TW201003590A - Display device - Google Patents

Abstract

A display device includes a pixel unit wherein N (N=3) colors including R (red), G (green), and B (blue) are assigned to N pixels. Each of the N pixels includes a sampling transistor (Ms), a driving transistor (Md), a retention capacitor (Cs), and a light emitting element (organic light emitting diode (OLED)). Out of the N pixels, a pixel easy to be a dark point in a given color (e.g. B) or a pixel in a given color (e.g. G) which has the highest relative visibility is provided with two or more sets of pixel circuit elements, each including the driving transistor (Md), the retention capacitor (Cs), and the organic light emitting diode (OLED), while the pixels assigned with other colors are provided with less number of sets of pixel circuit elements.

Description

201003590 VI. Description of the Invention: [Technical Field] The present invention relates to a pixel unit for displaying ι colors by N pixels of three or more consecutive colors, and regularly arranging a plurality of pixel units to form a pixel column Display aggregation. In particular, the present invention relates to a display device for a pixel circuit which does not integrate a light-emitting element which emits light in a pixel and emits light, and which is self-illuminating. [Prior Art] There is a display device that uses a photovoltaic element whose redundancy is changed by the applied voltage and the current flowing in. A representative example of a photovoltaic element which changes in brightness by application of a voltage is a liquid aa display element, and a representative example of the photovoltaic element whose luminance changes by an inflow current is an organic electroluminescence (10) 沁 Ele Ctr um uminescence element. The organic electroluminescent element is generally referred to as 〇LE〇 (organic light-emitting diode). The difference is that the liquid crystal display element modulates the light modulation (i.e., non-self-luminous) elements of the light from the light source, and the 〇LED is a self-luminous element that emits light by itself. The OLED has a plurality of organic thin films which function as an organic hole transport layer and an organic light-emitting layer, between the lower electrode and the upper electrode. The film thickness varies depending on the wavelength of light emission, and it differs depending on the reason why it has a light-enhancing effect. However, in general, it is difficult to form a thin material because of an organic material. The OLED is a photovoltaic element that uses a phenomenon in which an electric field is applied to an organic thin film to emit light, and a color tone of a color is obtained by controlling a current value flowing into the 〇LED. Therefore, using the OLED as a display device for a photovoltaic element, each pixel 6 has a pixel electrode 136030.doc 201003590 including a driving transistor for controlling the amount of current of the OLED.

Various pixel circuits have been proposed, and the main conventional ones are four transistors (4T). One capacitor (1C) type, 4T · 2C type, 5T · 1C type, 3T · 1C type, and the like. All of these are to prevent deterioration of the quality due to variations in characteristics of the transistor formed from the TFT (Thin Film Transistor), and to control the driving current to be constant within the pixel circuit, thereby making the entire surface uniform (luminance) Uniformity) is raised as an end. In particular, when the OLED is connected to the power supply in the pixel circuit, the characteristic deviation of the driving transistor according to the data potential of the input image signal directly affects the luminescence brightness of the OLED. Therefore, it is necessary to perform the characteristics of the driving transistor, that is, the correction of the threshold voltage. Further, on the premise of correcting the threshold voltage, the drive capability component (generally referred to as the mobility ratio) such as the current drive capability of the drive transistor minus the threshold component of the threshold value is corrected. High consistency. The correction of the threshold voltage and the mobility of the driving transistor is described in detail in Patent Document 1. [Patent Document 1] JP-A-2006-215213 SUMMARY OF THE INVENTION However, when a photovoltaic element such as an OLED is manufactured, dust or the like is likely to adhere to the panel, and it is easy to cause an unlit defect such as an abnormal light emission on the panel. The display is 瑕疵. Such display 成为 is a hindrance factor in improving the display device yield, and hinders the cost reduction of the display device. In particular, the OLED system forms a multilayer film structure in which a plurality of organic thin films are deposited. 136030.doc 201003590 The organic film which adheres to the film forming apparatus and is easily peeled off tends to float in the processing chamber of the film forming apparatus to become dust, and thus the dust is formed. As a result, when the electrodes of the OLED are short-circuited with a certain resistance value, it is prone to an unlit defect that cannot be always emitted. Further, the case where an unlit defect occurs is generated depending on which color pixel in the pixel unit in which color display is performed, and the degree of recognition of the acne f is different. In other words, the more the color is recognized, the more the display quality is degraded due to pixel fatigue. "Buben "The moon has produced a display of pixels with a structure that suppresses eight influences in the case of unlit defects. 2〇〇7-3〇786im) o The patent has been dismissed (Japan's special wish = invention The problem to be solved is to propose a month condition in which an unlit defect is generated, which can suppress the increase of the pixel area more than the above-mentioned prior application, and == effectively suppress the influence of the unlit defect on the screen display. The display device according to one aspect of the present invention (first aspect) includes N pixels including a pair of /G (green) and B (blue) colors, and one color is assigned to one pixel of the mother. The pixels are formed early and are regularly arranged with a plurality of pixel arrays of a plurality of pixels. Spoon = the pixel array in each of the ν pixels constituting the aforementioned pixel unit::: 拙-like transistor, driving transistor, holding capacitor, and illuminating element::: Capacitor is coupled to the illuminating control section of the driving transistor '. Keep the data dust input through the aforementioned sampling transistor. I36030.doc 201003590 The light-emitting element and the front-end path are connected in series with the driving data according to the amount of driving current controlled by the driving, and the color determined by each pixel according to the driving transistor. The luminescence property is spontaneously in addition to the above-mentioned N vocal flesh, ^ „ ^..a 素in 'in the valley is the unlit defect and the relative visibility of the twilight or sputum is the most dynamic thunder -,, the special feature of the door The color pixels include the above-mentioned pixel circuits of the illuminating elements and the illuminating elements of the illuminating elements, and are arranged in a larger number than the image groups of other colors. There are two groups of J; the above. In the display device according to another aspect (second aspect) of the present invention, except for the feature of the h: two: state, and the light-emitting element is contained in the anode (four), the number of the right = the upper layer is contained. The material and the center of the thickness corresponding to the color of the illuminate are the specific two of the aforementioned unlit defects; =:: formed in the total film thickness of the volume "previously #他色二=:...the plural number of interesting months jk eight his pixels The aforementioned total film thickness is small. == ideally, in the pixel of the other color, in the range of the number of groups of the pixel circuit elements in the pixel of the color: the color, the thinner the total film thickness of the organic film is form). (^ ·" 'In addition to the above-described specific color system, the number of the above-mentioned groups is smaller than the above-described display of the first aspect of the present invention with respect to the other aspects (fourth aspect) of the present invention, and the aforementioned relative visibility is the highest month 'J green ( G), the green (G) of each of the above-mentioned R (red) and the above-mentioned B (blue) is small. The display device of the other aspect (fifth aspect) of the present invention is 136030.doc 201003590 In the case where a plurality of the above-described groups are present in the plurality of pixels, one of the sampling transistors is provided in common with the plurality of arrays. The display device according to another aspect (sixth aspect) of the present invention is not limited to the first aspect described above, and In all of the foregoing groups of the N pixels, the channel conductivity type and size of the driving transistor and the capacitance value of the holding capacitor are respectively designed in the same manner, and a plurality of the light emitting elements are provided in the same pixel. Each of the light-emitting elements is separated by a plurality of parallel connection of the drive current paths of the plurality of light-emitting elements to a supply terminal of a drive voltage. In the display device of the other aspect (seventh aspect), in addition to the above-mentioned: =: and the pixel of the specific color, the total area of the aperture portions provided with the light-emitting elements of the front side is compared with the square pixels described above. Preferably, the area of the aperture portion is substantially equal to the area, and the pixel area of the specific color is more preferable than the pixel of the other color. Between the pixels of the other colors, the aperture unit of each pixel is determined to be , the pixel area is different ("shape (a). The material is substantially the same according to the above structure, in the _ pixel t I prime early in the color display, the drive transistor, the aforementioned protection = fixed color The pixel 'includes a group of anterior elements than other colors; Γ and the pixels of the other illuminating elements are electrically connected. The number of the above-mentioned pixels of the pixel is large, and two sets of pixels with h colors are provided. Image of bright defect i36030.doc 201003590 Prime, multi-sound pixels of light-emitting elements such as blue (B). Or, "Pixels of a specific color: refers to the pixel with the thinnest green (G) === visibility. Li Shang’s case for the sake of mention Easy-to-understand, for example, a pixel list of three pixel structures (10) Here, a group of the above-mentioned pixel circuit elements of R, G, and B, and two sets of pixels in the complex I: in the blue (8). In the above example, the number of pixels is set to four. In the case of the pixel unit, four are provided. If four light-emitting % are generated and the UtM is bright, the same area is the same, and then one un-point becomes an un-defective defect. The same is 1/4. However, under the premise that the average of the bristles is equal, in the 1 (9) other color (R, G) aperture surface acoustic ship Ή () aperture part more than one part, in a specific color () The probability of becoming a defect-free defect is twice that of other colors. Two Bu: Observe the color in the pixel of a specific color (Β): outside (r, G): When trapped, the color (R, G) ) All do not shine. However, since the two color elements are provided with the two color elements, even if the light is half of the light due to the other one, the light itself is the color (B). σ σ 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 As long as the color becomes the probability of unlit defects, any color is homogeneous 5 and. Similarly, in the case of the specific color (8), even if one light-emitting element becomes an unlit defect due to dust or the like, since the other light-emitting elements emit light, it is possible to avoid the worst case where the xenon light emission is not performed at all. 136030.doc 201003590 Assuming that the number of groups of a specific color is three or more, the more the number of groups, the more the light-emitting element can be suppressed from being emitted due to dust or the like. In other words, when the number of groups is 3, the luminance becomes 2/3', and the luminance is 1/2, which reduces the influence of the unlit defect. Similarly, when the number of groups is 4 or more, the brightness is Μ, 4/5, 5/6, ... the more the number of groups, the less the influence of the unlit defects. However, when a plurality of aperture portions of a plurality of light-emitting elements are arranged in pixels of the same area, since the area of the apertures is relatively small, the brightness of the initial setting (the brightness without the defect of the unlit) is also ρ♦. In general, the pixel area in which the number of groups is increased as the number of groups is increased is also increased. Thus, in general, the number of colors of the shirts is increased by increasing the pixel area and suppressing the influence of the occurrence of unlit defects (the degree of brightness reduction). When the present invention is applied in the following conditions, the number of sets of the respective colors is not uniform, and the above-mentioned trade-off is alleviated by the fact that it is easy to become an unlit defect or a more specific color set with higher visibility. u According to the present invention, it is possible to propose a structure of a pixel circuit which suppresses an increase in the pixel area by the above-mentioned trade-off, and can more effectively suppress the influence of unlit defects on the written description. [Embodiment] In the case where the present invention is applied to an organic EL display, an embodiment of the present invention will be described with reference to the drawings. <Overall Structure> The main structure of the organic rainbow display according to the embodiment of the present invention is shown in the wide area. 136030.doc 201003590 Electric ^: The machine wide 7^1 contains: a plurality of pixels, a matrix of pixels 2, and a driving circuit for driving the pixel array 2 are arranged in a matrix. The driving circuit includes: a vertical driving circuit (V scanner (V Sean called) 4, a disk horizontal driving circuit (H Scanner): H_Scan) s. The V scanner 4 is designed by the structure of the pixel circuit 3. Here, the v-scanner 4 includes a horizontal pixel line drive circuit (DSCN) 41 and a write-to-m scan circuit (WSCN) 42. ''. The symbol of the pixel circuit shown in FIG. L indicates that the pixel circuit has the address i (division, 2) in the vertical direction (longitudinal direction) and the address J (the corpse 1, 2, 3) in the horizontal direction (horizontal direction). The maximum value is an integer of 1 or more of "n" and "," Here, for the sake of simplification of the figure, the case where n = 2 and m = 3 is displayed. The address is described in the following description and the drawing. The same applies to the components of the pixel circuit, the signal, the signal line, and the voltage. The pixel circuit 3 (1, υ, 3 (2, υ is connected to the common vertical direction signal line SIG (1). Similarly , the pixel circuits 3 (1, 2), 3 (2, 2) are connected to the common vertical direction second signal line SIG (2), and the pixel circuits 3 (丨, 3), 3 (2, 3) are connected. The third signal line SIG(3) in the vertical direction is shared. The pixel circuits 3 (1, υ, 3(1, 2) and 3(1, 3) of the first column are horizontally available by sharing the scanning signal line' The pixel line driving circuit 4 丨 applies the first scanning gas number VSCAN1(1). Similarly, the pixel circuits 3 (2, u 2) and 3 (2, 3) of the second column are available from the common scanning signal line. The horizontal pixel line driving circuit 41 applies the first scanning signal vsc AN 1(2). Further, the pixel circuits 3 (1, 丨), 3 (1, 2), and 3 of the first column (1, W by 136030.doc • 10· 201003590 Other scan signal lines shared, the second scan signal VSCAN2(1) can be applied from the write signal scanning circuit 42. Similarly, the pixel circuits 3 (2, 1), 3 (2, 2) of the second column And 3(2,3), by sharing the other scan signal lines, the second scan signal VSCAN2(2) can be applied from the write signal scanning circuit 42. <Pixel Circuit 1> Figure 2 shows the drive transistor by PMOS The most basic structure of the pixel circuit 3(i,j) in the case of the transistor structure. The illustrated pixel circuit 3(i, j) is a circuit for controlling the organic light emitting diode OLED as a light emitting element. In addition to the light-emitting diode OLED, a driving transistor Md composed of a PMOS type TFT, a sampling transistor Ms composed of an NMOS type TFT, and a holding capacitor Cs are included. The organic light emitting diode OLED includes On the substrate made of transparent glass or the like, a laminate in which a first electrode (anode electrode), a hole transport layer, a light-emitting layer, an electron transport layer, an electron implant layer, and the like are sequentially deposited to form an organic film is formed. Further, a structure of the second electrode (cathode electrode) was formed on the laminate, but it was not particularly shown. The anode electrode is connected to the first power source on the positive side, and the cathode electrode is connected to the second power source on the negative side. Alternatively, the second power source may be a power source on the positive side, and the first power source is a power source on the negative side. In this case, the anode electrode is connected to the second power source, and the cathode electrode is connected to the first power source. Further, Fig. 2 shows a case where the anode of the organic light emitting diode OLED receives a supply of a high potential Vcc_? from the first power source on the positive side, and the cathode of the organic light emitting diode OLED is connected to a reference voltage such as a ground voltage GND. Applying the finger between the anode and cathode of the organic light-emitting diode OLED 136030.doc • 11 - 201003590 When the potential is repeated, the groove and the % hole are recombined in the light-emitting layer " 'organic light-emitting diode OLED By appropriately selecting the organic material constituting the organic film, it is possible to illuminate each of the colors of red (8), green (9), and blue (B), thereby soaking the organic cock... /organic material# If r, G, and illuminate can be arranged in the pixels of each column, color display can be performed. Material, and the color of the color is used. The difference between the use of white illuminating organic _ 仃 R, G, B. In addition to R, G, and B, a four-color structure of w (white) may be added. : electro-dynamic crystal _ as the current amount of the control human light-emitting element (organic; -), according to the (four) color tone control mechanism = month 匕 ° drive transistor Md source is far from the ancient currency / (four) connected to The south potential Vcc-Η supply line, the drain is connected to the anode of the organic light-emitting diode. The sampling transistor Ms is connected between the gates of the 4-bit Vsig (the line like DTL(1)) and the gate of the driving transistor (4). The source and the bungee of the sampled solar celestial body M s are connected to the driving transistor Md. The other party is connected to the image signal ηττ , ·, ^ ηττ , and Λ 5 tiger line DTL (J). On the image signal line 2, the data potential W is applied from the Η scanner 5. Sampling the transistor · 2: Appropriate timing during the application of the Becco potential, the sampling must be poor at the level of the pixel circuit. This is to exclude the influence of the display image during the transition of the level unstable transition at the forefront or the rear of the data pulse of the desired ^ potential Vsig to be sampled. • The capacitor Cs is held between the supply line of the driving potential Vec-H and the gate of the driving transistor Md. The movement of the capacitor Cs will be described later. 136030.doc 201003590 FIG. 2 omits the structure controlled by the horizontal pixel line driving circuit of FIG. The structure may also be other electro-crystals between the supply line connected to the high-center Vee H of FIG. 2 and the driving transistor _ - a certain period of time is applied to the specified time to apply high power: 2: These structures are driven Scanning is set, because the drive sweep: various ways, so it is omitted in Figure 2. <Pixel Circuit 2> The most basic structure of the driving transistor circuit 3W) is shown in FIG. The blood pixel circuit 3 (i, 』) in the case where the S electrode body is configured has the same structure except that the channel conductivity type NM of the transistor (10) is driven. The driving transistor Md is in the case of the S transistor structure, since a large driving unit can be formed in a unit type and can form all the transistors in the pixel circuit, so that the process can be simplified. In addition 'pixel circuit! And the pixel circuit 2 is formed by T-shaped all of the electric crystals in the pixel circuit. The thin film semiconductor layer forming the channel of the TFT is composed of a polycrystalline stone (P〇iys mountain c〇ne) or an amorphous stone material (a coffee material such as a coffee _ milk s.) However, since the characteristic deviation is large, it is not suitable for the large-scale display of the display device. Therefore, the display device including the large-faced surface generally uses an amorphous germanium TFT. However, since the amorphous stone-etched TFT has its P Since the channel type TFT is difficult to form, the above-described pixel circuit 2 or a pixel circuit having the basic structure should be used. Here, the above pixel circuit 丨 and pixel circuit 2 are examples of a pixel circuit to which the present embodiment is applicable. That is, two transistors (2τ)· i capacitors 136030.doc -13- 201003590 are basic structural examples of the (ic) type. Therefore, the circuit of this embodiment can also be used to connect the pixel circuit 1 or the material circuit 2 As a basic structure, a single crystal is attached with a picture of a transistor and a capacitor, and the present embodiment is shaped.

