201027603 vy^-0278 29030twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體科技，且特別是有關於— 種半導體機台的清潔方法。 【先前技術】 在半導體製程中，不論是對晶圓進行沉積製程或是敍 刻製程，所使用的反應氣體也會沉積在半導體機台之反應 室的内表面’而形成反應室中微粒(particle)的來源。這此 鲁 微粒可能會掉落在後續處理的晶圓上，使得晶圓報銷，而 大幅降低晶圓的良率。因此，在半導體機台處理過一定數 量的晶圓之後，就必須對反應室進行清潔處理，以除去附 著在反應室内表面的沈積物。 一般來說，會以三氟化氮(NF3)為清潔氣體(dean gas) 來清潔反應室。詳言之，將三氟化氮通入反應室中，利用 二氟化氮餘刻沉積於反應室圓頂(dome)以及反應室内壁之 沉積物’以達到清潔反應室的目的。值得注意的是，半導 參體機台更包括多個用以提供反應氣體至反應室的反應氣體 注入管(process gas injector)，而反應氣體也會在反應氣體 注入管内壁形成沉積物，這些沉積物可能掉落至晶圓上。 然而’目前的反應室清潔製程係由特殊清潔注入管通入清 潔氣體，其無法有效清潔反應氣體注入管内壁(如附圖）’ 造成生產良率降低。 因此’此領域亟須一種半導體機台的清潔方法，能有 效地清潔反應室内部以及反應氣體注入管内壁，以提升晶 •-0278 29030twf.doc/n 201027603 圓的產率與良率。 【發明内容】 本發明提供一種半導體機台的清潔方法，以有效地清 潔反應室内部以及反應氣體注入管内壁。 月 本發明提出一種半導體機台的清潔方法。首先，對反 應室進行第一清潔步驟’包括將清潔氣體經由短反應氣體 注入管通入反應室中，以在反應室中產生清潔氣體之電 參 漿。接著，對長反應氣體注入管進行清潔步驟，包括將清 潔氣體經由長反應氣體注入管通入反應室中。然後，對反 應室進行第二清潔步驟’包括將清潔氣體之電漿經由短反 應氣體注入管通入反應室中。 在本發明的一實施例中’上述之清潔氣體包括三氣化 氮。 在本發明的一實施例中，上述之對反應室進行第一清 潔步驟的清潔氣體具有第一流量，對長反應氣體注入管進 行清潔步驟的清潔氣體具有第二流量，其中第二流量為第 ❹ 一流量的1/9至1/5。 在本發明的一實施例中’上述之對反應室進行第二清 /糸二聚的清潔氣體之電聚具有第一流量’對長反應氣體注 入管，行清潔步驟的清潔氣體具有第二流量，其中第二流 量為第〜流量的1/14至1/9。 在本發明的一實施例中，上述之對長反應氣體注入管 進打清潔步驟的清潔氣體之流量介於150至250 sccm。 在本發明的一實施例中，上述之對反應室進行第一清 201027603 ^3-0278 29030twf.doc/n 潔步驟的清潔氣體之流量介於1000到2000 seem之間。 在本發明的一實施例中，上述之對反應室進行第二清 潔步驟的清潔氣體之電漿的流量介於1500到2500 sccm之 間。 在本發明的一實施例中，上述之對長反應氣體注入管 進行清潔步驟更包括將氦氣通入反應室中。 在本發明的一實施例中，上述之對長反應氣體注入管 進行清潔步驟更包括將氫氣通入反應室中。 在本發明的一實施例中，上述之對反應室進行第一清 潔步驟更包括將氧氣通入反應室中。 在本發明的一實施例中，上述之長反應氣體注入管具 有封閉末端，清潔氣體是經由長反應氣體注入管之管壁的 通孔而注入反應室。 在本發明的一實施例中，上述之短反應氣體注入管與 長反應氣體注入管圍繞反應室之中心軸而設置。 在本發明的一實施例_，更包括對反應室進行保護步 驟，其包括將氢氣通入反應室中。 在本發明的一實施例中，上述之對反應室進行保護步 驟更包括將氧氣通入反應室中。 在本發明的一實施例中，上述之對反應室進行保護步 驟的氫氣的流量介於1000到2000 seem之間。 在本發明的一實施例中，上述之長反應氣體注入管進 行清潔步驟歷時15秒至25秒之間。 在本發明的一實施例中，上述之對反應室進行第二清 201027603υ8·〇278— 潔步驟歷時160秒至200秒之間。 在本發明的一實施例中，上述之對反應室進行第一清 潔步驟時，設定反應室的壓力介於0.9到1.1托（Torr)之間。 在本發明的一實施例中，上述之對長反應氣體注入管 進行清潔步驟時’設定反應室的壓力介於0.9到1.1托之間。 在本發明的一實施例中，上述之對反應室進行第二清 潔步驟時’設定反應室的壓力介於5.5到6.5托之間。 基於上述，本發明之半導體機台的清潔方法能有效地 清潔反應室内部以及反應氣體注入管内壁。如此一來，能 避免沉積於反應室内部以及反應氣體注入管内壁之沉積物 掉洛至晶圓上’以大幅提升晶圓的產率與良率。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 圖1為依,¾本發明之一實施例所纟會示的一種半導體機台 的示意圖。在本實施例中，半導體機台10包括反應室20、短 ® 反應氣體注入管30以及長反應氣體注入管40。反應室20例 如是進行高密度電聚化學氣相沉積(High_density plasma chemical vapor deposition，HDPCVD)的反應室，其包括反應 室圓頂(dome)22以及反應室内壁24。短反應氣體注入管％ 與長反應氣體注入管40例如是環繞反應室2〇的中心軸而 設置，以輸送反應氣體與清潔氣體至反應 體注入管30與長反應氣體注人管4Q例如是二3應= 短反應氣體注入管30與長反應氣體注入管4〇的傾斜角度 ^8-0278 29030twf.doc/n 201027603 (即與垂線的夾角mx不同。制注意的是，在本實施例 中短反應氣體注入管30與長反應氣體注入管4〇例如是 具有，閉末端CE，也就是清潔氣體例如是經由短反應氣體 庄30與長反應氣體注人管4()之管壁的通孔h注入反 應至其中，短反應氣體注入管的長度例如是3〇瓜皿至4〇 mm’長反應氣體注入管的長度例如是2〇〇爪历至22〇 mm。 再者’在本實施例中’半導體機台1〇更包括特殊清潔注入 管50。 ❹ 湘1的半導體機台進行清潔的方法如下所述。圖2 為依照本發明之-實施例所繪示的一種半導體機台的清潔方 法之流程示意圖。 π同牯參照圖1與圖2，首先，進行步驟sl〇2 ,對反 應室2〇,進行第-清潔步驟，包括將清潔氣體經由短反應氣 ，注入官30通入反應室2〇中，以在反應室2〇中產生清潔 氣體之電漿。此步驟的主要目的是移除沉積於反應室圓頂 2^，沉積物，例如氧化矽。清潔氣體例如是三氟化氮，其 參 6|L 里例如疋”於約 1〇〇〇 到 2000 seem ( standard cubic centimetersperminute)之間’較佳為 15〇〇 sccm。在進行此步 驟S102時，設定反應室的壓力例如是介於約〇9到u托 (Torr)之間’較佳為〗托。以及，例如是將反應室的高頻功 率(high frequency power)設定成介於約 2500 到 3500 瓦（W) 之間較佳為3000瓦，將反應室的低頻功率(i〇w power)設定成〇瓦左右。在本實施例中，偵測此步驟sl〇2 疋否元成的方法是終點彳貞測法。再者，在一實施例中，在 進打此步驟S102時，也可以選擇性地將氧氣通入反應室 201027603 08-0278 29030twf.doc/n uivi^Ly-^υι 中。氧氣的流量例如是介於約140到160 sccm之間 150 seem。 ” 接著’進行步驟S104，對長反應氣體注入管40進行清 1驟，包括將清潔氣體經由長反應氣體注人管4〇通入反 ^室中。