201021972 六、發明說明： 【發明所屬之技術領域】 本發明係相關於一種在硏磨半導體晶圓 之硏磨墊。 【先前技術】 過去，使半導體晶圓進行鏡面加工、或 件時，對絕緣膜或導電體膜的凹凸進行平坦 用之硏磨墊，係使用一種使聚胺甲酸酯樹脂 的比較軟質之硏磨墊、或由發泡聚胺甲酸酯 墊（參考專利文獻1〜4)。 其中，在半導體元件製造用途，需被硏 之硏磨速度變快，而不需被硏磨部分的凹部 慢，必須因應對於平坦化性能之高要求，爲 能，一般，使用由發泡聚胺甲酸酯形成的比 塾。 一般，爲使硏磨漿液均勻且充分地供應 圓表面，或將晶圓表面發生刻痕的原因之硏 至預防因硏磨墊的吸附所造成晶圓的破損等 墊的硏磨側表面形成溝或孔（參考上述專利 惟，於硏磨墊的表面單獨形成溝或孔時 合上述目的。 亦即，於硏磨墊表面只形成溝時，通常 狀的溝，因硏磨屑的排出性低，易於晶圓表 爲抑制刻痕的發生而於低壓高速旋轉之條件 墊/晶圓間易於流體潤滑，硏磨速度降低， 等時，有助益 製造半導體元 化加工時所使 含浸於不織布 所形成之硏磨 磨部分的凸部 之硏磨速度變 達成此要求性 較硬質之硏磨 至被硏磨的晶 磨屑排出，甚 ，而於此硏磨 文獻2~4 )。 •不易完全符 採用的同心圓 面發生刻痕。 進行硏磨時， 且於晶圓的各 201021972 處，硏磨速度無參差不齊之性能即硏磨均勻性，有降低之 趨勢。又格子狀溝，因硏磨屑的排出性良好且硏磨漿液亦 易於過度排出，故不易使硏磨漿液均勻且充分地供應至晶 圓表面，導致必須增加硏磨漿液之供應量，結果提髙運轉 成本。 另一方面，於硏磨墊表面只形成孔時，與同心圓狀的 溝相同，因硏磨屑的排出性低，而易於晶圓表面發生刻痕。 硏磨墊上的硏磨漿液之流動性變差，硏磨漿液於晶圓表面 φ 之供應性降低，硏磨速度或硏磨均句性亦易於降低。爲解 決上述問題，雖倂用溝和孔（參考上述專利文獻2及4)， 尙無法完全符合上述課題。 從降低成本、品質管理等觀點，在半導體元件製造用 途的硏磨墊中，多數的晶圓必須爲即使經過長時間的硏 磨，硏磨性能之變化小而延長使用壽命，惟先前的硏磨墊， 持續長時間硏磨時，其硏磨性能易於變化，爲延長硏磨墊 之使用壽命，有更進一步改良之空間。 φ 專利文獻 [專利文獻1]特開平5— 8178號公報 [專利文獻2]特開平9 — 117855號公報 [專利文獻3]特開2000 — 178374號公報 [專利文獻4]特開2002 — 160153號公報 【發明内容】 發明欲解決之課題 本發明之目的係提供一種可得到高硏磨速度，硏磨均 勻性及平坦化性能優異，且具有少發生刻痕等優異的硏磨 201021972 性能，即使持續長時間的硏磨，硏磨性能的變化小而使用 壽命長之硏磨墊。 解決課題之手段 爲達成上述目的，本發明者們致力硏究之結果發現， 在具有已形成溝及孔的硏磨層之硏磨墊中，藉由使溝的深 度比孔的深度更大，可達成上述目的，基於此發現並更進 —步硏討，而完成本發明。 亦即，本發明係關於： π]—種硏磨墊，其係至少含有硏磨層之硏磨墊， 其特徵爲具有開口於此硏磨層的硏磨側表面之溝和開 口於此硏磨層的硏磨側表面之孔，平均每個孔的開口部 位之面積爲0.05mm2以上， 且此溝之深度、此孔之深度及此硏磨層之厚度係符合 下述式（1 ):201021972 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a honing pad for honing a semiconductor wafer. [Prior Art] In the past, when the semiconductor wafer was mirror-finished or used, the lining pad for flattening the unevenness of the insulating film or the conductor film was used to make the polyurethane resin softer. A polishing pad or a foamed polyurethane pad (refer to Patent Documents 1 to 4). Among them, in the manufacture of semiconductor components, the honing speed of the enamel is required to be fast, and the concave portion of the honing portion is not required to be slow, and it is necessary to respond to the high requirements for the flattening performance, and generally, the foamed polyamine is used. The ratio of formate formation. Generally, in order to uniformly and fully supply the round surface of the honing slurry, or to cause the surface of the wafer to be scored, it is possible to prevent the wafer from being damaged due to the adsorption of the lining pad, etc. Or the hole (refer to the above patent, only when the groove or the hole is separately formed on the surface of the honing pad, the above purpose is achieved. That is, when only the groove is formed on the surface of the honing pad, the normal groove is low due to the discharge of the razor chip. It is easy for the wafer table to suppress the occurrence of nicks, and it is easy to fluidly lubricate between the conditions of the low-pressure and high-speed rotation. The honing speed is reduced, and the isochronous time is beneficial to the impregnation of the non-woven fabric during the semiconductor processing. The honing speed of the convex portion of the formed honing portion becomes such a requirement that the honing of the hardened honing is discharged to the honed crystal swarf, and, in particular, the literature 2 to 4). • It is not easy to fully use the scored surface of the concentric circle. When honing, and at each of the wafers at 201021972, the honing speed is not uneven, that is, the honing uniformity has a tendency to decrease. In addition, the lattice-like groove has a good discharge property of the razor chips and the eucalyptus slurry is also easily discharged excessively, so that it is difficult to uniformly and sufficiently supply the honing slurry to the surface of the wafer, which necessitates an increase in the supply amount of the honing slurry.髙 Operating costs. On the other hand, when only a hole is formed in the surface of the honing pad, the same as the groove of the concentric shape, the discharge of the swarf is low, and the surface of the wafer is easily scored. The fluidity of the honing slurry on the honing pad is deteriorated, the supply of the honing slurry on the wafer surface φ is lowered, and the honing speed or the honing rate is also easily reduced. In order to solve the above problems, although the grooves and the holes are used (refer to Patent Documents 2 and 4 above), the above problems cannot be fully satisfied. From the viewpoints of cost reduction and quality management, in the honing pad for semiconductor component manufacturing, most wafers must have a small change in honing performance and prolong the service life even after a long time of honing, but the previous honing When the mat is honed for a long time, its honing performance is easy to change, and there is room for further improvement in order to extend the service life of the honing pad. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION An object of the present invention is to provide an excellent honing speed, excellent honing uniformity and flattening performance, and excellent honing performance in 201021972, even if it continues A long time honing, a honing pad with a small change in honing performance and a long service life. Means for Solving the Problem In order to achieve the above object, the inventors of the present invention have found that in the honing pad having the honing layer in which the groove and the hole have been formed, by making the depth of the groove larger than the depth of the hole, The above object can be attained, and the present invention has been completed based on this finding and further progress. That is, the present invention relates to: a π]-type honing pad, which is a honing pad containing at least a honing layer, characterized by having a groove and opening opening to the honing side surface of the honing layer. The hole of the honing side surface of the grinding layer has an average opening area of each hole of 0.05 mm 2 or more, and the depth of the groove, the depth of the hole and the thickness of the honing layer are in accordance with the following formula (1):
(1 ) Z > X > Y (式中，X表示爲溝之深度，Y表示爲孔之深度，Z 表示爲硏磨層之厚度）。 [2] 如上述[1]之硏磨墊，其中溝的深度和孔的深度係符合下 述式（2 ): (2 ) X- Y ^ 0.1 (式中，X表示爲溝之深度，Y表示爲孔之深度，長 度單位爲mm )。 [3] 如上述[1]或[2]項之硏磨墊，其中溝的深度係符合下述 式（3) ~(5): (3 ) X ^ 0.5 201021972(1) Z > X > Y (wherein X represents the depth of the groove, Y represents the depth of the hole, and Z represents the thickness of the honing layer). [2] The honing pad of the above [1], wherein the depth of the groove and the depth of the hole conform to the following formula (2): (2) X-Y ^ 0.1 (wherein X represents the depth of the groove, Y Expressed as the depth of the hole, the length is in mm). [3] For the honing pad of [1] or [2] above, the depth of the groove is in accordance with the following formula (3) ~ (5): (3) X ^ 0.5 201021972
