201021652 υδυ^υυ^ 29453twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種線路板製程，且特別是有關於一 種具有尚密度内連線（High Density Interconnection，HDI) 之線路板製程。 【先前技術】 在目前的半導體封裝製程中，由於線路板具有佈線細 密、組裝緊湊及性能良好等優點，使得線路板已成為經常 使用的構裝元件之一。線路板能與多個電子元件（electronic component)組裝，而這些電子元件例如是晶片（chip)與 被動元件（passive component)。透過線路板，這些電子 元件得以彼此電性連接，而訊號才能在這些電子元件之間 傳遞。 一般而言，線路板主要是由多層圖案化線路層 (patterned circuit layer)及多層介電層（dielectriclayer) 父替豎合而成，並藉由導電盲孔（conductive via)以達成 圖案化線路層彼此之間的電性連接。由於近年來電子產品 走向小型、輕量、薄型、高速、高機能、高密度、低成本 化，以及電子元件封裝技術亦朝向高腳數、精細化與集積 化發展，因此線路板亦走向高密度佈線、細線小孔化、複 合多層化、薄板化發展。 南密度内連線（HDI)之線路板是指利用導電盲孔搭 配線路層與微間距（fme pitch)以達到高度互聯的一種技 201021652 u»uyuu^ 29453twf.doc/n 術 ^ 吏在相同單位面積中能夠搭載更多電子元件或是 ^夕的線路。由於〶密度内連線之祕板包 層，因此各層線路層間良好 二、，路 之線路板的_之-。 K賴成為⑽度内連線 【發明内容】 % 内連ΐ:=:種線路板製程，製作-具有高密度 ，發:提出-種線路板製程。首先’提供 Ϊ路上表面與-第-線路圖案，其4基 介電層於線路基材h介二二成上：:導，構的 案。墓带钍接屮X人+ 电層设盍上表面與第一線路圖 形成一*入〃電層中且電性連接至第—線路圖案。 結構相=圖t介電層的表面上，其中凹刻圖案與i電 1二線路圖Γ，二導Γ料於凹刻圖案内’以形成 接至第—線路圖案:線路圖案藉由導電結構電性連 包括明之—實施例巾’上述之形成凹刻圖案的方法 括雷射祕、電_刻或機械加n 刀切====中，上述之機械加工製程包括水 源、包實麵巾，上述制雷射燒敗雷射光 雷射括$親雷射、紅树料、準分子魏或遠紅外線 6 201021652 usuyuuj 29453twf.doc/n 在本發明之一實施例中，上述之介電層的材質包括高 分子聚合物。 在本發明之一實施例中，上述之高分子聚合物為選自 由環乳樹脂、改質之環氧樹脂、聚脂（p〇lyester)、丙烯 酸酯、氟素聚合物（fluoro-polymer)、聚亞苯基氧化物 (polyphenylene oxide )、聚醯亞胺（polyimide )、紛藤樹201021652 υδυ^υυ^ 29453twf.doc/n IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a circuit board process, and more particularly to a high density interconnect (HID) ) The circuit board process. [Prior Art] In the current semiconductor packaging process, since the wiring board has the advantages of fine wiring, compact assembly, and good performance, the wiring board has become one of the frequently used components. The circuit board can be assembled with a plurality of electronic components such as a chip and a passive component. Through the circuit board, these electronic components are electrically connected to each other, and signals can be transmitted between these electronic components. Generally, the circuit board is mainly formed by a plurality of patterned circuit layers and a plurality of dielectric layers, and a conductive via is used to achieve a patterned circuit layer. Electrical connection between each other. In recent years, electronic products have become smaller, lighter, thinner, high-speed, high-performance, high-density, low-cost, and electronic component packaging technology is also moving towards high-volume, fine-grained and integrated development. Wiring, thin line small hole, composite multilayer, thin plate development. The circuit board of the South Density Interconnect (HDI) refers to a technique in which a conductive blind hole is used with a line layer and a fme pitch to achieve a high degree of interconnection. 201021652 u»uyuu^ 29453twf.doc/n More electronic components or circuits can be mounted in the area. Due to the secret layer of the interconnecting density of the tantalum, the layers of the layers are good, and the circuit board of the road is _-. K Lai becomes a (10) degree connection [Invention] % 内 ΐ: =: a kind of circuit board process, production - with high density, hair: proposed - a kind of circuit board process. First, the surface of the circuit and the -th-line pattern are provided, and the four-base dielectric layer is formed on the circuit substrate h by two or two:: conduction, structure. The tomb belt is connected to the X-person + electric layer, and the upper surface and the first circuit pattern form a *into the electric layer and are electrically connected to the first line pattern. Structural phase = on the surface of the dielectric layer of the t, wherein the indented pattern and the i-electrode 1 and 2 are in the intaglio pattern to form a connection to the first line pattern: the line pattern is made by the conductive structure The electrical connection includes the method of forming the intaglio pattern in the above-mentioned embodiment. The method for forming the intaglio pattern includes the laser secret, the electric engraving or the mechanical plus n knife cutting ====, and the above mechanical processing includes the water source and the covered towel. The above-described laser-fired laser beam includes a pro-laser, a mangrove material, an excimer or a far infrared ray 6 201021652 usuyuuj 29453 twf.doc/n In an embodiment of the invention, the dielectric layer is Materials include high molecular weight polymers. In an embodiment of the invention, the polymer is selected from the group consisting of a cyclic latex resin, a modified epoxy resin, a polyester, an acrylate, a fluoro-polymer, Polyphenylene oxide, polyimide, vine
脂（phenolicresin)、聚砜（p〇lySulfone )、矽素聚合物（siiicone polymer )、BT 樹月旨(bismaleimide triazine modified epoxy (BT Resin ))、氰酸聚酯（cyanate ester)、聚乙烯 (polyethylene)、聚碳酸酯樹脂（p〇iyCarb〇nate，PC)、 丙烯-丁二烯苯乙烯共聚合物 ( aery lonitrile-butadiene-styrene copolymer, ABS copolymer )、聚對苯二甲酸乙二醋（p〇iyethylene terephthalate，PET )樹脂、聚對苯二甲酸丁二酯 (polybutylene terephthalate，PBT )樹脂、液晶高分子（liquid crystal polymers, LCP )、聚酸胺 6 ( polyamide 6, PA 6 )、 尼龍（Nylon )、共聚聚曱路（polyoxymethyletie, POM )、 聚苯硫醚（polyphenylene sulfide，PPS)及環狀烯烴共聚高 分子（cyclic olefin copolymer, COC )所組成的群組。 在本發明之一實施例中，上述之介電層包括多顆觸媒 顆粒。 在本發明之一實施例中，上述之這些觸媒顆粒包括多 個奈米金屬顆粒。 在本發明之一實施例中，上述之這些觸媒顆粒的材質 7 29453twf.d〇c/n 201021652 u»uyuu3 包括多個過渡金屬配位化合物。 在本發明之一實施例中，上述之這些過渡金屬配位化 合物的材質包括過渡金屬氧化物、過渡金屬氮化物、過渡 金屬錯合物或過渡金屬螯合物。 