TW201002753A

TW201002753A - Inclusion complex containing epoxy resin composition for semiconductor encapsulation

Info

Publication number: TW201002753A
Application number: TW97139112A
Authority: TW
Inventors: Kazuo Ono; Masami Kaneko; Natsuki Amanokura
Original assignee: Nippon Soda Co
Priority date: 2008-07-11
Filing date: 2008-10-09
Publication date: 2010-01-16

Abstract

A semiconductor encapsulation material capable of bringing about dense encapsulation is attained by improving the storage stability of the material and realizing proper fluidity of the material in encapsulation and an efficient heat curing rate thereof. An epoxy resin composition for semiconductor encapsulation, characterized by comprising (A) an epoxy resin and (B) an inclusion complex containing both (b1) an aromatic carboxylic acid and (b2) at least one imidazole represented by the general formula (II) wherein R2 is hydrogen or the like; and R3 to R5 are hydrogen or the like.

Description

201002753 九、發明說明：【發明所屬之技術領域】本發明係關於一種用晶籠錯合物作為硬化劑及/或硬化促進劑的半導體密封用環氧樹脂組合物。【先前技術】作為電日日體、IC (integrated circuit，積體電路）、[si (large-scale integration，大型積體電路）等半導體元件或電氣零件之密封材料，一直使用含有環氧樹脂、硬化劑、硬化促進劑以及其他添加劑的環氧樹脂組合物。先前的使用胺系化&物或咪唑系化合物等作為硬化劑或硬化促進劑的環氧樹脂組合物在保存穩定性方面存在問題。近年來，為改善該保存穩定性，提出使用下述晶籠錯合物來作為硬化促進劑，該晶籠錯合物以味唾系化合物或胺系化合物作為客體化合物，以1，1’，2,2，·四（4_經基苯基）乙烧作為主體化合物（參照專利文獻1)。然而，儘管藉由用四（心羥基笨基）乙烷包藏咪唑系化合物或胺系化合物，與將該等 A合物單獨使用或併用之情形相比，可提高密封材料在常溫下之保存穩定性，但是並無法充分滿足能夠應對近年來進步顯著之半導體規格微細化的密封材料組成。專利文獻1:日本專利特開2〇〇4·3〇7545 【發明内容】發明所欲解決之問題、本發明之課題在於提高半導體密封材料之保存穩定性，並且在密封時保持密封材料之流動性，且使密封材料實現 135032.doc 201002753 高效率之熱硬化速度，以應對縝密之半導體對密封材料之要求。解決問題之技術手段本發明者等人為解決上述課題而銳意研究，結果發現，藉由使用至少包含芳香族羧酸化合物、咪唑化合物的晶籠錯合物作為環氧樹脂之硬化劑及/或硬化促進劑，可解決上述課題，從而完成了本發明。即’本發明係關於 π] 一種半導體密封用環氧樹脂組合物，其特徵在於包含下述（A)成分及（B)成分： (A) 環氧樹脂； (B) 晶籠錯合4勿’其含有（bl)芳香族叛酸化合物、及 (b2)以式（II) [化1][Technical Field] The present invention relates to an epoxy resin composition for semiconductor encapsulation using a crystal cage complex as a hardener and/or a hardening accelerator. [Prior Art] As a sealing material for semiconductor components such as electric solar cells, ICs (integrated circuits), and [si (large-scale integration) circuits, electrical insulating materials, epoxy resins have been used. An epoxy resin composition of a hardener, a hardening accelerator, and other additives. Previous epoxy resin compositions using an amine-based compound or an imidazole-based compound or the like as a hardener or a hardening accelerator have problems in storage stability. In recent years, in order to improve the storage stability, it has been proposed to use a crystal cage complex as a hardening accelerator which has a taste compound or an amine compound as a guest compound, and 1,1', 2,2,·tetrakis(4-diphenyl)ethyl bromide is used as a host compound (see Patent Document 1). However, although the imidazole compound or the amine compound is occluded with tetrakis (heart hydroxy), the storage material can be stably stored at room temperature as compared with the case where the A compounds are used alone or in combination. Sexuality, but it cannot fully satisfy the composition of the sealing material that can cope with the refinement of semiconductor specifications that have been progressing in recent years. Patent Document 1: Japanese Patent Laid-Open No. 2 〇〇 · 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇 Sexuality, and the sealing material achieves the high-efficiency thermal hardening speed of 135032.doc 201002753 in order to meet the requirements of the sealed semiconductor materials. Means for Solving the Problems The inventors of the present invention have intensively studied to solve the above problems, and have found that a crystal cage compound containing at least an aromatic carboxylic acid compound or an imidazole compound is used as a hardener and/or hardening agent for an epoxy resin. The accelerator can solve the above problems, and the present invention has been completed. That is, the present invention relates to π] an epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) and (B): (A) epoxy resin; (B) crystal cage mismatch 4 'It contains (bl) an aromatic tickic acid compound, and (b2) is given by formula (II) [Chemical 1]

[式中，I表示氫原子、Cl〜cl〇之烷基、苯基、节基或氛基乙基’ R3〜R5表示氫原子、確基、鹵素原子、C1〜C20之院基、苯基、节基、經基甲基或C卜C20之醯基。]所表示之咪唑化合物中的至少1種。另外’本發明係關於 [2]-種半導體固態密封用環氧樹脂組合物，其特徵在於包 135032.doc 201002753 含下述（A)成分〜(C)成分： (A) 環氧樹脂； (B) 晶籠錯合物，其含有（bl)芳香族羧酸化合物、及 (b2)以式（II) [化2]Wherein I represents a hydrogen atom, an alkyl group of Cl~cl〇, a phenyl group, a benzyl group or an arylethyl group. R3 to R5 represent a hydrogen atom, an exact group, a halogen atom, a C1 to C20 group, and a phenyl group. , a radical, a methyl group or a C group of C20. At least one of the imidazole compounds represented by the formula. Further, the present invention relates to an epoxy resin composition for semiconductor solid-state sealing of [2], characterized in that the package 135032.doc 201002753 comprises the following components (A) to (C): (A) an epoxy resin; B) a cage compound comprising (bl) an aromatic carboxylic acid compound, and (b2) a formula (II) [Chemical 2]

[式中，R2表示氫原子、Cl〜CIO之烷基、苯基、苄基或氰基乙基’ R_3〜Rs表示氫原子、硝基、鹵素原子、cl〜c2〇之烷基、笨基、苄基、羥基甲基或C1〜c20之醯基。]所表示之咪唑化合物中的至少1種； (C)無機填充劑。進而，本發明係關於 ’其中(bl)芳香族羧酸化 [3]如[1]或[2]之環氧樹脂組合物合物係以式（I-1) [化3]Wherein R 2 represents a hydrogen atom, an alkyl group of C1 to CIO, a phenyl group, a benzyl group or a cyanoethyl group; R_3 to Rs represents a hydrogen atom, a nitro group, a halogen atom, an alkyl group of c1 to c2〇, a stupid group. , benzyl, hydroxymethyl or a thiol group of C1 to c20. At least one of the imidazole compounds represented by the formula; (C) an inorganic filler. Further, the present invention relates to an epoxy resin composition in which (bl) aromatic carboxylation [3] such as [1] or [2] is given by formula (I-1) [Chemical 3]

(式中，nl表示！數。Ri表示Cl〜6 或式（1-2) [化4] 1〜4中之任一整數。n2表示〇 6烷基、硝基、羥基。） 4中之任一整 135032.doc 201002753(wherein nl represents a ! number. Ri represents any integer of Cl~6 or formula (1-2) [Chemical 4] 1 to 4. n2 represents a 〇6 alkyl group, a nitro group, a hydroxyl group.) Any whole 135032.doc 201002753

COOH)al (Ι·2) (式中，ml表示1〜4中之任一整數。m2表示〇〜2中之任一整數。R"表禾C1〜6烧基、硝基、羥基或下式 [化5]COOH)al (Ι·2) (wherein ml represents any integer from 1 to 4. m2 represents any integer of 〇~2. R"表和C1~6 alkyl, nitro, hydroxy or lower Formula [5]

；COOH)q (式中，q表示整數1或2。*表示鍵結位置。）。）所表示的化合物； [4]如[1]或[2]之環氧樹脂組合物，其中（bl)芳香族羧酸化合物係選自以3,5-二羥基苯曱酸、間苯二甲酸、對苯二甲酸、5-第三丁基間苯二甲酸、5_硝基間苯二曱酸、5_羥基間苯二甲酸、偏苯三甲酸、均苯三甲酸、均苯四甲酸、 2.6- 萘二甲酸、i，4_萘二甲酸以及4,4,_二甲酸二苯曱_所址成之群中的至少1種；或者 [5 ]如[1 ]〜[4 ]中任—項之援氨括+日匕6日人▲ 合物係由酉夂、5 -第二_ 丁其門纪甲丁基間本二甲酸、5_硝基間笨二間苯二甲酸、偏苯三甲酸、均苯甲：5,基 2.6- 萘二曱酸、14塞 T馱、均本四甲酸、，4_#二甲酸以及4,4，-二甲酸二成之群中的至少1種婪本甲酮所組王^ 1種方香族羧酸化合物，與 (b2)選自以2-甲其畦，少、未唑、2_乙基·4_甲基味唑、2-十—烷基 135032.doc 201002753 咪唑以及2-苯基_4-甲基-5-羥基甲基咪唑所組成之群中的至少1種咪唑化合物所形成的晶籠錯合物。進而，本發明係關於 [6] —種晶籠錯合物，其係由選自以均苯三甲酸、•萘二甲酸、1，4-萘二甲酸以及4,4，_二甲酸二苯甲酮所組成之群中之至少1種，與以式（II) [化6];COOH)q (where q represents an integer of 1 or 2. * represents the bonding position.). (4) The epoxy resin composition according to [1] or [2], wherein the (bl) aromatic carboxylic acid compound is selected from the group consisting of 3,5-dihydroxybenzoic acid and m-phenylene Formic acid, terephthalic acid, 5-tert-butyl isophthalic acid, 5-nitroisophthalic acid, 5-hydroxyisophthalic acid, trimellitic acid, trimesic acid, pyromellitic acid , at least one of 2.6-naphthalene dicarboxylic acid, i, 4_naphthalene dicarboxylic acid, and 4,4,-dicarboxylic acid diphenyl hydrazine _; or [5] as in [1]~[4]任- Item Ammonia Included + 匕匕 6 日 ▲ 合物酉夂 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 丁丁丁丁丁丁丁丁丁丁丁丁Tricarboxylic acid, benzoic acid: 5, yl 2.6-naphthalene dinonanoic acid, 14 stopper T 驮, homotetracarboxylic acid, 4_# dicarboxylic acid, and at least 1 species of 4,4,-dicarboxylic acid The ketone group is a group of 1 compound aromatic carboxylic acid compound, and (b2) is selected from the group consisting of 2-methyl acetonide, oligo, unazol, 2-ethyl 4-methyl oxazole, 2-ten- Alkyl 135032.doc 201002753 Imidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole One kind of clathrate compound-imidazol-formed complexes. Further, the present invention relates to [6] a crystal cage complex selected from the group consisting of trimesic acid, naphthalene dicarboxylic acid, 1,4-naphthalene dicarboxylic acid, and 4,4,dicarboxylic acid diphenyl. At least one of the groups consisting of ketone, and formula (II)

NN

(Π) [式中，R2表示氫原子、C1〜C10之烷基、苯基、苄基或氰基乙基，r3〜r5表示氫原子、硝基、函素原子、ci〜c2〇之烧基、苯基、节基、經基曱基或C1〜C20之酿基。]所表示之咪唑化合物中的至> — v 種所形成的晶籠錯合物。【實施方式】本發明之半導體密封用产条卜了用％虱樹脂組合物只要包含 (A) 環氧樹脂，以及 (B) 晶籠錯合物，其含有有（bl)方香族鲮酸化合物、及 (b2)以式（II)所表示之咪 [/fb7] 化合物中的至少1種 135032.doc 201002753 R<t R5(Π) [wherein, R2 represents a hydrogen atom, an alkyl group of C1 to C10, a phenyl group, a benzyl group or a cyanoethyl group, and r3 to r5 represents a hydrogen atom, a nitro group, a hydroxyl atom atom, and a ci~c2 group. Base, phenyl, benzyl, thiol or C1 to C20. The crystal cage complex formed by the > - v species in the imidazole compound represented. [Embodiment] The % bismuth resin composition for semiconductor sealing of the present invention contains (B) an epoxy resin, and (B) a crystal cage complex containing (bl) scented citric acid. a compound, and (b2) at least one of the compounds of the formula [/fb7] represented by the formula (II) 135032.doc 201002753 R<t R5

W ΓΛ ΝγΝ-π2 ⑴）W ΓΛ ΝγΝ-π2 (1))

Ra [式中，R2表示氫原子、cl〜cl〇之烷基、苯基、苄基或氰基乙基，R3〜R5表示氫原子、硝基、鹵素原子、C1〜C20之烷基、苯基、苄基、羥基甲基或C1〜C20之醯基。]，則並無特別限定。作為（A)成分環氧樹脂，可使用先前公知之各種多聚環『氧化合物，例如可列舉：雙（4-羥基苯基）丙烷二縮水甘油醚、雙（4-羥基_3,5-二溴苯基）丙烷二縮水甘油醚、雙（4_羥基苯基）乙烷二縮水甘油醚、雙（4_羥基苯基）甲烷二縮水甘油趟、間苯一盼二縮水甘油域、間苯三紛三縮水甘油鱗、一羥基聯苯基二縮水甘油醚、四縮水甘油基二苯曱酮、雙間苯二酚四縮水甘油醚、四甲基雙酚A二縮水甘油醚、雙酚C二縮水甘油醚、雙酚六氟丙烷二縮水甘油醚、丨，3_雙 [1-(2,3-環氧丙氧基）小三氟甲基_2,2,2_三氟乙基]苯、^ 雙[1-(2,3-環氧丙氧基三氟甲基_2,2,2·三氟甲基]笨、 4,4 ·雙（2,3-%氧丙氧基）八氟聯苯、苯酚酚醛清漆型雙環氧化a⑯等芳香族系縮水甘《由趟化合物；脂環族二環氧縮 ⑮、脂環族二環氧己二酸_、脂環族二環氧甲酸_、二氧化環己烯乙烯等脂環族多聚環氧化合物；鄰苯二甲酸二縮水甘油S曰、四氫鄰苯二甲酸二縮水甘油酯、六氫鄰笨二甲，二縮水甘油酯、鄰苯二曱酸二曱基縮水甘油酯、六氫鄰苯一甲酸一甲基縮水甘油酯、對羥基苯甲酸二縮水甘油 135032.doc 201002753 -、，3·二羧酸二縮水甘油基環戊醋、二聚酸縮水甘油醋等：：甘’由酯化合物；二縮水甘油基苯胺、二縮水甘油基 ——胺一縮水甘油基胺基苯酚、四縮水甘油基二胺基二苯基甲烷、二縮水甘油基三溴苯胺等縮水甘油胺化合物，· 二縮水甘油基乙内酿脲、縮水甘油基縮水甘油氧基烷基乙内醢服、三縮水甘、，占其显— 甘，由基異二聚氰酸酯等雜環族環氧化合物作為W成分，只要為至少含有芳香㈣酸化合物、及以式（II) [化8] «4 R5 \_/ (II) ΓΛRa [wherein R2 represents a hydrogen atom, an alkyl group of cl~cl〇, a phenyl group, a benzyl group or a cyanoethyl group, and R3 to R5 represent a hydrogen atom, a nitro group, a halogen atom, an alkyl group of C1 to C20, and a benzene group. A benzyl group, a benzyl group, a hydroxymethyl group or a C1 to C20 fluorenyl group. ], there is no special limit. As the epoxy resin of the component (A), various conventionally known polyoxo compounds can be used, and examples thereof include bis(4-hydroxyphenyl)propane diglycidyl ether and bis(4-hydroxy-3,5- Dibromophenyl)propane diglycidyl ether, bis(4-hydroxyphenyl)ethane diglycidyl ether, bis(4-hydroxyphenyl)methane diglycidyl hydrazine, m-phenyl-p- diglycidyl domain, Benzotriene triglycidyl scale, monohydroxybiphenyl diglycidyl ether, tetraglycidyl dibenzophenone, bis resorcinol tetraglycidyl ether, tetramethyl bisphenol A diglycidyl ether, bisphenol C diglycidyl ether, bisphenol hexafluoropropane diglycidyl ether, hydrazine, 3_bis[1-(2,3-epoxypropoxy)trifluoromethyl-2,2,2-trifluoroethyl Benzene, bis[1-(2,3-epoxypropoxytrifluoromethyl-2,2,2·trifluoromethyl] stupid, 4,4 bis (2,3-% oxypropyloxy) Base) octafluorobiphenyl, phenol novolac type bicyclic oxidation a16 and other aromatic glycosides "from hydrazine compounds; alicyclic die epoxide 15, alicyclic diepoxy adipic acid _, alicyclic bicyclic ring Oxyformic acid _, cyclohexene ethylene oxide and other fats Group polyepoxy compounds; phthalic acid diglycidyl S 曰, tetrahydrophthalic acid diglycidyl ester, hexahydro phthalate, diglycidyl ester, dimercapto glyceryl phthalate Ester, hexahydrophthalic acid monomethyl glycidyl ester, p-hydroxybenzoic acid diglycidyl 135032.doc 201002753 -, 3 · dicarboxylic acid diglycidyl cyclopenta vinegar, dimer acid glycidol vinegar, etc.: : glyco-glycidyl ester; diglycidyl aniline, diglycidyl-amine-glycidylaminophenol, tetraglycidyldiaminediphenylmethane, diglycidyltribromoaniline, etc. Amine compound, · diglycidyl acetylene urea, glycidyl glycidyl oxyalkyl group, trisodium sulphate, trisodium sulphate, succinctly, heterocyclic group such as cis-isocyanate The epoxy compound is used as the W component as long as it contains at least an aromatic (tetra) acid compound and is represented by the formula (II) «4 R5 \_/ (II) ΓΛ

