201003299 六、發明說明： 【發明所屬之技術領域】 本發明係關於適合用於製造液晶顯示裝置（Liquid Crystal Display:以下稱爲LCD)等之多階調光罩及其製造 方法、以及使用該光罩之圖案轉印方法者。 【先前技術】 於LCD領域中，薄膜電晶體液晶顯示裝置（Thin Film Transistor Liquid Crystal Display:以下稱爲 TFT-LCD)，相 f 較於CRT (陰極射線管），因爲易作成薄型、消費電力低之 優點，現在正急速地商品化中。TFT-LCD具有：將TFT配 列於各像素（配列爲矩陣狀）之構造的TFT基板、及對應 於各像素而配列紅色、綠色及藍色像素圖案的彩色濾光 • 片，在.液晶相的居中存在下，予以貼合的槪略構造。在 TFT-.LCD中，製造程序多，僅TFT基板便使用5~6片光罩 來予以製造。在此種狀況下，提出使用4片光罩來進行TFT 基板之製造的方法。 I 此方法，係指使用除了遮光部及透光部以外還有半透 光部（灰階（gray tone)部）且被稱爲多階調遮罩（或灰 階遮罩）的光罩，而藉以減少使用遮罩片數者。在此，半 透光部，係指在使用遮罩而將圖案轉印至被轉印體時，使 透過的曝光光線之透過量減低預定量，而控制被轉印體上 之光阻膜之顯影後的殘膜量的部分。 作爲在此所使用之灰階遮罩，可由JP-A-2002- 1 96474 (專利文獻1 )得知：半透光部，係以使用灰階遮罩之LCD 用曝光機之解像界限以下之微細圖案所形成之構造者。 -4- 201003299 又，過去已知有利用半透過性的半透光膜來形成半透光部 之構造者。不論是何種構造者，因爲能使在此半透光部之 曝光量減少預定量來進行曝光，而能於被轉印體上，轉印 阻劑殘膜値不同之兩個轉印圖案，所以可藉由1片灰階遮 罩來實施過去兩片份光罩的製程，藉以於製造TFT-LCD等 之電子裝置時，減少必須的遮罩片數。 又，JP-A-2007-249198 C專利文獻2)中揭示一種4階 調光罩之製造方法，係藉由微影製程，以較少的描繪次數， 能製造除了遮光部及透光部以外還有各種不同光透過率之 第1半透光部及第2半透光部的4階調光罩。 【發明内容】 於專利文獻1所揭示之灰階遮罩，係具有遮光部、透 光部及半透光部，使曝光光線透過率3階段地變化之3階 調光罩。然而，由於半透光部係藉由遮光膜之圖案所形成， 所以會對其灰階部之曝光光線透過率有限制。例如，對於 能均勻地描繪、圖案化的線寬有限制，隨著線寬變小，其 均勻性劣化，最後到達描繪界限。因此，即使打算形成較 高透過率之灰階部，也無法進行企盼的描繪、圖案化，結 果，有只能因應曝光條件來設計預定透過率以下者的麻煩。 又，依照上述專利文獻2所揭示之4階調光罩之製造 方法的話，因爲能於灰階部使用具有企盼透過率之半透光 膜，所以只要選擇其素材及膜厚，便能比較自由地設計已 具有企盼的複數透過率之灰階部。但是，隨著階調數增加， 由於必須形成新膜，所以使成膜製程增加，而有伴隨其之 缺陷發生機率上升之麻煩。再者，即使在使用半透光膜的 201003299 情況，高透過率者會受限於素材，再者，一旦膜厚變成極 薄時，膜厚的面內分布會劣化而伴隨其透過率分布也會劣 化。 因此，於製作超過3階調之多階調遮罩中，問題點在 於不增加成膜製程等，分別製作透過率不同的半透光部， 進一步地，製作具有擁有較高透過率之半透光部之多階調 遮罩。 本發明係鑑於上述過去情事所作成者，第1目的爲提 供：具有遮光部、透光部、半透光部，可作爲從前之超過 3階調之光罩而使用，擁有企盼的透過率之多階調光罩。 又，本發明之第2目的爲提供：能藉由有效率且缺陷 發生機率低之簡便製程而製造此種多階調光罩之多階調光 _ 罩的製造方法。 此外，本發明之第3目的爲提供：使用上述多階調光 罩之圖案轉印方法。 依照本發明之一態樣，能製得一種多階調光罩，其特 ί 徵爲：於透明基板上，具有由遮光部、透光部、及使曝光 光線透過率減低預定量之半透光部所構成之遮罩圖案；前 述遮光部係藉由至少於前述透明基板上所形成之遮光膜所 形成；前述透光部係露出前述透明基板所形成；前述半透 光部係至少具有：於前述透明基板上形成半透光膜而成之 第1半透光部、及於前述透明基板上，形成具有曝光條件 下之解像界限以下之線寬的微細圖案之第2半透光部；前 述第2半透光部之微細圖案包含前述半透光膜之微細圖 案、前述遮光膜之微細圖案、及未形成前述半透光膜及前 201003299 述遮光膜之微細間隙。 上述多階調光罩，具 成之第1半透光部。進一 微細圖案、遮光膜之微細 之微細間隙：形成具有曝 的微細圖案之第2半透光 藉由不具有微細圖案之半 具有微細圖案而形成。在 # 像界限以下之線寬的微細 寬，或遮光膜部分之線寬 光膜圖案間之間隙（間隔 爲曝光條件下之解像界限 _ 膜所形成之圖案或藉由遮 .形狀無法被解像程度之微 望在第2半透光部中，半 細圖案、微細間隙之線寬 L 像界限以下。 於上述多階調光罩中 成分之材料所構成，前述 爲主要成分之材料所構成 於上述多階調光罩中 透光膜及前述遮光膜而形 膜之間，可具有蝕刻阻擋 依照本發明之另一態 特徵爲：於透明基板上， 有於透明基板上形成半透光膜而 步地，亦具備：包含半透光膜之 圖案及未形成膜且露出基板表面 光條件下之解像界限以下之線寬 部。即，相對於第1半透光部係 透光膜而形成，第2半透光部係 此，所謂「具有曝光條件下之解 圖案」，係指半透光膜部分之線 ，或是，經形成於半透光膜或遮 (space))部分之線寬之任一者 以下之尺寸。亦即，藉由半透光 光膜所形成之圖案，具有其圖案 細線寬或間隔寬度。較佳爲，希 透光膜之微細圖案、遮光膜之微 之任一者，在曝光條件下，爲解 ，前述遮光膜係由以鉻作爲主要 半透光膜可爲由以金屬矽化物作 者。 ’前述遮光部係至少積層前述半 成’在前述半透光膜及前述遮光 膜(etching stopper film) ° 樣，能製得一種多階調光罩，其 具有：由遮光部、透光部、及使 201003299 曝光光線透過率減低預定量之半透光部所構成之遮罩圖 案；前述遮光部係藉由至少於前述透明基板上所形成之遮 光膜所形成；前述透光部係露出前述透明基板所形成；前 述半透光部係至少具有：於前述透明基板上形成半透光膜 而成之第1半透光部，及於前述透明基板上，具有曝光條 件下之解像界限以下之線寬的微細圖案所形成之第3半透 光部；前述第3半透光部之微細圖案係由前述半透光膜之 微細圖案及前述遮光膜之微細圖案所構成。 ' 在上述多階調光罩中，除了前述第1半透光部以外， 進一步具備：由半透光膜之微細圖案及遮光膜之微細圖案 所構成、形成具有曝光條件下之解像界限以下之線寬的微 細圖案之第3半透光部。在此第3半透光部中，所謂「具 有曝光條件下之解像界限以下之線寬的微細圖案」，係指半 透光膜部分之線寬、或遮光膜部分之線寬之任一者爲曝光 條件下之解像界限以下之尺寸。亦即，藉由半透光膜所形 成之圖案或藉由遮光膜所形成之圖案，具有其圖案形狀無 i 法被解像程度之微細線寬。又，第3半透光部不具有露出 透明基板之間隙（間隔部分）。 於上述多階調光罩中，前述遮光膜係由以鉻作爲主要 成分之材料所構成，前述半透光膜可爲由以金屬矽化物作 爲主要成分之材料所構成者。 於上述多階調光罩中，前述遮光部係至少積層前述半 透光膜及前述遮光膜而形成，在前述半透光膜及前述遮光 膜之間，可具有鈾刻阻擋膜。 依照本發明之其他態樣，能獲得一種多階調光罩之製 201003299 造方法，係於透明基板上，具有由遮光部、透光部、及使 曝光光線透過率減低預定量之半透光部所構成之遮罩圖案 的多階調光罩之製造方法，其特徵爲具有以下製程：準備 在透明基板上依序具有半透光膜及遮光膜.之光罩坯料 (Photomask blank)之製程；將形成於前述光罩坯料之前 述遮光膜上之阻劑膜進行描繪、顯影而形成預定之第1阻 劑圖案之製程；以前述第1阻劑圖案作爲遮罩而蝕刻前述 遮光膜來形成遮光膜圖案之製程；以前述第1阻劑圖案或 遮光膜圖案作爲遮罩而蝕刻前述半透光膜之製程；將在包 含經圖案化之前述遮光膜及前述半透光膜之基板上所形成 的阻劑膜進行描繪、顯影，而形成第2阻劑圖案之製程； 及以前述第2阻劑圖案作爲遮罩，將露出之前述遮光膜加 以蝕刻之製程；在前述第1阻劑圖案及第2阻劑圖案之至 少一方含有微細圖案，具有：於前述透明基板上形成半透 光膜及遮光膜之遮光部；露出前述透明基板所形成之透光 部；於前述透明基板上形成半透光膜而成之半透光部；及 C. 於前述透明基板上，具有曝光條件下之解像界限以下之線 寬之半透光膜的微細圖案、及具有曝光條件下之解像界限 以下之線寬之遮光膜的微細圖案所形成之半透光部。 在上述多階調光罩之製造方法中，前述遮光膜及前述 半透光膜可爲由有蝕刻選擇性之素材所構成者。 在上述多階調光罩之製造方法中，前述遮光膜係由以 鉻作爲主要成分之材料所構成，前述半透光膜可爲由以金 屬矽化物作爲主要成分之材料所構成者。 在上述多階調光罩之製造方法中，在前述遮光膜及前 201003299 述半透光膜之間，可具有蝕刻阻擋膜。 依照本發明之其他態樣，能獲得一種多階調光罩之製 造方法，係於透明基板上，具有由遮光部、透光部、及使 曝光光線透過率減低預定量之半透光部所構成之遮罩圖案 的多階調光罩之製造方法，其特徵爲具有以下製程：準備 在透明基板上依序具有半透光膜及遮光膜之光罩坯料之製 程；將形成於前述光罩坯料之前述遮光膜上之阻劑膜進行 描繪、顯影，而形成預定之第1阻劑圖案之製程；以前述 f 第1阻劑圖案作爲遮罩而蝕刻前述遮光膜來形成遮光膜圖 案之製程；將在包含經圖案化之前述遮光膜及前述半透光 膜之基板上所形成的阻劑膜進行描繪、顯影，而形成預定 之第2阻劑圖案之製程；及以前述第2阻劑圖案作爲遮罩， 將露出之前述半透光膜或前述遮光膜和其下之半透光膜加 以蝕刻之製程；在前述第1阻劑圖案及第2阻劑圖案之至 少一方含有微細圖案，具有：於前述透明基板上形成半透 光膜及遮光膜之遮光部；露出前述透明基板所形成之透光 i 部；於前述透明基板上形成半透光膜而成之半透光部；及 於前述透明基板上，具有曝光條件下之解像界限以下之線 寬之半透光膜的微細圖案、及具有曝光條件下之解像界限 以下之線寬之遮光膜的微細圖案所形成之半透光部。 在上述多階調光罩之製造方法中，前述遮光膜及前述 半透光膜可爲藉由有蝕刻選擇性之素材而形成者。 在上述多階調光罩之製造方法中，前述遮光膜係由以 鉻作爲主要成分之材料所構成，前述半透光膜可爲由以金 屬矽化物作爲主要成分之材料所構成者。 -10- 201003299 在上述多階調光罩之製造方法中，在前述遮光膜及前 述半透光膜之間，可具有蝕刻阻擋膜。 依照本發明之其他態樣，能獲得一種多階調光罩之製 造方法，係於透明基板上，具有由遮光部、透光部、及使 曝光光線透過率減低預定量之半透光部所構成之遮罩圖案 的多階調光罩之製造方法，其特徵爲具有以下製程：準備 在透明基板上具有遮光膜之光罩坯料之製程；將形成於前 述光罩坯料之前述遮光膜上之阻劑膜進行描繪、顯影，而 形成第1阻劑圖案之製程；以前述第1阻劑圖案作爲遮罩 而蝕刻前述遮光膜來形成遮光膜圖案之製程；在將前述第 1阻劑圖案除去之後，在包含經圖案化之前述遮光膜之基 板上形成半透光膜之製程；將形成於前述半透光膜上之阻 劑膜進行描繪、顯影而形成第2阻劑圖案之製程；及以前 述第2阻劑圖案作爲遮罩，將露出之前述半透光膜、或半 透光膜及前述遮光膜加以蝕刻之製程；在前述第1阻劑圖 案及第2阻劑圖案之至少一方含有微細圖案，具有：於前 述透明基板上形成遮光膜及半透光膜之遮光部；露出前述 透明基板所形成之透光部；於前述透明基板上形成半透光 膜而成之半透光部；及於前述透明基板上，具有曝光條件 下之解像界限以下之線寬之半透光膜的微細圖案、及具有 曝光條件下之解像界限以下之線寬之遮光膜的微細圖案所 形成之半透光部。 依照本發明之其他態樣，能製得一種多階調光罩，其 特徵爲：於透明基板上，具有由遮光部、透光部、及使曝 光光線透過率減低預定量之半透光部所構成之遮罩圖案； -11- 201003299 前述遮光部係藉由至少於前述透明基板上所形成之 所形成；前述透光部係露出前述透明基板所形成； 透光部係具有：於前述透明基板上形成半透光膜而 1半透光部，及於前述透明基板上具有曝光條件下 界限以下之線寬的微細圖案所形成之第2半透光部 半透光部：前述第2半透光部之微細圖案包含：前 光膜之微細圖案、前述遮光膜之微細圖案、及未形 半透光膜及前述遮光膜之微細間隙；前述第3半透 / 微細圖案包含：前述半透光膜之微細圖案及前述遮 \ 微細圖案。 依照本發明之其他態樣，可獲得一種圖案轉印 其特徵爲具有使用上述多階調光罩，將曝光光線照 轉印體之曝光製程，於被轉印體上形成多階調之轉EI 如上述，依照本發明，能製得一種多階調光罩 爲超過3階調之光罩來使用。 又，依照本發明之多階調光罩之製造方法，能 ί 遮光膜及半透光膜之組合，藉由光微影法，藉由有 且缺陷發生機率低的簡便製程，製造此種多階調光 發明之多階調光罩，包含高透過率之半透光部，能 製作具有企盼之透過率的半透光部。 又’依照使用本發明之多階調光罩之圖案轉印 便能實施高精度的多階調圖案轉印，又其結果，可 如TFT基板之製造等’大幅削減遮罩片數。又，如 能針對光罩上之預定的半透光部，與圖案線寬無關 被轉印體之曝光量設爲一定（使一致）。 遮光膜 前述半 成之第 之解像 或第3 述半透 成前述 光部之 光膜之 方法， 射於被 ]圖案。 ，可作 夠使用 效率地 罩。本 簡便地 方法， 使在例 後述， 地將朝 -12- 201003299 【實施方式】 以下，根據圖式來說明用於實施本發明之數個形態。 [第1實施形態] 第1圖係用以說明本發明之多階調光罩之第1實施形 態，及使用該多階調光罩之圖案轉印方法的剖面圖。 第1圖所示之多階調光罩1 〇 ’係能作爲用於製造例如 液晶顯示裝置（LCD)之薄膜電晶體（TFT)及彩色濾光片、 或電漿顯示器面板（PDP )等之多階調光罩而使用者，在第 1圖所示之被轉印體20上，形成膜厚階段或連續地不同之 阻劑圖案23者。又，第1圖中之元件符號22,係表示積層 於被轉印體20之基板21上之複數層的積層膜。 上述本實施形態之光罩10，具體而言，係構成爲具有： 遮光部11，係在使用該光罩10時，使曝光光線遮光（透過 率約爲0%);透光部12，係露出玻璃基板等之透明基板 14之表面而使曝光光線透過；第1半透光部13A、第2半 透光部13B、第3半透光部13C、第4半透光部13E、第5 I 半透光部13F、及第6半透光部13D，係將透過部12之曝 光光線透過率設爲100%時，使透過率降低爲1〇~80%左 右，較佳爲20〜70%左右之範圍，在此範圍內之曝光光線透 過率係例如7階段地不同。在本實施形態中，上述遮光部 11，係於透明基板14上依序設置光半透過性之半透光膜 16、由遮光層15a及反射防止層15b之積層所構成之遮光 膜15而予以形成。又，依上述，透光部12係露出透明基 板14表面之區域。又，上述半透光部中之第1半透光部 13A，係藉由經成膜於透明基板14上之光半透過性之半透 -13- 201003299 光膜16所形成。以使第1半透光部i3A之曝光光線透過率 成爲企盼値的方式，設定上述半透光膜16之材質及膜厚。 又’第2半透光部13B，係形成爲由上述半透光膜16之微 細圖案17、上述半透光膜16及遮光膜15之積層膜的微細 圖案18、及未形成膜的間隙部分（間隔部分）所構成，具 有曝光條件下之解像界限以下之線寬之微細圖案而予以構 成。 半透光膜微細圖案及遮光膜微細圖案，微細間隙之各 自線寬、面積比，能根據企盼的曝光光線透過率來決定。 以使第2半透光部13B之曝光光線透過率成爲企盼値 之方式’設定以上述半透光膜16所形成之微細圖案17之 線寬及/或以上述遮光膜15所形成之微細圖案18之線寬及 /或上述微細間隙（間隔部分）之線寬。進一步地，第3半 透光部13C，係形成爲由上述半透光膜16及遮光膜15之 積層膜的微細圖案18、及經形成於該微細圖案18間之上述 半透光膜16之微細圖案所構成，具有曝光條件下之解像界 限以下之線寬之微細圖案而予以構成。以使第3半透光部 13C之曝光光線透過率成爲企盼値之方式，設定以上述半 透光膜16所形成之微細圖案之線寬、及以上述遮光膜15 所形成之微細圖案18之線寬。 又，第4半透光部13E，係藉由以上述半透光膜16所 形成、曝光條件下之解像界限以下的微細圖案1 7所構成。 以使第4半透光部13E之曝光光線透過率成爲企盼値之方 式’設定以上述半透光膜16所形成之微細圖案17之線寬。 進一步地，第5半透光部13F，係藉由以上述半透光膜16 -14- 201003299 及遮光膜15之積層膜所形成、曝光條件下之解像界限以下 的微細圖案18所構成。針對第5半透光部13F亦以使曝光 光線透過率成爲企盼値之方式，設定以上述半透光膜16及 遮光膜15之積層所形成之微細圖案18之線寬。 進一步地，第6半透光部13D，不是與以上述第3半 透光部13C中之半透光膜16所形成之微細圖案的線寬、及 以遮光膜15所形成之微細圖案18的線寬爲同一寬度，而 是設定爲不同的寬度。在第1圖中，顯示由半透光膜16及 遮光膜15之積層膜所產生之微細圖案的線寬，相對於半透 光膜16之微細圖案之線寬爲寬廣的情況及狹窄的情況，此 第6半透光部13D之領域中曝光光線透過率係2階段地不 同。 因此，本實施形態之上述光罩10成爲曝光光線透過率 爲9階段地不同之9階調光罩。例如，當將透光部設爲100 %時’能使第1~6半透光部13A至13F之光透過率分別成 爲 20%、30%、40%、50%、60%、70%、80% 左右。又， 第1圖所示之遮光部11、透光部12及半透光部13A~13F 之圖案形狀只不過是一個例子。當然，參照上述態樣，第 2~6半透光部之中，例如只採用第2半透光部13B的話， 便能作爲曝光光線透過率爲4階段地不同的4階調光罩來 使用。又，第2~6半透光部之中，例如只採用第2半透光 部13B及第3半透光部13C的話，便能作爲曝光光線透過 率爲5階段地不同的5階調光罩來使用。又，在此，例如 在第2半透光部13B〜第5半透光部13F中、依區域變更微 細圖案之線寬的話（例如如第6半透光部13D)，當然可 -15- 201003299 進一步地製造多階調光罩，又，亦能使線寬連續地變 形成光透過率傾斜之半透光部。 當使用如上述的多階調光罩10,對被轉印體20進 案轉印時，在遮光部11係使曝光光線實質地不透過， 光部12係曝光光線透過，在第1~6半透光部13A~13F 應各自的光透過率而降低曝光光線。因此，經塗布於 印體20上之阻劑膜（在此爲正型光阻膜），係當圖案 後、經歷顯影時，在對應上述遮光部11之部分使膜厚 Γ 最厚。又，在對應上述第1~6半透光部13A〜13F之部 任一者均成爲比對應遮光部11之部分的膜厚薄，對應 透光部之光透過率而使膜厚階段性地變薄。又，在對 光部12的部分沒有膜。其結果，在本實施形態之光罩 係形成膜厚爲9階段地不同（其中1階段爲沒有膜） 劑圖案23。即，能使用1片多階調光罩10，而於被轉 20上轉印阻劑殘膜値不同之9個轉印圖案。又，在使 型光阻的情況，能進行考慮阻劑膜厚與上述顛倒的設 I 然後，使用第1圖所示之膜厚爲9階段地不同的 圖案23，對被轉印體20中之積層膜22之各膜依序實 刻，可藉以實施例如TFT基板之製造中過去8片份光 製程，可以比過去大幅地削減遮罩片數。 以上，係說明以本實施形態之多階調光罩1 〇作爲 純粹地9階調光罩而使用的情況，但是並非限定於此 然將光罩的構成作成例如9階調，但仍有可如以下般 效地作成超過3階調之3 ~8階調之光罩而使用之優點 第1圖所示之半透光部中，能夠選擇企盼的構成者， 化， 行圖 在透 係因 被轉 轉印 成爲 分， 各半 應透 10， 的阻 印體 用負 什。 阻劑 施蝕 罩的 例如 ，雖 、實 °即， 僅使 -16 - 201003299 用企盼的種類，形成具有企盼階調數之多階調光罩。 一般而言’在本發明所屬之多階調光罩（除了遮光部、 透光部以外還有半透光部之3階調以上之光罩）中，爲了 製得在被轉印體上具有企盼的殘膜値之阻劑圖案，而選擇 決定半透光部之曝光光線透過率。作爲此透過率，係使用 當將透光部（即透明基板露出的部分）之透過率設爲100 %時之半透過膜之透過率而規定。此係雖然針對一定以上 之寬廣區域的圖案而言，在特別指定其透過率的情況下並 無問題，但是對於某種程度以下尺寸之圖案，精確地說， 會變得無法正確地反映有助於實際的圖案轉印之曝光光 量。此係由於曝光光線之繞射的緣故，此傾向會在成爲微 小圖案時，曝光光線波長爲長時，變得顯著。然而，現況 是未就相對於圖案尺寸、及分光特性不同之光源的透過率 變化予以正確考慮。 . 具體而言，一旦於半透光部，存在含有非常狹窄寬度 之圖案形狀、及相對地寬廣區域的圖案形狀，則在半透光 部，通常應對被轉印體上之阻劑膜賦予一定殘膜値者之 處，會因由於圖案形狀而形成不同殘膜値之阻劑圖案。於 是，一旦產生超過企盼的容許範圍之殘膜値變異，便會有 成爲電子裝置製造上之不安定要素的問題。 例如，作爲薄膜電晶體用之多階調光罩，係多採用： 將相當於通道部之區域設爲半透光部，以遮光部來構成相 當於以挾持通道部之形狀鄰接源極及汲極的區域者。雖然 此光罩使用平常的i線〜g線之波長帶的曝光光線而予以曝 光，但是隨著通道部之尺寸（寬度）變小，鄰接遮光部之 -17- 201003299 境界會在實際的曝光條件下被模糊，通道部之曝光光線透 過率會變得比半透過膜之透過率低。第6圖係顯示被遮光 部A所挾持之半透光部B的圖案（同圖（1))、及該半透 光部B之透過光之光強度分布（同圖（2))者，同圖（a) 係作爲一例而顯示半透光區域之寬度爲4;zm之情況，同圖 (b )係顯示2 // m之情況。即，如第6 ( a ) 、 （ b )圖所 示，被遮光部A所挾持之半透光部B之透過光之光強度分 布，一旦其半透光部B之線寬變小，則全體地下降，波峰 f ( Peak )變低。換言之，就具有寬度狹窄的區域之圖案， 係實際上有助於曝光之透過率爲相對地低的一方，就相對 地具有線寬寬的區域之圖案，係實際有助於曝光之透過率 爲相對地高。例如，如第7圖所示，在通道寬度爲5 v m以 下，在對應該通道寬度之寬度的半透光部中，實際有助於 曝光之光線之透過率下降。 因此，造成必須將具有一定尺寸之半透光部之透過率 與其膜固有的透過率加以區別，以實際曝光光線之透過量 I 與透光部之透過量之比，作爲實效透過率而掌握。 另一方面，膜固有的透過率，係指在透明基板上之形 成該膜、充分寬廣的區域中，由該膜的組成及膜厚所決定 者。充分寬廣的區域，係指不會由於該區域之幅度變化而 使實效透過率實質地變化的區域。又，於第7圖中，藉由 半透光部B之透過光之光強度分布波峰値，代表該區域之 透過率。此部分之透過率，與當使用此多階調遮罩進行曝 光時的被轉印體上之阻劑殘膜値具有相關性。 因此’藉由因應半透光部之圖案形狀，選擇該部分之 -18- 201003299 膜構成及微細圖案，而隨其改變光透過率，可與圖案形狀 無關地，使半透光部之實效透過率成爲幾乎均一，結果， 能將使用該遮罩進行圖案轉印時之被轉印體上的阻劑膜殘 膜値成爲幾乎相同。 例如，依照本實施形態，能製得具有4個至9個階調、 作爲遮罩構成的多階調光罩。即，能製得除了透光部、遮 光部以外，還有2個至7個不同光透過率之半透光部。藉 由此例如7種類的半透光部，可於被轉印體上，形成具有 ' 各自不同阻劑殘膜値之阻劑圖案。然而，另一方面，能藉 由此例如7種類之半透光部，於被轉印體上，與圖案尺寸 不同（因此，一旦使用具有相同光透過率之半透光部，則 所形成之阻劑殘膜値便會不同）無關地，使實效透過率成 爲幾乎均一，而於被轉印體上形成具有一定阻劑殘膜値之 阻劑圖案。換言之，雖然上述半透光部13A至13F係分別 由利用半透光膜所形成的部分、利用半透光膜之微細圖案 及遮光膜之微細圖案之組合所形成的部分、利用半透光膜 〇 之微細圖案所形成之部分、及利用遮光膜之微細圖案所形 成之部分的任一者所構成，具有因應半透光部之圖案形狀 而不同之例如7種類的光透過率，但是亦可形成如具有圖 案轉印結果幾乎相同的實效透過率般之半透光部。此情 況，使本實施形態之光罩作爲3階調光罩來使用。 當然，半透光部13A至13F之中，可以將例如半透光 部13A及13B、或包含此等之複數半透光部用於具有相同 實效透過率之不同形狀的圖案，將剩餘的半透光部供予具 有不同實效透過率之圖案。此情況，使本實施形態之光罩 -19- 201003299 作爲4階調〜8階調的光罩來使用。 如以上般，因爲能使本實施形態之多階調光罩10具有 例如9個不同的光透過率，所以能純粹地作爲9階調光罩 來使用，但不限定於此，在例如與半透光部之圖案形狀無 關地，形成幾乎相同之殘膜値的阻劑圖案的情況下，可以 作爲3階調至8階調光罩來使用。此外，在本實施形態， 因爲半透光部13A至13F係分別由利用半透光膜所形成的 部分、利用半透光膜之微細圖案及遮光膜之微細圖案之組 合所形成的部分、利用半透光膜之微細圖案所形成之部 分、及利用遮光膜之微細圖案所形成之部分的任一者所構 成，所以例如半透光部1 3B能藉由於透明基板上形成使用 與半透光部13A相同之半透光膜的微細圖案、及與遮光部 11相同之遮光膜的微細圖案而簡便地製得。又，半透光部 13C(半透光部13D亦相同）能藉由於透明基板上之半透光 膜16上使用與遮光部11相同的遮光膜來形成微細圖案而 簡便地製得。進一步地，半透光部13E能藉由形成使用與 半透光部13A相同的半透光膜之微細圖案而簡便地製得， 又半透光部13F能藉由使用與遮光部11相同的遮光膜來形 成微細圖案而簡便地製得。若與例如藉由變更半透光膜材 質及膜厚來形成3種類以上的半透光部的情況相比，則在 本發明，係能調節半透光部之透過率的範圍、精度大，膜 構成單純，製造上的優勢也大。因此，本實施形態之多階 調光罩，不僅適合作爲實效上例如9階調光罩來使用的情 況，也適合作爲實效上3階調至8階調光罩來使用的情況。 又，在上述中，雖然顯示除了遮光部11及透光部12 -20- 201003299 以外，還有半透光部13A~13F之光罩，但是本發明並不限 定於此’亦可爲除了遮光部11及透光部12以外，還有從 半透光部13A〜13 F之中所任意選出之半透光部的光罩，例 如’除了遮光部11及透光部12以外，還有利用半透光膜 16而成之半透光部13A，及利用半透光膜16之微細圖案、 半透光膜16及遮光膜15之積層膜的微細圖案及此等微細 圖案間之微細間隙（間隔部分）而成之半透光部1 3 B之光 罩，或是除了遮光部11及透光部12以外，還有上述半透 ί 光部13Α及半透光部13Β，及利用上述半透光膜16及遮光 膜15之積層膜的微細圖案18和形成於該微細圖案18間之 上述半透光膜16之微細圖案而成之半透光部13C之光罩。 此情況，能作爲實效上5階調至3階調的光罩來使用。 接著，針對上述本實施形態之多階調光罩10的製造方 法加以說明。第2圖係依製程順序顯示上述第1實施形態 之多階調光罩10之製造程序之剖面圖。 使用的光罩坯料係如第2圖（a)所示，在玻璃基板等 f I 之透明基板14上，依序形成半透光膜16、及由遮光層15a 和反射防止層15b之積層所構成之遮光膜15。但是，上述 半透光膜16及上述遮光膜15,係選擇對用於鈾刻製程之蝕 刻劑有蝕刻選擇性之材質的組合。因此，作爲上述遮光層 15a，較佳地可舉出例如鉻或其化合物（例如CrN、CrO、 CrC等），作爲上述反射防止層15b，可舉出鉻系化合物（例 如CrN、CrO、CrC等）等。在此，使用Cr的遮光層、CrO 之反射防止層。