TW201005057A - Adhesive composition, adhesive film and dicing die-attach film - Google Patents
Adhesive composition, adhesive film and dicing die-attach film Download PDFInfo
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- TW201005057A TW201005057A TW98121216A TW98121216A TW201005057A TW 201005057 A TW201005057 A TW 201005057A TW 98121216 A TW98121216 A TW 98121216A TW 98121216 A TW98121216 A TW 98121216A TW 201005057 A TW201005057 A TW 201005057A
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- adhesive composition
- adhesive
- film
- substrate
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- 239000000203 mixture Substances 0.000 title claims abstract description 98
- 239000000853 adhesive Substances 0.000 title claims abstract description 91
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 88
- 239000002313 adhesive film Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000003054 catalyst Substances 0.000 claims abstract description 25
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 20
- 125000000524 functional group Chemical group 0.000 claims abstract description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 49
- 229920000647 polyepoxide Polymers 0.000 claims description 45
- 239000003822 epoxy resin Substances 0.000 claims description 43
- 239000000178 monomer Substances 0.000 claims description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 239000004925 Acrylic resin Substances 0.000 claims description 14
- 229920000178 Acrylic resin Polymers 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 10
- 239000004848 polyfunctional curative Substances 0.000 claims description 10
- 125000001931 aliphatic group Chemical group 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000002966 varnish Substances 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 239000011859 microparticle Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 36
- 239000011347 resin Substances 0.000 abstract description 36
- -1 polysiloxane Polymers 0.000 abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 23
- 238000010521 absorption reaction Methods 0.000 abstract description 19
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract description 4
- 239000004793 Polystyrene Substances 0.000 abstract description 4
- 229920002223 polystyrene Polymers 0.000 abstract description 4
- 229920001296 polysiloxane Polymers 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 43
- 239000002245 particle Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 21
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 14
- 238000007789 sealing Methods 0.000 description 13
- 229920001971 elastomer Polymers 0.000 description 12
- 239000005060 rubber Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000002131 composite material Substances 0.000 description 9
- 239000010419 fine particle Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000011800 void material Substances 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000005011 phenolic resin Substances 0.000 description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 5
- 150000001721 carbon Chemical group 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 229920001568 phenolic resin Polymers 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- 229940126062 Compound A Drugs 0.000 description 4
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000005998 bromoethyl group Chemical group 0.000 description 3
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical group OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 150000001993 dienes Chemical class 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000007037 hydroformylation reaction Methods 0.000 description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- KRHOKZHVSQKTJI-BJBXXJATSA-N (1S,3R,8R,9S,11R)-2,2-dichloro-3,7,7,11-tetramethyl-10-oxatetracyclo[6.5.0.01,3.09,11]tridecane Chemical compound CC1(C)CCC[C@@]2(C)C(Cl)(Cl)[C@]22CC[C@@](C)(O3)[C@@H]3[C@@H]21 KRHOKZHVSQKTJI-BJBXXJATSA-N 0.000 description 1
- DJKGDNKYTKCJKD-BPOCMEKLSA-N (1s,4r,5s,6r)-1,2,3,4,7,7-hexachlorobicyclo[2.2.1]hept-2-ene-5,6-dicarboxylic acid Chemical compound ClC1=C(Cl)[C@]2(Cl)[C@H](C(=O)O)[C@H](C(O)=O)[C@@]1(Cl)C2(Cl)Cl DJKGDNKYTKCJKD-BPOCMEKLSA-N 0.000 description 1
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- YBQZXXMEJHZYMB-UHFFFAOYSA-N 1,2-diphenylhydrazine Chemical compound C=1C=CC=CC=1NNC1=CC=CC=C1 YBQZXXMEJHZYMB-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PRBHEGAFLDMLAL-UHFFFAOYSA-N 1,5-Hexadiene Natural products CC=CCC=C PRBHEGAFLDMLAL-UHFFFAOYSA-N 0.000 description 1
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- WGCYRFWNGRMRJA-UHFFFAOYSA-N 1-ethylpiperazine Chemical compound CCN1CCNCC1 WGCYRFWNGRMRJA-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical group CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- SCZZNWQQCGSWSZ-UHFFFAOYSA-N 1-prop-2-enoxy-4-[2-(4-prop-2-enoxyphenyl)propan-2-yl]benzene Chemical compound C=1C=C(OCC=C)C=CC=1C(C)(C)C1=CC=C(OCC=C)C=C1 SCZZNWQQCGSWSZ-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- LKMJVFRMDSNFRT-UHFFFAOYSA-N 2-(methoxymethyl)oxirane Chemical compound COCC1CO1 LKMJVFRMDSNFRT-UHFFFAOYSA-N 0.000 description 1
- BBEAHXXUYVGKPR-UHFFFAOYSA-N 2-[[4-(oxiran-2-ylmethoxy)cyclohexen-1-yl]oxymethyl]oxirane Chemical compound C1OC1COC(CC=1)CCC=1OCC1CO1 BBEAHXXUYVGKPR-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- ZXTHWIZHGLNEPG-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1,3-oxazole Chemical compound O1CCN=C1C1=CC=CC=C1 ZXTHWIZHGLNEPG-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
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- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- RSJKGSCJYJTIGS-BJUDXGSMSA-N undecane Chemical compound CCCCCCCCCC[11CH3] RSJKGSCJYJTIGS-BJUDXGSMSA-N 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- HPICRATUQFHULE-UHFFFAOYSA-J uranium(4+);tetrachloride Chemical compound Cl[U](Cl)(Cl)Cl HPICRATUQFHULE-UHFFFAOYSA-J 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
Description
201005057 六、發明說明: 【發明所屬之技術領域】 本發明有關適合於將半導體晶片接著於基板之用的接 * 著劑組成物,詳言之,有關一種因含有具有酚醛性羥基或 環氧基之含有有機聚矽氧烷構造之化合物而能製得低彈性 模數(low modulus of elasticity)及低吸水率(low water absorption )之接著劑硬化物層、且不致於產生空隙( Φ void )之下能將半導體晶片接著於基板之接著劑組成物, 以及採用該接著劑組成物之接著薄膜及切割•黏晶接著薄 膜(dicing · die attached film )。 【先前技術】 半導體裝置,係藉由(i)將形成有IC(Intergrated circuit )電路之大直徑矽晶圓在切割(dicing )過程中切 開爲半導體晶片、(Π )使用硬化性的液狀接著劑(die # bonding agent,晶片接著材料)將該晶片熱壓黏於引線框 架(lead frame)並加以固定(mount) ,(iii)在電極間 的絲焊(wire bonding )之後,(iv )爲作業處理( handling )性的改善及保護來自外部環境的影響起見,加 以密封所製造者。密封的形態中,有金屬密封或陶瓷密封 等的氣密密封(air-tight sealing)、及使用樹脂之非氣密 密封(non air-tight sealing)。目前,由於後者的方法、 特別是使用樹脂之傳遞成型(transfer mould)法,係量產 性優異、且廉價之故,一般最爲廣用。 -5- 201005057 惟由於上述液狀接著劑,係容易發生從晶片端的溢出 、或不均勻的厚度所起因之晶片的傾斜的發生而引起之絲 焊的不佳等之故,近年來開始使用經將接著劑層設置於薄 膜上之晶片接著薄膜(die bonding film ) 。 經轉寫於引線框架之接著劑,則在固定過程後加以硬 化,並於絲焊、樹脂密封等過程中曝露於熱氣中。半導體 組件,係如與晶片同尺寸的封裝構造(CSP)構造、層合 ^ 有晶片之封裝構造(疊層CSP、SiP (系統組件))等般 @ ,由於逐年形成爲小型(compact )之故,對此種接著劑 所要求之耐熱應力性、耐吸水性已成爲非常高度者。 另一方面,基板中存在有因配線等的電路元件( circuit element)所引起之凹凸部,當對此種基板進行半 導體晶片之熱壓接合(thermo compression bonding)時, 如作爲晶片接著材料的接著薄膜、亦即,晶片接著薄膜不 能完全塡埋凹部時,則其未被塡埋之部分即成爲空隙( void )而殘留,並該空隙將在軟熔爐(reflow furnace )內 〇 的加熱中膨脹,以致有可能破壞接著劑層而影響半導體裝 置的信賴性的情形。特別是,近年來,於對應無鉛焊料之 高溫(265 °C )下,開始要求具有抗軟熔(anti-reflow )性 ,而表示重視防止空隙的形成之重要性。以下,將按不殘 留空隙之方式塡埋基板上的凹部之性能,簡稱爲「埋置性 倉 g (bury in performance )」。 爲解決上述問題,可考慮採取按經熔融之晶片接著薄 膜侵入基板上所存在之凹部進行塡埋之方式,使用具有低 -6- 201005057 熔融黏度之晶片接著薄膜而將半導體晶片熱壓黏於基板上 ’藉以極力避免空隙之形成之方法,惟仍然未能完全消除 空隙之形成’又由於爲熱壓黏而耗費長時間、或需要高壓 • 力之故,會發生對生產性不良影響之問題。再者,亦有晶 片接著薄膜從晶片端大大露出,以致有產生電極的污染之 問題。 作爲解決上述問題之另一方法,有由於使用密封樹脂 φ 之塑模係在高溫高壓下進行之故,將所殘留之空隙在樹脂 密封過程中加熱、壓縮,以使空隙的體積變小之狀態下再 使其被吸收於晶片接著薄膜中、或在維持縮小空隙的體積 之狀態下進行晶片接著薄膜之加熱硬化,藉以抽除空隙之 方法。此種方法,由於不需要特別的過程之故,係在製造 面有利。 一方面’在來’作爲晶片接著之用的上述接著劑,具 體而言,而開發有一種’含有可塑性樹脂、環氧樹脂、硬 φ 化劑、以及觸媒之接著材料(例如,專利文獻1至5 )。 但’此等接著材料,雖然接著性優異,惟其硬化物之彈性 模數及吸水率係較偏高者。又,採用該接著材料之接著薄 膜’係由於硬化反應之進行快速之故,如適用於樹脂密封 過程中抽除空隙上之上述方法時,則因樹脂密封過程前的 絲焊過程之加熱而增大薄膜熔融黏度的上升速度,以致難 於樹脂密封過程中抽除空隙。亦即,熔融黏度增大之結果 ’不能充分變小空隙的體積,又,難於使空隙吸收於樹脂 中。如此’以往的接著劑,係難於充分塡埋基板上的凹部 -7- 4 201005057 之故,需要改良埋置性能。 〔專利文獻1〕日本專利特開平7-22425 9號公報 〔專利文獻2〕日本專利特開平8-27427號公報 〔專利文獻3〕日本專利特開平1 0- 1 633 91號公報 胃 〔專利文獻4〕日本專利特開平1 1 - 12545號公報 〔專利文獻5〕日本專利特開2000- 1 54361號公報 【發明內容】 @ 〔發明所欲解決之課題〕 本發明,係以提供能製造低彈性模數及低吸水率的接 著劑硬化物層、且埋置性能優異的接著劑組成物,以及採 用該接著劑組成物之接著薄膜及切割•黏晶接著薄膜爲目 的者。 〔用以解決課題之手段〕 本發明人等發現,如藉由含有具有酚醛性羥基或環氧 © 基之含特定的有機聚矽氧烷構造之化合物之接著劑組成物 ,即可達成上述目的之事實。 ^ 亦即,本發明之第一項,提供一種接著劑組成物,其 特徵爲:含有 (A) 聚苯乙烯換算的重量平均分子量爲10,〇〇〇至 1,500,〇〇〇,而含有對下述(B)及(C)成分的一方或雙 方具有反應性之官能基之(甲基)丙烯酸性樹脂、 (B) 可以下述一般式(1): -8 - 201005057 【化1】201005057 VI. Description of the Invention: [Technical Field] The present invention relates to a composition suitable for use in attaching a semiconductor wafer to a substrate, in particular, a phenolic hydroxyl group or epoxy group A compound containing an organic polyoxane structure can produce a low modulus of elasticity and a low water absorption adhesive layer without causing voids (Φ void ) The adhesive composition capable of bonding the semiconductor wafer to the substrate, and the adhesive film and the dicing die attached film using the adhesive composition. [Prior Art] A semiconductor device is formed by (i) cutting a large-diameter 矽 wafer on which an IC (Intergrated Circuit) circuit is formed into a semiconductor wafer during dicing, and using a hardenable liquid. The die (bonding agent) heat-bonds the wafer to a lead frame and mounts it, (iii) after wire bonding between the electrodes, (iv) The improvement of the handling process and the protection of the external environment, and the manufacturer of the seal. In the sealed form, there are air-tight sealing such as metal sealing or ceramic sealing, and non air-tight sealing using a resin. At present, the latter method, particularly the transfer mould method using a resin, is excellent in mass productivity and low in cost, and is generally most widely used. -5-201005057 However, due to the above-mentioned liquid adhesive, it is easy to cause the occurrence of the tilt of the wafer due to the overflow of the wafer end or the uneven thickness, and the use of the tilt of the wafer is poor. The adhesive layer is placed on a die bonding film on the film. The adhesive transferred to the lead frame is hardened after the fixing process and exposed to hot gas during wire bonding, resin sealing, and the like. The semiconductor device is a package structure (CSP) structure of the same size as a wafer, a package structure of a wafer (a laminated CSP, a SiP (system component)), etc., which is formed as a compact year by year. The heat stress resistance and water absorption resistance required for such an adhesive have become very high. On the other hand, in the substrate, there is a concavo-convex portion caused by a circuit element such as a wiring, and when the substrate is subjected to thermo compression bonding of the semiconductor wafer, for example, as a subsequent material of the wafer. When the film, that is, when the wafer and the film are not completely immersed in the recess, the portion which is not buried is left as a void, and the void will expand in the heating of the crucible in the reflow furnace. Therefore, it is possible to damage the adhesive layer and affect the reliability of the semiconductor device. In particular, in recent years, it has been demanded to have anti-reflow properties at a high temperature (265 ° C) corresponding to lead-free solder, and it has been emphasized that importance of preventing the formation of voids is emphasized. Hereinafter, the performance of burying the concave portion on the substrate so as not to leave a void is simply referred to as "bury in performance". In order to solve the above problem, it is conceivable to heat-bond the semiconductor wafer to the substrate by using a recessed portion existing on the substrate after the molten wafer and the film invade the substrate, using a wafer with a low -6-201005057 melt viscosity. On the 'by the way to avoid the formation of voids, but