TW201027266A - Ilumination optical system, exposure apparatus and device manufacturing method - Google Patents
Ilumination optical system, exposure apparatus and device manufacturing method Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 173
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000009826 distribution Methods 0.000 claims abstract description 246
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- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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Abstract
Description
201027266 六、發明說明: [發明所屬之技術領域】201027266 VI. Description of the invention: [Technical field to which the invention belongs]
本發明有關於一種照明光學系統、曝光裝置以及元件 製造方法。進而詳細而言,本發明有關於一種適合於如下 曝光裝置的照明光學系統,該曝光裝置用於藉由微影 (mb ography )製程來製造半導體元件、攝像元件、液晶 顯示元件 '薄膜磁頭(thin film magnetic head )等元件。 [先前技術】 於此種典型性曝光裝置中5自光源所射出的光經由作 為光學積分器(optical integrator )的複眼透鏡(fly eye lens),形成由多數個光源構成的作為實質性面光源的二次 光源(一般而言為照明光曈中的規定光強度分佈)。以下, 將照明光瞳中的光強度分佈稱為「光瞳強度分佈」。而且, 照明光瞳被定義為如下位置,該位置是藉由照明光瞳與被 照射面(在曝光裝置情況下為光罩或晶圓)之間的光學系 統的作用5而使被照射面成為照明光瞳的傅立葉(Fourier) 轉換面的位置。 來自二次光源的光藉甴聚光透鏡(condenser lens)聚 光之後,對形成有規定圖案的光罩進行疊加照明。穿透光 罩的光經由投影光學系統而成像於晶圓上,並在晶圓上投 影曝光(轉印)光罩圖案。形成於光罩上的圖案被南積集 化,為了將該微細圖案準確轉印至晶圓上,不可欠缺的是 在晶圓上要獲得均勻的照度分佈。 而且,提出了形成例如輪帶狀或多極狀(2極狀' 4 201027266 極狀等)的光瞳強度分佈:且使投影光學系統的焦點深度 或解像力(reso)udonresoh'ingpower ;提高的技術(參照 專利文獻Π。 [專利文獻1]美國專利公開第2006/0055S34號公報 為了將光罩的微細圖案忠實地轉印至晶圓上,不僅必 須將光瞳強度分佈調整為所希望的形狀'而且必須將晶圓 上各點的相關光瞳強度分佈調整為各自大約均勻。若晶圓 上各點的光瞳強度分佈的均句性仔在圭異則將因晶圓上 的每個位置上圖案線寬不均,而導致無法遍及整個曝光區 域以所希望的線寬將光罩的微細圖案轉印至晶圓上。如 此,為了將光罩的微細圖案準確地轉印至晶圓上,重要的 是,將作為最終被照射面的晶圓上的照度分佈以及晶圓上 各點的相關光瞳強度分佈調整為所希望的分佈。 [發明内容】 本發明是鑒於上述課題而研製而成者,提供一種可將 被照射面中的照度分佈以及被照射面各點的相關光瞳強度 分佈調整為所希望的分佈的照明光學系統。而且,本發明 提供一種曝光裝置,使用可將被照射面上的照度分佈以及 被照射面上各點的相關光瞳強度分佈調整為所希望的分佈 的照明光學系統,能基於適當的照明條件進行良好的曝光。 為了解決上述課題,本發明第1形態提供一種照明光 學系統,依據來自光源的光對被照射面進行照明,包括: 空間光調變器(spatial light modulator),具有二維排列且 被單獨控制的多個光學要素;聚光光學系統,依據經由上 201027266 1 —Uli .OOv 述空間光調變器的光,在與上述空間光調變器的上述多個 光學要素的排列面成為光學性傳立葉轉換之面上·形成規 定的光強度分佈:光學積分器,於上述作為傳立葉轉換之 面上,具有二維排列的多個單位波前分割面;以及控制部5 對上述空間光調變器進行控制,以便依據經由上述聚光光 學系統以及上述光學積分器且來自上述空間光調變器的 光,將形成於照明光瞳的光瞳強度分佈調整為所需分佈, 並且將上述多個單位波前分割面的各自中所形成的光強度 ® 分佈分別調整為所需分佈。 本發明第2.形態提供一種曝光裝置,包括:對規定圖 案進行照明的第1形態的照明光學系統,並將上述規定圖 案曝光於感光性基板上。 本發明第3形態提供一種元件製造方法,包括:曝光 步驟,使用第2形態的曝光裝置,將上述規定圖案曝光於 上述感光性基板上;顯影步驟,將轉印有上述規定圖案的 上述感光性基板顯影,並將形狀與上述規定圖案對應的罩 φ 幕層形成於上述感光性基板的表面;以及加工步驟,經宜 上述罩幕層對上述感光性基板的表面進行加工。 本發明的照明光學系統中,控制部對空間光調變器的 多個光學要素進行控制,使形成於光學積分器的各單位波 前分割面上的光強度分佈適當變化,藉此可將形成於被照 射面的照度分佈調整為所希望的分佈(例如均勻的分佈), 並且可將被照射面各點的相關光瞳強度分佈分別調整為所 希望的分佈(例如均勻的分ί布)。 201027266 j . -iju.doc 亦即·本發明的照明光學系統 > 可將被照射面中的照 i分佈以及被照射面各點的相1光曈強变分佈調整為所希 望的分佈。結果為、本發明的曝光裝置能夠使用可將被照 射面中的照度分佈以及被照射面的各點的相關光瞳強度分 佈調整為所希望的分佈的照明光學系統,基於適當的照明 條件進行良好的曝光,從而可製造良好的元件。 為讓本發明之上述特徵和優點能更明顯易慊,下文特 舉實施例,並配合所附圖式作詳細說明如下。 [實施方式】 根據隨附圖式對本發明的實施形態進行說明。圖1是 概略性表示本發明實施形態的曝光裝置的構成的圖。於圖 1中,將沿著作為感光性基板的晶圓W的轉印面(曝光面) 的法線方向設定為Z軸,於晶圓W的轉印面内與圖1的 紙面平行的方向設定為Y軸,於晶圓W的轉印面内與圖1 的紙面垂直的方向設定為X罕由。 參照圖1,本實施形態的曝光裝置中,自光源LS供給 曝光光(照明光)。作為光源LS,可使用供給例如193 nm 波長光的ArF ( Argon-Fluoride,氬氟)準分子雷射光源' 或供給248 nm波長光的KrF (Krypton-Fluoride,氪氟)準 分子雷射光源等。自光源LS射出的光經由光束傳輸部1, 而入射至空間光調變單元SU。光束傳輸部〗具有如下功 能:將來自光源LS的入射光束轉換為具有適當大小以及 形狀的剖面的光束、且導向空間光調變單元SU,並且主 動地修正入射至空間光調變單元SU中的光束的位置變動 201027266 n _____ri:.ac)c 以及角度變動。 空間光調變單元SU已括:空間光調變器3,具有二 維排列且被單獨控制的多個反躬鏡要素(element):以及 導光構件2 ’將經由光束傳輸部1而入射至空間光調變單 元SU的光導向空間光調變器3,且將經由空間光調變器3 的光導向後續的中繼(relay )光學系統4。空間光調變單 元SU的具體構成以及作用將於下文敍述。自空間光調變 單元SU所射出的光經由中繼光學系統4而入射至微複眼 參 透鏡(或複眼逍鏡)5。 中繼光學系統4設定為:中繼光學系統4的前側焦點 位置與空間光調變器3的多個反射鏡要素的排列面的位置 大致一致,且中繼光學系統4的後侧焦點位置與微複眼透 鏡5的入射面5a的位置大致一致。因此,如下所述,經由 空間光調變器3的光於微複眼透鏡5的入射面5a上,形成 與多個反射鏡要素的姿勢相對應的所希望的光強度分佈。 微複眼透鏡5是例如由縱橫且密集排列的多數個具有正折 ^ 射力的微透鏡所構成的光學元件’且藉由對平行平面板貫 施蝕刻處理以形成微透鏡群而構成。 微複眼透鏡與由相互隔絕的透鏡元件所構成的複眼透 鏡不同,微複眼透鏡一體形成有並不相互隔絕的多數個的 微透鏡(微折射面)。然而,在透鏡要素縱橫配置方面,微 複眼透鏡與複眼透鏡同為波前分割型光學積分器。作為微 複眼透鏡5中的單位波前分割面的矩形微折射面,呈現與 光罩Μ上應形成的照明視野的形狀(以及晶圓W上應形 201027266The present invention relates to an illumination optical system, an exposure apparatus, and a component manufacturing method. More specifically, the present invention relates to an illumination optical system suitable for an exposure apparatus for manufacturing a semiconductor element, an image pickup element, and a liquid crystal display element 'thin film head' by a lithography process (thin) Film magnetic head ) and other components. [Prior Art] In the typical exposure apparatus, light emitted from a light source is formed by a fly eye lens as an optical integrator, and a plurality of light sources are formed as a substantial surface light source. Secondary light source (generally a defined light intensity distribution in an illumination pupil). Hereinafter, the light intensity distribution in the illumination pupil is referred to as "the pupil intensity distribution". Further, the illumination pupil is defined as a position which is caused by the action of the optical system between the illumination pupil and the illuminated surface (the mask or the wafer in the case of the exposure device) 5 The position of the Fourier transition plane of the illumination pupil. After the light from the secondary light source is condensed by a condenser lens, the reticle forming the predetermined pattern is superimposed and illuminated. Light passing through the reticle is imaged onto the wafer via a projection optical system, and an exposure (transfer) reticle pattern is projected on the wafer. The pattern formed on the reticle is concentrated in the south, and in order to accurately transfer the fine pattern onto the wafer, it is indispensable to obtain a uniform illuminance distribution on the wafer. Moreover, it has been proposed to form a pupil intensity distribution such as a belt-like or multi-pole shape (2-pole shape 4 4 201027266 pole shape, etc.): and to make the depth of focus or resolution of the projection optical system (reso) udonresoh'ing power; (Patent Document 1) In order to faithfully transfer a fine pattern of a photomask onto a wafer, it is necessary to adjust not only the pupil intensity distribution to a desired shape. Moreover, the relevant pupil intensity distribution at each point on the wafer must be adjusted to be approximately uniform. If the uniformity of the pupil intensity distribution at each point on the wafer is different, it will be due to each position on the wafer. The pattern line width is uneven, and it is impossible to transfer the fine pattern of the mask to the wafer at a desired line width throughout the entire exposure area. Thus, in order to accurately transfer the fine pattern of the mask onto the wafer, It is important to adjust the illuminance distribution on the wafer as the final illuminated surface and the relevant pupil intensity distribution at each point on the wafer to a desired distribution. [Invention] The present invention has been made in view of the above problems. The present invention provides an illumination optical system that can adjust the illuminance distribution in the illuminated surface and the associated pupil intensity distribution at each point of the illuminated surface to a desired distribution. Moreover, the present invention provides an exposure apparatus that can be used. The illumination optical system that adjusts the illuminance distribution on the illuminated surface and the relevant pupil intensity distribution at each point on the illuminated surface to a desired distribution, and can perform good exposure based on appropriate illumination conditions. In order to solve the above problems, the present invention A first aspect provides an illumination optical system that illuminates an illuminated surface in accordance with light from a light source, comprising: a spatial light modulator having a plurality of optical elements that are two-dimensionally arranged and individually controlled; The optical system is based on the light of the spatial light modulator described in the above-mentioned 201027266 1 - Uli. OOv, and the surface of the plurality of optical elements arranged on the spatial light modulator is converted to an optical surface. Light intensity distribution: an optical integrator with multiple orders arranged in two dimensions on the face described above as a transition of the Fourier a wavefront pre-segment surface; and the control unit 5 controls the spatial light modulator to form an illumination pupil in accordance with light passing through the concentrating optical system and the optical integrator and from the spatial light modulator The pupil intensity distribution is adjusted to a desired distribution, and the light intensity® distribution formed in each of the plurality of unit wavefront split surfaces is respectively adjusted to a desired distribution. The second aspect of the present invention provides an exposure apparatus including An illumination optical system according to a first aspect of illuminating a predetermined pattern, wherein the predetermined pattern is exposed on a photosensitive substrate. According to a third aspect of the present invention, there is provided a device manufacturing method comprising: an exposure step, using an exposure apparatus according to a second aspect And exposing the predetermined pattern to the photosensitive substrate; and developing a step of developing the photosensitive substrate on which the predetermined pattern is transferred, and forming a mask φ layer corresponding to the predetermined pattern on the photosensitive substrate a surface; and a processing step, wherein the surface of the photosensitive substrate is processed by the mask layer. In the illumination optical system of the present invention, the control unit controls the plurality of optical elements of the spatial light modulator to appropriately change the light intensity distribution formed on each unit wavefront split surface of the optical integrator, thereby forming the optical intensity The illuminance distribution on the illuminated surface is adjusted to a desired distribution (for example, a uniform distribution), and the relevant pupil intensity distribution at each point of the illuminated surface can be adjusted to a desired distribution (for example, a uniform distribution). 201027266 j. -iju.doc In other words, the illumination optical system of the present invention can adjust the distribution of the illumination i in the illuminated surface and the phase 1 optical intensity distribution of each point on the illuminated surface to a desired distribution. As a result, the exposure apparatus of the present invention can use an illumination optical system that can adjust the illuminance distribution in the illuminated surface and the relevant pupil intensity distribution of each point of the illuminated surface to a desired distribution, and performs well based on appropriate lighting conditions. The exposure allows for the manufacture of good components. The above-described features and advantages of the present invention will become more apparent from the following detailed description of the embodiments. [Embodiment] An embodiment of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the normal direction of the transfer surface (exposure surface) of the wafer W, which is a photosensitive substrate, is set to the Z axis, and the direction parallel to the paper surface of FIG. 1 in the transfer surface of the wafer W is set to The Y-axis is set to X in the direction perpendicular to the paper surface of FIG. 1 in the transfer surface of the wafer W. Referring to Fig. 1, in an exposure apparatus of this embodiment, exposure light (illumination light) is supplied from a light source LS. As the light source LS, an ArF (Argon-Fluoride) excimer laser light source for supplying light of, for example, 193 nm wavelength or a KrF (Krypton-Fluoride) excimer laser light source for supplying light of 248 nm wavelength can be used. . The light emitted from the light source LS is incident on the spatial light modulation unit SU via the beam transfer unit 1. The beam transmitting portion has a function of converting an incident light beam from the light source LS into a light beam having a cross section of an appropriate size and shape, and guiding it to the spatial light modulation unit SU, and actively correcting the incident light into the spatial light modulation unit SU The position of the beam changes 201027266 n _____ri: .ac)c and the angle changes. The spatial light modulation unit SU includes a spatial light modulator 3 having a plurality of inverted mirror elements arranged in two dimensions and individually controlled: and the light guiding member 2' will be incident via the beam transmitting portion 1 The light of the spatial light modulation unit SU is directed to the spatial light modulator 3 and directs the light via the spatial light modulator 3 to a subsequent relay optical system 4. The specific constitution and function of the spatial light modulation unit SU will be described later. The light emitted from the spatial light modulation unit SU is incident on the micro-integrated ocular lens (or the compound eye frog mirror) 5 via the relay optical system 4. The relay optical system 4 is set such that the front focus position of the relay optical system 4 substantially coincides with the position of the arrangement surface of the plurality of mirror elements of the spatial light modulator 3, and the rear focus position of the relay optical system 4 is The positions of the incident faces 5a of the micro fly's eye lens 5 are substantially the same. Therefore, as described below, a desired light intensity distribution corresponding to the posture of the plurality of mirror elements is formed on the incident surface 5a of the micro-antoscopic lens 5 via the light of the spatial light modulator 3. The micro-overlocular lens 5 is, for example, an optical element composed of a plurality of microlenses having a positive refractive index which are vertically and horizontally arranged in a densely arranged manner, and is formed by performing an etching treatment on a parallel plane plate to form a microlens group. Unlike a compound eye lens composed of mutually isolated lens elements, the micro eye-eye lens integrally forms a plurality of microlenses (micro-refractive surfaces) which are not isolated from each other. However, in terms of the longitudinal and horizontal arrangement of the lens elements, the micro eye lens and the fly eye lens are both wavefront split type optical integrators. The rectangular micro-refractive surface as the unit wavefront splitting surface in the micro-eye lens 5 presents the shape of the illumination field to be formed on the mask (and the wafer W should be shaped 201027266).
