TW201002836A - Producing method of graphite capillary structure of high porosity - Google Patents
Producing method of graphite capillary structure of high porosity Download PDFInfo
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- TW201002836A TW201002836A TW098131481A TW98131481A TW201002836A TW 201002836 A TW201002836 A TW 201002836A TW 098131481 A TW098131481 A TW 098131481A TW 98131481 A TW98131481 A TW 98131481A TW 201002836 A TW201002836 A TW 201002836A
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- Prior art keywords
- graphite
- capillary structure
- porosity
- substrate
- high porosity
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000010439 graphite Substances 0.000 title claims abstract description 36
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims description 2
- 210000004209 hair Anatomy 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 235000013339 cereals Nutrition 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000012811 non-conductive material Substances 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 210000002268 wool Anatomy 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 239000012530 fluid Substances 0.000 abstract description 3
- 239000008151 electrolyte solution Substances 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000012611 container material Substances 0.000 abstract 3
- 238000009713 electroplating Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007730 finishing process Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011799 hole material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 241000237536 Mytilus edulis Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
201002836 六、發明說明: 【發明所屬之技術領域】 用於種以電财式及石墨物理氣相沈積法應 ,均熱板·熱裝置,可以低溫製柄 尚孔隙率石墨毛細結構體製法創新發明者。/ °° 【先前技術】 按,現今電子設備在要求高效能(如電 、向功率(如LED、液晶電視、電漿電視等)之^通) 之需求也巧來越高,各種散熱技術也就應運而生。/ 、u…、 β曰「=」具高熱傳導率、超靜音、結構簡單及多用途等特性 泛ΐ用之散熱技術,其原理係於密閉腔體 ,流動之用;其操作係利用冷熱端之飽 瘵氣往冷端流動,使熱端之液體持續1發而 之 j出熱量而凝結以達到快速傳熱之目的。上述工茲體 吕内壁之毛細結構層再回流至蒸發段,達到 ^=由… 圈,達到憾躲。元件辨增加,「歸、的=專=迴 漸不敷使用,更高導熱效率的「均熱板(& Ί:、效率逐 運而生。 」(扳式熱&)技術也就應201002836 VI. Description of the invention: [Technical field of invention] It is used in the field of electric energy and graphite physical vapor deposition, soaking plate and heat device, and can innovate by low temperature shank and porosity graphite capillary structure system By. / ° ° [Previous technology] According to the demand for high-performance (such as electricity, power (such as LED, LCD TV, plasma TV, etc.)), the demand for high-performance electronic devices is also high. It came into being. /, u..., β曰 "=" is a heat-dissipating technology with high thermal conductivity, ultra-quiet, simple structure and versatility. Its principle is based on closed cavity and flow; its operation system utilizes hot and cold end. The fullness of the helium gas flows to the cold end, so that the liquid at the hot end continues for one time and the heat is condensed to achieve rapid heat transfer. The capillary structure layer of the inner wall of the above-mentioned working body is recirculated to the evaporation section, and reaches the circle of ^= by the circle to reach the regret. The component identification increases, "return, =====================================================================================================
CJ 所欲解決的技術課題: 目前所使㈣「鮮」及「均熱板」製 -、溝槽:於内表面形朗~方向_有其限制. 孔徑一致’但其孔隙率無法提升。雖可薄型=散= 二、燒結:將銅粉或銅網以高溫燒結之方 ^ 成毛細結構。散熱效果佳但由於經過高溫熱處 能之孔隙率孔徑大小,造成成品良㈡i法有效控制主導傳熱性 、擴散接合:以擴散接合之方式結合銅板與鋼粉或銅 纖維 201002836 網。 增加 經過高溫熱處戦基材強度降低,不易_化而使材料成本 發泡二ίΐίϋ,屬:以發泡成型之金屬為毛細結構體,其 發包金屬不易控制聽大小,製程不穩定。 且二生ί銅定預先舖設之毛細結構體:其製程複雜而 、σ二性差,導致其散熱效果較差。 列ίίίf ^基材上生成奈米碳管陣列,以奈米碳管陣 構體。散熱效果佳,但製 須加熱至高溫而使基材軟化。 颂卩貝 :這ΐ方是ί密電鑄的方法來製造金屬微結構 昂貴禋方打均勻且微細的毛細結構,但是其製造成本The technical problems that CJ wants to solve: At present, (4) "Fresh" and "Homogeneous Hot Plate" - Groove: The inner surface is shaped like a lang-direction _ has its limitation. The pore size is the same 'but its porosity cannot be improved. Although thin type = scattered = two, sintering: the copper powder or copper mesh is sintered at a high temperature to form a capillary structure. The heat dissipation effect is good, but due to the pore size of the high temperature heat, the finished product is good (2) i method effectively controls the dominant heat transfer, diffusion bonding: the copper plate and the steel powder or copper fiber 201002836 mesh are diffused and joined. Increased The strength of the substrate after high temperature heat is reduced, and it is not easy to make the material cost foaming. It belongs to: the foamed metal is a capillary structure, and the metal is difficult to control the size and process. And the second ί copper set pre-layed capillary structure: its process is complex, and σ is poor, resulting in poor heat dissipation. Column ίίίf ^ generates a carbon nanotube array on the substrate, in a carbon nanotube array. The heat dissipation effect is good, but it must be heated to a high temperature to soften the substrate. Mussels: This is the method of making electromagnets to make metal microstructures. It is expensive and has a uniform and fine capillary structure, but its manufacturing cost.