still can not completely eliminate the formation of voids' and because of the long time for hot pressure bonding, or the need for high pressure and force, there will be problems of adverse effects on productivity. Furthermore, there is also a wafer followed by a film which is largely exposed from the wafer end, so that there is a problem of contamination of the electrode. As another method for solving the above problems, since the mold using the sealing resin φ is subjected to high temperature and high pressure, the remaining voids are heated and compressed in the resin sealing process to make the volume of the voids small. Then, it is absorbed in the wafer followed by the film, or in a state in which the volume of the reduced void is maintained, and the method of removing the void by the heat-hardening of the wafer followed by the film is performed. This method is advantageous in terms of manufacturing because no special process is required. On the one hand, the above-mentioned adhesive agent for the subsequent use of the wafer is specifically developed, and a material containing a plastic resin, an epoxy resin, a hard oxidizing agent, and a catalyst is developed (for example, Patent Document 1) To 5). However, these subsequent materials are excellent in adhesion, but the elastic modulus and water absorption of the cured product are relatively high. Moreover, the adhesive film using the adhesive material is fast due to the hardening reaction, such as the above method for removing the voids in the resin sealing process, and is increased by the heating of the wire bonding process before the resin sealing process. The rising speed of the melt viscosity of the large film makes it difficult to remove the void during the resin sealing process. That is, as a result of the increase in the melt viscosity, the volume of the voids cannot be sufficiently reduced, and it is difficult to absorb the voids in the resin. Such a conventional adhesive is difficult to fully bury the concave portion on the substrate -7-4 201005057, and it is necessary to improve the embedding performance. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 5] Japanese Patent Laid-Open Publication No. 2000-154861. SUMMARY OF THE INVENTION [The present invention provides a low elasticity. An adhesive composition layer having a modulus and a low water absorption rate, and an adhesive composition excellent in embedding property, and an adhesive film using the adhesive composition and a cut/adhesive film. [Means for Solving the Problem] The present inventors have found that the above object can be attained by an adhesive composition containing a compound having a phenolic hydroxyl group or an epoxy group-containing compound having a specific organic polyoxyalkylene structure. The facts. That is, the first aspect of the present invention provides an adhesive composition characterized by containing (A) polystyrene-equivalent weight average molecular weight of 10, 〇〇〇 to 1,500, 〇〇〇, and (M)acrylic resin containing a functional group reactive with one or both of the following components (B) and (C), (B) The following general formula (1): -8 - 201005057 】
(1) 〔式中,Ri爲互相獨立之氫原子或者非取代或取代之 碳原子數1至4旳脂肪族一價烴基、X爲氫原子或者縮水 # 甘油基、Z爲含有有機聚矽氧烷構造之2價有機基,而m 爲1以上之數。〕 表示之含有有機聚矽氧烷構造之化合物、以及 (C)硬化觸媒及/或硬化劑。 本發明之第二項,提供一種接著薄膜,其特徵爲:具 備有基材、及經設置於該基板上之由上述接著劑組成物所 成之層。 本發明之第三項,提供一種切割·黏晶接著薄膜,其 特徵爲:具備有;具有基材及經設置於其上面之黏合劑層 之切割薄膜(dicing film )、及經設置於該切割薄膜的黏 合劑層上之由上述接著劑組成物所成之層。 〔發明之效果〕 本發明之接著劑組成物,係由於抑制有因絲焊過程中 的加熱所引起之熔融黏度的上升,而具有能在樹脂密封過 程中使空隙充分消失之熔融黏度之故,能按容易且充分方 式抽除空隙,以致具有優異的埋置性能。又,該接著劑組 -9- 201005057 成物,可藉由加熱硬化而對各種基材具有高度接著力之同 時,能製得低彈性模數及低吸水率的接著劑硬化物層。因 而’該接著劑組成物’係在製造信賴性高的半導體裝置方 面有用者。 〔發明之最佳實施形態〕 以下,將詳細說明本發明。 〔(A)成分〕 (A)成分’係聚苯乙稀換算的重量平均分子量(Mw )爲10,000至1,500,000,而含有對下述(B)有(C)成 分的一方或雙方具有反應性之官能基之(甲基)丙烯酸系 樹脂。本說明書中’(甲基)丙烯酸系樹脂,係指含有由 丙烯酸、丙烯酸衍生物、甲基丙烯酸以及甲基丙烯酸衍生 物所成之源自(甲基)丙烯酸系單體之單體單元之聚合物 之意。(A)成分,可以一種單獨使用、亦可組合二種以 ❹ 上使用。如以組合二組以上使用之情形,(A )成分,亦 可爲含有前述官能基之(甲基)丙烯酸系樹脂與不含有前 述官能基之(甲基)丙烯酸系樹脂的混合物。 (A)成分而言,可例舉:屬於上述(甲基)丙烯酸 系單體的單獨聚合物或共聚物或者該(甲基)丙烯酸系單 體與其他單體的共聚物,其聚苯乙烯換算的重量平均分子 量爲10,000至1,5〇〇,〇〇〇,而含有對下述(B)及(C)成 分的一方或雙方具有反應性之官能基之聚合物。於(甲基 -10- 201005057 )丙烯酸系單體與其他單體的共聚物中,源自 單體單元的含量,係對(A)成分中的全單體 爲5至50莫耳%、更佳爲1〇至30莫耳%。於 烯酸系單體與其他單體的共聚物中,此等單體 一種單獨使用亦可組合二種以上使用。 上述丙烯酸衍生物而言,可例舉:丙烯酸 酸乙酯、丙烯酸丁酯、丙烯酸異丁酯、丙烯酸 Φ 、丙烯酸月桂酯等的丙烯酸烷基酯;丙烯酸羥 酸羥丙酯等的丙烯酸羥基烷基酯;丙烯酸苄酯 族烴基之丙烯酸酯;二甲基丙烯酸醯胺等的丙 亞胺丙烯酸酯TO-14 92 (商品名、東亞合成工 含醯亞胺基之丙烯酸酯;丙烯酸縮水甘油酯等 之丙烯酸酯。 上述甲基丙烯酸衍生物而言,可例舉:甲 酯、甲基丙烯酸乙酯、甲基丙烯酸丁酯、甲基 φ 酯、甲基丙烯酸2-乙基己酯、甲基丙烯酸月桂 丙烯酸烷基酯;甲基丙烯酸羥乙酯、甲基丙烯 ^ 的甲基丙烯酸羥基烷基酯;甲基丙烯酸苄酯等 烴基之甲基丙烯酸酯;二甲基甲基丙烯醯胺等 醯胺;醯亞胺甲基丙烯酸酯等之含醯亞胺基之 酯;甲基丙烯酸縮水甘油酯等的含環氧基之甲 〇 上述的其他單體而言,可例舉:丙烯腈、 二烯、烯丙基衍生物(烯丙基醇、醋酸烯丙酯 其他單體之 單元,較佳 (甲基)丙 可分別各以 甲酯、丙烯 2-乙基己酯 乙酯、丙烯 等的含芳香 烯醯胺;醯 業製)等的 的含環氧基 基丙烯酸甲 丙烯酸異丁 酯等的甲基 酸羥丙基等 的含芳香族 的甲基丙烯 甲基丙烯酸 基丙烯酸酯 苯乙烯、丁 、烯丙基苯 -11 - 201005057 基醚、烯丙基苄基醚、烯丙基安息香酸等)。 於本發明之較佳實施形態中’ (A)成分’係含有可 以下述式: 【化2】(1) wherein R is a mutually independent hydrogen atom or an unsubstituted or substituted carbon atom having 1 to 4 Å of an aliphatic monovalent hydrocarbon group, X is a hydrogen atom or a shrinkage # glyceryl group, and Z is an organic polyoxyl The divalent organic group of the alkane structure, and m is a number of 1 or more. 〕 indicates a compound containing an organic polyoxane structure, and (C) a hardening catalyst and/or a hardener. According to a second aspect of the present invention, there is provided a film comprising: a substrate; and a layer formed of the above-mentioned adhesive composition provided on the substrate. According to a third aspect of the present invention, a dicing-bonding film is provided, comprising: a dicing film having a substrate and an adhesive layer disposed thereon, and a dicing film disposed on the dicing film A layer formed on the adhesive layer of the film by the above-described adhesive composition. [Effects of the Invention] The adhesive composition of the present invention has a melt viscosity which is caused by heating during the wire bonding process, and has a melt viscosity which can sufficiently disappear the void during the resin sealing process. The voids can be removed in an easy and sufficient manner so as to have excellent embedding properties. Further, the adhesive composition -9-201005057 can be obtained by heat hardening to have a high adhesion force to various substrates, and an adhesive cured layer having a low modulus of elasticity and a low water absorption can be obtained. Therefore, the "adhesive composition" is useful for manufacturing a highly reliable semiconductor device. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. [(A) component] The component (A) is a polystyrene-reduced weight average molecular weight (Mw) of 10,000 to 1,500,000, and contains one or both of the following (B) components (C). A functional (meth)acrylic resin. In the present specification, '(meth)acrylic resin refers to a polymerization of a monomer unit derived from a (meth)acrylic monomer derived from acrylic acid, an acrylic acid derivative, methacrylic acid, and a methacrylic acid derivative. The meaning of things. The component (A) may be used singly or in combination of two or more. When it is used in combination of two or more groups, the component (A) may be a mixture of a (meth)acrylic resin containing the above functional group and a (meth)acrylic resin not containing the above functional group. The component (A) may, for example, be a single polymer or copolymer belonging to the above (meth)acrylic monomer or a copolymer of the (meth)acrylic monomer and another monomer, and polystyrene. The converted weight average molecular weight is 10,000 to 1,5 Å, and is a polymer containing a functional group reactive with one or both of the following components (B) and (C). In the copolymer of (methyl-10-201005057) acrylic monomer and another monomer, the content derived from the monomer unit is 5 to 50 mol% based on the total monomer in the component (A), Good for 1 to 30 moles. In the copolymer of the olefinic monomer and the other monomer, one type of these monomers may be used alone or in combination of two or more. The acrylic acid derivative may, for example, be an alkyl acrylate such as ethyl acrylate, butyl acrylate, isobutyl acrylate, acryl acrylate or lauryl acrylate; or a hydroxyalkyl group such as hydroxypropyl hydroxyacrylate. Ester; acrylate of benzyl acrylate group; propylimine acrylate TO-14 92 such as decylamine dimethacrylate (trade name, yttrium amide group containing yttrium imino group; glycidyl acrylate) The methacrylic acid derivative may, for example, be methyl ester, ethyl methacrylate, butyl methacrylate, methyl φ ester, 2-ethylhexyl methacrylate or methacrylic acid laurel. Alkyl acrylate; hydroxyethyl methacrylate, methacrylic acid hydroxyalkyl methacrylate; hydrocarbyl methacrylate such as benzyl methacrylate; decylamine such as dimethyl methacrylamide; An anthracene group-containing ester such as quinone imine methacrylate; an epoxy group-containing formamidine such as glycidyl methacrylate; and the other monomer described above may, for example, be acrylonitrile or a diene. Allyl Derivatives (allyl alcohol, allyl acetate, other monomer units, preferably (methyl) propyl, each containing methyl ester, propylene 2-ethylhexyl ester ethyl ester, propylene, etc. Aromatic-containing methacrylic methacrylic acrylate such as hydroxypropyl methyl hydroxypropyl group, such as an epoxy group-containing butyl acrylate or the like, such as phthalic acid, etc. Benzene-11 - 201005057 base ether, allyl benzyl ether, allyl benzoic acid, etc.). In the preferred embodiment of the present invention, the '(A) component' is contained in the following formula: [Chemical 2]
CN 表示之單體單元之共聚物。此種共聚物’如作爲上述其他 的單體而採用丙烯腈時則可製造。 (A )成分中的官能基’從所得之接著劑硬化物層的 接著性的觀點來看,較佳爲環氧基、羧基、或者其組合。 (A)成分中的官能基,例如’作爲(A)成分的原料所 用之單體的至少一部分,而採用含有該官能基之單體以進 行(A)成分之合成。則可導入於(A)成分中。含有該 官能基之單體而言,可例舉:丙烯酸、甲基丙烯酸、含有 環氧基之丙烯酸衍生物(例如’縮水甘油基丙烯酸酯)、 含有環氧基之甲基丙烯酸衍生物(例如,縮水甘油基甲基 丙烯酸酯),此等單體可以單獨一種使用,亦可以組合二 種以上使用。 (A)成分中的官能基的含量,係對(A)成分每 l〇〇g較佳爲0.002至0.1莫耳、更佳爲0.005至0.05莫耳 。如該含量在此範圍內,則可容易製得具有充分的埋置& 能之組成物及具有充分的接著力之接著劑硬化物層。 (A)成分的聚苯乙烯換算的重量平均分子量,通% 爲 1 0,000 至 1,500,000、較佳爲 50,000 至 1,500,000、_ 佳爲1 00,000至ι,οοο,οοο。如上述分子量在1 0,000以卞 201005057 時,則可能所得接著劑硬化物層的接著性及強度會下降。 如上述分子量在1,5 00,000以上時,則可能所得組成物之 黏度過高而操作性會不佳。A copolymer of monomer units represented by CN. Such a copolymer ' can be produced by using acrylonitrile as the other monomer described above. The functional group ' in the component (A) is preferably an epoxy group, a carboxyl group, or a combination thereof from the viewpoint of the subsequent adhesion of the obtained cured layer of the adhesive. The functional group in the component (A), for example, is at least a part of a monomer used as a raw material of the component (A), and a monomer containing the functional group is used to carry out the synthesis of the component (A). It can be introduced into the component (A). The monomer having such a functional group may, for example, be acrylic acid, methacrylic acid, an epoxy group-containing acrylic acid derivative (for example, 'glycidyl acrylate), or an epoxy group-containing methacrylic acid derivative (for example). , glycidyl methacrylate), these monomers may be used alone or in combination of two or more. The content of the functional group in the component (A) is preferably from 0.002 to 0.1 mol, more preferably from 0.005 to 0.05 mol per 1 g of the component (A). If the content is within this range, a composition having sufficient embedding and energy and a layer of an adhesive having sufficient adhesion can be easily obtained. The polystyrene-equivalent weight average molecular weight of the component (A) is from 10,000 to 1,500,000, preferably from 50,000 to 1,500,000, preferably from 10,000,000 to ι, οοο, οοο. If the molecular weight is above 10,000 to 050 201005057, the adhesion and strength of the resulting cured layer of the adhesive may be lowered. When the molecular weight is 1,500,000 or more, the viscosity of the resulting composition may be too high and the handleability may be poor.