(4) 0.5〇xZ^X^〇9〇xZ (5) Z — X ^ 0.2 (式中，X表示爲溝之深度，z表示爲硏磨層之厚度， 長度單位爲m m )。 [4] 如上述[1]至[3]項中任—項之硏磨墊，其中孔的深度係 符合下述式（6)〜（8): (6 ) Y ^ 0.2 (7 ) 0.3〇χΖ^ Y^〇.85xZ (8 ) Z- Y^0.4 (式中，Υ表示爲孔之深度，ζ表示爲硏磨層之厚度， 長度單位爲mm)。 [5] 如上述[1]至[4]項中任一項之硏磨墊，其中溝的形狀係 格子狀》 [6] 如上述[1]至[5]項中任一項之硏磨墊，其中開口於硏磨 層的硏磨側表面之溝的總容積（a)，和開口於硏磨層的 硏磨側表面且具有〇.〇5mm2以上的開口部位面積之孔的 總容積（b)之比率（a/b)，係50/50~90/10之範圍內。 [7] 如上述[1]至[6]項中任一項之硏磨墊，其中硏磨層的硏 磨側表面和相對側之面，係積層著緩衝層。 [8] 如上述[1]至[7]項中任一項之硏磨墊，其中硏磨層係無 發泡結構。 [9] ~種半導體晶圓之硏磨方法，其係使用如上述至[8] 項中任一項之硏磨墊。 [10] —種半導體元件之製造方法，其係使用如上述π]至[8] 項中任一項之硏磨墊。 201021972 發明效果 依據本發明可製得一種可得到高硏磨速度，硏磨均勻 性及平坦化性能優異，且具有少發生刻痕等優異的硏磨性 會巨，即使持續長時間的硏磨，硏磨性能的變化小而使用壽 命長之硏磨墊。 【實施方式】 以下，詳細地說明本發明》 本發明之硏磨墊係至少含有硏磨層，且具有開口於此 g 硏磨層的硏磨側表面之溝和開口於此硏磨層的硏磨側表面 之孔。 如先前的硏磨墊般，於硏磨層的硏磨側表面只含有溝 時，例如不具同心圓狀的溝等往硏磨墊外的排出路徑之閉 溝形狀，因硏磨屑的排出性低，易於晶圓表面發生刻痕。 爲抑制刻痕的發生而於低壓高速旋轉之條件進行硏磨時， 墊/晶圓間易於流體潤滑，硏磨速度和硏磨均句性，有降低 之趨勢。另一方面，具有往硏磨墊外的排出路徑之格子狀 & 溝等，因硏磨屑的排出性良好且硏磨漿液亦易於過度排 出，故不易使硏磨漿液均勻且充分地供應至晶圓表面，導 致必須增加硏磨漿液之供應量，結果提高運轉成本。 於硏磨墊的硏磨側表面只形成孔時，與同心圓狀的溝 的情形相同，因硏磨屑的排出性低，而易於晶圓表面發生 刻痕。且因於硏磨表面的硏磨漿液之流動性變差，硏磨漿 液於晶圓表面之供應性降低，硏磨速度或硏磨均勻性亦降 低。 本發明的硏磨墊，係因具有開口於硏磨層的硏磨側表 201021972 面之溝和孔二者，故可取得高硏磨速度、優異的硏磨均勻 性、低刻痕等硏磨性能之良好平衡而得改善。 本發明的硏磨墊，除具有溝和孔二者，以X表示爲溝 之深度，y係孔之深度，z爲硏磨層之厚度時，尙必須符 合下述（1 )。(4) 0.5〇xZ^X^〇9〇xZ (5) Z — X ^ 0.2 (where X is the depth of the groove, z is the thickness of the honing layer, and the length is m m ). [4] The honing pad of any one of the above items [1] to [3], wherein the depth of the hole conforms to the following formula (6) to (8): (6) Y ^ 0.2 (7 ) 0.3 〇 χΖ^ Y^〇.85xZ (8 ) Z- Y^0.4 (where Υ is expressed as the depth of the hole, ζ is the thickness of the honing layer, and the length is in mm). [5] The honing pad according to any one of the above [1] to [4] wherein the shape of the groove is a lattice shape [6] honing as in any one of the above [1] to [5] a pad, wherein a total volume (a) of the groove opening to the honing side surface of the honing layer, and a total volume of the hole opening to the honing side surface of the honing layer and having an opening area of 〇.5 mm 2 or more ( b) The ratio (a/b) is in the range of 50/50 to 90/10. [7] The honing pad according to any one of the above [1] to [6] wherein the honing side surface and the opposite side surface of the honing layer are laminated with a buffer layer. [8] The honing pad according to any one of the above [1] to [7] wherein the honing layer is a non-foamed structure. [9] A honing method for a semiconductor wafer, which uses the honing pad according to any one of the above [8]. [10] A method of producing a semiconductor device using the honing pad according to any one of the above items π] to [8]. 201021972 Effect of the Invention According to the present invention, it is possible to obtain a high honing speed, excellent honing uniformity and flattening performance, and excellent honing property such as occurrence of less scoring, even if the honing is continued for a long time. A honing pad with a small change in honing performance and a long service life. [Embodiment] Hereinafter, the honing pad of the present invention contains at least a honing layer, and has a groove opening to the honing side surface of the honing layer and a 开口 opening to the honing layer. Grind the holes in the side surface. As in the case of the prior art honing pad, when the honing side surface of the honing layer contains only the groove, for example, the shape of the closed groove of the discharge path outside the honing pad, such as a groove having no concentric shape, due to the discharge of the swarf Low, easy to scratch the surface of the wafer. In order to suppress the occurrence of nicks and honing under the conditions of low-pressure and high-speed rotation, the pad/wafer is easy to be fluidly lubricated, and the honing speed and the honing rate are all reduced. On the other hand, in the lattice shape and the groove having the discharge path to the outside of the honing pad, since the discharge property of the honing chips is good and the honing slurry is easily discharged excessively, it is difficult to uniformly and sufficiently supply the honing slurry to the sinter slurry. The wafer surface causes the supply of honing slurry to be increased, resulting in increased operating costs. When only the hole is formed on the honing side surface of the honing pad, as in the case of the concentric groove, the squeegee discharge is low and the surface of the wafer is easily scored. Further, since the fluidity of the honing slurry on the honing surface is deteriorated, the supply of the honing slurry to the surface of the wafer is lowered, and the honing speed or the honing uniformity is also lowered. The honing pad of the present invention has both a groove and a hole which are opened on the honing side surface of the honing layer 201021972, so that high honing speed, excellent honing uniformity, low nicking and the like can be obtained. A good balance of performance is improved. The honing pad of the present invention, in addition to having both grooves and holes, is represented by X as the depth of the groove, the depth of the y-type hole, and z is the thickness of the honing layer, and 尙 must conform to the following (1).
(1 ) Z > X > Y (式中，X表示爲溝之深度，Y表示爲孔之深度，z表示爲 硏磨層之厚度。） 本發明者們經過探討而了解，先前具有貫通孔之硏磨 墊，於硏磨中，因硏磨漿液係到達硏磨墊內面的黏附層， 其黏附力於硏磨中發生變化而導致硏磨性能降低。本發明 的硏磨墊係因不形成貫通硏磨側表面與相對側之部位，不 具貫通孔而抑制硏磨中硏磨性能之降低。 本發明說明書中，溝係指連續的開口部位之相離最遠 的2點之距離（A)爲5 mm以上，且[開口部位之面積/直 徑A之圓面積]爲0.4以下之開口部位，而孔係指上述溝以 外之開口部位。又，本發明說明書中，溝的深度係指從硏 磨側表面（平面）至溝的最深部位之距離，孔的深度係指 從硏磨側表面（平面）至孔的最深部位之距離。 本發明的硏磨墊，其中溝的深度必須比孔的深度更大》 孔的深度比溝的深度更深時，有硏磨屑堆積於孔之趨 勢，堆積的硏磨屑係於硏磨中而突出於硏磨表面，因而發 生刻痕。貫通孔（Z=Y>X時）係於硏磨中，硏磨漿液到 達硏磨層的內面之黏附層，而使黏附力發生變化，易引起 硏磨性能之經時變化而造成問題。 201021972 若硏磨層係由硬質的材料所形成之無發泡結構時，因 比發泡樹脂更難加工，形成貫通孔時，於貫通孔的周圍， 易發生凹部或變形》即使非貫通孔，使孔底部的硏磨層之 厚度變薄來形成深的孔，藉由切削加工等而形成孔時，於 孔的部位，硏磨層的內側易於膨脹，於硏磨層發生厚度不 均，易使硏磨均勻性及平坦化性能之任一者皆降低。藉由 切削加工而形成溝及孔時，通常，比起溝的部位’於孔的 部位的硏磨層之內側更易變形’因此孔的深度必須比溝的 g 深度更小。 又，從兼具硏磨墊的使用壽命和優異的硏磨性能之觀 點，宜爲溝的深度與孔的深度係符合下述式（2)之硏磨塾。 (2 ) X - Y1 (式中，X表示爲溝之深度’ Y表示爲孔之深度’長度單 位爲mm。） 亦即，上述溝的深度與上述孔的深度之差’宜爲〇_lmm以 上，尤宜0.15mm以上。且溝的深度與孔的深度之差’宜 爲0.5mm以下’更宜爲〇.4mm以下，尤宜0.3mm以下。 更進一步，本發明的硏磨墊中，溝的深度與硏磨層之 厚度宜符合下述式（3)〜（5)。 (3 ) X ^ 0.5 (4) 0.5〇χΖ^Χ^ 0.9〇χΖ (5 ) Ζ- Χέ 〇·2 (式中，χ表示爲溝之深度，Ζ表示爲硏磨層之厚度’長 度單位爲mm。） 符合上述式（3)時’亦即藉著使溝的深度爲〇.5mm -10 - 201021972 以上，可抑制因硏磨墊的磨損而發生的硏磨性能之變化， 可延長硏磨墊之使用壽命。上述溝的深度更宜爲〇.55mm 以上，尤宜〇.6mm以上。 符合上述式（4)之關係時，亦即溝的深度爲硏磨層的 厚度之50-90%時，緩衝層積層於下層時，兼具硏磨均勻 性和平坦化性能，因而較適用。溝的深度係低於硏磨層的 厚度之50%時，不僅硏磨均勻性易降低，且硏磨墊之使用 壽命變短。相反地，溝的深度係大於硏磨層的厚度之90% P 時，平坦化性能有降低之趨勢。上述溝的深度，尤宜爲硏 磨層的厚度之55〜85%。 符合上述式（5)之關係時，亦即硏磨層的厚度與溝的 深度之差爲〇.2mm以上時，可確保溝底部的硏磨層係有相 當程度之厚度，即使緩衝層積層於下層時，亦抑制硏磨層 過度地變形，易於確保平坦化性能。上述硏磨層的厚度與 溝的深度之差，尤宜爲〇.25mm以上。 本發明的硏磨墊，其孔的深度宜符合下述式（6) ~( 8)。 _ ( 6) Υ2〇·2 (7 ) 0.3〇xZ^ Y^0.85xZ (8 ) Z- 0.4 (式中，Υ表示爲孔之深度，ζ表示爲硏磨層之厚度，長 度單位爲mm。） 符合上述式（6)，亦即藉著使孔的深度爲0.2 mm以上， 可抑制因硏磨墊的磨損而發生的硏磨性能之變化，而延長 硏磨墊之使用壽命。上述孔的深度，更宜爲〇.3mm以上， 尤宜0.4mm以上。 -11- 201021972 從兼具硏磨墊的使用壽命和硏磨均勻性、平坦化性能 之觀點，符合上述式（7)的關係式，亦即孔的深度宜爲硏 磨層的厚度之30〜85%，孔的深度若不及硏磨層的厚度之 30%，有硏磨墊的的使用壽命變短之趨勢。相反地，孔的 深度大於硏磨層的厚度之85%時，來自孔的硏磨屑之排出 性降低，硏磨墊磨損之同時，堆積於孔的硏磨屑再度釋出 而於晶圓表面發生刻痕。上述孔的深度尤宜硏磨層的厚度 之35〜80%。 p 藉由切削加工等來形成孔時，孔底部的硏磨層的內側 膨脹，使硏磨層發生厚度不齊而降低硏磨均勻性及平坦化 性能，從抑制上述現象之觀點，符合上述式（8 )的關係式， 亦即硏磨層的厚度與孔的深度之差宜爲〇.4mm以上，上述 硏磨層的厚度與孔的深度之差，尤宜0.45 mm以上。 開口於硏磨層的硏磨側表面的溝之形狀（圖形），係格 子狀、同心圓狀、輻射狀、六角形狀、三角形狀或其組合 等，係可採用既知者，惟從易將硏磨屑排至硏磨墊外，且 g 抑制晶圓表面發生刻痕的能力高之觀點，宜爲格子狀溝。 溝的切面形狀，宜爲長方形，係因即使硏磨墊磨損而 溝寬度亦不變化，硏磨性能不易改變。 上述溝的寬度宜爲〇.1 ~5mm之範圍內，係因硏磨屑的 排出性和硏磨漿液的維持性之平衡優異。若溝的寬度小於 0.1mm，硏磨屑的排出性降低且於晶圓表面易發生刻痕。 另一方面，若溝的寬度大於5mm，易過度地將硏磨漿液排 至硏磨墊外，不易均勻且充分地將硏磨漿液供應至晶圓表 面。其結果，必須增加硏磨漿液的供應量而提高運轉成本。 -12- 201021972 上述溝的寬度更宜爲〇.15〜4mm之範圍內，尤宜0.2〜3mm 之範圍內。 上述溝的間距宜爲1~2 0 mm之範圍內，係因可均勻且 充分地將硏磨漿液供應至晶圓表面，且形成硏磨速度或硏 磨均勻性更優異之硏磨墊。上述溝的間距更宜爲2〜18 mm 之範圍內，尤宜3~16mm之範圍內。 開口於硏磨墊的硏磨側表面之孔的形狀係無特別之限 制，於硏磨層的硏磨側表面的開口部位之形狀，可爲圓、 三角形、四角形、六角形等任一種。相對於硏磨層的硏磨 側表面，垂直地切斷時所呈現的上述孔之切面形狀，可爲 長方形、梯形、三角形等任一種。其中，從易於孔的加工 且即使硏磨墊磨損，開口部位的孔之面積亦不改變，硏磨 性能不易變化之觀點，宜爲如圓柱狀的孔等位於硏磨層的 硏磨側表面之開口部位的形狀爲圓形，且相對於硏磨層的 硏磨側表面，垂直地切斷時所呈現的切面形狀爲長方形之 孔。 形成於硏磨墊的硏磨側表面之上述孔的分布係無特別 之限制，上述孔宜同樣地分布於此硏磨側表面，例如，溝 爲格子狀時，每個格子分別形成1個或複數個孔。 上述孔的位於硏磨層的硏磨側表面的開口部位之面 積，從均勻且充分地將硏磨漿液供應至晶圓表面且易於孔 的加工之觀點，每1個孔爲〇.〇5mm2以上，宜爲0.1 ~2 0 mm2 的範圍，更宜爲0.3〜15mm2的範圍，尤宜0.5〜12mm2的範 圍。 開口於硏磨層的硏磨側表面之各個孔，可爲全爲具有 -13- 201021972 相互爲相同的開口部位之形狀、切面形狀及開口部位的面 積，亦可爲其中一部分或全部爲相互相異者。 開口於硏磨層的硏磨側表面的溝之總容積（a)與開口 於硏磨層的硏磨側表面的上述孔之總容積（b)之比率 (a/b)，宜爲50/5 0~90/10之範圍內，係因硏磨漿液的維持 性或於晶圓表面的均勻之供應性和硏磨屑的排出性之平衡 特別優異。若比率（a/b)小於50/50，則硏磨漿液於晶圓 表面的均勻之供應性和硏磨屑之排出性降低，且硏磨速度 g 或硏磨均勻性降低，於晶圓表面易於發生刻痕。另一方面， 若比率（a/b)大於90/10，則硏磨漿液之維持性降低，且 硏磨速度或硏磨均勻性易於降低。比率（a/b)更宜爲 5 5/45~88/12之範圍內，尤宜60/40~86/14之範圍內。 硏磨層之厚度，從硏磨性能和作業性之觀點，宜爲 0.7~1.6mm之範圍，更宜爲 0.75〜1.5mm之範圍，尤宜 0.8~1.4mm之範圍。若硏磨層之厚度小於0.7mm，則影響 硏磨裝置的定盤之硬度，且將緩衝層積層於下層時，其緩 0 衝層之硬度亦受影響，隨著硏磨層的磨損而使硏磨性能不 安定。另一方面，若硏磨層的厚度大於1.6mm，因硏磨墊 的彎曲剛性變大，即使緩衝層積層於下層，硏磨層不易變 形，硏磨均勻性因而降低。 本發明的硏磨墊，係提高硏磨層的硬度而具有優異的 平坦化性能，從藉由不具有露出於溝或孔的側面之氣孔’ 使晶圓表面不因硏磨漿液中的磨石粒凝聚、黏合於氣孔中 而發生刻痕之觀點，硏磨層宜爲無發泡結構。 硏磨層的D硬度，從提升平坦化性能和抑制晶圓表面 -14- 201021972 發生刻痕之觀點，宜爲5 0~80的範圍內， 範圍內，尤宜56〜74之範圍內。藉由測定 料之D硬度，可將其視爲硏磨層之D硬度 構成本發明的硏磨墊的硏磨層之材$ 制，可使用單獨1種或倂用2種以上的既 高分子。使用爲硏磨層的材料之高分子， 丙烯、聚丁二嫌、乙烯-醋酸乙酯共聚物 苯乙烯、聚氯乙烯、丙烯酸樹脂、環氧樹沿 聚酯、聚醯胺等。其中，從形成平坦化性 面不易發生刻痕等硏磨性能特別優異之硏 爲聚胺甲酸酯，尤宜使高分子二醇、有機 伸長劑反應而得之熱塑性聚胺甲酸酯。 