NyN-R2 «3 [式中’ R2表示氫原子、C1〜C1Q之烧基、苯基、节基或氛基乙基，r3〜r5表示氫原子、硝基、南素原子、C1〜⑽之烧基、苯基、节基、經基甲基或C1〜C20之醯基。]所表干之味嗤化合物的晶蘢錯合物，則並無特別限制，其亦可含有溶劑等第3成分。此處，所謂「晶籠錯合物」，係指2種或3種以上之分子利用共價鍵以外之鍵相互鍵結而成的化合物，t好的Μ 2種或3種以上之分子利用共價鍵以外之鍵相互鍵結而成二結晶性化合物。將進行包藏之化合物稱為主體化合物，將被包藏之化合物稱為客體化合物。而且，鹽亦包含於此處 135032.doc 12 201002753 所§之晶蘢錯合物内。，、要可形成晶籠化合物，則對上述芳口米口坐化合物之比例對並無特別限制 &化合物與芳香族幾酸化合物丨莫耳，她合物二=於上述好的是0.5〜4.0莫耳。、耳更於含有第3成分之情形時，第3成分相對於組合物油量較好的是40莫耳％以下’更好的是1〇莫耳：不含第3成分。最好的疋對芳香族羧酸化合物並無特別限制定，述者。 -命丨如，可例示下苯甲酸、2-甲基苯甲酸、3_甲基笨甲酸、4_甲基苯甲酸、^乙基苯甲酸、3_乙基苯甲酸、4_乙基苯甲酸、2_正丙基苯甲酸、3_正丙基苯甲酸、4_正丙基苯甲冑、I丁基苯甲酸、3-丁基苯甲酸、4_丁基苯甲酸、2_異丙基苯；酸、3-異丙基苯甲酸、4-異丙基苯甲酸、2•異丁基苯甲酸、3-異丁基苯甲酸、4_異丁基苯曱酸、2_羥基苯甲酸、 3-羥基苯甲酸、4-羥基苯甲酸、硝基苯甲酸、3_硝基笨曱酸、4-硝基苯甲酸、2_硝基笨曱酸曱酯、夂硝基苯甲酸甲酯、4-硝基苯曱酸甲酯、2_硝基苯曱酸乙酯、3_硝基苯甲酸乙酯、4-硝基苯曱酸乙酯、2-硝基苯甲酸丙酯、3_硝基苯曱酸丙酯、4-硝基苯曱酸丙酯、2_硝基苯甲酸丁酯、 3-硝基苯甲酸丁酯、4-硝基苯甲酸丁酯、2,3-二甲基苯甲酸、2,4-二曱基苯甲酸、2,5-二甲基苯甲酸、2,6-二甲基苯甲酸、3,4-二曱基苯甲酸、3,5-二甲基苯甲酸、3,6-二甲基 135032.doc -13- 201002753 苯甲酸、4,5-二甲基苯甲酸、4,6·二甲基苯甲酸、2,3_二乙基苯甲酸、2,4-二乙基苯曱酸、2,5-二乙基苯曱酸、2,6_二乙基苯甲酸、3,4-二乙基苯曱酸、3,5-二乙基苯甲酸、3,6· 二乙基本甲酸、4,5·二乙基苯曱酸、4,6 -二乙基苯曱酸、 2,3-二羥基笨甲酸、2,4-二羥基苯甲酸、2,5_二羥基笨甲酸、2,6-二羥基笨曱酸、3,4-二羥基笨曱酸、35_二羥基笨甲酸、3,6-二羥基苯曱酸、4,5_二羥基苯甲酸、4,6_二羥基苯甲酸；鄰苯二甲酸、3_甲基鄰苯二甲酸、4_曱基鄰苯二甲酸、 5-曱基鄰苯二甲酸、6_曱基鄰苯二甲酸、3_乙基鄰笨二甲酸、4-乙基鄰苯二曱酸、5_乙基鄰苯二甲酸、6_乙基鄰笨二曱酸、3-正丙基鄰苯二甲酸、正丙基鄰苯二曱酸、正丙基鄰苯二曱酸、6-正丙基鄰苯二曱酸、3_ 丁基鄰笨二曱酸、4-丁基鄰苯二甲酸、5_丁基鄰苯二曱酸、&丁基鄰苯二曱酸、3-異丙基鄰笨二曱酸、4_異丙基鄰笨二甲酸、 5- 異丙基鄰笨二甲冑、6·異丙基鄰苯二甲酸、3_異丁基鄰苯二甲酸、4-異丁基鄰苯二甲酸、5_異丁基鄰笨二甲：、 6- 異丁基鄰苯二甲酸、3_羥基鄰苯二甲酸、肛羥基鄰苯二甲酸、5-羥基鄰苯二甲豸、6_羥基鄰苯二甲酸、3,4_二：基鄰苯二甲酸、3,5_二經基鄰苯二甲酸、3,6_二經基鄰苯二甲酸、4,5-二經基鄰苯二甲酸、…經基鄰苯二甲酸、3-硝基鄰苯二甲酸、“肖基鄰苯二甲酸、％石肖基鄰苯二甲酸、6-硝基鄰苯二甲自楚、3,4·二甲基鄰苯二甲酸、π 二甲基鄰苯二甲酸、3,6_二甲基鄰苯二甲酸、4,5_二甲基 135032.doc -14· 201002753 鄰苯二甲酸、4,6_二甲基鄰苯二曱酸；間苯二甲酸、2_甲基間苯二甲酸、4_甲基間苯二甲酸、 5- 甲基間苯二甲酸、6_甲基間苯二甲酸、2_乙基間苯二甲 S文4乙基間笨二甲酸、5-乙基間苯二甲酸、6_乙基間苯一甲酸、2-正丙基間苯二甲酸、4_正丙基間苯二甲酸、5_ 正丙基間苯一甲酸、6-正丙基間苯二甲酸、2-異丙基間苯一甲酸、4_異丙基間苯二甲酸、5-異丙基間苯二甲酸、6_ 異丙基間苯二甲酸、2-丁基間苯二甲酸、4·丁基間苯二甲酸5 丁基間苯二甲酸、6_ 丁基間苯二甲酸、2-異丁基間苯二甲酸、4-異丁基間苯二曱酸、5-異丁基間苯二甲酸、 6- 異丁基間苯二甲冑、4_第三丁基間苯二曱酸、％第三丁基間苯-甲酸、6·第三丁基間苯二甲酸、2-羥基間苯二甲酸、4-經基間苯二甲酸、5_經基間苯二甲酸、6•經基間苯二甲酸、2,4-二羥基間苯二甲酸、2,5_二羥基間苯二甲酸2,6_一羥基間苯二甲酸、4,5-二羥基間苯二甲酸、4,6_ 一說基間苯二甲酸、5,6_二經基間苯二甲酸、2,4-二甲基間苯二甲酸、2,5_二甲基間苯二甲酸、2,6-二甲基間苯二甲酸4,5-_甲基間苯二甲酸、4,6_二甲基間苯二甲酸、 5’6--甲基間苯二甲酸、2_硝基間苯二甲酸、心硝基間笨次5硝基間苯二甲酸、6_硝基間苯二甲酸、2_甲基對笨二甲酸、2_乙基對苯二甲酸、2-正丙基對苯二f酸？ 2一-異丙基對笨二甲酸、2_丁基對苯二甲酸、2_異丁基對苯一：敲2-羥基對苯二甲酸、2,6_二羥基對苯二甲酸、2斗基對本一甲酸、2-硝基對苯二甲酸、苯三甲 I35032.doc -15· 201002753 酸、山-苯三，醆(偏苯三ρ酸、1，3,5_ 一醆）、1，2,5-苯三甲酸、H4- 三f酸、5-羥基」 \醆（均苯三f酸）、4-羥基-m笨酸、5,基笨三甲酸、3_經基-1,2,4-苯三甲 ,2 4 5 ’ 二甲酸、6-羥基-1，2,4-笨=甲酸、 l，2,4,5-本四曱酸（均笨四甲酸）；本—甲酸 1-萘曱酸、2-華甲缺 ^ ” SiL、甲基-1-萘曱酸 ”基…酸、”基-…酸酸、8_f基小蔡f酸， 3^基-2-萘歹酸、4-甲基_2_萘〒酸、 6-甲基_2_萘Μ、7_甲基_2_萘，酸 '3-甲基-1_萘甲 6-甲基-1-萘甲甲基-2-萘曱 5-曱基-2-萘甲甲基-2-萘甲酸酸酸酸酸、1，2-萘二甲酸、j 3 ' π —甲、1，4-萘二甲酸、匕弘萘二甲酸、1，6-萘二甲酸、1 7茬_ — ，奈一甲酉夂、1,8-萘二甲酸、NyN-R2 «3 [wherein R2 represents a hydrogen atom, a C1~C1Q alkyl group, a phenyl group, a benzyl group or an aryl group, and r3~r5 represents a hydrogen atom, a nitro group, a south atom, and a C1~(10) An alkyl group, a phenyl group, a benzyl group, a methyl group or a C1 to C20 fluorenyl group. The crystalline ruthenium complex of the dried miso compound is not particularly limited, and may contain a third component such as a solvent. Here, the term "cage cage complex" refers to a compound in which two or more molecules are bonded to each other by a bond other than a covalent bond, and two or more molecules of t are useful. Bonds other than covalent bonds are bonded to each other to form a dicrystalline compound. The compound to be occluded is referred to as a host compound, and the compound to be occluded is referred to as a guest compound. Moreover, salts are also included in the crystalline germanium complexes as defined herein at 135032.doc 12 201002753. , in order to form a crystal cage compound, there is no particular limitation on the ratio of the above-mentioned aromatic mouth rice mouth compound & compound and aromatic acid compound 丨 Mo Er, her compound 2 = above the above is 0.5~ 4.0 Mo Er. When the ear is more than the third component, the third component is preferably 40 mol% or less with respect to the amount of the composition oil. More preferably, it is 1 mol: no third component. The most preferable 疋 The aromatic carboxylic acid compound is not particularly limited, as described above. - For example, benzoic acid, 2-methylbenzoic acid, 3-methylbenzoic acid, 4-methylbenzoic acid, ethyl benzoic acid, 3-ethylbenzoic acid, 4-ethylbenzene Formic acid, 2-n-propylbenzoic acid, 3-n-propylbenzoic acid, 4-propenylbenzamide, 1-butylbenzoic acid, 3-butylbenzoic acid, 4-butylbenzoic acid, 2-isopropyl Benzoic acid; acid, 3-isopropylbenzoic acid, 4-isopropylbenzoic acid, 2 • isobutylbenzoic acid, 3-isobutylbenzoic acid, 4-isobutylphthalic acid, 2-hydroxybenzene Formic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, nitrobenzoic acid, 3-nitrosomic acid, 4-nitrobenzoic acid, 2-nitrosodecanoic acid decyl ester, fluorenyl nitrobenzoic acid Ester, methyl 4-nitrobenzoate, ethyl 2-nitrobenzoate, ethyl 3-nitrobenzoate, ethyl 4-nitrobenzoate, propyl 2-nitrobenzoate, Propyl 3-nitrobenzoate, propyl 4-nitrobenzoate, butyl 2-nitrobenzoate, butyl 3-nitrobenzoate, butyl 4-nitrobenzoate, 2,3 -dimethylbenzoic acid, 2,4-dimercaptobenzoic acid, 2,5-dimethylbenzoic acid, 2,6-dimethylbenzoic acid, 3,4-dimercaptobenzoic acid, 3,5 - Methylbenzoic acid, 3,6-dimethyl 135032.doc -13- 201002753 Benzoic acid, 4,5-dimethylbenzoic acid, 4,6-dimethylbenzoic acid, 2,3-diethylbenzene Formic acid, 2,4-diethylbenzoic acid, 2,5-diethylbenzoic acid, 2,6-diethylbenzoic acid, 3,4-diethylbenzoic acid, 3,5-di Ethyl benzoic acid, 3,6·diethyl benzoic acid, 4,5·diethyl benzoic acid, 4,6-diethylbenzoic acid, 2,3-dihydroxy benzoic acid, 2,4-di Hydroxybenzoic acid, 2,5-dihydroxybenzoic acid, 2,6-dihydroxy alum acid, 3,4-dihydroxy alum acid, 35-dihydroxy acid, 3,6-dihydroxybenzoic acid, 4,5-dihydroxybenzoic acid, 4,6-dihydroxybenzoic acid; phthalic acid, 3-methylphthalic acid, 4-mercaptophthalic acid, 5-mercaptophthalic acid, 6_decyl phthalic acid, 3-ethyl phthalic acid, 4-ethyl phthalic acid, 5-ethyl phthalic acid, 6-ethyl phthalic acid, 3-positive Propyl phthalic acid, n-propyl phthalic acid, n-propyl phthalic acid, 6-n-propyl phthalic acid, 3 butyl phthalic acid, 4-butyl butyl Phthalic acid, 5-butyl phthalate , &butylphthalic acid, 3-isopropyl ortho-dibenzoic acid, 4-isopropylisophthalic acid, 5-isopropyl benzoquinone, 6-isopropyl phthalate Formic acid, 3-isobutyl phthalate, 4-isobutyl phthalic acid, 5-isobutyl phthalate: 6-isobutyl phthalate, 3-hydroxy phthalic acid , anal hydroxyphthalic acid, 5-hydroxyphthalic acid, 6-hydroxyphthalic acid, 3,4-di-phthalic acid, 3,5-di-diphthalic acid, 3 ,6_di-mercaptophthalic acid, 4,5-di-perylene phthalic acid, ... phthalic acid, 3-nitrophthalic acid, "Shaoke phthalic acid, % Shi Xiaoji Phthalic acid, 6-nitrophthalic acid, 3,4·dimethyl phthalic acid, π dimethyl phthalic acid, 3,6-dimethyl phthalic acid, 4 ,5_dimethyl 135032.doc -14· 201002753 phthalic acid, 4,6-dimethylphthalic acid; isophthalic acid, 2-methylisophthalic acid, 4-methyl Phthalic acid, 5-methylisophthalic acid, 6-methylisophthalic acid, 2-ethylisophthalic acid S 4 ethyl phenyldicarboxylic acid , 5-ethylisophthalic acid, 6-ethyl meta-benzoic acid, 2-n-propyl isophthalic acid, 4-n-propyl isophthalic acid, 5-n-propyl meta-benzoic acid, 6- N-propyl isophthalic acid, 2-isopropyl meta-benzoic acid, 4-isopropylisophthalic acid, 5-isopropylisophthalic acid, 6-isopropylisophthalic acid, 2-butyl Isophthalic acid, 4 · butyl isophthalic acid 5 butyl isophthalic acid, 6 - butyl isophthalic acid, 2-isobutyl isophthalic acid, 4-isobutyl isophthalic acid , 5-isobutylisophthalic acid, 6-isobutyl metaxylene, 4_t-butylisophthalic acid, % tert-butyl meta-benzoic acid, 6·t-butyl Phthalic acid, 2-hydroxyisophthalic acid, 4-perylene-isophthalic acid, 5-hydroxyisophthalic acid, 6-isophthalic acid, 2,4-dihydroxyisophthalic acid, 2,5-dihydroxyisophthalic acid 2,6-monohydroxyisophthalic acid, 4,5-dihydroxyisophthalic acid, 4,6-isopropenyl isophthalic acid, 5,6-di-perylene Isophthalic acid, 2,4-dimethylisophthalic acid, 2,5-dimethylisophthalic acid, 2,6-dimethylisophthalic acid 4,5- _Methyl isophthalic acid, 4,6-dimethylisophthalic acid, 5'6-methylisophthalic acid, 2-nitroisophthalic acid, heart nitro stupid 5 nitro Isophthalic acid, 6-nitroisophthalic acid, 2-methyl-p-benzoic acid, 2-ethyl terephthalic acid, 2-n-propyl-p-phenylene-f-acid 2-isopropyl-p-benzoic acid, 2-butylbutylene terephthalate, 2-isobutyl-p-phenylene: knocking 2-hydroxyterephthalic acid, 2,6-dihydroxyterephthalic acid, 2 Bucket base to Benzoic acid, 2-nitroterephthalic acid, Benzotriene I35032.doc -15· 201002753 Acid, mountain-benzene, bismuth (p-benzoic acid, 1,3,5_ 醆), 1, 2,5-benzenetricarboxylic acid, H4-tri-f acid, 5-hydroxy" \醆(isophthalic acid), 4-hydroxy-m acid, 5, benzylic acid, 3_yl-1 2,4-benzenetrimethyl, 2 4 5 'dicarboxylic acid, 6-hydroxy-1,2,4-stall = formic acid, l, 2,4,5-benzoic acid (all stupid tetracarboxylic acid); 1-Naphthoic acid, 2-Huajia deficiency ^"SiL, methyl-1-naphthoic acid" base acid, "base-...acid acid, 8_f-based Xiaocai f acid, 3^-yl-2-naphthoquinone Acid, 4-methyl-2-naphthoic acid, 6-methyl-2-naphthoquinone, 7-methyl-2-naphthalene, acid '3-methyl-1_naphthylmethyl 6-methyl-1- Naphthylmethyl-2-naphthoquinone 5-mercapto-2-naphthylmethyl-2-naphthoic acid acid, 1,2-naphthalene dicarboxylic acid, j 3 ' π-methyl, 1,4-naphthalene Dicarboxylic acid, hydrazine naphthalene dicarboxylic acid, 1,6-naphthalene dicarboxylic acid, 17 茬 _ —, nai-methyl hydrazine, 1,8-naphthalene Acid,

