201014126 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種驅動電路，且特別是一種高壓側 驅動器。 【先前技術】 隨著科技的日新月異’電子產業蓬勃發展，功率轉換 器已經廣泛地運用在人們的日常生活中，像是電源供應 器、馬達驅動器等等，現今而言，許多功率轉換器採用高 塵侧驅動器來控制麵接到負載的電壓源。 請參照第1圖，其係繪示一種習知的高壓側驅動器的 等效電路圖。第1圖中，高壓側電晶體1〇耦接低壓侧電晶 體20。當高壓側電晶體10截止，且低壓側電晶體2〇導通 時’電容30可進行充電。然而，高壓側驅動器在高壓應用 中’由於切換所造成的損耗，造成能源的浪費。 因此，基於上述原因，需要一種新的高壓侧驅動電路， 適用於高壓應用而且不會造成能源的浪費。 【發明内容】 本發明之技術態樣是一種新的高壓側驅動電路，其可 有效地降低漏電流，不會造成能源的浪費》 依照本發明一實施例，一種高壓側驅動電路，包含靴 帶電容器、P通道金屬氧半導體、N通道金屬氧半導體以及 非重疊電路。靴帶電容器具有正端與負端，其中正端耦接 一電壓源，負端耦接高壓側電晶體的源極及低壓側電晶體 5 201014126 的汲極。1>通道金屬氧半導趙的源㈣脉帶電容器， 道金屬氧半導體的沒極叙接高壓侧電晶趙的閘極。N通道 金屬氧半導體的沒極輕接p通道金屬氧半導體的_，N 通道金屬氧半導體的源極耦接高壓侧電晶體的一源極。非 重叠電路，包含輸入端、第一輪出端以及第二輪出端。輪 入端可接收-訊號。第—輸出端可根據訊號，輸出一第— 驅動訊號至P通道金屬氧半導體的間極，其中第 ❹於一第一時間，輪出第一驅動訊號之前緣；且第—輪出端 於-第二時間，輸出第一驅動訊號之後緣。第二輸出端可 根據訊號，輸出一第二媒動訊號i N通道金屬氧半導趙的 閘其中第二輸出端於一第三時間，輸出第二驅動訊號 之則緣，且第二輸出端於一第四時間，輸出第二驅動訊號 之後緣。其中第一時間與第三時間相差一第一時間差第二 時間與第四時間相差一第二時間差。 藉此，由於P通道金屬氧半導韹與N通道金屬氧半導 • 體非同時切換導通/載止狀態’使得p通道金屬氧半導體的 汲極與N通道金屬氧半導體的汲極之間的漏電流相 小，而不會造能源的浪費。 依照本發明另一實施例，一種高壓側驅動電路，包含 靴帶電容器、P通道金屬氧半導體、N通道金屬氧半導體以 及非重疊電路。靴帶電容器具有正端與負$，其中正端耦 接一電壓源，負端耦接高壓側電晶體的源極及低壓側電晶 體的汲極《Ρ料金屬氧半導體的源極_轨帶電容器，曰曰p 通道金屬氧半導體的汲極耦接高壓侧電晶體的閘極》Ν通 道金屬氧半導體的沒極耦接ρ通道金屬氧半導體的没極，Ν 201014126 2金屬氧半導體的源極輕接高壓側電晶體的一源極。非 要電路，包含輸人端、重設端、第—㈣端以及第 m接:第一脈衝訊號。重設端可接收第二脈201014126 IX. Description of the Invention: [Technical Field] The present invention relates to a driving circuit, and more particularly to a high voltage side driver. [Prior Art] With the rapid development of technology, the power industry has been widely used in people's daily lives, such as power supplies, motor drives, etc. Today, many power converters are high. The dust side driver controls the voltage source that is connected to the load. Referring to Fig. 1, there is shown an equivalent circuit diagram of a conventional high side driver. In Fig. 1, the high side transistor 1 is coupled to the low voltage side transistor 20. When the high side transistor 10 is turned off and the low side transistor 2 is turned on, the capacitor 30 can be charged. However, high-voltage side drivers are a waste of energy due to losses caused by switching in high-voltage applications. Therefore, for the above reasons, a new high-voltage side driving circuit is required, which is suitable for high-voltage applications and does not cause waste of energy. SUMMARY OF THE INVENTION The technical aspect of the present invention is a new high-voltage side driving circuit, which can effectively reduce leakage current without causing waste of energy. According to an embodiment of the invention, a high-voltage side driving circuit includes a boot strap. Capacitors, P-channel metal oxide semiconductors, N-channel metal oxide semiconductors, and non-overlapping circuits. The shoe with a capacitor has a positive terminal and a negative terminal, wherein the positive terminal is coupled to a voltage source, and the negative terminal is coupled to the source of the high side transistor and the drain of the low side transistor 5 201014126. 