The pixel circuit that can be used for the heart can be, for example, a 4 □ ic type, a 4T 5 Τ · 1C type, etc., but the detailed structure is not discussed. <Summary of Light-Emitting Control> The outline of the above-described two pixel circuits is as follows. The control capacitor C" is coupled to the control node of the driving transistor Md, and the signal voltage of the line SIG(1) is sampled by the sampling transistor, and the data potential Vsig obtained thereby is applied to the control node rib C. The figure of the [V characteristic of the organic light-emitting diode 〇LED and the electrodeless current Ids of the driving transistor Md (corresponding to the general formula of the driving current (4) of the 〇LED) is applied to the gate of the driving transistor Md. In the case of the data potential, in the case of <pixel circuit]: Fig. 2>, the p-channel type is driven by the crystal.

The source of the Md is connected to the power supply, and the leaf is always set in the saturation region. For this reason, the P-channel type driving transistor Md becomes a steady current source having a value expressed by the formula of FIG. The drain current flowing out of the steady current source is determined by the gate-to-source voltage Vgs having a value of a material potential applied to the gate of the P-channel type driving transistor Md. Therefore, the organic light-emitting diode OLED emits light according to the brightness of the sampled data potential Vsig. As is well known, the organic light-emitting diode OLED changes its characteristics over time, and its j-v characteristics vary as shown in FIG. At this time, since the steady current source wants to flow out the same value of 136030.doc -14-201003590 driving current Id, the applied voltage V of the organic light emitting diode OLED becomes large, and the P-channel type driving transistor Md has a potential of zero. rise. However, since the gate-source voltage Vgs of the P-channel type driving transistor Md is constant, a certain amount of driving current Id flows into the organic light-emitting diode OLED, and the luminance of the light does not change. However, the driving transistor Md is replaced with the N-channel type <pixel circuit 2: Fig. 3>, since the source of the driving transistor Md is connected to the organic light emitting diode OLED, the gate-to-source voltage Vgs and the organic The change in the OLED of the OLED varies with time. Thereby, the driving current Id flowing into the organic light emitting diode OLED changes, and as a result, even if the specified data potential Vsig, the light emitting luminance changes. In addition, since the threshold voltage Vth and the shift rate μ of the driving transistor Md of each pixel circuit are different, a deviation occurs in the drain current Ids according to the formula of FIG. 4, even if the data potential Vsig given is the same, the luminance of the pixel Still changing. Further, in the formula of Fig. 4, the symbol "Ids" indicates the current flowing between the drain and the source of the driving transistor Md which operates in the saturation region. Further, in the drive transistor Md, "Vth" represents a threshold voltage, "μ" represents a mobility, "W" represents an effective channel width (effective gate width), and "L" represents a valid channel length (effective) The gate is very long). Further, "Cox" indicates the sum of the gate capacitance of the drive transistor Md, that is, the sum of the gate oxide film capacitance of each early area and the edge capacitance between the source or drain and the gate. The pixel circuit including the N-channel type body driving transistor Md has the advantage of high driving capability, which simplifies the process. However, in order to suppress the deviation of the threshold voltage Vth 136030.doc •15-201003590 and the mobility μ, it is necessary to The following correction actions are performed before the lighting control operation. <Summary of Correction> The details of the specific control will be described later. Before the sampling, the gate-source voltage Vgs of the driving transistor Md is maintained at the level of the threshold voltage Vth by the holding capacitor Cs. . This preparatory action is referred to as "preventing value correction". After the correction of the threshold value, since the sample voltage Vin after the sampling is applied to the gate of the driving transistor Md, the gate-to-source voltage Vgs is held at "Vth + Vin". The driving transistor Md is turned on according to the magnitude of the data voltage Vin at this time. In the case where the threshold voltage Vth is large and the driving transistor Md is difficult to turn on, "Vth+Vin" is also large. On the other hand, when the threshold voltage Vth is small and the driving transistor Md is easily turned on, "Vth+Vin" is also small. Therefore, the influence of the deviation of the threshold voltage Vth from the drive current is excluded, and the data voltage Vin - timing, the drain current Ids (drive current Id) is also determined. In addition, before the data sampling, the "movement rate (strictly speaking, driving force) correction" is performed after the threshold value is corrected. The movement rate correction further changes the gate potential according to the current driving capability of the driving transistor Md from the state where the voltage "Vth + Vin" is maintained. Between the gate of the driving transistor Md and the source or the drain, a path for charging or discharging the holding capacitor by the current flowing through the current path of the driving transistor Md is provided, by controlling whether or not the path flows in the path The current is corrected for the mobility, but the illustration is omitted in FIGS. 2 and 3. 136030.doc -16- 201003590 followed by illuminating. The OLED OLED is driven by the current value of the 疋, and the image of the charge and discharge path when the mobility is corrected

