparent conductive materials are all n-type conductive oxides. Therefore, although they have excellent characteristics, their applications only require the application of transparent conductive electrodes, such as illuminating devices, flat volts devices, smart windows, etc. In order to create a novel type of electro-optic device, a p-type transparent conductive oxygen quality P-type transparent conductive oxide is also required to be obtained by allowing the transparent surface of the material and the existing n-synthesis transparent active device. This enables the formation of UV light to be combined with phosphors, transparent electronic circuits, sensors, etc. to form the type of display. In the past, many researchers and inventors have been waiting for the length of the porcelain. η 和 在 在 在 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物 氧化物However, the resistivity of the P-type transparent conductive oxide that has been identified so far is at least one order of magnitude higher than that of the n-type counterpart, and usually requires a high temperature for forming a thin film. For an example, refer to P·Kawazoe et al. Ypee 1 ectrica 1 conduction in transparent thin films of CuA102, Nature, 3 89, 939-942 (1 9 9 7 ); and H. M izo gu chi et al.

Phys. Lett., 80, 1 207- 1209 ( 2 0 0 2 ) 、H. 0 h t a 等人之Phys. Lett., 80, 1 207- 1209 ( 2 0 0 2 ), H. 0 h t a, etc.

Solid-State Electronics, 47, 226 1 -2267 ( 2003 ) &gt; 此二 文獻係探討AM〇2構造材料,其中a係陽離子而M係正 離子’例如CuA102。雖然迄今已知之該等p型透明導電 氧化物的性能仍不佳’但已有提出許多有關形成透明p-n 接面之硏究,I者如 K. Tonooka等人於Thin Solid Filins, 445,3 27, ( 2003 )中提出之以p-n同質接面(CuIn〇2 ) 爲基礎的透明二極體;及H. Hosono等人於Vacuum,66, 419 (2 002 )中提出之使用p_n異質接面之光電裝置(p_Solid-State Electronics, 47, 226 1 - 2267 (2003) &gt; These two documents explore AM〇2 construction materials in which a is a cation and M is a positive ion such as CuA102. Although the performance of such p-type transparent conductive oxides known to date is still poor, a number of studies have been proposed for forming transparent pn junctions, such as K. Tonooka et al., Thin Solid Filins, 445, 3 27 , (2003) proposed a transparent diode based on pn homojunction (CuIn〇2); and H. Hosono et al., Vacuum, 66, 419 (2 002), using p_n heterojunction Photoelectric device (p_

SrCu2〇2/n-ZnO )。其他材料爲 p-ZnRh204/n-Zn0 UV-LED 、p-NiO/n-ZnO UV偵檢器、以由透明氧化物半導體所組 成之p-η異質接面二極體爲基礎的UV-偵檢器,諸如p-Ni〇/n-ZnO ’及P-CuA102/n-Zn0光伏打電池與透明電子元 件。 然而’由於材料品質不佳、非最佳電阻係數與P型透 明導電氧化物之載子濃度或異質接面之界面不分明而致使 該等二極體性能不佳,因此使得理想係數(ideality factor )不小於1 · 5,V &lt; 4V之順向電流對反向電流比係介於1 0 -6- 201034969 與8 0之間’擊穿電壓小於8伏’串聯電阻提高,且接通 電壓不一定對應於該等材料之能帶隙。該等裝置之透明度 介於4 0 %與8 0 %之間。SrCu2〇2/n-ZnO). Other materials are p-ZnRh204/n-Zn0 UV-LED, p-NiO/n-ZnO UV detector, UV-detection based on p-η heterojunction diode composed of transparent oxide semiconductor Detectors, such as p-Ni〇/n-ZnO' and P-CuA102/n-Zn0 photovoltaic cells and transparent electronic components. However, because the material quality is not good, the non-optimal resistivity and the carrier concentration of the P-type transparent conductive oxide or the interface of the heterojunction are not clear, the performance of the diodes is not good, thus making the ideality factor ) not less than 1 · 5, V &lt; 4V forward current versus reverse current ratio between 1 0 -6- 201034969 and 80 'breakdown voltage less than 8 volts' series resistance increased, and turn-on voltage Does not necessarily correspond to the energy band gap of the materials. The transparency of these devices is between 40% and 80%.

Kawazoe與Hosono之小組的硏究成果(例如Η. Yanagi 等人之 J. Electroceram., 4, 407 ( 2000 ))已弓j 起形成許多以載有Cu(I)之氧化物的許多p型透明導電 氧化物的說明。藉由異質磊晶薄膜生長(如H. Ohta等人 之 Electron. Lett.,36,984 ( 2000)中)中所提出)成功 〇 地製造以p-SrCu2〇2與n-ZnO所組成之p-n異質接面爲基 礎的發射UV二極體。在該等p-TCO材料當中,SrCu2〇2 (亦稱爲SCO)係用於電子裝置中之最有潛力材料,此主 要是因爲可在相對較低溫度下獲得磊晶膜以避免接面區之 界面反應。雖然已提出未摻雜與摻雜K之SrCu202薄膜的 合成(例如,於US 6,294,274 B1中提出),但尙未完全 暸解摻雜劑對於SrCu202之光電子性質的影響,且目前爲 Q 止SrCu202膜之導電性仍小於其他p型TCO之導電性。 前文提及的許多報告係有關從溶液沉積薄膜。其他沉 積薄膜的常見技術係由物理氣相沉積之通稱所涵蓋,其包 括但不侷限於二極體與磁控管濺鍍、反應性濺鍍、真空蒸 發、脈衝雷射沉積(PLD )、雷射融蝕蒸鍍(laser ablation ) 、IAD等。該等技術主要使用固態陶瓷或金屬 體,即所謂靶材。本技術中已知此等技術中所使用之陶瓷 體或靶材較佳係具有高密度(低孔隙度)與均勻性’且較 佳係不存在多種化合物與相以避免在沉積或製造期間該形 201034969 成之薄膜產生優先灘鑛(preferential sputtering)以及濃 度與組成不均勻性。The results of the research by Kawazoe and Hosono's group (eg, Yan. et al., J. Electroceram., 4, 407 (2000)) have formed many p-type transparents containing oxides of Cu(I). Description of conductive oxides. The pn consisting of p-SrCu2〇2 and n-ZnO is successfully fabricated by heteroepitaxial thin film growth (as proposed in H. Ohta et al., Electron. Lett., 36, 984 (2000)). A heterojunction-based emitting UV diode. Among these p-TCO materials, SrCu2〇2 (also known as SCO) is the most promising material for electronic devices, mainly because the epitaxial film can be obtained at relatively low temperatures to avoid junction regions. The interface reaction. Although the synthesis of an undoped and K-doped SrCu202 film has been proposed (for example, as proposed in US 6,294,274 B1), the effect of the dopant on the photoelectron properties of SrCu202 is not fully understood, and is currently a Q-stop SrCu202 film. The conductivity is still less than the conductivity of other p-type TCOs. Many of the reports mentioned above relate to depositing films from solution. Other common techniques for depositing thin films are covered by the general term for physical vapor deposition, including but not limited to diode and magnetron sputtering, reactive sputtering, vacuum evaporation, pulsed laser deposition (PLD), and thunder. Laser ablation, IAD, etc. These technologies mainly use solid ceramics or metals, so-called targets. It is known in the art that ceramic bodies or targets used in such techniques preferably have high density (low porosity) and uniformity 'and preferably do not have multiple compounds and phases to avoid during deposition or manufacturing. Shape 201034969 The film produced preferential preferential plating and concentration and composition non-uniformity.

