201005988 九、發明說明： 【發明所屬之技術領域】 . 本發明係關於一種發光二極體封裝結構，特別關於一 種具有高反射率、高耐熱的發光二極體封裝結構。 【先前技術】 為響應節約能源的目標，尋找出能夠取代習知發光效 率不佳的發光源業已成為發光技術的主流研究，以目前的201005988 IX. Description of the Invention: [Technical Field] The present invention relates to a light emitting diode package structure, and more particularly to a light emitting diode package structure having high reflectivity and high heat resistance. [Prior Art] In response to the goal of saving energy, it has become a mainstream research on illuminating technology that can replace the conventional illuminating efficiency.
A w 技術而言，最具潛力的替代發光源應屬發光二極體而當之 無愧。 不過，眾所周知地，就現有的發光二極體封裝結構而 言，以反射杯結構為例，其可由樹脂或陶瓷材料所構成， 其中，陶瓷材料之反射杯熱傳導效果較樹脂材料之反射杯 佳，然而，陶瓷材料（例如：氮化鋁）所製作成的發光二 極體封裝結構在長、寬、高的最小尺寸極限僅能達到約3.0 〇 毫米*2.0毫米*1.2毫米的規格，且只能形成具有直角型態 的封裝結構，無法符合小型化發光二極體封裝結構之需 求，且不利於光線的反射，故，對於需使用小型化發光二 極體封裝結構作為發光源之攜帶式顯示裝置，仍需採用由 -樹脂材（例如：聚對苯二酰對苯二胺，PPA)構成的反射 -杯。但，由於樹脂材料本身的财熱性不佳，舉例來說，聚 對苯二酰對苯二胺在攝氏140度的操作溫度下操作126小 時候，會發生明顯的黃化、劣化問題。 因此.，如何提供一種發光二極體封裝結構，其與習知 201005988 之樹脂材料反 作時間，實屬1::較’具有較高之反射率以及較長之操 田刖重要課題之一。 【發明内容】 有鍛於 ❹ 極體封，本發明之目的在於提供—種發光二 光線以増力,發^可有效地反射發光二極體晶片發射出的 光二極體封it:極體封裝結構的出光效率，同時可使發 或劣化的現象構可承受更長時間的操作而不發生黃;匕 為達上述 ::其二極體封裝結 極趙〜完全或局部覆蓋於靠近發t單 料’具有面:及複合材料層包含， ΠΓ’無機物料材料，於 弟一折射係數小於 第-折射係數，其中， 折射係數之差值至少係數，且第—折射係數與第二 為達上逑目的 士、 ’2。 裝結構，其包含一承載？明亦同時揭露-種發光二極體封 單元具有-底部與—側；=:發光二極體晶片。承載 晶片位於底部上且位:：各置：：，發光二極體 材料以及一無機介電材置二:内。承載：元包含-樹脂 數，無機介電材料換、J 材料異有—第一折射係 有-第二折射係數二中樹，材料内，I無機介電材料具 /、中，弟一折射係數小於第二折射係 201005988 數，且第一折射係數與第二折射係數之差值至少大於0.2。 而丄述的樹脂材料的材質可為石夕膠，且樹脂材料的折 射係數（第一折射係數）介於1.3至1.6之間。 無機介電材料則可選擇氮化硼、氧化鋁、氮化鋁、氧 化鈹、硫酸鋇、氧化鎂或氧化锆，且無機介電材料（第二 折射係數）則是介於1·7至2.3之間。 另，無機介電材料摻混於樹脂材料的重量百分比大於 10%，更明確地說，此重量百分比應介於10%至40%之 〇間。 而由樹脂材料與無機介電材料所構成的複合材料層 對於可見光或紫外光之反射率大於或等於85%。 承上所述，依據本發明之一種發光二極體封裝結構， 其利用無機介電材料摻混於樹脂材料内以提升複合材料 的反射率，藉以使位於承載單元上或位於承載單元之容置 空間内的發光二極體晶片所產生出的光線在經過有效的 ^ 反射後射出至封裝結構外，同時藉由此一複合材料較佳的 光反射及耐熱特性，使得光線熊量及晶片產生的熱量不至 於大量地累積或影響發光二極體封裝結構。因此，縱使對 於具有較強能量的紫外光發光二極體晶片而言，本發明所 -揭露的發光二極體封裝結構仍可藉複合材料的光反射特 性以降低光線能量的累積而導致之黃化、劣化等現象。 與習知技術相較，本發明可藉由材料改質以提升發光 二極體封裝結構對於光線的反射率，且由於無須改變現有 的製作方法即可實現上述的目的，因此，本發明除了可提 201005988 升發光二極體封裝結構的出光效率，更因其優異的反射及 耐熱特性，大幅延長了發光二極體封裝結構的使用壽命。 【實施方式】 以下將參照相關圖式，說明本發明較佳實施例之一種 發光二極體封裝結構。 首先，請同時參照圖1A、圖1B與圖1C所示，其中 圖1A為發光二極體封裝結構的立體圖，而圖1B則沿圖 ® 1A中截線L的發光二極體封裝結構截面圖，圖1C則為圖 1A的另一種態樣的立體圖。 首先，根據圖1A及圖1B中所示的發光二極體封裝結 構la可知，其包含有一承載單元12、一發光二極體晶片 14、一複合材料層16及一反射電極18。承載單元12與發 光二極體晶片14之間設置反射電極18,換言之，反射電 極18設置於承載單元12上，且發光二極體晶片14位於 ❹反射電極18上；在本實施例中，複合材料層16局部覆蓋 於靠近發光二極體晶片14之承載單元12的表面上。 其中，承載單元12包含一底部121與一側壁122，形 成容置空間11，在本實施例中，底部121係呈矩形，而發 -光二極體晶片14與反射電極18則是設置在底部121上且 .位於此容置空間11内。且，根據圖1A與圖1B所示可知， 於此的反射電極18是以未完全遮蔽承載單元12底部121 的態樣為例說明，不過實際上，反射電極18亦可為完全 遮蔽承載單元12底部121的型態（圖未顯示）。另外，於 201005988 此所述的底部121與側壁122雖各自為單獨結構者，然， ‘亦可為一體成型之結構者。 是以，由於在本實施例中局部的底部121表面並未被 反射電極18遮蔽，因此複合枒料層16除了可完全覆罢在 靠近發光二極體晶片14之承載單元12的側壁122==上 之外，更同時覆蓋在上述未被反射電極18遮蔽的底部i2i 表面上，如圖1A與圖1B所示。 而複合材料層16則包含一樹脂材料161以及一無機 介電材料162(如圖1B中放大的部分所示），樹脂材料”ΐ6ι 具有-第-折射係數；無機介電材料162換混於樹 ⑹内，並具有一第二折射係數，其中，第一折射:數 於第二折射係數，且第—折射係數與第二折射 至少大於0.2。 值 對於複合材料層16的形成位置來說，除了如圖ia 圖1B)所示之態樣外，複合材料層16 1 ❹ 近發光二極體晶…承載單元12的表面 了可完全覆蓋在靠近發光二極體晶片14之承載單元^ 侧壁122表面上之外，更同時覆蓋在上述反射電極μ與 未被反射電極18遮蔽的底部121表面上；或者，複合材 料層16更可局部地覆蓋於承載單元12的側壁122上，如 圖1C所示的發光二極體封裝結構&，當然，此時的複合 材料層16亦覆蓋於局部的底部121表面上。值得注音二 二所示的發光二極體封I结構1a，的底㈣ 與側土 122所構成的容置"u亦為長方體，為了減少 10 201005988 複合材料層16之用量，作奶 — 的效率，複人㈣馬 持一疋之均熱與光線反射 二丄二==地覆蓋於較靠近於發光 於具有刪度崎覆蓋 材料層16是以局部覆蓋於承載單元η 側壁122)的態樣，或是完全覆罢於二底糊與 ❹ 最主要的特徵在於複合材料層C必須至 發光二極體晶片U之承載單元表罪近 之形狀不限於上述之矩开的：面4’底部121 為橢圓形，此時，：=二亦可為其他形狀，例如可 近於發光二極體晶=116可選擇性地覆蓋於較靠 4的侧j上，也就是複人 至少覆蓋於靠近«形短軸附近的側壁表面上科層16 且’上述的複合封料層16的厚度大於或等於 (ππη)，不過在實際的 、_1毛未 依據不同產品的設計而變化，例：:=二的厚度可 此為均勻厚度者或是有厚度變化者。 ，16更可 @二㈣來說’上述承載單元12之底部⑵Μ電路 ，，例如由環氧樹脂(ΕΡΟΧΥ)構成，而承 為Ζ 側壁122可選擇石夕聲、聚對苯二醜對苯二 之 J丙烯酸甲酯（ΡΜΜΑ)、環氧樹脂（Ερ 、聚甲 苯二甲酸酯（PET)、聚碳酸樹脂（ρ 1取 、/乙烯對 12 4：：^™ 即，其底部121與側壁122為相同材暂樽者，·亦 苯二酰對苯二胺（PPA)、，例如石夕膠、聚對 基兩烯酸曱酯（mMA)、 11 201005988 環氧樹脂（EPOXY)、聚乙烯對苯二甲酸酯（PET)、聚碳 酸樹脂（PC)或是聚四氟乙烯（PTFE)。 而上述的複合材料層16中的樹脂材料161為石夕膠， 且其所對應的第一折射係數介於1.3至1.6之間，而複合 * . 材料層16中的無機介電材料162則可根據不同產品的設 計與需求，以選擇氮化硼、氧化鋁、氮化鋁、氧化鈹、硫 酸鋇、氧化鎂、氧化锆及其組合所組成之群組，且上述的 材料所對應的第二折射係數則是介於1.7至2.3之間。另， ❹ 上述無機介電材料162換混於樹脂材料161的重里百分比 大於10%，較佳的是，此重量百分比介於10%至40%之 間，藉以使所形成的複合材料層16在可見光或紫外光的 環境下，可達到大於或等於85%的反射率。 據此，由於圖1B的實施例中的發光二極體晶片14位 於承載單元12上的反射電極18上，且複合材料層16覆 蓋相鄰於反射電極18的該承載單元12的表面。因此，當 ^ 發光二極體晶片14通入電流並產生光線後，部分的光線 ❿ 會直接射出至發光二極體封裝結構la外，如圖1B中的實 線箭頭所示，而部分的光線則會藉由複合材料層16的高 反射特性以反射至發光二極體封裝結構la之外，如圖1B -中的虛線箭頭所示。是以，本發明所揭露的發光二極體封 裝結構la所提供的亮度將會因為反射的光線量增加而提 升，且，因複合材料層16為摻混無機介電材料162之樹 脂材料161，具有較佳之導熱特性而可達均熱效果，使原 集中於發光二極體晶月14附近的熱能夠藉由複合材料層 12 201005988 16與反射電極18之配合設置而均勻分散。同理，雖然圖 1C中所揭露的複合材料層16僅局部覆蓋於靠近於發光二 . 極體晶片14之承載單元12的表面上，不過藉由此種複合 . 材料層16的配置仍可使發光二極體封裝結構la’達成與上 述近似的效果，故於此將不再贅述。 另外，雖圖1A至圖1C中所示的實施例均以複合材料 層16覆蓋於反射杯的態樣為例說明，但圖中所示的反射 杯結構並不用以限定本發明之範圍。 Ο 再，請參照圖2所示，其為本發明所揭露的發光二極 體封裝結構的另一實施例。在此發光二極體封裝結構lb 中亦包含有一承載單元12、一發光二極體晶片14以及一 複合材料層16。承載單元12包含一底部121與一側壁 122,並藉以形成一容置空間11，而發光二極體晶片14位 於承載單元12的底部121上且位於容置空間11内。 其中，承載單元12中的底部121與側壁122雖以獨 φ 立結構者為例，然，底部121與侧壁122亦可為一體成型 者，換言之，承載單元12中的底部121與侧壁122可藉 由各種加工方法以構成一體成型之結構。 且，為搭配本實施例中的承載單元12結構，於此所 -揭露的複合材料層16的設置位置完全覆蓋於側壁122的 -表面，但不限於此，複合材料層16亦可局部或完全覆蓋 於靠近發光二極體晶片14的側壁122與底部121的表面， 或僅局部覆蓋於靠近發光二極體晶片14的側壁122的表 面。惟，就複合材料層16的構成來說，其仍包含有一樹 13 201005988 脂材料161以及一無機介電材料162 (如圖中放大的部分 所示），且無機介電材料162摻混於樹脂材料161内；其 中，樹脂材料161具有一第一折射係數，無機介電材料162 則具有一第二折射係數，且，第一折射係數與第二折射係 數的關係仍符合第一折射係數小於第二折射係數，且第一 折射係數與第二折射係數之差值至少大於0.2的關係。 另，複合材料層16的厚度仍符合於大於或等於0.1毫米的 範圍。 以材料來說，承載單元12、複合材料層16中的樹脂 材料161以及複合材料層16中的無機介電材料162可選 用如圖1B中所載的材料，於此不再贅述。而承載單元12 中的底部121可為電路板、導線架…等結構。