201027708 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種雙向矽控整流器（SCR，Silicon Controlled Rectifier)靜電防護元件（ESD，Electro-Static Discharge device)，特別是指一種可在正負電壓端反接時或 正電壓端接觸到負電壓時仍能提供防護的靜電防護元件。 【先前技術】 積體電路中經常需要使用到靜電防護元件，在電路對 外接腳處接收到過高電壓時先行放電，以避免損害電路内 部元件。靜電防護元件的其中一種作法是使用矽控整流 器，如第1圖所示，在P型基體1〇〇上設置N型井區11與 P型井區21 ’在N型井區11内設置高濃度p+摻雜區13與 N+摻雜區15、在P型井區21内設置高濃度P+摻雜區23 與N+掺雜區25 ’構成圖示的珍控整流器，其中由p+摻雜 區13經N+摻雜區15、N型井區11至p型井區21構成pnp 電晶體，而由N型井區11經p型井區21至N+掺雜區25 構成NPN電晶體。對外的連接墊PAD電連接至P+摻雜區 13和N+摻雜區15，對外的接地墊GND電連接至p+摻雜 區23和N+摻雜區25，如此，當連接墊PAD接收到高電 壓時，可啟動此石夕控整流器，將電流導引至接地墊GN〇排 除。 然而’在某些應用狀況如電池充電器中，使用者經常 會誤接正負電壓端，亦即誤將接地墊GND連接至正電壓， 而將連接墊PAD接地。此時，上述先前技;|标將因順向導通 201027708 的二極體產生過高的電流，而造成靜電防護元件受損。 此外’上述先前技術中，當連接墊PAD接收到負電壓 時，由N+摻雜區15、N型井區11至P型基體100的接面 二極體將會順偏導通，造成自基板100抽取電流自連接塾 PAD流失的現象’不但耗損能量’且可能因此電流引發互 鎖效應（latch-up) ’使電路内部元件無法正常工作。一般而 言’靜電防護元件在設計上並未預期連接墊PAD會接觸到 負電壓’但當電路係用以推動電源電路中之功率電晶體開 關時’即可能因功率電晶體開關的切換震盪(switching ringing)而產生瞬間的負電壓。 有鑑於此，本發明即針對上述先前技術之不足，提出 一種可在連接墊PAD和接地墊GND反接時、或連接墊ΡΑ〇 接觸到負電壓時，仍能提供防護的雙向矽控整流器靜電防 護元件。 【發明内容】 本發明目狀-在提供-種雙向雜錢时電防護 元件。 為達上述之目的，就其中一個觀點言，本發明提供了 -種雙向石夕控整流器靜電防護元件，包含：一個基體；位 於該基體内之具有第-傳導型_第—井區，此井區為浮 接；位於該第-井區内之具有第二傳導型g的第二與第三 井區’此第二與第三井區彼此分離；位於該第二井區内之 具有第-傳導㈣的第-高濃度摻雜區和具有第二傳導型 201027708 態的第二高濃度摻雜區；以及位於該第三井區内之具有第 -傳導型態的第三高濃度摻祕和具有第二傳導鶴的第 四高濃度摻雜區。 上述隔離式矽控整流器靜電防護元件中，可在第一井 區和第二井區及/或第三井區的交界處設置另_高濃度摻 雜區’此高:¾度摻雜區可為第—或第二傳導型態。或是， 可在第一井區内，距離第一井區和第二井區交界處一段預 設距離處設置第-料鶴之另—高歧摻祕，或在第 -井區内’距離第—井區和第三井區交界處一段預設距離 處設置第-傳導型態之另—高濃度摻雜區。或是，可在第 二井區内，距離第一井區和第二井區交界處一段預設距離 處設置第二傳導型態之另—高濃度摻縣。或是，可在第 三井區内’距離第-井區和第三井區㈣處—段預設距離 處設置第二傳導型態之另一高濃度摻雜區。 底下藉由具體實施例詳加說明，當更容易瞭解本發明 之目的、技術内容、特點及其所達成之功效。 【實施方式】 本說明書之圖示均屬示意，其維度並未完全按照比例 繪示。 °月參考第2圖與第3圖，其中顯示本發明的第一個實 施例。本實施例中，係在基體内設置一個浮接(£1〇站丨11幻的N 型井區31 ’且在N型井區31内設置了 P型井區32與33 ; P塑井區32與33内分別設置了高濃度p+掺雜區23與N+ 7 201027708 摻雜Q 25、和1%丨辰度p+捧雜區13與N+換雜區15。如第2 圖所示，當連接墊PAD接收到高正電壓時，由p+摻雜區 13、1>型井區33、；^型井區31、？型井區32、:^+摻雜區25 構成的PNPN矽控整流器將被觸發，提供放電路徑將高電 壓所致電流導引排除。另一方面如第3圖所示，當接地墊 GND接收到高正電壓時，由P+摻雜區23、p型井區32、n 型井區31、P型井區33、N+摻雜區15構成的PNPN矽控 整流器將被觸發，提供另一方向的放電路徑將高電壓所致 電流導引排除。此外’如連接墊PAD或接地墊gnd接觸 到負電壓’該負電壓也不致對電路造成影響。因此，無論 連接墊PAD和接地墊GND如何連接，本發明的靜電防護 元件均可充分提供靜電防護功能。 第4圖顯示本發明的另一個實施例。本實施例中，在n 型井區31和P型井區32、33的交界處分別設置了高濃度 的N+摻雜區34、35。N+摻雜區34、35的設置目的是調整 靜電防護元件的觸發電壓。詳言之，由N型井區31和p型 井區32、33所構成的接面’其崩潰導通所需的電壓較高， 例如約在40V左右；若提供N+摻雜34、35，則可透過N+ 摻雜區34、35和P型井區32、33的接面有效降低崩潰電 壓至例如12-15V左右，使矽控整流器在較低的電壓即開始 導通，啟動靜電防護功能。 第5圖顯示與第4圖相似的實施例’本實施例中係在N 型井區31和P型井區32、33的交界處設置高濃度的p+摻 雜區36、37。下+摻雜區36、37的設置目的同樣是為了調整 201027708 靜電防護元件的觸發電壓。由N型井區31和p+雜區 36、37所構成的接面，囉可降低赌，峨早啟動 靜電防護功能。 第6圖顯示本發明的另一個實施例。本實施例中，N+ 摻雜區34、35並非設置在N型井區31和p型井區、％ 的交界處’而是與其相距一段預設距離d。根據距離d的長 度’可將靜電P讀it件的觸發電壓適當調整至介於第2圖 與第4圖之間的範圍。 第7圖顯示本發明的另一個實施例。本實施例中，p+ 摻雜區36、37並非設置在N型井區31和p型井區％％ 的交界處，而是與其相距一段預設距離(1，。根據距離d， 的長度’可將靜電防護元件的觸發電壓適當調整至介於第2 圖與第5圖之間的範圍 以上已針對較佳實施例來說明本發明，唯以上所述 者’僅係為使熟悉本技術者易於了解本發明的内容而已， 並非用來限定本發明之權利範圍。在本發明之相同精神 下’熟悉本技術者可以思及各種等效變化。例如，N+換雜 區34、35或P+摻雜區36、37並不一定需要對稱設置，而 可僅設置其一；第6圖中，N+摻雜區34、35可以合而為一； 或是，同時設置N+摻雜區34、35之一和P+摻雜區36、37 之一 ’等等。以上種種，均應包含在本發明的範圍之内。 【圖式簡單說明】 第1圖為先前技術之矽控整流器靜電防護元件的剖面圖。 201027708 第2圖至第7圖示出本發明的數個實施例的剖面示意圖。 