再者作爲上述半透光膜16，較佳地可舉出 例如金屬矽化物，尤其是矽化鉬化合物（除了 Mo Six以外’ -21 - 201003299[Technical Field] The present invention relates to a multi-step dimming cover suitable for manufacturing a liquid crystal display device (hereinafter referred to as LCD), a method of manufacturing the same, and a method of manufacturing the same The pattern transfer method of the cover. [Prior Art] In the field of LCD, Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD), phase f is easier to make thin and consumes less power than CRT (Cathode Ray Tube) The advantages are now rapidly commoditizing. The TFT-LCD has a TFT substrate having a structure in which TFTs are arranged in respective pixels (arranged in a matrix), and color filter sheets in which red, green, and blue pixel patterns are arranged corresponding to respective pixels. A schematic structure in which the liquid crystal phase is centered and attached. In TFT-. In the LCD, there are many manufacturing processes, and only the TFT substrate is manufactured using 5 to 6 photomasks. Under such circumstances, a method of manufacturing a TFT substrate using four photomasks has been proposed. I. This method refers to the use of a mask having a semi-transmissive portion (gray tone portion) in addition to the light shielding portion and the light transmitting portion, and is called a multi-tone mask (or gray scale mask). And to reduce the number of masks used. Here, the semi-transmissive portion refers to a method of controlling the transmission amount of the transmitted exposure light by a predetermined amount when the pattern is transferred to the transfer target by using a mask, thereby controlling the photoresist film on the transfer target. The portion of the residual film amount after development. As a gray scale mask used here, it is known from JP-A-2002- 1 96474 (Patent Document 1) that the semi-transmissive portion is below the resolution limit of an exposure machine for an LCD using a gray scale mask. The constructor formed by the fine pattern. -4-201003299 Further, a structure in which a semi-transmissive portion is formed by a semi-transmissive semi-transmissive film has been known. Regardless of the structure, since the exposure amount in the semi-transmissive portion can be reduced by a predetermined amount to perform exposure, it is possible to transfer two different transfer patterns of the resist residual film on the transfer target, Therefore, the process of the past two-piece mask can be implemented by one gray scale mask, thereby reducing the number of necessary masks when manufacturing an electronic device such as a TFT-LCD. Further, a method of manufacturing a fourth-order dimming cover is disclosed in JP-A-2007-249198 C Patent Document 2), which is capable of manufacturing a light-shielding portion and a light-transmitting portion by a lithography process with a small number of drawing times. There are also a fourth-order dimming cover of a first semi-transmissive portion and a second semi-transmissive portion having different light transmittances. The gray-scale mask disclosed in Patent Document 1 is a third-order dimming cover having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion to change the exposure light transmittance in three stages. However, since the semi-transmissive portion is formed by the pattern of the light-shielding film, there is a limit to the exposure light transmittance of the gray-scale portion. For example, there is a limit to the line width which can be uniformly drawn and patterned, and as the line width becomes smaller, the uniformity deteriorates and finally reaches the drawing limit. Therefore, even if it is intended to form a gray scale portion having a high transmittance, it is impossible to draw and pattern it, and as a result, there is a problem that the predetermined transmittance can be designed in accordance with the exposure conditions. Further, according to the method for manufacturing a fourth-order dimming cover disclosed in Patent Document 2, since a semi-transmissive film having a desired transmittance can be used in the gray scale portion, it is relatively free to select a material and a film thickness. The ground design has the gray scale portion of the complex transmittance. However, as the number of tone numbers increases, since a new film must be formed, the film forming process is increased, and there is a trouble that the probability of occurrence of defects increases. Furthermore, even in the case of 201003299 using a semi-transmissive film, the high transmittance is limited by the material, and further, when the film thickness becomes extremely thin, the in-plane distribution of the film thickness is deteriorated and the transmittance distribution is also accompanied. Will deteriorate. Therefore, in the case of producing a multi-tone mask having more than three-tone modulation, the problem is that a semi-transmissive portion having a different transmittance is produced without increasing the film forming process, and further, a semi-transparent portion having a higher transmittance is produced. Multi-step mask for the light department. The present invention has been made in view of the above-mentioned past circumstances, and a first object is to provide a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, which can be used as a mask having a three-step tone in the past, and has a desired transmittance. Multi-step dimmer. Further, a second object of the present invention is to provide a method for manufacturing a multi-step dimming cover capable of producing such a multi-step dimming cover by a simple process which is efficient and has a low probability of occurrence of defects. Further, a third object of the present invention is to provide a pattern transfer method using the above multi-step dimming cover. According to an aspect of the present invention, a multi-step dimming cover can be obtained, which is characterized in that: on the transparent substrate, the light shielding portion, the light transmitting portion, and the exposure light transmittance are reduced by a predetermined amount. a mask pattern formed by the light portion; the light shielding portion is formed by a light shielding film formed on at least the transparent substrate; the light transmitting portion is formed by exposing the transparent substrate; and the semi-transmissive portion has at least: a first semi-transmissive portion formed by forming a semi-transmissive film on the transparent substrate, and a second semi-transmissive portion having a fine pattern having a line width equal to or lower than a resolution limit under exposure conditions on the transparent substrate The fine pattern of the second semi-transmissive portion includes a fine pattern of the semi-transmissive film, a fine pattern of the light-shielding film, and a fine gap in which the semi-transmissive film and the light-shielding film of the previous 201003299 are not formed. The multi-step dimmer cover has a first semi-transmissive portion. A fine pattern and a fine fine gap of the light-shielding film are formed: the second semi-transmission forming the fine pattern with exposure is formed by a semi-pattern having no fine pattern. The fine width of the line width below the # image limit, or the gap between the line width film patterns of the light-shielding film portion (the interval is the resolution boundary under the exposure condition _ the pattern formed by the film or by masking. In the second semi-transmissive portion, the line width L of the semi-fine pattern and the fine gap is equal to or less than the limit. The material of the component of the multi-step dimming cover is formed by the material of the main component being formed between the transparent film and the light shielding film in the multi-step dimmer cover, and may have an etching barrier according to the present invention. The other state is characterized in that: on the transparent substrate, a semi-transmissive film is formed on the transparent substrate, and the pattern includes a pattern of the semi-transparent film and a resolution limit under which the film is not formed and the surface light of the substrate is exposed. The line width below. In other words, the first semi-transmissive portion is formed of a light-transmissive film, and the second semi-transmissive portion is referred to as "a pattern having a pattern under exposure", which means a line of a semi-transmissive film portion, or The size below the line width formed in the semi-transparent film or the space portion. That is, the pattern formed by the semi-transmissive light film has a pattern fine line width or a space width. Preferably, any one of a fine pattern of a light-transmissive film and a light-shielding film is a solution under exposure conditions, and the light-shielding film is made of chromium as a main semi-transmissive film. . The light-shielding portion is formed by at least the above-described semi-transparent film and the light-shielding film (etching stopper film), and a multi-step dimming cover having a light-shielding portion and a light-transmitting portion can be obtained. And a mask pattern formed by reducing a light transmittance of the 201003299 by a predetermined amount of the semi-transmissive portion; the light shielding portion is formed by a light shielding film formed on at least the transparent substrate; and the transparent portion is exposed to the transparent portion The semi-transmissive portion has at least a first semi-transmissive portion formed by forming a semi-transparent film on the transparent substrate, and having a resolution limit under exposure conditions on the transparent substrate a third semi-transmissive portion formed by a fine pattern of a line width; and a fine pattern of the third semi-transmissive portion is composed of a fine pattern of the semi-transmissive film and a fine pattern of the light-shielding film. In addition to the first semi-transmissive portion, the multi-step dimming cover further includes a fine pattern of a semi-transmissive film and a fine pattern of a light-shielding film, and is formed to have a resolution limit under exposure conditions. The third semi-transmissive portion of the fine pattern of the line width. In the third semi-transmissive portion, the "fine pattern having a line width equal to or lower than the resolution limit under exposure conditions" means either the line width of the semi-transmissive film portion or the line width of the light-shielding film portion. The size is below the resolution limit under exposure conditions. That is, the pattern formed by the semi-transmissive film or the pattern formed by the light-shielding film has a fine line width in which the pattern shape is not resolved. Further, the third semi-transmissive portion does not have a gap (space portion) in which the transparent substrate is exposed. In the above multi-step dimming cover, the light-shielding film is made of a material containing chromium as a main component, and the semi-transmissive film may be composed of a material containing a metal halide as a main component. In the multi-step dimming cover, the light shielding portion is formed by laminating at least the semi-transmissive film and the light shielding film, and may have an uranium barrier film between the semi-transmissive film and the light shielding film. According to another aspect of the present invention, a multi-step dimming cover manufacturing method 201003299 can be obtained, which is formed on a transparent substrate and has a light shielding portion, a light transmitting portion, and a half-light transmission for reducing the exposure light transmittance by a predetermined amount. The manufacturing method of the multi-step dimming