在本發明之一實施例中，上述之這些過渡金屬配位化 合物的材質為選自於由鋅、銅、銀、金、鎳、把、麵、銘、 铑、銥、鐵、猛、鉻、鉬、鎢、釩、钽以及鈦所組成的群Phenolic resin, polysulfone (p〇lySulfone), siiicone polymer, bismaleimide triazine modified epoxy (BT Resin), cyanate ester, polyethylene ), polycarbonate resin (p〇iyCarb〇nate, PC), aery lonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (p〇) Iyethylene terephthalate, PET) resin, polybutylene terephthalate (PBT) resin, liquid crystal polymers (LPP), polyamide 6 (polyamide 6, PA 6 ), nylon (Nylon) , a group consisting of polyoxymethyletie (POM), polyphenylene sulfide (PPS), and cyclic olefin copolymer (COC). In one embodiment of the invention, the dielectric layer comprises a plurality of catalyst particles. In one embodiment of the invention, the catalyst particles described above comprise a plurality of nano metal particles. In an embodiment of the invention, the material of the catalyst particles 7 29453 twf.d〇c/n 201021652 u»uyuu3 includes a plurality of transition metal coordination compounds. In one embodiment of the invention, the materials of the transition metal complex compounds described above include transition metal oxides, transition metal nitrides, transition metal complexes or transition metal chelates. In an embodiment of the present invention, the transition metal complex compound is selected from the group consisting of zinc, copper, silver, gold, nickel, palladium, face, yttrium, lanthanum, iron, lanthanum, chromium, a group of molybdenum, tungsten, vanadium, niobium and titanium
組。 在本發明之一實施例中，上述之在介電層的表面上形 成凹刻圖案的同時，更包括活化部份的這些觸媒顆粒，以 形成一活化層於凹刻圖案的内面。 在本發明之一實施例中，上述之形成第二線路圖案於 凹刻圖案内的方法包括化學沉積法。 銅 在本發明之-實施例中，上述之形成具有導電結構的 介電層的步驟，首先，形成~銅箔層於介電層的表面上。 接著，對形成有銅羯層的介電層照射—雷射，以形成至少 -從銅ίΙ層延伸至第-線路圖姆盲孔結構。形成鐘 種子層於盲孔結構_㈣相表面。透過電難子^ 電鍍形成-導電層。最後，移除部份導電層、部份 子層及越層，以形成導電結構並暴露出介電層的表^。 在本發明之一實施例中，上述之实I品 銀、鎳、錫或銘。 在本發明之-實施例中，上述之移除部份導電層、部 份電鑛種子層及銅箱層的方法包括蝕刻或研磨。 201021652 WWW 29453twf.doc/n 在本發明之一實施例中，上述之形成具有導電結構的 介電層的步驟，首先，形成一銅箔層於介電層的表面上。 接著’對形成有銅箔層的介電層照射一雷射，以形成至少 一從銅箔層延伸至第一線路圖案的盲孔結構。填乂導電二 料於盲孔結構中’以形成導電結構。最後，移除銅箱層， 以暴露出介電層的表面。 在本發明之一實施例中’上述之雷射之光源包括紅外 Φ 線雷射、紫外線雷射、準分子雷射或遠紅外線雷射。 在本發明之一實施例中’上述之導電材料包括金屬導 電膏或高分子導電材料。 在本發明之一實施例中，上述之金屬導電膏包括鋼 膠、銀膠、碳_膠、鋼膏、銀膏或錫膏。 在本發明之一實施例中，上述之高分子導電材料包括 複合型1%分子導電材料或結構型高分子導電材料。 在本發明之一實施例中，上述之複合型高分子導電材 料是將導電填料以填充複合、表面複合或層積複合等方式 複合高分子材料而製得。 工 在本發明之一實施例中，上述之複合型高分子導電材 料之材質種類包括塑料、橡膠、樹脂塗料或膠黏劑。 在本發明之一實施例中，上述之導電填料包括碳黑、 金屬粉、金屬箔片、金屬纖維或碳纖維。 在本發明之一實施例中，上述之結構型高分子導電材 料之材質包括聚乙炔材料、聚氮化硫、聚吡咯、聚苯硫鱗、 聚酞腈類化合物或聚苯胺或聚嗟吩。 29453twf.doc/n 導電錐的方法包 上述之導電錐的材質包括銅group. In one embodiment of the invention, the encapsulating particles are formed on the surface of the dielectric layer while forming an active layer on the inner surface of the intaglio pattern. In one embodiment of the invention, the method of forming the second line pattern in the intaglio pattern comprises a chemical deposition method. Copper In the embodiment of the present invention, the above-described step of forming a dielectric layer having a conductive structure, first, forming a ~copper foil layer on the surface of the dielectric layer. Next, the dielectric layer formed with the copper beryllium layer is irradiated with a laser to form at least - extending from the copper Ι layer to the first-line um blind hole structure. Forming a clock seed layer on the surface of the blind hole structure _ (four) phase. A conductive layer is formed by electroplating ^ electroplating. Finally, a portion of the conductive layer, a portion of the sub-layer, and the overlying layer are removed to form a conductive structure and expose the surface of the dielectric layer. In one embodiment of the invention, the above is a product of silver, nickel, tin or ingot. In an embodiment of the invention, the above method of removing a portion of the conductive layer, the portion of the electrodeposited seed layer, and the copper box layer comprises etching or grinding. 201021652 WWW 29453twf.doc/n In one embodiment of the invention, the step of forming a dielectric layer having a conductive structure, first, forming a copper foil layer on the surface of the dielectric layer. Next, a laser is formed on the dielectric layer on which the copper foil layer is formed to form at least one blind via structure extending from the copper foil layer to the first wiring pattern. The conductive material is filled in the blind via structure to form a conductive structure. Finally, the copper box layer is removed to expose the surface of the dielectric layer. In an embodiment of the invention, the light source of the above laser comprises an infrared Φ line laser, an ultraviolet laser, an excimer laser or a far infrared laser. In an embodiment of the invention, the conductive material described above comprises a metal conductive paste or a polymeric conductive material. In an embodiment of the invention, the metal conductive paste comprises steel glue, silver glue, carbon glue, steel paste, silver paste or solder paste. In an embodiment of the invention, the polymer conductive material comprises a composite type 1% molecular conductive material or a structural type polymer conductive material. In an embodiment of the invention, the composite polymer conductive material is obtained by compounding a conductive material into a composite material by surface filling, surface compounding or lamination. In an embodiment of the invention, the material type of the composite polymer conductive material comprises plastic, rubber, resin coating or adhesive. In an embodiment of the invention, the conductive filler comprises carbon black, metal powder, metal foil, metal fiber or carbon fiber. In an embodiment of the invention, the material of the structural polymer conductive material comprises a polyacetylene material, a polysulfurnitride, a polypyrrole, a polyphenylene sulfide scale, a polyphthalonitrile compound or a polyaniline or a polybenzazole. 29453twf.doc/n Method of Conducting Cone The material of the above-mentioned conductive cone includes copper