值躲意的是’此步較#由使三氣化1缓慢地 ^過長反聽體；；认管4〇來移除沉積於長反應氣體注入 & 40内壁的沉積物。因⑶，步驟sl〇4的清潔氣體的流量 Ο 例如是低於步驟S102的清潔氣體的流量。舉例來說，步 驟S102的清潔氣體具有第一流量，步驟sl〇4的清潔氣體 具有第二流量，其中第二流量例如是第一流量的丨/9至 =5。在此步驟sl〇4中，清潔氣體例如是三氟化氮，其流 里例如是介於約15〇到25〇sccm之間，較佳為2〇〇 在 進仃此步驟S104時，設定反應室的壓力例如是介於約〇 9到 ^托（Torr)之間’較佳為i托。以及，例如是將反應室的 n頻功率設定成介於約1〇〇〇到2000瓦（W)之間，較佳為 15⑽瓦’將反應室的低頻功率設定成介於約到27⑻到37〇〇 瓦（W)之間’較佳為3200瓦。在本實施例中，此步驟sl〇4 例如是歷時15秒至25秒之間，較佳為20秒左右。此外， 在一實施例中，在進行此步驟S104時，也可以選擇性地經 由特殊清潔注入管50將氦氣與氫氣通入反應室中。氫氣在 ，潔過程中可與氟離子發生反應以去除多餘的氟，而氦氣可穩 疋清潔過程期間的化學反應並減少壓力變化。其中，氦氣的 ，量例如是介於約15〇到250 sccm之間，較佳為2〇〇 sccm ; 氮氣的流量例如是介於約450到550 seem之間，較佳為500 seem ° 201027603 卿一仙 08-0278 29030twf：doc/n 特別-提的是’在本實施例中，長反應氣體注入管4〇 =疋，封閉末端CE，也就是清潔氣體是經由長反應氣 ，庄入& 40之管壁的通孔H而注入反應室2〇。一般來說， 沉積於長反應氣體注入管内壁的沉積物不易移除，尤其是 具有封閉末端的長反應氣體注入管，然而驟/能 效地清潔具細末端CE的長反應氣體注^==有 再者，在本實施例中是以先對反應室2〇進行第一清潔步 « 驟’再縣反應氣體注入管4〇進行清潔步驟為例，但^ =實施例巾’也可以先對長反麟魅巧進行清潔步 驟，再對反應室進行第一清潔步驟。 然後’進行步驟S106,對反應室20進行第二清潔步驟， 包括將遠端電毁源所產生之清潔氣體之電漿經由短反應氣 體注入管30通入反魅20中。此步驟的主要目的是移除沉 積於反應室内壁24的沉積物，例如氧化矽。在本實施例中， 清潔氣體之電装包括三敗化氮之電毁，其流量例如是介於 約1500到250〇SCcm之間，較佳為2〇〇〇sccm。值得注咅的 馨 是’在一實施例中’步驟S106中的清潔氣體之電衆2有 第一流量’步驟S104的清潔氣體具有第二流量，其中第 二流量例如是第-流量的1/14至1/9。再者，在進行此步驟 S106時’設定反應室的壓力例如是介於約5 5到6 5托（τ〇ιτ) 之間’較佳為6托。以及，例如是將反應室的高頻功率設定 成〇瓦左右，將反應室的低頻功率也可以設定成〇瓦左右。 在本實施例中，此步驟S106例如是歷時16〇秒至2〇〇秒 之間，較佳為180秒左右。 繼而，在進行完所有清潔步驟後，可以選擇性地進行步 201027、6〇3謂讓。祕。c/n 驟S108，對反應室20進行保護步驟，其包括將氫氣通入反 應室20中。在本實施例中，例如是將氫氣經由短反應氣體 注入管30通入反應室20中。此步驟可視為一個恢復 (recover)步驟’利用氳氣與上述所使用之含氟清潔氣體作 用，而移除掉反應室20中的清潔氣體，避免清潔氣體影響後 續之製程。在此步驟S108中’氫氣的流量例如是介於約100〇 到2000 seem之間’較佳為15〇〇 sccm。在進行此步驟si〇8201027603 vy^-0278 29030twf.doc/n VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a semiconductor technology, and more particularly to a method of cleaning a semiconductor machine. [Prior Art] In the semiconductor process, whether the deposition process or the engraving process is performed on the wafer, the reactive gas used is deposited on the inner surface of the reaction chamber of the semiconductor machine to form particles in the reaction chamber. )origin of. This ruthenium particles may fall on the subsequently processed wafers, reimbursing the wafers and significantly reducing wafer yield. Therefore, after a certain number of wafers have been processed by the semiconductor machine, the reaction chamber must be cleaned to remove deposits attached to the surface of the reaction chamber. In general, the reaction chamber is cleaned with nitrogen trifluoride (NF3) as a dean gas. In detail, nitrogen trifluoride is introduced into the reaction chamber, and the nitrogen dioxide is deposited on the dome of the reaction chamber and the deposit on the inner wall of the reaction chamber to clean the reaction chamber. It is worth noting that the semi-conductive body machine further comprises a plurality of process gas injectors for supplying reaction gas to the reaction chamber, and the reaction gas also forms deposits on the inner wall of the reaction gas injection pipe. Deposits may fall onto the wafer. However, the current reaction chamber cleaning process is to pass a clean gas from a special cleaning injection tube, which cannot effectively clean the reaction gas injection into the inner wall of the tube (as shown in the drawing), resulting in a decrease in production yield. Therefore, there is a need for a