j 一-. i 一 i.'ii .QOC 成的曝光區域的形狀)相似的短形。再者,作為徽複眼透 鏡5 ·亦可使用例如柱狀微複眼透鏡fcylind:·丨ca:microfly eye lens )。柱狀微複眼透鏡的構成以及作用揭示於例如美 國專利第6.913,373號公報中。 入射主微複眼运鏡5的光東被多數個的微远鏡二維分 割,於微複眼透鏡5的後侧焦點面或微複眼透鏡5的闸近 的照明光瞳形成:具有與由入射光束所形成的照明視野大 致相同的光強度分佈的二次光源(亦即光瞳強度分佈)。來 自微複眼透鏡5的後侧焦點面或微複眼透鏡5的附近所形 ❹ 成的二次光源的光束、將入射至配置在微複眼透鏡5附近 的孔徑光闌6中。 孔徑光闌6具有:與形成於微複眼透鏡5的後側焦點 面或微複眼透鏡5的附近的二次光源相對應的形狀的開口 部(透光部)。孔徑光闌6構成為可對照明光路自由裝卸, 且構成為可與具有大小以及形狀不同的開口部的多個孔徑 光闌進行切換。作為孔徑光闌的切換方式,可使用例如眾 所周知的轉動架(turret)方式、或滑塊(slide)方式等。 孔徑光闌6配置於與下述投影光學系統PL的入射曈面大 致光學性共輛的位置,且規定有助於二次光源的照明的範 圍。再者,亦可省略孔徑光闌6的設置。 來自由孔徑光闌6所限制的二次光源的光經由聚光光 學系統7而對光罩遮器(mask blind) 8進行疊加性照明。 如此,於作為照明視野光闌的光罩遮器8處、形成有與微 複眼透鏡5的矩形微折射面的形狀與焦點距離相對應的矩 201027266 … ~ .1 \-J 1. :.cioc 形照明視野。經由光覃遮器δ的矩形開口部(透光部:)的 光采*受到成.像光學系統9的聚光作用之後5對形成有規 定圖案的光罩Μ進行疊加性照明。亦即 '成像光學系統9 將光罩遮器8的矩形開口部的像形成於光罩Μ上。 穿透保持於光罩平台MS上的光罩Μ的光束,經由投 影光學系統PL‘而使光罩圖案的像形成於保持在晶圓載物 台TvVS上的晶圓(感光性基板)W上。如此 '在與投影光 學系統PL的光軸AX正交的平面(XY平面)内,一面對 © 晶圓載物台WS進行二維驅動控制、而對晶圓W進行二維 驅動控制,且一面進行單次曝光或掃描曝光。藉此,使光 罩Μ的圖案依次曝光於晶圓W的各曝光區域中。 本實施形態中,使藉由微複眼透鏡5而形成的二次光 源作為光源,對配置於照明光學系統的被照射面的光罩Μ 進行何勒照明(Kohler illumination )。因此,形成有二次光 源的位置與投影光學系統PL的孔徑光闌A S的位置為光學 性共軛,故可將二次光源的形成面稱為照明光學系統的照 φ 明曈面。典型而言,相對於照明瞳面,被照射面(配置有 光罩Μ的面:或者考慮包含有投影光學系統PL的照明光 學系統時配置有晶圓W之面)成為光學性傅立葉轉換面。 再者,所謂光瞳強度分佈,是指照明光學系統的照明瞳面、 或與該照明瞳面光學性共輛的面中的光強度分佈(亮度分 佈)。 當微複眼透鏡5的波前分割數相對較大時,形成於微 複眼透鏡5的入射面的整體性光強度分佈、與二次光源整 201027266 。二一ρκ·α(κ. 體的整體性光強度分佈(光瞳強度分佈)顯示出較高的關 聯性’ correlation ) £因此,可將微複眼透鏡5的入射面以 及與該人射面光學性共軛的面中的光強度分佈稱為光曈強 度分佈。於圖1的構成中,空間光調變皁元SU、中繼光 學系統4及微複眼透鏡5構成為:於較微複眼透鏡5更後 側的照明光瞳中形成光瞳強度分佈的分佈形成光學系統。 請參照圖2,空間光調變單元SU中的導先構件2具 有:沿例如X方向延伸的三角柱狀的棱鏡(prism mirror ) 形態。來自經由光束傳輸部1的光源LS的光由導光構件2 的第1反射面2a反射之後,入射至空間光調變器3。經空 間光調變器3調變的光,由導光構件2的第2反射面2b 反射而導向中繼光學系統4。 如圖2及圖3所示,空間光調變器3包括:本體3a, 具有二維排列的多個反射鏡要素SE ;以及驅動部3b,對 多個反射鏡要素SE的姿勢單獨進行控制驅動。為使說明 及圖示簡單,圖2及圖3中表示空間光調變器3的本體3a 包括4x4=16個反射鏡要素SE的構成例,而實際上包括 遠遠多於]6個的多數個反射鏡要素SE。 請參照圖2,沿著與光軸AX平行的方向而入射至導 光構件2的第1反射面2a中的光線群中,光線L1入射至 多個反射鏡要素SE中的反射鏡要素SEa,光線L2入射至 與反射鏡要素SEa不同的反射鏡要素SEb。同樣地,光線 L3入射至與反射鏡要素SEa、SEb不同的反射鏡要素SEc, 光線L4入射至與反射鏡要素SEa〜SEc不同的反射鏡要素 201027266 SEd。反射鏡要素SEa〜SEd對應於反射鏡要素SE&〜SEd 的位置‘而對光L ]〜L4施加設定的空間性調變。 空間光調變器3構成為:在所有反射鏡要素SE的反 射面沿著]個平面(XY平面)而設定的基準狀態(以下, 稱為「基準狀態」)下,沿著與光軸AX平行的方向而入射 的光線由空間光調變器3的各反射鏡要素SE反射之後, 藉由導光構件2的第2反射面2b而朝向與光軸AX大致平 行的方向進行反射。而且,空間光調變器3的排列有多個 ® 反射鏡要素SE的面定位於中繼光學系統4的前側焦點位 置、或中繼光學系統4的附近。 因此,由空間光調變器3的反射鏡要素SEa〜SEd反 射後被施加規定的角度分佈的光,於微複眼透鏡5的入射 面5a形成規定的光強度分佈SP1〜SP4。亦即,中繼光學 系統4將空間光調變器3的反射鏡要素SEa〜SEd賦予射 出光的角度5轉換至作為空間光調變器3的遠視野區域(夫 浪禾費繞射區域,Framiliofer diffraction area )'即入射面5a _ 上的位置。 如此,中繼光學系統4構成如下聚光光學系統:該聚 光光學系統依據經由空間光調變器3的光,在與空間光調 變器3的多個反射鏡要素SE的排列面成為光學性傅立葉 轉換的面,亦即,微複眼透鏡5的入射面5a形成規定的光 強度分佈。微複眼透鏡5所形成的二次光源的光強度分佈 (光瞳強度分佈)成為對應於空間光調變器3及中繼光學 系統4在入射面5a上所形成的光強度分佈。j--.i-i.'ii.QOC into the shape of the exposed area) similarly short. Further, as the eye-recovering lens 5, for example, a columnar micro-eye lens fcylind: 丨ca: microfly eye lens can also be used. The constitution and action of the columnar micro fly's eye lens are disclosed, for example, in U.S. Patent No. 6.913,373. The light incident on the main micro-folding eye lens 5 is two-dimensionally divided by a plurality of micro-periscopes, and is formed on the rear side focal plane of the micro-fussy lens 5 or the illumination pupil of the micro-furanic lens 5: having an incident beam The resulting secondary light source (ie, the pupil intensity distribution) of the light intensity distribution having substantially the same illumination field of view. The light beam of the secondary light source formed from the rear focal plane of the micro-fussy lens 5 or the vicinity of the micro fly's eye lens 5 is incident on the aperture stop 6 disposed in the vicinity of the micro fly's eye lens 5. The aperture stop 6 has an opening portion (light transmitting portion) having a shape corresponding to a secondary light source formed in the vicinity of the rear focal plane or the micro menigda lens 5 of the micro fly's eye lens 5. The aperture stop 6 is configured to be detachably attachable to the illumination optical path, and is configured to be switchable to a plurality of aperture stops having openings having different sizes and shapes. As the switching method of the aperture stop, for example, a well-known turret method, a slide method, or the like can be used. The aperture stop 6 is disposed at a position that is substantially optically shared with the incident pupil plane of the projection optical system PL described below, and defines a range of illumination that contributes to the secondary light source. Furthermore, the setting of the aperture stop 6 can also be omitted. The light from the secondary light source limited by the aperture stop 6 is superimposedly illuminated by a concentrating optical system 7 to a mask blind 8. In this way, at the reticle 8 as the illumination field stop, a shape corresponding to the shape of the rectangular micro-refractive surface of the micro-integrated lens 5 and the focal length is formed. 201027266 ... ~ .1 \-J 1. :.cioc Shaped illumination field of view. The luminescence of the rectangular opening (transmission portion:) passing through the diaphragm δ is subjected to the condensing action of the image optical system 9 and the superimposed illumination is performed on the mask 形成 on which the predetermined pattern is formed. That is, the imaging optical system 9 forms an image of the rectangular opening of the mask mask 8 on the mask. The light beam that has passed through the mask 保持 held on the mask stage MS is formed on the wafer (photosensitive substrate) W held on the wafer stage TvVS via the projection optical system PL'. Thus, in a plane (XY plane) orthogonal to the optical axis AX of the projection optical system PL, two-dimensional drive control is performed on the wafer carrier WS, and the wafer W is two-dimensionally driven and controlled. Make a single exposure or scan exposure. Thereby, the pattern of the mask 依次 is sequentially exposed to each exposure region of the wafer W. In the present embodiment, the secondary light source formed by the micro fly's eye lens 5 is used as a light source, and the mask 配置 disposed on the illuminated surface of the illumination optical system is subjected to Kohler illumination. Therefore, the position at which the secondary light source is formed is optically conjugate with the position of the aperture stop A S of the projection optical system PL, so that the surface on which the secondary light source is formed can be referred to as the illumination surface of the illumination optical system. Typically, the illuminated surface (the surface on which the mask 配置 is disposed: or the surface on which the wafer W is disposed in consideration of the illumination optical system including the projection optical system PL) is an optical Fourier conversion surface with respect to the illumination pupil plane. Further, the pupil intensity distribution refers to an illumination pupil plane of the illumination optical system or a light intensity distribution (luminance distribution) in a plane optically shared with the illumination pupil plane. When the number of wavefront divisions of the micro-eye-eye lens 5 is relatively large, the overall light intensity distribution formed on the incident surface of the micro-eye lens 5 is equal to the secondary light source 201027266. The hologram ρκ·α (the overall light intensity distribution of the κ. body (the pupil intensity distribution) shows a high correlation ' correlation ) £ Therefore, the incident surface of the micro fly-eye lens 5 and the optical surface of the human eye can be optically The light intensity distribution in the conjugated face is called the pupil intensity distribution. In the configuration of FIG. 1, the spatial light modulation soap element SU, the relay optical system 4, and the micro fly's eye lens 5 are configured to form a distribution of the pupil intensity distribution in the illumination pupil on the rear side of the micro fly's eye lens 5. Optical system. Referring to Fig. 2, the pilot member 2 in the spatial light modulation unit SU has a triangular prism shape extending in the X direction, for example. The light from the light source LS passing through the light beam transmitting unit 1 is reflected by the first reflecting surface 2a of the light guiding member 2, and then incident on the spatial light modulator 3. The light modulated by the spatial light modulator 3 is reflected by the second reflecting surface 2b of the light guiding member 2 and guided to the relay optical system 4. As shown in FIG. 2 and FIG. 3, the spatial light modulator 3 includes a body 3a having a plurality of mirror elements SE arranged in two dimensions, and a driving unit 3b for individually controlling the driving of the plurality of mirror elements SE. . In order to simplify the description and the illustration, the body 3a of the spatial light modulator 3 shown in FIGS. 2 and 3 includes a configuration example of 4x4=16 mirror elements SE, but actually includes a majority far more than 6 Mirror element SE. Referring to FIG. 2, the light ray L1 is incident on the mirror element SEa of the plurality of mirror elements SE in the ray group incident on the first reflecting surface 2a of the light guiding member 2 in a direction parallel to the optical axis AX. L2 is incident on the mirror element SEb different from the mirror element SEa. Similarly, the light ray L3 enters the mirror element SEc different from the mirror elements SEa and SEb, and the light ray L4 enters the mirror element 201027266 SEd which is different from the mirror elements SEa to SEc. The mirror elements SEa to SEd apply the set spatial modulation to the light L] to L4 in accordance with the position of the mirror elements SE&~SEd. The spatial light modulator 3 is configured such that a reference state (hereinafter referred to as a "reference state") set along a plane (XY plane) of the reflection surface of all the mirror elements SE is along the optical axis AX The light rays incident in the parallel direction are reflected by the respective mirror elements SE of the spatial light modulator 3, and then reflected by the second reflection surface 2b of the light guiding member 2 in a direction substantially parallel to the optical axis AX. Further, the surface of the spatial light modulator 3 in which a plurality of ® mirror elements SE are arranged is positioned at the front focus position of the relay optical system 4 or in the vicinity of the relay optical system 4. Therefore, the light beams of a predetermined angular distribution are reflected by the mirror elements SEa to SEd of the spatial light modulator 3, and the predetermined light intensity distributions SP1 to SP4 are formed on the incident surface 5a of the micro fly's eye lens 5. That is, the relay optical system 4 converts the angle 5 of the emitted light from the mirror elements SEa to SEd of the spatial light modulator 3 to the far-field region (the wave-diffraction region of the spatial light modulator 3). Framiliofer diffraction area )' is the position on the incident surface 5a _. In this manner, the relay optical system 4 constitutes a collecting optical system that becomes optical on the arrangement surface of the plurality of mirror elements SE of the spatial light modulator 3 in accordance with the light passing through the spatial light modulator 3 The surface of the Fourier transform, that is, the incident surface 5a of the micro fly's eye lens 5 forms a predetermined light intensity distribution. The light intensity distribution (the pupil intensity distribution) of the secondary light source formed by the micro fly's eye lens 5 corresponds to the light intensity distribution formed on the incident surface 5a of the spatial light modulator 3 and the relay optical system 4.