1> channel metal oxygen semi-conducting Zhao source (four) pulse band capacitor, the channel metal oxygen semiconductor immersed in the high-voltage side of the gate Zhao. The N-channel metal oxide semiconductor is connected to the source of the high-voltage side transistor of the _, N-channel metal oxy-semiconductor. A non-overlapping circuit comprising an input, a first round of the output, and a second round of the output. The round input can receive the - signal. The first output terminal can output a first driving signal to the interpole of the P channel metal oxy-semiconductor according to the signal, wherein the first driving wheel turns out the leading edge of the first driving signal; and the first wheel end is at - The second time, the trailing edge of the first driving signal is output. The second output terminal outputs a second medium signal, the N-channel metal oxygen semiconductor, and the second output terminal outputs a second driving signal at a third time according to the signal, and the second output end At a fourth time, the trailing edge of the second driving signal is output. The first time is different from the third time by a first time difference, and the second time is different from the fourth time by a second time difference. Thereby, since the P-channel metal oxy-semiconductor and the N-channel metal oxy-semiconductor are not simultaneously switched between the on/off state, the b-channel metal oxy-semiconductor is interposed between the drain of the N-channel metal oxy-semiconductor and the drain of the N-channel metal oxy-semiconductor. The leakage current is small, and there is no waste of energy. In accordance with another embodiment of the present invention, a high side driver circuit includes a bootstrap capacitor, a P-channel metal oxide semiconductor, an N-channel metal oxide semiconductor, and a non-overlapping circuit. The shoe with a capacitor has a positive terminal and a negative $, wherein the positive terminal is coupled to a voltage source, and the negative terminal is coupled to the source of the high-voltage side transistor and the drain of the low-voltage side transistor to the source of the metal oxide semiconductor. The capacitor, the gate of the 曰曰p channel metal oxy-semiconductor is coupled to the gate of the high-voltage side transistor. The 没 channel metal oxy-semiconductor is not coupled to the ρ-channel metal oxy-semiconductor, Ν 201014126 2 source of metal oxy-semiconductor Lightly connect a source of the high voltage side transistor. The non-required circuit includes the input terminal, the reset terminal, the (-)th terminal, and the mth connection: the first pulse signal. The reset terminal can receive the second pulse
輸出-第-驅動訊號至p通道金屬氧半導通的閑極卞 、中第-輸出端根據第一脈衝訊號於—第一時間，輸出第 一驅動訊號之前緣H輸㈣根據第：脈衝訊號於一 第二時間’輸出第一驅動訊號之後緣。第二輸出端可根據 第-脈衝訊號與第二脈衝訊號’輸出_第二驅動訊號至N 通道金屬氧半導體的閘極，λ中第二輸出端根據第一脈衝 訊號於-第三時間，輸出第二驅動訊號之前緣；且第二輸 出端根據第二脈衝訊號於一第四時間，輸出第二驅動訊號 之後緣。其中第-時間與第三時間相差一第一時間差第二 時間與第四時間相差一第二時間差。 藉此，由於Ρ通道金屬氧半導體與^^通道金屬氧半導 體非同時切換導通/截止狀態，使得ρ通道金屬氧半導體的 及極與Ν通道金屬氧半導體的汲極之間的漏電流相當微 小’雨不會造能源的浪費。 本發明之技術態樣與現有技術相比具有明顯的優點和 有益效果。借由上述技術方案，本發明之技術態樣可達到 相當的技術進步性及實用性，並具有産業上的廣泛利用價 值’其具有省電之優點。 綜上所述’本發明之技術態樣之高壓側驅動電路，具 有省電的特點’並且可將此高壓侧驅動電路運用在適合的 技術環節。本發明之技術態樣具有上述諸多優點及實用價 201014126 值’在技術上有顯著的進步，並産生了好用及實用的效果。 