上述高分子二醇例如聚乙二醇、聚四 醇；聚（己二酸亞壬基酯）二醇、聚（2-辛基己二酸酯）二醇、聚（2—甲基一】 —亞壬基己二酸酯）二醇、聚（己二酸亞 聚酯二醇；聚（碳酸亞己基酯）二醇、聚 2,2-二甲基一1，3—丙基碳酸酯）二醇 等。此類高分子二醇係可單獨使用1種或 上述有機二異氰酸酯，係可使用先前 製造之任一種有機二異氰酸酯，例如二異 異佛爾酮二異氰酸酯、二環己基甲烷一 4，4 脂肪族或脂環族二異氰酸酯；二苯甲烷-酯、2,4 —二異氰酸甲苯酯、2,6_二異氰 二異氰酸萘酯等芳香族二異氰酸酯等。此 更宜爲53〜77的 構成硏磨層的材 〇 畔係無特別之限 知之合成或天然 例如聚乙烯、聚 、丁醛樹脂、聚 i、聚胺甲酸酯、 能優異且晶圓表 磨墊之觀點，宜 二異氰酸酯及鏈 甲二醇等聚醚二 -甲基一 1，8—亞 .，8 -亞辛基—co :戊基酯）二醇等 (亞己基—co -等聚碳酸酯二醇 倂用2種以上。 用於聚胺甲酸酯 氰酸亞己基酯、 ’一二異氰酸酯等 • 4,4’ _二異氰酸 酸甲苯酯、1，5 — 類有機二異氰酸 -15- 201021972 酯，係可單獨使用1種或倂用2種以上。其中，從製得的 硏磨墊的耐磨損性等觀點，宜爲二苯甲烷一 4,4，-二異氨 酸酯。 上述鏈伸長劑，係可使用先前用於聚胺甲酸醋製造之 任一種鏈伸長劑。鏈伸長劑，宜使用分子中含有2個以上 的與異氰酸酯基反應而得的活性氫原子之分子量35〇以· 之低分子化合物，例如乙二醇、二乙二醇、1，2 —丙二醇、 1，3_ 丙二醇、1，2 — 丁 二醇、1,3 — 丁 二醇、2,3 — 丁 二醇、 1，4 一丁二醇、1,5 —戊二醇、新戊二醇、1，6 —己二醇、3 —甲基一 1，5—戊二醇、1，4 一双（β —羥乙氧基）苯、U4 —環己二醇、環己烷二甲醇（1，4 —環己烷二甲醇等）、双 (β —羥乙基）對苯二甲酸酯、1，9一壬二醇、螺二醇等二 醇類；乙二胺、丙二胺、丁二胺、己二胺、辛二胺、壬二 胺、聯胺、二甲苯二胺、異佛爾酮二胺、哌畊、鄰—苯二 胺、間-苯二胺、對一苯二胺、己二酸二醯肼、間苯二甲 酸二醯肼' 4,4’ -二胺二苯甲烷、4,4’_二胺二苯醚等二胺 類等。此類鏈伸長劑係可單獨使用1種，或倂用2種以上。 其中，宜爲1,4一丁二醇及/或1,4_環己烷二甲醇。 上述熱塑性聚胺甲酸酯係可使用上述高分子二醇、有 機二異氰酸酯及鏈伸長劑作爲原料，以預聚合物法或一步 發泡法等既知的方法而製造，惟實際上宜在溶劑不存在 下，將上述高分子二醇、有機二異氰酸酯及鏈伸長劑依規 定比率來熔融混煉而製得，尤宜使用多軸螺旋型擠壓機， 以連續熔融聚合之方法來製造。各成分的使用比率係考量 耐磨損性等、由熱塑性聚胺甲酸酯而成的硏磨層該具備的 -16 * 201021972 物性等而適當地選擇，宜以相對於高分子二醇及鏈伸長劑 所含之活性氫原子1莫耳，有機二異氰酸酯所含的異氰酸 酯基爲0.95-1.3莫耳之比例而使用各成分。若上述比例低 於0.95莫耳，製得的由熱塑性聚胺甲酸酯而成的硏磨層之 機械性強度及耐磨損性降低，若超過1 · 3莫耳，則熱塑性 聚胺甲酸酯的生產性或保存安定性降低。從製得的硏磨層 之機械性強度或耐磨損性及熱塑性聚胺甲酸酯的生產性或 保存安定性之觀點，更宜以相對於高分子二醇及鏈伸長劑 g 所含之活性氫原子1莫耳，有機二異氰酸酯所含的異氰酸 酯基爲 0.9 6~ 1.1莫耳之比例而使用各成分，尤宜以 0.97~1.05莫耳之比例而使用各成分。 硏磨層亦可僅由上述高分子而形成，惟在製得的硏磨 墊可發揮本發明的效果之範圍內，亦可含有上述高分子以 外之其他成分。此類其他成分例如交聯劑、塡充劑、交聯 促進劑、交聯輔助劑、軟化劑、增黏劑、抗老化劑、發泡 劑、加工輔助劑、密合增強劑、結晶核劑、耐熱安定劑、 g 耐候安定劑、抗靜電劑、著色劑、潤滑劑、難燃劑、難燃 輔助劑（氧化銻等）、抗白化劑、脫模劑、增稠劑、抗氧化 劑、導電劑等。硏磨層中，上述其他成分之含量宜低於50 質量％，更宜低於20質量％，尤宜低於5質量％。 硏磨層之製造方法’係無特別之限制，製造一種由上 述1種類或2種類以上的高分子、或高分子組成物、或依 需求配合上述其他成分之髙分子組成物而成之薄片，再由 此薄片可製得硏磨層。此薄片係藉由擠壓機將上述高分子 或高分子組成物擠壓而製造，具體而言，例如可採用一種 -17- 201021972 使用裝設有T模頭的擠壓機而將上述高分子或高分子組成 物熔融擠壓之方法。擠壓機係可使用單軸擠壓機、二軸擠 壓機等。上述薄片係預先製造由上述高分子或高分子組成 物形成之塊狀物，再將其切片而製造。 製得的薄片係可依需求，以剪裁、打洞、切削等加工 成預期之尺寸、形狀’以磨削等加工成預期之厚度而做成 硏磨層。 開口於硏磨層的硏磨側表面的溝之形成方法，無特別 Φ 之限制。具體而言，例如以切削加工使上述薄片形成溝之 方法；使已加熱的模具或金屬線接觸於上述薄片，並照射 雷射光等光線，使其一部分被熔解或分解、揮發而形成溝 之方法；使用具有爲形成溝的凸部位之模具，將上述高分 子或高分子組成物之熔融物注入於其中後使之固化，或注 入未硬化的高分子原料後使之硬化等，預先形成溝的薄片 之製造方法等。 開口於硏磨層的硏磨側表面的孔之形成方法，無特別 Φ 之限制。具體而言，例如使用鑽頭等機械手段，使上述薄 片進行切削加工而形成之方法；使已加熱的模具或金屬線 接觸於上述薄片，並照射雷射光等光線，使其一部分被熔 解或分解、揮發而形成孔之方法等。其中，宜爲以切削加 工而形成之方法，係因加工精度佳且構成硏磨層的材料不 易因熱而引起劣化之故。 本發明的硏磨墊可爲僅由上述於硏磨側表面具有溝及 孔的硏磨層所形成之單層結構，惟爲提升晶圓面內的硏磨 均勻性，宜於硏磨層的硏磨側表面和相對側的面，積層緩 -18 - 201021972 衝層。緩衝層之積層，係可使用既知的膠黏劑或黏合劑來 進行。緩衝層的A硬度宜爲3 0〜9 0。緩衝層之材料係無特 別之限制，例如可使用無發泡結構或發泡結構之彈性體， 或將樹脂含浸於不織布者。 本發明的硏磨墊，係可使用於既知的硏磨漿液，及化 學機械的硏磨。硏磨漿液係含有例如水或油等液狀介質； 二氧化矽、氧化鋁、氧化鋪、氧化鍩、碳化矽等硏磨劑； 鹼、酸、氧化劑、界面活性劑、螯合劑等成分。進行化學 機械硏磨時，可依需求，與硏磨漿液同時地倂用潤滑油、 冷卻劑等。 化學機械的硏磨，係可使用既知的化學機械硏磨用裝 置，隔著硏磨漿液，於加壓下，以一定速度，使被硏磨面 與硏磨墊接觸一定的時間而進行。於硏磨前或硏磨中，宜 使用鑽石打磨機等打磨機來調整硏磨墊。硏磨的對象物品 係無特別之限制，例如水晶、矽、玻璃、光學基板、電子 電路基板、多層配線基板、硬碟、半導體晶圓等，惟本發 明的硏磨墊可適用於硏磨半導體晶圓之用途。特別是使硏 磨時與硏磨墊的相對速度易於變快，且因大面積而不易控 制硏磨性能之具有6英吋以上，尤其是8英吋以上直徑之 半導體晶圓進行硏磨時，因本發明的硏磨墊具有優異的硏 磨性能且具有長使用壽命，故此硏磨墊尤宜用於硏磨此類 半導體晶圓之用途。 實施例 以下，以實施例更具體地說明本發明，惟本發明不受 限於此類實施例。又各評價係依據下述之方法而進行。 -19- 201021972 [材料之D硬度] 依據JIS K 7 311，於測定溫度25°C之條件下測定。 [硏磨性能] 將硏磨墊裝設於 Applied Materials公司製硏磨裝置 「MIRRA」，使用三菱Material公司製鑽石打磨機（鑽石號 碼# 20 0 )，邊以200mL/分的速度流動蒸餾水，邊以打磨機 旋轉數lOOrpm、壓台速度旋轉數5 0rpm，將硏磨墊表面磨 削（以下稱爲「調理」）3 0分鐘。 @ 其次，於打磨機旋轉數 lOOrpm、壓台速度旋轉數 8〇rpm、磁頭旋轉數79rpm、硏磨壓力24kPa之條件，以離 子交換水將昭和電工股份公司製漿液「GPL - C1010」稀釋 成1〇倍之液，以200mL/分之速度來供應此稀釋液’將表 面具有膜厚度爲l〇〇〇nm且無圖形的PETEOS(等離子體促 進四乙基羥基矽烷）膜之直徑8英吋之矽晶圓邊調理邊硏 磨，共60秒》之後，交換晶圓，重複再次硏磨及調理，硏 磨共9片之晶圓。其次，將1片的表面具有含凸部位寬度 _ ΙΟΟμιη、凹部位寬度ΙΟΟμιη、間距200μηι、凸部位的氧化膜 厚度600nm、凸部位與凹部位的初期段差500nm的圖形的 HDP (高密度等離子體）氧化膜之直徑8英吋之矽晶圓， 以和上述硏磨條件相同的條件來進行60秒硏磨。 其次，爲探討墊磨損後的硏磨性能，僅進行調理約25 小時（相當於硏磨1 500片晶圓之調理時間）後’再次以和 上述硏磨條件相同之條件，硏磨9片的表面具有無圖形的 PETEOS膜之直徑8英吋之矽晶圓，其次，將1片的表面 具有圖形的HDP氧化膜之直徑8英吋之矽晶圓，以和上述 -20- 201021972 硏磨條件相同的條件而硏磨。 已硏磨的共20片的晶圓中’第8片和第18片所硏磨 的在表面具有PETEOS膜之晶圓，於晶圓面內，測定硏磨 前及硏磨後的PETEOS膜之膜厚度，各49點’求出各點的 硏磨速度。以49點的硏磨速度之平均値作爲硏磨速度 (R)，硏磨均勻性係藉由下式（7)所得的不均勻性而評價。 不均勻性之値愈小，晶圓面內的PETEOS膜被均勻地硏磨 之硏磨均勻性優異。 不均勻性（％) = (a/R)xl〇〇 ( 7 ) (惟，σ:表示爲49點的硏磨速度之標準偏差，R:表示爲 49點的硏磨速度之平均値。） 又，第9片和第19片所硏磨的在表面具有PETEOS膜 之晶圓，係使用Applied Materials公司製的缺陷檢查裝置 「ComPLUS」，測定尺寸爲0.2μιη以上之缺陷數。 第10片和第20片所硏磨的具有含圖形的HDP氧化膜 之晶圓，從晶圓中心部位的凸部位及凹部位的氧化膜膜厚 度之變化量，求出各個硏磨速度。凸部位的硏磨速度愈大 而凹都位的硏磨速度愈小，晶圓表面的平坦化係於短時間 且以更少的硏磨量而達成，故較適當。 [製造例1] 熱塑性聚胺甲酸酯之製造 將數平均分子量2000的聚丁二醇[簡稱：PTMG]、數 平均分子量2000的聚（2 -甲基-1,8 —亞辛基—co —亞壬 基己二酸酯）二醇[簡稱：ΡΝΟΑ;亞壬基單位和2—甲基 _1，8_亞辛基單位之莫耳比=7比3]、1，4_環己烷二甲醇 -21- 201021972 [簡稱：CHDM]、1，4 一 丁二醇[簡稱：BD]、及二苯甲烷一 4,4’—二異氰酸酯[簡稱：MDI]以 PTMG: PNOA: CHDM: BD: MDI 之質量比爲 24.5: 10.5: 5_0: 12.5: 47.5 之比例 而使用，藉由定量泵以同軸旋轉的2軸擠壓機而連續地供 應，進行連續熔融聚合而製造熱塑性聚胺甲酸酯。將生成 的熱塑性聚胺甲酸酯之熔融物連續地擠壓於水中成絲束狀 後，以造粒機細切而得顆粒。使此顆粒於7〇 °C進行20小時 除濕乾燥而製造熱塑性聚胺甲酸酯。 p [實施例1] 將製造例1所製得的熱塑性聚胺甲酸酯放入單軸擠壓 成形機，以T模頭擠壓而形成厚度2mm之薄片後’將製得 的薄片之表面硏削而形成厚度〇.9mm之均勻薄片。此薄片 的D硬度爲63。其次，將此薄片切出直徑51 cm的圓形狀， 於其一面的表面，形成溝寬度1.0mm、溝深度0.65 mm、溝 間距（縱及橫的間距）7.0mm之格子狀的溝（切面形狀爲 長方形），更使用鑽頭藉由切削加工，於格子狀溝的各格子 g 中央，形成直徑2.5 mm、深度0.45 mm的孔。其次，於形成 溝及孔之表面及相對側之面，以黏合膠帶來黏貼厚度 1 .0mm的發泡聚胺甲酸酯薄片（A硬度48)，而製作積層結 構之硏磨墊。製得的硏磨墊的硏磨層之構成，係如以下第 1表所示》 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，硏磨速度、硏磨均勻性及平坦化性能優異，缺陷 數亦少，且長時間使用時的硏磨性能之變化亦小。 [實施例2] -22- 201021972 和實施例1相同作法，製得厚度1.3 mm、直徑51cm的 圓形狀薄片後，於其一面的表面，形成溝寬度〇.5mm、溝 深度0.9mm、溝間距（縱及橫的間距）4.0mm之格子狀的 溝（切面形狀爲長方形），更使用鑽頭藉由切削加工，於格 子狀溝的各格子中央，形成直徑1.5mm、深度0.75mm的 孔。其次，於形成溝及孔之表面及相對側之面，以黏合膠 帶來黏貼厚度1.0 mm的發泡聚胺甲酸酯薄片（A硬度48)’ 而製作積層結構之硏磨墊。製得的硏磨墊的硏磨層之構 I 成，係如以下第1表所示。 ❿ 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，硏磨速度、硏磨均勻性及平坦化性能優異，缺陷 數亦少，且長時間使用時的硏磨性能之變化亦小。 [實施例3] 和實施例1相同作法，製得厚度1 . 1 mm、直徑5 1 cm的 圓形狀薄片後，於其一面的表面，形成溝寬度1.0mm、溝 深度0.8 mm、溝間距（縱及橫的間距）12.0mm之格子狀的 Φ 溝（切面形狀爲長方形），更使用鑽頭藉由切削加工，於格 子狀溝的每個格子，連結格子中央與四角的線分之中間點 4處所及格子中央共5處所，形成直徑2.0mm、深度0.6mm 的孔。其次，於形成溝及孔之表面及相對側之面，以黏合 膠帶來黏貼厚度1.0mm的發泡聚胺甲酸酯薄片（A硬度 48)，而製作積層結構之硏磨墊。製得的硏磨墊的硏磨層之 構成，係如以下第1表所示。 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，硏磨速度、硏磨均勻性及平坦化性能優異，缺陷 -23- 201021972 數亦少’且長時間使用時的硏磨性能之變化亦小。 [比較例1 ] 於實施例1中，除孔的深度爲0.6 5mm之外，和實施 例1同樣地製作積層結構之硏磨墊。製得的硏磨墊的硏磨 層之構成，係如以下第1表所示。 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，硏磨速度、硏磨均勻性及平坦化性能差。 [比較例2 ] g 於實施例1中，除溝的深度爲0.4 5 mm之外，和實施 例1同樣地製作積層結構之硏磨墊。製得的硏磨墊的硏磨 層之構成，係如以下第1表所示。 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，初期的硏磨速度、硏磨均勻性及平坦化性能優異， 缺陷數亦少，而長時間使用時，硏磨速度及硏磨均勻性則 降低，且缺陷數亦多，硏磨性能之安定性不足。 [比較例3] $ 於實施例2中，除將孔作成貫通孔（深度爲1.3mm) 之外，和實施例2同樣地製作積層結構之硏磨墊。製得的 硏磨墊的硏磨層之構成，係如以下第1表所示》 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，初期的硏磨速度、硏磨均勻性及平坦化性能優異， 缺陷數亦少，而長時間使用時，硏磨速度及硏磨均勻性則 降低，硏磨性能之安定性不足。 [比較例4 ] 於實施例2中，除不形成孔之外，和實施例2同樣地 -24- 201021972 製作積層結構之硏磨墊。製得的硏磨墊的硏磨層之構成’ 係如以下第1表所示。 藉由上述方法而評價硏磨性能之結果’如以下第2表 所示般，硏磨速度及硏磨均勻性差’缺陷數亦稍微變多。 [比較例5] 於實施例3中，除溝的寬度爲〇.5mm、溝的深度爲 0.3mm、孔的深度爲〇.3mm之外，和實施例3同樣地製作 積層結構之硏磨墊。製得的硏磨墊的硏磨層之構成’係如 以下第1表所示。 藉由上述方法而評價硏磨性能之結果，如以下第2表 所示般，硏磨速度及硏磨均勻性差，缺陷數亦變多。且長 時間使用時的硏磨速度及硏磨均勻性之變化亦大，硏磨性 能之安定性不足。 ❹ -25- 201021972 【第1表】(1) Z > X > Y (wherein X is the depth of the groove, Y is the depth of the hole, and z is the thickness of the honing layer.) The inventors have learned through the discussion and have previously The honing pad of the hole, in the honing, because the mash slurry reaches the adhesive layer on the inner surface of the honing pad, the adhesion force changes in the honing and the honing performance is lowered. The honing pad of the present invention does not have a portion that penetrates the honing side surface and the opposite side, and does not have a through hole to suppress a reduction in honing performance in honing. In the specification of the present invention, the groove means that the distance (A) at which the continuous opening portion is farthest from the two points is 5 mm or more, and [the area of the opening portion/the area of the diameter A of the diameter A] is an opening portion of 0.4 or less. The hole refers to an opening other than the above groove. Further, in the specification of the present invention, the depth of the groove means the distance from the honing side surface (plane) to the deepest portion of the groove, and the depth of the hole means the distance