201015248 九、發明說明： 【發明所屬之技術領域】 本發明係關於移除或剝離光阻劑材料之方法及設備以及 自一工件表面移除相關殘餘物。特定而言，此申請案係關 於用於在離子植入或電漿輔助摻雜植入（低劑量或高劑量 植入之光阻劑）之後剝離光阻劑之方法及設備。 【先前技術】 光阻劑係一種光敏材料，其用於某些製造製程中以在處 • 理期間在一工件（例如一半導體晶圓）上形成經圖案化塗 層。在將塗佈有光阻劑之表面曝露於高能輻射圖案之後， 移除一部分光阻劑以顯露出下面之表面，而該表面之剩餘 部分仍受到保護。對未被覆蓋之表面及剩餘之光阻劑執行 諸如蝕刻、沈積及離子植入等半導體製程。在執行一或多 個半導體製程之後，在一剝離作業中將剩餘之光阻劑移 除。 在離子植入期間，使摻雜劑離子（例如，硼、二氟化 ❿ 硼、銦、鎵、鉈、磷、砷、銻、鉍或鍺等離子）朝向一工 件靶標加速。該等離子植入在該工件之曝露區以及剩餘之 光阻劑表面中。該製程可形成阱區（源極/汲極）及輕摻雜汲 極（LDD)及雙擴散汲極（DDD)區。該離子植入用植入物質 次潰光阻劑並耗盡表面上之氫。光阻劑外層或硬殼形成可 比下伏體光阻劑層厚許多之碳化層。此兩個層具有不同之 熱膨脹率且以不同之速率對剝離製程作出反應。 在後高劑量離子植入光阻劑中，外部層與體層之間的不 136265.doc 201015248 同相當明顯。在高劑量植入中，離子劑量可大於ΐχΐ〇15離 子/平方釐米，且能量可為自10千電子伏至大於1〇〇千電子 伏。傳統之高劑量植入剝離（HDIS)製程採用氧化學物其 中遠離處理室形成單原子氧電漿且然後將其引導至工件表 面處。反應性氧與光阻劑組合以形成氣態副產物，該副產 物用真空幫浦來移除。對於HDIS，需要額外之氣體來 移除含氧之已植入摻雜劑。 主要之HDIS考量因素包含剝離速率、殘餘物量及所曝 ❿ 露及下伏薄臈層之薄膜損失。HDIS及剝離之後通常會在 基板表面上發現殘餘物。該等殘餘物可因高能植入期間之 濺射、硬殼之不完全移除及/或光阻劑中植入原子之氧化 而產生在剝離之後，該表面上應沒有殘餘物或大致沒有 殘餘物，以確保高產量且不再需要額外之殘餘物移除處 理。可藉由過度剝離來移除殘餘物，亦即，在超過移除全 部光阻劑所需標稱點之後繼續進行該剥離製程。遺憾地， • 在習用HDIS作業中，過度剝離有時亦會移除某些下伏功 能裝置結構。在裝置層處，即使自晶體管源極/汲極區之 極少矽損失亦會對裝置性能及產量（尤其對以<32奈米或其 以下之設計規則而製造之超淺結裝置）產生不利影響。 因此，需要改進用於剝離光阻劑及與離子植入相關之殘 餘物之方法及設備（對於HDIS尤其如此），從而可在維持可 接受之剝離速率之同時使矽損失最小化且留下極少或不留 下殘餘物。 【發明内容】 I36265.doc 201015248 本發明藉由提供用於自—工件表面剝離光阻劑並移除與 離子植入相關之殘餘物之經改進方法及設備來解決前述需 要。使用7G素氫、一弱氧化劑及一含氟氣體產生電漿。在 某些實施财，將一情性氣體引入至處於電漿源下游及— 喷淋頭上游之電漿，從而引導氣體進入反應室中。與該惰 性氣體一起流動之由電漿活化之氣體與高劑量植入光阻劑 反應，從而將硬殼層及體光阻劑層兩者移除，且以低矽損 失使工件表面大致沒有殘餘物。 在本發明一個態樣中，其方法涉及根據以下作業在一處 理室中自一工件移除材料：向一電漿源中引入一包括元素 氫之氣體、一弱氡化劑及一含氟氣體；自引入至該電漿源 中之該氣體產生一電漿；及在該電漿源下游及該工件上游 引入一惰性氣體。該由電漿活化之氣體朝向一工件行進， 且與反應室中之一喷淋頭上游之惰性氣體組合。該電漿中 之帶電物質可在其接觸該喷淋頭時放電或部分放電。 包括元素氫、該弱氧化劑及該含氟氣體之由電漿活化之 氣體與惰性氣體一起流動至工件並與來自該工件之材料反 應。弱氧化劑之實例包含二氧化碳、一氧化碳、二氧化 氮、氧化氮、水、過氧化氫或該等氣體之組合，該弱氧化 劑較佳地為二氧化碳。該含氟氣體可係四氟化碳、包含氫 氣碳化合物之其他碳氟化合物、元素氟、三氟化氮、六氟 化硫、該等氣體之組合等等。該含氟氣體較佳地為四氟化 碳。該惰性氣體可係氬、氦、氮、該等氣體之組合等等。 較佳惰性氣體為氬。引入至該電漿源中之氣體可預先混合 136265.doc 201015248 或不預先混合’且可包含體積約為跑99%或約㈣至約 。。或約3%至5%之弱氧化齊卜該惰性氣體可以元素氫之 ;,,速之約0.15倍及1〇倍或約2倍之體積流速引入。在 曾>5 2該氣體可包含體積至多約伯1%之弱氧化劑物 質及體積約佔〇.1%至〇5%之含氟氣體物質。 在某-實施例中’自該卫件表面移除之材料係，高劑量植 入光阻劑。該工件可传本上 仵了係300毫未之晶圓。可使用約3〇〇瓦 、約千瓦之間的RF功率遠程地產生電聚。該工件在接觸 到氣體時溫度可為約16〇至 攝氏度。處理壓力可在約 3〇〇毫托與2毫托之間。 根據各種實施例，以一至少約1〇〇奈米"分鐘之速率自工 :表面移除一高劑量植入光阻劑，且以-不大於約4奈求/ 分鐘之總速率自工件表面移除 移除後所得工件大致沒 ^南劑量植入光阻劑，且約有小於3埃之石夕自一下伏石夕層 損失掉。 φ 本發明另一態樣係關於在一反應 古森丨县4* 馬至中自—工件表面移除 =植入之光阻劑之多步驟方法。該等方法包含藉由以 下步驟移除該材料之第一部分：以— 弟一總流速向一電漿 Π入-包括元素氮、一弱氧化劑(且含氣氣體可有可 ，之第-氣體；自引入至該電聚源中之該第一氣體產生 一第一電衆；在該電漿源下游及該工件上㈣入一第一惰 性氣體；及使來自該工件之該材料 — 4, ^ ^ 弟—部分與該混合 物發生反應《該等方法還包含藉由以下 一第二部分：以一第二總流速向一 除該材料之 ^聚綠中引入一包括氫 136265.doc •9· 201015248201015248 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method and apparatus for removing or stripping a photoresist material and for removing relevant residues from a workpiece surface. In particular, this application relates to methods and apparatus for stripping photoresist after ion implantation or plasma assisted doping (low dose or high dose implanted photoresist). [Prior Art] A photoresist is a photosensitive material that is used in certain manufacturing processes to form a patterned coating on a workpiece (e.g., a semiconductor wafer) during processing. After exposing the surface coated with the photoresist to the high energy radiation pattern, a portion of the photoresist is removed to reveal the underlying surface while the remainder of the surface is still protected. Semiconductor processes such as etching, deposition, and ion implantation are performed on the uncovered surface and the remaining photoresist. After performing one or more semiconductor processes, the remaining photoresist is removed in a stripping operation. During ion implantation, dopant ions (e.g., boron, boron bismuth difluoride, indium, gallium, antimony, phosphorus, arsenic, antimony, antimony, or antimony) are accelerated toward a workpiece target. The plasma is implanted in the exposed area of the workpiece and in the remaining photoresist surface. The process forms well regions (source/drain) and lightly doped yttrium (LDD) and double diffused drain (DDD) regions. The ion implantation implant material sub-kills the photoresist and depletes the hydrogen on the surface. The outer or hard shell of the photoresist forms a carbonized layer that is much thicker than the underlying photoresist layer. The two layers have different rates of thermal expansion and react to the stripping process at different rates. In the post-high dose ion implantation photoresist, the difference between the outer layer and the bulk layer is quite obvious. In high dose implants, the ion dose can be greater than ΐχΐ〇15 ions/cm 2 and the energy can range from 10 keV to greater than 1 〇〇 volts. Conventional high dose implant stripping (HDIS) processes employ an oxidizing species in which a single atomic oxygen plasma is formed away from the processing chamber and then directed to the surface of the workpiece. The reactive oxygen is combined with a photoresist to form a gaseous by-product which is removed by a vacuum pump. For HDIS, an additional gas is required to remove the oxygenated implanted dopant. The main factors in the HDIS considerations include the rate of stripping, the amount of residue, and the film loss of the exposed and underlying thin layer. Residues are usually found on the surface of the substrate after HDIS and peeling. The residue may be generated by sputtering during high energy implantation, incomplete removal of the hard shell, and/or oxidation of the implanted atoms in the photoresist after stripping, which should have no residue or substantially no residue on the surface. To ensure high yields and no additional residue removal treatment is required. The residue can be removed by excessive stripping, i.e., the stripping process is continued after the nominal point required to remove all of the photoresist is removed. Unfortunately, • In conventional HDIS operations, excessive stripping sometimes removes some underlying functional device structures. At the device level, even a very small loss from the source/drain regions of the transistor can be detrimental to device performance and throughput (especially for ultra-shallow devices manufactured with <32 nm or less). influences. Accordingly, there is a need for improved methods and apparatus for stripping photoresists and residues associated with ion implantation (especially for HDIS) to minimize enthalpy losses while maintaining an acceptable strip rate and leaving minimal Or leave no residue. SUMMARY OF THE INVENTION I36265.doc 201015248 The present invention addresses the foregoing needs by providing improved methods and apparatus for stripping photoresist from the surface of a workpiece and removing residues associated with ion implantation. A plasma is produced using 7G hydrogen, a weak oxidant, and a fluorine-containing gas. In some implementations, an inert gas is introduced into the plasma downstream of the plasma source and upstream of the showerhead to direct gas into the reaction chamber. The plasma-activated gas flowing with the inert gas reacts with the high-dose implanted photoresist to remove both the hard shell layer and the bulk photoresist layer, and the workpiece surface has substantially no residue with low enthalpy loss. Things. In one aspect of the invention, the method involves removing material from a workpiece in a processing chamber by introducing a gas comprising elemental hydrogen, a weakening agent, and a fluorine-containing gas into a plasma source. The gas generated from the plasma source produces a plasma; and an inert gas is introduced downstream of the plasma source and upstream of the workpiece. The plasma activated gas travels toward a workpiece and is combined with an inert gas upstream of one of the showerheads in the reaction chamber. The charged species in the plasma can be discharged or partially discharged as it contacts the showerhead. A plasma-activated gas including elemental hydrogen, the weak oxidant, and the fluorine-containing gas flows together with the inert gas to the workpiece and reacts with the material from the workpiece. Examples of weak oxidizing agents include carbon dioxide, carbon monoxide, nitrogen dioxide, nitrogen oxides, water, hydrogen