又,(A)成分的(甲基)丙烯酸系樹脂,依熱機械 分析(TMA,thermo mechanical analysis)所測定之玻璃 化溫度(Tg ),較佳爲-40°C至100°C、更佳爲-10至70°C Φ 〔(B)成分〕 (B)成分,係可以上述一般式(1)表示之含有機聚 矽氧烷構造之化合物。(B)成分,可以單獨一種使用, 亦可以組合二種以上使用。本發明之組成物中,由於含有 (B )成分之故,能製得彈性模數及吸水率低的硬化物層 〇 又,如上述一般式(1)中X爲氫原子時,則(B)成 φ 分中的酚醛性羥基,係與通常的酚醛化合物中的酚醛性羥 基比較,爲與環氧基的反應性受抑制者。另一方面,如上 述一般式(1)中X爲縮水甘油基時,則(B)成分中的環 氧基,係與通常的環氧化合物中的環氧基比較,爲與酚醛 性羥基的反應性受抑制者。因而,如將(B )成分使用爲 本發明之組成物之結果,可達成良好的埋置性能。 於上述一般式(1)中,R!爲互相獨立之氫原子或者 非取代或取代之碳原子數1至4、較佳爲1至2的脂肪族 一價烴基。該脂肪族一價烴基而言,可列舉:甲基、乙基 -13- 201005057 、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基等 的烷基;對此等基的碳原子所結合之氫原子的一部分或全 部係經被氟原子、溴原子、氯原子等的鹵素原子等所取代 之基、例如,氯甲基、溴乙基、3,3,3-三氟丙基等的鹵素 取代烷基等。此等之中,特佳爲氫原子、甲基。Further, the (meth)acrylic resin of the component (A) has a glass transition temperature (Tg) measured by thermomechanical analysis (TMA), preferably -40 ° C to 100 ° C, more preferably The component (B) which is -10 to 70 ° C Φ [(B) component] (B) is a compound having a structure of a polyorganosiloxane represented by the above general formula (1). The component (B) may be used alone or in combination of two or more. In the composition of the present invention, since the component (B) is contained, a cured layer having a low modulus of elasticity and a low water absorption can be obtained. When X in the above general formula (1) is a hydrogen atom, (B) The phenolic hydroxyl group in the φ group is compared with the phenolic hydroxyl group in the usual phenolic compound, and the reactivity with the epoxy group is suppressed. On the other hand, when X is a glycidyl group in the above general formula (1), the epoxy group in the component (B) is compared with the epoxy group in the usual epoxy compound, and is a phenolic hydroxyl group. Responsiveness is suppressed. Therefore, if the component (B) is used as a result of the composition of the present invention, good embedding performance can be achieved. In the above general formula (1), R! is a mutually independent hydrogen atom or an unsubstituted or substituted aliphatic monovalent hydrocarbon group having 1 to 4 carbon atoms, preferably 1 to 2 carbon atoms. The aliphatic monovalent hydrocarbon group may, for example, be an alkyl group of methyl, ethyl-13-201005057, propyl, isopropyl, butyl, isobutyl, t-butyl or t-butyl; A part or all of the hydrogen atom to which the carbon atom of the group is bonded is a group substituted with a halogen atom such as a fluorine atom, a bromine atom or a chlorine atom, for example, a chloromethyl group, a bromoethyl group, or a 3,3 group. A halogen-substituted alkyl group such as 3-trifluoropropyl or the like. Among these, a hydrogen atom and a methyl group are particularly preferred.
於上述一般式(1)中,Z爲含有有機聚矽氧烷構造 之2價有機基,而可爲直鏈狀亦可爲分枝鏈狀、亦可具有 環狀構造者。Z而言,可例舉:可以下述一般式(3): 【化3】 r2 Si— I R3In the above general formula (1), Z is a divalent organic group having an organic polyoxane structure, and may be a linear chain or a branched chain or may have a cyclic structure. For Z, it can be exemplified that the following general formula (3) can be used: [Chemical 3] r2 Si-I R3
Si-〇-f-Si-〇V R3 R5 (3) 〔式中,R2、R3、R4以及r5爲各獨立之不含脂肪族 不飽和鍵之非取代或取代之碳原子數1至8的1價羥基, 而η爲0至50之數。〕 表示之二有機聚矽氧烷構造。 於上述式(3 )中,R2、R3、R4以及R5爲各獨立之不 含脂肪族不飽和鍵之非取代或取代之碳原子數1至8、較 佳爲1至6的1價羥基。R2、R3、R4以及R5而言,可例 舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁 基、第三丁基、己基、2-乙基己基、辛基等的烷基;環戊 基、環己基等的環烷基;苯基、甲苯基、二甲苯基等的芳 基;苄基、苯乙基等的芳烷基;對此等基的碳原子所結合 -14- 201005057 之氫原子的一部分或全部係經被氟原子、溴原子、氯原子 等的鹵素原子等所取代之基,例如’氯甲基、溴乙基、 3,3,3-三氟丙基等的鹵素取代烷基等,其中,較佳爲甲基 及苯基。 於上述一般式(3)中’η爲0至50之數、較佳爲〇 至20之數。 於上述一般式(1)中,m爲1以上之數、較佳爲1 _ 至200之數、更佳爲1至50之數、再佳爲1至20之數。 於本發明之較佳實施形態中,(B )成分,係於上述 —般式(1)中,Z爲可以上述一般式(3)表示之二有機 聚矽氧烷構造之化合物。此種化合物,係例如,將可以下 述一般式(4)表示之含烯丙基之化合物與可以下述一般 式(5)表示之聚有機氫二烯矽氧烷在白金族金屬系觸媒 的存在下進行氫甲矽烷基加成反應即可製造。下述一般式 (4)所表示之含烯丙基之化合物、下述一般式(5)所表 φ 示之聚有機氫二烯矽氧烷以及白金族金屬系觸媒,各可以 單獨一種使用,亦可組合二種以上使用。又,亦可倂用下 述一般式(4)以外之具有2個鏈烯基之化合物,例如, 1,5 -己二烯、乙二醇二烯丙基醚、丁二醇二烯丙基醚、二 烯丙基苯、2,2-雙(4-烯丙氧苯基)丙烷等。 -15- 201005057Si-〇-f-Si-〇V R3 R5 (3) [wherein, R2, R3, R4 and r5 are each an unsubstituted or substituted carbon atom having from 1 to 8 which does not contain an aliphatic unsaturated bond. A valence hydroxyl group, and η is a number from 0 to 50. 〕 indicates the structure of the organic polyoxane. In the above formula (3), R2, R3, R4 and R5 are each an unsubstituted or substituted unsubstituted or substituted monovalent hydroxy group having 1 to 8 carbon atoms, preferably 1 to 6 carbon atoms, which does not contain an aliphatic unsaturated bond. R2, R3, R4 and R5 may, for example, be methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, tert-butyl, hexyl or 2-ethyl. An alkyl group such as a hexyl group or an octyl group; a cycloalkyl group such as a cyclopentyl group or a cyclohexyl group; an aryl group such as a phenyl group, a tolyl group or a xylyl group; an aralkyl group such as a benzyl group or a phenethyl group; A part or all of the hydrogen atom to which the carbon atom of the group is bonded to -14,050,057 is a group substituted with a halogen atom such as a fluorine atom, a bromine atom or a chlorine atom, for example, 'chloromethyl group, bromoethyl group, 3'. A halogen-substituted alkyl group such as 3,3-trifluoropropyl or the like is preferable, and among them, a methyl group and a phenyl group are preferred. In the above general formula (3), 'η is a number from 0 to 50, preferably from 〇 to 20. In the above general formula (1), m is a number of 1 or more, preferably 1 to 200, more preferably 1 to 50, still more preferably 1 to 20. In a preferred embodiment of the present invention, the component (B) is in the above formula (1), and Z is a compound of the diorganopolysiloxane structure represented by the above formula (3). Such a compound is, for example, an allyl group-containing compound represented by the following general formula (4) and a polyorganohydrogen dioxane gas represented by the following general formula (5) in a platinum group metal catalyst. It can be produced by carrying out a hydroformylation reaction in the presence of a hydroformyl group. The allyl group-containing compound represented by the following general formula (4), the polyorganohydrogen dioxane gas represented by the following general formula (5), and the platinum group metal catalyst may each be used alone. It is also possible to combine two or more types. Further, a compound having two alkenyl groups other than the following general formula (4), for example, 1,5-hexadiene, ethylene glycol diallyl ether, butanediol diallyl, may also be used. Ether, diallyl benzene, 2,2-bis(4-allyloxyphenyl)propane, and the like. -15- 201005057
(4) 〔式中,R1及X爲與前述相同。〕(4) [wherein R1 and X are the same as described above. 〕
【化5】【化5】
RsRs
?2 丨4?2 丨4
H-Si-0-f-Si-O R3 (5) 〔式中,R2、R3、R4、R5以及η爲與前述者同。〕 上述氫甲矽烷基化加成反應,可在溶劑的非存在下進 行、亦可在甲苯等的溶劑的存在下進行。反應溫度,通常 爲50至150 °C。於此反應中,上述一般式(4)所示之含 烯丙基之化合物的添加量,係對上述一般式(5)所示之 聚有機氫二烯矽氧烷1莫耳,較佳爲1至2莫耳。白金族 金屬系觸媒而言,可使用以往周知者,其具體例可舉:載 持有白金金屬之碳粉末、鉛黑(platinum black)、氯化 第2鉛、氯化鈾酸、氯化舶酸與一元醇的反應生成物、氯 化鉑酸與鏈烯烴類的錯合物、雙乙醯乙酸鉑等的鉑(Pt) 系觸媒;鈀(Pd)系觸媒;铑(Rh)系觸媒。鈾族金屬系 觸媒的添加量,祗要是能促進上述加成反應之有效量即可 -16- 201005057 〔(c)成分〕 ' (c)成分的硬化觸媒及/或硬化劑, 之組成物硬化所調配之成分。如作爲(B ) 述一般式(1)中之X爲氫原子時,則由於 存在環氧基之故,(C)成分而言,亦可使 φ ),惟(cl)環氧樹脂與(c2)環氧樹脂硬 很適用採用。又,如作爲(B)成分,而於_ )中之X爲縮水甘油基時,則由於(B)成 醛性羥基之故,(C)成分而言,(C3)環 很適用採用。又,亦可倂用(c2 )成分。 • ( c 1 )環氧樹脂 (cl)成分的環氧樹脂而言,較佳爲1 φ 有2個環氧基者。(cl)成分,可以單獨一 組合二種以上使用。(cl)成分的環氧樹脂 :雙(4-羥苯基)甲烷、2,2’-雙(4-羥苯基 鹵素化物的二縮水甘油基醚及此等的聚縮物 型環氧樹脂、雙酚A型環氧樹脂等):丁二 :乙烯基環己烯二氧化物;1,2-二羥基苯的 醚、間苯二酚(resorcinol)的二縮水甘油基 2,3-環氧丙氧基)苯、4,4’-雙(2,3-環氧丙 醚、1,4-雙(2,3-環氧丙氧基)環己烯等的 係爲使本發明 成分,而於上 (B )成分中不 用後述之(c3 化觸媒的組合 L述一般式(1 分中不存在酚 氧樹脂硬化劑 分子中至少具 種使用,亦可 而言,可例舉 )丙烷或者其 (所謂雙酚F 烯二環氧化物 二縮水甘油基 ;醚、1,4-雙( 氧基)二苯基 二縮水甘油基 -17- 201005057 醚;雙(3,4-環氧-6-甲基環己基甲基)己二酸酯;使多元 酚或多元醇與表氯醇(epichlorohydrin)縮合所得之聚縮 水甘油基醚;使酚醛清漆、甲酚清漆等的清漆型酚醛樹脂 或鹵素化清漆型酚醛樹脂與表氯醇縮合所得環氧清漆(亦 · 即,酚醛清漆型環氧樹脂、甲酚清漆型環氧樹脂等的清漆 型環氧樹脂);經依過氧化法所環氧化之環氧化聚烯烴或 環氧化聚丁二烯;含萘環之環氧樹脂;雙酚型環氧樹脂; ^ 酚醛芳烷基型環氧樹脂;聯二苯芳烷基型環氧樹脂;環戊 @ 二烯型環氧樹脂等。又,亦可採用聚矽氧改性環氧樹脂。 又,從能更低溫及更低壓進行所得接著劑組成物之壓黏之 觀點來看,較佳爲軟化溫度在1 00 °C以下之環氧樹脂,亦 可爲液狀的環氧樹脂。該軟化溫度,可依照例如,環球法 (ring and ball test ) ( JIS K 723 4 )測定。 (cl)成分而言,除上述1分子中至少具有2個環氧 基之環氧樹脂以外,尙可倂用一環氧化合物(mono epoxy compound )。一環氧化合物而言,可例舉:苯基環氧乙烷 @ 、環己烯氧化物、環氧丙烷、甲基縮水甘油基醚、乙基縮 水甘油基醚、苯基縮水甘油基醚、烯丙基縮水甘油醚、環 氧辛烷、環氧十二烷等。 其中,較佳爲雙酚A型環氧樹脂、甲酚清漆型環氧樹 脂或其組合。 • ( c2 )環氧樹脂硬化觸媒 (c2 )成分的環氧樹脂硬化觸媒的種類並不特別卩艮制1 -18- 201005057 ,而可使用周知者。(c2)成分’可以單獨一種使用亦可 以組合二種以上使用。(c2)成分而言’可例舉.磷系觸 媒、胺系觸媒等。 磷系觸媒而言’可例舉:三苯基膦、三苯基銹三苯基 硼酸酯、四苯基鱗四苯基硼酸酯、下述一般式所示之化合 物。 【化6】H-Si-0-f-Si-O R3 (5) wherein R2, R3, R4, R5 and η are the same as defined above. The above hydroformylation addition reaction may be carried out in the absence of a solvent or in the presence of a solvent such as toluene. The reaction temperature is usually from 50 to 150 °C. In the above reaction, the amount of the allyl group-containing compound represented by the above formula (4) is 1 mol of the polyorganohydrogen dioxane shown in the above general formula (5), preferably 1 to 2 moles. The platinum metal-based catalyst can be used as a conventional one, and specific examples thereof include carbon powder containing platinum metal, platinum black, chlorinated second lead, uranium chloride, and chlorine. a reaction product of a phosphoric acid with a monohydric alcohol, a complex of a chloroplatinic acid and an alkene, a platinum (Pt) catalyst such as platinum acetoacetate; a palladium (Pd) catalyst; ) is a catalyst. The amount of the uranium metal-based catalyst added may be an effective amount which can promote the above-mentioned addition reaction. -1605005057 [(c) component] 'c) The hardening catalyst and/or hardener of the component (c) The ingredients blended by the hardening of matter. When X in the general formula (1) is a hydrogen atom as described in (B), since the epoxy group is present, the component (C) may also be φ), but (cl) epoxy resin and C2) Epoxy resin is very suitable for use. Further, as the component (B) and X in the _) is a glycidyl group, the (C3) ring is suitably used because of the (B) aldehyde group. Further, the component (c2) can also be used. • ( c 1 ) The epoxy resin of the epoxy resin (cl) component is preferably one φ having two epoxy groups. The (cl) component may be used alone or in combination of two or more. Epoxy resin of (cl) component: bis(4-hydroxyphenyl)methane, 2,2'-bis(4-glycidyl halide diglycidyl ether) and these polycondensate epoxy resins , bisphenol A type