cover of the mask pattern formed by the part is characterized in that it has the following process: preparing a semi-transparent film and a light-shielding film sequentially on the transparent substrate. a process of a photomask blank; a process of drawing and developing a resist film formed on the light shielding film of the mask blank to form a predetermined first resist pattern; and the first resist pattern a process of etching the light-shielding film as a mask to form a light-shielding film pattern; and etching the semi-transmissive film by using the first resist pattern or the light-shielding film pattern as a mask; and the patterned light-shielding film is included And forming a second resist pattern by drawing and developing the resist film formed on the substrate of the semi-transmissive film; and etching the exposed light-shielding film by using the second resist pattern as a mask a process of forming a fine pattern on at least one of the first resist pattern and the second resist pattern, and having a light-shielding portion for forming a semi-transmissive film and a light-shielding film on the transparent substrate; and exposing the transparent substrate a light-emitting portion; a semi-transmissive portion formed by forming a semi-transparent film on the transparent substrate; and C. On the transparent substrate, a fine pattern of a semi-transmissive film having a line width equal to or lower than the resolution limit under exposure conditions, and a fine pattern of a light-shielding film having a line width equal to or lower than the resolution limit under exposure conditions Light transmitting portion. In the above method of manufacturing a multi-step dimming cover, the light shielding film and the semi-transmissive film may be formed of materials having etching selectivity. In the above method of manufacturing a multi-step dimmer, the light-shielding film is made of a material containing chromium as a main component, and the semi-transmissive film may be made of a material containing a metal halide as a main component. In the above method for manufacturing a multi-step dimming cover, an etching stopper film may be provided between the light shielding film and the semi-transparent film described in the above paragraph 201003299. According to another aspect of the present invention, a method for manufacturing a multi-step dimming cover can be obtained, which is provided on a transparent substrate and has a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing a transmittance of the exposure light by a predetermined amount. A manufacturing method of a multi-step dimming cover constituting a mask pattern, characterized in that the process comprises: preparing a photomask blank having a semi-transparent film and a light shielding film on a transparent substrate; and forming the photomask a process of drawing and developing a resist film on the light-shielding film of the blank to form a predetermined first resist pattern; and forming a light-shielding film pattern by using the f-first resist pattern as a mask to etch the light-shielding film a process of drawing and developing a resist film formed on a substrate including the patterned light-shielding film and the semi-transmissive film to form a predetermined second resist pattern; and using the second resist a pattern as a mask, wherein the exposed semi-transmissive film or the light-shielding film and the lower semi-transmissive film are etched; and at least one of the first resist pattern and the second resist pattern contains a fine pattern a light-shielding portion for forming a semi-transmissive film and a light-shielding film on the transparent substrate; a light-transmissive portion formed by exposing the transparent substrate; and a semi-transmissive portion formed by forming a semi-transparent film on the transparent substrate; And a fine pattern of a semi-transmissive film having a line width equal to or lower than a resolution limit under exposure conditions on the transparent substrate, and a fine pattern of a light-shielding film having a line width equal to or lower than a resolution limit under exposure conditions. Semi-transmissive portion. In the above method of manufacturing a multi-step dimming cover, the light shielding film and the semi-transmissive film may be formed by etching selective material. In the above method of manufacturing a multi-step dimmer, the light-shielding film is made of a material containing chromium as a main component, and the semi-transmissive film may be made of a material containing a metal halide as a main component. -10-201003299 In the above method for manufacturing a multi-step dimming cover, an etching stopper film may be provided between the light shielding film and the semi-transmissive film. According to another aspect of the present invention, a method for manufacturing a multi-step dimming cover can be obtained, which is provided on a transparent substrate and has a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing a transmittance of the exposure light by a predetermined amount. A manufacturing method of a multi-step dimming cover constituting a mask pattern, which is characterized in that: a process for preparing a photomask blank having a light-shielding film on a transparent substrate; and forming on the light-shielding film of the photomask blank a process of forming a first resist pattern by drawing and developing a resist film; forming a light-shielding film pattern by etching the light-shielding film by using the first resist pattern as a mask; and removing the first resist pattern Thereafter, a process of forming a semi-transmissive film on a substrate including the patterned light-shielding film; and a process of drawing and developing a resist film formed on the semi-transmissive film to form a second resist pattern; a process of etching the exposed semi-transmissive film or semi-transmissive film and the light-shielding film by using the second resist pattern as a mask; and the first resist pattern and the second resist pattern are One of the fine patterns includes a light-shielding portion that forms a light-shielding film and a semi-transmissive film on the transparent substrate, a light-transmitting portion formed by exposing the transparent substrate, and a semi-transparent film formed on the transparent substrate. a light portion; and a fine pattern of a semi-transmissive film having a line width equal to or lower than a resolution limit under exposure conditions on the transparent substrate; and a fine pattern of a light-shielding film having a line width equal to or lower than a resolution limit under exposure conditions The semi-transmissive portion formed. According to another aspect of the present invention, a multi-step dimming cover can be obtained, which has a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing a transmittance of exposure light by a predetermined amount on a transparent substrate. The mask pattern is formed; -11- 201003299, the light shielding portion is formed by being formed on at least the transparent substrate; the light transmitting portion is formed by exposing the transparent substrate; and the light transmitting portion is: transparent a semi-transmissive film formed on the substrate, a semi-transmissive portion, and a second semi-transmissive portion semi-transmissive portion formed on the transparent substrate having a fine pattern having a line width equal to or lower than an exposure limit: the second half The fine pattern of the light transmitting portion includes: a fine pattern of the front light film, a fine pattern of the light shielding film, and a fine gap between the unshaped semi-transmissive film and the light shielding film; and the third semi-transmissive/micro pattern includes: the semi-transparent A fine pattern of the light film and the aforementioned masking/micro pattern. According to another aspect of the present invention, a pattern transfer can be obtained which has the feature of using the multi-step dimmer to expose the exposure light to the transfer body, and forming a multi-tone on the transferred body. As described above, according to the present invention, it is possible to produce a multi-step dimmer cover for use in a mask of more than three-order tone. Moreover, according to the method for manufacturing a multi-step dimming cover of the present invention, the combination of the light-shielding film and the semi-transmissive film can be manufactured by the photolithography method by a simple process having a low probability of occurrence of defects. The multi-step dimming cover of the invention has a semi-transmissive portion with high transmittance, and can produce a semi-transmissive portion having a desired transmittance. Further, according to the pattern transfer using the multi-step dimming cover of the present invention, high-precision multi-tone pattern transfer can be performed, and as a result, the number of masks can be drastically reduced, for example, in the manufacture of a TFT substrate. Further, in the case of the predetermined semi-transmissive portion on the reticle, the exposure amount of the transfer body is set to be constant regardless of the pattern line width. The light-shielding film is the first solution of the semi-finished film or the third method of semi-transmissively forming the light film of the light portion, and is incident on the pattern. , can be used to effectively use the cover. The present invention will be described in detail below, and will be described hereinafter as -12-201003299. [Embodiment] Hereinafter, several embodiments for carrying out the invention will be described based on the drawings. [First Embodiment] Fig. 1 is a cross-sectional view showing a first embodiment of a multi-step dimming cover of the present invention and a pattern transfer method using the multi-step dimming cover. The multi-step dimming cover 1 ′′ shown in FIG. 1 can be used as a thin film transistor (TFT) and a color filter, or a plasma display panel (PDP) for manufacturing, for example, a liquid crystal display device (LCD). In the multi-step dimming cover, the user forms a resist pattern 23 having a film thickness step or a continuous shape on the transfer target body 20 shown in FIG. Further, the reference numeral 22 in Fig. 1 denotes a laminated film of a plurality of layers laminated on the substrate 21 of the transfer target body 20. Specifically, the photomask 10 of the present embodiment has a light-shielding portion 11 that shields the exposure light (the transmittance is about 0%) when the photomask 10 is used, and the light-transmitting portion 12 The surface of the transparent substrate 14 such as a glass substrate is exposed to transmit the exposure light; the first semi-transmissive portion 13A, the second semi-transmissive portion 13B, the third semi-transmissive portion 13C, the fourth semi-transmissive portion 13E, and the fifth In the semi-transmissive portion 13F and the sixth semi-transmissive portion 13D, when the exposure light transmittance of the transmissive portion 12 is 100%, the transmittance is reduced to about 1 to 80%, preferably 20 to 70. The range of about %, the exposure light transmittance in this range is different, for example, in seven stages. In the present embodiment, the light-shielding portion 11 is provided with a light-transmissive semi-transmissive film 16 and a light-shielding film 15 composed of a layer of a light-shielding layer 15a and an anti-reflection layer 15b. form. Further, as described above, the light transmitting portion 12 exposes a region of the surface of the transparent substrate 14. Further, the first semi-transmissive