另，側壁122 所選用的材質則與承載單元12相似，換言之，也就是包 括有矽膠、聚對苯二酰對苯二胺、聚甲基丙烯酸曱酯、環 氧樹脂、聚乙烯對苯二甲酸酯、聚碳酸樹脂、聚四氟乙烯。 據此，雖本實施例中的發光二極體晶片14位於承載 單元12的容置空間11内，不過由於複合材料層16仍至 少形成於靠近發光二極體晶片14之承載單元12的表面 (也就是複合材料層16可環繞著發光二極體晶片14周邊 以形成，亦可選擇性地形成在承載單元12的局部表面 上），因此，與圖1B所示的實施例相似，當發光二極體晶 片14通入電流並產生光線後，部分的光線會直接射出至 發光二極體封裝結構lb外，如圖2中的實線箭頭所示， 而部分的光線則會藉由複合材料層16的高反射特性以反 14 201005988 射至务光―極體封裝結構lb之外，如圖2 t的盧線箭頭 戶f不。是卩’本發明所揭露的發光二極體封裝結構lb所 提供的亮度可藉由反射光線量的增加而提升。 本發明的發光二極體封裝結構除上述圖1β與圖2 示的實施例之外，於圖3中則揭露本發明之另:種 ，。於此實施例的發光二極體封裝結構lc中包含有—承遨 單元12,以及一發光二極體晶片14〇承 且7 ❹ 鲁 部⑵與一侧壁122，，發光二極體晶片14位於 ::底部m上1中，承載單元12，之側壁122，=: 162由包含有1脂材料161以及-無機介電材料 ^如圖中放大的部分所示），樹脂材料⑹具有—第一 ^糸數，热機介電材料162摻混於樹 热機介電材料162具有— 且 係數小於第二折射係數，：;折::數’其中，第-折射 之差值至少大於0.2。 射係數與第二折射係數 就承载單元12’的沾接丄 與侧壁122,雖是以〜==圖3所揭露的底部121 者，換言之，承載單^不過亦可為一體成型 ^ A ^ , r 中勺底4 121與側壁122’可藉 各種加工方法構戍—體成型之結構。 而元12’的底部121可為電路板， 混於樹_ 161内::2二:有樹脂材料161及摻 材：得注意的是，，二:=:機介電 材料162的選取則與上述圖1Β、圖2所揭露的實= 15 201005988 同，換§之，樹脂材料161為矽膠，且其所對應的第一折 射係數/丨於1 ·3至1.6之間，而無機介電材料162則可選 擇氮化硼、氧化、氮切、氣化鈹、硫酸鋇、氧化鎮、In terms of A w technology, the most promising alternative source of illumination should be a light-emitting diode and well deserved. However, as is well known, in the case of the existing LED package structure, the reflector cup structure is taken as an example, which may be composed of a resin or a ceramic material, wherein the reflective cup of the ceramic material has better heat conduction effect than the reflective cup of the resin material. However, the light-emitting diode package made of ceramic material (for example, aluminum nitride) can only achieve a specification of about 3.0 mm * 2.0 mm * 1.2 mm in terms of length, width and height. Forming a package structure having a right-angled shape cannot meet the requirements of a miniaturized light-emitting diode package structure, and is not conducive to light reflection. Therefore, a portable display device that uses a miniaturized light-emitting diode package structure as a light-emitting source is required. It is still necessary to use a reflection-cup composed of a resin material (for example, poly(p-phenylene terephthalamide, PPA). However, due to the poor thermal conductivity of the resin material itself, for example, when poly(p-phenylene terephthalamide) is operated at an operating temperature of 140 ° C for 126 hours, significant yellowing and deterioration problems occur. Therefore, how to provide a light-emitting diode package structure, which has a reaction time with the resin material of the prior art 201005988, is one of the important topics of higher reflectivity and longer operation. SUMMARY OF THE INVENTION The present invention aims to provide a light-emitting diode that can effectively reflect light-emitting diodes emitted from a light-emitting diode chip: a polar body package structure. The light-emitting efficiency, at the same time, can make the phenomenon of hair growth or deterioration can withstand longer operation without yellowing; the above is the above:: its diode package junction pole Zhao ~ completely or partially covered near the t-stock 'Having a surface: and the composite material layer, ΠΓ' inorganic material material, the refractive index of Yudi is less than the first-refractive coefficient, wherein the difference of the refractive index is at least a coefficient, and the first-refractive index and the second are for the purpose of Shi, '2. Mounting structure, which contains a load? It is also disclosed that the light-emitting diode sealing unit has a bottom and a side; =: a light-emitting diode wafer. The carrier wafer is located on the bottom and is positioned:: each::, the light-emitting diode material and an inorganic dielectric material are placed in two: inside. Bearing: element contains - resin number, inorganic dielectric material exchange, J material exclusive - first refractive system has - second refractive index two medium tree, material, I inorganic dielectric material with /, medium, young one refraction The coefficient is less than the number of the second refractive system 201005988, and the difference between the first refractive index and the second refractive index is at least greater than 0.2. The material of the resin material described above may be Shishijiao, and the refractive index (first refractive index) of the resin material is between 1.3 and 1.6. The inorganic dielectric material may be selected from boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, barium sulfate, magnesium oxide or zirconium oxide, and the inorganic dielectric material (second refractive index) is between 1. 7 and 2.3. between. Further, the inorganic dielectric material is incorporated in the resin material in an amount of more than 10% by weight, and more specifically, the weight percentage should be between 10% and 40%. The composite material layer composed of the resin material and the inorganic dielectric material has a reflectance of visible light or ultraviolet light of greater than or equal to 85%. According to the present invention, a light emitting diode package structure according to the present invention is incorporated into a resin material by an inorganic dielectric material to enhance the reflectivity of the composite material, thereby accommodating the carrier unit or the carrier unit. The light generated by the light-emitting diode chip in the space is emitted to the outside of the package structure after being