epoxy resin, etc.): dibutyl: vinyl cyclohexene dioxide; ether of 1,2-dihydroxybenzene, diglycidyl 2,3-ring of resorcinol Oxypropoxy)benzene, 4,4'-bis(2,3-epoxypropyl ether, 1,4-bis(2,3-epoxypropoxy)cyclohexene, etc. In the above (B) component, it will not be described later (the combination of the c3 catalysts is described in the general formula (there is no use of at least one type of the phenolic oxygen resin hardener molecule in one point, and may be exemplified) Propane or its (so-called bisphenol F ene diepoxide diglycidyl; ether, 1,4-bis(oxy)diphenyl diglycidyl-17- 201005057 ether; bis (3,4-epoxy) -6-Methylcyclohexylmethyl) adipate; polyglycidyl ether obtained by condensing a polyhydric phenol or a polyhydric alcohol with epichlorohydrin; a varnish-type phenolic resin such as a novolak or a cresol varnish Or halogenated varnish An epoxy varnish obtained by condensing a phenolic resin with epichlorohydrin (also, a varnish-type epoxy resin such as a novolac type epoxy resin or a cresol varnish type epoxy resin); a ring epoxidized by an oxidation method Oxidized polyolefin or epoxidized polybutadiene; epoxy resin containing naphthalene ring; bisphenol type epoxy resin; ^ phenolic aralkyl type epoxy resin; diphenyl aralkyl type epoxy resin; A diene type epoxy resin, etc. Further, a polyfluorene-modified epoxy resin may be used. Further, from the viewpoint of pressure-bonding of the resulting adhesive composition at a lower temperature and a lower pressure, a softening temperature is preferred. The epoxy resin below 100 ° C may also be a liquid epoxy resin. The softening temperature can be measured, for example, according to the ring and ball test (JIS K 723 4 ). In addition to the epoxy resin having at least two epoxy groups in the above one molecule, a mono epoxy compound may be used. For the epoxy compound, phenyl epoxy B may be exemplified. Alkane @, cyclohexene oxide, propylene oxide, methyl glycidyl ether, ethyl shrinkage Water glyceryl ether, phenyl glycidyl ether, allyl glycidyl ether, octylene oxide, epoxy dodecane, etc. Among them, bisphenol A type epoxy resin, cresol varnish type epoxy resin is preferable. Resin or a combination thereof • ( c2 ) Epoxy resin hardening catalyst (c2 ) component of epoxy resin hardening catalyst type is not specially controlled 1 -18- 201005057, and can be used by well-known. (c2) 'These may be used alone or in combination of two or more. The component (c2) may be exemplified by a phosphorus-based catalyst or an amine-based catalyst. The phosphorus-based catalyst may, for example, be triphenylphosphine, triphenylsulfate triphenyl borate or tetraphenylphosphinium tetraphenyl borate, or a compound represented by the following general formula. 【化6】
(式中,R係互爲獨立之氫原子;氟原子、溴原子、 氯原子、碘原子等的鹵素原子;非取代或者取代之碳原子 數1至8的一元羥基;或碳原子數1至8的烷氧基,而可 爲全部同一、可爲一部分同一、亦可爲各不相同。) 上述一元烴基而言,可例舉:與就上述R2至R5所例 示者同樣的烷基、環烷基以及芳基;乙烯基、烯丙基等的 鏈烯基;乙炔基、丙炔基的炔基;對此等基的碳原子所結 合之氫原子的一部分或全部係經以氟原子、溴原子、氯原 子等之以鹵原子等所取代之基,例如氯甲基、三氟甲基、 溴乙基、3,3,3-三氟丙基的鹵素取代烷基等。 上述烷氧基而言,可例舉•甲氧基、乙氧基、丙氧基 、異丙氧基、丁氧基等的烷氧基等。 胺系觸媒而言,可例舉:2-甲基咪唑、2-乙基-4-甲基 -19- 201005057 咪唑、1-氰乙基-2-甲基咪唑、2-苯基-4,5-二羥甲基咪唑等 的咪唑衍生物等。較佳爲使用2 -苯基-4,5 -二羥甲基咪唑。 • ( c3 )環氧樹脂硬化劑 (c3 )成分的環氧樹脂硬化劑並不特別限制,而可使 用以往周知的各種。(c3)成分,可以單獨一種使用、亦 可按照硬化性能而組合二種以上使用。 (c3 )成分的環氧樹脂硬化劑而言,可例舉:二伸乙 ❹ 基三胺、三伸乙基四胺、二乙基胺基丙基胺等的脂肪族胺 ;N-胺基乙基哌哄、雙(4-胺基-3-甲基環己基)甲烷、蓋 二胺(menthan diamine ) 、3,9-雙(3 -胺基丙基)- 2,4,8,10·四氧雜螺(5,5)十一烷等的脂環式胺;間伸苯基 二胺、對伸苯基二胺、1,2-二胺苯、4,4-二胺基二苯基甲 烷、2,2-雙(4-胺苯基)丙烷、雙(4- ( 4-胺苯氧基)苯 基)颯、雙(4- (3-胺苯氧基)苯基)礪、4,4’-二胺基二 苯基丙烷、4,4’-二胺基二苯基硫化物、4,4’-二胺基二苯基 〇 碾、3,3’-二胺基二苯基颯、3,4’-二胺基二苯基醚、4,4’-二胺基二苯基醚、4,4’-雙(4-胺苯氧基)聯苯、2,6-二烷 基吡啶、雙(3-胺苯基)二乙基矽烷、4,4’-二胺基二苯基 二乙基矽烷、聯苯胺(benzidine )、3,3’-二氯聯苯胺、 3,3’-二甲氧基聯苯胺、4,4’-二胺基二苯基酮、Ν,Ν-雙(4-胺苯基)·正丁基胺、Ν,Ν-雙(4-胺苯基)甲基胺、1,5-二 胺基萘、3,3’-二甲基-4,4’-二胺基聯苯、4-胺苯基-3-胺基 苯甲酸酯、Ν,Ν-雙(4-胺苯基)苯胺、雙(對-/3-胺基第 -20- 201005057 三丁基苯基)醚、對雙-2- (2-甲基-4-胺戊基)苯、對雙 (1,1-二甲基-5-胺戊基)苯、(1,3-雙(4-胺苯氧基)苯 、間伸二甲苯基二胺、對伸二甲苯基二胺、4,4’-二胺基二 ' 苯基醚膦氧化物、4,4’-二胺基二苯基N-甲基胺、4,4’-二 胺基二苯基N-苯基胺等的芳香族胺;環氧樹脂-二伸乙基 三胺加成物、胺-環氧乙烷加成物、氰基乙基化聚胺等的 '改性脂肪族聚胺;雙酚A、三羥甲基烯丙基羥基苯酚、低 0 聚合度的酚醛清漆樹脂、環氧化或丁基化酚醛樹脂或者以 Super BeckcitelOOl (日本賴西荷爾特化學工業(股)製 )、Hitanol 4010 (日立製作所(股)製)、Scado form L. 9 (荷蘭 Scado Zwoll 社製)、Methylon 75108 (美國通 用電氣社製)等的商品名所周知之酚醛清漆等的分子中至 少含有2個酚醛性羥基之酚醛系樹脂;以Beckamine P. 138(日本賴西荷爾特化學工業(股)製)、美蘭(日立 製作所(股)製)、U-Van 10R (東洋高壓工業(股)製 • )等的商品名所周知之碳樹脂;三聚氰胺、苯胺樹脂等的 胺基樹脂;以式:HS(C2H4OCH2OC2H4SS)lC2H4OCH2OC2H4SH (式中,L=1至10的整數)所示之聚硫醚樹脂等之i分 子中至少具有2個锍基之聚硫樹脂;無水酞酸、無水六氫 酞酸、無水四氫酞酸、無水均苯四甲酸、甲基納迪克酸、 十二基無水琥珀酸、無水氯菌酸(chlorendic acid )等的 有機酸或者其無水物(酸酐):二氰二醯胺( dicyandiamide )等。此等之中,酚醛系樹脂(特別是,酚 醛清漆樹脂)、二氰二醯胺,係由於對所得組成物賦與良 -21 - 201005057 好的成型作業性之同時,對所得硬化物層賦與優異的耐濕 性、又無毒性、且較廉價之故’較佳。 〔(D)成分〕 ^ 爲降低所得接著劑硬化物層的彈性模數、吸水率以及 線膨脹係數起見,本發明組成物中’作爲任意成分而調配 (D )成分的塡充劑。(D )成分的塡充劑並不特別加以 限制,而可使用周知者。(D)成分,可以單獨一種使用 參 、亦可組合二種以上使用。 (D )成分的平均粒徑,較佳爲1 〇 " m以下(例如 0.1至10//m)、更佳爲5νιη以下(例如,0.5至5//m)(wherein R is an independent hydrogen atom; a halogen atom such as a fluorine atom, a bromine atom, a chlorine atom or an iodine atom; an unsubstituted or substituted one-membered hydroxyl group having 1 to 8 carbon atoms; or a carbon number of 1 to The alkoxy groups of 8 may be all the same, may be partially the same, or may be different.) The above monohydric hydrocarbon group may, for example, be the same alkyl group or ring as those exemplified for the above R2 to R5. An alkyl group and an aryl group; an alkenyl group such as a vinyl group or an allyl group; an alkynyl group; a propynyl group; a part or all of a hydrogen atom to which a carbon atom of the group is bonded is a fluorine atom, A group substituted with a halogen atom or the like, such as a bromine atom or a chlorine atom, for example, a halogen-substituted alkyl group such as a chloromethyl group, a trifluoromethyl group, a bromoethyl group or a 3,3,3-trifluoropropyl group. The alkoxy group may, for example, be an alkoxy group such as a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group or a butoxy group. The amine-based catalyst may, for example, be 2-methylimidazole, 2-ethyl-4-methyl-19-201005057 imidazole, 1-cyanoethyl-2-methylimidazole or 2-phenyl-4. An imidazole derivative such as 5-dimethylol imidazole or the like. Preference is given to using 2-phenyl-4,5-dimethylolimidazole. • (c3) The epoxy resin hardener of the epoxy resin hardener (c3) component is not particularly limited, and various conventionally known ones can be used. The component (c3) may be used singly or in combination of two or more kinds depending on the curing property. The epoxy resin hardener of the component (c3) may, for example, be an aliphatic amine such as diethylenetriamine, triethylamine or diethylaminopropylamine; or an N-amino group. Ethyl piperazine, bis(4-amino-3-methylcyclohexyl)methane, menthan diamine, 3,9-bis(3-aminopropyl)-2,4,8,10 An alicyclic amine such as tetraoxaspiro(5,5)undecane; an exophenylene diamine, a paraphenylene diamine, a 1,2-diamine benzene, a 4,4-diamino group Phenylmethane, 2,2-bis(4-aminophenyl)propane, bis(4-(4-aminophenoxy)phenyl)anthracene, bis(4-(3-aminophenoxy)phenyl)砺, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl ruthenium, 3,3'-diamine Diphenyl hydrazine, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 4,4'-bis(4-aminophenoxy)biphenyl, 2 , 6-dialkylpyridine, bis(3-aminophenyl)diethyldecane, 4,4'-diaminodiphenyldiethyldecane, benzidine, 3,3'-dichloro Benzidine, 3,3'-dimethoxybenzidine, 4,4'-diaminodi Ketone, anthracene, fluorene-bis(4-aminophenyl)-n-butylamine, hydrazine, hydrazine-bis(4-aminophenyl)methylamine, 1,5-diaminonaphthalene, 3,3' - dimethyl-4,4'-diaminobiphenyl, 4-aminophenyl-3-aminobenzoate, anthracene, fluorene-bis(4-aminophenyl)aniline, double (p--) 3-amino group -20- 201005057 tributylphenyl)ether, p-bis-2-(2-methyl-4-aminepentyl)benzene, p-bis(1,1-dimethyl-5-amine Pentyl)benzene, (1,3-bis(4-aminophenoxy)benzene, m-xylylenediamine, p-xylylenediamine, 4,4'-diaminobis'phenyl ether phosphine oxide An aromatic amine such as 4,4'-diaminodiphenyl N-methylamine or 4,4'-diaminodiphenyl N-phenylamine; epoxy resin-diethylidene 'Modified aliphatic polyamines such as amine adducts, amine-ethylene oxide adducts, cyanoethylated polyamines, etc.; bisphenol A, trimethylol allyl hydroxyphenol, low 0 degree of polymerization Resin varnish resin, epoxidized or butylated phenolic resin or Super BeckcitelOOl (made by Japan's Lacey Chemical Industry Co., Ltd.), Hitanol 4010 (made by Hitachi, Ltd.), Scado form L. 9 (Netherlands) Sc A phenolic phenolic resin containing at least two phenolic hydroxyl groups in a molecule such as a novolac varnish known by the trade name of meth., Ltd., Methylon 75108 (manufactured by General Electric Co., Ltd.), etc.; Beckamine P. 138 (Japan Laisy Hough) Carbon resin such as melamine, aniline resin, etc., known as the special chemical industry (share) system, Meilan (manufactured by Hitachi, Ltd.), U-Van 10R (made by Toyo Kogyo Co., Ltd.), etc. a resin; a polysulfide resin having at least two mercapto groups in a molecule such as a polythioether resin represented by the formula: HS(C2H4OCH2OC2H4SS)lC2H4OCH2OC2H4SH (wherein an integer of L = 1 to 10); anhydrous citric acid, anhydrous An organic acid such as hexahydrophthalic acid, anhydrous tetrahydrofurfuric acid, anhydrous pyromellitic acid, methyl nadic acid, dodecyl anhydrous succinic acid, anhydrous chlorendic acid or an anhydride thereof (anhydride): Didicyandiamide and the like. Among these, a phenolic resin (particularly, a novolak resin) and dicyandiamide are imparted to the obtained composition by a good molding workability of good-21 - 201005057, and the obtained hardened layer is imparted. It is preferred to be excellent in moisture resistance, non-toxic, and relatively inexpensive. [Component (D)] ^ In order to reduce the modulus of elasticity, water absorption, and coefficient of linear expansion of the obtained cured layer of the adhesive, the composition of the present invention is prepared as a component of the component (D) as an optional component. The chelating agent of the component (D) is not particularly limited, and a well-known person can be used. The component (D) may be used alone or in combination of two or more. The average particle diameter of the component (D) is preferably 1 〇 " m or less (for example, 0.1 to 10//m), more preferably 5 νηη or less (for example, 0.5 to 5//m).