portion 13A of the semi-transmissive portion is formed by a semi-transmissive semi-transparent film 13-201003299 formed on the transparent substrate 14. The material and film thickness of the semi-transmissive film 16 are set such that the exposure light transmittance of the first semi-transmissive portion i3A is desired. Further, the second semi-transmissive portion 13B is formed as a fine pattern 17 of the fine pattern 17 of the semi-transmissive film 16, a laminated film of the semi-transmissive film 16 and the light-shielding film 15, and a gap portion where the film is not formed. The (interval portion) is configured to have a fine pattern of line widths below the resolution limit under exposure conditions. The semi-transparent film fine pattern and the light-shielding film fine pattern, and the respective line width and area ratio of the fine gap can be determined according to the desired transmittance light transmittance. The line width of the fine pattern 17 formed by the semi-transmissive film 16 and/or the fine pattern formed by the light-shielding film 15 are set such that the exposure light transmittance of the second semi-transmissive portion 13B is desired. The line width of 18 and/or the line width of the above-mentioned fine gap (spaced portion). Further, the third semi-transmissive portion 13C is formed as a fine pattern 18 of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 and the semi-transmissive film 16 formed between the fine patterns 18. The fine pattern is composed of a fine pattern having a line width equal to or lower than the resolution limit under exposure conditions. The line width of the fine pattern formed by the semi-transmissive film 16 and the fine pattern 18 formed by the light-shielding film 15 are set such that the exposure light transmittance of the third semi-transmissive portion 13C is desired. Line width. Further, the fourth semi-transmissive portion 13E is constituted by a fine pattern 17 which is formed by the semi-transmissive film 16 and has an image resolution limit or lower under exposure conditions. The line width of the fine pattern 17 formed by the semi-transmissive film 16 is set in such a manner that the exposure light transmittance of the fourth semi-transmissive portion 13E is desired. Further, the fifth semi-transmissive portion 13F is formed by a fine pattern 18 which is formed by the laminated film of the semi-transmissive film 16-14-201003299 and the light-shielding film 15 and which is below the resolution limit under the exposure conditions. In the fifth semi-transmissive portion 13F, the line width of the fine pattern 18 formed by laminating the semi-transmissive film 16 and the light-shielding film 15 is set so that the exposure light transmittance is desired. Further, the sixth semi-transmissive portion 13D is not the line width of the fine pattern formed by the semi-transmissive film 16 in the third semi-transmissive portion 13C, and the fine pattern 18 formed by the light shielding film 15 The line widths are the same width, but are set to different widths. In the first drawing, the line width of the fine pattern generated by the laminated film of the semi-transmissive film 16 and the light-shielding film 15 is shown, and the line width of the fine pattern of the semi-transmissive film 16 is wide and narrow. The exposure light transmittance in the field of the sixth semi-transmissive portion 13D is different in two stages. Therefore, the photomask 10 of the present embodiment has a 9th-order dimming cover having different exposure light transmittances in nine stages. For example, when the light transmitting portion is made 100%, the light transmittances of the first to sixth semi-light transmitting portions 13A to 13F can be made 20%, 30%, 40%, 50%, 60%, 70%, respectively. 80% or so. Further, the pattern shapes of the light shielding portion 11, the light transmitting portion 12, and the semi-light transmitting portions 13A to 13F shown in Fig. 1 are merely examples. As a matter of course, in the second to sixth semi-transmissive portions, for example, only the second semi-transmissive portion 13B can be used as a fourth-order dimming cover having different exposure light transmittances in four stages. . Further, among the second to sixth semi-transmissive portions, for example, only the second semi-transmissive portion 13B and the third semi-transmissive portion 13C can be used as the fifth-order dimming in which the exposure light transmittance is different in five stages. Cover to use. In the second semi-transmissive portion 13B to the fifth semi-transmissive portion 13F, for example, when the line width of the fine pattern is changed depending on the region (for example, the sixth semi-transmissive portion 13D), of course, -15- 201003299 Further, a multi-step dimming cover is further manufactured, and the line width can be continuously changed into a semi-transmissive portion in which the light transmittance is inclined. When the multi-step dimmer 10 as described above is used, when the transfer target 20 is transferred, the exposure light is substantially not transmitted through the light shielding portion 11, and the light portion 12 is exposed to light, in the first to sixth portions. The semi-transmissive portions 13A to 13F reduce the exposure light by their respective light transmittances. Therefore, the resist film (here, the positive resist film) applied to the stamp 20 has a film thickness Γ at the portion corresponding to the light-shielding portion 11 when the pattern is subjected to development. Further, any one of the first to sixth semi-transmissive portions 13A to 13F is thinner than the portion corresponding to the light-shielding portion 11, and the film thickness is changed stepwise depending on the light transmittance of the light-transmitting portion. thin. Further, there is no film in the portion of the light portion 12. As a result, in the mask of the present embodiment, the film thickness is different in nine stages (there is no film in one step). That is, one multi-step dimmer cover 10 can be used, and nine transfer patterns different in the resist residue film are transferred onto the transfer 20 . Further, in the case of the type of photoresist, the thickness of the resist film and the reversed arrangement can be considered, and then the pattern 23 having a film thickness of nine stages as shown in Fig. 1 can be used in the transfer target 20 Each of the films of the build-up film 22 is sequentially engraved, whereby a past eight-piece light process in the manufacture of a TFT substrate can be performed, for example, and the number of masks can be greatly reduced. The above description is directed to the case where the multi-step dimming cover 1 本 of the present embodiment is used as a purely 9th-order dimming cover. However, the configuration of the photomask is not limited thereto, but the configuration of the photomask is, for example, a 9th-order tone. Advantages of using a mask of 3 to 8 steps that are more than 3 steps in the following manner. Advantages of use in the semi-transmissive portion shown in Fig. 1 can be selected as desired components. It is transferred to a transfer, and each half should pass through 10, and the resist is used as a negative. For example, if the etched hood is used, only the -16 - 201003299 can be used to form a multi-step dimmer with a desired number of steps. Generally, in the multi-step dimming cover to which the present invention pertains (in addition to the light-shielding portion and the light-transmitting portion, there is a photomask having a semi-transmissive portion of 3 or more steps), in order to obtain a film on the object to be transferred The retardant film pattern of the residual film is desired, and the exposure light transmittance of the semi-transmissive portion is selected. As the transmittance, the transmittance of the semi-transmissive film when the transmittance of the light transmitting portion (i.e., the portion where the transparent substrate is exposed) is set to 100% is defined. Although this system has no problem in specifying the transmittance of a pattern of a certain area or more, it is not possible to accurately reflect the pattern of a certain size or less. The amount of exposure light transferred to the actual pattern. This is due to the diffraction of the exposure light, and this tendency becomes remarkable when the wavelength of the exposure light is long when it becomes a micro pattern. However, the current situation is that the transmittance change of the light source with respect to the pattern size and the spectral characteristics is not correctly considered. . Specifically, when the semi-transmissive portion has a pattern shape having a very narrow width and a pattern shape having a relatively wide region, the semi-transmissive portion is usually provided with a certain residual amount in the resist film on the transfer target. In the case of the film, the resist pattern of different residual film defects is formed due to the shape of the pattern. Therefore, once the residual film enthalpy variation exceeding the expected range is generated, there is a problem that it becomes an unstable factor in the manufacture of electronic devices. For example, a multi-step dimming cover for a thin film transistor is generally used: a region corresponding to a channel portion is a semi-transmissive portion, and a light-shielding portion is configured to be adjacent to a source and a crucible in a shape of a holding channel portion. Extreme area. Although the mask is exposed using the exposure light of the usual wavelength band of the i-line to the g-line, as the size (width) of the channel portion becomes smaller, the -17-201003299 boundary adjacent to the light-shielding portion is in actual exposure conditions. The lower portion is blurred, and the transmittance of the exposure light of the channel portion becomes lower than that of the semi-transmissive film. Fig. 6 is a view showing a pattern of the semi-transmissive portion B held by the light-shielding portion A (the same figure (1)) and a light intensity distribution of the transmitted light of the semi-transmissive portion B (the same figure (2)). The same figure (a) shows an example in which the width of the semi-transmissive region is 4; zm, and the case of Fig. (b) shows 2 // m. In other words, as shown in the sixth (a) and (b), the light intensity distribution of the transmitted light of the semi-transmissive portion B held by the light-shielding portion A becomes smaller as the line width of the semi-transmissive portion B becomes smaller. As a whole, the peak f (Peak) becomes lower. In other words, a pattern having a region having a narrow width actually contributes to a relatively low transmittance of the exposure, and a pattern having a relatively wide line width is actually contributing to the transmittance of the exposure. Relatively high. For example, as shown in Fig. 7, in the semi-transmissive portion having a width of the channel width of 5 v or less, the transmittance of light which actually contributes to exposure is lowered. Therefore, it is necessary to distinguish the transmittance of the semi-transmissive portion having a certain size from the transmittance inherent to the film, and to grasp the ratio of the transmittance I of the actual exposure light to the permeation amount of the transmissive portion as the effective transmittance. On the other hand, the transmittance inherent to the film is determined by the composition and film thickness of the film in a region which is formed on the transparent substrate and which is sufficiently wide. A sufficiently broad area