201021652 π务明之一實施例中，上述之形 介電層的步驟，首先，形成—導電錐」構的 接著，介㈣於線路基材上，其中4m 以構成導電結構。 再員牙力電層， 在本發明之一實施例中，上述之形成 括印刷或打線。 在本發明之一實施例中 膠或銀膠。 綜上所述，本發明先於介電層形成連接線路基材之第 二線路圖^的導電結構，麟，以詩於介電層的表面形 成可埋入第二線路圖案的凹刻圖案，其中第二線路圖案藉 由導電結構電性連接至第一線路圖案，而完成具有高密^ 内連線之線路板。因此，本發明之線路板製程，可以避免 受限分別於凹刻圖案内與盲孔結構中同時形成第二線路圖 案與導電結構時之填孔能力的限制與製程時間長等問題， 可有效縮短線路板的生產流程，進而擴充了具有高密度内 連線之線路板的應用範圍。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 圖1A至圖II繪示本發明之一實施例之一種線路板製 程。請先參考圖1A，依照本實施例的線路板製程，首先， k供一線路基材110。線路基材110具有一上表面112與 201021652 0809003 29453twf.doc/n 一第一線路圖案114 ’其中第一線路圖案114位於上表面 112上，也就是說，第一線路圖案114可算是一種一般線 路（即非内埋式線路）。 值得一提的是，線路基材Π0的結構可以僅具有單一 線路層’或是具有多層線路層。也就是說，線路基材Π0 可以是單層線路基材（single layer circuit substrate)、雙層 線路基材（double layer circuit substrate)或多層線路基材 (multi-layer circuit substrate)。在本實施例中，圖 ία 之 線路基材110是以多個介電層（未續示）以及多個圖案化 線路層（未繪示）交互堆疊所形成的多層線路基材來進行 說明。 請參考圖1Β ’接著’形成一介電層120於線路基材 110上，其中介電層120覆蓋線路基材11〇的上表面112 與第一線圖案114。詳細而言’在本實施例中’介電層120 包括多顆觸媒顆粒122，而這些觸媒顆粒122包括多個奈 米金屬顆粒。這些觸媒顆粒122的材質包括過渡金屬配位 化合物’其中過渡金屬配位化合物的材質可以包括過渡金 屬氧化物、過渡金屬氮化物、過渡金屬錯合物或過渡金屬 螯合物，且這些過渡金屬配位化合物的材質為選自於由 鋅、銅、銀、金、鎳、鈀、鉑、鈷、铑、銥、鐵、錳、鉻、 鉬、鎢、飢、鈕以及鈦所組成的群組中的一種材質。 進一步而言’這些觸媒顆粒122例如是多個金屬氧化 物顆粒、多個金屬氮化物顆粒、多個金屬錯合物顆粒、多 個金屬螯合物顆粒或多個金屬顆粒，且這些觸媒顆粒122 11 201021652 0809(WJ 29453twf.doc/n 的材質可以包括鋅、銅、銀、金、錄、纪、n姥、 银、鐵、猛、鉻、翻、鶴、叙、纽或鈦，或是這些金屬的 任意組合。也就是說，這些觸媒顆粒122内的金屬原子可 以是鋅、銅、銀、金、鎳、鈀、鉑、鈷、铑、銥、鐵、錳、 ，、鉬、鎢、釩、钽或鈦，且這些觸媒顆粒122可以包括 這些金屬原子的任意結合。舉例而言，這些觸媒顆粒122 例如是氧化銅、触雙金屬氮化物（c〇2M〇3Nx)顆粒或把 φ 金屬顆粒。 ▲值得一提的是，本發明並不限定介電層12〇的材質與 型態，雖然此處所提及之介電層12〇具體化為包括多顆觸 ，顆粒m，但其他實施例中，介電層m的材質亦可為 面分子聚合物，其甲高分子聚合物為選自由環氧樹脂、改 質之環氧樹脂、聚脂、丙烯酸酯、氟素聚合物、聚亞苯基 氧化物、聚醯亞胺、酚醛樹脂、聚砜、矽素聚合物、Βτ 樹脂、氰酸聚酯、聚乙烯、聚碳酸酯樹脂、丙烯_丁二烯_ m 笨乙烯共聚合物、聚對苯二甲酸乙二酯樹脂、聚對苯二曱 ®文丁一醋樹脂、液晶南分子、聚醯胺6、尼龍、共聚聚甲 搭、聚苯硫鍵及環狀烯Μ共聚高分子所組成的群組，此仍 屬於本發明可採用的技術方案，不脫離本發明所欲保護的 範圍。 請參考圖1C，接著’形成一銅箔層140於介電層120 的表面上。在本實施例中，鋼箔層140覆蓋介電層120 , 可視為一保護詹。 請參考圖1D，接著，對形成有銅箔層140的介電層 201021652 29453twf.doc/n 二射-第一雷射1^ ’以形成至少一從銅箱層刚延伸 至弟—線路圖案114的盲孔結構B1 (圖1D中僅示音地冷 不二個），其中盲孔結構B1暴露出位於線路基材丄 in的部份第一線路圖案114。在本實施例中第 蚤射L1為紅外線雷射光源。在其他的實施例中，第一 亦可為紫外線雷射光源、準分子雷射光源或遠紅 外線雷射光源。 β M 請Λ考® 1Ε ’接著，形成—電鍍種子層15G於盲孔結 =内與^層⑽的表面，其中形成—電_子層15〇 或鋅式為缝’而電_子層15G的材料例如是銅、鎳 -導著，透過電鍍種子層150而電鍍形成 Μη Γί 電層160將盲孔結構B1與銅落層 勺括制表面完全覆蓋。在本實施财，導電層160的材質 包括銅、銀、鎳、錫或鋁。 買 ❹種子接著，移除部份導電層160、部份電鍍 =15G及銅故層14G，以形 二電，表面。詳細而言.，在本實施例中，㈡ Γ=介電層12〇中，且導電結構13〇電性連 是，導電結構⑽的表面與3 雷#編义面實貝上切齊。此外，本實施例之移除部份導 請參考圖1H，接著，以—第二雷射L2在介電層12〇 201021652 yj〇\jy\j\jj 29453twf.doc/n 的表面形成一凹刻圖案126，其中凹刻圖案126與導電結 構130相連接。特別是，在本實施例中’當第二雷射L2 燒蝕具有這些觸媒顆粒122的介電層120時，在介電層120 的表面上形成凹刻圖案126的同時’一些觸媒顆粒122會 活化並裸露於凹刻圖案126的内面，而形成一活化層124。 圖1H中的這些觸媒顆粒122會以黑色或白色來表示觸媒 顆粒122是否被活化^黑色的觸媒顆粒122代表已活化的 • 觸媒顆粒122 (即活化層124)，而白色的觸媒顆粒122則 代表未活化的觸媒顆粒122。在本實施例中，第二雷射L2 為紫外線雷射光源。在其他實施例中，第二雷射L2亦可 為紅外線雷射光源、準分子雷射光源或遠紅外線雷射光源。 值得一提的是’本發明並不限定形成凹刻圖案126的 方法，雖然此處所提及之凹刻圖案126的形成方法具體化 為雷射燒餘’於其他實施例中，亦可以藉由電漿侧或機 械加工製程的方式來形成凹刻圖案126，其中機械加工製 藝 程更包括以水刀切割、噴砂或外型切割，此仍屬於本發明 可採用的技術方案，不脫離本發明所欲保護的範圍。 請參考圖II，最後’配置導電材料於凹刻圖案126内， 以形成-第二線路圖案17〇,其中第二線路圖案17〇藉由 導電結構130電性連接至第一線路_ 114。在本實施例 巾’形成第二線路圖s 170於凹刻圖案126内的方法包括 化學>儿積法。進一步而言，第二線路圖案170是藉由化學 沉積法形成於凹刻圖案126内的活化層124上，且這些第 二線路圖案170與介電層120的表面實質上切齊，換言一之， 201021652 ; 29453twf.doc/n 這些第二線路圖案170基本上可算是一種内埋式線路。至 此，線路板100已大致完成。 簡言之，本實施例之線路板製程，是先利用電鍍填孔 的方式於介電層120形成連接線路基材HQ之第一線路圖 案114的導電結構130，接著，以第二雷射L2於介電層 120的表面形成凹刻圖案126 ’之後，在利用化學沉積法來 形成埋入凹刻圖案12ό内的第二線路圖案17〇，其中第二 ❿ 線路圖案Π0藉由導電結構130電性連接至第一線路圖案 114，而完成具有高密度内連線之線路板1〇〇。 本實施例之線路板製程的步驟，可以避免受限分別於 凹刻圖案126内與盲孔結構B1中同時形成第二線路圖案 170與導電結構130時之填孔能力的限制與製程時間長等 問題。 此外，本實施例之介電層12〇具有多個觸媒顆粒122, 當照射第二雷射L2於介電層12〇表面的同時，部份的觸 媒顆粒122會被活化而形成活化I 124，目此可直接藉由 攀化學沉積法於凹刻圖案⑶内的活化層m上形成第二線 路，案170’進而也擴充了具有觸媒顆粒m之介電層12〇 於高密度内連線之線路板1〇〇上的應用範圍。 圖2A至圖2H繪示本發明之另一實施例之一種線路 f if °請先參考圖2A ’依照本實施例的線路板製程，首 f供一線路基材21。。線路基材21。具有-上表面212 ^ f 一線路圖* 214，其中第一線路圖案214位於上表 上，也就是說，第一線路圖案214可算是一種一般 15 201021652 29453twf.doc/n 線路（即非内埋式線路）。 值得一提的是，線路基材210的結構可以僅具有單一 線路層，或是具有多層線路層。也就是說，線路基材21〇 可以是單層線路基材、雙層線路基材或多層線路基材。在 本貫施例中，圖2A之線路基材21〇是以多個介電層（未 繪示）以及多個圖案化線路層（未繪示）交互堆疊所形成 的多層線路基材來進行說明。In one embodiment of the invention, the step of forming the dielectric layer is first, and then, the structure of the conductive cone is formed, and then (4) is formed on the wiring substrate, wherein 4 m is formed to constitute a conductive structure. In addition to the electrical electrical layer, in one embodiment of the invention, the above is formed by printing or threading. In one embodiment of the invention, a glue or silver paste. In summary, the present invention forms a conductive structure of the second wiring pattern of the connection line substrate prior to the dielectric layer, and forms an intaglio pattern embedding the second line pattern on the surface of the dielectric layer. The second line pattern is electrically connected to the first line pattern by the conductive structure to complete the circuit board having the high-density interconnection. Therefore, the circuit board process of the present invention can avoid the limitation of the hole filling ability and the long processing time when the second line pattern and the conductive structure are simultaneously formed in the recessed pattern and the blind hole structure, and can effectively shorten the problem. The production process of the circuit board further expands the application range of the circuit board with high-density interconnects. The above and other objects, features and advantages of the present invention will become more apparent < [Embodiment] FIG. 1A to FIG. 1 are diagrams showing a circuit board process according to an embodiment of the present invention. Referring first to FIG. 1A, in accordance with the circuit board process of the present embodiment, first, k is supplied to a wiring substrate 110. The circuit substrate 110 has an upper surface 112 and 201021652 0809003 29453twf.doc/n a first line pattern 114' wherein the first line pattern 114 is located on the upper surface 112, that is, the first line pattern 114 can be regarded as a general line. (ie non-embedded lines). It is worth mentioning that the structure of the wiring substrate Π0 can have only a single wiring layer ’ or a multilayer wiring layer. That is, the wiring substrate Π0 may be a single layer circuit substrate, a double layer circuit substrate, or a multi-layer circuit substrate. In the present embodiment, the wiring substrate 110 of FIG. 1 is illustrated by a multilayer wiring substrate formed by alternately stacking a plurality of dielectric layers (not shown) and a plurality of patterned wiring layers (not shown). Referring to FIG. 1A, a dielectric layer 120 is formed on the wiring substrate 110, wherein the dielectric layer 120 covers the upper