semiconductor machine cleaning method that effectively cleans the inside of the reaction chamber and the inside of the reaction gas injection tube to increase the yield and yield of the crystal. SUMMARY OF THE INVENTION The present invention provides a method of cleaning a semiconductor machine to effectively clean the inside of the reaction chamber and the inner wall of the reaction gas injection pipe. The present invention proposes a method of cleaning a semiconductor machine. First, performing a first cleaning step on the reaction chamber' includes passing a cleaning gas into the reaction chamber via a short reaction gas injection tube to produce a cleaning slurry of the cleaning gas in the reaction chamber. Next, a cleaning step is performed on the long reaction gas injection tube, including passing the cleaning gas into the reaction chamber through the long reaction gas injection tube. Then, performing a second cleaning step on the reaction chamber' includes passing the plasma of the cleaning gas into the reaction chamber through the short reaction gas injection tube. In an embodiment of the invention, the cleaning gas described above comprises tri-nitrogen gas. In an embodiment of the invention, the cleaning gas for performing the first cleaning step on the reaction chamber has a first flow rate, and the cleaning gas for the cleaning step of the long reaction gas injection tube has a second flow rate, wherein the second flow rate is 1/ 1/9 to 1/5 of a flow. In an embodiment of the invention, the electropolymerization of the cleaning gas for performing the second cleaning/deuterium dimerization on the reaction chamber has a first flow rate 'for the long reaction gas injection tube, and the cleaning gas for the cleaning step has the second flow rate. , wherein the second flow rate is 1/14 to 1/9 of the first flow rate. In an embodiment of the invention, the flow rate of the cleaning gas for the long reaction gas injection pipe cleaning step is between 150 and 250 sccm. In an embodiment of the invention, the flow rate of the cleaning gas for the first clearing of the reaction chamber is between 1000 and 2000 seem. In one embodiment of the invention, the flow rate of the plasma of the cleaning gas for the second cleaning step of the reaction chamber is between 1500 and 2500 sccm. In an embodiment of the invention, the step of cleaning the long reaction gas injection tube further comprises introducing helium into the reaction chamber. In an embodiment of the invention, the step of cleaning the long reaction gas injection tube further comprises introducing hydrogen into the reaction chamber. In an embodiment of the invention, the step of performing the first cleaning of the reaction chamber further comprises introducing oxygen into the reaction chamber. In an embodiment of the invention, the long reaction gas injection pipe has a closed end, and the cleaning gas is injected into the reaction chamber through a through hole of the pipe wall of the long reaction gas injection pipe. In an embodiment of the invention, the short reaction gas injection pipe and the long reaction gas injection pipe are disposed around a central axis of the reaction chamber. In one embodiment of the invention, a