【主要元件符號說明】 11 N型井區 13 P+掺雜區 15 N+摻雜區 21 P型井區 23 P+摻雜區 25 N+摻雜區 31 N型井區 32, 33 P型井區 34, 35 N+摻雜區 36,37 P+掺雜區 100基體 GND接地墊 PAD連接墊201027708 IX. Description of the Invention: [Technical Field] The present invention relates to a SCR (Silicon Controlled Rectifier) Electrostatic Discharge Device (ESD), in particular, a positive and negative voltage A protective ESD protection element is provided when the terminal is reversed or when the positive voltage terminal is exposed to a negative voltage. [Prior Art] It is often necessary to use an ESD protection component in an integrated circuit to discharge first when an excessive voltage is received at the external pin of the circuit to avoid damaging the internal components of the circuit. One of the electrostatic protection components is to use a tamper-controlled rectifier. As shown in Fig. 1, an N-type well region 11 and a P-type well region 21' are disposed on the P-type substrate 1 在 in the N-type well region 11 The concentration p+ doping region 13 and the N+ doping region 15, and the high-concentration P+ doping region 23 and the N+ doping region 25' are disposed in the P-type well region 21 to constitute a illustrated control rectifier, wherein the p+ doping region 13 The N+ doping region 15, the N-type well region 11 to the p-type well region 21 constitute a pnp transistor, and the N-type well region 11 constitutes an NPN transistor through the p-type well region 21 to the N+ doping region 25. The external connection pad PAD is electrically connected to the P+ doping region 13 and the N+ doping region 15, and the external ground pad GND is electrically connected to the p+ doping region 23 and the N+ doping region 25, so that when the connection pad PAD receives the high voltage At this time, the rock-controlled rectifier can be activated to guide the current to the grounding pad GN〇. However, in some applications, such as battery chargers, the user often mistakenly connects the positive and negative voltage terminals, that is, the ground pad GND is connected to a positive voltage, and the connection pad PAD is grounded. At this time, the above-mentioned prior art;|the standard will cause excessive current to the diode of the 201027708, causing damage to the ESD protection component. In addition, in the above prior art, when the connection pad PAD receives a negative voltage, the junction diodes of the N+ doping region 15, the N-type well region 11 to the P-type substrate 100 will be turned on, resulting from the substrate 100. The phenomenon that the current is drained from the connection 塾PAD 'not only consumes energy' and may therefore cause the latch-up of the current to make the internal components of the circuit not work properly. In general, 'the ESD protection element is not designed to contact the PAD to contact the negative voltage' but when the circuit is used to push the power transistor switch in the power circuit, it may be oscillated due to the switching of the power transistor switch ( Switching ringing) produces an instantaneous negative voltage. In view of the above, the present invention is directed to the above-mentioned deficiencies of the prior art, and proposes a two-way controlled rectifier static electricity that can provide protection when the connection pad PAD and the ground pad GND are reversed, or when the connection pad contacts a negative voltage. Protective element. SUMMARY OF THE INVENTION The object of the present invention is to provide an electric protection element when providing two-way miscellaneous money. In order to achieve the above object, in one aspect, the present invention provides a two-way stone-controlled rectifier electrostatic protection component comprising: a substrate; a first-conducting-first well region located in the matrix, the well The zone is floating; the