Driving the transistor Md2 with a drain voltage between the bits) to achieve power supply driving. Further, the image is sampled by the sampling transistor Ms by the write driving pulse WS(!) supplied from the write signal scanning circuit 42 (the pulse annotation of the second scanning signal vscAN2(i) of FIGS. 1 and 3). Signal Ssig (data potential Vsig). <Pixel Circuit 3> A modified example in which the pixel circuit 2 is considered is shown in Fig. 5 . Illustrated in the pixel circuit of Fig. 5, the holding capacitor of Fig. 3 is connected between the gate and the drain of the driving transistor. Connected between the gate and source of the drive IC. The other structure is the same as that of FIG. However, the power supply driving pulse DS(1) supplied by the horizontal pixel line driving circuit 4 i (the first pulse of the scanning signal VSCAm (1)) is at a high level (such as a high potential Vcc-H) and a low level ( The low potential Vcc_L, such as negative power, is not limited to the power supply of the <pixel circuit 3>. However, in the following description of the operation, the power supply driving method of Fig. 5 is premised. Detailed Example&gt; The operation of writing the data in the circuit of Fig. 5 is combined with the correction operation of the threshold voltage and the mobility. These series of operations are referred to as "display control". (A) ~ Figure 6 (F) shows the 136030.doc -17- 201003590 write sequence diagram showing various signals and voltages in the control. Here, the display control system performs the data column in order of the column units. The pixel circuit 3 (1) is written in the column of the object (display υ 'di: column pixel circuit 3 (2, 像素 and the pixel circuit of the third column) 6 = the point is not a write object (not displayed) Column). For the display column, shown in Figure 6 two hunting by the display from this description After the control writes the data, the display column moves to the second column to perform the same display control, and the same display control is repeatedly performed in the third column and the fourth frame J::. After the screen is displayed, the display control for the other side display is repeated as many times as necessary. Fig. 6(A) is a waveform diagram of the image signal Ssig. Fig. 6(m) and Fig. 6(B2) are supplied to the write target. The waveforms of the write drive pulse WS(1) and the power drive pulse DS(1) in the first column are similar. Similarly, FIG. 6 (C1) and FIG. 6 (C2) are applied to the second column of the non-write target. The drive pulse WS(2) and the power drive pulse are still (7), the waveform (9) and the diagram (D2) are i, the write drive pulse ws(3) for the third column of the non-write target and the power supply drive Waveform of the pulse DS(3) Fig. 6(E) is a waveform of the gate potential (potential of the control node NDc) of the driving transistor Md in the pixel circuit 3 (1, ???) of the first column of the writing target Fig. 6(F) is the source potential of the driving transistor Md in the pixel column 3 of the first column (the anode of the organic light emitting diode 〇LED) Waveform diagram of [Period definition] As shown in the lower part of Fig. 6 (F), Fig. 6 is the opening period (Span) of the NTSC video signal specification in one horizontal period (1H) Display waveform 136030.doc -18- 201003590 Figure j and then, in the last one horizontal period (1H), the third correction of the third threshold correction (VTC3) and the movement rate and the actual data are continuously executed. Write 〇ν&amp;μ) (main action). And 匕 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在In the case of the last threshold correction, the short-term correction cannot be performed, and the threshold correction is performed to a certain extent in advance (pre-action display control as shown in Fig. 6] progresses in the high resolution of the display image, and the display pulse In the current situation where the driving frequency is very high, in the short W horizontal period UH) can not be lifted from the threshold voltage correction to the data writer, especially if there is insufficient time for the correction of the threshold, and the threshold is The correction is divided into several times. However, in the case of a small-to-medium-sized display pulse such as a driving frequency that is not too high, the time period of the main operation is sufficient (ih): the initial preparatory movement is sufficient as long as i horizontal periods (out) .备 It is also possible that the preparatory action can be two horizontal periods (2H) or four periods (4H) or more. When a main action 0 main A is performed for a certain column, the next step (and subsequent columns, ·..) can be performed in parallel, so the length of the preliminary operation time hardly affects the entire display period. . However, focusing on the threshold pressure correction, the preparatory action should be fully performed. 〇 〇 , , , , , , , , , , , , , , , , , , , , , , , , , 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 \ Specifically, t, as described in the upper part of Figure 6 (A) 'after the ι field or i (4) front 昼 136030.doc -19. 201003590 face illuminating period (LM 〇), according to the time series 戽 Φ 如m hall 'passing K-CHG', initialization period (INT), first-principal correction (vtC1), first-standby period (WAT1), f-second threshold correction period: (VTC2), second standby The "preparatory action" is executed during the period (WAT2). 2, continue to pass the third threshold correction (VTC3), the third standby period = (WAT3), write &amp; mobile rate correction period (w &amp; ", transfer to the pixel circuit 3 of the first column (1, The main operation is performed in the light-emitting period (LM1) of j). [Summary of the drive pulse] In addition, Fig. 6 shows the time display by the symbol "το~", "T21" in the appropriate part of the waveform diagram. Referring to the time display, the outline of the video signal and the drive pulse will be described. The write drive pulse ws(1) supplied to the first column is as shown in Fig. 6 (Βι), and the "L" level is inactive, "H". The four sampling pulses (SP0~SP3) of the active position periodically appear. At this time, the period of four sampling pulses (sp〇~sp3) passes the preparatory action (time το~ time T15) and the main action (after time τΐ5) The write drive pulse ws(1) in the main operation is a waveform in which the write pulse (wp) is superimposed after the fourth sampling pulse (SP3). For this, 'supplied to m (hundreds) ~1 thousand (100) video signal line DTL (j) (refer to Figure 1 and Figure 5) video signal ssig in line order At the same time, it is supplied to the image signal line DTL(j) of m. Then, the signal amplitude vin of the data voltage obtained by sampling the image signal Ssig is reflected, as shown in Fig. 6(A), which is equivalent to 1 The offset potential (Vo) that appears repeatedly in the previous half of the horizontal period (1H) serves as the reference for the peak of the image signal pulse (PP) that appears repeatedly in the second half of the i horizontal period (1H). The signal amplitude is 136030.doc below. -20- 201003590

Vin is called the data voltage vin. In the complex image signal pulse (pp) shown in Fig. 6 (4), the first image is an important image signal pulse, which is an active image signal pulse (PPx) temporally overlapping with the write pulse (wp). The image signal pulse (ppx) at the time of main motion is derived from the peak value of the offset potential (V.), which corresponds to the tone value to be displayed (to be written) in Fig. 6, which is equivalent to the data voltage %. The tone value (4) also has the case where the pixels of the first column are the same (in the case of monochrome display),

However, it usually changes depending on the tone value of the display pixel column. Figure 6 is mainly used to illustrate in the first column! The pixel material, but the other pixels of the same column, are controlled in parallel with the pixel driving control shown in the figure except that the display tone value is different. The power supply pulse grab (1)' supplied to the drain of the drive transistor (see Fig. 5) is as shown in Fig. 6 (10), from the time until the start of the first-then-edge correction period (vtC1) (time T6) , in the unactive "l" level, if maintained at a low potential Vcc-L (such as 贞 voltage), at approximately the same time as the beginning of the first threshold correction period (vtci) (time T6), transfer to active "Η"/立准' as transferred to high potential Vcc-Η. The high potential Vcc-Η remains until the end of the illuminating period (LM1). For the first column (pixel circuit 3 (2, 』)), the third column (pixel circuit 3 (3, J ·)) ' as shown in Figure 6 (C1) and Figure 6 (C2), Figure 6 ( 〇1) As shown in Fig. 6 (D2), each pulse is applied for one horizontal period (1H). Specifically, during the period T5 to T7 at which the second sampling pulse _ corresponding to the first threshold correction period (VTCl) of the first column is applied, the second column is applied corresponding to the initialization period (ΙΝΤ). The first sample pulse (Sp〇). 136030.doc -21 - 201003590 In the middle of the application of the pulse of Shai, that is, at time Τ6, the power-drive pulse DS(1) of the first column rises to a high level (high potential Vcc-Η) and becomes active. Thereafter, during the period T1〇 to Τ12 of the third sampling pulse (sp2) corresponding to the second threshold correction period (VTC2) of the first column, the second column is delayed by one from the first column. During the horizontal period (1Η), the second sampling pulse (SP1) is applied, and the third column is delayed by 2 horizontal periods ((1Η)χ2) from the first column, and the first sampling pulse (Sp〇) is applied. . In the middle of the pulse application, i.e., at time T1, the power drive pulse DS(2) of the second column rises to a high level (high potential Vcc - H) and becomes active. Thereafter, during the period of applying the fourth sampling pulse (sp3) corresponding to the third threshold correction period (VTC3) of the first column, the period from 1515 to 丨7,