以下將以實施例對上述之說明以及接下來的實施方式 做詳細的描述，並對本發明提供更進一步的解釋。 【實施方式】 為了使本發明之敘述更加詳盡與完備，可參照下列之 圖示及各種實施例，圖式中相同之號碼代表相同或相似之 元件。另一方面’眾所遇知的元件並未描述於實施例中， 以避免造成本發明不必要的限制。 請參照第2A圖’係緣示依照本發明一實施例的一種高 麼側媒動電路的等效電路圖。第2A圖中，高壓側驅動電路 (high side driver) 200可包含靴帶電容器220、P通道金 屬氧半導體230、N通道金屬氧半導體240以及非重疊電路 (non-overlap circuit )25〇。靴帶電容器22〇的兩端可分為 正端與負端，其中靴帶電容器22〇的正端耦接p通道金屬 氧半導體23G的源極，㈣電容器的負端麵接高壓側 電晶體270的源極及低壓側電晶體28〇的汲極邛通道金屬 氧半導趙230具有源極、汲極與閘極，其中p通道金屬氧 半導體230的源極耦接二極體21〇的陰極，且以道金屬 氧半導體230的没極麵接高_電晶鱧27〇的閘極。μ 道金屬氧半導體240具有源極、汲極與閘極，其中Ν通道 金屬氧半導體240的没極輕接ρ通道金屬氧半導鱧23〇的 沒極，且Ν通道金屬氧半導體⑽的源極純高壓侧電晶 體270的源極。非重疊電路25〇包含輸入端‘、第一輸出 端251與第一輸出端252’其中第一輸出端^耦接ρ通道 201014126 金屬氧半導11 230的_，第二輪出端252麵接N通道金 屬氧半導體240的閘極。 另外’高壓侧驅動電路200還可選擇性地配置二極體 210，其中二極體210具有陽極與陰極其中二極體21〇的 陽極耗接電壓源VB。於其他實施例中，高麼側驅動電路2〇〇 可移除二極體210 ’亦即電壓源％不透過二極體2ι〇輕接 至靴帶電容器220 » 請同時參照第2a—2B圖，其中第2B圖係繪示第2A 圖之高壓側驅動電路200的時序圖。以下將以實施例來具 體說明高壓側驅動電路200於使用上的實施方式。 於本實施例中，輸入端SlN可接收一訊號。第一輸出端 251可根據訊號’輸出第一驅動訊號至p通道金屬氧半導體 240的閘極，其中第一輸出端251於第一時間I輸出第一 驅動訊號之前緣；且第一輸出端251於第二時間I輸出第 一驅動訊號之後緣。第二輸出端252可根據訊號，輸出第 二驅動訊號至Ν通道金屬氧半導體23〇的閘極，其中第二 輸出端252於第三時間Τ'2輸出第二驅動訊號之前緣；且第 二輸出端252於第四時間，輸出第二驅動訊號之後緣。 值得注意的是，第一時間Tl與第三時間T4相差第一時 間差Δίν第二時間I與第四時間A相差第二時間差 第2Β圖中，上述之第—時間差ΔΤι例如可為約5別。 在約第一時間Tl時，p通道金屬氧半導體23〇切換至截止 狀態。在約第三時間I時，N通道金屬氧半導體24〇切換 至導通狀態，而高壓側電晶體270處於截止狀態β值得注 意的是，由於Ρ通道金屬氧半導體230與Ν通道金屬氧半 9 201014126 導體240非同步切換截止/導通狀態，使得p通道金屬氧半 導體230的汲極與N通道金屬氧半導艎24〇的汲極之間的 漏電流Ιι相當微小’而不會造能源的浪費。 第2B圖中，上述之第二時間差Λτ2例如可為約5ns。 在約第四時間A時，P通道金屬氧半導體230切換至導通 狀態；在約第二時間A時，Ν通道金屬氧半導體24〇切換 至截止狀態，而高壓側電晶體27〇處於導通狀態。值得注 意的是’由於Ρ通道金屬氧半導體23〇與Ν通道金屬氧半 導體240非同時切換導通/截止狀態，使得ρ通道金屬氧半 導體230的汲極與Ν通道金屬氧半導體240的汲極之間的 漏電流I2相當微小’而不會造能源的浪費。 另外’若咼壓側電晶體270截止且低壓側電晶體280 導通時’則電壓源VB對靴帶電容器220進行充電。 為了使本發明之敘述更加詳盡與完備，請參照第3圖， 係繪示依照本發明一實施例的一種非重疊電路250的等效 電路圖。第3圖中，非重疊電路250包含反及閘（NAND gate) 310、反或閘（NOR gate ) 320、以及多個反相器 330,340,350,360,370,380。值得注意的是，非重養電路250 係採用「先切後接」（break-before-make )之方式，可產生 兩個時序不同之方波訊號，其中反相器330,340, 350,360係 用以產生延遲時間。舉例來說，像是上述之第一時間差△ T〗與第二時間差^丁2，藉此防止ρ通道金屬氧半導體230 與Ν通道金屬氧半導體240同時進行切換。 請參照第4Α圖，係繪示依照本發明另一實施例的一種 高壓側驅動電路的等效電路圖。第4Α圖中，高壓側驅動電 201014126 路400可包含靴帶電容器22〇、P通道金屬氧半導體23〇、 N通道金屬氧半導體240以及非重疊電路250。靴帶電容器 220的兩端可分為正端與負端，其中靴帶電容器220的正端 耗接P通道金屬氡半導體230的源極，轨帶電容器220的 負端耦接高壓側電晶體270的源極及低壓側電晶體28〇的 汲極。P通道金屬氧半導體230具有源極、汲極與閘極，其 中P通道金屬氧半導體230的源極耦接二極體21〇的陰極， 且P通道金屬氧半導體230的汲極耦接高壓側電晶體27〇 的閘極。N通道金屬氧半導體24〇具有源極、汲極與閘極， 其中N通道金屬氧半導體24〇的汲極耦接p通道金屬氧半 導體230的汲極，且N通道金屬氧半導體24〇的源極耦接 尚壓側電晶體270的源極。非重疊電路250包含輸入端 Sin、重設端RIN、第一輸出端25 j與第二輸出端252,其中 第一輸出端251耦接P通道金屬氧半導體23〇的閘極，第 二輸出端252耦接N通道金屬氧半導髏24〇的閘極。 另外，高壓側驅動電路200還可選擇性地配置二極體 210,其中二極艎210具有陽極與陰極，其中二極體21〇的 陽極耦接電壓源Vb。於其他實施例中，高壓側驅動電路2〇〇 可移除二極髏210，亦即電壓源Vb不透過二極體21〇耦接 至靴帶電容器220 » 睛同時參照第4A — 4B圖，其中第4B圖係繪示高壓側 驅動電路400㈣序圖。卩下將以實施例纟具體說明高麼 側驅動電路400於使用上的實施方式。 於本實施例中，輸入端SlN可接收第一脈衝訊號。重設 端Rm可接收第二脈衝訊號。第一輸出端251可根據第一脈 201014126 衝訊號與第二脈衝訊號，輪 氧半導體加二 驅動訊號至？通道金屬 城於第聋閘極’其中第一輸出端251根據第-脈衝 =棱1出第一驅動訊號之前緣;且第-輸出 一脈衝訊號於第二時間T4輸出第一驅動訊號 之後緣。第二輸出端 5 訊號，輪出楚 了根據第-脈衝訊號與第二脈衝 極，其中第訊號至Ν通道金屬氧半導艘230的閉 τ2輸出第-㈣端252根據第一脈衝訊號，於第三時間 脈衝訊號之前緣；且第二輸出端攻根據第二 值得、主音時間T3 ’輸出第二驅動訊號之後緣。 間差ΔΤ :第：，第一時間Tl與第三時間I相差第-時 第4B圖:與第四時㈣相差第二時間差仏 在約第-時間T，：述之第一時間差心1例如可為約如。 狀態二二Η:道金屬氧半導趙23°切換至截止 至導通狀姨： N通道金屬氧半導趙240切換 二而高壓側電晶體27〇處於截止狀態。值得注 道金屬氧半導體230與"通道金屬氧半 導體230的、、及極Γ矣截止/導通狀態，使得Ρ通道金屬氧半 漏電流η相當微ΓΓΓ氧半導趙240的汲極之間的 微j、’而不會造能源的浪費。 