from the honing side surface (plane) to the deepest portion of the hole. The honing pad of the present invention, wherein the depth of the groove must be greater than the depth of the hole. When the depth of the hole is deeper than the depth of the groove, there is a tendency for the swarf debris to accumulate in the hole, and the accumulated tamping is tied to the honing. Prominent in the honing surface, thus causing nicks. The through-hole (Z=Y>X) is in the honing process, and the honing slurry reaches the adhesion layer on the inner surface of the honing layer, and the adhesion force changes, which easily causes problems with the honing performance over time. 201021972 If the honing layer is a non-foamed structure formed of a hard material, it is more difficult to machine than a foamed resin, and when a through hole is formed, a concave portion or deformation is likely to occur around the through hole. Even if it is not a through hole, When the thickness of the honing layer at the bottom of the hole is made thin to form a deep hole, when the hole is formed by cutting or the like, the inner side of the honing layer is easily expanded at the portion of the hole, and the thickness of the honing layer is uneven. Any of honing uniformity and flattening performance is reduced. When grooves and holes are formed by cutting, generally, the portion of the groove is more easily deformed inside the honing layer at the portion of the hole. Therefore, the depth of the hole must be smaller than the depth of the groove g. Further, from the viewpoint of the service life of the honing pad and the excellent honing performance, the depth of the groove and the depth of the hole are preferably in accordance with the following formula (2). (2) X - Y1 (wherein X is the depth of the groove 'Y is the depth of the hole' and the length unit is mm.) That is, the difference between the depth of the groove and the depth of the hole is preferably 〇_1mm The above is particularly preferably 0.15 mm or more. Further, the difference between the depth of the groove and the depth of the hole is preferably 0.5 mm or less, more preferably 〇.4 mm or less, and particularly preferably 0.3 mm or less. Further, in the honing pad of the present invention, the depth of the groove and the thickness of the honing layer are preferably in accordance with the following formulas (3) to (5). (3) X ^ 0.5 (4) 0.5〇χΖ^Χ^ 0.9〇χΖ (5 ) Ζ- Χέ 〇·2 (where χ is expressed as the depth of the groove, Ζ is expressed as the thickness of the honing layer' Mm.) When the above formula (3) is satisfied, that is, by making the depth of the groove 〇.5mm -10 - 201021972 or more, the variation of the honing performance due to the wear of the honing pad can be suppressed, and the honing can be extended. The life of the mat. The depth of the above groove is more preferably 〇.55 mm or more, and particularly preferably 6. 6 mm or more. When the relationship of the above formula (4) is satisfied, that is, when the depth of the groove is 50-90% of the thickness of the honing layer, the buffer layer is more suitable for honing uniformity and flattening performance when it is laminated on the lower layer. When the depth of the groove is less than 50% of the thickness of the honing layer, not only the honing uniformity is liable to be lowered, but also the service life of the honing pad is shortened. Conversely, when the depth of the groove is greater than 90% of the thickness of the honing layer, the flattening performance tends to decrease. The depth of the groove is particularly preferably 55 to 85% of the thickness of the honing layer. When the relationship of the above formula (5) is satisfied, that is, when the difference between the thickness of the honing layer and the depth of the groove is 〇. 2 mm or more, the honing layer at the bottom of the groove is ensured to have a considerable thickness even if the buffer layer is laminated. In the lower layer, the honing layer is also suppressed from being excessively deformed, and the flattening performance is easily ensured. The difference between the thickness of the honing layer and the depth of the groove is particularly preferably 〇25 mm or more. In the honing pad of the present invention, the depth of the hole should preferably conform to the following formulas (6) to (8). _ ( 6) Υ 2 〇 · 2 (7 ) 0.3〇xZ^ Y^0.85xZ (8 ) Z- 0.4 (where Υ is expressed as the depth of the hole, ζ is expressed as the thickness of the honing layer, and the length is in mm. According to the above formula (6), that is, by making the depth of the hole 0.2 mm or more, the variation of the honing performance due to the wear of the honing pad can be suppressed, and the service life of the honing pad can be prolonged. The depth of the above hole is more preferably 〇3 mm or more, and particularly preferably 0.4 mm or more. -11- 201021972 From the viewpoint of the service life of the honing pad and the honing uniformity and flattening performance, the relationship of the above formula (7) is satisfied, that is, the depth of the hole is preferably the thickness of the honing layer 30~ 85%, if the depth of the hole is less than 30% of the thickness of the honing layer, the service life of the honing pad becomes shorter. Conversely, when the depth of the hole is greater than 85% of the thickness of the honing layer, the discharge of the honing chips from the hole is reduced, and the honing pad is worn out while the honing pad is released again on the wafer surface. A score has occurred. The depth of the above holes is particularly preferably 35 to 80% of the thickness of the honing layer. p When the hole is formed by cutting or the like, the inside of the honing layer at the bottom of the hole is expanded, and the thickness of the honing layer is uneven, and the honing uniformity and the flattening performance are lowered. From the viewpoint of suppressing the above phenomenon, the above formula is satisfied. The relationship of (8), that is, the difference between the thickness of the honing layer and the depth of the hole is preferably 〇. 4 mm or more, and the difference between the thickness of the honing layer and the depth of the hole is particularly preferably 0.45 mm or more. The shape (pattern) of the groove which is opened on the honing side surface of the honing layer is a lattice shape, a concentric shape, a radial shape, a hexagonal shape, a triangular shape or a combination thereof, and the like can be used, but it is easy to use. The viewpoint that the wear debris is discharged outside the honing pad and g has a high ability to suppress the occurrence of nicks on the surface of the wafer is preferably a lattice groove. The shape of the cut surface of the groove should be rectangular, because the width of the groove does not change even if the honing pad is worn, and the honing performance is not easily changed. The width of the above-mentioned groove is preferably in the range of 〇.1 to 5 mm, which is excellent in the balance between the discharge property of the honing dust and the maintenance of the honing slurry. If the width of the groove is less than 0.1 mm, the discharge of the honing chips is lowered and the surface of the wafer is liable to be scored. On the other hand, if the width of the groove is larger than 5 mm, it is easy to excessively discharge the honing slurry to the outside of the honing pad, and it is difficult to uniformly and sufficiently supply the honing slurry to the wafer surface. As a result, it is necessary to increase the supply amount of the honing slurry and increase the running cost. -12- 201021972 The width of the above groove is more preferably in the range of 〇15~4mm, and particularly preferably in the range of 0.2~3mm. The pitch of the grooves is preferably in the range of 1 to 20 mm because the honing slurry can be uniformly and sufficiently supplied