peroxide or a combination of such gases, preferably a weak oxidizing agent. The fluorine-containing gas may be carbon tetrafluoride, other fluorocarbons including hydrogen carbon compounds, elemental fluorine, nitrogen trifluoride, sulfur hexafluoride, a combination of such gases, and the like. The fluorine-containing gas is preferably carbon tetrafluoride. The inert gas may be argon, helium, nitrogen, a combination of such gases, and the like. Preferably, the inert gas is argon. The gas introduced into the plasma source may be premixed 136265.doc 201015248 or may not be pre-mixed' and may comprise a volume of about 99% or about (four) to about. . Or a weak oxidizing of about 3% to 5%. The inert gas may be introduced at a flow rate of about 0.15 times and about 1 time or about 2 times the volume of elemental hydrogen. The gas may have a weak oxidant substance having a volume of at most about 1% and a fluorine-containing gas substance having a volume of about 1% to about 5%. In a certain embodiment, the material removed from the surface of the guard is a high dose implanted with a photoresist. The workpiece can be transferred to a wafer of 300 millimeters. Electropolymerization can be generated remotely using RF power of between about 3 watts and about kilowatts. The workpiece may be at a temperature of about 16 Torr to Celsius when exposed to a gas. The treatment pressure can be between about 3 Torr and 2 mTorr. According to various embodiments, self-working at a rate of at least about 1 nanometer" minute: removing a high dose implanted photoresist from the surface and at a total rate of - no more than about 4 nanometers per minute from the workpiece After the surface removal and removal, the obtained workpiece is substantially not implanted with a photoresist in the south dose, and approximately less than 3 angstroms of stone is lost from the underlying layer. φ Another aspect of the invention relates to a multi-step process for removing the implanted photoresist in a reaction from the surface of the workpiece in the 4* horse to the Gussen County. The method comprises removing the first portion of the material by: injecting a plasma into a plasma at a total flow rate - including elemental nitrogen, a weak oxidant (and a gas containing gas, a first gas); The first gas introduced into the electropolymer source generates a first electricity source; a first inert gas is introduced into the workpiece downstream of the plasma source and (4); and the material from the workpiece is used - 4, ^ ^ 弟 - Partially reacts with the mixture. The methods further comprise introducing a hydrogen comprising 136265.doc •9· 201015248 by a second total flow rate to a green layer of the material.
❹ 與一弱氧化劑（且含氟氣體可有可無）之第二氣體；自弓丨入 至該電漿源中之該第二氣體產生一第二電漿；在該電漿： 下游及該工件上游引入一第二惰性氣體；及使來自該工件 之該材料之-第二部分發生反應。該第—與第二氣體組成 係不同。在某些實施例中，該第一或該第二氣體中之至少 一者包含一含氟氣體。在某些實施例中，工件在移除製程 結束時大致沒有殘餘物且已有約小於3埃之矽自一下伏矽 層損失掉。該移除一第二部分之作業可在移除該第一部分 之作業之前發生。在某些實施例中，將該等移除作業中之 一者或多者重複一次或多次。該等移除作業可在反應室t 之同一或不同反應站中發生。 在又一態樣中，本發明係關於一種用於自一工件表面移 除材料之設備，該設備包括一反應室及一控制器。該反應 室包含：一電漿源；一用於向該電漿源中引入一包括元素 氫之氣體I合物之氣艘人口；—用於在該電衆源下游及該 工件上游引入一惰性氣體之氣體入口；一定位於該氣體入 口下游之噴淋頭；及一位於該喷淋頭下游之工件支撐件。 該工件支撐件包含一底座及用來控制支樓於該工件支撐件 上之工件之溫度的溫度控制機構。該控制器經構形以執 订一指令集，其包含執行以下作業之指令：向一電漿源中 引入一包括氣、一弱氧化劑及一含氟氣體之氣體；自引入 至該電漿源中之該氣體產生_電聚；在該電衆源下游及該 工件上游引入一惰性氣體；及視情況使用不同流速及氣體 組成重複該等？丨入一氣體、產生一電漿及引入一惰性氣體 136265.doc 201015248 之才曰令。根據本發明方法及設備所使用之電漿源可係若干 種習用電漿源中之任一種。例如，可使用一 RF ICp源。 根據本發明方法及設備所使用之處理室可係任何適當之 處理至。該處理室可係一多室設備中之一個室或者其可 係單至设備之一部分。在某些實施例中，該反應室包含 i數個站’其中至少—個站包含-電漿源、複數個氣體入 口、一喷淋頭及一工件支撐件。 下文將參照附圖更詳細闡述本發明之該等及其他特徵及 • 優點。 【實施方式】 簡介 在以下對本發明之詳細說明中，閣述了衆多具體實施例 以提供對本發明之透徹理解。然而，熟悉此項技術者應明 瞭，可不以該等具體細節或藉由使用替代元件或製程來實 踐本發I在其他實例中，並未詳細地闞述衆所周知之製 程、程序及組件，以免不必要地模糊本發明各態樣。 在此申請案中，術語"工件，，、，，半導體晶圓"、"晶圓，， 及”部分製造之積體電路"將互換地使用。熟悉此項技術者 將瞭解，術語"部分製造之積體電路"可係指代在其上之積 體電路製造中諸多階段中之任—階段期間之妙晶圓。以下 詳細說明假定本發明實施於一晶圓上。然而，本發明並不 限於此。該工件T呈各種形狀、大+，且可由各種材料製 成。除半導體晶圓夕卜，可利用本發明之其他工件包含諸如 顯示器、印刷電路板等各種物件。 136265.doc 201015248 如先前所提及，本發明之方法及設備可用於在高劑量離 子植入後有效且高效地移除光阻劑材料。本發明並不限於 高劑量植入剝離（HDIS)。本發明亦不限於所植入之任何特 定種類之摻雜劑。例如，所闌述之方法及設備可高效地與 中等或低劑量植入之後之剝離一起使用。雖然已論述諸如 硼、砷及磷等具體摻雜劑離子，但所闞述之方法及設備可 高效地用於剝離以諸如氮、氧、碳、鍺及鋁等其他摻雜劑 浸潰之光阻劑。 在2007年2月27日提出申請之名稱為"使用下游氣體混合 之增強型低 K 薄膜剝離（Enhanced Stripping of Lcm-K Films Using Downstream Gas Mixing)·'之美國專利申請案第 1 1/712,253號及在2004年12月13日提出申請且名稱為"使用 下游氣體混合之增強型低K薄膜剝離（Enhanced Stripping of Low-K Films Using Downstream Gas Mixing)"作為美國 專利第7,202，176號而發佈之美國專利申請案第11/〇11273 號中論述及揭示用於光阻劑剝離之各種方法及設備，該等 申請案之整體揭示内容出於各種目的以引用方式併入本文 中。 本發明方法及設備使用產生自含氫氣體之電漿。該等氣 體還含有一弱氧化劑及一含氟氣體。熟悉此項技術者將認 識到，實際存在於電漿中之物質可係衍生自氫、弱氧化劑 及含氟氣體之不同離子、自由基及分子之混合物。應注 意’反應室中還可存在其他物質，例如，小碳氫化合物、 二氧化碳、水蒸氣及電漿與其反應並分解有機光阻劑及其 136265.doc 201015248 他殘餘物之其他揮發性組份。熟悉此項技術者還將認識 到，引入至電漿中之一初始氣體或多初始氣體通常與電漿 中存在之一氣體或多氣體以及在剝離期間接觸工件表面之 一氣體或多氣體不同》a second gas with a weak oxidant (and a fluorine-containing gas may or may not be present); the second gas from the bow into the plasma source produces a second plasma; in the plasma: downstream and Introducing a second inert gas upstream of the workpiece; and reacting a second portion of the material from the workpiece. The first-to-second gas composition is different. In certain embodiments, at least one of the first or second gases comprises a fluorine-containing gas. In some embodiments, the workpiece has substantially no residue at the end of the removal process and has been lost from the underlying layer of ruthenium less than about 3 angstroms. The removal of a second portion of the job can occur prior to the removal of the first portion of the job. In some embodiments, one or more of the removal operations are repeated one or more times. These removal operations can occur in the same or different reaction stations of reaction chamber t. In still another aspect, the invention is directed to an apparatus for removing material from a surface of a workpiece, the apparatus including a reaction chamber and a controller. The reaction chamber comprises: a plasma source; a gas population for introducing a gas I compound comprising elemental hydrogen into the plasma source; - for introducing an inert gas downstream of the electricity source and upstream of the workpiece a gas inlet for the gas; a showerhead located downstream of the gas inlet; and a workpiece support located downstream of the showerhead. The workpiece support includes a base and a temperature control mechanism for controlling the temperature of the workpiece on the workpiece support. The controller is configured to define an instruction set including instructions for: introducing a gas comprising a gas, a weak oxidant, and a fluorine-containing gas into a plasma source; self-introduction to the plasma source The gas in the process produces _electropolymerization; introducing an inert gas downstream of the source and upstream of the workpiece; and repeating the flow rate and gas composition as appropriate using different conditions? Incorporating a gas, generating a plasma and introducing an inert gas 136265.doc 201015248. The plasma source used in accordance with the method and apparatus of the present invention can be any of a number of conventional plasma sources. For example, an RF ICp source can be used. The processing chambers used in accordance with the methods and apparatus of the present invention can be suitably processed. The processing chamber can be one of a multi-chamber device or it can be tied to one of the devices. In some embodiments, the reaction chamber includes a plurality of stations 'at least one of which includes a plasma source, a plurality of gas inlets, a showerhead, and a workpiece support. These and other features and advantages of the present invention are described in more detail below with reference to the drawings. DETAILED DESCRIPTION OF THE INVENTION In the following detailed description of the invention, numerous embodiments are set forth However, it will be apparent to those skilled in the art that the present invention may be practiced without the specific details or by the use of alternative components or processes. In other instances, well-known processes, procedures, and components are not described in