第4B圓中，卜 在約第四時間了3時p第二時間差Μ例如可為約⑻。 狀態，·在約第二時門τ Τ金屬氧半導體230切換至導通 至截止狀態，而心;雷通道金屬氧半導體240切換 意的暑，由;^ S電“ ’處於導通狀態。值得注 波、 ；通道金屬氧半導體230與N通道金屬氧半 導…同時切換導通/截止狀態，使得 12 201014126 導體230的汲極與N通道金屬氧半導髖240的汲極之間的 漏電流I2相當微小，而不會造能源的浪費。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明’任何熟習此技藝者，在不脫離本發明之精神和範 圍内’當可作各種之更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 φ 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圏式之詳細說明如下： 第1圖係繪示一種習知的高壓側驅動器的等效電路圖。 第2A圖係繪示依照本發明一實施例的一種高壓側驅 動器的等效電路圖。 第2B圖係繪示第2A圖高壓側驅動器的時序圖》 第3圖係繪示依照本發明一實施例的一種非重疊電路 ® 的等效電路圖。 第4A圖係螬·示依照本發明另一實施例的一種高壓侧 驅動器的等效電路圖》 第4B圖係繪示第4A圖之高壓侧驅動電路400的時序 圖。 【主要元件符號說明】 1(> :高壓側電晶體 20 :低壓侧電晶體 30 :電容 200:高壓侧驅動電路 13 201014126 210 :二極體 230 : P通道金屬氧半導體 250 :非重疊電路 252 :第二輸出端 280 :低壓側電晶體 VB :電壓源 SIN :輸入端 220 :靴帶電容器 240: N通道金屬氧半導體 251 :第一輸出端 270 :高壓側電晶體 400 :高壓側驅動電路The output-first-drive signal to the p-channel metal oxygen semi-conducting idler and the first-output terminal are output according to the first pulse signal at the first time, and the first driving signal is output at the leading edge H (4) according to the first: pulse signal A second time 'outputs the trailing edge of the first driving signal. The second output terminal can output the second driving signal to the gate of the N-channel metal oxide semiconductor according to the first pulse signal and the second pulse signal, and the second output terminal of the λ is output according to the first pulse signal at the third time. a second driving signal leading edge; and the second output terminal outputs a second driving signal trailing edge according to the second pulse signal at a fourth time. The first time and the third time are different from each other by a first time difference, and the second time is different from the fourth time by a second time difference. Therefore, since the germanium channel metal oxy-semiconductor and the metal channel oxygen semiconductor are not simultaneously switched on/off state, the leakage current between the p-channel metal-oxygen semiconductor and the drain of the germanium channel metal-oxygen semiconductor is relatively small. Rain does not waste energy. The technical aspect of the present invention has significant advantages and advantageous effects as compared with the prior art. With the above technical solution, the technical aspect of the present invention can achieve considerable technological advancement and practicability, and has an industrial wide-ranging value, which has the advantage of power saving. As described above, the high-voltage side driving circuit of the technical aspect of the present invention has the characteristics of power saving, and the high-voltage side driving circuit can be applied to an appropriate technical link. The technical aspect of the present invention has the above-mentioned many advantages and practical price 201014126 value's technically significant progress, and has produced useful and practical effects. The above description and the following embodiments will be described in detail below with reference to the embodiments, and further