surface 112 of the wiring substrate 11 and the first line pattern 114. In detail, in the present embodiment, the dielectric layer 120 includes a plurality of catalyst particles 122, and these catalyst particles 122 include a plurality of nano metal particles. The material of the catalyst particles 122 includes a transition metal complex compound, wherein the material of the transition metal complex compound may include a transition metal oxide, a transition metal nitride, a transition metal complex or a transition metal chelate, and these transition metals The material of the coordination compound is selected from the group consisting of zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, ruthenium, iron, manganese, chromium, molybdenum, tungsten, hunger, button and titanium. One of the materials. Further, 'these catalyst particles 122 are, for example, a plurality of metal oxide particles, a plurality of metal nitride particles, a plurality of metal complex particles, a plurality of metal chelate particles or a plurality of metal particles, and the catalysts Particles 122 11 201021652 0809 (WJ 29453twf.doc/n may be made of zinc, copper, silver, gold, ruthenium, niobium, n., silver, iron, fierce, chrome, turn, crane, Syria, New Zealand or titanium, or Any combination of these metals. That is, the metal atoms in the catalyst particles 122 may be zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, ruthenium, iron, manganese, molybdenum, Tungsten, vanadium, niobium or titanium, and these catalyst particles 122 may comprise any combination of these metal atoms. For example, these catalyst particles 122 are, for example, copper oxide, contact bimetallic nitride (c〇2M〇3Nx) particles. Or φ metal particles. ▲ It is worth mentioning that the present invention does not limit the material and type of the dielectric layer 12 ,, although the dielectric layer 12 此处 mentioned herein is embodied to include multiple touches, particles m, but in other embodiments, the material of the dielectric layer m may also be a surface The sub-polymer, the methyl polymer is selected from the group consisting of epoxy resins, modified epoxy resins, polyesters, acrylates, fluoropolymers, polyphenylene oxides, polyimines, phenolic resins, Polysulfone, alizarin polymer, Βτ resin, cyanate polyester, polyethylene, polycarbonate resin, propylene-butadiene _ m stupid ethylene copolymer, polyethylene terephthalate resin, polyparaphenylene a group consisting of diterpene® vinidine vinegar resin, liquid crystal south molecule, polyamidamine 6, nylon, copolypolyether, polyphenylene sulfide bond and cyclic olefin copolymer polymer, which still belong to the present invention The technical solution does not deviate from the scope of the present invention. Referring to FIG. 1C, a copper foil layer 140 is formed on the surface of the dielectric layer 120. In this embodiment, the steel foil layer 140 covers the dielectric layer. 120, can be regarded as a protection. Referring to FIG. 1D, next, a dielectric layer 201021652 29453twf.doc/n is formed on the copper foil layer 140 to form at least one copper layer. Blind hole structure B1 just extended to the younger-line pattern 114 (only the two sounds are cold in Fig. 1D) The blind hole structure B1 exposes a portion of the first line pattern 114 located on the line substrate 丄in. In the embodiment, the first shot L1 is an infrared laser light source. In other embodiments, the first part may also be ultraviolet light. Laser source, excimer laser source or far-infrared laser source. β M Please refer to ® 1Ε 'Next, form - electroplated seed layer 15G on the surface of the blind hole junction = inner layer and the layer (10), which form - electricity _ The sub-layer 15 or zinc is a slit and the material of the electro-sublayer 15G is, for example, copper or nickel-guided, and is electroplated by plating the seed layer 150 to form a layer Μ Γ 电 电 电 电 电 电 盲 盲 盲 盲 盲 盲 盲 盲 盲The surface is completely covered. In this implementation, the conductive layer 160 is made of copper, silver, nickel, tin or aluminum. After buying the seed, the conductive layer 160, part of the plating = 15G and the copper layer 14G are removed to form a second surface. In detail, in the present embodiment, (2) Γ = dielectric layer 12 ,, and the conductive structure 13 is electrically connected, the surface of the conductive structure (10) is aligned with the surface of the 3 ray. In addition, the removed portion of the embodiment is referred to FIG. 1H, and then a recess is formed on the surface of the dielectric layer 12〇201021652 yj〇\jy\j\jj 29453twf.doc/n by the second laser L2. The pattern 126 is engraved, wherein the intaglio pattern 126 is connected to the conductive structure 130. In particular, in the present embodiment, when the second laser L2 ablates the dielectric layer 120 having these catalyst particles 122, an intaglio pattern 126 is formed on the surface of the dielectric layer 120 while "some catalyst particles" 122 is activated and exposed to the inner face of the intaglio pattern 126 to form an active layer 124. The catalyst particles 122 in Fig. 1H will indicate whether the catalyst particles 122 are activated in black or white. The black catalyst particles 122 represent the activated • catalyst particles 122 (i.e., the activation layer 124), while the white contacts The media particles 122 then represent unactivated catalyst particles 122. In this embodiment, the second laser L2 is an ultraviolet laser light source. In other embodiments, the second laser L2 may also be an infrared laser source, a quasi-molecular laser source, or a far-infrared laser source. It is worth mentioning that 'the invention does not limit the method of forming the intaglio pattern 126, although the method of forming the intaglio pattern 126 mentioned herein is embodied as a laser burnout' in other embodiments, The