effectively reflected, and the light bear and the wafer are generated by the light reflection and heat resistance characteristics of the composite material. The heat does not accumulate or affect the LED package structure in a large amount. Therefore, even for an ultraviolet light emitting diode chip having a strong energy, the light emitting diode package structure disclosed in the present invention can still be yellow by the light reflection property of the composite material to reduce the accumulation of light energy. Degradation, deterioration and other phenomena. Compared with the prior art, the present invention can improve the reflectivity of the light-emitting diode package structure to light by modifying the material, and the above object can be achieved without changing the existing manufacturing method. Therefore, the present invention can be implemented. The light-emitting efficiency of the 201005988 liter LED package structure is greatly extended by the excellent reflection and heat resistance characteristics of the LED package structure. [Embodiment] Hereinafter, a light emitting diode package structure according to a preferred embodiment of the present invention will be described with reference to the related drawings. First, please refer to FIG. 1A, FIG. 1B and FIG. 1C simultaneously, wherein FIG. 1A is a perspective view of the LED package structure, and FIG. 1B is a cross-sectional view of the LED package structure along the line L of FIG. 1A. FIG. 1C is a perspective view of another aspect of FIG. 1A. First, the light-emitting diode package structure 1a shown in FIG. 1A and FIG. 1B includes a carrier unit 12, a light-emitting diode chip 14, a composite material layer 16, and a reflective electrode 18. A reflective electrode 18 is disposed between the carrying unit 12 and the LED wafer 14, in other words, the reflective electrode 18 is disposed on the carrying unit 12, and the LED array 14 is disposed on the reflective electrode 18; in this embodiment, the composite The material layer 16 is partially covered on the surface of the carrier unit 12 adjacent to the LED substrate 14. The carrying unit 12 includes a bottom portion 121 and a side wall 122 to form an accommodating space 11. In the embodiment, the bottom portion 121 has a rectangular shape, and the light-emitting diode wafer 14 and the reflective electrode 18 are disposed at the bottom portion 121. The upper and lower are located in the accommodating space 11. As shown in FIG. 1A and FIG. 1B , the reflective electrode 18 is exemplified as an example in which the bottom portion 121 of the carrying unit 12 is not completely shielded. However, the reflective electrode 18 may also be a fully shielded carrying unit 12 . The shape of the bottom 121 (not shown). In addition, the bottom portion 121 and the side wall 122 described in 201005988 are each a separate structure, and ‘may also be an integrally formed structure. Therefore, since the surface of the bottom portion 121 is not shielded by the reflective electrode 18 in this embodiment, the composite layer 16 can be completely covered on the side wall 122 of the carrier unit 12 adjacent to the LED wafer 14 == In addition to the above, it is covered on the surface of the bottom portion i2i which is not shielded by the reflective electrode 18 as shown above, as shown in Figs. 1A and 1B. The composite material layer 16 comprises a resin material 161 and an inorganic dielectric material 162 (as shown in the enlarged portion of FIG. 1B), the resin material "ΐ6ι has a -first-refractive index; and the inorganic dielectric material 162 is mixed with the tree. (6) and having a second refractive index, wherein the first refraction is: the second refraction coefficient, and the first refraction coefficient and the second refraction are at least greater than 0.2. The value is for the formation position of the composite layer 16, except In addition to the aspect shown in FIG. 1B), the surface of the composite material layer 16 1 ❹ near-light-emitting diode substrate 12 can completely cover the sidewalls 122 of the carrier unit 14 adjacent to the LED wafer 14 . In addition to the surface, the surface of the bottom portion 121 that is not shielded by the reflective electrode 18 is covered at the same time; or the composite material layer 16 is partially covered on the side wall 122 of the carrying unit 12, as shown in FIG. 1C. The illustrated light-emitting diode package structure & of course, the composite material layer 16 at this time also covers the surface of the partial bottom portion 121. It is worthy of the bottom (four) of the light-emitting diode package I structure 1a shown in the note two Side soil 122 The accommodating "u is also a cuboid, in order to reduce the amount of 10 201005988 composite layer 16 , for milk - efficiency, Fu Ren (4) horse holding a uniform heat and light reflection two 丄 = = land cover is closer to The light-emitting layer having the layer of the gradual covering material 16 is partially covered on the side wall 122 of the supporting unit η, or completely covered with the paste and the ruthenium. The most important feature is that the composite layer C must be to the light-emitting diode. The shape of the load cell of the body wafer U is not limited to the above-mentioned shape: the bottom portion 121 of the face 4' is elliptical. In this case, the shape of the film can be other shapes, for example, close to the light-emitting diode crystal = 116 may selectively cover the side j of the side 4, that is, the compound covers at least the surface layer 16 adjacent to the side wall of the short axis and the thickness of the composite sealing layer 16 is greater than or equal to ( Ππη), but in actual, _1 hair does not change according to the design of different products, for example:: = thickness of two can be uniform thickness or thickness change. 