detail to avoid It is necessary to obscure the various aspects of the invention. In this application, the terms "workpiece,,,,, semiconductor wafer", "wafer, and "partially manufactured integrated circuit" will be used interchangeably. Those skilled in the art will appreciate that The term "partially fabricated integrated circuit" may refer to any of the many stages in the fabrication of integrated circuits thereon. The following detailed description assumes that the present invention is implemented on a wafer. However, the present invention is not limited thereto. The workpiece T is in various shapes, large +, and can be made of various materials. In addition to the semiconductor wafer, other workpieces that can be utilized in the present invention include various objects such as a display, a printed circuit board, and the like. 136265.doc 201015248 As mentioned previously, the method and apparatus of the present invention can be used to effectively and efficiently remove photoresist materials after high dose ion implantation. The invention is not limited to high dose implant stripping (HDIS). The invention is also not limited to any particular type of dopant implanted. For example, the methods and apparatus described herein can be used efficiently with stripping after medium or low dose implantation. Specific dopant ions such as boron, arsenic, and phosphorus are described, but the methods and apparatus described herein can be efficiently used to strip photoresists that are impregnated with other dopants such as nitrogen, oxygen, carbon, germanium, and aluminum. U.S. Patent Application Serial No. 1 1/712,253, entitled "Enhanced Stripping of Lcm-K Films Using Downstream Gas Mixing", issued on February 27, 2007, "Enhanced Stripping of Lcm-K Films Using Downstream Gas Mixing. And on December 13, 2004, the application is "Enhanced Stripping of Low-K Films Using Downstream Gas Mixing" as US Patent No. 7,202,176 Various methods and apparatus for photoresist stripping are discussed and disclosed in U.S. Patent Application Serial No. 11/11, the entire disclosure of each of which is hereby incorporated herein in The method and apparatus use a plasma generated from a hydrogen-containing gas. The gases also contain a weak oxidant and a fluorine-containing gas. Those skilled in the art will recognize that it is actually present in the plasma. The substance may be derived from a mixture of different ions, radicals and molecules of hydrogen, weak oxidant and fluorine-containing gas. It should be noted that 'other substances may also be present in the reaction chamber, for example, small hydrocarbons, carbon dioxide, water vapor and electricity. The slurry reacts with it and decomposes the organic photoresist and its other volatile components of its residue. Those skilled in the art will also recognize that one of the initial gases or multiple initial gases introduced into the plasma is usually associated with One gas or multiple gases in the plasma and different gases or gases in contact with the surface of the workpiece during stripping
圖1係一根據所主張發明之某些實施例之設備100之示意 性圖解說明。設備100具有一電漿源1〇1及一處理室1〇3, 二者由一喷淋頭組合件105隔開。電漿源i 〇〗連接至氣體入 口 111 »喷淋頭109形成喷淋頭組合件！ 〇5之底部。惰性氣 體入口 113位於電漿源1〇1下游及晶圓123與喷淋頭1〇9上 游·>在處理室103内部，一具有光阻劑/幹蝕刻副產物材料 之晶圓123搁置於一壓板（或平臺）117上。壓板117可配備有 一溫度控制機構，該溫度控制機構可在必要時加熱或冷卻 該壓板上之一晶圓。在某些實施例中，壓板丨17還經構形 以用於向晶圓123施加一偏壓。經由真空幫浦及導管η9 , 在反應室103中達到低壓》 u祖Ή八至電漿源 。引入至電漿源之氣體含有化學活性物質，該化學活 性物質將在電漿源中被離子化以形成一電聚。氣體入口 111可係任何類型之氣體入口且可包含多個埠口或噴口。 電漿源101係產生引入至該源之氣體中之活性 ^ y身从形成 -電漿之地方。在圈…顯示一 RF電衆源具有感應線圈 1 1 5 ’該感應線圈經激勵以形成電漿。經由 屯乳骽入口 113向 喷淋頭上游及電漿源下游引入一惰性氣體。該惰性氣體與 電漿混合。氣體入口 113可係任何類型之氣體入口 、 ’且可 136265.doc •13- 201015248 包含多個埠口或喷口以最佳化惰性氣體與電漿之混合。喷 淋頭109引導電聚/惰性氣趙混合物經由喷淋頭孔⑵進入 至處理室1G3+。可存在任何數目及任何佈置之喷淋頭孔 1以使處理至1〇3中之電漿/氣體混合物之均勻度最大 化。喷淋頭組合件105可電接地或可施加有一電壓，其可 捕獲及釋放某些離子且藉此改變流入至處理室ι〇3中之氣 體之組成.亦即，該氣體將含有一增大之中性物質比例。 如文中提及，可對晶圓123進行溫度控制且/或可對其施加 一RF偏壓。該電漿/惰性氣體混合物自晶圓移除光阻劑/蝕 刻副產物材料。 在所主張發明之某些實施例中，該設備不包含喷淋頭組 合件105及喷淋頭109。在該等實施例中，惰性氣體入口 113將惰性氣體直接引入至處理室中，惰性氣體在該處理 室中晶圓115上游與電漿混合。可使用各種構形及幾何結 構之電漿源1 01及感應線圈1 1 5。例如，感應線圈11 5可呈 一交錯圖案環繞在電漿源101周圍❶在另一實例中，電漿 源101可呈一圓頂形狀而非一圓柱形狀。 適當之電漿設備包含由加利福尼亞州（CA)聖何塞市（san Jose)諾發系統股份有限公司（Novellus Systems，Inc.)所供 應之伽瑪（Gamma)2100、2130、I2CP(交錯感應耦合電 漿）、G400及GxT。其他設備包含來自馬裏蘭州（Maryland) 羅克維爾市（Rockville)亞舍立科技股份有限公司（Axcelis Technologies Inc·)之熔合線（Fusion line)、來自韓國PSK 科 技股份有限公司（PSK Tech Inc,)之TERA21以及來自加利福 136265.doc -14- 201015248 尼亞州（CA)弗裏蒙特市（Fremont)馬特森科技股份有限公司 (Mattson Technology Inc.)之阿斯朋工具（Aspen tool)'。 圖2A至2D繪示離子植入及剝離作業之前及之後半導體 製造之各個階段。圖2A顯示一塗佈有光阻劑材料203之半 導體基板201。基板201可包含一或多個沈積薄膜層，例 如，氧化物薄膜、矽化物觸點及/或多晶矽薄膜，或者其 可係裸露之矽基板，包含（例如）一絕緣體上矽型基板。最 初，光阻劑材料塗佈整個基板表面》然後將光阻劑曝露於 藉由一遮罩產生之經圖案化輻射並將其顯影以移除一部分 材料，例如圖2A所示位於剩餘光阻劑材料203之間的開口 204 ° 然後曝露基板以進行一離子植入製程。在離子植入期 間，向工件或晶圓表面植入摻雜劑離子。該製程可係（例 如）一電漿浸潰式離子植入（ΡΙΠ)或離子束植入。該等離子 轟擊基板表面，包含經曝露矽層2〇1及光阻劑2〇3。借助高 能離子植入，可將少量之下伏材料2〇7濺射至光阻劑側 壁。參見圖2B。此材料可包含植入物質、電漿或離子束中 之其他材料及植入副產物之一部分。其包含矽、鋁、碳、 氟 '鈦、諸如鈷之其他觸點材料及元素與化合物兩種形式 之氧。實際之物質相依於離子植人前之基板、光阻劑及所 植入物質之組成。 在經曝露矽層20 1處，形忐一姑换灿r* 〜级、纟i摻雜區2〇9。該轟擊之離 子貪t·或強度確定該經捧雜區之深疮七度* 木度或厚度。離子流之密度 確定摻雜程度》 136265.doc -15- 201015248 該等離子還浸潰光阻劑表面，從而形成一硬殼層205。 硬殼層205可係經碳化高交聯聚合物鍵。該硬殼通常被耗 盡氫且以植入物質浸潰。硬殼層205比體光阻劑層203更密 實。相對密度相依於離子流，而硬殼層之厚度則相依於離 子能。 此硬殼層205比其下方之體光阻劑203更難剝離。硬殼層 之移除速率可比下伏體光阻劑慢50%或75%。該體光阻劑 含有相對高位準之化學鍵結氮及其一部分原始澆注溶劑。 在晶圓溫度升高（例如，l50°c以上至2〇〇。〇以上）時，該體 光阻劑可放氣並相對於硬殼層膨脹。當下伏體光阻劑增大 硬殼下之壓力時，整個光阻劑會因此"爆裂”。光阻劑爆裂 係粒子及製程缺陷之一原因，此乃因其殘餘物尤其難以自 晶圓表面及室内部零件清洗掉。由於高劑量離子植入，硬 殼層與下伏體光阻劑層之間的密度差變得更大。該硬殼亦 可變得更厚》 圖2C顯示在無法完全移除光阻劑2〇5及側壁濺射殘餘物 207之剝離之後之基板。側壁濺射殘餘物2〇7可包含在習用 剝離化學過程下不形成一揮發性化合物之粒子。該等粒子 在一習用剝離作業後仍會存在。該殘餘物還可包含用習用 剝離化學過程中所使用之反應性氧形成之植入物質之氧化 物’例如氧化硼及氧化砷。硬殼2〇5之若干部分亦可存留 在基板上。光阻劑通孔底部之硬殼側壁及拐角可因其幾何 結構而難以剝離。 該等殘餘物粒子可藉由在某些情況下進行過度剝離、使 136265.doc ,, 201015248 用氟化化學物或對晶圓進行濕清洗來移除。已發現過度剝 離在習用氧化學過程中可導致不期望之矽氧化而仍不能移 除氧化硼及氧化砷殘餘物（若存在h使用根據本發明產生 之電漿中之氟化化合物可產生氟自由基，該等氟自由基可 形成揮發性氟化硼及氟化砷。這樣有助於移除殘餘物，但 遺憾地亦可同時自基板移除下伏矽及氧化矽。使用根據本 發明實施例之特定剝離氟化化學物可減輕此問題。 硬損失隨光阻劑厚度、硬殼厚度及過度剝離百分比而變 化。用於移除較厚光阻劑之更長時間且更具侵蝕性之剝離 亦可移除更多矽。對於具有較厚硬殼之光阻劑而言，硬殼 層與體光阻劑層之間的差別更為明顯。較厚之硬殼側壁及 拐角更難以剝離。因此，經設計以移除厚硬殼之剝離製程 往往亦會移除更多矽。除殘餘物移除外，過度剝離還可用 於解決光阻劑均勻度及幾何結構問題。過度剝離係在超過 移除全部光阻劑所標稱需要之點之後繼續進行之剝離製 程。若晶圓之某些區域而非其他區域中之光阻劑已被完全 移除’則繼續進行剝離製程將導致將額外之材料（通常為 石夕及氧化石夕）自已經剝離之區域移除，通常過度剝離約為 100%。 圖2D顯示在所有殘餘物皆已被移除後之基板。較佳地， 在沒有額外矽損失及氧化且延遲最小之情況下移除殘餘 物。更較佳地’剝離製程不留下任何殘餘物且因此減少了 製程步驟之數目。 本發明所揭示製程及設備使用一具有弱氧化劑及含氟氣 136265.doc -17- 201015248 體之基於氬之電漿化學物以達成一矽損失最小且大致沒有 殘餘物之剝離製程。認為矽損失已減小，此乃因電漿中之 氟自由基與處理氣體中之氫組合以形成氟化氫（HF)，而非 以氟自由基形式繼續存在並蝕刻下伏矽。基於一 SEM檢查 或一缺陷檢查工具（例如來自加利福尼亞（CA)密耳派塔斯 (Milpitas)之KLA騰塞爾（KLA_Tenc〇r)之缺陷檢查工具）已1 is a schematic illustration of an apparatus 100 in accordance with certain embodiments of the claimed invention. Apparatus 100 has a plasma source 1〇1 and a processing chamber 1〇3 separated by a showerhead assembly 105. The plasma source i 〇 is connected to the gas inlet 111 » The shower head 109 forms the showerhead assembly! At the bottom of 〇5. The inert gas inlet 113 is located downstream of the plasma source 〇1 and upstream of the wafer 123 and the shower head 〇9. · Inside the processing chamber 103, a wafer 123 having a photoresist/dry etch by-product material is placed on the wafer 123 A pressure plate (or platform) 117. The platen 117 can be equipped with a temperature control mechanism that can heat or cool one of the wafers on the platen as necessary. In some embodiments, the platen 17 is also configured for applying a bias to the wafer 123. Through the vacuum pump and the conduit η9, a low pressure is reached in the reaction chamber 103. The gas introduced to the plasma source contains a chemically active species that will be ionized in the plasma source to form an electropolymer. The gas inlet 111 can be any type of gas inlet and can include a plurality of ports or spouts. The plasma source 101 is responsible for generating the activity introduced into the gas of the source from where the plasma is formed. In the circle ... shows an RF power source having an induction coil 1 1 5 ' The induction coil is energized to form a plasma. An inert gas is introduced via the mash inlet 113 to the upstream of the showerhead and downstream of the plasma source. The inert gas is mixed with the plasma. The gas inlet 113 can be any type of gas