intaglio pattern 126 is formed by a plasma side or a mechanical processing process, wherein the mechanical processing process further includes cutting with a water jet, sandblasting or external cutting, which still belongs to the technical solution that can be adopted by the present invention, without departing from the present invention. The scope of the invention to be protected. Referring to FIG. II, finally, a conductive material is disposed in the recess pattern 126 to form a second line pattern 17A, wherein the second line pattern 17 is electrically connected to the first line _114 by the conductive structure 130. The method of forming the second wiring pattern s 170 in the intaglio pattern 126 in the present embodiment includes a chemical > Further, the second line pattern 170 is formed on the active layer 124 in the recess pattern 126 by chemical deposition, and the second line patterns 170 are substantially aligned with the surface of the dielectric layer 120, in other words. , 201021652 ; 29453twf.doc / n These second line patterns 170 can basically be regarded as a buried line. Thus, the circuit board 100 has been substantially completed. In short, in the circuit board process of the present embodiment, the conductive structure 130 connecting the first line pattern 114 of the wiring substrate HQ is formed on the dielectric layer 120 by means of electroplating, and then the second laser L2 is used. After the recessed pattern 126 ′ is formed on the surface of the dielectric layer 120 , the second line pattern 17 埋 embedded in the recessed pattern 12 〇 is formed by a chemical deposition method, wherein the second 线路 line pattern Π 0 is electrically connected by the conductive structure 130 . The connection to the first line pattern 114 is completed, and the board 1 having the high-density interconnection is completed. The step of the circuit board process of the embodiment can avoid the limitation of the hole filling capability and the long processing time when the second line pattern 170 and the conductive structure 130 are simultaneously formed in the recessed pattern 126 and the blind hole structure B1. problem. In addition, the dielectric layer 12 of the present embodiment has a plurality of catalyst particles 122. When the second laser L2 is irradiated on the surface of the dielectric layer 12, part of the catalyst particles 122 are activated to form an activation I. 124. Thus, the second line can be formed directly on the active layer m in the recessed pattern (3) by the Pan chemical deposition method, and the 170' further expands the dielectric layer 12 having the catalyst particles m to a high density. The range of applications on the connected circuit board. 2A to 2H illustrate a circuit according to another embodiment of the present invention. f If °, referring to FIG. 2A', in accordance with the circuit board process of the present embodiment, the first f is supplied to a circuit substrate 21. . Line substrate 21. Having a top surface 212 ^ f a wiring pattern * 214, wherein the first line pattern 214 is located on the upper surface, that is, the first line pattern 214 can be regarded as a general 15 201021652 29453twf.doc / n line (ie, non-buried Line). It is worth mentioning that the structure of the wiring substrate 210 may have only a single wiring layer or a multilayer wiring layer. That is, the wiring substrate 21A may be a single-layer wiring substrate, a double-layer wiring substrate, or a multilayer wiring substrate. In the present embodiment, the circuit substrate 21A of FIG. 2A is a multilayer circuit substrate formed by alternately stacking a plurality of dielectric layers (not shown) and a plurality of patterned circuit layers (not shown). Description.
清參考圖2B ’接著’形成一介電層22〇於線路基材 21〇上，其中介電層220覆蓋線路基材210的上表面212 與第-線圖案214。詳細而言’在本實施例中，介電層22〇 包括多顆觸媒顆粒222，而這些觸媒顆粒222與前述實施 ^中ί觸媒雛122相同，在此不重複贅述之。當然，於 /、他=施例中，介電層212的材質亦可為高分子聚合物。 5月參考圖2C ’接著，形成一銅箔層240於介電層220 的表面上在本實施例中，銅箱層細覆蓋介電層no， 可視為一保護層。 9川昭月私一势2D接著’對形成有銅荡層240的介電層 ;、 —雷射U ’以形成至少一從銅箔層240延伸 -一路圖案214的盲孔結構B2(圖2D中僅示意地繪 □ π。其中盲孔結構B2暴露出位於線路基材210之 一 ΐί 部份第一線路圖案214。在本實施例中，第 雲：外線雷射光源。在其他的實施例中，第一 t ’、可為紫外線雷射光源、準分子雷射光源戋遠红 外線雷射光源。 卞田耵九源'-工 16 201021652 29453twf.doc/n 明參考圖2E，接著，填人—導電材料，於盲孔結構 B2中’以形成導電結構230，其中導電結構230的表面盘 銅箱層240的表面實質上切齊。在本實施例中，填入導/電 材料250於目孔結構B2的方式包括印刷，而導電材料 ，括金屬導電膏或高分子導電材料，其巾金屬導電膏可以 是銅膠、銀膠、碳膠、銅膏、銀膏、錫膏、或其他適合用 以導電的金屬材料。 在本實施例中，高分子導電材料包括複合型高分子導 θ材^或結翻高分子導電㈣。複合型高分子導電材料 疋由-般高分子材料與各種導電性㈣通過填充複合 =複合或層積複合等方式而製得，而複合型高分子導電 ς的種類包括有導電塑料、導電橡膠、導電塗料或導電膠 :劑，甚至也可以製成透明導電薄膜等。複合型高分子導 ^材料的性能與所選用導電填料的種類、用量、粒度、狀 及其在高分子材射的分散狀態有很大_係，其中 =常用的導電填料有碳黑、金屬粉、金屬羯片、金屬纖維、 2維等。另外，結構型高分子導電材料是指高分子結構 裝身或，過摻雜之後具有導電功能的高分子材料，其中所 ^用之高分子材料的種類包括有聚乙快材料、聚氮化硫、 ^比洛、聚苯硫_ (PPS)、聚酞賴化合物、聚苯胺、 塞吩等。按照導電原理’結構型高分子導電材料還可分 _電=導電高分子材料和離子導電高分子材料，其中電子 二電鬲分子材料的結構特點是具有線型或面型大共軛體 系，在熱或光的作用下通過共軛冗電子的活化而進行導 17 201021652 29453twf.doc/n 電電導率一般在半導體的範圍，而 類材料的導電性能明顯提高、例如在聚乙 碘’電導衬提冑12錄纽。又跡 德 化硫，在超低溫下可轉魏高分子超導體、。摻雜後的^ 声移除銅落層240，以暴露出介電 構細的表面高於介電層220Referring to FIG. 2B', a dielectric layer 22 is formed on the wiring substrate 21, wherein the dielectric layer 220 covers the upper surface 212 of the wiring substrate 210 and the first-line pattern 214. In detail, in the present embodiment, the dielectric layer 22A includes a plurality of catalyst particles 222, and these catalyst particles 222 are the same as those of the above-described embodiment, and will not be described again. Of course, in the /, he = embodiment, the material of the dielectric layer 212 may also be a high molecular polymer. Referring to FIG. 2C' in May, a copper foil layer 240 is formed on the surface of the dielectric layer 220. In this embodiment, the copper box layer is finely covered with the dielectric layer no, and can be regarded as a protective layer. 