201027266 二.—',儿.CIOC 如圖3所示間光調變器3是包含多數個微反射鏡 要素SE的可動多重51射鏡‘逞些微反射鏡要素SE在將$ 面形狀的反射面作為上表面的狀態下、沿著1個平面而規 則地且二維性排列。各反射鏡要素SE為可動的,其反射 面的傾斜、亦即反射面的傾斜角及傾斜方向藉由根據控制 部CP、的指令而作動的驅動部3b來獨立控制^各反射鏡要 素SE可將與其反射面平行的兩個方向、即相互正交的兩 個方向(例如X方向以及Y方向)作為旋轉軸,僅連續性 或離散性旋轉所希望的旋轉角度。亦即,可對各反射鏡要 素SE的反射面的傾斜進行二維控制。 再者,當使各反射鏡要素SE的反射面進行離散性旋 轉時,可以多個狀態(倒如,*…' -2.5度' -2.0度、* * * 0度、+0.5度· * * +2.5度、* * * )切換控制旋轉角。圖 3表示外形為正方形的反射鏡要素SE,但反射鏡要素SE 的外形形狀並不限定於正方形。然而,從光利用效率的觀 點考慮,可為能夠以反射鏡要素SE的間隙變小的方式排 列的形狀(可最密集填充的形狀)。而且,自光利用效率的 觀點考慮> 1將相鄰的兩個反射鏡要素SE的間隔抑制為 所需的最小限度。 本實施形態中,作為空間光調變器3,使用例如使二 維排列的多個反射鏡要素SE的朝向分別連續變化的空間 光調變器。作為如此的空間光調變器,可使用例如日本專 利特表平10 — 503300號公報以及與其相對應的歐洲專利 公開第779530號公報、日本專利特開2004— 78136號公報 201027266201027266 II.—', children. CIOC As shown in Fig. 3, the inter-optical modulator 3 is a movable multi-mirror 51 containing a plurality of micro-mirror elements SE. These micro-mirror elements SE are in the reflecting surface of the surface shape In the state of the upper surface, they are regularly and two-dimensionally arranged along one plane. Each of the mirror elements SE is movable, and the inclination of the reflection surface, that is, the inclination angle and the inclination direction of the reflection surface are independently controlled by the drive unit 3b that is actuated according to the command of the control unit CP, and the respective mirror elements SE can be independently controlled. The two directions parallel to the reflecting surface, that is, the two directions orthogonal to each other (for example, the X direction and the Y direction) are used as the rotating shaft, and the desired rotating angle is rotated only continuously or discretely. That is, the tilt of the reflecting surface of each of the mirror elements SE can be two-dimensionally controlled. Further, when the reflection surface of each of the mirror elements SE is discretely rotated, it is possible to have a plurality of states (for example, *...' -2.5 degrees' - 2.0 degrees, * * * 0 degrees, + 0.5 degrees * * * +2.5 degrees, * * * ) Switch control rotation angle. Fig. 3 shows a mirror element SE having a square shape, but the outer shape of the mirror element SE is not limited to a square. However, from the viewpoint of light use efficiency, it is possible to have a shape (a shape that can be most densely filled) in such a manner that the gap of the mirror element SE becomes small. Further, from the viewpoint of light use efficiency, > 1 suppresses the interval between two adjacent mirror elements SE to a minimum required. In the present embodiment, as the spatial light modulator 3, for example, a spatial light modulator that continuously changes the directions of the plurality of mirror elements SE arranged in two dimensions is used. As such a spatial light modulator, for example, Japanese Patent Laid-Open No. Hei 10-503300, and the corresponding European Patent Publication No. 779530, Japanese Patent Laid-Open No. 2004-78136, 201027266
_______.C1C)C 以及與其祁對應的美國專利第6,9C敗9i5號公報、5尽專 利特表2006 —5243纠號公報以及與其相對應的美國專利 第7.095,546號公報、以及日本專利特開2006—] 13437號 公報中所揭示的空間光調變器。再者,亦可以離散性具有 多個階段的方式,來控制二維排列的多個反射鏡要素SE 的朝向。 如此,空間光調變器3中,藉由根據來自控制部CR 的控制訊號而作動的驅動部3 b的作用,使得多個反射鏡要 系SE的安勢分別座生變化’從叩分別沿規定的方向設定 各反射鏡要素SE。藉由空間光調變器3的多個反射鏡要素 SE而分別以規定角度所反射的光,於微複眼透鏡5的入射 面5a中形成所希望的光強度分佈,進而在微複眼透鏡5 的後側焦點面、或微複眼透鏡5附近的照明光瞳(配置有 孔徑光闌6的位置)處,形成具有所希望的形狀及大小的 光瞳強度分佈。再者,也在與孔徑光闌6光學性共軛的其 他照明光光瞳位置,亦即成像光學系統9的光瞳位置以及 φ 投影光學系統PL的光光瞳位置(配置有孔徑光闌AS的位 置),形成所希望的光瞳強度分佈。 就曝光裝置而言,為了將光罩Μ的圖案高精度且忠實 地轉印至晶圓W,重要的是,依據與圖案特性相對應的適 當的照明條件來進行曝光。本實施形態中,具備多個反射 鏡要素SE的姿勢分別單獨進行變化的空間光調變器3,來 作為於照明光瞳中可變性地形成光強度分佈的機構。因 此,可藉由空間光調變器3的作用,而使形成於照明光瞳 15 201027266" 的光瞳強度分佈(進而照明條件)自由且迅速地進行變化° 然而5當未將作為最終.的被照射面的晶圓w上的照度 分钸以及與晶圓W上各點相關的光瞳強度分佈調整為所 希望的分佈〔例如均勻的分佈)時,則無法將光罩Μ的微 乡s圖案準確地轉印至晶園W上ε因此,本實施形態包括: 照度分你測量部i 〇,對投影光學系統PL的像面中的照度 分佈進行測量;光瞳強度分佈測量部丨1 5依據經由投影光 學系統PL的光,而對投影光學系統PL的曈面中的光瞳強 度分佈進行測量;以及控制部CR,根據照度分佈測量部 10的測量結果及光瞳強度分佈測量部11的測量結果,而 對空間光調變器3的多個光學要素SE的姿勢進行控制。 照度分佈測量部1 〇根據眾所周知的構成;對投影光學 系統PL的像面中的照度分佈進行監視(monitor)。光瞳強 度分佈測量部11包括:電荷耦合元件(charge coupled device, CCD)攝像部,電荷耦合元件攝像部具有攝像面, 且此攝像面配置於與例如投影光學系統PL的瞳位置為光 學性共ί厄的位置,並且,對投影光學系統PL的像面(亦 即被照射面)上的各點的相關光瞳強度分佈(入射至各點 中的光線形成於投影光學系統PL的瞳面上的光瞳強度分 佈)進行監視。關於光瞳強度分佈測量部11的詳細構成以 及作用,可參照例如美國專利公開第2008/0030707號公 報。 以下的說明中,為了使本實施形態的作用效果易於理 解,而於微複眼透鏡5的後側焦點面或微複眼透鏡5附近 201027266 ;一' i 二 pu.doc, 的照明光曈' 形成圖4所示的包含2個橢圓形的實質性面 光源(以下 '簡稱為「面光源20s及20b的2極狀光瞳 強度分佈(二次光源)20。而且‘於以下的說明中,當簡 稱「照明光瞳」時,是指微複眼透鏡5的後侧焦點面或微 複眼透鏡5陌近的照明光瞳。 請參照圖4,形成於照明光瞳的2極狀光瞳強度分侑 20、具有夾著光軸AX沿Z方向隔開間隔的一對面光源20a 以及20b。形成2極狀光瞳強度分饰20的光如圖5所示, ⑩ 入射至微複眼透鏡5的縱橫且密集排列的多數個的矩形微 透鏡5b之中、即圖中標註著影線(hatching)的多個微透 鏡5ba。但是,圖5中為了使圖式明確化,而使構成微複 眼透鏡5的矩形微透鏡5b的數量表現為遠少於實際數量。 如此,微複眼透鏡5構成如下的光學積分器:該光學 積分器具有二維排列的多個單位波前分割面(各微透鏡5b 的入射面)、且位在與空間光調變器3的多個反射鏡要素 SE的排列面成為光學性傅立葉轉換的面上。而且,微複眼 @ 透鏡5的二維排列的多個單位波前分割面分別與作為被照 射面的光罩Μ (進而晶圓W)光學性共輛。 再者,於起到本實施形態的效果的範圍内,亦可將微 複眼透鏡5的二維排列的多個單位波前分割面配置於:自 與空間光調變器3的多個反射鏡要素SE的排列面成為光 學性傅立葉轉換的面為離焦(defoucs)的位置。而且,於 起到本實施形態的效果的範圍内,亦可將微複眼透鏡5的 二維排列的多個單位波前分割面配置於:自與作為被照射 17 201027266_______.C1C)C and U.S. Patent No. 6,9C, No. 9i5, No. 5, Patent No. 2006-5243, and corresponding US Patent No. 7.095,546, and Japanese Patent The spatial light modulator disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 13437. Further, the orientation of the plurality of mirror elements SE arranged in two dimensions may be controlled in a manner in which the discreteness has a plurality of stages. In this way, in the spatial light modulator 3, by the action of the driving portion 3b that is actuated according to the control signal from the control portion CR, the plurality of mirrors are separated from each other by the SE. Each mirror element SE is set in a predetermined direction. The light reflected at a predetermined angle by the plurality of mirror elements SE of the spatial light modulator 3 forms a desired light intensity distribution in the incident surface 5a of the micro-surrounded eye lens 5, and further in the micro fly's eye lens 5. At the rear focus surface or the illumination pupil (the position where the aperture stop 6 is disposed) in the vicinity of the micro fly's eye lens 5, a pupil intensity distribution having a desired shape and size is formed. Furthermore, other illumination light pupil positions that are optically conjugate with the aperture stop 6, that is, the pupil position of the imaging optical system 9, and the optical pupil position of the φ projection optical system PL (configured with the aperture stop AS) Position) to form the desired pupil intensity distribution. In the case of the exposure apparatus, in order to transfer the pattern of the mask enamel to the wafer W with high precision and faithfulness, it is important to perform exposure in accordance with appropriate lighting conditions corresponding to the pattern characteristics. In the present embodiment, the spatial light modulator 3 in which the postures of the plurality of mirror elements SE are individually changed is used as a mechanism for variably forming a light intensity distribution in the illumination pupil. Therefore, by the action of the spatial light modulator 3, the pupil intensity distribution (and thus the illumination condition) formed in the illumination pupil 15 201027266" can be freely and rapidly changed. However, when it is not to be final. When the illuminance distribution on the wafer w of the illuminated surface and the pupil intensity distribution associated with each point on the wafer W are adjusted to a desired distribution (for example, a uniform distribution), the micro-town of the mask cannot be s The pattern is accurately transferred onto the crystal garden W. Therefore, the present embodiment includes: the illuminance is divided into the measuring unit i 〇, and the illuminance distribution in the image plane of the projection optical system PL is measured; the pupil intensity distribution measuring unit 丨 15 Measuring the pupil intensity distribution in the pupil plane of the projection optical system PL according to the light passing through the projection optical system PL; and the control unit CR according to the measurement result of the illuminance distribution measuring section 10 and the pupil intensity distribution measuring section 11 The measurement results are controlled to control the posture of the plurality of optical elements SE of the spatial light modulator 3. The illuminance distribution measuring unit 1 monitors the illuminance distribution in the image plane of the projection optical system PL according to a well-known configuration. The pupil intensity distribution measuring unit 11 includes a charge coupled device (CCD) imaging unit, and the charge coupled device imaging unit has an imaging surface, and the imaging surface is disposed optically with, for example, a pupil position of the projection optical system PL. The position of the ί, and the relevant pupil intensity distribution at each point on the image plane (ie, the illuminated surface) of the projection optical system PL (the light incident on each point is formed on the pupil plane of the projection optical system PL) The intensity distribution of the pupil is monitored. For the detailed configuration and function of the pupil intensity distribution measuring unit 11, reference is made to, for example, U.S. Patent Publication No. 2008/0030707. In the following description, in order to make the effect of the present embodiment easy to understand, the rear side focal plane of the micro fly's eye lens 5 or the vicinity of the micro fly's eye lens 5 201027266; an 'i pu.doc' illumination 曈' formation map 4 shows a substantially elliptical solid surface light source (hereinafter referred to