to the surface of the wafer, and the honing pad which is excellent in honing speed or honing uniformity is formed. The pitch of the above grooves is preferably in the range of 2 to 18 mm, and particularly preferably in the range of 3 to 16 mm. The shape of the hole that is opened to the honing side surface of the honing pad is not particularly limited, and the shape of the opening portion of the honing side surface of the honing layer may be any of a circle, a triangle, a quadrangle, and a hexagon. The shape of the cut surface of the hole which is formed when cut perpendicularly with respect to the honing side surface of the honing layer may be any one of a rectangular shape, a trapezoidal shape, and a triangular shape. Among them, from the viewpoint of easy hole processing and even if the honing pad is worn, the area of the hole at the opening portion does not change, and the honing performance is not easily changed, it is preferable that the hole such as a columnar hole is located on the honing side surface of the honing layer. The shape of the opening portion is a circular shape, and the shape of the cut surface which is perpendicularly cut with respect to the honing side surface of the honing layer is a rectangular hole. The distribution of the holes formed in the honing side surface of the honing pad is not particularly limited, and the holes are preferably distributed on the honing side surface. For example, when the grooves are in a lattice shape, each of the lattices is formed one by one or Multiple holes. The area of the opening of the hole on the honing side surface of the honing layer is from 观点. 〇 5 mm 2 or more from the viewpoint of uniformly and sufficiently supplying the honing slurry to the surface of the wafer and facilitating the processing of the hole. It should preferably be in the range of 0.1 to 20 mm 2 , more preferably in the range of 0.3 to 15 mm 2 , and particularly preferably in the range of 0.5 to 12 mm 2 . The holes which are open to the honing side surface of the honing layer may be all of the shapes, the shape of the cut surface and the area of the opening portion having the same opening portion of -13 to 201021972, or some or all of them may be mutually phased. Different. The ratio (a/b) of the total volume (a) of the groove opening to the honing side surface of the honing layer to the total volume (b) of the hole opening to the honing side surface of the honing layer is preferably 50/ In the range of 50 to 90/10, the balance between the maintenance of the honing slurry or the uniform supply of the wafer surface and the discharge of the swarf is particularly excellent. If the ratio (a/b) is less than 50/50, the uniform supply of the honing slurry on the wafer surface and the discharge of the honing chips are reduced, and the honing speed g or the honing uniformity is lowered on the wafer surface. It is prone to nicks. On the other hand, if the ratio (a/b) is more than 90/10, the maintenance of the honing slurry is lowered, and the honing speed or the honing uniformity is liable to lower. The ratio (a/b) is preferably in the range of 5 5/45 to 88/12, and particularly preferably in the range of 60/40 to 86/14. The thickness of the honing layer is preferably in the range of 0.7 to 1.6 mm from the viewpoint of honing performance and workability, and more preferably in the range of 0.75 to 1.5 mm, particularly preferably in the range of 0.8 to 1.4 mm. If the thickness of the honing layer is less than 0.7 mm, the hardness of the fixing plate of the honing device is affected, and when the buffer layer is laminated on the lower layer, the hardness of the grading layer is also affected, and the honing layer is worn. The honing performance is not stable. On the other hand, if the thickness of the honing layer is larger than 1.6 mm, the bending rigidity of the honing pad becomes large, and even if the buffer layer is laminated on the lower layer, the honing layer is less likely to be deformed, and the honing uniformity is lowered. The honing pad of the present invention has excellent flatness performance by improving the hardness of the honing layer, and the surface of the wafer is not honed by the grindstone in the slurry by not having the pores exposed on the side of the groove or the hole. The honing layer is preferably a non-foamed structure from the viewpoint that the particles are coagulated and adhered to the pores to cause scoring. The D hardness of the honing layer is from the viewpoint of improving the flattening performance and suppressing the surface of the wafer from -14 to 201021972, preferably in the range of 50 to 80, and in the range of 56 to 74. By measuring the D hardness of the material, it can be regarded as the material of the honing layer of the honing pad of the present invention as the D hardness of the honing layer, and it is possible to use one type or two or more types of polymer. . A polymer which is a material of the honing layer, propylene, polybutylene, ethylene-ethyl acetate copolymer styrene, polyvinyl chloride, acrylic resin, epoxy resin, polyester, polyamine or the like. Among them, a urethane having a particularly excellent honing property such as formation of a flattening surface is a polyurethane, and a thermoplastic polyurethane obtained by reacting a polymer diol or an organic extender is particularly preferable. The above polymer diols such as polyethylene glycol, polytetraol; poly(arylene adipate) diol, poly(2-octyl adipate) diol, poly(2-methyl- 1 ) - fluorenylene adipate) diol, poly(adipic acid oligoester diol; poly(hexylene hexylene carbonate) diol, poly 2,2-dimethyl-1,3-propane carbonate Glycol and the like. As such a polymer diol, one type or the above organic diisocyanate may be used alone, and any of the previously produced organic diisocyanates such as diisoisophorone diisocyanate or dicyclohexylmethane-4,4 aliphatic may be used. Or an alicyclic diisocyanate; an aromatic diisocyanate such as diphenylmethane-ester, 2,4-diisocyanate, or 2,6-diisocyanurate. It is more preferable that the material of the honing layer of 53 to 77 is not specifically limited to synthetic or natural, such as polyethylene, poly, butyral resin, poly i, polyurethane, and can be excellent and wafer table From the viewpoint of the polishing pad, polyether di-methyl-1,8-, .8-octylene-co: amyl ester) diol such as diisocyanate and chain diol (hexylene-co-etc. Two or more kinds of polycarbonate diols are used. For urethane cyanate, 'diisocyanate, etc. ・ 4,4' _diisocyanate toluene, 1,5 - organic 2 Isocyanate-15-201021972 The ester may be used alone or in combination of two or more. Among them, from the viewpoint of abrasion resistance of the obtained honing pad, it is preferably diphenylmethane-4,4,- The above-mentioned chain extender may be any one of the chain extenders previously used for the manufacture of polyurethanes. The chain extender preferably contains two or more activities which are reacted with isocyanate groups in the molecule. a low molecular compound having a molecular weight of 35 氢, such as ethylene glycol, diethylene glycol, 1,2-propylene glycol, 1,3_propylene 1,2-butanediol, 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6 — Hexanediol, 3-methyl-1,5-pentanediol, 1,4-bis(β-hydroxyethoxy)benzene, U4-cyclohexanediol, cyclohexanedimethanol (1,4-cyclohexyl) Alkane dimethanol, etc., bis (β-hydroxyethyl) terephthalate, 1,9-nonanediol, serodiol, etc.; ethylenediamine, propylenediamine, butanediamine, Diamine, octanediamine, decanediamine, hydrazine, xylene diamine, isophorone diamine, piperene, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, adipic acid Diamines such as diterpenoids, diammonium isophthalate, 4,4'-diamine diphenylmethane, 4,4'-diamine diphenyl ether, etc. Such a chain extender can be used alone. And 2 or more types may be used. Among them, it is preferably 