Etcht 半1^_性離子侧方法(kive Ιοη 毛二i丰Sr 出毛細結構··以此方法所形成的 製造強’但是使用的材料受半導體製程的限制,同時 如上所述之製程均有其缺點及限制,若欲達到 型綱抑可轉― t發明之主要目的,係在提供—種高孔料 基材表面直接形成高孔隙率毛細結構,可達;ίϊ 4型化、低熱阻係數、高散熱功率,並兼 構 、設備及加工成本低,而降低製造穩定 解決課題之技術手段: 錢传讀進步性者。Etcht semi-1^_sex ion side method (kive Ιοη 毛二i丰Sr out of capillary structure··This method is strong in manufacturing] but the materials used are limited by the semiconductor process, and the processes described above have their own Disadvantages and limitations, if the purpose of the invention is to achieve the main purpose of the invention, the high-porosity capillary structure is directly formed on the surface of the high-porosity substrate, which is capable of achieving a high-porosity type, low thermal resistance coefficient, High heat dissipation power, combined with low cost of construction, equipment and processing, and reduced technical means of manufacturing stable solutions: Money transfer progress.
六时為,f上述之目的’本發明係預先備製一可组成-中处京R 部位以絕緣材料遮蔽並賴m負極 結構體的 序於-電鐘反應槽内填充電解液,程 板基材表面快速鍍上一層基礎微結構體電:器基材與蓋 僻趙,次以積费電化學方式於 201002836 蓋板基材上係進行掏空成型之加工碰;再經pVD騎 尤積法在™賤錢反應槽中,將石墨賤鍍於先前蓋 的基礎微結構體上,形成以石墨為主的毛細 生,孔隙率石墨毛細結構體的容器基材與蓋 -密閉容器’而於其内部抽真空並注入工作流體;其中:以 材與散熱籍片接合再形成高孔隙石墨率毛細結構,可避工 3結構再接娜韓片時因高溫造成毛細功 間長短ί整生成所構歉_可_電流之大小與時 【實施方式】 造内ΐ下及舉一具體實施例’詳細介紹本發明之構 w内谷及其所忐達成之功能效益如后; ^第1⑽所示為本發明之製造流程方塊圖,1含 成一予if :二巧圖所示預先成型備製-導電(銅質)可組合 益1㈣容器基材11與蓋板基材12,而盆中罢柄 基材12上可預先與散熱鰭片12A接合。 八^板 ίο的密電化學)反應程序:配合第2圖所示將密閉容哭 接%源30之負極32,而電源3〇正極31連接一於 賴40轉液巾;軸_卩可於容^才 型,★心H以圖所不者;而相對魏反應程序的堆疊成 a上係^^=i=(™、PEGM侧)於蓋板紐 201002836 m ^鑛程序(Spattering):為一種PVD物理氣相沈積法, 2 ^ ™ _反應槽4G’以高能量的粒子撞擊革巴材 參i田f’妹(石墨)50中的分子或原子被撞擊出來的現 :陽==树(石墨)50為陰極(負極32),以蓋板基材12 裔、; 1},在10負2次方的Torr(真空度)左右的Ar(氬) 二ΐ電壓時,陰極附近的Ar(氬)氣離子化後變成紅+, 二,被紅+離子所撞擊飛出的石墨分子或原子撞上蓋 =SS ;nf上6圖,石_於先前蓋 l微= f ㈣所生成有 ίϋΐ—i高度之基礎微結—支雜丨23如第了圖箭頭所 频—層高孔料μ毛崎髓122,如第8圖 體Ilf 如第8圖所示,將生成有高孔隙率石墨毛細結構 器基材11與蓋板基材12組合封裝成—密閉4 m、m ’而於密器1G高孔料石墨毛細結構體 121所構成的内部空間6G抽真空並注人工作流體。6 o'clock, f the above purpose 'The present invention is prepared in advance and can be composed - the middle part of the R part is covered with an insulating material and the m negative electrode structure is filled in the - electric clock reaction tank to fill the electrolyte, the surface of the substrate Quickly plated with a layer of basic micro-structured body: the substrate and the cover are separated, and the process is performed on the cover material of the 201002836 cover plate by means of electrochemical method; then the pVD rides the special product in the TM In the money reaction tank, the graphite crucible is plated