explanation of the invention. DETAILED DESCRIPTION OF THE INVENTION In order to make the description of the present invention more complete and complete, reference is made to the accompanying drawings and the embodiments. On the other hand, the elements that are known are not described in the embodiments to avoid unnecessarily limiting the invention. Referring to Figure 2A, there is shown an equivalent circuit diagram of a high side media circuit in accordance with an embodiment of the present invention. In Fig. 2A, the high side driver 200 may include a shoe band capacitor 220, a P channel metal oxide semiconductor 230, an N channel metal oxygen semiconductor 240, and a non-overlap circuit 25 〇. The two ends of the shoe with capacitor 22 可 can be divided into a positive end and a negative end, wherein the positive end of the shoe with capacitor 22 耦 is coupled to the source of the p-channel metal oxy-semiconductor 23G, and (4) the negative end of the capacitor is connected to the high-voltage side transistor 270 The source and the low-voltage side transistor 28〇 of the drain-channel metal oxy-transconductor 230 have a source, a drain and a gate, wherein the source of the p-channel metal oxy-semiconductor 230 is coupled to the cathode of the diode 21〇 And the gate of the MOS transistor 230 is connected to the gate of the high-voltage transistor 27〇. The channel metal oxy-semiconductor 240 has a source, a drain and a gate, wherein the Ν channel metal oxy-semiconductor 240 has a immersed ρ channel metal oxy-transconductor 23 〇, and the source of the germanium channel metal oxy-semiconductor (10) The source of the ultrapure high voltage side transistor 270. The non-overlapping circuit 25A includes an input end ′, a first output end 251 and a first output end 252 ′, wherein the first output end is coupled to the _ channel 201014126 metal oxygen semiconductor 11 230 _, and the second round end 252 is connected The gate of the N-channel metal oxy-semiconductor 240. Further, the high voltage side driving circuit 200 can also selectively configure the diode 210, wherein the diode 210 has an anode and a cathode of the cathode 21 〇 of the anode consuming voltage source VB. In other embodiments, the high side driver circuit 2 〇〇 can remove the diode 210 ′, that is, the voltage source % is not transmitted through the diode 2 〇 〇 to the shoe capacitor 220 » Please refer to the 2a-2B 2B is a timing chart showing the high side drive circuit 200 of FIG. 2A. Hereinafter, an embodiment in which the high-voltage side driving circuit 200 is used will be specifically described by way of embodiments. In this embodiment, the input terminal S1N can receive a signal. The first output end 251 can output the first driving signal to the gate of the p-channel metal-oxygen semiconductor 240 according to the signal ', wherein the first output end 251 outputs the leading edge of the first driving signal at the first time I; and the first output end 251 At the second time I outputs the trailing edge of the first driving signal. The second output terminal 252 can output a second