TW201006607A - Carrier for holding object to be ground - Google Patents

Abstract

This invention is to overcome the problem associated with the large-sized body of a carrier for grinding silicon wafers and to prevent partial cracks or early stripping occurring in the DLC film formed on the carrier surface to thereby increase the grinding efficiency. A blasting process is carried out on the surface of the body of the metal carrier so as to provide the rigidity resulted from surface hardening and compression residual stress to the surface, and the surface roughness is adjusted within the range of Ra: 0.05-0.85 μm, Rz: 0.09-1.99 μm to form the DLC film on the surface.

Description

[Technical Field] According to the present invention, the present invention relates to pressing a workpiece such as a dream wafer as a semiconductor element substrate between a pair of upper and lower fixed disks to which a polishing cloth is attached, and performing pressure- Then, while the polishing cloth or the object to be polished is rotated at the same time, the surface of the dream wafer is subjected to a carrier for fixing the object to be polished. [Prior Art] In recent years, in the semiconductor industry and other fields, in the manufacturing processes of germanium wafers, compound semiconductor wafers, aluminum magnetic disk substrates, and glass magnetic disks, the surface of these members is precisely polished. step. In this process, when the object to be polished such as a tantalum wafer is polished, it is generally used to hold the object to be polished, and has a fixing hole and the outer peripheral edge portion is provided with an internal gear or a sun gear of the double-side grinding machine. A carrier that engages the outer ring teeth. For example, Fig. 1 shows the appearance of a disk-shaped carrier (also referred to as "fixed frame") c used for polishing a silicon wafer. Among them, the fixing hole of the Shishi wafer is provided in combination with the shape of the ♦ wafer, and a plurality of water-abrasive supply holes for suspending the finely ground particles are also provided. 3 is an outer ring tooth provided on the outer circumference of the carrier C. 4 is a through-hole of various shapes for reducing the weight of the carrier c itself. The carrier C is very thin (0.5 to less than 1 mm) due to the cut wafer, and the carrier body is also made of a thin material, and because the (iv) wafer is polished together, it is required to have excellent wear and tear. Further, recently, (iv) wafers have a large object of 098116359 201006607 and a diameter of 12 吋 (about 30 cm) and a plurality of ruthenium wafers are mounted on one carrier C. The size of the carrier C forms a large object having a diameter exceeding lm. When such a large carrier C is handled, since a large deformation stress is applied, in many cases, the wafer is damaged or peeled off. Moreover, when the Shi Xi wafer is polished, since the carrier body is also polished, the fine particles generated at this time may cause the purity of the wafer to be lowered. In particular, in the future, high-quality silicon wafers are being used, and there is a fear that a large amount of metal ions are eluted from the carrier by polishing. The material review of the carrier body and the development of the surface treatment film have also become important issues for review. In order to solve the carrier problem as described above, conventional related carriers have the following proposals. For example, Patent Documents 1 and 2 disclose the use of a ruthenium molecular material reinforced with non-metallic glass fibers, and Patent Document 3 discloses the use of stainless steel. Metal materials such as SKH steel, SKD steel and SUJ steel. Further, Patent Document 4 discloses a metal carrier having a ceramic coating on the surface of a carrier. Patent Document 5 discloses a SK steel carrier coated with a metal-coated surface. Further, Patent Document 6 discloses a technique in which a ceramic particle is welded to a surface of a metal carrier, and then a DLC film (thin-like carbon film) is coated thereon, and Patent Documents 3 and 7 are proposed to be made of metal. A technique for directly forming a DLC film on the surface. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-038609 (Patent Document 2) Japanese Patent Laid-Open Publication No. JP-A No. Hei. No. Hei. Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. In the above-mentioned prior art, a method of forming a DLC film on the surface of a so-called metal ruthenium carrier body disclosed in Patent Documents 3 and 7 is used. The surface of the carrier body is polished, that is, mirror polished. This case means the carrier body disclosed in the above Patent Documents 3 and 7, since the thickness of the DLC film formed on the surface is in an extremely thin state of 0 1 μm to 2 Å/lm, it is necessary to trim the surface of the substrate into a mirror surface. That is, in the case of these techniques, if the mirror polishing called "polishing" is performed, the DLC film of 〇1μπι & right cannot be uniformly formed. However, according to the study by the inventors and the like, it has been found that when the mirror-polished carrier body is subjected to the formation of the DLC film on the mirror surface, the following problems occur. (1) Mirror polishing of the surface of the carrier body requires more work time, resulting in an increase in cost. In particular, when a DLC film having a thick G-shirt is formed, even if there is only a slight scratch, there is still a lot of defects in the DLC film. (2) Because the DLC film belongs to the amorphous form of carbon and nitrogen produced by a hydrocarbon-based gas, it is a large residue in the form of _(4). 098116359 5 201006607 Force's easy to peel off problem. In particular, if the surface of the thinner body is mirrored, the ship will be subjected to a large (four) stress plant. When the surface of the body is covered with a DLC film, it will become a special second. In this regard, the proposal of Document 3 limits the DLC_ = system to 〇.5 MPa or less, but it is known that the stress formation of such low residual stress is conditioned by the application of the plasma CVD method.溥骐 (3) Reuse only; DLC film, in addition to the difficulty of remaining DLC film, is more expensive because of mirror polishing, which results in a decrease in work efficiency and an increase in product cost. (4) Furthermore, the conventional DLC film exhibits hydrophobicity which is not easily water-repellent, and the aqueous slurry-like abrasive (for example, water in which the gel f is dispersed) does not uniformly disperse on the surface of the film even if it is twinned. The surface of the round surface is also unevenly contacted. Therefore, it is pointed out that the finishing precision of the polished surface is 4卩, the surface of the polished surface cannot be equalized, the grinding_parallelism (flatness) is lowered, and the grinding is determined to be a predetermined grinding. It takes a long time to solve the problem. (6) According to this, in addition to the enlargement of the recent carrier, it is also made of a thinner metal, and most of the various large (four) holes are difficult to avoid large deformation due to riding, which makes the DLC film easy. The problem of cracking and partial peeling occurs. (Means for Solving the Problem) In order to solve the above-mentioned problem of the conventional technique, the inventors obtained the following findings: 098116359 6 201006607 () The mirror surface polishing is not performed on the surface of the carrier body, and conversely, the grinding and grinding of the particles is performed. A treatment for the modification of a silk surface (hereinafter referred to as "processing spray treatment"), thereby applying a roughening to the surface, and applying stress or addition hardening to the surface to modify the surface to In the case of roughening and processing layers, the adhesion of the film can be improved by coating the DLC film. (2) The surface of the carrier body is subjected to the above-described swelling and blasting treatment to apply compressive residual stress or work hardening to the carrier body, whereby the rigidity of the carrier body ❿ can be improved, and the deformation degree of the carrier body can be reduced. () The film formed on the carrier body of the roughened/processed layer is microscopically formed into a gentle unevenness due to the roughening and the processing layer, so that the abrasive particles will be cut when the wafer is polished. It stays in the recess and improves the grinding efficiency. (4) The amorphous (tetra) shape is composed of _, and by controlling the nitrogen content to 12~30 at 〇/〇 (atomic %), the DIX film can be self-applied with abreast wear and softness to form a traceable The film quality of the deformed carrier body. In other words, the carrier for polishing an object to be polished according to the present invention is characterized in that a DLC film is formed on the surface of the metal surface having the roughened and processed layer via the roughening and processing layer. Further, the preferred solution for the use of the polishing material m according to the present invention is as follows: (1) The roughening and processing layer is blown by grinding particles composed of ceramic particles or metal ceramic particles, and is composed of fine unevenness. The roughened layer, 098116359 7 201006607 and exhibits a working layer of at least one of compressive residual stress or work hardening; (2) The surface roughness of the roughening and processing layer is adjusted to a value of 0.05 to 0. Within the range of 85 μΐη, the Rz value is adjusted to (4) 9 to 199 spleen range; (3) The surface roughness (four) value of the above roughening and processing layer is less than ±1; (4) The above DLC film has more than the above-mentioned thickness The surface roughness of the processed layer is Rz (0.09 to 1.99/xm) ' and the film thickness is 2 〇μηη or less; (5) The DLC film has a hydrogen content of 13 to 3 〇 atom%, and the rest is a solid form of carbon. Hydrocarbon film; (6) The above-mentioned metal carrier system is composed of a metal or alloy selected from the group consisting of special steels such as Shao alloy, titanium alloy, Wuzhen steel, SK steel, and SKH steel. (Effect of the Invention) By adopting the above-described technical means of the present invention, the following effects can be obtained: (1) The processing of the roughening and the reinforced layer for forming the surface of the thin body is a mirror polishing of a conventional technique. Easy handling, reduced processing time and increased productivity.