Dynamic pulse) rises to a high level (high potential I

&gt; 丨 奶 丨 丨 世 世 世 世 修正 修正 修正 修正 修正 修正 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 136 Next, it is shown in each period of FIG. 6(A), and the potential changes of the source and the gate of the driving transistor Md shown in FIG. 6(E) and FIG. 6(F) under the above pulse control are explained. Accompanied by its actions. Further, it is preferable to refer to the preliminary operation explanatory diagram of the pixel circuit 3 (1, j) in the first column shown in FIGS. 7(A) to 9(B), and the source potential transition shown in FIG. The main operation explanatory diagram of the pixel circuit 3 (1, j) in the first column shown in the figure 'A' to (c) is shown in FIG. 5 and the like. [Light-emitting period of the front screen (LM0)] The pixel circuit 3 (1, 』) of the first column is the luminescence of the front surface (hereinafter referred to as the front surface) before the time of one field or one frame. In the period (LM0), as shown in Fig. 6 (B1), since the write drive pulse ws(1) is at the "1" level, the sampling transistor Ms is turned off. Further, as shown in Fig. 6 (B2), the power supply driving pulse DS(1) is applied at a high potential Vcc - H. Ν'》Fig. 7(A) does not rely on the data writing action of the front side to input the data voltage that keeps driving the gate of the dynasty Md. The first LED is in the state of illumination. Since the driving transistor (4) is set to :: and the area operation, the driving device Id (-Ids) flowing into the organic light emitting diode is connected to the gate source voltage vgs of the driving transistor Md held by the holding capacitor Cs. And the enemy gS takes the value calculated by the formula shown in Fig. 4. L discharge period (D-CHG);] In Fig. 6, the processing is shown from time to time. 1 The new screen for the sequential scan of the line is the Τ〇0” horizontal pixel line drive circuit 4! (see Fig. 5) as shown in Fig. 136〇3〇, d〇c • 23· 201003590 6(B2) The power drive pulse DS(1) is switched from the high potential Vcc_H to the low potential Vcc_L. The drive transistor Md is dropped sharply to the low potential Vcc_L, the source and the drain due to the potential of the node which is the function of the drain before. The potential is reversed, so the node of the drain is used as the source before, and the node of the source is used as the drain before, and the drain potential is extracted (however, the note in the figure is still the source). Therefore, as shown in Fig. 7(B), the drain current Ids which is reversed beforehand flows into the driving transistor Md. During the period in which the reverse current flows in the driving transistor Md 'In Figure 6, the note is "Discharge Period (D-CHG)". When the discharge period (D-CHG) is started, as shown in FIG. 6(F), the time T0 is set as a boundary, and the source potential Vs of the driving transistor Md (actually operating the gate potential) is rapidly discharged. It is reduced to approximately the vicinity of the low potential Vcc_L. At this time, the low potential Vcc-L is smaller than the sum of the threshold voltage Vth_oled. of the organic light emitting diode OLED and the cathode potential Vcath, in other words, the "Vcc_L&lt;Vth_oled. + Vcath", the organic light emitting diode OLED extinction. Further, before the end of the discharge period (D-CHG) (time T1), as shown in Fig. 6(A), the potential of the video signal Ssig falls from the data potential Vsig to the data reference potential Vo. At time T0, as shown in Fig. 7(B), the sampling transistor Ms is turned off, and the control node NDc is in a floating state. Therefore, as shown in Fig. 6(E), with the time T0 as the boundary, the gate voltage Vg of the driving transistor Md is lowered. 136030.doc -24· 201003590 [Initialization period (ΙΝΤ)] Next, the write signal scanning circuit 42 (refer to FIG. 5) is as shown in FIG. 6 (Β1), and at time τ, the write drive pulse ws(1)&amp; The "L" level is transferred to the H" level, and the first sampling pulse (SP〇) is given to the gate of the sampling transistor ms. At this time T1, the discharge period (D_CHG) ends, and the initialization period '(INT) starts from here. () In response to the application of the sampling pulse (SP0) at time T1, as shown in Fig. 7(C), the sampling transistor Ms is turned on. As described above, at the time T1 of arrival, the potential of the image signal Ssig is switched to the reference potential v〇. Therefore, the sampling transistor Ms samples the data reference potential Vo of the image signal Ssig, and transmits the sampled reference potential v 抽样 to the gate of the driving transistor Md. By this sampling operation, as shown in Fig. 6(E), the gate voltage Vg of the driving transistor Md which is lowered by the time τ 〇 is converged to the data reference potential v 。. The sampling pulse (Sp 〇) shown in Fig. 6 (B1) converges from the time T1, and the potential converges (J, when the time T2 elapses for a sufficient time, the sampling transistor 吣 is turned off. Thus, 'Secondly, the sampling transistor Ms is connected. At the time T5, the gate of the driving transistor Md becomes electrically floating. At this time T5, the timing at which the sampling transistor Ms is turned on again is controlled to be the end of the first horizontal period (1H). The timing is basically the same, and the timing of the image signal pulse (pp) in the horizontal period (1H) is accommodated during the period of time T2 to T5 (refer to FIGS. 6(A) and (Bi)). k sampling pulse (SP〇) Observe that at this time, the duration (time τι~τ2) of the sampling pulse (sp〇) at which the write drive pulse ws(1) forms the H" level becomes 1 136030.doc -25· 201003590 horizontal periods (1H) The image signal Ssig of the previous half is taken during the period of the reference potential potential Vo (time το~T3). Then, at time D, the sampling transistor Ms is turned off, waiting for ~ Λ 5 tiger line DTL (j) The potential of the time T4 after the end of the deviation by the image signal pulse (pp) At a later time T5, the second sampling pulse (spi) of the resampled data reference potential Vo is raised by the second sampling pulse (spi) of the soil. The result of the control is to avoid the erroneous sampling at the time T5 when the second sampling pulse (spi) is raised. The signal potential of the image signal Ssig is vsig. In addition, the second sampling in time T5 is _ ---- ^ ^ No. The gate voltage Vg has been kept at the reference potential of the data. Therefore, j has The second sampling compensates for the small loss of leakage current, etc. Generally speaking, the gate voltage Vg is hardly deviated. When the description on the time axis is returned forward a few times, at the time, by adding the first sampling pulse (SP) 〇), the sampling transistor Ms is turned on, as shown in Fig. 6 ('The gate voltage Vg of the driving transistor Md converges to the data reference voltage "When the voltage is held, the holding voltage of the capacitor CS is reduced in conjunction with it, in place: 0 Vcc - Lj (Fig. 6(F)). Because of the discharge of Fig. 7(B), the source forms a low potential Vcc-L, and the pole voltage Vg with reference to the low potential Vcc-L defines a holding capacitor. Change order: ,), when the pole is closed, Vg drops to the data reference potential v. : Keep the holding voltage of the electric ^CS in conjunction with it, "V0-Vcc B.s ^, the child keeps the voltage converging—" In addition, because the holding voltage "%, the gate source and the electric source are willing to v C~L" Md":: The voltage between the primary poles is not higher than the driving voltage... When the voltage is large, she can't carry out the threshold repair afterwards. 136030.doc -26- 201003590 Action, so it becomes "Vo-Vcc_L&gt;Vth" The way to determine the potential relationship. Therefore, the hunting is completed by the gate voltage V g and the source potential Vs of the driving transistor M d , and the preparation of the threshold correction operation is completed. [First threshold correction period (VTC1)] After the sampling transistor Ms starts the second Vo sampling at time T5, as shown in Fig. 6 (B2), at time T6, the power supply driving pulse DS(1) is from When the VSS level rises to the VDD level, the initialization period (INT) ends and the first threshold correction period (VTC1) starts. Before the start of the first threshold correction period (VTC1) (time T6), since the sampling transistor Ms in the on state samples the reference potential Vo in the data, the gate voltage Vg of the driving transistor Md is in a certain data. A state in which the reference potential Vo is electrically fixed. In this state, at time T6, the horizontal pixel line drive circuit 41 (see FIG. 5) raises the power supply drive pulse DS(1) from the "L" level (=VSS) to "H" as shown in FIG. 6(B2). Level (=VDD). The horizontal pixel line drive circuit 41 maintains the potential of the power supply line for driving the transistor M d at the south potential V c c — 预先 before time T6 and before the start of the processing of the next frame (or field). A voltage of "VDD-VSS" is applied between the source and the drain of the driving transistor Md by the start of the power supply driving pulse D S (1). Thus, the drain current Ids flows from the power source to the driving transistor Md. The source of the driving transistor M d is charged by the immersion current I ds as shown in Fig. 6(F). Since the source potential Vs rises, the value of 136030.doc -27- 201003590 of "Vo-Vcc_L" is taken before. The gate-source voltage Vgs of the driving transistor Md (the holding voltage of the holding capacitor Cs) gradually becomes smaller (FIG. 6(E) and (F)). At this time, the source charging speed of the driving transistor Md by the drain current Ids is not too large. The reason will be described with reference to Fig. 8(A). As shown in FIG. 8(A), the gate bias potential applied to the gate voltage Vg of the driving transistor Md is defined by the reference potential potential Vo, and since the bias potential is not too large, the transistor Md is driven. It is turned on in a shallow on state, that is, in a state in which the driving ability is not too large (first reason). Further, although the drain current Ids flows into the holding capacitor Cs, since the charging of the capacitor Coled. of the organic light emitting diode OLED also consumes the drain current Ids, the source potential Vs is not easily improved (second reason). Further, since it is necessary to terminate the sampling pulse (SP1) at a time T7 before the time T8 when the next image signal Ssig is shifted to the data potential Vsig (refer to FIG. 6 (B1)), the charging time of the source potential Vs is insufficient ( The third reason). If the second sampling pulse (SP1) shown in FIG. 6(B1) can continue for a sufficient length of time beyond the time T7, as shown in FIG. 1A, the source potential Vs of the driving transistor Md (organic light-emitting diode) The anode potential of the OLED is raised with time as the starting point of time T6, and converges with "Vo-Vth" (curve CV shown by the broken line of Fig. 10). In other words, the rise of the source potential Vs is substantially completed when the gate-to-source voltage Vgs (the holding voltage of the holding capacitor Cs) is just at the threshold voltage Vth of the driving transistor Md. [First Standby Period (WAT1)] But in reality, since time T7 is before reaching its convergence point, the duration of 136030.doc -28- 201003590 sampling pulse (SP1) ends, whereby the first threshold The period (VTC1) ends '*The first-standby period (wati) starts. * Specifically, when driving the inter-electrode-to-source Vxl (&gt;vth) between the transistors Md, change 5, as shown in Figure 1A. 'When driving the transistor, the source potential Vs is from the low potential Vcc- L increases to the interval value correction period (VTC1) of "ν〇_νχΐ". At this time (time T7), the voltage value Vx1 is held in the holding capacitor a.