Sheng 等人於&quot;Oriented growth of p-type transparent conducting Ca-doped S r C u 2 0 2 thin films by pulsed laser deposition&quot;, Semicond. Sci. Technol., 21, 5 8 6-5 90 ( 2006 )中提出有關經摻雜SCO膜之脈衝雷射沉積。該PLD靶 材係從多晶摻雜Ca之SrCu202粉末而製得,該粉末係藉 由加熱Cu20、SrC03與CaC03之混合物而合成。首先, 取原子比爲 10:9:1 之 Cu20 ( 99.9%) 、SrC03 ( 99.9%) 與CaC03 ( 99.99% )的純粉末,並在一球磨機中徹底混合 24小時。然後,該混合物係在氬氣氛中於900°C下加熱1 5 小時。再硏磨該經燒結體並壓成小九,在氬氣氛中於 9 0 0 °C下燒結該小九1 0小時,其係用作P LD靶材。此方法 大致說明製造P LD靶材的最新技術。在U S 7 0 8 7 5 2 6 B 1中 ,揭示藉由旋轉塗布醋酸鹽前驅體混合物製造p型摻雜 Ca◦之SrCu2〇2薄膜之方法。 迄今’使用物理氣相沉積技術製造透明導電膜已顯示 出許多與所使用陶瓷體材料的性質有關之技術性問題。現 今之市售材料不夠緻密,且亦不均勻。該等問題與靶材形 成時使用過高溫度以及靶材中存在殘留碳污染有關聯。該 等問題將在下文對照實例中舉例說明。 【發明內容】Sheng et al., &quot;Oriented growth of p-type transparent conducting Ca-doped S r C u 2 0 2 thin films by pulsed laser deposition&quot;, Semicond. Sci. Technol., 21, 5 8 6-5 90 ( 2006 ) Pulsed laser deposition on a doped SCO film is proposed. The PLD target was prepared from a polycrystalline doped Ca SrCu202 powder which was synthesized by heating a mixture of Cu20, SrC03 and CaC03. First, a pure powder of Cu20 (99.9%), SrC03 (99.9%) and CaC03 (99.99%) having an atomic ratio of 10:9:1 was taken and thoroughly mixed in a ball mill for 24 hours. Then, the mixture was heated at 900 ° C for 15 hours in an argon atmosphere. The sintered body was further honed and pressed into a small nine, and the small 90-hour was sintered at 900 ° C in an argon atmosphere, which was used as a P LD target. This method outlines the latest technology for manufacturing P LD targets. In U S 7 0 8 7 5 2 6 B 1 , a method of producing a p-type doped Ca ◦ SrCu 2 〇 2 film by spin coating an acetate precursor mixture is disclosed. The manufacture of transparent conductive films using physical vapor deposition techniques to date has revealed many technical problems associated with the properties of the ceramic body materials used. The materials available today are not dense enough and are not uniform. These problems are associated with the use of excessive temperatures in the formation of the target and the presence of residual carbon contamination in the target. These issues will be exemplified in the comparative examples below. [Summary of the Invention]

本發明目的在於說明一種用於製造含緦、銅與氧之P -8- 201034969 型透明導電氧化物的經改良方法’以及製造不具前述問題 的供物理氣相沉積用之靶體。 根據本發明,一種經製九之氧化物材料 MxSri.xCvi2 + a〇2+b (其中 _〇.2$aS〇.2,-0.2sbf0.2,且 Μ 係 由 Ba、Ra ' Mg、Be、Mn、Zn、Pb、Fe、Cu、Co .、Ni、 Sn、Pd、Cd、Hg、Ca、Ti、V、Cr所組成之二價元素之群 組中的一或多者;其中O^x SO ·2 )的製法包括以下步驟: -提供具有給定顆粒大小分布的前驅體混合物,且包 〇 含化學計量數量之Cu20、Sr(OH) 2.8Η20,且當0&lt;XS0.2 時包含Μ-氫氧化物, -緊密混合該前驅體混合物以便製得均勻混合物,及 •在高於8 5 0 °C之溫度下燒結該均勻混合物。 在緊密混合該前驅體混合物之步驟期間,較佳係保留 該顆粒大小分布,且在緊密混合該前驅體混合物與燒結該 均勻混合物的步驟之間,該均勻混合物較佳應經歷在6(TC Q 與1 〇〇°c之間的溫度下之煅燒步驟。該緊密混合步驟較佳 係在Turbula混合器中進行,而該煅燒步驟較佳係在真空 乾燥步驟中進行。 在一具體實例中,上述方法另外包括藉由在高於 950°C之溫度及爲至少2.5 kN/cm2,較佳爲至少3.5 kN/cm2 之壓力下對該經製九之氧化物材料進行熱壓實循環。該熱 壓實循環較佳係在975與1〇25 t之間的溫度下進行。 在一較佳具體實例中,x = l±〇.2, M^=Ba,且M -氫氧化 物係 B a ( Ο Η ) 2 · 8 Η 2 Ο。 -9- 201034969 本發明亦涵括粉末狀氧化物材料SrCU2+a〇2+b,其中 -0.29S0.2 ’ -0.251^0.2 ’ 殘留碳含量少於 400 ppm。該粉 末狀氧化物材料係用於製造靶材,其中該等肥材之密度爲 至少5 · 3 0 g/ml,且可由包括以下步驟之方法製得: -在高於8 5 0 °C之溫度下燒結所述均勻混合物,由此 製得經製九之氧化物材料,及 -在高於95〇°C之溫度及爲至少2.5 kN/cm2,較佳爲 至少3 . 5 kN/cm2之壓力下對該經製丸之氧化物材料進行熱 壓實循環。 較佳係該靶材之密度爲至少5.40,或甚至爲5.45 g/ml。在一較佳具體實例中,該靶材係用於p型透明導電 膜之PVD沉積,諸如磁控管濺鍍。 本發明將顯示該製法的溫度與時間比先前技術降低及 減少,且意外地亦觀察到從使用該經改良方法所製造之粉 末的粉末純度與從該粉末所得之陶瓷體的均句度顯著改善 【實施方式】 本發明係藉由下列(反)實施例做進一步說明。 反例1 :最新技術產物(CE1 ) 藉由脈衝雷射沉積(PLD )製造之氧化緦銅(SCO ) 薄膜可從 STMC (美國俄亥俄州 Westerville 之SUMMARY OF THE INVENTION An object of the present invention is to provide an improved method for producing a transparent conductive oxide of P-8-201034969 type containing bismuth, copper and oxygen, and a target for physical vapor deposition which does not have the aforementioned problems. According to the present invention, a niobium oxide material MxSri.xCvi2 + a〇2+b (where _〇.2$aS〇.2, -0.2sbf0.2, and Μ is made of Ba, Ra 'Mg, Be One or more of a group of divalent elements composed of Mn, Zn, Pb, Fe, Cu, Co., Ni, Sn, Pd, Cd, Hg, Ca, Ti, V, Cr; The process of x SO · 2 ) comprises the steps of: - providing a precursor mixture having a given particle size distribution, and comprising a stoichiometric amount of Cu20, Sr(OH) 2.8 Η 20, and when 0 &lt; XS 0.2 Μ-Hydroxide, - intimately mixing the precursor mixture to produce a homogeneous mixture, and • sintering the homogeneous mixture at a temperature above 850 °C. Preferably, during the step of intimately mixing the precursor mixture, the particle size distribution is retained, and between the step of intimately mixing the precursor mixture and sintering the homogeneous mixture, the homogeneous mixture preferably undergoes 6 (TC Q) The calcination step at a temperature between 1 〇〇 ° C. The intimate mixing step is preferably carried out in a Turbula mixer, and the calcination step is preferably carried out in a vacuum drying step. In a specific example, The method additionally comprises subjecting the niobium oxide material to a hot compaction cycle at a temperature above 950 ° C and at a pressure of at least 2.5 kN/cm 2 , preferably at least 3.5 kN/cm 2 . The solid cycle is preferably carried out at a temperature between 975 and 1 〇 25 t. In a preferred embodiment, x = l ± 〇.2, M^ = Ba, and the M-hydroxide system B a ( Ο Η ) 2 · 8 Η 2 Ο -9- 201034969 The invention also includes a powdered oxide material SrCU2+a〇2+b, wherein -0.29S0.2 ' -0.251^0.2 ' residual carbon content is less than 400 Ppm. The powdered oxide material is used to make a target, wherein the density of the fertilizer is 5% less than 30 g/ml, and may be obtained by a process comprising the steps of: - sintering the homogeneous mixture at a temperature above 850 ° C, thereby producing a niobium oxide material, and - subjecting the pelletized oxide material to a hot compaction cycle at a temperature above 95 ° C and at a pressure of at least 2.5 kN/cm 2 , preferably at least 3.5 kN/cm 2 . The density of the target is at least 5.40, or even 5.45 g/ml. In a preferred embodiment, the target is for PVD deposition of a p-type transparent conductive film, such as magnetron sputtering. The present invention will show The temperature and time of the process are lower and lower than those of the prior art, and it is unexpectedly observed that the powder purity of the powder produced by using the improved method and the uniformity of the ceramic body obtained from the powder are significantly improved. The invention is further illustrated by the following (reverse) examples. Counter Example 1: Latest Technology Product (CE1) A bismuth oxide (SCO) film manufactured by pulsed laser deposition (PLD) is available from STMC (Westerville, OH, USA). It