9 Chuan Zhaoyue private potential 2D followed by 'on the dielectric layer formed with the copper layer 240; - laser U' to form at least one from the copper foil layer 240 - one way pattern 214 blind hole structure B2 (Figure 2D Only π is schematically illustrated, wherein the blind hole structure B2 exposes a portion of the first line pattern 214 located at one of the line substrates 210. In this embodiment, the cloud: an external line laser source. In other embodiments In the first t', it can be an ultraviolet laser light source, an excimer laser light source, and a far-infrared laser light source. 卞田耵九源'-工16 201021652 29453twf.doc/n Refer to Figure 2E, and then fill in - a conductive material, in the blind via structure B2 'to form a conductive structure 230, wherein the surface of the surface copper copper layer 240 of the conductive structure 230 is substantially aligned. In this embodiment, the conductive/electrical material 250 is filled in The structure of the hole structure B2 includes printing, and the conductive material includes a metal conductive paste or a polymer conductive material, and the metal conductive paste of the towel metal may be copper glue, silver glue, carbon glue, copper paste, silver paste, solder paste, or other suitable. a metal material for conducting electricity. In this embodiment, a polymer guide The electric material includes a composite polymer conductive material θ material or a junction polymer conductive material (IV). The composite polymer conductive material is made of a general polymer material and various electrical conductivity (4) by filling composite = composite or laminated composite. The type of composite polymer conductive bismuth includes conductive plastic, conductive rubber, conductive paint or conductive adhesive: even transparent conductive film, etc. The performance of the composite polymer conductive material and the selected conductive material The type, amount, particle size, shape of the filler and its dispersion state in the polymer material are very large, among which the commonly used conductive fillers are carbon black, metal powder, metal bismuth, metal fiber, 2D, etc. The structural polymer conductive material refers to a polymer material having a polymer structure or a conductive material having a conductive function after overdoping, wherein the type of the polymer material used includes a polyethylene fast material, polysulfur nitride, ^Bilo, polyphenylene sulfide (PPS), polypyridyl compounds, polyaniline, phenophene, etc. According to the principle of conductivity, structural polymer conductive materials can also be divided into _ electricity = conductive polymer materials and ion conductive The polymer material, wherein the electronic dielectron molecular material has a structural characteristic of having a linear or planar large conjugated system, and is guided by the activation of conjugated redundant electrons under the action of heat or light 17 201021652 29453twf.doc/n The conductivity is generally in the range of semiconductors, and the conductivity of the materials is obviously improved, for example, in the polyethyl iodine 'conducting lining 12 。 。 。 。 。 。 。 。 又 又 又 又 又 , , , , , , , , , , , , , , , , , , The subsequent sound removes the copper falling layer 240 to expose the dielectric fine surface to be higher than the dielectric layer 220
請參考圖2G’接著，以一第二雷射^在介電層22〇 =面形成凹刻圖案226 ’其中凹刻圖案挪與導電結 構23〇相連接。特別是，在本實施例中，當第二雷射 燒餘具有這些觸媒顆粒222的介電層220日夺，在S層220 的表面上形成凹刻圖案226的同時，—些觸媒顆粒2曰22合 活化並稞露於凹刻圖案226的内面，而形成—活化層224。 圖犯中的這些觸媒顆粒222會以黑色或白色來表示觸媒 顆粒222是否被活化。黑色的觸媒顆粒222代表已活化的 觸媒顆粒222 (即活化層224)，而白色的觸媒顆粒222則 代表未活化的觸媒顆粒222。在本實施例中，第二雷射L2 為紫外線雷射光源。在其他實施例中，第二雷射L2亦可 為紅外線雷射光源、準分子雷射光源或遠紅外線雷射光源。 請參考圖2H，最後，配置導電材料於凹刻圖案226 内，以形成一第二線路圖案260’其中第二線路圖案26〇 藉由導電結構230電性連接至第一線路圖案214。在本實 施例中，形成第二線路圖案260於凹刻圖案226内的方法 包括化學沉積法。進一步而言，第二線路圖案26〇是藉由 18 29453twf.doc/n 201021652Referring to FIG. 2G', next, a second laser is used to form an intaglio pattern 226' on the dielectric layer 22's surface, wherein the intaglio pattern is connected to the conductive structure 23'. In particular, in the present embodiment, when the second laser burns away the dielectric layer 220 having the catalyst particles 222, an intaglio pattern 226 is formed on the surface of the S layer 220, and some of the catalyst particles are formed. 2曰22 is activated and exposed to the inner surface of the intaglio pattern 226 to form an active layer 224. These catalyst particles 222 in the figure will indicate whether the catalyst particles 222 are activated in black or white. The black catalyst particles 222 represent the activated catalyst particles 222 (i.e., the activation layer 224), while the white catalyst particles 222 represent the unactivated catalyst particles 222. In this embodiment, the second laser L2 is an ultraviolet laser light source. In other embodiments, the second laser L2 may also be an infrared laser source, a quasi-molecular laser source, or a far-infrared laser source. Referring to FIG. 2H, finally, a conductive material is disposed in the recess pattern 226 to form a second line pattern 260', wherein the second line pattern 26 is electrically connected to the first line pattern 214 by the conductive structure 230. In the present embodiment, the method of forming the second line pattern 260 in the intaglio pattern 226 includes a chemical deposition method. Further, the second line pattern 26〇 is by 18 29453twf.doc/n 201021652