The first threshold correction period (VTr), gentleman), ,, ° beam, because the sampling transistor

Since Ms is disconnected, the poles between the driving and the crystal coffee are switched from the state in which the data reference potential is electrically fixed to the electrically floating state. 2: After the T7 is tapped, when the source potential Vs rises, the potential (Vg) of the gate coupled to the source rises with it (Fig. 6(8), disk 2. As a result, this example is in the first-standby period (WAT1). At the end point (time τ(9)', the source potential Vs is larger than the "v〇_Vth" of the target (see figure). In addition, as shown in Figs. 6(E) and (F), the gate-to-source voltage Vgs is not The two standby periods (WAT1) are the same as the previously described initialization period (Cong): 'There is a need to wait for the passage of the image signal pulse (PP), and it is called ": machine period". However, time T7~ T1. The rise of the gate voltage Vg during the relatively long standby period. Further, as described above, the gate-to-source voltage gS does not converge toward the threshold voltage Vth. ', u "Val" indicates that the gate voltage Vg is at the In the standby period (WA11), the 曰 曰 带 带 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Val 。 Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val Val. Doc -29· 201003590 When the source potential Vs rises due to the rise of the gate voltage Vg, the source potential Vs is at the first At the end of the machine period (WAT1) (time T10), it becomes "Vo-Vxl+Val" (refer to Fig. 8(B)). Therefore, it is necessary to return the gate potential to the data reference potential Vo of the initializing level, and again. [Second threshold correction period (VTC2)] Therefore, in the second horizontal period (1H) (time T10 to T15), the previous operation is performed. The first margin correction period (VTC1) performed during the horizontal period (1H) (times T5 to T10) is the same as the first standby period (WAT1), that is, the second threshold correction period (VTC2) is executed. The second standby period (WAT2). However, at the time T5 at which the first threshold correction period (VTC1) is started, the gate-to-source voltage Vgs (the holding voltage of the holding capacitor Cs) is "Vo_Vcc-L". The larger value is, and at the time T10 at which the second threshold correction period (VTC2) is started, the holding voltage is reduced to a smaller "Vxl". As shown in Fig. 6 (B1), at time T10, sampling is performed. When the pulse (SP2) rises and the sampling transistor Ms is turned on, the gate voltage Vg of the driving transistor Md (= "Vo+Val" Connected to the lower potential (Vo) image signal line DTL(j). Thus, the current equivalent to its differential (Val) flows from the gate of the driving transistor Md into the image signal line DTL(j), as shown in Figure 8 (C). ), the gate voltage Vg is forcibly lowered to the data reference potential Vo. The potential (Va 1) deviation in the gate of the driving transistor M d is between the gate source of the holding capacitor Cs and the driving transistor Md. The parasitic capacitance Cgs is input to the source of the driving transistor Md, and the source potential Vs is pulled down. 136030.doc -30- 201003590 The amount of pull-down of the source potential Vs at this time is expressed as "g*Val" using the capacitance combination ratio g. Here, the capacitance coupling ratio g is expressed as g=(Cgs) using the above-described gate-source parasitic capacitance Cgs, the capacitance value (Cs) of the same symbol as the holding capacitor Cs, and the capacitance of the organic light-emitting diode OLED Coled. + Cs) / (Cgs + Cs + Coled.). Therefore, the source potential Vs is reduced by "g*Val" from the previous "Vo-Vxl+Val", and becomes "¥〇-Vx 1 (1 -g) Va 1". Since the capacitance coupling ratio g is smaller than 1 in order to be clear from the definition, the amount of change in the source potential Vs "g*Val" is smaller than the amount of change in the gate voltage Vg (Val). When the source-source inter-electrode Vgs (= "Vxl-(1_g)Val") of the 5-driving transistor is larger than the threshold voltage Vth of the driving transistor Md, as shown in FIG. 8(C), The drain current Ids flows. The source current Ids flows to the source potential Vs of the driving transistor Md to become "Vo-Vth", and the driving transistor Md is cut. However, as shown in Figs. 6(E) and (F), the operation of the present embodiment is such that the voltage Vgs between the gate and the source becomes "Vx2" (where Vx2 contains the magnitude of Vx1 &gt; Vx2 &gt; Vth). The sampling pulse (SP2) ends, so the sampling transistor Ms is turned off. The holding voltage of the capacitor Cs is held at time T12 "Vx2". [Second Standby Period (WAT2)] The second standby period (WAT2) starts from time T12. The second standby period (WAT2) is the same as the previous first standby period (WAT1). Since the sampling transistor Ms is turned off and the gate voltage Vg is electrically floating, the gate voltage Vg is also dependent on the source potential. The rise of Vs is up to 136030.doc •31 · 201003590 liters (see Figure 9(A)). However, the potential increase effect of the gate electric waste Vg (bootstrap effect) is because the gate-source voltage Vgs at the start of the basin is close to the control target "Yang", so it is not too big' as shown in Fig. 6(8) and Fig. 6(F). As seen from the time Tl2 to T15, the potential of the source potential Vs and the gate voltage Vg rises little. u, the younger brother, the field and the 'the second standby period (WAT2) of Fig. 9(A) 'When the inrush current 1^ flows and the source potential...the rising portion is "Va2", when the standby period ends ( At time T15 in Fig. 6, the source potential is "v〇_ 遏2". When the source potential rises, it is transmitted to the floating state by the parasitic capacitance Cgs and the material capacitance (10) between the source and the source. As a result, the open voltage ～ also rises by the same potential Ί. However, as shown in Fig. 6(E), the potential rising portion "Va2" of the closed-circuit electric dust lap is much smaller than the potential rising portion "(5)" in the second standby period (WAT1). [Different two-cylinder limit correction (VTC3)] From time T15, the main action starts to 0. The third threshold correction (VTC3) and the third threshold correction (VTC3) (time Τ1 5~τι 7) are executed. The second threshold correction period (VTC2) is handled in the same manner. However, during the second threshold correction period (VTC2), Τ10, 1 and the inter-electrode voltage Vgs (holding voltage of the holding capacitor Cs) are m" The large value is reduced to a smaller "Vx2" at time T15 at which the third margin correction period (VTC3) is started. The action of the soil is the reverse of the 2nd threshold correction period 2)" 匕 not sw. "Second Threshold Correction Period (VTC2)" 136030.doc •32- 201003590 Explicitly, by replacing "Val" with "Va2" and "Vxl" with "Vx2", it is applicable to Third threshold correction (VTC3). This can be seen from the comparison between Fig. 8(C) and Fig. 9(B). However, unlike the second threshold correction period (VTC2), before the end of the third threshold correction (VTC3) time T17, as shown in Fig. 6(E) and Fig. 6(F), the driving power is The gate-source voltage Vgs of the crystal Md (the holding voltage of the holding capacitor Cs) is equal to the threshold voltage Vth. Therefore, the driving transistor Md is cut at the point where the gate-to-source voltage Vgs is equal to the threshold voltage Vth, and thereafter, the drain current Ids does not flow. At this time, the source potential Vs of the driving transistor Md is "Vo-Vth". As described above, by the correction of the threshold voltage including the number of times in the middle of the standby period (this example is 3 times), the holding voltage of the holding capacitor Cs is converged to a certain period during the standby period. The shape finally becomes the threshold voltage Vth. Here, when the voltage between the gate and the source of the driving transistor is increased to "Vin", the voltage between the gate and the source becomes "Vin + Vth". Further, a driving transistor having a large threshold voltage Vth and a small driving transistor thereof are considered. In the former, the driving transistor having a large threshold voltage Vth, the voltage between the gate and the source is as large as the threshold voltage Vth, and vice versa, the driving voltage of the threshold voltage Vth is small because of the threshold voltage Vth. Small, so the voltage between the gate and the source becomes smaller. Therefore, in the case of the threshold voltage Vth, the deviation is canceled by the threshold voltage correcting operation, and when the same data voltage Vin is used, the same > and the pole current I d s can flow into the driving transistor. In addition, during the correction period including the third limit, that is, the first threshold 136030.doc -33 - 201003590 value correction period (VTCl), the second threshold correction period (VTC2), and the third threshold In the correction (VTC3), it is required that the drain current Ids is mainly consumed only when flowing into one of the electrode sides of the holding capacitor Cs and one electrode side of the capacitor of the organic light emitting diode OLED, and the organic light emitting diode OLED is not turned on. . The anode voltage of the organic light-emitting diode OLED is described as "Voled.", and the threshold voltage is described as "Vth_oled.", and when the cathode potential is described as "Vcath", the organic light-emitting diode OLED is maintained at The condition of the disconnected state is "Voled. S Vcath + Vth - oled." Here, when the cathode potential Vcath of the organic light-emitting diode OLED is kept at the low potential Vcc - L (e.g., the ground voltage GND), the threshold voltage Vth_oled. is extremely large, and the formula can always be established. However, the threshold voltage Vth_oled is determined by the manufacturing conditions of the organic light emitting diode OLED, and in addition, in order to efficiently emit light at a low voltage, the threshold voltage Vth_oled. cannot be made too large. Therefore, the organic light-emitting diode OLED should be pre-biased in advance by setting the cathode potential Vcath to be larger than the low potential Vcc-L before the end of the three threshold correction period and the second description of the mobility correction period. Just right. [Third standby period (WAT3)] The above description explains the threshold voltage correction. However, this operation example continues with the standby period (third standby period (WAT3)) for "write &amp; mobility correction". The third standby period (WAT3) is different from the first standby period (WAT1) and the second standby period (WAT2) for correcting the threshold voltage before, and is only the "write &amp; mobility correction" that follows. When not, 136030.doc -34- 201003590 The potential change is unstable and the standby error sampled the signal signal Ssig during the short standby period. As shown in Fig. 6(m), at the time T17, the sampling pulse is shifted from the level to the "L" level, and the third standby period (WAT3) is started. _ The third standby period (WAT3) is in the middle of the time τ ΐ 8, as shown in Fig. 6 (a), with the image signal pulse (PPx) of the pixel circuit 3 (1, υ displayed data potential as image) Signals are supplied to the video signal line

DTL (J) (refer to Fig. 11 (4)). In the image signal Ssig, the data potential Vsig is higher than the reference potential V. The difference corresponds to the data „Vin corresponding to the tone value that should be displayed by the pixel circuit. In other words, the f potential Μ is equal to “Vo+Vin”. Elapsed time from the potential change at time T18, in the image signal

The time Ssig stabilizes at the data potential Vsig Τ 19, and the third standby period (WAT3) ends. [Write &amp; Move Rate Correction Period (w&amp;卩)] Write &amp; Move Rate Correction Period (ψ &amp; μ) starts from time Τ19. As shown in Fig. 6 (f), the time τ 19 in the image signal pulse (ρρχ) at the time of applying the main motion supplies the write pulse (wp) to the closed end of the sampling transistor Ms. Thus, as shown in Fig. 11(B), the sampling transistor Ms is turned on, and the data potential Vsig (= v 〇 + vin) of the image signal line DTL (J) is connected to the gate voltage.