。如該平均粒徑在1 〇 # m以上,則可能本發明之接著薄膜 表面的平滑性會受損害。又,(D)成分的最大粒徑較佳 爲20#m以下、更佳爲10/zm以下。在此,本說明書中 ,「平均粒徑」係指相當於由採用雷射光繞射法之粒度分 佈測定裝置所求出之累積分佈的50%之體積基準的平均粒 Q 徑之意。又,「最大粒徑」,係指當由上述中求出平均粒 徑時,於所測定之累積分佈中之粒徑的最大値之意。 (D)成分而言,可例舉:二氧化矽微粉、氧化鋁、 氧化鈦、碳黑、銀粒子等的導電性金屬粒子等的無機系塡 充劑;聚矽氧微粒等的有機系塡充劑。此等之中,較佳爲 二氧化矽微粉、聚矽氧微粒。以下,就二氧化矽微粉及聚 矽氧微粒再詳細加以說明。 -22- 201005057 •二氧化矽微粉 二氧化矽微粉並不特別加以限制,而可使用周知者。 二氧化矽微粉,可以單獨一種使用、亦可組合二種以上使 '用。二氧化矽微粉的平均粒徑及最大粒徑,係與就(D) 成分所作一般性說明者相同。二氧化矽微粉’係從所得組 成物的流動性的觀點來看,較佳爲經以有機烷氧基矽烷、 有機氯代矽烷、有機矽氮烷、低分子量矽氧烷等的有機矽 φ 化合物等經表面處理者。 二氧化矽微粉而言,可例舉:霧狀二氧化矽(fumed silica )、沈降性二氧化砂(subsidence silica)等的補強 性二氧化砂(reinforcing silica):石英等的結晶性( crystalized silica)。具體而言,可例示:日本氣羅西爾 社製的Aerosil R972、R974、R976 ;阿得瑪科技(股)社 製的 SE-2050、SC-2050、SE- 1 0 50、SO-E1、S0-C1、S0-E2 ' SO-C2、 SO-E3、 SO-C3、 SO-E5、 S0-C5 ;信越化學 . 工業社製的 Musil 120A、Musil 130A 等。 •聚矽氧微粒 聚矽氧微粒並不加以特別限制、而可使用周知者,可 例舉:聚矽氧橡膠微粒、矽樹脂微粒等。聚矽氧微粒,可 以單獨一種使用、亦可組合二種以上使用。可作爲(D) 成分而僅採用聚矽氧微粒,惟從能更有效降低所得硬化物 層的彈性模數及吸水率的觀點來看,較佳爲組合聚矽氧微 粒與上述二氧化矽微粒使用。聚矽氧微粒的平均粒徑及最 -23- 201005057 大粒徑,係與經就(D)成分所作一般性說明者相同。 聚砂氧微粒而百,較佳爲複合聚砂氧橡膠(complex silicone rubber )微粒。複合聚矽氧橡膠微粒,係於聚矽 ‘ 氧橡膠微粒表面的至少一部分存在有由該表面上的聚合反 - 應所生成之聚有機倍半矽氧烷樹脂的微小體之粒子。複合 聚矽氧橡膠微粒,可依照例如,曰本專利特開平7- 1968 1 5 號公報所記載之方法製造。亦即,於平均粒徑爲0.1至10 //m的球狀聚矽氧橡膠微粒的水分散液中,添加鹼性物質 _ 本身或者其鹼性水溶液與有機三烷氧矽烷,並於球狀聚矽 氧橡膠微粒表面上使有機三烷氧基矽烷水解並聚合,接著 ’使其乾燥而製得複合聚矽氧橡膠微粒。聚有機一倍半矽 氧烷樹脂的含量,係對球狀聚矽氧橡膠微粒100質量份,. If the average particle diameter is 1 〇 #m or more, the smoothness of the surface of the film of the present invention may be impaired. Further, the maximum particle diameter of the component (D) is preferably 20 #m or less, more preferably 10/zm or less. Here, in the present specification, "average particle diameter" means an average particle Q diameter corresponding to a volume basis of 50% of the cumulative distribution obtained by the particle size distribution measuring apparatus using the laser light diffraction method. Further, the "maximum particle diameter" means the maximum 粒径 of the particle diameter in the measured cumulative distribution when the average particle diameter is determined as described above. The component (D) may, for example, be an inorganic ruthenium agent such as cerium oxide micropowder, conductive metal particles such as alumina, titania, carbon black or silver particles; or an organic ruthenium such as polyfluorene oxide particles. Filling. Among these, cerium oxide fine powder and polyoxynized fine particles are preferred. Hereinafter, the cerium oxide fine powder and the polyoxynium oxide fine particles will be described in detail. -22- 201005057 • cerium oxide micropowder The cerium oxide micropowder is not particularly limited and can be used by a well-known person. The cerium oxide micropowder may be used singly or in combination of two or more. The average particle size and maximum particle size of the cerium oxide micropowder are the same as those generally described for the component (D). The cerium oxide fine powder ' is preferably an organic 矽 φ compound such as an organic alkoxy decane, an organic chloro decane, an organic decane, or a low molecular weight siloxane, from the viewpoint of fluidity of the obtained composition. Wait for the surface treatment. The cerium oxide fine powder may, for example, be a reinforcing silica crystal such as fumed silica or subsidence silica: crystallinity of quartz or the like (crystalized silica) ). Specifically, it can be exemplified by Aerosil R972, R974, and R976 manufactured by Japan Gasol Co., Ltd.; SE-2050, SC-2050, SE-10050, and SO-E1 manufactured by Adma Technology Co., Ltd. S0-C1, S0-E2 'SO-C2, SO-E3, SO-C3, SO-E5, S0-C5; Shin-Etsu Chemical Co., Ltd. Musil 120A, Musil 130A, etc., manufactured by Industrial Co., Ltd. • Polyoxynene fine particles The polyoxygenated fine particles are not particularly limited, and may be a known one, and examples thereof include polyoxyxylene rubber fine particles and cerium resin fine particles. The polysiloxane particles may be used singly or in combination of two or more. As the component (D), only polyfluorene oxide particles can be used, but from the viewpoint of more effectively reducing the elastic modulus and water absorption of the obtained cured layer, it is preferred to combine the polyoxynized particles with the above-mentioned ceria particles. use. The average particle size of the polysiloxane particles and the maximum particle size of -23-201005057 are the same as those generally described for the component (D). It is preferably a composite silicone rubber particle. The composite polyoxyxene rubber particles are particles of a fine body of a polyorganosilsesquioxane resin which is formed by a polymerization reaction on the surface of at least a part of the surface of the polyoxy rubber particles. The composite polyxylene rubber fine particles can be produced, for example, by the method described in Japanese Laid-Open Patent Publication No. Hei 7-1968-15. That is, in the aqueous dispersion of spherical polyoxynene rubber particles having an average particle diameter of 0.1 to 10 //m, the alkaline substance _ itself or an alkaline aqueous solution thereof and the organic trialkoxide are added, and are spherical. The organotrialkoxydecane is hydrolyzed and polymerized on the surface of the polyoxyxene rubber particles, and then 'dried to obtain composite polyoxyxene rubber particles. The content of the polyorganopose sesquioxane resin is 100 parts by mass of the spherical polyoxyxene rubber particles.