V/OV^WJ 化學沉積法形成於凹刻圖案226内的活化層224上，且這 些第二線路圖案260與介電層220的表面實質上切齊，換 言之，這些第二線路圖案260基本上可算是一種内埋式線 路。至此，線路板200已大致完成。 簡言之，本實施例之線路板製程’是先利用印刷的方 式於介電層220形成連接線路基材210之第一線路圖案 214的導電結構230 ’接著’以第二雷射L2於介電層220 % 的表面形成凹刻圖案226，之後，在利用化學沉積法來形 成埋入凹刻圖案226内的第二線路圖案260，其中第二線 路圖案260藉由導電結構230電性連接至第一線路圖案 214,而完成具有高密度内連線之線路板2〇〇。 本實施例之線路板製程的步驟，可以避免受限分別於 凹刻圖案226内與盲孔結構B2中同時形成第二線路圖案 260與導電結構230時之填孔能力的限制與製程時間長等 問題。 、 ❹ 冬此外，本實施例之介電層220具有多個觸媒顆粒222, 虽照射第二雷射L2於介電層22〇表面的同時，部份的觸 媒顆粒222會被活化而形成活化層224，因此可直接藉由 化學〉儿積法於凹刻圖案226内的活化層224上形成第二線 路，，260’進而也擴充了具有觸媒顆粒222之介電層 於南密度内連線之線路板2⑼上的應用範圍。 圖3A至圖3E繪示本發明之另—實施例之—種線路板 π先參考圖3A’依照本實施例的線路板製程，首先， '、一線路基材31G。線路基材31〇具有-上表面312盘 19 201021652 yj〇\jy\jvj 29453twf.doc/n -第-線路圖案314 ’其中第—線路圖案314位於上表面 312上，也就是說，第一線路圖案314可算是一種一般線 路（即非内埋式線路）。 值得一提的是，線路基材31〇的結構可以僅具有單一 線路層i或疋具有多層線路層。也就是說，線路基材310 可以是單層線路基材、雙層線路基材或多層線路基材。在 本，轭例中，圖3A之線路基材31〇是以多個介電層（未 ❹ 繪示）以及多個圖案化線路層（未繪示）交互堆疊所形成 的多層線路基材來進行說明。 切參考圖3B，接著，形成一導電錐33〇，於第一線路 圖案314上。在本實施例中，形成導電錐33〇，的方法包括 印截打線’而導魏330,的材質包_膠或銀膠。 凊參考圖3C，接著’壓合一介電層32〇於線路基材 310上，其中導電錐33〇,貫穿介電層32〇，以構成 ，330。詳細而言，由於導電錐33〇，具有相當硬度因:匕 鬱 介電層320於線路基材31〇上時，導電錐33〇,的尖端 承二穿介電層320 ’且導電錐33〇,的尖端會因壓合而變為 十的，即構成内埋於介電層320内的導電結構33〇。 在本實施例中，介電層32〇包括多顆觸媒顆粒322， ，些觸媒顆粒322與前述實施例中的觸媒顆粒122或 =粒222相同，在此不重複贅述之。當然’於其他實施 例T ’介電層320的材質亦可為高分子聚合物。 的矣:參考圖3D ’接著’以—第二雷射U在介電層320 的表面形成—凹刻圖案326’其中凹刻圖案326與導電結 20 201021652 29453twf.doc/n 構330相連接。特別是，在本實施例中，t第二雷射L2 燒蝕具有這些觸媒顆粒322的介電層32〇時，在介電層32〇 的表面上形成凹刻圖案326的同時，一些觸媒顆粒322會 活化並裸露於凹刻圖案326的内面，而形成一活化層324。 圖3D中的這些觸媒顆粒322會以黑色或白色來表示觸媒 顆粒322是否被活化。黑色的觸媒顆粒322代表已活化的 觸媒顆粒322 (即活化層324) ’而白色的觸媒顆粒322則 φ 代表未活化的觸媒顆粒322。在本實施例中，第二雷射L2 為紫外線雷射光源。在其他實施例中，第二雷射L2亦可 為紅外線雷射光源、準分子雷射光源或遠紅外線雷射光源。 請參考圖3E，最後，配置導電材料於凹刻圖案326 内’以形成一第二線路圖案340，其中第二線路圖案340 藉由導電結構330電性連接至第一線路圖案314。在本實 施例中’形成第二線路圖案340於凹刻圖案326内的方法 包括化學沉積法。進一步而言’第二線路圖案340是藉由 化學沉積法形成於凹刻圖案326内的活化層324上，且這 ❹ 些第二線路圖案340與介電層320的表面實質上切齊，換 言之’這些第二線路圖案340基本上可算是一種内埋式線 路。至此，線路板300已大致完成。 簡言之，本實施例之線路板製程，是先利用印刷或打 線的方式於線路基材310之第一線路圖案314上形成導電 錐330’，接著，壓合介電層320於線路基材310上以構成 導電結構330，之後’以第二雷射L2於介電層320的表面 形成凹刻圖案326，最後，在利用化學沉積法來形成埋入 21 29453twf.d〇c/a 201021652 uouyuuj 凹刻圖案326内的第二線路圖案340 ’其中第二線路圖案 340藉由導電結構330電性連接至第一線路圖案314,而完 成具有高密度内連線之線路板300。V/OV^WJ chemical deposition is formed on the active layer 224 in the recessed pattern 226, and these second line patterns 260 are substantially aligned with the surface of the dielectric layer 220, in other words, the second line patterns 260 are substantially Can be regarded as a buried line. At this point, the circuit board 200 has been substantially completed. In short, the circuit board process of the present embodiment is to first form a conductive structure 230 of the first line pattern 214 of the connection line substrate 210 on the dielectric layer 220 by printing, and then to use the second laser L2. 220% of the surface of the electrical layer forms an intaglio pattern 226. Thereafter, a second line pattern 260 embedded in the recessed pattern 226 is formed by chemical deposition, wherein the second line pattern 260 is electrically connected to the conductive structure 230 to The first line pattern 214 completes the circuit board 2 with high density interconnects. The step of the circuit board process of the embodiment can avoid the limitation of the hole filling capability and the long processing time when the second line pattern 260 and the conductive structure 230 are simultaneously formed in the recessed pattern 226 and the blind hole structure B2, respectively. problem. In addition, the dielectric layer 220 of the present embodiment has a plurality of catalyst particles 222, and while the second laser L2 is irradiated on the surface of the dielectric layer 22, part of the catalyst particles 222 are activated to form. The activation layer 224 can thus form a second line directly on the active layer 224 in the recess pattern 226 by chemical synthesis, and 260' further expands the dielectric layer having the catalyst particles 222 into the south density. The range of applications on the connected circuit board 2 (9). 3A to 3E illustrate a circuit board π according to another embodiment of the present invention. Referring to FIG. 3A', in accordance with the circuit board process of the present embodiment, first, ', a line substrate 31G. The line substrate 31 has a top surface 312 disk 19 201021652 yj〇\jy\jvj 29453twf.doc/n - a first line pattern 314 'where the first line pattern 314 is located on the upper surface 312, that is, the first line Pattern 314 can be considered a general line (ie, a non-embedded line). It is worth mentioning that the structure of the wiring substrate 31 can have only a single wiring layer i or a multilayer wiring layer. That is, the wiring substrate 310 may be a single-layer wiring substrate, a two-layer wiring substrate, or a multilayer wiring substrate. In the present invention, the circuit substrate 31A of FIG. 3A is a multilayer wiring substrate formed by alternately stacking a plurality of dielectric layers (not shown) and a plurality of patterned circuit layers (not shown). Be explained. Referring to Fig. 3B, a conductive cone 33 is formed on the first line pattern 314. In the present embodiment, the method of forming the conductive cone 33A includes a stamping of the wire and a material of the package 330. Referring to Figure 3C, a dielectric layer 32 is then laminated to the wiring substrate 310, wherein the conductive cone 33 turns through the dielectric layer 32 to form 330. In detail, since the conductive cone 33 〇 has a considerable hardness due to the fact that the dielectric layer 320 is on the line substrate 31, the conductive cone 33 〇 has a tip end which penetrates the dielectric layer 320 ′ and the conductive cone 33 〇 The tip of the yoke becomes ten due to the nip, that is, the conductive structure 33 内 embedded in the dielectric layer 320. In this embodiment, the dielectric layer 32 includes a plurality of catalyst particles 322, and the catalyst particles 322 are the same as the catalyst particles 122 or the particles 222 in the foregoing embodiment, and the details are not described herein. Of course, the material of the dielectric layer 320 of the other embodiment T may also be a high molecular polymer. Referring to Fig. 3D', then, a second laser U is formed on the surface of the dielectric layer 320 to form an intaglio pattern 326' in which the intaglio pattern 326 is connected to the conductive junction 20201021652 29453twf.doc/n structure 330. In particular, in the present embodiment, when the second laser L2 ablates the dielectric layer 32 having the catalyst particles 322, an intaglio pattern 326 is