second and third well zones having the second conductivity type g in the first well zone are separated from each other; the second well zone is separated from each other; Conducting (four) a first high concentration doped region and a second conductive type 201027708 second high concentration doped region; and a third high concentration doping and having a first conductive type in the third well region A fourth high concentration doped region having a second conducted crane. In the above-mentioned isolated 矽-controlled rectifier electrostatic protection component, another _ high-concentration doping zone may be disposed at the boundary between the first well zone and the second well zone and/or the third well zone, and the height: 3⁄4 degree doping zone may be It is the first or second conductivity type. Alternatively, in the first well zone, a certain distance from the first well zone and the second well zone may be set at a predetermined distance from the first well zone to the first well zone, or in the first well zone. A first-conducting type of high-concentration doping region is disposed at a predetermined distance from the junction of the first well zone and the third well zone. Alternatively, another high-concentration doping county of the second conductivity type may be disposed at a predetermined distance from the junction of the first well zone and the second well zone in the second well zone. Alternatively, another high-concentration doped region of the second conductivity type may be disposed at a predetermined distance from the first well region and the third well region (four) in the third well region. The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments. [Embodiment] The illustrations of the present specification are schematic, and the dimensions thereof are not drawn to scale. Referring to Figures 2 and 3, the first embodiment of the present invention is shown. In this embodiment, a floating connection is provided in the base body (the N-type well area 31 ' of the station 1 且 11 幻 11 and the P-type well area 32 and 33 are set in the N-type well area 31; P plastic well area 32 and 33 respectively set a high concentration p + doped region 23 and N + 7 201027708 doped Q 25, and 1% 丨 度 p + 杂 区 13 and N + change region 15 as shown in Figure 2, when connected When the pad PAD receives a high positive voltage, the PNPN controlled rectifier composed of the p+ doped region 13, 1> shaped well region 33, the ^ shaped well region 31, the ? shaped well region 32, and the + + doped region 25 will Triggered, providing a discharge path to exclude current guidance caused by high voltage. On the other hand, as shown in FIG. 3, when the ground pad GND receives a high positive voltage, the P+ doping region 23, the p-type well region 32, The PNPN controlled rectifier composed of the n-type well 31, the P-type well 33, and the N+-doped region 15 will be triggered to provide a discharge path in the other direction to exclude the current guidance caused by the high voltage. In addition, such as the connection pad PAD Or the ground pad gnd is in contact with the negative voltage 'this negative voltage does not affect the circuit. Therefore, the electrostatic protection element of the present invention can be charged regardless of how the connection pad PAD and the ground pad GND are connected. An electrostatic protection function is provided. Another embodiment of the present invention is shown in Fig. 4. In the present embodiment, a high concentration N+ doping region 34 is provided at the junction of the n-type well region 31 and the P-type well region 32, 33, respectively. 