/2) Because of the invention, the area of the DLC film formed on the roughened and processed layer becomes larger, and the adhesion is larger than that under the DLC thin film formed on the mirror-polished surface. (3) The roughening and processing layer formed according to the present invention is formed by applying a blasting treatment to the surface of the carrier 098116359 201006607, so that at least the surface is subjected to work hardening, and compressive residual stress is also generated, and thus the carrier The rigidity of the body rises. As a result, in the treatment of the body, the deformation is φ. (4) According to the carrier of the present invention, since the deformation at the time of disposal is small, even if the DLC film formed on the surface thereof is subjected to the domain residual stress, it is not Will be stripped. As a result, the method of forming the coffee film can be carried out not only by the plasma CVD method but also by ionization steaming (four), ion-plating method, money excitation method, etc. (5) the carrier obtained according to the present invention because of deformation at the time of disposal There are fewer, so the (4) wafers installed on the tilt will not be R to the target. As the conventional knowledge, there will be no occurrence of the Shi Xi wafer deviating from the carrier at the time of disposal. (6) With the invention of the money, the rough film of the slab is added to the surface of the wafer, because it is affected by the surface of the carrier, and it maintains the microscopic unevenness. Therefore, when the Shi Xi wafer is polished, the ultrafine particles such as colloidal dioxin contained in the money polishing _~0._ are easily left in the concave portion. Further, since such a concave portion is uniformly present on the surface of the DLC film, not only the polishing efficiency of the four wafers but also the polishing itself is equally performed to improve the quality. (7) The above-mentioned processing and spraying treatment is effective not only for the formation of the dlc film of the new (four) body, but also for the removal of the mx film, and thus 098116359 9 201006607 can be directly used for the pretreatment of the DLC film. It is advantageous in terms of cost. [Embodiment] Hereinafter, the structure of the carrier for polishing an object to be polished according to the present invention will be described together with the manufacturing method. (1) Treatment for forming a roughened and processed layer on the surface of a metal carrier body The following description will be made by using an example of stainless steel (SUS3〇4) for a metal carrier. The metal carrier is generally trimmed to a thickness of about OH 〇 mm, and the appearance is as shown in Fig. 1, and is provided with a plurality of circular or amorphous holes. Since the metal carrier is thin, it has a large bending (deformation) property during handling. Here, the present invention produces a roughened and processed layer on the surface of the carrier body by subjecting the surface of the carrier body shown in Fig. 1 to a process of blowing and grinding the particles. The grinding particles used in the processing of the spray treatment are made of a carbide such as Sic prescribed in JIS R6111, an oxide such as Al 2 〇 3, or a nitride such as TiN (average (four) is 1 〇 8 〇/mi) or such a metal with see, Co, etc., squeezing 'compressed air with a pressure of 〇2 to M5 MPa to form a roughened/processed layer having the following roughness, which is an important matter. Arithmetic mean roughness Ra : 〇.〇5~〇.85μιη Ten points average coarse sugar Rz : 0.09~ι.99μιη 098116359 10 201006607 In addition, if the pressure of the compressed air is less than 0.2MPa, the time of processing the spray treatment will be pulled. In addition to the long, it is not easy to get equal rough. On the other hand, if compressed air is used which is stronger than 0.5 MPa, the metal carrier body will be deformed and thus preferably avoided. Furthermore, the above-described processing and spraying treatment which is preferably applied to the present invention is to use the above-mentioned ceramic particles or cermet particles (as much as possible as hard particles (Hv: 300 to 2000)), depending on the flying speed ν: (3〇~ 1〇〇) speed above m/sec, blowing on the surface of the crucible body at an angle of 00° to 90°, and forming a rough surface having fine concavities and convexities on the surface of the lamina body, and forming a compressive residual stress or processing Hardening the treatment of any of the layers. In this treatment, if the hardness of the blown particles is less than Hv: 3 〇〇 or the flying speed is 3 〇 m/sec or less, there is a case where the preferred roughening and processing layer of the present invention cannot be formed. In addition, although the hardness of the above hard particles will also vary with the material of the carrier body, it is not possible to make a hygienic flaw, but it is preferably Hvg9〇〇, and the relevant flying speed v is preferably set to V: 8 〇m/sec or more, more preferably 1 〇〇 m/sec or more. In the present invention, the principle of focusing on the above-described roughness values (Ra, Rz, Rsk) is carried out. If the blown surface of the ground particles (i.e., the surface of the roughened surface formed by the processing spray treatment. + the surface of the processed layer) is used, the thimble-type roughness inspection is performed in the same manner as RaRazz. According to the results of the incorporation by the inventors, the Ra is often small and the RZ is large, and in the surface of the surface described in the present invention, Rz is more than 10 times. 098116359 11 201006607 If the DLC film is coated on the surface of the roughened and processed layer of this type, the state shown in Fig. 2 will be obtained. Namely, the DLC film 24 formed on the surface of the stainless steel carrier body 21 after the processing and blasting treatment is a very thin film. Therefore, substantially the DLC film 24 formed on the rough surface portion of the convex portion 23 having the determined Rz does not have a substantial effective film thickness even if the convex portion 25 is exposed or not exposed. Therefore, even if the DLC film 24 is only slightly worn out and only the convex portion 25 is exposed, the portion is selectively eluted during the stone etching operation (the aqueous slurry solution containing the abrasive material used in the polishing of the wafer) The eluted component adheres to the surface of the germanium wafer and becomes a cause of contamination. Further, in the figure, 22 means a rough degree substantially expressed by Ra. In the present invention, after the processing of the blasting treatment, if necessary, polishing can be performed by further polishing or polishing using a polishing paper of #1000 or more, and only the convex portion can be removed, and the above problem can be solved. In addition, it is also possible to replace the polishing or grinding paper by changing the method of blowing small steel balls or glass balls, and only selectively removing the convex portions. In addition, the reason for the Ra specification in the range of 〇〇5~〇.85/an is that the effect of the processing of the spray treatment is weak if it is less than 0.05 μm, and vice versa if it is larger than 0·85 μιη. The DLC film formed thereon lacks uniformity or causes the convex portion 25 to be easily exposed depending on film forming conditions, resulting in a lack of coating of the DLC film. Next, in the present invention, the roughness characteristics of the roughening and processing layers are related 098116359 12 201006607