1,4-butanediol and/or 1,4-cyclohexanedimethanol. The above-mentioned thermoplastic polyurethane may be the above-mentioned polymer diol or organic diol. Isocyanate and chain extender are prepared as raw materials by a known method such as a prepolymer method or a one-step foaming method. However, it is preferable to melt-knead the above-mentioned polymer diol, organic diisocyanate and chain extender in a predetermined ratio in the absence of a solvent, and it is preferable to use a multi-axis spiral type extruder to continuously It is produced by a method of melt polymerization. The ratio of use of each component is appropriately selected in consideration of the physical properties of the honing layer made of thermoplastic polyurethane, such as -16*201021972. The active hydrogen atom contained in the polymer diol and the chain extender is 1 mol, and the isocyanate group contained in the organic diisocyanate is used in a ratio of 0.95 to 1.3 mol. If the above ratio is less than 0.95 mol, The mechanical strength and abrasion resistance of the honing layer obtained from the thermoplastic polyurethane are lowered, and if it exceeds 1.3 m, the productivity or storage stability of the thermoplastic polyurethane is lowered. From the viewpoints of mechanical strength or abrasion resistance of the obtained honing layer and productivity or storage stability of the thermoplastic polyurethane, it is preferably contained in relation to the polymer diol and the chain extender g. The active hydrogen atom is 1 mol, and the isocyanate group contained in the organic diisocyanate is used in a ratio of 0.96 to 1.1 mol, and each component is used, and it is particularly preferable to use each component in a ratio of 0.97 to 1.05 mol. The honing layer may be formed only of the above-mentioned polymer, and may contain other components than the above-mentioned polymer within the range in which the obtained honing pad can exert the effects of the present invention. Such other ingredients such as a crosslinking agent, a chelating agent, a crosslinking accelerator, a crosslinking auxiliary, a softening agent, a tackifier, an anti-aging agent, a foaming agent, a processing aid, an adhesion enhancer, a crystal nucleating agent , heat stabilizer, g weathering stabilizer, antistatic agent, colorant, lubricant, flame retardant, flame retardant auxiliary (yttria, etc.), anti-whitening agent, mold release agent, thickener, antioxidant, conductive Agents, etc. In the honing layer, the content of the above other components is preferably less than 50% by mass, more preferably less than 20% by mass, particularly preferably less than 5% by mass. The manufacturing method of the honing layer is not particularly limited, and a sheet made of the above-mentioned one or two or more kinds of polymers, a polymer composition, or a ruthenium molecular composition containing the above-mentioned other components as required is produced. A honing layer can then be produced from this sheet. The sheet is produced by extruding the above polymer or polymer composition by an extruder. Specifically, for example, a polymer can be used by using an extruder equipped with a T die, -17-201021972. Or a method of melt extrusion of a polymer composition. The extruder system can use a single-axis extruder, a two-axis extruder, or the like. The sheet is produced by previously producing a block formed of the above polymer or polymer composition, and then slicing it. The obtained sheet can be processed into a desired size and shape by cutting, punching, cutting, etc. as required to be processed into a desired thickness by grinding or the like to form a honing layer. The method of forming the groove opening on the honing side surface of the honing layer is not limited to Φ. Specifically, for example, a method of forming a groove by cutting the sheet, and a method of forming a groove by bringing a heated mold or metal wire into contact with the sheet and irradiating a portion of the light such as laser light to melt, decompose, or volatilize And using a mold having a convex portion for forming a groove, injecting a melt of the polymer or polymer composition therein, and then solidifying it, or injecting an uncured polymer raw material to harden it, and forming a groove in advance. A method of manufacturing a sheet or the like. The method of forming the holes opening in the honing side surface of the honing layer is not particularly limited. Specifically, for example, a method in which the sheet is subjected to cutting processing by a mechanical means such as a drill is used, and a heated mold or a metal wire is brought into contact with the sheet, and light such as laser light is irradiated to partially melt or decompose it. A method of volatilizing to form a hole or the like. Among them, it is preferable to form the method by cutting, because the processing precision is good and the material constituting the honing layer is not easily deteriorated by heat. The honing pad of the present invention may be a single layer structure formed only by the above honing layer having grooves and holes on the honing side surface, but to improve the honing uniformity in the wafer surface, and is suitable for the honing layer. Honing the side surface and the opposite side of the surface, the layering is slow -18 - 201021972. The lamination of the buffer layer can be carried out using a known adhesive or adhesive. The A hardness of the buffer layer is preferably from 30 to 90. The material of the buffer layer is not particularly limited, and for example, an elastomer having no foamed structure or a foamed structure may be used, or a resin may be impregnated into the nonwoven fabric. The honing pad of the present invention can be used for known honing slurries and honing of chemical machines. The honing slurry contains a liquid medium such as water or oil; a honing agent such as cerium oxide, aluminum oxide, oxidized coating, cerium oxide or cerium carbide; a base, an acid, an oxidizing agent, a surfactant, a chelating agent and the like. For chemical mechanical honing, lubricants, coolants, etc. may be used simultaneously with the honing slurry as required. The honing of the chemical machine can be carried out by using a known chemical mechanical honing device, and the honing surface is brought into contact with the honing pad at a constant speed for a certain period of time under pressure through the honing slurry. Before honing or honing, it is advisable to use a diamond grinder to adjust the honing pad. The object to be honed is not particularly limited, such as crystal, enamel, glass, optical substrate, electronic circuit substrate, multilayer wiring substrate, hard disk, semiconductor wafer, etc., but the honing pad of the present invention can be applied to honing semiconductor The use of wafers. In particular, when the relative speed of the honing and the honing pad is apt to be fast, and the semiconductor wafer having a diameter of 6 inches or more, especially a diameter of 8 inches or more, which is difficult to control the honing performance over a large area, Because the honing pad of the present invention has excellent honing performance and has a long service life, the honing pad is particularly suitable for honing such semiconductor wafers. EXAMPLES Hereinafter, the present invention will be specifically described by examples, but the present invention is not limited to such examples. Further, each evaluation was carried out in accordance with the method described below. -19- 201021972 [D hardness of material] It is measured in accordance with JIS K 7 311 at a measurement temperature of 25 °C. [Mulching performance] The honing pad was installed in the honing device "MIRRA" manufactured by Applied Materials, and the diamond grinding machine (diamond number # 20 0 ) manufactured by Mitsubishi Material Co., Ltd. was used to flow distilled water at a rate of 200 mL/min. The surface of the honing pad was ground (hereinafter referred to as "conditioning") for 30 minutes by rotating the machine at a number of 100 rpm and a table rotation speed of 50 rpm. @ Next, dilute the slurry "GPL - C1010" of Showa Denko Co., Ltd. into 1 by ion-exchanged water under the conditions of a grinding machine rotation number of 100 rpm, a table rotation speed of 8 rpm, a head rotation number of 79 rpm, and a honing pressure of 24 kPa. The solution was supplied at a rate of 200 mL/min. The surface of the PETEOS (plasma-promoted tetraethyl hydroxydecane) film having a film thickness of 10 nm and having no pattern was 8 inches in diameter.