driving signal to the gate of the channel metal oxy-semiconductor 23 根据 according to the signal, wherein the second output terminal 252 outputs the second driving signal leading edge at the third time Τ '2; and the second The output terminal 252 outputs the trailing edge of the second driving signal at the fourth time. It is to be noted that the first time T1 differs from the third time T4 by the first time difference Δίν, the second time I differs from the fourth time A by a second time difference. In the second figure, the first time difference ΔΤι may be, for example, about five. At about the first time T1, the p-channel metal oxy-semiconductor 23 〇 switches to the off state. At about the third time I, the N-channel metal oxide semiconductor 24 is switched to the on state, and the high side transistor 270 is in the off state. Note that the germanium channel metal oxide semiconductor 230 and the germanium channel metal oxygen half 9 201014126 The conductor 240 switches the off/on state asynchronously, so that the leakage current between the drain of the p-channel metal oxy-semiconductor 230 and the drain of the N-channel metal oxy-halide 艎24〇 is relatively small, and there is no waste of energy. In Fig. 2B, the second time difference Λτ2 described above may be, for example, about 5 ns. At about the fourth time A, the P-channel metal oxy-semiconductor 230 is switched to the on state; at about the second time A, the erbium channel MOS 24 〇 is switched to the off state, and the high side transistor 27 〇 is in the on state. It is worth noting that 'due to the non-simultaneous switching on/off state of the germanium channel metal oxy-semiconductor 23 〇 and the germanium channel metal oxy-semiconductor 240, the drain of the p-channel metal oxy-semiconductor 230 and the drain of the germanium channel metal-oxide semiconductor 240 are The leakage current I2 is quite small' without wasting energy. Further, when the pressing side transistor 270 is turned off and the low side transistor 280 is turned on, the voltage source VB charges the shoe capacitor 220. In order to make the description of the present invention more detailed and complete, please refer to FIG. 3, which is an equivalent circuit diagram of a non-overlapping circuit 250 in accordance with an embodiment of the present invention. In FIG. 3, the non-overlapping circuit 250 includes a NAND gate 310, a NOR gate 320, and a plurality of inverters 330, 340, 350, 360, 370, 380. It is worth noting that the non-re-nuclear circuit 250 uses a "break-before-make" method to generate two square-wave signals with different timings, in which inverters 330, 340, 350, 360 are used to generate delay. For example, the first time difference ΔT and the second time difference are as described above, thereby preventing the p-channel metal oxy-semiconductor 230 from switching simultaneously with the germanium channel metal-oxygen semiconductor 240. Referring to Figure 4, there is shown an equivalent circuit diagram of a high side drive circuit in accordance with another embodiment of the present invention. In the