on the base microstructure of the previous cover to form a graphite-based capillary, a container substrate of a porosity graphite capillary structure and a lid-closed container, and is drawn inside thereof. Vacuum and inject the working fluid; wherein: the material is combined with the heat-dissipating piece to form a high-porosity graphite-capillary structure, which can avoid the structure of the structure and avoid the length of the capillary work due to the high temperature. _ Current magnitude and time [Embodiment] The following is a detailed description of the structure of the present invention and the functional benefits achieved by the present invention; ^1(10) shows the present invention Manufacturing process block diagram, 1 contains The pre-forming preparation-conducting (copper) can be combined with the 1 (4) container substrate 11 and the cover substrate 12, and the handle substrate 12 in the basin can be previously bonded to the heat dissipation fins 12A. . Eight-plate ίο's dense electrochemical) reaction procedure: in conjunction with the second figure, the closed capacitor is cried to the negative electrode 32 of the source 30, and the power supply 3 〇 positive 31 is connected to a Lai 40 reel; the axis _ 卩Rong ^ Cai type, ★ heart H is not in the picture; and the relative Wei reaction program is stacked on a line ^^=i=(TM, PEMM side) in the cover plate 201002836 m ^ Mine program (Spattering): A PVD physical vapor deposition method, 2 ^ TM _reaction tank 4G' with high-energy particles hitting the molecules or atoms in the leather stalks i Tian f'mei (graphite) 50 is now hit: Yang == tree (graphite) 50 is a cathode (negative electrode 32), and is a cover substrate 12; 1}, Ar (argon) at a voltage of 10 minus 2 Torr (vacuum), an Ar near the cathode (argon) gas becomes red + after ionization, and second, graphite molecules or atoms that are struck by red + ions hit the cover = SS; nf on the 6-figure, stone _ in the previous cover l micro = f (four) generated ϋΐ - i height base micro-junction - branching 丨 23 as shown in the figure arrow frequency - layer high hole material μ Maosui pith 122, as shown in Figure 8 Ilf as shown in Figure 8, will produce high porosity graphite Capillary structure substrate 11 The cover plate substrate 12 are combined into a package - a sealed 4 m, m 'and the internal space of the hole in the high density material is graphite 1G capillary structure 121 constituted 6G evacuated and the working fluid injection.