inlet, 'and can be 136265.doc • 13- 201015248 contains a plurality of ports or spouts to optimize mixing of the inert gas with the plasma. The showerhead 109 directs the electropolymer/inert gas mixture to the processing chamber 1G3+ via the showerhead aperture (2). Any number and any arrangement of showerhead holes 1 may be present to maximize the uniformity of the plasma/gas mixture processed into 1〇3. The showerhead assembly 105 can be electrically grounded or can be applied with a voltage that captures and releases certain ions and thereby changes the composition of the gas flowing into the processing chamber ι3. That is, the gas will contain an increase. The proportion of neutral substances. As mentioned herein, wafer 123 can be temperature controlled and/or an RF bias can be applied thereto. The plasma/inert gas mixture removes the photoresist/etching byproduct material from the wafer. In certain embodiments of the claimed invention, the apparatus does not include a showerhead assembly 105 and a showerhead 109. In such embodiments, the inert gas inlet 113 directs the inert gas directly into the processing chamber where the inert gas is mixed with the plasma upstream of the wafer 115. A plasma source 101 and an induction coil 1 15 can be used in a variety of configurations and geometries. For example, the induction coils 1 15 may be wrapped around the plasma source 101 in a staggered pattern. In another example, the plasma source 101 may have a dome shape rather than a cylindrical shape. Suitable plasma equipment includes Gamma 2100, 2130, I2CP (interlaced inductively coupled plasma) supplied by Novellus Systems, Inc., San Jose, CA (CA). ), G400 and GxT. Other equipment includes the Fusion line from Axcelis Technologies Inc., Rockville, Maryland, from PSK Tech Inc, Korea. TERA21 and the Aspen tool from California, USA, 136265.doc -14- 201015248, Fremont, USA (Fremont) Mattson Technology Inc. '. Figures 2A through 2D illustrate various stages of semiconductor fabrication before and after ion implantation and stripping operations. Figure 2A shows a semiconductor substrate 201 coated with a photoresist material 203. Substrate 201 may comprise one or more deposited thin film layers, such as oxide films, germanide contacts, and/or polysilicon films, or may be exposed germanium substrates, including, for example, an insulator-on-silicon substrate. Initially, the photoresist material is applied to the entire surface of the substrate. The photoresist is then exposed to patterned radiation generated by a mask and developed to remove a portion of the material, such as the remaining photoresist as shown in FIG. 2A. The opening 204° between the materials 203 is then exposed to the substrate for an ion implantation process. Dopant ions are implanted onto the workpiece or wafer surface during ion implantation. The process can be, for example, a plasma impregnation ion implantation (ion) or ion beam implantation. The plasma bombards the surface of the substrate, including the exposed tantalum layer 2〇1 and the photoresist 2〇3. With high energy ion implantation, a small amount of underlying material 2〇7 can be sputtered to the side walls of the photoresist. See Figure 2B. This material may comprise implant material, plasma or other materials in the ion beam and a portion of the implant by-product. It contains niobium, aluminum, carbon, fluorine 'titanium, other contact materials such as cobalt, and oxygen in both forms of elements and compounds. The actual material depends on the composition of the substrate, photoresist, and implanted material before ion implantation. At the exposed layer 20 1 , the shape of the r 姑 r r r r r r r 纟 纟 。 。 。 。 。 。 。 。 。 。 。 。 。. The bombardment of the ion greet t or the intensity determines the deep sore seven degrees* woodiness or thickness of the handicapped zone. The density of the ion current determines the degree of doping. 136265.doc -15- 201015248 The plasma also impregnates the surface of the photoresist to form a hard shell layer 205. The hard shell layer 205 can be a carbonized high crosslinked polymer bond. The hard shell is typically depleted of hydrogen and impregnated with the implant material. The hard shell layer 205 is denser than the bulk photoresist layer 203. The relative density is dependent on the ion current, while the thickness of the hard shell is dependent on the ion energy. This hard shell layer 205 is more difficult to peel off than the bulk photoresist 203 below it. The hard shell removal rate can be 50% or 75% slower than the underlying photoresist. The bulk photoresist contains a relatively high level of chemically bonded nitrogen and a portion of its original casting solvent. The bulk photoresist can deflate and expand relative to the hard shell layer when the wafer temperature rises (e.g., above 150 ° C to above 2 Torr.). When the underlying photoresist increases the pressure under the hard shell, the entire photoresist will "break". One of the causes of the photoresist burst particles and process defects is due to the fact that the residue is particularly difficult to self-wafer. The surface and interior parts are cleaned away. Due to the high dose ion implantation, the difference in density between the hard shell layer and the underlying photoresist layer becomes larger. The hard shell can also become thicker. Figure 2C shows The substrate after stripping of the photoresist 2〇5 and the sidewall sputter residue 207 cannot be completely removed. The sidewall sputter residue 2〇7 may comprise particles which do not form a volatile compound under conventional stripping chemistry. The particles may still be present after a conventional stripping operation. The residue may also comprise oxides of implant materials such as boron oxide and arsenic oxide formed by reactive oxygen used in conventional stripping chemistry. Hard shell 2〇5 Some of the portions may also remain on the substrate. The hard shell sidewalls and corners at the bottom of the photoresist through-hole may be difficult to peel due to their geometry. The residue particles may be excessively stripped in some cases, making 136265 .doc ,, 201015 248 Removal with fluorinated chemicals or wet cleaning of wafers. It has been found that excessive exfoliation can lead to undesirable ruthenium oxidation during conventional oxidation processes without the removal of boron oxide and arsenic oxide residues (if h is present) The use of a fluorinated compound in a plasma produced according to the present invention produces fluorine radicals which form volatile boron fluoride and arsenic fluoride. This helps to remove residues, but unfortunately At the same time, the underlying ruthenium and ruthenium oxide are removed from the substrate. This problem can be alleviated by using a specific stripping fluorination chemistry according to an embodiment of the invention. Hard loss varies with photoresist thickness, hard shell thickness, and excessive peel percentage. The longer and more aggressive stripping of the thicker photoresist removes more germanium. For photoresists with thicker hard shells, between the hard shell and the bulk photoresist layer The difference is even more pronounced. Thicker hard shell sidewalls and corners are more difficult to strip. Therefore, stripping processes designed to remove thick hard shells tend to remove more defects. Except for residue removal, excessive stripping is also Can be used to solve all photoresists Degree and geometry issues. Excessive stripping is a stripping process that continues beyond the point required to remove all photoresist. If the photoresist in some areas of the wafer, but not others, has been completely removed In addition to 'continuing the stripping process will result in the removal of additional material (usually Shi Xi and Oxide Xi) from the stripped area, usually over 100%. Figure 2D shows that all residues have been removed The substrate is removed. Preferably, the residue is removed without additional helium loss and oxidation with minimal delay. More preferably, the 'peeling process leaves no residue and thus reduces the number of process steps. The process and apparatus disclosed herein use a argon-based plasma chemistry having a weak oxidant and a fluorine-containing gas 136265.doc -17-201015248 to achieve a minimum and minimal residue-free stripping process. It is believed that the ruthenium loss has been reduced because the fluorine radicals in the plasma combine with the hydrogen in the process gas to form hydrogen fluoride (HF) rather than continuing to exist as a fluorine radical and etching the underlying ruthenium. Based on a SEM inspection or a defect inspection tool (such as the defect inspection tool from KLA Tencel (KLA_Tenc〇r) from Milpitas, California (CA))
