201003963 九、發明說明： 【發明所屬之技術領域】 【先前技術】 發光二極體(light-emitting diode，LED)的發光原理是利用電子 在η型轉體與p型轉體_動雜量差，以光的形式將能量 釋放，這樣的發光原理财顺自熾燈發熱的發絲理，因此發 光二極體被稱為冷光源。此外，發光二極體具有高耐久性、壽命 長、輕巧、耗電量低等優點，因此現今的照明市場 體寄予厚望，將其視為新一代的照明工具。 、 1知之發光一極體結構係於一基板上形成一半導體蟲晶結 構其中半導體遙晶結構之蠢晶品質對於發光二極體之内部發光 =率有決定性的影響；然而於形成磊晶結構過程中，基板之晶格 常數(lattice constant)是否能與形成磊晶結構之材質匹配是影響磊 晶品質之主要因素，也因此發光二極體的基板材質選用上，受到 很多的限制。 然而，為了增加發光二極體光摘出效率與散熱效果，發光二極 體置換基板的技術也陸續出現，第1A圖至第1〇圖為習知置換發 光一極體基板技術流程示意圖，首先如第1A圖所示提供一成長基 板10，並如第1B圖所示提供一磊晶結構12 ;接著如第1C圖所二 提供一基板14,並且於基板μ上形成一黏接層16，如第1D圖所 不；之後，反轉第1B圖所示之結構，將磊晶結構12藉由黏接層 16壓合固定於基板14上，如第1E圖所示，其中黏接層16係選 201003963 =====與獅琐謂)所構成材 移1 或金屬材料。隨後，再如第1F圖所示， 1〇〇、。、土反以仔到如第1G圖所示之習知發光二極體結構 【發明内容】 佈植文離子 率呈板表面之折射率，使磊晶結構與基板間之折射 羊太式布，以減少全反射(T〇talIntemal Reflection，TIR)。 目的係在於提供—發光二極體製造方法，利用陽 極接& (^iod1C Bonding)之方法接合蟲晶結構與基板。 下藉纟具體纽恤合所_®插加制，技容易瞭解 本發明之目的、技術内容、特點及其所達成之功效。 【實施方式】 以下配合圖式說明本發明之實施例。 »第2A圖至第2H圖為本發明實施例之製造流程示意圖；首先， 如第2A圖所示，提供一第一基板3〇，再如第2B圖所示，以有機 金屬化學氣相沈積法(Metal Organic Chemical Vapor Deposition, MOCVD)形成發光疊層32’其中發光疊層32由上而下至少包含第 一‘電型半導體層320、發光層322，以及第二導電型半導體層 324 ’並且發光疊層32之材質可以是珅化紹鎵(GaA1As)、礙化銘 銦鎵(AlGalnP)、磷化鎵(GaP)或氮化鎵(GaN)系列之半導體材料， 而第一基板30之材質則選自於與發光疊層32材質之晶格常數相 匹配之材料’諸如藍寶石(sapphire)、碳化矽(si〇或砷化鎵(GaAs) 等；本實施例係以氮化鎵系列材料發光疊層以及材質為碳化矽之 第一基板為例進行說明。 接著，如第2C圖所示，利用電漿辅助化學氣相沈積 (Plasma-enhanced Chemical Vapor Deposition，PECVD)形成一石夕薄 201003963 膜34於發光疊層32上，其中此石夕薄膜％又以非晶石夕(麵响祕 silicon)為佳，其厚度約為2〇〇nm。 #再如第β2D圖所示，提供一第二基板％，其中第二基板％之 ^質可以是Μ寶石(sapphire)或氧化鋅(Ζη〇)等氧化物，於本實施例 中，以藍寶石基板為例進行說明，利用離子佈植技術(i〇n ^^〇η)將麟子由第二基板36上表面向第二基板36内部進 ϊϋΓίΐ，子佈植層％ ’其中於此離子佈植層38中鈉離 子反中之氧離子結合以形成氧化納分子叫〇)。 結構1it’:子第佈2c圖之結構，並將第2c圖之 佈層上，使矽_4與離子佈植層38相接觸， 與㈣膜34之間提供—電壓，其中於此 紐大小約為5〇〇至謂 Ϊ’由㈣位高低之差異 -與石夕薄於離子佈植層 與第二基板36 . ί成.之黏結層41以接合發光疊層32 (Si〇2)。 於本實知例中，氧化層40之材質係為二氧化石夕 一接著，如第2F圖所示，移除第一基 微·刻技_刻部分之 1圖所 +導體層320裸露為丨卜.^么且層，直至第一導電型 -導電型半導體#^2〇 ^後’ ^弟2H圖所示，分別於裸露之第201003963 IX. Description of the invention: [Technical field of the invention] [Prior Art] The principle of light-emitting diode (LED) is to use electrons in the n-type swivel and the p-type swivel The energy is released in the form of light. The principle of such illumination is the hairline of the heat generated by the incandescent lamp, so the light-emitting diode is called a cold light source. In addition, the light-emitting diode has the advantages of high durability, long life, light weight, low power consumption, etc., so the current lighting market has high hopes and regards it as a new generation of lighting tools. 1. Knowing that the light-emitting one-pole structure forms a semiconductor crystal structure on a substrate, wherein the stray crystal quality of the semiconductor crystal structure has a decisive influence on the internal light-emitting rate of the light-emitting diode; however, the process of forming the epitaxial structure Whether the lattice constant of the substrate can match the material forming the epitaxial structure is the main factor affecting the quality of the epitaxial crystal, and therefore the substrate material of the light-emitting diode is selected, which is subject to many restrictions. However, in order to increase the light extraction efficiency and heat dissipation effect of the light emitting diode, the technology of replacing the substrate by the light emitting diode has also appeared one after another. FIG. 1A to FIG. 1 are schematic diagrams showing the technical flow of the conventional replacement light emitting diode substrate, firstly, A growth substrate 10 is provided as shown in FIG. 1A, and an epitaxial structure 12 is provided as shown