as "the two-pole pupil intensity distribution (secondary light source) 20 of the surface light sources 20s and 20b. Moreover, in the following description, In the case of "illumination pupil", it means an illumination pupil that is in the vicinity of the rear focal plane of the micro fly's eye lens 5 or the micro fly-eye lens 5. Referring to Fig. 4, the 2-pole pupil intensity distribution formed in the illumination pupil is 20 A pair of surface light sources 20a and 20b spaced apart in the Z direction with the optical axis AX interposed therebetween. The light forming the 2-pole pupil intensity distribution 20 is as shown in FIG. 5, and 10 is incident on the vertical and horizontal directions of the micro fly's eye lens 5. Among the plurality of rectangular microlenses 5b arranged, that is, a plurality of microlenses 5ba hatched in the figure. However, in FIG. 5, in order to clarify the drawings, the rectangles constituting the micro fly's eye lens 5 are formed. The number of microlenses 5b appears to be much smaller than the actual number. Thus, The fly-eye lens 5 constitutes an optical integrator having a plurality of unit wavefront split faces (incidence faces of the respective microlenses 5b) arranged in two dimensions, and having multiple reflections in the spatial light modulator 3 The arrangement surface of the mirror element SE is the surface of the optical Fourier transform. Further, the plurality of unit wavefront division surfaces of the microscopic eye @ lens 5 are arranged in two dimensions and the mask 作为 (and thus the wafer W) as the illuminated surface. Further, in a range in which the effects of the embodiment are achieved, a plurality of unit wavefront split surfaces in which the micro fly's eye lens 5 is two-dimensionally arranged may be disposed in the self-spaced light modulator 3 The arrangement surface of the plurality of mirror elements SE is a position where the surface of the optical Fourier transform is defoucs. Further, in the range of the effect of the present embodiment, the two-dimensional eye lens 5 may be two-dimensionally Arranged multiple unit wavefront split planes are arranged in: self-contained as being illuminated 17 201027266
二i jpU.CiCK 面的光覃1、4 (晶圓W )是光學性共軏的面為離焦的位置。 圖6是對本實施形態的作闬進行說明的圖。在圖6 士‘ 為了使說明易於理解而表示為:構成微複眼透鏡5的多數 個微透鏡5b之中的與2極狀光瞳強度分佈20相對應地使 光人射的4個微透鏡5ba '以及未入射光的1個微透鏡 5bb。而且,由影線區域表示人射至4個微透鏡5ba的光之 沿\ Z平面的強度分佈。此.處:影線區域的Y方向禹度越 大的位置上5入射光的強度越大。 本實施形態中,空間光調變器3具有遠遠多於構成微 複眼透鏡5的微透鏡5b數量的多數個反射鏡要素SE,且 可使該些反射鏡要素SE的姿勢單獨變化。因此,可藉由 空間光調變器3的作罔,而使形成於微複眼透鏡5的入射 面5a上的光強度分佈自由變化'進而使入射至微複眼透鏡 5的各微透鏡5b的入射面(亦即各單位波前分割面)中之 光的強度分佈自由變化。 在圖6所示的例子中,入射至位於+Z方向的2個微透 鏡5ba中的光的強度分佈相互相同,且入射至位於-Z方向 的2個微透鏡5ba中的光的強度分佈相互相同。而且,入 射至+Z方向側的2個微透鏡5ba中的光的強度分佈、與入 射至-Z方向側的2個微透鏡5ba中的光的強度分佈是相對 於光車由AX而對稱。 具體而言,入射至+Z方向惻的2個微透鏡5ba中的光 的強度分佈中‘於+Z方向側的一端中強度最大,於沿著Z 方向的中央位置中的強度最小,自方向側的一端朝向中The pupils 1 and 4 (wafer W) of the second i jpU.CiCK plane are positions where the optical conjugate surface is out of focus. Fig. 6 is a view for explaining the operation of the embodiment. In order to make the description easy to understand, it is shown that the four microlenses 5ba of the plurality of microlenses 5b constituting the micro fly's eye lens 5 that emit light in accordance with the two-pole pupil intensity distribution 20 are shown. 'and one microlens 5bb that is not incident on the light. Further, the intensity distribution of the light incident on the \Z plane of the light incident on the four microlenses 5ba by the hatched area is indicated by the hatched area. At this point, the intensity of the incident light is larger at the position where the Y-direction of the hatched area is larger. In the present embodiment, the spatial light modulator 3 has a plurality of mirror elements SE which are far larger than the number of microlenses 5b constituting the micro eye lens 5, and the postures of the mirror elements SE can be individually changed. Therefore, the light intensity distribution formed on the incident surface 5a of the micro-antificate eye lens 5 can be freely changed by the operation of the spatial light modulator 3, and the incident of each microlens 5b incident on the micro fly's eye lens 5 can be made. The intensity distribution of the light in the face (ie, the wavefront split face of each unit) is free to change. In the example shown in FIG. 6, the intensity distributions of the light incident on the two microlenses 5ba located in the +Z direction are the same as each other, and the intensity distributions of the light incident on the two microlenses 5ba located in the -Z direction are mutually the same. Further, the intensity distribution of the light incident on the two microlenses 5ba on the +Z direction side and the intensity distribution of the light incident on the two microlenses 5ba on the -Z direction side are symmetrical with respect to the light vehicle by AX. Specifically, in the intensity distribution of the light incident on the two microlenses 5ba in the +Z direction ', the intensity is the largest at the end on the +Z direction side, and the intensity at the center position along the Z direction is the smallest, the self direction One side of the side is facing
201027266 G0C 央位置強度單調減少5且自中央位置朝向-z万向側一端強 変置調增大。此時,於與作為被照射面的光置]、4 (進而晶 圚W)光學性共軛的光罩遮器8的位置上:入射至4個微 透鏡5ba的光的強度分佈疊加後,形成大致均勻的照度分 1句° 到達晶圓W上的曝光區域(掃描曝光的情形時為靜止 曝光區域)内的中心點的光、亦即到達光罩遮器S的開口 部的中心點P1的光,如圖6中虛線所示,是通過4個微 φ 透鏡5ba的中央位置的強度最小的光。因此,如圖7的中 央圖所示,到達中心點P1的光在照明光瞳中所形成的2 極狀光強度分佈、亦即與中心點P1相關的光瞳強度分佈 21中,+Z方向側的面光源2〗a的光強度與-Z方向側的面 光源21b的光強度相互相等,且其光強度相對較小。 自晶圓W上的曝光區域内中心點沿Y方向到達一方 的周邊點的光、亦即到達光罩遮器8的開口部的+Z方向側 周邊點P2的光之中,來自+Z方向側的2個微透鏡5ba的 φ 光,如圖6中細實線所示是通過-Z方向側一端的強度相對 較大的光,而來自-Z方向側的2個微透鏡5ba的光如圖6 中粗實線所示是通過-Z方向側一端的強度最大的光。因 此,如圖7的左側圖所示,於到達周邊點P2的光在照明 光瞳上所形成的2極狀光強度分佈、亦即與周邊點P2相 關的光瞳強度分佈22中,+Z方向侧的面光源223的光強 度相對較大,-Z方向側的面光源22b的光強度最大。 自晶圓W上的曝光區域内中心點沿著Y方向到達另 201027266 ^'一丄 一pi-.Cd 一方的局遣點的光 '亦即到達光置遮器s的開口部的-z方 南便周連點P?的光口 來自-Z方向側的2偃微透鏡5bs 的光如圖ό T粗實線所示是通過万向側一端的強度最 大的光,而來g -Ζ方向侧的2個微适鏡5ba的光如圖6中 細實線所示是通過+Z方向側一端的強度相對較大的光。因 此‘如圖7的右側圖所示,於到達周邊點P3的光在照明 光瞳中所形成的2極狀光強度分佈、亦即與周邊點P3相 關的光瞳強度分佈23中5 +Z方向側的面光源23a的光強 度最大,-Z方向侧的面光源23b的光強度相對較大。 如此,在圖6及圖7所示的例子中,使被照射面8上 的與規定的1點P2相關的光瞳強度分佈為第1光瞳強度 分佈 '且使與被照射面8上的上述規定的1點P2不同的 其他1點(P1或P3)相關的光瞳強度分佈為第2光瞳強 度分佈。以此方式,形成於多個單位波前分割面的各自中 的光強度分佈成為2種或2種以上的光強度分佈。 在上述圖6及圖7所示的例子中,換言之,包括:第 1設定步驟’設定被照射囬上的與規定的1點P 2相關的光 瞳強度分佈目標、即第1目標光曈強度分佈;以及第2設 定步驟,設定與被照射面上的規定的1點P2不同的其他1 點(P1或P3)相關的光瞳強度分佈目標、即第2目標光 瞳強度分佈。此處,以使與規定的1點P2相關的光瞳強 度分佈為第1目標光瞳強度分佈,且使與其他]點(P]或 P3)相關的光瞳強度分钸為第2目標光瞳強度分佈之方 式·對形成於照明光瞳的光曈強度分佈進行調整,並且分 201027266 . —jji. ;doc 別對形成於多個單位波前分割面的各自中的光強度分佈進 行調整。 此時.亦可包括:第1區分步驟,根據上述多個單位 波前分割面叩區分苐1目標光瞳強度分佈,第i光強度言卞 异少称’分別計异與經區分的弟】目標光瞳強度分佈中' 上述規定的ί點相對應的位置的光強度;第2區分步驟, 根據上述多個單位波前分割面而區分第2目標光曈強度分 佈;第2光強度計算步驟,分別計算與經區分的第2目標 © 光瞳強度分佈中、上述其他1點相對應的位置的光強度; 以及算出步驟,根據與第1及第2光強度計算步驟所計算 的規定的1點Ρ2及其他1點(Ρ1或Ρ3)相對應的位置的 光強度5而分別計算應形成於多個單位波前分割面上的光 強度分佈。 其次,在圖8所示的例子中,使圖6中與入射至+Ζ方 向側的2個微透鏡5ba中的光的強度分佈為相同分佈的 光、入射至-Z方向侧的微透鏡5ba ;使圖6中與入射至-Z φ 方向側的2個微透鏡5ba中的光的強度分佈為相同分佈的 光、入射至+Z方向側的微透鏡5ba。於圖8所示的例子中, 亦以與圖6所示之例子相同的方式,於與作為被照射面的 光罩Μ(進而晶圓W )為光學性共車厄的光罩遮器8的位置, 使入射至4個微透鏡5ba中的光的強度分佈疊加,而形成 大致均勻的照度分佈。 而且,到達光罩遮器8的開口部的中心點P1的光, 如圖8中虛線所示,是通過4個微透鏡5ba的中央位置的 201027266 ;jpi:.aoc ^ 強度最+的光。因此·戈c圖9的中央匮所示·在與甲心點 P1括關的光瞳強度分钸2 ] 士 ' -Z方向側的面光源21 ε的 光強度與-Ζ方向侧的面光源21 D的光強変相互祁等且其 光強度相對較小。 到達光罩遮器8的開口部的周邊點Ρ2的光中,來自 -Ζ方向側的2個微透鏡5ba的光如圖8中粗實線所示是通 過-Z方向侧一端的強度最大的光,來自-Z方向側的2個微 透鏡5ba的光如圖8中細實線所示是通過-Z方向側一端的 強度相對較大的光°因此,如圖9的左側圖所示,在與周 邊點P2相關的光瞳強度分佈22中,+Z方向侧的面光源 22a的光強度最大,-Z方向側的面光源22b的光強度相對 較大。 到達光罩遮器8的開口部的周邊點P3的光中,來自 +Z方向側的2個微透鏡5ba的光如圖8中細實線所示是通 過+Z方向側一端的強度相對較大的光5來自-Z方向側的2 個微透鏡5ba的光如圖8中粗實線所示是通過+Z方向側一 端的強度最大的光。因此,如圖9的右側圖所示,在與周 邊點P3相關的光瞳強度分佈23中,方向側的面光源 23a的光強度相對較大,-Z方向側的面光源23b的光強度 最大。 然而,例如請參照圖6,可理解如下情形:於光學性 理想狀態下,入射至4個微透鏡5ba中的光的強度分佈均 勻且相互相等時,於光罩遮器8的位置上形成有均勻的照 度分彳布5進叩亦於作马氣終被照射®的品圓τ、)ν丄形政β Θ 201027266 ΛΙ.ΟΟί 勻的照変分佈。而且·可理解如下情形:在與光罩遮器s 的開口部的各點PI、P2、P3相關的光瞳強度分佈21、22 ' 23 甲·各面光源 2]a、2]b、22a、22b、23a、23b 的光強 曼相互相等。亦即,與光罩遮器8的開口部内的各點相關 的光目童強度分佈變得均勻5進而與晶圓W上的曝光區域内 的各相關的光瞳強度分佈亦分別變得均勻。 然而,實際的光學系統中,即便將入射至所需微透鏡 5ba中的光的強度分佈設定為均勻且相互相等,亦會因各 ⑩ 種原因,而未必能於光罩遮器8的位置中獲得均勻的照度 分佈,以及於光罩遮器8的開口部内的各點獲得均勻的光 瞳強度分佈。進而,即便於光罩遮器8的位置中獲得均勻 的照度分佈以及於各點獲得均勻的光瞳強度分佈,亦未必 能於晶圓W上獲得均勻的照度分佈,以及於晶圓W上的 曝光區域内的各點獲得均勻的光瞳強度分佈。 該情況意味著,於實際的光學系統中,為了於晶圓W 上獲得均勻的照度分佈,而要求將例如光罩遮器8的位置 φ 中的照度分佈調整為並非均勻的所需分佈。而且,該情況 意味著,為了於晶圓W上的曝光區域内的各點上獲得均勻 的光瞳強度分佈,而要求將例如與光罩遮器8的開口部内 的各點相關的光瞳強度分佈調整為並非均勻的所需分佈。 請參照圖6〜圖9,可理解如下情形:在本實施形態 中,可藉由使用空間光調變器3,使入射至微複眼透鏡5 的各微透鏡5b的入射面中的光的強度分佈適當變化,而將 形成於光罩遮器8的位置上的照度分佈維持大致均勻,且 201027266 二…、_!)u.ck)。 對與光罩遮器-g的開α铄円的點PI、Ρ2 \ P3相關的光瞳 強度分钸獨立進行調整。進而’易於推測到如^情形:可 藉由使八射至各微透鏡5b的射面(各單位波前分割面; 中的光的強度分佈適當變化,而將形成於光罩遮器s的位 置上的照度分佈調整為所希望的分佈,且將與光罩遮器8 的開〇部内的各點相關的光瞳強度分佈調整為所希望的分 佈。 亦即,本實施形態中,控制部CR對空間光調變器3 的多個反射鏡要素SE的姿勢進行單獨控制,使形成於微 複眼透鏡5的多個單位波前分割面的各自之中的光強度分 佈適當變化,藉此便可將位於與光軍遮器8的位置為光學 性共輛的位置上的晶圓V、. 7上的曝光區域(或者光罩Μ上 的照明區域)中所形成的照度分佈調整為所希望的分佈, 且將與晶圓W上的曝光區域(或者光罩Μ上的照明區域) 内的各點相關的光瞳強度分佈分別調整為所希望的分佈。 如此,控制部CR具有如下功能:對空間光調變器3進行 控制,以依據經由中繼光學系統4及微複眼透鏡5之來自 空間光調變器3的光,將形成於照明光瞳的光瞳強度分佈 調整為所需分佈,且分別將形成於微複眼透鏡5的多個單 位波前分割面的各自之中的光強度分佈調整為所需分佈。 具體而言,本實施形態中,控制部CR根據照度分佈 測量部10的測量結果及光瞳強度分佈測量部1]的測量結 果,對空間光調變器3的多個反射鏡要素SE的姿勢進行 控制·籍此便可將位於投影光學系統PL的像面位置上的 201027266 i .QOv 晶園W上的曝光區域宁所彤成的照度分佈調整為所希望 的分佈:例如均与的分佈)‘並且分别將入射至晶園W上 的曝光區域內的各點之中的光在投影光學系統PL的瞳位 置所形成的光瞳強度分佈調整為所希望的分佈(例如均勻 的分稀)& 如以上所述' 本實施形態的照明光學系統(1〜】1 )中, 可將作為最終被照射面的晶圓w上的照度分佈、及與晶圓 W上的曝光區域内的各點相關的光瞳強度分佈調整為所 參 希望的分佈。因此:本實施形態的曝光裝置(1〜]]、MS、 PL、WS)中,可使用能夠將晶圓W上的照度分佈及與晶 圓W上的曝光區域内的各點相關的光瞳強度分佈調整為 所希望分佈的照明光學系統(1〜11 ),依據與光罩Μ的微 細圖案相對應的適當的照明條件以進行良好的曝光,進而 可遍及整個曝光區域以所希望的線寬將光罩Μ的微細圖 案準確地轉印至晶圓W上。 再者,上述實施形態中,於空間光調變單元SU與微 φ 複眼透鏡5之間的光路中,配置著起到傅立葉轉換透鏡之 作闬的作為聚光光學系統的中繼光學系統4。然而,並非 限定於此,亦可代替中繼光學系統4,而配置包含無焦 (afocal)光學系統、圓錐轉向鏡(conical axicon )系統' 變焦光學系統等的光學系統。此種光學系統揭示於國際公 開第2005/076045A1號小冊子、以及與其相對應的美國專 利申請案公開第2006/0170901A號中。 而且,上述說明中,以照明光瞳形成有2極狀光瞳強 201027266 ^-:M_:pU.d〇C· 度分佈的變形照明、亦即2極照明為例子·對本發明的作 用效果進行了說明。然而·並非限定於2極照明·例如對 形成有輪帶狀光瞳強度分佈的輪帶狀照明、形成有2極狀 以外的其他多極狀光瞳強度分佈的多極照明等,亦可同樣 地適用本發明,從而獲得相同的作用效果。 而且·在上述說明中,作為波前分割型的光學積分器‘ 以縱橫且二維排列著透鏡要素的微複眼透鏡5為例子,對 本發明的作用效果進行了說明。然而,對於例如美國專利 第6,913,373號公報所揭示的柱狀微複眼透鏡,亦可同樣 地適用本發明,從而獲得相同的作用效果。 再者,當適用柱狀微複眼透鏡時,柱狀微複眼透鏡具 有沿橫截光軸的第1方向並列排列的多個圓筒面形狀的折 射面(第1柱狀透鏡群)、沿與橫截光軸的第1方向正交的 第2方向並列排列的多個圓筒面形狀的折射面(第2柱狀 透鏡群),故而藉由該些第1以及第2柱狀透鏡群來定義單 位波前分割面。 再者,在上述實施形態中,作為光學積分器,使用了 微複眼透鏡5。亦可取而代之,使用内面反射型的光學積 分器(典型性的是積分柱(rod integrator))。此時,於中 繼光學系統4的後侧,以使中繼光學系統4的前側焦點位 置與中繼光學系統4的後侧焦點位置一致的方式來配置聚 光透鏡,並以入射端定位於該聚光透鏡的後側焦點位置或 其附近的方式來配置積分柱。此時,積分柱的射出端位於 光罩遮器8處。當使用積分柱時,可將該積分柱下游的成 201027266 像光學系統9内的、與投影光學系統PL的孔徑光闌AS 的位置為光學性共較的位置稱為照明瞳面。而且·於積分 柱的八射面的位置带成有照明曈面的二次光源的虛像 (virtual image .)、故而可將該位置以及與該位置為光學性 共軛的位置均稱為照明曈面。 此處‘穿過中繼光學系統4的後側焦點位置與聚光透 鏡的前側焦點位置一致的位置而興光軸垂直之面5與使闬 微複眼透鏡5時二維排列著多個單位波前分割面之面相對 ❿ 應。因此,當使闬積分柱時,亦可藉由根據上述實施形態, 控制穿過中繼光學系統4的後侧焦點位置之面中的光強度 分佈,而獲得與上述實施形態相同的效果。 而且’在上述說明中;作為具有二維排列且被單獨控 制的多個光學要素的空間光調變器5使用可對二維排列的 多個反射面的朝向(角度:傾斜)進行單獨控制的空間光 調變器。然而,並非限定於此,亦可使用例如可對二維排 列的多個反射面的高度(位置)進行單獨控制的空間光調 φ 變器。