月電漿中一氧化碳及四氟化碳之組合剝離掉該後高劑 量植入光阻劑並使基板沒有殘餘物或大致沒有殘餘物。此 可以最小程度之過度剝離來完成（例如，小於約100%過度 剝離）。根據各個實施例，當—缺陷檢查卫具偵測到約二 於3/。之曰曰粒被檢查出具有聚合物缺陷時可指示一大致 沒有殘餘物之情況。 可接又之最小石夕知失可為約3埃或更少較佳地小於約1 埃。裝置需求推動了此最小石夕損失，而與可影響石夕損失之 光阻劑厚度以及其他因數無關。為減少量測錯誤，通常藉 由在使用-電子顯微鏡（例如透射電子顯微鏡）量測裝置蛛 構上之㈣失之前先在同—_製程中對晶圓進行若干次 (例如5次）處理來量測㈣失。可使用如此獲得之平 失來比較各種製程。 ？貝 製程參數 工呀八 向電漿源引人-通常包括^素氫之含氫氣體。引入 漿源之氣體通常含有化學活性物 電裝源中被離子化以形成一電人該化學活性物質將在 136265.doc •18- 201015248 諸如四氟化碳之含氟氣體、包含c2f6及氫氟碳化合物 2其他碳氟化合物、元素氟、三氟化氮、六氣化硫。在某 實施例中，該含氟氣體為四氟化碳。在某些具體實施例 引入至電漿源之氣體包括體積佔約〇 至約3%之間 &四氟化碳。引人至電漿源之氣體可包含-弱氧化劑，例 如，二氧化碳、-氧化碳、二氧化氮、氧化氛及/或水。 在某些實施例中，.該弱氧化劑為二氧化碳。 根據各種實施例，該入口氣體可包含約1與99之間的體 刀比約80與99.9之間的體積百分比或約95體積百分 匕之刀子氫、約〇與99之間的體積百分比或〇與J 〇之間的體 積百分比之弱氧化劑及約〇丨與丨〇之間的體積百分比之一 或多種含氟化合物。在某些實施例中，該入口氣體可包含 約95至"之間的體積百分比之分子氫、約0.1與3之間的體 積百刀比之弱氧化劑及約Q」與i之間的體積百分比之一或 多種含氟化合物。在具體實施例中引入至電浆源之氣體 癱 包括約95%至99%之元素氫、約^/❶之二氧化碳及約1%或 更少之四氟化碳，所有該等氣體比例均按體積計。 引入至電漿源之氣鱧可被預先混合、部分混合或可不混 合。個別氣體源可在被引入至電漿源之前先流入至-混合 通風至中。在其他實施例中，該等不同氣體可單獨地進入 電漿源。引入至電漿源之氣體在用於一多站室中之不同反 應站時可具有不同之組成。例如，在6站室中，站1或站6 可採用具有相對較高含氟氣體量之處理氣體來分別移除硬 殼或殘餘物。其他站中之一者或多者可採用具有極少或不 136265.doc -19- 201015248 具有含氟氣體之處理氣體。亦可使用不具有二氧化碳或弱 氧化劑之處理氣體。 使用具有弱氧化劑之基於氫之電漿來剝離光阻劑及蝕刻 材料之方法揭示於美國專利第7,288,484號中，其整體内容 出於所有目的以引用方式併入本文中。 電漿產生The combination of carbon monoxide and carbon tetrafluoride in the monthly plasma strips off the post-high dose implanted photoresist and leaves the substrate free of residue or substantially free of residue. This can be done with minimal over-stripping (e. g., less than about 100% over-stripping). According to various embodiments, the defect inspection guard detects about two or three. The granules are checked to have a polymer defect indicating a substantially no residue. The minimum and the minimum can be about 3 angstroms or less, preferably less than about 1 angstrom. Device demand has driven this minimum loss of daytime, regardless of the photoresist thickness and other factors that can affect the loss of the stone. In order to reduce the measurement error, the wafer is usually processed several times (for example, five times) in the same process by using a -electron microscope (for example, a transmission electron microscope). Measurement (four) lost. The resulting offset can be used to compare various processes. ? The process parameters of the eight-way plasma source are usually introduced - usually including the hydrogen-containing gas of hydrogen. The gas introduced into the slurry source usually contains a chemically active material that is ionized to form an electric person. The chemically active substance will be at 136265.doc • 18- 201015248. A fluorine-containing gas such as carbon tetrafluoride, including c2f6 and hydrofluoride. Carbon compound 2 Other fluorocarbons, elemental fluorine, nitrogen trifluoride, and hexa-sulfurized sulfur. In one embodiment, the fluorine-containing gas is carbon tetrafluoride. The gas introduced to the plasma source in certain embodiments includes a volume between about 〇 and about 3% & carbon tetrafluoride. The gas introduced to the plasma source may contain a weak oxidant such as carbon dioxide, carbon monoxide, nitrogen dioxide, an oxidizing atmosphere and/or water. In certain embodiments, the weak oxidant is carbon dioxide. According to various embodiments, the inlet gas may comprise a volumetric ratio between about 1 and 99 of about 80 and 99.9 volume percent or about 95 volume percent of knife hydrogen, a volume percentage between about 〇 and 99 or A weak percentage of the oxidizing agent between 〇 and J 及 and a volume percentage of one or more fluorochemicals between about 〇丨 and 丨〇. In certain embodiments, the inlet gas may comprise between about 95 and 5% by volume of molecular hydrogen, between about 0.1 and 3 by volume of a weak oxidant, and between about Q" and i. One or more fluorochemical compounds. The gas enthalpy introduced into the plasma source in a specific embodiment comprises about 95% to 99% elemental hydrogen, about ❶/❶ of carbon dioxide, and about 1% or less of carbon tetrafluoride, all of which are Volume meter. The gas introduced into the plasma source may be pre-mixed, partially mixed or may not be mixed. Individual gas sources can be flowed into-mixed to the medium before being introduced to the plasma source. In other embodiments, the different gases may enter the plasma source separately. The gas introduced to the plasma source can have a different composition when used in different reaction stations in a multi-station chamber. For example, in a six station, station 1 or station 6 may employ a process gas having a relatively high amount of fluorine gas to remove the hard shell or residue, respectively. One or more of the other stations may employ a process gas having a fluorine-containing gas with little or no 136265.doc -19-201015248. Process gases that do not have carbon dioxide or weak oxidants can also be used. A method of using a hydrogen-based plasma with a weak oxidant to strip the photoresist and etch the material is disclosed in U.S. Patent No. 7,288, 484, the disclosure of which is incorporated herein in its entirety by reference. Plasma generation
可使用根據本發明之各種類型之電漿源’包含RF、DC 及基於微波之電漿源。在一較佳實施例中，使用一下游RF 電漿源。通常，用於一 300毫米之晶圓之RF電漿功率處於 約300瓦至約10千瓦範圍内。在某些實施例中，rf電漿功 率處於約1000瓦與2000瓦之間。 惰性氣想 剝離製程中可使用各種惰性氣體。如文中已解釋在電 漿源下游及喷淋頭上游引入該等氣體以供與電漿混合。在 某些實施例中，該惰性氣體為氩或氦。在—具趙實施例 中，該惰性氣體為氬。然而，可使用任何惰性氣體包含 氮及氦。在某些實施例中’惰性氣體流速約為氫流速之 0.15倍與1〇.〇倍之間。在某 杜呆二具體實施例中，惰性氣體流 速約為氫流速之1倍與3倍之間或約為其2倍。 惰性氣If入口 惰性氣體入口可係各種類型之氣體入口中之任一種且 可包3多個埠口或喷口以促進與電漿混合。亦可最佳化進 氣喷口之角度以便最大程度地混合。在—個實施例中，存 在至J四個惰性氣趙進氣喷口。在另—實施例中，存在Μ 136265.doc 201015248 個進氣噴口。在某些具體實施例中， ^ ^ ^ 自電漿源底部量測所 仔之進氣喷口之角度為零度，使得 .^ ^ 消Γ生氣體垂直於電漿流 自電漿源進入噴淋頭組合件（或者， ^ .. 在友有喷淋頭組合件 况下進入處理室）之方向被注入。零度之角度亦對應 於-平行於工件面之方向。當然，亦可採用其他入口角 度’雖然在諸多實施例中該等角度通常平行於工件面。 喷淋頭组合件Various types of plasma sources according to the present invention can be used, including RF, DC, and microwave based plasma sources. In a preferred embodiment, a downstream RF plasma source is used. Typically, RF plasma power for a 300 mm wafer is in the range of about 300 watts to about 10 kilowatts. In certain embodiments, the rf plasma power is between about 1000 watts and 2000 watts. Inert Gases Various inert gases can be used in the stripping process. It has been explained that the gases are introduced downstream of the plasma source and upstream of the showerhead for mixing with the plasma. In certain embodiments, the inert gas is argon or helium. In the embodiment of the invention, the inert gas is argon. However, any inert gas may be used to contain nitrogen and helium. In some embodiments, the inert gas flow rate is between about 0.15 times the hydrogen flow rate and between 1 and . In a specific embodiment, the inert gas flow rate is between about 1 and 3 times the hydrogen flow rate or about twice. Inert Gas If Inlet The inert gas inlet can be any of various types of gas inlets and can contain more than 3 ports or spouts to facilitate mixing with the plasma. The angle of the inlet spout can also be optimized for maximum mixing. In one embodiment, there are four inert gas inlets to J. In another embodiment, there are Μ136265.doc 201015248 intake nozzles. In some embodiments, ^ ^ ^ measures the angle of the inlet nozzle from the bottom of the plasma source to zero degrees, such that the cathode gas is perpendicular to the plasma stream from the plasma source into the shower head. The assembly (or, ^.. enters the processing chamber with the sprinkler assembly) is injected. The angle of zero also corresponds to - parallel to the direction of the workpiece face. Of course, other inlet angles may be employed, although in many embodiments the angles are generally parallel to the workpiece face. Sprinkler assembly