16 can be @二(四) for the above The bottom (2) of the carrying unit 12, for example, Epoxy resin (ΕΡΟΧΥ) is formed, and the side wall 122 can be selected from Shi Xisheng, poly(p-phenylene terephthalate), benzoic acid (methyl acrylate), epoxy resin (Ερ, polymethyl phthalate ( PET), polycarbonate resin (ρ 1 taken, / ethylene pair 12 4:: ^ TM ie, the bottom 121 and the side wall 122 are the same material, · phthalyl p-phenylenediamine (PPA), for example Shixi gum, poly(p-vinyl phthalate) (mMA), 11 201005988 epoxy resin (EPOXY), polyethylene terephthalate (PET), polycarbonate (PC) or polytetrafluoroethylene ( PTFE). The resin material 161 in the composite material layer 16 is a diarrhea rubber, and the corresponding first refractive index is between 1.3 and 1.6, and the composite dielectric material 162 in the material layer 16 can be According to the design and requirements of different products, a group consisting of boron nitride, aluminum oxide, aluminum nitride, cerium oxide, barium sulfate, magnesium oxide, zirconium oxide and the like is selected, and the above materials correspond to the second The refractive index is between 1.7 and 2.3. In addition, the above inorganic inorganic material 162 is mixed with the resin material 161 by more than 10% by weight, and preferably, the weight percentage is between 10% and 40%, so that the formed composite layer 16 is In the visible or ultraviolet light environment, a reflectance greater than or equal to 85% can be achieved. Accordingly, the light-emitting diode wafer 14 in the embodiment of Fig. 1B is located on the reflective electrode 18 on the carrier unit 12, and the composite material layer 16 covers the surface of the carrier unit 12 adjacent to the reflective electrode 18. Therefore, when the light-emitting diode wafer 14 is supplied with current and generates light, part of the light ray is directly emitted outside the light-emitting diode package structure la, as indicated by the solid arrow in FIG. 1B, and part of the light is It is reflected by the high reflection property of the composite material layer 16 to the outside of the light emitting diode package structure la, as indicated by the dashed arrow in FIG. 1B. Therefore, the brightness provided by the light emitting diode package structure 1a of the present invention is increased by the amount of reflected light, and since the composite material layer 16 is a resin material 161 mixed with the inorganic dielectric material 162, The heat conduction property is better to achieve the soaking effect, so that the heat concentrated in the vicinity of the light-emitting diode crystal 14 can be uniformly dispersed by the cooperation of the composite material layer 12 201005988 16 and the reflective electrode 18. Similarly, although the composite layer 16 disclosed in FIG. 1C is only partially covered on the surface of the carrier unit 12 adjacent to the polar body wafer 14, the configuration of the composite material layer 16 can still be used. The light-emitting diode package structure la' achieves the effect similar to the above, and thus will not be described again. In addition, although the embodiment shown in Figs. 1A to 1C is exemplified by the aspect in which the composite material layer 16 is covered on the reflective cup, the reflective cup structure shown in the drawings is not intended to limit the scope of the present invention. Further, please refer to FIG. 2, which is another embodiment of the light emitting diode package structure disclosed in the present invention. A carrier unit 12, a light-emitting diode wafer 14 and a composite material layer 16 are also included in the LED package structure lb. The carrying unit 12 includes a bottom portion 121 and a side wall 122 to form an accommodating space 11 , and the LED chip 14 is located on the bottom portion 121 of the carrying unit 12 and located in the accommodating space 11 . For example, the bottom portion 121 and the side wall 122 of the carrying unit 12 are exemplified by a single structure. However, the bottom portion 121 and the side wall 122 may also be integrally formed. In other words, the bottom portion 121 and the side wall 122 of the carrying unit 12 are formed. The structure can be formed by various processing methods. Moreover, in order to match the structure of the carrying unit 12 in this embodiment, the position of the composite material layer 16 disclosed herein completely covers the surface of the sidewall 122, but is not limited thereto, and the composite material layer 16 may also be partially or completely The surface of the sidewalls 122 and the bottom portion 121 of the light-emitting diode wafer 14 is covered, or only partially covers the surface of the sidewall 122 of the light-emitting diode wafer 