作為如此之空間光調變器,可使用例如日本專利特 開平6 — 281869號公報以及與其相對應的美國專利第 5,312,513號公報、以及曰本專利特表2004 —5206〗8號公 報以及與其相對應的美國專利第6,885,493號公報之圖Id 中所揭示的空間光調變器。該些空間光調變器中,可藉由 形成二維的高度分佈而對入射光施加與繞射面相同的作 用。再者,上述具有二維排列的多個反射面的空間光調變 器,亦可根據例如日本專利特表2006 —513442號公報以及 201027266 , 與其相對應的美國專利第6,S9L655號公報、日本專利特 表2005— ;524H2號公報以及與其箱對應的美國專利公開 第2005/0095749號公報的揭示進行變形。 而且;在上述說明中,使用了具有多個反射鏡要素的 反射型空間光調變器,但是並非限定於此 '亦可使用例如 美國專利第5,229,872號公報所揭示的穿透型空間光調變 器。 再者,在上述實施形態中,亦可代替光罩,而使用基 於規定的電子資料以形成規定圖案的可變圖案形成裝置。 若使用如此的可變圖案形成裝置,則即便圖案面為縱向設 置,亦可使對同步精度造成的影響降至最低限度。再者, 作為可變圖案形成裝置5可使甩例如包含基於規定的電子 資料而驅動的多個反射元件的數位微鏡裝置(digital micromiiror device,. DMD)。使用有 DMD 的曝光裝置,揭 示於例如曰本專利特開2004 — 304135號公報'國際專利公 開第2006/080285號小冊子以及與其相對應的美國專利公 開第2007/0296936號公報中。而且,除了可使用如DMD 般的非發光型的反射型空間光調變器以外,亦可使用穿透 型空間光調變器,或者亦可使闬自發光型圖像顯示元件。 再者,即便於圖案面為橫向設置時,亦可使用可變圖案形 成裝置。 另外,上述實施形態是對被照射面上的各點中的光瞳 強度分佈分別進行大致均勻地調整,但亦可將被照射面上 的各點中的光瞳強度分钸調整為並非均勻之規定分钸。而 201027266 _______.!:.00:' 且·亦可將被照射面上的各點中的光瞳強度分佈分別調整 為苑互不同的規定分钸。例如·為了修正曝光裝置自身的 田光曈強度分佈均勻性以外的原因所引起的線寬誤差、光 微影(photol丨thography)製程中與曝光裝置組合使芾的塗 佈顯影處理裝置(塗敷顯影機)或加熱/冷卻處理裝置等曝 光裝置以外之裝置所引起的線寬誤差,可將被照射面上的 各點中的光瞳強度分佈分別調整為相互不同的規定分佈。 如下所述‘半導體元件的製造步驟中的光微影步驟是 仕晶圓寻被處理體的衣面形成光阻(感光性相'料)膜之後5 於光阻膜上使電路圖案曝光,進而進行顯影處理,籍此, 形成光阻圖案。該光微影製程藉由塗佈顯影處理裝置(塗 敷顯影機)、及與該裝置連續一體設置的曝光裝置來進行, 上述塗佈顯影處理裝置具有對晶圓進行光阻塗佈的光阻塗 佈處理單元、或使曝光後的晶圓顯影的顯影處理單元等。 而且,如此的塗佈顯影處理裝置具有:例如於晶圓上 形成光阻膜之後、或顯影處理之前後,對晶圓進行加熱處 φ 理或冷卻處理等的熱處理的加熱處理裝置或冷卻處理裝 置。此處,當於晶圓面内光阻膜厚不均勻' 或者因該些熱 處理而使晶圓面内的溫度分佈不均衡時,有時照射區域内 的線寬均勻性分佈會因晶圓W上的照射區域的位置不同 而呈現不同之特性。而且,於將上述光阻圖案作為罩幕, 並對位於光阻圖案下層的被蝕刻膜進行蝕刻的蝕刻裝置 中,當晶圓面内的溫度分佈不均衡時,有時照射區域内的 線見均勻性分飾亦嘗因晶圓"W上的照射區域的位里个同 201027266201027266 G0C The central position intensity is monotonously reduced by 5 and is increased from the central position toward the -z universal side. At this time, the intensity distribution of the light incident on the four microlenses 5ba is superimposed on the position of the mask mask 8 that is optically conjugate with the light-shielding surface 4 and the wafer (the wafer W). Forming a substantially uniform illuminance in one sentence. The light reaching the center point in the exposure area on the wafer W (the still exposure area in the case of scanning exposure), that is, the center point P1 of the opening reaching the mask mask S The light, as shown by the broken line in Fig. 6, is the light having the smallest intensity passing through the center position of the four micro φ lenses 5ba. Therefore, as shown in the central view of FIG. 7, the 2-pole light intensity distribution formed by the light reaching the center point P1 in the illumination pupil, that is, the pupil intensity distribution 21 associated with the center point P1, the +Z direction The light intensity of the side surface light source 2 a is equal to the light intensity of the surface light source 21 b on the -Z direction side, and the light intensity thereof is relatively small. The light reaching the one peripheral point in the Y direction from the center point in the exposure region on the wafer W, that is, the light reaching the +Z direction side peripheral point P2 of the opening portion of the mask mask 8 is from the +Z direction The φ light of the two microlenses 5ba on the side is light having a relatively large intensity passing through one end on the -Z direction side as shown by a thin solid line in Fig. 6, and light of two microlenses 5ba from the -Z direction side is as The thick solid line in Fig. 6 shows the light having the strongest intensity at one end on the -Z direction side. Therefore, as shown in the left diagram of FIG. 7, the 2-pole light intensity distribution formed on the illumination pupil at the light reaching the peripheral point P2, that is, the pupil intensity distribution 22 associated with the peripheral point P2, +Z The light intensity of the surface light source 223 on the direction side is relatively large, and the light intensity of the surface light source 22b on the -Z direction side is the largest. From the center point in the exposure area on the wafer W along the Y direction to the other 201027266 ^'the light of the pi-.Cd side of the station', that is, the -z side of the opening of the light shielding device s The light from the south side of the point P? is from the light of the 2 偃 microlens 5bs on the -Z direction side. As shown by the thick solid line, the light with the strongest intensity at the end of the universal side is the g-Ζ direction. The light of the two micro-mirrors 5ba on the side is light having a relatively large intensity passing through one end on the +Z direction side as shown by a thin solid line in FIG. Therefore, as shown in the right side view of FIG. 7, the 2-pole light intensity distribution formed by the light reaching the peripheral point P3 in the illumination pupil, that is, the pupil intensity distribution 23 associated with the peripheral point P3 is 5 + Z. The surface light source 23a on the direction side has the largest light intensity, and the surface light source 23b on the -Z direction side has a relatively large light intensity. As described above, in the example shown in FIGS. 6 and 7, the pupil intensity distribution associated with the predetermined one point P2 on the illuminated surface 8 is the first pupil intensity distribution 'and is made on the illuminated surface 8 The pupil intensity distribution associated with the other one point (P1 or P3) different from the predetermined one point P2 is the second pupil intensity distribution. In this way, the light intensity distribution formed in each of the plurality of unit wavefront split surfaces is two or more light intensity distributions. In the example shown in FIG. 6 and FIG. 7 described above, in other words, the first setting step 'sets the pupil intensity distribution target associated with the predetermined one point P 2 that is irradiated back, that is, the first target pupil intensity. In the second setting step, the pupil intensity distribution target related to the other one point (P1 or P3) different from the predetermined one point P2 on the illuminated surface, that is, the second target pupil intensity distribution is set. Here, the pupil intensity distribution associated with the predetermined one point P2 is the first target pupil intensity distribution, and the pupil intensity associated with the other point (P] or P3) is divided into the second target light.瞳Intensity distribution method ・Adjust the pupil intensity distribution formed in the illumination pupil, and adjust the light intensity distribution formed in each of the plurality of unit wavefront division planes according to 201027266. In this case, the method may further include: a first distinguishing step of distinguishing the target pupil intensity distribution according to the plurality of unit wavefront splitting faces, and the i-th light intensity is different from the different ones. The light intensity of the position corresponding to the ί point specified by the above-mentioned target pupil intensity distribution; the second distinguishing step, the second target pupil intensity distribution is distinguished based on the plurality of unit wavefront division surfaces; and the second light intensity calculation step Calculating the light intensity at a position corresponding to the other one point in the second target source pupil intensity distribution, and the calculation step, based on the predetermined 1 calculated by the first and second light intensity calculation steps The light intensity distribution at the position corresponding to the plurality of unit wavefronts is calculated by the light intensity 5 at the position corresponding to the other point (Ρ1 or Ρ3). Next, in the example shown in FIG. 8, the intensity distribution of the light in the two microlenses 5ba incident on the +Ζ direction side in FIG. 6 is the same distribution of light, and the microlens 5ba incident on the -Z direction side is made. The intensity distribution of the light in the two microlenses 5ba incident on the -Z φ direction side in FIG. 6 is the same as that of the light, and is incident on the microlens 5ba on the +Z direction side. In the example shown in FIG. 8, in the same manner as the example shown in FIG. 6, the mask mask 8 which is an optical common vehicle with the mask Μ (and thus the wafer W) as the illuminated surface is also used. The position is such that the intensity distribution of the light incident into the four microlenses 5ba is superimposed to form a substantially uniform illuminance distribution. Further, the light reaching the center point P1 of the opening portion of the mask mask 8 is 201027266 through the center position of the four microlenses 5ba; the light having the highest intensity of jpi:.aoc ^ is shown as a broken line in Fig. 8 . Therefore, the center 匮 of the figure 9 is shown in Fig. 9. The intensity of the pupil light source 21 ε on the side of the 'Z direction' and the surface light source on the side of the -Ζ direction The light intensity of 21 D is equal to each other and its light intensity is relatively small. Among the light reaching the peripheral point Ρ2 of the opening of the mask mask 8, the light from the two microlenses 5ba on the -Ζ direction side is the strongest one passing through the one end in the -Z direction as shown by the thick solid line in FIG. Light, the light from the two microlenses 5ba on the -Z direction side is light having a relatively large intensity passing through one end on the -Z direction side as shown by a thin solid line in Fig. 8, and therefore, as shown in the left side view of Fig. 9, In the pupil intensity distribution 22 associated with the peripheral point P2, the light intensity of the surface light source 22a on the +Z direction side is the largest, and the light intensity of the surface light source 22b on the -Z direction side is relatively large. Among the light reaching the peripheral point P3 of the opening of the mask mask 8, the light from the two microlenses 5ba on the +Z direction side is relatively strong as shown by the thin solid line in Fig. 8 through the one end in the +Z direction side. The light of the large light 5 from the two microlenses 5ba on the -Z direction side is the light having the strongest intensity passing through one end on the +Z direction side as shown by the thick solid line in FIG. Therefore, as shown in the right side view of Fig. 9, in the pupil intensity distribution 23 associated with the peripheral point P3, the light intensity of the surface light source 23a on the direction side is relatively large, and the light intensity of the surface light source 23b on the -Z direction side is the largest. . However, for