Sputtering Target Manufacturing Company)購得。使用阿 -10- 201034969 基米德原理分析該等靶材顯示出密度爲(3.90 ± 0.10) g/ml ( s.d.; n = 3 )。在剛破裂表面的橫斷面之SEM圖片( 如圖1左半部(CE1)所示)’可看出該材料具有高度孔 隙度,其導致相對較低之靶材密度。 藉由X射線繞射圖案硏究(如圖2下半部(C E1 )所 示)’可測定靶材主要由氧化緦銅 與 氧化銅 CuO[01-080-1268] 所組成 ,並 含有 微量碳 以及僅有微量靶材化合物Cu2Sr02[〇〇-〇38-1178]。(方括 Ο 號之間的數字係指 JCPDS-International Centre 的 Diffraction Data®之收集類號。)藉由線掃描(line scan )與面掃描(m a p p i n g )模式之X射線組成微量分析(能 量散布光譜儀)對於經拋光橫斷面進行進一步分析。此分 析確認(參考圖3 ( CE1 )變得更清楚)該靶材樣本的孔 隙度以及該材料的相當不均勻性質。由於在市面上尋找適 當靶材的整體困難度緣故,試驗文獻中所述之許多靶材製 〇法。 反例2 :文獻中所述之製法 a) Suzuki-Gauckler 法 —種在 Suzuki, Ryosuke 0·; Bohac, Petr; Gauckler, Ludwig J.之 Thermodynamics and phase equilibria in the strontium-copper-oxygen system, Journal of the American Ceramic Society ( 1 992 ),7 5 ( 1 0 ),2 8 3 3 -42 中所述之 製法,其使用製造多金屬氧化物之典型陶瓷方法(混合- -11- 201034969 搖動並烘烤)。該製程之起始材料爲CuO與SrC03 (分別 爲380.0 g與357.0 g),其經200目篩網過篩。因此該起 始材料係由小於7 5 μηι之粉末的混合物所組成,且藉由 Turbuta混合進一步均勻化。 然後進行下列製程: 步驟1 :在空氣中於9 5 0 °C下煅燒2 0 0小時 步驟2 :在環式磨機中碾磨經煅燒粉末直到所有粉末 通過200目篩網(&lt;75 μηι) 步驟3 :將粉末冷壓實成小九 步驟4 :在氬氣中於900t下燒結小九1 6小時 步驟5 :在環式磨機中碾磨經燒結小九直到所有粉末 通過200目篩網(&lt;75 μιη)(分析) 步驟6 :將粉末冷壓實成小九 步驟7 :在氬氣中於900 °C下燒結小九1 8小時 步驟8 :在環式磨機中碾磨經燒結小九直到所有粉末 通過200目筛網(&lt;75 μηι)(分析) 步驟9:將粉末冷壓實成小九 步驟1〇:在氬氣中於90(TC下燒結小九17小時 步驟1 1 :在環式磨機中碾磨經燒結小丸直到所有粉末 通過200目自帛網(&lt;75 μηι)(分析) 步驟1 2 :將粉末冷壓實成小九 步驟13 :在氬氣中於900°C下燒結小九66小時 步驟1 4 :在氮氣(1 〇〇 1 /h )中於7 7 5 °C下燒結小九4 小時 -12- 201034969 所得之小九顯示出從4.59至5.00 g/ml之密度(阿基 米德法)。第一次煅燒(步驟1 )之後、於步驟1 1之後及 在該程序結束(步驟14 )時對粉末樣本進行X射線繞射 分析。圖4 (下方之線:於步驟1之後’中間之線:於步 驟1 1之後,上方之線:程序結束時)的結果顯示該方法 之程序期間發生的實質改變。(將每一樣本之峰値標準化 成最.高峰値並在y軸隨意位移)。但即使在總程序時間多 於3 00小時(或接近兩週)之後亦很清楚看出此方法不會 〇 產生所希望產物。最終繞射圖表示佔大部分SrCu〇2相之 存在,其係從靶材化合物SrCu202所貢獻’較少部分亦來 自 Cu20、CuO 與 Sr14Cu2404i。 b )經修改 M a r t i n s ο η - G i η 1 e y 法 此方法使用從含水前驅體直接沉積薄膜,見 A Martinson 之 Synthesis of single phase S rCu2 02 from liquid precursors, DOE Energy Research Undergraduate Laboratory Fellowship Report, National Renewable energy Laboratory, Golden,Co ( 2002)。由於此方法係爲祀材化 合物之薄膜的直接沉積而發展,其係經修改以便獲得供進 一步處理與轉變成可用作物理氣相沉積之靶材的實心體之 粉末。 該原始製程係從甲酸銅(Cu ( CH200 ) 2.4H20 )及醋 酸緦(Sr ( CH3COO) 2)之溶液開始,其中Cu:Sr比恰好 爲2 : 1。藉由噴刷技術將此溶液施用於基板。將該基板加 -13- 201034969 熱至180°C。然後在775 t下於2.0 ΙΟ·5托耳氧氣氛中將具 有該沉積膜之基板退火4小時。在該退火期間結束時,將 該基板冷卻至室溫(於6 5 0 °C時停止氧氣流)。 在該經修改方法中,用於製造該粉末的原材料係與 Martinson-Ginley法相同,但該製程修改如下: • 於180°C下噴霧乾燥該溶液 • 於氮氣中在775 °C下進行退火4小時 • 在氮氣中冷卻至室溫 將分別爲1140.0 g與500.1 g之甲酸銅(四水)( Aldrich,97%)與醋酸緦(Aldrich)溶解於3_92 1之去礦 物質水。在配備有霧化器(SL 24_5〇/M-〇2/B,具有筆直 通道[493 - 1 8 8 9_019])之Niro實驗室規模噴霧乾燥器( S80)中噴霧乾燥該溶液。 在一管式爐中將該噴霧乾燥粉末加熱至775°C且在氮 氣氛下於775 °C維持4小時。以前驅體粉末裝塡約3/4之 石英坩堝。在煨燒期間觀察到明顯的體積膨脹。 從圖5中之XRD圖清楚看出,與表示純SrCu202 (上 方)、經Ca取代之SrCu202 (中間)的XRD光譜及預期 粉末圖案強度(下方)((取自 JCPDS 3 8 - 1 1 78 -Sputtering Target Manufacturing Company). The targets were analyzed using the A-10-201034969 Kimide principle to show a density of (3.90 ± 0.10) g/ml (s.d.; n = 3). The SEM picture of the cross section of the just ruptured surface (shown in the left half of Figure 1 (CE1)) can be seen to have a high degree of porosity which results in a relatively low target density. The X-ray diffraction pattern is studied (as shown in the lower half of Fig. 2 (C E1 )). The measurable target is mainly composed of beryllium copper oxide and copper oxide CuO [01-080-1268], and contains trace amounts. Carbon and only trace target compound Cu2Sr02 [〇〇-〇38-1178]. (The number between the square brackets refers to the collection number of the Diffraction Data® of the JCPDS-International Centre.) The X-ray composition of the line scan and the masking mode constitutes a microanalysis (energy dispersive spectrometer) ) Further analysis was performed on the polished cross section. This analysis confirms (see Figure 3 (CE1) to become clearer) the porosity of the target sample and the rather non-uniform nature of the material. Many of the target methods described in the test literature are due to the overall difficulty of finding the right target on the market. Counterexample 2: The method described in the literature a) Suzuki-Gauckler method - in Suzuki, Ryosuke 0; Bohac, Petr; Gauckler, Ludwig J. Thermodynamics and phase equilibria in the strontium-copper-oxygen system, Journal of the American Ceramic Society (1 992 ), 7 5 (1 0), 2 8 3 3 -42, a typical ceramic method for making multi-metal oxides (mixing - -11- 201034969 shaking and baking) . The starting materials for this process were CuO and SrC03 (380.0 g and 357.0 g, respectively), which