step of protecting the reaction chamber includes passing hydrogen gas into the reaction chamber. In an embodiment of the invention, the step of protecting the reaction chamber further includes introducing oxygen into the reaction chamber. In an embodiment of the invention, the flow rate of hydrogen gas for the protection step of the reaction chamber is between 1000 and 2000 seem. In an embodiment of the invention, the long reaction gas injection tube is subjected to a cleaning step for between 15 seconds and 25 seconds. In an embodiment of the invention, the second clearing of the reaction chamber is performed between 160 seconds and 200 seconds. In an embodiment of the invention, the pressure of the reaction chamber is set to be between 0.9 and 1.1 Torr when the first cleaning step is performed on the reaction chamber. In an embodiment of the invention, when the cleaning step of the long reaction gas injection pipe is performed, the pressure of the reaction chamber is set to be between 0.9 and 1.1 Torr. In an embodiment of the invention, when the second cleaning step is performed on the reaction chamber, the pressure in the reaction chamber is set to be between 5.5 and 6.5 Torr. Based on the above, the cleaning method of the semiconductor machine of the present invention can effectively clean the inside of the reaction chamber and the inner wall of the reaction gas injection pipe. In this way, deposits deposited on the inside of the reaction chamber and on the inner wall of the reaction gas injection tube can be prevented from falling off onto the wafer to greatly increase the yield and yield of the wafer. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] FIG. 1 is a schematic view showing a semiconductor machine according to an embodiment of the present invention. In the present embodiment, the semiconductor stage 10 includes a reaction chamber 20, a short ® reaction gas injection pipe 30, and a long reaction gas injection pipe 40. The reaction chamber 20 is, for example, a reaction chamber for performing high-density plasma chemical vapor deposition (HDPCVD), which includes a reaction chamber dome 22 and a reaction chamber wall 24. The short reaction gas injection pipe % and the long reaction gas injection pipe 40 are provided, for example, around the central axis of the reaction chamber 2, to transport the reaction gas and the cleaning gas to the reaction body injection pipe 30 and the long reaction gas injection pipe 4Q, for example, two. 3 should be = the inclination angle of the short reaction gas injection pipe 30 and the long reaction gas injection pipe 4〇^8-0278 29030twf.doc/n 201027603 (that is, the angle mx from the perpendicular line is different. Note that it is short in this embodiment The reaction gas injection pipe 30 and the long reaction gas injection pipe 4, for example, have a closed end CE, that is, a cleaning gas such as a through hole h via a short reaction gas 30 and a long reaction gas injection pipe 4 () The injection reaction is carried out therein, and the length of the short reaction gas injection pipe is, for example, 3 to 3 mm long and the length of the reaction gas injection pipe is, for example, 2 to 2 mm. In this embodiment, 'The semiconductor