35. The N+ doping regions 34, 35 are arranged to adjust the trigger voltage of the ESD element. In detail, the junction formed by the N-type well region 31 and the p-type well region 32, 33 is collapsed. The required voltage is relatively high, for example, about 40V; if the N+ doping 34, 35 is provided, the junction voltage of the N+ doped regions 34, 35 and the P-type well regions 32, 33 can be effectively reduced to, for example, 12- Around 15V, the voltage-controlled rectifier starts to conduct at a lower voltage, and activates the electrostatic protection function. Fig. 5 shows an embodiment similar to that of Fig. 4, which is in the N-type well region 31 and the P-type well region in this embodiment. The high-concentration p+ doping regions 36, 37 are disposed at the junction of 32 and 33. The lower + doping regions 36, 37 are also set to adjust the trigger voltage of the 201027708 ESD protection component. The N-type well region 31 and the p+ miscellaneous The junctions formed by the zones 36 and 37 can reduce the gambling and activate the electrostatic protection function early. Figure 6 shows the present. Another embodiment of the present invention. In this embodiment, the N+ doping regions 34, 35 are not disposed at the junction of the N-type well region 31 and the p-type well region, %, but are spaced apart from each other by a predetermined distance d. The length d of d can appropriately adjust the trigger voltage of the electrostatic P reading device to a range between the second and fourth figures. Fig. 7 shows another embodiment of the present invention. In this embodiment, p+ doping The miscellaneous zones 36, 37 are not disposed at the junction of the N-type well zone 31 and the p-type well zone, but are at a predetermined distance (1, 1). The invention can be described with respect to the preferred embodiment by appropriately adjusting the trigger voltage of the ESD element to a range between the second and fifth figures according to the length d of the distance d, except that the above is only The scope of the present invention is not intended to limit the scope of the present invention. In the same spirit of the invention, various equivalent variations can be considered by those skilled in the art. For example, the N+ doping regions 34, 35 or the P+ doping regions 36, 37 do not necessarily need to be symmetrically arranged, but only one of them may be provided; in FIG. 6, the N+ doping regions 34, 35 may be combined into one; or Yes, one of the N+ doping regions 34, 35 and one of the P+ doping regions 36, 37 are set simultaneously. All of the above should be included in the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an electrostatic protection element of a prior art controlled rectifier. 201027708 Figures 2 through 7 show schematic cross-sectional views of several embodiments of the present invention. [Main component symbol description] 11 N-type well region 13 P+ doped region 15 N+ doped region 21 P-type well region 23 P+ doped region 25 N+ doped region 31 N-type well region 32, 33 P-type well region 34, 35 N+ doped region 36, 37 P+ doped region 100 base GND ground pad PAD connection pad