根據本發明各種實施例’電漿氣體經由—喷淋頭組合件 而分配至卫件表面。該喷淋頭組合件可接地或可施加一電 壓（例如，（Μ_瓦之偏壓）以吸引某些帶電物質而又不會 影響中性物質流向晶圓。電漿中之諸多帶電物質在喷淋頭 處重新組合。該組合件包含喷淋頭自t，該喷淋頭可係引 導電漿及惰性氣體混合物進人反應室中之帶孔金屬板。該 喷淋頭在較大區域中重新分配來自冑聚源之活性氫，從 而允許使用較小之電聚源。可設置該喷淋頭孔之數目及佈 ^ ’以最佳化剝離速率及剝離速率均勻度。若冑聚源位於 a曰圓上方中央，則喷淋頭中央之喷淋頭孔宜更小且更少， 以將活性氣體推向外部區。該喷淋頭可具有至少ι〇〇個 孔。適當之喷淋頭包含可自加利福尼亞（CA)聖何塞市 e)諾發系統股伤有限公司（N〇veuus Systems， Inc·)購得 之伽瑪（Gamma)xPR噴淋頭或GxT落入式喷淋頭。 在其中不存在喷淋頭組合件之實施例中，電漿與惰性氣 體混合物直接進入處理室。 處理室 136265.doc 21 201015248 —該處理室可係：於正在執行之剝離作業之任何適當反應 至。其可係-多至設備中之一個室，或其可僅為 備。該室亦可包含於其中之同時處理不同晶圓之多個站： 該處理室可係其中發生植入、钱刻或其他以光阻劑為媒介 之製程之冋-至。在其他實施例中M呆留一單獨室用於剝 離。處理室壓力可處於自約300毫托至2托之間的範圍内。 在某些實施例中，㈣力處於自約〇9托至hi托範圍内。In accordance with various embodiments of the present invention, plasma gas is distributed to the surface of the guard via a sprinkler assembly. The showerhead assembly can be grounded or can apply a voltage (eg, (Μ-watt bias) to attract certain charged species without affecting the flow of neutral material to the wafer. Many charged species in the plasma are The showerhead is recombined. The assembly includes a showerhead from t which directs the plasma and inert gas mixture into a perforated metal plate in the reaction chamber. The showerhead is in a larger area. Redistributing the active hydrogen from the cesium source allows for the use of a smaller source of electropolymerization. The number and layout of the sprinkler holes can be set to optimize the strip rate and peel rate uniformity. The center of the top of the dome is smaller, and the sprinkler hole in the center of the sprinkler should be smaller and less to push the active gas toward the outer zone. The sprinkler can have at least one hole. Suitable sprinklers Contains a Gamma xPR sprinkler or GxT drop-in sprinkler available from N〇veuus Systems, Inc., San Jose, CA (CA). In embodiments in which the showerhead assembly is absent, the plasma and inert gas mixture directly enters the processing chamber. Processing Chamber 136265.doc 21 201015248 - The processing chamber can be: any suitable reaction to the stripping operation being performed. It can be as many as one of the devices, or it can be prepared only. The chamber may also include a plurality of stations that process different wafers simultaneously: the processing chamber may be in the process of implantation, etching, or other photoresist-mediated process. In other embodiments M leaves a separate chamber for stripping. The process chamber pressure can range from about 300 mTorr to 2 Torr. In certain embodiments, the (iv) force is in the range from about 托9 Torr to hi.
該處理室包含在其上執行剝離作業之一或多個處理站。 在某些實施例中，該-或多個處理站包含一預熱 丨、 -個剝離站及-過灰化站。^及#關聯X字揭示處理= 及處理站之各種特徵。該晶圓支撐件經構形以在處理期間 支撐晶圓。該晶圓支撐件還可在處理期間向晶圓及自晶圓 傳遞熱量以按需要調節晶圓溫度。在某些實施例中，該晶 圓被支撐在複數個最小觸點上且不物理地接觸該晶圓支撐 件表面平面。一心軸拾起該晶圓並將該晶圓自一個站轉移 至另一站。 適錳之電裝至及系統包含由加利福尼亞州（CA)聖何塞市 (San Jose)諾發系統股份有限公司（Novelius Systems，Inc) 所供應之伽瑪（Gamma)2100、2130、I2CP(交錯感應柄合電 漿）、G4〇0及GxT。其他系統包含來自馬裏蘭州（Maryland) 羅克維爾市（Rockville)亞舍立科技股份有限公司（Axcelis Technologies Inc.)之熔合線（Fusion line)、來自韓國PSK 科 技股份有限公司（PSK Tech Inc.)之TERA21以及來自加利福 尼亞州（CA)弗裏蒙特市（Fremont)馬特森科技股份有限公司 136265.doc • 22· 201015248 (Mattson Technology Inc.)之阿斯朋工具（Aspen t〇〇1)。另 外’可將各種剝離室構形至群集工具上。例如，可將一剝 離室添加至可自加利福尼亞（CA)聖塔克拉拉（Santa aara) 之應用材料公司（Applied Materials)購得之森土拉（Centura) 群集工具。 工件 在較佳實施例中，根據本發明方法及設備使用之工件為 一半導體晶圓《可使用任何大小之晶圓。大多數現代晶圓 製造設施使用200毫米或300毫米之晶圓。如上文所揭示， 本文所揭示之製程及設備在一諸如蝕刻、離子植入或沈積 等處理作業後剝離光阻劑。本發明適用於具有極小特徵或 臨界尺寸（例如，100奈米以下、65奈米或者45奈米或小於 45奈米）之晶圓。所揭示之HDIS之低矽損失特徵尤其適用 於尚級邏輯裝置之極淺結。本發明亦特別適用於經歷生產 線前端（FE0L)離子植入（尤其係高劑量離子植入）之晶圓。 該由電漿活化之物質與晶圓上之光阻劑及濺射殘餘物反 應。在晶圓處，反應性氣體可包含若干由電漿活化之物 質、惰性氣體、自由基、帶電物質及氣體副產物。各種氫 物質之體積濃度可約為晶圓處氣體之2〇_8〇〇/。。各種氟物質 之體積濃度可為0.01%至約2%或小於1。/(^弱氧化劑中之各 種物質之體積濃度可為0.05至約5%或約1.2%。該等物質可 包含 H2、H2+、H+、H*、e-、〇H、〇*、C0、c〇2、h2〇、 HF、F*、F.、CF、CF2及 CF3。 製程條件可端視晶圓大小而不同。在本發明某些實施例 136265.doc -23- 201015248 中’需要在向工件表面塗施電漿時使工件保持在一特定溫 度下°晶圓溫度可處於約110攝氏度與約500攝氏度之間的 範圍内°為減小如上文所述之光阻劑爆裂之可能性，較佳 地緩慢增加晶圓溫度直至已移除足夠之硬殼且光阻劑爆裂 不再成為一問題為止。初始站溫度可為約110攝氏度至約 200攝氏度’例如，約ι8〇攝氏度。隨後之站可在良好之制 離速率下成功地使用諸如285攝氏度及約350攝氏度之較高 溫度。 # 製程流程 圖3係一顯示根據本發明某些實施例之各種作業之製程 流程圖。一晶圓定位於反應室中之一晶圓支撐件上。在作 業301處，向一電漿源引入一含氫氣體。在作業3〇3中自該 氣體產生一電漿。隨著更多氣體添加至該電漿源，該電聚 向下游流動並與在作業305處引入之一惰性氣體混合。電 漿中之某些帶電物質可組合以形成中性而活化之物質。該 活化物質與惰性氣鱧一起流經一喷淋頭面板並在作業3〇7 β 處與一晶圓表面上之光阻劑反應。該反應產生揮發性副產 物’該等副產物可在作業309處用一真空幫浦在處理區域 附近移除。可使用不同製程參數將該製程重複一次或多 次。例如，可在該製程之疊代期間加熱或冷卻該晶圓。在 另一實例中，可使用不同之初始含氫氣體與惰性氣體組成 及流速。較佳地，該等疊代中之至少一者涉及包含元素 氫、二氧化碳及四氟化碳之基於氫之氣體。該等疊代中之 一者或多者可涉及不包含二氧化碳或四氟化碳之含氫氣 136265.doc •24- 201015248 二實:種疊代可經設計以針對不同部 -S- 如上論述之硬殼及體光阻劑區 之後同劑量植入弁 ρ劑。第一剝離站中之第一剝離疊代可 經没計以剝離硬 ^ 毂層。該第一剝離疊代可涉及使用元素 化灭（或另一弱氧化劑）（且四氟化碳（或另一含氟 氣體）可有可益、本Α ^^ 生一電漿來特別地剝離該硬殼層。當硬 殼層足夠薄或 參 ❹ 一 一曰 疋全移除時，一第二剝離疊代通常可在 门Β日圓'皿度下剝離體光阻劑連同殘餘物以及剩餘硬殼 θ I第一剝離製程可在不同於該第一剝離製程之處理站 中執行肖第二剝離製程可採用不使用弱氧化劑或含氣氣 體或兩者均不使用而產生之電漿。在移除體光阻劑之後， 採用不同氣體組成之又—剝離製程可經設計以剝離殘餘物 (若存在）。此殘餘物剝離製程可採用一含敗氣體來移除任 何經氧化植入物質。上文所描述之剝離疊代可 以任何次序 或頻率來執行，此可端視於處理站數目及待剝離之光阻劑 之組成而定。熟悉此項技術者將能夠調整本文所論述之概 念以剝離對剝離化學物有較低或較高抗耐性之較厚或較薄 硬殼。此外，本文所論述之概念可適用於其他情況：藉由 針對不同光阻劑層使用不同剝離化學物來剝離具有不同特 性之多於一個光阻劑層。 實例1 在此實例中’研究二氧化碳及四氟化碳對殘餘物之影 響°用45奈米之結構來圖案化3〇〇毫米大小之晶圓並用ρ+ 136265.doc -25· 201015248 區中之LDD(輕摻雜汲極）對其進行離子植人。所得之後高 劑量植入之光阻劑約為2000埃厚，且帶有一約63〇埃厚之 硬殼。 在具有5個電漿站之剝離室中剝離晶圓。該電漿在2麵 瓦之RF功率下產生。將該等晶圓在每一站處曝露於由電漿 活化之反應性氣體達約2G秒，且總共曝露達97秒。晶圓支 撐件之溫度為350攝氏度。室壓力為_毫托。氮流速為6 — (標準狀態升每分鐘），且下游氬流速為14 slm。二氧化碳 ® 流速在0與150 seem(標準狀態立方釐米每分鐘）之間不等。 四氟化碳流速在20與40 sccm之間不等。注意，該等流速 係具有5個電漿站之整個室之總流速。每一站接收該總流 速之約1/5。 圖4A至4D、續·示用各種由電漿活化之反應性氣體剝離之 前及之後之晶圓之SEM照片。圖4A繪示剝離之前之晶圓之 一小部分。結構401為後高劑量植入光阻劑。墊4〇5在其上 在圖案化製程期間移除光阻劑的地方包含結構4〇3。因此 ® HDIS製程移除結構401。 在如圖4B中所繪示之第一晶圓中，20 seem之四氟化碳 及150 seem之二氧化碳添加至氫以形成電漿《在該製程 後，留下蟲狀殘餘物407。在如圖4C中所繪示之第二晶圓 中，40 seem之四氟化碳及150 seem之二氧化碳添加至氫以 形成電漿。此剝離不產生任何殘餘物，如圖4C中所示。在 如圖4D中所繪示之又一晶圓中，40 seem之四氟化碳添加 至氫且不添加二氧化碳以形成電漿。再次觀察到所形成之 136265.doc -26- 201015248 蟲狀殘餘物407。此結果顯示，將二氧化碳與四氟化碳一 起添加可在基於氯之HDIS中產生無殘餘物薄膜。 實例2 在此實例中’獨立地檢查：氧化碳流速及四氟化碳流速 #矽損失之影響。量測在與實例i相同之製程條件下將四 1化碳流逮怪定保持在4〇 scem之情況下二氧化碳流速為 〇、50、100及150 3_時肋18之矽損失。將結果繪製於圖 令夕損失在一氧化奴流速為15〇 seem時最低且在不添 加一氧化碳時最尚❶此結果顯示，電漿中存在一些二氧化 碳會減少矽損失。 還量測在與實例1相同之製程條件下將二氧化碳流速恆 定保持在150 sccm之情況下四氟化碳流速為〇、4〇、6〇、 80及1003“111時11〇18之矽損失。將結果繪製於圖化中。矽 損失在四氟化碳流速為6〇至go seem時呈現峰值。 該等結果顯示，矽損失受二氧化碳及四氟化碳之流速影 藝響。對於一特定薄膜，熟悉此項技術者將能夠設計一種使 石夕損失最小化並使該薄膜上無殘餘物之Hdis製程。 實例3 在另一實例中，相關於矽損失及剝離殘餘物研究在不同 站處使用不同氣體組成之影響。其製程條件與實例1之製 程條件相同’除晶圓支撐件溫度為250攝氏度之外。在— 第一製法中，以40 seem之總流速在所有站中採用四氟化 碳。在一第二製法中，以20 seem之總流速（每站1〇 seem) 將四氟化碳僅遞送至RF站1與2。將二氧化碳流速恆定保持 I36265.doc -27- 201015248 在 1 50 seem 〇 在這兩種情況下，均在HDIS製程之後獲得無殘餘物基 板。第一製法中之平均矽損失為每循環8>1A，且第二製法 中之平均石夕損失為6.7A，減少了約17%。一循環係指完整 之一次通過工具’包含所有站處之處理。此結果顯示，使 用不同氣體組成之順序剝離製程可減少矽損失且同時維持 無殘餘物基板。 實例4 在此實例中，研究每站之短製程時間及較低四氟化碳流 速之影響。在第一製法中，不添加四氟化碳且製程時間為 每站20秒。在第二製法中，以10 seem之流速添加四氟化 碳，其中每站有10秒之剝離製程時間。在兩種製法中，晶 圓支撐件溫度均為285攝氏度。 在第一製法中，由於電漿中沒有四氟化碳，因而在剝離 後發現殘餘物。每循環之平均矽損失為1.93 A。在第二製 法中，由於四氟化碳流速減小且製程減少，該基板沒有殘 餘物且具有每循環3.12 A之平均矽損失。雖然第一製法具 有較低之矽損失，但基板在剝離後並非沒有殘餘物。此結 果顯-、了使用減小之四氟化碳流速以及較短之製程時間 來產生一無殘餘物基板。 實例5 在此實例中，將四氟化碳引入至不同站處之電漿源中。 在第製法中，將5 seem之四氟化碳引入至i中。在 第一製法中，將5 seem之四氟化碳引入至rF站3中。在第 I36265.doc .28- 201015248 一循環後及第五循環後量測矽損失並求平均。其他製程參 數與實例1之製程參數相同。 第一製法產生一無殘餘物基板。使用四氟化碳之第一循 環後之矽損失為14.4 A。第五循環後之矽損失為186 A。 每循環之平均矽損失自14.4 A減小至3.7 A。 在使用第二製法之HDIS後可在基板上觀察到少量之殘 餘物。第一循環後之矽損失為6 9 A，其小於第一製法之 矽損失。第五循環後之矽損失為1〇 3 A。每循環之平均矽 損失自6.9埃減少至2.1埃。 此結果顯示使用此化學物之矽損失為自限制性反應，其 中大邛刀秒損失在第一循環中發生。額外之處理不移除更 多之矽。此可比其中總的矽損失與處理時間成比例之習用 氧與氟剝離化學物更有利。在必須進行過度剝離之情況下 (例如，當光阻劑厚度不均勻時），氧化學物將導致比所揭 示之氫化學物更多之矽損失。 此結果還顯示，在不使用四氟化碳之情況下，第一循環 矽損失減少。熟悉此項技術者可能夠延遲四氟化碳之引入 以減少總矽損失。 應注意，顯示該等具體實例之實驗結果以闡明及圖解說 明本發明方法之高效性且不意指將本發明限於任何特定實 施例。 【圖式簡單說明】 圖1係一顯示根據所主張發明之某些實施例且適於實踐 所主張發明之方法之設備之示意性圖解說明。 136265.doc -29- 201015248 圖2A至2D繪示離子植入及剝離作業之前及之後半導體 製造之各個階段。 圖3係一顯示根據本發明某些實施例之各種作業之製程 流程圖。 圖4A至4D繪示在根據本發明各實施例之各種條件下剝 離之光阻劑圖案在剝離前及剝離後之SEM照片。 圖5A係一使用根據本發明各實施例之各種二氧化碳流速 之HDIS之矽損失曲線。 • 圖5B係一使用根據本發明各實施例之各種四氟化碳流速 之HDIS之矽損失曲線。 