is an area that does not substantially change the effective transmission rate due to the magnitude of the change in the area. Further, in Fig. 7, the light intensity distribution peak 透过 of the transmitted light by the semi-transmissive portion B represents the transmittance of the region. The transmittance of this portion is correlated with the resist residual film on the transfer target when the multi-tone mask is used for exposure. Therefore, by selecting the film structure and the fine pattern of the portion -18-201003299 in response to the pattern shape of the semi-transmissive portion, the light transmittance can be changed, and the semi-transmissive portion can be effectively transmitted regardless of the pattern shape. The rate is almost uniform, and as a result, the residual film of the resist film on the transfer target when the pattern is transferred by the mask can be made almost the same. For example, according to the present embodiment, a multi-step dimming cover having four to nine tones and being configured as a mask can be obtained. In other words, it is possible to obtain a semi-transmissive portion having two to seven different light transmittances in addition to the light transmitting portion and the light shielding portion. Thus, for example, seven types of semi-transmissive portions can form a resist pattern having 'respectively different resist residual films" on the transfer target. On the other hand, however, it is possible to form a semi-transmissive portion of, for example, seven types of light transmissive bodies different from the pattern size (thus, once a semi-transmissive portion having the same light transmittance is used, the formed portion is formed. The residual film of the resist is different.) The effective transmittance is almost uniform, and a resist pattern having a certain residual film of the resist is formed on the transferred body. In other words, the semi-transmissive portions 13A to 13F are respectively formed of a portion formed by a semi-transmissive film, a portion formed by a combination of a fine pattern of a semi-transmissive film and a fine pattern of a light-shielding film, and a semi-transparent film. Any one of the portion formed by the fine pattern of the enamel and the portion formed by the fine pattern of the light-shielding film has a light transmittance of, for example, seven types depending on the pattern shape of the semi-transmissive portion, but may be A semi-transmissive portion is formed which has almost the same effective transmittance as the pattern transfer result. In this case, the photomask of the present embodiment is used as a third-order dimming cover. Of course, among the semi-transmissive portions 13A to 13F, for example, the semi-transmissive portions 13A and 13B, or a plurality of semi-transmissive portions including the same, may be used for patterns having different shapes of the same effective transmittance, and the remaining half may be used. The light transmitting portion is provided with patterns having different effective transmittances. In this case, the mask -19-201003299 of the present embodiment is used as a mask of 4th to 8th. As described above, since the multi-step dimmer cover 10 of the present embodiment can have, for example, nine different light transmittances, it can be used purely as a 9th-order dimming cover, but is not limited thereto, for example, When the resist pattern of almost the same residual film is formed irrespective of the pattern shape of the light transmitting portion, it can be used as a third-order to eighth-order dimming cover. Further, in the present embodiment, the semi-transmissive portions 13A to 13F are respectively formed by a portion formed by a semi-transmissive film, a combination of a fine pattern of a semi-transmissive film, and a fine pattern of a light-shielding film. The portion formed by the fine pattern of the semi-transmissive film and the portion formed by the fine pattern of the light-shielding film are formed. Therefore, for example, the semi-transmissive portion 13B can be formed by using and semi-transparent on the transparent substrate. The fine pattern of the semi-transmissive film of the same portion 13A and the fine pattern of the light-shielding film similar to the light-shielding portion 11 are simply produced. Further, the semi-transmissive portion 13C (the same as the semi-transmissive portion 13D) can be easily produced by forming a fine pattern on the semi-transmissive film 16 on the transparent substrate by using the same light-shielding film as the light-shielding portion 11. Further, the semi-transmissive portion 13E can be easily produced by forming a fine pattern using the same semi-transmissive film as the semi-transmissive portion 13A, and the semi-transmissive portion 13F can be the same as the light-shielding portion 11 The light-shielding film is formed in a simple manner by forming a fine pattern. Compared with the case where three or more types of semi-transmissive portions are formed by changing the material and thickness of the semi-transmissive film, for example, in the present invention, it is possible to adjust the range and accuracy of the transmittance of the semi-transmissive portion. The film is simple in composition and has a large manufacturing advantage. Therefore, the multi-step dimmer of the present embodiment is not only suitable for use as an effective 9-step dimming mask, but also suitable for use as an effective third-order dimming to an eighth-order dimming cover. Further, in the above, although the masks of the semi-transmissive portions 13A to 13F are displayed in addition to the light shielding portion 11 and the light transmitting portions 12 -20 to 201003299, the present invention is not limited thereto. In addition to the portion 11 and the light transmitting portion 12, a mask that is arbitrarily selected from the semi-transmissive portions 13A to 13F, for example, "except for the light shielding portion 11 and the light transmitting portion 12, The semi-transmissive portion 13A formed by the semi-transmissive film 16 and the fine pattern of the laminated film using the fine pattern of the semi-transmissive film 16, the semi-transmissive film 16 and the light-shielding film 15, and the fine gap between the fine patterns ( a light-shielding portion of the semi-transmissive portion 1 3 B or a light-shielding portion 11 and a light-transmitting portion 12, and the semi-transparent light portion 13 and the semi-transmissive portion 13A, and the use of the above-mentioned half A fine mask 18 of the laminated film of the light-transmitting film 16 and the light-shielding film 15 and a mask of the semi-transmissive portion 13C formed by the fine pattern of the semi-transmissive film 16 formed between the fine patterns 18. In this case, it can be used as a mask for the fifth-order to third-order adjustment. Next, a method of manufacturing the multi-step dimming cover 10 of the above-described embodiment will be described. Fig. 2 is a cross-sectional view showing the manufacturing procedure of the multi-step dimmer 10 of the first embodiment described above in the order of processing. As shown in Fig. 2(a), the mask blank used is formed by sequentially forming a semi-transmissive film 16 on a transparent substrate 14 such as a glass substrate, and a laminate of the light shielding layer 15a and the reflection preventing layer 15b. A light shielding film 15 is formed. However, the semi-transmissive film 16 and the light-shielding film 15 described above are selected as a combination of materials having etching selectivity for an etchant for an uranium engraving process. Therefore, as the light shielding layer 15a, for example, chromium or a compound thereof (for example, CrN, CrO, CrC, or the like) is preferable, and examples of the antireflection layer 15b include chromium compounds (for example, CrN, CrO, CrC, etc.). )Wait. Here, a light shielding layer of Cr and an antireflection layer of CrO are used. Further, as the semi-transmissive film 16, preferably, for example, a metal telluride, particularly a molybdenum telluride compound (except Mo Six) - 21 - 201003299
MoSi之氮化物、氧化物、氮氧化物、碳化物等）等。上述 半透光膜16較佳爲相對於透明基板14(透光部）之曝光光 線之透過量，具有1〇~80%左右，較佳爲20~70%左右之透 過量者。在此，使用膜透過率40% (將透光部設爲100% 時）之MoSix膜。 首先，於上述光罩坯料上塗布阻劑而形成阻劑膜，進 行第1次描繪。在本實施形態使用例如雷射光。又，使用 正型光阻作爲上述阻劑。然後，對阻劑膜，描繪預定的圖 案，在描繪後進行顯影，藉以形成第1阻劑圖案30a~ 30c (參照第2圖（b ))。該第1阻劑圖案30a、30c，係覆蓋 所製造之光罩的遮光部11、第1半透光部13A、第3半透 光部13C及第6半透光部13D之區域，第1阻劑圖案3 0b， 包含用於在第2半透光部13B、及第4、第5半透光部13E、 13F之區域形成預定之微細圖案的阻劑圖案。 又，構成光罩之第2半透光部13B之上述半透光膜16 之微細及上述半透光膜16和上述遮光膜15之積層膜的微 細圖案、構成第3半透光部13C及第6半透光部13D之上 述半透光膜16和遮光膜15之積層膜的微細圖案18和形成 於該微細圖案18間之上述半透光膜16的微細圖案、構成 第4半透光部13E之上述半透光膜16的微細圖案、及構成 第5半透光部13F之上述半透光膜16和上述遮光膜15之 積層膜的微細圖案之任一者係在使用光罩之曝光條件下解 像界限以下的微細圖案，且以使第1半透光部13A之曝光 光線透過率成爲企盼値的方式，設定上述半透光膜之膜透 過率（作爲膜之固有透過率，即，端視膜素材及膜厚而定）， -22- 201003299 同時以使第2〜第6半透光部13B~13F之各自曝光光線透過 率成爲企盼値的方式，設定上述微細圖案之各自線寬。 接著，以上述第1阻劑圖案30a~30c作爲蝕刻遮罩而 將由遮光層15a及反射防止層15b之積層所構成之遮光膜 15加以蝕刻來形成遮光膜圖案（參照第2圖（c))。使用 以鉻作爲主要成分之遮光膜1 5的情況，作爲蝕刻手段可爲 乾蝕刻或濕蝕刻之任一者，但在例如使用於製造大型液晶 顯示面板之大型尺寸的光罩中，適合使用濕蝕刻。在濕蝕 I 刻中，使用例如硝酸姉銨（Π )作爲蝕刻液。又，上述遮 光膜15及其下之半透光膜16較佳爲以相互對預定的蝕刻 劑具有蝕刻選擇性之材質來予以形成。此情況，在蝕刻上 述遮光膜15時難以將上述半透光膜16予以蝕刻。 將殘存的第1阻劑圖案30除去後（參照第2圖（d)) (或是可在接著的半透光膜16之鈾刻製程結束後加以除 去），將在上述所形成之遮光膜圖案作爲遮罩，蝕刻下層 之半透光膜16 (參照第2圖（e ))。使用以例如矽化鉬化 I; 合物作爲主要成分之半透光膜16的情況，作爲蝕刻手段， 可爲乾蝕刻或是濕蝕刻之任一者，在濕蝕刻中，使用以例 如氟化氫銨作爲主要成分者作爲蝕刻液。 接著，再度全面地形成與上述相同的阻劑膜，進行第 2次描繪。即，藉由對此阻劑膜描繪預定圖案，在描繪後 進行顯影，形成第2阻劑圖案31a~31d(參照第2圖（〇)。 該第2阻劑圖案31a及31b，係覆蓋所製造之光罩的遮光部 11區域，同時以覆蓋上述半透光膜16及上述遮光膜15之 積層膜的微細圖案所形成之第5半透光部13F的區域之方 -23- 201003299 式予以形成。又，第2阻劑圖案3 1 c，係以覆 光罩的第2半透光部13B之區域所形成之微 終形成半透光膜16及遮光膜15之積層膜的 細圖案與其兩側之微細間隙（間隔區域）之方 3ld係用於在第3半透光部13C及第6半透 域形成預定微細圖案之阻劑圖案。 又，在此，適合將覆蓋半透光膜16及速 層膜的微細圖案所形成之第5半透光部13F 1 劑圖案31b的寬度，形成爲比該區域寬度寬 (f)中元件符號31e所示部分）。藉此，在 2阻劑圖案而進行第2次描繪時，假定發生對 案之對位（alignment )偏差的情況下，能防止 可良好地維持微細圖案的CD精度。因此， 光部13F之透過率超出容許範圍而發生偏差 藉由加工第2阻劑圖案3 1 b之圖案資料，形 寬的阻劑圖案，決定此時放大尺寸之邊際（ I 之際，較佳爲當將所假設的對位偏差量算入 含整數個上述積層膜之微細圖案般來設定阻 同樣的對位偏差對策亦能使用於其他態樣。 接著，以上述第2阻劑圖案31a~31d作 露出區域上之遮光膜15及遮光膜15之微細 刻（參照第2圖（g ))。此情況之蝕刻條件 製程相同。由於相對於此遮光膜15之蝕刻條 透光膜16具有蝕刻選擇性，所以上述半透3 蝕刻。 蓋在所製造之 細圖案中、最 微細圖案之微 「式予以形成， 光部13D之區 I光膜15之積 區域的第2阻 (參照第2圖 當爲了形成第 第1次描繪圖 .該對位偏差， 能夠防止半透 。又，在此， 成上述之寬度 margin )寬度 時，確實地包 劑圖案寬度。 爲遮罩，將已 圖案同時地蝕 可與上述（c ) :件，其下之半 膜1 6難以被 -24- 201003299 然後，將殘存之第2阻劑圖案31a〜31d除去。這樣 來，能完成如下之曝光光線透過率爲例如9階段不同的 階調光罩1〇(參照第2圖（h))，其係於透明基板14 形成具有：利用半透光膜16、和由遮光層15a及反射防 層15b所構成之遮光膜15之積層而成之遮光部11;露出 明基板14之透光部12;及，利用上述半透光膜16而成 第1半透光部13A;利用由與上述相同的半透光膜16之 細圖案17、與上述遮光部相同的半透光膜16和遮光膜 之積層膜的微細圖案18、和微細間隙（間隔部分）所構 之具有曝光條件下之解像界限以下之線寬的微細圖案而 之第2半透光部13B;利用由上述半透光膜16和遮光膜 之積層膜的微細圖案18、和形成於該微細圖案18間之上 半透光膜16之微細圖案所構成之具有曝光條件下之解 界限以下之線寬的微細圖案而成之第3半透光部13C; 用以與上述相同之半透光膜16所形成之曝光條件下之 像界限以下之微細圖案1 7而成之第4半透光部1 3E ;利 以與上述遮光部相同的半透光膜16及遮光膜15之積層 所形成之曝光條件下之解像界限以下之微細圖案18而 的第5半透光部13F;以及，上述第3半透光部13C中 形成爲與以半透光膜16所形成之微細圖案的線寬、及以 光膜15所形成之微細圖案18的線寬不同的寬度之第6 透光部13D。在此，例如於第2半透光部138~第5半透 部13F’只要依區域而變更微細圖案的線寬，便可進一 地製造多階調光罩。該情況，製造程序能直接以上述來 行。 上 止 透 之 微 15 成 成 15 述 像 利 解 用 膜 成 之 遮 半 光 步 進 -25- 201003299 只要如以上般依照本實施形態之多階調光罩的製造方 法，便能使用遮光膜及半透光膜的組合，藉由光微影法， 而精度良好地一起形成利用半透光膜而成之半透光部、'及 分別利用半透光膜之微細圖案及/或遮光膜之微細圖案而 成之半透光部，因爲能藉由有效率地、且缺陷發生機率低 的簡便製程來製造上述多階調光罩，所以量產上的優勢大。 又’一旦實施使用如前述第1圖所示之本發明之多階 調光罩之圖案轉印，便能在被轉印體形成具有企盼阻劑殘 膜値、精度高的多階調轉印圖案。 又，在上述中，於遮光膜15及半透光膜16,係使用有 相互蝕刻選擇性的膜。另一方面，在對遮光膜15及半透光 膜1 6沒有充分蝕刻選擇性的情況，可以在兩者間導入蝕刻 阻擋膜。此情況，可皆以由鉻或鉻化合物所構成之膜來作 爲遮光膜15、及半透光膜16,將矽化鉬及二氧化矽等使用 於蝕刻阻擋膜。 又’第2圖所示之本發明之多階調遮罩，係亦可變更 其製造程序而如第3圖來製造。在此，相對於在前述第2 圖，以第1阻劑圖案（或以其作爲遮罩而蝕刻之遮光膜圖 案）作爲遮罩而蝕刻半透光膜，僅蝕刻遮光膜。進一步地， 在以第2阻劑圖案作爲遮罩’替代蝕刻遮光膜而蝕刻半透 光膜方面係不同的。又，在此，較佳爲第2阻劑圖案包含 至少遮光部的一部分，更佳爲，如第3圖，在鄰接透光部 之遮光部，較佳爲有不包含於第2阻劑圖案的部分。一旦 如此進行，便可抑制微細圖案中之對位偏差及遮光膜損害 的影響。 -26- 201003299 [第2實施形態] 接著，依據第4圖說明本發明的第2實施形態。第4 圖係依製程順序顯示第2實施形態之多階調光罩10之製造 程序之剖面圖。又，對與顯示前述第1實施形態之第1圖 及第2圖同等的部位賦予相同的元件符號。 使用之光罩坯料，如第4圖（a)所示，於玻璃基板等 之透明基板14上，形成由遮光層15a及反射防止層15b之 積層所構成的遮光膜15。