in FIG. 1B; then a substrate 14 is provided as shown in FIG. 1C, and an adhesion layer 16 is formed on the substrate μ, such as 1D, the structure shown in FIG. 1B is reversed, and the epitaxial structure 12 is press-bonded to the substrate 14 by the adhesive layer 16, as shown in FIG. 1E, wherein the adhesive layer 16 is The choice of 201003963 ===== with the lion is said to be a material shift 1 or metal material. Then, as shown in Figure 1F, 1〇〇. The soil is in the form of a conventional light-emitting diode structure as shown in Fig. 1G. [Inventive content] The ion rate of the implant is the refractive index of the surface of the plate, so that the refractive index between the epitaxial structure and the substrate is too large. To reduce total reflection (TIR). The object is to provide a method for fabricating a light-emitting diode, which is bonded to a substrate structure and a substrate by a method of galvanic connection & (^iod1C Bonding). It is easy to understand the purpose, technical content, characteristics and effects of the present invention by borrowing a specific GI _® insertion system. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. 2A to 2H are schematic views showing a manufacturing process of an embodiment of the present invention; first, as shown in FIG. 2A, a first substrate 3 is provided, and as shown in FIG. 2B, an organic metal chemical vapor deposition is performed. The method (Metal Organic Chemical Vapor Deposition, MOCVD) forms the light-emitting layer 32', wherein the light-emitting layer 32 includes at least the first 'electric-type semiconductor layer 320, the light-emitting layer 322, and the second conductive type semiconductor layer 324' from top to bottom and The material of the light-emitting layer 32 may be a semiconductor material of a GaA1As, an AlGalnP, a gallium phosphide (GaP) or a gallium nitride (GaN) series, and a material of the first substrate 30. Then selected from materials matching the lattice constant of the material of the light-emitting layer 32, such as sapphire, bismuth carbide or GaAs, etc. This embodiment is luminescent with a gallium nitride series material. The lamination and the first substrate made of tantalum carbide are described as an example. Next, as shown in FIG. 2C, a plasma-assisted chemical vapor deposition (PECVD) is used to form a thin film of 201003963 film 34. On the light-emitting laminate 32, wherein The thickness of the stone film is preferably Amorphous (the surface silicon), and the thickness thereof is about 2 〇〇 nm. # Further, as shown in the β2D picture, a second substrate % is provided, wherein the second substrate% The quality may be an oxide such as sapphire or zinc oxide. In this embodiment, a sapphire substrate is taken as an example, and the ion implantation technique (i〇n ^^〇η) is used. The sub-layers are moved from the upper surface of the second substrate 36 toward the inside of the second substrate 36, and the sub-layers % 'where the oxygen ions in the sodium ion counter in the ion implantation layer 38 combine to form a nano-molecule. Structure 1it': the structure of the sub-cloth 2c, and the layer of the 2c figure, the 矽_4 is in contact with the ion implantation layer 38, and the voltage is supplied between the (4) film 34, wherein the size is It is about 5 〇〇 to the difference between the height of the (four) bits and the thin layer 41 of the ion implant layer and the second substrate 36. The bonding layer 41 is bonded to the light-emitting layer 32 (Si〇2). In the present embodiment, the material of the oxide layer 40 is the same as the dioxide dioxide. As shown in FIG. 2F, the first base micro-etching technique is removed. The conductor layer 320 is exposed.丨 . ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^