較佳爲1至5 00質量份、更佳爲2至100質量份。如該含 量在前述下限値以下,則複合聚矽氧橡膠微粒將在所得接 著劑組成物中的分散性變差,而所得接著薄膜可能組成變 成不均勻。另一方面,如該含量較前述上限値爲多時,貝丨j Q 所得硬化物層的彈性模數可能增高。 複合聚矽氧橡膠微粒而言,例如,可使用:信越化學 工業社製的 KMP-600、KMP-605、X-52-7030 等。 〔其他成分〕 再者,本發明之組成物中,除上述(A)至(C)成分 ,視需要在(D)成分以外,尙可在不妨礙本發明之目的 之範圍內調配作爲其他成分之各種添加劑。添加劑而言, -24- 201005057 可例舉··潤濕性改善劑(wettability promotor)、抗氧劑 、熱穩定劑等。 * 〔組成物之調製〕 本發明之接著劑組成物,如將上述(A)至(C)成分 、視需要將(D)成分以及其他成分,準照常法,使用攪 拌機(mixer )等加以混合則可調製。(A )至(D )成分 φ 的調配量,係如下所述。 首先,就作爲(B)成分而採用於上述一般式(1)中 之X爲氫原子之含有機聚矽氧烷構造之化合物之情形加以 說明。此時,(B )成分和(c 1 )成分的合計調配量,係 對(A)成分100質量份,較佳爲10至2 00質量份、更佳 爲20至150質量份。(cl)成分的調配量,係對(B)成 分,較佳爲5至70質量%、更佳爲1 0至5 0質量%。( c2 )成分的環氧樹脂硬化觸媒的調配量,只要是作爲觸媒的 φ 有效量即可,通常係對本發明之接著劑組成物爲0.005至 10質量%、特別是0.01至5質量%。如使用(C3 )成分時 ,則其調配量,作爲就上述一般式(1)中之X爲縮水甘 油基的情形可與後述者相同的調配量。 其次,就作爲(B)成分而採用於上述一般式(1)中 之X爲縮水甘油基之含有機聚矽氧烷構造之化合物加以說 明。此時,(B)成分和(C3)成分的合計調配量,係對 (A)成分100質量份,較佳爲10至200質量份、更佳爲 20至150質量份。(c3)成分的調配量,係對(B)成分 -25- 201005057 ,較佳爲1至80質量%、更佳爲3至60質量%、特佳爲1 至10質量%。又,如將(c2)成分的環氧樹脂硬化觸媒調 配於本實施形態的組成物時,則其量係對該組成物,較佳 ^ 爲0.005至10質量%、特佳爲0.01至5質量%。 , (D )成分的調配量,係對本發明之接著劑組成物較 佳爲5至80質量%、特佳爲1 0至60質量%。如該調配量 爲5質量%以下’則所得接著劑硬化物層的吸水率及/或 線膨脹係數可能難以減少。如調配量爲超過80質量%,則 ❹ 所得接著劑硬化物層之彈性係數可能會增加。特別是,如 作爲(D)成分而調配聚矽氧微粒時,則其調配量,係對 本發明之接著劑組成物較佳爲5至3 0質量%、更佳爲1 〇 至20質量%。如該調配量在此種範圍內,則所得接著劑硬 化物層之彈性模數、吸水率及/或線膨脹係數可能難於增 加、又、強度可能難於降低。 再者,於本發明之組成物中,存在於組成物中之全環 氧基與將與環氧基反應之全官能基(例如,羥基、羧基、 @ 巯基、胺基等)的莫耳比:(將與環氧基反應之全官能基 )/(全環氧基)的値,較佳爲〇·5至1.5、特佳爲0.8至 1.2。於本發明之組成物中,羥基,係例如,於上述一般 式(1)中之X爲氫原子時的(B)成分中,爲酚醛樹脂時 的(c3)成分等中,作爲酚醛性羥基而含有者。羧基,係 例如,官能基爲羧基時的(A)成分中而含有者。環氧基 ,係例如,官能基爲環氧基時的(A)成分中’爲上述一 般式(1)中之X爲縮水甘油基時的(B)成分、(cl)成 -26- 201005057 分中的環氧樹脂等而含有者。 〔組成物之用途〕 ‘本發明之接著劑,可採用爲例如將被著物 上之用。被著物而言,可例舉:矽晶片、LED 體)晶片等。基板而言,可例舉:BTC 丁二烯 樹脂基板。 φ 例如,將本發明之接著劑組成物以適當濃 劑中並塗佈於基板上,使其乾燥後,將被著物 有該接著劑組成物之基板表面,並使該接著劑 硬化,即可將該被著物與該基板加以接著。前 ,可例舉:甲苯、環己酮、N·甲基吡咯烷酮( 非質子性極性溶劑(aprotic polar solvent)。 常溫至200 °C下、特佳爲80至150 °C下,實施 小時、特佳爲3至10分鐘。壓黏,係以0.013 瘳 兆帕,mega pascal)、特佳爲以0.1至2 MPa 。加熱硬化,係在100至200°C下、特佳爲在 °C的溫度下實施3 0分鐘至5小時、特佳爲1至 又,亦可採用具備基材、及經設置於該基 發明之接著劑組成物所成之層(以下,簡稱接 層(tackifier composition layer )層)之接著 前述被著物接著於前述基板上。亦可例如,將 成物層從該接著劑薄膜剝離、並將其接著劑組 在被著物與基板之間加以壓黏、並使其加熱硬 接著於基板 (發光二極 )基板等的 度溶解於溶 壓黏於塗佈 組成物加熱 述溶劑而言 NMP )等的 乾燥,係在 1分鐘至1 g 10 MPa c 的壓力實施 120 至 1 80 5小時。 材上之由本 著劑組成物 薄膜,而將 該接著劑組 成物層夾介 化,以進行 -27- 201005057 該被著物與該基板之接著。壓黏及加熱硬化的條件,係與 上述者相同。 前述接著薄膜,如將本發明之接著劑組成物按與前述 者同樣方式以適當濃度溶解於溶劑中並塗佈於基材上,使 ' 其乾燥以形成接著劑組成物層即可製得。溶劑之例及乾燥 條件係與上述者相同。接著劑組成物層的膜厚並不特別加 以限制,而可按照目的選擇,惟較佳爲10至100//m、特 佳爲15至50//m。前述基材,通常係薄膜狀者,例如可 0 採用:聚乙烯薄膜、聚丙烯薄膜、聚酯薄膜、聚醯胺薄膜 、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚醚醯亞胺薄膜、 聚四氟乙烯薄膜、紙、金屬箔等的基材、或者經將表面脫 模處理之前述基材,特佳爲表面經脫模處理之前述基材。 前述基材的厚度,較佳爲5至200/zm、更佳爲10至100 ji m。 本發明之接著劑組成物,可採用爲本發明之切割•黏 晶接著薄膜。亦即,本發明之切割·黏晶接著薄膜,具備 〇 有,具有基材及經設置於其上面之黏合劑層(adhesive layer )之切割薄膜、及經設置於該切割薄膜的黏合劑層上 之由本發明之接著劑組成物所成之層。前述基材,係通常 爲薄膜狀者,例如,可採用聚乙烯、聚丙烯、聚氯化乙烯 以及此等的共聚物。前述基材的厚度,較佳爲50至200//m 、更佳爲70至150/zm。能形成前述黏合劑層之黏合劑而 言,可例舉:丙烯酸系黏合劑、橡膠系黏合劑、聚胺基甲 酸酯系黏合劑、聚矽氧系黏合劑等。前述黏合劑層的厚度 -28- 201005057 ’較佳爲1至20ym、更佳爲5至10#m。 本發明之切割•黏晶接著薄膜,係例如,於該切割薄 膜的黏合劑層上層合本發明之接著薄膜中的接著劑組成物 ‘層’即可製造。又,亦可將本發明之接著劑組成物以與前 述者同樣的適當濃度溶解於溶劑中並塗佈於該切割薄膜的 黏合劑層上,使其乾燥以形成接著劑組成物層而製得。溶 劑之例、乾燥條件以及接著劑組成物層的膜厚係與上述者 φ 相同。切割薄膜而言,例如,可採用壓敏型的切割薄膜、 紫外線硬化型的切割薄膜。 本發明之接著劑組成物,不僅於半導體裝置等的電子 零件的製造,尙於含有接著過程之各種製品之製造、例如 ,LED (發光二極體)部件、感測器(sensor )、液晶零 件等的製造上亦可採用。 【實施方式】 • 〔實施例〕 « 以下,將舉示實施例及比較例,藉以具體說明本發明 ' 內容,惟本發明並不因下述實施例而有所限制。 〔接著劑組成物之調製〕 按表1或表2所示之調配量(質量份),將下述(A )至(D)成分飼給自轉•公轉方式的攪拌機(mixer)( 新機社(股)製),再按(A)至(D)成分的合計濃度 能成爲20質量%之方式添加甲基乙基甲酮或環己酮並混合 -29- 201005057 ,以調製接著劑組成物。 (A) (甲基)丙烯酸系樹脂 (A )成分,係作爲將下述各樹脂40質量份分別溶解 ' 於環己酮60質量份中所得之樹脂溶液所調配者。在此, 表1或表2中所示之(A)成分的調配量,並非樹脂溶液 的調配量,而係經換算爲樹脂本身之調配量之値。 •丙烯酸樹脂A :SG-P3、環氧官能基量0.021莫耳 / 100g、Tg (玻璃化溫度)12°c、MW (重量平均分子量 )85萬、長瀨化學科技社製 •丙烯酸樹脂B: SG-708-6、環氧官能基量0.016莫 耳/100g、Tg4°C、Mw70萬、長瀨化學科技社製 (B) 含有機聚矽氧烷構造之化合物 •化合物A (平均構造式) 【化7】It is preferably from 1 to 500 parts by mass, more preferably from 2 to 100 parts by mass. If the content is at most the above lower limit ,, the dispersibility of the composite polyxylene oxide fine particles in the resulting adhesive composition is deteriorated, and the resulting adhesive film may become uneven in composition. On the other hand, when the content is more than the above upper limit 値, the elastic modulus of the cured layer obtained by the shellfish j Q may be increased. For the composite polyoxyxene rubber particles, for example, KMP-600, KMP-605, X-52-7030, etc. manufactured by Shin-Etsu Chemical Co., Ltd. can be used. [Other components] Further, in the composition of the present invention, in addition to the components (A) to (C), if necessary, other components (D) may be blended as other components within a range not inhibiting the object of the present invention. Various additives. The additive may be -24-201005057, a wettability improver, an antioxidant, a heat stabilizer or the like. * [Preparation of Composition] The adhesive composition of the present invention is prepared by mixing the components (A) to (C) and, if necessary, the component (D) and other components, using a mixer or the like. It can be modulated. The blending amount of the components (A) to (D) φ is as follows. First, a case where the compound of the above formula (1) in which the X of the general formula (1) is a hydrogen atom and which has a structure of a polyorganosiloxane is used will be described. In this case, the total amount of the component (B) and the component (c 1 ) is preferably 100 parts by mass to 100 parts by mass, more preferably 20 to 150 parts by mass, per 100 parts by mass of the component (A). The compounding amount of the component (cl) is a component (B), preferably 5 to 70% by mass, more preferably 10 to 50% by mass. The amount of the epoxy resin curing catalyst of the component (c2) may be an effective amount of φ as a catalyst, and is usually 0.005 to 10% by mass, particularly 0.01 to 5% by mass, to the adhesive composition of the present invention. . When the component (C3) is used, the amount of the compound may be the same as that described later as the case where X in the above general formula (1) is a glycidyl group. Next, a compound containing the organopolyoxyalkylene structure in which X in the above general formula (1) is a glycidyl group as the component (B) will be described. In this case, the total amount of the component (B) and the component (C3) is preferably 10 to 200 parts by mass, more preferably 20 to 150 parts by mass, per 100 parts by mass of the component (A). The compounding amount of the component (c3) is (B) component -25 to 201005057, preferably 1 to 80% by mass, more preferably 3 to 60% by mass, particularly preferably 1 to 10% by mass. Further, when the epoxy resin curing agent of the component (c2) is blended in the composition of the present embodiment, the amount is preferably 0.005 to 10% by mass, particularly preferably 0.01 to 5, for the composition. quality%. The compounding amount of the component (D) is preferably from 5 to 80% by mass, particularly preferably from 10 to 60% by mass, based on the adhesive composition of the present invention. If the blending amount is 5% by mass or less, the water absorption ratio and/or the coefficient of linear expansion of the obtained cured layer of the adhesive may be difficult to reduce. If the blending amount is more than 80% by mass, the elastic modulus of the resulting cured layer of the adhesive may increase. In particular, when the polyoxynene fine particles are blended as the component (D), the blending amount is preferably from 5 to 30% by mass, more preferably from 1 to 20% by mass, based on the adhesive composition of the present invention. If the amount is within this range, the elastic modulus, water absorption, and/or coefficient of linear expansion of the resulting adhesive layer may be difficult to increase, and strength may be difficult to reduce. Further, in the composition of the present invention, the molar ratio of the total epoxy group present in the composition to the total functional group (for example, a hydroxyl group, a carboxyl group, a fluorenyl group, an amine group, etc.) which will react with the epoxy group The oxime of (all-functional group reactive with an epoxy group) / (all-epoxy group) is preferably 〇5 to 1.5, particularly preferably 0.8 to 1.2. In the composition of the present invention, the hydroxyl group is, for example, the component (B) in the case where X in the above general formula (1) is a hydrogen atom, and the (c3) component in the case of a phenol resin, and the like. And contain. The carboxyl group is, for example, contained in the component (A) when the functional group is a carboxyl group. The epoxy group is, for example, a component (A) in the case where the functional group is an epoxy group, and the component (B) in the case where X in the above general formula (1) is a glycidyl group, and (cl) is -26-201005057 It is contained in the epoxy resin or the like. [Use of the composition] The adhesive of the present invention can be used, for example, as a target. The object to be observed may, for example, be a wafer or an LED wafer. The substrate may, for example, be a BTC butadiene resin substrate. φ For example, the adhesive composition of the present invention is applied onto a substrate in a suitable concentration and dried, and then the surface of the substrate on which the composition of the adhesive is applied is cured, and the adhesive is cured. The object can be attached to the substrate. In the past, for example, toluene, cyclohexanone, and N. methylpyrrolidone (aprotic polar solvent) may be exemplified at room temperature to 200 ° C, particularly preferably 80 to 150 ° C. Preferably, it is 3 to 10 minutes. The pressure is 0.013 MPa, mega pascal, and the best is 0.1 to 2 MPa. Heat-hardening, at 100 to 200 ° C, particularly preferably at a temperature of ° C for 30 minutes to 5 hours, particularly preferably 1 to again, may also be provided with a substrate, and is provided in the invention A layer formed of the adhesive composition (hereinafter, simply referred to as a "tackifier composition layer") is then attached to the substrate. For example, the product layer may be peeled off from the adhesive film, and the adhesive agent may be pressure-bonded between the substrate and the substrate, and heated to a substrate (light emitting diode) substrate. The drying in which the solvent is dissolved in the coating composition and the solvent is heated, NMP) or the like is carried out at a pressure of from 1 minute to 1 g at 10 MPa c for 120 to 185 hours. The film is composed of a film of the present composition, and the adhesive composition layer is interposed to carry out the -27-201005057. The object is attached to the substrate. The conditions of pressure bonding and heat hardening are the same as those described above. The above-mentioned adhesive film can be obtained by dissolving the adhesive composition of the present invention in a solvent at a suitable concentration in the same manner as described above and applying it to a substrate to dry it to form an adhesive composition layer. Examples of the solvent and drying conditions are the same as those described above. The film thickness of the subsequent composition layer is not particularly limited, and may be selected according to the purpose, and is preferably from 10 to 100 / / m, particularly preferably from 15 to 50 / / m. The substrate, which is usually in the form of a film, can be used, for example, as a polyethylene film, a polypropylene film, a polyester film, a polyamide film, a polyimide film, a polyimide film, or a polyether. A substrate such as an amine film, a polytetrafluoroethylene film, paper, a metal foil, or the like, or the substrate which has been subjected to mold release treatment, is particularly preferably a substrate which has been subjected to mold release treatment. The thickness of the aforementioned substrate is preferably 5 to 200 / zm, more preferably 10 to 100 ji m. The adhesive composition of the present invention can be used as the cut/adhesive film of the present invention. That is, the dicing die-bonding film of the present invention is provided with a dicing film having a substrate and an adhesive layer disposed thereon, and a pressure-sensitive adhesive layer provided on the dicing film. A layer formed from the composition of the adhesive of the present invention. The base material is usually in the form of a film. For example, polyethylene, polypropylene, polyvinyl chloride, and the like may be used. The thickness of the aforementioned substrate is preferably from 50 to 200 / / m, more preferably from 70 to 150 / zm. The adhesive which can form the above-mentioned adhesive layer may, for example, be an acrylic adhesive, a rubber adhesive, a polyurethane adhesive, or a polyoxynene adhesive. The thickness of the aforementioned adhesive layer -28 - 201005057 ' is preferably from 1 to 20 μm, more preferably from 5 to 10 #m. The dicing paste-bonding film of the present invention can be produced, for example, by laminating a layer of the adhesive composition 'layer' in the adhesive film of the present invention on the adhesive layer of the dicing film. Further, the adhesive composition of the present invention may be obtained by dissolving in an appropriate concentration in the same manner as the above, and applying it to a binder layer of the dicing film, followed by drying to form an adhesive composition layer. . The solvent, the drying conditions, and the film thickness of the adhesive composition layer are the same as those described above. For the dicing film, for example, a pressure-sensitive dicing film or an ultraviolet curing dicing film can be used. The adhesive composition of the present invention is manufactured not only in the manufacture of electronic parts such as semiconductor devices, but also in the manufacture of various products including the subsequent processes, for example, LED (Light Emitting Diode) parts, sensors, and liquid crystal parts. It can also be used in manufacturing. [Embodiment] [Embodiment] Hereinafter, the present invention will be specifically described by way of examples and comparative examples, but the present invention is not limited by the following examples. [Preparation of the composition of the adhesive agent] The following components (A) to (D) are fed to the mixer of the rotation/revolution type according to the blending amount (parts by mass) shown in Table 1 or Table 2 (New Machine Company) (manufacturing system), adding methyl ethyl ketone or cyclohexanone and mixing -29-201005057 in such a manner that the total concentration of the components (A) to (D) can be 20% by mass to prepare an adhesive composition . (A) The (meth)acrylic resin (A) component is prepared by dissolving 40 parts by mass of each of the following resins in a resin solution obtained by dissolving 60 parts by mass of cyclohexanone. Here, the blending amount of the component (A) shown in Table 1 or Table 2 is not the blending amount of the resin solution, but is converted into the amount of the resin itself. • Acrylic resin A: SG-P3, epoxy functional group amount: 0.021 mol/100 g, Tg (glass transition temperature) 12°C, MW (weight average molecular weight): 850,000, manufactured by Nagase Chemical Technology Co., Ltd. • Acrylic resin B: SG-708-6, epoxy functional group amount 0.016 mol/100g, Tg4°C, Mw700,000, manufactured by Nagase Chemical Technology Co., Ltd. (B) Compound containing organohavonane structure • Compound A (average structural formula) 【化7】