were sieved through a 200 mesh screen. The starting material therefore consists of a mixture of powders of less than 75 μm and is further homogenized by Turbuta mixing. The following process was then carried out: Step 1: Calcination in air at 950 °C for 200 hours Step 2: Milling the calcined powder in a ring mill until all the powder passed through a 200 mesh screen (&lt;75 μηι Step 3: Cold compaction of the powder into small nine Step 4: Sintering at 900t in argon for nine nine hours 6 Step 5: Milling the sintered small nine in a ring mill until all the powder passes through the 200 mesh screen Net (&lt;75 μιη) (analysis) Step 6: Cold compaction of the powder into small nine Step 7: Sintering at 900 °C in argon for nine to eight hours Step 8: Milling in a ring mill Sintered small until all the powder passed through a 200 mesh screen (&lt;75 μηι) (analysis). Step 9: Cold compaction of the powder into small nine steps 1 〇: Sintering at 90 (TC) for 9:17 hours in argon Step 1 1 : Mill the sintered pellets in a ring mill until all the powder passes through a 200 mesh self-twisting net (&lt;75 μηι) (analysis). Step 1 2: Cold compaction of the powder into small nine steps 13: in argon Sintering at 900 ° C for 9 to 66 hours in the gas. Step 1 4: Sintering at 7 7 5 ° C in nitrogen (1 〇〇 1 /h) for 9 to 12 hours - 201034969 Nine shows a density from 4.59 to 5.00 g/ml (Archimedes method). After the first calcination (step 1), after step 1 1 and at the end of the procedure (step 14), the powder sample is X. Ray diffraction analysis. Figure 4 (lower line: after the step 1 'the line in the middle: after step 1 1 , the line above: at the end of the program) shows the substantial changes that occurred during the procedure of the method. The peak of each sample is normalized to the highest peak and is randomly displaced on the y axis. But even after the total program time is more than 300 hours (or nearly two weeks), it is clear that this method will not produce The desired product. The final diffraction pattern represents the majority of the SrCu〇2 phase, which is contributed from the target compound SrCu202. The lesser part is also derived from Cu20, CuO and Sr14Cu2404i. b) Modified Margins ο η - G i η 1 ey Method This method uses a direct deposition of a film from an aqueous precursor, see A Martinson's Synthesis of single phase S rCu2 02 from liquid precursors, DOE Energy Research Undergraduate Laboratory Fellowship Report, Nationa l Renewable energy Laboratory, Golden, Co (2002). Since this method has been developed for the direct deposition of a film of a coffin compound, it has been modified to obtain a powder for further processing and conversion into a solid body which can be used as a target for physical vapor deposition. The original process started with a solution of copper formate (Cu (CH200) 2.4H20) and strontium acetate (Sr(CH3COO) 2) with a Cu:Sr ratio of exactly 2:1. This solution was applied to the substrate by a spray technique. The substrate was heated from -13 to 201034969 to 180 °C. The substrate having the deposited film was then annealed at 775 t in a 2.0 Torr. 5 Torr atmosphere for 4 hours. At the end of the annealing period, the substrate was cooled to room temperature (the oxygen flow was stopped at 65 °C). In this modified method, the raw material used to make the powder is the same as the Martinson-Ginley method, but the process is modified as follows: • Spray drying the solution at 180 ° C • Annealing at 775 ° C in nitrogen 4 Hour • After cooling to room temperature under nitrogen, 1140.0 g and 500.1 g of copper formate (tetrahydrate) (Aldrich, 97%) and cesium acetate (Aldrich) were dissolved in 3_92 1 of demineralized water, respectively. The solution was spray dried in a Niro laboratory scale spray dryer (S80) equipped with an atomizer (SL 24_5 〇 / M - 〇 2 / B, with straight channels [493 - 1 8 8 9_019]). The spray dried powder was heated to 775 ° C in a tube furnace and maintained at 775 ° C for 4 hours under a nitrogen atmosphere. The precursor powder was loaded with about 3/4 of the quartz crucible. Significant volume expansion was observed during the simmering. It is clear from the XRD pattern in Fig. 5 that the XRD spectrum and the expected powder pattern intensity (below) with pure SrCu202 (top), Ca-substituted SrCu202 (middle) (taken from JCPDS 3 8 - 1 1 78 -