作爲上述遮光層15a，較佳爲可 舉出例如鉻或其化合物（例如CrN、CrO、CrC等），作爲 上述反射防止層15b，可舉出鉻系化合物（例如CrN、CrO、 CrC等）等。 首先，於上述光罩坯料上塗布阻劑而形成阻劑膜，進 行第1次描繪。使用正型光阻作爲上述阻劑。然後，對阻 劑膜描繪預定的圖案，在描繪後進行顯影，藉以形成第1 阻劑圖案32a~32d (參照第4圖（b ))。 該第1阻劑圖案32a，係覆蓋所製造之光罩的遮光部 11、透光部12、及第5半透光部13F的區域，第1阻劑圖 案3 2b係用於在第4半透光部13E之區域形成預定微細圖 案之阻劑圖案。又，第1阻劑圖案32c係用於在第2半透 光部13B之區域形成半透光膜之微細圖案之阻劑圖案，又 32d係用於在第3、第6半透光部13C、13D之區域形成半 透光膜之微細圖案的阻劑圖案。 接著，以上述第1阻劑圖案3 2 a〜3 2 d作爲蝕刻遮罩而 蝕刻由遮光層15a及反射防止層15b之積層所構成的遮光 膜15來形成遮光膜圖案（參照第4圖（c))。使用以鉻 -27- 201003299 作爲主要成分之遮光膜15的情況，作爲蝕刻手段，雖然可 爲乾蝕刻或濕蝕刻之任一者，但在適合於製造例如大型尺 寸的光罩的濕蝕刻中，使用例如硝酸鈽銨（Π )作爲蝕刻 液。 在將殘存的第1阻劑圖案32a~32d除去後（參照第4 圖（d))，將半透光膜16成膜於包含經圖案化的遮光膜 15的基板整面（參照第4圖（e))。 作爲上述半透光膜1 6，係與例如前述實施形態相同， f 較佳地可舉出金屬矽化物化合物、尤其是矽化鉬化合物（除 了 MoSix以外，還有MoSi之氮化物、氧化物、氮氧化物、 碳化物等）。又，在本實施形態，上述半透光膜16，由於 未特地要求與遮光膜1 5之蝕刻選擇性，所以能例如與遮光 膜相同，使用鉻或鉻系化合物。針對鉻系化合物，有氧化 鉻（CrOx)、氮化鉻（CrNx)、碳化鉻（CrCx)、氮氧化 鉻（CrOxN)、氟化鉻（CrFx)、及於此等中含有碳及氫者。 上述半透光膜16較佳爲，相對於透明基板14(透光部）之 I 曝光光線之透過量，具有10~80%左右，較佳爲20~70%左 右之透過量者》 接著，再度於整面上形成與上述相同的阻劑膜，進行 第2次描繪。即，對此阻劑膜，描繪預定的圖案，在描繪 後進行顯影，藉以形成第2阻劑圖案33a~33d (參照第4圖 (f))。該第2阻劑圖案33a，覆蓋所製造的光罩之遮光 部11及第1半透光部13A之區域，33b覆蓋於第4半透光 部13E之區域所形成之微細圖案中半透光膜16的微細圖 案，進一步地包含用於將預定微細圖案形成於第5半透光 -28- 201003299 部13F之區域的阻劑圖案。又，第2阻劑圖案33c，包含用 於在第2半透光部13B之區域形成遮光膜之微細圖案的阻 劑圖案’又33d係覆蓋第3、第6半透光部13C、13D之區 域的阻劑圖案。 在此’在例如於第4半透光部13E之區域所形成的微 細圖案中、形成將半透光膜16之微細圖案加以覆蓋的阻劑 圖案33b用之描繪製程中，與上述第1次描繪之對位變得 重要。一旦發生位置偏差，則遮光膜恐怕會殘存於利用經 圖案加工之半透光膜16所形成之偏差的半透光部13E。 又，在前述第1實施形態中之製造方法，可謂在減輕此對 位課題方面係優良的。 接著，以上述第2阻劑圖案33a~33d作爲遮罩，連續 蝕刻露出之區域上的半透光膜16及其下層的遮光膜15(參 照第4圖（g))。 然後，將殘存之第2阻劑圖案33a〜33d除去。如此一 來，能完成如下之曝光光線透過率爲例如9階段不同的9 階調光罩10 (參照第4圖（h))，其係在透明基板14上 形成具有：利用由遮光層15a及反射防止層15b所構成之 遮光膜15、和半透光膜16之積層而成之遮光部11;露出 透明基板14之透光部12;及，利用上述半透光膜16而成 之第1半透光部13A;利用由與上述相同的半透光膜16之 微紬圖案17、與上述遮光部相同的遮光膜15和半透光膜 16之積層膜的微細圖案18、和微細間隙（間隔部分）所構 成之具有曝光條件下之解像界限以下之線寬的微細圖案而 成之第2半透光部13B;利用由上述遮光膜15和半透光膜 -29- 201003299 16之積層膜的微細圖案18、和形成於該微細圖案18間之 上述半透光膜16之微細圖案所構成之具有曝光條件下之 解像界限以下之線寬的微細圖案而成之第3半透光部 1 3C ;利用以與上述相同之半透光膜1 6所形成之曝光條件 下之解像界限以下之微細圖案17而成之第4半透光部 13E ;利用以與上述遮光部相同的遮光膜15及半透光膜16 之積層膜所形成之曝光條件下之解像界限以下之微細圖案 18而成的第5半透光部13F;以及，上述第3半透光部13C ： 中之形成爲與以半透光膜1 6所形成之微細圖案的線寬、及 以遮光膜15所形成之微細圖案18的線寬不同的寬度之第6 半透光部1 3 D。 [第3實施形態] 接著，依照第5圖說明本發明之第3實施形態。第5 圖係依製程順序顯示第3實施形態之多階調光罩之製造程 序之剖面圖。又，對與顯示前述第1實施形態之第1圖、 第2圖同等的部位賦予相同的元件符號。 I 使用之光罩坯料（第5圖（a))，與第4圖（a)相 同，在玻璃基板等之透明基板14上，形成由遮光層15a及 反射防止層15b之積層所構成之遮光膜15» 首先，於上述光罩坯料上塗布阻劑而形成阻劑膜，進 行第1次描繪。使用正型光阻作爲上述阻劑。然後，對阻 劑膜描繪預定的圖案，在描繪後進行顯影，藉以形成第1 阻劑圖案34 (參照第5圖（b))。 該第1阻劑圖案34,係覆蓋所製造之光罩的遮光部11 之區域，同時包含用於在半透光部13B~13D、13F之區域形 -30- .201003299 成各自預定的微細圖案之阻劑圖案。 接著，以上述第1阻劑圖案34作爲蝕刻遮罩而蝕刻由 遮光層15a及反射防止層15b之積層所構成的遮光膜15來 形成遮光膜圖案（參照第5圖（c))。使用以鉻作爲主要 成分之遮光膜15的情況，作爲蝕刻手段，雖然可爲乾蝕刻 或濕蝕刻之任一者，但在適合於製造例如大型尺寸的光罩 的濕蝕刻中，使用例如硝酸铈銨（Π )作爲蝕刻液。 在將殘存的第1阻劑圖案34除去後（參照第5圖（d))， Γ 將半透光膜16成膜於包含經圖案化的遮光膜15的基板整 面（參照第5圖（e))。 作爲上述半透光膜16，係使用例如與前述第2實施形 態相同者。上述半透光膜1 6較佳爲相對於透明基板1 4 (透 光部）之曝光光線之透過量，具有10〜80%左右，較佳爲 20〜70%左右之透過量者。 接著，再度於整面上形成與上述相同的阻劑膜，進行 第2次描繪。即，對此阻劑膜，描繪預定的圖案，在描繪 ί 後進行顯影，藉以形成第2阻劑圖案35(參照第5圖（f))。 該第2阻劑圖案35包含：覆蓋所製造之光罩的遮光部π 及半透光部13Α的區域，同時覆蓋形成於半透光部13C、 13D之區域之微細圖案的阻劑圖案；用於覆蓋在半透光部 13Β之區域所形成的遮光膜之微細圖案，同時將半透光膜 之微細圖案形成於遮光膜之微細圖案間的阻劑圖案；用於 在半透光部13Ε之區域形成半透光膜之微細圖案的阻劑圖 案；及覆蓋在半透光部13F之區域所形成之遮光膜的微細 圖案的阻劑圖案。 ’ -31 - 201003299 接著以上述第2阻劑圖案35作爲遮罩，將露出區域上 的半透光膜16加以蝕刻（參照第5圖（g))。 然後，將殘存之第2阻劑圖案35除去。如此一來，能 完成如下之曝光光線透過率爲例如9階段不同的9階調光 罩1〇(參照第5圖（h))，其係在透明基板14上形成具 有：利用由遮光層15a及反射防止層15b所構成之遮光膜 15、和半透光膜16之積層而成之遮光部11;露出透明基板 14之透光部12;及，利用上述半透光膜16而成之第1半 透光部13A;利用由與上述相同的半透光膜16之微細圖案 17、與上述遮光部相同的遮光膜15和半透光膜16之積層 膜的微細圖案1 8、和間隙部分（間隔部分）所構成之具有 曝光條件下之解像界限以下之線寬的微細圖案而成之第2 半透光部13B;利用由上述遮光膜15和半透光膜16之積 層膜的微細圖案18、和形成於該微細圖案18間之上述半透 光膜16之微細圖案所構成之具有曝光條件下之解像界限 以下之線寬的微細圖案而成之第3半透光部13C;利用以 與上述相同之半透光膜16所形成之曝光條件下之解像界 限以下之微細圖案17而成之第4半透光部13E;利用以與 上述遮光部相同的遮光膜15及半透光膜16之積層膜所形 成之曝光條件下之解像界限以下之微細圖案18而成的第5 半透光部13F;以及，上述第3半透光部13C中之形成爲 與以半透光膜16所形成之微細圖案的線寬、及以遮光膜15 所形成之微細圖案18的線寬不同的寬度之第6半透光部 13D。 在如以上般由本實施形態所產生之多階調光罩的製造 -32- 201003299 方法中，使用遮光膜及半透光膜的組合，藉由光微影法， 而精度良好地一起形成利用半透光膜而成之半透光部、及 分別利用半透光膜之微細圖案及遮光膜之微細圖案而成之 半透光部，能藉由有效率地、且缺陷發生機率低的簡便製 程來製造上述多階調光罩。 又，可使用上述實施形態中任一者來製作本發明之光 罩。又若與此等比較，在第2、第3實施形態中，在第2 次描繪時，會成爲在半透光膜上之阻劑描繪微細圖案，此 4 半透光膜，係因應製品之各式各樣透過率的半透光膜。因 此，各自地，半透光膜的膜質、膜厚不同，所以反射光強 度亦不同的情況，於描繪微細圖案之際，必須極精緻地進 行線寬、即曝光光線光量的控制。另一方面，在第1實施 形態，用以形成微細圖案的描繪，因爲係在遮光膜（含反 射防止膜）上進行，所以能以一定的描繪條件實現預定線 寬。因此，有容易生產更穩定透過率之多階調光罩的優點。 又，依照第3實施形態（第5圖），在由遮光膜及半 ί』 透光膜所形成之微細圖案所構成之半透光部中，藉由第1 次描繪，劃定包含微細圖案之半透光部之膜圖案的線寬， 且不須要對透過率會因製品而異之半透光膜上描繪，所以 能精度良好地形成微細圖案，有透過率容易控制的優點。 又，在上述第1實施形態使用之矽化鉬系半透光膜， 爲了製得20~70%的透過率之膜厚係薄的（1〇〜200 Α左 右），由側鈾刻所造成之CD劣化的顧慮非常小，所以本 發明的效果特別顯著。 又，本發明之多階調光罩之製造方法，並不限定於上 -33- 201003299 述例示者。 【圖式簡單說明】 第1圖係用以說明本發明之多階調光罩之第1實施形 態，及使用該多階調光罩之圖案轉印方法的剖面圖。 第2圖係依製程順序顯示上述第1實施形態之多階調 光罩之製造程序之剖面圖。 第3圖係依製程順序顯示第1實施形態之多階調光罩 之其他製造程序之剖面圖。 ί 第4圖係依製程順序顯示第2實施形態之多階調光罩 之製造程序之剖面圖。 第5圖係依製程順序顯示第3實施形態之多階調光罩 之製造程序之剖面圖。 第6圖係顯示被遮光部Α所挾持之半透光部Β的圖案 (同圖（1))、及該半透光部B之透過光之光強度分布（同 圖（2))，同圖（a)係顯示半透光區域之寬度爲4ym之情 況，同圖（b)係顯示半透光區域之寬度爲2ym之情況。 I 第7圖係顯示通道寬度與對應該通道寬度之寬度的半 透光部中之曝光光線之透過率的關係圖。 【主要元件符號說明】 10 多 階 苷田 m 光 罩 11 遮 光 部 12 透 光 部 1 3A 第 1 半 透 光 部 13B 第 2 半 透 光 部 -34- 201003299 1 3C 第 3 半 透 光部 1 3E 第 4 半 透 光部 1 3D 第 6 半 透 光部 1 3F 第 5 半 透 光部 14 透 明 基 板 15 遮 光 膜 15a 遮 光 層 15b 反 射 防 止 層 16 半 透 光 膜 17 ' 18 微 細 圖 案 20 被 轉 印 體 2 1 基 板 22 積 層 膜 23 阻 劑 圖 案 30、 30a· -30 c、 32a- ~32d 、 34 第 1阻 劑 圖 案 3 1 a~ 3 1 d > 33a ~33d '35 第 2阻 劑 圖 案 -35-NiSi nitride, oxide, nitrogen oxide, carbide, etc.). The semi-transmissive film 16 preferably has a permeation amount of about 1 〇 to 80%, preferably about 20 to 70%, relative to the amount of light transmitted from the exposure light of the transparent substrate 14 (light transmitting portion). Here, a MoSix film having a film transmittance of 40% (when the light transmitting portion is made 100%) is used. First, a resist film is formed on the mask blank to form a resist film, and the first drawing is performed. In the present embodiment, for example, laser light is used. Further, a positive photoresist is used as the above resist. Then, a predetermined pattern is drawn on the resist film, and development is performed after drawing to form first resist patterns 30a to 30c (see Fig. 2(b)). The first resist patterns 30a and 30c cover the areas of the light-shielding portion 11, the first semi-transmissive portion 13A, the third semi-transmissive portion 13C, and the sixth semi-transmissive portion 13D of the mask to be manufactured, and the first The resist pattern 30b includes a resist pattern for forming a predetermined fine pattern in the region of the second semi-transmissive portion 13B and the fourth and fifth semi-transmissive portions 13E and 13F. Further, the fine semi-transmissive film 16 constituting the second semi-transmissive portion 13B of the mask and the fine pattern of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 constitute the third semi-transmissive portion 13C and The fine pattern 18 of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 of the sixth semi-transmissive portion 13D and the fine pattern of the semi-transmissive film 16 formed between the fine patterns 18 constitute a fourth semi-transparent light. The fine pattern of the semi-transmissive film 16 of the portion 13E and the fine pattern of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 constituting the fifth semi-transmissive portion 13F are all used in the mask. Under the exposure conditions, the fine pattern of the image of the semi-transmissive film is set such that the transmittance of the first semi-transmissive portion 13A is such that the transmittance of the first semi-transmissive portion 13A is desired. In other words, depending on the material of the film and the thickness of the film, -22-201003299, the respective fine patterns are set so that the respective exposure light transmittances of the second to sixth semi-light-transmitting portions 13B to 13F are desired. Line width. Then, the light-shielding film 15 composed of the layers of the light-shielding layer 15a and the anti-reflection layer 15b is etched by using the first resist patterns 30a to 30c as an etching mask to form a light-shielding film pattern (see FIG. 2(c)). . In the case of using the light-shielding film 15 having chromium as a main component, either the dry etching or the wet etching may be used as the etching means, but in a large-sized photomask for manufacturing a large liquid crystal display panel, for example, it is suitable to use wet. Etching. In the wet etching, for example, cerium ammonium nitrate (Π) is used as an etching liquid. Further, the light-shielding film 15 and the lower semi-transmissive film 16 are preferably formed of a material having an etching selectivity to a predetermined etching agent. In this case, it is difficult to etch the semi-transmissive film 16 when the light shielding film 15 is etched. After the remaining first resist pattern 30 is removed (refer to FIG. 2(d)) (or may be removed after the uranium engraving process of the subsequent semi-transmissive film 16 is completed), the light-shielding film formed above may be formed. The pattern is used as a mask to etch the lower semi-transmissive film 16 (see Fig. 2(e)). In the case of using the semi-transmissive film 16 having, for example, a deuterated molybdenum I compound as a main component, either an dry etching or a wet etching may be used as the etching means, and in the wet etching, for example, ammonium hydrogen fluoride is used. The main component is used as an etching solution. Next, the same resist film as described above was again formed in its entirety, and the second drawing was performed. In other words, by drawing a predetermined pattern on the resist film, development is performed after the drawing to form the second resist patterns 31a to 31d (see FIG. 2). The second resist patterns 31a and 31b are covered by the second resist pattern 31a and 31b. The area of the light-shielding portion 11 of the reticle to be manufactured is also exemplified by the area of the fifth semi-transmissive portion 13F formed by the fine pattern of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 -23-201003299. Further, the second resist pattern 3 1 c is a fine pattern of the laminated film formed by the micro-finished film 16 and the light-shielding film 15 formed by the region of the second semi-transmissive portion 13B of the cover. The square 3ld of the fine gaps (interval regions) on both sides is used to form a resist pattern of a predetermined fine pattern in the third semi-transmissive portion 13C and the sixth semi-transmissive region. Further, here, it is suitable to cover the semi-transparent film. The width of the fifth semi-transmissive portion 13F formed by the fine pattern of the film and the rapid film is the width of the region pattern 31b which is wider than the width of the region (f). Thereby, when the second drawing is performed in the two resist patterns, it is possible to prevent the CD precision of the fine pattern from being satisfactorily maintained, assuming that the alignment deviation of the solution occurs. Therefore, the transmittance of the light portion 13F is out of the allowable range and the deviation is determined by processing the pattern data of the second resist pattern 3 1 b and the resist pattern of the width to determine the margin of the enlargement size at this time. In order to calculate the amount of the misalignment amount assumed to be a fine pattern of an integral number of the above-mentioned laminated films, it is also possible to set the same deviation bias countermeasure for other aspects. Next, the second resist patterns 31a to 31d are used. The light-shielding film 15 and the light-shielding film 15 on the exposed region are finely engraved (see Fig. 2(g)). In this case, the etching process is the same. Since the etched strip light-transmissive film 16 with respect to the light-shielding film 15 has an etching option Therefore, the above-mentioned semi-transparent 3 etching is performed. The second pattern of the area where the light film 13 is formed in the region of the light portion 13D is formed by the micro-pattern of the finest pattern in the fine pattern to be produced (see FIG. 2). In order to form the first drawing, the alignment deviation can prevent semi-transparent. Here, when the width is the width margin described above, the width of the pattern is surely wrapped. For the mask, the pattern is simultaneously etched. Can be combined with (c) above: The lower half film 16 is difficult to be removed by -24-03203299, and then the remaining second resist patterns 31a to 31d are removed. Thus, the following order light ray mask 1 having different exposure light transmittances, for example, 9 stages can be completed. 