2,3 -奈一甲酸、2,4 -蔡二甲酸、，ς贫· OT 者一甲馱、2,5-萘二甲酸、2,6_萘二甲酸、2,7-萘二曱酸、2 8_萃二甲酴一 5-羥基-1-萘甲酸 8-羥基-1-萘甲酸 4-羥基-2-萘甲酸 .羥基-2-萘甲酸不一甲醱、2-规基q·萘甲酸、3_ 羥基_ 1 -萘甲酸、4-羥基_ 1 _萘甲酸羥基-1·萘曱酸、7-經基_ι_萘甲酸經基-2-萘曱酸、3-經基_2_萘曱酸輕基-2-萘甲酸、6-經基_2-萘甲酸經基-2-萘甲酸、酸、2,4-二羥基小萘甲酸、2,5_二經基小萘甲酸、2,6•二羥基萘曱酸、2,7-二羥基小萘甲酸、2,8_二羥基小萘甲酸、3,4-二經基-1-萘甲酸、3,5_二羥基q蔡甲酸、3,6_二羥基-1-萘甲酸、3,7-二羥基_；!_萘甲酸、3,8_二羥基萘曱酸、4,5-二羥基-1-萘曱酸、4,6·羥基二羥基萘甲酸、4,7_二 I35032.doc •16· 201002753 經基-1-萘f酸、4,8-二經基-1-萘甲酸、5,6_二經基_1·萘曱酸、5,7-二羥基_u萘甲酸、5,8-二羥基·1_萘甲酸、6,7·二羥基-1-萘甲酸、6,8_二羥基-1-萘甲酸、7,8_二羥基_1_萘甲酸、1，3-二經基-2-萘甲酸、1,4-二經基_2_萘甲酸、1,5_二羥基-2-萘甲酸、1，6-二羥基_2_萘甲酸、1，7-二羥基-2-萘甲酸、1，8-二羥基-2-萘甲酸、3,4_二羥基-2-萘甲酸、3,5-二經基-2-萘曱酸、3,6-二經基_2-萘甲酸、3,8-二經基-2-萘甲酸、4,5-二經基-2-萘甲酸、4,6_二經基-2-萘甲酸、4,7-二羥基-2-萘甲酸、4,8-二羥基_2_萘甲酸、5,6-二羥基-2-萘甲酸、5,7-二羥基-2-萘甲酸、5,8_二羥基_2_萘甲酸、6,7-二羥基-2-萘甲酸、6,8_二羥基_2_萘甲酸、7,8_二羥基_2_萘甲酸、環己曱酸、1,2-環己二甲酸、己二甲酸、1，1_環己二甲酸、丨，2_ 萘二甲酸、1,‘十氫萘二甲酸、萘二甲酸酸、1，3-環己二甲酸、1，4-環 !，2-十氫萘二甲酸、1，3-十氫萘二曱酸、1，7-十氫萘二甲酸、該等芳香族羧酸化合物可單獨々該等芳香族鲮酸化合物中， i，5_十氫萘二甲酸、1，6_十、L8-十氫萘二甲酸等。使用1種或併用2種以上。 [化9]2,3 - Naphthalic acid, 2,4 -Ceradicarboxylic acid, ς · · OT 甲一驮 2, 2,5-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2,7-naphthalenedicarboxylic acid 2,8_Extracted dimethylhydrazine-5-hydroxy-1-naphthoic acid 8-hydroxy-1-naphthoic acid 4-hydroxy-2-naphthoic acid. Hydroxy-2-naphthoic acid not monomethyl hydrazide, 2-regular q Naphthoic acid, 3_hydroxy-1- 1 -naphthoic acid, 4-hydroxy-1 1 naphthoic acid hydroxy-1·naphthoic acid, 7-carbyl_ι-naphthoic acid via benzyl-2-naphthoic acid, 3-mercapto _2_naphthoic acid light base-2-naphthoic acid, 6-alkyl 2-naphthoic acid via benzyl-2-naphthoic acid, acid, 2,4-dihydroxynaphthoic acid, 2,5-diyl Small naphthoic acid, 2,6•dihydroxynaphthoic acid, 2,7-dihydroxynaphthoic acid, 2,8-dihydroxynaphthoic acid, 3,4-dipyridyl-1-naphthoic acid, 3,5 _Dihydroxy q-carotic acid, 3,6-dihydroxy-1-naphthoic acid, 3,7-dihydroxy-;!-naphthoic acid, 3,8-dihydroxynaphthoic acid, 4,5-dihydroxy-1 -naphthoic acid, 4,6-hydroxydihydroxynaphthoic acid, 4,7_di I35032.doc •16· 201002753 Permeyl-1-naphthalene f acid, 4,8-dipyridyl-1-naphthoic acid, 5 , 6_di-diyl-1·naphthoic acid, 5,7-dihydroxy-u-naphthoic acid, 5,8-dihydroxy·1_naphthoic acid, 6,7·dihydroxy- 1-naphthoic acid, 6,8-dihydroxy-1-naphthoic acid, 7,8-dihydroxy_1-naphthoic acid, 1,3-diylidene-2-naphthoic acid, 1,4-dipyridyl 2_naphthoic acid, 1,5-dihydroxy-2-naphthoic acid, 1,6-dihydroxy-2-naphthoic acid, 1,7-dihydroxy-2-naphthoic acid, 1,8-dihydroxy-2- Naphthoic acid, 3,4-dihydroxy-2-naphthoic acid, 3,5-di-based-2-naphthoic acid, 3,6-di-based 2-naphthoic acid, 3,8-dipyridyl- 2-naphthoic acid, 4,5-di-based-2-naphthoic acid, 4,6-di-based-2-naphthoic acid, 4,7-dihydroxy-2-naphthoic acid, 4,8-dihydroxy_ 2_naphthoic acid, 5,6-dihydroxy-2-naphthoic acid, 5,7-dihydroxy-2-naphthoic acid, 5,8-dihydroxy-2-naphthoic acid, 6,7-dihydroxy-2- Naphthoic acid, 6,8-dihydroxy-2-naphthoic acid, 7,8-dihydroxy-2-naphthoic acid, cyclohexanoic acid, 1,2-cyclohexanedicarboxylic acid, adipate, 1,1 ring Dicarboxylic acid, hydrazine, 2_naphthalene dicarboxylic acid, 1, 'decahydronaphthalene dicarboxylic acid, naphthalenedicarboxylic acid, 1,3-cyclohexanedicarboxylic acid, 1,4-cyclo!, 2-decahydronaphthalene dicarboxylic acid, 1 , 3-decahydronaphthalene dicarboxylic acid, 1,7-decahydronaphthalene dicarboxylic acid, the aromatic carboxylic acid compounds may be separately selected from the aromatic citric acid compounds, i, 5 - ten Hydronaphthalene dicarboxylic acid, 1,6-d, L8-decahydronaphthalene dicarboxylic acid, and the like. Use one type or two or more types together. [Chemistry 9]

(式中，Hi 數。R1表示或式（1-2) 整數^ 、羥基。 nl表示1〜4中之任一 | 表示Cl〜6烧基、磺基、 n2表示〇〜4中之任一整 135032.doc -17· 201002753 [化 ίο](In the formula, Hi number. R1 represents or formula (1-2) an integer ^, a hydroxyl group. nl represents any of 1 to 4 | represents a Cl~6 alkyl group, a sulfo group, and n2 represents any of 〇~4 Whole 135032.doc -17· 201002753 [化ίο]

(式中’ ml表示卜4中之任一整數。m2表示〇〜2中之任一整數。R"表示C1〜6烷基、硝基、羥基或下式 [化 11]Wherein 'ml denotes any integer of 卜4. m2 denotes any integer of 〇~2. R" denotes C1~6 alkyl, nitro, hydroxy or the following formula

(式中，q表示整數1或2。*表示鍵結位置。）所表示之芳香族羧酸化合物。作為R〗、Ru之C1〜6烷基，可列舉：甲基、乙基、丙基、異丙基、環丙基、丁基、異丁基、第二丁基、第三丁基、環丁基、環丙基甲基、戊基、異戊基、2_甲基丁基、新戊基、1-乙基丙基、己基、異己基、4_甲基戊基、3_甲基戊基、2-甲基戊基、；[_甲基戊基、3,3_二甲基丁基、2,2_ 二曱基丁基等。進而’該等中’更好的是選自以3,5_二羥基苯曱酸、間苯一甲酸、對苯二曱酸、5_第三丁基間苯二甲酸、5_硝基間苯二甲酸、5_羥基間苯二曱酸、偏苯三曱酸、均苯三甲 k、均苯四甲酸、2,6-蔡二甲酸、ι，4_萘二甲酸以及4,4’-二甲酸二苯甲酮所組成之群中的至少丨種。作為咪唑化合物’只要為式（π) 135032.doc •18- 201002753 [化 12](wherein, q represents an integer of 1 or 2. * represents a bonding position.) The aromatic carboxylic acid compound represented by the formula. Examples of the C1 to 6 alkyl group of R and Ru include a methyl group, an ethyl group, a propyl group, an isopropyl group, a cyclopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, and a ring. Butyl, cyclopropylmethyl, pentyl, isopentyl, 2-methylbutyl, neopentyl, 1-ethylpropyl, hexyl, isohexyl, 4-methylpentyl, 3-methyl Butyl, 2-methylpentyl, [-methylpentyl, 3,3-dimethylbutyl, 2,2-didecylbutyl, and the like. Further, 'these' are more preferably selected from the group consisting of 3,5-dihydroxybenzoic acid, m-benzoic acid, terephthalic acid, 5-tert-butylisophthalic acid, and 5-nitro Phthalic acid, 5-hydroxyisophthalic acid, trimellitic acid, trimesene k, pyromellitic acid, 2,6-cai dicarboxylic acid, iota, 4 naphthalene dicarboxylic acid, and 4,4'- At least one of the group consisting of benzophenone dibenzoate. As the imidazole compound, as long as it is a formula (π) 135032.doc • 18- 201002753 [Chemical 12]