14. However, in terms of the composition of the composite material layer 16, it still contains a tree 13 201005988 grease material 161 and an inorganic dielectric material 162 (shown in enlarged portions in the figure), and the inorganic dielectric material 162 is blended with the resin. The material 161 has a first refractive index, the inorganic dielectric material 162 has a second refractive index, and the relationship between the first refractive index and the second refractive index still conforms to the first refractive index is smaller than the first refractive index. a refractive index, and the difference between the first refractive index and the second refractive index is at least greater than 0.2. In addition, the thickness of the composite layer 16 still conforms to a range of greater than or equal to 0.1 mm. In terms of materials, the carrier unit 12, the resin material 161 in the composite material layer 16, and the inorganic dielectric material 162 in the composite material layer 16 may be selected from the materials as shown in FIG. 1B, and details are not described herein again. The bottom portion 121 of the carrying unit 12 can be a circuit board, a lead frame, or the like. In addition, the material selected for the side wall 122 is similar to that of the carrying unit 12, in other words, including silicone, poly(p-phenylene terephthalamide, poly(meth) methacrylate, epoxy resin, polyethylene terephthalic acid. Acid ester, polycarbonate resin, polytetrafluoroethylene. Accordingly, although the LED array 14 in the present embodiment is located in the accommodating space 11 of the carrier unit 12, the composite material layer 16 is still formed at least on the surface of the carrier unit 12 adjacent to the LED substrate 14 ( That is, the composite material layer 16 may be formed around the periphery of the light-emitting diode wafer 14 or may be selectively formed on a partial surface of the carrier unit 12), and thus, similar to the embodiment shown in FIG. 1B, when the light-emitting diode is After the polar body wafer 14 is energized and generates light, part of the light is directly emitted outside the light emitting diode package structure lb, as indicated by the solid arrow in FIG. 2, and part of the light is passed through the composite material layer. The high reflection characteristic of 16 is in the opposite direction to the light-polar package structure lb, as shown in Fig. 2 t. The brightness provided by the light emitting diode package structure 1b disclosed in the present invention can be improved by an increase in the amount of reflected light. The light-emitting diode package structure of the present invention is in addition to the above-described embodiment of Fig. 1 and Fig. 2, and another type of the invention is disclosed in Fig. 3. The LED package structure lc of this embodiment includes a susceptor unit 12, and a illuminating diode chip 14 and a side wall 122. The illuminating diode chip 14 Located at: bottom 1 on the upper side, the load bearing unit 12, the side wall 122, =: 162 is composed of a 1-fat material 161 and an inorganic dielectric material ^ as shown in the enlarged portion of the figure), and the resin material (6) has - The heat-transmissive dielectric material 162 is blended with the tree heat-transfer dielectric material 162 having a coefficient that is less than the second index of refraction, and: the fold:: number, wherein the difference in the first-refraction is at least greater than 0.2. The adhesion coefficient and the second refractive index are the adhesion 丄 and the side wall 122 of the carrying unit 12', although the bottom 121 is exposed by 〜== Fig. 3, in other words, the bearing unit can be integrally formed. , the bottom of the spoon 4 121 and the side wall 122' can be configured by various processing methods. The bottom 121 of the element 12' can be a circuit board, mixed in the tree _ 161:: 2 2: there is a resin material 161 and the material is mixed: it is noted that, two: =: the selection of the dielectric material 162 is The above-mentioned FIG. 1 and FIG. 2 disclose the actual = 15 201005988. In other words, the resin material 161 is a silicone rubber, and the corresponding first refractive index / 丨 is between 1.3 and 1.6, and the inorganic dielectric material 162 can choose boron nitride, oxidation, nitrogen cutting, gasification hydrazine, barium sulfate, oxidation town,
氧化錄及其組合所版成之群組以為材料，且上述的材料所 對應的第二折射係數則是介於L7至2.3之間。另，上述 無機介電材料162摻混於樹脂材料161的重量百分比大於 10% ’更精確來說’此重量百分比應介於10%至4〇%之 間，藉以使由樹脂㈣⑹與無機介電材料162所構成的 側壁122’在可見光或紫外光的壤境下，可達到大於或等於 85%的反射率，或者若承載單元12’中的底部121與側 壁122為—體成型之結構，此時承載單元12,在可見光或 紫外光的環境下的反射率可達到大於或等於 85%。 口此由於本貫施例中的發光二極體晶片14位於承 載單元12的底部121上，且承載單元12’的側壁122,包 含有樹脂材料161與無機介電材料162。因此，當發光二 極體晶片14通入電流並產生光線後，部分的光線會直接 射出至發光二極體封裝結構lc外，如圖3中的實線箭頭所 示，而部分的光線則會藉由樹脂材料161與無機介電材料 162的高反射特性以反射至發光二極體封裝結構lc之外， 如圖3中的虛線箭頭所示。是以，與圖1B、圖2所揭露的 實施例相似，本實施例藉由包含有樹脂材料161與無機介 %材料162的承載單元12’，以有效地反射來自發光二極 體晶片14的光線’俾使整體發光二極體封裝結構u所提 供的亮度增加。 16 201005988 另外，在如圖4中所揭露的實施例中，此〆發光二二 體封裝結構Id包含有一承一光二極體晶片 …至少-反射電一=二層16。發光二， 體晶片14位於承載單元12上；反射電極18貝】J是位於發 光二極體晶片14與承载單元12之間，而複合材料層16 :局部或完全覆蓋承載單元12相鄰於反射電極18之承載 ^ 12/表面上’更詳細來說，以俯視的角度觀之（圖 未-貝不），覆蓋在承載單 18表面上 ❹ Ο 未顯示），覆蓋在承載單說’，讀 ^; ! 8 體晶片 的複合材料層16是二12 4目鄰於反射電* 疋乂元全或届邱j罗母於發光二極 當然，於此所述沾…人 或等於(U毫米的要、：是“_ 16的厚度仍符合大於 材料層16包含有一 1且相同於前述的實施例，此複合 (如圖中放大的部分^^料161以及一無機介電材料162 樹脂材料161內.