gh3 gh3 (ch2>3—a—ο-ά—(CH2>3 ch3 ch3 (式中,X爲縮水甘油基’而m = 5 ) •化合物B (平均構造式) -30- 201005057Gh3 gh3 (ch2>3-a-ο-ά-(CH2>3 ch3 ch3 (where X is glycidyl group and m = 5) • Compound B (average structural formula) -30- 201005057
【化8】【化8】
(式中,X爲縮水甘油基,以平均計,p爲7、q爲3 、η 爲 7.76 ) •化合物C (平均構造式) 【化9】 H-2C=CHCH2(wherein X is a glycidyl group, on the average, p is 7, q is 3, and η is 7.76.) • Compound C (average structural formula) [Chemical 9] H-2C=CHCH2
(式中,m爲5 ) •化合物D (平均構造式、重量平均分子量〔聚苯乙 烯換算〕=4,600 ) -31 - 201005057 【化1 ο】(wherein m is 5) • Compound D (average structural formula, weight average molecular weight [polystyrene conversion] = 4,600) -31 - 201005057 [Chemical 1 ο]
(式中,以平均計,ρ爲7.54、q爲1_〇、η爲7.4) (C)硬化觸媒及/或硬化劑 (c 1 )環氧樹脂 •環氧樹脂1 : RE-310S、流狀環氧樹脂、日本 化藥社製 •環氧樹脂2 : EOCN-1 020、日本化藥社製 •環氧樹脂3 : jER-1 002、日本環氧樹脂社製 ❹ (c2)環氧樹脂硬化觸媒 •2?1^(2-苯基-4,5-二羥基甲基咪唑):四國化 成社製 (c3 )環氧樹脂硬化劑 •二氰二醯胺:日本環氧樹脂社製 • KA-1160:酚醛清漆樹脂、大日本油墨化學社 製 • MEH-7800 :酚醛樹脂、明和化成工業社製 -32- 201005057 (D )塡充劑 .二氧化矽微粉:SE-2050、球狀二氧化矽、平均 粒徑0.5//m、阿得瑪科技社製 •複合聚矽氧橡膠微粒:X- 5 2-703 0、平均粒徑〇.7 //m、信越化學工業社製 〔接著薄膜之製作〕 其次,將各接著劑組成物塗佈於塗佈有含氟系聚矽氧 脫模劑之厚度50/zm的PET (對苯二甲酸乙二醇酯)薄膜 上,在110 °C下加熱乾燥10分鐘、以製作具備有厚度約 25/zm的接著劑組成物層之接著薄膜。 〔試驗〕 就所得之各接著薄膜,進行下述試驗。將其結果表示 於表1或表2。 楊格模數(Young’s modulus) 將經從接著薄膜剝離PET薄膜之殘留的接著劑組成物 層重疊8片’在90C下實施熱層壓(thermal lamination) 後’在175C下加熱2小時以使其硬化。裁成40mmxl0mm x200 # m的薄膜而作爲試片、採用動態黏彈性(dynamic visco elasticity)測定裝置,依張力模式,並在夾盤( c h u c k )間距離1 0 m m、測定溫度_ 8 〇 °C至3 0 0 °C、測定頻率 1 Η z (赫兹)的條件下,測定楊格模數。 -33- 201005057 (2 )吸水率 將經從接著薄膜剝離PET薄膜之殘留的接著劑組成物 層重疊8片,在90 °C下實施熱層壓後,在175 °C下熱處理 4小時以使其乾燥及硬化。裁成50mmx50mmx200//m的形 狀的試片,並浸漬於水中。168小時後,從水中取出該試 片’擦拭其表面的附著水以測定該試片的重量(W)。接 著,在120 °C下乾燥該試片4小時後,測定其重量(Wo ) 。依下式,計算吸水率。 吸水率(% ) =〔 ( W-Wo ) / W〕xl 〇〇 (3 )初期之接著性 將厚度450#m的矽晶圓,切割(dicing)爲2mmx 2mm的晶片、並於如此方式所切割之晶圓背面,按能接觸 接著劑組成物層之方式在100 °C下將接著薄膜加以熱壓黏 。接著,將接著薄膜裁切爲與晶片同樣的形狀,以取出附 有接著薄膜之矽晶片。從此矽晶片剝離PET薄膜以製得附 有接著劑組成物層之矽晶片。接著,於塗佈硬化有阻劑( resist) AUS303 (悠尼科技社(股)製)之 lOmmxlOmm 的BT基板或矽基板上,按能接觸附著有接著劑組成物層 之面之方式,載置所得之附有接著劑組成物層之矽晶片, 依170°C、0.1 MPa的條件實施熱壓黏2秒鐘以使其固定 。將如此方式固定有矽晶片之基板,在1 75 °C下加熱4小 時以使接著劑組成物層硬化以製作試片(接著試片)。採 用該接著試片,並使用黏結試驗機(b〇nd tester )( DAGE社製、4000PXY),在260 °C下測定接著劑硬化物 201005057 層與基板之間的剪切接著力(shearing tackifier strength )° (4 )高溫高濕後的接著性 將上述(2)的接著試片,在85°C/ 60%RH (相對濕 度)的條下保持168小時,接著,經過260 °C的軟熔( reflow)爐3次後,與上述(3 )同樣,在260°C下測定剪 切接著力。 (5 )埋置性能 於直徑8吋、厚度75 的矽晶圓的一側之面,按能 接觸接著劑組成物層之方式,在70 °C下實施接著薄膜之熱 壓黏。於從經熱壓黏之接著薄膜剝離PET薄膜所得附有接 著劑組成物層之晶圓的接著劑組成物層面,將壓敏切割薄 膜,按能接觸該敏壓切割薄膜的黏合劑層之方式加以貼附 。將此矽晶圓,依下述切割條件,切割爲9mm四方的矽 晶片。接著,使如此方式所得之9mm四方的矽晶片,在 背面貼附有接著劑組成物層之狀態下,從前述敏壓切割薄 膜的黏合劑層剝離。將此矽晶片,使用NEC (日本電氣) 機械社製的晶片接著機裝置(BESTEM-D02-TypeC ),於 形成有 5至15"ιη寬的條絲狀電路圖型(stripe type circuit pattern)之 50mmx50mmx厚度 250 // m 的樹脂基板 (塗佈硬化有阻劑AUS3 03之BT基板)上按能接觸接著 劑組成物層之方式加以配置,依130°C、0.1 MPa的條件 實施熱壓黏1秒鐘。如利用第1圖(表示埋置性能試驗時 之矽晶片的配置之圖)具體就這一點加以說明時,將1邊 -35- 201005057 9mm的正方形的矽晶片1,於1邊50mm的正方形的樹脂 基板2上依3mm間隔按4行4列之方式配置16片,並將 經配置於最外側之矽晶片1與樹脂基板2的外緣的間隔作 成2.5mm。將如此方式熱壓黏有矽晶片之樹脂基板,在相 當於絲焊過程中的加熱溫度之170 °C下加熱30分鐘後,從 樹脂基板上按 600 μιη的厚度使用塑模(mouid )材料 KMC2 5 00VA-T1 (信越化學工業製)加以樹脂密封(resin sealing ) ( 175 °C、密封壓力 6.9 MPa、90 秒鐘),並使 _ 該塑模材料在1 75 °c下加熱硬化4小時。使用超音波影像 測定裝置觀察接著劑硬化物層與樹脂基板之間的界面,以 檢査有無空隙的存在。 又,除將在相當於絲焊過程中的加熱溫度之170 °C下 的加熱時間從30分鐘變更爲90分鐘以外,其餘則按與上 述者同樣方式,以檢査有無空隙的存在。 如未觀察有空隙之存在時’則評價爲埋置性能足夠。 另一方面,如觀察有空隙之存在時’則評價爲埋置性能不 © 足夠。表1及表2中,「〇」表示埋置性能足夠者、「X 」表示埋置性能不足夠者。 切割條件: 切割裝置:切割器(dicer) DAD341 (替士科社 (股)製) 切割方式:切割成單片(single cut ) 切割刀片(dicing blade): Z1 : NBC-ZH 104F 27HEEE (替士科社(股)製 -36- 201005057 切割刀片旋轉數:40000rpm (6 )封裝信賴性 將在上述(5 )經樹脂密封之矽E 件合計16個在85°C/60%RH條件下 ,經過260 °C的軟熔爐3次後,使用 以觀察矽晶片與基板之間的剝離之有3 「無」表示16個封裝均未觀察有剝; 示16個封裝中至少1個以上觀察有剝 晶片切開、將所得組 保持168小時,接著 超音波影像測定裝置 疾。表1及表2中, 誰之存在、「有」表 離之存在之情況。(In the formula, ρ is 7.54, q is 1_〇, η is 7.4) (C) Hardening catalyst and/or hardener (c 1 ) Epoxy resin • Epoxy resin 1: RE-310S, Flow epoxy resin, manufactured by Nippon Kayaku Co., Ltd. • Epoxy resin 2 : EOCN-1 020, manufactured by Nippon Kayaku Co., Ltd. • Epoxy resin 3 : jER-1 002, Japan Epoxy Resin Co., Ltd. (c2) Epoxy Resin hardening catalyst • 2?1^(2-phenyl-4,5-dihydroxymethylimidazole): manufactured by Shikoku Chemicals Co., Ltd. (c3) Epoxy resin hardener • Dicyanamide: Japanese epoxy resin Co., Ltd. • KA-1160: Novolac resin, manufactured by Dainippon Ink Chemical Co., Ltd. • MEH-7800: phenolic resin, manufactured by Minghe Chemical Industry Co., Ltd. -32- 201005057 (D) 塡 剂. 二 矽 矽 :: SE-2050, Spherical cerium oxide, average particle size 0.5//m, manufactured by Adelma Technologies Co., Ltd. • Composite polyoxyn oxy rubber particles: X- 5 2-703 0, average particle size 〇.7 //m, Shin-Etsu Chemical Industry Co., Ltd. [Preparation of film] Next, each of the adhesive compositions was applied onto a PET (ethylene terephthalate) film having a thickness of 50/zm coated with a fluorine-containing polyfluorinated release agent. Heat drying at 110 °C 10 Bell, to produce thickness comprising about 25 / zm adhesive composition layer of the film followed. [Test] The following test was carried out for each of the obtained films. The results are shown in Table 1 or Table 2. Young's modulus A layer of the adhesive composition remaining from the film-peeled PET film was superposed by 8 sheets of 'thermal lamination at 90 C' and heated at 175 C for 2 hours to harden it. Cut a film of 40mmxl0mm x200 #m and use it as a test piece, using a dynamic visco elasticity measuring device, according to the tension mode, and the distance between the chucks is 10 mm, and the temperature is measured _ 8 〇 °C to The Young's modulus is measured at 3 0 0 ° C and at a measurement frequency of 1 Η z (Hz). -33- 201005057 (2) The water absorption rate is overlapped by 8 layers of the adhesive composition layer remaining from the PET film after the film is peeled off, and after heat lamination at 90 ° C, heat treatment is performed at 175 ° C for 4 hours so that It is dry and hardened. A test piece of a shape of 50 mm x 50 mm x 200 / / m was cut and immersed in water. After 168 hours, the test piece was taken out from the water to wipe the adhered water on the surface to measure the weight (W) of the test piece. Then, after drying the test piece at 120 ° C for 4 hours, the weight (Wo ) was measured. The water absorption rate is calculated according to the following formula. Water absorption rate (%) = [(W-Wo) / W]xl 3 (3) Initial adhesion The wafer of thickness 450#m was diced into a 2mm x 2mm wafer, and in this way On the back side of the cut wafer, the adhesive film was heat-pressed at 100 ° C in such a manner as to contact the adhesive composition layer. Next, the subsequent film is cut into the same shape as the wafer to take out the wafer with the subsequent film. From this, the PET film was peeled off to obtain a tantalum wafer with an adhesive composition layer. Then, it is placed on a BT substrate or a ruthenium substrate of a 10 mm x 10 mm thick film coated with a resist AUS 303 (manufactured by U-Tech Co., Ltd.) so as to be in contact with the surface on which the adhesive composition layer is adhered. The resulting tantalum wafer with the adhesive composition layer was subjected to hot press bonding for 2 seconds at 170 ° C and 0.1 MPa to be fixed. The substrate on which the tantalum wafer was fixed in this manner was heated at 1, 75 °C for 4 hours to harden the adhesive composition layer to prepare a test piece (following the test piece). Using the test piece, a bonding tester (b〇nd tester) (manufactured by DAGE, 4000 PXY) was used to measure the shearing force between the layer of the cured adhesive 201005057 and the substrate at 260 °C. ) (4) Adhesion after high temperature and high humidity The test piece of the above (2) was held under the strip of 85 ° C / 60% RH (relative humidity) for 168 hours, followed by reflow at 260 ° C. After reflowing the furnace three times, the shearing force was measured at 260 ° C in the same manner as in the above (3). (5) Embedding performance The surface of one side of the tantalum wafer having a diameter of 8 Å and a thickness of 75 was subjected to thermal compression bonding of the film at 70 ° C in such a manner as to be in contact with the composition layer of the adhesive. The pressure sensitive dicing film is applied to the adhesive layer of the pressure sensitive dicing film in the form of an adhesive composition layer of the wafer with the adhesive composition layer obtained by peeling off the PET film by the thermocompression bonding film. Attach it. This wafer was cut into a 9 mm square germanium wafer according to the following cutting conditions. Then, the 9 mm square ytterbium wafer obtained in this manner was peeled off from the adhesive layer of the pressure-sensitive dicing film in a state in which the adhesive composition layer was attached to the back surface. This wafer was subjected to a wafer bonding device (BESTEM-D02-TypeC) manufactured by NEC (Nippon Electric) Co., Ltd., and 50 mm x 50 mm x having a stripe type circuit pattern of 5 to 15 " A resin substrate having a thickness of 250 // m (a BT substrate coated with a resist AUS3 03) is placed in such a manner as to be in contact with the composition layer of the adhesive, and is subjected to hot press bonding at 130 ° C and 0.1 MPa for 1 second. bell. When the first figure (the diagram showing the arrangement of the germanium wafer in the embedding performance test) is specifically described, a square-shaped germanium wafer 1 of 1-35-201005057 9 mm is formed on a square of 50 mm on one side. On the resin substrate 2, 16 sheets were arranged in four rows and four columns at intervals of 3 mm, and the interval between the outermost wafer 1 and the outer edge of the resin substrate 2 was set to 2.5 mm. The resin substrate to which the tantalum wafer was thermally pressed in this manner was heated at 170 ° C for 30 minutes at a heating temperature in the wire bonding process, and then a mold (mouid material) KMC2 was used from the resin substrate at a thickness of 600 μm. 5 00VA-T1 (manufactured by Shin-Etsu Chemical Co., Ltd.) was subjected to resin sealing (175 ° C, sealing pressure 6.9 MPa, 90 seconds), and the molding material was heat-hardened at 1 75 ° C for 4 hours. The interface between the adhesive cured layer and the resin substrate was observed using an ultrasonic image measuring device to check for the presence or absence of voids. Further, the presence or absence of voids was examined in the same manner as described above except that the heating time at 170 ° C corresponding to the heating temperature in the wire bonding was changed from 30 minutes to 90 minutes. If the presence of voids is not observed, then it is evaluated that the embedding performance is sufficient. On the other hand, if it is observed that there is a gap, then it is evaluated that the embedding performance is not enough. In Tables 1 and 2, "〇" indicates that the embedding performance is sufficient, and "X" indicates that the embedding performance is insufficient. Cutting conditions: Cutting device: cutter (dicer) DAD341 (made by TEXAS) Cutting method: cutting into single cut (dicing blade): Z1 : NBC-ZH 104F 27HEEE (Xi Shi Co., Ltd. -36- 201005057 Cutting blade rotation number: 40,000 rpm (6) Package reliability will be in the above (5) resin-sealed 矽E total of 16 pieces at 85 °C / 60% RH After three times of reflow furnace at 260 °C, the use of 3 "none" to observe the peeling between the crucible wafer and the substrate indicates that none of the 16 packages were observed to be stripped; at least one of the 16 packages was observed to have stripped wafers. The obtained group was kept for 168 hours, and then the ultrasonic image measuring device was ill. In Tables 1 and 2, the presence and the presence of "there" were separated.