ΠΙ) [式中，R2表不氫原子、Cl〜ci〇之烷基、苯基、苄基或氰基乙基，R3〜R5表示氫原？、硝基、函素原子、ci〜c2〇之烷基、苯基、苄基、羥基甲基或C1〜C20之醯基。；|所表示之化合物，則並無特別限制。作為R2之C1〜C10之烷基，可列舉：甲基、乙基、丙基、異丙基、環丙基、丁基、異丁基、第二丁基、第三丁基、環丁基、環丙基甲基、戊基、異戊基、2甲基丁基、新戊基、1-乙基丙基、己基、異己基、4_曱基戊基、夂甲基戊基、2-甲基戊基、甲基戊基' 3,3-二甲基丁基、2,2_ 二曱基丁基、二甲基丁基、丨，2_二甲基丁基、13_二甲基丁基、2,3-二曱基丁基、^乙基丁基、2_乙基丁基、辛基、壬基、癸基等。作為R3〜Rs之C1〜C20之烷基，除作為&之烷基而列舉者以外，還可列舉十一烷基、月桂基、棕櫚基、硬脂基等。作為R3〜I之C1〜C20之醯基’可列舉：甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、特戊醯基、己醯基、辛醯基、癸醯基、月桂醯基、肉豆蔻醢基、棕櫚醯基、硬脂醯基等。作為咪唑化合物，具體而言，例如可列舉：咪唑、κ甲 135032.doc 19- 201002753 基咪唑、2-甲基咪唑、3-甲基咪唑、4_甲基咪唑、5_甲基咪唑、1-乙基咪唑、2-乙基咪唑、3_乙基咪唑、4_乙基咪唑、5-乙基咪唑、1-正丙基咪唑、2_正丙基咪唑、丨·異丙基咪唑、2-異丙基咪唑、1-正丁基咪唑、2_正丁基咪唑、 1 -異丁基咪唑、2-異丁基咪唑、2-十一烷基_丨H_咪唑、2_ 十七烷基-1H-咪唑、1，2-二甲基咪唑、丨，3_二甲基咪唑、 2,4-二甲基咪唑、2-乙基-4-曱基咪唑、丨_苯基咪唑、2_笨基-1H-咪唑、4-甲基-2-苯基-1H_咪唑、2_苯基_4•甲基咪唑、1-苄基-2-甲基咪唑、κ苄基_2_苯基咪唑、丨_氰基乙基_2-甲基咪唑、1_氰基乙基_2_乙基甲基咪唑、丨_氰基乙基-2-十一烷基咪唑、丨_氰基乙基_2_苯基咪唑、2_苯基咪唑異三聚氰酸加成物、2_甲基咪唑異三聚氰酸加成物、苯基_4,5_二經基甲基咪唑、2-苯基-4-甲基羥基甲基咪嗤、1-氰基乙基-2-苯基-4,5-二（2_氰基乙氧基）甲基咪唑、氣化1-十二烷基_2_曱基_3_苄基咪唑鑌、卜苄基_2_苯基咪唑鹽酸鹽等。 V/; 該等中，更好的㈣化合物是選自由2_甲基㈣、2_乙基4-甲基咪唑、2_十一烷基咪唑以及苯基·4_甲基羥基甲基咪唑所組成之群中的至少丨種。 ;述芳香族羧酸化合物與咪唑化合物之晶蘢錯合物-要為上述範圍之芳香族缓酸化合物及味。坐化合物，則對其組合並i牯則 "，、特別限制，其中，更好的是：由選自以 3,5_二羥基苯甲酸、間苯二曱酸、對苯二甲酸、5_第三丁土門苯T酉夂、5-；6肖基間苯二甲酸、5_經基間苯二子酸、 135032.doc •20- 201002753 偏本二.甲酸、均公 Μ·萘二甲酸以及广甲酸、均苯四甲酸、2,6_萘二甲酸、少1種芳香族_二物一，甲:二苯甲嗣所組成之群中的至唾以及2-苯L基4,、2_乙基基味嗤、2_十-貌基咪少_米唾化^Λ5-經基甲基❹所組成之群中的至化口物所形成的晶蘢錯合物。 (新穎之晶籠錯合物）装巾&選自以均苯三甲酸、2,6·萘二甲酸、14 種’與一甲I一本甲酮所組成之群中的至以式（II) [化 13]ΠΙ) [wherein, R2 represents a hydrogen atom, an alkyl group of Cl~ci〇, a phenyl group, a benzyl group or a cyanoethyl group, and R3 to R5 represent a hydrogen source? , a nitro group, a hydroxyl atom, an alkyl group of ci~c2, a phenyl group, a benzyl group, a hydroxymethyl group or a fluorenyl group of C1 to C20. The compound represented by || is not particularly limited. Examples of the alkyl group of C1 to C10 of R2 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a cyclopropyl group, a butyl group, an isobutyl group, a second butyl group, a tert-butyl group, and a cyclobutyl group. , cyclopropylmethyl, pentyl, isopentyl, 2-methylbutyl, neopentyl, 1-ethylpropyl, hexyl, isohexyl, 4-decylpentyl, fluorenylmethylpentyl, 2 -methylpentyl, methylpentyl '3,3-dimethylbutyl, 2,2-didecylbutyl, dimethylbutyl, hydrazine, 2-dimethylbutyl, 13-dimethyl Butyl, 2,3-didecylbutyl, ^ethylbutyl, 2-ethylbutyl, octyl, decyl, decyl and the like. Examples of the alkyl group of C1 to C20 in the range of R3 to Rs include an undecyl group, a lauryl group, a palmity group, and a stearyl group, in addition to the alkyl group as & Examples of the thiol group of C1 to C20 of R3 to I include a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl group, a pentyl group, a pentylene group, a hexyl group, a decyl group, and a fluorenyl group. , laurel base, myristyl, palm sulfhydryl, stearinyl and the like. Specific examples of the imidazole compound include imidazole, κ-A 135032.doc 19-201002753-based imidazole, 2-methylimidazole, 3-methylimidazole, 4-methylimidazole, 5-methylimidazole, and 1 -ethylimidazole, 2-ethylimidazole, 3-ethylimidazole, 4-ethylimidazole, 5-ethylimidazole, 1-n-propylimidazole, 2-n-propylimidazole, hydrazine-isopropylimidazole, 2-isopropylimidazole, 1-n-butylimidazole, 2-n-butylimidazole, 1-isobutylimidazole, 2-isobutylimidazole, 2-undecyl-丨H-imidazole, 2_17 Alkyl-1H-imidazole, 1,2-dimethylimidazole, indole, 3-dimethylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-mercaptoimidazole, indole-phenylimidazole , 2_styl-1H-imidazole, 4-methyl-2-phenyl-1H-imidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, κbenzyl _ 2-phenylimidazole, hydrazine-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethylimidazole, hydrazine-cyanoethyl-2-undecylimidazole, hydrazine _Cyanoethyl-2-phenylimidazole, 2-phenylimidazole isocyanurate adduct, 2-methylimidazolyl isocyanurate adduct, phenyl _4,5-di-based Methyl , 2-phenyl-4-methylhydroxymethylimidazolium, 1-cyanoethyl-2-phenyl-4,5-di(2-cyanoethoxy)methylimidazole, gasification 1- Dodecyl 2_indenyl_3_benzylimidazolium, benzylidene-2-phenylimidazolium hydrochloride, and the like. V/; Among these, the more preferred (iv) compound is selected from the group consisting of 2-methyl (tetra), 2-ethyl 4-methylimidazole, 2-undecylimidazole and phenyl 4-methylhydroxymethylimidazole. At least one of the group consisting of. The crystal entangled compound of the aromatic carboxylic acid compound and the imidazole compound is an aromatic acid retardant compound and a taste in the above range. When the compound is taken, it is combined and is particularly limited, wherein, more preferably, it is selected from 3,5-dihydroxybenzoic acid, isophthalic acid, terephthalic acid, and 5 _Third butadiene benzene T 酉夂, 5-; 6 octyl isophthalic acid, 5 _ phenyl benzoic acid, 135032.doc • 20- 201002753 partial two. Formic acid, both Μ · naphthalene dicarboxylic acid And toluic acid, pyromellitic acid, 2,6-naphthalenedicarboxylic acid, one less aromatic _dione, a: a group of benzophenone to saliva and 2-phenyl L group 4, 2—Ethyl-based miso, 2—10---------------------- (Innovative crystal cage complex) The towel & is selected from the group consisting of trimesic acid, 2,6 naphthalene dicarboxylic acid, 14 species and one methyl group I ketone. II) [Chem. 13]

[式中，R2表示氫原子、C1〜Cl〇之烷基、笨基、苄基或氣基乙基，R3〜Rs表示氫原子、硝基、鹵素原子、C1〜C20之烷基、苯基、苄基、羥基曱基或C1〜C20之醯基。]所表示之咪唑化合物中的至少丨種所形成的晶籠錯合物，係一種新穎之晶籠錯合物。作為（B)成分晶籠錯合物之製造方法，可藉由將上述芳香族羧酸化合物與咪唑化合物直接混合、或者在溶劑中風合而獲得（B)成分晶籠錯合物。另外，當為低沸點之物質 135032.doc 21 201002753 或者商蒸氣壓之物質時，可藉由使該等物質之蒸氣作用於上述芳香族叛酸化合物，而獲得目標之晶籠錯合物。另外，亦可藉由用兩種以上之口米唾化合物與上述芳香族致酸化合物反應’而獲得由三種成分以上之多種成分所形成的晶籠錯合物。進而’可首先生成上述料⑽酸化合物與某種咪唑化合物的晶籠錯合物，然後以如上所述之方法使該晶籠錯合物與其他咪唑化合物進行反應，從而獲得目標之晶籠錯合物。、 η 對所獲得之晶籠錯合物之結構，可藉由熱分析（tg (thermogravimetry，熱重量分析）及 dta (differential thermal analysis，示差熱分析》、紅外線吸收光譜〇R)、χ 射線圖案、固體NMR (nuclear magnetic res〇nance，磁核共振）光譜等加以確認。另外，對晶籠錯合物之組成可藉由熱分析、W-NMR光譜、高效液相層析法（HpLC)、元素分析等加以確認。對（B)成分晶籠錯合物之5〇%粒徑並無特別限定，通常約為0·01〜80 μηι，較好的是約〇〇1〜3〇 μηι，更好的是約 0.1〜20 μιη之範圍。若為平均粒徑超過約8〇 μπι的晶籠錯合物’則密封時該晶籠錯合物粒子無法進入至半導體之配線之間，故而較好。再者’ 50〇/〇粒徑係指將粉體整體設為1 〇〇%而作出累積曲線時’該累積曲線達到5〇。/0之粒徑。本發明之環氧樹脂組合物包含上述成分及成分即可’另外’亦可為除（A)成分及（B)成分以外還包含（〇無機 135032.doc 22- 201002753 填充劑的半導體固態密封用環氧樹_合物。機：Γ:::半導體固態密封用環氧樹脂組合物之(c)無機填充劑並無特别限制溶融而得之球狀二氧化…了歹J舉石兴破璃、藉由火蹈狀二氧化石夕、社曰m 溶膠-凝耀法等製造之球仆石，1 夕、氧化1呂、滑石、氮化敍、氮種^上鎮、石夕酸鎂等，該等可單獨使用，亦可使用2 在本發明之環氧樹脂組合劑而使用，亦()成刀既可作為硬化化促進劍…劑而使用，於⑻成分為硬八右麻 …寺，本發明之環氧樹脂組合物亦可進一步含有硬化劑。作盔… J 7 反岸而使^ 要為與環氧樹脂令之環氧基 -而使環氧_硬化的化合物，則無特別限制。作為此 -用可自先前慣用作環氧樹脂之硬化劑者中選擇任族=巷例如，可列舉:脂肪族胺類、脂環族及雜環方香族胺類、改性胺類等胺系化合物"米唑系化合物，口米口坐啦&乂 uw '系匕系化人物酿胺系化合物，賴系化合物，朌㈣化合物’硫醇系化合物，醚系化合物，硫 -’、’、化合物，脲系化合物，硫脲系化合物，路合物，磷系化合物，酸奸系化合石夕化合物，錯合物等。系化合物’活性合:為硬化劑及硬化促進劑，具體而言可列舉例如以下化 1，3-丙二胺、乙四胺、四乙作為月曰肪族胺類，例如可列舉：乙二胺、乙二胺、丁二胺、己二胺、二乙三胺、= 135032.doc •23- 201002753 =胺、二丙二胺、二甲基胺基丙基胺、二乙基胺基丙基胺、三甲基已二胺、戊二胺、雙（2_二甲基胺基乙基）醚、五甲基—乙二胺、烷基_第三單胺、丨，‘二氮雜雙環（2,2,2) 辛，元（一乙—胺）、n，n，n'，n'-四甲基己二胺、N，N，N，,N、四 1基丙二胺、N，N,N,，N，·四甲基乙二胺、N，N-二甲基環己胺—丁基胺基丙基胺、二甲基胺基乙氧基乙氧基乙醇、二乙醇胺、二甲基胺基己醇等。作為舳％私及雜環族胺類，例如可列舉：哌啶、哌嗪、孟烷=胺、異佛爾酮二胺、甲基嗎啉、乙基嗎啉、，’N —(—曱基胺基丙基）六氫_均三嗪、39_雙（3_胺基 ^基）-2,4,8，10_四氧雜螺（5,5)十—烷加合物、斗胺基乙基广秦—甲基胺基乙基哌嗪、雙（4-胺基環己基）甲烷、 N，N--甲基旅嗓、1,8_二氮雜雙環（4,5,〇)十一稀_7等。 ::為芳香族胺類，例如可列舉：鄰苯二胺、間苯二胺、對苯一胺、一胺基二苯基甲烧、二胺基二苯基礙、节基甲 , S胺、=甲基苄基胺、間二甲苯二胺、吡啶、曱吡啶、 α-甲基苄基甲基胺等。作為改性胺類，例如可列舉：環氧化合物加成多胺、邁克爾（MiChael)加成多胺、曼尼希（Ma—h)加成多胺、硫腺加成多胺、酮類封鏈多胺、二氰基二酿胺、胍、有機酸酿胼、二胺基順丁梳_技貝〗肺一腈、胺醯亞胺、三氟化硼-哌啶錯合物、三氟化硼-單乙胺錯合物等。乍為米坐系化口物’例如可列舉：咪唑、卜甲基咪唑、 2-甲基味唾、3-甲基咪„坐、"基味…甲基味嗤、】_ 135032.doc -24- 201002753[wherein, R2 represents a hydrogen atom, an alkyl group of C1 to Cl〇, a strepyl group, a benzyl group or a gas group ethyl group, and R3 to Rs represents a hydrogen atom, a nitro group, a halogen atom, an alkyl group of C1 to C20, a phenyl group; , benzyl, hydroxyindenyl or a C1 to C20 fluorenyl group. The crystal cage complex formed by at least one of the imidazole compounds represented by the present invention is a novel crystal cage complex. As a method for producing the cage compound of the component (B), the cage compound of the component (B) can be obtained by directly mixing the above aromatic carboxylic acid compound with an imidazole compound or by subjecting it to a solvent in a solvent. Further, when it is a substance having a low boiling point of 135032.doc 21 201002753 or a substance of a commercial vapor pressure, a target crystal cage compound can be obtained by allowing a vapor of the substance to act on the above aromatic acid-removing compound. Further, a crystal cage complex formed of a plurality of components of three or more components can be obtained by reacting two or more kinds of oral saliva compounds with the above aromatic acid-forming compound. Further, a crystal cage compound of the above-mentioned material (10) acid compound and an imidazole compound may be first formed, and then the crystal cage complex is reacted with other imidazole compounds in the manner described above to obtain a target crystal cage error. Compound. η The structure of the obtained crystal cage complex can be analyzed by thermal analysis (tg (thermogravimetry) and dta (differential thermal analysis), infrared absorption spectrum 〇R), χ ray pattern Solid NMR (nuclear magnetic resonance) spectroscopy, etc., and the composition of the crystal cage complex can be analyzed by thermal analysis, W-NMR spectroscopy, high performance liquid chromatography (HpLC), It is confirmed by elemental analysis, etc. The particle size of the 5 % by weight of the cage compound of the (B) component is not particularly limited, and is usually about 0. 01 to 80 μη, preferably about 1 to 3 μm. More preferably, it is in the range of about 0.1 to 20 μm. If it is a crystal cage complex having an average particle diameter of more than about 8 μm, the crystal cage complex particles cannot enter between the wirings of the semiconductor when sealed, so Further, '50 〇 / 〇 particle size means that when the powder is set to 1 〇〇 % as a whole and the cumulative curve is made, the cumulative curve reaches 5 〇. / 0. The epoxy resin composition of the present invention. Including the above ingredients and ingredients can be 'other' can also be divided (A In addition to the component and the component (B), the epoxy resin compound for semiconductor solid-state sealing of the inorganic 135032.doc 22-201002753 filler is included. Machine: Γ::: epoxy resin composition for semiconductor solid-state sealing ( c) Inorganic fillers are not spherically oxidized by special limitation of melting... 歹J 石兴兴、、、、、、、、、、、、、、、、、、、、、、、、、二二二二二二二二二二二Stone, 1 eve, oxidized 1 ll, talc, nitriding, nitrogen, upper town, magnesium oxalate, etc., these may be used alone, or may be used in the epoxy resin composition of the present invention, also () The knife can be used as a curing agent to promote the sword. The component (8) is a hard eight right temple. The epoxy resin composition of the present invention may further contain a curing agent. There is no particular limitation on the compound which is to be epoxy-hardened with an epoxy resin, and is selected as a hardener which has been conventionally used as an epoxy resin. For example, an amine group such as an aliphatic amine, an alicyclic group, a heterocyclic aromatic amine, or a modified amine may be mentioned. "Mesazole compound", mouth rice mouth sitting & 乂uw 'system 匕化 characterized amine compound, Lai compound, 朌 (4) compound 'thiol compound, ether compound, sulfur - ', ' , a compound, a urea compound, a thiourea compound, a road compound, a phosphorus compound, a sour compound, a compound, a complex compound, etc. a compound 'active combination: a hardener and a hardening accelerator, specifically For example, 1,3-propanediamine, ethylenetetramine, and tetraethyl may be exemplified as ruthenium aliphatic amines, and examples thereof include ethylenediamine, ethylenediamine, butanediamine, hexamethylenediamine, and diethylene Amine, = 135032.doc • 23- 201002753 = amine, dipropylenediamine, dimethylaminopropylamine, diethylaminopropylamine, trimethylhexamethylenediamine, pentamethylenediamine, bis (2 _Dimethylaminoethyl)ether, pentamethyl-ethylenediamine, alkyl-third monoamine, anthracene, 'diazabicyclo(2,2,2) octane, element (monoethylamine) ,n,n,n',n'-tetramethylhexamethylenediamine, N,N,N,,N,tetrakisylpropanediamine, N,N,N,,N,·tetramethylethylenediamine , N,N-Dimethylcyclohexylamine - Ylamino propylamine, dimethylamino ethoxyethoxy ethanol, diethanolamine, dimethylamino hexanol. Examples of the 舳% private and heterocyclic amines include piperidine, piperazine, montane=amine, isophoronediamine, methylmorpholine, ethylmorpholine, and 'N-(-曱). Aminopropyl)hexahydro-s-triazine, 39_bis(3-amino)yl-2,4,8,10-tetraoxaspiro(5,5)decane-alkane adduct Aminoethyl chloromethyl-methylaminoethylpiperazine, bis(4-aminocyclohexyl)methane, N,N-methyl guanidine, 1,8-diazabicyclo (4,5, 〇) Eleven _7 and so on. :: is an aromatic amine, for example, o-phenylenediamine, m-phenylenediamine, p-phenyleneamine, monoaminodiphenylmethane, diaminodiphenyl, benzylidene, S amine , = methylbenzylamine, m-xylenediamine, pyridine, hydrazine pyridine, α-methylbenzylmethylamine, and the like. Examples of the modified amines include epoxy compound addition polyamine, Michael (MiChael) addition polyamine, Mannich (Ma-h) addition polyamine, sulfur gland addition polyamine, and ketone seal. Chain polyamine, dicyandiamine, hydrazine, organic acid sputum, diamine cis-butyl comb _ _ _ _ lung l-nitrile, amidoximine, boron trifluoride-piperidine complex, trifluoro Boron-monoethylamine complex and the like.乍米米 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑咪唑- 201002753