The Rsk value is also within the established management value range. In other words, the roughness of the roughened and processed layer is managed by using a roughness curve skew value (Rsk) indicating deformation in the height direction. The Rsk value is defined as the square of the height (Z(x)) of the reference length (Ir) divided by the cube of the root mean square (Rq3).

In addition, the Rsk value is as shown in FIG. 4, and the roughness curve of the concave portion is wider than the convex portion, and the probability density function is distributed to the concave portion, and is defined as a positive value, and the opposite is defined as In the present invention, the "deformation" of the irrelevant Rsk value is specified to be ±1 or less in the present invention. In the present invention, in the roughness of the roughened and processed layer, the reason for attaching importance to the Rsk value is considered to be irrelevant to the surface roughness of the processed layer, and the Rsk φ value indicates the numerical value of the surface property of the DLC film. For example, the surface of the stainless steel substrate is trimmed by electropolishing into a mirror surface, and the processing of the blown grinding particles is performed. When the surface roughness of the surfaces is measured, the results shown in Table 1 can be obtained. 098116359 13 201006607 [Table 1] Treatment method Ra Rz Rsk 1 Electrolytic grinding surface 0. 013 ^ m 0. 139 /zm 1.096 2 Processing spray treatment surface (#1200 use) 0. 064 β m 0. 669 β m 0. 714 2Processing spray treatment surface (used in #600) 0. 227 μ in 1. 677 β m 0.434 From the results shown in Table 1, the measured values of surface roughness of Ra, Rz, etc. indicate roughness, but it is known. The correlation Rsk value is not so much a roughness, but rather a "deformation" of the measurement surface. Here, the inventors and the like also specify the Rsk value as needed in addition to the roughness Ra and Rz. The surface of the DLC film formed on the roughened and processed layer was experimentally found to have a large influence on the performance of the carrier for wafer polishing. In other words, on a non-recorded steel carrier having a roughened and processed layer having a Rsk value of less than ± 1, the DLC film formed by the coating is affected by the Rsk value and becomes "deformed" with microscopic relaxation. In the place where the "deformation" corresponds to the concave portion, a fine enamel wafer polishing material such as colloidal cerium oxide is retained, and it is judged that the polishing material particles improve the polishing efficiency of the ruthenium wafer. In particular, since the polishing material particle retention portion formed as described above is uniformly distributed across the entire DLC film, the polishing of the twin crystal is not only improved, but the entire polishing surface can be uniformly polished. (2) Effect of processing spray treatment The metal carrier body subjected to the processing and spraying treatment has the following characteristics. 098116359 14 201006607 (a) Processing spray treatment (blowing treatment of grinding particles) 'The treated surface of the carrier body is not only formed into a rough surface having fine unevenness, but also due to compressive residual stress and work hardening. The rigidity of the carrier body will increase. As a result, it is possible to suppress deformation such as "bending" or "twisting" which occurs when the carrier is transported or taken. Therefore, the rate of buccal damage caused by the cracking or peeling of the DLC film formed on the surface can be reduced as compared with the case where the surface of the carrier body is mirror-polished. ❹ On the other hand, the surface of the mirror-polished body of the DLC is thin, and the incidence of damage is increased by the formation of the mirror surface. Therefore, when the film is formed, the residual deer force is limited to 0.5 MPa to TW as the special city 3). In the case of (4), ^ in accordance with the method of the present invention, when the layer is roughened, the transfer disappears. As a result, in the formation of the DLC film, not only the electropolymerization cvd method but also the ionization method can be used. _Plate plating method, or Wei excitation method and other methods. ❿ _ outside' ® 3 shows the surface of the carrier body of the SUS3〇4 steel which has been subjected to the processing and spray treatment of the present invention, and the surface of the carrier body which has been subjected to mirror polishing such as electrolytic polishing, polishing (polishing), and the like. The results of observation using an electron microscope. The smear-impacted surface (4) suitable for the present invention is such that fine irregularities are uniformly generated across the entire field of view. In contrast, the electropolished surface (9) has a flat X-polished surface (c) and a slight polishing trace is found on the smooth surface. It is known from the enlarged photographs that the processing spray treatment surface 098116359 15 201006607 (that is, 'roughening and processing layer) suitable for the present invention is greatly increased by the presence of fine unevenness, and is greatly increased on the surface. The iris_joining area is not easily peeled off even when deformation, stretching, or compression occurs during handling of the carrier body. (C) The time required for the processing of the spray treatment is shorter than the case where the surface of the carrier body is mirror-polished, so that in addition to the improvement of the work efficiency, it can also be applied to the use of the DLC film when it is used again. Pretreatment in the case of the carrier (the treatment of removing the old DLC film can also be used). (3) Related carrier body (substrate) In order to enhance the effect of the above-described processing spray treatment, the following may be considered. For example, various stainless steels represented by SUS304; or titanium and titanium alloys, Ming and its alloys; or special steels such as SK steel, SKH steel, and SUJ steel are particularly suitable. (4) Method for forming DLC film coating method A method of coating a DLC film on the surface of a roughened surface of a carrier body formed by boiling and grinding particles, such as an ionized steam bonding method or an arc ion A plating method, a plasma excitation method, and a high-frequency/high-voltage pulse-overlapping plasma CVD method (hereinafter referred to as "plasma cvD method"). Hereinafter, the plasma CVD method will be described. Fig. 5 is a block diagram showing a silent CVD apparatus for forming a DLC film on the surface of a carrier which is formed by roughening and processing a layer as described above. The plasma CVD apparatus is a high-voltage pulse generating power source 44 for applying a high-voltage pulse to the 098116359 16 201006607 reaction vessel 41, and a body for processing the object (hereinafter referred to as "carrier body". In addition to the plasma generating power source 45 that generates the flue gas plasma around the 42, the conductor 43 and the carrier body 42 are simultaneously applied with an overlapping vibration 46 of the high voltage pulse and the high frequency voltage. The high voltage pulse generates a power source 44 and a plasma generating power source 45. Further, the conductor 43 and the carrier body 42 are connected to the superposition device 46 via the high voltage introduction portion.