执）’且無機介電材料162摻混於 機介電材料162則2材料161具有一第一折射係數；無 數與第二折射係數之^第二折射係數’且，第-折射係 射趣與第二射_之差值至少大於 其中，承载單元 揭露的樹脂材料丨 可為電路板。且，就本實施例所 161為矽膠，且其^與無機介電材料162來說，樹脂材料 間，而無機介電=\應的第—折射係數介於1·3至1.6之 鋁、氧化鈹、碌/ Q則可選擇氮化硼、氧化鋁、氮化 L义鋇、氣化鎂、氧化錄及其組合所組成之 17 201005988 群組以為材料，且上述的材料所對應 介於1.7至2.3之間。 '、弟二折射係數則是 — 據此可知，由於本實施例中的發亦_ 於承載單元12上，且複合材料層^ 一極體晶月14位 載單元12相鄰於反射電極18的表面^ °卩或完全覆蓋於承 藉由複合材料層16與反射電極18Χ之配丄是以，本實施例 地反射來自發光二極體晶片14的光^合運用，可以有效 俾使發光二極體晶片14產生的光線可= 能達均熱效果， 料層16與反射電極18以進行反 效地藉由複合材 裝結構Id的出光效率提升，且使整體發光二極體封 晶片14附近的熱能夠藉由複合=中:發光二極體 之設置而均勻分散。 q 16與反射電極18 而無論對於上述圖1A、圖 圖4中所示的發光二極體㈣結構=二圖、圖3或 來說，其中的發光二極體a lb、lc、ld ❹ 晶片或紫外光發光二極體=。14 =可見光發光二極體 極體晶片或紫外光發光二:體晶用可!:光發光二 均能夠提高發光 “日 "之複合材料層 發光二極體封裝結構 結構一 承載單元上覆蓋複合材:Γ °但，須注意的是，對於 言，若覆蓋於承载單元發光二極體封裝結構而 為氮化石朋、氧化銘或?复5材料層中的無機介電材料 晶片或紫外光發光i 則適用於可見光發光二極體 之複合材料層中之益搂片，但，若覆蓋於承載單元上 …、扶乃电材料為氧化键、硫酸鋇、氧化 18 201005988 鎂或氧化锆，則僅適用於紫外光發光二極體晶片。另外， 對於承載單元内包含摻混之樹脂材料以及無機介電材料 . 的發光二極體封裝結構而言，若樹脂材料為矽膠，則適用 _ 於可見光發光二極體晶片或紫外光發光二極體晶片，但若 樹脂材料為聚對苯二酰對苯二胺、聚曱基丙烯酸甲酯、環 氧樹脂、聚乙烯對苯二甲酸酯或聚碳酸樹脂，則僅適用於 可見光發光二極體晶片；而無機介電材料之選擇同上述， 即，若承載單元中之無機介電材料為氮化硼、氧化鋁或氮 ^ 化鋁，則適用於可見光發光二極體晶片或紫外光發光二極 體晶片，但，若承載單元中之無機介電材料為氧化鈹、硫 酸鋇、氧化鎂或氧化锆，則僅適用於紫外光發光二極體晶 片。 以圖3所示的發光二極體封裝結構lc為例，由於其中 的承載單元12’是由複合材料層16 (包含有樹脂材料161 與無機介電材料162)所構成，因此所製作成的發光二極 β 體封裝結構lc在長、寬、高的尺寸能縮小至2.6毫米*1.6 毫米*1.0毫米或更小規格（製作的方式可為射出成型）， 符合小型化之規格，同時更可形成具有斜角型態的封裝結 構。 - 特別的是，對於紫外光發光二極體晶片來說，因複合 ，-材料層16之樹脂材料161為石夕膠，而無機介電材料162 為氮化硼、氧化銘、氮化铭、氧化鈹、硫酸鋇、氧化鎮或 氧化鍅，使複合材料層16對介於波長範圍300奈米至430 奈米間之紫外光的反射率極佳（至少大於85%)，舉例來 19 201005988 說，以矽膠摻混氮化硼所構成的複合材料層（silicone/BN) 來說，在波長為365奈米、光源強度為200mw/cm2的紫外 光線照射下，其反射率可保持在91%左右’且在48小時 的操作時間下’ silicone/BN的複合材料層的反射率僅衰退 約2%左右。然，習知之純陶瓷材料對於紫外光的反射率 低於80%，故本發明具有複合材料層之發光二極體封裝結 構對於紫外光的反射率較習知由純陶瓷材料所構成的發 光二極體封裝結構佳。 ® 另外’如圖2所示的發光二極體封裝結構lb，其因為 在侧壁122的表面上覆蓋有複合材料層16’因此相較於一 般習知的發光二極體封裝結構來說，此發光二極體封裝結 構lb更適用於封裝紫外光發光二極體晶片。 另外’於上述圖1A、圖1B、圖1C、圖2、圖3及圖 4中所不的發光二極體封裝結構la、la，、lb、lc、ld中均 揭露有封裝膠體13的結構。而如同習知的封裝膠體，於 ❹此所揭露的封裝膠體13内可含有螢光物質（圖未顯 以使發异; 5 〜掩體晶片14產生出的光線可透過封裝勝科 内的螢弁队& ，體13 尤物貝的吸收與轉換而以特定波長範圍的 出於私杏- 〜$輝射 、x尤二極體封裝結構la、la，、lb、lc、Id，拖‘ + -封裝膠髀n。 坎s <， /忠13内的螢光物質可使發光二極體晶片14產 的光续^ Ο tL| • ^ 二王視出特定顏色’舉例來說，採用不同的營光物質 可使付鉍過封裝膠體13的光線可呈現出紅色、綠色、 色、頁色、白色…等顏色。 七 另外’根據實際的加速老化試驗結果顯示，複合材料 20 201005988 層（例如：矽膠摻混重量百分比30%的氮化硼，siHc〇ne/BN) 與一般習知的環氧樹脂或聚對苯二酰對苯二胺比較， -silicone/BN的複合材料層具有較佳的熱穩定性，一般而 5，在攝氏140度的操作溫度下操作接近1000小時左右， silicojie/BN的複合材料層的反射率僅衰退至85%左右，且 直到操作接近10000小時後，silic〇ne/BN的複合材料層仍 可保持有接近於20%的反射率，反觀環氧樹脂或聚對苯二 酰對苯一胺在攝氏140度的操作溫度下操作接近1〇〇〇小 ❺日守左右，環氧樹脂和聚對苯二醜對苯二胺的反射率則分別 衰退至70%和25%，且直到操作接近1〇〇〇〇小時後，則均 完全不具有任何反射光線的能力，換言之，環氧樹脂與聚 對笨二酰對苯二胺在這樣的操作狀態下，材料本身已完全 發生劣化的情开>。更值付一提的是，sihc〇ne/BN的複合材 料層在攝氏160度的操作溫度下操作小時後，仍可 保持有約85%的反射率，當然，此時的環氧樹脂或聚對苯 ❹二酰對苯二胺的反射率則別衰退至約30%和3°/。左右。故， 若以正常LED操作溫度小於8〇度的條件來說，使用 silicone/BN的複合材料層可以大幅增加發光二極體封裝 結構之使用壽命。 根據上述可知，本發明所揭露的發光二極體封裝結構 利用無機介電材料摻混於樹脂材料内之複合材料較佳的 光反射及耐熱特性，使得光線能量及晶月產生的熱量較不 易局部累積或影響發光二極體封裝結構。因此，縱使對於 具有較強旎1的备、外光發光二極體晶月而言，本發明所揭 201005988 露的發光二極體封裝結構仍可藉複合材料的光反射特性 以降低光線能量的？、積所導致之黃化、劣化等現象。 以上所述僅為舉例性，而非為限制性者。任 本發明之_與料，畔其储之等㈣ 應包含於後附之申請專利範圍中。 —夂更，均 【圖式簡單說明】 ❹ 圖1A為發光二極體封裝結構的立體圖； 面圖 圖為沿圖1A中截線L的發先— ; 糸九一極體封裝結構截 圃马圓ία的另 以及 ❹ 圖4為本發明之發光二極 【主要元件符號說明】 la、la’、lb、lc、ld :發光 11 :容置空間 封裝結構的 實施例 極體封裝結構 12、12’ ：承載單元 121 :底部 122、122’ ：側壁 13 :封裝膠體 ί4 :發光二極體晶片 22 201005988 16 :複合材料層 161 ·樹脂材料 162 :無機介電材料 18 ·反射電極 L :截線Oxidation records and combinations thereof are grouped into materials, and the second refractive index corresponding to the above materials is between L7 and 2.3. In addition, the above inorganic dielectric material 162 is blended with the resin material 161 by more than 10% by weight. 'More precisely, the weight percentage should be between 10% and 4%, so that the resin (4) (6) and the inorganic dielectric The sidewall 122' of the material 162 can achieve a reflectance of greater than or equal to 85% in the visible or ultraviolet light, or if the bottom 121 and the sidewall 122 in the carrying unit 12' are formed into a body. The load carrying unit 12 can have a reflectance of greater than or equal to 85% in an environment of visible light or ultraviolet light. Since the light-emitting diode wafer 14 in the present embodiment is located on the bottom portion 121 of the carrier unit 12, and the side wall 122 of the carrier unit 12', the resin material 161 and the inorganic dielectric material 162 are contained. Therefore, when the light-emitting diode wafer 14 is supplied with current and generates light, part of the light is directly emitted outside the light-emitting diode package structure lc, as indicated by the solid arrow in FIG. 3, and part of the light is The high reflective property of the resin material 161 and the inorganic dielectric material 162 is reflected outside the light emitting diode package structure lc, as indicated by the dashed arrow in FIG. Therefore, similar to the embodiment disclosed in FIG. 1B and FIG. 2, the present embodiment effectively reflects the light-emitting diode wafer 14 by the carrier unit 12' including the resin material 161 and the inorganic filler material 162. The light '俾' increases the brightness provided by the overall light-emitting diode package u. In addition, in the embodiment as disclosed in FIG. 4, the germanium light emitting diode package structure Id comprises a light-receiving diode chip ... at least - a reflective electric layers 16. The light-emitting diodes 14 are located on the carrier unit 12; the reflective electrodes 18 are located between the light-emitting diode wafers 14 and the carrier unit 12, and the composite material layer 16 is partially or completely covered by the carrier unit 12 adjacent to the reflections. The bearing 18 of the electrode 18 is on the surface 'in more detail, viewed from a top view (Fig. No-Bei), covered on the surface of the carrier 18 ❹ Ο not shown), covered in the carrier single ', read ^; ! 