乙基咪唑、2-乙基咪唑、3-乙基咪唑、4-乙基咪唑、5-乙基咪唑、1 -正丙基咪唑、2-正丙基咪唑、1 -異丙基咪唑、 2-異丙基p米啥、1 -正丁基味唾、2-正丁基11 米嗤、1 -異丁基咪唑、2-異丁基咪唑、2-十一烷基-1H_咪唑、2-十七烷基-1H-咪唑、1，2-二甲基咪唑、ι，3_二甲基咪唑、2,4-二甲基咪唑、2-乙基-4-曱基咪唑' 1 _苯基咪唑、2-苯基-1H-咪。坐、4-甲基-2-苯基-1H-咪唾、2-苯基-4-甲基0米嗤、1-节基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基_2-甲基咪唾、：!-氰基乙基-2-乙基_4-曱基咪唾、1-氰基乙基_2_十一烷基咪唑、1-氰基乙基-2-苯基咪唑、2-苯基咪唑異三聚氰酸加成物、2-曱基咪唑異三聚氰酸加成物、2_苯基_4,5_ 二羥基甲基咪唑、2-苯基-4-甲基_5_羥基甲基咪唑、丨_氱基乙基-2-苯基-4,5-二(2-氰基6氧基)甲基咪。坐、氣化小十二烷基-2-甲基-3-苄基咪唑、κ苄基_2_苯基咪唑鹽酸鹽等。作為味°坐琳系化合物，你丨& 1 伽例如可列舉：2-曱基咪唑啉、2_ 苯基咪唑啉等。作為醯胺系化合物之聚醯胺等。如可列舉二聚酸與多胺縮合所得Ethyl imidazole, 2-ethylimidazole, 3-ethylimidazole, 4-ethylimidazole, 5-ethylimidazole, 1-n-propylimidazole, 2-n-propylimidazole, 1-isopropylimidazole, 2 - isopropyl p-methane, 1-n-butyl-salt, 2-n-butyl 11 m, 1-isobutylimidazole, 2-isobutylimidazole, 2-undecyl-1H-imidazole, 2-heptadecyl-1H-imidazole, 1,2-dimethylimidazole, iota, 3-dimethylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-mercaptoimidazole 1 _Phenyl imidazole, 2-phenyl-1H-mi. Sit, 4-methyl-2-phenyl-1H-imidazole, 2-phenyl-4-methyl 0 m oxime, 1-pyryl-2-methylimidazole, 1-benzyl-2-phenyl Imidazole, 1-cyanoethyl-2-methylammonium, :!-cyanoethyl-2-ethyl_4-mercaptopurine, 1-cyanoethyl-2-undecylimidazole , 1-cyanoethyl-2-phenylimidazole, 2-phenylimidazolium isocyanurate adduct, 2-mercaptoimidazole isocyanurate adduct, 2_phenyl_4,5_ Dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 丨-mercaptoethyl-2-phenyl-4,5-di(2-cyanohexyloxy)methyl Kimi. Sit and gasify small dodecyl-2-methyl-3-benzylimidazole, κbenzyl-2-phenylimidazole hydrochloride, and the like. As the compound of the scent, the 丨 & 1 gamma may, for example, be 2-mercaptoimidazoline or 2-phenylimidazoline. As a guanamine-based compound, polyamine or the like. Such as the condensation of dimer acid and polyamine

作為i旨系化合物，例如Y 等活性羰基化合物等。牛羧齩之芳基酯及芳硫基酯至於酚系化合物、醇系人合物以及硫醚系化合物，例0物硫醇系化合物、醚系化舉：苯酚芳烷基樹脂、笼作為盼樹脂硬化劑，可列脂；苯酚酚醛清漆樹脂、凡土樹腊等芳烷基型酚樹驗紛酸清漆樹脂等紛酿清漆型 135032.doc '25. 201002753 齡樹脂，·該等之改性樹脂，例如環氧化或丁基化之酚醛清漆型酚樹脂等、二環戊二烯改性酚樹脂、對二甲苯改性酚樹脂、三苯酚烷烴型酚樹脂、多官能型酚樹脂等。另外， :列舉··多元醇、聚硫醇、多硫化物，2_(二甲基胺基甲基笨酚）、2,4,6-二（二甲基胺基甲基）苯酚、2,4,6_三（二甲基胺基甲基）苯酚之三_2_乙基己基鹽酸鹽等。作為脲系化合物、硫脲系化合物、路易斯酸系化合物，例如可列舉·丁基化脲'丁基化三聚氰胺、丁基化硫脲、三氟化硼等。作為磷系化合物，可列舉有機膦化合物，例如乙基膦、丁基膦等烧基膦以及苯基膦等—級膦；二甲基膦、二丙基膦等二燒基膦以及二苯基膦、甲基乙基膦等二級膦；三甲基膦、二乙基膦、三苯基膦等三級膦等。 :為酸酐系化合物，例如可列舉：鄰苯二甲酸酐、四氫鄰本—甲酸酐、六氫鄰苯二曱酸酐、甲基四氫鄰苯二曱酸酐、甲基六氫鄰苯二曱酸酐、内亞曱基軒、审盆 1 ^ " 土内亞甲基四氫鄰苯二甲酸酐、順丁烯二酸酐、四亞甲基順丁烯二酸酐、偏苯三曱酸酐、氣菌酸酐、均苯四曱酸酐、+ _电 ^ —坭珀酸酐、二苯甲酮四甲酸酐、乙二醇雙 (4扁— 甲@参和L JJt、 —1 )、甘油三（偏苯三曱酸酐酯）、甲基環己稀四曱酸酐、平4 _ ^壬二酸酐等。另外，作為鏽鹽系化合物、以及活性石夕化合物-銘錯合物’例如可列| .从鹽、二― .方基重氮鑌鹽、二芳基錤鹽、三芳基锍本基矽烷醇-鋁錯合物、三苯基甲氧基矽烷_鋁錯合 135032.doc -26- 201002753 物、過氧化石夕烧基-紹錯合物、錯合物等。土夕垸％-三（柳醛）鋁 :為上述硬化劑，特別好的是使用胺系化合物、㈣系化“勿、酚系化合物。酚系化合物之中紛樹脂硬化劑。的疋使用酚作：本發明之半導體密封用環氧樹脂組合物之製造方法，可使用例如捏合機、親、擠出成型機等，以不產生膝化之溫度、時間將包含特 ^ Λ 亏疋里&上述各成分以及其他添加物炫融、混練’冷卻後粉碎，然後再次成型，藉此“本發明之半導體密封用環氧樹脂組合物。而且，半導體密封用環氧樹脂組合物之製造方法亦可將利用加熱之熔融混練步驟省略。對於所製造之環氧樹脂組合物，根據其組成及製造方法之不同既可為固態亦可為液態，更好的是固態。當製成固態而加以使科，較好的是使無機填充劑之含量相對於環氧樹脂組合物整體為70〜95%。所使用之晶籠錯合物之量為與普通硬化劑、硬化促進劑相同之使用量即可’其取決於硬化方法。於使用加成型硬化劑，即與環氧基反應從而硬化劑分子必定會納入至經硬，樹月曰中的硬化劑之情形時，儘管硬化劑之使用量根據 1斤某长的树^之性質而有所不同，但通常以相對於環氧基莫耳，戶斤包藏之咪哇化合物（硬化劑及/或硬化促進劑）為 Ο^.ο莫耳左右的方式而使用晶蘢錯合物。另彳，於使用聚σ里硬化劑或光起始型硬J匕齊】，即硬化劑分子並不會納 I35032.doc -27- 201002753 入至樹脂中’而以觸媒方式誘導間之聚合加成反應的靡外挪虱基開％，引起寡聚物進劑而使用之情形時等，相另外於作為硬化促 =下即足夠。該等晶蘢錯合物可使請，或將2種以上混合使用。天可根據需要在本發明之半導體密封用環氧樹脂組合物中 "】、、加其他添加劑。作為其他添加劑，可列舉：乙稀基三f 乳基錢、乙絲三乙氧基㈣、γ_縮水甘油氧基丙基三甲氧基石夕烧、γ-縮水甘油氧基丙基三乙氧基石夕烧、γ甲基丙烯1氧基丙基二甲氧基矽烷、γ·甲基丙烯醯氧基丙基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ_胺基丙基三乙氧基矽烷、Ν-冷（胺基乙基）γ_胺基丙基三甲氧基矽烷、Ν_ β(胺基乙基）γ-胺基丙基三乙氧基矽烷、Ν_苯基个胺基丙基二曱氧基矽烷、Ν-苯基-γ-胺基丙基三乙氧基矽烷、丫_毓基丙基三甲氧基矽烷、γ-巯基丙基三乙氧基矽烷等矽烷偶合劑；重碳酸鈣、輕碳酸鈣、天然二氧化矽、合成二氧化矽、熔融二氧化矽、高嶺土、黏土、氧化鈦、硫酸鋇、氧化鋅、氫氧化鋁、氫氧化鎂、滑石、雲母、矽灰石、鈦酸鉀、硼酸鋁、海泡石、硬矽鈣石等填充劑；NBR (acrylonitrile-butadiene rubber，丁腈橡膠）、聚丁二稀、氣丁二烯橡膠、矽酮、交聯NBR、交聯BR (butadiene rubber，丁二烯橡膠）、丙烯酸系橡膠、芯-殼丙稀酸橡膠、胺基甲酸酯橡膠、聚酯彈性體、含官能基之液態 NBR、液態聚丁二烯、液態聚酯、液態多硫化物、改性矽 135032.doc -28- 201002753 酮、胺基曱酸酯預聚物等彈性體改性劑；六溴環癸烷、雙（二漠丙基）四溴雙酚A、異三聚氰酸三 (二溴丙基）酯、磷酸三（三溴新戊基）酯、十溴二苯基氧化物、雙（五溴）苯基匕院、三（三溴苯氧基）三嗪、伸乙基雙四溴鄰苯二甲醯亞胺、多溴苯基茚烷、溴化聚苯乙烯、四溴雙酚A聚碳酸酯、溴代氧化笨乙烯、聚丙烯酸五溴苄酯、峨酸三苯酯、填酸二曱笨酯、填酸三（二曱苯）酯、磷酸二苯甲苯酯、磷酸二苯二曱苯酯、磷酸曱苯基雙（二_ 2,6-二曱苯）酯、；酸2-乙基己基二苯酯、間苯二酚雙（二笨基）填酸酯、雙酚Α雙（二苯基）碟酸酯、雙酚a雙（二甲苯基）磷酸酯、間苯二酚雙（二_2,6_二曱苯）磷酸酯、磷酸三 (氣乙基）酯、磷酸三（氣丙基）酯、磷酸三（二氯丙基）酯、磷酸三（三溴丙基）酯、二乙基_nn_,(2_羥基乙基）胺基曱基膦馱知、陰離子草酸處理氫氧化鋁、硝酸鹽處理氫氧化鋁、尚溫熱水處理氫氧化鋁、錫酸表面處理金屬水合物、Examples of the i-based compound include a reactive carbonyl compound such as Y. Aryl carboxylate and arylthio ester of bovine carboquinone as a phenolic compound, an alcoholic compound, and a thioether compound, an example of a thiol compound, an ether system: a phenol aralkyl resin, a cage as a hope Resin hardener, can be listed as a grease; phenol novolak resin, arsenic-type phenolic tree, etc., varnish resin, etc. varnish type 135032.doc '25. 201002753 age resin, · such modification The resin is, for example, an epoxidized or butylated novolac type phenol resin, a dicyclopentadiene-modified phenol resin, a p-xylene modified phenol resin, a triphenyl alkane type phenol resin, a polyfunctional phenol resin or the like. In addition, the following are listed: polyol, polythiol, polysulfide, 2_(dimethylaminomethylphenol), 2,4,6-bis(dimethylaminomethyl)phenol, 2, 4,6-tris(dimethylaminomethyl)phenol tris-2-ethylhexyl hydrochloride, and the like. Examples of the urea compound, the thiourea compound, and the Lewis acid compound include butylated urea butyl butyl amide, butylated thiourea, and boron trifluoride. Examples of the phosphorus-based compound include an organic phosphine compound such as a mercaptophosphine such as ethylphosphine or butylphosphine, a phosphine such as phenylphosphine, a dialkylphosphine such as dimethylphosphine or dipropylphosphine, and a diphenyl group. a secondary phosphine such as a phosphine or a methylethylphosphine; a tertiary phosphine such as trimethylphosphine, diethylphosphine or triphenylphosphine; and the like. Examples of the acid anhydride-based compound include phthalic anhydride, tetrahydro-ortho-formic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, and methylhexahydrophthalic acid. Anhydride, Neiqi Xuanxuan, Physician 1 ^ " Methylenetetrahydrophthalic anhydride, maleic anhydride, tetramethylene maleic anhydride, trimellitic anhydride, gas Bacteric anhydride, pyromellitic anhydride, + _ ^ 坭坭酸酐、, benzophenone tetracarboxylic anhydride, ethylene glycol double (4 flat - A @ 参 and L JJt, -1 ), glycerol (p-benzene) Trianhydride anhydride), methylcyclohexanic acid anhydride, blister 4 _ 壬 dianhydride, and the like. Further, as the rust salt-based compound, and the active diarrhea compound-inger complex, for example, it can be listed as a salt, a di-n-butyl diazonium salt, a diaryl sulfonium salt, or a triaryl fluorenyl decyl alcohol. - aluminum complex, triphenyl methoxy decane - aluminum 135032.doc -26 - 201002753, peroxolite, sulphur-synthesis, complex, and the like.土垸 - - 三三 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - In the method for producing an epoxy resin composition for encapsulating a semiconductor according to the present invention, for example, a kneader, a pro-extrusion molding machine, or the like can be used, and the temperature and time without causing knee formation will include a special defect & Each of the above components and other additives are fused, kneaded, cooled, pulverized, and then molded again, whereby the epoxy resin composition for semiconductor encapsulation of the present invention is used. Further, the method for producing the epoxy resin composition for sealing a semiconductor may be omitted by a melt-kneading step by heating. The epoxy resin composition to be produced may be either a solid or a liquid, and more preferably a solid, depending on its composition and manufacturing method. When it is made into a solid state, it is preferable to make the content of the inorganic filler 70 to 95% based on the entire epoxy resin composition. The amount of the crystal cage complex to be used is the same as that of the ordinary hardener or the hardening accelerator. It depends on the hardening method. In the case of using a setting hardener, that is, reacting with an epoxy group so that the hardener molecule is necessarily incorporated into the hardening agent in the hard, tree-shaped sputum, although the amount of the hardening agent is based on a long tree of 1 kg The nature is different, but it is usually used in the form of 茏 . . 相对相对相对相对相对相对相对相对相对户户户户户户户户户户户户户哇哇哇哇哇哇哇哇哇哇哇哇哇哇哇哇哇Things. In addition, in the use of polysigmine hardener or photo-initiated hard J 匕], that is, the hardener molecules do not enter I35032.doc -27- 201002753 into the resin' and the catalyst-induced polymerization When the addition reaction of the addition reaction is carried out by a %, and the oligomer is introduced into a solution, it is sufficient, and the phase is sufficient as a hardening. These crystal entangled complexes may be used in combination or in combination of two or more. In the epoxy resin composition for semiconductor encapsulation of the present invention, other additives may be added as needed. As other additives, there may be mentioned: ethylene triflate, ethylene triethoxy (tetra), γ-glycidoxypropyltrimethoxy sulphur, γ-glycidoxypropyl triethoxylate. Xishao, γ-methacryl 1-methoxypropyl dimethoxydecane, γ·methacryloxypropyltriethoxydecane, γ-aminopropyltrimethoxydecane, γ-aminopropyl Triethoxy decane, hydrazine-cold (aminoethyl) γ-aminopropyltrimethoxydecane, Ν_β(aminoethyl)γ-aminopropyltriethoxydecane, Νbenzene Aminopropyl methoxy decyl decane, fluorenyl-phenyl-γ-aminopropyltriethoxy decane, 丫-mercaptopropyltrimethoxydecane, γ-mercaptopropyltriethoxydecane Isodecane coupling agent; calcium bicarbonate, light calcium carbonate, natural cerium oxide, synthetic cerium oxide, molten cerium oxide, kaolin, clay, titanium oxide, barium sulfate, zinc oxide, aluminum hydroxide, magnesium hydroxide, talc , mica, limestone, potassium titanate, aluminum borate, sepiolite, hard calcite, etc.; NBR (acrylonitrile-butadiene rubber, nitrile rubber), Butadiene, gas butadiene rubber, anthrone, crosslinked NBR, crosslinked BR (butadiene rubber, butadiene rubber), acrylic rubber, core-shell acrylic rubber, urethane rubber, poly Ester elastomer, liquid NBR containing functional groups, liquid polybutadiene, liquid polyester, liquid polysulfide, modified 矽135032.doc -28- 201002753 ketone, amino phthalate prepolymer and other elastomers Agent; hexabromocyclodecane, bis(diclopropyl)tetrabromobisphenol A, tris(dibromopropyl)isocyanate, tris(tribromoneopentyl)phosphate, decabromo Phenyl oxide, bis(pentabromo)phenyl fluorene, tris(tribromophenoxy)triazine, ethylidene bistetrabromophthalimide, polybromophenyl decane, brominated poly Styrene, tetrabromobisphenol A polycarbonate, brominated oxidized stupid ethylene, polypentabromobenzyl acrylate, triphenyl phthalate, diterpene acid ester, tris(phenylene) benzoate, phosphoric acid Phenyl tomate, diphenyl phenyl phosphate, bismuth bis(di-2,6-diphenyl) phthalate, 2-ethylhexyl diphenyl acid, resorcinol bis (diphenyl) ) acid filling , bisphenol bis(diphenyl) disc acid ester, bisphenol a bis (xylenyl) phosphate, resorcinol bis(di-2,6-diphenylene) phosphate, phosphoric acid three (gas B) Ester, tris(cyclopropyl) phosphate, tris(dichloropropyl) phosphate, tris(tribromopropyl) phosphate, diethyl_nn_, (2-hydroxyethyl)amino fluorenyl Phosphate, anionic oxalic acid treated aluminum hydroxide, nitrate treated aluminum hydroxide, still hot water treated aluminum hydroxide, stannic acid surface treatment metal hydrate,