International Centre 的 Diffraction Data®)的圖 6 相比之 下,該材料在煅燒後並非純相,且係數種產物之混合物。Figure 6 of the International Centre's Diffraction Data®) is a mixture of products that are not pure phase after calcination.

從製造均勻溶液的順序之製造觀點來看,噴霧乾燥與 所得之粉末的煅燒經常可以直接噴霧燃燒或噴霧熱解技術 替代。此方法係從上述相同前驅體開始’但使用在5 8 0°C -14- 201034969 下噴霧燃燒代替在180 °C之噴霧乾燥步驟。如步驟b)在 77 5 °C下將所得之粉末進一步退火。 觀察到在該等條件下形成之主要相係菱緦礦(SrC03 )、黑銅礦(CuO )、氧化銅(I ) ( Cu20 )與銅。亦觀 察到不明的銅損失。 不得不斷定此方法無法產生正確組成物。其顯示出在 從含碳之菱緦礦開始的材料中,出現該菱緦礦爲最終產物 _ 。該碳酸緦係非常安定之化合物,其分解溫度爲1 075°C。 〇 在氧化氣氛中,可觀察到約800°C之較低分解溫度,然而 報告指出於C02氣氛中分解作用係在約1220 °C。由於製造 靶材化合物需要非氧化環境(以避免Cu ( I )氧化成Cu ( II )狀態),故所形成之任何碳酸鹽的分解溫度會高於 1 0 5 0 t:。 c ) K u d 〇 法The spray drying and calcination of the resulting powder can often be replaced by direct spray combustion or spray pyrolysis techniques from the point of view of the manufacture of the sequence of the homogeneous solution. This method starts with the same precursor described above but uses spray combustion at 580 ° C -14 - 201034969 instead of the spray drying step at 180 °C. The resulting powder was further annealed as described in step b) at 77 5 °C. The main phases formed by these conditions were the rhombohedrite (SrC03), the black copper ore (CuO), the copper (I) oxide (Cu20) and copper. An unknown copper loss was also observed. This method cannot be continually determined to produce the correct composition. It shows that in the material starting from the carbon-containing rhombohedrite, the rhombohedral ore is the final product _. The lanthanum carbonate is a very stable compound having a decomposition temperature of 1 075 °C.较低 A lower decomposition temperature of about 800 ° C can be observed in an oxidizing atmosphere, however the report indicates that the decomposition is about 1220 ° C in the CO 2 atmosphere. Since the production of the target compound requires a non-oxidizing environment (to avoid the oxidation of Cu(I) to the Cu(II) state), the decomposition temperature of any carbonate formed will be higher than 1 0 50 t:. c) K u d 〇 method

從先前方法的觀察,有關碳酸緦之安定性可藉由 Kudo之硏究所啓發之方法評估:見Kudo, A.; Yanagi,H·; Η o s ο η ο, Η.; Kawazoe, Η.之 A new p-type conductive oxide with wide band gap, S r C u 2 O 2 , Materials Research Society Symposium Proceedings ( 1 9 9 8 ) , 526 ( Advances inFrom the observations of previous methods, the stability of strontium carbonate can be evaluated by the method inspired by Kudo's research: see Kudo, A.; Yanagi, H·; Η os ο η ο, Η.; Kawazoe, Η. A new p-type conductive oxide with wide band gap, S r C u 2 O 2 , Materials Research Society Symposium Proceedings (1 9 9 8 ) , 526 ( Advances in

Laser Ab 1 at i ο η o f M at er i a 1 s ) , 2 9 9 - 3 04,以及 Kudo,Laser Ab 1 at i ο η o f M at er i a 1 s ) , 2 9 9 - 3 04, and Kudo,

Atsushi; Yanagi, Hiroshi; Ueda, Kazushige; Hosono, Hideo; Kawazoe, Hiroshi; Y an o, Yo shihiko 之 Fabrication of transparent p-n heterojunction thin-film diodes based -15- 201034969 entirely on oxide semiconductors, Applied Physics Letters (1 999 ) ,75 ( 18) ,2851 -2 853。 作爲起始材料,該方法使用c u 2 O與s r C O 3,其係以 化學計量2:1 Cu:Sr之比混合。將該等原材料緊密混合並 於安裝有120 μηι舗網的Retsch ZM100磨機中碾磨。將該 混合物置於950°C下氮氣流(24〇 Ι/h)中爲時40小時。在 氮氣下冷卻該經燒結體之後,再硏磨該產物並藉由800 kg/cm2之冷均壓壓成小九。所得之小丸在8 5 0 °C下於氮氣 中燒結1 〇小時。 該粉末之化學分析顯示出(以質量百分比表示)所得 之產物含有( 35.23 ± 0.07)質量%之Sr與(51.19 ± 0.06 )質量%之C u。殘留碳污染總計達〇 · 〇 4 3 - 〇 . 〇 5 9質量%之 C。X射線粉末繞射得知該方法中吾人獲得具有少量金屬 銅雜質之正確材料相’如圖7所示,提供經煅燒粉末之粉 末繞射圖’其峰位表(下圖,上方之線)以及 SrCu202 [00-03 8 -U78](下圖,中間之線)與(:11[01_070-3 0 3 9 ](下圖,下方之線)的峰位表。 該粉末係經冷壓實與較低壓力燒結,但結果卻變成非 常脆’其密度無主要改善。所得之小九於拋光期間破裂。 因此’將壓實法改成熱壓。下列熱循環係用於壓實該方法 所獲得之粉末(3 0 mm石墨模,塗覆氮化硼)。 1 ·在20 kN下冷壓實 2.在最小載重(4 kN )下以50。(: /min加熱Atisushi; Yanagi, Hiroshi; Ueda, Kazushige; Hosono, Hideo; Kawazoe, Hiroshi; Y ano, Yo shihiko's Fabrication of transparent pn heterojunction thin-film diodes based -15- 201034969 entirely on oxide semiconductors, Applied Physics Letters (1 999 ), 75 (18), 2851 - 2 853. As a starting material, the process uses c u 2 O and s r C O 3 , which are mixed in a stoichiometric ratio of 2:1 Cu:Sr. The raw materials were intimately mixed and milled in a Retsch ZM100 mill equipped with a 120 μηι net. The mixture was placed in a stream of nitrogen (24 Torr / h) at 950 ° C for 40 hours. After cooling the sintered body under nitrogen, the product was further honed and pressed into a small nine by a cold pressure of 800 kg/cm2. The pellet obtained was sintered in nitrogen at 850 ° C for 1 hr. Chemical analysis of the powder showed (in terms of mass percentage) that the obtained product contained (35.23 ± 0.07) mass% of Sr and (51.19 ± 0.06) mass% of Cu. Residual carbon pollution amounts to 〇 · 〇 4 3 - 〇 . 〇 5 9 mass% of C. X-ray powder diffraction knows that in this method, we obtain the correct material phase with a small amount of metallic copper impurities. As shown in Fig. 7, the powder diffraction pattern of the calcined powder is provided, and its peak position table (below, upper line) And the peak position table of SrCu202 [00-03 8 -U78] (lower figure, middle line) and (:11[01_070-3 0 3 9 ] (lower figure, lower line). The powder is cold compacted. Sintering with lower pressure, but the result becomes very brittle 'there is no major improvement in density. The resulting small IX breaks during polishing. Therefore 'change the compaction method to hot pressing. The following thermal cycle is used to compact the method Powder obtained (30 mm graphite mold, coated with boron nitride) 1 · Cold compaction at 20 kN 2. 50 ° at minimum load (4 kN) (: / min heating