-電極42 *第層電二f紅，型半導體層324上分別形成J f有氧氣的環境中對進行，以提高氧二^將第-基板36置於 遭度’其中較佳實施例係將第二基’刀離子佈植層38之 ，成離子佈植層38之步 ‘ 足之環境進行 更可將第二基板36置離子佈植層38後， 201003963 成更多的氧化齡子，其巾上述熱驅使之步驟之較 第二基板36置於氧氣充足之環境進行。 I她例係將 於本實施例中，發光疊層32之折射率約為3 4，藍寶石第二美 板36之折射率約為1.78，而經過納離子佈植之離子佈植声兕^ 折射率介於發光叠層32與藍寶石第二基板％之間，曰！ ^ 2.0 ’因此光線由發光疊層32發出後，經過離子佈植層3 ϋί板36後才離開發光二極體晶片勘，其光線路徑之ί射 率係為由大到小的漸進式改變，藉此可以減少光線之全 f i Re— TIR)，哺高發光二極體⑼細之光摘出效 圖第如Ϊ圖為ί發明f另一實施例之製造流程結構示意 於笛H ;不’提供一第二基板36 ’並且利用離子佈植技 ΐίϊΐ層 子佈植層5G在第二基板36表面之任-方向 i顯;之重徵，其中所謂規則可為定週期、= ^、或其組合；相較於此，所謂「不規 植層」係指離子佈植層5〇在第二基板36表面，其 於此‘ίϊ 一 ί向上無法顯現出可辨識之重複性特徵。此外， ΐϊί =子?植層50覆蓋第二基板36上表面面積之比 i中離為3跑6()%;此外，此離子佈植步 II子(Εί 並且關形化軒佈植層5G巾形成氧化 2c s 34 ^ 於圖形化離子佈^ 50第第―其基/反36相接觸’並且提供一電壓 於此步驟中電愿夫^奶或苐—基板36與矽薄膜34之間，其中， 圖形化離子佈植声雷500〜1200v ’並且石夕薄膜34之電位高於 離子佈植H氧曰2=位L由於電位高低之差異，使得圖形化 匕鈉为子之氧離子朝向矽薄膜34移動，並且於 201003963 圖形化離子佈植層50與矽薄膜34之接面形成氧化層52(〇xide layer)，藉由上述氧化層52與矽薄膜34形成一黏結層幻，以接合 發光:i層32與第一基板36 ’於本實施例中，氧化層&之材質係 為二氧化矽(Si〇2)。 曰 接著，如第3C圖所示，移除成長基板30 ;並且如第3D圖所 示，利用微影蝕刻技術蝕刻部分發光疊層32之表面亩 型半導體層320裸露為止。 # 最後，再如第3E圖所示，分別形成第一電極42盘當__ 44於第-導電型半導體層32(m及第二導電型半導體層、極 第2極f與第二電極44分別與第一導電型半導體層320 =7: 層324產生電性連接，以取得-發光二極 於上述實施例中，第二基板36之材f係域f石， =為1.78，而藍寶石第二基板36表面經過納離子佈植後 圖形化離子佈植層50之折射率約為18〜2 〇,兩者折射 叠層32所發出之光線於發光二極體晶片3GG中之全i射 機曰，藉此進一步地提高光摘出之效率。 叙實_健域明本發明之技·蚊_，1目 ΪΪΪ: Ϊ:巧Ϊΐ之人士能夠瞭解本發明之内容並=實施 之專利範圍，即大凡依本發明所揭示之精 斤作之均4姐或修飾，仍應涵蓋在本發明之專利範圍内。 【圖式簡單說明】 ^ ^ ΐ Γ圖係f知發光二極體之製造流程結構示意圖。 =^至2H圖為本發明實施例之製造流程結構示意圖。 m細反 η〜發光疊層 第一導電型半導體層122〜發光層 201003963 124〜第二導電型半導體層 16〜黏結層 20〜第二電極 32〜發光疊層 322〜發光層 34〜石夕薄膜 38〜離子佈植層 41〜黏結層 44〜第二電極 52〜氧化層 200〜發光二極體晶片 14〜第二基板 18〜第一電極 30〜第一基板 320〜第一導電型半導體層 324〜第二導電型半導體層 36〜第二基板 40〜氧化層 42〜第一電極 50〜離子佈植層 53〜黏結層 300〜發光二極體晶片 10- the electrode 42 * the first layer of electricity 2 f red, the type of semiconductor layer 324 is formed in the environment of J f with oxygen, respectively, to increase the oxygen to place the first substrate 36 in the degree of 'the preferred embodiment will After the second base 'knife ion implantation layer 38 is formed into the ion implantation layer 38', the second substrate 36 can be placed in the ion implantation layer 38, and 201003963 becomes more oxidized age, The above-described heat drive causes the second substrate 36 to be placed in an oxygen-rich environment. In the present embodiment, the refractive index of the luminescent slab 32 is about 3 4, and the refractive index of the sapphire second slab 36 is about 1.78, and the ion implantation of the nano-ion implants is refracted. The ratio is between the light-emitting laminate 32 and the sapphire second substrate, 曰! ^ 2.0 'Therefore, the light is emitted by the light-emitting layer 32, and after leaving the light-emitting diode chip 36 through the ion-distributing layer 3, the light path rate is gradually changed from large to small. Thereby, the full fi Re-TIR of the light can be reduced, and the light-emitting diode (9) is light-extracted. The figure is as shown in the figure. The manufacturing process structure of another embodiment is shown in the flute H; a second substrate 36' and using an ion implantation technique to align the layer of the layer 5G on the surface of the second substrate 36; wherein the rule can be a fixed period, = ^, or a combination thereof In contrast, the term "non-regular layer" means that