鎳化合物表面處理氫氧化鎂、矽酮聚合物表面處理氫氧化鎂金π母、多層表面處理金屬水合物、陽離子聚合物處理虱氧化鎂等阻燃劑；高密度聚乙烯、聚丙烯、聚苯乙稀聚甲基丙稀酸甲自旨、聚氯乙烯、尼龍Μ、聚縮搭、聚越砜、聚鍵醯亞胺、聚對苯二甲酸丁二醋、_酮、聚炭酸、聚碼等卫程詩；增塑劑；正丁基縮水甘油喊本基水甘油驗、氧化苯乙烯、第三丁基苯基縮水甘油鱗、二 T® 一、戊一烯二環氧化物、苯酚、甲酚、第三丁酚等稀釋劑；捭吾卞土本曰1Μ，增強劑；著色劑；增稠劑；高級脂 135032.doc •29· 201002753 肪酸、高級脂肪酸醋、高級脂肪酸約等、例如巴西標搁或聚=烯系蝶等脫模劑等。對該等添加劑之添加量=特別限疋’可在能夠獲得本發明之效果的限度内適當地6 添加量。又另外，除環氧樹脂以外，本發明之半導體密封用環氧樹脂,合物中亦可含有其他樹脂。作為其他樹脂，可列舉：聚醋樹脂、丙烯酸系樹脂、石夕系樹脂、聚胺基甲酸醋脂等。、τ [實施例] 以下揭示實施例，但本發明並不受該實施例之任何限制。 [晶籠錯合物之製備] 製備以下之[表1]〜[表5]中所示之組合的晶籠錯合物。各晶籠錯合物係藉由[實施例、[實施例3]、[實施例丨叼所示之方法以及與該等相同之方法來製備。 [實施例2] 於3 L之三口燒瓶中，加入5_第三丁基間苯二甲酸18〇,〇 g、2-乙基-4-甲基咪唑107.1 g、以及甲醇81〇爪丨並攪拌，進行3小時加熱回流。冷卻後，進行過濾、真空乾燥，藉此獲得晶籠錯合物5-第三丁基間苯二曱酸/2_乙基_4_甲基味唾（1 : 1)201.3 g。對所獲得之晶籠錯合物，藉由ιΗ_ NMR、TG-DTA 以及 XRD (X - ray diffraction，X 射線繞射法）來確認其晶龍化。以相同之方法，製備實施例5、9、12、13、14、18、 135032.doc -30· 201002753 36、38、39、40、43、 23、28、29 ' 31、33、34、35 44、45之晶籠錯合物。 [實施例3] 於500 mL之三口燒瓶中，加入 1本—甲酸49_8 g及丙_ 3 00 ml並攪拌。然後，一邊加熱，— 逯滴加另外以60 ml之丙酮溶解之2-乙基基味嗤33l g。滴域，進行3小時加熱回流’冷卻、然後抽氣過遽。進行真空乾燥，藉此，獲得間苯二甲酸/2_乙基-4-甲基啼唾之晶籠錯合物(1: 1)79.2 g。對所獲得之晶籠錯合物，藉由1h_nmr、％ DTA以及XRD來確認其晶籠化。以相同之方法，製備實施例！、8、1〇、u、19、Η、 30、37、46之晶龍錯合物。 [實施例17] 於3 L之三口燒瓶中’加入込仁萘二曱酸43.2 ^、2_十一烷基咪唑44.5 g、以及乙酸乙酯1〇〇〇 ml並攪拌，進行3小時加熱回流。冷卻後，進行過濾、真空乾燥，獲得晶籠錯合物1，4-萘二曱酸/2-十一烷基咪唑〇 : i)85.9 g。對所獲得之晶籠錯合物，藉由〗H-NMR、TG-DTA以及XRD來確認其晶籠化。以相同之方法，製備實施例4、20、22、27、32、41之晶籠錯合物。表1〜表5中，「2E4MZ」表示2-乙基-4-甲基咪唑， 2MZ」表示2-甲基咪η坐，「Clllm」表示2 -十一院基味。坐，「2P4MHZ」表示2-苯基-4-甲基-5-羥基甲基咪唑， 135032.doc •31 - 201002753 「C17Im」表示2-十七烷基咪唑。 [表1] 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 No. S1 S2 S3 S4 S5 S6 S7 °米。坐 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ 芳香族 2,6-萘二 5-第三丁基間苯二 4,4’-二甲酸 5-硝基間對苯二 3,5-二羥基- 羧酸甲酸間苯二甲酸甲酸二苯甲酮苯二甲酸甲酸 2-萘甲酸主體：咪嗤 1:1 1:1 1:1 2:3 1:1 1:1 1:1 羧酸 (mmol) 400 810 300 144 800 200 200 咪。坐 (mmol) 400 972 300 288 960 200 200 溶劑丙酮甲醇丙明乙酸乙酯曱醇甲醇曱醇溶劑量 (ml) 400 810 360 315 1200 150 150 產量(g) 121.2 201.3 79.2 55.9 225.7 46.7 46.7 [表2] 實施例 8 實施例 9 實施例 10 實施例 11 實施例 12 實施例 13 實施例 14 實施例 15 實施例 16 No. S8 S9 S10 S1I S12 S13 SI4 S15 S16 p米峻 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 芳香族羧酸 2,6-萘二甲酸 5-硝基間笨二甲酸 5-第三丁基間苯二甲酸 4,4’-二曱酸二苯甲酮間笨二甲酸 3,5·二羥基苯甲酸均苯三甲酸 5-羥基間苯二甲酸對苯二甲酸主體：咪峻 1:1 1:2 1:1 2:3 1:1 1:1 1:1 1:1 1:1 羧酸 (mmol) 320 400 200 161 375 300 250 100 240 咪嗤 (mmol) 320 800 200 322 375 300 250 100 360 溶劑丙酮曱醇丙酮丙酮甲醇甲醇甲醇甲醇甲醇溶劑量 (ml) 800 1000 390 210 500 600 500 100 170 產量 (g) 94.1 133.2 57.4 63.0 78.4 54.3 69.1 21.0 41.5 -32- 135032.doc 201002753 [表3] 實施例 17 實施例 18 實施例 19 實施例 20 實施例 21 實施例 22 實施例 23 No. S17 S18 S19 S20 S21 S22 S23 °米。生 Clllm Clllm Clllm Clllm Clllm Clllm Clllm 芳香族羧酸 1，4-秦二甲酸均苯三甲酸 5-第三丁基間苯二甲酸間苯二甲酸偏苯三甲酸 5-硝基間苯二甲酸均苯四曱酸主體： π米嗤 1:1 2:3 1 1 1:1 1:1 1:1 1:1 羧酸 (mmol) 400 120 250 200 160 150 250 味嗓 (mmol) 200 180 250 200 160 150 250 溶劑乙酸乙酯甲醇丙W 乙酸乙 m 丙_ 乙酸乙酯甲醇溶劑量 (ml) 1000 320 250 1000 1000 750 1000 產量(g) 85.9 56.5 108.0 68.1 64.8 62.9 92.2 表3(續）實施例24 實施例25 實施例26 No. S24 S25 S26 咪吐 Clllm Clllm Clllm 芳香族羧酸 4,4’-二甲酸二苯甲酮 3,5-二羥基苯甲酸 5-羥基間苯二甲酸主體：咪唑 1:1 1:1 1:1 羧酸(mmol) 14.8 150 100 口米0坐(mmol) 14.8 150 100 溶劑乙酸乙酯丙酮甲醇溶劑量(ml) 30 250 50 產量(g) 7.0 51.5 23.5 -33· 135032.doc 201002753 [表4] 實施例27 實施例28 實施例29 實施例30 實施例31 No. S27 S28 S29 S30 S31 咪嗤 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 芳香族羧酸 1,4-萘二甲酸 2,6-萘二曱酸 5-硝基間苯二甲酸 5-第三丁基間苯二甲酸間苯二曱酸主體：咪口坐 1:2 1:2 1:2 1:1 1:2 羧酸 (mmol) 200 100 200 150 180 咪唑 (mmol) 400 200 400 150 360 溶劑乙酸乙酯甲醇甲醇丙酿1 曱醇溶劑量 (ml) 850 200 600 750 500 產量(g) 117.4 54.7 113.9 56.5 85.9 表4(續）實施例32 實施例33 實施例34 實施例35 實施例36 No. S32 S33 S34 S35 S36 口米口坐 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 芳香族羧酸 4,4’-二甲酸二苯甲酮對苯二甲酸偏苯三甲酸均苯三甲酸均苯四甲酸主體：咪峻 2:1 1:1 1:1 1:1 1:2 叛酸(mmol) 112 200 220 220 200 咪0坐(111111〇1) 56 200 220 220 400 溶劑乙酸乙酯曱醇曱醇甲醇甲醇溶劑量(ml) 35 400 1330 1200 1000 產量(g) 39.9 59.5 79.1 61.5 125.0 34- 135032.doc 201002753 [表5] 實施例37 實施例38 實施例39 實施例40 實施例41 實施例42 No. S37 S38 S39 S40 S41 S42 口米峻 2P4MHZ 2P4MHZ 2MZ 2MZ 2MZ 2E4MZ 芳香族羧 3,5-二羥基笨 5-羥基間笨二均笨四甲偏笨三曱 1，4-萘二 3,5-二羥基苯酸曱酸甲酸酸酸甲酸曱酸主體：咪嗤 2:3 1:1 1:1 1:1 1:1 1:1 羧酸 (mmol) 200 200 300 240 200 250 咪嗤 (mmol) 200 200 300 240 200 500 溶劑丙_ 甲醇甲醇甲醇乙酸乙酯丙酮+甲醇溶劑量㈣ 600 230 500 300 600 1000+100 產量(g) 55.0 64.6 95.5 58.4 55.2 54.3 表5(續）實施例43 實施例44 實施例45 實施例46 實施例47 實施例48 No. S43 S44 S45 S46 S47 S48 咪唾 2E4MZ 2E4MZ 2E4MZ 2E4MZ C17Im C17Im 芳香族羧酸均苯三甲酸均苯四甲酸偏苯三甲酸 1,4-萘二甲酸間笨二甲酸偏苯三甲酸主體：咪唑 1:1 1:2 1:1 1:1 1:1 1:1 叛酸(mmol) 480 200 300 200 100 20 口米。坐(mmol) 480 400 300 200 100 20 溶劑甲醇甲醇甲醇丙_ 曱醇曱醇落劑量(ml) 800 200 200 650 200 40 產量(g) 128.0 86.6 72.4 63.1 39.3 8.9 [環氧樹脂組合物之製造] 用實施例之晶籠錯合物作為硬化觸媒，以下述[表6]〜[表 11 ]所示之組成分別調配後，於1 00 °C下加熱混練5分鐘，冷卻後粉碎，製成半導體密封用環氧樹脂組合物。再者， •35· 135032.doc 201002753 示〇之咪唑化合物，密封用環氧樹脂表中之各組合物之添加量係以重量份來表另外，作為比較例，使用非晶蘢錯合物以[表12]中所示之組成同樣地製造半導體組合物。 (旋流試驗）Nickel compound surface treatment of magnesium hydroxide, anthrone polymer surface treatment magnesium hydroxide gold π mother, multi-layer surface treatment metal hydrate, cationic polymer treatment of magnesium oxide and other flame retardants; high density polyethylene, polypropylene, polystyrene Ethylene polymethyl methacrylate A, PVC, nylon fluorene, polycondensation, polysulfone, poly phthalimide, polybutylene terephthalate, ketone, polycarbonic acid, polycode Waiting for Wei Cheng poetry; plasticizer; n-butyl glycidol shouting water-based glycerol test, styrene oxide, tributyl phenyl glycidol scale, two T® one, pentane epoxide, phenol, Diluents such as cresol and tert-butylphenol; 捭吾卞土曰曰1Μ, enhancer; colorant; thickener; high-grade fat 135032.doc •29· 201002753 fatty acid, higher fatty acid vinegar, higher fatty acid, etc. For example, Brazil standard shelf or poly-olefin butterfly release agent. The amount of addition of the additives = special limit 疋 ' can be appropriately added in an amount of 6 to the extent that the effects of the present invention can be obtained. Further, in addition to the epoxy resin, the epoxy resin for semiconductor sealing of the present invention may contain other resins. Examples of the other resin include a polyester resin, an acrylic resin, a Shishi resin, and a polyurethane resin. τ [Examples] The examples are disclosed below, but the invention is not limited by the examples. [Preparation of Crystal Cage Complex] A crystal cage complex of the combination shown in the following [Table 1] to [Table 5] was prepared. Each of the crystal cage complexes was prepared by the methods of [Example, [Example 3], [Example 丨叼, and the like). [Example 2] In a 3-L three-necked flask, 5 to 3 -butylbutyl isophthalate, 〇g, 2-ethyl-4-methylimidazole, 107.1 g, and methanol, 81 〇, and The mixture was stirred and heated under reflux for 3 hours. After cooling, filtration and vacuum drying were carried out, whereby a crystal cage complex of 5-t-butylisophthalic acid/2-ethyl_4_methyl saponin (1:1) 201.3 g was obtained. The crystal cage complex obtained was confirmed to be crystallized by Η NMR, TG-DTA, and XRD (X-ray diffraction). In the same manner, Preparation Examples 5, 9, 12, 13, 14, 18, 135032.doc -30·201002753 36, 38, 39, 40, 43, 23, 28, 29 '31, 33, 34, 35 44, 45 crystal cage complex. [Example 3] In a 500 mL three-necked flask, 1 part of formic acid 49_8 g and propylene_300 ml were added and stirred. Then, while heating, 嗤 33 g of 2-ethyl-based miso dissolved in 60 ml of acetone was added dropwise. The dropping field was heated for 3 hours to cool down, and then evacuated. Vacuum drying was carried out, whereby 79.2 g of a crystal cage complex (1:1) of isophthalic acid/2-ethyl-4-methylindole was obtained. For the obtained crystal cage complex, crystal cage formation was confirmed by 1 h_nmr, % DTA, and XRD. In the same way, the examples were prepared! , 8, 1, 〇, u, 19, Η, 30, 37, 46 of the crystal dragon complex. [Example 17] In a 3-L three-necked flask, '4,5,2,2,4,4,4,4,4,4,4,4,4,1,4,4,1,4 . After cooling, filtration and vacuum drying were carried out to obtain a crystal cage compound 1,4-naphthalene dicarboxylic acid/2-undecylimidazolium: i) 85.9 g. The caged complex obtained was confirmed to be crystallized by H-NMR, TG-DTA and XRD. In the same manner, cage cage complexes of Examples 4, 20, 22, 27, 32, and 41 were prepared. In Tables 1 to 5, "2E4MZ" means 2-ethyl-4-methylimidazole, 2MZ" means 2-methylimine, and "Clllm" means 2-11. Sitting, "2P4MHZ" means 2-phenyl-4-methyl-5-hydroxymethylimidazole, 135032.doc •31 - 201002753 "C17Im" means 2-heptadecylimidazole. [Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 No. S1 S2 S3 S4 S5 S6 S7 ° m. 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ 2E4MZ Aromatic 2,6-naphthalene di 5-tert-butylisophthalic 4,4'-dicarboxylic acid 5-nitro-p-phenylene 3,5-dihydroxy-carboxylic acid 2-naphthoic acid benzophenone phthalic acid 2-naphthoic acid host: imi 1:1 1:1 1:1 2:3 1:1 1:1 1:1 carboxylic acid (mmol) 400 810 300 144 800 200 200 microphones. Sit (mmol) 400 972 300 288 960 200 200 Solvent Acetone Methanol Propyl Ethyl Acetate Methanol Methanol Solvent (ml) 400 810 360 315 1200 150 150 Yield (g) 121.2 201.3 79.2 55.9 225.7 46.7 46.7 [Table 2 Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 Example 16 No. S8 S9 S10 S1I S12 S13 SI4 S15 S16 p m 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ 2MZ aromatic carboxylic acid 2,6-naphthalene dicarboxylic acid 5-nitro-m-dioic acid 5-tert-butylisophthalic acid 4,4'-diphthalic acid benzophenone m-dicarboxylic acid 3,5· Dihydroxybenzoic acid trimellitic acid 5-hydroxyisophthalic acid terephthalic acid main body: Mi Jun 1:1 1:2 1:1 2:3 1:1 1:1 1:1 1:1 1:1 Carboxylic acid (mmol) 320 400 200 161 375 300 250 100 240 milazine (mmol) 320 800 200 322 375 300 250 100 360 solvent acetone sterol acetone acetone methanol methanol methanol methanol solvent amount (ml) 800 1000 390 210 500 600 500 100 170 Production (g) 94.1 133.2 57.4 63.0 78.4 54.3 69.1 21.0 41.5 -32- 135032.doc 201002753 [Table 3] Example 20 Example 18 Example 19 Example 17 Example 21 Example Example 22 23 No. S17 S18 S19 S20 S21 S22 S23 ° meters. Raw Clllm Clllm Clllm Clllm Clllm Clllm Clllm Aromatic carboxylic acid 1,4-methyl dicarboxylic acid trimesic acid 5-tert-butyl isophthalic acid isophthalic acid trimellitic acid 5-nitroisophthalic acid Pyromellitic acid host: π m嗤 1:1 2:3 1 1 1:1 1:1 1:1 1:1 carboxylic acid (mmol) 400 120 250 200 160 150 250 miso (mmol) 200 180 250 200 160 150 250 Solvent Ethyl acetate Methanol W Ethyl acetate propyl acetate ethyl acetate methanol Solvent (ml) 1000 320 250 1000 1000 750 1000 Production (g) 85.9 56.5 108.0 68.1 64.8 62.9 92.2 Table 3 (continued) Example 24 Example 25 Example 26 No. S24 S25 S26 Mpt Clllm Clllm Clllm Aromatic carboxylic acid 4,4'-dicarboxylic acid benzophenone 3,5-dihydroxybenzoic acid 5-hydroxyisophthalic acid Main body: Imidazole 1 :1 1:1 1:1 carboxylic acid (mmol) 14.8 150 100 m 2 sitting (mmol) 14.8 150 100 solvent ethyl acetate acetone methanol solvent amount (ml) 30 250 50 yield (g) 7.0 51.5 23.5 -33· 135032.doc 201002753 [Table 4] Example 27 Example 28 Example 29 Example 30 Example 31 No. S27 S28 S29 S30 S31 Mimi 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ aromatic carboxylic acid 1,4-naphthalene dicarboxylic acid 2,6-naphthalene dinonanoic acid 5-nitroisophthalic acid 5-tert-butyl isophthalic acid isophthalic acid main body: imi Sit 1:2 1:2 1:2 1:1 1:2 Carboxylic acid (mmol) 200 100 200 150 180 Imidazole (mmol) 400 200 400 150 360 Solvent Ethyl acetate methanol Methanol propyl 1 Sterol solvent amount (ml ) 850 200 600 750 500 Production (g) 117.4 54.7 113.9 56.5 85.9 Table 4 (continued) Example 32 Example 33 Example 34 Example 35 Example 36 No. S32 S33 S34 S35 S36 mouth mouth sitting 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ 2P4MHZ aromatic carboxylic acid 4,4'-dicarboxylic acid benzophenone terephthalic acid trimellitic acid trimellitic acid pyromellitic acid main body: Mi Jun 2:1 1:1 1:1 1:1 1: 2 oleic acid (mmol) 112 200 220 220 200 咪 0 sitting (111111 〇 1) 56 200 220 220 400 solvent ethyl acetate sterol sterol methanol methanol solvent amount (ml) 35 400 1330 1200 1000 yield (g) 39.9 59.5 79.1 61.5 125.0 34- 135032.doc 201002753 [Table 5] Example 37 Example 38 Example 39 Example 40 Example 41 Example 42 No. S37 S38 S39 S40 S41 S42 Mimi 2P4MHZ 2P4MHZ 2MZ 2MZ 2MZ 2E4MZ Aromatic Carboxylic Acid 3,5-Dihydroxy Stupid 5-Hydroxymethane Stupid Two Stupid Four Armor Stupid Triterpenoid 1,4-Naphthalene Di 3,5-Dihydroxybenzoic Acid Capric acid formic acid acid formic acid main body: amidine 2:3 1:1 1:1 1:1 1:1 1:1 carboxylic acid (mmol) 200 200 300 240 200 250 mil (mmol) 200 200 300 240 200 500 Solvent propylene _ methanol methanol methanol ethyl acetate acetone + methanol solvent amount (iv) 600 230 500 300 600 1000+100 yield (g) 55.0 64.6 95.5 58.4 55.2 54.3 Table 5 (continued) Example 43 Example 44 Example 45 Implementation Example 46 Example 47 Example 48 No. S43 S44 S45 S46 S47 S48 Sodium 2E4MZ 2E4MZ 2E4MZ 2E4MZ C17Im C17Im Aromatic carboxylic acid trimellitic acid pyromellitic acid trimellitic acid 1,4-naphthalene dicarboxylic acid stupid Formic acid trimellitic acid host: imidazole 1:1 1:2 1:1 1:1 1:1 1:1 acidosis (mmol) 480 200 300 200 100 20 mouth rice. Sit (mmol) 480 400 300 200 100 20 Solvent Methanol Methanol Methyl _ sterol oxime alcohol dosage (ml) 800 200 200 650 200 40 Yield (g) 128.0 86.6 72.4 63.1 39.3 8.9 [Manufacture of epoxy resin composition] The crystal cage complex of the example was used as a curing catalyst, and the compositions shown in the following [Table 6] to [Table 11] were separately prepared, and then heated and kneaded at 100 ° C for 5 minutes, cooled and pulverized. An epoxy resin composition for semiconductor sealing. Further, • 35· 135032.doc 201002753 The imidazole compound of the present invention, the amount of each composition in the epoxy resin for sealing is expressed in parts by weight, and as a comparative example, an amorphous yttrium complex is used. The composition shown in [Table 12] was similarly fabricated into a semiconductor composition. (swirl test)