【主要元件符號說明】 100 設備 101 電漿源 103 處理室 105 噴淋頭組合件 109 喷淋頭 111 氣體入口 113 惰性氣體入口 115 感應線圈 117 壓板 119 導管 121 喷淋頭孔 123 晶圓 201 基板 136265.doc _ 30 - 201015248 203 204 205 207 209 401 403 405 φ 407 光阻劑材料 開口 硬殼層 側壁濺射殘餘物 摻雜區 結構 結構 墊 殘餘物The processing chamber includes one or more processing stations on which the stripping operation is performed. In some embodiments, the one or more processing stations include a preheating station, a stripping station, and an over-ashing station. ^ and # associated X words reveal processing = and various features of the processing station. The wafer support is configured to support the wafer during processing. The wafer support also transfers heat to and from the wafer during processing to adjust the wafer temperature as needed. In some embodiments, the wafer is supported on a plurality of minimum contacts and does not physically contact the wafer support surface plane. A mandrel picks up the wafer and transfers the wafer from one station to another. The Mn-based electrical installation and system includes Gamma 2100, 2130, I2CP (interlaced sensor handles) supplied by Novelius Systems, Inc. of San Jose, CA (CA). Combined with plasma), G4〇0 and GxT. Other systems include the Fusion line from Axcelis Technologies Inc., Rockville, Maryland, and PSK Tech Inc. from Korea. TERA21 and Aspen Tool (Aspen t〇〇1) from Matton Technology Inc., Fremont, CA (136265.doc • 22·201015248 (Mattson Technology Inc.)). Alternatively, various stripping chambers can be configured onto the cluster tool. For example, a stripping chamber can be added to a Centura cluster tool available from Applied Materials, Santa Aara, California (CA). Workpiece In a preferred embodiment, the workpiece used in accordance with the method and apparatus of the present invention is a semiconductor wafer that can be used with wafers of any size. Most modern wafer fabrication facilities use 200 mm or 300 mm wafers. As disclosed above, the processes and apparatus disclosed herein strip the photoresist after a processing operation such as etching, ion implantation or deposition. The invention is applicable to wafers having very small features or critical dimensions (e.g., below 100 nm, 65 nm or 45 nm or less than 45 nm). The low loss characteristics of the disclosed HDIS are particularly suitable for very shallow junctions of state-of-the-art logic devices. The invention is also particularly applicable to wafers undergoing line front end (FEOL) ion implantation (especially high dose ion implantation). The plasma activated material reacts with the photoresist and sputtering residue on the wafer. At the wafer, the reactive gas may comprise a number of plasma activated materials, inert gases, free radicals, charged species, and gaseous byproducts. The volume concentration of various hydrogen species can be about 2 〇 8 〇〇 / of the gas at the wafer. . The volume concentration of the various fluorine species may range from 0.01% to about 2% or less. /(^ The volume concentration of each substance in the weak oxidant may be from 0.05 to about 5% or about 1.2%. The substances may include H2, H2+, H+, H*, e-, 〇H, 〇*, C0, c 〇2, h2〇, HF, F*, F., CF, CF2, and CF3. Process conditions may vary depending on wafer size. In some embodiments of the invention 136265.doc -23-201015248 The surface of the workpiece is coated with plasma to maintain the workpiece at a specific temperature. The wafer temperature may be in a range between about 110 degrees Celsius and about 500 degrees Celsius. To reduce the possibility of photoresist bursting as described above, It is preferred to slowly increase the wafer temperature until sufficient hard shell has been removed and the photoresist burst is no longer an issue. The initial station temperature can range from about 110 degrees Celsius to about 200 degrees Celsius 'eg, about 1 8 degrees Celsius. The station can successfully use higher temperatures such as 285 degrees Celsius and about 350 degrees Celsius at good manufacturing rates. #Process Flowchart 3 is a process flow diagram showing various operations in accordance with certain embodiments of the present invention. Located on one of the wafer supports in the reaction chamber. At job 301 Introducing a hydrogen-containing gas to a plasma source. A plasma is generated from the gas in operation 3〇 3. As more gas is added to the plasma source, the electricity is flowed downstream and at operation 305 Introducing an inert gas mixture. Some of the charged materials in the plasma can be combined to form a neutral and activated substance. The activating material flows through a showerhead panel together with the inert gas and is operated at operation 3〇7 β A photoresist reaction on the surface of a wafer. The reaction produces volatile by-products. These by-products can be removed near the processing zone with a vacuum pump at job 309. The process can be repeated once using different process parameters. Or multiple times. For example, the wafer may be heated or cooled during the iteration of the process. In another example, different initial hydrogen-containing gas and inert gas composition and flow rate may be used. Preferably, the iterative At least one of them relates to a hydrogen-based gas comprising elemental hydrogen, carbon dioxide, and carbon tetrafluoride. One or more of the iterations may involve hydrogen containing no carbon dioxide or carbon tetrafluoride 136265.doc • 24-201015248 二实: The iterative generation can be designed to implant the 弁ρ agent in the same dose after the hard shell and bulk photoresist regions discussed above for the different portions-S-. The first peeling iteration in the first stripping station can be stripped Hard layer. The first peeling iteration may involve the use of elemental killing (or another weak oxidizing agent) (and carbon tetrafluoride (or another fluorine-containing gas) may be beneficial, this is a good The slurry specifically strips the hard shell layer. When the hard shell layer is sufficiently thin or the ruthenium is completely removed, a second peeling iteration can usually be stripped of the body photoresist under the threshold Β Residue and remaining hard shell θ I The first stripping process can be performed in a processing station different from the first stripping process. The second stripping process can be performed without using a weak oxidant or a gas-containing gas or both. Plasma. After removal of the bulk photoresist, a re-peel process using different gas compositions can be designed to strip the residue, if present. This residue stripping process can use a depleted gas to remove any oxidized implant material. The stripping iterations described above can be performed in any order or frequency, depending on the number of processing stations and the composition of the photoresist to be stripped. Those skilled in the art will be able to adapt the concepts discussed herein to strip thicker or thinner hard shells that have lower or higher resistance to stripping chemicals. Moreover, the concepts discussed herein are applicable to other situations where more than one photoresist layer having different characteristics is stripped by using different stripping chemistries for different photoresist layers. Example 1 In this example, 'to study the effect of carbon dioxide and carbon tetrafluoride on the residue. Use a 45 nm structure to pattern a 3 mm-thick wafer and use ρ+ 136265.doc -25· 201015248 LDD (lightly doped bungee) is ion implanted. The resulting high dose implanted photoresist is about 2000 angstroms thick and has a hard shell of about 63 angstroms thick. The wafer was stripped in a stripping chamber with 5 plasma stations. The plasma is produced at an RF power of 2 watts. The wafers were exposed to a plasma-activated reactive gas at each station for about 2 G seconds and exposed for a total of 97 seconds. The wafer support has a temperature of 350 degrees Celsius. The chamber pressure is _ milliTorr. The nitrogen flow rate is 6 - (standard state rise per minute) and the downstream argon flow rate is 14 slm. The CO2 flow rate varies between 0 and 150 seem (standard state cubic centimeters per minute). The flow rate of carbon tetrafluoride varies between 20 and 40 sccm. Note that these flow rates have the total flow rate of the entire chamber