The difference of Vg (=Vo), that is, the data voltage Vin is input to the gate of the driving transistor. As a result, the gate voltage Vg becomes "v〇+Vin". When the gate voltage vg rises by the data voltage Vin, the source potential % also rises in conjunction with it. At this time, the data voltage vin is not transmitted to the source 136030.doc -35- 201003590. The polar package Vs 'the source potential % rises according to the ratio of the above-mentioned capacitance combination ratio g, and the knife is increased, that is, the system rises "g* Vin" degree. Therefore, the source potential vs after the change becomes "VG_Vth+g*vin". As a result, the voltage Vgs between the gate and the source of the driving transistor (4) becomes "(1_g) vin + vthj. Here, the deviation of the mobility μ is explained. The three threshold voltage corrections before this, in fact, Each time the out-of-pole current Ids is discharged, the error due to the mobility μ is included. However, since the deviation of the threshold voltage Vth is large, the error due to the mobility rate is not strictly discussed. In this case, the capacitance combination ratio is not used. And only by "Val" and

Va2" indicates that the voltage indicating the degree of the result has been explained, in order to avoid the complexity of explaining the deviation of the mobility. / In addition, it has been explained that, strictly speaking, after the threshold electric dust correction is performed, since the threshold voltage reading is maintained in the holding capacitor Cs, then the driving transistor _ is turned on, and the drain is turned off. The current does not change according to the magnitude of the limit voltage C Vth. In the case of the towel, the conduction 1 of the driving transistor Md corrected by the threshold voltage is changed by the driving current at the time of the conduction of the holding current Cs (the value of the voltage between the gate and the source) When the deviation amount Λν (which may take a positive or negative polarity), in addition to the mobility ratio _ deviation of the driving transistor Md, more strictly, in addition to the purely intentional mobility of the physical properties of the semiconductor material, In the construction or process of the transistor, the comprehensive deviation of the factors affecting the current driving force. When returning from the above, in the figure u (8), the sampling transistor Ms is turned on, and the gate voltage % is added. When the data voltage is %, 136030.doc • 36 - 201003590 The driving transistor Md needs to flow the drain current Ids according to the data voltage Vin (tone value) into the source drain. At this time, the drain current Ids moves. As a result, the source potential Vs is "Vo-Vth+g* Vin+AV" in which "Vo-Vth+g*Vin" is added to the fluctuation amount AV of the above-described mobility ratio μ. In order not to cause the organic light emitting diode OLED to emit light, it can be satisfied In the case of "Vs (=Vo-Vth+g* Vin+AV)&lt;Vth_oled.+Vcath", the cathode potential Vcath according to the data voltage Vin and the capacitance coupling ratio g is set in advance. The organic light-emitting diode OLED is reverse-biased with a potential, and is in a high-impedance state, so that it does not emit light, and further, it exhibits a simple capacitance characteristic, and is not a diode/characteristic. At this time, since the above conditional expression is satisfied, the source The potential Vs does not exceed the sum of the threshold voltage Vth_oled. of the organic light-emitting diode OLED and the cathode potential Vcath, so the capacitance value of the capacitor Cs (noted by the same symbol Cs) is kept for charging, and the organic light-emitting diode OLED is used. The capacitance of the equivalent capacitor at the reverse bias potential (the same symbol as the parasitic capacitance, noted) and the parasitic capacitance (denoted as Cgs) existing between the gate and source of the driving transistor Md" C=Cs + Coled. + Cgs", and the drain current I ds (drive current Id) is used. As a result, the source potential V s of the driving transistor M d rises. At this time, because of the threshold of the driving transistor Md The value correction action has been completed, so the drive crystal The drain current Ids flowing out of Md reflects the mobility μ. As shown in the equation of "(lg)Vin+Vth-AV" in Fig. 6(E) and Fig. 6(F), since it is held in the holding capacitor Cs In the voltage Vgs between the gate and the source, the variation amount AV of the source potential Vs is subtracted from the gate 136030.doc -37- 201003590 corrected by the threshold value, and the voltage between the source and the source Vgs (= (lg) Vin + Vth) is subtracted. Going, the fluctuation amount is held in the holding capacitor Cs in such a manner as to implement a negative anti-locking. Therefore, the variation A V is also referred to as a "negative feedback amount" hereinafter. The negative feedback amount AV is expressed by the formula of ΔVmds/fokd + Cs + Cgs) in a state where the reverse bias potential is applied to the organic light emitting diode OLED. From this formula, it is understood that the variable amount AV is a parameter that changes in proportion to the variation of the drain current Ids. From the above formula of the negative feedback amount Δν, the negative color feed amount AV added to the source potential % depends on the magnitude of the drain current Ids (the magnitude is related to the magnitude of the data repression Vm, that is, the positive correlation with the tone value Relationship), the time from the time T19 to the time T2 需要 required for the movement rate correction shown in Fig. 6 (31), which is the time (1). In other words, the larger the tone value, and the longer the use time (1), the larger the negative feedback amount Δν. Therefore, sometimes the time (1) of the movement rate correction does not need to be constant, but it should be adjusted according to the immersion current (4) (tone value). If the power is not close to the white display, the time for correcting the movement rate (t) is shortened. Conversely, when the display is close to 2 and the current of the stepless current Ids is small, the correction of the movement rate can be extended: (1). The movement rate correction time is automatically adjusted according to the tone value, and the function is previously set in the write signal scanning circuit 42 of FIG. 5, etc. [lighting period (LM1)], writing &amp; moving at time T20' During the rate correction period (w&amp; (1) end time period (LM1) starts. Like at time T20, since the write pulse (wp) ends, the sampling electric 姊Ms is turned off. The gate of the driving transistor _ becomes electrically floating. (4) 136030.doc -38- 201003590 Receiver, during the write &amp; mobile rate correction period (W&amp;p) before the illuminating period (LMl), the driving transistor Md is required to flow out the drain current Ids according to the data voltage Vin However, the reason is not limited to the outflow. The reason is that the current value (Id) flowing into the organic light emitting diode OLED is very small compared to the current value (Ids) flowing into the driving transistor Md, and the sampling transistor Ms is turned on, so the driving power is driven. The gate voltage Vg of the crystal Md is fixed at "Vo+Vin", and the source potential Vs converges to a potential ("Vofs+Vin-Vth") which falls from the threshold voltage Vth portion. Therefore, even if the mobility is corrected The time (1) is extended by a few, and the source potential Vs is not Deviation to the potential exceeding the convergence point. The mobility correction is corrected by monitoring the difference in the mobility μ with the difference in the speed before convergence. Therefore, even if the data voltage Vin of the white displayed by the maximum luminance is input, The end point of the time (1) for determining the mobility correction before the convergence is reached. When the light-emitting period (LM1) starts and the gate of the driving transistor Md becomes floating, the source potential Vs can further rise. Therefore, the driving transistor Md flows out. The driving current Id of the input data voltage Vin is moved

As a result, the source potential Vs (the anode potential of the organic light-emitting diode OLED) rises, and the reverse bias potential state of the organic light-emitting diode OLED is released, as shown in FIG. 11(C), because the drain current Ids is taken as The driving current Id starts to flow into the organic light emitting diode OLED, so the organic light emitting diode OLED actually starts to emit light. Shortly after the light emission starts, the driving transistor Md is saturated according to the input tributary voltage Vin and the polar current Ids, and the polar current Ids (= Id) - timing, the organic light emitting diode OLED becomes the data voltage Vin The state of illumination of the brightness. 136030.doc -39- 201003590 The rise of the anode potential of the organic light-emitting diode OLED which occurs between the start of the light-emitting period (LM1) and the constant brightness, but the rise of the source potential Vs of the driving transistor Md, This is referred to as "AVoled." to indicate the amount of rise of the anode voltage Voled. of the organic light-emitting diode OLED. The source potential Vs of the driving transistor Md becomes "Vo-Vth+g*Vin+AV+AVoled." (refer to Fig. 6(F)). Further, as shown in FIG. 6(E), since the gate voltage Vg is in a floating state, the source potential Vs rises in accordance with the saturation of the no-pole current Ids as the source potential Vs rises in the same manner as the rise amount AVoled. At the same time, the gate voltage V g is also saturated. As a result, with respect to the gate-to-source voltage Vgs (holding voltage of the holding capacitor Cs), the value at the time of correction of the movement amount ("(g) Vin+Vth-AV") is also maintained in the light-emitting period (LM1). During the light-emitting period (LM1), since the driving transistor Md operates as a steady current source, the I-V characteristic of the organic light-emitting diode OLED changes with time, and the source potential Vs of the driving transistor Md also changes. However, the holding voltage of the holding capacitor Cs is independent of the time-dependent change of the I-V characteristic of the organic light-emitting diode OLED, and is maintained at "(1-g) Vin+Vth-AV". Then, since the holding voltage of the holding capacitor Cs includes the component (+Vth) for correcting the threshold voltage Vth of the driving transistor Md and the component (-AV) for correcting the variation of the moving rate μ, even the threshold voltage Vth And the mobility μ varies between different pixels, driving the drain current Ids of the transistor Md, in other words, the driving current Id of the organic light emitting diode OLED remains constant. 136030.doc -40- 201003590 Specifically, Lu's 1 time transistor Md's limit value is the larger the Vth, and by the above-mentioned electric waste, the correction component (+vth) decreases the source electric day. VS ' increases the source and inter-pole powerhouses in a way that flows more currents Ids (drive current Id). Therefore, even if the threshold voltage vth varies, the in-pole current I d s is still constant. Further, the driving transistor Md maintains the capacitance by the fact that the mobility is small and the amount of variation is small. ! The movement rate correction component (-ΔV) held by Cs is also reduced, so that the source of the large source is relatively small, so that the drain current is further flowed out. The driving current Id) acts. Therefore, even if the mobility rate "has changed, the immersed current Ids is still constant. &quot; 卩 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动 驱动

And the mobility ratio μ deviation, further, even if the characteristics of the φ s μ electric S driving electric day body Md are doubled with time, as long as the data voltage Vin phase brightness is kept constant. The organic hair first diode coffee hair &lt;pixel circuit color difference&gt;&gt; ==, based on the structure and operation of the above pixel circuit, the characteristics of the display device of the present embodiment are explained. 1 that the difference in color of the pixel structure is due to the organic material (4) constituting the organic light-emitting diode ^ ^ ^ organic film, as described above, even if the equivalent circuit of the pixel is adjacent to the pixel when the material is contained The structure is different. In this case, from the same column of continuous n (n 廿 spleen I „ 冢 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 构成 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素 像素The ratio of the respective illuminances of the primary colors of W 3 is used to display an arbitrary ! color ' and N = 3. The following is the premise of displaying the three primary colors of _ _ of _. Thus, since the pixel unit displays an arbitrary color, it is in the pixel array. The minimum unit of the same structure is provided. The feature of the present embodiment is: "In the pixel unit it, the number of groups of pixel circuit elements including the driving transistor, the holding capacitor, and the light-emitting element in the pixel of the specific color is greater than the color of the pixel. In the following, the number of "groups" in one pixel is referred to as "group number". The "specific color" is described later. As described above, the "pixel circuit element" includes at least a driving transistor _, a holding capacitor 〇, and a light-emitting element (the organic light-emitting diode of the present embodiment). The pixel circuit may be the aforementioned &lt;pixel circuit, <pixel circuit 2&gt;'&lt;pixel circuit 3&gt;, 4T1 type, 5T.1C type, 3T may be 4T.1C type as long as the requirements for the &quot;group&quot; are satisfied. , 迠, choose C type and other 2T· lc type. However, it is better to use the image of the pixel circuit of Figure 5, because it contains all the power and the wide-screen 44 (TFT) system is easy to N-channel type. Amorphous 矽TFT, electric power surname. D " , , 孓旳 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Various descriptions will be continued on the premise of the pixel circuit of FIG. In the following, in the present embodiment, the "specific specific color" and the "phase is W are not in the spot. The specific color of the visibility orientation" is 136030.doc -42 - 201003590 When the specific color of the defect is not lit, and the rate of occurrence of the unlit defect is statistically adjusted, the probability that a certain color becomes an unlit defect may be higher than the other colors. In this case, it will become unpointed. A color with a high probability of bright defects is referred to as a "specific color." According to the investigation by the present inventors, it is known that the unstained defect or the value of the brightness that does not form an unlit defect but the brightness is not as high as desired (hereinafter referred to as a semi-unlit defect) includes: in the organic light emission Formation of diodes