8 The composite layer 16 of the body wafer is two 12 4 mesh adjacent to the reflective electricity * 全元全 or 邱 邱 在 在 在 在 在 在 在 在 在 在 在 在 在It is to be that the thickness of "_16 is still greater than that of the material layer 16 containing one and is the same as the foregoing embodiment, and this composite (as shown in the enlarged portion of the material 161 and an inorganic dielectric material 162 in the resin material 161) And the inorganic dielectric material 162 is blended with the dielectric material 162. The material 161 has a first index of refraction; the second and second index of refractions have a second index of refraction' and the first-refraction system is interesting. The difference from the second shot _ is at least greater than the resin exposed by the carrying unit The material can be a circuit board. Moreover, in the embodiment, 161 is a silicone, and the inorganic dielectric material 162 is between the resin materials, and the inorganic dielectric =\ should have a first refractive index of 1·. 3 to 1.6 of aluminum, yttrium oxide, lanthanum / Q can be selected from the group consisting of boron nitride, aluminum oxide, lanthanum nitride, magnesium hydride, oxidation recorded and combinations thereof, 2010 20108888 group of materials, and the above The material corresponds to between 1.7 and 2.3. ', the second two refractive index is - according to this, because the hair in this embodiment is also on the carrying unit 12, and the composite layer ^ one body crystal moon 14 The surface unit 12 is adjacent to the surface of the reflective electrode 18 or completely covers the surface of the composite material layer 16 and the reflective electrode 18, so that the light from the LED substrate 14 is reflected in this embodiment. In combination, it is effective to enable the light generated by the LED chip 14 to achieve a soaking effect, and the material layer 16 and the reflective electrode 18 are inversely effected by the light-emitting efficiency of the composite structure Id, and The heat in the vicinity of the whole light-emitting diode sealing wafer 14 can be made by composite = medium: The arrangement of the diodes is evenly dispersed. q 16 and the reflective electrode 18, regardless of the structure of the light-emitting diode (four) shown in FIG. 1A and FIG. 4 above, the second diagram, FIG. 3 or the light-emitting diode Body a lb, lc, ld ❹ wafer or UV light-emitting diode = 14 = visible light-emitting diode body wafer or ultraviolet light II: body crystal can be used!: light-emitting two can improve the light "day" Composite material layer light-emitting diode package structure structure on a load-bearing unit covering the composite material: Γ ° However, it should be noted that, if it covers the light-emitting diode package structure of the carrier unit, it is nitrided, oxidized The inorganic dielectric material wafer or ultraviolet light ray in the material layer of Ming or 55 is suitable for the benefit 搂 film in the composite layer of visible light illuminating diode, but if it is covered on the carrying unit... The material is oxidized, barium sulfate, oxidized 18 201005988 magnesium or zirconia, only for UV light-emitting diode chips. In addition, for the light emitting diode package structure including the mixed resin material and the inorganic dielectric material in the carrying unit, if the resin material is silicone, it is suitable for the visible light emitting diode chip or the ultraviolet light emitting diode. Bulk wafer, but if the resin material is poly(p-phenylene terephthalamide, polymethyl methacrylate, epoxy resin, polyethylene terephthalate or polycarbonate), it is only suitable for visible light emitting diodes. The bulk dielectric material; and the inorganic dielectric material is selected as described above, that is, if the inorganic dielectric material in the carrying unit is boron nitride, aluminum oxide or aluminum nitride, it is suitable for visible light emitting diode wafer or ultraviolet light emitting. Diode wafers, however, if the inorganic dielectric material in the carrier unit is yttria, barium sulfate, magnesia or zirconia, it is only suitable for UV light-emitting diode wafers. Taking the light-emitting diode package structure lc shown in FIG. 3 as an example, since the carrier unit 12' is composed of the composite material layer 16 (including the resin material 161 and the inorganic dielectric material 162), it is fabricated. The size of the light-emitting diode package lc can be reduced to 2.6 mm * 1.6 mm * 1.0 mm or less in terms of length, width and height (the production method can be injection molding), which meets the specifications of miniaturization and at the same time A package structure having an oblique shape is formed. - In particular, for the ultraviolet light-emitting diode chip, due to the composite, the resin material 161 of the material layer 16 is Shishijiao, and the inorganic dielectric material 162 is boron nitride, oxidized Ming, and nitrided. Cerium oxide, barium sulfate, oxidized or cerium oxide, so that the composite layer 16 has excellent reflectivity (at least greater than 85%) for ultraviolet light in the wavelength range of 300 nm to 430 nm, for example, 19 201005988 The composite material layer (silicone/BN) composed of tantalum-doped boron nitride can maintain a reflectance of about 91% under ultraviolet light with a wavelength of 365 nm and a light source intensity of 200 mW/cm 2 . 