the ion implantation layer 5 is on the surface of the second substrate 36, and it is incapable of exhibiting an identifiable repetitive characteristic. In addition, ΐϊί = sub-plant layer 50 covers the surface area ratio of the second substrate 36 in the ratio i is 3 runs 6 ()%; in addition, this ion implant step II sub-(Εί and Guanhuaxuan plant layer 5G The towel forms an oxidation 2c s 34 ^ in the patterned ion cloth ^ 50 - the base / reverse 36 phase contact ' and provides a voltage between the electric wishor or the substrate 36 and the tantalum film 34 in this step, Among them, the patterned ion implanted sound spur 500~1200v 'and the potential of the Shixi film 34 is higher than the ion implantation H 曰 2 = bit L due to the difference in potential, so that the patterned sodium hydride is the oxygen ion of the 矽The film 34 is moved, and an oxide layer 52 is formed on the interface between the patterned ion implantation layer 50 and the germanium film 34 at 201003963, and a bonding layer is formed by the oxide layer 52 and the germanium film 34 to bond light. : i layer 32 and first substrate 36 ' In this embodiment, the material of the oxide layer & is cerium oxide (Si 〇 2). Then, as shown in FIG. 3C, the growth substrate 30 is removed; As shown in FIG. 3D, the surface of the partial light-emitting layer 32 is etched by the lithography technique to expose the surface of the semiconductor layer 320 to Finally, as shown in FIG. 3E, the first electrode 42 is formed as a first-conductor type semiconductor layer 32 (m and the second conductive type semiconductor layer, the second second electrode f and the second electrode). 44 is electrically connected to the first conductive semiconductor layer 320 = 7: layer 324, respectively, to obtain a light-emitting diode. In the above embodiment, the material of the second substrate 36 is f-domain f = 1.78, and the sapphire The refractive index of the patterned ion implantation layer 50 after the surface of the second substrate 36 is nano-ion implanted is about 18~2 〇, and the light emitted by the refracting layer 32 is totally reflected in the LED chip 3GG. The machine is used to further improve the efficiency of light extraction. 叙实_健域明本发明技术·Mosquito _, 1目ΪΪΪ: Ϊ: A person skilled in the art can understand the content of the invention and = the scope of the patent to be implemented, That is, the average 4 sisters or modifications disclosed in the present invention should still be covered by the patent of the present invention. [Simple description of the drawing] ^ ^ ΐ Γ 系 知 知 knowing the manufacturing process of the light-emitting diode Schematic diagram of the structure. The structure of the ^^ to 2H is a schematic diagram of the manufacturing process of the embodiment of the present invention. Laminating the first conductive semiconductor layer 122 to the light emitting layer 201003963 124 to the second conductive semiconductor layer 16 to the bonding layer 20 to the second electrode 32 to the light emitting layer 322 to the light emitting layer 34 to the stone film 38 to the ion implant layer 41 to bonding layer 44 to second electrode 52 to oxide layer 200 to light emitting diode wafer 14 to second substrate 18 to first electrode 30 to first substrate 320 to first conductive type semiconductor layer 324 to second conductive type semiconductor Layer 36 to second substrate 40 to oxide layer 42 to first electrode 50 to ion implantation layer 53 to adhesion layer 300 to light emitting diode wafer 10