對各實施例之環氧樹脂組合物進行壓片，成型為小片。使用阿基米德螺旋模具及轉注成形機，於175。。、壓力為 7—0 之條件下，對該等小片進行以鐘射出成形測定所得者之長度。駭初期旋流值以及於抓下經過叫時後之旋流值，由該等值計算出保持率（％)。 (膠化時間）使用膠化試驗器，於175°C下測定膠化時間。再者’鄰曱齡酚醛清漆環氧樹脂係使用環氧當量為195 的ESCN195LL(住友化學公司製造），笨酚酚醛清漆樹脂係使用OH當量為1〇3的PSM-4261(群榮化學工業公司製造），脫模劑係使用Refined Granular Carnauba(東亞化成製造），偶合劑係使用KBM-403(信越化學公司製造），二氧化矽係使用Denka FB-940A球狀二氧化矽（電氣化學工業公司製造）。 135032.doc -36- 201002753 [表6] 實施例49 實施例50 實施例51 實施例52 晶籠錯合物No. S1 S2 S4 S5 鄰甲酚酚醛清漆環氧樹脂 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 脫模劑 2 2 2 2 偶合劑 5 5 5 5 二氧化矽 900 900 900 900 硬化觸媒 5.926 6.035 5.405 5.834 旋流值(初始值)[cm] 117.5 127.2 117.7 155 旋流值(30°Cx96 h後)[cm] 67.8 85.8 61.2 146.5 旋流96 h後之保持率 57.7% 67.5% 52.0% 94.5% 膠化時間[S] 22 22.6 26.1 28,7 [表7] 實施例53 實施例54 實施例55 實施例56 實施例57 實施例58 晶籠錯合物No_ S8 S9 S10 S11 S13 S14 鄰甲酚酚醛清漆環氧樹脂 100 100 100 100 100 100 苯酚酚醛清漆；^脂 50 50 50 50 50 50 脫模劑 2 2 2 2 2 2 偶合劑 5 5 5 5 5 5 二氧化矽 900 900 900 900 900 900 硬化觸媒 7.267 4.572 7.414 5.97 5,754 7.119 旋流值(初始值)[cm] 43.7 68.7 72.3 75.2 99.8 170.0 旋流值(30°Cx96 h後)[cm] 33.2 29.8 54.2 36.5 76.3 170.5 旋流96 h後之保持率 76.0% 43.4% 75.0% 48.5% 76.5% 100.3% 膠化時間[S] 15.9 18.4 20.2 20.2 24.5 41.5 37- 135032.doc 201002753 [表8] 實施例 59 實施例 60 實施例 61 實施例 62 實施例 63 實施例 64 實施例 65 晶籠錯合物No. S17 S18 S19 S20 S21 S22 S23 鄰甲酚酚醛清漆環氧樹脂 100 100 100 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 50 50 50 脫模劑 2 2 2 2 2 2 2 偶合劑 5 5 5 5 5 5 5 二氧化矽 900 900 900 900 900 900 900 硬化觸媒 3.945 3.261 3.999 3.494 3.89 3.899 4.286 旋流值(初始值)[cm] 156.7 156.2 157.3 160.5 157.2 168.7 193.8 旋流值（30°Cx96 h 後)[cm] 94.2 125.2 97.8 105.2 119.5 145 198.3 旋流96 h後之保持率 60.1% 80.2% 62.2% 65.5% 76.0% 86.0% 102.3% 膠化時間[S] 33.2 33.6 34.1 38.1 40.3 42.3 58.5 [表9] 實施例66 實施例67 實施例68 實施例69 晶籠錯合物No. S27 S28 S29 S30 鄰甲酚酚醛清漆環氧樹脂 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 脫模劑 2 2 2 2 偶合劑 5 5 5 5 二氧化矽 900 900 900 900 硬化觸媒 3.149 3.149 4.244 4.361 旋流值(初始值)[cm] 158.5 151.2 170.5 192.7 旋流值(30°Cx96 h 後)[cm] 99.8 104.8 165 148.8 旋流96 h後之保持率 63.0% 69.3% 96.8% 77.2% 膠化時間[S] 37.7 38 39.8 43.4The epoxy resin composition of each example was tableted and formed into small pieces. Use Archimedes spiral mold and transfer molding machine at 175. . Under the condition that the pressure is 7-0, the length of the small pieces is measured by the bell injection molding. The initial swirl value and the swirl value after the call is taken, and the retention rate (%) is calculated from the values. (Gelification time) The gelation time was measured at 175 ° C using a gelation tester. Furthermore, the o-age aged novolac epoxy resin is ESCN 195 LL (manufactured by Sumitomo Chemical Co., Ltd.) having an epoxy equivalent of 195, and the POM-4261 (the RM equivalent of 1 〇 3) using a phenol equivalent of a phenol phenol varnish resin. Manufacturing), Refining Granular Carnauba (made by East Asia Chemicals Co., Ltd.), KBM-403 (manufactured by Shin-Etsu Chemical Co., Ltd.), and Denka FB-940A spherical antimony dioxide (Electrical Chemical Industry Co., Ltd.) Manufacturing). 135032.doc -36- 201002753 [Table 6] Example 49 Example 50 Example 51 Example 52 Crystal cage complex No. S1 S2 S4 S5 o-cresol novolac epoxy resin 100 100 100 100 phenol novolac resin 50 50 50 50 Release agent 2 2 2 2 Coupling agent 5 5 5 5 Ceria 900 900 900 900 Hardening catalyst 5.926 6.035 5.405 5.834 Swirl value (initial value) [cm] 117.5 127.2 117.7 155 Swirl value (30 °Cx96 h after)[cm] 67.8 85.8 61.2 146.5 Retention rate after swirling for 96 h 57.7% 67.5% 52.0% 94.5% Gelation time [S] 22 22.6 26.1 28,7 [Table 7] Example 53 Example 54 Example 55 Example 56 Example 57 Example 58 Crystal cage complex No_S8 S9 S10 S11 S13 S14 o-cresol novolac epoxy resin 100 100 100 100 100 100 phenol novolac; grease 50 50 50 50 50 50 Release agent 2 2 2 2 2 2 Coupling agent 5 5 5 5 5 5 Ceria 900 900 900 900 900 900 Hardening catalyst 7.267 4.572 7.414 5.97 5,754 7.119 Swirl value (initial value) [cm] 43.7 68.7 72.3 75.2 99.8 170.0 Swirl value (after 30 °C x 96 h) [cm] 33.2 29.8 54.2 36.5 76.3 170.5 Retention rate after swirling for 96 h 76.0 % 43.4% 75.0% 48.5% 76.5% 100.3% Gelation time [S] 15.9 18.4 20.2 20.2 24.5 41.5 37- 135032.doc 201002753 [Table 8] Example 59 Example 60 Example 61 Example 62 Example 63 Example 64 Example 65 Crystal cage complex No. S17 S18 S19 S20 S21 S22 S23 o-cresol novolac epoxy resin 100 100 100 100 100 100 100 phenol novolac resin 50 50 50 50 50 50 50 release agent 2 2 2 2 2 2 2 coupling agent 5 5 5 5 5 5 5 cerium oxide 900 900 900 900 900 900 900 Hardening catalyst 3.945 3.261 3.999 3.494 3.89 3.899 4.286 Cyclone value (initial value) [cm] 156.7 156.2 157.3 160.5 157.2 168.7 193.8 Swirl value (after 30 ° C x 96 h) [cm] 94.2 125.2 97.8 105.2 119.5 145 198.3 Retention rate after swirling 96 h 80.1% 80.2% 62.2% 65.5% 76.0% 86.0% 102.3% Gelation time [S] 33.2 33.6 34.1 38.1 40.3 42.3 58.5 [Table 9] Example 66 Example 67 Example 68 Example 69 Crystal cage complex No. S27 S28 S29 S30 o-cresol novolac epoxy resin 100 100 100 100 phenol novolac resin 50 50 50 50 release agent 2 2 2 2 coupling agent 5 5 5 5 dioxide 900 900 900 900 Hardening catalyst 3.194 3.149 4.244 4.361 Swirl value (initial value) [cm] 158.5 151.2 170.5 192.7 Cyclone value (after 30 °C x 96 h) [cm] 99.8 104.8 165 148.8 Retention rate after 96 h of cyclone 63.0% 69.3% 96.8% 77.2% Gelation time [S] 37.7 38 39.8 43.4