In the plasma CVD apparatus, a gas introduction device (not shown) for introducing a film-forming organic gas into the reaction container 41 and a vacuum device (not shown) for pumping the reaction container 41 are respectively passed through a valve. 47a and 47b are connected to the anti-deer container 41. When the DLC film is formed on the surface of the object to be processed by using the plasma CVD apparatus, first, the carrier body 42 is placed at a predetermined position in the reaction container 41, and the vacuum device is operated to discharge the air in the reaction container 41. After deaeration, the organic gas is introduced into the reaction vessel 41 by a gas introduction device, and then the high frequency power from the plasma generation power source 45 is applied to the carrier body 42. Further, since the reaction container 41 is in an electrically neutral state by the grounding wire 48, the carrier body 42 relatively negatively generates positive ions which are generated around the negatively charged carrier body 42. Then, if a high voltage pulse (negative high voltage pulse) from the high voltage pulse generating means 44 is applied to the carrier body 42', the hydrocarbon is introduced into the gas battery, and the ions are induced by the surface of the carrier body 42. . By this treatment, a DLC film is formed on the surface of the carrier body 42 to form a film. In other words, in the reaction container 41, the DLC film which is finally composed of an amorphous solid hydrocarbon containing carbon and hydrogen as a main component is judged to be vapor-deposited around the carrier body 42 to form a surface state of the coated carrier body 42. The film is formed. The inventors have estimated that the DLC film layer composed of the amorphous solid carbonitride compound formed on the surface of the object to be processed by the above plasma CVD apparatus is formed by the following procedures (a) to (d). (a) Producing ionization of the introduced hydrocarbon gas (there is also a neutral particle known as "free radical"); (b) ion and radical radical change from the hydrocarbon gas impacting the negative voltage applied to the carrier body 42 (c) due to the energy at the time of collision, the CH with a small bond energy will be cut off, and then the activated C and hydrazine will repeat the polymerization reaction and polymerize, with carbon and hydrogen as the main components. The amorphous solid hydrocarbon is subjected to vapor deposition; (d) Then, if the reaction of the above (c) is produced, a DLC film composed of an amorphous solid hydrogen absorbing compound accumulation layer is formed on the surface of the carrier body 42. . Further, in the apparatus, the carrier body 42 may be subjected to metal plasma implantation by causing the high-voltage pulse to generate the output power of the power source 44 in accordance with the following changes (a) to (d).

(a) The case where the ion implantation is carried out in a key manner: 10 to 4 〇 kV 098116359 18 201006607 (b) The case where both ion implantation and film formation are performed: 5 to 2 〇 kV (C) Only the film formation is performed. : Hundreds of v to several kv (d) The case where sputtering is performed in a focused manner: hundreds of v to several kv Further, the above-mentioned high-voltage pulse generating source 44 may be repeatedly executed: Pulse width: ljiisec to 10 msec : 1 ~ multiple pulses. Further, the high frequency power output frequency of the plasma generating power source 45 can vary in the range of several tens of kHz to several GHz. The organic gas for film formation introduced into the reaction vessel 41 of the plasma CVD treatment apparatus is a hydrocarbon-based gas composed of carbon and hydrogen as shown in the following (A) to (C), and Si and A1 are added. Metal organic compounds such as Y, Mg, and the like. (A) Normal temperature (18°〇 under the gas phase: ch4, ch2ch2, c2h2, ch3ch2ch3, ch3ch2ch2ch3 (B) Liquid state at room temperature: c6h5ch3, c6h5ch2ch, c6h4(ch3)2, ch3(ch2)4ch3 , C6H12, C6H4C1 (c) Organic Si compound (liquid phase): (C2H502) 4Si, (CH30)4Si, [(CH3)4Si]2〇 The above-mentioned introduction gas in the reaction vessel 41 is in a gas phase state at normal temperature. The compound can be introduced into the reaction vessel 41 while the liquid phase state is gasified by heating, and the gas (vapor) is supplied into the reaction vessel 41 to form a DLC film. 098116359 19 201006607 ( 5) The DLC film of the present invention has the following characteristics as described above in the DLC film formed on the surface of the recording surface layer (4). (a) The ratio of carbon to hydrogen content constituting the DLC film is the film. Although it is hard and excellent in wear resistance, (4) lacks flexibility. Therefore, as a carrier body, the whole is made of a large and thin metal, and various holes of the size (4) are relatively large. , if the carrier takes a large material 18 when handling, If there is a lack of ductility (10), there will be cracks, and occasionally there will be a situation of detachment. The countermeasure of this phenomenon is that the composition of the present invention focuses on the ratio of thin (four) carbon to hydrogen, especially by η, which controls the amount of A, Material% (Ah, the DLC film can be imparted with abrasion resistance and flexibility. Specifically, the hydrogen content of the (10) film is set to 12 to 3 G atom% (at%), and the rest is carbon. The amount of the wire rib red DLC is _, which can be achieved by mixing (4) a compound having a different hydrogen content in the mesogenic gas for film formation. [Examples] (Example 1) In this example A mirror-polished surface is applied to the surface of the SK steel substrate, and a roughened/processed layer that is trimmed to a variety of surface roughness by processing the nozzle is directly formed into a DLC film having a different thickness. Then, the test pieces are supplied. Salt spray test