of the five plasma stations. Each station receives about 1/5 of the total flow rate. Figures 4A through 4D, continued to show SEM photographs of wafers before and after stripping of various reactive gases activated by plasma. Figure 4A shows a small portion of the wafer prior to stripping. Structure 401 is a post-high dose implanted photoresist. Pad 4〇5 contains structure 4〇3 where the photoresist is removed during the patterning process. Therefore, the ® HDIS process removes the structure 401. In the first wafer as depicted in Figure 4B, 20 seem of carbon tetrafluoride and 150 seem of carbon dioxide are added to the hydrogen to form a plasma "after the process, the worm-like residue 407 is left. In the second wafer as depicted in Figure 4C, 40 seem of carbon tetrafluoride and 150 seem of carbon dioxide are added to the hydrogen to form a plasma. This peeling did not produce any residue as shown in Figure 4C. In yet another wafer as depicted in Figure 4D, 40 seem of carbon tetrafluoride was added to the hydrogen and no carbon dioxide was added to form a plasma. The formed 136265.doc -26- 201015248 worm-like residue 407 was again observed. This result shows that the addition of carbon dioxide together with carbon tetrafluoride produces a residue-free film in the chlorine-based HDIS. Example 2 In this example, 'independent inspection: the effect of carbon oxide flow rate and carbon tetrafluoride flow rate #矽 loss. The measurement was carried out under the same process conditions as in Example i, and the carbon dioxide flow rate was 〇, 50, 100, and 150 3 _ when the carbon dioxide flow rate was maintained at 4 〇 scem. The results are plotted on the eve of the loss of the oxidant at a flow rate of 15 〇 seem and the most recent when no carbon monoxide is added, the presence of some carbon dioxide in the plasma reduces the enthalpy loss. The enthalpy loss of the carbon tetrafluoride flow rate at 111, 4 〇, 6 〇, 80, and 1003 "111 hrs 11 〇 18" was also measured under the same process conditions as in Example 1. The results are plotted in the graph. The enthalpy loss peaks at a flow rate of 4 四 to go seem. The results show that the enthalpy loss is affected by the flow rate of carbon dioxide and carbon tetrafluoride. Those skilled in the art will be able to design a Hdis process that minimizes the loss of the lithology and leaves no residue on the film. Example 3 In another example, studies relating to enthalpy loss and stripping residue were used at different stations. The effect of different gas compositions is the same as the process conditions of Example 1. In addition to the wafer support temperature of 250 ° C. In the first method, tetrafluoride is used in all stations at a total flow rate of 40 seem. Carbon. In a second process, carbon tetrafluoride is delivered only to RF stations 1 and 2 at a total flow rate of 20 seem (1 〇seem per station). Constant carbon dioxide flow rate is maintained at I36265.doc -27- 201015248 at 1 50 seem 〇 in these two In this case, no residue substrate was obtained after the HDIS process. The average enthalpy loss in the first process was 8 > 1 A per cycle, and the average lithography loss in the second process was 6.7 A, a decrease of about 17%. A cycle refers to the complete one-pass tool 'contains all stations' processing. This result shows that the sequential stripping process using different gas compositions can reduce the enthalpy loss while maintaining a residue-free substrate. Example 4 In this example, each study The short process time of the station and the influence of the lower carbon tetrafluoride flow rate. In the first method, no carbon tetrafluoride is added and the process time is 20 seconds per station. In the second method, four are added at a flow rate of 10 seem Fluorinated carbon, which has a peeling process time of 10 seconds per station. In both processes, the wafer support temperature is 285 degrees Celsius. In the first method, since there is no carbon tetrafluoride in the plasma, it is stripped. The residue was found to have an average enthalpy loss per cycle of 1.93 A. In the second process, the substrate had no residue and had an average enthalpy loss of 3.12 A per cycle due to a decrease in the flow rate of the carbon tetrafluoride and a reduced process. However, the first process has a lower enthalpy loss, but the substrate is not free of residue after stripping. This result shows that a reduced residue temperature of the carbon tetrafluoride and a shorter process time are used to produce a residue-free substrate. Example 5 In this example, carbon tetrafluoride was introduced into a plasma source at a different station. In the first method, 5 seem of carbon tetrafluoride was introduced into i. In the first process, 5 seem The tetrafluorocarbon was introduced into the rF station 3. The enthalpy loss was measured and averaged after the first cycle of the I36265.doc.28-201015248 and after the fifth cycle. The other process parameters were the same as those of the process example of Example 1. The first method produces a substrate without residue. The helium loss after the first cycle using carbon tetrafluoride was 14.4 A. The loss after the fifth cycle was 186 A. The average helium loss per cycle was reduced from 14.4 A to 3.7 A. A small amount of residue can be observed on the substrate after using the second method of HDIS. The helium loss after the first cycle is 6 9 A, which is less than the helium loss of the first method. The loss after the fifth cycle is 1〇 3 A. The average enthalpy loss per cycle was reduced from 6.9 angstroms to 2.1 angstroms. This result shows that the loss of enthalpy using this chemical is a self-limiting reaction in which a large sickle second loss occurs in the first cycle. Additional processing does not remove more. This may be advantageous over conventional oxygen and fluorine stripping chemists in which the total enthalpy loss is proportional to the processing time. In cases where excessive stripping must be performed (e. g., when the thickness of the photoresist is not uniform), the oxidant will result in more enthalpy loss than the disclosed hydrogen chemistry. This result also shows that the first cycle enthalpy loss is reduced without the use of carbon tetrafluoride. Those skilled in the art will be able to delay the introduction of carbon tetrafluoride to reduce total enthalpy loss. It should be noted that the experimental results of these specific examples are shown to illustrate and illustrate the efficiency of the method of the present invention and are not intended to limit the invention to any particular embodiment. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of an apparatus showing a method according to some embodiments of the claimed invention and adapted to practice the claimed invention. 136265.doc -29- 201015248 Figures 2A through 2D illustrate various stages of semiconductor fabrication before and after ion implantation and stripping operations. Figure 3 is a flow diagram showing the process of various jobs in accordance with some embodiments of the present invention. 4A to 4D are SEM photographs of the photoresist pattern peeled off before and after peeling under various conditions according to various embodiments of the present invention. Figure 5A is a enthalpy loss curve for an HDIS using various carbon dioxide flow rates in accordance with various embodiments of the present invention. • Figure 5B is a enthalpy loss curve for HDIS using various carbon tetrafluoride flow rates in accordance with various embodiments of the present invention. [Main component symbol description] 100 Equipment 101 Plasma source 103 Processing chamber 105 Sprinkler assembly 109 Sprinkler 111 Gas inlet 113 Inert gas inlet 115 Induction coil 117 Pressure plate 119 Catheter 121 Sprinkler hole 123 Wafer 201 Substrate 136265 .doc _ 30 - 201015248 203 204 205 207 209 401 403 405 φ 407 photoresist material open hard shell sidewall sputtering residue doped region structure structure pad residue
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