U 、樹枝狀或細結構體之微結構可為點狀、纖維狀 純金實施例所述,導電基材可包括銅、紹、鎳、鐵等 施例&;狀:或經導電化表面處之材料,其形狀不限定於實 金。依照本發明實施例所述,無材可為銅、鎳、料純金屬或合 金屬===述’散熱鰭片可為銅,錄、鐵等純 用配電解液可為硫酸銅水溶液或其他常 依照本發明實關誠,_騎射為^墨、料氧化發者 201002836 有較高的親水性,而且具有比銀、L鐵更 冋的導熱性,甚至比純銅還要來得高。 戮更 經由’高孔隙率石墨毛細結構體之組織可 ^由電机之大小、時間長短調整生成所需之組織。' 如上所述本發明「高孔隙率石墨毛細結構之 接於基材 '晶片或電子元件上形成高 ^了直 综上所述ί知有之多重進步性者。 ,亦具新穎性,當符合專利法之規定,爰ίί 懇請貴審查委員惠准專利為禱。 第1圖:可·成密閉容器之容器基材 第2圖.明於容器基材與蓋板基材上包覆絕緣材料之 係本發明賊反_平面示。 圖· 明於容器基材與蓋板基材上生成基礎結構體The microstructure of the U, dendritic or fine structure may be a point-like, fibrous pure gold embodiment, and the conductive substrate may include copper, sulphur, nickel, iron, etc., as in the case of: or via a conductive surface. The material is not limited to solid gold. According to the embodiment of the present invention, the material may be copper, nickel, pure metal or metal. === The heat sink fin may be copper, and the pure electrolyte solution for recording, iron, etc. may be copper sulfate aqueous solution or other. Often in accordance with the present invention, Guan Guancheng, _ riding shot for ^ ink, material oxidation hair 201002836 has a higher hydrophilicity, and has a more thermal conductivity than silver, L iron, even higher than pure copper.戮More The structure of the high-porosity graphite capillary structure can be adjusted by the size and length of the motor to produce the desired structure. As described above, the "high-porosity graphite capillary structure of the substrate" on the substrate or the electronic component is formed in a high-intensity manner, and is also novel. The provisions of the Patent Law, 爰ίί 恳 审查 审查 审查 惠 惠 惠 惠 。 。 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The invention is based on the thief of the present invention. The figure shows the base structure formed on the container substrate and the cover substrate.
Cj 第5圖1本=賴程序PVD物理氣相沈積法之反應槽平 卸不思圖。 第6圖先前蓋板基材的基礎微結構上滅孔 •隙率石墨毛細結構體示意圖。 第2丨構體支樓柱示意圖。 第㈣.係本發明容器基材與蓋板基材封裝完成平面示意圖 ,10圖:係本㈣之製造轉方塊圖。 【主要元件符號說明】 n0r;i2T^L u····容器基材 111 —基礎微結構體 201002836 112、122....高孔隙率石墨毛細結構體 12.. ..蓋板基材 12A....散熱鰭片 123.. ..基礎微結構體支撐柱 20....絕緣材料 21.·.·絕緣母模 30....電源 31....正極 32.. ..負極 40....電鍍反應槽 40’ .... PVD濺鍍反應槽 50.. ..靶材(石墨) 60....内部空間Cj Figure 5 This is the reaction tank of the PVD physical vapor deposition method. Fig. 6 is a view showing the pore-cutting graphite capillary structure on the base microstructure of the previous cover substrate. Schematic diagram of the second truss branch. (4) is a schematic plan view of the packaging of the container substrate and the cover substrate of the present invention, and 10: a manufacturing turn block diagram of the present invention. [Description of main component symbols] n0r; i2T^L u····Container substrate 111—Basic microstructure 201002836 112, 122....High-porosity graphite capillary structure 12..... Cover substrate 12A ....Fixed fins 123...Basic microstructure support column 20... Insulation material 21.·.·Insulation master 30....Power 31....Positive 32.. .. Negative electrode 40....plating reaction tank 40' .... PVD sputtering reaction tank 50.. .. target (graphite) 60....internal space
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098131481A TW201002836A (en) | 2009-09-18 | 2009-09-18 | Producing method of graphite capillary structure of high porosity |
| US12/883,198 US20110067360A1 (en) | 2009-09-18 | 2010-09-16 | Method for manufacturing high porosity graphite capillary structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098131481A TW201002836A (en) | 2009-09-18 | 2009-09-18 | Producing method of graphite capillary structure of high porosity |
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| Publication Number | Publication Date |
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| TW201002836A true TW201002836A (en) | 2010-01-16 |
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| US (1) | US20110067360A1 (en) |
| TW (1) | TW201002836A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103090562A (en) * | 2013-02-06 | 2013-05-08 | 济南道生一新能源科技有限公司 | Flat-plate heat pipe solar collector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6469381B1 (en) * | 2000-09-29 | 2002-10-22 | Intel Corporation | Carbon-carbon and/or metal-carbon fiber composite heat spreader |
-
2009
- 2009-09-18 TW TW098131481A patent/TW201002836A/en unknown
-
2010
- 2010-09-16 US US12/883,198 patent/US20110067360A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103090562A (en) * | 2013-02-06 | 2013-05-08 | 济南道生一新能源科技有限公司 | Flat-plate heat pipe solar collector |
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| Publication number | Publication date |
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| US20110067360A1 (en) | 2011-03-24 |
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