Investigate the surface roughness of the substrate and the resistance of the DLC film. 098116359 20 201006607 (1) Test substrate The test substrate was set to SK steel (annealed material of SK60), and a test piece having a width of 50 mm x a length of 70 mm x a thickness of 2 mm was prepared from the substrate. Then, the test piece was subjected to the following processing and blasting treatment of the pretreatment, and the surface roughness was expressed. (A) Processing spray treatment Ra: 〇.〇5~〇.74μιη, Rz: 0.09~5·55μιη (Β) For reference, mirror polishing of the following experiment was also described. ® a. Electrolytic grinding Ra: 0.013~〇.〇14μπι Rz : 0.14~0.16μιη b. Polishing and polishing Ra: 〇.〇15μιη RZ : 〇.2〇μηι In addition, 'Processing spray treatment system is to use particle size for particle size SiC in the range of 10 to 80 μm and subjected to blowing using 〇.3 MPa of compressed air. (2) Method for forming DLC film and film thickness DLC film was formed by using a plasma cVD method to form a DLC film containing Si〇2: 〇.8 atom/° and a thickness of 5 to 20 Mm for all test pieces. . ® (3) Test method and conditions The test piece on which the DLC film had been formed was subjected to a salt spray test prescribed in JIS Z2371 for 96 hours, and the presence or absence of red rust on the surface of the DLC film after the test was investigated. (4) Test results The thief silk material table 2 material. From this result, it was found that the DLC film test piece formed on the surface of the electrolytically polished surface (N〇1〇, u) and the polished surface (m) of the reference example having the mirror power was applied, even if the film of 0.5/mi was still No 098116359 21 201006607 Found the production of red noodles. The other two 'in the test piece which forms the DLC film on the substrate on which the rough surface 4 is applied by the processing of the present invention, which is affected by the rough surface degree, the DLC film having a thin Ra value or Rz value. (Νο·6, 7, 8, 9) The corrosion resistance is not enough, and red rust is found. However, it was confirmed that the surface roughness Rz was thicker (No. 1 to 8) in addition to the DLC thinness on the surface of the treated sprayed surface, and it was confirmed that no red scale was generated, and sufficient corrosion resistance was exhibited. On the other hand, a dlc film test piece formed on the surface of an electrolytic polishing surface (> ίο·1 〇Μΐ) or a polished abrasive surface (No 12) of an equivalent mirror surface as shown in the reference example, even if 〇·5 from the m film There is still no red rust. From the results of these tests, it is known that the surface of the substrate after processing and spraying has a DLC film if it has a roughness Ra: ~〇.74 from m, Rz: 〇.09~Ο.95#111. The thickness is set in the range of 0.5 to 20/xm, and the roughness of Ra: 0.74jtim, like: 1.99/mi, the thickness of the DLC film is set to 2.0 to 20 μm, and the larger the Rz value is, the base can be formed. The film in which the material components are dissolved. 098116359 22 201006607 [Table 2]

No. Pretreatment surface roughness (μηι) Thickness of DLC film 〇tm) Remark Ra Rz 0.5 1.0 1.5 2.0 3.0 5.0 10 20 1 Processing blasting treatment 0.050 0.09 〇〇〇〇Ο 〇Ο 适合 Suitable example 2 0.25 〇〇〇 〇〇〇〇〇3 0.85 Λ 〇〇〇〇〇〇〇4 0.230 0.46* Δ 〇〇〇〇〇〇〇5 0.71* Δ 〇〇〇〇〇〇〇6 0.89* X 〇〇〇〇〇〇〇7 0.740 0.95* X 〇〇〇〇〇〇〇8 1.99* XX Δ 〇〇〇〇〇9 5.55* XXXXXX 〇〇Comparative Example 10 Electrolytic grinding 0.014 0.14 〇〇〇〇〇〇〇〇Reference example 11 0.013 0.16 〇〇〇 〇〇〇〇〇12 Polishing and polishing 0.015 0.20 〇〇〇〇〇〇〇〇 (Remarks) (1) Test piece system SK60 (size width 50mmx length 70mmx thickness 1.5mm) Marking ※The polishing of the processing spray surface is performed. The adjusted Rz value (2) The measured value of the surface roughness was determined by measuring the highest value of the Ra system average Rz system at each of the three test pieces. • (3) Corrosion test system The salt spray test method specified in JIS Z2371 is applied for 96 hr. (4) Processing and spraying conditions: Compressed air pressure, 3 MPa, grinding SiC, particle size range 5 to 80 μιη. As shown in the reference example, the mirror state belongs to electrolytic polishing or polishing, and even if a roughening and processing layer is formed by performing the processing and spraying treatment, if a DLC having a thickness of at least Rz and a thickness of 20/m or less is formed, The film can be used to form the surface of the film 098116359 23 201006607. (Example 2) This example is directed to forming a DLC film which changes the hydrogen content on the surface of a SUS304 substrate, and investigates the hydrogen content, the resistance to bending deformation of the substrate, and the subsequent corrosion resistance. Sexual change. (1) Properties of test substrate and DLC film The test piece was set to be non-pound steel (SUS304). A test piece having a width of 15 mm x a length of 70 mm and a thickness of 1.8 mm was produced from the substrate. Then, the test substrate is subjected to a processing spray treatment on the entire surface, and a roughening treatment of Ra: 0.05 to 21.21 Mm and Rz: 0.1 to 0.99/zm is performed to reduce the hydrogen content of the roughened and processed layer. A test piece of 5 to 50% by atom and the balance of the carbon component was formed to have a thickness of 15/im. (2) Test method and conditions The test piece on which the DLC film had been formed was bent from the center to 18 Å. It is called a curved shape) and the appearance of the DLC of the curved portion is observed with a 20-times magnifying glass. Further, the bent test piece after the observation was immersed in an aqueous solution, and left at room temperature for 21 hours at 21 ° C to investigate the change in color tone caused by ions dissolved in the aqueous HCl solution. (3) Test results Table 3 is a brief summary of the test results. From the results of this test, it was found that the DLC film type test pieces No. 1, 2, and 3) having a small hydrogen content were given to Wo. When it is deformed, it will be found that the crack has occurred or it is a small area but it is a localized film shedding. It was confirmed that the DLC films lacked flexibility. On the other hand, 098116359 24 201006607 If the test piece after the bractling test is immersed in 1〇%Ηα, the cracked film (No. 3) will elute the metal ions from the unrecorded steel of the base material ( The amount of iron is mainly 3 volts (^ and Ni), and the aqueous solution of HC1 changes from colorless and transparent to yellowish green. In contrast, the DLC film (No. 4 8) having a hydrogen content of 1.5 to 59 atom% is /5: The aqueous solution of HC1 was still colorless and transparent, and it was found that even if the deformation of 9G° was imparted, the recording of the oil formed was in a state of oil formation. However, the more the nitrogen content of the DLC film, the softer it is, and Quality management tends to be difficult, so the present invention uses a hydrogen content of 13 to 30 atom%. [Table 3]