3_於900°C下載重從4增加至10kN -16- 2010349693_ at 900 ° C download weight increased from 4 to 10kN -16- 201034969

4. 於975 °C下載重從10增加至20kN 5. 於975 °C下暫停30分鐘 6. 藉由自然對流冷卻 所獲得靶材之密度爲5 · 3 3 ± 0 . 1 0 g/m 1。 實施例3 :根據本發明「貧碳酸鹽法」之實例 0 雖然考慮到使用碳酸鹽作爲起始材料之得自上述4. Increase the download weight from 10 to 20kN at 975 °C 5. Pause for 30 minutes at 975 °C 6. The density of the target obtained by natural convection cooling is 5 · 3 3 ± 0 . 1 0 g/m 1 . Example 3: Example of "carbonate-lean method" according to the present invention 0 Although it is considered from the above that carbonate is used as a starting material

Kudo法之最終產物的碳污染較低,且所使用溫度在完全 熱分解的低溫一側,但已試圖進一步降低該材料中之碳爲 底質雜質的量。因此,發展一種與Kudo法相似但使用 Sr(OH) 2_8H2〇作爲反應物的方法。該方法稱爲「貧碳 酸鹽法」。在業界(例如S ο 1 v a y S A ),習知 Sr ( OH ) zHO係Sr-氫氧化物的最常見形式。同時進行 一批Kudo與該貧碳酸鹽法以便在相同條件下製備與分析 ❹ 樣本。 圖8中’該X射線繞射圖案彙總此二方法(Kudo法 :上方’貧碳酸鹽法:下方)。已識別二者材料均爲 SrChO2 ’明顯看出存在某些微量雜質(例如Kudo例中之 銅)。The final product of the Kudo process has a lower carbon contamination and the temperature used is on the low temperature side of the complete thermal decomposition, but attempts have been made to further reduce the amount of carbon in the material as a substrate impurity. Therefore, a method similar to the Kudo method but using Sr(OH) 2_8H2 oxime as a reactant was developed. This method is called "carbonate-lean method". In the industry (for example, S ο 1 v a y S A ), the most common form of Sr ( OH ) zHO is a Sr-hydroxide. A batch of Kudo and the lean carbonate method were simultaneously performed to prepare and analyze the ruthenium sample under the same conditions. The X-ray diffraction pattern in Fig. 8 summarizes the two methods (Kudo method: upper 'carbonation-lean method: lower). It has been identified that both materials are SrChO2', and it is apparent that some trace impurities (such as copper in the Kudo case) are present.

Kudo法與貧碳酸鹽法之最終產物的碳含量分別爲 0.072%與0.03 4%。本發明產物中存在之碳污染可表示氫 氧化緦原材料從大氣吸收二氧化碳’而非從所使用碳酸鹽 所產生。製造充分材料以探究產生在靶材之發展中係視爲 -17- 201034969 有利的較高密度之壓實程序的條件。方法2-c之壓實程序 係以經修改方式使用’其中改變控制參數諸如溫度、壓力 、與持續時間,產生下表之結果。 表1 :壓實結果 溫度rc) 壓力(kN) 時間(min) P (g/ml) 975 20 30 5.439 975 20 45 5.345 975 25 30 5.411 1025 20 30 5.414 1025 25 30 5.472 1025 20 45 5.425 975 25 45 5.446 1025 25 45 5.458 (P :密度) 應注意的是,壓力表示爲施用在3 cm直徑(表面: 7.07 cm2 )之靶材上力,20 kN 相當於 2.8 3 kN/cm2,2 5 kN 相當於 3.54 kN/cm2。 結論是,可說明使用對於密度具有正面影響的提高之 壓力與溫度以及具有少許負面影響的較長持續時間可獲得 較高密度。然而應小心勿過份地提高溫度與延長持續時間 以避免分解。 與反例1中之靶材相較’本發明方法之靶材顯示出遠 遠更純之相,確實存在該靶材化合物以及僅僅微量與起始 產物有關之其他雜質。此係示於圖2 :上半部分:本發明 之材料(貧碳酸鹽),下半部分:反例1之材料。 -18- 201034969 在剛破裂表面之橫斷面的SEM圖上,如圖1-右半部 分(實施例3)所示’可看出該材料的孔遠少於反例1之 材料。見圖3 (實施例3對CE1 ),藉由X射線組成微量 分析(能量散布光譜儀)比較元素氧(右上方)、銅(左 下方)與緦(右下方)之分析,注意到本發明之靶材的組 成均勻性更高’因此在預期融蝕/侵鈾深度下該濺鍍膜中 之組成變化(Sr/Cu比)較小(假設不存在優先融蝕/侵 _ 蝕或濺鍍)。 ❸ 由於可觀察到原材料於Retsch ZM100中碾磨步驟期 間’因使用Sr ( OH ) 2·8Η20之故,結晶水釋出使該粉末 混合物變成黏性糊劑,較佳係在Turbula混合器中徹底機 械式混合1小時代替該Retsch ZM100離心分離碾磨步驟 ’然後於8 CTC真空乾燥。應注意二者材料均顯示相同且所 希望之X射線繞射圖(見圖9:上方:使用Retsch磨機; 下方:使用Turbula混合器),使用原始製程所獲得之粉 Q 末中具有更明顯之微量Cu20。儘管存在使用The carbon content of the final product of the Kudo method and the lean carbonate method was 0.072% and 0.03 4%, respectively. The carbon contamination present in the products of the present invention may mean that the barium hydroxide raw material absorbs carbon dioxide from the atmosphere rather than from the carbonate used. Sufficient materials are fabricated to explore the conditions that result in a higher density compaction procedure that is advantageous in the development of the target as -17-201034969. The compaction procedure of Method 2-c is used in a modified manner where the control parameters such as temperature, pressure, and duration are varied to produce the results of the table below. Table 1: Compaction Results Temperature rc) Pressure (kN) Time (min) P (g/ml) 975 20 30 5.439 975 20 45 5.345 975 25 30 5.411 1025 20 30 5.414 1025 25 30 5.472 1025 20 45 5.425 975 25 45 5.446 1025 25 45 5.458 (P: Density) It should be noted that the pressure is expressed as a force applied to a target of 3 cm diameter (surface: 7.07 cm2), 20 kN is equivalent to 2.8 3 kN/cm2, and 2 5 kN is equivalent. 3.54 kN/cm2. The conclusion is that higher densities can be achieved using increased pressure and temperature that have a positive effect on density and a longer duration with a few negative effects. However, care should be taken not to excessively increase the temperature and extend the duration to avoid decomposition. Compared to the target of the counterexample 1, the target of the method of the present invention exhibits a far more pure phase, and the target compound and only a small amount of other impurities associated with the starting product are indeed present. This is shown in Figure 2: upper part: material of the invention (carbonate-depleted), lower part: material of the reverse example 1. -18- 201034969 On the SEM image of the cross-section of the just-ruptured surface, as shown in Figure 1 - right half (Example 3), it can be seen that the material has much fewer pores than the material of Example 1. See Figure 3 (Example 3 vs. CE1), comparing the analysis of elemental oxygen (upper right), copper (lower left) and 缌 (bottom right) by X-ray composition microanalysis (energy dispersive spectrometer), noting the invention The composition has a higher uniformity of composition. Therefore, the composition change (Sr/Cu ratio) in the sputter film is small at the expected ablation/intrusion uranium depth (assuming there is no preferential ablation/invasion or sputtering). ❸ Since the raw material can be observed during the milling step in Retsch ZM100, 'the use of Sr ( OH ) 2·8Η20, the release of crystal water makes the powder mixture into a viscous paste, preferably in a Turbula mixer. Mechanical mixing was carried out for 1 hour instead of the Retsch ZM100 centrifugal separation milling step 'and then dried under vacuum at 8 CTC. It should be noted that both materials show the same and desired X-ray diffraction pattern (see Figure 9: top: using a Retsch mill; bottom: using a Turbula mixer), which is more pronounced in the powder Q obtained using the original process. A trace of Cu20. Despite the use