In the step, the current flowing into the anode and the cathode is blocked by the disconnection, and even if the disconnection is not reached, the wiring portion and the contact are formed with high resistance; further, the dust forms a short circuit between the anode and the cathode. When the driving current of the organic light emitting diode OLED flows into the short circuit, the driving current does not flow into the organic light emitting diode OLED, or the current is insufficient. As a result of investigations by the present inventors, an unilluminated defect or a semi-unfinished defect has the largest occurrence of defects due to a short circuit. Fig. 12 shows an equivalent circuit of the pixel circuit 3A, ") when a short circuit is formed between the anode and the cathode of the organic light-emitting diode, due to dust. When dust is adhered to the organic multilayer film forming the organic light-emitting diode 〇LED, between the anode and the cathode of the organic light-emitting diode, the dust of the conductive or the pattern is caused by the dust. The connected road leads to electrical connections. In this case, the turbulent current flowing through the driving transistor Md is divided into a driving current 流 flowing through the organic light emitting diode 〇led and a current 流 flowing through the resistor R. As mentioned above, the current without current is in accordance with the constant current of the image of the line «1 muscle (1), but the current Id is reduced by 136030.doc -43- 201003590 when the current flows through the resistor R. The luminance of the organic light-emitting diode OLED is lowered (half unlit defect). When the resistance R is large, the half unlit defect is not significant. However, the smaller the resistance R is, the more the current Ir increases, and the drive current Id decreases, so that the half unlit defect becomes remarkable. When the resistance becomes small to some extent, the driving current flows into the organic light emitting diode OLED to generate an unlit defect. For the reason that the dust of a certain size is attached, the anode and the cathode of the organic light-emitting two (four) OLED are electrically short-circuited via a resistor scale, and the greater the dust, the more the probability of short-circuit is increased, and the short-circuited electricity (4) also has (four) dust. The bigger and smaller the trend. This should be caused by a part of the dust that does not form an organic multilayer film, in which part of the anode metal is in direct contact with the cathode metal, or electric field concentration occurs even without direct contact, and leakage current increases in part thereof. . The inventors' investigations are as follows: The pixels of the relatively thin color of the organic multilayer film of the light-emitting diode 〇LED tend to have a tendency to cause unlit defects and semi-unlit defects. This confirms that the above reasons for the occurrence of castor are correct. In this case, in the present embodiment, in the pixel unit, the pixel having the smallest total thickness of the organic multilayer film composed of the plurality of organic thin films can be used as an "unlit defect" in the organic light-emitting diode. In the case of the display of the three primary colors of the specific hall, the total thickness of the organic multilayer film of which color is the smallest, depending on the material of the film to be used, the mold structure, etc. In addition, the total film thickness is also dependent on whether or not it is used. It is different from the light structure that reflects the emitted light by the reflection component. Therefore, the total film thickness of the color is the smallest at least, 136030.doc • 44 - 201003590 The general trend is in blue (B In the case of RGB's 3 primary colors, the film thickness is smaller than other colors. In addition, the "highest relative visibility" indicates whether the effect is caused by the occurrence of unlit defects and semi-unlit defects. High to determine the performance of the way of color. Specifically, the naked eye does not have the same sensitivity for each of the RGB3 primary colors, and the sensitivity (visibility) of each color is different. The relative visibility is a parameter that normalizes the visibility of each wavelength to the ratio of the visibility (unit: i m/w) of the wavelength showing the maximum visibility (the system (5) (four), the dark system (10) (four)). In the case of jobs, Green (G) has the highest relative visibility. In addition, Zhao (8) 2 words 'European and American people's relative visibility is relatively better than the Japanese's relative visibility and 0. Therefore, in a pixel unit showing the face of a certain color, at! pixels = production = not lit In the case of a defect, the case where the pixel is green (G), the case where the color is red (8) and the blue (10), and the case where the primary color is not known than the case of the green (6), the so-called "relative visibility ° inch color" even if It is also possible to call it green (G). As shown in Fig. 3(A), "the total number of organic multilayer films is a specific example of the problem that it is easy to become an unlit defect", and the "number of groups" is smaller than that of pixels of other colors. The equivalent monthly condition of the pixel unit part in the (8) pixel is shown in the circuit diagram. In addition, in Fig. 13 (8), as the specific relative .y, which is the highest relative visibility, an example of "έ, 疋色" is used as a horse. In the case where the number of green ((}) like the group of the symplectic is higher than the number of the other colors, the number of the groups in the pixels within the μ μ I shows 136030.doc -45· 201003590 1 pixel unit part, etc. Price circuit diagram. Figure 3 series sets more "group number" to 2, but the number only needs to be less than The number of groups is one large and is any number of two or more. In addition, the sampling transistor Ms is not included in the 'group', but may be included. The case of Fig. 13(A) is taken as an example. The main area division of the display pixel circuit in 丨4(A) is distinguished from the arrangement area of the organic light-emitting diode OLED which is different from the main area in FIG. 14(B). Thus, the elements of the pixel circuit (electrical All of the crystals, capacitors, and organic light-emitting diodes may not be disposed in the same division. The example of the arrangement of the organic light-emitting diodes 0 (4) shown in Fig. 14(B) is roughly the same area, and Figure 14 ( VIII) The arrangement of the transistors and capacitors is different. Only the "group number" is 2 blue (8) pixels are larger than the other two colors. "So, when the device circuit elements are divided and arranged, there is an increase in the number of '' Each of J easily ensures the advantage of the arrangement space of the element circuit elements. <Configuration Example of Plane and Cross Section> Here, the planar pattern and the cross-sectional structure of the pixel circuit will be described with reference to the drawings. Jingyou "number of groups" is like W! In order to make it easy to observe the pattern, the pixel circuit elements are arranged using all the areas, but in the case of increasing the number of groups, the arrangement space is enlarged by the arrangement of the area expansion. Fig. 15(A) and 15(B) shows the planar pattern of the pixel circuit 第 of the Wth and ninth rows. Fig. 15(B) omits the plan view of the uppermost cathode electrode (all-in-one), and Fig. 15(4) omits the most A plan view of the electrode of the organic light-emitting diode OLED and the organic multilayer film in the upper layer of the cathode electro-acupuncture 136030.doc -46-201003590. In addition, Fig. 16(A) is shown in Fig. 15(A) A schematic cross-sectional view of the AA line, and Fig. 16(B) is a schematic cross-sectional view of the line b_b of Fig. 15 (A) and Fig. 5 (Β). In Figs. 16(A) and 16(B), a base layer 1 (one type of insulating layer) is formed directly or via another film on a substrate made of glass or the like (not shown). In the cross section shown in Fig. 16(B), a gate electrode 11A composed of a predetermined gate metal layer (GM) such as a high melting point metal layer of molybdenum (Mo) or the like is formed on the underlayer 1B. The cross section of Fig. 16(B) shows the formation portion of the driving transistor Md of Fig. 5 and the like. However, as shown in Fig. 15 (A), gate electrodes of different sizes are formed in the same manner at the portion where the sampling transistor is formed. Further, in the cross section shown in FIG. 16(A), the first high-refining metal wiring layer 11B and the second high melting point which are formed of the gate metal layer (GM) of the same material in the same level as the gate electrode UA The metal wiring layer uc is formed on the underlying layer 1 . As shown in Fig. 15(A), the first high-metal wire layer 1 is melted in the second place: the dot metal wiring layer UC is separated in the pixel, but in the adjacent pixel ': change: 'Fig. 15(A) The first high-melting-point metal wiring layer and the sound: the other high-definition metal wiring layer 11 of one of the other sides (Fig. 15 (A) below), the second high-finished metal wiring layer 11 cr helmet m UUC (No picture is not) as a pattern of two connections ^ Question, Figure 1 5 (A), the first - 栌 栌 人 帛 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋 冋De)) is connected to the first high-melting-point metal wiring layer u in the other pixels. κ (not shown) as a pattern covering the surface of the gate electrode 11A, FIG. 16 (β), and a high melting point metal J36030.d〇, -47- 201003590, the wiring layer 11B and the second high melting point metal wiring The surface of the layer uc (in the manner of the figure, the gate insulating film 丨2 is formed entirely on the base layer 1 。. In the cross section shown in Fig. 16(B), the gate insulating film 12 is formed as amorphous As shown in FIG. 15(A), the TFT layer 13A of the driving transistor Ms is formed in the same manner as in the case of the P-channel type TFT (which may be a polysilicon).丨3 B. The regions of the source (S) and the drain (D) which are separated from each other by introducing impurities of the reverse conductivity type are formed on the TFT layer 13 A of Fig. 16(B). This is also in the TFT layer i3B. Similarly, in the gate insulating film 12, a contact hole 12 is formed in the end portion of the first-high-point metal wiring layer UB in the cross section of Fig. 16(A). Similarly, the second high-point metal is formed. A contact hole 12C is formed in the gate insulating film 12t at the end of the wiring layer 11C. One of the wiring connecting portions and a total of two contact holes 12A and 12B are connected. The first contact hole (1CH) of the high-melting-point metal wiring layer and the upper wiring layer is connected. Specifically, the end of the first high-melting-point metal wiring layer 11B is connected to the gate insulating film via the contact hole 12A. On the 12th, as shown by (8), one end of the upper wiring layer UB is formed. Further, the end portion of the second high-melting point metal wiring layer nc is connected to the other end portion of the upper wiring layer 14B provided on the interlayer insulating film 12 via the contact hole i2c. Above the first high-refining-point metal wiring layer 11B, there is provided an i, which is insulated by the interlayer insulating film 12 and separated by a high potential Vcc — 图 separated by the macro layer 1 « * /, ' and the upper wiring layer 14B. ,, mouth line (the following 'Notes as power supply line supply line vdDl). Power supply 136030.doc -48· 201003590 The voltage supply line VDDL is connected to the horizontal pixel line drive circuit 4 1 in FIG. 5 and applies a high potential Vcc_ Η and a low potential Vcc-L to the drain of the drive transistor Md. Wiring. Therefore, as shown in Fig. 15(A), the branch line of the power supply voltage supply line VDDL (indicated by the same symbol VDDL) is electrically contacted to the region which becomes the drain (D) of the TFT layer 13A with low resistance. Further, the upper electrode layer 14D of the holding capacitor Cs having the same material as the power supply voltage supply line VDDL and having the same material (aluminum (A1)) is electrically connected to a region serving as a source (S) of the driving transistor Md. As shown in Fig. 15(A), the upper electrode layer 14D and the lower electrode layer of the holding capacitor Cs continuous from the gate electrode 11A are superposed on the pattern, and this portion forms a holding capacitor Cs of a MIS (Metal Insulator Semiconductor) structure. In Fig. 16 (B), above the second high-melting-point metal wiring layer 11C, a control line SAML of the sampling transistor Ms which is insulated by the gate insulating film 12 and separated from the upper wiring layer 14B by a pattern is provided. The control line SAML is connected to the write signal scanning circuit 42 in Fig. 5, and applies wiring for writing the drive pulse WS(i) to the gate of the sampling transistor Ms. Therefore, as shown in Fig. 15(A), the control line SAML is connected to the gate electrode 11D of the lower sampling transistor Ms via the first contact hole (1HC) and the contact hole 12E. The control line SAML extends the wiring in the column direction in parallel with the power supply voltage supply line VDDL. The image signal line DTL(j) is further connected to the control line SAML, and includes a structure in which the second high-melting-point metal wiring layer 11C is bridged downward (this embodiment is referred to as a "lower bridge structure"). Similarly, the image signal line DTL(j) has a structure in which the first high-melting-point metal wiring layer 11B is bridged downward at a portion intersecting the power supply voltage supply line VDDL (lower bridge 136030.doc -49 - 201003590). Further, on the drain side of the dicing layer 13B of the sampling transistor, the upper wiring layer 14B is connected to the pattern, and the source side is connected with aluminum (A1), and the driving transistor Md of Fig. 5 is controlled. The intracellular wiring 14E of a portion of the node NDc. The intracellular wiring 14E is electrically connected to the lower electrode layer of the lower holding capacitor core via the first contact hole (ihc) and the contact hole 12F. The aluminum thus formed is buried (A1) The various wirings, that is, the power supply voltage supply line L, the control line SAML, the upper wiring layer (10), the upper electrode layer 14D, and the intra-cell wiring 14E' are integrally formed with a planarizing film for flattening these steps. 15 (refer to Fig. 16 (B)). As shown in the cross section of Fig. 16 (B), a portion of the planarizing film 15 on the upper electrode layer md is formed with a conductive material embedded in the second layer of the planarizing film 15. The anode contact of the contact hole (2HC) is 5 a. Then, sequentially stacked: an anode electrode (AE) formed on the planarization film 15 and contacting the end face of the anode contact 15A; formed on the anode electrode (AE) Above, and contains a protection of the opening 16 of the anode electrode (AE) for one week 16. Further depositing an organic multilayer film (〇ml) overlying thereon; and forming a shell-shaped cathode electrode (CE) in a pixel-occupying area; thereby forming an organic light-emitting diode OLED. With the above embodiment, In each of the pixel units, only the pixels which are the easiest to form the color of the unlit defect, or the pixels which are only the one with the highest visibility, are respectively provided with the driving transistor, the holding capacitor, and the organic light emitting diode as the complex number. The structure of the group, which is easy to be an unilluminated defect, does not act as an unlit defect, or even if it becomes an unlit defect, it is not significant. 136030.doc • 50- 201003590 is remarkable. As a result, the yield can be improved. The +I 邠 element in the group (the next day, the capacitor, the organic hair 2 diode) does not share the configuration distinction (hierarchy) of the pixel circuit elements, but in the best way of matching efficiency, such as the formation of organic light-emitting diodes The hierarchical level of the body is smaller than the level of the other components, Α έ θ _ m m — , ,, between the pixels with different numbers, the area ratio is reduced. Thereby, the allocation efficiency; ^ ancient, # η . Moreover, the wiring line and the space are properly optimized, and the benefit of reducing the yield due to the short circuit between the lines can be prevented. [Simplified description of the drawing] % / Fig. 1 shows the 眚 l 施 施 关于 关于 关于The main structural diagram of the organic EL display; Fig. 2 is a basic structural diagram of the <pixel circuit> of the K-shaped sorrow of the present invention; Fig. 3 is a diagram relating to the implementation of the present invention. ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; <Pattern of the pixel circuit of the embodiment; Fig. 6(4), called (4) is called (10), and (8), (f) shows a timing chart of various signals and voltage waveforms in the display control of the embodiment of the present invention; Figure 7 (A) - (C) is an explanatory diagram of the operation before sampling; Figure 8 (A) - (C) is an operation explanatory diagram before the second threshold correction; Figure 9 (A), 9 (B) Description of the operation before the third threshold correction; 136030.doc -51 201003590 FIG. 1 is a source potential of an embodiment of the present invention FIG. 11(A)-(C) is an operation diagram before the light-emitting period; FIG. 1 is a pixel circuit according to an embodiment of the present invention, and is short-circuited between electrodes in the organic light-emitting diode. FIG. 13(A) and FIG. 14(B) are diagrams showing a configuration of a pixel unit according to an embodiment of the present invention; FIGS. 14(A) and 14(B) are diagrams showing a pixel according to an embodiment of the present invention. 15(A) and 15(B) are plan views of a pixel circuit according to an embodiment of the present invention; and FIGS. 16(A) and 16(B) relate to the present invention. A cross-sectional view of a pixel circuit in accordance with an embodiment of the present invention. [Main component symbol description] 1 Organic EL display 2 Pixel array 3 Pixel circuit 4 Vertical drive circuit (V scanner) 5 Horizontal drive circuit (H scanner) 10 Base layer 11A Cover gate electrode 11B First high melting point metal wiring layer 11C second high melting point metal wiring layer 11D gate electrode 136030.doc -52- 201003590