38- 135032.doc 201002753 [表 ίο] 實施例70 實施例71 實施例72 實施例73 晶籠錯合物No. S31 S32 S33 S34 鄰曱酚酚醛清漆環氧樹脂 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 脫模劑 2 2 2 2 偶合劑 5 5 5 5 二氧化矽 900 900 900 900 硬化觸媒 2.884 7.752 3.765 4.233 旋流值(相始值)[cm] 172.7 185.0 196.0 184.7 旋流值(30°Cx% h後)[cm] 137.2 104 169.5 188.3 旋流96 h後之保持率 79.4% 56.2% 86.5% 101.9% 膠化時間[S] 44 47.6 52.1 60 [表 11] 實施例 74 實施例 75 實施例 76 實施例 ΊΊ 實施例 78 實施例 79 實施例 80 晶籠錯合物No. S37 S38 S41 S42 S43 S44 S46 鄰曱酚酚醛清漆環氧樹脂 100 100 100 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 50 50 50 脫模劑 2 2 2 2 2 2 2 偶合劑 5 5 5 5 5 5 5 二氧化矽 900 900 900 900 900 900 900 硬化觸媒 3.092 3.935 7.267 4.798 5.815 4.307 5.925 旋流值(初始值)[cm] 182.5 199.7 74.5 98.7 123.3 160.8 117 旋流值 (30°Cx96 h後)[cm] 122.8 188.5 40 59.5 135.5 169.7 77,2 旋流96 h後之保持率 67.3% 94.4% 53.7% 60.3% 109.9% 105.5% 66.0% 膠化時間[S] 37.8 47.2 18.4 24.0 40.1 44.2 28.6 39- 135032.doc 201002753 [表 12] 比較例比較例1 比較例2 比較例3 比較例4 味0坐化合物 2E4MZ 2MZ Clllm 2P4MHZ 鄰甲酚酚醛清漆環氧樹脂 100 100 100 100 苯酚酚醛清漆樹脂 50 50 50 50 脫模劑 2 2 2 2 偶合劑 5 5 5 5 二氧化矽 900 900 900 900 硬化觸媒 2 2 2 2 旋流值(初始值)[cm] 50.3 19.2 121.5 153.7 旋流值(30°Cx96 h後)[cm] 24.5 14.7 64 61.8 旋流96 h後之保持率 48.7% 76.6% 52.7% 40.2% 膠化時間[S] 11.5 7.6 24.2 32.4 表中，「2E4MZ」表示2-乙基-4-曱基咪唑，「2MZ」表示 2-曱基咪唑，「Clllm」表示2-十一烷基咪唑，「2P4MHZ」表示2-苯基-4-甲基-5-羥基甲基咪唑。產業上之可利用性藉由使用本發明之半導體密封用環氧樹脂組合物，可確保密封材料之保存穩定性，保持在使用密封材料進行密封時之流動性，使密封材料高效率地硬化，從而可應對縝密之半導體電路。 40- 135032.doc38-135032.doc 201002753 [Table 00] Example 70 Example 71 Example 72 Example 73 Crystal cage complex No. S31 S32 S33 S34 o-nonphenol novolac epoxy resin 100 100 100 100 phenol novolac resin 50 50 50 50 Release agent 2 2 2 2 Coupling agent 5 5 5 5 Ceria 900 900 900 900 Hardening catalyst 2.884 7.752 3.765 4.233 Swirl value (phase start value) [cm] 172.7 185.0 196.0 184.7 Swirl value (30 °Cx% h after)[cm] 137.2 104 169.5 188.3 Retention after 96 h of cyclone 79.4% 56.2% 86.5% 101.9% Gelation time [S] 44 47.6 52.1 60 [Table 11] Example 74 Example 75 Implementation Example 76 Example 实施 Example 78 Example 79 Example 80 Crystal cage complex No. S37 S38 S41 S42 S43 S44 S46 O-nonphenol novolac epoxy resin 100 100 100 100 100 100 100 Phenolic novolac resin 50 50 50 50 50 50 50 Release agent 2 2 2 2 2 2 2 Coupling agent 5 5 5 5 5 5 5 Ceria 900 900 900 900 900 900 900 900 Hardening catalyst 3.092 3.935 7.267 4.798 5.815 4.307 5.925 Swirl value (initial value) [cm] 182.5 199.7 74.5 98.7 123.3 160.8 117 Swirl value (after 30 ° C x 96 h) [ Cm] 122.8 188.5 40 59.5 135.5 169.7 77,2 Retention rate after 96 h of cyclone 67.3% 94.4% 53.7% 60.3% 109.9% 105.5% 66.0% Gelation time [S] 37.8 47.2 18.4 24.0 40.1 44.2 28.6 39- 135032. Doc 201002753 [Table 12] Comparative Example Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Taste 0 sitting compound 2E4MZ 2MZ Clllm 2P4MHZ o-cresol novolac epoxy resin 100 100 100 100 Phenolic novolac resin 50 50 50 50 Release Agent 2 2 2 2 Coupling agent 5 5 5 5 Ceria 900 900 900 900 Hardening catalyst 2 2 2 2 Swirl value (initial value) [cm] 50.3 19.2 121.5 153.7 Swirl value (after 30 ° C x 96 h) [ Cm] 24.5 14.7 64 61.8 Retention rate after swirling for 96 h 48.7% 76.6% 52.7% 40.2% Gelation time [S] 11.5 7.6 24.2 32.4 In the table, "2E4MZ" means 2-ethyl-4-mercaptoimidazole, "2MZ" means 2-mercaptoimidazole, "Clllm" means 2-undecylimidazole, and "2P4MHZ" means 2-phenyl-4-methyl-5-hydroxymethylimidazole. INDUSTRIAL APPLICABILITY By using the epoxy resin composition for semiconductor encapsulation of the present invention, the storage stability of the sealing material can be ensured, and the fluidity at the time of sealing using the sealing material can be maintained, and the sealing material can be efficiently cured. This makes it possible to deal with well-conceived semiconductor circuits. 40- 135032.doc

Claims

201002753 X. Patent application scope: 1. An epoxy resin for semiconductor sealing (A) component and (B) component: (A) epoxy resin; lipid complex characterized by inclusion of lower (B) crystal cage '' contains (7) 丨) aryl (b2) with formula (II) [Chemical 1] aromatic carboxylic acid compound, and

R2 (Π) [wherein, R2 represents a hydrogen atom cyanoethyl group, R3 to R5 represents an alkyl group of C1 to C20, a phenyl group], at least j of the imidazole compounds, an alkyl group of C1 to C10, a phenyl group, a benzyl group or a non-gas atom, a nitro group, a halogen atom, a 'nodal group, a hydroxymethyl group or a C1 to C20. 2. A semiconductor solid-state sealing epoxy ruthenium, which is a long-lact resin composition. It is characterized by comprising the following components (A) to (C): (A) an epoxy resin; (B) a crystal cage complex containing (bl) an aromatic carboxylic acid compound, and (b2) a formula (II) ) [Chemical 2]

N

(Π) 135032.doc 201002753 [In the formula, R2 represents a halogen atom, an alkyl group of Cl~CIO, a phenyl group, a benzyl group or a cyanoethyl group] R_3 to Rs represents a hydrogen atom, a nitro group, a halogen atom, and C1 to C20. At least one of the imidazole compounds represented by the alkyl group, the phenyl group, the benzyl group, the hydroxymethyl group or the fluorenyl group of cl~C2〇; (c) an inorganic filler. The epoxy resin composition of Item 1 or 2, wherein the (b 1) aromatic phthalic acid compound is of the formula [Chemical 3]

(wherein nl represents any integer from 1 to 4; n2 represents any of 〇~4, Ri represents C1~6 alkyl group 'nitro, thiol' or formula (1-2) [Chemical 4]

(an integer in the formula; , ml represents any integer from 1 to 4; m2 represents any of 〇~2, where Rii represents a C1~6 alkyl group, a rock and a base, a certain γ-nitro group, a thiol group or a formula [Chemical 5]

135032.doc 201002753 (where q represents the integer 1 or 2; * represents the bonding position)) The compound represented. 4. The epoxy resin composition of claim 1 or 2, wherein the (bl) aromatic carboxylic acid compound is selected from the group consisting of 3,5-dihydroxybenzoic acid, isophthalic acid, and p-benzoic acid 5 - third Butyl isophthalic acid, 5-nitroisophthalic acid, 5-hydroxyisophthalic acid, trimellitic acid, trimesic acid, pyromellitic acid, 2,6-naphthalene dicarboxylic acid, 1, At least one of the group consisting of 4-naphthalenedicarboxylic acid and 4,4,-dicarboxylic acid dibenzophenone. 5. The epoxy resin composition according to item 1 or 2, wherein (B) the crystal cage complex is selected from (bl) selected from 3,5-dihydroxybenzoic acid, isophthalic acid, and stupid Dicarboxylic acid, 5 hexane di Le-butyl isophthalic acid, 5-nitroisophthalic acid, 5-hydroxyisophthalic acid, trimellitic acid, pyromellitic acid, pyromellitic acid At least one aromatic carboxylic acid compound of the group consisting of ruthenium, 2'6-naphthalenedicarboxylic acid, I4.naphthalene dicarboxylic acid, and 4,4'-dicarboxylic acid benzophenone, and (10) selected from the group consisting of Keimijun, 2_ethyl_4_methylmethyst,;: undecane

A crystal cage complex formed by at least one imidazole compound of the group consisting of a group consisting of a group consisting of a group consisting of a group of imidazoles and a group of 2, fluorenyl-5-hydroxymethyl- oxazole. a crystal cage complex comprising at least one selected from the group consisting of formic acid, 1,4-naphthalene dicarboxylic acid, and 4,4,_, and triterpenic acid of the formula (II), Dibenzoic acid dimercapto _ 2,6-naphthalene two composition [Chemical 6] 135032.doc 201002753 R*j R5 κ

B3 N [wherein, r2 represents a hydrogen atom, an alkyl group of Cl~CIO, a phenyl group, a benzyl group or a cyanoethyl group, and R3 to R5 represent a hydrogen atom, a nitro group, a halogen atom, an alkyl group of C1 to C20, and a benzene group. A crystal cage complex formed by at least one of an imidazole compound represented by a group, a benzyl group, a hydroxymethyl group or a fluorenyl group of C1 to C20. 135032.doc 201002753 VII. Designation of representative drawings: (1) The representative representative of the case is: (none) (2) The symbol of the symbol of the representative figure is simple: 8. If there is a chemical formula in this case, please reveal the best indication of the characteristics of the invention. Chemical formula: (none) 135032.doc