Sr ( OH ) 2.8H20碾磨之方法所造成的固有機械問題,但 可歸納出二者材料相同且適於製造靶材。 在熱處理條件下試驗所獲得之未經處理粉末。使用適 當之混合與真空乾燥步驟避免形成糊劑,且在氮氣中於 9 50°C下進行40小時的熱壓步驟之後,觀察到於Retsch ZM100磨機(且於80 μπι過篩)的二次碾磨之質量降低 19.6%,對照之下原始製程(使用「原來」之Retsch離心 碾磨步驟)爲33.3%。該壓製循環形成從黑色變成灰色之 -19- 201034969 顏色改變。 就「原始製程」粉末而言,顏色改變表示已發生氧化 或改質。從剩餘材料之分析得知在該煅燒材料中可發現少 量初始產物(即,氫氧化緦),很可能在熱壓循環期間引 發其他非刻意反應。若在Turbula混合之後,於該熱壓循 環之前省略真空乾燥步驟,結果變成在壓實與冷卻之後, 所有靶材碎裂成粉末。此並非以使用碾磨(Retsch )或碾 磨(Turbula)及真空乾燥之貧碳酸鹽法所形成之靶材的情 況。即使在該磨機內形成糊劑的代價係額外混合/乾燥步 驟,但用於令該製造升級的較佳方法應避免此情況。 實施例4 :製備靶材BaSrCu202 與實施例3相似,該靶材製造方法可彙總如下: 秤重 Cu20、Sr(OH) 2.8H20 與 Ba(OH) 2.8H20=&gt; 使用Turbula混合器混合組份=&gt; 在真空下於80-9(TC乾燥組份4天=&gt; 於Retsch ZM100離心磨機中混合並碾磨至80 μηι =&gt; 在爐中於氮氣下在9 5 0°C下反應爲時40小時=&gt; 於Retsch ZM100離心磨機中混合並碾磨至250 μιη =&gt; 於Retsch ΖΜ1 00離心磨機中混合並碾磨至80 μιη =&gt; 包裝與密封=&gt; 實施壓實、冷壓=&gt; 加熱至9 7 5 °C並保持該溫度=&gt; 冷卻=&gt; -20- 201034969 硏磨與拋光。 【圖式簡單說明】 茲藉由下列圖式圖解說明本發明: 圖1 :靶材之剛產生橫斷面的S E Μ影像之比較 圖2 :先前技術與本發明產物的X射線繞射圖案之比 較 圖3 a與3 b :先前技術與本發明產物之E D S線成份分 析(line analysis)與面成份分析(mapping) 圖4 : Suzuki-Gauckler法整個合成期間之XRD演變 圖 5: Martinson-Ginley法之經锻燒粉末的粉末繞射 圖The inherent mechanical problems caused by the Sr ( OH ) 2.8H20 milling method, but can be summarized as the same material and suitable for the manufacture of targets. The untreated powder obtained was tested under heat treatment conditions. The formation of the paste was avoided using a suitable mixing and vacuum drying step and was observed twice in a Retsch ZM100 mill (and sieved at 80 μπι) after a 40 hour hot pressing step at 950 ° C in nitrogen. The quality of the mill was reduced by 19.6%, compared to 33.3% of the original process (using the "original" Retsch centrifugal milling step). The pressing cycle forms a color change from black to gray -19- 201034969. For "raw process" powders, a color change indicates oxidation or modification has occurred. From the analysis of the remaining material, it is known that a small amount of initial product (i.e., barium hydroxide) can be found in the calcined material, and it is likely to induce other unintended reactions during the hot press cycle. If the vacuum drying step is omitted before the hot pressing cycle after the Turbula mixing, the result becomes that all the targets are broken into powder after compaction and cooling. This is not the case with targets formed using the Retsch or Turbula and vacuum dried carbonate lean processes. Even if the cost of forming a paste in the mill is an additional mixing/drying step, the preferred method for upgrading the manufacturing should avoid this. Example 4: Preparation of target BaSrCu202 Similar to Example 3, the target manufacturing method can be summarized as follows: Weighing Cu20, Sr(OH) 2.8H20 and Ba(OH) 2.8H20=&gt; Mixing components using a Turbula mixer =&gt; Under vacuum at 80-9 (TC dry component for 4 days => mixed in a Retsch ZM100 centrifugal mill and milled to 80 μηι =&gt; in a furnace under nitrogen at 950 °C The reaction was carried out for 40 hours = &gt; mixed in a Retsch ZM100 centrifugal mill and milled to 250 μm =&gt; mixed in a Retsch ΖΜ1 00 centrifugal mill and milled to 80 μm =&gt; Packaging & Sealing =&gt; Compaction, cold pressing => Heating to 9 7 5 °C and maintaining the temperature => Cooling => -20- 201034969 Honing and polishing. [Simple description] The following diagram illustrates this text. Invention: Figure 1: Comparison of SE Μ images of a cross section of a target material. Figure 2: Comparison of X-ray diffraction patterns of prior art and products of the present invention. Figures 3 a and 3 b: prior art and products of the present invention EDS line analysis and face composition analysis Figure 4: XRD evolution during the entire synthesis of the Suzuki-Gauckler method Figure 5: Powder diffraction of calcined powder by Martinson-Ginley method