〇 (refer to FIG. 2(h)), which is formed on the transparent substrate 14 and has a light-shielding portion formed by laminating the semi-transmissive film 16 and the light-shielding film 15 composed of the light-shielding layer 15a and the reflection preventing layer 15b. 11; exposing the light-transmitting portion 12 of the bright substrate 14; and forming the first semi-transmissive portion 13A by the semi-transmissive film 16; using the fine pattern 17 of the semi-transmissive film 16 similar to the above, and the shading The second semi-transmissive film 16 and the fine pattern 18 of the laminated film of the light-shielding film, and the fine gap (interval portion) are formed by a fine pattern having a line width equal to or lower than the resolution limit under the exposure condition. The light portion 13B; the solution having the fine pattern 18 of the laminated film of the semi-transmissive film 16 and the light-shielding film and the fine pattern of the semi-transmissive film 16 formed between the fine patterns 18 a third semi-transmissive portion 13C formed by a fine pattern of a line width below the limit; The fourth semi-transmissive portion 1 3E formed by the fine pattern 17 below the image boundary under the exposure conditions formed by the same semi-transmissive film 16 is the same as the semi-transmissive film 16 and the light-shielding portion. a fifth semi-transmissive portion 13F having a fine pattern 18 below the resolution limit under exposure conditions formed by lamination of the film 15; and a third semi-transmissive portion 13C formed in the third semi-transmissive portion 13C The sixth light-transmitting portion 13D having a line width of the fine pattern formed and a width different in line width of the fine pattern 18 formed by the light film 15. Here, for example, the second semi-transmissive portion 138 to the fifth semi-transparent portion The portion 13F' can change the line width of the fine pattern depending on the area, so that the multi-step dimming cover can be manufactured one by one. In this case, the manufacturing procedure can be directly performed as described above. The first half of the film is formed by a half-light step--25-201003299. As described above, according to the method for manufacturing the multi-step dimmer of the present embodiment, the light-shielding film can be used. The combination of the semi-transmissive films is formed by a photolithography method, and the semi-transmissive portion formed by using the semi-transmissive film, and the fine pattern and/or the light-shielding film respectively using the semi-transmissive film are formed with high precision. The semi-transmissive portion formed by the fine pattern has a large advantage in mass production because the above-described multi-step dimming cover can be manufactured by a simple process which is efficient and has a low probability of occurrence of defects. Further, once the pattern transfer using the multi-step dimming cover of the present invention as shown in the above-mentioned first FIG. 1 is carried out, a multi-step transfer transfer pattern having a high-precision remnant film and a high precision can be formed on the object to be transferred. . Further, in the above, a film having a mutual etching selectivity is used for the light shielding film 15 and the semi-transmissive film 16. On the other hand, when the light-shielding film 15 and the semi-transmissive film 16 are not sufficiently etched selectively, an etching stopper film can be introduced between the two. In this case, a film made of a chromium or a chromium compound may be used as the light-shielding film 15 and the semi-transmissive film 16, and molybdenum-deposited molybdenum, ruthenium dioxide, or the like may be used for the etching stopper film. Further, the multi-tone mask of the present invention shown in Fig. 2 can be manufactured as shown in Fig. 3 by changing its manufacturing procedure. Here, with respect to the second drawing, the semi-transmissive film is etched by using the first resist pattern (or a light-shielding film pattern etched as a mask) as a mask, and only the light-shielding film is etched. Further, the second resist pattern is used as a mask instead of etching the light-shielding film to etch a semi-transmissive film. Here, it is preferable that the second resist pattern includes at least a part of the light shielding portion, and more preferably, as shown in FIG. 3, the light shielding portion adjacent to the light transmitting portion is preferably not included in the second resist pattern. part. Once this is done, the influence of the alignment deviation and the damage of the light-shielding film in the fine pattern can be suppressed. -26- 201003299 [Second Embodiment] Next, a second embodiment of the present invention will be described based on Fig. 4 . Fig. 4 is a cross-sectional view showing the manufacturing procedure of the multi-step dimmer 10 of the second embodiment in the order of processing. The same components are denoted by the same reference numerals as those of the first embodiment and the second embodiment of the first embodiment. As shown in Fig. 4(a), the mask blank used is a light-shielding film 15 composed of a laminate of a light-shielding layer 15a and an anti-reflection layer 15b on a transparent substrate 14 such as a glass substrate. The light-shielding layer 15a is preferably made of, for example, chromium or a compound thereof (for example, CrN, CrO, or CrC), and examples of the antireflection layer 15b include a chromium-based compound (for example, CrN, CrO, CrC, etc.). . First, a resist film is formed on the mask blank to form a resist film, and the first drawing is performed. A positive photoresist is used as the above resist. Then, a predetermined pattern is drawn on the resist film, and development is performed after drawing to form first resist patterns 32a to 32d (see Fig. 4(b)). The first resist pattern 32a covers a region of the light-shielding portion 11, the light-transmitting portion 12, and the fifth semi-transmissive portion 13F of the mask to be manufactured, and the first resist pattern 3 2b is used for the fourth half. The region of the light transmitting portion 13E forms a resist pattern of a predetermined fine pattern. Further, the first resist pattern 32c is used to form a resist pattern of a fine pattern of a semi-transmissive film in a region of the second semi-transmissive portion 13B, and 32d is used for the third and sixth semi-transmissive portions 13C. The region of 13D forms a resist pattern of a fine pattern of the semi-transmissive film. Then, the light-shielding film 15 composed of the laminated layers of the light-shielding layer 15a and the anti-reflection layer 15b is etched by using the first resist pattern 3 2 a to 3 2 d as an etching mask to form a light-shielding film pattern (see FIG. 4 (see FIG. 4). c)). In the case of using the light-shielding film 15 having chrome-27-201003299 as a main component, the etching means may be either dry etching or wet etching, but in wet etching suitable for manufacturing a mask of a large size, for example, For example, ammonium cerium nitrate (Π) is used as an etching solution. After the remaining first resist patterns 32a to 32d are removed (see FIG. 4(d)), the semi-transmissive film 16 is formed on the entire surface of the substrate including the patterned light-shielding film 15 (see FIG. 4). (e)). The semi-transmissive film 16 is similar to the above-described embodiment, and f is preferably a metal telluride compound, particularly a molybdenum telluride compound (in addition to MoSix, there are also MoSi nitride, oxide, nitrogen). Oxides, carbides, etc.). Further, in the present embodiment, the semi-transmissive film 16 is not particularly required to have etching selectivity with the light-shielding film 15. Therefore, for example, a chromium or chromium-based compound can be used similarly to the light-shielding film. Examples of the chromium-based compound include chromium oxide (CrOx), chromium nitride (CrNx), chromium carbide (CrCx), chromium oxynitride (CrOxN), and chromium fluoride (CrFx), and carbon and hydrogen are contained therein. Preferably, the semi-transmissive film 16 has a permeation amount of I exposure light with respect to the transparent substrate 14 (transmission portion) of about 10 to 80%, preferably about 20 to 70%. The same resist film as described above was formed on the entire surface, and the second drawing was performed. That is, a predetermined pattern is drawn on the resist film, and development is performed after drawing, whereby the second resist patterns 33a to 33d are formed (see Fig. 4 (f)). The second resist pattern 33a covers a region of the light-shielding portion 11 and the first semi-transmissive portion 13A of the mask to be produced, and 33b covers the semi-transparent pattern in the fine pattern formed by the region of the fourth semi-transmissive portion 13E. The fine pattern of the film 16 further includes a resist pattern for forming a predetermined fine pattern in a region of the fifth semi-transmissive -28-201003299 portion 13F. Further, the second resist pattern 33c includes a resist pattern '33' for covering the fine pattern of the light-shielding film in the region of the second semi-transmissive portion 13B, and the third and sixth semi-transmissive portions 13C and 13D are covered. The resist pattern of the area. Here, in the fine pattern formed in the region of the fourth semi-transmissive portion 13E, for example, the resist pattern 33b for covering the fine pattern of the semi-transmissive film 16 is formed, and the first time is described. The alignment of the depiction becomes important. When a positional deviation occurs, the light-shielding film may remain in the semi-transmissive portion 13E which is formed by the pattern-processed semi-transmissive film 16. Further, the manufacturing method in the first embodiment described above is excellent in reducing the problem of the alignment. Then, the semi-transmissive film 16 and the underlying light-shielding film 15 in the exposed region are continuously etched by using the second resist patterns 33a to 33d as masks (refer to Fig. 4(g)). Then, the remaining second resist patterns 33a to 33d are removed. In this way, the 9th-order dimming cover 10 (see FIG. 4(h)) having different exposure light transmittances, for example, 9 stages, can be completed, and is formed on the transparent substrate 14 by using the light shielding layer 15a and a light-shielding portion 15 formed of a light-shielding film 15 composed of the anti-reflection layer 15b and a semi-transmissive film 16; a light-transmitting portion 12 exposing the transparent substrate 14; and a first portion made of the semi-transmissive film 16 The semi-transmissive portion 13A; the fine pattern 18 of the laminated film of the semi-transmissive film 16 and the light-shielding film 15 and the