example, referring to FIG. 6, it can be understood that in the optical ideal state, when the intensity of light incident on the four microlenses 5ba is uniform and equal to each other, the position of the reticle 8 is formed. Uniform illuminance distribution cloth 5 叩 叩 于 作 作 作 作 τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 27 Further, it can be understood that the pupil intensity distributions 21, 22' 23 associated with the respective points PI, P2, P3 of the opening portion of the mask mask s A · each of the surface light sources 2]a, 2] b, 22a The light intensity of 22b, 23a, and 23b is equal to each other. That is, the distribution of the intensity of the light source associated with each point in the opening of the mask mask 8 is made uniform, and the intensity distribution of the pupils associated with each of the exposed areas on the wafer W is also uniform. However, in the actual optical system, even if the intensity distribution of the light incident into the desired microlens 5ba is set to be uniform and equal to each other, it may not be in the position of the reticle 8 for each of 10 reasons. A uniform illuminance distribution is obtained, and a uniform pupil intensity distribution is obtained at each point in the opening of the reticle 8 . Furthermore, even if a uniform illuminance distribution is obtained in the position of the reticle 8 and a uniform pupil intensity distribution is obtained at each point, it is not necessarily possible to obtain a uniform illuminance distribution on the wafer W, and on the wafer W. A uniform pupil intensity distribution is obtained for each point in the exposed area. This means that in an actual optical system, in order to obtain a uniform illuminance distribution on the wafer W, it is required to adjust, for example, the illuminance distribution in the position φ of the reticle 8 to a desired distribution that is not uniform. Moreover, this case means that, in order to obtain a uniform pupil intensity distribution at each point in the exposed area on the wafer W, it is required to, for example, the pupil intensity associated with each point in the opening of the reticle 8 The distribution is adjusted to the desired distribution that is not uniform. Referring to FIG. 6 to FIG. 9, it can be understood that in the present embodiment, the intensity of light incident on the incident surface of each microlens 5b of the micro-manus lens 5 can be made by using the spatial light modulator 3. The distribution is appropriately changed, and the illuminance distribution formed at the position of the reticle 8 is maintained substantially uniform, and 201027266 ......, _!) u.ck). The pupil intensity distribution associated with the point PI, Ρ2 \ P3 of the opening mask of the reticle-g is independently adjusted. Further, it is easy to estimate that the case where the intensity of the light in each of the unit wavefront splitting planes is appropriately changed by the plane of the respective microlenses 5b can be formed in the mask s The illuminance distribution at the position is adjusted to a desired distribution, and the pupil intensity distribution associated with each point in the opening portion of the reticle 8 is adjusted to a desired distribution. That is, in the present embodiment, the control unit The CR individually controls the postures of the plurality of mirror elements SE of the spatial light modulator 3, and appropriately adjusts the light intensity distribution among the plurality of unit wavefront split surfaces formed in the micro fly's eye lens 5, thereby appropriately changing The illuminance distribution formed in the exposed area on the wafer V, .7 (or the illumination area on the mask) at the position where the position of the optical mask 8 is optically shared can be adjusted to the desired The distribution of the pupil intensity distribution associated with each point in the exposed area on the wafer W (or the illumination area on the mask) is adjusted to the desired distribution. Thus, the control unit CR has the following functions: Performing on the spatial light modulator 3 The light intensity distribution formed in the illumination pupil is adjusted to a desired distribution according to the light from the spatial light modulator 3 via the relay optical system 4 and the micro fly-eye lens 5, and will be formed in the micro compound eye, respectively. The light intensity distribution of each of the plurality of unit wavefront splitting surfaces of the lens 5 is adjusted to a desired distribution. Specifically, in the present embodiment, the control unit CR measures the light intensity distribution according to the illuminance distribution measuring unit 10 and the pupil intensity distribution. The measurement result of the measuring unit 1] controls the posture of the plurality of mirror elements SE of the spatial light modulator 3, and the 201027266 i.QOv crystal garden W located at the image plane position of the projection optical system PL can be controlled. The illuminance distribution formed by the upper exposure region is adjusted to a desired distribution: for example, a uniform distribution) and the light incident on each point in the exposure region on the crystal field W is respectively in the projection optical system PL. The pupil intensity distribution formed by the 瞳 position is adjusted to a desired distribution (for example, uniform thinning) & As described above, the illumination optical system (1 to 1) of the present embodiment can be used as the final Photo W illuminance distribution on the wafer surface, and associated with each point in the exposure area on the wafer W is adjusted to the pupil intensity distribution of the reference distribution desired. Therefore, in the exposure apparatus (1 to)], MS, PL, and WS) of the present embodiment, an illuminance distribution on the wafer W and a pupil associated with each point in the exposure area on the wafer W can be used. The intensity distribution is adjusted to the desired distribution of the illumination optical system (1 to 11), according to appropriate illumination conditions corresponding to the fine pattern of the mask 以 for good exposure, and thus the desired line width throughout the entire exposure area. The fine pattern of the mask 准确 is accurately transferred onto the wafer W. Further, in the above-described embodiment, the relay optical system 4 as a collecting optical system that functions as a Fourier transform lens is disposed in the optical path between the spatial light modulation unit SU and the micro φ fly-eye lens 5. However, the present invention is not limited thereto, and an optical system including an afocal optical system, a conical axicon system, a zoom optical system, or the like may be disposed instead of the relay optical system 4. Such an optical system is disclosed in International Publication No. 2005/076045 A1, and in its corresponding US Patent Application Publication No. 2006/0170901A. Further, in the above description, the illuminating aperture is formed by a deformed illumination in which a 2-pole optical polarization 201027266 ^-:M_:pU.d〇C· degree distribution is formed, that is, a 2-pole illumination is taken as an example. The explanation. However, the present invention is not limited to the two-pole illumination, for example, a belt-shaped illumination in which a wheel-shaped aperture intensity distribution is formed, or a multi-pole illumination in which a multi-pole pupil intensity distribution other than a two-pole shape is formed, and the like. The present invention is applied to obtain the same effects. Further, in the above description, the optical integrator of the wavefront division type is described as an example of the micro-folding eye lens 5 in which the lens elements are arranged vertically and horizontally and two-dimensionally. However, the present invention can be applied similarly to the columnar micro fly's eye lens disclosed in, for example, U.S. Patent No. 6,913,373, to obtain the same effects. In addition, when a columnar micro-multi-eye lens is applied, the columnar micro-multi-eye lens has a plurality of cylindrical surface-shaped refractive surfaces (first lenticular lens group) arranged in parallel in the first direction transverse to the optical axis, and Since the plurality of cylindrical surface-shaped refractive surfaces (second lenticular lens groups) are arranged side by side in the second direction orthogonal to the first direction of the optical axis, the first and second lenticular lens groups are used. Define the unit wavefront split plane. Further, in the above embodiment, the micro fly's eye lens 5 is used as the optical integrator. Instead, an inner reflection type optical integrator (typically a rod integrator) may be used. At this time, on the rear side of the relay optical system 4, the condensing lens is arranged such that the front focus position of the relay optical system 4 coincides with the rear focus position of the relay optical system 4, and is positioned at the incident end. The integrating column is disposed in such a manner as to be in the vicinity of the rear focus position of the condensing lens. At this time, the emitting end of the integrating column is located at the reticle 8 . When an integrating column is used, a position in the 201027266 image forming optical system 9 downstream of the integrating column that is optically compared with the position of the aperture stop AS of the projection optical system PL can be referred to as an illumination face. Moreover, the position of the octagonal surface of the integrating column is brought into a virtual image of the secondary light source that illuminates the surface, so that the position and the position that is optically conjugate with the position can be referred to as illumination 曈surface. Here, the position of the rear focus position passing through the relay optical system 4 coincides with the front focus position of the condensing lens, and the surface 5 perpendicular to the optical axis and the unit wave of the micro fly's eye lens 5 are two-dimensionally arranged. The front face is opposite to the face. Therefore, when the 闬 is integrated, the light intensity distribution in the plane passing through the rear focus position of the relay optical system 4 can be controlled according to the above embodiment, and the same effects as those of the above embodiment can be obtained. Further, 'in the above description; as the spatial light modulator 5 having a plurality of optical elements which are two-dimensionally arranged and