'And at 48 hours of operation time, the reflectivity of the silicone/BN composite layer only decays by about 2%. However, the conventional pure ceramic material has a reflectance of less than 80% for ultraviolet light, so the light-emitting diode package structure having the composite material layer of the present invention has a higher reflectance for ultraviolet light than the conventional light-emitting material composed of pure ceramic material. The polar package structure is good. In addition, as shown in FIG. 2, the LED package structure lb is covered with a composite material layer 16' on the surface of the sidewall 122, so that compared with the conventional LED package structure, The LED package structure lb is more suitable for packaging an ultraviolet light emitting diode chip. In addition, the structure of the encapsulant 13 is disclosed in the LED package structures la, la, lb, lc, and ld which are not shown in FIG. 1A, FIG. 1B, FIG. 1C, FIG. 2, FIG. 3 and FIG. . As with the conventional encapsulant, the encapsulant 13 disclosed herein may contain a fluorescent substance (the figure is not marked to be different; 5) the light generated by the mask wafer 14 can pass through the encapsulation of the flash Team & Body 13 Sumbe's absorption and conversion to a specific wavelength range of private apricots - ~ $ 辉, x especially diode package structure la, la, lb, lc, Id, drag ' + - Encapsulated plastic 髀n., fluorescing substance in / zhong 13 can make the light produced by the light-emitting diode chip 14 ^ tL| • ^ Two kings see a specific color 'for example, different The camping light material can make the light of the encapsulating colloid 13 appear red, green, color, page color, white, etc. 7. In addition, according to the actual accelerated aging test results, the composite material 20 201005988 layer (for example: Silicone blending 30% by weight of boron nitride, siHc〇ne/BN) Compared to conventional epoxy resins or poly(p-phenylene terephthalamide), the -silicone/BN composite layer has better Thermal stability, generally 5, operating close to 1000 hours at an operating temperature of 140 degrees Celsius On the left and right, the reflectivity of the silicojie/BN composite layer only decays to about 85%, and the silic〇ne/BN composite layer can still maintain a reflectivity close to 20% until the operation is close to 10,000 hours. Oxygen resin or poly(p-phenylene terephthalamide) is operated at an operating temperature of 140 ° C, which is close to 1 〇〇〇 ❺ , , , , , , , , , , , , , 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂 环氧树脂Recession to 70% and 25%, and until the operation is close to 1 hour, there is no ability to reflect light at all, in other words, epoxy resin and poly-p-phenylene p-phenylenediamine in such operations In the state, the material itself has completely deteriorated. It is worth mentioning that the composite layer of sihc〇ne/BN can still maintain about 85 after operating at an operating temperature of 160 degrees Celsius. % reflectivity, of course, the reflectivity of epoxy resin or polyparaphenylene diphenyl p-phenylenediamine at this time is not reduced to about 30% and 3 ° /. Therefore, if the normal LED operating temperature is less than In the case of 8 twist conditions, the composite layer using silicone/BN can be used. According to the above, the light-emitting diode package structure disclosed in the present invention utilizes the light-reflecting and heat-resistant characteristics of the composite material mixed with the inorganic dielectric material in the resin material. The light energy and the heat generated by the crystal moon are less likely to locally accumulate or affect the light-emitting diode package structure. Therefore, even for a standby and external light-emitting diode crystal having a strong 旎1, the present invention discloses 201005988 The exposed LED package structure can still reduce the light energy by the light reflection characteristics of the composite material? The yellowing and deterioration caused by the accumulation. The above is intended to be illustrative only and not limiting. Any of the materials and the materials of the present invention (4) should be included in the scope of the appended patent application.夂 , , 均 图 图 图 ❹ ❹ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 FIG. 4 is a light-emitting diode of the present invention. [Main component symbol description] la, la', lb, lc, ld: illuminating 11: accommodating space package structure embodiment of the polar body package structure 12, 12 ': carrying unit 121: bottom 122, 122': side wall 13: encapsulant colloid ί4: light emitting diode wafer 22 201005988 16 : composite material layer 161 · resin material 162 : inorganic dielectric material 18 · reflective electrode L : cut line
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