矽 Wafer edge conditioning and honing, a total of 60 seconds, after the exchange of wafers, repeated honing and conditioning, honing a total of 9 wafers. Next, the surface of one sheet has HDP (High Density Plasma) having a pattern of a convex portion width _ ΙΟΟμιη, a concave portion width ΙΟΟμηη, a pitch of 200 μm, a thickness of an oxide film of a convex portion of 600 nm, and a difference between an initial portion of a convex portion and a concave portion of 500 nm. The wafer having a diameter of 8 inches of the oxide film was subjected to honing for 60 seconds under the same conditions as the above honing conditions. Secondly, in order to investigate the honing performance after the pad wear, only conditioning for about 25 hours (equivalent to the conditioning time of honing 1,500 wafers), and then honing 9 pieces under the same conditions as the above honing conditions. The surface has a pattern of PETEOS film with a diameter of 8 inches of wafer, and secondly, a piece of surface has a patterned HDP oxide film with a diameter of 8 inches, and the above -20-201021972 honing conditions Ponder over the same conditions. The wafers with PETEOS film on the surface of the 8th and 18th sheets of the 20 wafers that have been honed are measured, and the PETEOS film before and after honing is measured in the wafer surface. The film thickness was 49 points each to determine the honing speed of each point. The average enthalpy of the honing speed of 49 was used as the honing speed (R), and the honing uniformity was evaluated by the unevenness obtained by the following formula (7). The smaller the unevenness is, the better the honing uniformity of the PETEOS film in the wafer surface is evenly honed. Inhomogeneity (%) = (a/R)xl〇〇( 7 ) (However, σ: represents the standard deviation of the honing speed of 49 points, and R: represents the average 値 of the honing speed of 49 points.) In addition, the wafers having the PETEOS film on the surface of the ninth and the ninth sheets were measured using a defect inspection device "ComPLUS" manufactured by Applied Materials, Inc., and the number of defects of 0.2 μm or more was measured. In the wafers of the HDP oxide film having the pattern which were honed in the tenth and the twentieth, the honing speed was determined from the amount of change in the oxide film thickness of the convex portion and the concave portion at the center portion of the wafer. The higher the honing speed of the convex portion, the smaller the honing speed of the concave portion, and the flattening of the wafer surface is achieved in a short time and with a small amount of honing, which is more appropriate. [Production Example 1] Production of Thermoplastic Polyurethane Polybutanediol having a number average molecular weight of 2000 [abbreviation: PTMG], poly(2-methyl-1,8-octylene-co) having a number average molecular weight of 2000 - sulfhydryl adipate diol [abbreviation: hydrazine; fluorene unit and 2-methyl-1,8_octylene unit molar ratio = 7 to 3], 1,4_cyclohexene Alkanediethanol-21- 201021972 [abbreviation: CHDM], 1,4-butanediol [abbreviation: BD], and diphenylmethane-4,4'-diisocyanate [abbreviation: MDI] to PTMG: PNOA: CHDM: BD: MDI is used in a mass ratio of 24.5: 10.5: 5_0: 12.5: 47.5, continuously supplied by a metering pump in a coaxial rotary 2-axis extruder, and subjected to continuous melt polymerization to produce thermoplastic polyurethane. ester. The resulting melt of the thermoplastic polyurethane was continuously extruded into a bundle of water and then finely cut by a granulator to obtain granules. The pellet was subjected to dehumidifying and drying at 7 ° C for 20 hours to produce a thermoplastic polyurethane. p [Example 1] The thermoplastic polyurethane obtained in Production Example 1 was placed in a uniaxial extrusion molding machine, and extruded into a T-die to form a sheet having a thickness of 2 mm. Boring to form a uniform sheet having a thickness of 〇9 mm. This sheet had a D hardness of 63. Next, the sheet was cut into a circular shape having a diameter of 51 cm, and a groove having a groove width of 1.0 mm, a groove depth of 0.65 mm, and a groove pitch (longitudinal and lateral pitch) of 7.0 mm was formed on the surface of one surface (cut shape). In the case of a rectangular shape, a hole having a diameter of 2.5 mm and a depth of 0.45 mm is formed in the center of each lattice g of the lattice-like groove by cutting. Next, a foamed polyurethane sheet having a thickness of 1.0 mm (A hardness 48) was adhered to the surface of the groove and the surface of the hole and the opposite side by an adhesive tape to prepare a lining pad of a laminated structure. The composition of the honing layer of the obtained honing pad is as shown in the following Table 1. The honing performance is evaluated by the above method, and the honing speed and the honing are uniform as shown in the following Table 2. The properties of the flatness and the flattening are excellent, the number of defects is small, and the change in the honing performance during long-term use is also small. [Example 2] -22-201021972 In the same manner as in Example 1, a circular sheet having a thickness of 1.3 mm and a diameter of 51 cm was obtained, and a groove width of 5.5 mm, a groove depth of 0.9 mm, and a groove pitch were formed on the surface of one surface thereof. (Vertical and horizontal pitch) A grid-shaped groove of 4.0 mm (the shape of the cut surface is a rectangle), and a hole having a diameter of 1.5 mm and a depth of 0.75 mm was formed in the center of each lattice of the lattice-like groove by cutting using a drill. Next, on the surface of the groove and the hole and the surface on the opposite side, a foamed polyurethane sheet having a thickness of 1.0 mm (A hardness 48) was adhered by an adhesive to prepare a lining pad having a laminated structure. The structure of the honing layer of the obtained honing pad is shown in Table 1 below.硏 The results of the honing performance are evaluated by the above method. As shown in Table 2 below, the honing speed, the honing uniformity and the flattening performance are excellent, the number of defects is small, and the honing performance is used for a long time. The change is also small. [Example 3] In the same manner as in Example 1, a circular sheet having a thickness of 1.1 mm and a diameter of 5 1 cm was obtained, and a groove width of 1.0 mm, a groove depth of 0.8 mm, and a groove pitch were formed on the surface of one surface thereof. The vertical and horizontal pitches are 12.0 mm lattice-shaped Φ grooves (the shape of the cut surface is a rectangle), and the drill is used to cut the intermediate point 4 of the center of the lattice and the line of the four corners in each lattice of the lattice-like groove. There are five locations in the center of the premises and the grid to form holes with a diameter of 2.0 mm and a depth of 0.6 mm. Next, a foamed polyurethane sheet having a thickness of 1.0 mm (A hardness 48) was adhered to the surface of the groove and the surface of the hole and the opposite side by an adhesive tape to prepare a lining pad having a laminated structure. The composition