machine 1 further includes a special cleaning injection tube 50. The method for cleaning the semiconductor machine of the Xiang 1 is as follows. FIG. 2 is a cleaning method of a semiconductor machine according to an embodiment of the present invention. Schematic diagram Referring to FIG. 1 and FIG. 2, first, step s1〇2 is performed to perform a first cleaning step on the reaction chamber 2, including injecting the cleaning gas into the reaction chamber 2 through the short reaction gas into the chamber 30. To produce a plasma of cleaning gas in the reaction chamber 2. The main purpose of this step is to remove the deposit deposited on the dome of the reaction chamber, such as yttrium oxide. The cleaning gas is, for example, nitrogen trifluoride. 6|L, for example, 疋" between about 1 〇〇〇 to 2000 seem (standard cubic centimetersperminute) is preferably 15 〇〇 sccm. When performing this step S102, the pressure of the reaction chamber is set, for example, to about 〇 Between 9 and u (Torr) is preferably, and, for example, the high frequency power of the reaction chamber is set to be between about 2,500 and 3,500 watts (W), preferably 3,000.瓦, the low frequency power (i〇w power) of the reaction chamber is set to about 〇 watts. In this embodiment, the method of detecting this step sl 〇 2 疋 元 元 是 元 元 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In an embodiment, when the step S102 is performed, the oxygen can also be selectively reversed. Room 201027603 08-0278 29030twf.doc/n uivi^Ly-^υι. The flow rate of oxygen is, for example, between about 140 and 160 sccm, 150 seem. Then, proceeding to step S104, the long reaction gas injection pipe 40 is performed. Clearing the first step, including passing the cleaning gas into the anti-room through the long reaction gas injection tube. The value of hiding is that 'this step is more than ############################################### Pipes were taken to remove deposits deposited on the inner walls of the long reaction gas injection & 40. Since (3), the flow rate of the cleaning gas in the step sl4 is Ο, for example, the flow rate of the cleaning gas lower than the step S102. For example, the cleaning gas of step S102 has a first flow rate, and the cleaning gas of step sl4 has a second flow rate, wherein the second flow rate is, for example, 丨/9 to =5 of the first flow rate. In this step sl4, the cleaning gas is, for example, nitrogen trifluoride, and the flow thereof is, for example, between about 15 〇 and 25 〇 sccm, preferably 2 设定, when the step S104 is advanced, the reaction is set. The pressure of the chamber is, for example, between about 9 and Torr, preferably i. And, for example, setting the n-frequency power of the reaction chamber to be between about 1 Torr and 2000 watts (W), preferably 15 (10) watts. The low frequency power of the reaction chamber is set to be between about 27 (8) and 37. Between the tiles (W) is preferably 3200 watts. In this embodiment, the step sl4 is, for example, between 15 seconds and 25 seconds, preferably about 20 seconds. Further, in an embodiment, when this step S104 is performed, helium gas and hydrogen gas may also be selectively introduced into the reaction chamber through the special cleaning