individually controlled, the orientation (angle: tilt) of the plurality of reflecting surfaces which are two-dimensionally arranged is individually controlled. Space light modulator. However, the present invention is not limited thereto, and for example, a spatial light modulating variator capable of individually controlling the height (position) of a plurality of two-dimensionally arranged reflecting surfaces can be used. As such a spatial light modulator, for example, Japanese Patent Laid-Open No. Hei 6-281869, and the corresponding US Pat. No. 5,312,513, and Japanese Patent Laid-Open No. 2004-5206, No. 8 and the corresponding The spatial light modulator disclosed in Figure Id of U.S. Patent No. 6,885,493. In these spatial light modulators, the incident light can be applied to the same effect as the diffraction surface by forming a two-dimensional height distribution. Further, the above-described spatial light modulator having a plurality of reflecting surfaces arranged in two dimensions may be, for example, Japanese Patent Publication No. 2006-513442 and 201027266, corresponding to US Patent No. 6, S9L655, Japan. The invention is modified by the disclosure of the Japanese Patent Publication No. 2005-0095749, the entire disclosure of which is incorporated herein by reference. Further, in the above description, a reflective spatial light modulator having a plurality of mirror elements is used, but the present invention is not limited thereto. For example, a transmissive spatial light modulation disclosed in U.S. Patent No. 5,229,872 can also be used. Device. Further, in the above embodiment, a variable pattern forming device which forms a predetermined pattern based on predetermined electronic material may be used instead of the photomask. When such a variable pattern forming apparatus is used, even if the pattern surface is vertically disposed, the influence on the synchronization accuracy can be minimized. Further, as the variable pattern forming device 5, for example, a digital micromirror device (DMD) including a plurality of reflective elements driven based on predetermined electronic data can be used. The use of an exposure apparatus having a DMD is disclosed, for example, in the pamphlet of the International Patent Publication No. 2006/080285, the entire disclosure of which is incorporated herein by reference. Further, in addition to a non-light-emitting reflective spatial light modulator such as a DMD, a transmissive spatial light modulator may be used, or a self-luminous image display element may be used. Further, even when the pattern surface is laterally disposed, a variable pattern forming device can be used. Further, in the above embodiment, the pupil intensity distribution in each point on the surface to be irradiated is substantially uniformly adjusted, but the pupil intensity distribution in each point on the surface to be irradiated may be adjusted to be not uniform. Provision for division. And 201027266 _______.!:.00:' and · can also adjust the intensity distribution of the pupils in each point on the illuminated surface to a different standard for different gardens. For example, in order to correct the line width error caused by the uniformity of the intensity distribution of the exposure apparatus itself, and the photolithography process in combination with the exposure apparatus, the coating development processing apparatus (coating development) The line width error caused by the device other than the exposure device such as the heating/cooling treatment device can adjust the pupil intensity distribution at each point on the illuminated surface to a different predetermined distribution. As described below, the photolithography step in the manufacturing process of the semiconductor device is to expose the circuit pattern on the photoresist film after the film forming photoresist (photosensitive phase material) film of the wafer is processed, and further Development processing is performed, whereby a photoresist pattern is formed. The photolithography process is performed by a coating and developing device (coating and developing machine) and an exposure device integrally provided with the device, and the coating and developing device has a photoresist for photoresist coating on the wafer. A coating processing unit or a development processing unit that develops the exposed wafer. Further, such a coating and developing treatment apparatus includes, for example, a heat treatment device or a cooling treatment device that heats a wafer after heat treatment or cooling treatment after forming a photoresist film on a wafer or before development processing. . Here, when the thickness of the photoresist in the wafer is not uniform, or the temperature distribution in the wafer surface is uneven due to the heat treatment, the uniformity of the line width in the irradiation region may be due to the wafer W. The position of the upper illuminated area is different and presents different characteristics. Further, in the etching apparatus in which the photoresist pattern is used as a mask and the film to be etched under the photoresist pattern is etched, when the temperature distribution in the wafer surface is not uniform, the line in the irradiation region may be seen. The uniformity of the decoration is also due to the location of the irradiated area on the wafer "W same as 201027266
二:一儿..d(K 而呈現不同之特性c 如此之甴塗钸顯影處理裝置或飴刻裝置等引毛的、甴 於晶圓上的照射區域的位置使照射區域円的線寬均勻性分 佈的變動,具有於晶圓内不依存於照射位置之一定程変穩 定的誤差分佈(系統性的(systematic )誤差分佈)。因此, 於上述實施形態的曝光裝置中,可藉由將被照射面上的各 點中的光瞳強度分佈分別調整為相互不同的規定分佈,來 修正照射區域内的線寬均勻性分佈之變動。 上述貫施形恶的日泰光装置藉由以保持規定的機械精 ❹ 度、電氣精度、光學精度之方式組裝包含本案申請專利範 圍中所列舉的各構成要素的各種子系統來製造。為了確保 該些各種精度5而於該組裝之前後5對於各種光學系統進 行用以達成光學精度的調整,對於各種機械系統進行用以 達成機械精度的調整,對於各種電氣系統進行用以達成電 氣精度的調整。由各種子系統向曝光裝置的組裝步驟包含 各種子系統相互的機械連接、電性電路的配線連接、氣壓 電路的配管連接等。當然於由該各種子系統向曝光裝置的 ❹ 組裝步驟之前,存在有各子系統各自的組裝步驟。各種子 系統向曝光裝置的組裝步驟結束後,進行綜合調整,確保 作為曝光裝置整體的各種精度。再者,較理想的是1曝光 裝置的製造於溫度以及潔淨度等經管理的無塵室(clean room )中進行。 其次,對於使用有上述實施形態的曝光裝置的元件製 造方法進行說明。圖10是表示半導體元件的製造步驟的流 30 201027266 1 .cioc 程圖〔如圖]〇所示.:车導體元件的製造步騍是將金屬膜蒸 鍍於作為半導體元杜的基板的晶園W上!步驟S40〗·且 在該經蒸鍍的金屬膜上塗佈作為感v光性#料的光阻劑 (photoresist)(步驟S42 )。接著,使用上述實施形態的曝 光裝置,將形成於光罩(標線片)Μ上的圖案轉印至晶圓 W上的各照射區域(步驟S44 :曝光步驟)·並使該轉印結 束後的晶圓W進行顯影、即進行轉印有圖案的光阻劑的顯 影(步驟S46 :顯影步驟)。 ® 然後,將藉由步驟S46而生成於晶圓W表面上的光阻 圖案作為罩幕,對晶圓W的表面進行蝕刻(etching)等加 工(步驟S48 :加工步驟)。此處,所謂光阻圖案是指生成 有形狀與藉甴上述實施形態的曝光裝置而轉印的圖案相對 應之凹凸的光阻劑層,且其凹部貫穿光阻劑層。在步驟S48 中,經由該光阻圖案進行晶圓W的表面加工。步驟S48 中所進行的加工,包含:例如晶圓W表面的I虫刻或金屬膜 等的成膜之中的至少一方。再者,在步驟S44中,上述實 φ 施形態的曝光裝置,將塗佈有光阻劑的晶圓W作為感光性 基板即平板P 5而進行圖案轉印。 圖11是表示液晶顯示元件等液晶元件的製造步驟的 流程圖。如圖Ϊ1所示,液晶元件的製造步驟中,依次進行 圖案形成步驟(步驟S50 )、彩色濾、光片形成步驟(步驟 S52)、單元(cell)組裝步驟(步驟S54)以及模組組裝步 驟(步驟S56)。步驟S50的圖案形成步驟中,於塗佈有光 阻劑作為平板P的玻璃基板上,使用上述實施形態的投影 201027266Two: one..d (K and present different characteristics c) such that the position of the irradiation area on the wafer, such as the development processing device or the engraving device, makes the line width of the irradiation area uniform The variation of the sexual distribution has a stable error distribution (systematic error distribution) that does not depend on the irradiation position in the wafer. Therefore, in the exposure apparatus of the above embodiment, The intensity distribution of the pupils in each point on the irradiation surface is adjusted to be different from each other to correct the variation of the uniformity distribution of the line width in the irradiation area. The above-mentioned Japanese-Taiwan optical device is maintained by the predetermined In terms of mechanical precision, electrical precision, and optical precision, various subsystems including the various components listed in the patent application scope of the present application are assembled and manufactured. To ensure the various precisions 5, before the assembly, 5 for various optical systems. Performing adjustments to achieve optical precision, for various mechanical systems to achieve mechanical precision adjustments, for various electrical systems to achieve electricity Adjustment of gas accuracy. The assembly steps from various subsystems to the exposure apparatus include mechanical connection of various subsystems, wiring connection of electrical circuits, piping connection of pneumatic circuits, etc. Of course, the various subsystems are exposed to the exposure apparatus. Before the assembly step, there are assembly steps for each subsystem. After the assembly steps of the various subsystems to the exposure device are completed, comprehensive adjustment is performed to ensure various precisions as the entire exposure device. Further, it is preferable that the exposure device is one. It is produced in a managed clean room such as temperature and cleanliness. Next, a method of manufacturing an element using the exposure apparatus of the above embodiment will be described. Fig. 10 is a flow 30 showing a manufacturing step of a semiconductor element. 201027266 1 .cioc diagram [as shown in the figure] :: The manufacturing step of the vehicle conductor element is to deposit a metal film on the crystal garden W as a substrate of the semiconductor element Du; step S40 · and in the steaming A photoresist as a v-viscosity material is applied onto the plated metal film (step S42). Next, the exposure of the above embodiment is used. The device transfers the pattern formed on the mask (the reticle) to each of the irradiation regions on the wafer W (step S44: exposure step), and develops the wafer W after the transfer is completed, that is, Development of the patterned photoresist is performed (step S46: development step). Then, the photoresist pattern formed on the surface of the wafer W by the step S46 is used as a mask to perform the surface of the wafer W. Processing such as etching (step S48: processing step). Here, the photoresist pattern means a photoresist layer having irregularities having a shape corresponding to the pattern transferred by the exposure apparatus of the above embodiment. The concave portion penetrates the photoresist layer, and in step S48, the surface of the wafer W is processed through the photoresist pattern. The processing performed in step S48 includes, for example, at least one of film formation such as I-insert or metal film on the surface of the wafer W. In the exposure apparatus of the above-described embodiment, the wafer W coated with the photoresist is patterned as a photosensitive substrate, i.e., the flat plate P5. Fig. 11 is a flow chart showing a manufacturing procedure of a liquid crystal element such as a liquid crystal display element. As shown in FIG. 1, in the manufacturing process of the liquid crystal element, a pattern forming step (step S50), a color filter, a light sheet forming step (step S52), a cell assembly step (step S54), and a module assembling step are sequentially performed. (Step S56). In the pattern forming step of step S50, the projection of the above embodiment is used on the glass substrate coated with the photoresist as the flat plate P 201027266