fourth diagram, the high side drive power 201014126 way 400 may include a shoe strap capacitor 22A, a P channel metal oxide semiconductor 23A, an N channel metal oxygen semiconductor 240, and a non-overlapping circuit 250. The two ends of the shoe with capacitor 220 can be divided into a positive end and a negative end, wherein the positive end of the shoe strip capacitor 220 consumes the source of the P-channel metal-iridium semiconductor 230, and the negative end of the rail-band capacitor 220 is coupled to the high-voltage side transistor 270. The source and the low-voltage side of the transistor are 28 〇. The P-channel metal oxy-semiconductor 230 has a source, a drain and a gate, wherein a source of the P-channel MOS 230 is coupled to a cathode of the diode 21 ,, and a drain of the P-channel MOS 230 is coupled to the high-voltage side. The gate of the transistor 27〇. The N-channel metal oxy-oxide semiconductor has a source, a drain and a gate, wherein a drain of the N-channel metal oxide semiconductor 24 耦 is coupled to a drain of the p-channel metal oxy-semiconductor 230, and a source of the N-channel metal oxide semiconductor 24 〇 The pole is coupled to the source of the voltage-side transistor 270. The non-overlapping circuit 250 includes an input terminal Sin, a reset terminal RIN, a first output terminal 25 j and a second output terminal 252 , wherein the first output terminal 251 is coupled to the gate of the P-channel metal oxide semiconductor 23 , and the second output terminal 252 is coupled to the gate of the N-channel metal oxygen semiconductor 髅24〇. In addition, the high side driving circuit 200 can also selectively configure the diode 210, wherein the diode 210 has an anode and a cathode, wherein the anode of the diode 21 is coupled to the voltage source Vb. In other embodiments, the high-voltage side driving circuit 2 〇〇 can remove the two-pole 髅 210, that is, the voltage source Vb is not coupled to the shoe-capacitor 220 through the diode 21 ». 4B is a sequence diagram showing the high-voltage side driving circuit 400 (four). The embodiment of the high side drive circuit 400 in use will be specifically described by way of example. In this embodiment, the input terminal S1N can receive the first pulse signal. The reset terminal Rm can receive the second pulse signal. The first output end 251 can be based on the first pulse 201014126 and the second pulse signal, and the oxygen semiconductor plus the second drive signal to the ? The first metal output terminal 251 outputs a first driving signal leading edge according to the first pulse rim 1; and the first output pulse signal outputs a first driving signal trailing edge at the second time T4. The second output terminal 5 signal is rotated according to the first pulse signal and the second pulse pole, wherein the first signal of the first signal to the closed channel τ2 of the metal channel half-conductor 230 is based on the first pulse signal. The third time pulse signal leading edge; and the second output end attack according to the second value, the lead time T3 'outputs the