formed on the surface of the dielectric layer 32, while some touches The media particles 322 are activated and exposed to the inner face of the intaglio pattern 326 to form an activation layer 324. These catalyst particles 322 in Fig. 3D will indicate whether the catalyst particles 322 are activated in black or white. The black catalyst particles 322 represent the activated catalyst particles 322 (i.e., the activation layer 324) and the white catalyst particles 322 represent the unactivated catalyst particles 322. In this embodiment, the second laser L2 is an ultraviolet laser light source. In other embodiments, the second laser L2 may also be an infrared laser source, a quasi-molecular laser source, or a far-infrared laser source. Referring to FIG. 3E, finally, a conductive material is disposed in the recess pattern 326 to form a second line pattern 340, wherein the second line pattern 340 is electrically connected to the first line pattern 314 by the conductive structure 330. The method of forming the second line pattern 340 in the intaglio pattern 326 in the present embodiment includes a chemical deposition method. Further, the 'second line pattern 340 is formed on the active layer 324 in the recess pattern 326 by chemical deposition, and the second line patterns 340 are substantially aligned with the surface of the dielectric layer 320, in other words, These second line patterns 340 are basically a buried line. At this point, the circuit board 300 has been substantially completed. In short, in the circuit board process of the embodiment, the conductive cone 330' is formed on the first line pattern 314 of the circuit substrate 310 by printing or wire bonding, and then the dielectric layer 320 is pressed onto the circuit substrate. The conductive structure 330 is formed on the 310, and then the concave pattern 326 is formed on the surface of the dielectric layer 320 by the second laser L2. Finally, the buried surface is formed by chemical deposition. 21 29453twf.d〇c/a 201021652 uouyuuj The second line pattern 340' in the indented pattern 326 is in which the second line pattern 340 is electrically connected to the first line pattern 314 by the conductive structure 330 to complete the circuit board 300 having the high density interconnect.
本實施例之線路板製程的步驟，可以避免受限於盲孔 填孔能力的限制與製程時間長等問題。此外，本實施例之 介電層320具有多個觸媒顆粒322,當照射第二雷射L2於 介電層320表面的同時，部份的觸媒顆粒322會被活化而 形成活化層324，因此可直接藉由化學沉積法於凹刻圖案 326内的活化層324上形成第二線路圖案340,進而也擴充 了具有觸媒顆粒322之介電層320於高密度内連線之線路 板300上的應用範圍。 綜上所述，本發明先於介電層形成連接線路基材之 '線路圖案的導電結構’然後，以雷射於介電層的表面 成了埋入第—線路圖案的凹刻圖案，其中第二線路圖案 由導電結構電細接至第—線關案，而完成具有高密 内連線之線路b因此’本發明之線路板製程，可以避 圖案内與盲孔結構中同時形成第二線路 進而二填孔能力的限制與製程時間長等問題 鏟=/、有鬲密度内連線之線路板的應用範圍。 太恭Γ 發明已以實施例揭露如上，然其並非用以 本i明之技術領域中具有通常知識者，在不脫; 發明之保護圍内，當可作些許之更動與潤飾，I 蔓耗圍备視後附之申請專利範圍所界定者為準 22 201021652 \jkj\j y\j\ju 2945 3 twf. doc/π 【圖式簡單說明】 圖1A至圖II繪示本發明之一實施例之一種線路板製 程。 圖2Α至圖2Η繪示本發明之另一實施例之一種線路 板製程。 圖3Α至圖3Ε繪示本發明之另一實施例之一種線路板 製程。 ❹ 【主要元件符號說明】 100、200、300 :線路板 110、210、310 :線路基材 112、212、312 :上表面 114、214、314 :第一線路圖案 120、220、320 :介電層 122、222、322 :觸媒顆粒 124、224、324 :活化層 126、226、326 :凹刻圖案 g 130、230、330 :導電結構 140、240 :銅箔層 150 :電鍍種子層 160 :導電層 170、260、340 :第二線路圖案 250 :導電材料 330’ ：導電錐The circuit board process of the embodiment can avoid the limitation of the blind hole filling ability and the long process time. In addition, the dielectric layer 320 of the present embodiment has a plurality of catalyst particles 322. When the second laser light L2 is irradiated on the surface of the dielectric layer 320, part of the catalyst particles 322 are activated to form the active layer 324. Therefore, the second line pattern 340 can be formed directly on the active layer 324 in the recess pattern 326 by chemical deposition, thereby further expanding the dielectric layer 320 having the catalyst particles 322 on the high density interconnect wiring board 300. The scope of application. In summary, the present invention forms a 'wire pattern conductive structure' of the connection line substrate prior to the dielectric layer, and then, by laser exposure on the surface of the dielectric layer, an intaglio pattern embedding the first line pattern is formed. The second circuit pattern is electrically connected to the first line to the first line, and the line with the high density interconnection is completed. Therefore, the circuit board process of the present invention can avoid forming the second line simultaneously in the pattern and the blind hole structure. Furthermore, the limitation of the two hole-filling capabilities and the long process time are shovel =/, and the application range of the circuit board with the density of the interconnect. The invention has been disclosed above by way of example, but it is not intended to be used in the technical field of the present invention, and it is not necessary to leave it; in the protection enclosure of the invention, when a little change and retouching can be made, I The definition of the patent application scope is as follows: 201021652 \jkj\jy\j\ju 2945 3 twf. doc/π [Simplified Schematic] FIGS. 1A to II illustrate an embodiment of the present invention. A circuit board process. 2A to 2B illustrate a circuit board process according to another embodiment of the present invention. 3A to 3D illustrate a circuit board process according to another embodiment of the present invention. ❹ [Main component symbol description] 100, 200, 300: circuit board 110, 210, 310: wiring substrate 112, 212, 312: upper surface 114, 214, 314: first wiring pattern 120, 220, 320: dielectric Layers 122, 222, 322: Catalyst particles 124, 224, 324: activation layers 126, 226, 326: intaglio patterns g 130, 230, 330: conductive structures 140, 240: copper foil layer 150: plating seed layer 160: Conductive layer 170, 260, 340: second line pattern 250: conductive material 330': conductive cone
Bl、B2 :盲子L結構 L1 :第一雷射 L2 :第二雷射 23Bl, B2: blind substructure L1: first laser L2: second laser 23