12 12A, 12B, 12C, (1CH)

13A, 13B

14B

14D

14E 15

16 16A 41

42 AE B

CE

Cs

Coled.

Cgs DS(1)

D-CHG DTL(j)

G g

GND

GM gate insulating film contact hole TFT layer upper wiring layer upper electrode layer intracellular wiring flattening film protective film opening horizontal pixel line driving circuit write signal scanning circuit anode electrode blue pixel cathode electrode holding capacitor capacitance gate source Parasitic capacitance power supply driving pulse discharge during image signal line green pixel capacitance combined with ground voltage gate metal layer 136030.doc -53- 201003590

Id drive current Ids 汲 电流 current INT Initialization period LMO, LM1 illuminating period Md driving transistor Ms sampling transistor NDc control node OLED organic light emitting diode PPx ' PP image signal pulse R red pixel SPO~SP3 sampling pulse SAML control line SIG (l), SIG(2), SIG(3), SIG(j) Signal line Ssig Image signal T0-T21 Time display V Applied voltage Vo Data reference potential VDD, VSS level Vin Signal amplitude Vg Gate voltage Vgs Gate Source-to-source voltage Vs Source potential VSCANl(l), VSCAN1(2), VSCANl(i) First scan signal 136030.doc -54- 201003590 VSCAN2(1), VSCAN2(2), second scan signal VSCAN2(i Vsig data potential Vth threshold voltage Vcc-H still potential Vcc-L low potential Vth_oled. threshold voltage Γ Vcath \ VTC1 cathode potential first threshold correction period VTC2 WP second threshold correction period write pulse WAT1 First standby period WAT2 Second standby period WS(i), WS(1) Write drive pulse Ψ&amp;μ Write &amp; Move rate correction period [j μ Movement rate 136030.doc -55-

Claims (1)

201003590 VII. Patent application scope: 1_ A display device containing N (N = 3) colors including a ruler (red), G (green), and B (blue) for consecutive N pixels in each pixel a pixel unit is formed by i color, and a pixel array of the plurality of pixel units is regularly arranged; each of the N pixels includes: a sampling transistor; 保持 保持 保持 保持 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ^ Current path 'According to the drive current controlled by the above-mentioned county crystal according to the above-mentioned data relocation, the characteristic self-luminous; ^ is determined by each pixel (4) illuminating in a different pixel, in the capacity or The pixel circuit of the calendering element is the same as the pixel of the specific color thunder and the bamboo color which is not the point of redundancy, including the driving electromagnet and the holding capacitor -f ^ ^ _ ° The number of , and is more than the other colors. There are many groups, and there are two groups. • The display device of claim 1, the one of the pair or the cathode, and the seven glare elements contain the material corresponding to the color of the anode and the thickness of the organic film and the other color. It is formed in a multi-layer film structure which is easy to form; % before the 'pole'; the above-mentioned J36030.doc 201003590 3 of the total film of the plurality of organic thin films which are not lit, and the pixels of other colors in the pixels of a specific color are formed. 4. 5. 6. 8. The total film thickness is small. According to the heart device of claim 2, wherein the pixels of the other colors are in the pixels of the specific color before the ', —, In the case of a small number of consumption, the above-mentioned plural organic thin medium is described. The thickness of the pericardium is more and more, and the more the display device is as requested before! The display device in which the front color is the green (G); The above R (red) is less than the aforementioned B (blue) (G). The number of sets of pixels in comparison with the display of the green as the item 1 is loaded by -, &amp; ^ # Μ where a plurality of said pixels exist in a plurality of said groups, and the complex array is used to call the crystal . /, the use of the ground 6 has a description of the sample device, such as the eye of the item 1, in the red, in the sigh of the 像素 Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν Ν The channel guide and size, and the capacitance value of the holding capacitor, the plurality of the illuminating elements are disposed in the pixel: the same number of umbrellas-μ sliding condition is connected by the plurality of singular pieces of the driving current path in parallel The electric power is supplied to the terminals, and the respective light-emitting elements are separated. In the display device of claim 1, the pixel of the specific color is such that the combined area of the cranes provided with the light-emitting elements of the sacrificial level is substantially equal to the pixels included in the pixels of the other colors. In this way, the pixel area of the specific color is set to be larger than the pixel area of the other color. For example, in the case where the display device of the item 7 of the above-mentioned item 7 is different between the pixels of the other colors, 136030.doc 201003590, the area of the aperture portion of each of the pixels is substantially the same between the pixels, so that the pixel is made The area is different. 136030.doc