No. Substrate DLC film properties DLC film is the test result - * - 1 Remarks film thickness (μηι) Hydrogen content (atomic %) 180 ° bending test 90 ° after the war is immersed in HC1, less than 1 5 X is not implemented -—-— 2 ___^ The following X is not implemented in Comparative Example 3 13 below Δ X 4 SUS304 1.5 15 〇〇—1· 5 22 〇〇6 __32 〇〇 Suitable Example 7 41 〇〇8 59 〇〇 (Remarks) (1 Test piece size: width 15 mm x length 70 mm x thickness 1.8 mm Test pieces No. 1 and No. 2 were not subjected to processing spray treatment. (2) DLC film resistivity of 13 atomic % or less of hydrogen content: 108 to 1 〇 12 Ω · cm (3) DLC film resistivity of hydrogen atomic content of 15 at% or more 105 to 1 〇 8 Ω 098116359 25 201006607 • cm (4) Marking test results: singularity test: mark x: film peeling mark △: local film peeling mark 〇: no film peeling was found (Example 3) This example was applied to the surface of SK steel substrate by mirror surface The polisher, and the test piece having the roughened and processed layer subjected to the processing and spraying treatment of the present invention, are formed into a DLC film by various methods. Next, the 180° bending test and the salt spray test of the test piece were carried out, and the resistance and corrosion resistance of the DLC film to the bending deformation were investigated. (1) Test substrate and surface treatment The test substrate was set to SK steel (SK60 annealed material), and a test piece having a width of 15 mm x a length of 70 mm x a thickness of l_8 mm was produced from the substrate. Then, the test piece was subjected to buffing and processing spray treatment on the entire surface. The crude sugar content after various treatments is as follows: (A) The surface roughness of the polished surface is Ra: 0.02 to 0.08 rz · 0.66 to 0.81 (B) Surface roughness Ra of the processed sprayed surface: 〇.〇5~ 0.81 RZ : 0.72 to 0.88 (2) Method of forming DLC film The test piece of the formed DLC film was bent from the center to 18 〇 0 (u 098116359 26 201006607 curved shape), and the DLC of the bent portion was observed with a 20-times magnifying glass. Appearance. Further, the observed test piece was left in the original state and exposed to a salt spray test prescribed in JIS Z2371 for 96 hr, and the change of the DLC film was examined. (4) Test results • A brief summary of the test results shown in Table 4. From the results of the test, it was found that the surface of the test piece was subjected to buffing and the formation of a DLC film thereon (No. 1, 3, 5, 7) was confirmed to have cracking or slight dlC film peeling. However, the DLC film formed by the plasma CVD method of No. 7 was rarely cracked, and the adhesion to the substrate was good. On the other hand, according to the results of the salt spray test carried out after the bending test, it was observed that all of the test pieces in which the cracks or peeling of the DLC film were found to have red rust, the cracks reached the substrate, and the corrosion prevention disappeared. On the other hand, even if the test piece was maintained in a healthy state by the bending test, no red rust occurred even in the salt spray test, and excellent corrosion resistance was exhibited. From this result, it was confirmed that the DLC film of the present invention is not limited to the plasma CVD method, and can be applied to other conventional DLC film forming methods. 098116359 27 201006607 [Table 4]

No. DLC film formation method Substrate substrate surface treatment test results Remarks 90° bending test salt spray test 1 Ionization vapor deposition polishing XX Β 2 Processing spray treatment 〇〇A 3 Arc ion plating polishing Grinding XXB 4 Processing spray treatment 〇〇A 5 Plasma excitation polishing XX Β 6 Processing spray treatment 〇〇A 7 Plasma CVD polishing △ X Β 8 Processing spray treatment 〇〇A (Remarks) (1 Test piece size: width 15mmx length 70mmx thickness 1.8mm (2) roughness of substrate surface (A) polishing (No.l, 3, 5, 7) Ra : 0.02~0.08μιη

Rz : 0.66~0.81μιη (Β) Processing spray treatment (Νο.2, 4, 6, 8) Ra: 0.05~0.81μιη