圖6 :整體相SrCu202、經Ca取代之SrCu202的XRD 0 /2 0光譜及預期粉末圖案強度 圖7 : Kudo法之經煅燒粉末的粉末繞射圖、其峰位表 (peaklist)以及SrCu202與Cu之峰位表 圖 8: Kudo 與貧碳酸鹽法(Carbonate lean method) 之X射線繞射圖案的比較 圖9 :不同貧碳酸鹽法之X射線繞射圖案的比較 -21 -Figure 6: XRD 0 /2 0 spectrum and expected powder pattern intensity of the overall phase SrCu202, Ca-substituted SrCu202 Figure 7: Powder diffraction pattern of the calcined powder of Kudo method, its peak list and SrCu202 and Cu Peak position chart Figure 8: Comparison of Kudo and X-ray diffraction patterns of the Carbonate lean method Figure 9: Comparison of X-ray diffraction patterns of different carbonate-poor methods-21 -

Claims (1)

201034969 七、申請專利範圍: 1·—種製造經製九之氧化物材料MxSri xCU2+a〇2+b的 方法’其中-0.29S0.2’ -0.24S0.2,且 M 係由 Ba、Ra、 Mg、Be、Mn、Zn、Pb、Fe、Cu、c〇、Ni、Sn、Pd、Cd、 Hg、Ca、Ti、V ' Cr所組成之二價元素之群組中的一或多 者,其中O^xSO·2;該方法包括以下步驟: -提供具有給定顆粒大小分布的前驅體混合物,且包 含化學計量數量之Cu20、Sr(OH) 2.8H20,且當0&lt;χ£0.2 時包含Μ -氫氧化物, -緊密混合該前驅體混合物以便製得均勻混合物,及 -在高於850 °C之溫度下燒結該均勻混合物。 2 ·如申請專利範圍第1項之方法,其中在緊密混合 該前驅體混合物之步驟期間,維持該給定顆粒大小分布, 及在緊密混合該前驅體混合物與燒結該均勻混合物的步驟 之間,該均勻混合物經歷在60°C與100°C之間的溫度下之 煅燒步驟。 3 .如申請專利範圍第2項之方法,其中該緊密混合 步驟係在一 Turbula混合器中進行。 4. 如申請專利範圍第2或3項之方法’其中該煅燒 步驟係一真空乾燥步驟。 5. 如申請專利範圍第1至4項中任一項之方法’其 另外包括藉由在高於950°C之溫度及爲至少2.5 kN/cm2, 較佳爲至少3 .5 kN/cm2之壓力下對該經製九之氧化物材料 進行熱壓實循環而製備靶材之步驟。 -22- 201034969 6. 如申請專利範圍第5項之方法,其中該熱壓實循 環係在975°C與l〇25°C之間的溫度下進行。 7. 如申請專利範圍第1至6項中任一項之方法,其 中 〇&lt;x£〇.2’ M = Ba 且 M -氣氧化物爲 Ba(OH) 2.8H2O。 8. —種粉末狀氧化物材料SrCu2 + a02 + b,其中 -0.2950.2,-〇.2SbS〇.2 ’其特徵係殘留碳含量爲低於4〇〇 ppm,且可由如申請專利範圍第1至7項中任一項之方法 製得。 9· 一種如申請專利範圍第8項之粉末狀氧化物材料 用於製造靶材的用途’該靶材之密度爲至少5.30 g/mi, 且可由包括以下步驟之方法製得: -在高於850°C之溫度下燒結如申請專利範圍第1項 之均勻混合物’由此製得經製九之氧化物材料,及 -在高於95〇°C之溫度及爲至少2.5 kN/cm2,較佳爲 至少3 · 5 kN/Cm2之壓力下對該經製九之氧化物材料進行熱 壓實循環。 10.如申請專利範圔第9項之用途,其中該靶材之密 度爲至少5.40 g/ml ’較佳爲5 45 g/ml。 1 1 .如申請專利範圍第9或1 0項之用途,其係用於 製備供P型透明導電膜之pVD沉積用之靶材。 -23-201034969 VII. Scope of application for patents: 1. A method for manufacturing MxSri xCU2+a〇2+b, which is made of niobium oxide material, of which -0.29S0.2' -0.24S0.2, and M is made of Ba, Ra One or more of a group of divalent elements composed of Mg, Be, Mn, Zn, Pb, Fe, Cu, c〇, Ni, Sn, Pd, Cd, Hg, Ca, Ti, V'Cr Wherein O^xSO·2; the method comprises the steps of: - providing a precursor mixture having a given particle size distribution, and comprising a stoichiometric amount of Cu20, Sr(OH) 2.8H20, and when 0 &lt; A cerium-hydroxide is included, - the precursor mixture is intimately mixed to produce a homogeneous mixture, and - the homogeneous mixture is sintered at a temperature above 850 °C. 2. The method of claim 1, wherein the step of intimately mixing the precursor mixture maintains the given particle size distribution, and between the step of intimately mixing the precursor mixture with sintering the homogeneous mixture, The homogeneous mixture is subjected to a calcination step at a temperature between 60 ° C and 100 ° C. 3. The method of claim 2, wherein the intimate mixing step is carried out in a Turbula mixer. 4. The method of claim 2, wherein the calcining step is a vacuum drying step. 5. The method of any one of claims 1 to 4, which additionally comprises, by a temperature above 950 ° C and at least 2.5 kN/cm 2 , preferably at least 3.5 kN/cm 2 The step of preparing the target by subjecting the niobium oxide material to a hot compaction cycle under pressure. -22- 201034969 6. The method of claim 5, wherein the hot compaction cycle is carried out at a temperature between 975 ° C and 10 ° ° ° C. 7. The method of any one of claims 1 to 6, wherein 〇&lt;x£〇.2' M = Ba and the M-gas oxide is Ba(OH) 2.8H2O. 8. A powdered oxide material SrCu2 + a02 + b, wherein -0.2950.2, -〇.2SbS〇.2' has a characteristic residual carbon content of less than 4〇〇ppm, and may be as claimed in the patent application The method of any one of items 1 to 7 is prepared. 9. A use of a powdered oxide material as claimed in claim 8 for the manufacture of a target having a density of at least 5.30 g/mi and which may be obtained by a process comprising the steps of: - above Sintering a homogeneous mixture as in claim 1 of the patent at the temperature of 850 ° C, thereby producing a niobium oxide material, and - at a temperature above 95 ° C and at least 2.5 kN / cm 2 , Preferably, the niobium oxide material is subjected to a hot compaction cycle at a pressure of at least 3 · 5 kN/cm 2 . 10. The use of claim 9, wherein the target has a density of at least 5.40 g/ml', preferably 5 45 g/ml. 1 1. The use of the ninth or tenth aspect of the patent application for the preparation of a target for pVD deposition of a P-type transparent conductive film. -twenty three-
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