^ . i _ 1 /i - .〇ί K 曝光裝置來形成電路圖案以及電極圓案等規定圖案。該圖 案形成步、驟包含:曝光步驟·使尾上述實施形態的投影曝 光裝置·將圖案轉印至光阻劑層;顯影步驟·’進行轉印有 圖案的平板Ρ的顯景彡、即玻稱基板上的光卩且劑層的藏京 而生成與圖案相對應形狀的光阻劑層;以及加工步驟;經 由該經顯影的光阻劑層,對玻璃基板的表面進行加工。 步驟S52的彩色滤光片形成步驟中,形成如下彩色溏 光片:該彩色濾光片矩陣狀排列有多個與故色(:P、ed, R )、 綠色(Green,G )、藍色(B lue, B )相對應的3個點組,或 者沿水平掃描方向排列有多個R、G、B的3條條狀的濾 光片組。步驟S54的單元組裝步驟中,使用藉由步驟S50 而形成有規定圖案的玻璃基板及藉由步驟S52而形成的彩 色濾光片,來組裝液晶面板(液晶單元)。具體而言,例如 藉由將液晶注入至玻璃基板與彩色濾光片之間而形成液晶 面板。步驟S56的模組組裝步驟中,對由步驟S54所組裝 的液晶面板,安裝使該液晶面板進行顯示動作的電氣電路 以及背光模組等各種零件。 而且,本發明並非限定為適用於半導體元件製造用曝 光裝置,例如,亦可廣泛適用於用以製造形成於方形玻稱 板上的液晶顯示元件、或電漿顯示器等顯示器裝置用的曝 光裝置,或攝像元件(CCD等)、微型機械、薄膜磁頭、 以及去氧核糖核酸(Deoxyribonucleic acid, DNA)晶片等 各種元件的曝光裝置。進而,本發明亦可適用於使用光微 影步驟,製造各種元件之形成有光罩圖案的光罩 201027266 ijpii.doc (phoiomask、標線片等)時的曝光步驟(曝光裝置)ε 再者·在上述實絶形態中.使甩ArF車分子雷射光「波 長:193nm)或KrF準分子雷射光(波長:24gnm:)作為 曝光光線,但並非限定於此,亦可將本發明適用於其他適 當的雷射光源、例如供給波長為157 nm的雷射光的?2雷 射光源等。 而且,於上述實施形態中,亦可適罔將具有大於1.1 的折射率的介質(典型性的是液體)填充至投影光學系統 ® 與感光性基板之間的光路中的方法,即所謂的液浸法。此 時,作為將液體填充至投影光學系統與感光性基板之間的 光路中的方法,可採用國際公開第WO99/49504號小冊子 中所揭示的局部性填充液體的方法、或日本專利特開平6 一〗2 4 8 73號公報中所揭示的使保持著曝光對象基板的載 物台移動於液槽中的方法、或日本專利特開平10 —303114 號公報中所揭示的於載物台上形成規定深度的液體槽,並 在該液體槽中保持基板的方法等。而且,於上述實施形態 φ 中,亦可適用美國公開公報第2006/0Π0901號以及第 2007/0146676號中所揭示的所謂偏光照明方法。 另外,上述實施形態是將本發明適用於在曝光裝置中 對光罩(或晶圓)進行照明的照明光學系統,但並非限定 於此,亦可將本發明適用對光罩(或晶圓)以外的被照射 面進行照明的普通照明光學系統。 雖然本發明已以實施例揭露如上,然其並非用以限定 本發明,任何所屬技術領域中具有通常知識者,在不脫離 201027266 ] _ipu.doc· 本發明之賴 .w和範圍円·當可作些許之更動與潤飾,故本 發明之保護範圍當視後除之έ請專利範圍所界定者為座c [圖式簡單說明】 圖]是概略性表示本發明實施形態的曝光裝置的構成 的圖c 圖2是對空間光調變單元中的空間光調變器的作用進 行說明的圖。 圖3是空間光調變器的主要部分的局部立體圖。 圖4是示意性表示形成於照明光瞳中的2極狀的光強 度分倚的圖。 圖5是概略性表示微複眼透鏡的入射面構成以及對應 著圖4的光瞳強度分佈使光入射的單位波前分割面的圖。 圖6是對本實施形態的作用進行說明的第1圖。 圖7是表示圖6的各點PI、P2、P3的相關光瞳強度 分佈的圖。 圖8是對本實施形態的作用進行說明的第2圖。 圖9是表示圖8的各點P] ' P2 ' P3的相關光瞳強度 分佈的圖。 圖10是衣不半導體元件的製造步驟的流程圖c 圖η是表示液晶顯示元件等液晶元件的製造步驟的 流程圖。 [主要元件符號說明】 1 :光束傳輸部 2:導光構件 201027266^ . i _ 1 /i - .〇ί K Exposure device to form a prescribed pattern such as a circuit pattern and an electrode round. The pattern forming step includes: an exposure step, a projection exposure apparatus of the above embodiment, a pattern transfer to a photoresist layer, and a development step of 'displaying a pattern of a flat sheet on which a pattern is transferred, that is, glass A photoresist layer on the substrate is formed and a photoresist layer is formed in a pattern corresponding to the pattern; and a processing step is performed; the surface of the glass substrate is processed through the developed photoresist layer. In the color filter forming step of step S52, a color light-emitting sheet is formed in which a plurality of colors (: P, ed, R), green (Green, G), and blue are arranged in a matrix. (B lue, B ) The corresponding three dot groups, or three strips of filter sets of R, G, and B arranged in the horizontal scanning direction. In the unit assembling step of step S54, a liquid crystal panel (liquid crystal cell) is assembled by using a glass substrate having a predetermined pattern formed in step S50 and a color filter formed in step S52. Specifically, for example, a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter. In the module assembly step of step S56, various components such as an electric circuit and a backlight module for performing display operation on the liquid crystal panel are mounted on the liquid crystal panel assembled in step S54. Further, the present invention is not limited to being applied to an exposure apparatus for manufacturing a semiconductor element, and can be widely applied, for example, to an exposure apparatus for manufacturing a liquid crystal display element formed on a square glass plate or a display device such as a plasma display. Or an exposure device of various elements such as an imaging element (CCD or the like), a micromachine, a thin film magnetic head, and a deoxyribonucleic acid (DNA) wafer. Further, the present invention is also applicable to an exposure step (exposure device) in the case where a mask of a mask having a mask pattern of 201027266 ijpii.doc (phoiomask, reticle, etc.) is formed by using a photolithography step. In the above-described actual form, the 甩ArF vehicle laser light "wavelength: 193 nm" or KrF excimer laser light (wavelength: 24 gnm:) is used as the exposure light, but the invention is not limited thereto, and the present invention can be applied to other appropriate a laser light source, for example, a laser light source that supplies laser light having a wavelength of 157 nm, etc. Further, in the above embodiment, a medium having a refractive index greater than 1.1 (typically a liquid) may be suitable. A method of filling into an optical path between the projection optical system® and the photosensitive substrate, that is, a so-called liquid immersion method. At this time, as a method of filling a liquid into an optical path between the projection optical system and the photosensitive substrate, a method may be employed. The method of partially filling a liquid disclosed in the pamphlet of WO99/49504, or the substrate to be exposed as disclosed in Japanese Laid-Open Patent Publication No. Hei. A method of moving a stage in a liquid tank, or a method of forming a liquid tank having a predetermined depth on a stage as disclosed in Japanese Laid-Open Patent Publication No. Hei 10-303114, and holding the substrate in the liquid tank. The above-described embodiment φ can also be applied to a so-called polarized illumination method disclosed in U.S. Patent Publication Nos. 2006/00901 and 2007/0146676. Further, the above embodiment is applicable to the present invention in an exposure apparatus. The illumination optical system that illuminates the mask (or wafer) is not limited thereto, and the present invention can also be applied to a general illumination optical system that illuminates an illuminated surface other than a photomask (or wafer). The above has been disclosed in the above embodiments, but it is not intended to limit the present invention, and any one of ordinary skill in the art, without departing from 201027266] _ipu.doc· The invention and the scope of the invention 当· Change and refinement, so the scope of protection of the present invention is defined as the scope of the patent, and the definition of the scope of the patent is c. [Simple diagram of the drawing] Fig. is a schematic representation of the present invention. Fig. 2 is a view for explaining the operation of the spatial light modulator in the spatial light modulation unit. Fig. 3 is a partial perspective view of a main portion of the spatial light modulator. Fig. 5 is a view schematically showing a configuration of an entrance surface of a micro fly's eye lens and a unit wave corresponding to the pupil intensity distribution of Fig. 4; Fig. 6 is a first view for explaining the operation of the present embodiment. Fig. 7 is a view showing the correlation pupil intensity distribution of points PI, P2, and P3 of Fig. 6. Fig. 8 is a view showing the present embodiment. The role of Figure 2 is illustrated. Fig. 9 is a view showing the correlation pupil intensity distribution at each point P] 'P2 ' P3 of Fig. 8; Fig. 10 is a flow chart showing a manufacturing step of a semiconductor element. Fig. 11 is a flow chart showing a manufacturing procedure of a liquid crystal element such as a liquid crystal display element. [Description of main component symbols] 1 : Beam transmission section 2: Light guiding member 201027266
j一、—.CIOC 2ε :第]反射面 2b :第2反射面 3:空間光調變器 · i 3 .本體 3b :驅動部 4:中繼光學系統 5:微複眼透鏡 5a:入身十面 β 5b ' 5ba、5bb :微透鏡 6:孔徑光闌 7 :聚光光學糸統 8:光罩遮器 9 :成像光學系統 ]〇 :照度分佈測量部· Π:光曈強度分佈測量部 20 : 2極狀光瞳強度分佈 ❹ 20a、20b :面光源 2卜22、23 :光瞳強度分佈 21a、21b、22a、22b、23a、23b :面光源 AS :孔徑光闌 ΑΧ :光軸 L1〜L4 :光線 LS :光源 SP1〜SP4 :光強度分佈 201027266 32512nn.doc SU :空間光調變罩元 CR :控制部 Μ :光覃 P :平板 PL :投影光學系統 P1 :中心點 P2、P3 :周邊點 SE ' SEa〜SEd :反射鏡要素 S40〜S56 :步驟 ❹ "W .晶圓 WS :晶圓載物台 ❿ 36J1, -.CIOC 2ε : the first reflecting surface 2b: the second reflecting surface 3: the spatial light modulator · i 3 . The body 3b : the driving portion 4 : the relay optical system 5 : the micro fly's eye lens 5a: the ten Surface β 5b ' 5ba, 5bb : microlens 6 : aperture stop 7 : concentrating optical system 8 : reticle 9 : imaging optical system 〇 : illuminance distribution measuring unit · Π: pupil intensity distribution measuring unit 20 : 2 pole-shaped pupil intensity distribution ❹ 20a, 20b: surface light source 2 22, 23: pupil intensity distribution 21a, 21b, 22a, 22b, 23a, 23b: surface light source AS: aperture stop: optical axis L1~ L4: Light LS: Light source SP1 to SP4: Light intensity distribution 201027266 32512nn.doc SU: Space light modulation cover element CR: Control unit Μ: Optical aperture P: Flat panel PL: Projection optical system P1: Center point P2, P3: Peripheral Point SE 'SEa~SEd: Mirror element S40~S56: Step ❹ "W. Wafer WS: Wafer Stage ❿ 36
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| TWI661224B (en) * | 2011-06-13 | 2019-06-01 | 日商尼康股份有限公司 | Illumination optical system, exposure apparatus and device manufacturing method |
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| CN102163006A (en) * | 2011-04-19 | 2011-08-24 | 南昌航空大学 | Fully automatic stepping digital lithography device |
| JP5868492B2 (en) | 2011-05-06 | 2016-02-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Illumination system of microlithographic projection exposure apparatus |
| JP6643466B2 (en) * | 2015-09-23 | 2020-02-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Method of operating a microlithographic projection apparatus and an illumination system for such an apparatus |
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| JPH113849A (en) * | 1997-06-12 | 1999-01-06 | Sony Corp | Variable deformation illumination filter and semiconductor exposure apparatus |
| JP2002353105A (en) * | 2001-05-24 | 2002-12-06 | Nikon Corp | Illumination optical device, exposure apparatus having the illumination optical device, and method for manufacturing microdevice |
| KR100576746B1 (en) * | 2001-06-01 | 2006-05-03 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product |
| EP1668421A2 (en) * | 2003-09-12 | 2006-06-14 | Carl Zeiss SMT AG | Illumination system for a microlithography projection exposure installation |
| US7525642B2 (en) * | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8937706B2 (en) * | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
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