Rz : 0.72 to 0.88 μιη (3) Evaluation mark of the test result (Α) 180° bending test mark X: Crack or minute peeling mark of the film △: Micro crack marks appear in the film 〇: The above case was not observed on the film ( Β) Salt spray test mark X: Red rust mark occurred 〇: Red rust was not found 098116359 28 201006607 (4) Mark A in the remark column: Suitable case B: Comparative example (5) Processing spray treatment conditions: Compressed air pressure 0.40 MPa, ground particle Al2〇3, particle size range 2〇~6〇^m (Example 4) In this example, stainless steel (SUS304) was used as a substrate, respectively, in the processing of the spray-treated surface and the mirror-polished surface. After the DLC film was formed thereon, the adhesion strength of the DLC film was evaluated. (1) Test substrate and pretreatment The test substrate was subjected to a test piece having a width of 25 mm x a length of 30 mm and a thickness of 3 mm from a stainless steel, and then subjected to the following pretreatment. (A) Electrolytic grinding: Ra: 〇.〇!~〇〇14/mi, RZ: 0.11 〇.15 qing (Β) Processing blasting treatment: Ra: 〇05~〇75μιη, Rz: 0.11 〇.96jLtm The (2) DLC film formation method and the film thickness DLC film were formed by a plasma CVD method to form a DLC film having a film thickness of 2 μm for all the test pieces. (3) Test method The adhesion of the DLC film to the substrate was applied to a drawing test which was widely used in the adhesion test of the coating film. In other words, a linear cut is produced on a DLC film by using a diamond needle having a constant load, and the adhesion strength is determined by the presence or absence of the DLC film peeling occurring at this time. 098116359 29 201006607 (4) Test results The test results are summarized as shown in Table 5. From the results, it was found that the DLC film (N〇.1, 2) which was subjected to the processing and spraying treatment to form the roughened and processed layer of the present invention, although scraped by the diamond needle, would cause scratches and scratches, but the DLC film was peeled off. The situation will hardly happen. On the other hand, the DLC film (No. 3, 4) formed on the mirror-polished surface has a large peeling effect on the DLC film located around the scratch. From these results, it was confirmed that the surface roughening treatment by the processing spray treatment has an effect of improving the adhesion of the DLC film. In addition, FIG. 5 shows the appearance of the DLC film after the adhesion test. [table 5]

No. Raw material pretreatment substrate crude sugar degree (μιη) DLC film appearance after scratch test Remark Ra Rz 1 SUS304 Processing spray treatment 0.050 0.11 Only damage caused by scratching Suitable example 2 0.750 0.96 Same as above 3 Electrolytic grinding 0.011 0.11 Scratch around DLC film peeling Comparative Example 4 0.014 0.15 Same as above (Remarks) (1) DLC film thickness 3/mi DLC film has a hydrogen content of 22 atom% and the balance is carbon. (2) Processing and spraying conditions: Compressed air pressure 0.28 MPa, ground particle SiC, particle size range 30 to 6 〇μηι (Example 5) This embodiment uses the SUS304 steel carrier body shown in Fig. 1 previously, and has a diameter of 200 mm and a thickness of 0.8 mm. The wafer was subjected to grinding to verify the results of the effects of the present invention. The following pretreatment was carried out on the entire surface of the carrier body, and a DLC film was formed in the form of 098116359 30 201006607. (1) Pretreatment of the present invention and DLC犋 The DLC is applied to the surface of the carrier body by processing spray treatment. (2) The pretreatment of the comparative example and the DLC film are polished and polished, and the carrier is too recognized. The surface of the body is trimmed to R 0.02~Ο.ΙΙμιη, Rz: 0.12~0.17丨·〇.Η — :()·82 ～0.94μιη* After the surface is formed, it is spread in the glaze. In DLc臈, hydrogen is contained, thick Yang 1 is stored, fresh/system is 14 atom%, and the rest is double.

Invented the homogenous DLC film 3/rni thick. After she mirrored, it formed on the threat and (3) test results.

The abrasive is the result of grinding using a water poly n Si wafer with colloidal silica dioxide as the abrasive material. 'When using the carrier forming the DLC film of the present invention, the surface of the Si wafer is trimmed to Ra0 0 Mm. Approximately 25 minutes: The carrier body coated with the comparative DLC film of the comparative example required 65 minutes. Further, no scratches were observed in the polished surface of the Si wafer on which the surface of the DLC film was finely formed and polished. (Embodiment 6) In this embodiment, the influence of the carrier conditions and the Si wafer polishing conditions shown in Fig. 1 on the Rsk value of the carrier body was investigated. The following pretreatment and DLC film were formed on the entire surface of the carrier body. (1) The pretreatment of the present invention and the DLC film properties are processed by a spray blasting process, and the surface of the carrier body is subjected to 粗· 098116359 31 201006607 0·08~Ο.ΙΙμιη, Rz: 0.83~〇.95μηι roughening, It was confirmed that the measured Rsk value was in the range of ±0.4 to 0.8. Then, the DLC film of the present invention was formed to have a thickness of 3 μm on the surface. (2) Pretreatment and DLC film properties of the comparative example The surface roughness Ra of the carrier body which was polished by polishing was Ra: 0.013 to 0.015 μm, Rz: 0.20 to 29.29 μm, and the Rsk value was in the range of + 1 or more. On the surface as in the present invention, the DLC film was formed to be 3 μm thick. (3) Test results The results of Si wafer polishing were carried out using a slurry abrasive containing colloidal emulsified material as an abrasive material. When the carrier body on which the DLC film of the present invention was formed was used, the surface of the Si wafer was trimmed to Ra0 01j. [un takes about 23 minutes, and the parallelism of the polished surface is within the range of the management value, and the polishing is performed with excellent precision. In contrast, when the carrier body on which the comparative example DLC film was formed was used, the parallelism of the polished surface was lowered except that the time required to obtain a predetermined polished surface was 3 minutes, and it was found that a change occurred. (Embodiment 7) This embodiment is an experiment for qualitatively investigating the rigidity of the carrier body by roughening the surface of the processing spray-treated surface (1) The test substrate and the test piece are made of stainless steel (SUS304). ), these were cut into test pieces having a width of 30 mm x a length of 200 mm x a thickness of 1 mm. (2) Processing and spraying treatment on the test piece, 098116359 32 201006607 For the single side of the test piece, the following processing is applied, but the comparative test piece is made of electrolytically polished stainless steel (SUS304). By processing spray treatment, the surface of the substrate is roughened to a rough degree Ra. 〇·05~〇74Mm, Rz: 0.55~0·95μπι (Β) by electro-grinding, performing mirror polishing to Ra: 0.013μιη, Rz : 016μιη (3) Test method Various test pieces are tested as shown in Fig. 7. One end of the test piece is fixed, and a weight of 1000 g is placed on the other side of the test piece to measure the change range of the front end of the test piece depending on the hammer. . (4) Test results «The test results are summarized as shown in Table 6. From the results, it was found that the test pieces (No. 1 to 4) subjected to the roughening treatment by the processing and blasting treatment were less likely to be displaced than the mirror-finished comparative test pieces. Deformation. [Table 6]