trailing edge of the second driving signal. The difference ΔΤ: the first time, the first time T1 is different from the third time I, the first time, the fourth time BB: the fourth time (four), the second time difference 仏 at about the first time T, the first time difference 1 Can be about. State two or two: the metal oxygen semi-conductor Zhao 23 ° switch to cut-off to conduction state: N channel metal oxygen semiconductor guide 240 switch two and the high-voltage side transistor 27 〇 is off. It is worthwhile to note that the metal oxide semiconductor 230 and the "channel metal oxide semiconductor 230", and the extreme turn-off / conduction state, so that the germanium channel metal oxygen half leakage current η is equivalent to the micro-oxygen semi-conductive Zhao 240 between the drain Micro j, 'and not waste of energy. In the 4th circle, the second time difference p at about 3 o'clock in the fourth time may be, for example, about (8). State, · at about the second time gate τ Τ metal oxy-semiconductor 230 is switched to conduct to the off state, and the heart; the lightning channel metal oxy-semiconductor 240 switches the meaning of the heat, by ^ S electric "' is in a conducting state. The channel metal oxy-semiconductor 230 and the N-channel metal oxy-semiconductor ... simultaneously switch the on/off state, so that the leakage current I2 between the drain of the 12 201014126 conductor 230 and the drain of the N-channel metal oxygen semiconductor hip guide 240 is relatively small. There is no waste of energy. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention to those skilled in the art, and it can be used in various ways without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the appended claims. [Comparative description of the drawings] φ is to make the above and other objects, features, advantages and embodiments of the present invention more obvious. The following is a detailed circuit diagram of a conventional high-voltage side driver. FIG. 2A is a high diagram of an embodiment of the present invention. The equivalent circuit diagram of the side driver. Fig. 2B is a timing diagram of the high side driver of Fig. 2A. Fig. 3 is an equivalent circuit diagram of a non-overlapping circuit® according to an embodiment of the present invention.等效· shows an equivalent circuit diagram of a high-voltage side driver according to another embodiment of the present invention. FIG. 4B is a timing chart of the high-voltage side driving circuit 400 of FIG. 4A. [Description of main component symbols] 1 (> High-voltage side transistor 20: low-voltage side transistor 30: capacitor 200: high-voltage side driver circuit 13 201014126 210: diode 230: P-channel metal-oxygen semiconductor 250: non-overlapping circuit 252: second output terminal 280: low-voltage side transistor VB: voltage source SIN: input terminal 220: shoe belt capacitor 240: N-channel metal oxygen semiconductor 251: first output terminal 270: high-voltage side transistor 400: high-voltage side driving circuit
Rin :重設端Rin: reset end
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