semi-transmissive film 16 which are the same as the light-shielding portion, and the fine pattern 18 and the fine gap ( a second semi-transmissive portion 13B formed of a fine pattern having a line width equal to or lower than the resolution limit under exposure conditions, and a laminate of the light-shielding film 15 and the semi-transparent film -29-201003299 The third semi-transmissive light is formed by a fine pattern of the film and a fine pattern of the semi-transmissive film 16 formed between the fine patterns 18 and having a fine pattern having a line width equal to or lower than the resolution limit under exposure conditions. Part 1 3C; using the same semi-transparent film 16 as described above The fourth semi-transmissive portion 13E formed by the fine pattern 17 having the resolution below the boundary under the condition; the solution under the exposure conditions formed by the laminated film of the light-shielding film 15 and the semi-transmissive film 16 which are the same as the light-shielding portion a fifth semi-transmissive portion 13F formed by a fine pattern 18 having a thickness of not less than the limit; and a line width of the fine pattern formed by the semi-transmissive film 16 formed in the third semi-transmissive portion 13C And a sixth semi-transmissive portion 1 3 D having a width different in line width of the fine pattern 18 formed by the light-shielding film 15. [Third embodiment] Next, a third embodiment of the present invention will be described with reference to Fig. 5. Fig. 5 is a cross-sectional view showing the manufacturing procedure of the multi-step dimming cover of the third embodiment in the order of process. In addition, the same components are denoted by the same reference numerals as those of the first embodiment and the second embodiment of the first embodiment. I use a mask blank (Fig. 5(a)), and similarly to Fig. 4(a), a light shielding layer 15a and a reflection preventing layer 15b are formed on a transparent substrate 14 such as a glass substrate. Film 15» First, a resist film is formed on the mask blank to form a resist film, and the first drawing is performed. A positive photoresist is used as the above resist. Then, a predetermined pattern is drawn on the resist film, and development is performed after drawing to form a first resist pattern 34 (see Fig. 5(b)). The first resist pattern 34 covers a region of the light-shielding portion 11 of the manufactured photomask, and includes a predetermined fine pattern for the respective semi-transmissive portions 13B to 13D, 13F in the shape of -30-.201003299. The resist pattern. Then, the light-shielding film 15 composed of the laminated layers of the light-shielding layer 15a and the anti-reflection layer 15b is etched by using the first resist pattern 34 as an etching mask to form a light-shielding film pattern (see Fig. 5(c)). In the case where the light-shielding film 15 containing chromium as a main component is used, as the etching means, either dry etching or wet etching may be used, but in wet etching suitable for producing, for example, a large-sized photomask, for example, cerium nitrate is used. Ammonium (Π) is used as an etching solution. After the remaining first resist pattern 34 is removed (see FIG. 5(d)), 半 the semi-transmissive film 16 is formed on the entire surface of the substrate including the patterned light-shielding film 15 (see FIG. 5 (see FIG. 5). e)). As the semi-transmissive film 16, for example, the same as the second embodiment described above is used. The semi-transmissive film 16 is preferably a permeation amount of exposure light to the transparent substrate 14 (light-transmitting portion), and has a permeation amount of about 10 to 80%, preferably about 20 to 70%. Then, the same resist film as described above was formed on the entire surface again, and the second drawing was performed. That is, a predetermined pattern is drawn on the resist film, and development is performed after the drawing, whereby the second resist pattern 35 is formed (see Fig. 5(f)). The second resist pattern 35 includes a resist pattern covering a light-shielding portion π and a semi-transmissive portion 13A of the manufactured photomask, and covering a fine pattern formed in a region of the semi-transmissive portions 13C and 13D; a fine pattern of the light-shielding film formed in a region covering the semi-transmissive portion 13A, and a fine pattern of the semi-transmissive film is formed on the resist pattern between the fine patterns of the light-shielding film; The region forms a resist pattern of a fine pattern of the semi-transmissive film; and a resist pattern covering the fine pattern of the light-shielding film formed in the region of the semi-transmissive portion 13F. </ RTI> -31 - 201003299 Next, the semi-transmissive film 16 on the exposed region is etched by using the second resist pattern 35 as a mask (see Fig. 5(g)). Then, the remaining second resist pattern 35 is removed. In this way, the 9th-order dimming cover 1〇 (see FIG. 5(h)) having the exposure light transmittance of, for example, 9 stages, which is formed on the transparent substrate 14 with the light-shielding layer 15a a light-shielding portion 15 formed by laminating the light-shielding film 15 composed of the anti-reflection layer 15b and the semi-transmissive film 16, a light-transmitting portion 12 exposing the transparent substrate 14, and a semi-transmissive film 16 a semi-transmissive portion 13A; a fine pattern 17 of the same semi-transmissive film 16 as described above, a fine pattern 18 of the laminated film of the light-shielding film 15 and the semi-transmissive film 16 which are the same as the light-shielding portion, and a gap portion a second semi-transmissive portion 13B formed of a fine pattern having a line width equal to or smaller than the resolution limit under the exposure condition, and a fine layer of the laminated film of the light-shielding film 15 and the semi-transmissive film 16 a pattern 18 and a fine pattern of the semi-transmissive film 16 formed between the fine patterns 18, and a third semi-transmissive portion 13C having a fine pattern of line widths below the resolution limit under exposure conditions; Using the exposure conditions formed by the same semi-transmissive film 16 as described above a fourth semi-transmissive portion 13E formed by a fine pattern 17 having a thickness equal to or lower than a boundary; and a resolution limit under exposure conditions formed by a laminated film of the light-shielding film 15 and the semi-transmissive film 16 which are the same as the light-shielding portion a fifth semi-transmissive portion 13F formed by the fine pattern 18; and a line width formed in the third semi-transmissive portion 13C and a fine pattern formed by the semi-transmissive film 16, and a light-shielding film 15 The sixth semi-transmissive portion 13D having a width different in line width of the fine pattern 18 is formed. In the method of manufacturing a multi-step dimming hood produced by the present embodiment as described above, in the method of 32-201003299, a combination of a light-shielding film and a semi-transmissive film is used, and the photolithography method is used to form a half with high precision. The semi-transmissive portion formed of the light-transmissive film and the semi-transmissive portion formed by using the fine pattern of the semi-transmissive film and the fine pattern of the light-shielding film can be easily processed by an efficient and low defect occurrence probability To manufacture the above multi-step dimmer. Further, the reticle of the present invention can be produced by using any of the above embodiments. Further, in comparison with the above, in the second and third embodiments, in the second drawing, a fine pattern is formed on the semi-transmissive film by the resist, and the four semi-transparent film is a reaction product. A variety of transmissive semi-transparent films. Therefore, since the film quality and film thickness of the semi-transmissive film are different from each other, the intensity of the reflected light is also different. When the fine pattern is drawn, it is necessary to precisely control the line width, that is, the amount of exposure light. On the other hand, in the first embodiment, the drawing for forming the fine pattern is performed on the light shielding film (including the reflection preventing film), so that the predetermined line width can be realized under constant drawing conditions. Therefore, there is an advantage that it is easy to produce a multi-step dimmer having a more stable transmittance. Further, according to the third embodiment (Fig. 5), in the semi-transmissive portion formed of the fine pattern formed of the light-shielding film and the light-transmissive film, the first drawing is performed to define the fine pattern. Since the line width of the film pattern of the semi-transmissive portion is not required to be drawn on the semi-transmissive film in which the transmittance varies depending on the product, the fine pattern can be formed with high precision, and the transmittance can be easily controlled. In addition, the molybdenum molybdenum-based semi-transmissive film used in the first embodiment is thin (1 〇 to 200 )) in order to obtain a transmittance of 20 to 70%, and is caused by side uranium engraving. The concern of CD deterioration is very small, so the effect of the present invention is particularly remarkable. Further, the method of manufacturing the multi-step dimming cover of the present invention is not limited to the above-mentioned examples. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a multi-step dimming cover of the present invention and a pattern transfer method using the multi-step dimming cover. Fig. 2 is a cross-sectional view showing the manufacturing procedure of the multi-step dice mask of the first embodiment in the order of processing. Fig. 3 is a cross-sectional view showing another manufacturing procedure of the multi-step dimming cover of the first embodiment in the order of process. Fig. 4 is a cross-sectional view showing the manufacturing procedure of the multi-step dimming cover of the second embodiment in the order of processing. Fig. 5 is a cross-sectional view showing the manufacturing procedure of the multi-step dimming cover of the third embodiment in the order of processing. Fig. 6 is a view showing a pattern of the semi-transmissive portion 挟 held by the light-shielding portion 同 (the same figure (1)) and a light intensity distribution of the transmitted light of the semi-transmissive portion B (the same figure (2)), Figure (a) shows the case where the width of the semi-transmissive region is 4 μm, and Figure (b) shows the case where the width of the semi-transmissive region is 2 μm. I Fig. 7 is a graph showing the relationship between the channel width and the transmittance of the exposure light in the semi-transmissive portion corresponding to the width of the channel width. [Explanation of main component symbols] 10 Multi-order glycosides m Photomask 11 Light-shielding portion 12 Light-transmitting portion 1 3A First semi-transmissive portion 13B 2nd semi-transmissive portion -34- 201003299 1 3C 3rd semi-transmissive portion 1 3E 4th semi-transmissive portion 1 3D 6th semi-transmissive portion 1 3F 5th semi-transmissive portion 14 transparent substrate 15 light-shielding film 15a light-shielding layer 15b anti-reflection layer 16 semi-transparent film 17' 18 fine pattern 20 transfer body 2 1 substrate 22 laminated film 23 resist pattern 30, 30a · -30 c, 32a - 32d, 34 first resist pattern 3 1 a~ 3 1 d > 33a ~ 33d '35 second resist pattern - 35 -