No. Substrate pretreatment surface coarse chain degree (/mi) Displacement amplitude (mm) Remark Ra Rz 1 2 0.06 0.85 34.1 SUS304 Processing spray treatment 0.05 0.55 33.0 Suitable example 3 4 0.25 0,89 32.2 0.74 0.95 30.5 5, Electrolytic grinding 0.013 0.16 44.1 Comparative example (Remarks) (1) Surface roughness measurement is performed according to JIS B0601-, 01 (2) Processing spray treatment conditions: 098116359 33 201006607 Compressed air pressure 0.45MPa, grinding particle A1N, particle size Scope 3〇~55gm (Industrial Applicability) The DLC thinning technique of the present invention and the roughening of the metal shaft body, that is, the processing characteristics of the processing and the DLC film, are not limited to Si, Grinding of semiconductor wafers such as GAP can be applied to grinding techniques such as liquid crystal display glass, hard disk, and the like. - [Simplified illustration of the drawings] - Fig. 1 is a plan view of a metal carrier body for stone etching. Figure 2 is a schematic cross-sectional view showing the surface roughness of the metal carrier body processed and sprayed, and the DLC film formed thereon. (a) The case of forming a DLC film thinner than Rz' (b) The case of forming a thin film of Rz thicker than Rz. Fig. 3 is a view showing a processing surface sem for performing various pretreatments on the surface of the carrier body. Fig. 4 is a schematic view showing a skewness value (Rsk) of the surface roughness of the processing sprayed surface. Fig. 5 is a schematic view showing a plasma CVD apparatus for forming a DLC film on a polishing carrier body of a tantalum wafer. Fig. 6 is an enlarged photograph of the surface state of the DLC film after scratching the test portion. Fig. 7 is a schematic view showing a state in which a rigidity test is performed on SUS304 steel which has been subjected to processing and spraying. [Description of main component symbols] 098116359 34 201006607 1 Fixed hole of Dream wafer 2 Supply hole of abrasive material 3 Outer ring tooth - 4 Through hole 5 Carrier surface 21 forming DLC film Carrier body 22 Thick chain degree according to Ra Roughness 23' 25 by Rz convex portion 24' 62 DLC film 25 Roughness convex portion 41 which is not covered by DLC film and is represented by Rz Reaction container 42 Object to be processed (carrier body) 43 Conductor 44 High voltage pulse generating power 45 Plasma generating source 46 Overlap device 47a, 48b Valve 48 Ground wire »> 49 High voltage lead-in terminal % 61 Base material 63 DLC film containing SiO 2 particles 098116359 35 201006607

64 65 C Slurry abrasive containing colloidal cerium oxide Residual colloidal cerium oxide powder Carrier 098116359 36

Claims (1)

201006607 · VII. Application for patent Fan Gu·· 1. Fixing the object to be polished The surface of the metal carrier body is formed by forming a DLC thin layer with a roughened and processed layer. The w is roughened and the layer is covered with the processing layer. The upper ====abrasive-_, heart, spring, and the age of the micro-blown particles, and at least the residual of the house, and the rough surface of the micro-concave surface Layer, upper 3: coarse: patent =: item is:: 0 05~〇85_r:: The coarseness of the layer surface is adjusted according to the Ra value, and is adjusted according to the Rz value. Scope = the object to be polished in the second item of the patent range 上 Upper: The surface roughness of the wide layer is adjusted to a value in the range of 0.05 to 0.85/mi, depending on the layer in R. The phase is G.G9 to 1.9, the range In the case of the fixing of the object to be grounded in Items 1 to 4 of the carrier patent, the above-mentioned roughening and processing layer is in the range of ±1. 2. For example, in the scope of application for patents, to 4 Any of the items to be fixed for fixing = wherein 'the above DLC thin medium exceeds the above roughing. The rough roundness Rz of the processed layer, and has 20/imWT_#. 098116359 37 201006607 7. As claimed in the fifth item The carrier for fixing an object to be polished, wherein the DLC film has a roughness Rz of not more than the roughening and processing layer, and has a film thickness of 20 μm or less. 8. As claimed in claims 1 to 4 of the patent application scope A carrier for fixing an object to be polished, wherein the DLC film is a solid hydrocarbon film having a hydrogen content of 13 to 3 atom% and the balance being carbon. - 9 · Patent Application No. 5 The carrier for fixing an object to be polished, wherein the DLC film is contained by hydrogen The solid hydrocarbon film of the material of the third aspect of the invention, wherein the DLC film has a hydrogen content of The solid-state hydrocarbon film of 13 to 30 atom%, and the remainder is a slave. The carrier for fixing a workpiece according to the seventh aspect of the invention, wherein the DLC thinner system has a hydrogen content of 13 to 3 〇 〇 、 、 、 固 固 · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · It is composed of a metal or an alloy of more than ι selected from special shots such as slag alloy, alloy, stainless steel, sk steel, and SKH steel. In addition, the above-mentioned metal carrier system is composed of any one or more kinds of metal alloys selected from alloys, titanium alloys, non-recorded steels, sk steels, and SKH steels, etc. 098116359 38 201006607. The carrier for fixing an object to be polished according to the sixth aspect of the invention, wherein the metal carrier system is one or more selected from the group consisting of special steels such as aluminum alloy, titanium alloy, stainless steel, SK steel, and SKH steel. The composition of the alloy according to claim 7, wherein the metal carrier is made of a special steel such as aluminum alloy, titanium alloy, stainless steel, SK Φ steel or SKH steel. It is composed of one or more metals and alloys selected from the above. 16. The carrier for fixing an object to be polished according to the eighth aspect of the invention, wherein the metal carrier system is one or more selected from the group consisting of special steels such as aluminum alloy, titanium alloy, stainless steel, SK steel, and SKH steel. Made of metal and alloy. 17. The carrier for fixing an object to be polished according to the ninth aspect of the patent application, wherein the metal carrier system is selected from the group consisting of special steels such as aluminum alloy, titanium alloy, stainless steel, SK steel, and SKH steel. The above metal alloy is composed of. 18. The carrier for fixing an object to be polished according to claim 10, wherein the metal carrier system is selected from the group consisting of special alloys such as alloys, alloys, stainless steels, SK steels, and SKH steels. More than one type of metal alloy. 19. The carrier for fixing an object to be polished according to claim 11 of the invention, wherein the metal carrier system is selected from special steels such as aluminum alloy, titanium alloy, stainless steel, SK steel, and SKH steel in 098116359 39 201006607. Any one or more kinds of metals and alloys. 098116359 40