of the honing layer of the obtained honing pad is as shown in Table 1 below. As a result of evaluating the honing performance by the above method, as shown in the second table below, the honing speed, the honing uniformity, and the flattening performance are excellent, and the number of defects -23-201021972 is small, and when used for a long time. The change in honing performance is also small. [Comparative Example 1] In Example 1, a honing pad having a laminated structure was produced in the same manner as in Example 1 except that the depth of the hole was 0.6 5 mm. The composition of the honing layer of the obtained honing pad is as shown in the first table below. As a result of evaluating the honing performance by the above method, the honing speed, the honing uniformity, and the flattening performance were inferior as shown in Table 2 below. [Comparative Example 2] g In Example 1, a honing pad having a laminated structure was produced in the same manner as in Example 1 except that the depth of the groove was 0.4 5 mm. The composition of the honing layer of the obtained honing pad is as shown in the first table below. As a result of evaluating the honing performance by the above method, as shown in the second table below, the initial honing speed, honing uniformity, and flattening performance are excellent, and the number of defects is small, and when used for a long time, honing The speed and honing uniformity are reduced, and the number of defects is also large, and the stability of the honing performance is insufficient. [Comparative Example 3] In the same manner as in Example 2 except that the hole was made into a through hole (depth: 1.3 mm), a honing pad having a laminated structure was produced. The composition of the honing layer of the obtained honing pad is the result of evaluating the honing performance by the above method as shown in the following Table 1, and the initial honing speed, 硏, as shown in the following Table 2 Excellent grinding uniformity and flattening performance, and fewer defects. When used for a long time, the honing speed and honing uniformity are reduced, and the stability of honing performance is insufficient. [Comparative Example 4] In Example 2, a honing pad having a laminated structure was produced in the same manner as in Example 2 except that no pores were formed. The composition of the honing layer of the obtained honing pad is as shown in the first table below. As a result of evaluating the honing performance by the above method, as shown in the second table below, the number of defects in the honing speed and the honing uniformity was also slightly increased. [Comparative Example 5] In Example 3, a lap pad of a laminated structure was produced in the same manner as in Example 3 except that the width of the groove was 〇.5 mm, the depth of the groove was 0.3 mm, and the depth of the hole was 〇.3 mm. . The composition of the honing layer of the obtained honing pad is as shown in the first table below. As a result of evaluating the honing performance by the above method, as shown in the second table below, the honing speed and the honing uniformity are inferior, and the number of defects is also increased. Moreover, the honing speed and the uniformity of honing during long-term use are also large, and the stability of the honing performance is insufficient. ❹ -25- 201021972 [Table 1]
實施例 比較例 1 2 3 1 2 3 4 5 <硏磨層> 厚度（mm) 0.9 1.3 1.1 0.9 0.9 1.3 1.3 1.1 <溝> 臟（圖形） 格子狀 格子狀 格子狀 格子狀 格子狀 格子狀 格子狀 格子狀 麵臟 長方形 長方形 長方形 長方形 長方形 長方形 長方形 s方形 寬度 (mm) 1.0 0.5 1.0 1.0 1.0 0.5 0.5 0.5 深度 (mm) 0.65 0.9 0.8 0.65 0.45 0.9 0.9 0.3 比例*n(%) 72 69 73 72 50 69 69 27 差 *2> (mm) 0.25 0.4 0.3 0.25 0.45 0.4 0.4 0.8 間距（mm) 7.0 4.0 12.0 7.0 7.0 4.0 4.0 12.0 <孔> m. 圖餓 圓概 圓柱狀 圓献 圓柱狀 圓柱狀 無 圓柱狀 開口部位直徑 2.5 1.5 2.0 2.5 2.5 1.5 — 2.0 (nun) 開口部位面積 4.9 1.8 3.1 4.9 4.9 1.8 — 3.1 (mm2) 深度 （mm) 0.45 0.75 0.6 0.65 0.45 1.3 — 0.3 比例*n(%) 50 58 55 72 50 100 — 27 差*2> (腿） 0.45 0.55 0.5 0.25 0.45 0 — 0.8 (溝深JSH孔深《) (mm) 0.2 0.15 0.2 0 0 -0.4 — 0 比率（a/b) 79/21 72/28 66/34 73/27 73/27 59/41 100/0 43/57 * 1)相對於硏磨層的厚度之比例 *2)硏磨層的厚度之差 -26- 201021972 【第2表】 實施例 比較例 1 2 3 1 2 3 4 5 <硏磨性能> [使用初期]*3) 無圖形PETEOS膜 硏磨速度（R) (nm/min) 417 433 395 368 420 422 313 263 不均勻性 （％) 8 7 9 18 9 10 16 22 缺陷數 （個） 43 44 51 49 45 41 79 108 有圖形HDP膜 凸部位硏磨速度（nm/min) 359 371 360 336 355 350 278 243 凹部位硏磨速度（nm/min) 68 63 62 86 66 68 50 43 速度比（凸/凹） 5.3 5.9 5.8 3.9 5.4 5.1 5.6 5.7 [25小時調整後]*4) 無圖形PETEOS膜 硏磨速度（R) (nm/min) 403 438 396 373 230 385 326 129 不均勻性 （％) 9 7 10 14 22 13 14 48 缺陷數 （個） 50 42 55 73 101 52 84 141 有圖形HDP膜 凸部位硏磨速度（nm/min) 357 369 352 321 218 332 264 136 凹部位硏磨速度（nm/min) 61 61 58 93 40 65 47 19 速度比（凸/凹） 5.9 6.0 6.1 3.5 5.5 5.1 5.6 7.2 *3)第8、9或10枚的晶圓之評價結果 *4)第18、19或2〇枚的晶圓之評價結果 應用於產業之可能性 依據本發明，提供一種得到高硏磨速度，硏磨均勻性 及平坦化性能優異，且具有少發生刻痕等優異的硏磨性能 ，即使持續長時間的硏磨，硏磨性能的變化小而使用壽命 長之硏磨墊，此硏磨墊係於對形成於半導體晶圓上的氧化 膜等絕緣膜或金屬膜等進行化學機械之硏磨時，特別有助 益。 -27- 201021972 【圖式簡單說明】 第1圖（a)係硏磨墊的格子狀溝之模式圖，（b)係溝 的切面形狀之模式圖。 【主要元件符號說明】 無。EXAMPLES Comparative Example 1 2 3 1 2 3 4 5 <honing layer> Thickness (mm) 0.9 1.3 1.1 0.9 0.9 1.3 1.3 1.1 <groove> Dirty (graphic) lattice-like lattice-like lattice-like lattice-like lattice Grid-like lattice-like lattice surface dirty rectangular rectangle rectangular rectangle rectangular rectangle s square width (mm) 1.0 0.5 1.0 1.0 1.0 0.5 0.5 0.5 depth (mm) 0.65 0.9 0.8 0.65 0.45 0.9 0.9 0.3 ratio * n (%) 72 69 73 72 50 69 69 27 Poor*2> (mm) 0.25 0.4 0.3 0.25 0.45 0.4 0.4 0.8 Pitch (mm) 7.0 4.0 12.0 7.0 7.0 4.0 4.0 12.0 <Hole> m. Figure Hungry Round Cylindrical Round Cylindrical Cylinder Non-cylindrical opening diameter 2.5 1.5 2.0 2.5 2.5 1.5 — 2.0 (nun) Opening area 4.9 1.8 3.1 4.9 4.9 1.8 — 3.1 (mm2) Depth (mm) 0.45 0.75 0.6 0.65 0.45 1.3 — 0.3 Ratio*n(%) 50 58 55 72 50 100 — 27 Poor*2> (leg) 0.45 0.55 0.5 0.25 0.45 0 — 0.8 (Ditch depth JSH hole depth “) (mm) 0.2 0.15 0.2 0 0 -0.4 — 0 Ratio (a/b) 79 /21 72/28 66/34 73/27 73/27 59/41 100/0 43/57 * 1) Ratio with respect to thickness of honing layer *2) Difference in thickness of honing layer -26- 201021972 [Table 2] Example Comparative Example 1 2 3 1 2 3 4 5 < Honing performance > [Initial use]*3) Non-patterned PETEOS film honing speed (R) (nm/min) 417 433 395 368 420 422 313 263 Inhomogeneity (%) 8 7 9 18 9 10 16 22 Number of defects (units) 43 44 51 49 45 41 79 108 honing speed (nm/min) of the convex part of the pattern HDP film 359 371 360 336 355 350 278 243 honing speed (nm/min) of the concave part 68 63 62 86 66 68 50 43 Speed ratio (convex/concave) 5.3 5.9 5.8 3.9 5.4 5.1 5.6 5.7 [25-hour adjustment]*4) No-pattern PETEOS film honing speed (R) (nm/min) 403 438 396 373 230 385 326 129 Inhomogeneity (%) 9 7 10 14 22 13 14 48 Number of defects (units) 50 42 55 73 101 52 84 141 honing speed (nm/min) of the convex portion of the pattern HDP film 357 369 352 321 218 332 264 136 concave Part honing speed (nm/min) 61 61 58 93 40 65 47 19 Speed ratio (convex/concave) 5.9 6.0 6.1 3.5 5.5 5.1 5.6 7.2 *3) Evaluation results of wafers of 8, 8, or 10 *4 ) 18, 19 or 2〇 The possibility of applying the evaluation result of the wafer to the industry According to the present invention, it is possible to provide a high honing speed, excellent honing uniformity and flattening performance, and excellent honing performance such as occurrence of less scratches, even if it continues for a long time. Time honing, honing pad with small change in honing performance and long service life. This honing pad is used for chemical mechanical honing of an insulating film or a metal film such as an oxide film formed on a semiconductor wafer. Especially helpful. -27- 201021972 [Simplified description of the drawings] Fig. 1(a) is a schematic view showing a lattice-like groove of the honing pad, and (b) is a schematic view showing the shape of the groove of the groove. [Main component symbol description] None.
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