injection pipe 50. Hydrogen reacts with fluoride ions during the cleaning process to remove excess fluorine, while helium stabilizes the chemical reactions during the cleaning process and reduces pressure changes. Wherein, the amount of helium is, for example, between about 15 250 and 250 sccm, preferably 2 〇〇 sccm; and the flow rate of nitrogen is, for example, between about 450 and 550 seem, preferably 500 seem ° 201027603 Qing Yixian 08-0278 29030twf: doc/n Specially mentioned that 'in this embodiment, the long reaction gas injection pipe 4〇=疋, closed end CE, that is, the cleaning gas is via long reaction gas, Zhuangcheng & The through hole H of the tube wall of 40 is injected into the reaction chamber 2〇. In general, the deposit deposited on the inner wall of the long reaction gas injection pipe is not easily removed, especially a long reaction gas injection pipe having a closed end, but the long reaction gas with a fine end CE is cleaned/energy-efficiently. Furthermore, in the present embodiment, the first cleaning step of the reaction chamber 2 is first performed, and the cleaning reaction step of the gas injection tube 4 is repeated, but the method can also be long. The cleaning step is carried out in reverse, and the first cleaning step is performed on the reaction chamber. Then, step S106 is performed to perform a second cleaning step on the reaction chamber 20, including passing the plasma of the cleaning gas generated by the remote source of electrical destruction into the anti-magic 20 through the short reaction gas injection tube 30. The main purpose of this step is to remove deposits deposited on the inner wall 24 of the reaction chamber, such as yttrium oxide. In the present embodiment, the electrical equipment for the cleaning gas comprises electrical destruction of the triple-depleted nitrogen, the flow rate of which is, for example, between about 1500 and 250 〇SCcm, preferably 2 〇〇〇sccm. It is worth noting that the cleaning gas of the cleaning gas in step S106 has a first flow rate in one embodiment. The cleaning gas of step S104 has a second flow rate, wherein the second flow rate is, for example, 1/ of the first flow rate. 14 to 1/9. Further, when the step S106 is performed, the pressure of the reaction chamber is set to be, for example, between about 5 5 and 65 Torr (τ 〇 ττ), preferably 6 Torr. Further, for example, the high-frequency power of the reaction chamber is set to about watts, and the low-frequency power of the reaction chamber can be set to about watts. In this embodiment, the step S106 is, for example, between 16 sec and 2 sec, preferably about 180 sec. Then, after all the cleaning steps have been completed, steps 201027 and 6〇3 can be selectively performed. secret. c/n Step S108, the reaction chamber 20 is subjected to a protection step which includes introducing hydrogen into the reaction chamber 20. In the present embodiment, for example, hydrogen gas is introduced into the reaction chamber 20 via the short reaction gas injection pipe 30. This step can be regarded as a recovery step of using the helium gas and the fluorine-containing cleaning gas used above to remove the cleaning gas in the reaction chamber 20 to prevent the cleaning gas from affecting the subsequent process. In this step S108, the flow rate of hydrogen gas is, for example, between about 100 Torr and 2000 seem', preferably 15 〇〇 sccm. In this step si〇8