-37- 201005057 〔表1〕 實施例 比較例 1 2 3 4 5 1 2 接著薄膜 El E2 E3 E4 E5 Cl C2 ㈧ 丙烯酸樹脂A 59.5 39 35 25 59.5 39 丙烯酸樹脂B 59.5 (B) 化合物A 24.23 9.45 化合物B 24.23 19.27 23.75 化合物C 化合物D (cl) RE-310S 24.23 15.46 EOCN-1020 iER-1002 (c2) 2PHZ 0.065 0.025 0.065 (c3) 二氰二醯胺 1.27 1.27 1.25 1.27 KA-1160 6.665 MEH-7800 6.325 10.475 (D) 二氧化矽微粉 SE2050 15 15 15 40 50 15 15 複合聚矽氧橡膠微粒 X-52-7030 20 10 20 接著薄膜的特性 楊格模數(MPa) 450 260 175 670 750 780 360 吸水率(%) 0.4 0.4 0.3 0.3 0.3 0.8 0.7 接著性(MPa) 矽基板 初期 3.7 3.6 3.4 4.1 4.4 3.9 3.7 加濕後 3.5 3.5 3.2 3.8 4.1 3.3 3.2 接著性(MPa) BT基板 初期 3.6 3.4 3.4 4.2 4.2 3.9 3.6 加濕後 3.5 3.4 3.4 4.1 4.1 3.1 3.0 埋置性能 17(TC/30min 〇 〇 〇 〇 〇 X X 170〇C/90min 〇 〇 〇 〇 〇 X X 封裝信賴性 to j\w 姐 yiw Μ 無 Μ /»\Ν 有 有 201005057 〔表2〕 實施例 比較例 6 7 8 9 3 4 接著薄膜 E6 E7 E8 Ε9 C3 C4 ㈧ 丙烯酸樹脂A 59.5 42 35 59.5 35 丙烯酸樹脂B 59.5 (B) 化合物A 化合物B 化合物C 8.35 8.35 化合物D 13.3 8.65 (cl) RE-310S 6.35 9.19 EOCN-1020 8.23 8.23 10.63 9.98 jER-1002 8.23 8.23 9.98 (c2) 2PHZ 0.085 0.085 0.07 0.05 0.085 0.05 (c3) 二氰二醯胺 KA-1160 5.46 5.76 MEH-7800 (D) 二氧化矽微粉 SE2050 15 15 10 50 15 50 複合聚矽氧橡膠微粒 X-52-7030 20 接著薄膜的特性 楊格模數(MPa) 220 150 120 1200 650 2100 吸水率(%) 0.3 0.4 0.3 0.3 0.8 0.7 接著性(MPa) 矽基板 初期 4.6 3.8 3.1 5.3 4.4 5.2 加濕後 4.4 4.1 3.0 5.5 4.2 5.0 接著性(MPa) BT基板 初期 4.8 3.8 3.2 5.3 4.7 5.3 加濕後 4.7 3.9 3.0 5.1 4.5 5.0 埋置性能 170〇C/30min 〇 〇 〇 〇 X X 170〇C/90min 〇 〇 〇 〇 X X 封裝信賴性 te 姐 J \\s Μ j\\\ Μ J V \Ν 有 有 -39- 201005057 實施例1至5的組成物中,含有具有縮水甘油基之化 合物A或B。如實施例1至5與比較例1及2進行比較時 可知,實施例1至5的組成物係埋置性能優異者,由該等 組成物所製得之硬化物層,係楊格模數偏低、吸水率低、 封裝信賴性優異者。 實施例6至9的組成物中,含有具有酚醛性羥基之化 合物C或D。如實施例6至9與比較例3及4進行比較時 可知,實施例6至9的組成物係埋置性能優異者,由該等 組成物所製得之硬化物層,係楊格模數偏低、吸水率低、 封裝信賴性優異者。 〔產業上之利用可能性〕 本發明之接著劑組成物係埋置性能優異、從該接著劑 組成物所製得之接著劑硬化物層係接著力優異、且低彈性 模數及低吸水率者。因而,該接著劑組成物,係爲製造信 賴性高的半導體裝置之用的接著薄膜及作爲切割•黏晶接 @ 著薄膜中之接著劑組成物層而有用者。 【圖式簡單說明】 第1圖:表示埋置性能試驗時之矽晶片的配置之圖 【主要元件符號說明】 1 :矽晶片 2 :樹脂基板 -40--37- 201005057 [Table 1] Example Comparative Example 1 2 3 4 5 1 2 Next film El E2 E3 E4 E5 Cl C2 (8) Acrylic resin A 59.5 39 35 25 59.5 39 Acrylic resin B 59.5 (B) Compound A 24.23 9.45 Compound B 24.23 19.27 23.75 Compound C Compound D (cl) RE-310S 24.23 15.46 EOCN-1020 iER-1002 (c2) 2PHZ 0.065 0.025 0.065 (c3) Dicyanoguanamine 1.27 1.27 1.25 1.27 KA-1160 6.665 MEH-7800 6.325 10.475 (D) cerium oxide micropowder SE2050 15 15 15 40 50 15 15 composite polyoxyxene rubber particles X-52-7030 20 10 20 Next film characteristics Young's modulus (MPa) 450 260 175 670 750 780 360 Water absorption (%) 0.4 0.4 0.3 0.3 0.3 0.8 0.7 Subsequent (MPa) 初期 Initial stage of the substrate 3.7 3.6 3.4 4.1 4.4 3.9 3.7 After humidification 3.5 3.5 3.2 3.8 4.1 3.3 3.2 Subsequent (MPa) Initial BT substrate 3.6 3.4 3.4 4.2 4.2 3.9 3.6 After humidification 3.5 3.4 3.4 4.1 4.1 3.1 3.0 Buried performance 17 (TC/30min 〇〇〇〇〇 XX 170〇C/90min 〇〇〇〇〇 XX package reliability to j\w sister yiw Μ no Μ /»\Ν 有有201005057 [Table 2] Example Comparative Example 6 7 8 9 3 4 Next film E6 E7 E8 Ε9 C3 C4 (8) Acrylic resin A 59.5 42 35 59.5 35 Acrylic resin B 59.5 (B) Compound A Compound B Compound C 8.35 8.35 Compound D 13.3 8.65 (cl) RE-310S 6.35 9.19 EOCN-1020 8.23 8.23 10.63 9.98 jER-1002 8.23 8.23 9.98 (c2) 2PHZ 0.085 0.085 0.07 0.05 0.085 0.05 (c3) Cyanide amide KA-1160 5.46 5.76 MEH-7800 (D) cerium oxide micropowder SE2050 15 15 10 50 15 50 composite polyoxyn oxide particles X-52-7030 20 Next film characteristics Young's modulus (MPa) 220 150 120 1200 650 2100 Water absorption (%) 0.3 0.4 0.3 0.3 0.8 0.7 Subsequent (MPa) 初期 Initial stage of the substrate 4.6 3.8 3.1 5.3 4.4 5.2 After humidification 4.4 4.1 3.0 5.5 4.2 5.0 Subsequent (MPa) Initial BT substrate 4.8 3.8 3.2 5.3 4.7 5.3 After humidification 4.7 3.9 3.0 5.1 4.5 5.0 Buried performance 170〇C/30min 〇〇〇〇XX 170〇C/90min 〇〇〇〇XX Package reliability te Sister J \\s Μ j \\\ Μ J V \Ν 有 有 -39- 201005057 The compositions of Examples 1 to 5 contain the compound A or B having a glycidyl group. When comparing Examples 1 to 5 with Comparative Examples 1 and 2, it is understood that the compositions of Examples 1 to 5 are excellent in embedding performance, and the cured layer obtained from the compositions has a low Young's modulus. Low water absorption and excellent package reliability. The compositions of Examples 6 to 9 contained a compound C or D having a phenolic hydroxyl group. When comparing Examples 6 to 9 with Comparative Examples 3 and 4, it is understood that the compositions of Examples 6 to 9 are excellent in embedding performance, and the cured layer obtained from the compositions has a low Young's modulus. Low water absorption and excellent package reliability. [Industrial Applicability] The adhesive composition of the present invention is excellent in embedding performance, and the adhesive cured layer obtained from the adhesive composition is excellent in adhesion, low elastic modulus, and low water absorption. By. Therefore, the adhesive composition is useful for producing a bonding film for a semiconductor device having high reliability and a composition layer for an adhesive in a film. [Simple diagram of the drawing] Fig. 1 is a diagram showing the configuration of the wafer during the embedding performance test [Description of main components] 1 : 矽 wafer 2 : resin substrate -40-
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| JP2012182402A (en) * | 2011-03-03 | 2012-09-20 | Furukawa Electric Co Ltd:The | Dicing/die bonding sheet and method for processing sapphire substrate for led |
| JP2012212816A (en) * | 2011-03-31 | 2012-11-01 | Sekisui Chem Co Ltd | Dicing/die-bonding tape and production method therefor, and manufacturing method of semiconductor chip |
| CN103636068B (en) * | 2011-07-07 | 2017-09-08 | 日立化成株式会社 | Connection structure of circuit connection material and circuit board |
| JP5930625B2 (en) * | 2011-08-03 | 2016-06-08 | 日東電工株式会社 | Die bond film, dicing die bond film, and semiconductor device |
| JP2013089750A (en) * | 2011-10-18 | 2013-05-13 | Shin Etsu Chem Co Ltd | Self-adhesive film for optical semiconductor device, self-adhesive film sheet for optical semiconductor device, and optical semiconductor device manufacturing method |
| KR101730054B1 (en) | 2013-12-13 | 2017-04-25 | 주식회사 엘지화학 | Dicing film adhesion layer composition and dicing film |
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| JP4150877B2 (en) * | 2001-09-06 | 2008-09-17 | 信越化学工業株式会社 | Conductive resin composition and electronic component using the same |
| JP2003147323A (en) * | 2001-11-08 | 2003-05-21 | Hitachi Chem Co Ltd | Adhesive composition, adhesive film, semiconductor support member, semiconductor device, and method of manufacturing the same |
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