時，設定反應室的壓力例如是介於約〇.9到L1托（τ〇ΓΓ)之 間，較佳為1托。以及，例如是將反應室的高頻功率設定成 =於約2800到3800瓦（W)之間，較佳為33⑻瓦，將反應 至的低頻功率設定成〇瓦左右。在本實施例中，步驟sl〇8 例如是歷時140秒至180秒之間，較佳為16〇秒左右。此 外三在此步驟S108中，也可以選擇性將氧氣通入反應室中。 氧氣的流量例如是介於約350到450 sccm之間，較佳為4〇〇 seem °The pressure in the reaction chamber is set, for example, between about 〇.9 and L1 Torr (τ〇ΓΓ), preferably 1 Torr. And, for example, the high frequency power of the reaction chamber is set to be between about 2,800 and 3,800 watts (W), preferably 33 (8) watts, and the low frequency power to be reacted is set to about watts. In the present embodiment, the step s1 〇 8 is, for example, between 140 seconds and 180 seconds, preferably about 16 sec. Further, in this step S108, oxygen can also be selectively introduced into the reaction chamber. The flow rate of oxygen is, for example, between about 350 and 450 sccm, preferably 4 〇〇 seem °
生綜上所述，本發明之半導體機台的清潔方法可以有效地 /月 >糸反應至内部以及反應氣體注入管内壁。如 移除沉積於反應室圓頂、反應室内壁以;反應 内壁的沉積物，以避免沉積物掉落至晶圓上，進而大幅提 升晶圓的良率與產率。此外’本發明之半導雜台的清潔方 法能解決長反應氣體注人管内壁不易清潔的問題，且在同 =清潔製財完纽應室與反應氣體注人管的清潔，以縮 減清潔半導體機台所需耗費的時間。 、 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 J8-0278 29030twf.doc/n 201027603 本發明之精神和範圍内，當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1為依照本發明之一實施例所繪示的一種半導體機台 的示意圖。 圖2為依照本發明之一實施例所繪示的一種半導體機台 的清潔方法之流程示意圖。 【主要元件符號說明】 ® 10 :半導體機台 20 :反應室 22 :反應室圓頂 24 :反應室内壁 30 :短反應氣體注入管 40 :長反應氣體注入管 50 :特殊清潔注入管 CE :封閉末端 ❹ Η :通孔 S102、S104、S106、S108 :步驟 11As described above, the cleaning method of the semiconductor machine of the present invention can be effectively reacted to the inside and the reaction gas is injected into the inner wall of the tube. For example, the deposit deposited on the dome of the reaction chamber, the inner wall of the reaction chamber, and the deposit on the inner wall are removed to prevent the deposit from falling onto the wafer, thereby greatly increasing the yield and yield of the wafer. In addition, the cleaning method of the semi-conductive miscellaneous table of the present invention can solve the problem that the inner wall of the long reaction gas injection tube is not easy to clean, and the cleaning of the semiconductor chamber and the reaction gas injection tube in the same cleaning and cleaning process to reduce the cleaning semiconductor The time it takes for the machine. The present invention has been disclosed in the above embodiments, but it is not intended to limit the invention, and any one of ordinary skill in the art, without departing from the spirit and scope of the invention, The scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a semiconductor machine according to an embodiment of the invention. 2 is a flow chart showing a method of cleaning a semiconductor machine in accordance with an embodiment of the invention. [Main component symbol description] ® 10 : Semiconductor machine 20 : Reaction chamber 22 : Reaction chamber dome 24 : Reaction chamber wall 30 : Short reaction gas injection tube 40 : Long reaction gas injection tube 50 : Special cleaning injection tube CE : Closed End ❹ Η : Through holes S102, S104, S106, S108: Step 11